WO2023103259A1 - 适用于热电堆的塞贝克系数测量结构及其制备方法 - Google Patents

适用于热电堆的塞贝克系数测量结构及其制备方法 Download PDF

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WO2023103259A1
WO2023103259A1 PCT/CN2022/089119 CN2022089119W WO2023103259A1 WO 2023103259 A1 WO2023103259 A1 WO 2023103259A1 CN 2022089119 W CN2022089119 W CN 2022089119W WO 2023103259 A1 WO2023103259 A1 WO 2023103259A1
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thermocouple
unit body
seebeck coefficient
measured
substrate
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PCT/CN2022/089119
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English (en)
French (fr)
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石梦
毛海央
周娜
龙克文
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佛山市川东磁电股份有限公司
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Publication of WO2023103259A1 publication Critical patent/WO2023103259A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity

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  • the invention relates to a Seebeck coefficient measuring structure and a preparation method thereof, in particular to a Seebeck coefficient measuring structure suitable for a thermopile and a preparation method thereof.
  • the Seebeck coefficient is an inherent property of thermoelectric materials, and it is a parameter that reflects the performance of thermoelectric materials.
  • the size of Seebeck coefficient will directly determine the performance of thermopile devices. Expanding the measurement of the Seebeck coefficient is helpful to further analyze the thermoelectric conversion efficiency analysis and device performance analysis of the thermopile infrared sensor, but in the actual application process, on the one hand, the parameters of the material will be affected by the processing process.
  • the Beck coefficient is difficult to determine; on the other hand, the Seebeck coefficient of the micro-nano structure puts forward high requirements on the accuracy and complexity of the test system, which makes it difficult to measure the actual Seebeck coefficient.
  • the Seebeck coefficient test methods or instruments are relatively complicated, and some have restrictions on the type and size of the test sample, for example, only the Seebeck coefficient of the thin film structure or the Seebeck coefficient of the polysilicon material can be measured; some test instruments Coolant devices and vacuum devices are required, which increases the complexity of the test system. Especially for the measurement of Seebeck coefficient at the micro-nano scale, it is difficult to accurately measure the voltage output and temperature. The existing test methods often have large errors, which will further limit the analysis of thermoelectric conversion efficiency at the micro-nano scale and the application of infrared thermopile sensors. Device performance analysis.
  • the purpose of the present invention is to overcome the deficiencies in the prior art, to provide a Seebeck coefficient measurement structure suitable for thermopiles and a preparation method thereof, which can effectively realize the measurement of the Seebeck coefficient, and the measurement efficiency is high, which is different from the existing technology Compatible, safe and reliable, and can be integrated with corresponding thermocouple devices to accurately evaluate the performance of thermopile devices.
  • the measurement structure of the Seebeck coefficient includes a substrate and a Seebeck coefficient unit body to be measured arranged above the front surface of the substrate, and also includes a temperature measuring unit body prepared above the front surface of the substrate and The back chamber is arranged on the back of the substrate, wherein the temperature measuring unit body and the Seebeck coefficient unit body to be measured are located directly above the back chamber, the temperature measurement unit body is adjacent to the Seebeck coefficient unit body to be measured, and the Seebeck coefficient unit body is to be measured One end of the unit body is located outside the back cavity to form the cold end of the unit body to be tested for Seebeck coefficient;
  • the test heat source to perform the required thermal excitation on the temperature measuring unit and the Seebeck coefficient unit to be measured at the same time, and obtain the test temperature before and after the thermal excitation of the Seebeck coefficient unit to be measured by measuring the temperature measuring unit difference ⁇ T, measure the output voltage V of the Seebeck coefficient unit body to be measured under the corresponding thermal excitation state, then the Seebeck coefficient ⁇ of the Seebeck coefficient unit body to be measured is
  • the test temperature difference ⁇ T is
  • R1 is the resistance value of the temperature measuring unit body after being heated and excited
  • R2 is the resistance value of the temperature measuring unit body before being heated and excited
  • ⁇ is the resistance temperature coefficient of the temperature measuring unit body.
  • the test heat source includes a blackbody or a laser, and the Seebeck coefficient unit body to be tested includes a thermocouple or a pair of thermocouples.
  • It also includes a heat absorbing structure for enhancing heat absorption, the heat absorbing structure is located above the substrate, and the heat absorbing structure is in contact with the temperature measuring unit and the hot end of the Seebeck coefficient unit to be measured.
  • the heat-absorbing structure includes a heat-absorbing layer and/or a micro-nano structure.
  • a method for preparing a Seebeck coefficient measurement structure providing a substrate, and preparing a Seebeck coefficient unit body to be measured and a temperature measurement unit body adjacent to the Seebeck coefficient unit body to be measured on the front surface of the substrate, A back cavity is prepared on the back side of the substrate, the temperature measuring unit body and the Seebeck coefficient unit body to be measured are located directly above the back cavity, and one end of the Seebeck coefficient unit body to be measured is located outside the back cavity to form a Seebeck coefficient to be measured The cold end of the unit cell.
  • the Seebeck coefficient unit body to be measured includes a thermocouple or a pair of thermocouples, and also includes a heat absorbing structure, the heat absorbing structure is located above the substrate, and the heat absorbing structure is connected with the temperature measuring unit and the Seebeck The coefficients are in contact with the hot ends of the unit under test.
  • thermocouple When the Seebeck coefficient unit body to be measured is a thermocouple, the preparation method comprises the following steps:
  • Step 1 providing a substrate and a substrate protection support layer arranged on the front side of the substrate, and preparing a thermocouple on the substrate protection support layer;
  • Step 2 preparing a thermocouple insulating and heat-conducting layer above the substrate, the thermocouple insulating and heat-conducting layer covering the thermocouple and supported on the substrate protection support layer;
  • Step 3 selectively masking and etching the thermocouple insulation and heat conduction layer to prepare a thermocouple lead-out hole penetrating through the thermocouple insulation and heat conduction layer, and exposing the end of the thermocouple through the thermocouple lead-out hole;
  • thermocouple electrodes electrically connected to the thermocouples and the temperature measuring unit body adjacent to the thermocouples, wherein the thermocouple electrodes include thermocouple first electrodes and thermocouple second thermocouple electrodes respectively filled in the thermocouple lead-out holes.
  • the electrodes, the first electrode body of the thermocouple, and the second electrode of the thermocouple are respectively electrically connected to the corresponding ends of the thermocouple, and the temperature measuring unit body is located on the insulating heat-conducting layer of the thermocouple;
  • Step 5 Prepare the required back cavity on the back side of the substrate, and one end of the thermocouple is located outside the back cavity to form the cold end of the Seebeck coefficient unit to be measured.
  • the preparation method comprises the following steps:
  • Step A providing a substrate and a substrate protection support layer arranged on the front side of the substrate;
  • Step B preparing thermocouple pairs and temperature measuring unit bodies adjacent to the thermocouple pairs on the above-mentioned substrate protection support layer, wherein the thermocouple pairs include a first thermocouple strip and a A second thermocouple strip for mating connection;
  • Step C prepare the required back cavity on the back side of the substrate, and the corresponding ends of the first thermocouple strip and the second thermocouple strip are located outside the back cavity to form the cold end of the Seebeck coefficient unit to be measured.
  • the heat-absorbing structure includes a heat-absorbing layer and/or a micro-nano structure.
  • the temperature measuring unit body and the Seebeck coefficient unit body to be measured are located directly above the back chamber, the temperature measuring unit body is adjacent to the Seebeck coefficient unit body to be measured, and one end of the Seebeck coefficient unit body to be measured is located at the back cavity Outside the cavity to form the cold end of the Seebeck coefficient unit to be measured;
  • the test heat source When using the test heat source to simultaneously perform the required thermal excitation on the temperature measuring unit body and the Seebeck coefficient unit body to be measured, according to the characteristics of the test heat source, it can be considered that the heat of the temperature measurement unit body and the Seebeck coefficient unit body to be measured are the same , so that the temperature difference ⁇ T measured by the temperature measuring unit body can be used to characterize the temperature difference of the Seebeck coefficient test unit body before and after thermal excitation, so as to measure the output of the Seebeck coefficient test unit body in the corresponding thermal excitation state After the voltage V, the Seebeck coefficient of the Seebeck coefficient unit to be measured can be directly determined, which can be adapted to various types of the Seebeck coefficient to be measured unit, that is, it can improve the convenience of Seebeck coefficient measurement and reduce the measurement cost.
  • Fig. 1 is the schematic diagram that the present invention measures the Seebeck coefficient of thermocouple.
  • Fig. 2 ⁇ Fig. 8 is the sectional view of the specific process steps of the measuring structure in Fig. 1 according to the present invention, wherein
  • Fig. 2 is a cross-sectional view of the prepared substrate protection support layer according to the present invention.
  • Fig. 3 is a cross-sectional view of a thermocouple prepared by the present invention.
  • Fig. 4 is a cross-sectional view of the thermocouple insulating and heat-conducting layer prepared in the present invention.
  • Fig. 5 is a cross-sectional view of the thermocouple lead-out hole prepared by the present invention.
  • Fig. 6 is a cross-sectional view of the temperature measuring unit body prepared in the present invention.
  • Fig. 7 is a cross-sectional view of the thermocouple heat absorbing structure prepared in the present invention.
  • Fig. 8 is a schematic diagram of the back chamber prepared by the present invention.
  • Fig. 9 is a schematic diagram of measuring thermocouple-to-Seebeck coefficient according to the present invention.
  • FIGs 10 to 18 are cross-sectional views of the specific preparation process steps of the measurement structure in Figure 9, wherein
  • Fig. 10 is a cross-sectional view of the prepared substrate protection support layer according to the present invention.
  • Fig. 11 is a cross-sectional view of the first thermocouple strip prepared in the present invention.
  • Fig. 12 is a schematic diagram of an insulating and heat-conducting layer between thermocouple bars prepared by the present invention.
  • Fig. 13 is a cross-sectional view of the second thermocouple strip prepared in the present invention.
  • Fig. 14 is a schematic diagram of an insulating and heat-conducting layer on a thermocouple pair prepared in the present invention.
  • Fig. 15 is a schematic diagram of the thermocouple pair lead-out connection hole prepared in the present invention.
  • Fig. 16 is a schematic diagram of the temperature measuring unit body prepared in the present invention.
  • Fig. 17 is a cross-sectional view of a thermocouple pair heat absorbing structure prepared in the present invention.
  • Fig. 18 is a schematic diagram of the back cavity prepared by the present invention.
  • thermocouple 2-the first electrode of the thermocouple, 3-the second electrode of the thermocouple, 4-the temperature measuring unit body, 5-the first electrode leading out of the temperature measuring unit body, 6-the temperature measuring unit body Lead out the second electrode, 7-substrate, 8-substrate protective support layer, 9-thermocouple insulation and heat conduction layer, 10-thermocouple lead-out hole, 11-thermocouple heat absorption structure, 12-thermocouple temperature measurement unit protection Filling body, 13-back cavity, 14-first thermocouple strip, 15-second thermocouple strip, 16-thermocouple pair first electrode, 17-thermocouple pair second electrode, 18-thermocouple strip connector, 19-insulation and heat conduction layer between thermocouple strips, 20-insulation and heat conduction layer on thermocouple pair, 21-first connection hole of thermocouple pair, 22-second connection hole of thermocouple pair and 23-third connection hole of thermocouple pair, 24-thermocouples protect the filling body of the temperature
  • the present invention includes a substrate 7 and a Seebeck coefficient unit body to be measured which is arranged on the front surface of the substrate 7, and also includes a temperature measuring unit body 4 prepared on the front surface of the substrate 7 and a set The back chamber 13 on the back side of the substrate 7, wherein the temperature measuring unit body 4 and the Seebeck coefficient unit body to be measured are all located directly above the back chamber 13, and the temperature measuring unit body 4 is adjacent to the Seebeck coefficient unit body to be measured, and plugged One end of the Beck coefficient unit body to be measured is located outside the back cavity 13 to form a cold end of the Seebeck coefficient unit body to be measured;
  • the substrate 7 may adopt an existing commonly used form, such as a silicon substrate, etc., which may be selected according to needs, and will not be repeated here.
  • the Seebeck coefficient unit to be measured is prepared above the substrate 7 by means of commonly used techniques in this technical field.
  • the specific conditions of the Seebeck coefficient to be measured unit are subject to the actual need to measure the Seebeck coefficient.
  • a temperature measuring unit body 4 is also arranged above the substrate 7, and the temperature measuring unit body 4 is generally arranged around the substrate 7, that is, adjacent to the unit body to be measured for the Seebeck coefficient.
  • a back chamber 13 is also provided on the back side of the substrate 1, wherein the temperature measuring unit body 4 corresponds to the back chamber 13, and for the Seebeck coefficient unit body to be measured, the Seebeck coefficient is to be One end of the measuring unit body needs to be located outside the back cavity 13 to form a cold end of the Seebeck coefficient unit body to be tested, so as to meet the test conditions of the Seebeck coefficient.
  • one end of the Seebeck coefficient test unit body located in the back cavity 13 forms the hot end of the Seebeck coefficient test unit body.
  • test heat source when measuring the Seebeck coefficient of the Seebeck coefficient unit body to be measured, it is necessary to use the test heat source to simultaneously perform the required thermal excitation on the temperature measurement unit body 4 and the Seebeck coefficient unit body to be measured, wherein the test heat source It can be a black body or laser and other equipment that can have a temperature difference with the ambient temperature.
  • the size of the test heat source is generally at the cm level or above.
  • the plug The Beck coefficient unit body to be measured is uniformly heated, and the temperature measurement unit body 4 is located directly above the back cavity 13, it can be considered that the temperature measurement unit body 4 and the Seebeck coefficient unit body to be measured are heated the same, so that the temperature measurement unit body 4 can be considered to be the same as the Seebeck coefficient unit body to be measured, so that The test temperature difference ⁇ T measured by the temperature unit body 4 represents the Seebeck coefficient temperature difference before and after thermal excitation of the unit body to be tested.
  • the output voltage V of the Seebeck coefficient unit to be measured in the corresponding thermal excitation state can be measured directly and conveniently by using the commonly used technical means in the technical field.
  • the temperature measurement unit 4 can be used to measure The test temperature difference ⁇ T before and after the thermal excitation of the unit body to be measured is characterized by the Seebeck coefficient. Therefore, according to the definition of the Seebeck coefficient, the Seebeck coefficient ⁇ of the unit body to be measured can be directly obtained as Specifically, the temperature measuring unit body 4 can be prepared around or adjacent to the Seebeck coefficient unit body to be measured by using the existing technology. When measuring the Seebeck coefficient, it can be adapted to various Seebeck coefficient The type of unit body to be measured can improve the convenience of Seebeck coefficient measurement and reduce the measurement cost.
  • the test temperature difference ⁇ T is
  • R 1 is the resistance value of the temperature measuring unit body 4 after being heated and excited
  • R 2 is the resistance value of the temperature measuring unit body 4 before being heated and excited
  • ⁇ is the temperature coefficient of resistance of the temperature measuring unit body 4 .
  • the temperature measuring unit body 4 may be a thermistor, of course, other forms may also be used.
  • the temperature measuring unit body 4 is a thermistor, according to the characteristics of the thermistor, in order to obtain the test temperature difference ⁇ T, the resistance value of the temperature measuring unit body 4 before and after being excited by the test heat source can be directly measured.
  • the temperature measuring unit body 4 is of other types, the specific situation of obtaining the test temperature difference ⁇ T is related to the type of the temperature measuring unit body 4 , which is well known to those skilled in the art and will not be repeated here.
  • the temperature coefficient of resistance ⁇ of the temperature measuring unit body 4 is related to the material used in the temperature measuring unit body 4, the technical means commonly used in this technical field can be used to determine the temperature coefficient of resistance ⁇ of the temperature measuring unit body 4, specifically determine the temperature measuring unit body 4
  • the method and process of the temperature coefficient of resistance ⁇ can be selected according to needs, which are well known to those skilled in the art, and will not be repeated here.
  • the heat absorbing structure for enhancing heat absorption, the heat absorbing structure is located above the substrate 7, and the heat absorbing structure is in contact with the temperature measuring unit body 4 and the hot end of the Seebeck coefficient unit to be measured .
  • the heat-absorbing structure includes a heat-absorbing layer and/or a micro-nano structure.
  • the heat-absorbing structure adopts a heat-absorbing layer or a micro-nano structure
  • the heat-absorbing structure directly covers the temperature measuring unit body 4, and is in contact with the hot end of the Seebeck coefficient unit to be measured; the micro-nano structure can adopt an existing There are commonly used forms, which can be selected according to actual needs, and will not be repeated here.
  • the micro-nano structure is disposed on the heat-absorbing layer.
  • the heat absorbing layer can be made of commonly used materials, such as silicon nitride, etc.
  • the micro-nano structure can be prepared by using commonly used processes, which are well known to those skilled in the art and will not be repeated here.
  • the Seebeck coefficient unit to be measured includes a thermocouple 1 or a pair of thermocouples.
  • the thermocouple 1 is made of any thermoelectric material, such as N-type doped polysilicon or P-type doped polysilicon; a pair of thermocouples is generally formed by two thermocouple strips, and the specific conditions are consistent with the existing ones. are well known to those skilled in the art.
  • Fig. 1 shows the situation that the Seebeck coefficient unit body to be measured is a thermocouple 1.
  • a thermocouple first electrode 2 and a thermocouple second electrode 3 are also arranged at both ends of the thermocouple 1.
  • the first electrode 2 of the thermocouple and the second electrode 3 of the thermocouple are respectively electrically connected to the two ends of the thermocouple 1.
  • the voltage V is convenient to measure the output of the thermocouple 1 after receiving thermal excitation.
  • the voltage V The voltage V.
  • the two ends of the temperature measuring unit body 4 are provided with the temperature measuring unit body drawing electrodes 5, and the first electrode 5 drawn from the temperature measuring unit body and the second electrode 6 drawn out of the temperature measuring unit body can be conveniently obtained through The test temperature difference ⁇ T obtained by the temperature measuring unit body 4 .
  • FIG. 9 shows the case where the Seebeck coefficient unit to be measured is a pair of thermocouples, wherein a pair of thermocouples includes a first thermocouple strip 14 and a second thermocouple strip 15 .
  • the first end of the first thermocouple strip 14 is electrically connected to the first end of the second thermocouple strip 15 through the thermocouple strip connector 18, and a thermocouple pair of second electrodes 17 is arranged at the second end of the first thermocouple strip 14 , the second end of the second thermocouple bar 15 is provided with a thermocouple pair first electrode 16, that is, the thermocouple pair can be drawn out respectively by the thermocouple pair first electrode 16 and the thermocouple pair second electrode 17.
  • the output voltage V can be measured by the thermocouple paired with the first electrode 16 and the thermocouple paired with the second electrode 17 .
  • the specific conditions of the temperature measuring unit body 4 may be consistent with those in FIG. 1 .
  • the Seebeck coefficient unit to be measured is in other cases, details can be referred to FIG. 1 , FIG. 9 and the corresponding descriptions, which will not be repeated here.
  • thermopile infrared sensor that is, when the thermopile infrared sensor is prepared, the temperature measurement unit body 4 and the Seebeck coefficient unit body 4 to be measured can be prepared at the same time. unit body.
  • thermopile infrared sensor includes several pairs of thermocouples, and the thermocouple strips in the plurality of thermocouples are connected in series in order to realize infrared sensing.
  • thermocouple 1 or a pair of thermocouples When the Seebeck coefficient unit to be measured is a thermocouple 1 or a pair of thermocouples, the thermocouple 1 or a pair of thermocouples can be prepared by the same process as multiple thermocouples in the thermopile infrared detector. When a thermocouple 1 or a pair of thermocouples is prepared with the same material and process as the thermopile infrared detector, the measurement of the Seebeck coefficient of the thermocouple 1 or a pair of thermocouples can be used to characterize the thermopile infrared detector The inner corresponding thermocouple 1 or the Seebeck coefficient of the corresponding thermocouple.
  • the temperature measuring unit body 4 and the Seebeck unit body to be tested must ensure that the specific working process of the thermopile infrared detector is not affected, that is, it is necessary to ensure that one end of the Seebeck coefficient unit body to be measured is connected to the back cavity 13 Correspondingly forming a hot end without affecting the thermocouple in the thermopile infrared detector; of course, the temperature measuring unit body 4 is still adjacent to the Seebeck coefficient unit body to be measured.
  • a method for preparing a Seebeck coefficient measurement structure can be obtained. Specifically, a substrate 7 is provided, and a Seebeck coefficient unit body to be measured and a Seebeck coefficient adjacent to the Seebeck coefficient are prepared above the front surface of the substrate 7.
  • the temperature measuring unit body of the unit body to be measured is prepared with a back cavity 13 on the back side of the substrate 7, the temperature measuring unit body 4 and the Seebeck coefficient unit body to be measured are all located directly above the back cavity 13, and the Seebeck coefficient unit to be measured One end of the body is located outside the back chamber 13 to form the cold end of the Seebeck coefficient unit body to be measured.
  • the Seebeck coefficient unit body to be measured includes a thermocouple 1 or a pair of thermocouples, and also includes a heat absorption structure for improving the heat absorption efficiency of the temperature measurement unit body 4, and the heat absorption structure Located above the front surface of the substrate 7 and the heat absorbing layer is in contact with the temperature measuring unit body 4 .
  • thermocouple 1 when the Seebeck coefficient unit body to be measured is a thermocouple 1, the preparation method includes the following steps:
  • Step 1 providing a substrate 7 and a substrate protection support layer 8 disposed on the front surface of the substrate 7, and preparing a thermocouple 1 on the substrate protection support layer 8;
  • the material of the substrate 7 can be single crystal silicon, polycrystalline silicon or SOI sheet; the material of the substrate protection support layer 8 can be a film with good thermal insulation properties such as silicon oxide, silicon oxide, silicon nitride or silicon oxygen nitrogen. Stacked structure, the thickness is 1000A-10000A.
  • the substrate protection support layer 8 can be prepared on the front surface of the substrate 7 by means of thermal oxidation, chemical vapor deposition, etc., as shown in FIG. 2 .
  • the material of the thermocouple 1 is any thermoelectric material, including but not limited to N-type/P-type doped polysilicon, N-type/P-type doped silicon (Si), N-type/P-type doped germanium silicon or metal materials, the Metal materials such as bismuth (Bi), antimony (Sb), chromium (Cr), iron (Fe), molybdenum (Mo), gold (Au), copper (Cu), indium (In), silver (Ag), tungsten ( W), lead (Pb), aluminum (Al), platinum (Pt), palladium (Pd), nickel (Ni), cobalt (Co), and the like.
  • the material of the thermocouple 1 can be prepared on the substrate protection support layer 8 by using commonly used technical means in this technical field, as shown in FIG. 3 , and the specific preparation process is well known to those skilled in the art, and will not be repeated here.
  • Step 2 preparing a thermocouple insulating and heat-conducting layer 9 above the substrate 7, the thermocouple insulating and heat-conducting layer 9 covering the thermocouple 1 and supported on the substrate protection support layer 8;
  • the material of the thermocouple insulating and heat-conducting layer 9 can be silicon oxide or silicon nitride or silicon oxynitride, or its composite insulating layer structure, with a thickness of 1000A-10000A, and the thermocouple insulating and heat-conducting layer 9 is prepared by a deposition method, wherein, The deposition method may be thermal oxidation, chemical vapor deposition, and the like. After the thermocouple insulating and heat-conducting layer 9 is prepared, the thermocouple insulating and heat-conducting layer 9 covers the thermocouple 1 and is supported on the substrate protection support layer 8 , as shown in FIG. 4 .
  • Step 3 selectively masking and etching the thermocouple insulation and heat conduction layer 9 to prepare a thermocouple lead-out hole 10 penetrating through the thermocouple insulation and heat conduction layer 9, and through the thermocouple lead-out hole 10 to expose the end of the thermocouple 1 ;
  • thermocouple insulating and heat-conducting layer 9 is etched by the technical means commonly used in this technical field, so as to obtain two thermocouple lead-out holes 10, and the ends of the thermocouple 1 can be exposed through the thermocouple lead-out holes 10, as Figure 5 shows.
  • thermocouple electrodes electrically connected to the thermocouple 1 and the temperature measuring unit body 4 adjacent to the thermocouple 1, wherein the thermocouple electrodes include thermocouple first electrodes 2 respectively filled in the thermocouple lead-out holes 10 And the thermocouple second electrode 3, the thermocouple first electrode body 2, and the thermocouple second electrode 3 are respectively electrically connected to the corresponding ends of the thermocouple 1, and the temperature measuring unit body 4 is located on the thermocouple insulating heat conducting layer 9;
  • thermocouple electrode 2 and the second thermocouple electrode 3 are prepared by adopting the technology commonly used in this technical field, wherein the first thermocouple electrode 2 and the second thermocouple electrode 3 are filled in the thermocouple lead-out hole 10 In order to form the connection state with the thermocouple 1 shown in Figure 1.
  • the first thermocouple electrode 2 and the second thermocouple electrode 3 can be formed in the same process step as the temperature measurement unit body 4. At this time, the first thermocouple electrode 2 and the second thermocouple second electrode 3 need to be formed with the temperature measurement unit Body 4 is compatible with metal materials, and the specific material type can be selected according to needs.
  • the two ends of the temperature measuring unit body 4 have the first electrode 5 drawn from the temperature measuring unit body and the second electrode 6 drawn out of the temperature measuring unit body. Since the thermocouple 2 is covered by the thermocouple insulation and heat conduction layer 9, the temperature measuring unit body 4 is connected to the thermocouple. on the insulating heat conducting layer 9 and adjacent to the thermocouple 1, as shown in FIG. 6 .
  • thermocouple heat absorbing structure 11 When it is necessary to improve the heat absorption efficiency of the temperature measuring unit body 4, after the temperature measuring unit body 4 is prepared, it is also necessary to prepare a heat absorbing structure, and the heat absorbing structure shown in FIG. 7 is a thermocouple heat absorbing structure 11 , the thermocouple heat absorbing structure 11 is a planar layer, and the thermocouple heat absorbing structure 11 can be made of silicon nitride, carbon, graphene and other materials, and the specific material type can be selected according to needs, and will not be repeated here.
  • thermocouple temperature measurement unit protection filling body 12 can Surrounding the temperature measurement unit body 4, the thermocouple temperature measurement unit protection filling body 12 can be made of existing commonly used dielectric materials, and the thermocouple temperature measurement unit protection filling body 12 is filled in the outer ring of the temperature measurement unit body 4, so as to It is convenient to support the thermocouple heat absorbing structure 11 .
  • Step 5 prepare the required back cavity 13 on the back of the substrate 7, and one end of the thermocouple 1 is located outside the back cavity 13 to form the cold end of the Seebeck coefficient unit to be measured.
  • the back side of the substrate 7 is etched to obtain a back cavity 13, the back cavity 13 penetrates the substrate 7, that is, the substrate 7 is etched to the substrate protection support layer 8, and the substrate 7 is specifically etched.
  • the process conditions and processes for etching the back cavity 13 can be selected according to actual needs, which are well known to those skilled in the art, and will not be repeated here.
  • the back cavity 13 is obtained by etching, it is necessary to make the end of the thermocouple 1 away from the temperature measurement unit body 4 outside the back cavity 13 to form a cold end of the thermocouple 1 .
  • thermocouple 1 when integrated with the thermopile infrared sensor, the above-mentioned process needs to be compatible with the specific process of the thermopile infrared sensor.
  • the preparation method and process of the thermocouple 1 can be compared with that of the corresponding thermocouple in the existing thermopile infrared sensor.
  • the preparation is formed by the same process steps, and the specific process can be selected according to actual needs, subject to the fact that the prepared thermocouple 1 does not affect the specific structure and function of the thermopile infrared sensor, which is well known to those skilled in the art, and will not be repeated here. .
  • the preparation method includes the following steps:
  • Step A providing a substrate 7 and a substrate protection support layer 8 disposed on the front surface of the substrate 7;
  • the specific conditions of the substrate 7 and the substrate protection support layer 8 are consistent with the above, and reference can be made to the above description, which will not be repeated here.
  • Step B preparing a pair of thermocouples and the temperature measuring unit body 4 adjacent to the pair of thermocouples on the above-mentioned substrate protection support layer 8, wherein the pair of thermocouples includes a first thermocouple strip 14 and the first The second thermocouple strip 15 to which the thermocouple strip 14 is adapted to connect;
  • thermocouple pair includes a first thermocouple strip 14 and a second thermocouple strip 15, the first thermocouple strip 14 and the second thermocouple strip 15 are connected in series, when the first thermocouple strip 14 and the second thermocouple strip 14
  • the specific process includes:
  • the first thermocouple strip 14 is arranged on the substrate protection support layer 8, as shown in FIG. 11 , the specific process and method of preparing the first thermocouple strip 14 are well known to those skilled in the art, and will not be repeated here.
  • thermocouple insulating and heat-conducting layer 19 between the thermocouple strips is prepared by the technical means commonly used in this technical field, and the insulating and heat-conducting layer 19 between the thermocouple strips is covered on the first thermocouple strip 14 and supported on the substrate protection support
  • layer 8 for details, refer to the description of the upper thermocouple insulating and heat-conducting layer 9, which will not be repeated here.
  • the second thermocouple strip 15 is prepared by the technical means commonly used in this technical field, the second thermocouple strip 15 is positioned at the top of the first thermocouple strip 14, and the second thermocouple strip 15 is supported on the thermocouple strip on the insulating and heat-conducting layer 19.
  • the upper insulating and heat-conducting layer 20 of the thermocouple pair is prepared by adopting the technical means commonly used in this technical field, and the upper insulating and heat-conducting layer 20 of the thermocouple pair is coated with the second thermocouple strip 15, and the rest is covered between the thermocouple strips
  • the insulating and heat-conducting layer 20 on the thermocouple pair, and the insulating and heat-conducting layer 19 between the thermocouple strips can be made of the same material, and the specific process can be selected according to the needs, and will not be repeated here.
  • thermocouple As shown in Figure 15, adopt the commonly used etching technique in this technical field, etch the insulating and heat-conducting layer 20 on the thermocouple pair and the insulating and heat-conducting layer 19 between the thermocouple strips, so as to obtain the first connecting hole 21,
  • the thermocouple is paired with the second connection hole 22 and the thermocouple is connected with the third connection hole 23 .
  • metal deposition is performed to obtain the first connection hole 23 of the thermocouple pair.
  • thermocouple pair second electrode 17 thermocouple strip connection body 17 wherein, thermocouple pair first deposition 16 fills in thermocouple pair second connection hole 22, thermocouple pair second electrode 17 fills in thermal couple pair
  • thermocouple strip connecting body 18 is filled in the first connecting hole 21 of the thermocouple pair, the thermocouple pair first electrode 16, the thermocouple pair second electrode 17, the thermocouple strip connecting body 18 and the first thermocouple pair
  • the specific cooperation relationship between the first thermocouple strip 14 and the second thermocouple strip 15 can be described with reference to FIG. 9 , and will not be repeated here.
  • thermocouple pair electrodes 16 are formed by the same process steps, which are determined by materials and other processes, which are well known to those skilled in the art and will not be repeated here.
  • thermocouple pair temperature measuring unit protection filling body 24 and a thermocouple pair heat absorption structure body 25 are specifically designed.
  • thermocouple pair temperature measurement unit protection filling body 24 and the thermocouple pair heat absorption structure body 25 are specifically designed.
  • Step C prepare the required back cavity 13 on the back side of the substrate 7, and the corresponding ends of the first thermocouple strip 14 and the second thermocouple strip 15 are located outside the back cavity 13 to form the cold chamber of the Seebeck coefficient unit body to be measured. end.
  • the back cavity 13 is prepared by using commonly used technical means in this technical field, the back cavity 13 penetrates the substrate 7, and the corresponding ends of the first thermocouple strip 14 and the second thermocouple strip 15 are located outside the back cavity 13 to form
  • the specific process of preparing the back cavity 13 can refer to the above description, and will not be repeated here.
  • thermocouples formed by the first thermopile strip 14 and the second thermopile strip 15 are prepared.
  • the method and process can be formed by using the same process steps as the preparation of the thermocouple pair in the existing thermopile infrared detector.
  • the specific process can be selected according to actual needs, so as to prepare a pair of thermocouples without affecting the specific structure and structure of the thermopile infrared detector. The function shall prevail, and the details are well known to those skilled in the art, so details will not be repeated here.
  • the details can refer to the description of the above process steps, and the details can be determined according to the actual situation, and will not be listed here.

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Abstract

一种适用于热电堆的塞贝克系数测量结构及其制备方法，测量结构包括衬底（7）以及塞贝克系数待测单元体，还包括测温单元体（4）以及设置于衬底（7）背面的背腔（13）；测量时，利用测试热源对测温单元体（4）以及塞贝克系数待测单元体同时进行所需的热激发，通过测温单元体（4）测量得到表征塞贝克系数待测单元体热激发前后的测试温度差ΔT，测量塞贝克系数待测单元体在相应热激发状态下的输出电压V，则能确定塞贝克系数待测单元体的塞贝克系数。测量结构能有效实现塞贝克系数的测量，测量效率高，与现有工艺兼容，安全可靠。

Description

适用于热电堆的塞贝克系数测量结构及其制备方法 技术领域
本发明涉及一种塞贝克系数测量结构及其制备方法，尤其是一种适用于热电堆的塞贝克系数测量结构及其制备方法。
背景技术
塞贝克系数是热电材料的固有性质，是体现热电材料性能的参数，对于基于热电材料制备而成的热电堆器件，塞贝克系数的大小将直接决定热电堆器件的性能。展开对塞贝克系数的测量有助于进一步分析热电堆红外传感器的热电转换效率分析和器件性能分析，但在实际应用过程中，一方面材料的参数会受加工工艺过程的影响发生变化，真实塞贝克系数难以确定；另一方面，微纳结构的塞贝克系数对测试系统的精度和复杂度都提出了高要求，这使得实际塞贝克系数的测量变得困难。
目前，塞贝克系数的测试方法或仪器比较复杂，有的对于测试样品的类别和大小有限制，例如只能测薄膜结构的塞贝克系数或者只能测量多晶硅材料的塞贝克系数；有的测试仪器需要冷却液装置和真空装置等，增加了测试系统的复杂度。特别是微纳尺度下塞贝克系数的测量，难以精确测量电压输出和温度，现有的测试方法往往误差较大，这也将进一步限制微纳尺度下的热电转换效率分析和红外热电堆传感器的器件性能分析。
发明内容
本发明的目的是克服现有技术中存在的不足，提供一种适用于热电堆的塞贝克系数测量结构及其制备方法，其能有效实现塞贝克系数的测量，测量效率高，与现有工艺兼容，安全可靠，并且可与对应热电偶器件集成，准确评估热电堆器件性能。
按照本发明提供的技术方案，所述塞贝克系数的测量结构，包括衬底以及设置于衬底正面上方的塞贝克系数待测单元体，还包括制备于衬底正面上方的测温单元体以及设置于衬底背面的背腔，其中，测温单元体以及塞贝克系数待测单元体均位于背腔的正上方，测温单元体邻近塞贝克系数待测单元体，且塞贝克系数待测单元体的一端位于背腔外以形成塞贝克系数待测单元体的冷端；
测量时，利用测试热源对所述测温单元体以及塞贝克系数待测单元体同时进行所需的热激发，通过测温单元体测量得到表征塞贝克系数待测单元体热激发前后的测试温度差ΔT，测量所述塞贝克系数待测单元体在相应热激发状态下的输出电压V，则所述塞贝克系数待测单元体的塞贝克系数α为
Figure PCTCN2022089119-appb-000001
所述测温单元体为热敏电阻时，测温单元体在受到测试热源激发时，测试温度差ΔT为
Figure PCTCN2022089119-appb-000002
其中，R 1为测温单元体受热激发后的电阻值，R 2 为测温单元体受热激发前的电阻值，ε为所述测温单元体的电阻温度系数。
所述测试热源包括黑体或激光，所述塞贝克系数待测单元体包括一根热电偶或一对热偶。
还包括用于增强热吸收的热吸收结构体，热吸收结构体位于衬底上方，且热吸收结构体与测温单元以及塞贝克系数待测单元的热端相接触。
所述热吸收结构体包括热吸收层和/或微纳米结构。
一种塞贝克系数的测量结构的制备方法，提供衬底，在所述衬底的正面上方制备有塞贝克系数待测单元体以及邻近所述塞贝克系数待测单元体的测温单元体，在衬底的背面制备有背腔，测温单元体以及塞贝克系数待测单元体均位于背腔的正上方，塞贝克系数待测单元体的一端位于背腔外以形成塞贝克系数待测单元体的冷端。
所述塞贝克系数待测单元体包括一根热电偶或一对热偶，还包括用于热吸收结构体，热吸收结构体位于衬底上方，且热吸收结构体与测温单元以及塞贝克系数待测单元的热端相接触。
所述塞贝克系数待测单元体为一热电偶时，所述制备方法包括如下步骤：
步骤1、提供衬底以及设置于所述衬底正面的衬底保护支撑层，将热电偶制备于衬底保护支撑层上；
步骤2、在上述衬底上方制备热电偶绝缘导热层，所述热电偶绝缘导热层覆盖在热电偶并支撑在所述衬底保护支撑层上；
步骤3、选择性地掩蔽和刻蚀热电偶绝缘导热层，以制备得贯通热电偶绝缘导热层的热电偶引出孔，通过热电偶引出孔以能使得热电偶的端部露出；
步骤4、制备与热电偶电连接的热电偶电极以及邻近所述热电偶的测温单元体，其中，热电偶电极包括分别填充于热电偶引出孔内的热电偶第一电极以及热电偶第二电极，热电偶第一电极体、热电偶第二电极分别与热电偶相应的端部电连接，测温单元体位于热电偶绝缘导热层上；
步骤5、在衬底的背面制备所需的背腔，热电偶的一端位于背腔外以形成塞贝克系数待测单元体的冷端。
所述塞贝克系数待测单元体为一对热偶时，所述制备方法包括如下步骤：
步骤A、提供衬底以及设置于所述衬底正面的衬底保护支撑层；
步骤B、在上述衬底保护支撑层上制备热偶对以及邻近所述热偶对的测温单元体，其中，所述热偶对包括第一热偶条以及与所述第一热偶条适配连接的第二热偶条；
步骤C、在衬底的背面制备所需的背腔，第一热偶条以及第二热偶条相应的端部位于背腔外以形成塞贝克系数待测单元体的冷端。
所述热吸收结构体包括热吸收层和/或微纳米结构。
本发明的优点：测温单元体以及塞贝克系数待测单元体均位于背腔的正上方，测温单元体邻近塞贝克系数待测单元体，且塞贝克系数待测单元体的 一端位于背腔外以形成塞贝克系数待测单元体的冷端；
在利用测试热源对测温单元体以及塞贝克系数待测单元体同时进行所需的热激发时，根据测试热源的特性，可认为测温单元体与塞贝克系数待测单元体的受热为相同的，从而可以利用测温单元体测量的测试温度差ΔT表征塞贝克系数待测单元体热激发前后的温度差，从而在测量所述塞贝克系数待测单元体在相应热激发状态下的输出电压V后，可以直接确定塞贝克系数待测单元体的塞贝克系数，可适应多种塞贝克系数待测单元体的类型，即能提高塞贝克系数的测量时的便捷性，降低测量成本。
附图说明
图1为本发明测量热电偶塞贝克系数的示意图。
图2～图8为本发明为图1中测量结构的具体工艺步骤剖视图，其中
图2为本发明制备得到衬底保护支撑层后的剖视图。
图3为本发明制备得到热电偶后的剖视图。
图4为本发明制备得到热电偶绝缘导热层后的剖视图。
图5为本发明制备得到热电偶引出孔后的剖视图。
图6为本发明制备得到测温单元体后的剖视图。
图7为本发明制备得到热电偶热吸收结构体后的剖视图。
图8为本发明制备得到背腔后的示意图。
图9为本发明测量热偶对塞贝克系数的示意图。
图10～图18为图9中测量结构的具体制备工艺步骤剖视图，其中
图10为本发明制备得到衬底保护支撑层后的剖视图。
图11为本发明制备得到第一热偶条后的剖视图。
图12为本发明制备得到热偶条间绝缘导热层后的示意图。
图13为本发明制备得到第二热偶条后的剖视图。
图14为本发明制备得到热偶对上绝缘导热层后的示意图。
图15为本发明制备得到热偶对引出连接孔后的示意图。
图16为本发明制备得到测温单元体后的示意图。
图17为本发明制备得到热偶对热吸收结构体后的剖视图。
图18为本发明制备得到背腔后的示意图。
附图标记说明：1-热电偶、2-热电偶第一电极、3-热电偶第二电极、4-测温单元体、5-测温单元体引出第一电极、6-测温单元体引出第二电极、7-衬底、8-衬底保护支撑层、9-热电偶绝缘导热层、10-热电偶引出孔、11-热电偶热吸收结构体、12-热电偶测温单元保护填充体、13-背腔、14-第一热偶条、15-第二热偶条、16-热偶对第一电极、17-热偶对第二电极、18-热偶条连接体、19-热偶条间绝缘导热层、20-热偶对上绝缘导热层、21-热偶对第一连接孔、22-热偶对第二连接孔以及23-热偶对第三连接孔、24-热偶对测温单元保护填充体、25-热电偶对热吸收结构体。
具体实施方式
下面结合具体附图和实施例对本发明作进一步说明。
为了能有效实现塞贝克系数的测量，本发明包括衬底7以及设置于衬底7正面上方的塞贝克系数待测单元体，还包括制备于衬底7正面上方的测温单元体4以及设置于衬底7背面的背腔13，其中，测温单元体4以及塞贝克系数待测单元体均位于背腔13的正上方，测温单元体4邻近塞贝克系数待测单元体，且塞贝克系数待测单元体的一端位于背腔13外以形成塞贝克系数待测单元体的冷端；
测量时，利用测试热源对所述测温单元体4以及塞贝克系数待测单元体同时进行所需的热激发，通过测温单元体4测量得到表征塞贝克系数待测单元体热激发前后的测试温度差ΔT，测量所述塞贝克系数待测单元体在相应热激发状态下的输出电压V，则所述塞贝克系数待测单元体的塞贝克系数α为
Figure PCTCN2022089119-appb-000003
具体地，衬底7具体可以采用现有常用的形式，如采用硅衬底等，具体可以根据需要选择，此处不再赘述。在衬底7上方采用本技术领域常用的技术手段制备塞贝克系数待测单元体，塞贝克系数待测单元体的具体情况以实际需要测量塞贝克系数的情况为准。
本发明实施例中，在衬底7上方还设置测温单元体4，测温单元体4一般设置在衬底7的周围，即邻近塞贝克系数待测单元体。为了能提高测量的准确性，在衬底1的背面还设置背腔13，其中，测温单元体4与背腔13正对应，而对于塞贝克系数待测单元体，所述塞贝克系数待测单元体的一端需要位于背腔13外，以形成塞贝克系数待测单元体的冷端，从而能满足塞贝克系数的测试条件。当然，塞贝克系数待测单元体位于背腔13内的一端形成塞贝克系数待测单元体的热端。
具体实施时，测量塞贝克系数待测单元体的塞贝克系数时，需要利用测试热源对所述测温单元体4以及塞贝克系数待测单元体同时进行所需的热激发，其中，测试热源可为黑体或者激光等可与环境温度有温差的设备，测试热源的尺寸一般为cm级或以上，由于塞贝克系数待测单元体以及测温单元体一般为μm级或mm级，因此，塞贝克系数待测单元体为均匀受热，且测温单元体4位于背腔13的正上方，即可认为测温单元体4与塞贝克系数待测单元体的受热为相同的，从而可以利用测温单元体4测量的测试温度差ΔT表征塞贝克系数待测单元体热激发前后的温度差。
本发明实施例中，利用本技术领域常用的技术手段能方便直接测量得到测量所述塞贝克系数待测单元体在相应热激发状态下的输出电压V，同时，利用测温单元体4能测量得到表征塞贝克系数待测单元体热激发前后的测试温度差ΔT，因此，可以根据塞贝克系数的定义，直接得到所述塞贝克系数待 测单元体的塞贝克系数α为
Figure PCTCN2022089119-appb-000004
具体地，测温单元体4可以采用现有工艺制备在塞贝克系数待测单元体的周围或邻近所述塞贝克系数待测单元体即可，在对塞贝克系数测量时，可适应多种塞贝克系数待测单元体的类型，即能提高塞贝克系数的测量时的便捷性，降低测量成本。
进一步地，所述测温单元体4为热敏电阻时，测温单元体4在受到测试热源激发时，测试温度差ΔT为
Figure PCTCN2022089119-appb-000005
其中，R 1为测温单元体4受热激发后的电阻值，R 2为温单元体4受热激发前的电阻值，ε为所述测温单元体4的电阻温度系数。
本发明实施例中，测温单元体4可以为热敏电阻，当然，也可以采用其他的形式。当测温单元体4为热敏电阻时，根据热敏电阻的特性可知，为了能得到测试温度差ΔT，可以直接测量测温单元体4在收到测试热源激发前后的电阻值即可。当测温单元体4为其他类型时，具体得到测试温度差ΔT的情况与测温单元体4所采用的类型相关，具体为本技术领域人员所熟知，此处不再赘述。测温单元体4的电阻温度系数ε与测温单元体4所采用的材料相关，可采用本技术领域常用的技术手段确定测温单元体4的电阻温度系数ε，具体确定测温单元体4的电阻温度系数ε的方式以及过程可根据需要选择，为本技术领域人员所熟知，此处不再赘述。
具体实施时，还包括用于增强热吸收的热吸收结构体，热吸收结构体位于衬底7上方，且热吸收结构体与测温单元体4以及塞贝克系数待测单元的热端相接触。
本发明实施例中，通过将热吸收结构体覆盖在测温单元体4以及塞贝克系数待测单元的热端，以提升热吸收效率，从而能提高通过测温单元体4测量得到测试温度差ΔT的可靠性。具体地，所述热吸收结构体包括热吸收层和/或微纳米结构。当热吸收结构体采用热吸收层或微纳米结构时，则热吸收结构体直接覆盖于测温单元体4上，并与塞贝克系数待测单元的热端相接触；微纳米结构可以采用现有常用的形式，可根据实际需要选择，此处不再赘述。当热吸收结构体同时包括热吸收层以及微纳米结构时，则微纳米结构设置于热吸收层上。热吸收层可以采用现有常用的材料制成，如采用氮化硅等，微纳米结构具体可以采用现有常用的工艺制备得到，具体为本技术领域人员所熟知，此处不再赘述。
进一步地，所述塞贝克系数待测单元体包括一热电偶1或一对热偶。具体地，热电偶1采用任意热电材料制成的材料，如N型掺杂多晶硅或P型掺杂多晶硅；一对热偶一般为由两个热偶条形成，具体情况与现有相一致，为本技术领域人员所熟知。
图1中示出了塞贝克系数待测单元体为热电偶1的情况，图1中，所述 热电偶1的两端还设置热电偶第一电极2以及热电偶第二电极3，利用热电偶第一电极2以及热电偶第二电极3分别与热电偶1的两端电连接，通过热电偶第一电极2以及热电偶第二电极3能方便测量热电偶1在收到热激发后输出的电压V。对于测温单元体4，所述测温单元体4的两端设置测温单元体引出电极5，利用测温单元体引出第一电极5和测温单元体引出第二电极6能方便获取通过测温单元体4得到的测试温度差ΔT。
图9中示出了塞贝克系数待测单元体为一对热偶的情况，其中，一对热偶包括第一热偶条14以及第二热偶条15。第一热偶条14的第一端通过热偶条连接体18与第二热偶条15的第一端电连接，在第一热偶条14的第二端设置热偶对第二电极17，在第二热偶条15的第二端设置热偶对第一电极16，即通过热偶对第一电极16以及热偶对第二电极17能分别将热偶对引出，在受到热激发后，通过热偶对第一电极16以及热偶对第二电极17能测量输出电压V。图9中，测温单元体4的具体情况可与图1中的情况相一致。当塞贝克系数待测单元体为其他情况是，具体可以参考图1、图9以及相应的说明，此处不再赘述。
具体实施时，上述的塞贝克系数待测单元体以及测温单元体4可以与热电堆红外传感器集成，即在制备热电堆红外传感器时，同时能制备测温单元体4以及塞贝克系数待测单元体。本技术领域周知，对于热电堆红外传感器，其包括若干对热偶，多个热偶内的热偶条依次串接，以能实现对红外的感应。塞贝克系数待测单元体为一根热电偶1或一对热偶时，热电偶1或一对热偶可与热电堆红外探测器内的多个热偶采用同一工艺制备得到。当一根热电偶1或一对热偶与热电堆红外探测器内采用相同材料以及工艺制备时，对热电偶1或一对热偶的塞贝克系数的测量，以能表征热电堆红外探测器内相应热电偶1或相应热偶的塞贝克系数。
此外，由上述说明可知，测温单元体4以及塞贝克待测单元体必须要保证不影响热电堆红外探测器的具体工作过程，即要保证塞贝克系数待测单元体的一端与背腔13对应形成热端，又不影响热电堆红外探测器内的热偶；当然，测温单元体4依然要邻近所述塞贝克系数待测单元体。
综上，可到一种塞贝克系数的测量结构的制备方法，具体地，提供衬底7，在所述衬底7的正面上方制备有塞贝克系数待测单元体以及邻近所述塞贝克系数待测单元体的测温单元体，在衬底7的背面制备有背腔13，测温单元体4以及塞贝克系数待测单元体均位于背腔13的正上方，塞贝克系数待测单元体的一端位于背腔13外以形成塞贝克系数待测单元体的冷端。
具体地，塞贝克系数待测单元体、测温单元体4、背腔13与衬底7的具体对应关系，可以参考上述说明，此处不再赘述。具体实施时，所述塞贝克系数待测单元体包括一根热电偶1或一对热偶，还包括用于提高测温单元体4热吸收效率的热吸收结构体，所述热吸收结构体位于衬底7正面的上方且所 述热吸收层与测温单元体4接触。
如图2～图8所示，当塞贝克系数待测单元体为一热电偶1时，所述制备方法包括如下步骤：
步骤1、提供衬底7以及设置于所述衬底7正面的衬底保护支撑层8，将热电偶1制备于衬底保护支撑层8上；
具体地，衬底7的材料可为单晶硅、多晶硅或SOI片；衬底保护支撑层8的材料可为氧化硅、氧化硅、氮化硅或者硅氧氮等具有良好热绝缘性的膜叠结构，厚度为1000A-10000A。衬底保护支撑层8可以采用热氧化、化学气相沉积等方式制备在衬底7的正面，如图2所示。
热电偶1的材料为任意热电材料，包括但不限于N型/P型掺杂多晶硅、N型/P型掺杂硅(Si)、N型/P型掺杂锗硅或者金属材料，所述金属材料如铋(Bi)、锑(Sb)、铬(Cr)、铁(Fe)、钼(Mo)、金(Au)、铜(Cu)、铟(In)、银(Ag)、钨(W)、铅(Pb)、铝(Al)、铂(Pt)、钯(Pd)、镍(Ni)、钴(Co)等。热电偶1的材料可以采用本技术领域常用的技术手段制备在衬底保护支撑层8上，如图3所示，具体制备工艺等为本技术领域人员所熟知，此处不再赘述。
步骤2、在上述衬底7上方制备热电偶绝缘导热层9，所述热电偶绝缘导热层9覆盖在热电偶1并支撑在所述衬底保护支撑层8上；
具体地，热电偶绝缘导热层9的材料可以为氧化硅或氮化硅或氮氧化硅，或其复合绝缘层结构，厚度为1000A-10000A，热电偶绝缘导热层9采用沉积方法制备，其中，沉积方法可以为热氧化、化学气相沉积等。制备得到热电偶绝缘导热层9后，所述热电偶绝缘导热层9覆盖在热电偶1并支撑在所述衬底保护支撑层8上，如图4所示。
步骤3、选择性地掩蔽和刻蚀热电偶绝缘导热层9，以制备得贯通热电偶绝缘导热层9的热电偶引出孔10，通过热电偶引出孔10以能使得热电偶1的端部露出；
具体地，采用本技术领域常用的技术手段对热电偶绝缘导热层9刻蚀，以能得到两个热电偶引出孔10，通过热电偶引出孔10以能使得热电偶1的端部露出，如图5所示。
步骤4、制备与热电偶1电连接的热电偶电极以及邻近所述热电偶1的测温单元体4，其中，热电偶电极包括分别填充于热电偶引出孔10内的热电偶第一电极2以及热电偶第二电极3热电偶第一电极体2、热电偶第二电极3分别与热电偶1相应的端部电连接，测温单元体4位于热电偶绝缘导热层9上；
具体地，采用本技术领域常用的技术后端制备得到热电偶第一电极2以及热电偶第二电极3，其中，热电偶第一电极2以及热电偶第二电极3填充在热电偶引出孔10内，以形成图1所示与热电偶1间的连接状态。
热电偶第一电极2以及热电偶第二电极3可以与测温单元体4采用同一 工艺步骤形成，此时，热电偶第一电极2以及第二热电偶第二电极3需要采用与测温单元体4兼容的金属材料，具体材料类型可以根据需要选择。测温单元体4的两端具有测温单元体引出第一电极5和测温单元体引出第二电极6，由于热电偶2被热电偶绝缘导热层9包覆，测温单元体4在热电偶绝缘导热层9上，并邻近所述热电偶1，如图6所示。
当需要提高测温单元体4的热吸收效率时，在制备得到测温单元体4后，还需要制备热吸收结构体，图7中示出了热吸收结构体为热电偶热吸收结构体11，所述热电偶热吸收结构体11呈平面层，热电偶热吸收结构体11可采用氮化硅、碳、石墨烯等材料制成，具体材料类型可以根据需要选择，此处不再赘述。当然，为了确保热电偶热吸收结构体11的可靠性，在制备热电偶热吸收结构体11前，还需要制备热电偶测温单元保护填充体12，利用热电偶测温单元保护填充体12能将测温单元体4包围，热电偶测温单元保护填充体12可以采用现有常用的介质材料制成，通过热电偶测温单元保护填充体12填充在测温单元体4的外圈，以方便能对热电偶热吸收结构体11的支撑。
步骤5、在衬底7的背面制备所需的背腔13，热电偶1的一端位于背腔13外以形成塞贝克系数待测单元体的冷端。
具体地，对衬底7的背面进行刻蚀，以能得到背腔13，背腔13贯通衬底7，即对衬底7的刻蚀到衬底保护支撑层8为止，具体对衬底7刻蚀得到背腔13的工艺条件以及过程等可以根据实际需要选择，为本技术领域人员所熟知，此处不再赘述。在刻蚀得到背腔13时，需要使得热电偶1远离测温单元体4的一端位于背腔13外，以形成热电偶1的冷端。
具体实施时，当与热电堆红外传感器集成时，上述工艺需要与热电堆红外传感器的具体工艺兼容，当然，热电偶1的具备制备方式以及过程可以与现有热电堆红外传感器内对应热电偶的制备采用同一工艺步骤形成，具体工艺过程可以根据实际需要选择，以制备得到热电偶1不影响热电堆红外传感器的具体结构以及功能为准，具体为本技术领域人员所熟知，此处不再赘述。
如图10～图18所示，当塞贝克系数待测单元体为一对热偶时，具所述制备方法包括如下步骤：
步骤A、提供衬底7以及设置于所述衬底7正面的衬底保护支撑层8；
如图10所示，衬底7以及衬底保护支撑层8的具体情况与上述相一致，可以参考上述说明，此处不再赘述。
步骤B、在上述衬底保护支撑层8上制备热偶对以及邻近所述热偶对的测温单元体4，其中，所述热偶对包括第一热偶条14以及与所述第一热偶条14适配连接的第二热偶条15；
由上述说明可知，热偶对包括第一热偶条14以及第二热偶条15，第一热偶条14与第二热偶条15串接，当第一热偶条14与第二热偶条15采用上下分布的形式时，具体工艺过程包括：
在衬底保护支撑层8上设置第一热偶条14，如图11所示，具体制备第一热偶条14的过程以及方式均为本技术领域人员所熟知，此处不再赘述。
如图12所示，采用本技术领域常用的技术手段制备热偶条间绝缘导热层19，所述热偶条间绝缘导热层19覆盖在第一热偶条14上且支撑在衬底保护支撑层8上，具体可以参考上热电偶绝缘导热层9的说明，此处不再赘述。
如图13所示，采用本技术领域常用的技术手段制备第二热偶条15，第二热偶条15位于第一热偶条14的正上方，第二热偶条15支撑在热偶条间绝缘导热层19上。
如图14所示，采用本技术领域常用的技术手段制备得到热偶对上绝缘导热层20，热偶对上绝缘导热层20包覆第二热偶条15，其余部分覆盖在热偶条间绝缘导热层19上，热偶对上绝缘导热层20、热偶条间绝缘导热层19可以采用相同的材料制成，具体工艺过程等可以根据需要选择，此处不再赘述。
如图15所示，采用本技术领域常用的刻蚀技术，对热偶对上绝缘导热层20、热偶条间绝缘导热层19进行刻蚀，以能得到热偶对第一连接孔21、热偶对第二连接孔22以及热偶对第三连接孔23。如图16所示，在制备得到热偶对第一连接孔21、热偶对第二连接孔22以及热偶对第三连接孔23后，进行金属淀积，以能得到热偶对第一电极16、热偶对第二电极17、热偶条连接体17，其中，热偶对第一淀积16填充在热偶对第二连接孔22内，热偶对第二电极17填充在热偶对第三连接孔23内，热偶条连接体18填充在热偶对第一连接孔21，热偶对第一电极16、热偶对第二电极17、热偶条连接体18与第一热偶条14、第二热偶条15间的具体配合关系可以参考图9说明，此处不再赘述。
此外，在热偶对上绝缘导热层19上还制备得到测温单元体4，测温单元体4位于第一热偶条14、第二热偶条15的外侧，测温单元体4可以与热偶对第一电极16、热偶对第二电极17、热偶条连接体17采用同一工艺步骤形成，具体通过材料等工艺确定，为本技术领域人员所熟知，此处不再赘述。
如图17所示，还可以制备热偶对测温单元保护填充体24以及热偶对热吸收结构体25，热偶对测温单元保护填充体24、热偶对热吸收结构体25的具体情况可以参考上述热电偶测温单元保护填充体12、热电偶热吸收结构体11的具体说明，此处不再赘述。
步骤C、在衬底7的背面制备所需的背腔13，第一热偶条14以及第二热偶条15相应的端部位于背腔13外以形成塞贝克系数待测单元体的冷端。
具体地，采用本技术领域常用的技术手段制备得到背腔13，背腔13贯通衬底7，第一热偶条14以及第二热偶条15相应的端部位于背腔13外，以形成热偶对的冷端，具体制备背腔13的工艺情况可以参考上述说明，此处不再赘述。
具体实施时，当与热电堆红外传感器集成时，上述工艺需要与热电堆红 外传感器的具体工艺兼容，当然，由第一热偶条14以及第二热偶条15形成的一对热偶具备制备方式以及过程可以与现有热电堆红外探测器内热偶对的制备采用同一工艺步骤形成，具体工艺过程可以根据实际需要选择，以制备得到一对热偶不影响热电堆红外探测器的具体结构以及功能为准，具体为本技术领域人员所熟知，此处不再赘述。
当塞贝克系数待测单元体采用其他的情况时，具体可以参考上述工艺步骤说明，具体可以根据实际情况确定，此处不再一一列举说明。

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  1. 一种适用于热电堆的塞贝克系数测量结构，包括衬底(7)以及设置于衬底(7)正面上方的塞贝克系数待测单元体，其特征是：还包括制备于衬底(7)正面上方的测温单元体(4)以及设置于衬底(7)背面的背腔(13)，其中，测温单元体(4)以及塞贝克系数待测单元体均位于背腔(13)的正上方，测温单元体(4)邻近塞贝克系数待测单元体，且塞贝克系数待测单元体的一端位于背腔(13)外以形成塞贝克系数待测单元体的冷端；
    测量时，利用测试热源对所述测温单元体(4)以及塞贝克系数待测单元体同时进行所需的热激发，通过测温单元体(4)测量得到表征塞贝克系数待测单元体热激发前后的测试温度差ΔT，测量所述塞贝克系数待测单元体在相应热激发状态下的输出电压V，则所述塞贝克系数待测单元体的塞贝克系数α为
    Figure PCTCN2022089119-appb-100001
  2. 根据权利要求1所述的适用于热电堆的塞贝克系数测量结构，其特征是：所述测温单元体(4)为热敏电阻时，测温单元体(4)在受到测试热源激发时，测试温度差ΔT为
    Figure PCTCN2022089119-appb-100002
    其中，R 1为测温单元体(4)受热激发后的电阻值，R 2为测温单元体(4)受热激发前的电阻值，ε为所述测温单元体(4)的电阻温度系数。
  3. 根据权利要求1或2所述的适用于热电堆的塞贝克系数测量结构，其特征是：所述测试热源包括黑体或激光，所述塞贝克系数待测单元体包括一根热电偶(1)或一对热偶。
  4. 根据权利要求2所述适用于热电堆的塞贝克系数的测量结构，其特征是：还包括用于增强热吸收的热吸收结构体，热吸收结构体位于衬底(7)上方，且热吸收结构体与测温单元(4)以及塞贝克系数待测单元的热端相接触。
  5. 根据权利要求4所述的适用于热电堆的塞贝克系数测量结构，其特征是：所述热吸收结构体包括热吸收层和/或微纳米结构。
  6. 一种适用于热电堆的塞贝克系数测量结构的制备方法，其特征是：提供衬底(7)，在所述衬底(7)的正面上方制备有塞贝克系数待测单元体以及邻近所述塞贝克系数待测单元体的测温单元体，在衬底(7)的背面制备有背腔(13)，测温单元体(4)以及塞贝克系数待测单元体均位于背腔(13)的正上方，塞贝克系数待测单元体的一端位于背腔(13)外以形成塞贝克系数待测单元体的冷端。
  7. 根据权利要求6所述适用于热电堆的塞贝克系数测量结构的制备方法，其特征是：所述塞贝克系数待测单元体包括一根热电偶(1)或一对热偶，还包括用于热吸收结构体，热吸收结构体位于衬底(7)上方，且热吸收结构体与测温单元(4)以及塞贝克系数待测单元的热端相接触。
  8. 根据权利要求7所述的适用于热电堆的塞贝克系数测量结构的制备方法，其特征是：所述塞贝克系数待测单元体为一热电偶(1)时，所述制备方 法包括如下步骤：
    步骤1、提供衬底(7)以及设置于所述衬底(7)正面的衬底保护支撑层(8)，将热电偶(1)制备于衬底保护支撑层(8)上；
    步骤2、在上述衬底(7)上方制备热电偶绝缘导热层(9)，所述热电偶绝缘导热层(9)覆盖在热电偶(1)并支撑在所述衬底保护支撑层(8)上；
    步骤3、选择性地掩蔽和刻蚀热电偶绝缘导热层(9)，以制备得贯通热电偶绝缘导热层(9)的热电偶引出孔(10)，通过热电偶引出孔(10)以能使得热电偶(1)的端部露出；
    步骤4、制备与热电偶(1)电连接的热电偶电极以及邻近所述热电偶(1)的测温单元体(4)，其中，热电偶电极包括分别填充于热电偶引出孔(9)内的热电偶第一电极(2)以及热电偶第二电极(3)，热电偶第一电极体(2)、热电偶第二电极(3)分别与热电偶(1)相应的端部电连接，测温单元体(4)位于热电偶绝缘导热层(9)上；
    步骤5、在衬底(7)的背面制备所需的背腔(13)，热电偶(1)的一端位于背腔(13)外以形成塞贝克系数待测单元体的冷端。
  9. 根据权利要求7所述的适用于热电堆的塞贝克系数测量结构的制备方法，其特征是：所述塞贝克系数待测单元体为一对热偶时，所述制备方法包括如下步骤：
    步骤A、提供衬底(7)以及设置于所述衬底(7)正面的衬底保护支撑层(8)；
    步骤B、在上述衬底保护支撑层(8)上制备热偶对以及邻近所述热偶对的测温单元体(4)，其中，所述热偶对包括第一热偶条(14)以及与所述第一热偶条(14)适配连接的第二热偶条(15)；
    步骤C、在衬底(7)的背面制备所需的背腔(13)，第一热偶条(14)以及第二热偶条(15)相应的端部位于背腔(13)外以形成塞贝克系数待测单元体的冷端。
  10. 根据权利要求8或9所述的适用于热电堆的塞贝克系数测量结构的制备方法，其特征是：所述热吸收结构体包括热吸收层和/或微纳米结构。
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