CN105023858B - A kind of LED component and its manufacturing method of integrated graphene temperature sensing - Google Patents
A kind of LED component and its manufacturing method of integrated graphene temperature sensing Download PDFInfo
- Publication number
- CN105023858B CN105023858B CN201510308515.2A CN201510308515A CN105023858B CN 105023858 B CN105023858 B CN 105023858B CN 201510308515 A CN201510308515 A CN 201510308515A CN 105023858 B CN105023858 B CN 105023858B
- Authority
- CN
- China
- Prior art keywords
- temperature sensor
- temperature
- graphene
- led
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73257—Bump and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of LED component and its manufacturing method of integrated graphene temperature sensing, which includes LED light emitting device and temperature sensor on chip.Temperature sensor is a kind of graphene device.LED light emitting device and temperature sensor use back-to-back stacked on top structure, and top is LED light emitting device, and lower section is temperature sensor.The junction temperature of LED light emitting device can be monitored by graphene film resistance variation with temperature in measuring temperature senser element.Integrated graphene temperature sensing LED component provided by the invention can not only in real time, the accurate, junction temperature of reflection LED component stablized, and can effectively improve the heat dissipation of the light emission rate and the entire device of improvement of LED light emitting device.
Description
Technical field
The present invention relates to a kind of luminescent device and production methods, more particularly, to a kind of integrated graphene temperature sensing
LED light emitting device and its manufacturing method.
Background technology
Light emitting diode (light-emitting-diode, LED) is solid-state lighting cold light source of new generation, efficiency is high,
Long lifespan, voltage is low, simple in structure, small, light-weight, fast response time, the features such as anti-seismic performance is good and spectrum is full-color, make
It is obtained to be widely used in the various occasions such as backlight, display, traffic light and room lighting.Especially general
In terms of illumination, LED has apparent advantage than conventional light source, will become next-generation lighting source.
Constantly universal with the application of LED, the integrity problem of LED is an important factor for restricting its development always, especially
It is the junction temperature measurement problem closely bound up with LED luminance and service life.
Different from traditional heat radiation light source, LED is a kind of electroluminescent device, it directly converts electrical energy into luminous energy.
But for the power-type LED of current technology maturation, electro-optical efficiency only has 30% or so, remaining 70% or so energy
It is wholly converted into thermal energy, the junction temperature of LED is caused to increase.The raising of junction temperature can lead to the acceleration of semiconductor defect proliferation and package material
The problems such as material is degenerated, the photoelectric characteristic so as to cause device constantly changes and decaying.By the real-time monitoring to junction temperature, favorably
In more accurately analyzing LED failure phenomenon and mechanism, knot caused by LED reliabilities, and monitoring protection improper use is improved
Temperature is excessively high, is conducive to the life and reliability for improving LED.
The prior art generally feeds back LED's using the external temperature sensor for measuring specific position in encapsulation or lamps and lanterns
Operating temperature.Patent if Authorization Notice No. is CN203118989U discloses a kind of LED encapsulation method for realizing that junction temperature is controllable.
In that patent, a temperature sensor is placed inside package lens near the LED chip realize temperature feedback.But due to by
The radiating condition of encapsulation influences, and measured temperature is not actual temperature (virtual junction temperature meeting higher) at LED junction.Since heat passes
Defeated to need the regular hour, external temperature sensor can not reflect LED chip junction temperature at this time in real time.Another known technology
Be using LED itself as temperature sensor, it is anti-by the forward voltage monitored under normal drive current or under low current
Reflect junction temperature size.However, under normal drive current, LED will produce self-heating effect, this will influence temperature measurement accuracy；Small
Under electric current driving, since in LED operation state and test mode transfer process, junction temperature quickly reduces, this will also influence temperature
The accuracy of measurement.
Invention content
In order to overcome the shortcomings and deficiencies of the prior art described above, the present invention provides a kind of integrated graphene temperature sensing
LED component.
Meanwhile the present invention also provides the manufacturing methods of the LED component of the integrated graphene temperature sensing.
A kind of LED component of integrated graphene temperature sensing includes LED light emitting device and temperature sensor on chip；
The temperature sensor is a kind of graphene device.
The LED light emitting device and temperature sensor use back-to-back stacked on top structure, and top is with formal dress
The LED light emitting device of chip structure, lower section are temperature sensors；Temperature sensor lower surface is fixed on heat-radiating substrate simultaneously
And its electrode is electrically connected with the wiring on substrate.
The structure of the temperature sensor includes graphene film, two or more metal film electrodes.
The substrate of the LED light emitting device is insulation or highly resistant material, including sapphire or silicon carbide.
The number of plies of the graphene film includes one layer, one kind in two layers or multilayer.
The metal film electrode material includes one kind or combinations thereof in Pt, Al, Ag, Ni, Ti, Au.
The interval width of two metal film electrode be much smaller than chip width, preferably 10-100 μm.
A kind of LED component production method of integrated graphene temperature sensing includes the following steps：
LED light emitting device is prepared on substrate；
In substrate back preparation temperature senser element；
Temperature sensor is connected with heat-radiating substrate.
The making step of the temperature sensor is
(1) graphene film is transferred to the back side of substrate；
(2) the deposited metal membrane electrode on the graphene film, and carve and break in the intermediate corrosion of the metal film electrode,
The metal film electrode of partition is respectively formed the positive and negative polarities of temperature sensor；
(3) in sample surfaces deposit passivation layer, and it is lithographically formed mask, mask is removed after corrosion and passivation layer, expose metal foil
The contact hole of membrane electrode；
The making step that the temperature sensor is connected with heat-radiating substrate is
(1) insulating layer and circuit layer are made respectively on heat-radiating substrate；
(2) use flip chip bonding or reflow method, by the positive and negative polarities of temperature sensor respectively on heat-radiating substrate
Circuit layer corresponds to engagement.
Compared with prior art, the invention has the advantages that：
1, temperature sensor and LED light emitting device are integrated in same semiconductor core on piece, the two devices are mutually electric
Independent, the measurement of junction temperature does not influence the normal work of LED.Since temperature sensor leans on LED light emitting device close, and temperature
Senser element is spent between LED light emitting device and heat-radiating substrate, therefore temperature sensor is sent out with LED within the extremely short time
The temperature of optical device reaches balance.This temperature sensor can in real time, accurately monitor the junction temperature of LED light emitting device.
2, since graphene has good thermal stability, this contributes to the stable work in work of temperature sensor.
3, graphene film with extraordinary translucency and the high optical reflectance metal film electrode deposited on it
Light absorption can be reduced, the light emission rate for improving LED is conducive to.
4, graphene and metal film electrode all have good lateral thermal conductivity, and metal film electrode and heat-radiating substrate
It is in direct contact.This helps to reduce LED active areas to the thermal resistance of heat-radiating substrate, increases the heat dissipation characteristics of LED.
5, LED light emitting device and temperature sensor stacked on top, do not increase device size additionally.
Description of the drawings
Fig. 1 is the structural schematic diagram of the LED component of integrated graphene temperature sensing of the present invention.
100：LED light emitting device；200：Temperature sensor；101：P-type electrode；102：N-type electrode；103：P-type is partly led
Body layer；104：Active layer；105：N type semiconductor layer；106：Substrate；201：Graphene film；202：Metal film electrode；203：
Passivation layer；301：Heat-radiating substrate；302：Substrate insulating layer；303：Substrate circuit layer；401、402：The electrode of LED light emitting device connects
Line end；403、404：The electrode terminal of temperature sensor；501：Salient point.
Specific implementation mode
The invention will be further described with reference to the accompanying drawings and examples.
Referring to Fig. 1, it is the structural schematic diagram of the LED component of integrated graphene temperature sensing of the present invention.The device
Include LED light emitting device 100 and temperature sensor 200 on the chip of part.The temperature sensor 200 is a kind of graphene device
Part.LED light emitting device 100 and temperature sensor 200 use back-to-back stacked on top structure, and mutually electrically independent, top
It is the LED light emitting device 100 with formal dress chip structure, lower section is temperature sensor 200.200 following table of temperature sensor
Face is fixed on heat-radiating substrate 301 and its electrode is electrically connected with the wiring on substrate.
The structure of the temperature sensor 200 includes graphene film 201, two metal film electrodes 202, passivation layer 203.
LED can be monitored in real time by the 201 resistance value variation with temperature relationship of graphene film in measuring temperature senser element 200
The junction temperature of luminescent device 100.The resistance value of graphene film is linear as the temperature increases in 300-500K temperature ranges to drop
It is low.When 300K, resistance value size is about 0.2-5 × 10^5 Ω, and resistance-temperature coefficient is about 150-350 Ω/K.
The production method of the LED component of the integrated graphene temperature sensing of the present embodiment, comprises the following steps：
(1) MOCVD technologies are used, n type semiconductor layer 105, active layer 104 and p-type is grown successively on substrate 106 and partly leads
Body layer 103.The material of the substrate 106 is sapphire or silicon carbide；
(2) ICP lithographic techniques are used, are etched down in n type semiconductor layer 105 from the side of p type semiconductor layer 103,
Table top is formed in the side of n type semiconductor layer 105；
(3) sputtering technology is used, prepares on p type semiconductor layer 103 and respectively LED on the table top of n type semiconductor layer 105
The P-type electrode 101 and N-type electrode 102 of luminescent device 100；
(4) one temporary base is connected with the wafer upper surface comprising LED light emitting device 100 by photosensitive resin.It is this
Photosensitive resin can play cementation by the method solidified resin of ultraviolet light.
(5) by the 106 thinning back side grinding and polishing of wafer substrate comprising LED light emitting device 100, retain substrate thickness about
100μm；
(6) graphene film 201 is transferred to the back side of substrate 106；The number of plies of the graphene film 201 can be single
Layer or multilayer；
(7) the deposited metal membrane electrode 202 on the graphene film 201, and carved in the intermediate corrosion of the metallic film
Disconnected, the metal film electrode 202 of partition is respectively formed the positive and negative polarities of temperature sensor 200.Among metal film electrode 202
The width of etching be much smaller than chip width, preferably 10-100 μm；202 material of metal film electrode be Pt, Al,
One kind in Ag, Ni, Ti, Au or combinations thereof；
(8) passivation layer 203 is formed in sample surfaces deposition silica, and is lithographically formed mask, gone after corrosion and passivation layer
Mask exposes the contact hole of metal film electrode；203 material of the passivation layer is alternatively aluminium oxide or aluminium nitride；
(9) with corrosive liquid by LED light emitting device 100 resin and temporary base remove, temporary base can be sharp again
With reduction waste；
(10) divide, detach disk, obtain the chip such as LED light emitting device 100 in figure.
(11) insulating layer 302 and circuit layer 303 are made respectively on heat-radiating substrate 301, using flip chip bonding or Reflow Soldering side
Method connects the positive and negative polarities of temperature sensor 200 by the way that salient point 501 is corresponding with the circuit layer of heat-radiating substrate 301 303 respectively
It closes, and electrode terminal 403 and 404 corresponding on heat-radiating substrate 301 is electrically connected respectively；
(12) by Wire Bonding Technology, by the positive and negative electrode 101 of LED light emitting device 100 and 102 respectively with heat-radiating substrate
Corresponding electrode terminal 401 and 402 is correspondingly connected on 301.
The LED component for the integrated graphene temperature sensing completed according to an embodiment of the invention can utilize graphene temperature
Spend graphene film resistance variation with temperature relationship in senser element in real time, the junction temperature of accurate measurements LED component.Due to stone
Black alkene has good thermal stability, this helps to improve the job stability of temperature sensor.And the height of graphene is thoroughly
Light, the high reflectance of high heat conduction characteristic and metallic film, high heat conduction characteristic contribute to the thermal resistance for reducing entire LED component, increase
Its light emission rate.
Particular embodiments described above has carried out further the purpose of the present invention, technical solution and advantageous effect
It is described in detail, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention,
All within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the present invention's
Within protection domain.
Claims (9)
1. a kind of LED component of integrated graphene temperature sensing, it is characterised in that：Include LED light emitting device and temperature on chip
Spend senser element；The temperature sensor is a kind of graphene device, and the structure of the temperature sensor includes that graphene is thin
Film, two or more metal film electrodes；
The LED light emitting device and temperature sensor use back-to-back stacked on top structure, and top is that have positive cartridge chip
The LED light emitting device of structure, lower section are temperature sensors；Temperature sensor lower surface is fixed on heat-radiating substrate, and
The electrode of the temperature sensor is electrically connected using inverted structure by the electrode terminal on salient point and heat-radiating substrate, institute
Stating the positive and negative electrode of LED light emitting device, electrode terminal corresponding on heat-radiating substrate is correspondingly connected with respectively.
2. the LED component of integrated graphene temperature sensing according to claim 1, it is characterised in that：The LED light emitter
The substrate of part is insulation or highly resistant material, including sapphire or silicon carbide.
3. the LED component of integrated graphene temperature sensing according to claim 1, it is characterised in that：The graphene is thin
The number of plies of film includes one layer, one kind in two layers or multilayer.
4. the LED component of integrated graphene temperature sensing according to claim 1, it is characterised in that：The metallic film
Electrode material includes one kind or combinations thereof in Pt, Al, Ag, Ni, Ti, Au.
5. the LED component of integrated graphene temperature sensing according to claim 1, it is characterised in that：It is two neighboring described
The interval width of metal film electrode is much smaller than the width of chip.
6. the LED component of integrated graphene temperature sensing according to claim 5, it is characterised in that：It is two neighboring described
The interval width of metal film electrode is 10-100 μm.
7. the production method of the LED component of the integrated graphene temperature sensing described in any one of claim 1-6, feature exist
In including the following steps：
LED light emitting device is prepared on substrate；
In substrate back preparation temperature senser element；
Temperature sensor is connected with heat-radiating substrate.
8. the production method of the LED component of integrated graphene temperature sensing according to claim 7, which is characterized in that institute
The making step for the temperature sensor stated is：
(1) graphene film is transferred to the back side of substrate；
(2) the deposited metal membrane electrode on the graphene film, and carve disconnected, partition in the intermediate corrosion of the metal film electrode
Metal film electrode be respectively formed the positive and negative polarities of temperature sensor；
(3) in sample surfaces deposit passivation layer, and it is lithographically formed mask, mask is removed after corrosion and passivation layer, expose metallic film electricity
The contact hole of pole.
9. the LED component production method of integrated graphene temperature sensing according to claim 8, which is characterized in that described
The making step that is connected with heat-radiating substrate of temperature sensor be：
(1) insulating layer and circuit layer are made respectively on heat-radiating substrate；
(2) use flip chip bonding or reflow method, by the positive and negative polarities of temperature sensor respectively with the circuit on heat-radiating substrate
The corresponding engagement of layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510308515.2A CN105023858B (en) | 2015-06-05 | 2015-06-05 | A kind of LED component and its manufacturing method of integrated graphene temperature sensing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510308515.2A CN105023858B (en) | 2015-06-05 | 2015-06-05 | A kind of LED component and its manufacturing method of integrated graphene temperature sensing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105023858A CN105023858A (en) | 2015-11-04 |
| CN105023858B true CN105023858B (en) | 2018-10-09 |
Family
ID=54413725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510308515.2A Active CN105023858B (en) | 2015-06-05 | 2015-06-05 | A kind of LED component and its manufacturing method of integrated graphene temperature sensing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105023858B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105841739B (en) * | 2016-03-25 | 2018-10-26 | 南方科技大学 | Temperature Humidity Sensor and preparation method thereof, temperature/humidity measuring system |
| CN106783653B (en) * | 2016-11-24 | 2019-06-07 | 天津津航计算技术研究所 | Chip interior temperature monitoring apparatus based on multi-chip stacking technique |
| CN108336065A (en) * | 2018-01-31 | 2018-07-27 | 韩德军 | A kind of automatic temperature-adjusting control LED component |
| CN109920904B (en) * | 2019-04-10 | 2023-11-10 | 黄山学院 | Heat radiation structure of high-power GaN-based LED and processing technology |
| WO2023108487A1 (en) * | 2021-12-15 | 2023-06-22 | 联嘉光电股份有限公司 | Temperature-measurable vertical light-emitting diode grain structure and temperature measurement correction method therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103148952A (en) * | 2013-03-12 | 2013-06-12 | 上海第二工业大学 | Surface temperature test circuit based on graphene nanobelt and test method |
| CN204062952U (en) * | 2014-09-26 | 2014-12-31 | 上海集成电路研发中心有限公司 | A kind of radiator structure of LED lamp |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9178129B2 (en) * | 2012-10-15 | 2015-11-03 | The Trustees Of The Stevens Institute Of Technology | Graphene-based films in sensor applications |
-
2015
- 2015-06-05 CN CN201510308515.2A patent/CN105023858B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103148952A (en) * | 2013-03-12 | 2013-06-12 | 上海第二工业大学 | Surface temperature test circuit based on graphene nanobelt and test method |
| CN204062952U (en) * | 2014-09-26 | 2014-12-31 | 上海集成电路研发中心有限公司 | A kind of radiator structure of LED lamp |
Non-Patent Citations (1)
| Title |
|---|
| A Novel Silicon-Based LED Packaging Module With an Integrated Temperature Sensor;Shengwei Chang et al.;《IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY》;20140501;第4卷(第5期);769-776 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105023858A (en) | 2015-11-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105023858B (en) | A kind of LED component and its manufacturing method of integrated graphene temperature sensing | |
| JP5179766B2 (en) | Semiconductor light emitting device and manufacturing method thereof | |
| TW554553B (en) | Sub-mount for high power light emitting diode | |
| CN105874619B (en) | The manufacturing method of light emitting device substrate, light emitting device and light emitting device substrate | |
| US9153745B2 (en) | Light-emitting diode package and method of fabricating the same | |
| JP2007194385A (en) | Semiconductor light emitting device, and method of manufacturing same | |
| CN102800778B (en) | Light-emitting diode with inverted chip and manufacturing method of light-emitting diode | |
| CN103682004B (en) | A kind of light emitting diode flip-chip for improving light emission rate and preparation method thereof | |
| JP4963950B2 (en) | Semiconductor light emitting device and manufacturing method thereof | |
| CN102339921A (en) | Semiconductor light-emitting device and method of producing the same | |
| JP2008091459A (en) | Led illumination apparatus and manufacturing method thereof | |
| TW201212303A (en) | LED packaging structure and packaging method thereof | |
| CN105514230B (en) | GaN base LED vertical chip structure and preparation method thereof | |
| WO2014012323A1 (en) | Method for manufacturing flip-chip bonding light-emitting diode | |
| JP4836769B2 (en) | Semiconductor light emitting device and manufacturing method thereof | |
| CN108365057A (en) | A kind of light emitting diode with vertical structure and its manufacturing method | |
| CN105226140B (en) | Flip LED chips preparation method | |
| TW201442283A (en) | Light emitting diode (LED) device and manufacturing method thereof | |
| TW201205882A (en) | Manufacturing method for LED light emitting device | |
| CN108365056A (en) | A kind of light emitting diode with vertical structure and its manufacturing method | |
| TWI470836B (en) | Light-emitting diode package structure | |
| CN203503689U (en) | Flip-chip-type LED chip | |
| CN203456494U (en) | Flip-chip LED chip | |
| TWI420713B (en) | Led package and method of manufacturing the same | |
| TW200910639A (en) | LED package and method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |