WO2023116080A1 - 一种高效异质结太阳能电池及制备方法 - Google Patents

一种高效异质结太阳能电池及制备方法 Download PDF

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WO2023116080A1
WO2023116080A1 PCT/CN2022/119006 CN2022119006W WO2023116080A1 WO 2023116080 A1 WO2023116080 A1 WO 2023116080A1 CN 2022119006 W CN2022119006 W CN 2022119006W WO 2023116080 A1 WO2023116080 A1 WO 2023116080A1
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chain
gettering
preparation
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silicon wafer
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PCT/CN2022/119006
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French (fr)
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任常瑞
张佳舟
绪欣
符黎明
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常州时创能源股份有限公司
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Publication of WO2023116080A1 publication Critical patent/WO2023116080A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of solar cells, in particular to a high-efficiency heterojunction solar cell and a preparation method.
  • heterojunction solar cells With the continuous development of the photovoltaic industry, high-efficiency N-type crystalline silicon cells are an inevitable choice for high-efficiency cell technology routes due to their natural advantages such as high minority carrier life and no light-induced attenuation. They are also a new generation of cells that are entering mass production in the photovoltaic industry. technology. Among them, heterojunction solar cells have attracted widespread attention due to their high conversion efficiency and simple process. In order to obtain higher conversion efficiency, heterojunction solar cells usually use N-type single crystal silicon wafers.
  • the process temperature of the heterojunction solar cell manufacturing process needs to be controlled at a low temperature, generally not exceeding 200°C, the whole process does not have a high-temperature diffusion process to absorb impurities on the silicon wafer. Because the metal impurities contained in silicon wafers that have not been gettered at high temperature will form deep energy level recombination centers inside the battery, especially in Czochralski single crystal silicon rods, the metal impurities in different regions are different, which leads to heterogeneity. The distribution of conversion efficiency of mass junction cells is not concentrated, the dispersion is large, and the product consistency is poor.
  • the gettering process commonly used in the industry is usually a tube-type diffusion process similar to the traditional process, that is, the cleaned silicon wafer is deposited and advanced in a high-temperature tube-type device to achieve gettering.
  • the process is cumbersome, and the silicon wafer needs to be loaded and unloaded every time a process is completed, which takes a long time, and it is necessary to add a cleaning equipment and a furnace tube equipment, and each corresponding equipment needs to increase loading and unloading and handling labor. , leading to high battery manufacturing costs.
  • One of the purposes of the present invention is to propose a method for preparing a high-efficiency heterojunction solar cell, which can improve the quality level of silicon wafers, realize a heterojunction solar cell with high conversion efficiency, and shorten the process time of the heterojunction solar cell , Simplify the process flow.
  • the second object of the present invention is to propose a full-chain gettering device.
  • the third object of the present invention is to propose a high-efficiency heterojunction solar cell prepared by the above method.
  • a method for preparing a high-efficiency heterojunction solar cell adding a gettering process before the conventional heterojunction solar cell preparation process, and the gettering process is completed through a full-chain gettering process;
  • the full-chain gettering process includes:
  • the silicon wafer is an N-type single crystal silicon wafer.
  • the gettering source is a liquid source.
  • the liquid source may be one of phosphoric acid solution, phosphorus-containing slurry or boron-containing slurry.
  • the chain pre-cleaning includes alkaline cleaning.
  • the lye is a NaOH solution with a concentration of 1-3% by mass or a KOH solution with a concentration of 1-3% by mass.
  • cleaning the silicon wafer with acid solution is also included after cleaning with alkaline solution.
  • the acid solution is an HF solution with a mass percent concentration of 1-10%.
  • the temperature of the chain-type high-temperature gettering is 500-800° C., and the time is 2-20 minutes.
  • the chain post-cleaning is cleaning with an HF solution with a concentration of 1-5% by mass.
  • the present invention also provides a full-chain gettering equipment based on the above-mentioned full-chain gettering process, including sequentially connected chain-type front-cleaning functional areas, chain-type coating and gettering source functional areas, and chain-type high-temperature gettering functional areas And the conveying device that runs through each functional area, the silicon wafers are sequentially transported to the chain pre-cleaning functional area, the chain coating gettering source functional area and the chain high-temperature gettering functional area through the conveying device to complete the full chain gettering process .
  • the full-chain gettering equipment further includes a chain post-cleaning functional area located after the chained high-temperature gettering functional area.
  • the present invention also provides a high-efficiency heterojunction solar cell prepared according to the above method.
  • the invention proposes a method for preparing high-efficiency heterojunction solar cells, which can reduce the metal impurity content of N-type single crystal silicon wafers, improve the quality level of silicon wafers, reduce the quality fluctuation of wafer sources, and make the quality of silicon wafers be controllable and stable State, improve the utilization rate of N-type monocrystalline silicon wafers on heterojunction solar cells, and improve the concentration of conversion efficiency distribution of heterojunction solar cells, and improve product consistency. Specifically, a gettering process is added before the preparation process of conventional heterojunction solar cells.
  • the gettering process is completed by a full-chain gettering process, that is, it can be completed by a full-chain equipment, which in turn includes silicon Chain-type pre-cleaning of silicon wafers, chain-type coating of gettering sources on the surface of silicon wafers, chain-type high-temperature gettering of silicon wafers and chain-type post-cleaning of silicon wafers.
  • the surface of the silicon wafer cleaned before the chain type is coated with a layer of gettering source through the chain type equipment, and the gettering source can be a phosphorus-containing liquid source or a boron-containing liquid source, and then the chain-type annealing furnace is used for high-temperature heat treatment Complete gettering.
  • the advancement of phosphorus element forms an N + doped layer on the surface of the silicon wafer, or the advancement of boron element forms a P doped layer on the surface of the silicon wafer.
  • the impurity atoms in the silicon wafer are also N + doped towards the surface.
  • layer or P-doped layer migrates and diffuses, and is fixed in the N + doped layer or P-doped layer to form a gettering layer on the surface of the silicon wafer, and finally the gettering layer on the surface of the silicon wafer passes through in the subsequent texturing step Alkali corrosion removal, and finally achieve the purpose of reducing the content of metal impurities in the silicon wafer.
  • the present invention has the following advantages:
  • the preparation method of the present invention improves the quality level of silicon wafers by reducing the metal impurity content of N-type single crystal silicon wafers, reduces the impact of wafer source quality fluctuations on cell efficiency, and reduces the difference between silicon wafers , improve the conversion efficiency of heterojunction solar cells, and realize high-efficiency heterojunction solar cells;
  • the preparation method of the present invention makes the quality of N-type monocrystalline silicon wafers tend to be consistent, and the efficiency distribution of the prepared heterojunction solar cells is more concentrated, which reduces the dispersion of efficiency distribution and greatly improves product consistency;
  • the high-efficiency heterojunction solar cell prepared by the present invention reduces the edge leakage rate of the cell and improves the cell yield
  • the full-chain gettering equipment of the present invention shortens the transfer time of silicon wafers in the manufacturing process, reduces the probability of silicon wafers being contaminated, and also improves the conversion efficiency of batteries to a certain extent, and the process is time-consuming.
  • the energy consumption is low, the production cost is low, and the degree of automation is high, which is beneficial to the promotion and use of industrialization.
  • Fig. 1 is the process flow diagram of the preparation of the heterojunction solar cell according to Example 1 of the present invention
  • Fig. 2 is a process flow diagram of the preparation of the heterojunction solar cell according to Example 3 of the present invention.
  • Fig. 3 is a box-line diagram of the conversion efficiency of the heterojunction solar cells prepared in Examples 1-3 and the comparison group of the present invention.
  • the preparation method of the high-efficiency heterojunction solar cell according to the present invention adds a gettering process before the production of the conventional heterojunction solar cell, the gettering process is a full-chain gettering process, through a One set of full chain suction equipment can complete the suction process.
  • the full-chain gettering process includes the following steps:
  • Chain-type coating of gettering sources on the surface of silicon wafers chain-type coating of phosphoric acid solution, phosphorus-containing slurry or boron-containing slurry on the surface of silicon wafers and drying;
  • a silicon wafer refers to an N-type single crystal silicon wafer.
  • the quality level between silicon wafers tends to be consistent, which is conducive to improving the concentration of efficiency distribution of heterojunction solar cells and improving the consistency of product performance.
  • the oxide layer will affect the removal speed of the gettering layer during the subsequent texturing of the silicon wafer.
  • the removal of the gettering layer of the chip is fast, and in severe cases, it will also hinder the removal effect of the gettering layer.
  • the full-chain process of the present invention also includes steps after the chain-type high-temperature gettering step is performed on the silicon wafer:
  • the texturing liquid directly contacts the gettering layer during the reaction process, and the reaction speed tends to be consistent, and the uniformity of the textured surface also tends to be consistent.
  • the quality difference between the silicon wafers is reduced to the minimum, especially after removing the gettering layer, the quality level between the silicon wafers tends to be more consistent, and the size of the textured pyramid between the silicon wafers becomes smaller after texturing. Uniformity is conducive to the realization of heterojunction solar cells with high conversion efficiency, and at the same time reduces the dispersion of cell efficiency distribution and improves product consistency.
  • the full-chain gettering process may include performing chain-type coating gettering sources and chain-type high-temperature gettering on silicon wafers, combined with tank-type pre-cleaning and tank-type post-cleaning; It includes chain-type pre-cleaning, chain-type coating gettering source and chain-type high-temperature gettering for silicon wafers, combined with tank-type post-cleaning.
  • the present invention completes the full-chain gettering equipment for the full-chain gettering process.
  • the full-chain getter equipment can include a chain-type coating gettering source functional area and a chain-type high-temperature gettering functional area; It includes chain type pre-cleaning functional area, chain type coating gettering source functional area and chain type high temperature gettering functional area; it can also include chain type pre-cleaning functional area, chain type coating gettering source functional area, chain type High-temperature gettering functional area and chain post-cleaning functional area; the equipment transports silicon wafers to each functional area through a conveyor to complete the full-chain gettering process.
  • a method for preparing a high-efficiency heterojunction solar cell specifically comprising the following steps:
  • Alkali texturing is carried out on the gettered silicon wafer, and the gettering layer on the surface of the silicon wafer is removed at the same time of texturing;
  • Metal electrodes are screen-printed on the front and back of the silicon wafer
  • Silicon wafers are sintered at low temperature to produce high-efficiency heterojunction solar cells.
  • a method for preparing a high-efficiency heterojunction solar cell specifically comprising the following steps:
  • (c) Chain-type high-temperature gettering for silicon wafers the silicon wafers coated with phosphoric acid solution on the surface are transported into the chain-type high-temperature gettering functional area by conveying rollers. At this time, the silicon wafers pass through the chain annealing furnace at 500-800°C Perform heat treatment for 2 minutes to complete the advancement of phosphorus elements, and form an N + doped layer on the surface of the silicon wafer. At the same time, the impurity atoms in the silicon wafer also migrate and diffuse toward the surface N + doped layer, and fix the N + doped layer on the surface. In the layer, the gettering is completed. At this time, the N + doped layer on the surface of the silicon wafer is a gettering layer, and an oxide layer is distributed on the N + doped layer, specifically a phosphosilicate glass layer;
  • the quality difference between the silicon wafers is reduced to the minimum, especially after the subsequent removal of the gettering layer, the quality level between the silicon wafers tends to be consistent;
  • Alkali texturing is carried out on the gettered silicon wafer, and the gettering layer on the surface of the silicon wafer is removed at the same time of texturing;
  • Metal electrodes are screen-printed on the front and back of the silicon wafer
  • Silicon wafers are sintered at low temperature to produce high-efficiency heterojunction solar cells.
  • a method for preparing a high-efficiency heterojunction solar cell specifically comprising the following steps:
  • (c) Chain-type high-temperature gettering of silicon wafers the silicon wafers coated with boron-containing slurry are transported into the chain-type high-temperature gettering functional area through the conveyor roller. At this time, the silicon wafers pass through the chain annealing furnace at 500-800 Heat treatment at °C for 20 minutes to complete the propulsion of boron and form a P-doped layer on the surface of the silicon wafer. At the same time, the impurity atoms in the silicon wafer also migrate and diffuse toward the surface P-doped layer, and are fixed on the surface P-doped layer. , the gettering is completed. At this time, the P-doped layer on the surface of the silicon wafer is a gettering layer, and an oxide layer is distributed on the P-doped layer, specifically a phosphosilicate glass layer;
  • the quality difference between the silicon wafers is reduced to the minimum, especially after the subsequent removal of the gettering layer, the quality level between the silicon wafers tends to be consistent;
  • Alkali texturing is carried out on the gettered silicon wafer, and the oxide layer and gettering layer on the surface of the silicon wafer are removed at the same time as the texturing;
  • Metal electrodes are screen-printed on the front and back of the silicon wafer
  • Silicon wafers are sintered at low temperature to produce high-efficiency heterojunction solar cells.
  • a method for preparing a heterojunction solar cell specifically comprising the following steps:
  • Metal electrodes are screen-printed on the front and back of the silicon wafer
  • Silicon wafers are sintered at low temperature to produce heterojunction solar cells.
  • the first process in the preparation process of conventional heterojunction solar cells is texturing, and the present invention adds a full-chain gettering process before the first process of conventional heterojunction solar cells.
  • the process, the full-chain gettering process and the texturing process can be well connected together, and the output and input of silicon wafers can also be completed through the transmission device.
  • the degree of automation is high, and the labor input is further reduced, which is conducive to the promotion and application of industrialization.

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Abstract

本发明公开了一种高效异质结太阳能电池及制备方法，所述制备方法是在常规异质结太阳能电池制备工序前增加一道吸杂工序，所述吸杂工序通过全链式吸杂工艺完成；所述全链式吸杂工艺包括：对硅片进行链式前清洗；在硅片表面链式涂覆吸杂源；对硅片进行链式高温吸杂。本发明的制备方法通过降低N型单晶硅片的金属杂质含量，提高了硅片的质量水平，缩小了硅片之间的差异性，提高了异质结太阳能电池的转换效率；使得N型单晶硅片的质量趋于一致，所制备的异质结太阳能电池效率分布更集中，降低了效率分布的离散性，大大提高了产品一致性。

Description

一种高效异质结太阳能电池及制备方法 技术领域
本发明涉及太阳能电池技术领域，具体涉及一种高效异质结太阳能电池及制备方法。
 背景技术
随着光伏行业的不断发展，高效率N型晶硅电池由于其高少子寿命和无光致衰减等天然优势，是高效电池技术路线的必然选择，也是光伏行业正在进入大规模生产的新一代电池技术。其中异质结太阳能电池由于其转换效率高，工序简单受到广泛关注，为了获得更高的转换效率，异质结太阳能电池通常使用N型单晶硅片。
由于异质结太阳能电池制作过程的工艺温度需控制在低温下完成，一般不超过200℃，整个工艺无高温扩散过程对硅片进行吸杂，因此，原材料硅片的质量波动对异质结电池的影响很大，因为未经高温吸杂的硅片所含的金属杂质会在电池内部形成深能级复合中心，尤其直拉单晶硅棒中，不同区域的金属杂质含量不同，进而导致异质结电池的转换效率分布不集中，离散性大，产品一致性差，因此该结构的电池对硅片的金属杂质含量要求很高，对硅片的质量要求越来越苛刻，导致整个单晶硅棒中能够用于异质结电池的N型单晶硅片的数量有所降低。
另一方面，目前行业普遍使用的吸杂工序通常为类似传统工艺中的管式扩散过程，即清洗后的硅片在高温管式设备中进行源的沉积和推进实现吸杂。采用这种方式吸杂，工艺流程繁琐，硅片每完成一个工序需要装卸片，耗时长，而且需要增加一台清洗设备和一台炉管设备，对应的每个设备需要增加上下料和搬运人工，导致电池制造成本很高。
综上，如何将吸杂工序引入到异质结太阳能电池的制备流程中便显得非常重要。
 技术解决方案
本发明的目的之一是提出一种高效异质结太阳能电池的制备方法，能够提高硅片的质量水平，实现高转换效率的异质结太阳能电池，同时能够缩短异质结太阳能电池的制程时间，简化工艺流程。
本发明的第二个目的是提出一种全链式吸杂设备。
本发明的第三个目的是提出一种通过上述方法所制备的高效异质结太阳能电池。
为达到上述目的，本发明采用的技术方案如下：
一种高效异质结太阳能电池的制备方法，在常规异质结太阳能电池制备工序前增加一道吸杂工序，所述吸杂工序通过全链式吸杂工艺完成；
所述全链式吸杂工艺包括：
对硅片进行链式前清洗；
在硅片表面链式涂覆吸杂源；
对硅片进行链式高温吸杂。
优选的，所述硅片为N型单晶硅片。
优选的，所述吸杂源为液态源。
优选的，所述液态源可以为磷酸溶液、含磷浆料或含硼浆料中的一种。
优选的，所述链式前清洗包括碱液清洗。
优选的，所述碱液为质量百分比浓度1～3%的NaOH溶液或质量百分比浓度1～3%的KOH溶液。
优选的，在碱液清洗之后还包括对所述硅片进行酸液清洗。
优选的，所述酸液为质量百分比浓度1～10%的HF溶液。
优选的，所述链式高温吸杂的温度为500～800℃，时间为2～20min。
优选的，对所述硅片进行链式高温吸杂之后还包括对所述硅片进行链式后清洗。
优选的，所述链式后清洗为质量百分比浓度1～5%的HF溶液清洗。
本发明还提供一种基于上述全链式吸杂工艺的全链式吸杂设备，包括依次连接的链式前清洗功能区、链式涂覆吸杂源功能区、链式高温吸杂功能区以及贯穿每个功能区的传送装置，硅片通过传送装置被依次输送至链式前清洗功能区、链式涂覆吸杂源功能区和链式高温吸杂功能区完成全链式吸杂工艺。
优选的，所述全链式吸杂设备还包括位于链式高温吸杂功能区之后的链式后清洗功能区。
本发明还提供了一种根据上述方法所制备的高效异质结太阳能电池。
本发明提出一种高效异质结太阳能电池的制备方法，可降低N型单晶硅片的金属杂质含量，提高硅片的质量水平，降低片源质量波动，使得硅片质量处于可控的稳定状态，提高N型单晶硅片在异质结太阳能电池上的利用率，以及提高异质结太阳能电池的转换效率分布的集中度，提高产品一致性。具体地，在常规异质结太阳能电池制备工序前增加一道吸杂工序，所述吸杂工序通过全链式吸杂工艺完成，也就是通过一台全链式设备即可完成，依次包括对硅片进行链式前清洗、在硅片表面链式涂覆吸杂源、对硅片进行链式高温吸杂和对硅片进行链式后清洗。本发明中，经过链式前清洗的硅片表面通过链式设备涂覆一层吸杂源，其吸杂源可以为含磷液态源或含硼液态源，再通过链式退火炉进行高温热处理完成吸杂。吸杂过程中，磷元素的推进在硅片表面形成N +掺杂层，或者硼元素的推进在硅片表面形成P掺杂层，此时硅片体内的杂质原子也朝向表面N +掺杂层或P掺杂层进行迁移和扩散，并固定在N +掺杂层或P掺杂层中，在硅片表面形成吸杂层，最后硅片表面的吸杂层在后续制绒步骤中通过碱液腐蚀去除，最终达到降低硅片中金属杂质含量的目的。
有益效果
有益效果：与现有技术相比，本发明具有如下优势：
（1）本发明的制备方法通过降低N型单晶硅片的金属杂质含量，提高了硅片的质量水平，降低了片源质量波动对电池效率的影响，缩小了硅片之间的差异性，提高了异质结太阳能电池的转换效率，能够实现高效异质结太阳能电池；
（2）本发明的制备方法使得N型单晶硅片的质量趋于一致，所制备的异质结太阳能电池效率分布更集中，降低了效率分布的离散性，大大提高了产品一致性；
（3）本发明所制备的高效异质结太阳能电池，降低了电池边缘漏电率，提高了电池良率；
（4）本发明的全链式吸杂设备缩短了硅片在制程中的流转时间，减少了硅片受污染的概率，在一定程度上也提高了电池的转换效率，而且工艺耗时短，能耗低，生产成本低，自动化程度高，利于产业化推广使用。
 附图说明
图1是本发明实施例1的异质结太阳能电池制备的工艺流程图；
图2是本发明实施例3的异质结太阳能电池制备的工艺流程图；
图3是本发明实施例1-3及对比组所制得的异质结太阳能电池的转换效率的箱线图。
 本发明的最佳实施方式
下面结合附图和实施例对本发明的技术方案作进一步的说明。
本发明所述的高效异质结太阳能电池的制备方法，如图1所示，在常规异质结太阳能电池制作之前增加一道吸杂工序，该吸杂工序为全链式吸杂工艺，通过一台全链式吸杂设备便可完成吸杂工序。
具体地，全链式吸杂工艺包括以下步骤：
（a）对硅片进行链式前清洗：采用质量百分比浓度1～3%的NaOH溶液或质量百分比浓度1～3%的KOH溶液对硅片进行碱液清洗，再采用质量百分比浓度1～10%的HF溶液对硅片进行酸液清洗；
（b）在硅片表面链式涂覆吸杂源：硅片表面链式涂覆磷酸溶液、含磷浆料或含硼浆料并烘干；
（c）对硅片进行链式高温吸杂：链式高温吸杂的温度为500～800℃，时间为2～20min。
在本发明中，硅片指的是N型单晶硅片。
硅片经过如上全链式工艺，硅片与硅片之间的质量水平趋于一致，有利于提高异质结太阳能电池的效率分布的集中度，提高产品性能的一致性。但是，由于链式高温吸杂后硅片表面存在氧化层，后续硅片制绒时氧化层会影响吸杂层去除的快慢，氧化层厚的硅片吸杂层去除缓慢，氧化层薄的硅片吸杂层去除快，严重情况下也会阻碍吸杂层的去除效果，吸杂层去除的快慢将导致制绒绒面中金字塔的大小会有很大差异，使得硅片与硅片之间的绒面均匀性变差，进而制成的异质结太阳能电池的转换效率波动也随之变大。因此，本发明的全链式工艺在对硅片进行链式高温吸杂步骤之后还包括步骤：
（d）对硅片进行链式后清洗：采用质量百分比浓度1～5%的HF溶液清洗硅片。
经过链式后清洗的硅片再进行制绒时，反应过程中制绒液直接同吸杂层接触，反应速度趋于一致，进而绒面均匀度也趋于一致。经过如上步骤，硅片与硅片之间的品质差别降低到最小，尤其在去除吸杂层后硅片之间的质量水平越趋于一致，制绒后硅片之间的绒面金字塔大小更加均匀，有利于实现高转换效率的异质结太阳能电池，同时降低了电池效率分布的离散性，提高了产品一致性。
作为本发明的优选替代方案，全链式吸杂工艺可以是包括对硅片分别进行链式涂覆吸杂源和链式高温吸杂，再结合槽式前清洗和槽式后清洗；也可以是包括对硅片分别进行链式前清洗、链式涂覆吸杂源和链式高温吸杂，结合槽式后清洗。
本发明完成全链式吸杂工艺的全链式吸杂设备，作为优选替代方案，全链式吸杂设备可以包括链式涂覆吸杂源功能区和链式高温吸杂功能区；也可以是包括链式前清洗功能区、链式涂覆吸杂源功能区和链式高温吸杂功能区；也可以是包括链式前清洗功能区、链式涂覆吸杂源功能区、链式高温吸杂功能区和链式后清洗功能区；该设备通过传送装置将硅片输送至各个功能区完成全链式吸杂工艺。
实施例1
一种高效异质结太阳能电池的制备方法，具体包括以下步骤：
（1）取1200片N型单晶硅片，通过全链式吸杂设备对硅片进行全链式吸杂，包括：
（a）对硅片进行链式前清洗：硅片通过传送辊传输进入链式前清洗功能区，先通过质量百分比浓度为1%的NaOH溶液清洗，水洗后再通过质量百分比浓度为5%的HF溶液清洗，水洗后烘干，用于去除硅片表面的有机物、损伤层、金属杂质和氧化层，提高硅片表面的洁净度；
（b）在硅片表面链式涂覆吸杂源：烘干后硅片通过传送辊传输进入链式涂覆吸杂源功能区，硅片表面通过涂覆装置涂覆一层含磷浆料，通过传送辊挤压使硅片表面的含磷浆料涂覆均匀并去除多余的含磷浆料，烘干；
（c）对硅片进行链式高温吸杂：表面涂覆有含磷浆料的硅片通过传送辊传输进入链式高温吸杂功能区，此时硅片经过链式退火炉于500～800℃下进行热处理2min，完成磷元素的推进，在硅片表面形成N +掺杂层，同时硅片体内的杂质原子也朝向表面N +掺杂层进行迁移和扩散，并固定在表面的N +掺杂层中，完成吸杂，此时硅片表面的N +掺杂层为吸杂层，N +掺杂层上分布有一层氧化层，具体为磷硅玻璃层；
（d）对硅片进行链式后清洗：吸杂后的硅片通过传送辊传输进入链式后清洗功能区，采用质量百分比浓度为1%的HF溶液清洗硅片，用于去除硅片表面的氧化层；
（2）对吸杂后的硅片进行碱制绒，制绒的同时去除硅片表面的吸杂层；
（3）在制绒后硅片的正背面沉积本征非晶硅层；
（4）在本征非晶硅层的正背面沉积掺杂非晶硅层；
（5）硅片正背面沉积透明导电薄膜；
（6）硅片正背面丝网印刷金属电极；
（7）硅片进行低温烧结制得高效异质结太阳能电池。
实施例2
一种高效异质结太阳能电池的制备方法，具体包括以下步骤：
（1）取1200片N型单晶硅片，通过全链式吸杂设备对硅片进行全链式吸杂，包括：
（a）对硅片进行链式前清洗：硅片通过传送辊传输进入链式前清洗功能区，先通过质量百分比浓度为1%的KOH溶液清洗，水洗后再通过质量百分比浓度为1%的HF溶液清洗，水洗后烘干，用于去除硅片表面的有机物、损伤层、金属杂质和氧化层，提高硅片表面的洁净度；
（b）在硅片表面链式涂覆吸杂源：烘干后硅片通过传送辊传输进入链式涂覆吸杂源功能区，硅片表面通过涂覆装置涂覆一层磷酸溶液，通过传送辊挤压使得硅片表面的磷酸溶液涂覆均匀并去除多余的磷酸溶液，烘干；
（c）对硅片进行链式高温吸杂：表面涂覆有磷酸溶液的硅片通过传送辊传输进入链式高温吸杂功能区，此时硅片经过链式退火炉于500～800℃下进行热处理2min，完成磷元素的推进，在硅片表面形成N +掺杂层，同时硅片体内的杂质原子也朝向表面N +掺杂层进行迁移和扩散，并固定在表面的N +掺杂层中，完成吸杂，此时硅片表面的N +掺杂层为吸杂层，N +掺杂层上分布有一层氧化层，具体为磷硅玻璃层；；
（d）对硅片进行链式后清洗：吸杂后的硅片通过传送辊传输进入链式后清洗功能区，采用质量百分比浓度为5%的HF溶液清洗硅片，去除硅片表面的氧化层；
经过如上步骤，硅片与硅片之间的品质差别降低到最小，尤其在后续去除吸杂层后硅片之间的质量水平趋于一致；
（2）对吸杂后的硅片进行碱制绒，制绒的同时去除硅片表面的吸杂层；
（3）在制绒后硅片的正背面沉积本征非晶硅层；
（4）在本征非晶硅层的正背面沉积掺杂非晶硅层；
（5）硅片正背面沉积透明导电薄膜；
（6）硅片正背面丝网印刷金属电极；
（7）硅片进行低温烧结制得高效异质结太阳能电池。
实施例3
一种高效异质结太阳能电池的制备方法，具体包括以下步骤：
（1）取1200片N型单晶硅片，通过全链式吸杂设备对硅片进行全链式吸杂，包括：
（a）对硅片进行链式前清洗：硅片通过传送辊传输进入链式前清洗功能区，先通过质量百分比浓度为3%的NaOH溶液清洗，水洗后再通过质量百分比浓度为10%的HF溶液清洗，水洗后烘干，用于去除硅片表面的有机物、损伤层、金属杂质和氧化层，提高硅片表面的洁净度；
（b）在硅片表面链式涂覆吸杂源：烘干后硅片通过传送辊传输进入链式涂覆吸杂源功能区，硅片表面通过涂覆装置涂覆一层含硼浆料，通过传送辊挤压使得硅片表面的含硼浆料涂覆均匀并去除多余的含硼浆料，烘干；
（c）对硅片进行链式高温吸杂：表面涂覆有含硼浆料的硅片通过传送辊传输进入链式高温吸杂功能区，此时硅片经过链式退火炉于500～800℃下进行热处理20min，完成硼元素的推进，在硅片表面形成P掺杂层，同时硅片体内的杂质原子也朝向表面P掺杂层进行迁移和扩散，并固定在表面的P掺杂层中，完成吸杂，此时硅片表面的P掺杂层为吸杂层，P掺杂层上分布有一层氧化层，具体为磷硅玻璃层；
经过如上步骤，硅片与硅片之间的品质差别降低到最小，尤其在后续去除吸杂层后硅片之间的质量水平趋于一致；
（2）对吸杂后的硅片进行碱制绒，制绒的同时去除硅片表面的氧化层和吸杂层；
（3）在制绒后硅片的正背面沉积本征非晶硅层；
（4）在本征非晶硅层的正背面沉积掺杂非晶硅层；
（5）硅片正背面沉积透明导电薄膜；
（6）硅片正背面丝网印刷金属电极；
（7）硅片进行低温烧结制得高效异质结太阳能电池。
对比组
一种异质结太阳能电池的制备方法，具体包括以下步骤：
（1）取1200片N型单晶硅片，对硅片进行碱制绒；
（2）在制绒后硅片的正背面沉积本征非晶硅层；
（3）在本征非晶硅层的正背面沉积掺杂非晶硅层；
（4）硅片正背面沉积透明导电薄膜；
（5）硅片正背面丝网印刷金属电极；
（6）硅片进行低温烧结制得异质结太阳能电池。
测试实施例1-3及对比组所制得的异质结太阳能电池的电性能，其平均电性能数据见表1，表中Eta为转换效率，Uoc为开路电压，Jsc为短路电流，FF为填充因子。
表1 实施例1-3及对比组的异质结太阳能电池的电性能
组别 Eta（%） Uoc（V） Jsc（mA/cm 2） FF（%）
实施例1 23.78 0.746 39.392 80.94
实施例2 23.78 0.747 39.391 80.82
实施例3 23.63 0.746 39.343 80.45
对比组 23.51 0.745 39.312 80.30
实施例1-3及对比组所制得电池的转换效率的箱线图如图2所示。
从表1可以看出，实施例1-3在常规异质结太阳能电池制作之前增加一道全链式吸杂工序，所制得的异质结太阳能电池的效率比对比组提升了0.12%-0.27%，开路电压、短路电流以及填充因子均有明显提升，说明本发明的吸杂效果明显，实现了高转换效率的异质结太阳能电池。
从图2可以看出，实施例1-3所制得的异质结太阳能电池的转换效率分布比较集中，效率离散性明显有所改善，产品一致性好，易于生产线的效率控制，明显优于对比组。
值得一提的是，在本发明中，常规异质结太阳能电池的制备工序中的首道工序为制绒，本发明在常规异质结太阳能电池的首道工序前增加一道全链式吸杂工序，全链式吸杂工序同制绒工序能够很好地衔接在一起，也可以通过传送装置完成硅片的输出和输入，自动化程度高，进一步减少了人工投入，利于产业化推广应用。

Claims (14)

  1. 一种高效异质结太阳能电池的制备方法，其特征在于：在常规异质结太阳能电池制备工序前增加一道吸杂工序，所述吸杂工序通过全链式吸杂工艺完成；
    所述全链式吸杂工艺包括：
    对硅片进行链式前清洗；
    在硅片表面链式涂覆吸杂源；
    对硅片进行链式高温吸杂。
  2. 根据权利要求1所述的制备方法，其特征在于：所述硅片为N型单晶硅片。
  3. 根据权利要求1所述的制备方法，其特征在于：所述吸杂源为液态源。
  4. 根据权利要求2所述的制备方法，其特征在于：所述液态源可以为磷酸溶液、含磷浆料或含硼浆料中的一种。
  5. 根据权利要求1所述的制备方法，其特征在于：所述链式前清洗包括碱液清洗。
  6. 根据权利要求5所述的制备方法，其特征在于：所述碱液为质量百分比浓度1～3%的NaOH溶液或质量百分比浓度1～3%的KOH溶液。
  7. 根据权利要求5所述的制备方法，其特征在于：在碱液清洗之后还包括对所述硅片进行酸液清洗。
  8. 根据权利要求7所述的制备方法，其特征在于：所述酸液为质量百分比浓度1～10%的HF溶液。
  9. 根据权利要求1所述的制备方法，其特征在于：所述链式高温吸杂的温度为500～800℃，时间为2～20min。
  10. 根据权利要求1所述的制备方法，其特征在于：对所述硅片进行链式高温吸杂之后还包括对所述硅片进行链式后清洗。
  11. 根据权利要求10所述的制备方法，其特征在于：所述链式后清洗为质量百分比浓度1～5%的HF溶液清洗。
  12. 一种基于权利要求1-11任一项所述的全链式吸杂工艺的全链式吸杂设备，其特征在于：所述全链式吸杂设备包括依次连接的链式前清洗功能区、链式涂覆吸杂源功能区、链式高温吸杂功能区以及贯穿每个功能区的传送装置，硅片通过传送装置被依次输送至链式前清洗功能区、链式涂覆吸杂源功能区和链式高温吸杂功能区完成全链式吸杂工艺。
  13. 根据权利要求12所述的全链式吸杂设备，其特征在于：所述全链式吸杂设备还包括位于链式高温吸杂功能区之后的链式后清洗功能区。
  14. 一种高效异质结太阳能电池，其特征在于，所述高效异质结太阳能电池根据权利要求1-11任一项所述的制备方法所制成。
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