WO2023109425A1 - Amplificateur de puissance et puce radiofréquence - Google Patents

Amplificateur de puissance et puce radiofréquence Download PDF

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Publication number
WO2023109425A1
WO2023109425A1 PCT/CN2022/132749 CN2022132749W WO2023109425A1 WO 2023109425 A1 WO2023109425 A1 WO 2023109425A1 CN 2022132749 W CN2022132749 W CN 2022132749W WO 2023109425 A1 WO2023109425 A1 WO 2023109425A1
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WO
WIPO (PCT)
Prior art keywords
bias
amplifying circuit
connection point
power amplifier
common connection
Prior art date
Application number
PCT/CN2022/132749
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English (en)
Chinese (zh)
Inventor
张莽
郭嘉帅
Original Assignee
深圳飞骧科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳飞骧科技股份有限公司 filed Critical 深圳飞骧科技股份有限公司
Publication of WO2023109425A1 publication Critical patent/WO2023109425A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only

Definitions

  • the utility model relates to the technical field of amplifier circuits, in particular to a power amplifier and a radio frequency chip.
  • a power amplifier in the related art generally includes an amplifying circuit and a bias circuit that provides a bias voltage to the amplifying circuit.
  • the amplifying circuit is generally the final stage amplifying unit, and the final stage amplifying unit generally consists of more than 30 HBT transistors (English Bipolar Junction Transistor, referred to as BJT) and more than 30 bias transistors. Set resistors to form more than 30 amplifier units.
  • An HBT transistor and a bias resistor respectively form an amplifying circuit unit, and more than 30 amplifying circuit units are symmetrically combined in parallel to form the amplifying circuit.
  • FIG. 1 is a circuit layout of a related art power amplifier.
  • A is the circuit layout of the bias circuit; B is the common connection point between the bias circuit and all amplifying circuit units; C is the connection point of an amplifying circuit unit closest to the common connection point B; D is the distance from the common connection point B The connection point of the farthest amplifying circuit unit.
  • the connection point B, the connection point C and the connection point D are all electrically connected through metal connection wires.
  • the asymmetry of the connection point between the bias circuit and the amplifying circuit unit will cause the actual bias resistance value of the amplifying circuit unit to be different.
  • the length of the metal connection line from point B to point D is about 300um
  • the length of the metal connection line from point B to point C is about 10um.
  • the thickness of the bias resistor connecting line from point B to each amplifying circuit unit is 2um
  • the width is generally about 4um
  • the resistance value of the connecting line per unit length is about 0.008 ohm/micron
  • the actual equivalent resistance is greater than 2.4 ohms, which is much greater than the equivalent resistance value from point B to point C.
  • this phenomenon is more serious due to the large number of amplifying circuit units.
  • multiple bias resistors are also connected in parallel, which greatly reduces the equivalent bias resistance of the entire final stage power amplifying circuit.
  • the entire power amplifying circuit is equivalent to The bias resistor Rs ⁇ 10 ohms. Therefore, due to the large number of amplifying circuit units and the large circuit layout area, the resulting bias resistors have large differences in value, which will aggravate the uneven current distribution in all amplifying circuit units and affect circuit reliability and amplifier performance. Due to the influence of temperature when the power amplifier is working, the bias voltage provided by the bias circuit will fluctuate to a certain extent, and it is not a fixed value. Since the equivalent bias resistance Rs is very small, the working state of the entire power amplifier circuit is greatly affected by the fluctuation of the bias voltage, and the working state is unstable, resulting in low performance of the power amplifier.
  • the utility model proposes a power amplifier and a radio frequency chip with good circuit performance.
  • the embodiment of the utility model provides a power amplifier, which includes an amplifying circuit and a bias circuit that provides a bias voltage to the amplifying circuit, and the amplifying circuit includes a plurality of mutual Amplifying circuit units arranged in parallel; the first input terminals of each of the amplifying circuit units are connected to each other and used as the input terminals of the amplifying circuit, and the second input terminals of each of the amplifying circuit units are connected to the bias set circuit, the output terminals of each of the amplifying circuit units are connected to each other and serve as the output terminals of the amplifying circuit;
  • N amplifying circuit units There are N amplifying circuit units, and N is an even number;
  • the power amplifier is provided with a common connection line on the circuit layout, and the connection point between the bias circuit and the common connection line is a common connection point;
  • the amplifying circuit units are arranged side by side on the circuit layout, the second input end is connected to the common connection line, the connection point between the second input end and the common connection line is a bias connection point, and each The bias connection point corresponds to one of the amplifying circuit units;
  • the common connection line includes a first segment and a second segment, the common connection point is arranged in the middle of the common connection line, and the first segment and the second segment are connected through the common connection point;
  • the number of the bias connection points in the first section is the same as the number of the bias connection points in the second section, and each of the bias connection points in the first section is respectively connected to the One of the bias connection points in the second segment is arranged symmetrically with respect to the common connection point.
  • N ⁇ 8 Preferably, N ⁇ 8.
  • the amplifying circuit includes multiple, the biasing circuit includes multiple, and each amplifying circuit is correspondingly connected to one of the biasing circuits.
  • N 8
  • the amplifying circuits include 4, and the bias circuits include 4.
  • the common connecting wire is a rectangular metal wire.
  • the amplifying circuit unit includes capacitors, resistors and transistors;
  • the first terminal of the capacitor is used as the first input terminal, and the first terminal of the capacitor is respectively connected to the second terminal of the resistor and the base of the transistor;
  • the second end of the resistor is used as the second input end, and the second end of the resistor is connected to the bias voltage;
  • the collector of the transistor is used as the output terminal of the amplifying circuit unit, and the collector of the transistor is connected to the power supply voltage; the emitter of the transistor is connected to the ground.
  • the transistor is a bipolar junction transistor.
  • the embodiment of the present invention further provides a radio frequency chip, the radio frequency chip is like the above-mentioned power amplifier provided by the embodiment of the present invention.
  • the power amplifier of the utility model embodiment sets the connection point of the bias circuit and the common connection line as the common connection point, and sets the connection point of the second input terminal of the amplifying circuit unit and the common connection line as the bias voltage connection point; and the public connection line is divided into the first section and the second section, the public connection point is set in the middle of the public connection line, the number of bias connection points in the first section is the same as the number of bias connection points in the second section Similarly, each bias connection point in the first section is arranged symmetrically with one of the bias connection points in the second section with the common connection point as the center.
  • Fig. 1 is the circuit layout of the power amplifier of related art
  • Fig. 2 is the circuit layout of the power amplifier of the utility model embodiment
  • Fig. 3 is the circuit structure diagram of the power amplifier of the utility model embodiment
  • Fig. 4 is a circuit structure diagram of the amplifying circuit unit of the embodiment of the present invention.
  • the utility model provides a power amplifier 100 .
  • Fig. 2 is the circuit layout of the power amplifier of the utility model embodiment
  • Fig. 3 is the circuit structure diagram of the power amplifier of the utility model embodiment
  • Fig. 4 is the utility model embodiment The circuit structure diagram of the amplification circuit unit.
  • a power amplifier 100 It includes an amplifying circuit 1 and a bias circuit 2 providing a bias voltage Vias to the amplifying circuit 1 .
  • the power amplifier 100 is a differential structure power combining power amplifier.
  • the amplifying circuit 1 includes a plurality of amplifying circuit units 3 arranged in parallel with each other.
  • each amplifying circuit unit 3 The first input terminals of each amplifying circuit unit 3 are connected to each other and serve as the input terminal PIN of the amplifying circuit 1 .
  • the second input terminal of each amplifying circuit unit 3 is connected to the bias voltage Vias.
  • the output terminals of each amplifying circuit unit 3 are connected to each other and serve as the output terminal POUT of the amplifying circuit 1 .
  • the amplifying circuit unit 3 includes a capacitor C, a resistor R and a transistor Q.
  • the transistor Q is a bipolar junction transistor (Bipolar Junction Transistor, BJT for short).
  • the capacitor C is used as the input matching capacitor of the amplifying circuit unit 3, and the capacitor C is used to realize the function of a DC blocking capacitor;
  • the resistor R is used as a bias resistor of the amplifying circuit unit 3;
  • the circuit connection relationship of the amplifying circuit unit 3 is:
  • the first terminal of the capacitor C is used as the first input terminal.
  • the first terminal of the capacitor C is respectively connected to the second terminal of the resistor R and the base of the transistor Q.
  • the second end of the resistor R is used as the second input end. And the second end of the resistor R is connected to the bias circuit 2 . That is, the second end of the resistor R receives the bias voltage Vias provided by the bias circuit 2 .
  • the collector of the transistor Q serves as the output terminal of the amplifying circuit unit 3 . And the collector of the transistor Q is connected to the power supply voltage VDD. The emitter of the transistor Q is connected to the ground GND.
  • N is an even number. Among them, N ⁇ 8.
  • N is 8. That is, the amplifying circuit 1 includes 8 amplifying circuit units 3 arranged in parallel with each other.
  • the 8 amplifying circuit units 3 are conducive to the symmetry of the circuit layout of the amplifying circuit unit 3, and are more conducive to shortening the distance connected to the bias circuit 2.
  • the length of the metal connection wire is 8.
  • Each of the eight amplifying circuit units 3 includes a resistor R. Specifically, the resistor R1, the resistor R2, the resistor R3, the resistor R4, the resistor R5, the resistor R6, the resistor R7 and the resistor R8 are arranged in sequence. The resistors R1 , R2 , R3 , R4 , R5 , R6 , R7 and R8 are all used as bias resistors in the amplifying circuit unit 3 . Eight parallel amplifying circuit units 3 and one bias circuit 2 can form a power amplifier 100 .
  • the amplifying circuit 1 includes multiple.
  • the bias circuit 2 includes a plurality of.
  • the amplifier circuit 1 includes multiple.
  • the bias circuit 2 includes a plurality of.
  • Each amplifying circuit 1 is correspondingly connected to one biasing circuit 2 .
  • the amplifying circuit 1 includes four.
  • the bias circuit 2 includes four. That is, there are 32 amplifier circuit units 3 .
  • the power amplifier 100 is provided with a common connection line L on the circuit layout.
  • the common connection line L is a rectangular metal line.
  • connection point between the bias circuit 2 and the common connection line L is the common connection point E.
  • the amplifying circuit units 3 are arranged side by side on the circuit layout.
  • the second input terminal is connected to the common connection line L.
  • the connection point between the second input end and the common connection line L is a bias voltage connection point.
  • Each bias connection point corresponds to one amplifying circuit unit 3 .
  • the second input end is one end of the connection between the resistor R and the common connection line L.
  • the bias connection points are arranged in order of connection point T1, connection point T2, connection point T3, connection point T4, connection point T5, connection point T6, connection point T7 and connection point T8, wherein the resistor R1
  • the bias connection point connected to the common connection line L is correspondingly the connection point T1; the bias connection point connected to the common connection line L by the resistor R2 is correspondingly the connection point T2; the resistor R3 is connected to the common connection line L
  • the bias connection point of the resistor R4 is connected to the connection point T3; the bias connection point of the resistor R4 connected to the common connection line L is corresponding to the connection point T4; the bias connection point of the resistor R5 connected to the common connection line L is corresponding to the connection point Point T5; the bias connection point where the resistor R6 is connected to the common connection line L is correspondingly the connection point T6; the bias connection point where the resistor R7 is connected to the common connection line L is correspondingly the connection point T7; the resistance R8 is connected to the The
  • the common connection line L includes a first segment L1 and a second segment L2.
  • the common connection point E is disposed in the middle of the common connection line L. And the first section L1 and the second section L2 are connected through the common connection point E.
  • the number of the bias connection points in the first section L1 is the same as the number of the bias connection points in the second section L2.
  • connection point T1, the connection point T2, the connection point T3, and the connection point T4 are located in the first segment L1.
  • the connection point T5, the connection point T6, the connection point T7 and the connection point T8 are located in the second section L2.
  • Each of the bias connection points located in the first section L1 is respectively arranged symmetrically with one of the bias connection points located in the second section L2 with the common connection point E as the center.
  • This setting makes the length of each bias connection point in the common connection line L close, and will not cause a large difference in the bias resistance in the amplifying circuit unit 3, thereby solving the problem of circuit reliability caused by the asymmetry of the bias connection point. Sexuality issues and amplifier performance degradation issues.
  • the total resistance R of all amplifying circuit units 3 is 300 ohms, and the number of amplifying circuit units 3 is 8.
  • the amplifying circuit composed of these 8 amplifying circuit units 3 is viewed from the common connection point E as a base point. 1.
  • the equivalent bias resistance Rs of the amplifying circuit 1 is about 37.5 ohms.
  • the equivalent bias resistance Rs of the amplifying circuit 1 is much larger than the equivalent bias resistance Rs of about 10 ohms in the background art. Therefore, the equivalent bias resistance Rs of the amplifying circuit 1 is larger, and the circuit working state of the power amplifier 100 is more stable than that of the power amplifier in the background art, thereby improving the reliability of the power amplifier 100 and optimizing the performance of the amplifier.
  • the embodiment of the utility model also provides a radio frequency chip.
  • the radio frequency chip includes the power amplifier 100 .
  • the power amplifier of the utility model embodiment sets the connection point of the bias circuit and the common connection line as the common connection point, and sets the connection point of the second input terminal of the amplifying circuit unit and the common connection line as the bias voltage connection point; and the public connection line is divided into the first section and the second section, the public connection point is set in the middle of the public connection line, the number of bias connection points in the first section is the same as the number of bias connection points in the second section Similarly, each bias connection point in the first section is arranged symmetrically with one of the bias connection points in the second section with the common connection point as the center.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

Des modes de réalisation de la présente demande concernent un amplificateur de puissance. L'amplificateur de puissance comprend un circuit d'amplification et un circuit de polarisation, le circuit d'amplification comprenant des unités de circuit d'amplification ; l'amplificateur de puissance est pourvu d'une ligne de connexion commune dans une configuration de circuit, et un point de connexion entre le circuit de polarisation et la ligne de connexion commune est un point de connexion commune ; les unités de circuit d'amplification sont disposées côte à côte dans la configuration de circuit, et un point de connexion entre une deuxième extrémité d'entrée de chaque unité de circuit d'amplification et la ligne de connexion commune est un point de connexion de tension de polarisation ; la ligne de connexion commune comprend une première section et une deuxième section, et le point de connexion commune est disposé au milieu de la ligne de connexion commune ; et le nombre de points de connexion de tension de polarisation dans la première section est le même que celui des points de connexion de tension de polarisation dans la deuxième section, et chaque point de connexion de tension de polarisation dans la première section et un point de connexion de tension de polarisation dans la deuxième section sont agencés symétriquement en utilisant le point de connexion commune comme centre. Les modes de réalisation de la présente demande concernent en outre une puce radiofréquence appliquant l'amplificateur de puissance. En utilisant la solution technique de la présente demande, les performances de fonctionnement du circuit sont bonnes.
PCT/CN2022/132749 2021-12-17 2022-11-18 Amplificateur de puissance et puce radiofréquence WO2023109425A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202123198299.0U CN216649629U (zh) 2021-12-17 2021-12-17 功率放大器和射频芯片
CN202123198299.0 2021-12-17

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Publication Number Publication Date
WO2023109425A1 true WO2023109425A1 (fr) 2023-06-22

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN216649629U (zh) * 2021-12-17 2022-05-31 深圳飞骧科技股份有限公司 功率放大器和射频芯片

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150333706A1 (en) * 2014-05-15 2015-11-19 Freescale Semiconductor, Inc. Radio frequency power amplifier circuit
CN108696255A (zh) * 2017-03-29 2018-10-23 三星电机株式会社 功率放大器
CN209345109U (zh) * 2018-12-19 2019-09-03 北京航空航天大学青岛研究院 基于全局噪声抵消方法的低噪声放大器
CN216649629U (zh) * 2021-12-17 2022-05-31 深圳飞骧科技股份有限公司 功率放大器和射频芯片

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150333706A1 (en) * 2014-05-15 2015-11-19 Freescale Semiconductor, Inc. Radio frequency power amplifier circuit
CN108696255A (zh) * 2017-03-29 2018-10-23 三星电机株式会社 功率放大器
CN209345109U (zh) * 2018-12-19 2019-09-03 北京航空航天大学青岛研究院 基于全局噪声抵消方法的低噪声放大器
CN216649629U (zh) * 2021-12-17 2022-05-31 深圳飞骧科技股份有限公司 功率放大器和射频芯片

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