Classifications

• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
  • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
  • C08F220/10—Esters
  • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
  • C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F8/00—Chemical modification by after-treatment
  • C08F8/12—Hydrolysis
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
  • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
  • C08F220/10—Esters
  • C08F220/12—Esters of monohydric alcohols or phenols
  • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
  • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F220/1806—C6-(meth)acrylate, e.g. (cyclo)hexyl (meth)acrylate or phenyl (meth)acrylate
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
  • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
  • C08F220/10—Esters
  • C08F220/12—Esters of monohydric alcohols or phenols
  • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
  • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F220/1807—C7-(meth)acrylate, e.g. heptyl (meth)acrylate or benzyl (meth)acrylate
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
  • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
  • C08F220/10—Esters
  • C08F220/12—Esters of monohydric alcohols or phenols
  • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
  • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F220/1818—C13or longer chain (meth)acrylate, e.g. stearyl (meth)acrylate
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
  • C09D133/04—Homopolymers or copolymers of esters
  • C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
  • C09D133/10—Homopolymers or copolymers of methacrylic acid esters
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F2800/00—Copolymer characterised by the proportions of the comonomers expressed
  • C08F2800/10—Copolymer characterised by the proportions of the comonomers expressed as molar percentages
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
  • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
  • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

Definitions

• the invention relates to neutral brush composition for use in directed self-assembly processing.
• BACKGROUND [0002]
• Self-assembly of block copolymers is a method useful for generating smaller and smaller patterned features for the manufacture of microelectronic devices in which the critical dimensions (CD) of features on the order of nanoscale can be achieved.
• Self-assembly methods are desirable for extending the resolution capabilities of microlithographic technology for repeating features such as an array of contact holes or posts.
• UV radiation may be used to expose through a mask onto a photoresist layer coated on a substrate or layered substrate.
• Positive or negative photoresists are useful, and these can also contain a refractory element such as silicon to enable dry development with conventional integrated circuit (IC) plasma processing.
• IC integrated circuit
• UV radiation transmitted through a mask causes a photochemical reaction in the photoresist such that the exposed regions are removed with a developer solution or by conventional IC plasma processing.
• UV radiation transmitted through a mask causes the regions exposed to radiation to become less removable with a developer solution or by conventional IC plasma processing.
• An integrated circuit feature such as a gate, via or interconnect, is then etched into the substrate or layered substrate, and the remaining photoresist is removed.
• the dimensions of features of the integrated circuit feature are limited. Further reduction in pattern dimensions is difficult to achieve with radiation exposure due to limitations related to aberrations, focus, proximity effects, minimum achievable exposure wavelengths and maximum achievable numerical apertures.
• the need for large-scale integration has led to a continued shrinking of the circuit dimensions and features in the devices.
• the final resolution of the features has been dependent upon the wavelength of light used to expose the photoresist, which has its own limitations. Directed (a.k.a.
• the directed self-assembly block copolymer comprises a block of etch resistant copolymeric unit and a block of highly etchable copolymeric unit, which when coated, aligned and etched on a substrate give regions of very high- density patterns.
• This neutral layer over a semiconductor substrate may be an unpattemed neutral layer, or in chemoepitaxy or graphoepitaxy, this neutral layer may contain, respectively, graphoepitaxy or chemoepitaxy guiding features (formed through the above-described UV lithographic technique).
• the underlying, neutral layer directs the nano-phase separation of the block copolymer domains.
• phase separated domains which are lamellas or cylinders perpendicular to the underlying neutral layer surface.
• These nanophase separated block copolymer domains form a pre-pattern (e.g., line and space L/S) which may be transferred into the substrate through an etching process (e.g., plasma etching).
• etching process e.g., plasma etching
• these guiding features may dictate both pattern rectification and pattern multiplication.
• a conventional block copolymer such as poly(styrene-b-methyl methacrylate (P(S-b-MMA)), in which both blocks have similar surface energies at the BCP-air interface
• P(S-b-MMA) poly(styrene-b-methyl methacrylate
• this can be achieved by coating and thermally annealing the block copolymer on a layer of non-preferential or neutral material that is grafted or cross-linked at the polymer-substrate interface.
• the block copolymers self organizes around a substrate that is pre-patterned with conventional lithography (Ultraviolet, Deep UV, e-beam (electron-beam), Extreme UV (EUV) exposure source) to form repeating topographical features such as a line/space (L/S) or contact hole (CH) pattern.
• L/S directed self-assembly array the block copolymer can form self-aligned lamellar regions which can form parallel line-space patterns of different pitches in the trenches between pre-patterned lines, thus enhancing pattern resolution by subdividing the space in the trench between the topographical lines into finer patterns.
• a diblock copolymer or a triblock copolymer which is capable of microphase separation and comprises a block rich in carbon (such as styrene or containing some other element like Si, Ge, Ti) which is resistant to plasma etch, and a block which is highly plasma etchable or removable, can provide a high-resolution pattern definition.
• highly etchable blocks can comprise monomers which are rich in oxygen and which do not contain refractory elements and are capable of forming blocks which are highly etchable, such as methyl methacrylate.
• the plasma etching gases used in the etching process of defining the self-assembly pattern typically are those used in processes employed to make integrated circuits (IC).
• features such as contact holes can be made denser by using graphoepitaxy in which a suitable block copolymer arranges itself by directed self-assembly around an array of contact holes or posts defined by conventional lithography, thus forming a denser array of regions of etchable and etch resistant domains which when etched give rise to a denser array of contact holes. Consequently, graphoepitaxy has the potential to offer both pattern rectification and pattern multiplication.
• the self-assembly of the block copolymer is formed on a surface whose guiding features are regions of differing chemical affinity, having no, or insignificant topography (a.k.a. non-guiding topography) which predicates the directed self-assembly process.
• the surface of a substrate could be patterned with conventional lithography (UV, Deep UV, e-beam, EUV) to create surfaces of different chemical affinity in a line and space (L/S) pattern in which exposed areas whose surface chemistry had been modified by irradiation alternate with areas which are unexposed and show no chemical change.
• Chemical epitaxy has the advantage that it can be fine-tuned by changes in the chemical differences to help improve line-edge roughness and CD control, thus allowing for pattern rectification.
• Other types of patterns such as repeating contact holes (CH) arrays could also be pattern rectified using chemoepitaxy.
• neutral layers are layers on a substrate or the surface of a treated substrate which have no affinity for either of the block segment of a block copolymer employed in directed self-assembly.
• neutral layers are useful as they allow the proper placement or orientation of block polymer segments for directed self-assembly which leads to proper placement of etch resistant block polymer segments and highly etchable block polymer segments relative to the substrate.
• a neutral layer allows block segments to be oriented so that the block segments are oriented perpendicular to the surface of the substrates, an orientation which is ideal for both pattern rectification and pattern multiplication depending on the length of the block segments in the block copolymer as related to the length between the lines defined by conventional lithography. If a substrate interacts too strongly with one of the block segments it would cause it to he flat on that surface to maximize the surface of contact between the segment and the substrate; such a surface would perturb the desirable perpendicular alignment which can be used to either achieve pattern rectification or pattern multiplication based on features created through conventional lithography.
• Modification of selected small areas or pinning of substrate to make them strongly interactive with one block of the block copolymer and leaving the remainder of the surface coated with the neutral layer can be useful for forcing the alignment of the domains of the block copolymer in a desired direction, and this is the basis for the pinned chemoepitaxy or graphoepitaxy employed for pattern multiplication.
• the pinning area may be one which is hydrophilic having a greater affinity for example to polar block copolymer segments such as the polymethyl methacrylate block segment in a block copolymer of styrene and methyl methacrylate or alternatively be a pinning area which may be hydrophobic having a greater affinity for example to the polystyrene block segments in a block copolymer of styrene and methyl methacrylate.
• Neutral brushes based on PS-b-PMMA prepared by anionic polymerization are also known, however these materials have a hydrophobicity which is not easily tunable.
• polymers and copolymers based on alkyl or aryl methacrylate, such as benzyl methacrylate without graftable end groups prepared by radical polymerization and having high polydispersity are known, there is a need for such polymers in DSA application which have a reactive end group and narrow polydispersity.
• Such materials are needed not only because they could potentially form uniform neutral layers, but also because they could easily have their hydrophobicity finely tuned by varying the ratio of alkyl to aryl methacrylate repeat units.
• Such tunable material would not only solve the problem of lack of neutral layer uniformity in DSA LiNe flow processes, but also prevent the problem of missing DSA guide pattern disruptions, much more efficiently than conventional neutral brushes such as PS-r-MMA-OH or PS-b- MMA-OH.
• FIG. 1 Shows a representative copolymer, which would be obtained with a hydroxyl protected diphenylethylene as initiator adduct with sec-BuLi.
• FIG. 2 Shows a copolymer which would be obtained by initiation with a sec-BuLi 1,1 — diphenylethene adduct, but which is capped with a protected 2-hydroxyethyl 2-phenylacrylate and terminated.
• FIG. 3 Shows 1FOV SEM images of each fingerprint pattern on a silicon wafer using A) PS-b- PMMA on P(BnMA-r-BPMA 25% )-OH (Mn: 13K, brush FT: 4.2 run ⁇ 0.3, WCA: 81.0 ⁇ 2.3) B) PS-b-PMMA on P(BnMA-r-CHMA 25% )-OH(Mn: 23K, brush FT: 3.8 nm ⁇ 0.3, WCA: 79.4 ⁇ 0.5) C) PS-b-PMMA on P(BnMA-r-AMMA 20% -OH) (Mn: ⁇ 7.0K, brush FT: 7.9 nm ⁇ 0.3, WCA: 80.8 ⁇ 0.5).
• One aspect of this invention is novel graftable copolymers which, depending on the composition of alkyl or aryl substituted methacrylate monomer with repeat units such as benzyl methacrylate and its derivatives, can have their neutrality tuned either towards hydrophilic or hydrophobic enhancement in how it interacts with the polar or non-polymer block copolymer segments in block copolymers such as PS-b- PMMA block copolymer.
• One approach to these polymers is to use novel hydroxyl protected diphenylethylene as initiator adduct with sec-BuLi to initiate (alkyl or aryl) methacrylates to form well- defined pre-determined molecular weight brushes with low polydispersity for perpendicular assembly of block copolymers such as PS-b-PMMA type di- or multi-block copolymers.
• Another approach in this invention is to employ a standard alkyl lithium initiator but to terminate the living polymer chain with a protected hydroxyalkyl 2-arylacryalte, such as a protected 2-hydroxyethyl 2-phenylacrylate, forming also well-defined pre-determined molecular weight brushes with low polydispersity.
• FIG.1 and FIG.2 show representative specific examples of such materials.
• FIG. 1 shows a representative copolymer, which would be obtained with a hydroxyl protected diphenylethylene as initiator adduct with sec-BuLi.
• FIG.2. Shows a copolymer which would be obtained by initiation with a sec-BuLi 1,1-diphenylethene adduct, but which is capped with a protected 2- hydroxyethyl 2-phenylacrylate and terminated.
• this invention describes a random copolymer of structure (A), comprising: • a repeat unit of structure (I), where R m1 is a C-1 to C-8 alkyl, R1 is a benzylic comprising moiety of structure (V) wherein R benz is a substituent individually selected from H, a C-1 to C-4 alkyl, and a C-1 to C- 4 alkoxy, L 3 is a C-1 to C-4 alkylene, and “ *” designates the attachment point of the this substituent to this repeat unit, and n 1 designates the number of this repeating unit in the copolymer, and further where the mole % of this repeat unit is from about 40 mole % to about 100 mole %, • a repeat unit of structure (II), wherein , R m2 is a C-1 to C-8 alkyl, R 2 is a moiety selected from a C- 1 to C-20 linear alkyl, a C-3 to C-20 branched
• Another aspect of this invention is a composition comprising an inventive polymer of structure (A) and an organic spin casting solvent, wherein said copolymer is one wherein either end group (III) is present and R5 is H or end group (IV) is present, and R7 is H.
• a further aspect of this invention a processes of grafting said inventive composition comprising the copolymer of structure (A) on a substrate and using this grafted layer as a neutral layer in directed self- assembly (DSA) processing.
• the conjunction “and” is intended to be inclusive and the conjunction “or” is not intended to be exclusive unless otherwise indicated.
• the phrase “or, alternatively” is intended to be exclusive.
• the term “and/or” refers to any combination of the foregoing elements including using a single element.
• C-1 to C-4 alkyl embodies methyl and C-2 to C-4 linear alkyls and C-3 to C-4 branched alkyl moieties, for example as follows: methyl(-CH3), ethyl (-CH2-CH3), n-propyl (-CH2-CH2-CH3), isopropyl (-CH(CH3)2, n-butyl (-CH2-CH2-CH2-CH3), tert-butyl (-C(CH3)3), isobutyl (CH2-CH(CH3)2, 2- butyl (-CH(CH3)CH2-CH3).
• C-1 to C-8 embodies methyl C-2 to C-8 linear, C-3 to C-8 branched alkyls, C-4 to C-8 cycloalkyls (e.g., cyclopentyl, cyclohexyl etc) or C-5-C-8 alkylenecycloalkyls (e.g., -CH2-cyclohexyl, CH2-CH2-cyclopentyl etc.
• C-2 to C-5 alkylene embodies C-2 to C-5 linear alkylene moieties (e.g. ethylene, propylene etc.) and C-3 to C-5 branched alkylene moieties (e.g., -CH(CH3)-, -CH(CH3)-CH2-, etc.).
• Di-block and triblock copolymers of styrenic and alkyl 2-methylenealkanoate derived repeat unit moieties useful as components in the inventive compositions described herein may be made by a variety of methods, such as anionic polymerization, atom transfer radical polymerization (ATRP), Reversible additionfragmentation chain transfer (RAFT) polymerization, living radical polymerization and the like (Macromolecules 2019, 52, 2987-2994; Macromol. Rapid Commun. 2018, 39, 1800479; A. Deiter Shluter et al Synthesis of Polymers, 2014, Volume 1, p315; Encyclopedia of Polymer Science and Technology, 2014, Vol 7, p 625.).
• ATRP atom transfer radical polymerization
• RAFT Reversible additionfragmentation chain transfer
• the random copolymer poly(styrene-co-methyl methacrylate) is abbreviated as “P(S-co-MMA),” and the oligomeric version of this materials is abbreviated oligo(S-co-MMA).
• the block copolymer poly(styrene-block-methyl methacrylate) is abbreviated as P(S-b-MMA), while the oligomer of this material is abbreviated as oligo(S-b-MMA).
• FOV is the abbreviation for “field of view” for top-down scanning electron micrographs (SEM) for the SEM FIGs. in this application.
• L/S is an abbreviation for “line and space” lithographic features.
• PGMEA and PGME are respectively abbreviations for 1-methoxypropan-2-yl acetate and 1- methoxypropan-2-ol.
• the section headings used herein are for organizational purposes and are not to be construed as limiting the subject matter described.
• alkyl refers to hydrocarbon groups which can be linear, branched (e.g. methyl, ethyl, propyl, isopropyl, tert-butyl and the like) or cyclic (e.g.
• alkyl refers to such moieties with C-1 to C-8 carbons. It is understood that for structural reasons linear alkyls start with C-1, while branched alkyls and cyclic alkyls start with C-3 and multicyclic alkyls start with C-5. Moreover, it is further understood that moieties derived from alkyls described below, such as alkyloxy and perfluoroalkyl, have the same carbon number ranges unless otherwise indicated.
• Alkyloxy refers to an alkyl group on which is attached through an oxy (-O-) moiety (e.g. methoxy, ethoxy, propoxy, butoxy, 1,2-isopropoxy, cyclopentyloxy cyclohexyloxy and the like). These alkyloxy moieties may be substituted or unsubstituted as described below.
• Halo or halide refers to a halogen, F, Cl, Br or I which is linked by one bond to an organic moiety.
• lactone encompasses both mono-lactones (e.g., caprolactone) and di- lactones (e.g., lactide).
• Haloalkyl refers to a linear, cyclic or branched saturated alkyl group such as defined above in which at least one of the hydrogens has been replaced by a halide selected from the group of F, Cl, Br, I or mixture of these if more than one halo moiety is present. Fluoroalkyls are a specific subgroup of these moieties.
• Perfluoroalkyl refers to a linear, cyclic or branched saturated alkyl group as defined above in which the hydrogens have all been replaced by fluorine (e.g., trifluoromethyl, perfluoroethyl, perfluoroisopropyl, perfluorocyclohexyl and the like).
• fluorine e.g., trifluoromethyl, perfluoroethyl, perfluoroisopropyl, perfluorocyclohexyl and the like.
• hydroxyl protected diphenylethylene refers to diphenylethylene derivatized with a C- 1 to C-8 alkylene hydroxy moiety (-alkylene-OH), on at least one of the aromatic rings, where the hydroxy moiety is functionalized with a protecting group (-alkylene-O-protecting group) such as an acetal (e.g. THP protecting group) or a trialkylsilyl protecting group moiety which will not be cleaved by alkyl alkali (e.g. sec-BuLi) and allow for the formation of the hydroxy protected diphenylethylene initiator adduct with alkyl alkali (e.g. sec-BuLi).
• a protecting group such as an acetal (e.g. THP protecting group) or a trialkylsilyl protecting group moiety which will not be cleaved by alkyl alkali (e.g. sec-BuLi) and allow for the formation of the hydroxy protected diphenylethylene initiator
• this invention describes a random copolymer of structure (A), comprising:
• R mi is a C-1 to C-8 alkyl
• Ri is a benzylic comprising moiety of structure (V) wherein R benz is a substituent individually selected from H, a C-1 to C-4 alkyl, and a C-1 to C- 4 alkoxy, L 3 is a C- 1 to C-4 alkylene, and designates the attachment point of this substituent to this repeat unit, and m designate the number of this repeating unit in the copolymer, and further where the mole % of this repeat unit is from about 40 mole % to about 100 mole %,
• R m2 is a C-1 to C-8 alkyl
• R 2 is a moiety selected from a C-1 to C-20 linear alkyl, a C-3 to C-20 branched alkyl, and a C-5 to C-20 cyclic alkyl, a cyclohexylalkylene moiety of structure (VI), an anthracenylalkylene moiety of structure (VII), a naphthalenylalkylene moiety of structure (VIII), and a biphenyl moiety of structure (VIV), wherein L4 and L5 are independently selected from a C-1 to C-4 alkylene, L6 and L7 are independently selected from a direct valence bond or a C-1 to C- 4 alkylene moiety, R cycl , R anth , R naph , R biph , are substituents individually selected from H, a C-1 to C-4 alkyl, and a C-1 to C-4 alkyl
• said repeat unit of structure (II) is present.
• said repeat unit of structure (II) is one wherein R 2 is a C-1 to C- 20 linear alkyl.
• said repeat unit of structure (II) is one wherein R 2 is a C-3 to C-20 branched alkyl.
• said repeat unit of structure (II) is one wherein R 2 is a C-5 to C-20 cyclic alkyl.
• said repeat unit of structure (II) is one wherein R 2 is a cyclohexylalkylene moiety of structure (VI)
• said repeat unit of structure (II) is one wherein R 2 is an anthracenylalkylene moiety of structure (VII).
• said repeat unit of structure (II) is one wherein R 2 is a naphthalenylalkylene moiety of structure (VIII).
• said repeat unit of structure (II) is one wherein R 2 is a biphenyl moiety of structure (VIV).
• R m1 is a C-1 to C-4 alkyl.
• R m1 is methyl.
• Rm2 is a C-1 to C-4 alkyl.
• Rm 2 is methyl.
• R3 has structure (III) and L1 is a C-1 to C-2 alkylene.
• R3 has structure (III) and L1 is methylene. In yet another aspect of this embodiment, R 3 has structure (III) and R 5 is H. In still another aspect of this embodiment, R3 has structure (III) and R5 is an acetal protecting group. In still another aspect of this embodiment, R 3 has structure (III) and R 5 is a trialkylsilyl protecting group. In yet another aspect of this embodiment, R3 has structure (III) and R6 is a C-1 to C-6 alkyl. In still another aspect of this embodiment, R 3 has structure (III) and R 6 is isobutyl. In still another aspect of this embodiment, R 3 has structure (III) and, Re1 is H.
• R3 has structure (III) and Re1 is a C-1 to C-8 alkyl. In still another aspect of this embodiment, R 3 has structure (III) and R e1 is a C-1 to C-8 alkoxy. In still another aspect of this embodiment, R3 has structure (III) and Re2 is H. In still another aspect of this embodiment, R3 has structure (III) and R e2 is a C-1 to C-8 alkyl. In yet another aspect of this embodiment, R 3 has structure (III) and Re2 a C-1 to C-8 alkoxy. [0041] In another aspect of the inventive copolymer of structure (A), as described herein, R benz is H.
• R benz is a C-1 to C-4 alkyl. In another aspect of this embodiment R benz is a C-1 to C-4 alkoxy.
• L 3 is a C-1 to C- 3 alkylene. In another aspect of this embodiment L 3 is a C-1 to C-2 alkylene. In yet another aspect of this embodiment of this embodiment L 3 is ethylene. In still another aspect of this embodiment of this embodiment L 3 is methylene.
• n said copolymer has structure (A-3), in another aspect of this embodiment, R 2 is a C-1 to C-20 linear alkyl. In yet another aspect of this embodiment R 2 is a C-3 to C-20 branched alkyl. In still another aspect of this embodiment, R 2 is a C-5 to C-20 cyclic alkyl.
• said copolymer has structure (A-4).
• R 2 is a C-1 to C-20 linear alkyl.
• R 2 is a C-3 to C-20 branched alkyl.
• R 2 is a C-5 to C-20 cyclic alkyl:
• said copolymer has structure (A-4d): [0053] In another aspect of the inventive copolymer of structure (A), as described herein, said copolymer has structure (A-5).
• R 2 is a C-1 to C-20 linear alkyl. In another aspect of this embodiment R 2 is a C-3 to C-20 branched alkyl. In still another aspect of this embodiment R 2 is a C-5 to C-20 cyclic alkyl:
• said copolymer has structure (A-8): [0061] In another aspect of the inventive copolymer of structure (A), as described herein, wherein it has structure (A-2), where R4 has structure (IV) and R3 is a moiety of structure (IIIa), L2 is a C-2 to C-4 alkylene. In another aspect of this embodiment, L 2 is 1,3-propylene. In still another aspect of this embodiment, L 2 is ethylene. In another aspect of this embodiment, R7 is H. In still another aspect of this embodiment, R7 is an acetal protecting group. In yet another aspect of this embodiment, R7 is a trialkylsilyl protecting group.
• R 8 is C-1 to C-4 alkyl. In still another aspect of this embodiment, R 8 is H. In still another aspect of this embodiment Re3 is H. In still another aspect of this embodiment, Re3 is a C-1 to C-8 alkyl. In yet another aspect of this embodiment, R e3 is a C-1 to C-8 alkoxy. In still another aspect of this embodiment, R benz is H. In still another aspect of this embodiment, R benz is a C-1 to C-4 alkyl. In yet another aspect of this embodiment, R benz is a C-1 to C-4 alkoxy. [0062] In another aspect of the inventive copolymer of structure (A), as described herein, wherein it has structure (A-2), it has the more specific structure (A-9).
• R 2 is a C-1 to C- 20 linear alkyl. In another aspect of this embodiment, R 2 is a C-3 to C-20 branched alkyl. In still another aspect of this embodiment, R 2 is a C-5 to C-20 cyclic alkyl. [0063] In another aspect of the inventive copolymer of structure (A), as described herein, wherein it has structure (A-2), it has the more specific structure (A-9a):
• R 2 is a C-1 to C-20 linear alkyl. In another aspect of this embodiment R 2 is a C-3 to C-20 branched alkyl. In still another aspect of this embodiment R 2 is a C-5 to C-20 cyclic alkyl:
• R 2 is a C-1 to C- 20 linear alkyl. In another aspect of this embodiment R 2 is a C-3 to C-20 branched alkyl. In still another aspect of this embodiment R 2 is a C-5 to C-20 cyclic alkyl: [0073] In another aspect of the inventive copolymer of structure (A), as described herein, wherein it has structure (A-2), it has the more specific structure (A-11a):
• the inventive copolymer of structure (A), as described herein it is one having an M n from about 500 to about 100,000. In another aspect of this embodiment, it is from about 500 to about 20,000. [0081] In another aspect of the inventive copolymer of structure (A), as described herein, it is one having a polydispersity from 1.0 to about 1.2. In another aspect of this embodiment, it has a polydispersity from 1.0 to about 1.1. In another aspect of this embodiment, it has a polydispersity from 1.0 to about 1.07. In still another aspect of this embodiment it has a polydispersity from 1.0 to about 1.05.
• said repeat unit of structure (II) ranges from about 1 mole % to about 60 mole % of the total repeat units of structure (I) and (II). In another aspect of this embodiment said repeat unit of structure (II) ranges from about 5 mole % to about 50 mole % of the total repeat units of structure (I) and (II). In still another aspect of this embodiment said repeat unit of structure (II) ranges from about 7 mole % to about 40 mole % of the total repeat units of structure (I) and (II).
• said repeat unit of structure (II) ranges from about 9 mole % to about 40 mole % of the total repeat units of structure (I) and (II). In still another aspect of this embodiment said repeat unit of structure (II) ranges from about 10 mole % to about 30 mole % of the total repeat units of structure (I) and (II). In yet another aspect of this embodiment said repeat unit of structure (II) ranges from about 10 mole % to about 25 mole % of the total repeat units of structure (I) and (II). In another aspect of these embodiments, said repeat unit of structure (I) has the more specific structure (Ia).
• said repeat unit of structure (II) has the more specific structure (IIa). In still another aspect of these embodiments said repeat unit of structure (II) has the more specific structure (IIb). In yet another aspect of these embodiments, said repeat unit of structure (II) has the more specific structure (IIc). In still another aspect of these embodiments, said repeat unit of structure (II) has the more specific structure (IId).
• compositions comprising a copolymer of structure (A) [0083] Another aspect of this invention is a composition comprising a copolymer of structure (A) and its substructures, as described herein, and an organic spin casting solvent, wherein said copolymer is one wherein either end group (III) is present and R 5 is H or end group (IV) is present R 7 is H. In one aspect of this embodiment, it is a composition which consists of these two components.
• Suitable solvents for use for the inventive composition comprising a copolymer of structure (A) and its substructures, as described herein are any organic solvent which is employed to spin cast materials such as DSA materials, photoresist, bottom antireflective coatings or other types of organic coatings using the lithographic processing of semiconductor materials.
• the organic spin casting solvent is one which can dissolve said random copolymers and any other additional optional components such as noted herein.
• This organic spin casting solvent may be a single solvent or a mixture of solvents.
• Suitable solvents are organic solvent which may include, for example, a glycol ether derivative such as ethyl cellosolve, methyl cellosolve, propylene glycol monomethyl ether (PGME), diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, dipropylene glycol dimethyl ether, propylene glycol n-propyl ether, or diethylene glycol dimethyl ether; a glycol ether ester derivative such as ethyl cellosolve acetate, methyl cellosolve acetate, or propylene glycol monomethyl ether acetate (PGMEA); carboxylates such as ethyl acetate, n-butyl acetate and amyl acetate; carboxylates of di-basic acids such as diethyloxylate and diethylmalonate; dicarboxylates of glycols such as ethylene glycol diacetate and propylene glycol diacetate; and hydroxy carboxy
• compositions comprising a copolymer of structure (A) Process of forming a coating
• Another aspect of this invention is a process for forming a grafted coating of a copolymer on a substrate comprising the steps: i) forming a coating of a composition comprising a copolymer of structure (A), as describe herein in any one of its embodiments, on a substrate, ii) heating the coating at a temperature from about 90°C to about 180°C to remove solvent.
• step iii) heating the grafted coating of step ii) from about 200°C to about 250°C to form a fully cross-linked or fully crosslinked and grafted copolymer coating.
• Another aspect of this invention is a process for forming a grafted neutral layer coating on a substrate comprising the steps: ia) forming a coating of a composition comprising a copolymer of structure (A), as describe herein in any one of its embodiments, on a substrate iia) heating the coating at a temperature from about 90°C to about 180°C to remove solvent and to form a grafted coating, iiia) heating the grafted coating of step iia) at a temperature from about 200°C to about 250°C to form a fully grafted neutral layer coating.
• A copolymer of structure
• Another aspect of this invention is a process for forming a self-assembled block copolymer coating on a neutral layer coating comprising the steps: ij) forming neutral layer coating according to the process of forming a grafted neutral layer coating as described above, iij) applying a block copolymer over the neutral layer coating and annealing until directed self-assembly of the block copolymer coating occurs.
• Another aspect of this invention is a process of graphoepitaxy, directed self-assembly of a block copolymer coating used to form an image comprising the steps: ik) forming neutral layer coating according to the process of forming a grafted neutral layer coating as described above, iik) providing a coating of a photoresist coating over the neutral layer coating, forming a pattern in the photoresist coating, iiik) applying a block copolymer comprising an etch resistant block and a highly etchable block over the photoresist pattern and annealing until directed self-assembly occurs; and, ivk) etching the block copolymer, thereby removing the highly etchable block of the copolymer overcoating areas of the substrate and simultaneously forming a pattern in the substrate selectively in these
• this process ik) forming neutral layer coating according to the process of forming a grafted neutral layer coating as described above, iik) providing
• Another aspect of this invention is a process of chemoepitaxy, directed self-assembly of a block copolymer coating used to form an image comprising the steps: il) forming neutral layer coating according to the process of forming a grafted neutral layer coating as described above, iil) providing a coating of a photoresist coating over the neutral layer coating, forming a pattern in the photoresist coating, thereby forming regions in which the neutral layer coating is uncovered by the resist, iiil) treating the uncovered neutral layer coating to remove it, forming a pinning area, ivl) removing the photoresist, uncovering the unaffected neutral layer coating forming a chemoepitaxy pattern containing neutral and pinning areas, vl) applying a block copolymer comprising an etch resistant block and a highly etch
• the pattern in the photoresist coating is formed by imaging lithography selected from a group consisting of e-beam, broadband, 193 nm immersion lithography, 13.5 nm EUV lithography, 193nm deep UV lithography, 248 nm deep UV lithography, 365 nm UV lithography and 436 nm UV lithography.
• Another aspect of this invention is the use of the polymer of structure (A) as described herein in any one of its embodiments, or of the composition as described herein, in a process for preparing a grafted coating or a self-assembled coating on a substrate.
• Etching experiments were done using standard isotropic oxygen etching conditions for selfassembled films block copolymer of methyl methacrylate and styrene.
• sec-butylDPE-Li is defined as adduct of sec-butyl lithium and 1,1’- diphenylethylene (DPE) prepared by adding an equimolar amount of sec-butyl lithium to a 2 wt. % solution of DPE in toluene.
• P(S-b-MMA) (26K-b-30K) was synthesized using the same procedure as described in example 2. To achieve target M n and compositions of PS and PMMA block, the amount of initiator and monomer quantities were changed. 20 g (0. 192 moles) of styrene was polymerized by rapidly adding 0.55 mL (1.4M solution) of sec-butyllithium. Then 0. 164 g (0.0007 moles) of 1,1 ’-diphenylethylene (DPE) in 2.5 ml of dry toluene was added via ampule into the reactor.
• DPE 1,1 ’-diphenylethylene
• reaction mixture turned into dark brick-red indicating conversion of styryllithium active centers to delocalized DPE adduct carbanion.
• a small amount (2 mL) of the reaction mixture was withdrawn for PS block molecular weight analysis.
• methyl methacrylate 22.85 g, 0.23 moles was added via ampule.
• the reaction was terminated after 30 min with 1 mL of degassed methanol.
• the block copolymer was recovered by precipitation in excess isopropanol (5 times of the polymer solution) containing 10 % water, filtered, and dried at 55°C for 12 h under vacuum giving 40 g of P(S-b-MMA) (94 % yield) consisting of 46.9 mol. % of polystyrene block and 53.1 mol. % of polymethylmethacrylate block.
• Tefrahydropyran (THP) protected 3-(hydroxy methyl)- 1,1 -diphenyl ethylene (MTAG-8, 0.72 g, 2.45 mmol) was weighed (1.2 molar excess with respect to s-BuLi) in a vial and dissolved in 3 mL toluene. This solution was promptly titrated with dilute secbutylDPE-Li solution until an orange color was persistence. Solution color got weaker and then changed to green by the time it was added to the reactor. After closing the stopcock ampule was removed from glovebox.
• Both BnMA/BPMMA ampule and MTAG-8 ampule were attached to the flaks using glass joints and yellow grease Required amount of LiCl (5 times excess with respect to s- BuLi) weighed and quickly added to the flask and closed with three-way septum adaptor, which was connected with a rubber tubing for access to vacuum/argon. Vacuum was applied to the flask and LiCl was dried using heat-gun. After 10 min flask was brought to RT and filled with argon. Under positive pressure —150 mL dry THF was transferred to the flask via cannula transfer. The flask temperature was lowered to - 78°C using dry ice/acetone bath.
• Table 1 shows a summary of the reaction conditions and characterization for copolymers containing BPMMA Exampled 1, la and lb (Scheme 1).
• Examples la and lb used the same procedure as Example but varied the loading of loading BPMMA Example la (2X times), Examples lb (2.5X). This was reflected in the amount of BPMMA incorporated into the polymer as a repeat unit in Table 1 as measured by proton NMR in CD 2 C12.
• Example 2 Synthesis of hydroxy methyl terminated-poly(benzyl methacrylate-co-cyclohexyl methacrylate) Cyclohexyl methacrylate (CHMA, 5 ml, 28.7 mmol) and benzyl methacrylate (BnMA, 14.6 ml, 86. 1 mmol) was added via syringe into the ampule. The mixture was degassed under reduced pressure (IO -6 mmHg) until toluene (8.0 ml) was removed from monomer mixture.
• CHMA hydroxy methyl terminated-poly(benzyl methacrylate-co-cyclohexyl methacrylate
• Tetrahydropyran (THP) protected 3-(hydroxy methyl) -1,1 -diphenyl ethylene (MTAG-8, 0.71 g, 2.4 mmol) was weighed (1.2 molar excess with respect to s-BuLi) in a vial and dissolved in 3 mL toluene. This solution was promptly titrated with dilute secbutylDPE-Li solution until an orange color was persistence. Solution color got weaker and then changed to green by the time it was added to the reactor. After closing the stopcock ampule was removed from glovebox.
• Both BnMA/BPMMA ampule and MTAG-8 ampule were attached to the flaks using glass joints and yellow grease Required amount of LiCl (5 times excess with respect to s-BuLi) weighed and quickly added to the flask and closed with three-way septum adaptor, which was connected with a rubber tubing for access to vacuum/argon. Vacuum was applied to the flask and LiCl was dried using heat-gun. After 10 min flask was brought to RT and filled with argon. Under positive pressure ⁇ 150 mL dry THF was transferred to the flask via cannula transfer. The flask temperature was lowered to -78°C using dry ice/acetone bath.
• Tetrahydropyran (THP) protected 3-(hydroxy methyl)- 1,1 -diphenyl ethylene (MTAG-8, 0.77 g, 2.42 mmol) was weighed (1.2 molar excess with respect to s-BuLi) in a vial and dissolved in ⁇ 3-5 mL toluene. This solution was promptly titrated with dilute secbutylDPE-Li solution until an orange color was persistence. Solution color got weaker and then changed to green by the time it was added to the reactor. After closing the stopcock ampule was removed from glovebox. Both BnMA/AMMA ampule and MTAG-8 ampule were attached to the flaks using glass joints and yellow grease.
• the wafers were rinsed with PGMEA for 2 min to remove any un-grafted polymer from the wafer which were then spun dried by spinning “1,500 rpm,” followed by baking at 110°C for 1 min. Then water contact angle, was measured to understand the grafting efficiency and the results were shown in Table 1.
• the second brush of hydroxyl terminated PS-OH or PMMA-OH containing polymer formulation was made in PGMEA at 1 wt. solid.
• the solution was spin coated on to previously brushed metal and SiO2 substrates. After baking at various temp. and time, the double brushed substrates were rinsed to remove unreacted second brushes.
• FIG.3 shows a 1FOV SEM images of each fingerprint pattern on a silicon wafer using A) PS-b- PMMA on P(BnMA-r-BPMA25%)-OH (Mn: 13K, brush FT: 4.2 nm ⁇ 0.3, WCA: 81.0 ⁇ 2.3) B) PS-b-PMMA on P(BnMA-r-CHMA 25% )-OH(Mn: 23K, brush FT: 3.8 nm ⁇ 0.3, WCA: 79.4 ⁇ 0.5) C) PS-b-PMMA on P(BnMA-r-AMMA20%-OH) (Mn: ⁇ 7.0K, brush FT: 7.9 nm ⁇ 0.3, WCA: 80.8 ⁇ 0.5).

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