WO2023109614A1 - Structure de mems et son procédé de fabrication - Google Patents

Structure de mems et son procédé de fabrication Download PDF

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Publication number
WO2023109614A1
WO2023109614A1 PCT/CN2022/137253 CN2022137253W WO2023109614A1 WO 2023109614 A1 WO2023109614 A1 WO 2023109614A1 CN 2022137253 W CN2022137253 W CN 2022137253W WO 2023109614 A1 WO2023109614 A1 WO 2023109614A1
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WIPO (PCT)
Prior art keywords
sacrificial layer
groove
forming
mems structure
manufacturing
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PCT/CN2022/137253
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English (en)
Chinese (zh)
Inventor
胡永刚
冷华星
周伍清
蔡华洁
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无锡华润上华科技有限公司
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Publication of WO2023109614A1 publication Critical patent/WO2023109614A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • the invention relates to the technical field of semiconductor devices, in particular to a MEMS structure and a method for manufacturing the MEMS structure.
  • Micro-Electro-Mechanical System (MEMS) devices are usually produced using integrated circuit manufacturing techniques. Suspension structures are common in MEMS structures. For example, in the manufacturing process of MEMS microphones, processes (such as film deposition, corrosion, etc.) are generally only performed on one side of the semiconductor substrate, while processes are not performed on the other side.
  • a thick layer of silicon oxide is formed on the diaphragm or the back plate as a sacrificial layer, with an exemplary thickness of 3-5 microns, and then on the sacrificial layer
  • the backplane or diaphragm is formed, and finally the sacrificial layer is etched away to form a cavity.
  • the etching of the sacrificial layer is mainly that the gas or liquid that corrodes the sacrificial layer passes through the etching hole to etch away the sacrificial layer under the structural layer to form a suspended structure, as shown in FIG. 1 and FIG. 2 .
  • 1 is a schematic cross-sectional view of the MEMS structure when the sacrificial layer is not completely etched
  • FIG. 2 is a schematic cross-sectional view of the MEMS structure after the sacrificial layer is etched.
  • the structural layer must be provided with relatively dense or sufficiently large corrosion holes to obtain a sufficient corrosion rate and completely corrode the sacrificial layer in the predetermined corrosion area, but dense/large-area corrosion holes are easy to have an effect on the strength or function of the structural layer.
  • a method for manufacturing a MEMS structure comprising: obtaining a substrate; forming a sacrificial layer with a plurality of hollow tunnels on the substrate; forming a structural layer on the sacrificial layer; patterning the structural layer to form a desired structure,
  • the method includes forming corrosion holes corresponding to the hollow tunnels directly above the hollow tunnels; corroding the sacrificial layer through the corrosion holes to form cavities.
  • a plurality of hollow tunnels are arranged in the sacrificial layer, so that the etchant can enter the tunnels when the sacrificial layer is corroded, thereby accelerating the corrosion rate. And because the etchant can diffuse in the entire length direction of the tunnel after entering the tunnel at any position, only a small number of corrosion holes can completely corrode the sacrificial layer in the predetermined corrosion area, avoiding the influence of dense corrosion holes on the structure layer strength.
  • the step of forming a sacrificial layer with multiple hollow tunnels on the substrate includes: forming multiple grooves on the substrate; depositing and forming a sacrificial layer on the substrate, sacrificial The layer material seals each of the grooves, and each of the grooves forms the hollow tunnel due to incomplete filling of the sacrificial layer material.
  • the air pressure in the formed hollow tunnels is lower than normal pressure.
  • the pressure of the reaction chamber of the deposition machine is lower than normal pressure during deposition.
  • the area of the bottom of the same groove is larger than the area of the opening of the groove.
  • the step of forming a plurality of grooves on the substrate includes: forming a first sacrificial layer on the substrate; patterning the first sacrificial layer, forming the plurality of grooves; the step of depositing and forming a sacrificial layer on the substrate includes depositing and forming a second sacrificial layer on the first sacrificial layer; The step of forming the sacrificial layer includes etching the first sacrificial layer and the second sacrificial layer.
  • the step of forming a plurality of grooves on the substrate includes: patterning the substrate to form a plurality of grooves.
  • the step of forming a plurality of grooves on the substrate includes: forming a groove material layer on the substrate; patterning the groove material layer, and forming a groove material layer on the groove material layer Form the plurality of grooves.
  • the step of forming corrosion holes corresponding to each hollow tunnel directly above each hollow tunnel includes: forming two corrosion holes above each groove, one located in a concave One end of the groove and the other at the other end of the groove.
  • the formed grooves include at least one shaped groove.
  • the MEMS structure manufacturing method is used to manufacture capacitive MEMS microphones.
  • a MEMS structure includes a base and a structure layer, a cavity is formed between the base and the structure layer, and a plurality of grooves are formed at the bottom of the cavity.
  • the cavity is formed by etching a sacrificial layer.
  • FIG. 1 is a schematic cross-sectional view of a MEMS structure when the sacrificial layer is not completely etched in an exemplary sacrificial layer etching process in the prior art
  • FIG. 2 is a schematic cross-sectional view of the MEMS structure after the sacrificial layer is etched in an exemplary sacrificial layer etching process in the prior art
  • Fig. 3 is the flowchart of the manufacturing method of MEMS structure in an embodiment of the present application.
  • Figure 4a is a schematic diagram of the MEMS structure after step S340 is completed in an embodiment of the present application, wherein the upper part of Figure 4a is a top view of the MEMS structure, and the lower part is a cross-sectional view of the MEMS structure, and Figure 4b is the structure shown in Figure 4a in step S350 The schematic diagram after completion;
  • Figure 5a is a schematic diagram of the MEMS structure after step S340 is completed in another embodiment of the present application, wherein the upper part of Figure 5a is a top view of the MEMS structure, and the lower part is a cross-sectional view of the MEMS structure, and Figure 5b is the structure shown in Figure 5a in step Schematic diagram of the completed S350;
  • Figure 6a is a schematic diagram of the MEMS structure after step S340 is completed in another embodiment of the present application, wherein the upper part of Figure 6a is a top view of the MEMS structure, and the lower part is a cross-sectional view of the MEMS structure, and Figure 6b is the structure shown in Figure 6a in step Schematic diagram of the completed S350;
  • Fig. 7 is a schematic structural diagram of a special-shaped groove in an embodiment of the present application.
  • Fig. 8 is a schematic diagram of setting a special-shaped groove in an embodiment of the present application so as to release a large area of sacrificial layer through a small number of corrosion holes;
  • Fig. 9 is a schematic diagram of continuous and discontinuous hollow tunnels.
  • Embodiments of the invention are described herein with reference to cross-section illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention. As such, variations from the shapes shown are to be expected due to, for example, manufacturing techniques and/or tolerances. Thus, embodiments of the invention should not be limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region. Likewise, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation was performed. Thus, the regions shown in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the invention.
  • the etching of the sacrificial layer is mainly by allowing an etchant (gas or liquid) to pass through the etching hole to etch away the sacrificial layer under the structural material to form a suspended structure. Since the corrosion gas or liquid needs to pass through the corrosion holes to corrode the sacrificial layer under the structural material, this sacrificial layer process has the following disadvantages: 1. The distance between the corrosion holes should not be too large, otherwise the corrosion time will be very long, affecting production efficiency; 2. The structural layer must have a sufficient number of corrosion holes, otherwise the sacrificial layer under the structural material cannot be corroded cleanly, but the dense corrosion holes will affect the strength or function of the material structure; 3.
  • the corrosion boundary is formed by the corrosion holes It is formed naturally after the sacrificial layer is corroded by corrosive gas or liquid, which cannot be controlled; 4. MEMS devices with different structures and uses have different requirements for the shape of the cavity, and some MEMS devices have special requirements for the shape of the cavity. However, in the exemplary sacrificial layer process, due to the arrangement of the etching holes and the etching speed, it is impossible to form a cavity with a special shape and a special boundary.
  • the manufacturing method of the MEMS structure proposed by the application has the following advantages: 1. It can shorten the corrosion time of the sacrificial layer and improve production efficiency; 2. It can reduce the number of corrosion holes, enhance the strength of the structural layer, and manufacture structures that cannot be manufactured by traditional processing techniques ;3. The corrosion boundary can break through the limitation of the corrosion hole, and form a corrosion boundary on demand.
  • Fig. 3 is the flowchart of the manufacturing method of MEMS structure in an embodiment, comprises the following steps:
  • the base includes a substrate, and the material of the substrate may be Si.
  • the material of the substrate may also be other semiconductors or semiconductor compounds, such as one of Ge, SiGe, SiC, SiO 2 or Si 3 N 4 .
  • Part of the film layer of the MEMS structure can be formed on the substrate, such as the back plate or diaphragm of the capacitive MEMS microphone.
  • the hollow tunnel is formed by the following method:
  • a plurality of grooves are formed on the substrate.
  • Grooves can be formed by patterning the substrate, for example, coating a photoresist on the substrate, developing the photoresist after exposure using a sacrificial layer groove photolithography plate to obtain an etching window, and then etching the substrate through the etching window to form groove.
  • a sacrificial layer is deposited on the substrate, and the material of the sacrificial layer seals each groove, and the groove forms a hollow tunnel due to incomplete filling of the material of the sacrificial layer.
  • the hollow tunnel can be continuous or discontinuous, see Figure 9.
  • the length of the hollow tunnel is the same or similar to the length of the corresponding groove.
  • the continuous type hollow tunnel can obtain a faster sacrificial layer corrosion rate than the discontinuous type.
  • the material of the structural layer needs to be different from that of the sacrificial layer to ensure that the structural layer is not easily corroded in the subsequent etching step of the sacrificial layer, that is, the sacrificial layer and the structural layer must have a large corrosion selection ratio during etching.
  • the substrate surface should not be easily corroded, and the sacrificial layer and the substrate surface should also have a large corrosion selectivity ratio.
  • the photoresist is coated on the structural layer, and the photoresist is developed after exposure using the corresponding photolithography plate to obtain an etching window, and then the structural layer is etched through the etching window to form Desired structure including corrosion holes.
  • step S350 other required MEMS structures may also be formed on the structure layer and/or at other positions.
  • the sacrificial layer may be etched and released after the pad is formed. After the step S350 is completed, the sacrificial layer at the predetermined position including the hollow tunnel is completely removed.
  • the distance between the boundaries of two adjacent hollow tunnels in the same groove cannot be greater than twice the lateral corrosion ability of the sacrificial layer, that is, the distance from the boundary of the corrosion hole to the corrosion Twice the lateral distance of the border.
  • the traditional sacrificial layer etching process needs to consider the spacing of the etching holes. It is best to equidistant between the etching holes. The etching time is determined by the maximum spacing between the etching holes, so as to ensure that the sacrificial layer is completely etched in the predetermined area.
  • the corrosion holes in the present application do not need to consider the distance between the corrosion holes in the extending direction of the tunnel.
  • the etchant enters the tunnel and diffuses in the entire length direction of the tunnel (ie, the tunnel extension direction), thereby accelerating the corrosion process.
  • the air pressure in the hollow tunnel formed in step S320 is lower than normal pressure, that is, lower than a standard atmospheric pressure. In this way, after the sacrificial layer above the hollow tunnel is etched away in step S350 , due to the pressure difference, the etchant will be drawn into the hollow tunnel, so that the diffusion speed of the etchant in the hollow tunnel can be accelerated, and the corrosion rate can be increased.
  • Fig. 4a is a schematic diagram of the MEMS structure after step S340 is completed in an embodiment, wherein the upper part of Fig. 4a is a top view of the MEMS structure, and the lower part is a cross-sectional view of the MEMS structure, and the cross-section does not pass through the etching hole 431;
  • a schematic diagram of the structure shown after step S350 is completed.
  • step S320 includes:
  • a first sacrificial layer 422 is deposited on the substrate 410 .
  • Coat photoresist on the first sacrificial layer 422 use the sacrificial layer groove photolithography plate to expose and develop the photoresist to obtain an etching window, and then etch the first sacrificial layer 422 through the etching window to form a concave hole. Groove 411.
  • the material of the second sacrificial layer 424 seals the groove 411 during deposition, and the groove 411 forms a hollow tunnel 421 due to incomplete filling of the material of the second sacrificial layer 424 .
  • Deposition can be easily sealed by adjusting the deposition menu parameters of the machine.
  • the deposition in step S325 adopts a deposition process lower than normal pressure, that is, the pressure of the reaction chamber (chamber) of the deposition machine is lower than normal pressure during deposition, and the hollow tunnel formed in this way The air pressure in 421 will be lower than normal pressure.
  • the cavity in the groove 411 (that is, the hollow tunnel 421) is large enough, so the groove 411 is set to a shape whose bottom area is larger than the opening area .
  • the cross section of the groove 411 is trapezoidal.
  • the groove 411 may also have other shapes, such as a rectangular groove in section. The dotted rectangle in Fig.
  • the 4a represents the position of the groove 411 (the opening profile of the groove 411), and two corrosion holes 431 penetrating the structural layer 430 are respectively formed above each groove 411, and one corrosion hole 431 is located at one end of the groove 411 , and the other is located at the other end of the groove 411 .
  • step S350 is to release both the first sacrificial layer 422 and the second sacrificial layer 424, and the etching boundary 433 is shown in FIG.
  • the material can be the same.
  • Figure 5a is a schematic diagram of the MEMS structure after step S340 in another embodiment, wherein the upper part of Figure 5a is a top view of the MEMS structure, and the lower part is a cross-sectional view of the MEMS structure, and the section does not pass through the corrosion hole 531;
  • Figure 5b is Figure 5a The structure shown is a schematic diagram after step S350 is completed.
  • the groove 511 is directly opened on the upper surface of the substrate 510 .
  • a sacrificial layer 522 is deposited on the substrate, and the material of the sacrificial layer seals the groove 511 during deposition, and the groove 511 forms a hollow tunnel 521 due to incomplete filling of the material of the sacrificial layer .
  • Deposition can be easily sealed by adjusting the deposition menu parameters of the machine.
  • step S320 deposits the sacrificial layer 522 using a deposition process below normal pressure, that is, the pressure of the reaction chamber of the deposition machine is lower than normal pressure during deposition, and the hollow tunnel formed in this way The air pressure in 521 will be lower than normal pressure.
  • the cavity in the groove 511 (that is, the hollow tunnel 521 ) is large enough, so the groove 511 is set in a shape whose bottom area is larger than the opening area.
  • the cross section of the groove 511 is trapezoidal.
  • the groove 511 may also have other shapes, such as a rectangular groove in section.
  • the dotted rectangle in Figure 5a represents the position of the groove 511 (the opening profile of the groove 511), and two corrosion holes 531 penetrating the structural layer 530 are respectively formed above each groove 511, and one corrosion hole 531 is located at one end of the groove 511 , and the other is located at the other end of the groove 511 .
  • the substrate 510 surrounding the groove 511 is etched slightly, and the etched boundary 533 is as shown in FIG. 5b.
  • Fig. 6a is a schematic diagram of the MEMS structure after step S340 is completed in another embodiment, wherein the upper part of Fig. 6a is a top view of the MEMS structure, and the lower part is a cross-sectional view of the MEMS structure, and the cross-section does not pass through the corrosion hole 631;
  • Fig. 6b is Fig. 6a
  • the structure shown is a schematic diagram after step S350 is completed.
  • step S320 includes:
  • a groove material layer 620 is deposited on the substrate 610 .
  • the material of the groove material layer 620 is different from that of the substrate 610 and the sacrificial layer 622 .
  • Coat photoresist on the groove material layer 620 use the sacrificial layer groove photolithographic plate to expose and develop the photoresist to obtain an etching window, and then etch the groove material layer 620 through the etching window to form a concave hole. Groove 611.
  • a sacrificial layer 622 is deposited on the groove material layer 620 , the material of the sacrificial layer seals the groove 611 during deposition, and the groove 611 forms a hollow tunnel 621 due to incomplete filling of the material of the sacrificial layer. Deposition can be easily sealed by adjusting the deposition menu parameters of the machine.
  • step S320 deposits the sacrificial layer 622 using a deposition process below normal pressure, that is, the pressure of the reaction chamber of the deposition machine is lower than normal pressure during deposition, and the hollow tunnel formed in this way The air pressure in 621 will be lower than normal pressure.
  • the cavity in the groove 611 (that is, the hollow tunnel 621 ) is large enough, so the groove 611 is set in a shape whose bottom area is larger than the opening area.
  • the cross section of the groove 611 is trapezoidal.
  • the groove 611 may also have other shapes, such as a rectangular groove in section.
  • the dotted rectangle in Figure 5a represents the position of the groove 611 (the opening profile of the groove 611), and two corrosion holes 631 penetrating the structural layer 630 are respectively formed above each groove 611, and one corrosion hole 631 is located at one end of the groove 611 , and the other is located at the other end of the groove 611.
  • the groove material layer 620 should not be easily corroded, so the sacrificial layer 622 and the groove material layer 620 also have a large etching selectivity ratio.
  • the corrosion boundary 633 is as shown in FIG. 6b.
  • step S320 includes at least one special-shaped groove in each of the grooves formed on the substrate. That is, the grooves can be made into different shapes as required, thereby forming special-shaped tunnels, as shown in FIG. 7 .
  • the special-shaped groove is a broken line; in other embodiments, the special-shaped groove can also be other shapes, such as curved, cross, star, ring, square, etc. is an irregular shape.
  • the groove is a square frame, and only one etching hole needs to be provided at each of the two opposite corners of the frame to obtain a square cavity.
  • the corrosion boundary of the sacrificial layer can break through the limitation of the corrosion hole, and form a corrosion boundary as needed to form a cavity with a special shape with a special boundary, so as to meet the special shape of the cavity for some MEMS devices. demand.
  • the method for manufacturing the above MEMS structure can be used to manufacture capacitive MEMS microphones, and can also be used to manufacture other MEMS structures with suspended structures.
  • the present application correspondingly provides a MEMS structure, including a base and a structure layer, a cavity is formed between the base and the structure layer, the cavity is formed by etching a sacrificial layer, and a plurality of grooves are formed at the bottom of the cavity.
  • the specific composition of the MEMS structure can refer to FIG. 5b and FIG. 6b.
  • the MEMS structure can be formed by the manufacturing method of the MEMS structure in the foregoing embodiments.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)

Abstract

La présente invention concerne une structure de MEMS et son procédé de fabrication. Le procédé de fabrication d'une structure de MEMS comprend les étapes consistant à : acquérir un substrat ; former, sur le substrat, une couche sacrificielle ayant une pluralité de tunnels creux ; former une couche structurale sur la couche sacrificielle ; former des motifs sur la couche structurale pour former une structure requise, qui implique respectivement de former, juste au-dessus des tunnels creux, des trous de corrosion correspondant aux tunnels creux ; et corroder la couche sacrificielle au moyen des trous de corrosion, de façon à former une cavité. Dans la présente invention, la pluralité de tunnels creux sont agencés dans la couche sacrificielle, de telle sorte qu'un agent corrosif peut entrer dans les tunnels pendant la corrosion de la couche sacrificielle, de façon à augmenter le taux de corrosion. De plus, étant donné que l'agent corrosif peut être diffusé dans la totalité de la direction de la longueur d'un tunnel après avoir pénétré dans le tunnel à partir de n'importe quelle position, une couche sacrificielle dans une zone de corrosion prédéfinie peut être complètement corrodée simplement au moyen de la fourniture d'un petit nombre de trous de corrosion, ce qui permet d'empêcher la résistance de la couche structurale d'être affectée par la fourniture intensive de trous de corrosion.
PCT/CN2022/137253 2021-12-15 2022-12-07 Structure de mems et son procédé de fabrication WO2023109614A1 (fr)

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CN202111536878.3 2021-12-15
CN202111536878.3A CN116264659A (zh) 2021-12-15 2021-12-15 Mems结构及其制造方法

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140332875A1 (en) * 2013-05-13 2014-11-13 Jung-Hwan Kim Vertical memory devices and method of manufacturing the same
US20160090292A1 (en) * 2014-09-26 2016-03-31 Semiconductor Manufacturing International (Shanghai) Corporation Method to improve cantilever process performance
CN105621342A (zh) * 2015-12-29 2016-06-01 苏州工业园区纳米产业技术研究院有限公司 一种mems释放辅助结构及其制备方法
CN109081302A (zh) * 2018-07-13 2018-12-25 歌尔股份有限公司 一种微通道加工方法、微通道

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140332875A1 (en) * 2013-05-13 2014-11-13 Jung-Hwan Kim Vertical memory devices and method of manufacturing the same
US20160090292A1 (en) * 2014-09-26 2016-03-31 Semiconductor Manufacturing International (Shanghai) Corporation Method to improve cantilever process performance
CN105621342A (zh) * 2015-12-29 2016-06-01 苏州工业园区纳米产业技术研究院有限公司 一种mems释放辅助结构及其制备方法
CN109081302A (zh) * 2018-07-13 2018-12-25 歌尔股份有限公司 一种微通道加工方法、微通道

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