WO2023085132A1 - Dispositif de détection de lumière et appareil électronique - Google Patents

Dispositif de détection de lumière et appareil électronique Download PDF

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Publication number
WO2023085132A1
WO2023085132A1 PCT/JP2022/040534 JP2022040534W WO2023085132A1 WO 2023085132 A1 WO2023085132 A1 WO 2023085132A1 JP 2022040534 W JP2022040534 W JP 2022040534W WO 2023085132 A1 WO2023085132 A1 WO 2023085132A1
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Prior art keywords
light
photoelectric conversion
shielding film
conversion element
receiving lens
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PCT/JP2022/040534
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English (en)
Japanese (ja)
Inventor
健悟 永田
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ソニーセミコンダクタソリューションズ株式会社
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Publication of WO2023085132A1 publication Critical patent/WO2023085132A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels

Definitions

  • the present disclosure relates to a photodetector such as a solid-state imaging device that suppresses optical and electrical crosstalk, and an electronic device using the photodetector.
  • a pixel isolation portion is formed between adjacent elements.
  • a thick film of silicon (Si) constituting the pixel isolation part RDTI (Reverse side Deep Trench Isolation), which is a structure in which an insulating trench is dug from the back surface (lower surface) of the substrate, etc. are adopted. ing.
  • the photoelectric conversion unit is arranged in the partitioned section by dividing the pixels by the pixel separation unit embedded in the trench provided on the side of the photoelectric conversion unit on the incident light incident surface side of the semiconductor substrate. is set. It is separated from other pixels P by this.
  • the pixel separation section is a partition that electrically separates a plurality of pixels, and is made of an insulating material or the like that blocks incident light.
  • the present disclosure has been made in view of such problems, and aims to provide a photodetector that suppresses electrical crosstalk in photoelectric conversion and an electronic device using the photodetector.
  • a first aspect of the present disclosure includes a photoelectric conversion element including a photoelectric conversion unit that performs photoelectric conversion, and pixels on the light receiving surface side of the photoelectric conversion element.
  • a light-receiving lens disposed for each light-receiving lens, and a light-receiving lens disposed facing the light-receiving lens, disposed on the light-receiving lens side of the photoelectric conversion element, and a light entrance for incident light condensed by the light-receiving lens and a light shielding film having a
  • the photodetector includes a light exit light shielding film having an opening, and a pixel separation wall connecting peripheral edges of the light entrance light shielding film and the light exit light shielding film and surrounding at least a portion of the photoelectric conversion element.
  • the photoelectric conversion unit includes a photoelectric conversion tube formed by the pixel separation wall extending along the optical axis direction from the peripheral edge of the light entrance of the light shielding film. It may be arranged inside.
  • the pixel separation wall may surround the entire side surface of the photoelectric conversion element.
  • a second aspect thereof includes a photoelectric conversion element including a photoelectric conversion portion that performs photoelectric conversion, a light receiving lens provided for each pixel on the light receiving surface side of the photoelectric conversion element, and a light receiving lens provided facing the light receiving lens.
  • a light shielding film disposed on the light receiving lens side of the photoelectric conversion element and having a light inlet for incident light condensed by the light receiving lens;
  • the photoelectric conversion element has a light exit opening for light that has passed through the photoelectric conversion element, the peripheral edge of the light incident light shielding film or the peripheral edge of the light entrance light shielding film and the peripheral edge of the light exit opening are connected to each other, and at least the photoelectric conversion element and a pixel separation wall that partially surrounds the photoelectric conversion unit to form the photoelectric conversion unit.
  • the pixel separation wall surrounds four side surfaces of the photoelectric conversion element and extends obliquely along the optical axis direction.
  • the enclosed portion may be formed in a substantially square pyramid shape.
  • the pixel separation wall surrounds four side surfaces of the photoelectric conversion element, and one of the four side surfaces of the pixel separation wall, one of which faces two side surfaces, extends in an oblique direction along the optical axis direction. , and the other two opposing side surfaces are extended along the optical axis direction, so that the portion of the photoelectric conversion element surrounded by the pixel separation wall is formed in a substantially trapezoidal shape.
  • a second aspect thereof includes a photoelectric conversion element including a photoelectric conversion portion that performs photoelectric conversion, a light receiving lens provided for each pixel on the light receiving surface side of the photoelectric conversion element, and a light receiving lens provided facing the light receiving lens.
  • a light shielding film disposed on the light receiving lens side of the photoelectric conversion element and having a light entrance for incident light condensed by the light receiving lens; facing the photoelectric conversion element, the photoelectric conversion element has a light exit opening for light passing through the photoelectric conversion element, and the peripheral edge of the light incident light shielding film or the peripheral edge of the light entrance opening and the peripheral edge of the light exit opening of the photoelectric conversion unit are connected to each other; and a pixel separation wall surrounding at least a portion of the conversion element.
  • the pixel separation wall surrounds four side surfaces of the photoelectric conversion element and extends obliquely along the optical axis direction, and the photoelectric conversion element surrounded by the pixel separation wall may be formed in a substantially quadrangular pyramid shape.
  • the pixel separation wall surrounds four side surfaces of the photoelectric conversion element, and one of the four side surfaces of the pixel separation wall, one of which faces two side surfaces, extends in an oblique direction along the optical axis direction. , and other two opposing side surfaces thereof extend along the optical axis direction, so that the photoelectric conversion element surrounded by the pixel separation wall may be formed in a substantially trapezoidal shape.
  • the light entrance opening of the light entrance shielding film may be formed wider than the light exit opening of the light exit light shielding film or the photoelectric conversion section.
  • the microlens may be focused so as to converge on the light entrance of the light shielding film.
  • two or more of the outgoing light shielding films may be disposed facing the incoming light shielding film.
  • the light entrance opening of the light entrance shielding film and the light exit opening of the light exit light shielding film or the photoelectric conversion unit may be arranged on the optical axis of the light receiving lens. good.
  • the light entrance opening of the light entrance light shielding film and the light exit opening of the light exit light shielding film or the photoelectric conversion section are displaced with respect to the optical axis of the light receiving lens. may be set.
  • the light entrance opening of the light entrance shielding film and the light exit opening of the light exit light shielding film or the photoelectric conversion section are oblique to the optical axis of the light receiving lens. may be placed in
  • the light entrance opening of the light entrance shielding film, the light exit light shielding film, or the light exit opening of the photoelectric conversion section may be formed in a rectangular shape.
  • the light entrance opening of the light entrance shielding film, the light exit light shielding film, or the light exit opening of the photoelectric conversion section may be formed in a circular shape.
  • the pixel separation wall or the light shielding film is made of silicon nitride (Si 3 N 4 ), silicon dioxide (SiO 2 ), tungsten (W), aluminum (Al), or air. may be formed from
  • the light shielding film may be made of silicon nitride (Si 3 N 4 ), silicon dioxide (SiO 2 ), tungsten (W), aluminum (Al), or air. .
  • a third aspect thereof includes a photoelectric conversion element including a photoelectric conversion portion that performs photoelectric conversion, a light receiving lens provided for each pixel on the light receiving surface side of the photoelectric conversion element, and a light receiving lens provided facing the light receiving lens.
  • a light-incident light-shielding film disposed on the light-receiving lens side of the photoelectric conversion element and having a light entrance for incident light condensed by the light-receiving lens; a light exit light shielding film disposed on the opposite side of the photoelectric conversion element from the light receiving lens side and having a light exit opening for light that has passed through the photoelectric conversion element;
  • a photodetector having a pixel separation wall that connects peripheral edges and surrounds at least a portion of the photoelectric conversion element, or a photoelectric conversion element that includes a photoelectric conversion unit that performs photoelectric conversion, and a light receiving surface of the photoelectric conversion element.
  • the electronic device includes a pixel separation wall that connects the periphery of the light entrance and the periphery of the light exit and surrounds at least a portion of the photoelectric conversion element to form the photoelectric conversion section. .
  • FIG. 1 is a cross-sectional end view of a pixel of a first embodiment of a photodetector according to the present disclosure
  • FIG. 1 is a plan view of a pixel of a first embodiment of a photodetector according to the present disclosure
  • FIG. 1A and 1B are a cross-sectional end view of two pixels and a cross-sectional end view of a light entrance and a light exit of a single pixel, showing the schematic structure of the basic form of the photodetector according to the first embodiment of the present disclosure
  • FIG. 3A is a cross-sectional end view of two pixels and a cross-sectional end view of a light entrance and a light exit of a single pixel, showing a schematic structure of a modified example of the first embodiment of the photodetector according to the present disclosure
  • FIG. 3A is a cross-sectional end view of two pixels and a cross-sectional end view of a light entrance and a light exit of a single pixel, showing a schematic structure of a second embodiment of a photodetector according to the present disclosure
  • FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a photodetector according to a third embodiment of the present disclosure
  • FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a fourth embodiment of a photodetector according to the present disclosure
  • FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a fifth embodiment of a photodetector according to the present disclosure
  • FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a fifth embodiment of a photodetector according
  • FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a sixth embodiment of a photodetector according to the present disclosure
  • FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a photodetector according to a seventh embodiment of the present disclosure
  • FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of an eighth embodiment of a photodetector according to the present disclosure
  • FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of an eighth embodiment of a photodetector according to the
  • FIG. 10A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a ninth embodiment of a photodetector according to the present disclosure
  • FIG. 11 is a cross-sectional end view showing a schematic structure of a single pixel when an EPI process flow is used in the sixth to ninth embodiments of the photodetector according to the present disclosure
  • FIG. 11 is a cross-sectional end view showing a schematic structure of a single pixel when an ESS process flow is used in the sixth to ninth embodiments of the photodetector according to the present disclosure
  • FIG. 11A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a tenth embodiment of a photodetector according to the present disclosure
  • FIG. 11A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of an eleventh embodiment of a photodetector according to the present disclosure
  • FIG. 20 is a cross-sectional end view showing a schematic structure of a single pixel when an EPI process flow is used in the eleventh embodiment of the photodetector according to the present disclosure
  • FIG. 21 is a cross-sectional end view showing a schematic structure of a single pixel when an ESS process flow is used in the eleventh embodiment of the photodetector according to the present disclosure
  • FIG. 12A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a photodetector according to a twelfth embodiment of the present disclosure
  • FIG. 20A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a photodetector according to a thirteenth embodiment of the present disclosure
  • FIG. 12A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a photodetector according to a thirteenth embodiment of the present disclosure
  • FIG. 21A is a cross-sectional end view of a single pixel and a cross-sectional end view of a light entrance of a single pixel, showing a schematic structure of a fourteenth embodiment of a photodetector according to the present disclosure
  • FIG. 4 is an explanatory diagram of a method for manufacturing a photodetector according to the present disclosure by an EPI process
  • FIG. 3 is an explanatory diagram of a method for manufacturing a photodetector according to the present disclosure by an ESS process
  • FIG. 4 is a schematic explanatory diagram of etching by a cluster beam
  • FIG. 10 is an explanatory diagram of a processing method for forming trenches in an oblique direction using a cluster beam; 1 is a block diagram showing a configuration example of an electronic device including a photodetector according to an embodiment of the present disclosure; FIG.
  • FIG. 1 is a cross-sectional end view of the X1-X1 portion of the partial plan view of the pixel P shown in FIG.
  • the thickness direction of the semiconductor substrate 110 (the vertical direction in FIG. 1) is defined as the vertical direction.
  • a plurality of pixels P are arranged in a matrix in the horizontal direction and the vertical direction in a plan view of the imaging surface.
  • the pixel P is configured such that incident light H from above is received by a photodiode 120, which is a photoelectric conversion element, and is photoelectrically converted to generate a color image signal. . Therefore, in the photodetector 100, a photodiode 120 is arranged corresponding to each pixel P. As shown in FIG.
  • the semiconductor substrate 110 is made of, for example, thinned monocrystalline silicon. As shown in FIG. 1, the inside thereof includes a photodiode 120 corresponding to each pixel P and a pixel separation wall surrounding four side surfaces of the p-type semiconductor region 120p of each photodiode 120 along the optical axis LA direction. 130 are provided. The pixel separation walls 130 are formed in the trenches 111 formed by drilling the trenches 111 from the lower surface side of the semiconductor substrate 110 .
  • a microlens 101 as a light receiving lens and a color filter 102 are stacked on an incident light shielding film 104 with a planarizing film 103 interposed therebetween.
  • the incident light shielding film 104 is laminated on the semiconductor substrate 110 .
  • a transfer transistor gate 121 is arranged on the lower surface of the semiconductor substrate 110 . Further, as shown in FIG. 1, a wiring layer 300 including wirings 301 and 302 electrically connected to the transfer transistor gate 121 to form a circuit is stacked. A support substrate 320 is layered on the lower surface of the wiring layer 300 .
  • the schematic configuration of the photodetector 100 according to the first embodiment is as described above. Each component will be described in more detail below.
  • the microlens 101 is arranged in each pixel P corresponding to each pixel P.
  • the microlens 101 is an upwardly convex plano-convex lens on the upper surface of the semiconductor substrate 110, and is configured to condense the incident light H of each pixel P onto the corresponding photodiode 120.
  • the microlens 101 forms a focal point so that the light is converged on a light entrance 104a of the light entrance shielding film 104, which will be described later. Therefore, even if the light inlet 104a is formed as a narrow small hole, the incident light H to the microlens 101 can enter the photodiode 120 without reducing the light amount.
  • the microlens 101 is formed using an organic material such as resin, for example.
  • the color filter 102 includes a red filter layer 102R, a green filter layer 102G, and a blue filter layer 102B, as shown in FIG. These color filters 102 are provided corresponding to the pixels P, respectively.
  • the red filter layer 102R, the green filter layer 102G, and the blue filter layer 102B are arranged in a so-called Bayer arrangement.
  • the red filter layer 102R has a high light transmittance in a wavelength band corresponding to red (for example, 625 to 740 nm), and is formed so that the incident red light H passes through the light entrance 104a of the light shielding film 104.
  • the green filter layer 102G has a high light transmittance in a wavelength band corresponding to green (for example, 500 to 565 nm), and is formed so that the green incident light H passes through the light entrance 104a of the light shielding film 104. It is
  • the blue filter layer 102B has a high light transmittance in a wavelength band corresponding to blue (for example, 450 to 485 nm), and is formed so that blue incident light H passes through the light entrance 104a of the light entrance shielding film 104. It is
  • a flattening film 103 is laminated on the lower surface of the color filter 102 as shown in FIG.
  • the planarization film 103 is an insulating material that transmits light.
  • a semiconductor substrate 110 is stacked with a planarization film 103 interposed therebetween.
  • Photodiodes 120 and the like, which are photoelectric conversion elements, are formed on the semiconductor substrate 110 .
  • FIG. 3A is a two-pixel cross-sectional end view showing the schematic structure of the first embodiment of the photodetector according to the present disclosure.
  • FIG. 3A corresponds to FIG. However, FIG. 3A is upside down with respect to FIG. 1, and the wiring layer 300 and the support substrate 320 are omitted. Therefore, the microlens 101 faces downward.
  • FIG. 3B is a cross-sectional end view of the light shielding film 104 on the right side of the X2-X2 portion of FIG. 3A.
  • FIG. 3C is a cross-sectional end view of the light output light shielding film 106 on the right side of the X3-X3 portion of FIG. 3A.
  • FIG. 3A and the drawings corresponding to the end cross-sectional views of the X1-X1 portion of FIG. 2 of each embodiment described below (FIGS. 4A to 12A, 15A, 16A, 19A to 21A)
  • the lower side of the drawing (lower side in FIG. 3A) is the incident light shielding film 104 side, and the upper side (upper side in FIG. 3A) is the rear end side of the photodiode 120 .
  • the incident light shielding film 104 allows the incident light H condensed by the microlens 101 to pass through the light entrance 104a and enter the photodiode 120, and shields other light.
  • the incident light shielding film 104 is arranged on the microlens 101 side (upper side) of the photodiode 120 so as to face the microlens 101, as shown in FIG. 3A.
  • the incident light shielding film 104 may be arranged with an insulating film (not shown) such as a silicon oxide film interposed between the planarizing film 103 and the flattening film 103 .
  • the incident light shielding film 104 is formed to have a rectangular cross-sectional shape.
  • a rectangular light entrance 104a through which the incident light H passes is formed on the optical axis LA.
  • the incident light blocking film 104 is formed so as to be parallel to the microlenses 101 by forming trenches 111 vertically in the microlenses 101 and then horizontally. A method for manufacturing the incident light shielding film 104 and the trench 111 will be described later.
  • the shape of the opening of the light inlet 104a is not limited to a rectangular shape.
  • any shape such as circular, elliptical, triangular, trapezoidal, rhomboidal, fan-shaped, and star-shaped may be used.
  • a circle can have a smaller perimeter than a square. For example, if one side of a square is W, its equivalent diameter De is W and its perimeter is 4W. On the other hand, if the diameter of a circle is W, its equivalent diameter De is W. However, the perimeter is ⁇ W, which is smaller than the square.
  • the microlens 101 is a plano-convex lens that is circular in plan view, the luminous intensity distribution of the condensed incident light H is concentric. Therefore, by forming the shape of the opening of the light inlet 104a in a circular shape, the light can enter without waste. Thereby, the aperture ratio can be reduced.
  • the shape of the opening of the light exit port 106a of the light exit light shielding film 106 is not limited to a rectangular shape, and may be circular or the like.
  • the incident light shielding film 104 is made of a material having light shielding and reflecting properties. Materials such as silicon nitride (Si 3 N 4 ), silicon dioxide (SiO 2 ), tungsten (W), aluminum (Al), or air can be used for the incident light shielding film 104 . Since there is a large difference in refractive index between silicon and air, light that has once entered silicon is reflected as it is at the interface with air, and is repeatedly reflected inside silicon, so that incident light H can be confined. can. For this reason, using air as a material for the incident light shielding film 104 and the pixel separation wall 130 without filling the trenches 111 with anything can be considered as an option. Also, although not shown in the drawings, the portions made of metal or conductor and requiring electrical insulation are, of course, insulated by treatment with a predetermined insulating film or the like.
  • the outgoing light shielding film 106 has a light shielding property, and has a rectangular cross-sectional end face, similarly to the incident light shielding film 104 .
  • a rectangular light exit opening 106a through which the incident light H passes to the light receiving surface is opened on the optical axis LA.
  • the light exit 106a is an exit for electrons e generated by photoelectric conversion. It also serves as an exit for the incident light H that has not been photoelectrically converted.
  • the outgoing light shielding film 106 is disposed facing the incident light shielding film 104 at the position of the junction surface between the p-type semiconductor region 120p and the n-type semiconductor region 120n. However, it may be arranged at a position including the n-type semiconductor region 120n.
  • the photodiode 120 is a photoelectric conversion element that receives incident light H and photoelectrically converts it to generate and integrate electrons e, which are signal charges.
  • the photodiode 120 directs the incident light H to the pixel P through the microlens 101, the color filter 102, the planarization film 103, and the light entrance 104a of the light entrance shielding film 104. receive light through
  • the photodiode 120 has a p-type semiconductor as a base material, and a p-type semiconductor region 120p is formed on the lower side of FIG. 3A (upper side in FIG. 1), which is the light receiving surface side.
  • An n-type semiconductor region 120n is formed on the opposite side of the light-receiving surface, that is, on the upper side in FIG. 3A (lower side in FIG. 1). Further, the n-type semiconductor region 120n is formed such that the impurity concentration increases with increasing distance from the light receiving surface side.
  • the incident light H were not photoelectrically converted, it would pass through the photodiode 120 as it is, which is not preferable.
  • the number of electrons e generated by photoelectric conversion is smaller than the number of photons incident on the photodiode 120 .
  • the quantum efficiency which is the ratio of the number of generated electrons e to the number of incident photons, is degraded.
  • optical crosstalk color mixture
  • the path length for photoelectric conversion of the incident light H in the photodiode 120 should be set to It is desirable to keep it for as long as possible. Moreover, it is desirable to configure so that the generated electron e cannot move to the adjacent pixel P.
  • pixel separation walls 130 are provided to electrically separate the four side surfaces of the photodiodes 120 of the plurality of pixels P.
  • the pixel separation wall 130 is erected from the periphery of the incident light shielding film 104 provided for each pixel P, and extends downward along the optical axis LA (upward in FIG. 3A.
  • the direction of the optical axis LA is referred to as the “downward direction”.
  • the rear end of the extended pixel separation wall 130 and the output light shielding film 106 are connected to each other, and a substantially rectangular shape in which six surfaces are surrounded by the light input shielding film 104, the pixel separation wall 130, and the output light shielding film 106.
  • photoelectric conversion unit 150 is formed.
  • the photoelectric conversion section 150 has the light shielding film 104 at the front end, the four side surfaces of the p-type semiconductor region 120p of the photodiode 120, which is a photoelectric conversion element, surrounded by the pixel separation wall 130, and the rear end.
  • the light shielding film 106 is disposed so as to face the light shielding film 104 to form a substantially rectangular shape.
  • the photoelectric conversion section 150 includes the p-type semiconductor region 120p of the photodiode 120. As shown in FIG. It may also include part of the n-type semiconductor region 120n.
  • the incident light H condensed by the microlens 101 passes through the light inlet 104a and enters the photoelectric conversion unit 150. As shown in FIG. The incident light H that enters the photoelectric conversion unit 150 collides with the inner wall of the photoelectric conversion unit 150 and is repeatedly reflected.
  • the inner wall of the photoelectric conversion unit 150 refers to a total of six surfaces surrounding a portion of the photodiode 120, which is a photoelectric conversion element, which is composed of the four side surfaces of the incident light shielding film 104, the exiting light shielding film 106, and the pixel separation wall 130. It is the inner wall of the wall of the These inner walls are made of, for example, silicon nitride (Si 3 N 4 ), silicon dioxide (SiO 2 ), tungsten (W), aluminum (Al), air, or the like, and constitute reflectors.
  • the incident light H that has passed through the light inlet 104a collides with the inner wall of the photoelectric conversion section 150 and is repeatedly reflected, as shown in FIG. 3A.
  • the incident light H is photoelectrically converted in the photodiode 120 while being repeatedly reflected.
  • the incident light H is repeatedly reflected while colliding with the inner wall, thereby increasing the path length.
  • the incident light H is photoelectrically converted in the photodiode 120 at some time. Therefore, it is possible to prevent the incident light H from being photoelectrically converted in the photodiode 120 and emitted from the light exit opening 106 a of the light exit light shielding film 106 .
  • the electrons e generated by photoelectric conversion in this way move in the photodiode 120 toward the transfer transistor gate 121 at the rear end, where the n-type impurity concentration is high, and are accumulated there. Then, the electron e is transferred to a diffusion capacitor (FD: Floating Diffusion) 122 by the operation of a transfer transistor gate 121 made of polysilicon and accumulated therein.
  • the electrons e accumulated in the diffusion capacitor 122 are transferred as image data to a signal processing section (not shown) formed in the wiring layer 300 via the via 124 and the wiring 301 by the operation of an amplification transistor (not shown) and a selection transistor (not shown). shown).
  • the circuit configurations of the transfer transistor gate 121 and the diffusion capacitor 122 are omitted as appropriate to avoid complication.
  • the incident light H enters the photoelectric conversion unit 150 and collides with the inner wall of the photoelectric conversion unit 150. to repeat the reflection. Thereby, a long path length is ensured, and the photodiode 120 is configured to perform photoelectric conversion.
  • the incident light H from being photoelectrically converted in the photodiode 120 and emitted from the light exit opening 106 a of the light exit light shielding film 106 .
  • the pixel separation walls 130 forming the photoelectric conversion section 150 made of a reflective electrical insulating material surround the four sides, and the light exit 106a is formed as a small hole on the optical axis LA. there is As a result, the distance to the pixel P adjacent to the light exit port 106a is increased, so that the movement direction of the electrons e generated by photoelectric conversion is restricted.
  • the distance from the light entrance opening 104a of the light entrance light shielding film 104 to the light exit opening 106a of the light exit light shielding film 106 is a diagonal line between the two, so that the path length of the incident light H can be increased. can. This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
  • 5B and 5C show an example in which the light inlet 104a and the light outlet 106a on the right side of FIG. 5A are arranged obliquely with respect to the optical axis LA. On the other hand, they may be displaced and arranged at arbitrary positions. Further, the positional relationship of the light inlet 104a and the light outlet 106a with respect to the optical axis LA according to this embodiment can also be applied to other embodiments described later. Other than the above, since it is the same as the first embodiment, the description is omitted.
  • the pixel separation wall 130 is erected from the opening edge of the light entrance opening 104a of the light entrance shielding film 104, and the n-type semiconductor region 120n extends downward.
  • the difference from the first embodiment is that a substantially rectangular photoelectric conversion tube 151 smaller than the photoelectric conversion unit 150 is formed extending to a position including the .
  • the opening portion at the rear end of the photoelectric conversion tube 151 corresponds to the light output opening 106 a of the light output light shielding film 106 .
  • the photoelectric conversion unit 150 can be miniaturized. Further, since the opening portion at the rear end of the photoelectric conversion tube 151 is substantially on the optical axis LA of the pixel P, the distance to the adjacent pixel P can be secured. That is, the photoelectric conversion tube 151 is a compact version of the photoelectric conversion unit 150, performs photoelectric conversion inside the photoelectric conversion tube 151, and the opening at the rear end corresponds to the light exit 106a. Therefore, the photoelectric conversion tube 151 is one embodiment of the photoelectric conversion section 150 . This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
  • the volume of the photoelectric conversion tube 151 can be increased or decreased accordingly by adjusting the opening area of the light inlet 104a.
  • the opening area of the light inlet 104a may be formed wide, and the opening area of the rear end of the photoelectric conversion tube 151 may be formed narrower than the light inlet 104a.
  • the rear end of the photoelectric conversion tube 151 may be provided with a light exit light blocking film 106 in which the light exit opening 106a is formed narrower than the light entrance opening 104a.
  • the structure of the photoelectric conversion tube 151 is the same in other embodiments described below. Other than the above, since it is the same as the first embodiment, the description is omitted.
  • FIG. 7A the pixel separation wall 130 is erected from the peripheral edge of the light inlet 104a which is wide open. Then, the pixel separation wall 130 extends obliquely downward to a position including the n-type semiconductor region 120n to surround the four side surfaces of the photodiode 120 . Accordingly, the region of the photodiode 120 surrounded by the pixel separation wall 130 is different from the first embodiment in that a photoelectric conversion portion 150 having a substantially quadrangular pyramid shape narrowed in the optical axis LA direction is formed. .
  • the direction of reflection of the incident light H on the inner wall of the photoelectric conversion unit 150 can be directed toward the incident light shielding film 104 . Therefore, the path length of the incident light H reflected on the inner wall of the photoelectric conversion section 150 can be further increased. This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
  • the four side surfaces of the pixel separation wall 130 provided upright on the periphery of the incident light shielding film 104 are obliquely extended, respectively, so that the photoelectric conversion units 150 forms a substantially quadrangular pyramid shape.
  • the four pixel separation walls 130 two opposing sides are extended obliquely and the remaining two opposing sides are extended parallel to form the photoelectric conversion part 150 in a substantially trapezoidal shape. good too.
  • the focal length of the microlens 101 does not necessarily have to be precisely matched to the opening position of the light inlet 104a. Moreover, since the incident light shielding film 104 has a large opening, a sufficient amount of incident light H can be obtained. Other than the above, since it is the same as the first embodiment, the description is omitted.
  • FIG. 1 A pixel separation wall 130 is erected from the periphery of the light shielding film 104 having holes. Then, the pixel separation wall 130 extends obliquely downward to a position including the n-type semiconductor region 120n to surround the four side surfaces of the photodiode 120 .
  • This differs from the first embodiment in that the region of the photodiode 120 surrounded by the pixel separation wall 130 is formed in a substantially quadrangular pyramid shape that narrows in the optical axis LA direction.
  • the light entrance opening 104a of the light entrance shielding film 104 is a small rectangular hole as in the first embodiment.
  • the direction of reflection of the incident light H on the inner wall of the photoelectric conversion unit 150 can be directed toward the incident light shielding film 104 . Therefore, the path length of the incident light H reflected on the inner wall of the photoelectric conversion section 150 can be further increased. This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
  • the pixel separation wall 130 surrounds the four side surfaces of the photodiode 120, and one of the four side surfaces of the pixel separation wall 130 is oblique along the optical axis direction.
  • the region of the photodiode 120 surrounded by the pixel separation wall 130 can be formed in a substantially trapezoidal shape. good.
  • the description is omitted.
  • the focal length of the microlens 101 does not necessarily have to be precisely aligned with the opening position of the light inlet 104a as in the first embodiment. Moreover, since the incident light blocking film 104 has a large opening for the incident light 104a, a sufficient amount of incident light H can be obtained. This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented. Other than the above, since it is the same as the first embodiment, the description is omitted.
  • the pixel separation wall 130 is erected from the peripheral edge of the light shielding film 104 provided for each pixel P, and is extended downward to form the pixel separation wall 130 p.
  • a first light output shielding film 106 extending to a predetermined position of the semiconductor region 120p and having a light output port 106a is provided.
  • the photoelectric conversion unit 150 extends the pixel separation wall 130 downward to a position including the n-type semiconductor region 120n.
  • another second light exit light shielding film 106 having a light exit opening 106a is disposed at the rear end thereof, and is formed in a substantially rectangular shape. That is, two photoelectric conversion units 150 are provided by providing two output light shielding films 106 . The above points are different from the first embodiment.
  • the focal length of the microlens 101 does not necessarily have to be precisely matched to the opening position of the light inlet 104a as in the first embodiment.
  • the focal length may be adjusted to the light exit opening 106 a of the first light exit light shielding film 106 .
  • the incident light blocking film 104 has a large opening for the incident light 104a, a sufficient amount of incident light H can be obtained.
  • the photoelectric conversion section 150 has a section defined by the incident light blocking film 104 and the first output light blocking film 106 and a section defined by the first output light blocking film 106 and the second output light blocking film 106. has two photoelectric conversion areas. Therefore, the path length of the incident light H for photoelectric conversion can be lengthened. This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented. Other than the above, since it is the same as the first embodiment, the description is omitted.
  • FIG. 11 an eighth embodiment of the photodetector 100 according to the present disclosure will be described based on FIG. 11 .
  • a pixel separation wall 130 is erected from the peripheral edge of the incident light shielding film 104 .
  • Approximately rectangular photoelectric conversion section 150 is formed by extending this downward to a position including n-type semiconductor region 120n and arranging light output shielding film 106 having light output port 106a.
  • the photoelectric conversion unit 150 extends the pixel separation wall 130 downward to the rear end of the photodiode 120 to surround the four side surfaces of the entire photodiode 120 and has an open rear end. It is formed in a substantially rectangular tubular body. The above points are different from the first embodiment.
  • the electrons e generated by photoelectric conversion that pass through the light exit opening 106a of the light exit light shielding film 106 are surrounded by the pixel separation walls 130 on four sides, so that the adjacent pixel P photo Migration to diode 120 is blocked. This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
  • the description is omitted.
  • FIG. 12 a ninth embodiment of the photodetector 100 according to the present disclosure will be described.
  • a pixel separation wall 130 is erected from the peripheral edge of the incident light shielding film 104 .
  • Approximately rectangular photoelectric conversion section 150 is formed by extending this downward to a position including n-type semiconductor region 120n and arranging light output shielding film 106 having light output port 106a.
  • the photoelectric conversion unit 150 extends downward from the pixel separation wall 130 to the rear end of the photodiode 120 to surround the four sides of the entire photodiode 120, and the rear end is open. is formed in a substantially rectangular cylindrical body.
  • a pixel separation wall 130 is erected from the periphery of the light entrance 104a of the light entrance shielding film 104, and is extended downward to form a substantially square shape with an open rear end inside the photoelectric conversion section 150.
  • a photoelectric conversion tube 151 formed in a cylindrical body is formed. That is, the pixel separation wall 130 surrounds the four side surfaces and the rear surface of the photodiode 120, and the photoelectric conversion tube is formed in the photoelectric conversion section 150 in a substantially square cylindrical shape with the rear end open. 151 is formed to form a double box structure. The above points are different from the first embodiment and the eighth embodiment.
  • the incident light H is photoelectrically converted while being reflected inside the photoelectric conversion tube 151 formed between the incident light shielding film 104 and the output light shielding film 106 .
  • the incident light H that has passed through the photoelectric conversion tube 151 is similarly photoelectrically converted inside the photoelectric conversion unit 150 formed in the next stage.
  • the electrons e generated by photoelectric conversion that have passed through the light exit port 106a are surrounded by the pixel separation walls 130 on four sides as in the eighth embodiment. Movement is blocked. This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented. Other than the above, since it is the same as the first embodiment, the description is omitted.
  • FIG. 13 is a cross-sectional end view of the X3-X3 portion of the single pixel P when an epitaxial (EPI) process flow is used on a silicon (100) plane substrate.
  • FIG. 14 is a diagram of a silicon (111) plane substrate using an ESS (Empty Space in Silicon, hereinafter referred to as “ESS”) process flow.
  • ESS Extra Space in Silicon
  • FIGS. 13 and 14 are cases in which both the light entrance opening 104a and the light exit opening 106a are opened on the optical axis LA of the pixel P.
  • FIG. 14 the light inlet 104a and the light outlet 106a are arranged at an angle of 45 degrees with respect to the arrangement of the pixels P.
  • the shape of the opening of the light exit port 106a is not limited to a rectangle, and may be a circle or the like. Details of the EPI process flow and the ESS process flow will be described later.
  • a rear edge shielding film 107 having a transfer transistor gate 121 is arranged at the rear end of the extended pixel separation wall 130 .
  • a substantially rectangular photoelectric conversion section 150 is formed. That is, the pixel separation wall 130 surrounds the four side surfaces of the entire photodiode 120 , and the rear end light shielding film 107 surrounds the rear surface instead of the light output light shielding film 106 .
  • the above points are different from the first embodiment.
  • the incident light H that has passed through the light inlet 104a is reflected between the inner walls of the pixel separation walls 130, the light shielding film 104, and the rear end shielding film 107 of the photoelectric conversion unit 150. photoelectrically converted.
  • the electrons e generated by photoelectric conversion are surrounded on four sides by the pixel separation walls 130, and the rear end is separated by the rear end light shielding film 107, so that the photodiode of the adjacent pixel P 120 is blocked. This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
  • the description is omitted.
  • a rear end light shielding film 107 having a transfer transistor gate 121 arranged at the rear end of the extended pixel separation wall 130 is provided.
  • a substantially rectangular photoelectric conversion section 150 is formed.
  • a light exit light shielding film 106 is arranged at a position including the n-type semiconductor region 120n of the photodiode 120 so that the light exit opening 106a is shifted from the optical axis LA.
  • the opening position of the light exit port 106 a is preferably shifted to a position farther than the transfer transistor gate 121 . That is, the pixel separation wall 130 and the rear light shielding film 107 surround the four side surfaces and the rear surface of the entire photodiode 120 . The above points are different from the first embodiment.
  • the incident light H that has passed through the light inlet 104a is photoelectrically converted while being reflected between the inner walls of the pixel separation walls 130, the light entrance shielding film 104, and the exit light shielding film 106 of the photoelectric conversion unit 150.
  • FIG. Furthermore, the electrons e generated by photoelectric conversion are surrounded on four sides by the pixel separation walls 130, and the rear end is separated by the rear end light shielding film 107, so that the photodiode 120 of the adjacent pixel P receives the electrons e. prevented from moving. This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
  • the description is omitted.
  • FIG. 17 is a cross-sectional end view of the X3-X3 portion of the single pixel P when the EPI process flow is used on the substrate of the (100) plane of silicon.
  • FIG. 18 is a cross-sectional end view of the X3-X3 portion of the single pixel P when the ESS process flow is used on the substrate of the (111) plane of silicon.
  • FIGS. 17 and 18 are cases in which the light outlet 106a is opened at a position shifted from the optical axis LA of the pixel P.
  • the shape of the opening of the light exit port 106a is not limited to a rectangle, and may be a circle or the like. Details of the EPI process flow and the ESS process flow will be described later.
  • the pixel separation wall 130 is directly extended downward, and a second light output light shielding film having a light output port 106a opened at a position including the n-type semiconductor region 120n of the photodiode 120 is formed. 106 is provided. Further, the pixel separation wall 130 is extended downward to the rear end of the photodiode 120 as it is. A rear light shielding film 107 having a transfer transistor gate 121 is provided at the rear end of the pixel separation wall 130 . Thus, a substantially rectangular photoelectric conversion portion 150 is formed.
  • the pixel separation wall 130 and the rear end light shielding film 107 surround the four side surfaces and the rear surface of the entire photodiode 120, and two photoelectric conversion units 150 are provided by providing two light output light shielding films 106.
  • FIG. The above points are different from the first embodiment.
  • the focal length of the microlens 101 does not necessarily have to be precisely matched to the opening position of the light inlet 104a as in the first embodiment.
  • the focal length may be adjusted to the light exit opening 106 a of the first light exit light shielding film 106 .
  • the incident light shielding film 104 since the incident light shielding film 104 has a large opening, a sufficient amount of incident light H can be obtained.
  • a section defined by the incident light shielding film 104 and the first light output shielding film 106 and a section defined by the first light output shielding film 106 and the second light output shielding film 106 are provided.
  • the second light shielding film 106 and the rear end light shielding film 107 which are areas for performing photoelectric conversion. Therefore, the path length of the incident light H can be lengthened.
  • the incident light H that has passed through the incident light shielding film 104 is photoelectrically converted at some point in the three photoelectric conversion sections.
  • the electrons e generated by photoelectric conversion are surrounded on four sides by the pixel separation walls 130, and the rear end is separated by the rear end light shielding film 107, so that the photodiode of the adjacent pixel P 120 is blocked. This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
  • the description is omitted.
  • a pixel separation wall 130 is erected from the periphery of the incident light shielding film 104, and extends downward to form a light output shielding film 106 having a light exit opening 106a at a position including the n-type semiconductor region 120n. It is
  • the pixel separation wall 130 is extended downward to the rear end of the photodiode 120 as it is.
  • a rear light shielding film 107 having a transfer transistor gate 121 is provided at the rear end of the pixel separation wall 130 .
  • a substantially rectangular photoelectric conversion portion 150 is formed. That is, the pixel separation wall 130 and the rear light shielding film 107 surround the four side surfaces and the rear surface of the entire photodiode 120 . The above points are different from the first embodiment.
  • the incident light H that has passed through the light inlet 104a is photoelectrically converted while being reflected between the inner wall of the photoelectric conversion unit 150, the incident light blocking film 104, and the outgoing light blocking film .
  • the electrons e generated by photoelectric conversion are surrounded on four sides by the pixel separating wall 130 and the outgoing light shielding film 106, and the pixels are separated by the rear edge shielding film 107 at the rear end.
  • the photodiode 120 of pixel P is blocked from moving. This can prevent electrical crosstalk. At the same time, optical crosstalk can also be prevented.
  • the description is omitted.
  • a fourteenth embodiment of the photodetector 100 according to the present disclosure will be described based on FIG.
  • a pixel separation wall 130 is erected from the periphery of the incident light shielding film 104, and extends downward to form a light output shielding film 106 having a light exit opening 106a at a position including the n-type semiconductor region 120n. It is
  • the pixel separation wall 130 is extended downward to the rear end of the photodiode 120 as it is.
  • a rear light shielding film 107 having a transfer transistor gate 121 is provided at the rear end of the pixel separation wall 130 .
  • a substantially rectangular photoelectric conversion portion 150 is formed.
  • a pixel separation wall 130 is erected from the periphery of the light entrance port 104a of the light entrance shielding film 104 and extended downward to form a substantially cylindrical body with an open rear end inside the photoelectric conversion unit 150.
  • a photoelectric conversion tube 151 is formed. That is, the pixel separation wall 130 surrounds the four side surfaces and the rear surface of the photodiode 120, and the photoelectric conversion tube is formed in the photoelectric conversion section 150 in a substantially square cylindrical shape with the rear end open. 151 is formed to form a double box structure. The above points are different from the first embodiment and the ninth embodiment.
  • the incident light H that has passed through the light inlet 104a is photoelectrically converted while being reflected inside the photoelectric conversion tube 151 formed between the incident light shielding film 104 and the output light shielding film 106 . Further, the incident light H that has passed through the photoelectric conversion tube 151 is similarly photoelectrically converted inside the photoelectric conversion section 150 formed in the next stage.
  • the photodetection device 100 As described above, according to the photodetection device 100 according to the present disclosure, it is possible to provide a photodetection imaging device that suppresses electrical crosstalk. At the same time, optical crosstalk can be suppressed and quantum efficiency can be improved.
  • FIG. 22 is an explanatory diagram of a method for manufacturing the trenches 111, the pixel separation walls 130, and the incident light shielding film 104 by the EPI process of the photodetector 100 according to the present disclosure.
  • 23A and 23B are explanatory diagrams of a method for manufacturing the photodetector device 100 according to the present disclosure by the ESS process.
  • a semiconductor substrate 110 is prepared.
  • a (100) plane substrate of a silicon (Si) single crystal is used.
  • a mask 401 is formed on the semiconductor substrate 110 with a photoresist in a region to be the light entrance 104a of the light shielding film 104. As shown in FIG. 22A, a semiconductor substrate 110 is prepared.
  • a (100) plane substrate of a silicon (Si) single crystal is used.
  • a mask 401 is formed on the semiconductor substrate 110 with a photoresist in a region to be the light entrance 104a of the light shielding film 104.
  • an oxide film such as silicon dioxide (SiO 2 ) or a metal film such as tungsten (W) is formed on the semiconductor substrate 110 .
  • This metal film becomes the incident light shielding film 104 .
  • the photoresist mask 401 is removed. As a result, a pattern in which the oxide film or the metal film is not formed is formed in the region of the light entrance shielding film 104 that will become the light entrance opening 104a.
  • silicon is grown by the EPI process on the semiconductor substrate 110 on which the pattern of the oxide film or metal film that will be the incident light shielding film 104 is formed.
  • the semiconductor substrate 110 is turned 180 degrees, that is, turned upside down, and a mask 402 is formed on the semiconductor substrate 110 with a photoresist for areas that will become the trenches 111 of the pixel separation walls 130 .
  • the silicon of the semiconductor substrate 110 is dug by etching or the like. As a result, the silicon in the regions not masked by the mask 402 is removed to form the trenches 111 that will become the pixel isolation walls 130 .
  • the mask 402 on the semiconductor substrate 110 in which the trenches 111 are formed is removed, and an oxide film or metal film is grown by an EPI process.
  • pixel isolation walls 130 made of an oxide film or a metal film are formed inside the trenches 111 .
  • the trenches 111 that become the light shielding films 104 and the pixel separation walls 130 can be formed. It should be noted that other manufacturing processes can be formed by using conventional manufacturing techniques or by adding a slight change, so description thereof will be omitted.
  • a semiconductor substrate 110 is prepared.
  • a (111) plane substrate of a silicon (Si) single crystal is used.
  • a tetraethyl orthosilicate (TEOS: tetraethoxysilane, hereinafter referred to as "TEOS”) film is formed on the semiconductor substrate 110, and a mask 403 is formed in a region to be the pixel separation wall 130 with a photoresist.
  • TEOS tetraethyl orthosilicate
  • the TEOS film 404 and the silicon of the semiconductor substrate 110 are etched by dry processing to form trenches 111 .
  • the inner surface of the trench 111 is etched by chemical dry etching (CDE).
  • a TEOS film 404 is formed on the inner surfaces of the trenches 111 .
  • the TEOS film 404 on the bottom of the trench 111 is removed by etchback.
  • silicon is removed from the bottom surface of the trench 111 in an inverted T shape by alkali etching or the like. As a result, trenches 111 that become the pixel separation walls 130 and spaces that become the incident light shielding film 104 are formed.
  • a space of the ESS that becomes the light shielding film 104 and the pixel separation wall 130 can be formed.
  • the space formed in this way which becomes the trench 111 and the light shielding film 104, can serve as the pixel separation wall 130 even if the space is not filled with air.
  • Silicon has a much higher refractive index than that of air.
  • the refractive index is about 4 when the wavelength of the incident light H is 550 nm. Therefore, since the difference in refractive index from that of air is very large, the light once incident on the silicon substrate is repeatedly reflected within the silicon substrate and does not come out to the outside. Therefore, the incident light H can be easily confined.
  • the manufacturing steps other than this can be manufactured by using conventional manufacturing techniques or by adding a slight change, so description thereof will be omitted.
  • FIG. 24 is an explanatory diagram of an example of processing the semiconductor substrate 110 with a cluster beam.
  • a mask 401 is formed on the surface of the semiconductor substrate 110 placed inside the chamber 440 .
  • the chamber 440 is partitioned by a collimation 441 with a nozzle 444 located to the left of the partition.
  • a nozzle 444 ejects a cluster 450 of atoms or molecules 451 through a small hole 442 opened in collimation 441 .
  • the injected cluster 450 collides with the semiconductor substrate 110 whose surface is covered with the mask 401, the portion not covered with the mask 401 is etched.
  • the trench 111 forming the pixel separation wall 130 can also be formed using such a processing method, for example.
  • FIG. 25 is an explanatory diagram of an example in which the semiconductor substrate 110 is obliquely etched by a cluster beam.
  • a semiconductor substrate 110 whose surface is covered with a mask 401 is placed obliquely in a chamber 440 .
  • Nozzle 444 projects clusters 450 of atoms or molecules 451 through small holes 442 formed in collimation 441 .
  • the injected cluster 450 obliquely collides with the semiconductor substrate 110 whose surface is covered with the mask 401, the portion not covered with the mask 401 is obliquely etched. In this manner, by emitting the cluster beam while the semiconductor substrate 110 is tilted, it is possible to perform oblique etching.
  • the trenches 111 for obliquely extending the pixel separation walls 130 can be formed by the processing method described above.
  • Configuration example of electronic device> An application example of the photodetector 100 according to the above embodiment to an electronic device will be described with reference to FIG. 26 . This application example is common to the photodetector 100 according to the first to fourteenth embodiments.
  • the photodetector 100 includes an image capture unit (photoelectric conversion function) such as an imaging device 200 such as a digital still camera or a video camera, a mobile terminal device having an imaging function, or a copying machine using the photodetector 100 as an image reading unit. ) can be applied to electronic equipment in general.
  • the photodetector 100 may be formed as a single chip, or may be a packaged photodetector 100 . Further, it may be in a module form having an imaging function in which an imaging section and a signal processing section or an optical system are packaged together.
  • an imaging device 200 as an electronic device includes an optical unit 202, a photodetector 100, a DSP (Digital Signal Processor) circuit 203 as a camera signal processing circuit, a frame memory 204, and a display unit. 205 , a recording unit 206 , an operation unit 207 , and a power supply unit 208 .
  • the DSP circuit 203, frame memory 204, display unit 205, recording unit 206, operation unit 207 and power supply unit 208 are interconnected via a bus line 209 comprising signal lines and feed lines.
  • the optical unit 202 includes a plurality of lenses, takes in incident light (image light) H from the subject, and forms an image on the imaging surface of the photodetector 100 .
  • the photodetector 100 converts the amount of incident light H imaged on the imaging surface by the optical unit 202 into an electric signal for each pixel, and outputs the electric signal as a pixel signal.
  • the display unit 205 is, for example, a panel type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and displays moving images or still images captured by the photodetector 100 .
  • a recording unit 206 records a moving image or still image captured by the photodetector 100 in a recording medium such as a hard disk or a semiconductor memory.
  • the operation unit 207 issues operation commands for various functions of the imaging device 200 under the user's operation.
  • the power supply unit 208 appropriately supplies various power supplies as operating power supplies for the DSP circuit 203, the frame memory 204, the display unit 205, the recording unit 206, and the operation unit 207 to these supply targets.
  • a high-quality captured image can be obtained because the photodetector 100 that suppresses electrical crosstalk in photoelectric conversion is used.
  • a photoelectric conversion element including a photoelectric conversion unit that performs photoelectric conversion; a light-receiving lens provided for each pixel on the light-receiving surface side of the photoelectric conversion element; a light shielding film disposed opposite to the light receiving lens, disposed on the side of the photoelectric conversion element facing the light receiving lens, and having a light inlet for incident light condensed by the light receiving lens; a light output light shielding film disposed opposite to the light input light shielding film and disposed on the opposite side of the photoelectric conversion element from the light receiving lens side, the light output light shielding film having a light output port for light passing through the photoelectric conversion element; a pixel separation wall connecting peripheral edges of the incident light shielding film and the exit light shielding film and surrounding at least a portion of the photoelectric conversion element; A photodetector having (2)
  • the photoelectric conversion unit includes a photoelectric conversion tube formed by the pixel separation wall extending along the optical axis direction from the peripheral edge of
  • a photoelectric conversion element including a photoelectric conversion unit that performs photoelectric conversion; a light-receiving lens provided for each pixel on the light-receiving surface side of the photoelectric conversion element; a light shielding film disposed opposite to the light receiving lens, disposed on the side of the photoelectric conversion element facing the light receiving lens, and having a light inlet for incident light condensed by the light receiving lens; A light exit opening for light that has passed through the photoelectric conversion element is provided facing the light entrance shielding film, and the peripheral edge of the light entrance shielding film or the periphery of the light entrance aperture of the light entrance shielding film and the periphery of the light exit aperture is provided.
  • the pixel separation wall surrounds the four side surfaces of the photoelectric conversion element, and one of the four side surfaces of the pixel separation wall, which is one of the four side surfaces, extends obliquely along the optical axis direction, The two side surfaces of the photoelectric conversion element extend along the optical axis direction, so that the portion of the photoelectric conversion element surrounded by the pixel separation wall is formed in a substantially trapezoidal shape.
  • Photodetector (7) The photodetector according to any one of (1) to (3), wherein the light entrance opening of the light entrance shielding film is wider than the light exit opening of the light exit light shielding film or the photoelectric conversion section.
  • the light entrance opening of the light entrance shielding film and the light exit opening of the light exit light shielding film or the photoelectric conversion unit are arranged on the optical axis of the light receiving lens according to any one of (1) to (9) above. 3.
  • the light entrance opening of the light entrance light shielding film and the light exit light shielding film or the light exit opening of the photoelectric conversion unit are arranged to be offset from the optical axis of the light receiving lens (1) to (9). ).
  • the light entrance opening of the light entrance light shielding film and the light exit light shielding film or the light exit opening of the photoelectric conversion unit are disposed obliquely with respect to the optical axis of the light receiving lens.
  • the photodetector according to any one of (9).
  • the light detection device according to any one of (1) to (12), wherein the light entrance opening of the light entrance shielding film, the light exit light shielding film, or the light exit opening of the photoelectric conversion section is formed in a circular shape.
  • the pixel separation wall or the light shielding film is made of silicon nitride (Si 3 N 4 ), silicon dioxide (SiO 2 ), tungsten (W), aluminum (Al), or air.
  • the light shielding film is made of silicon nitride (Si 3 N 4 ), silicon dioxide (SiO 2 ), tungsten (W), aluminum (Al), or air. ) to (15) above.
  • a photoelectric conversion element including a photoelectric conversion unit that performs photoelectric conversion; a light-receiving lens provided for each pixel on the light-receiving surface side of the photoelectric conversion element; a light shielding film disposed opposite to the light receiving lens, disposed on the side of the photoelectric conversion element facing the light receiving lens, and having a light inlet for incident light condensed by the light receiving lens; a light output light shielding film disposed opposite to the light input light shielding film and disposed on the opposite side of the photoelectric conversion element from the light receiving lens side, the light output light shielding film having a light output port for light passing through the photoelectric conversion element; a pixel separation wall connecting peripheral edges of the incident light shielding film and the exit light shielding film and surrounding at least a portion of the photoelectric conversion element; or a photoelectric conversion element including a photoelectric conversion unit that performs photoelectric conversion; a light-receiving lens provided for each pixel on the light-receiving surface side of the photoelectric conversion element;
  • REFERENCE SIGNS LIST 100 photodetector 101 microlens 102 color filter 102R red filter layer 102G green filter layer 102B blue filter layer 103 planarizing film 104 light incident light shielding film 104a light entrance 106 light exit light shielding film 106a light exit 107 rear light shielding film 110 semiconductor substrate 111 trench 120 photodiode 120p p-type semiconductor region 120n n-type semiconductor region 121 transfer transistor gate 122 diffusion capacitor 124 via 130 pixel separation wall 150 photoelectric conversion unit 151 photoelectric conversion tube 200 imaging device 300 wiring layer 301 wiring 302 wiring 320 support substrate 401 Mask 402 Mask 403 Mask 404 TEOS film 440 Chamber 441 Collimation 442 Small hole 444 Nozzle 450 Cluster 451 Atom or molecule H Incident light P Pixel LA Optical axis e Electron

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Abstract

L'invention concerne : un dispositif de détection de lumière permettant de supprimer une diaphonie électrique de conversion photoélectrique ; et un appareil électronique utilisant le dispositif de détection de lumière. Le dispositif de détection de lumière est conçu pour comprendre : un élément de conversion photoélectrique comportant une partie de conversion photoélectrique qui assure une conversion photoélectrique ; une lentille de réception de lumière disposée dans chaque pixel d'un côté surface de réception de lumière de l'élément de conversion photoélectrique ; un film de blocage de lumière entrante qui est disposé à l'opposé de la lentille de réception de lumière et qui est également disposé du côté lentille de réception de lumière de l'élément de conversion photoélectrique, et qui comporte une entrée de lumière permettant une entrée de la lumière condensée par la lentille de réception de lumière ; un film de blocage de lumière sortante qui est disposé à l'opposé du film de blocage de lumière entrante et qui est également disposé du côté opposé au côté lentille de réception de lumière de l'élément de conversion photoélectrique, et qui comporte une sortie de lumière de la lumière qui a traversé l'élément de conversion photoélectrique ; et une paroi de séparation de pixels qui relie l'un à l'autre les bords périphériques du film de blocage de lumière entrante et du film de blocage de lumière sortante, et qui entoure au moins une partie de l'élément de conversion photoélectrique.
PCT/JP2022/040534 2021-11-12 2022-10-28 Dispositif de détection de lumière et appareil électronique WO2023085132A1 (fr)

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Citations (9)

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