WO2023108487A1

WO2023108487A1 - Temperature-measurable vertical light-emitting diode grain structure and temperature measurement correction method therefor

Info

Publication number: WO2023108487A1
Application number: PCT/CN2021/138363
Authority: WO
Inventors: 陈復邦; 赵永祥; 黄国欣
Original assignee: 联嘉光电股份有限公司
Priority date: 2021-12-15
Filing date: 2021-12-15
Publication date: 2023-06-22

Abstract

The present invention relates to a temperature-measurable vertical light-emitting diode grain structure and a temperature measurement correction method therefor. In order to provide a semiconductor epitaxial structure and a metal film resistance temperature measurement structure on the upper plane of a transverse high heat conduction extension structure, respectively, the high heat conduction characteristics of the transverse high heat conduction extension structure are used, and the temperature of an active layer of the semiconductor epitaxial structure can be quickly transmitted to the metal film resistance temperature measurement structure, so that the temperature of the active layer is monitored in real time by using the metal film resistance temperature measurement structure, whether a light-emitting diode is operated within a material safety temperature and whether a temperature rise of the light-emitting diode is abnormal due to a defect can be known, and measures can be taken in an early stage to cope with and avoid a sudden failure of an element. Moreover, the temperature measurement correction method comprises: simultaneously placing a plurality of connected uncut packaging substrates into a constant-temperature device so as to simultaneously obtain temperature correction relational expressions of the different packaging substrates, respectively, thereby reducing the costs of temperature correction by means of batch mass production.

Description

Temperature Measurable Vertical Light Emitting Diode Grain Structure and Its Temperature Measurement Correction Method

technical field

The present invention relates to the grain structure of light-emitting diodes, in particular to the grain structure of vertical light-emitting diodes capable of real-time detection of active layer temperature and its temperature measurement and correction method.

Background technique

A light-emitting diode (LED) is a light source that can use the recombination of electrons and holes in a semiconductor to generate high brightness. The product can be used in high-luminosity sterilization (ultraviolet light), car headlights and taillights (blue, yellow, and red light), projector light source (blue, green, and red light), and infrared security detection (infrared light). In addition to high luminosity and luminous density, excellent high-power LED components also need to have good reliability. Taking the automotive headlight module as an example, once the LED fails, it will affect the safety at night. With the high standard of automotive LED, even a small amount of failure of 1ppm still needs to be improved in the automotive industry. In light-emitting diodes (LEDs), the light-emitting layer of the crystal grain is the main source of heat energy, and it is also the highest temperature position of the component. If the temperature is too high for a long time, it will cause the failure of the light-emitting semiconductor grain, that is, the temperature of the light-emitting layer can be detected in real time. It is very important for high-power automotive LED components.

As shown in FIG. 1, in one embodiment, when a vertical LED chip 1 is packaged in SMD, the P electrode 2 is bonded to the die-bonding conductive base 4 of the package carrier 3 through a die-bonding conductive metal 4A. On the other hand, the N electrode 5 is electrically connected to the wire bonding terminal 7 by bonding the gold wire 6, and the die-bonding conductive base 4 and the wire bonding terminal 7 are respectively electrically connected to the packaging carrier 3 through the conductive metal 8. The anode (Anode) 9A and cathode (Cathode) 9B on the other side are packaged with the packaging material 3A.

For the vertical LED, the main structure of the vertical LED chip 1 includes three parts from top to bottom: a semiconductor epitaxial structure 1A, an interface structure 1B and a crystal conductive base structure 1C.

Wherein, the semiconductor epitaxial structure 1A is N-type semiconductor, active layer (light-emitting layer), and P-type semiconductor in sequence from top to bottom. The grain conductive base structure 1C includes a structural metal layer, an adhesive layer for a replacement substrate, and a replacement substrate with high thermal conductivity in sequence from top to bottom. The interface structure 1B is generally a structural metal layer with partial or full metal connecting the P-type semiconductor of the semiconductor epitaxial structure 1A and the grain conductive base structure 1C in an ohmic contact manner. Below the high thermal conductivity substitute substrate is the P electrode 2 . Under operation, the active layer provides electronic and electric compounding, and the electrical energy is converted into light energy and heat energy. This area is also the main heat source of the LED component. If the temperature of the active layer is too high, the component will fail. In order to understand its temperature, in product design and In the inspection, methods such as "Thermal Transient Testing Method" and "Infrared Thermography" will be used to evaluate the design of the die and inspect the product quality. These two measurement methods are both indirect measurements, and the measured temperature is likely to change with the environment and grain structure.

In addition, there is also a temperature measuring element installed on the LED circuit module (PCB board) to measure the instant temperature of the package body (that is, the vertical LED grain 1), but this method is too far away from the active layer of the semiconductor epitaxy structure 1A. , separated by too many boundaries, it is impossible to accurately measure the temperature of the active layer.

Obviously, there is currently no mass-produced LED die product that can directly measure the temperature near the active layer. The reason is that placing a temperature sensor on the structure of the active layer is not only complicated, but also reduces the luminous area of the crystal grain and reduces the luminous brightness. And for the current market's main small and medium-sized LED die products, since most of them operate at lower current densities, the active layer generates less heat, so there is no need to directly measure the temperature of the active layer.

However, for high-power LEDs used in headlights and projections, which are large-sized LED components and operate at high current densities, if the thermal state of the active layer can be monitored in real time, it will not only help optimize the design of the components; Detect abnormally high-temperature LED grains under operation, so as to take corresponding measures in advance to avoid sudden failure of the active layer due to over-temperature, and effectively improve the reliability of product use.

Contents of the invention

Therefore, the main purpose of the present invention is to disclose a vertical light-emitting diode grain structure that can detect the temperature of the active layer in real time, so as to meet the demand for real-time monitoring of the thermal state of the device.

A secondary purpose of the present invention is to disclose a temperature measurement calibration method to reduce the cost of temperature calibration.

The present invention is a vertical light-emitting diode grain structure that can detect the temperature of the active layer in real time, which includes a P-type electrode, a grain conductive base structure, a lateral high thermal conductivity extension structure, and a metal thin film resistance temperature measurement structure 1. A semiconductor epitaxial structure and an N-type electrode. Wherein the P-type electrode is disposed on one side of the grain conductive base structure, and the lateral high thermal conductivity extension structure is disposed on a side of the grain conductive base structure away from the P-type electrode. The metal film resistance temperature measuring structure includes an insulating support body and a temperature measuring metal film stacked in sequence, and the semiconductor epitaxial structure includes a P-type semiconductor, an active layer and an N-type semiconductor stacked in sequence, and the lateral The upper plane of the high thermal conductivity extension structure is respectively provided with the semiconductor epitaxial structure and the metal film resistance temperature measuring structure. In addition, the P-type semiconductor and the conductive base structure of the crystal grain are ohmic contacts with the P-type semiconductor through the lateral high thermal conductivity extension structure, and the semiconductor epitaxial structure is arranged on a side far away from the conductive base structure of the grain. The N-type electrode, and the N-type electrode is in ohmic contact with the N-type semiconductor.

And the vertical LED die structure can also include a loading board. The package carrier board has an upper plane and a lower plane on two sides, and the lower plane is provided with a negative pole, a positive pole, a first temperature test terminal and a second temperature test terminal. And the upper plane is provided with a first electrode, a second electrode, a first transfer contact and a second transfer contact, the first electrode is electrically connected to the negative electrode, the second electrode is electrically connected to the positive electrode, The first transfer contact is electrically connected to the first temperature test terminal, and the second transfer contact is electrically connected to the second temperature test terminal, wherein the N-type electrode and the first electrode are electrically connected by a bonding metal connected, the P-type electrode is electrically connected by directly bonding the second electrode through a crystal-bonding conductive metal, and the two thin-film terminals of the temperature-measuring metal film are electrically connected by a first connecting metal and a second connecting metal respectively. Connecting the first transfer contact and the second transfer contact. The temperature measurement calibration method includes the following steps:

Put a plurality of packaged substrates that have completed the die and electrical connection process and are connected and have not been cut into a constant temperature device;

Let the temperature of the constant temperature equipment reach at least two specified temperatures respectively;

Under the at least two specified temperatures, respectively, measure and obtain the resistance values of the first temperature test terminal and the second temperature test terminal of different package substrates; and

According to the measured resistance values, a temperature correction relational expression for different packaging substrates is respectively obtained.

Accordingly, the semiconductor epitaxial structure and the metal thin film resistance temperature measuring structure are respectively arranged on the upper plane of the lateral high thermal conductivity extension structure, and the heat generated by the active layer of the semiconductor epitaxial structure can be directly obtained by the high thermal conductivity of the lateral high The thermally conductive extension structure is transferred to the metal film resistance temperature measurement structure, and its temperature gradient changes little, so measuring the resistance change of the temperature measurement metal film can monitor the temperature of the active layer in real time, which is not only beneficial to detect defective products but also can Take corresponding measures in the early stage to avoid sudden failure of components due to overheating, and effectively improve the reliability of product use. The temperature measurement calibration method can achieve the effect of simultaneously calibrating the temperature of a large number of temperature measurement LED components.

Description of drawings

FIG. 1 is a schematic cross-sectional view of a conventional light-emitting diode packaging structure;

Fig. 2 is a schematic cross-sectional view of the packaging structure of the present invention;

Fig. 3A is a schematic cross-sectional view of the metal thin film resistance temperature measuring structure of the present invention;

Fig. 3B is a schematic top view of the metal thin film resistance temperature measuring structure of the present invention;

FIG. 3C is a schematic diagram of the relationship between resistance value and temperature;

Fig. 4 is a schematic cross-sectional view of the grain structure of the present invention;

Fig. 5 is a schematic top view of the grain structure of the present invention;

Fig. 6 is a schematic diagram of the first embodiment of the location of the temperature measuring structure of the present invention;

Fig. 7 is a schematic diagram of the second embodiment of the location of the temperature measuring structure of the present invention;

Fig. 8 is a schematic diagram of the third embodiment of the location of the temperature measuring structure of the present invention;

Fig. 9 is a schematic top view of the grain structure of the large-area temperature measurement of the present invention;

Fig. 10 is a schematic diagram of the implementation of temperature measurement correction in the present invention;

Fig. 11 is a schematic cross-sectional view of a multi-temperature measuring structure of the present invention;

Fig. 12 is another schematic cross-sectional view of the multi-temperature measuring structure of the present invention.

Detailed ways

In order to have a more in-depth understanding and recognition of the features, purposes and effects of the present invention, a preferred embodiment is hereby listed and described in conjunction with the accompanying drawings as follows:

Please refer to FIG. 2, the present invention is a temperature-measuring vertical light-emitting diode grain structure, which includes a P-type electrode 10, a grain conductive base structure 20, a lateral high thermal conductivity extension structure 30, a A metal thin film resistance temperature measuring structure 40 , a semiconductor epitaxial structure 50 , an N-type electrode 60 and a loading plate 70 . The P-type electrode 10 is disposed on one side of the grain conductive base structure 20 , and the lateral high thermal conductivity extension structure 30 is disposed on a side of the grain conductive base structure 20 away from the P-type electrode 10 .

The package carrier 70 has a lower plane 701 and an upper plane 702 located on both sides. The lower plane 701 is provided with a negative electrode 81, a positive electrode 82, a first temperature test terminal 83 and a second temperature test terminal 84. , and the upper plane 702 is provided with a first electrode 91 electrically connected to the negative electrode 81, a second electrode 92 electrically connected to the positive electrode 82, and a first switch electrically connected to the first temperature test terminal 83. The contact 93 is electrically connected to the second transfer contact 94 of the second temperature test terminal 84, wherein the N-type electrode 60 and the first electrode 91 are electrically connected by a bonding metal 71, and the P-type electrode 10 Then, the second electrode 92 is directly bonded to the second electrode 92 through a die-bonding conductive metal (not shown in the figure) for electrical connection. Furthermore, the present invention may further include a packaging material 80 , the packaging material 80 covers and packages the upper plane 702 of the package carrier 70 to form a protection structure.

Please refer to FIG. 3A, FIG. 3B and FIG. 3C together. The metal film resistance temperature measuring structure 40 includes an insulating support 41 and a temperature measuring metal film 42 stacked in sequence. The temperature measuring metal film 42 is preferably long. Shaped as a metal wire, and the temperature-measuring metal film 42 is repeatedly circled on the insulating support 41, and the temperature-measuring metal film 42 has two film end points 421, and the two film end points 421 of the temperature-measuring metal film 42 are respectively separated by a The first connection metal 72 and a second connection metal 73 are electrically connected to the first transfer contact 93 and the second transfer contact 94 . In addition, the material of the temperature-measuring metal film 42 is any one selected from platinum (Pt) or platinum metal alloy (Platinum alloy), and the metal film needs to have a good linear temperature resistance ratio characteristic (TCR: temperature coefficient of the electrical resistance) . The material of the insulating support 41 is any one selected from titanium dioxide (TiO ₂ ), silicon dioxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ) or magnesium oxide (MgO), as shown in FIG. 3C , The resistance of the temperature measuring metal thin film 42 is approximately proportional to the temperature.

Please refer to FIG. 4 and FIG. 5 together, the semiconductor epitaxial structure 50 includes a P-type semiconductor 51, an active layer 52 and an N-type semiconductor 53 stacked in sequence, and the lateral high thermal conductivity extension structure 30 The semiconductor epitaxial structure 50 and the metal thin film resistance temperature measuring structure 40 are respectively arranged on the upper plane. In addition, the P-type semiconductor 51 and the grain conductive base structure 20 are in ohmic contact through the lateral high thermal conductivity extension structure 30, and the semiconductor epitaxial structure 50 is provided on the side away from the grain conductive base structure 20. An N-type electrode 60 , and the N-type electrode 60 is in ohmic contact with the N-type semiconductor 53 . In addition, the grain conductive base structure 20 can be a high thermal conductivity substitute substrate 21 , a substitute substrate adhesive layer 22 and a structural metal layer 23 in sequence from bottom to top. The N-type electrode 60 can be connected to a plurality of extension electrodes 61 to increase the uniformity of current distribution.

Please refer to FIG. 6 again, which is a schematic diagram of the first embodiment for setting the position of the temperature measuring structure. The lateral high thermal conductivity extension structure 30 includes a highly conductive and thermally conductive metal layer 31 , an ohmic contact layer 32 and a high-concentration P-type semiconductor conductive layer 33 stacked in sequence. Wherein the highly conductive and thermally conductive metal layer 31 is located above the structural metal layer 23 , and the P-type semiconductor 51 and the metal film resistance temperature measuring structure 40 are respectively located on the high-concentration P-type semiconductor conductive layer 33 .

Please refer to FIG. 7 again, which is a schematic diagram of the second embodiment for setting the position of the temperature measuring structure. Wherein the highly conductive and thermally conductive metal layer 31 is located above the structural metal layer 23 , the P-type semiconductor 51 is located on the high-concentration P-type semiconductor conductive layer 33 , and the metal thin film resistance temperature measuring structure 40 is located on the ohmic contact layer 32 .

Please refer to FIG. 8 again, which is a schematic diagram of the third embodiment for setting the position of the temperature measuring structure. Wherein the highly conductive and thermally conductive metal layer 31 is located above the structural metal layer 23, the P-type semiconductor 51 is located on the high-concentration P-type semiconductor conductive layer 33, and the metal thin film resistance temperature measuring structure 40 is located on the highly conductive and thermally conductive metal layer. 31 on.

Please refer to FIG. 9 again, which is a schematic top view of the grain structure of the large-area temperature measurement of the present invention. Wherein the insulating support 41 is disposed around at least one side of the semiconductor epitaxial structure 50 , for example, as shown in FIG. 5 , the insulating support 41 is disposed around one side of the semiconductor epitaxial structure 50 . As shown in FIG. 9 , the insulating support body 41 is arranged around three sides of the semiconductor epitaxial structure 50 . In other embodiments, the insulating support 41 can also be disposed around two sides or four sides of the semiconductor epitaxial structure 50 .

Please refer to FIG. 10 again, which is a schematic diagram of the implementation of temperature measurement and correction in the present invention. In order to improve mass production and save costs, the present invention discloses a method for batch temperature measurement and correction of vertical light-emitting diode grain structure, the steps of which include:

Place a plurality of uncut packaging substrates 70 connected to each other into a constant temperature device (not shown in the figure);

At the at least two specified temperatures (for example, 0°C and 150°C), the resistance values R1, R1, R2, R3; and

According to the measured resistance values R1 , R2 , R3 , a temperature correction relational expression for different packaging substrates 70 is respectively obtained.

Wherein when measuring resistance value R1, R2, R3, for utilizing a probe card 76 (Probe card), this probe card 76 has this first temperature test end point 83 and this second temperature of corresponding different this package carrier board 70 The measuring probe 761 (measuring probe) of the test terminal 84 can measure the resistance values R1, R2, R3 of the first temperature test terminal 83 and the second temperature test terminal 84.

According to the above steps, the temperature measurement and calibration of multiple packaging substrates 70 can be completed at one time, which can save costs.

Please refer to FIG. 11 again, which is a schematic structural cross-sectional view of the multi-temperature measuring structure of the present invention. The second electrode 92 extends laterally out of a temperature measurement area 921, and the temperature measurement area 921 is provided with another metal thin film resistance temperature measurement structure 40A, and the other metal thin film resistance temperature measurement structure 40A includes another insulating support stacked in sequence Body 41A and another temperature-measuring metal film 42A, and the lower plane 701 is also provided with a third temperature test terminal 85 and a fourth temperature test terminal 86, and the upper plane 702 is also provided with an electrical connection to the third temperature The third transfer contact 95 of the test terminal 85 is electrically connected to the fourth transfer contact 96 of the fourth temperature test terminal 86, and the two thin-film terminals 421A of the other temperature-measuring metal film 42A are respectively connected to a third contact metal. 74 and a fourth connecting metal 75 electrically connect the third transfer contact 95 and the fourth transfer contact 96 .

Please refer to FIG. 12 again, which is another schematic cross-sectional view of the multi-temperature measuring structure of the present invention. The lower plane 701 is also provided with the third temperature test terminal 85 and the fourth temperature test terminal 86, and is provided with another metal thin film resistance temperature measurement structure 40B, and the other metal thin film resistance temperature measurement structure 40B includes stacking in sequence Another insulating support 41B and another temperature-measuring metal film 42B, and the two film terminals 421B of the other temperature-measuring metal film 42B are electrically connected to the third temperature testing terminal 85 and the fourth temperature testing terminal 86 respectively. The lower plane 701 also has a receiving groove 703 for receiving the other metal thin film resistance temperature measuring structure 40B. In order to increase heat dissipation efficiency, the package carrier 70 is further provided with an insulating high thermal conductivity filler 90 on the lower plane 701 , and the package carrier 70 is fixed on a circuit board 100 with the insulation and high thermal conductivity filler 90 separated.

As mentioned above, the features of the present invention include at least:

1. The position of the metal thin film resistance temperature measurement structure is quite close to the semiconductor epitaxial structure, and the temperature of the crystal grain can be measured immediately (In-Situ) at the position closest to the active layer, which can not only measure and discover the semiconductor The epitaxy structure is extremely high temperature, and preventive measures are taken on the spot: such as reducing the current to avoid burning or subsequent maintenance can be guaranteed in advance. According to the temperature of the active layer, the engineering optimization of the grain conductive base structure and packaging material can also be carried out to improve the heat dissipation capability of the component and increase its reliability.

2. By placing multiple uncut packaging substrates into a constant temperature device at one time, it is possible to establish a batch temperature correction relationship for a large number of dies to be measured, and solve the problem of individual components. The cost of testing is high and complicated.

3. The temperature of the semiconductor epitaxial structure close to the active layer can be measured simply, directly and immediately. If there is an abnormally high temperature, safety procedures (warning, current reduction or stop) can be carried out to prevent a single component from burning out and affecting the overall lighting .

4. Let multiple metal thin film resistance temperature measurement structures be set at different positions of the vertical light-emitting diode grain structure. There are two temperature values to estimate the change of the temperature gradient, which can be more effectively designed for optimal heat dissipation design and more effective monitoring of heat dissipation , and emergency maintenance disposal.

Claims

A temperature-measurable vertical light-emitting diode grain structure, characterized in that it includes:

a P-type electrode;

A grain conductive base structure, the P-type electrode is arranged on one side of the grain conductive base structure;

A lateral high thermal conductivity extension structure, the lateral high thermal conductivity extension structure is arranged on the side of the grain conductive base structure away from the P-type electrode;

A metal thin film resistance temperature measurement structure, the metal thin film resistance temperature measurement structure includes an insulating support and a temperature measurement metal film stacked in sequence;

A semiconductor epitaxial structure, the semiconductor epitaxial structure includes a P-type semiconductor, an active layer and an N-type semiconductor stacked in sequence, and the upper plane of the lateral high thermal conductivity extension structure is respectively provided with the semiconductor epitaxial structure and the metal film Resistance temperature measurement structure, the P-type semiconductor and the conductive base structure of the crystal grain achieve ohmic contact through the lateral high thermal conductivity extension structure; and

An N-type electrode, the N-type electrode is provided on the side of the semiconductor epitaxial structure far away from the grain conductive base structure, and the N-type electrode is in ohmic contact with the N-type semiconductor.
The vertical light-emitting diode grain structure according to claim 1, wherein the laterally extended structure with high thermal conductivity comprises a highly conductive and thermally conductive metal layer, an ohmic contact layer, and a high-concentration P-type semiconductor conductive layer stacked in sequence. , and the conductive base structure of the crystal grains is a high thermal conductivity substitute substrate, a substitute substrate bonding layer and a structural metal layer in sequence from bottom to top.
The vertical light-emitting diode grain structure according to claim 2, characterized in that, the highly conductive and thermally conductive metal layer is located above the structural metal layer, and the P-type semiconductor and the metal thin film resistance temperature measuring structure are respectively located at the high concentration on the P-type semiconductor conductive layer.
The vertical light emitting diode grain structure according to claim 2, wherein the highly conductive and thermally conductive metal layer is located above the structural metal layer, the P-type semiconductor is located on the high-concentration P-type semiconductor conductive layer, and the The metal film resistance temperature measuring structure is located on the ohmic contact layer.
The vertical light emitting diode grain structure according to claim 2, wherein the highly conductive and thermally conductive metal layer is located above the structural metal layer, the P-type semiconductor is located on the high-concentration P-type semiconductor conductive layer, and the The metal thin film resistance temperature measuring structure is located on the highly conductive and thermally conductive metal layer.
The vertical light emitting diode grain structure according to claim 1, wherein the temperature-measuring metal thin film is in the shape of a long metal wire.
The vertical light-emitting diode grain structure according to claim 6, wherein the temperature-measuring metal thin film repeatedly surrounds the insulating support.
The vertical light-emitting diode grain structure according to claim 1, wherein the material of the temperature-measuring metal thin film is any one selected from platinum or a platinum metal alloy, and the material of the insulating support is selected from titanium dioxide , silica, alumina or magnesia.
The vertical light-emitting diode grain structure according to claim 1, wherein the insulating support is disposed around at least one side of the semiconductor epitaxial structure.
The vertical light-emitting diode grain structure according to claim 1, characterized in that it further comprises a carrier board, the package carrier board has an upper side plane and a lower side plane located on both sides, and the lower side plane is provided with a Negative electrode, a positive electrode, a first temperature test terminal and a second temperature test terminal, and the upper plane is provided with a first electrode electrically connected to the negative electrode, a second electrode electrically connected to the positive electrode, an electrical A first transfer contact connected to the first temperature test terminal and a second transfer contact electrically connected to the second temperature test terminal, wherein the N-type electrode and the first electrode are electrically connected by a bonding metal , the P-type electrode is electrically connected by directly bonding the second electrode through a crystal-bonding conductive metal, and the two thin-film terminals of the temperature-measuring metal film are respectively electrically connected by a first connecting metal and a second connecting metal The first transfer contact and the second transfer contact.
The vertical LED grain structure according to claim 10 , further comprising an encapsulation material covering and encapsulating the upper plane of the encapsulation carrier.
The vertical light-emitting diode grain structure according to claim 10, wherein the second electrode extends laterally out of a temperature measuring area, and the temperature measuring area is provided with another metal thin film resistance temperature measuring structure, and the other metal The thin-film resistance temperature measurement structure includes another insulating support and another temperature-measuring metal film stacked in sequence, and the lower plane is also provided with a third temperature test terminal and a fourth temperature test terminal, and the upper plane is also provided with A third transfer contact electrically connected to the third temperature test terminal and a fourth transfer contact electrically connected to the fourth temperature test terminal, and the two ends of the other temperature-measuring metal film are respectively connected by a third The metal and a fourth connecting metal are electrically connected to the third transfer contact and the fourth transfer contact.
The vertical light-emitting diode grain structure according to claim 10, wherein a third temperature test terminal, a fourth temperature test terminal and another metal thin film resistance temperature measurement structure are arranged on the lower plane, and the Another metal film resistance temperature measurement structure includes another insulating support and another temperature measuring metal film stacked in sequence, and the two thin film terminals of the other temperature measuring metal film are respectively electrically connected to the third temperature testing terminal and the first temperature testing terminal. Four temperature test endpoints.
The vertical light emitting diode grain structure according to claim 13, wherein the lower plane further has an accommodating groove for accommodating the other metal thin film resistance temperature measuring structure.
The vertical light-emitting diode grain structure according to claim 14, wherein an insulating high thermal conductivity filler is arranged on the lower plane of the package carrier, and the package carrier is fixed on the insulating high thermal conductivity filler at a distance from the package carrier. on a circuit board.
A temperature measurement and correction method for a vertical light-emitting diode grain structure according to claim 10, wherein the steps include:

placing a plurality of uncut packaged substrates in a constant temperature device;

Let the temperature of the constant temperature equipment reach at least two specified temperatures respectively;

Under the at least two specified temperatures, respectively, measure and obtain the resistance values of the first temperature test terminal and the second temperature test terminal of different package substrates; and

According to the measured resistance values, a temperature correction relational expression for different packaging substrates is respectively obtained.