WO2023095890A1 - 金属及び/又は半金属含有硫化物の製造方法、ナトリウム含有硫化物 - Google Patents
金属及び/又は半金属含有硫化物の製造方法、ナトリウム含有硫化物 Download PDFInfo
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- WO2023095890A1 WO2023095890A1 PCT/JP2022/043613 JP2022043613W WO2023095890A1 WO 2023095890 A1 WO2023095890 A1 WO 2023095890A1 JP 2022043613 W JP2022043613 W JP 2022043613W WO 2023095890 A1 WO2023095890 A1 WO 2023095890A1
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- Prior art keywords
- sodium
- metal
- metalloid
- sulfide
- mass
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- 150000002738 metalloids Chemical class 0.000 title claims abstract description 177
- 229910052752 metalloid Inorganic materials 0.000 title claims abstract description 174
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 title claims abstract description 100
- 239000002184 metal Substances 0.000 title claims abstract description 92
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 239000011734 sodium Substances 0.000 title claims description 233
- 229910052708 sodium Inorganic materials 0.000 title claims description 89
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 title claims description 85
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 75
- 238000010438 heat treatment Methods 0.000 claims abstract description 74
- HYHCSLBZRBJJCH-UHFFFAOYSA-N sodium polysulfide Chemical compound [Na+].S HYHCSLBZRBJJCH-UHFFFAOYSA-N 0.000 claims abstract description 74
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 14
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 14
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011593 sulfur Substances 0.000 claims abstract description 12
- 239000000155 melt Substances 0.000 claims abstract description 11
- 239000012429 reaction media Substances 0.000 claims abstract description 7
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 6
- 150000001342 alkaline earth metals Chemical class 0.000 claims abstract description 6
- 230000002194 synthesizing effect Effects 0.000 claims abstract description 6
- 229910020275 Na2Sx Inorganic materials 0.000 claims abstract 2
- 150000004763 sulfides Chemical class 0.000 claims description 89
- 238000000034 method Methods 0.000 claims description 58
- 239000000203 mixture Substances 0.000 claims description 42
- 150000002739 metals Chemical class 0.000 claims description 40
- 229910052787 antimony Inorganic materials 0.000 claims description 32
- 229910052721 tungsten Inorganic materials 0.000 claims description 26
- 229910052750 molybdenum Inorganic materials 0.000 claims description 25
- 239000007784 solid electrolyte Substances 0.000 claims description 25
- 229910052698 phosphorus Inorganic materials 0.000 claims description 23
- 229910052785 arsenic Inorganic materials 0.000 claims description 22
- 229910052804 chromium Inorganic materials 0.000 claims description 21
- 229910052796 boron Inorganic materials 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 229910052797 bismuth Inorganic materials 0.000 claims description 14
- 229910052718 tin Inorganic materials 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910052745 lead Inorganic materials 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 229910052702 rhenium Inorganic materials 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 6
- 238000007716 flux method Methods 0.000 claims description 6
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 claims description 5
- 229910001415 sodium ion Inorganic materials 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 3
- 229910052713 technetium Inorganic materials 0.000 claims description 3
- 238000005259 measurement Methods 0.000 description 34
- 238000002360 preparation method Methods 0.000 description 25
- -1 S8 Chemical compound 0.000 description 23
- 238000002441 X-ray diffraction Methods 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 239000000463 material Substances 0.000 description 18
- 239000002131 composite material Substances 0.000 description 17
- 238000001816 cooling Methods 0.000 description 15
- 239000013078 crystal Substances 0.000 description 13
- 235000012239 silicon dioxide Nutrition 0.000 description 12
- 238000007796 conventional method Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 230000004907 flux Effects 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 239000003708 ampul Substances 0.000 description 8
- 239000002241 glass-ceramic Substances 0.000 description 8
- 239000008188 pellet Substances 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- 229910018091 Li 2 S Inorganic materials 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229910052979 sodium sulfide Inorganic materials 0.000 description 7
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 7
- 239000007858 starting material Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 229910052593 corundum Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 241000209094 Oryza Species 0.000 description 5
- 235000007164 Oryza sativa Nutrition 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 239000004570 mortar (masonry) Substances 0.000 description 5
- 235000009566 rice Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000004455 differential thermal analysis Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 150000004820 halides Chemical class 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000007773 negative electrode material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000007774 positive electrode material Substances 0.000 description 4
- 229910052703 rhodium Inorganic materials 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052716 thallium Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 240000006829 Ficus sundaica Species 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- 229910004283 SiO 4 Inorganic materials 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 150000003346 selenoethers Chemical class 0.000 description 3
- VNDYJBBGRKZCSX-UHFFFAOYSA-L zinc bromide Chemical compound Br[Zn]Br VNDYJBBGRKZCSX-UHFFFAOYSA-L 0.000 description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910020343 SiS2 Inorganic materials 0.000 description 2
- 229910004214 TaSe2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 2
- KPWJBEFBFLRCLH-UHFFFAOYSA-L cadmium bromide Chemical compound Br[Cd]Br KPWJBEFBFLRCLH-UHFFFAOYSA-L 0.000 description 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 2
- OKIIEJOIXGHUKX-UHFFFAOYSA-L cadmium iodide Chemical compound [Cd+2].[I-].[I-] OKIIEJOIXGHUKX-UHFFFAOYSA-L 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- AYTAKQFHWFYBMA-UHFFFAOYSA-N chromium dioxide Chemical compound O=[Cr]=O AYTAKQFHWFYBMA-UHFFFAOYSA-N 0.000 description 2
- QTMDXZNDVAMKGV-UHFFFAOYSA-L copper(ii) bromide Chemical compound [Cu+2].[Br-].[Br-] QTMDXZNDVAMKGV-UHFFFAOYSA-L 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- GLNWILHOFOBOFD-UHFFFAOYSA-N lithium sulfide Chemical class [Li+].[Li+].[S-2] GLNWILHOFOBOFD-UHFFFAOYSA-N 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 229910052960 marcasite Inorganic materials 0.000 description 2
- 238000003701 mechanical milling Methods 0.000 description 2
- 229910052976 metal sulfide Inorganic materials 0.000 description 2
- 229910052961 molybdenite Inorganic materials 0.000 description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 2
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 239000005077 polysulfide Substances 0.000 description 2
- 229920001021 polysulfide Polymers 0.000 description 2
- 150000008117 polysulfides Polymers 0.000 description 2
- NIFIFKQPDTWWGU-UHFFFAOYSA-N pyrite Chemical compound [Fe+2].[S-][S-] NIFIFKQPDTWWGU-UHFFFAOYSA-N 0.000 description 2
- 229910052683 pyrite Inorganic materials 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- KWVVTSALYXIJSS-UHFFFAOYSA-L silver(ii) fluoride Chemical compound [F-].[F-].[Ag+2] KWVVTSALYXIJSS-UHFFFAOYSA-L 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052959 stibnite Inorganic materials 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 239000013076 target substance Substances 0.000 description 2
- 238000002411 thermogravimetry Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- ZSUXOVNWDZTCFN-UHFFFAOYSA-L tin(ii) bromide Chemical compound Br[Sn]Br ZSUXOVNWDZTCFN-UHFFFAOYSA-L 0.000 description 2
- JTDNNCYXCFHBGG-UHFFFAOYSA-L tin(ii) iodide Chemical compound I[Sn]I JTDNNCYXCFHBGG-UHFFFAOYSA-L 0.000 description 2
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 description 2
- JKNHZOAONLKYQL-UHFFFAOYSA-K tribromoindigane Chemical compound Br[In](Br)Br JKNHZOAONLKYQL-UHFFFAOYSA-K 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 description 2
- UAYWVJHJZHQCIE-UHFFFAOYSA-L zinc iodide Chemical compound I[Zn]I UAYWVJHJZHQCIE-UHFFFAOYSA-L 0.000 description 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- VFWCMGCRMGJXDK-UHFFFAOYSA-N 1-chlorobutane Chemical compound CCCCCl VFWCMGCRMGJXDK-UHFFFAOYSA-N 0.000 description 1
- 229910021630 Antimony pentafluoride Inorganic materials 0.000 description 1
- 229910017011 AsBr3 Inorganic materials 0.000 description 1
- 229910017009 AsCl3 Inorganic materials 0.000 description 1
- 229910017050 AsF3 Inorganic materials 0.000 description 1
- 229910017216 AsI3 Inorganic materials 0.000 description 1
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- 229910016280 BI3 Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 101100275770 Caenorhabditis elegans cri-3 gene Proteins 0.000 description 1
- 101100351302 Caenorhabditis elegans pdf-2 gene Proteins 0.000 description 1
- 101100189618 Caenorhabditis elegans pdi-2 gene Proteins 0.000 description 1
- 229910021554 Chromium(II) chloride Inorganic materials 0.000 description 1
- 229910021560 Chromium(III) bromide Inorganic materials 0.000 description 1
- 229910021556 Chromium(III) chloride Inorganic materials 0.000 description 1
- 229910021557 Chromium(IV) chloride Inorganic materials 0.000 description 1
- 229910019131 CoBr2 Inorganic materials 0.000 description 1
- 229910021580 Cobalt(II) chloride Inorganic materials 0.000 description 1
- 229910021582 Cobalt(II) fluoride Inorganic materials 0.000 description 1
- 229910021584 Cobalt(II) iodide Inorganic materials 0.000 description 1
- 229910021581 Cobalt(III) chloride Inorganic materials 0.000 description 1
- 229910021583 Cobalt(III) fluoride Inorganic materials 0.000 description 1
- 229910021589 Copper(I) bromide Inorganic materials 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 229910021593 Copper(I) fluoride Inorganic materials 0.000 description 1
- 229910021595 Copper(I) iodide Inorganic materials 0.000 description 1
- 229910021590 Copper(II) bromide Inorganic materials 0.000 description 1
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 1
- 229910021594 Copper(II) fluoride Inorganic materials 0.000 description 1
- 229910018069 Cu3N Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 229910000920 Fe16N2 Inorganic materials 0.000 description 1
- 229910000705 Fe2N Inorganic materials 0.000 description 1
- 229910000727 Fe4N Inorganic materials 0.000 description 1
- 229910015140 FeN Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910005228 Ga2S3 Inorganic materials 0.000 description 1
- 229910005258 GaBr3 Inorganic materials 0.000 description 1
- 229910005267 GaCl3 Inorganic materials 0.000 description 1
- 229910005270 GaF3 Inorganic materials 0.000 description 1
- 229910005263 GaI3 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005543 GaSe Inorganic materials 0.000 description 1
- 229910005987 Ge3N4 Inorganic materials 0.000 description 1
- 229910006109 GeBr4 Inorganic materials 0.000 description 1
- 229910006111 GeCl2 Inorganic materials 0.000 description 1
- 229910006113 GeCl4 Inorganic materials 0.000 description 1
- 229910006162 GeI2 Inorganic materials 0.000 description 1
- 229910006149 GeI4 Inorganic materials 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910005829 GeS Inorganic materials 0.000 description 1
- 229910005842 GeS2 Inorganic materials 0.000 description 1
- 229910005866 GeSe Inorganic materials 0.000 description 1
- 229910005867 GeSe2 Inorganic materials 0.000 description 1
- 229910021600 Germanium(II) bromide Inorganic materials 0.000 description 1
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- 229910021620 Indium(III) fluoride Inorganic materials 0.000 description 1
- 229910021621 Indium(III) iodide Inorganic materials 0.000 description 1
- 229910021638 Iridium(III) chloride Inorganic materials 0.000 description 1
- 229910021575 Iron(II) bromide Inorganic materials 0.000 description 1
- 229910021577 Iron(II) chloride Inorganic materials 0.000 description 1
- 229910021579 Iron(II) iodide Inorganic materials 0.000 description 1
- 229910021576 Iron(III) bromide Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910017586 La2S3 Inorganic materials 0.000 description 1
- 229910002319 LaF3 Inorganic materials 0.000 description 1
- 229910016859 Lanthanum iodide Inorganic materials 0.000 description 1
- 229910014323 Lanthanum(III) bromide Inorganic materials 0.000 description 1
- 229910001216 Li2S Inorganic materials 0.000 description 1
- 229910021380 Manganese Chloride Inorganic materials 0.000 description 1
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical compound Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 description 1
- 229910021568 Manganese(II) bromide Inorganic materials 0.000 description 1
- 229910021570 Manganese(II) fluoride Inorganic materials 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- BZLVMXJERCGZMT-UHFFFAOYSA-N Methyl tert-butyl ether Chemical compound COC(C)(C)C BZLVMXJERCGZMT-UHFFFAOYSA-N 0.000 description 1
- 229910016803 Mn4N Inorganic materials 0.000 description 1
- 229910015421 Mo2N Inorganic materials 0.000 description 1
- 229910015206 MoBr2 Inorganic materials 0.000 description 1
- 229910015209 MoBr3 Inorganic materials 0.000 description 1
- 229910015227 MoCl3 Inorganic materials 0.000 description 1
- 229910015221 MoCl5 Inorganic materials 0.000 description 1
- 229910015255 MoF6 Inorganic materials 0.000 description 1
- 229910015621 MoO Inorganic materials 0.000 description 1
- 229910015667 MoO4 Inorganic materials 0.000 description 1
- 229910015707 MoOz Inorganic materials 0.000 description 1
- 229910015800 MoS Inorganic materials 0.000 description 1
- 101100033674 Mus musculus Ren2 gene Proteins 0.000 description 1
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 1
- 229910020506 Na4SnS4 Inorganic materials 0.000 description 1
- 229910019804 NbCl5 Inorganic materials 0.000 description 1
- 229910019787 NbF5 Inorganic materials 0.000 description 1
- 229910020040 NbS Inorganic materials 0.000 description 1
- 229910020042 NbS2 Inorganic materials 0.000 description 1
- 229910020039 NbSe2 Inorganic materials 0.000 description 1
- 229910020050 NbSe3 Inorganic materials 0.000 description 1
- 101100324822 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) fes-4 gene Proteins 0.000 description 1
- 229910021543 Nickel dioxide Inorganic materials 0.000 description 1
- 229910021585 Nickel(II) bromide Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910021587 Nickel(II) fluoride Inorganic materials 0.000 description 1
- 229910021588 Nickel(II) iodide Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910020667 PBr3 Inorganic materials 0.000 description 1
- 229910020656 PBr5 Inorganic materials 0.000 description 1
- 229910021605 Palladium(II) bromide Inorganic materials 0.000 description 1
- 229910021606 Palladium(II) iodide Inorganic materials 0.000 description 1
- 229910002666 PdCl2 Inorganic materials 0.000 description 1
- 229910019571 Re2O7 Inorganic materials 0.000 description 1
- 229910019593 ReF6 Inorganic materials 0.000 description 1
- 229910002785 ReO3 Inorganic materials 0.000 description 1
- 229910021604 Rhodium(III) chloride Inorganic materials 0.000 description 1
- 229910019891 RuCl3 Inorganic materials 0.000 description 1
- 229910021603 Ruthenium iodide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003676 SiBr4 Inorganic materials 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 229910004480 SiI4 Inorganic materials 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 229910021611 Silver subfluoride Inorganic materials 0.000 description 1
- 229910021608 Silver(I) fluoride Inorganic materials 0.000 description 1
- 229910021610 Silver(III) fluoride Inorganic materials 0.000 description 1
- 229910006853 SnOz Inorganic materials 0.000 description 1
- 229910004537 TaCl5 Inorganic materials 0.000 description 1
- 229910004546 TaF5 Inorganic materials 0.000 description 1
- 229910004211 TaS2 Inorganic materials 0.000 description 1
- 229910009973 Ti2O3 Inorganic materials 0.000 description 1
- 229910010062 TiCl3 Inorganic materials 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- 229910010342 TiF4 Inorganic materials 0.000 description 1
- 229910010386 TiI4 Inorganic materials 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- 229910003092 TiS2 Inorganic materials 0.000 description 1
- 229910008483 TiSe2 Inorganic materials 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 229910021623 Tin(IV) bromide Inorganic materials 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- 229910021549 Vanadium(II) chloride Inorganic materials 0.000 description 1
- 229910021552 Vanadium(IV) chloride Inorganic materials 0.000 description 1
- 229910021553 Vanadium(V) chloride Inorganic materials 0.000 description 1
- 229910003091 WCl6 Inorganic materials 0.000 description 1
- 229910003090 WSe2 Inorganic materials 0.000 description 1
- 229910009523 YCl3 Inorganic materials 0.000 description 1
- 229910009527 YF3 Inorganic materials 0.000 description 1
- 229910021601 Yttrium(III) bromide Inorganic materials 0.000 description 1
- 229910021602 Yttrium(III) iodide Inorganic materials 0.000 description 1
- 229910007379 Zn3N2 Inorganic materials 0.000 description 1
- 229910007938 ZrBr4 Inorganic materials 0.000 description 1
- 229910007932 ZrCl4 Inorganic materials 0.000 description 1
- 229910007998 ZrF4 Inorganic materials 0.000 description 1
- 229910008047 ZrI4 Inorganic materials 0.000 description 1
- 229910006247 ZrS2 Inorganic materials 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PQLAYKMGZDUDLQ-UHFFFAOYSA-K aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 description 1
- CECABOMBVQNBEC-UHFFFAOYSA-K aluminium iodide Chemical compound I[Al](I)I CECABOMBVQNBEC-UHFFFAOYSA-K 0.000 description 1
- VBVBHWZYQGJZLR-UHFFFAOYSA-I antimony pentafluoride Chemical compound F[Sb](F)(F)(F)F VBVBHWZYQGJZLR-UHFFFAOYSA-I 0.000 description 1
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical compound Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 description 1
- GUNJVIDCYZYFGV-UHFFFAOYSA-K antimony trifluoride Chemical compound F[Sb](F)F GUNJVIDCYZYFGV-UHFFFAOYSA-K 0.000 description 1
- RPJGYLSSECYURW-UHFFFAOYSA-K antimony(3+);tribromide Chemical compound Br[Sb](Br)Br RPJGYLSSECYURW-UHFFFAOYSA-K 0.000 description 1
- KWQLUUQBTAXYCB-UHFFFAOYSA-K antimony(3+);triiodide Chemical compound I[Sb](I)I KWQLUUQBTAXYCB-UHFFFAOYSA-K 0.000 description 1
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- JMBNQWNFNACVCB-UHFFFAOYSA-N arsenic tribromide Chemical compound Br[As](Br)Br JMBNQWNFNACVCB-UHFFFAOYSA-N 0.000 description 1
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 1
- JCMGUODNZMETBM-UHFFFAOYSA-N arsenic trifluoride Chemical compound F[As](F)F JCMGUODNZMETBM-UHFFFAOYSA-N 0.000 description 1
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical compound Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 description 1
- TXKAQZRUJUNDHI-UHFFFAOYSA-K bismuth tribromide Chemical compound Br[Bi](Br)Br TXKAQZRUJUNDHI-UHFFFAOYSA-K 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- YMEKEHSRPZAOGO-UHFFFAOYSA-N boron triiodide Chemical compound IB(I)I YMEKEHSRPZAOGO-UHFFFAOYSA-N 0.000 description 1
- LVEULQCPJDDSLD-UHFFFAOYSA-L cadmium fluoride Chemical compound F[Cd]F LVEULQCPJDDSLD-UHFFFAOYSA-L 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 description 1
- 229910000424 chromium(II) oxide Inorganic materials 0.000 description 1
- 239000011636 chromium(III) chloride Substances 0.000 description 1
- 235000007831 chromium(III) chloride Nutrition 0.000 description 1
- XBWRJSSJWDOUSJ-UHFFFAOYSA-L chromium(ii) chloride Chemical compound Cl[Cr]Cl XBWRJSSJWDOUSJ-UHFFFAOYSA-L 0.000 description 1
- UZDWIWGMKWZEPE-UHFFFAOYSA-K chromium(iii) bromide Chemical compound [Cr+3].[Br-].[Br-].[Br-] UZDWIWGMKWZEPE-UHFFFAOYSA-K 0.000 description 1
- AVWLPUQJODERGA-UHFFFAOYSA-L cobalt(2+);diiodide Chemical compound [Co+2].[I-].[I-] AVWLPUQJODERGA-UHFFFAOYSA-L 0.000 description 1
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 description 1
- WZJQNLGQTOCWDS-UHFFFAOYSA-K cobalt(iii) fluoride Chemical compound F[Co](F)F WZJQNLGQTOCWDS-UHFFFAOYSA-K 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- NFFYXVOHHLQALV-UHFFFAOYSA-N copper(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Cu].[Cu] NFFYXVOHHLQALV-UHFFFAOYSA-N 0.000 description 1
- GWFAVIIMQDUCRA-UHFFFAOYSA-L copper(ii) fluoride Chemical compound [F-].[F-].[Cu+2] GWFAVIIMQDUCRA-UHFFFAOYSA-L 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- LCWVIHDXYOFGEG-UHFFFAOYSA-N diboron tetrachloride Chemical compound ClB(Cl)B(Cl)Cl LCWVIHDXYOFGEG-UHFFFAOYSA-N 0.000 description 1
- DUVPPTXIBVUIKL-UHFFFAOYSA-N dibromogermanium Chemical compound Br[Ge]Br DUVPPTXIBVUIKL-UHFFFAOYSA-N 0.000 description 1
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 1
- RJYMRRJVDRJMJW-UHFFFAOYSA-L dibromomanganese Chemical compound Br[Mn]Br RJYMRRJVDRJMJW-UHFFFAOYSA-L 0.000 description 1
- FPHIOHCCQGUGKU-UHFFFAOYSA-L difluorolead Chemical compound F[Pb]F FPHIOHCCQGUGKU-UHFFFAOYSA-L 0.000 description 1
- CTNMMTCXUUFYAP-UHFFFAOYSA-L difluoromanganese Chemical compound F[Mn]F CTNMMTCXUUFYAP-UHFFFAOYSA-L 0.000 description 1
- IAGYEMVJHPEPGE-UHFFFAOYSA-N diiodogermanium Chemical compound I[Ge]I IAGYEMVJHPEPGE-UHFFFAOYSA-N 0.000 description 1
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- SRVXDMYFQIODQI-UHFFFAOYSA-K gallium(iii) bromide Chemical compound Br[Ga](Br)Br SRVXDMYFQIODQI-UHFFFAOYSA-K 0.000 description 1
- DWRNSCDYNYYYHT-UHFFFAOYSA-K gallium(iii) iodide Chemical compound I[Ga](I)I DWRNSCDYNYYYHT-UHFFFAOYSA-K 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- QHGIKMVOLGCZIP-UHFFFAOYSA-N germanium dichloride Chemical compound Cl[Ge]Cl QHGIKMVOLGCZIP-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- UHUWQCGPGPPDDT-UHFFFAOYSA-N greigite Chemical compound [S-2].[S-2].[S-2].[S-2].[Fe+2].[Fe+3].[Fe+3] UHUWQCGPGPPDDT-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- YCOZIPAWZNQLMR-UHFFFAOYSA-N heptane - octane Natural products CCCCCCCCCCCCCCC YCOZIPAWZNQLMR-UHFFFAOYSA-N 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N iridium(IV) oxide Inorganic materials O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- GYCHYNMREWYSKH-UHFFFAOYSA-L iron(ii) bromide Chemical compound [Fe+2].[Br-].[Br-] GYCHYNMREWYSKH-UHFFFAOYSA-L 0.000 description 1
- BQZGVMWPHXIKEQ-UHFFFAOYSA-L iron(ii) iodide Chemical compound [Fe+2].[I-].[I-] BQZGVMWPHXIKEQ-UHFFFAOYSA-L 0.000 description 1
- SHXXPRJOPFJRHA-UHFFFAOYSA-K iron(iii) fluoride Chemical compound F[Fe](F)F SHXXPRJOPFJRHA-UHFFFAOYSA-K 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- KYKBXWMMXCGRBA-UHFFFAOYSA-K lanthanum(3+);triiodide Chemical compound I[La](I)I KYKBXWMMXCGRBA-UHFFFAOYSA-K 0.000 description 1
- XKUYOJZZLGFZTC-UHFFFAOYSA-K lanthanum(iii) bromide Chemical compound Br[La](Br)Br XKUYOJZZLGFZTC-UHFFFAOYSA-K 0.000 description 1
- YAFKGUAJYKXPDI-UHFFFAOYSA-J lead tetrafluoride Chemical compound F[Pb](F)(F)F YAFKGUAJYKXPDI-UHFFFAOYSA-J 0.000 description 1
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 description 1
- 229910000341 lead(IV) sulfide Inorganic materials 0.000 description 1
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000011565 manganese chloride Substances 0.000 description 1
- 235000002867 manganese chloride Nutrition 0.000 description 1
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(III) oxide Inorganic materials O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 description 1
- 229910000473 manganese(VI) oxide Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- RLCOZMCCEKDUPY-UHFFFAOYSA-H molybdenum hexafluoride Chemical compound F[Mo](F)(F)(F)(F)F RLCOZMCCEKDUPY-UHFFFAOYSA-H 0.000 description 1
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 description 1
- ZSSVQAGPXAAOPV-UHFFFAOYSA-K molybdenum trichloride Chemical compound Cl[Mo](Cl)Cl ZSSVQAGPXAAOPV-UHFFFAOYSA-K 0.000 description 1
- MMQODXFIGCNBIM-UHFFFAOYSA-K molybdenum(iii) iodide Chemical compound [Mo+3].[I-].[I-].[I-] MMQODXFIGCNBIM-UHFFFAOYSA-K 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- YGHCWPXPAHSSNA-UHFFFAOYSA-N nickel subsulfide Chemical compound [Ni].[Ni]=S.[Ni]=S YGHCWPXPAHSSNA-UHFFFAOYSA-N 0.000 description 1
- IPLJNQFXJUCRNH-UHFFFAOYSA-L nickel(2+);dibromide Chemical compound [Ni+2].[Br-].[Br-] IPLJNQFXJUCRNH-UHFFFAOYSA-L 0.000 description 1
- DBJLJFTWODWSOF-UHFFFAOYSA-L nickel(ii) fluoride Chemical compound F[Ni]F DBJLJFTWODWSOF-UHFFFAOYSA-L 0.000 description 1
- BFSQJYRFLQUZKX-UHFFFAOYSA-L nickel(ii) iodide Chemical compound I[Ni]I BFSQJYRFLQUZKX-UHFFFAOYSA-L 0.000 description 1
- HFLAMWCKUFHSAZ-UHFFFAOYSA-N niobium dioxide Inorganic materials O=[Nb]=O HFLAMWCKUFHSAZ-UHFFFAOYSA-N 0.000 description 1
- BFRGSJVXBIWTCF-UHFFFAOYSA-N niobium monoxide Inorganic materials [Nb]=O BFRGSJVXBIWTCF-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 229910052958 orpiment Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- INIOZDBICVTGEO-UHFFFAOYSA-L palladium(ii) bromide Chemical compound Br[Pd]Br INIOZDBICVTGEO-UHFFFAOYSA-L 0.000 description 1
- HNNUTDROYPGBMR-UHFFFAOYSA-L palladium(ii) iodide Chemical compound [Pd+2].[I-].[I-] HNNUTDROYPGBMR-UHFFFAOYSA-L 0.000 description 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 1
- AOLPZAHRYHXPLR-UHFFFAOYSA-I pentafluoroniobium Chemical compound F[Nb](F)(F)(F)F AOLPZAHRYHXPLR-UHFFFAOYSA-I 0.000 description 1
- UHZYTMXLRWXGPK-UHFFFAOYSA-N phosphorus pentachloride Chemical compound ClP(Cl)(Cl)(Cl)Cl UHZYTMXLRWXGPK-UHFFFAOYSA-N 0.000 description 1
- IPNPIHIZVLFAFP-UHFFFAOYSA-N phosphorus tribromide Chemical compound BrP(Br)Br IPNPIHIZVLFAFP-UHFFFAOYSA-N 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- YUCDNKHFHNORTO-UHFFFAOYSA-H rhenium hexafluoride Chemical compound F[Re](F)(F)(F)(F)F YUCDNKHFHNORTO-UHFFFAOYSA-H 0.000 description 1
- YSZJKUDBYALHQE-UHFFFAOYSA-N rhenium trioxide Chemical compound O=[Re](=O)=O YSZJKUDBYALHQE-UHFFFAOYSA-N 0.000 description 1
- SONJTKJMTWTJCT-UHFFFAOYSA-K rhodium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Rh+3] SONJTKJMTWTJCT-UHFFFAOYSA-K 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910001927 ruthenium tetroxide Inorganic materials 0.000 description 1
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 1
- QHASIAZYSXZCGO-UHFFFAOYSA-N selanylidenenickel Chemical compound [Se]=[Ni] QHASIAZYSXZCGO-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000338 selenium disulfide Inorganic materials 0.000 description 1
- VIDTVPHHDGRGAF-UHFFFAOYSA-N selenium sulfide Chemical compound [Se]=S VIDTVPHHDGRGAF-UHFFFAOYSA-N 0.000 description 1
- VTQZBGAODFEJOW-UHFFFAOYSA-N selenium tetrabromide Chemical compound Br[Se](Br)(Br)Br VTQZBGAODFEJOW-UHFFFAOYSA-N 0.000 description 1
- LNBXMNQCXXEHFT-UHFFFAOYSA-N selenium tetrachloride Chemical compound Cl[Se](Cl)(Cl)Cl LNBXMNQCXXEHFT-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- GCPVYIPZZUPXPB-UHFFFAOYSA-I tantalum(v) bromide Chemical compound Br[Ta](Br)(Br)(Br)Br GCPVYIPZZUPXPB-UHFFFAOYSA-I 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
- PTYIPBNVDTYPIO-UHFFFAOYSA-N tellurium tetrabromide Chemical compound Br[Te](Br)(Br)Br PTYIPBNVDTYPIO-UHFFFAOYSA-N 0.000 description 1
- SWLJJEFSPJCUBD-UHFFFAOYSA-N tellurium tetrachloride Chemical compound Cl[Te](Cl)(Cl)Cl SWLJJEFSPJCUBD-UHFFFAOYSA-N 0.000 description 1
- XCOKHDCPVWVFKS-UHFFFAOYSA-N tellurium tetraiodide Chemical compound I[Te](I)(I)I XCOKHDCPVWVFKS-UHFFFAOYSA-N 0.000 description 1
- VJHDVMPJLLGYBL-UHFFFAOYSA-N tetrabromogermane Chemical compound Br[Ge](Br)(Br)Br VJHDVMPJLLGYBL-UHFFFAOYSA-N 0.000 description 1
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 description 1
- PJYXVICYYHGLSW-UHFFFAOYSA-J tetrachloroplumbane Chemical compound Cl[Pb](Cl)(Cl)Cl PJYXVICYYHGLSW-UHFFFAOYSA-J 0.000 description 1
- CUDGTZJYMWAJFV-UHFFFAOYSA-N tetraiodogermane Chemical compound I[Ge](I)(I)I CUDGTZJYMWAJFV-UHFFFAOYSA-N 0.000 description 1
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 1
- LTSUHJWLSNQKIP-UHFFFAOYSA-J tin(iv) bromide Chemical compound Br[Sn](Br)(Br)Br LTSUHJWLSNQKIP-UHFFFAOYSA-J 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 1
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 description 1
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 description 1
- YONPGGFAJWQGJC-UHFFFAOYSA-K titanium(iii) chloride Chemical compound Cl[Ti](Cl)Cl YONPGGFAJWQGJC-UHFFFAOYSA-K 0.000 description 1
- FEONEKOZSGPOFN-UHFFFAOYSA-K tribromoiron Chemical compound Br[Fe](Br)Br FEONEKOZSGPOFN-UHFFFAOYSA-K 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- DANYXEHCMQHDNX-UHFFFAOYSA-K trichloroiridium Chemical compound Cl[Ir](Cl)Cl DANYXEHCMQHDNX-UHFFFAOYSA-K 0.000 description 1
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 1
- JNLSTWIBJFIVHZ-UHFFFAOYSA-K trifluoroindigane Chemical compound F[In](F)F JNLSTWIBJFIVHZ-UHFFFAOYSA-K 0.000 description 1
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 1
- KOECRLKKXSXCPB-UHFFFAOYSA-K triiodobismuthane Chemical compound I[Bi](I)I KOECRLKKXSXCPB-UHFFFAOYSA-K 0.000 description 1
- RMUKCGUDVKEQPL-UHFFFAOYSA-K triiodoindigane Chemical compound I[In](I)I RMUKCGUDVKEQPL-UHFFFAOYSA-K 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- UXVOMHPBSSIGNQ-UHFFFAOYSA-I tungsten(v) bromide Chemical compound Br[W](Br)(Br)(Br)Br UXVOMHPBSSIGNQ-UHFFFAOYSA-I 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- JTJFQBNJBPPZRI-UHFFFAOYSA-J vanadium tetrachloride Chemical compound Cl[V](Cl)(Cl)Cl JTJFQBNJBPPZRI-UHFFFAOYSA-J 0.000 description 1
- ITAKKORXEUJTBC-UHFFFAOYSA-L vanadium(ii) chloride Chemical compound Cl[V]Cl ITAKKORXEUJTBC-UHFFFAOYSA-L 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009692 water atomization Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- PCMOZDDGXKIOLL-UHFFFAOYSA-K yttrium chloride Chemical compound [Cl-].[Cl-].[Cl-].[Y+3] PCMOZDDGXKIOLL-UHFFFAOYSA-K 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
- OMQSJNWFFJOIMO-UHFFFAOYSA-J zirconium tetrafluoride Chemical compound F[Zr](F)(F)F OMQSJNWFFJOIMO-UHFFFAOYSA-J 0.000 description 1
- LSWWNKUULMMMIL-UHFFFAOYSA-J zirconium(iv) bromide Chemical compound Br[Zr](Br)(Br)Br LSWWNKUULMMMIL-UHFFFAOYSA-J 0.000 description 1
- XLMQAUWIRARSJG-UHFFFAOYSA-J zirconium(iv) iodide Chemical compound [Zr+4].[I-].[I-].[I-].[I-] XLMQAUWIRARSJG-UHFFFAOYSA-J 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B17/00—Sulfur; Compounds thereof
- C01B17/20—Methods for preparing sulfides or polysulfides, in general
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B17/00—Sulfur; Compounds thereof
- C01B17/22—Alkali metal sulfides or polysulfides
- C01B17/34—Polysulfides of sodium or potassium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/10—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
- H01M10/0561—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
- H01M10/0562—Solid materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Definitions
- the present invention relates to a method for producing metal and/or metalloid-containing sulfides.
- the present invention relates to sodium-containing sulfides.
- Alkali metal-containing sulfides such as lithium-containing sulfides
- Alkali metal-containing sulfides are synthesized by mixing, for example, lithium sulfides with a metal compound in an inert gas atmosphere, vacuum-sealing the mixture in a quartz ampoule, and firing the quartz ampoule together.
- the melt obtainable by heating the first sodium polysulfide represented by Na 2 S x (where 1 ⁇ x ⁇ 5) is used as the reaction medium and sulfur source.
- metal- and/or metalloid-containing sulfides characterized by synthesizing metal- and/or metalloid-containing sulfides (where the metal is neither an alkali metal nor an alkaline earth metal) under normal pressure A method is provided.
- FIG. 1 is a graph showing the results of X-ray diffraction measurement of sodium-containing sulfides of Examples 1 to 3 and Comparative Example 1.
- FIG. 2 is a graph showing the results of X-ray diffraction measurement of sodium-containing sulfides of Examples 4 to 6.
- FIG. 10 is a graph showing the results of X-ray diffraction measurement of the sodium-containing sulfides of Examples 7-9.
- FIG. 2 is a graph showing the results of X-ray diffraction measurement of sodium-containing sulfides of Examples 6 and 10.
- FIG. 1 is a graph showing Arrhenius plots of sodium-containing sulfides of Examples 2, 4 and 6; FIG.
- FIG. 10 is a graph showing the results of X-ray diffraction measurement of the sodium-containing sulfides of Examples 11-13.
- FIG. 2 is a graph showing the results of X-ray diffraction measurement of sodium-containing sulfides of Examples 14 to 16.
- FIG. 4 is a graph showing the results of X-ray diffraction measurement of sodium-containing sulfides of Examples 17, 18 and 22.
- FIG. 2 is a graph showing the results of X-ray diffraction measurement of sodium-containing sulfides of Examples 17 and 19 to 21.
- FIG. FIG. 4 is a graph showing Arrhenius plots of sodium-containing sulfides of Examples 17-20.
- FIG. 2 is a graph showing the results of X-ray diffraction measurement of sodium-containing sulfides of Examples 17, 23 and 24.
- FIG. FIG. 10 is a graph showing the results of X-ray diffraction measurement of the sodium-containing sulfides of Examples 25 and 26.
- FIG. 2 is a graph showing the results of TG-DTA measurement performed on a mixture of Na 2 S and S.
- FIG. 2 is a graph showing the results of TG-DTA measurement performed on a mixture of Na 2 S and S.
- FIG. 2 is a graph showing the results of TG-DTA measurement performed on a Li 2 S, S mixture.
- 2 is a graph showing the results of TG-DTA measurement performed on a Li 2 S, S mixture.
- 2 is a graph showing the results of TG-DTA measurement on a mixture of Na 2 S, B, and S.
- a to b (a and b are specific values) means from a to b, unless otherwise specified.
- the present invention uses a melt obtainable by heating a first sodium polysulfide represented by Na 2 S x (wherein 1 ⁇ x ⁇ 5) as a reaction medium and a sulfur source for metal and/or or a sulfide containing a metalloid (wherein said metal is neither an alkali metal nor an alkaline earth metal) is synthesized under normal pressure. (hereinafter also simply referred to as the present manufacturing method).
- the present invention reacts a melt obtainable by heating a first sodium polysulfide represented by Na 2 S x (where 1 ⁇ x ⁇ 5).
- a composite sulfide containing Na and M (M is one or more metals and/or metalloids that are neither alkali metals nor alkaline earth metals) is synthesized under normal pressure as a medium and sulfur source.
- a method for producing -M containing sulfides is provided.
- sodium polysulfide can be used as a flux. Therefore, crystals can be obtained by a flux method using sodium polysulfide as a flux.
- the flux method is a kind of crystal growth method from a solution, in which a solute is dissolved in a high-temperature molten flux (solvent) to form and grow crystals.
- a self-flux method in which the composition ratio of starting materials such as sodium polysulfide, metals and/or metalloids or compounds is adjusted to the composition of the target substance.
- crystal growth can be promoted by adding seed crystals.
- the shape of the precipitated crystals is not particularly limited, and may be, for example, needle-like, dendritic or plate-like. Also, the crystal size is not particularly limited.
- the first sodium polysulfide represented by Na 2 S x (wherein 1 ⁇ x ⁇ 5) is not particularly limited, but examples include Na 2 S 2 , Na 2 S 3 , Na 2 S 4 , Na 2S5 and the like. One type or a plurality of types of the first sodium polysulfide may be contained.
- the first sodium polysulfide is preferably a first sodium polysulfide having an average composition of Na 2 S x (where 1 ⁇ x ⁇ 5), and Na 2 S x (wherein 1 ⁇ x ⁇ 5). 1 ⁇ x ⁇ 4), preferably the first sodium polysulfide represented by Na 2 S x (wherein 1 ⁇ x ⁇ 3). More preferably, it is the first sodium polysulfide represented by Na 2 S x (where 1.5 ⁇ x ⁇ 2.5).
- elemental S is not particularly limited, and may be cyclic sulfur such as S8 , chain-like S, rubber-like S, or insoluble S.
- the metal or semimetal (M) is not particularly limited, but includes, for example, metals or semimetals of Groups 3 to 16 of the 2nd to 6th periods. Metals or metalloids of groups 5 to 16 are preferred. Only one of these may be used, or two or more may be used.
- metals or semimetals of Groups 3 to 16 of the 2nd to 6th periods include B, Al, Si, P, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, La, Ta, W, Re, Ir, Tl, Pb and Bi, more specifically B, Al, Si, P, Zn, Ga, Ge, As, Se, Cd, In, Sn, Sb, Te, Tl, Pb, Bi, V, Cr, Mn, Nb, Mo, Tc, Ta, W and Re.
- B, Al, Si, Ga, Ge, Sn, Sb, O, As, Bi, W, Mo and Cr are preferably selected, and B, Al, Si, Ga, Ge, Sn, Sb, It is more preferably selected from P, W, Mo.
- simple metals or metalloids include the metals or metalloids described above. Only one type of single metal or metalloid may be used, or two or more types may be used.
- the combination of two or more metals can be any combination of the metals or semimetals described above, and at least one selected from Sb, P, As, Bi, W, Mo, Cr, Si, B and Al.
- Sb, P, As, Bi, W, Mo and Cr more preferably Sb, P, As, Bi, W, Mo, Cr, Si, B and Al more preferably selected from Sb, P, As, Bi, W, Mo and Cr, at least one selected from Sb, P, As, Bi and W, Mo, More preferably at least one or more selected from Cr, more preferably a combination of one selected from Sb, P, As and Bi and one selected from W, Mo and Cr, a combination of Sb and W, Sb and Mo and a combination of P and W are more preferred.
- the compounds containing metals or metalloids are not particularly limited, but examples include oxides, nitrides, sulfides, selenides, and halides of metals or metalloids. Specifically, oxides, nitrides, sulfides, selenides, and halides of metals or metalloids of groups 3 to 16 of the 2nd to 6th periods, more specifically, the Oxides, nitrides, sulfides, selenides, and halides of Groups 5 to 16 metals or metalloids of Period 2 to Period 6; Oxides and nitrides of Group 16 metals or metalloids are preferred.
- metal or metalloid oxides examples include BOz (0 ⁇ z ⁇ 2) [specifically B 2 O 3 ], AlOz (0 ⁇ z ⁇ 2) [specifically Al 2 O 3 ], SiOz (0 ⁇ z ⁇ 2) [specifically SiO2 ], POz (0 ⁇ z ⁇ 4) [specifically PO2, P2O3 , P2O5 ] , TiOz (0 ⁇ z ⁇ 3) [specifically TiO, Ti2O3 , TiO2 , TiO3 ] , VOz (0 ⁇ z ⁇ 3) [specifically VO, VO3 , V2O3 , V2O4 , V 2O5 , V6O13 ], CrOz (0 ⁇ z ⁇ 3 ) [ specifically CrO, Cr2O3 , CrO2 , CrO3 ], MnOz (0 ⁇ z ⁇ 3) [specifically MnO, Mn3O4 , MnO2 , MnO3 , Mn2O3 ] , FeOz (0 ⁇ z ⁇ 3) [specifically FeO, Fe
- metal or semimetal sulfides include M 1 Sz (M 1 is B, Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, selected from Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, La, Ta, W, Re, Ir, Tl, Pb and Bi, 0 ⁇ z ⁇ 6 ), P A S B (where A and B are arbitrary positive integers), and the like.
- M 1 Sz is B, Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, selected from Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, La, Ta, W, Re, Ir, Tl, Pb and Bi, 0 ⁇ z ⁇ 6 ), P A S B (where A and B are arbitrary positive integers),
- Metal or metalloid selenides include, for example, M 2 Sz (M 2 is B, Al, Si, P, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, selected from Se, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, La, Ta, W, Re, Ir, Tl, Pb and Bi, 0 ⁇ z ⁇ 6) and the like.
- M 2 Sz M 2 is B, Al, Si, P, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, selected from Se, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, La, Ta, W, Re, Ir, Tl, Pb and Bi, 0 ⁇ z ⁇ 6) and the like.
- Nitrides of metals or metalloids such as BN, AlN, Si3N4, P3N5 , PN , P2N3 , TiN, VN, CrN, Cr2N , MnN , MnN2 , Mn4N , FeN , Fe2N , Fe4N, Fe7N3 , Fe16N2 , CoN, NiN , CuN , Cu3N , Zn3N2 , GaN, Ge3N4 , AsN, Se4N4 , YN, ZrN, NbN, Mo2N , RuN2 , RuN, PbN2 , Ag3N , CdN, InN, SnN, SbN, TeN, TaN, WN, ReN2 , IrN, TIN, BiN and the like.
- metal or semimetal halides examples include M 3 ⁇ z (M 3 is B, Al, Si, P, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, La, Ta, W, Re, Ir, Tl, Pb and Bi, ⁇ is F , Cl, Br and I, including 0 ⁇ z ⁇ 6).
- M 3 is B, Al, Si, P, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, La, Ta, W, Re, Ir, Tl, Pb and Bi
- ⁇ is F , Cl, Br and I, including 0 ⁇ z ⁇ 6).
- the compound containing these metals or metalloids is preferably used in a stoichiometric ratio of the metal and/or metalloid-containing sulfides described below.
- This production method may be carried out under a pressure lower or higher than normal pressure, but is preferably carried out under normal pressure.
- Normal pressure refers to a range of 200 hPa around 1013 hPa, for example.
- the pressure conditions may be varied, such as gradually pressurizing, gradually depressurizing, normal pressure during heating but pressurizing during cooling.
- normal pressure means normal pressure at least during the synthesis of sulfides containing metals and/or metalloids, which will be described later.
- This production method is preferably carried out under an inert atmosphere (for example, under a nitrogen atmosphere, an argon atmosphere, a helium atmosphere, etc.). Moreover, it is preferable that the treatment be performed in an environment where the water concentration is 10000 ppm or less and the oxygen concentration is 10000 ppm or less.
- an inert atmosphere for example, under a nitrogen atmosphere, an argon atmosphere, a helium atmosphere, etc.
- the treatment be performed in an environment where the water concentration is 10000 ppm or less and the oxygen concentration is 10000 ppm or less.
- the metal- and/or metalloid-containing sulfide (hereinafter simply referred to as metal and/or metalloid-containing sulfide) material used in the present production method may be subjected to a mixing step before being subjected to production. good.
- the mixing method is not particularly limited as long as it can be used in the field. For example, a method using a mortar, a V-type mixer, a mechanochemical treatment, a sand mill, a mixer (homomixer, planetary mixer, etc.), or the like is used. Things are mentioned.
- the mechanochemical treatment apparatus is not particularly limited as long as it can mix while imparting mechanical energy.
- This production method includes a step of heating a first sodium polysulfide represented by Na 2 S x (where 1 ⁇ x ⁇ 5).
- a first sodium polysulfide represented by Na 2 S x for example, materials used for producing metal and/or metalloid-containing sulfides (specifically, the first sodium polysulfide and one or more kinds of metals and/or metalloids or metals and/or metalloids)
- One or more compounds containing a metal) [and, if necessary, elemental S] are added to a reaction vessel, and the reaction vessel is heated.
- the heating temperature is not particularly limited, it is preferably above the melting point and below the boiling point of sodium polysulfide.
- the heating temperature can be appropriately set according to the sodium polysulfide to be used, the target substance, the heat resistance of the reaction vessel, and the like. 120°C, 140°C, 150°C, 160°C, 180°C, 200°C, 220°C, 240°C, 250°C, 260°C, 280°C, 300°C, 320°C, 340°C, 350°C, 360°C, 380°C , 400°C, 420°C, 440°C, 450°C, 480°C, 500°C, 550°C, 600°C, 650°C, 700°C, 750°C, 800°C, 850°C, 900°C, 950°C, 999°C, 1000°C C., 1100.degree.
- each heating temperature is preferably in the range of 150 ° C. to 1200 ° C., more preferably in the range of 200 ° C. to 1000 ° C., and more preferably in the range of 300 ° C. to 800 ° C. It is preferably in the range of 350°C to 700°C.
- heating is performed twice, there may or may not be a cooling step between the first heating and the second heating.
- the second heating may be performed at a higher temperature than the first heating, or may be performed at a lower temperature.
- the heating time is not particularly limited as long as the material containing sodium polysulfide can be melted, and can be set as appropriate. For example, 1 minute, 2 minutes, 5 minutes, 10 minutes, 20 minutes, 30 minutes, 40 minutes, 50 minutes, 1.0 hours, 1.5 hours, 2.0 hours, 2.5 hours, 3.0 hours, 3.5 hours, 4.0 hours, 4.5 hours, 5.0 hours, 5.5 hours, 6.0 hours, 6.5 hours, 7.0 hours, 7.5 hours, 8.0 hours, 8.5 hours, 9.0 hours, 9.5 hours, 10.0 hours, 10.5 hours, 11.0 hours, 11.5 hours, 12.0 hours, 12.5 hours, 13.0 hours , 13.5 hours, 14.0 hours, 14.5 hours, 15.0 hours, 15.5 hours, 16.0 hours, 17.0 hours, 17.5 hours, 18.0 hours, 18.5 hours, 19.0 hours, 19.5 hours, 20.0 hours, 20.5 hours, 21.0 hours, 21.5 hours, 22.0 hours hours, 22.5 hours, 23.0 hours, 23.5 hours, 24.0 hours, 25.0 hours, 30.0 hours, 36.0 hours
- the range is preferably 1 minute to 24 hours, more preferably 30 minutes to 20 hours.
- the heating time can be appropriately set for each step. In this manufacturing method, it is not necessary to perform the heating step in a sealed state. Thus, the production of metal- and/or metalloid-containing sulfides in open systems is possible.
- the sample to be treated during heat treatment is vacuum-sealed in a quartz ampoule or the like to construct a closed system for heat treatment, or lithium sulfide or sodium sulfide and metal sulfide are heated.
- the present invention is a method for producing metal- and/or metalloid-containing sulfides that is different from conventional methods in that it is not necessary to seal the container during heating. Moreover, in this production method, the sulfur source is in the state of a melt. Therefore, the production time can be shortened compared to the reaction between solids, and the obtained sulfide is a highly homogeneous sulfide.
- the rate of temperature increase during heating is not particularly limited, and can be set as appropriate. 10°C/hour, 60°C/hour, 120°C/hour, 180°C/hour, 240°C/hour, 300°C/hour, 450°C/hour, 600°C/hour, 1200°C/hour, 1800°C/hour Time, 2400° C./hour, 3000° C./hour, 6000° C./hour. Of these, 60° C./hour to 3000° C./hour is preferable, and 300° C./hour to 1200° C./hour is more preferable. However, if the starting material contains elemental S, if the heating rate is high, the volatilization of S occurs before the formation of low-volatility sodium polysulfide.
- a speed and temperature ramp program is required.
- An example of the rate of temperature increase at which sodium polysulfide is sufficiently formed is preferably 1200° C./hour or less, more preferably 600° C./hour or less.
- a temperature rising program for sufficiently forming sodium polysulfide it is more preferable to have a temperature of 100° C. or more and 200° C. or less and a time of 10 minutes or more for sodium polysulfide and elemental S to react.
- the heating method is not particularly limited as long as the above heating rate can be achieved.
- an electric furnace, a hot plate, a muffle furnace, a high-frequency induction heating device, a rotary kiln, a sand bath, a salt bath, or the like can be used.
- the heating device preferably has a function of adjusting temperature and time.
- the second sodium polysulfide is preferably a second sodium polysulfide having an average composition of Na 2 S y (where 0 ⁇ y ⁇ 5), and Na 2 S y ( In the formula, it is preferably the second sodium polysulfide represented by 0 ⁇ y ⁇ 4), and the second sodium polysulfide represented by Na 2 S y (wherein 0 ⁇ y ⁇ 3) More preferably, it is the second sodium polysulfide represented by Na 2 S y (where 0 ⁇ y ⁇ 2.5).
- This heating step may be the same as the heating step for melting the first sodium polysulfide represented by Na 2 S x (where 1 ⁇ x ⁇ 5), or may be different. good. That is, from a mixture containing the second (poly)sodium sulfide represented by Na 2 S y (where 0 ⁇ y ⁇ 5) and elemental S, Na 2 S x (where 1 ) to obtain a melt of the first sodium polysulfide represented by ), and melting the first sodium polysulfide represented by Na 2 S x (where 1 ⁇ x ⁇ 5) If the heating step for is the same, the second (poly)sodium sulfide represented by Na 2 S y (where 0 ⁇ y ⁇ 5) is reacted with elemental S by heating.
- a first sodium polysulfide melt represented by Na 2 S x (where 1 ⁇ x ⁇ 5) can be used as both a reaction medium and a sulfur source.
- the heating conditions for reacting the mixture containing the second sodium (poly)sulfide represented by Na 2 S y (where 0 ⁇ y ⁇ 5) and elemental S are the above Na 2 S It can be set in the same manner as the heating step for melting the first sodium polysulfide represented by x (in the formula, 1 ⁇ x ⁇ 5) (especially conditions including elemental S).
- the mixture containing the second sodium (poly)sulfide represented by Na 2 S y (where 0 ⁇ y ⁇ 5) and elemental S may contain elemental Na.
- the second sodium polysulfide represented by Na 2 S y (where 0 ⁇ y ⁇ 5) is not particularly limited, but examples include Na 2 S, Na 2 S 2 , Na 2 S 3 and Na 2 S4 and the like.
- This manufacturing method may include a step of cooling the material after heating.
- the cooling method is not particularly limited, and cooling may be performed by natural cooling, or slow cooling or rapid cooling may be performed using an arbitrary cooling device.
- the cooling device for example, a liquid quench solidifying device, a quenched flake producing device, a liquid spinning device, a gas atomizing device, a water atomizing device, a rotating disk device, or the like can be used.
- the temperature drop rate during cooling is not particularly limited, and can be set as appropriate.
- temperature drop rate 3600000°C/hour, 1800000°C/hour, 600000°C/hour, 300000°C/hour, 200000°C/hour, 100000°C/hour, 60000°C/hour, 54000°C/hour, 48000°C/hour, 42000 °C/hour, 36000°C/hour, 30000°C/hour, 24000°C/hour, 20000°C/hour, 18000°C/hour, 15000°C/hour, 12000°C/hour, 6000°C/hour, 3000°C/hour, 2400 °C/hour, 1800°C/hour, 1200°C/hour, 900°C/hour, 600°C/hour, 300°C/hour, 240°C/hour, 180°C/hour, 120°C/hour, 60°C/hour, 10 It can be a range represented by a combination of arbitrary upper and lower limits selected from °C/hour.
- the metal- and/or metalloid-containing sulfide produced by this production method may or may not contain sodium. That is, its composition is represented by MS or Na-MS (M is a metal or metalloid of groups 3 to 16 of period 2 to period 6). Sulfides containing metals and/or metalloids also include oxysulfides.
- sodium-containing (non-oxysulfide ) metal and/or metalloid-containing sulfides include, for example, Na3BS3 , Na4SiS4 , Na3PS4 , 75Na4SiS4.25Na 5AlS4 , Na9SiAlS8 , Na5AlS4 , Na5GaS4 , Na4GeS4 , Na4SnS4 , 75Na3BS3 , 25Na4SiS4 , Na2.88Sb0.88W0.12S4 , Na2.85 _ _ Sb0.85W0.15S4 , Na2.82Sb0.82W0.18S4 , Na2.80Sb0.80W0.20S4 , Na2.88Sb0.88Mo0.12S4 , Na2.9375P0.9375W0.0675S4 , Na2 FeS2 , Na5 _ _ _ _ _ _ _
- sodium-containing metal and/or metalloid-containing oxysulfides examples include Na 3 BS 3 —SiO 2 , Na 3 BS 3 —Al 2 O 3 , 3Na 4 SiS 4 ⁇ Na 4 SiO 4 , etc.
- the metal and/or metalloid-containing sulfide is represented by the following formula (I) Na 3- ⁇ ⁇ 1- ⁇ ⁇ ⁇ S 4 (I) (In the formula, ⁇ is 0 ⁇ 1, ⁇ is one or more elements selected from Sb, P, As and Bi, and ⁇ is one or more elements selected from W, Mo and Cr. be) It may be a sodium-containing sulfide represented by.
- the metal and/or metalloid-containing sulfide is represented by the following formula (II) Na 3- ⁇ ⁇ 1- ⁇ ⁇ ⁇ S 4 (II) (wherein ⁇ is 0 ⁇ 1, ⁇ is one or more elements selected from Sb, As and Bi, and ⁇ is one or more elements selected from W, Mo and Cr) It may be a sodium-containing sulfide represented by.
- the metal and / or metalloid containing sulfide is represented by the following formula (III) Na3 - ⁇ Sb1 - ⁇ W ⁇ S4 ( III ) (wherein ⁇ is 0 ⁇ 1) It may be a sodium-containing sulfide represented by.
- the sodium-containing sulfides represented by the above formulas (I) to (III) have excellent ionic conductivity compared to conventional sodium-containing sulfides. ⁇ in the above formulas (I) to (III) preferably satisfies 0 ⁇ 0.2.
- the sodium-containing sulfides represented by formulas ( I ) to ( III ) include , for example , Na2.88Sb0.88W0.12S4 , Na2.85Sb0.85W0.15S4 , Na2.82Sb0.82W0.18S4 , Na2.80 Sb0.80W0.20S4 , Na2.88Sb0.88Mo0.12S4 , Na2.9375P0.9375W0.0675S4 and the like .
- the metal- and/or metalloid-containing sulfide obtained by this production method may be a crystalline substance or amorphous (glass).
- This production method may include a step of further heating the metal- and/or metalloid-containing sulfides of the glass obtained by the above production method.
- the heating temperature and heating time are as described above.
- Crystallized glass (glass ceramics) can be obtained by further heating the metal- and/or metalloid-containing sulfide of the glass.
- Glass-ceramics refer to materials having a glass phase and a (precipitated) crystal phase dispersed in the glass phase. Glass-ceramics can be formed, for example, by heating glass to a temperature above its glass transition point to crystallize (at least part of) the material. A glass transition point can be measured, for example, by differential thermal analysis (DTA). Confirm that the sulfides containing metals and/or metalloids are glass-ceramics by, for example, using a transmission electron microscope (TEM) to observe that multiple crystal phases are contained in the glass phase. can.
- TEM transmission electron microscope
- a crystalline metal- and/or metalloid-containing sulfide can be obtained, for example, by cooling the material after heating at a temperature-fall rate of 1000°C/hour or less.
- This temperature drop rate can be appropriately set according to the composition of the material after heating. It should be noted that this does not mean that it is essential to cool at a cooling rate of 1000° C./hour or less in order to obtain a crystalline metal- and/or metalloid-containing sulfide in the present embodiment.
- Amorphous metal- and/or metalloid-containing sulfides can be obtained, for example, by cooling the heated material at a temperature-fall rate of 100° C./min or more. However, this does not mean that it is essential to cool at a cooling rate of 100° C./min or more in order to obtain amorphous metal- and/or metalloid-containing sulfides in the present embodiment.
- Amorphous metal- and/or metalloid-containing sulfides can also be produced by using a crucible composed of an oxide as the crucible. Examples of crucibles made of oxides include SiO2 - Al2O3 crucibles and Al2O3 crucibles .
- the metal- and/or metalloid-containing sulfide produced by the flux method may be further washed with an organic solvent as necessary.
- an organic solvent either a hydrophilic organic solvent or a hydrophobic organic solvent may be used.
- hydrophilic organic solvents include methanol, ethanol, 1-propanol, 2-propanol, n-butyl alcohol, sec-butyl alcohol, isobutanol, tert-butyl alcohol, acetonitrile, acetone, and dimethylformamide. .
- hydrophobic organic solvents examples include aromatic hydrocarbons such as benzene, toluene or xylene, aliphatic hydrocarbons such as hexane, heptane or isooctane, dichloromethane, 1,2-dichloroethane, chloroform, 1-chlorobutane or chlorobenzene. , ethers such as diethyl ether and t-butyl methyl ether, and ketones such as methyl ethyl ketone and methyl isobutyl ketone.
- the produced metal- and/or metalloid-containing sulfide is added to and mixed with the above organic solvent, and then filtered to recover the metal and/or metalloid-containing sulfide.
- the filtering method is not particularly limited. Washing may be performed once or multiple times. A method such as centrifugation may also be used. After washing the metal- and/or metalloid-containing sulfide, a step of drying may be performed. Although the drying method is not particularly limited, the solvent can be removed by using, for example, a vacuum drying method.
- the material of the reaction vessel used in the heating step can be appropriately selected.
- materials for the reaction vessel include carbon, alumina, platinum, gold, zirconia, magnesia, quartz, mullite, silica, and iridium.
- the reaction vessel may be a crucible.
- the reaction vessel may be a reaction vessel made of one type of material, or may be a reaction vessel whose surface is coated.
- the surface-coated reaction vessel includes, for example, an alumina crucible with a carbon-coated surface, a crucible with an oxide-coated surface, and the like.
- the crucible may or may not have holes on its surface.
- the crucible may also be a porous crucible. Of these crucibles, crucibles made of carbon and/or oxides, or crucibles whose surfaces are made of carbon and/or oxides are preferred.
- the shape and size of the crucible can be appropriately selected.
- elements derived from the crucible components, such as oxygen, are metal and/or or contained in metalloid-containing sulfides.
- the amount of elements contained in the sulfides containing metals and/or metalloids is 50% by mass, 45% by mass, 40% by mass, 35% by mass, 34% by mass, and 33% by mass of the produced sulfides containing metals and/or metalloids.
- Oxygen-poor metal and/or metalloid-containing sulfides can be obtained, for example, by using a carbon crucible or a carbon-coated crucible as the reaction vessel.
- a step of further pulverizing or molding the metal- and/or metalloid-containing sulfide produced by the above-described production method may be included.
- metal and/or metalloid-containing sulfide pellets can be obtained by compression molding the metal- and/or metalloid-containing sulfide produced by the above-described production method using a press or the like.
- a step of further heating the amorphous metal and/or metalloid-containing sulfide produced by the above-described production method may be included.
- a metal- and/or metalloid-containing sulfide which is a glass ceramic, can be obtained by heating an amorphous metal- and/or metalloid-containing sulfide to a temperature higher than its glass transition point.
- the metal- and/or metalloid-containing sulfides produced by the above-described production method can be used as materials for various products such as batteries, semiconductors, ceramics, integrated circuits, substrates, optical glass, paints, and detectors.
- battery materials it can be contained in positive electrodes, positive electrode active materials, negative electrodes, negative electrode active materials, electrolytes, solid electrolytes, and the like.
- the present invention also provides a sodium-containing sulfide represented by formula (I) below.
- a sodium-containing sulfide represented by formula (I) below.
- Na 3- ⁇ ⁇ 1- ⁇ ⁇ ⁇ S 4 (I) (In the formula, ⁇ is 0 ⁇ 1, ⁇ is one or more elements selected from Sb, P, As and Bi, and ⁇ is one or more elements selected from W, Mo and Cr. be)
- ⁇ in the above formula (I) preferably satisfies 0 ⁇ 0.2.
- sodium-containing sulfides include Na 2.88 Sb 0.88 W 0.12 S 4 , Na 2.85 Sb 0.85 W 0.15 S 4 , Na 2.82 Sb 0.82 W 0.18 S 4 , Na 2.80 Sb 0.80 W 0.20 S 4 , Na 2.88 Sb 0.88 Mo 0.12 S 4 , Na 2.9375 P 0.9375 W 0.0675 S 4 and the like.
- the sodium-containing sulfide represented by the above formula (I) has a high ion conductivity of 1.0 ⁇ 10 ⁇ 3 S cm ⁇ 1 or more at 25° C., and is suitable as a battery material.
- the sodium-containing sulfide represented by the above formula (I) may be made into a sintered body by heat treatment.
- the heat treatment temperature is, for example, heating at a temperature in the range of 200°C to 1000°C.
- Electrode composite One embodiment of the invention provides an electrode assembly comprising a sodium-containing sulfide.
- the electrode composite may be a positive electrode composite or a negative electrode composite.
- the amount of the sodium-containing sulfide represented by the above formula (I) contained in the electrode assembly is not particularly limited, but is, for example, 80% by mass, 75% by mass, 70% by mass, 65% by mass, 60% by mass of the electrode assembly.
- % 55% by mass, 50% by mass, 45% by mass, 40% by mass, 35% by mass, 30% by mass, 25% by mass, 20% by mass, 15% by mass, 10% by mass, 8% by mass, 6% by mass, 5% by mass, 4% by mass, 3% by mass, 2.5% by mass, 2% by mass, 1.5% by mass, 1% by mass, 0.75% by mass, 0.5% by mass can be a range.
- the electrode composite includes a positive electrode active material (when the electrode composite is a positive electrode composite), a negative electrode active material (when the electrode composite is a negative electrode composite ), a binder, a conductive material, a solid electrolyte, and the like.
- the sodium-containing sulfide represented by the above formula (I) has ion conductivity and functions as a solid electrolyte.
- the positive electrode active material, negative electrode active material, binder, conductive material, and solid electrolyte are not particularly limited as long as they are commonly used in the relevant field.
- the amounts of the positive electrode active material and the negative electrode active material in the electrode assembly are not particularly limited, but are, for example, 95% by mass, 90% by mass, 85% by mass, 80% by mass, 75% by mass, 70% by mass, 65% by mass, and 65% by mass of the electrode assembly. Any upper and lower limits selected from % by mass, 60% by mass, 55% by mass, 50% by mass, 45% by mass, 40% by mass, 35% by mass, 30% by mass, 25% by mass, and 20% by mass It can be a range represented by a combination.
- the amounts of the binder, conductive material, and solid electrolyte in the electrode assembly are not particularly limited, but are, for example, 80% by mass, 70% by mass, 60% by mass, 50% by mass, and 40% by mass of the total mass of the electrode assembly. %, 30% by mass, 25% by mass, 20% by mass, 15% by mass, 10% by mass, 7% by mass, 5% by mass, 4% by mass, 3% by mass, 2.5% by mass, 2% by mass, 1.5% by mass, 1% by mass, 0.75% by mass, 0.5% by mass, 0.4% by mass, 0.3% by mass, 0.2% by mass, 0.1% by mass, 0.01% by mass
- a range represented by a combination of arbitrary upper and lower limits can do.
- the electrode composite can be obtained in the form of pellets by, for example, mixing an electrode active material and optionally a binder, a conductive material, an electrolyte, or the like, and pressing the resulting mixture.
- the pressure of the press may for example be selected from pressures in the range 50-2000 MPa.
- the present invention also provides an electrode in which the electrode and current collector are combined.
- the electrode assembly combined with the current collector is the electrode assembly of the present invention.
- the current collector is not particularly limited in terms of material, shape, etc., as long as it can be combined with the electrode composite of the present invention and can function as a current collector.
- the shape of the current collector may be a uniform alloy plate-like shape or a shape with holes. It may also be in the form of foil, sheet, or film.
- the electrode of the present invention may be formed by combining an electrode composite and a current collector, respectively, or may form an electrode composite directly on the current collector.
- the present invention provides a solid electrolyte containing a sodium-containing sulfide represented by formula (I) above.
- the solid electrolyte may consist only of the sodium-containing sulfide represented by the above formula (I), or may be composed of a binder, a conductive material generally used in the field, or It may contain a solid electrolyte other than the sodium-containing sulfide.
- the amount of the sodium-containing sulfide represented by the above formula (I) contained in the solid electrolyte is not particularly limited, but is, for example, 100% by mass, 99% by mass, 98% by mass, 97% by mass of the total mass of the solid electrolyte. , 95% by mass, 90% by mass, 80% by mass, 70% by mass, 60% by mass, 50% by mass, 40% by mass, 30% by mass, 25% by mass, 20% by mass, 15% by mass, 10% by mass, 8 %, 6% by mass, 5% by mass, 4% by mass, 3% by mass, 2.5% by mass, 2% by mass, 1.5% by mass, and 1% by mass. can be a range.
- the amount of the binder, the conductive material, and the solid electrolyte other than the sodium-containing sulfide represented by the above formula (I) is not particularly limited. 25% by mass, 20% by mass, 15% by mass, 10% by mass, 8% by mass, 6% by mass, 5% by mass, 4% by mass, 3% by mass, 2.5% by mass, 2% by mass, 1.5% by mass, 1% by mass %, 0.75% by mass, 0.5% by mass, 0.4% by mass, 0.3% by mass, 0.2% by mass, 0.1% by mass, and 0.01% by mass. can be done.
- the invention provides a battery comprising the solid electrolyte, electrode composite or electrode of the invention.
- the electrode of the battery using the solid electrolyte of the present invention or the electrode combined with the electrode of the present invention is not particularly limited as long as Na can be exchanged as mobile ions, and electrodes commonly used in the relevant field are used. be able to.
- a metal- and/or metalloid-containing sulfide produced by this production method may be used together with the sulfide.
- the amount of the metal- and/or metalloid-containing sulfide produced by this production method used in the electrode active material, electrode composite, electrode, battery, and solid electrolyte is the same as the sodium-containing sulfide represented by the above formula (I). can be In addition, when using both the metal and/or metalloid-containing sulfide produced by the present production method and the sodium-containing sulfide represented by the above formula (I), the content using the total amount of each used to calculate
- the present invention provides a method for producing an all-solid-state sodium battery, which comprises forming an electrode layer and/or a solid electrolyte layer using the sodium-containing sulfide produced by the present production method. Formation of the electrode layer and/or the solid electrolyte layer can be achieved, for example, by laminating an electrode layer (positive electrode layer), a solid electrolyte layer, and an electrode layer (negative electrode layer) and pressing to obtain a cell, which is then It can be obtained fixed to a container.
- the electrodes and solid electrolyte used for the electrode layer and the solid electrolyte layer are as described above.
- Item 1 A melt obtained by heating the first sodium polysulfide represented by Na 2 S x (wherein 1 ⁇ x ⁇ 5) is used as a reaction medium and a sulfur source to convert metals and/or metalloids into A method for producing a metal- and/or metalloid-containing sulfide, characterized in that the contained sulfide (wherein said metal is neither an alkali metal nor an alkaline earth metal) is synthesized under normal pressure.
- the melt is produced by a step of heating a mixture containing a second sodium (poly)sulfide represented by Na 2 S y (0 ⁇ y ⁇ 5) and elemental S. the method of.
- Item 3 The first or second sodium polysulfide and one or more single elements of the metals and/or metalloids or one or more compounds containing the metals and/or metalloids for synthesizing the metal and/or Item 3.
- Item 4 Item 4. The method according to any one of Items 1 to 3, wherein the heating step is performed in an open reaction vessel.
- Item 5 Item 5. The method according to any one of Items 1 to 4, wherein the heating step is performed under an inert atmosphere.
- Item 6 Item 6. The method according to any one of Items 1 to 5, wherein the heating step is performed at a temperature within the range of 400°C to 1000°C.
- Item 7 Item 7. The method according to any one of Items 1 to 6, wherein the process is carried out in a reaction vessel in which at least the surface in contact with the first or second sodium polysulfide is composed of carbon.
- Item 8 a step of melting the metal- and/or metalloid-containing sulfide sulfide by a heating step; 7. The method according to any one of Items 1 to 6.
- Item 9 9. The method according to any one of Items 1 to 6 and 8, which is carried out in a reaction vessel composed of carbon or oxide.
- Item 10 Item 10. The method according to any one of Items 1 to 9, wherein the first sodium polysulfide is sodium polysulfide represented by Na 2 S x (where 1.5 ⁇ x ⁇ 2.5).
- Item 11 The method according to any one of items 3 or 4 to 10 citing item 3, wherein the compound is an oxide and/or a nitride.
- Item 12 Item 12. The method according to any one of Items 1 to 11, wherein the metal and/or metalloid-containing sulfide further contains sodium. Item 13 Item 13. The method according to Item 12, which is a self-flux method. Item 14 14. The method according to any one of Items 1 to 13, wherein the sulfide containing the metal and/or metalloid is an oxysulfide. Item 15 The metals and/or semimetals are one metal or semimetal or two or more metals and/or metals selected from Groups 5 to 16 of the 2nd to 6th periods Item 15. The method according to any one of Items 1 to 14, which is a metalloid.
- Item 16 said metal and/or metalloid is B, Al, Si, P, Zn, Ga, Ge, As, Se, Cd, In, Sn, Sb, Te, Tl, Pb, Bi, V, Cr, Mn, Nb, Item 16.
- the metal and/or metalloid-containing sulfide has the following formula (I) Na 3- ⁇ ⁇ 1- ⁇ ⁇ ⁇ S 4 (I) (In the formula, ⁇ is 0 ⁇ 1, ⁇ is one or more elements selected from Sb, P, As and Bi, and ⁇ is one or more elements selected from W, Mo and Cr. be) Item 17.
- ⁇ is 0 ⁇ 1, ⁇ is one or more elements selected from Sb, P, As and Bi, and ⁇ is one or more elements selected from W, Mo and Cr. be) Item 17.
- Item 18 Formula (I) below Na 3- ⁇ ⁇ 1- ⁇ ⁇ ⁇ S 4 (I) (In the formula, ⁇ is 0 ⁇ 1, ⁇ is one or more elements selected from Sb, P, As and Bi, and ⁇ is one or more elements selected from W, Mo and Cr. be)
- a solid electrolyte or electrode assembly comprising the sodium-containing sulfide according to Item 18.
- Item 20 An electrode layer and/or a solid electrolyte layer is formed using the sodium-containing sulfide produced by the method according to any one of Items 14 to 17 directly or indirectly quoting Item 12 or 13.
- a method for manufacturing a sodium ion all-solid-state battery is described below.
- Na 2 S is manufactured by Nagao Corporation (purity of 99.1% or higher)
- B is manufactured by Kojundo Chemical Laboratory Co., Ltd. (purity of 99% or higher)
- S is manufactured by Kojundo Chemical Laboratory Co., Ltd. (purity of 99.1% or higher).
- 99.99% or more Al manufactured by FUJIFILM Wako Pure Chemical Co., Ltd. (99.5% or more purity), Si manufactured by FUJIFILM Wako Pure Chemical Co., Ltd.
- Ga is manufactured by Nilaco Corporation (purity of 99.9999% or higher)
- Ge is manufactured by Nilaco Corporation (purity of 99.999% or higher)
- Sn is manufactured by Sigma-Aldrich (purity of 99% or higher)
- Sb is manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd. (purity of 99.99 % or more )
- Mo is from Nilaco (99.9% purity)
- W is from Nilaco (99.95% purity
- Sb2S3 is from Nippon Seiko (98% or more purity
- WS2 is from Aldrich ( 99% purity)
- MoS2 from Aldrich SnS2 from Mitsuwa Chemical Co., Ltd.
- Pulverisette P-7 manufactured by Fritsch was used as a planetary ball mill.
- BTS-2004 a charge/discharge measuring device manufactured by Nagano Co., Ltd. was used for the constant current cycle test.
- An X-ray diffractometer a fully automatic multi-purpose X-ray diffractometer SmartLab manufactured by Rigaku was used.
- a muffle furnace manufactured by Denken was used.
- the present invention provides a novel method for synthesizing alkali metal-containing sulfides, which is different from conventional methods.
- Heating conditions (1) Heated from room temperature to 700°C at a rate of 100°C/hour. (2) A state of 700°C was maintained for 12 hours. (3) Cooled to 500°C at a rate of 50°C/hour. (4) Cooled from 500°C to room temperature over 10 hours.
- Comparative Example 1 Na 3 BS 3 by conventional method
- Na 3 BS 3 was obtained by conventional methods.
- the weighed samples were mixed, and the weighed samples were crushed and mixed for about 5 to 10 minutes using a mortar and pestle dried at 50° C. for half a day or longer.
- the mixed sample is placed in a carbon crucible (outer diameter: 7.0mm, inner diameter: 5.0mm), vacuum-sealed in a quartz ampoule (outer diameter: 10.0mm, inner diameter: 7.9mm), and the ampoule is placed in a Denken muffle furnace. heat treated.
- the heat treatment conditions are the same as in Example 1. This gave Na 3 BS 3 .
- Example 2 Preparation of metal- and/or metalloid-containing sulfides using sodium polysulfide as a flux 2 SiO2 - Al2O3 -added Na3BS3 was prepared in the same manner as in Example 1 except that the crucible was changed from a carbon crucible to a SiO2 - Al2O3 crucible ( outer diameter: 7.0 mm, inner diameter: 5.0 mm). Obtained.
- Example 3 Preparation of metal- and/or metalloid-containing sulfides using sodium polysulfide as a flux3 Na 3 BS 3 was obtained in the same manner as in Example 1 except that the crucible was changed from a carbon crucible to an Al 2 O 3 crucible (outer diameter: 7.0 mm, inner diameter: 5.0 mm).
- Na 3 BS 3 can be formed by the method of Example 1 as well as by the conventional method such as Comparative Example 1.
- SiO 2 —Al 2 O 3 -added Na 3 BS 3 in a glass state can be formed by using an oxide crucible. From these results, it was shown that an alkali metal (sodium)-containing sulfide can be obtained without vacuum sealing in a quartz ampoule. Doping of Si, Al, and O into the sample of Example 2 was confirmed by X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM-EDX) observation with an energy dispersive X-ray spectrometer.
- XPS X-ray photoelectron spectroscopy
- SEM-EDX scanning electron microscope
- composition ratio of each Na 3 BS 3 prepared was measured using an elemental analyzer.
- CHNS elemental analysis VarioEL cube was used as an elemental analyzer.
- Example 2 Although the composition of S is reduced, this is because oxygen originating from the crucible of the oxide was included and an oxysulfide was formed.
- Example 9 Preparation of metal- and/or metalloid-containing sulfides using sodium polysulfide as a flux9 Na 4 SnS 4 was obtained in the same manner as in Example 1 except that Na 2 S, S, and Sn were weighed so that the molar ratio of Na 2 S:Sn:S was 2:1:2. rice field.
- FIGS. 2A to 2C The results of XRD measurement of each sodium-containing sulfide produced in Examples 4 to 10 are shown in FIGS. 2A to 2C, respectively.
- FIG. 2A shows measurement results of Examples 4 to 6
- FIG. 2B shows measurement results of Examples 7 to 9
- FIG. 2C shows measurement results of Examples 6 and 10, respectively.
- (*) in FIGS. 2A to 2C are theoretical values or crystal structures of sodium-containing sulfides described in previous reports [Harm S. and Bettina V. Lotsch et al., Frontiers in Chemistry, 8:90 (2020).] be.
- 2A to 2C show that sodium-containing sulfides can be obtained using various elements such as Si, Al, Ga, and Ge.
- the ionic conductivity ( ⁇ ) and activation energy (E a ) of the sodium-containing sulfides of Examples 2, 4 and 6 were measured.
- the AC impedance was measured using an impedance analyzer (SI-1260) by preparing a polycasell (polycarbonate cell) as follows. SKD was used as the current collector, and polycarbonate with an inner diameter of 10 mm was used as the insulator. 150 mg of each powder sample was weighed and added into the rod, and pellets were produced by uniaxially pressing at 360 MPa for 5 minutes using a hydraulic press. The shaft and rod were fixed together by crimping with screws, placed in a glass container, and sealed with a rubber plug.
- the measurement frequency is 0.1 Hz to 1 ⁇ 10 6 Hz
- the AC amplitude is 10 mV
- the intersection point of the semicircle of the obtained impedance plot and the real axis is taken as the resistance R ( ⁇ ) of the sample
- the ionic conductivity ⁇ (S cm ⁇ 1 ) is taken as the resistance R ( ⁇ ) of the sample
- ⁇ the resistance of the sample
- ⁇ the ionic conductivity
- the activation energy was calculated from the following formula, assuming that the ionic conductivity measured at each temperature and the reciprocal of the absolute temperature were plotted against the temperature dependence of the ionic conductivity, according to the Arrhenius law.
- Fig. 3 shows an Arrhenius plot based on the measured ionic conductivity.
- Table 2 shows the ionic conductivity and activation energy at room temperature. Previous reports in Table 2 are measured values described in [Harm S. and Bettina V. Lotsch et al., Frontiers in Chemistry, 8:90 (2020).].
- FIG. 4 shows the results of XRD measurements on the sodium-containing sulfide samples of Examples 11-13.
- FIG. 4 shows that sodium-containing sulfides (oxysulfides) can be produced by the method of the present invention even if oxides are added.
- the oxysulfide obtained was amorphous.
- Example 15 Preparation of metal- and/or metalloid-containing sulfides using sodium polysulfide as a flux15 Na 4 SiS 4 ( rapidly things).
- Example 16 Preparation of metal- and/or metalloid-containing sulfides using sodium polysulfide as a flux16 Na 5 AlS 4 ( quenched things).
- FIG. 5 shows the results of XRD measurements performed on the sodium-containing sulfide samples of Examples 14-16. From FIG. 5, it can be understood that the sodium-containing sulfide samples of Examples 14-16 are all in an amorphous state. From this, it was shown that an amorphous sodium-containing sulfide can be produced by performing a quenching operation regardless of the elements added.
- Heating conditions (1) Heated from room temperature to 450°C at a rate of 100°C/hour. (2) A state of 450°C was maintained for 12 hours. (3) Heated up to 500°C at a rate of temperature increase of 50°C/hour. (4) Cooled from 500°C to room temperature over 10 hours.
- Example 18 Preparation of metal- and/or metalloid-containing sulfides using sodium polysulfide as a flux18 Na 2.88 Sb 0.88 W 0.12 S 4 was obtained in the same manner as in Example 17 except that the amount of sample to be treated was changed from 0.5 g to 5.0 g.
- Example 19 Preparation of metal- and/or metalloid-containing sulfides using sodium polysulfide as a flux19
- Na2.85Sb0.85W0.15S4 was obtained .
- Example 22 Production of glass - ceramic Na2.88Sb0.88W0.12S4 by conventional method
- Glass-ceramic Na2.88Sb0.88W0.12S4 was produced by the conventional method according to the following procedure .
- Na 2 S, Sb 2 S 3 , S (where S is manufactured by Aldrich (purity of 99.98% or more) and WS 2 were each mixed with a composition of Na 2.88 Sb 0.88 W 0.12 S 4 and charged into a planetary ball mill. After the addition, mechanical milling was performed to obtain glassy Na 2.88 Sb 0.88 W 0.12 S 4.
- the planetary ball mill was a Fritsch Pulverisette P-7, and the pot and balls were made of ZrO 2 .
- FIGS. 6 and 7 show the results of Examples 17, 19-21. From FIGS. 6 and 7, it was found that a pattern attributed to Na 3 SbS 4 having a cubic crystal structure was observed regardless of the amount of W added. It was shown that the method of the present invention can produce a Na 3- ⁇ ⁇ 1- ⁇ ⁇ ⁇ S 4 -based sodium-containing sulfide with a targeted composition regardless of the amount of W added.
- the ionic conductivity ( ⁇ ) and activation energy (E a ) were measured using the sodium-containing sulfides of Examples 17-22. These measurements were performed in the same manner as described above. For the sample of Example 17, measurements were also carried out on the pressure applied from 360 MPa to 720 MPa. The sodium-containing sulfide pellets of Examples 17 to 22 were heated at a temperature of 275° C. for 1.5 hours to prepare sintered bodies, which were used for measurement. The measurement results are shown in FIG. 8 and Table 3.
- the sodium-containing sulfides produced by the method of the present invention have extremely excellent ionic conductivity.
- the samples of Examples 17 and 18, which are pelletized under high pressure and sintered have a high ionic conductivity of 1.0 ⁇ 10 ⁇ 2 or more. This is a higher ionic conductivity than conventionally known sodium-containing sulfides. Therefore, Na 3- ⁇ ⁇ 1- ⁇ ⁇ ⁇ S 4 -based sodium-containing sulfides are particularly suitable as battery materials.
- Example 23 Preparation of metal- and/or metalloid-containing sulfides using sodium polysulfide as a flux22 Na2.88Sb0.88W0.12S4 of Example 22 was obtained in the same manner as in Example 17 except that the heat treatment temperature was changed from 450 °C to 550°C.
- Example 24 Preparation of metal- and/or metalloid-containing sulfides using sodium polysulfide as a flux23 Na 2.88 Sb 0.88 Mo 0.12 S 4 was obtained in the same manner as in Example 17 except that W was replaced by Mo.
- Fig. 9 shows the results of XRD measurement on the sodium-containing sulfide samples of Examples 17, 23 and 24. From FIG. 9, it was shown that sodium-containing sulfide can be obtained by the method of the present invention even when Mo is used.
- FIG. 10 shows the results of XRD measurements performed on the sodium-containing sulfide samples of Examples 25 and 26.
- FIG. 10 shows measurements of Na 2.85 P 0.85 W 0.15 S 4 prepared by a conventional method in the same manner as in Example 22 except that Na 2 S, P 2 S 5 , S, and WS 2 were used as starting materials. The results are also shown. From FIG. 10, it was shown that sodium-containing sulfides can be obtained by the method of the present invention even when P is used.
- a mixture of Na 2 S and S or a mixture of Li 2 S and S is prepared and heated, subjected to simultaneous thermogravimetric and differential thermal analysis (TG-DTA), and the weight change and DTA curve of each mixture are measured. compared.
- TG-DTA simultaneous thermogravimetric and differential thermal analysis
- a sample in which Na 2 S and S or Li 2 S and S were mixed in a molar ratio of 1:1 was used.
- the sample was placed in a thermogravimetry/differential calorimeter under an N 2 stream, and the temperature was measured at a temperature elevation rate of 2°C/min or 10°C/min.
- FIG. 11A shows the results of TG-DTA measurement for a mixture of Na2S and S at a heating rate of 2°C
- Fig. 11B shows a mixture of Na2S and S at a heating rate of 10°C
- FIG. 12A shows the results of TG-DTA measurement on a mixture of Li 2 S and S at a heating rate of 2° C., respectively.
- FIG. 12B is an enlarged view of part of FIG. 12A. From FIG. 11A, it can be seen that no weight change was observed in the mixture of Na 2 S and S upon heating, and an endothermic peak due to melting of Na 2 S 2 was observed at 463°C.
- the results are shown in FIG. From FIG. 13, even with the mixture of Na 2 S, S, and B, no decrease in weight was confirmed during the measurement, as was the case with the mixture of Na 2 S and S.
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Abstract
Description
リチウムイオン電池やナトリウムイオン電池について近年様々な研究が世界中で進められ、優れた性質を有した新規金属材料が開発されるとともに、新規金属材料の量産化にむけた製造方法についての研究も進められている。
かくして、本発明によれば、Na2Sx(式中、1<x≦5)で表される第1の多硫化ナトリウムを加熱することにより得ることができる融液を反応媒体かつ硫黄源として、金属及び/又は半金属を含有する硫化物(ただし、金属はアルカリ金属でもアルカリ土類金属でもない)を常圧下で合成することを特徴とする、金属及び/又は半金属含有硫化物の製造方法が提供される。
Na3-δα1-δβδS4 (I)
(式中、δは0<δ<1であり、αはSb、P、As及びBiから選択される1以上の元素であり、βはW、Mo及びCrから選択される1以上の元素である)で表される、ナトリウム含有硫化物が提供される。
本発明は、Na2Sx(式中、1<x≦5)で表される第1の多硫化ナトリウムを加熱することにより得ることができる融液を反応媒体かつ硫黄源として、金属及び/又は半金属を含有する硫化物(ただし、前記金属はアルカリ金属でもアルカリ土類金属でもない)を常圧下で合成することを特徴とする、金属及び/又は半金属含有硫化物の製造方法を提供する(以下、単に本製造方法とも呼ぶ)。
1つの具体的な実施形態において、本発明は、Na2Sx (式中、1<x≦5)で表される第1の多硫化ナトリウムを加熱することにより得ることができる融液を反応媒体かつ硫黄源として、Na及びMを含有する複合硫化物(Mはアルカリ金属でもアルカリ土類金属でもない1種以上の金属及び/又は半金属)を常圧下で合成することを特徴とするNa-M含有硫化物の製造方法を提供する。
析出した結晶の形状としては特に限定されず、例えば針状、樹状又は板状であってもよい。また、結晶の大きさも特に限定されない。
第2周期~第6周期の第3族~第16族の金属又は半金属としては、具体的には、B、Al、Si、P、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Ge、As、Se, Y、Zr、Nb、Mo、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Te、La、Ta、W、Re、Ir、Tl、Pb及びBiが挙げられ、より具体的にはB、Al、Si、P、Zn、Ga、Ge、As、Se、Cd、In、Sn、Sb、Te、Tl、Pb、Bi、V、Cr、Mn、Nb、Mo、Tc、Ta、W及びReが挙げられる。このうち、B, Al, Si, Ga, Ge, Sn, Sb, O, As, Bi, W, Mo及びCrから選択されるのが好ましく、B, Al, Si, Ga, Ge, Sn, Sb, P, W, Moから選択されることがより好ましい。
金属又は半金属の単体としては、上述した金属又は半金属が挙げられる。金属又は半金属の単体は1種のみ使用されていてもよく、2種以上を使用してもよい。2種以上の金属の組み合わせは、上述した金属又は半金属の任意の組み合わせが考えられるが、Sb, P, As, Bi, W, Mo, Cr, Si, B及びAlから少なくとも1種以上選択されることが好ましく、Sb, P, As, Bi, W, Mo及びCrから少なくとも1種以上選択されることがより好ましく、Sb, P, As, Bi, W, Mo, Cr, Si, B及びAlから選択されるのがより好ましく、Sb, P, As, Bi, W, Mo及びCrから選択されるのがより好ましく、Sb, P, As, Biから少なくとも1種以上選択され且つW, Mo, Crから少なくとも1種以上選択されるのがより好ましく、Sb, P, As, Biから1種、W, Mo, Crから1種選択した組み合わせであることがより好ましく、SbとWの組み合わせ、SbとMoの組み合わせ及びPとWの組み合わせであることがより好ましい。
具体的にはB2S3、Al2S3、SiS、SiS2、P4S3、P2S5、P4S7、P4S5、TiS2、VS、V3S4、VS2、V2S5、CrS、Cr2S3、CrS2、CrS3、MnS、MnS2、MnS3、FeS、Fe3S4、FeS2、FeS3、CoS、CoS2、Ni3S2、NiS、Ni3S4、NiS2、Cu2S、CuS、CuS2、CuS3、Zn2S、ZnS、ZnS2、ZnS3、Ga2S3、GeS2、GeS、As2S3、As4S4、As2S5、SeS2、SeS6、Y2S3、ZrS2、NbS、NbS2、MoS、MoS2、RuS2、Rh2S3、PdS、Ag2S、CdS、InS、SnS、SnS2、Sb2S3、TeS2、La2S3、TaS、TaS2、TaS3、WS、WS2、WS3、ReS2、IrS2、TI2S、PbS、PbS2、BiS、Bi2S3等が挙げられる。
具体的にはBSe、Al2Se3、PSe、TiSe、TiSe2、TiSe3、VSe、VSe2、VSe3、CrSe、Cr2Se3、CrSe2、CrSe3、MnSe、MnSe2、MnSe3、FeSe、Fe2Se3、FeSe2、FeSe3、CoSe、CoSe2、CoSe3、Co2Se3、Co3Se4、NiSe、NiSe2、NiSe3、Cu2Se、CuSe、CuSe2、CuSe3、ZnSe、ZnSe2、ZnSe3、GaSe、Ga2Se3、GeSe、GeSe2、Y2Se3、ZrSe2、NbSe、NbSe2、NbSe3、PbSe、PbSe2、CdSe、InSe、In2Se、In2Se3、SnSe、SnSe2、Sb2Se3、TaSe2、La2Se3、TaSe、TaSe2、TaSe3、WSe、WSe2、WSe3、ReSe2、IrSe、TI2Se、ZnSe、PbSe、Bi2Se3等が挙げられる。
具体的には、BF3、BCl3、B4Cl4、B2Cl4、BBr3、BI3、AlF3、AlCl3、AlBr3、AlI3、SiF4、SiCl3、SiCl4、Si4Cl10、Si5Cl12、Si6Cl12、SiBr4、Si2Br6、SiI4、PCl3、PCl5、PBr3、PBr5、PI3、PI5、TiF4、TiCl3、TiCl4、TiBr4、TiI4、VF5、VCl2、VCl4、VCl5、VBr3、VI3、CrCl2、CrCl3、CrCl4、CrBr3、CrI3、MnF2、MnCl2、MnBr2、MnI2、FeF3、FeCl2、FeCl3、FeBr2、FeBr3、FeI2、CoF2、CoF3、CoCl2、CoCl3、CoBr2、CoBr3、CoI2、CoI3、NiF2、NiCl2、NiCl4、NiBr2、NiI2、CuF、CuF2、CuCl、CuCl2、CuBr、CuBr2、CuI、CuI2、ZnF2、ZnCl2、ZnBr2、ZnI2、GaF3、GaCl3、GaBr3、GaI3、GeCl2、GeCl4、GeBr2、GeBr4、GeI2、GeI4、AsF3、AsCl3、AsCl5、AsBr3、AsI3、SeCl4、SeBr4、SeI4、YF3、YCl3、YBr3、YI3、ZrF4、ZrCl4、ZrBr4、ZrI4、NbF5、NbCl5、NbBr5、NbI5、MoF6、MoCl3、MoCl5、MoBr2、MoBr3、MoI3、RuF5、RuF6、RuCl3、RuBr3、RuI3、RhCl3、RhBr3、RhI3、PdF2、PdF4、PdCl2、PdBr2、PdI2、Ag2F、AgF、AgF2、AgF3、AgCl、AgBr、AgI、CdF2、CdCl2、CdBr2、CdI2、InF3、InCl、InCl3、In5Cl9、In2Cl3、InBr3、InI3、SnF4、SnCl2、SnCl4、SnBr2、SnBr4、SnI2、SnI4、SbF3、SbF5、SbCl3、SbCl5、SbBr3、SbBr5、SbI3、TeCl4、TeBr2、TeBr4、TeI4、LaF3、LaCl3、LaBr3、LaI3、TaF5、TaCl5、TaBr5、TaI5、WF6、WCl6、WBr5、WBr6、WI3、ReF6、Re2Cl10、ReBr3、ReBr5、IrF6、IrCl3、IrBr3、IrI4、TIF、TICl、TIBr、TII、PbF2、PbF4、PbCl2、PbCl4、PbBr2、PbI2、BiF3、BiCl3、BiBr3、BiI3等が挙げられる。
メカノケミカル処理の処理装置としては、機械的エネルギーを付与しつつ混合できるものであれば特に限定されず、例えばボールミル、ビーズミル、ジェットミル、振動ミル、ディスクミル、ターボミル、メカノフュージョンなどが使用できる。
加熱温度は特に限定されないが、多硫化ナトリウムの融点以上沸点以下であることが好ましい。加熱温度は、用いる多硫化ナトリウムや目的物質、反応容器の耐熱性等に応じて適宜設定し得るが、例えば、50℃、60℃、70℃、80℃、90℃、100℃、110℃、120℃、140℃、150℃、160℃、180℃、200℃、220℃、240℃、250℃、260℃、280℃、300℃、320℃、340℃、350℃、360℃、380℃、400℃、420℃、440℃、450℃、480℃, 500℃、550℃、600℃、650℃、700℃、750℃、800℃、850℃、900℃、950℃、999℃、1000℃、1100℃、1200℃、1300℃から選択される任意の上限値及び下限値の組み合わせで表される範囲とすることができる。このうち、150℃~1200℃の範囲であることが好ましく、200℃~1000℃の範囲であることがより好ましく、300℃~800℃の範囲であることがより好ましく、350℃~700℃の範囲であることがより好ましい。
加熱は、一度のみ行っても複数回行ってもよい。複数回行う場合は、それぞれの加熱温度が150℃~1200℃の範囲であることが好ましく、200℃~1000℃の範囲であることがより好ましく、300℃~800℃の範囲であることがより好ましく、350℃~700℃の範囲であることがより好ましい。
例えば、加熱を2回行う場合であれば、一度目の加熱と二度目の加熱との間には冷却工程があってもなくてもよい。二回目の加熱は一回目の加熱より高い温度で行ってもよいし、低い温度で行ってもよい。
本製造方法では、加熱工程を密封下で行う必要がない。つまり開放系での金属及び/又は半金属含有硫化物の製造が可能である。従来の方法では、硫黄の揮発を避けるために、熱処理時に処理される試料を石英アンプル等に真空封入して密閉系を構築して加熱処理する、あるいは硫化リチウムまたは硫化ナトリウムと金属硫化物とを用いてガスフロー下で熱処理することで合成されていた。本発明では、加熱時に容器を密閉する必要がない点で、従来法とは異なる金属及び/又は半金属含有硫化物の製造方法である。また、本製造方法では、硫黄源は融液の状態である。そのため、固体同士の反応に比べて製造時間を短縮でき、また得られる硫化物は均質性の高い硫化物となる。
この加熱工程は、Na2Sx(式中、1<x≦5)で表される第1の多硫化ナトリウムを溶融するための加熱工程と同じであってもよいし、別であってもよい。すなわち、Na2Sy (式中、0<y<5)で表される第2の(多)硫化ナトリウムと、単体Sとを含む混合物からNa2Sx (式中、1<x≦5)で表される第1の多硫化ナトリウムの融液を得るために加熱する工程と、Na2Sx (式中、1<x≦5)で表される第1の多硫化ナトリウムを溶融するための加熱工程とが同じであれば、加熱によりNa2Sy (式中、0<y<5)で表される第2の(多)硫化ナトリウムと、単体Sとを反応させて得られたNa2Sx (式中、1<x≦5)で表される第1の多硫化ナトリウムの融液を、反応媒体かつ硫黄源とすることができる。Na2Sy (式中、0<y<5)で表される第2の(多)硫化ナトリウムと、単体Sとを含む混合物を加熱により反応させるための加熱条件は、上述したNa2Sx (式中、1<x≦5)で表される第1の多硫化ナトリウムを溶融するための加熱工程(特に単体Sを含む条件)と同様に設定することができる。また、Na2Sy(式中、0<y<5)で表される第2の(多)硫化ナトリウムと、単体Sとを含む混合物は単体のNaを含んでいてもよい。
Na2Sy(式中、0<y<5)で表される第2の多硫化ナトリウムとしては、特に制限されないが、例えば、Na2S、Na2S2、Na2S3、Na2S4等が挙げられる。
ナトリウムを含有する(酸硫化物でない) 金属及び/又は半金属含有硫化物(ナトリウム含有硫化物)としては、例えばNa3BS3、Na4SiS4、Na3PS4、75Na4SiS4・25Na5AlS4、Na9SiAlS8、Na5AlS4、Na5GaS4、Na4GeS4、Na4SnS4、75Na3BS3・25Na4SiS4、Na2.88Sb0.88W0.12S4、Na2.85Sb0.85W0.15S4、Na2.82Sb0.82W0.18S4、Na2.80Sb0.80W0.20S4、Na2.88Sb0.88Mo0.12S4、Na2.9375P0.9375W0.0675S4、Na2FeS2、Na5FeS4、Na3NbS4、Na3TaS4、Na6MnS4、Na3Cu4S4等が挙げられる。
ナトリウムを含有する金属及び/又は半金属含有酸硫化物(ナトリウム含有硫化物)としては、例えばNa3BS3-SiO2、Na3BS3-Al2O3、3Na4SiS4・Na4SiO4等が挙げられる。
Na3-δα1-δβδS4 (I)
(式中、δは0<δ<1であり、αはSb、P、As及びBiから選択される1以上の元素であり、βはW、Mo及びCrから選択される1以上の元素である)
で表されるナトリウム含有硫化物であってもよい。
Na3-δα1-δβδS4 (II)
(式中、δは0<δ<1であり、αはSb、As及びBiから選択される1以上の元素であり、βはW、Mo及びCrから選択される1以上の元素である)
で表されるナトリウム含有硫化物であってもよい。
Na3-δSb1-δWδS4 (III)
(式中、δは0<δ<1である)
で表されるナトリウム含有硫化物であってもよい。
上記式(I)~(III)のδは0<δ≦0.2であることが好ましい。上記式(I)~(III)で表されるナトリウム含有硫化物としては、例えばNa2.88Sb0.88W0.12S4、Na2.85Sb0.85W0.15S4、Na2.82Sb0.82W0.18S4、Na2.80Sb0.80W0.20S4、Na2.88Sb0.88Mo0.12S4、Na2.9375P0.9375W0.0675S4等が挙げられる。
ガラスセラミックスとは、ガラス相と該ガラス相中に分散した(析出)結晶相を有する材料をいう。ガラスセラミックスは、例えば、ガラスを、そのガラス転移点以上の温度で加熱してその材料(の少なくとも一部)を結晶化させることによって形成することができる。ガラス転移点は、例えば、示差熱分析(DTA)により測定することができる。
金属及び/又は半金属含有硫化物がガラスセラミックスであることは、例えば、透過型電子顕微鏡(TEM)を用いて、ガラス相中に複数の結晶相が含まれていることを観察することによって確認できる。
金属及び/又は半金属含有硫化物を洗浄後、乾燥させる工程を行ってもよい。乾燥方法としては特に限定されないが、例えば減圧乾燥法を用いて溶媒を除くことができる。
反応容器は、一種類の材料による反応容器であってもよいし、表面がコーティングされた反応容器であってもよい。表面がコーティングされた反応容器としては、例えばアルミナ製の坩堝の表面が炭素コーティングされた坩堝や坩堝表面が酸化物でコーティングされた坩堝などが挙げられる。坩堝は表面に孔を有さないものであっても、孔を有していてもよい。また坩堝は多孔質の坩堝であってもよい。
これらの坩堝の内、炭素及び/又は酸化物の坩堝、あるいは表面が炭素及び/又は酸化物で構成された坩堝であることが好ましい。坩堝の形状や大きさは適宜適切に選択できる。
酸素の少ない金属及び/又は半金属含有硫化物は、例えば反応容器として炭素坩堝又は炭素コーティングされた坩堝を用いることで得ることができる。
Na3-δα1-δβδS4 (I)
(式中、δは0<δ<1であり、αはSb、P、As及びBiから選択される1以上の元素であり、βはW、Mo及びCrから選択される1以上の元素である)
上記式(I)で表されるナトリウム含有硫化物は、25℃で1.0×10-3 S cm-1以上の高いイオン伝導性を有しており、電池の材料として好適である。
上記式(I)で表されるナトリウム含有硫化物は、熱処理を行うことで焼結体になっていてもよい。焼結体にすることで、焼成前より高いイオン伝導性を有したナトリウム含有硫化物にすることができる。熱処理温度としては、例えば200℃~1000℃の範囲の温度で加熱することが挙げられる。
本発明の一実施形態は、ナトリウム含有硫化物を含む電極複合体を提供する。
電極複合体は正極複合体であっても、負極複合体であってもよい。
電極複合体に含まれる上記式(I)で表されるナトリウム含有硫化物の量は特に限定されないが、例えば電極複合体の80質量%、75質量%、70質量%、65質量%、60質量%、55質量%、50質量%、45質量%、40質量%、35質量%、30質量%、25質量%、20質量%、15質量%、10質量%、8質量%、6質量%、5質量%、4質量%、3質量%、2.5質量%、2質量%、1.5質量%、1質量%、0.75質量%、0.5質量%から選択される任意の上限値及び下限値の組み合わせで表される範囲とすることができる。
電極複合体中の結着材、導電材、固体電解質の量は特に限定されないが、例えば電極複合体の全質量の内の80質量%、70質量%、60質量%、50質量%、40質量%、30質量%、25質量%、20質量%、15質量%、10質量%、7質量%、5質量%、4質量%、3質量%、2.5質量%、2質量%、1.5質量%、1質量%、0.75質量%、0.5質量%、0.4質量%、0.3質量%、0.2質量%、0.1質量%、0.01質量%から選択される任意の上限値及び下限値の組み合わせで表される範囲とすることができる。
本発明は、電極と集電体とが組み合わされた電極も提供する。集電体と組み合わされる電極複合体は、上記本発明の電極複合体である。
集電体としては、本発明の電極複合体と組み合わせることができ、集電体としての機能が果たせるものであれば材質、形状等は特に限定されない。集電体の形状としては、均一な合金板の様なものであっても、孔を有した形状であってもよい。また、箔、シート状、フィルム状の形態であってもよい。
本発明の電極は、それぞれ電極複合体、集電体として形成したものを合わせて電極としてもよいし、集電体上に直接電極複合体を形成してもよい。
本発明は、上記式(I)で表されるナトリウム含有硫化物を含む固体電解質を提供する。
固体電解質は、上記式(I)で表されるナトリウム含有硫化物のみからなっていてもよいし、当該分野において一般的に使用される結着材、導電材又は上記式(I)で表されるナトリウム含有硫化物以外の固体電解質を含んでいてもよい。
結着材、導電材、上記式(I)で表されるナトリウム含有硫化物以外の固体電解質の量は特に限定されないが、例えば電極活物質の全質量の内の40質量%、30質量%、25質量%、20質量%、15質量%、10質量%、8質量%、6質量%、5質量%、4質量%、3質量%、2.5質量%、2質量%、1.5質量%、1質量%、0.75質量%、0.5質量%、0.4質量%、0.3質量%、0.2質量%、0.1質量%、0.01質量%から選択される任意の上限値及び下限値の組み合わせで表される範囲とすることができる。
本発明は、本発明の固体電解質、電極複合体又は電極を含む電池を提供する。本発明の固体電解質を用いた電池の電極、又は本発明の電極と組み合わせる電極としては、Naが可動イオンとしてやりとりすることができれば特に限定されず、当該分野において一般的に使用される電極を用いることができる。
本発明は、本製造方法で製造されたナトリウム含有硫化物を用いて電極層及び/又は固体電解質層を形成することを特徴とする全固体ナトリウム電池の製造方法を提供する。
電極層及び/又は固体電解質層を形成することは、例えば、電極層(正極層)と、固体電解質層と、電極層(負極層)とを積層し、プレスすることによりセルを得、これを容器に固定して得ることができる。電極層、固体電解質層に用いる電極、固体電解質については上述の通りである。
項1
Na2Sx(式中、1<x≦5)で表される第1の多硫化ナトリウムを加熱することにより得ることができる融液を反応媒体かつ硫黄源として、金属及び/又は半金属を含有する硫化物(ただし、前記金属はアルカリ金属でもアルカリ土類金属でもない)を常圧下で合成することを特徴とする、金属及び/又は半金属含有硫化物の製造方法。
項2
前記融液が、Na2Sy (0<y<5)で表される第2の(多)硫化ナトリウムと、単体のSとを含む混合物を加熱する工程によって製造される、項1に記載の方法。
項3
前記第1又は第2の多硫化ナトリウム並びに前記金属及び/若しくは前記半金属の1種以上の単体元素又は前記金属及び/若しくは前記半金属を含む1種以上の化合物を前記合成する金属及び/又は半金属含有硫化物の化学量論比で用いる、項1又は2に記載の方法。
前記加熱工程が開放系の反応容器で行われる、項1~3のいずれか1項に記載の方法。
項5
前記加熱工程が不活性雰囲気下で行われる、項1~4のいずれか1項に記載の方法。
項6
前記加熱工程が400℃~1000℃の範囲内の温度で行われる、項1~5のいずれか1項に記載の方法。
項7
少なくとも前記第1又は第2の多硫化ナトリウムと接する表面が炭素で構成される反応容器中で行われる、項1~6のいずれか1項に記載の方法。
加熱工程により前記金属及び/又は半金属含有硫化物硫化物を溶融する工程、および降温速度100℃/分以上で冷却する工程を含み、前記金属及び/又は半金属含有硫化物が非晶質である、項1~6のいずれか1項に記載の方法。
項9
炭素又は酸化物で構成される反応容器中で行われる、項1~6及び8のいずれか1項に記載の方法。
項10
前記第1の多硫化ナトリウムが、Na2Sx(式中、1.5≦x≦2.5)で表される多硫化ナトリウムである、項1~9のいずれか1項に記載の方法。
項11
前記化合物が酸化物及び/又は窒化物である、項3又は項3を引用する項4~10のいずれか1項に記載の方法。
前記金属及び/又は半金属を含有する硫化物がナトリウムを更に含有する、項1~11のいずれか1項に記載の方法。
項13
セルフフラックス法である、項12に記載の方法。
項14
前記金属及び/又は半金属を含有する硫化物が酸硫化物である、項1~13のいずれか1項に記載の方法。
項15
前記金属及び/又は半金属が第2周期~第6周期の第5族~第16族の金属及び/又は半金属から選択される1種の金属若しくは半金属又は2種以上の金属及び/若しくは半金属である、項1~14のいずれか1項に記載の方法。
前記金属及び/又は半金属がB、Al、Si、P、Zn、Ga、Ge、As、Se、Cd、In、Sn、Sb、Te、Tl、Pb、Bi、V、Cr、Mn、Nb、Mo、Tc、Ta、W及びReからなる群より選択される1種の金属若しくは半金属又は2種以上の金属及び/若しくは半金属である、項1~15のいずれか1項に記載の方法。
項17
前記金属及び/又は半金属含有硫化物が、下記式(I)
Na3-δα1-δβδS4 (I)
(式中、δは0<δ<1であり、αはSb、P、As及びBiから選択される1以上の元素であり、βはW、Mo及びCrから選択される1以上の元素である)
で表されるナトリウム含有硫化物である、項1~16のいずれか1項に記載の方法。
下記式(I)
Na3-δα1-δβδS4 (I)
(式中、δは0<δ<1であり、αはSb、P、As及びBiから選択される1以上の元素であり、βはW、Mo及びCrから選択される1以上の元素である)
で表される、ナトリウム含有硫化物。
項19
項18に記載のナトリウム含有硫化物を含む、固体電解質又は電極複合体。
項20
項12又は13を直接又は間接に引用する項14~17のいずれか1項に記載の方法により製造されたナトリウム含有硫化物を用いて電極層及び/又は固体電解質層を形成することを特徴とする、ナトリウムイオン全固体電池の製造方法。
以下の実施例及び比較例において、Na2Sはナガオ社製(純度99.1%以上)、Bは高純度化学研究所社製(純度99%以上)、Sは高純度化学研究所社製(純度99.99%以上)、Alは富士フイルム和光純薬社製(純度99.5%以上)、Siは富士フイルム和光純薬社製(純度99.9%以上)、Pは高純度化学研究所製(純度99.9999%)、Gaはニラコ社製(純度99.9999%以上)、Geはニラコ社製(純度99.999%)、SnはSigma-Aldrich社製(純度99%以上)、Sbは富士フイルム和光純薬社製(純度99.99%以上)、Moはニラコ社製(純度99.9%)、Wはニラコ社製(純度99.95%)、Sb2S3は日本精鉱社製(純度98%以上)、WS2はアルドリッチ社製(純度99%)を、MoS2はアルドリッチ社製を、SnS2は三津和化学社製(純度99.5%)を、SiS2はフルウチ化学社製(純度99.9%)、Li2Sは富士フイルム和光純薬社製(純度99.99%)のものをそれぞれ用いた。
また、以下の実施例及び比較例において、遊星型ボールミルにはFritsch社製Pulverisette P-7を用いた。定電流サイクル試験にはナガノ株式会社製、充放電測定装置(BTS-2004)を用いた。X線回折装置としては、リガク社製全自動多目的X線回折装置SmartLabを用いた。イオン伝導度及び電子伝導度の測定には、ソーラトロン社製のインピーダンスアナライザー(SI-1260)を用いた。マッフル炉はデンケン社のものを用いた。
Na2Sと、Sと、Bとを、モル比でNa2S:B:S=3:2:3になるように秤量した。秤量した試料を50℃で半日以上乾燥させた乳鉢と乳棒を用いて、5~10分程度、押しつぶしながら混合した。混合した試料を、カーボン坩堝(外径:7.0mm、内径:5.0mm)に入れた。これを以下の条件で加熱処理した。なお、処理はアルゴン雰囲気下のグローブボックス内で行い、水分値-70℃以上、酸素濃度が10ppm以下、常圧下の環境で作業を行った(以下グローブボックス内で行う作業は全てこの条件で行っている)。これにより、Na3BS3を得た。
(1) 室温の状態から100℃/時間の昇温速度で700℃まで加熱した。
(2) 700℃の状態を12時間維持した。
(3) 50℃/時間の降温速度で500℃まで冷却した。
(4) 500℃から10時間かけて室温まで冷却した。
比較として、従来の方法によるNa3BS3の取得を行った。
Na2Sと、Sと、Bとを、モル比でNa2S:B:S=3:2:3になるように秤量した。秤量した試料を混合し、秤量した試料を50℃で半日以上乾燥させた乳鉢と乳棒を用いて、5~10分程度、押しつぶしながら混合した。混合した試料をカーボン坩堝(外径:7.0mm、内径:5.0mm)に入れ、石英アンプル(外径:10.0mm, 内径:7.9mm)中に真空封入し、アンプルごとデンケン社のマッフル炉にて熱処理した。熱処理条件は実施例1と同じである。これにより、Na3BS3を得た。
坩堝をカーボン坩堝からSiO2-Al2O3坩堝(外径:7.0mm、内径:5.0mm)にすること以外は実施例1と同様にしてSiO2-Al2O3添加Na3BS3を得た。
坩堝をカーボン坩堝からAl2O3坩堝(外径:7.0mm、内径:5.0mm)にすること以外は実施例1と同様にしてNa3BS3を得た。
作製した各Na3BS3を用いて、X線回折(XRD)測定を行った。X線回折装置としては、SmartLabを用い、CuKα線(= 1.54056×10-10m)にて、管電圧45 kV、管電流200 mA、走査角度2θ=10°~80°、サンプリング間隔0.02°、および走査速度10°min-1で構造解析を行った(以下XRDの条件は全てこの条件で行っている)。
作製した各Na3BS3に対して元素分析装置を用いて組成比を測定した。元素分析装置としては、CHNS元素分析VarioEL cubeを用いた。
測定結果を以下の表1に示す。測定はn=2で行った。実験によって得られた結果をMeas.に、得られた計算から概算した[Na+B+O]と[S]の質量比をCal.(Approx.)に示す。
Na2Sと、Sと、Siとを、モル比でNa2S:Si:S=2:1:2になるように秤量すること以外は実施例1と同様にしてNa4SiS4を得た。
Na2Sと、Sと、Alとを、モル比でNa2S:Al:S=5:2:3になるように秤量すること以外は実施例1と同様にしてNa5AlS4を得た。
出発原料であるNa2Sと、Sと、Siと、Alとを、モル比でNa4SiS4:Na5AlS4=75:25の比率になるように秤量すること以外は実施例1と同様にして75Na4SiS4・25Na5AlS4 (Na4.25Si0.75Al0.25S4)を得た。
Na2Sと、Sと、Gaとを、モル比でNa2S:Ga:S=5:2:3になるように秤量すること以外は実施例1と同様にしてNa5GaS4を得た。
Na2Sと、Sと、Geとを、モル比でNa2S:Ge:S=2:1:2になるように秤量すること以外は実施例1と同様にしてNa4GeS4を得た。
Na2Sと、Sと、Snとを、モル比でNa2S:Sn:S=2:1:2になるように秤量すること以外は実施例1と同様にしてNa4SnS4を得た。
出発原料であるNa2Sと、Sと、Siと、Bとをモル比でNa3BS3:Na4SiS4=75:25の比率になるように秤量すること以外は実施例1と同様にし、75Na3BS3・25Na4SiS4を得た。
図2A~Cより、Si、Al、Ga、Geなどの種々の元素を用いても、ナトリウム含有硫化物を得られることが示された。
実施例2、4及び6のナトリウム含有硫化物を用いてイオン伝導度(σ)と活性化エネルギー(Ea)を測定した。
交流インピーダンスは、インピーダンスアナライザー(SI-1260)を用い、以下のようにポリカセル(ポリカーボネートセル)を作製して測定した。
集電体にはSKDを、絶縁材には内径10 mmのポリカーボネートをそれぞれ用いた。各粉末試料150mgを秤量してロッド内に加え、油圧式プレス機を用いて360MPaで5分間一軸プレスにより成形を行うことでペレットを作製した。軸およびロッドごとネジでかしめることで固定し、ガラス容器に入れ、ゴム栓で封入した。測定周波数は0.1 Hz~1×106 Hz、交流振幅は10mV、得られたインピーダンスプロットの半円と実軸の交点を試料の抵抗R(Ω)とし、以下の式からイオン伝導度σ(S cm-1)を求めた。
σ=(1/R)・(L/S) (1)
L : ペレットの厚さ(cm) S : 電極表面積(0.785cm2)
σ= A exp(-Ea/RT) (2)
[σ= イオン伝導度(S cm-1)、A : 前指数因子、T : 測定温度(K)、Ea: 活性化エネルギー(kJ mol-1)、R : 気体定数(kJ mol-1K-1)]
Na2Sと、Sと、Bと、SiO2とを、モル比でNa2S:B:S:SiO2=3:2:3:2になるように秤量して混合すること以外は、実施例1と同様にしてNa3BS3-SiO2を得た。
Na2Sと、Sと、Bと、Al2O3とを、モル比でNa2S:B:S:Al2O3=3:2:3:2になるように秤量して混合すること以外は、実施例1と同様にしてNa3BS3- Al2O3を得た。
出発原料であるNa2Sと、Sと、SiとSiO2とをモル比でNa4SiS4:Na4SiO4=75:25の比率になるように秤量するすること以外は実施例1と同様にし、75 Na4SiS4・25 Na4SiO4を得た。
図4より、酸化物を添加しても本発明の方法でナトリウム含有硫化物(酸硫化物)を製造できることが示された。得られた酸硫化物は非晶質であった。
Na2Sと、Sと、Bとを、モル比でNa2S:B:S=3:2:3になるように秤量した。秤量した試料を50℃で半日以上乾燥させた乳鉢と乳棒を用いて、5~10分程度、押しつぶしながら混合した。混合した試料を、カーボン坩堝に入れた。これを実施例1と同様の条件で加熱処理した。
加熱直後の試料に対して、アイロンプレスを用いて急冷した。これにより、Na3BS3(急冷物)を得た。冷却速度は300℃/s 以上であると著者らは考えている。
Na2Sと、Sと、Siとを、モル比でNa2S:Si:S=2:1:2になるように秤量すること以外は実施例14と同様にしてNa4SiS4(急冷物)を得た。
Na2Sと、Sと、Alとを、モル比でNa2S:Al:S=5:2:3になるように秤量すること以外は実施例14と同様にしてNa5AlS4(急冷物)を得た。
図5より、実施例14~16のナトリウム含有硫化物試料は全てアモルファスの状態であることが理解できる。このことから、急冷操作を行うことで、添加する元素に関わらずアモルファスのナトリウム含有硫化物を製造できることが示された。
Na2Sと、Sと、Sbと、Wを、モル比でNa2S:Sb:W:S=36:22:3:64になるように秤量した。秤量した試料を50℃で半日以上乾燥させた乳鉢と乳棒を用いて、5~10分程度、押しつぶしながら混合した。混合した試料0.5gを、カーボン坩堝(外径:7.0mm、内径:5.0mm)に入れた。これを以下の条件で加熱処理した。これにより、Na2.88Sb0.88W0.12S4を得た。
(1) 室温の状態から100℃/時間の昇温速度で450℃まで加熱した。
(2) 450℃の状態を12時間維持した。
(3) 50℃/時間の昇温速度で500℃まで加熱した。
(4) 500℃から10時間かけて室温まで冷却した。
処理する試料量を0.5gから5.0gにすること以外は実施例17と同様にしてNa2.88Sb0.88W0.12S4を得た。
Na2Sと、Sと、Sbと、Wを、モル比でNa2S:Sb:W:S=57:34:6:103になるように秤量すること以外は実施例17と同様にしてNa2.85Sb0.85W0.15S4を得た。
Na2Sと、Sと、Sbと、Wを、モル比でNa2S:Sb:W:S=141:82:18:259になるように秤量すること以外は実施例17と同様にしてNa2.82Sb0.82W0.18S4を得た。
Na2Sと、Sと、Sbと、Wを、モル比でNa2S:Sb:W:S=7:4:1:13になるように秤量すること以外は実施例17と同様にしてNa2.80Sb0.80W0.20S4を得た。
以下の手順により、従来法によるガラスセラミックスNa2.88Sb0.88W0.12S4を製造した。
Na2S、Sb2S3、S(ここでのSはAldrich社製(純度99.98%以上)及びWS2をNa2.88Sb0.88W0.12S4の組成でそれぞれ混合し、遊星型ボールミルに投入した。投入後、メカニカルミリング処理することで、ガラス状のNa2.88Sb0.88W0.12S4を得た。遊星型ボールミルは、Fritsch社製Pulverisette P-7を使用し、ポット及びボールはZrO2製であり、45mlのポット内に直径4mmのボールが250個入っているミルを使用した。メカニカルミリング処理は、サンプル投入量0.5g、510rpmの回転速度、室温、乾燥アルゴングローブボックス内で15時間行った。
ガラス状のNa2.88Sb0.88W0.12S4約150mgを室温で5分間プレス(圧力360MPaから1080MPa)することで、厚さ約1mmのNa2.88Sb0.88W0.12S4ペレットを得た。Na2.88Sb0.88W0.12S4ペレットを250℃(x=0)から275℃で12時間加熱しガラスセラミックス状のNa2.88Sb0.88W0.12S4ペレットを得た。
図6、図7より、Wの添加量に関わらず、立方晶構造のNa3SbS4に帰属可能なパターンが観察されることがわかった。
本発明の手法で、Wの添加量に関わらず、狙った組成でNa3-δα1-δβδS4系のナトリウム含有硫化物を製造できることが示された。
実施例17~22のナトリウム含有硫化物のペレットに対しては、275℃の温度で1.5時間加熱して焼結体を作製して測定に用いた。測定結果を図8及び表3に示す。
加熱処理温度を450℃から550℃にすること以外は実施例17と同様にして実施例22のNa2.88Sb0.88W0.12S4を得た。
WをMoにすること以外は実施例17と同様にしてNa2.88Sb0.88Mo0.12S4を得た。
Sbの代わりにPを用い、Na2Sと、Sと、Pと、Wを、モル比でNa2S:P:W:S=1175:750:54:2025になるように秤量し、加熱処理温度を450℃から550℃にすること以外は実施例17と同様にしてNa2.9375P0.9375W0.0675S4を得た。
Sbの代わりにPを用い、Na2Sと、Sと、Pと、Wを、モル比でNa2S:P:W:S=57:34:6:103になるように秤量し、加熱処理温度を450℃から550℃にすること以外は実施例17と同様にしてNa2.85P0.85W0.15S4を得た。
Na2SとSとの混合物、あるいはLi2SとSとの混合物を作製して加熱し、熱重量・示差熱同時分析(TG-DTA)を行い、それぞれの混合物の重量変化及びDTA曲線を比較した。
測定試料としては、Na2SとS、あるいはLi2SとSとをモル比で1:1になるように混合した試料を用いた。測定条件としては、N2気流下の熱重量・示差熱測定装置に試料を入れ、昇温速度2℃/分又は10℃/分で測定した。
Claims (20)
- Na2Sx(式中、1<x≦5)で表される第1の多硫化ナトリウムを加熱することにより得ることができる融液を反応媒体かつ硫黄源として、金属及び/又は半金属を含有する硫化物(ただし、前記金属はアルカリ金属でもアルカリ土類金属でもない)を常圧下で合成することを特徴とする、金属及び/又は半金属含有硫化物の製造方法。
- 前記融液が、Na2Sy (0<y<5)で表される第2の(多)硫化ナトリウムと、単体のSとを含む混合物を加熱する工程によって製造される、請求項1に記載の方法。
- 前記第1又は第2の多硫化ナトリウム並びに前記金属及び/若しくは前記半金属の1種以上の単体元素又は前記金属及び/若しくは前記半金属を含む1種以上の化合物を前記合成する金属及び/又は半金属含有硫化物の化学量論比で用いる、請求項1又は2に記載の方法。
- 前記加熱工程が開放系の反応容器で行われる、請求項1~3のいずれか1項に記載の方法。
- 前記加熱工程が不活性雰囲気下で行われる、請求項1~4のいずれか1項に記載の方法。
- 前記加熱工程が400℃~1000℃の範囲内の温度で行われる、請求項1~5のいずれか1項に記載の方法。
- 少なくとも前記第1又は第2の多硫化ナトリウムと接する表面が炭素で構成される反応容器中で行われる、請求項1~6のいずれか1項に記載の方法。
- 加熱工程により前記金属及び/又は半金属含有硫化物硫化物を溶融する工程、および降温速度100℃/分以上で冷却する工程を含み、前記金属及び/又は半金属含有硫化物が非晶質である、請求項1~6のいずれか1項に記載の方法。
- 炭素又は酸化物で構成される反応容器中で行われる、請求項1~6及び8のいずれか1項に記載の方法。
- 前記第1の多硫化ナトリウムが、Na2Sx(式中、1.5≦x≦2.5)で表される多硫化ナトリウムである、請求項1~9のいずれか1項に記載の方法。
- 前記化合物が酸化物及び/又は窒化物である、請求項3又は請求項3を引用する請求項4~10のいずれか1項に記載の方法。
- 前記金属及び/又は半金属を含有する硫化物がナトリウムを更に含有する、請求項1~11のいずれか1項に記載の方法。
- セルフフラックス法である、請求項12に記載の方法。
- 前記金属及び/又は半金属を含有する硫化物が酸硫化物である、請求項1~13のいずれか1項に記載の方法。
- 前記金属及び/又は半金属が第2周期~第6周期の第5族~第16族の金属及び/又は半金属から選択される1種の金属若しくは半金属又は2種以上の金属及び/若しくは半金属である、請求項1~14のいずれか1項に記載の方法。
- 前記金属及び/又は半金属がB、Al、Si、P、Zn、Ga、Ge、As、Se、Cd、In、Sn、Sb、Te、Tl、Pb、Bi、V、Cr、Mn、Nb、Mo、Tc、Ta、W及びReからなる群より選択される1種の金属若しくは半金属又は2種以上の金属及び/若しくは半金属である、請求項1~15のいずれか1項に記載の方法。
- 前記金属及び/又は半金属含有硫化物が、下記式(I)
Na3-δα1-δβδS4 (I)
(式中、δは0<δ<1であり、αはSb、P、As及びBiから選択される1以上の元素であり、βはW、Mo及びCrから選択される1以上の元素である)
で表されるナトリウム含有硫化物である、請求項1~16のいずれか1項に記載の方法。 - 下記式(I)
Na3-δα1-δβδS4 (I)
(式中、δは0<δ<1であり、αはSb、P、As及びBiから選択される1以上の元素であり、βはW、Mo及びCrから選択される1以上の元素である)
で表される、ナトリウム含有硫化物。 - 請求項18に記載のナトリウム含有硫化物を含む、固体電解質又は電極複合体。
- 請求項12又は13を直接又は間接に引用する請求項14~17のいずれか1項に記載の方法により製造されたナトリウム含有硫化物を用いて電極層及び/又は固体電解質層を形成することを特徴とする、ナトリウムイオン全固体電池の製造方法。
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