WO2023078057A1 - 一种hbt高效率射频功率放大器 - Google Patents

一种hbt高效率射频功率放大器 Download PDF

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Publication number
WO2023078057A1
WO2023078057A1 PCT/CN2022/125272 CN2022125272W WO2023078057A1 WO 2023078057 A1 WO2023078057 A1 WO 2023078057A1 CN 2022125272 W CN2022125272 W CN 2022125272W WO 2023078057 A1 WO2023078057 A1 WO 2023078057A1
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Prior art keywords
balun
capacitor
helical
push
power tube
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PCT/CN2022/125272
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English (en)
French (fr)
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彭艳军
宣凯
郭嘉帅
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深圳飞骧科技股份有限公司
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Publication of WO2023078057A1 publication Critical patent/WO2023078057A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only

Definitions

  • the utility model relates to the technical field of wireless communication radio frequency chip design, in particular to an HBT high-efficiency radio frequency power amplifier.
  • the radio frequency power amplifier is located at the final stage of the wireless communication transmitter and is the most important radio frequency device in the wireless communication system.
  • the role of the RF power amplifier is to drive the antenna to increase the radiation power factor of the antenna and propagate the wireless communication signal over a certain distance.
  • the performance of the RF power amplifier has a great influence on the performance of the entire mobile wireless communication device, not only determines the quality and propagation distance of the communication signal, but also because the energy consumed by the RF power amplifier accounts for a considerable proportion of the energy consumed by the entire wireless communication device, especially For battery-powered mobile wireless communication systems, it directly affects the talk time of the mobile terminal. Therefore, it is particularly important to design high-efficiency RF power amplifiers.
  • the output signal of the RF power tube contains relatively large output harmonic components, especially the second-order and third-order harmonic components have the largest amplitudes. Harmonic components in the output signal can interfere with signals of other channels.
  • the designed RF power amplifier must be able to effectively suppress the harmonic components in the output signal.
  • a heterojunction bipolar transistor (Heterojunction bipolar transistor, HBT) common-emitter amplifier circuit with a single-ended structure is a common method for designing radio frequency power amplifiers in the related art.
  • This circuit has the advantages of simple structure, easy design, and convenient debugging. But from the collector end of the output power tube to the load end, the inductance of the bonding wire and the parasitic parameters of the interconnection wire will become part of the second harmonic trap circuit. For a specific operating frequency, the second harmonic trap circuit must be short-circuited Only valid for specific loads. When the load impedance changes, the second harmonic trap circuit will no longer be short-circuited at the second harmonic frequency, and will show a certain impedance value, which will affect the improvement of efficiency.
  • the second harmonic trap circuit has a great influence on the fundamental impedance, and the second harmonic impedance cannot be adjusted independently. Often, the second harmonic impedance is adjusted to the minimum impedance value, and the fundamental impedance also deviates from the optimal value. , leading to a decrease in fundamental wave output power and poor linearity.
  • the utility model proposes an HBT high-efficiency radio frequency power amplifier with high output efficiency and good harmonic suppression effect.
  • the embodiment of the utility model provides a HBT high-efficiency radio frequency power amplifier, including:
  • the base of the driving power tube is connected to the input terminal, and the emitter of the driving power tube is connected to ground;
  • the first helical balun is a center tap structure, and is used to convert the single-ended signal driving the power tube into a differential signal; the first end of the primary coil of the first helical balun Connected to a power supply voltage, the second end of the primary coil of the first helical balun is connected to the collector of the driving power tube;
  • An output power tube unit includes at least two push-pull power tubes connected in parallel to form a push-pull form for outputting the differential signal, including a first push-pull power tube and a second push-pull power tube
  • the base of the first push-pull power tube is connected to the first end of the secondary coil of the first helical balun, and the emitter of the first push-pull power tube is connected to ground
  • the second The base of the push-pull power tube is connected to the second end of the secondary coil of the first helical balun, and the emitter of the second push-pull power tube is connected to ground;
  • the second helical balun is a center tap structure, and is used to convert the differential signal of the output power tube unit into a single-ended signal;
  • the primary coil of the second helical balun The first end is connected to the collector of the first push-pull power tube, and the second end of the primary coil of the second helical balun is connected to the collector of the second push-pull power tube;
  • the second The first end of the secondary coil of the helical balun is used as an output, and the second end of the secondary coil of the second helical balun is connected to ground;
  • the driving power tube, the first push-pull power tube and the second push-pull power tube are all HBT tubes with a single-ended common-emitter amplification structure.
  • the HBT high-efficiency radio frequency power amplifier also includes a second capacitor, the first end of the second capacitor is connected to the center tap end of the secondary coil of the first helical balun, and the second capacitor The second end of the second capacitor is connected to ground; the second capacitor resonates in series with the primary coil of the first helical balun at the second harmonic frequency.
  • the HBT high-efficiency RF power amplifier also includes a first capacitor and a third capacitor, the first capacitor is connected in parallel with the primary coil of the first helical balun, and the third capacitor is connected with the first
  • the secondary coil of the helical balun is connected in parallel; the first capacitor and the primary coil of the first helical balun resonate at the fundamental frequency, and the third capacitor and the secondary coil of the first helical balun The stage coil resonates at the fundamental frequency.
  • the second helical balun is designed on the substrate.
  • the HBT high-efficiency RF power amplifier further includes a fifth capacitor, the first end of the fifth capacitor is respectively connected to the center tap end of the primary coil of the second helical balun and the power supply voltage, The second end of the fifth capacitor is connected to ground; the fifth capacitor resonates in series with the primary coil of the second helical balun at a second harmonic frequency.
  • the HBT high-efficiency RF power amplifier also includes a fourth capacitor and a sixth capacitor, the fourth capacitor is connected in parallel with the primary coil of the second helical balun, and the sixth capacitor is connected to the second The secondary coil of the helical balun is connected in parallel; the fourth capacitor and the primary coil of the second helical balun resonate at the fundamental frequency, and the sixth capacitor and the secondary coil of the second helical balun The stage coil resonates at the fundamental frequency.
  • the parallel resonant circuit includes a resonant inductor and a resonant capacitor connected in parallel with each other, and the parallel resonant circuit resonates at the third harmonic frequency.
  • the HBT high-efficiency radio frequency power amplifier also includes a first ballast resistor, a first ballast capacitor, a second ballast resistor and a second ballast capacitor; the first end of the first ballast resistor is connected to For the bias voltage, the second end of the first ballast resistor is connected to the base of the first push-pull power transistor; the first end of the first ballast capacitor is connected to the first helix The first end of the secondary coil of the balun, the second end of the first ballast capacitor is connected to the base of the first push-pull power transistor; the first end of the second ballast resistor is connected to the The bias voltage, the second end of the second ballast resistor is connected to the base of the second push-pull power transistor; the first end of the second ballast capacitor is connected to the first helix bar The second terminal of the secondary coil of the Lun, the second terminal of the second ballast capacitor is connected to the base of the second push-pull power transistor.
  • the first ballast capacitor, the second ballast capacitor, the third capacitor, and the secondary coil of the first helical balun all resonate at the fundamental frequency.
  • the HBT high-efficiency radio frequency power amplifier of the present invention includes a drive power tube, a first spiral balun, which is used to convert the single-ended signal of the drive power tube into a differential signal;
  • the output power tube unit includes At least two push-pull power tubes connected in parallel to form a push-pull form are used to output the differential signal;
  • the second helical balun is used to convert the differential signal of the output power tube unit into a single-ended signal; parallel connection A resonant circuit, the input of the parallel resonant circuit is connected to the first end of the secondary coil of the second helical balun.
  • the driving power tube still adopts a single-ended common-emitter amplification structure, and the output power tube unit adopts a push-pull power tube.
  • the center-tapped first helix balun is used between the driving power tube and the output power tube unit to complete the conversion from single-ended to differential, and it is easy to adjust the resonant frequency through capacitance, ensuring that the second harmonic impedance is maintained under the condition of load impedance changes constant, which enhances the transmission capability of the fundamental wave signal and reduces the ground impedance of the second harmonic;
  • the output of the output power tube unit also uses the center-tapped second helix balun to complete the conversion from differential to single-ended, and the converted single-ended
  • the signal passes through the parallel resonant circuit and then outputs the power signal.
  • the impedance is open, which realizes the optimal power transfer of the fundamental wave signal and has higher efficiency.
  • Fig. 1 is the circuit structure diagram of the HBT radio frequency power amplifier of related art
  • Fig. 2 is the simplified equivalent circuit diagram of the common emitter HBT tube of the HBT radio frequency power amplifier that the utility model embodiment provides;
  • Fig. 3 is a circuit structure diagram of the implementation mode of the HBT high-efficiency radio frequency power amplifier provided by the embodiment of the present invention.
  • Fig. 4 is the circuit structural diagram of another kind of push-pull power tube unit of the HBT high-efficiency radio frequency power amplifier that the utility model embodiment provides;
  • Fig. 5 is the circuit structure diagram of the implementation mode 2 of the HBT high-efficiency radio frequency power amplifier provided by the embodiment of the present invention.
  • Fig. 6 is a circuit structure diagram of the third embodiment of the HBT high-efficiency radio frequency power amplifier provided by the embodiment of the present invention.
  • the high-efficiency HBT RF power amplifier requires that the power tube used has a low turn-on voltage and a high breakdown voltage, and has high efficiency and linearity when working in a state close to saturation.
  • the Heterojunction bipolar transistor (HBT) device has the characteristics of high efficiency, large gain, good linearity, high power density, low leakage current and only a single power supply, it makes HBT very suitable for RF power amplifiers. design. In engineering applications, GaAs HBT and SiGe HBT are the two most widely used power devices, and they have obvious advantages in manufacturing cost.
  • the HBT common-emitter amplifier circuit with single-ended structure is a common way to design HBT RF power amplifiers.
  • This circuit has the advantages of simple structure, easy design, and convenient debugging.
  • the common method is to connect the second-order harmonic trap circuit (Cs1, Ls1, Cs2, Ls2) in parallel at the input and output ends of the RF power tube, and adjust the collector terminal and base terminal of the output power tube
  • the second harmonic impedance is used to shape the output voltage and current waveforms, so that the overlap between the output voltage wave and the output current wave is reduced as much as possible, thereby improving efficiency.
  • the inductance Lparasitic of the bonding wire and the parasitic parameters of the interconnection wire will become part of the second harmonic trap circuit.
  • the second harmonic trap circuit needs to Implementing a short circuit is only effective for a specific load.
  • the second harmonic trap circuit will no longer be short-circuited at the second harmonic frequency, and will show a certain impedance value, which will affect the improvement of efficiency.
  • the second harmonic trap circuit has a great influence on the fundamental impedance, and the second harmonic impedance cannot be adjusted independently.
  • the second harmonic impedance is adjusted to the minimum impedance value, and the fundamental impedance also deviates from the optimal value. , leading to a decrease in fundamental wave output power and poor linearity.
  • the design of the HBT RF power amplifier is to complete the impedance matching at the fundamental frequency first, but in order to obtain the best performance of the power tube, it is very important to optimize the impedance matching of the harmonics.
  • the adjustment of harmonic components has a great influence on the working state of the power amplifier. Without harmonic adjustment, the designed HBT RF power amplifier often cannot get the expected performance, especially the working efficiency will have large fluctuations. Harmonic adjustment data is critical to designing an HBT RF power amplifier with expected performance.
  • the common-emitter circuit structure is often used.
  • the simplified equivalent circuit model is shown in Figure 2.
  • the nonlinearity of the HBT output power is caused by the nonlinear impedance of the base and emitter. of.
  • the utility model provides a kind of HBT high-efficiency radio frequency power amplifier, and its design circuit principle is shown in Figure 3, and the driving power tube (Q0) of the utility model embodiment still adopts single-ended common emitter amplifying structure,
  • the output power tube unit (Q1, Q2) adopts a push-pull power tube in a push-pull form.
  • the drive power tube (Q0) and the output power tube unit (Q1, Q2) use a center-tapped helical balun to complete the conversion from single-ended to differential, and the output end of the output power tube also uses a center-tapped helical balun to complete the differential
  • the converted single-ended signal passes through the LC parallel resonant circuit and then outputs a power signal to drive the load antenna.
  • the HBT high-efficiency radio frequency power amplifier 100 includes: an input terminal RFin, a driving power transistor Q0, a first helical balun Balun1, an output power tube unit 1, a second helical balun Balun2, a parallel resonant circuit, Output RFout.
  • the base of the driving power transistor Q0 is connected to the input terminal RFin, and the emitter of the driving power transistor Q0 is connected to ground. More preferably, an input matching circuit, such as an input matching circuit Cb0 , is connected in series between the base of the driving power transistor Q0 and the input terminal RFin to realize input impedance matching.
  • an input matching circuit such as an input matching circuit Cb0
  • the first helical balun Balun1 is a center-tap structure for converting the single-ended signal driving the power transistor Q0 into a differential signal.
  • the first end of the primary coil Lp1 of the first helical Balun Balun1 is connected to the power supply voltage Vcc, and the second end of the primary coil Lp1 of the first helical Balun Balun1 is connected to the collector of the drive power transistor Q0 electrode.
  • the output power tube unit 1 includes at least two push-pull power tubes connected in parallel to form a push-pull form, for outputting the differential signal.
  • the output power tube unit 1 includes a first push-pull power tube Q1 and a second push-pull power tube Q2 that are connected in parallel to form a push-pull form.
  • it can also be formed by connecting more push-pull power tubes in parallel.
  • the base of the first push-pull power transistor Q1 is connected to the first end of the secondary coil Ls1 of the first helical balun Balun1, and the emitter of the first push-pull power transistor Q1 is connected to ground.
  • the base of the second push-pull power transistor Q2 is connected to the second end of the secondary coil Ls1 of the first helical balun Balun1, and the emitter of the second push-pull power transistor Q2 is connected to ground.
  • the second helical balun Balun2 is a center-tap structure for converting the differential signal of the output power tube unit into a single-ended signal.
  • the first end of the primary coil Lp2 of the second helix Balun Balun2 is connected to the collector of the first push-pull power transistor Q1, and the second end of the primary coil Lp2 of the second helix Balun Balun2 is connected to To the collector of the second push-pull power transistor Q2; the first end of the secondary coil Ls2 of the second helical Balun Balun2 is used as an output, and the secondary coil Ls2 of the second helical Balun Balun2 The second end is connected to ground.
  • the input of the parallel resonant circuit is connected to the first end of the secondary coil Ls2 of the second helical balun Balun2; the output terminal RFout is connected to the output of the parallel resonant circuit.
  • the driving power transistor Q0, the first push-pull power transistor Q1 and the second push-pull power transistor Q2 are all HBT transistors with a single-ended common-emitter amplification structure.
  • the push-pull output power tube unit 1 generates in-phase even-order harmonics (common-mode signal) and anti-phase odd-order harmonics (differential-mode signal), and the input and output ends of the output power tube unit 1 adopt a center-tapped spiral Line balun.
  • the fundamental wave and the second harmonic are in an orthogonal relationship and are independent of each other. Ideally, after the fundamental impedance is adjusted to an optimal value, adjusting the second harmonic impedance will not affect the fundamental impedance.
  • the HBT high-efficiency radio frequency power amplifier 100 also includes a second capacitor C2, the first end of the second capacitor C2 is connected to the center tap end of the secondary coil Ls1 of the first helix Balun Balun1 , the second end of the second capacitor C2 is connected to ground; the second capacitor C2 resonates in series with the primary coil Lp1 of the first helical Balun Balun1 at the second harmonic frequency.
  • the output power tube unit 1 in push-pull form generates the same-phase even-order harmonics (common-mode signal) and anti-phase odd-order harmonics (differential-mode signal), and the input and output ends of the output power tube unit 1 adopt a center-tapped spiral Line balun.
  • the fundamental wave and the second harmonic are in an orthogonal relationship and are independent of each other. Ideally, after the fundamental impedance is adjusted to an optimal value, adjusting the second harmonic impedance will not affect the fundamental impedance.
  • This embodiment adopts the on-chip first helical balun Balun1 in the form of a center tap.
  • This form of balun has the characteristics of occupying a small chip area and is easy to adjust the resonant frequency through a capacitor.
  • the primary coil Lp1 and the secondary coil Ls1 of the first helical balun Balun1 implement signal transmission through magnetic field coupling.
  • a common mode signal cannot be coupled from the primary coil Lp1 to the secondary coil Ls1, while a differential mode signal can be coupled from the primary coil Lp1 to the secondary coil Ls1.
  • the inductance value of the coil is also a finite value
  • the conductivity of the helix is a finite value
  • the coils are coupled to each other through the substrate. This results in a common-mode signal at the center tap.
  • the method to eliminate the second harmonic common mode signal is to connect the capacitor C2 in series with the center tap end of the secondary coil Ls1 to form a series resonance with the common mode inductor and reduce the impedance of the second harmonic to ground.
  • the HBT high-efficiency radio frequency power amplifier 100 further includes a first capacitor C1 and a third capacitor C3.
  • the first capacitor C1 is connected in parallel with the primary coil Lp1 of the first helical balun Balun
  • the third capacitor C2 is connected in parallel with the secondary coil Ls1 of the first helical balun Balun1.
  • the first capacitor C1 resonates with the primary coil Lp1 of the first helical Balun Balun1 at the fundamental frequency
  • the third capacitor C3 resonates with the secondary coil Ls1 of the first helical Balun Balun1 at at the fundamental frequency.
  • the coupling from the primary coil Lp1 to the secondary coil Ls1 of the first helical balun Balun1 is also non-ideal, which will increase the transmission loss of the differential mode signal.
  • the coupling from the primary coil Lp1 to the secondary coil Ls1 of the first helical balun Balun1 is also non-ideal, which will increase the transmission loss of the differential mode signal.
  • the first capacitor C1 and the third capacitor C3 are respectively connected in parallel between the primary coil Lp1 and the secondary coil Ls1 of the first spiral Balun1.
  • the first capacitor C1 and the primary coil Lp1, and the third capacitor C3 and the secondary coil of Ls1 are all connected in parallel to resonate at the fundamental frequency, which enhances the transmission capability of the fundamental signal.
  • the second helical Balun Balun2 is designed on the substrate. This is because the metal traces on the substrate have a higher thickness, which can obtain an inductance with a higher Q value and reduce the signal transmission insertion loss.
  • the HBT high-efficiency RF power amplifier 100 also includes a fourth capacitor C4 and a sixth capacitor C6, the fourth capacitor C4 is connected in parallel with the primary coil Lp2 of the second spiral Balun Balun2, and the sixth capacitor C6 is connected with The secondary coil Ls2 of the second helical balun Balun2 is connected in parallel.
  • the fourth capacitor C4 resonates with the primary coil Lp2 of the second helical Balun Balun2 at the fundamental frequency
  • the sixth capacitor C6 resonates with the secondary coil Ls2 of the second helical Balun Balun2 at at the fundamental frequency to achieve optimal power transfer of the fundamental signal.
  • the HBT high-efficiency radio frequency power amplifier 100 also includes a fifth capacitor C5, the first end of the fifth capacitor C5 is respectively connected to the center tap end of the primary coil Lp2 of the second helix Balun Balun2 and the power supply voltage Vcc, the second terminal of the fifth capacitor C5 is connected to ground.
  • the fifth capacitor C5 resonates in series with the primary coil Lp2 of the second helical balun Balun2 at the second harmonic frequency. Therefore, the collector terminals of the first push-pull power transistor Q1 and the second push-pull power transistor Q2 see lower second harmonic impedance.
  • the parallel resonant circuit includes a resonant inductor Ltk and a resonant capacitor Ctk connected in parallel with each other, and the parallel resonant circuit resonates at the third harmonic frequency.
  • the secondary coil Ls2 of the second spiral balun Balun2 is connected to a parallel resonant circuit (Tank circuit) composed of a resonant capacitor Ctk and a resonant inductance Ltk to drive the antenna load.
  • the resonant frequency of the Tank circuit is the third harmonic.
  • the impedance is an open circuit. The shaped voltage and current waveforms are closer to Class F power amplifiers, and the efficiency is higher.
  • the first push-pull power transistor Q1 and the second push-pull power transistor Q2 are usually composed of multiple HBT transistors connected in parallel. Since the HBT tube has the characteristic that the current will increase with the increase of the temperature, when multiple HBT tubes are connected in parallel, in order to prevent a certain transistor from thermal collapse, in this embodiment, each HBT tube base A ballast resistor (Ballast Resistor) is connected to the polar bias circuit, and a capacitor is connected in series with the base RF signal path to achieve DC signal isolation.
  • the output power unit composed of multiple HBT tubes connected in parallel including ballast resistors is shown in Figure 4.
  • the HBT high-efficiency radio frequency power amplifier 100 further includes a first ballast resistor Rb1, a first ballast capacitor Cb1, a second ballast resistor Rb2, and a second ballast capacitor Cb2.
  • a first end of the first ballast resistor Rb1 is connected to the bias voltage Vbias, and a second end of the first ballast resistor Rb1 is connected to the base of the first push-pull power transistor Q1.
  • the first end of the first ballast capacitor Cb1 is connected to the first end of the secondary coil Ls1 of the first spiral Balun Balun1, and the second end of the first ballast capacitor Cb1 is connected to the second A base of a push-pull power transistor Q1.
  • the first end of the second ballast resistor Rb2 is connected to the bias voltage Vbias, and the second end of the second ballast resistor Rb2 is connected to the base of the second push-pull power transistor Q2;
  • the first end of the second ballast capacitor Cb2 is connected to the second end of the secondary coil Ls1 of the first spiral Balun Balun1, and the second end of the second ballast capacitor Cb2 is connected to the second pusher Pull the base of the power transistor Q2.
  • the first ballast capacitor Cb1, the second ballast capacitor Cb2, the third capacitor C3, and the secondary coil Ls1 of the first helical Balun Balun1 all resonate at the fundamental frequency to achieve good transmission of the fundamental signal.
  • the third capacitor C3 can also be omitted by rationally designing the first helical Balun Balun1, then the described embodiment is as shown in FIG.
  • the example is basically the same, except that the third capacitor C3 is omitted after rationally designing the first helical balun Balun1.
  • the HBT high-efficiency radio frequency power amplifier of the present invention includes a drive power tube, a first spiral balun, which is used to convert the single-ended signal of the drive power tube into a differential signal;
  • the output power tube unit includes At least two push-pull power tubes connected in parallel to form a push-pull form are used to output the differential signal;
  • the second helical balun is used to convert the differential signal of the output power tube unit into a single-ended signal; parallel connection A resonant circuit, the input of the parallel resonant circuit is connected to the first end of the secondary coil of the second helical balun.
  • the driving power tube still adopts a single-ended common-emitter amplification structure, and the output power tube unit adopts a push-pull power tube.
  • the center-tapped first helix balun is used between the driving power tube and the output power tube unit to complete the conversion from single-ended to differential, and it is easy to adjust the resonant frequency through capacitance, ensuring that the second harmonic impedance is maintained under the condition of load impedance changes constant, which enhances the transmission capability of the fundamental wave signal and reduces the ground impedance of the second harmonic;
  • the output of the output power tube unit also uses the center-tapped second helix balun to complete the conversion from differential to single-ended, and the converted single-ended
  • the signal passes through the parallel resonant circuit and then outputs the power signal.
  • the impedance is open, which realizes the optimal power transfer of the fundamental wave signal and has higher efficiency.

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Abstract

本实用新型提供了一种HBT高效率射频功率放大器，包括输入端，驱动功率管，第一螺旋线巴伦，用于将驱动功率管的单端信号转化为差分信号；输出功率管单元，包括至少两个相互并联形成推挽形式的推挽功率管，用于将所述差分信号输出，第二螺旋线巴伦，所述第二螺旋线巴伦为中心抽头结构，用于将所述输出功率管单元的差分信号转换为单端信号；并联谐振电路，所述并联谐振电路的输入连接至所述第二螺旋线巴伦的次级线圈的第一端；输出端，所述输出端连接至所述并联谐振电路的输出。与现有技术相比，本实用新型的HBT高效率射频功率放大器输出效率高，谐波抑制效果好。

Description

一种HBT高效率射频功率放大器 技术领域
本实用新型涉及无线通信射频芯片设计技术领域，尤其涉及HBT高效率射频功率放大器。
背景技术
射频功率放大器位于无线通信发射机的末级，是无线通信系统中最重要的射频器件。射频功率放大器的作用是驱动天线，以提高天线的辐射功率因子，将无线通信信号传播一定的距离。射频功率放大器的性能对整个移动无线通信设备的性能影响很大，不仅决定了通信信号的质量和传播距离，而且因为射频功率放大器消耗的能量占据了整个无线通信设备消耗能量相当大比例，尤其是对于电池供电的移动无线通信系统，直接影响了移动端的通话时间。因此，设计高效率的射频功率放大器尤为重要。
另一方面，射频功率放大器工作在大信号模式下，射频功率管输出信号中含有较大的输出谐波分量，尤其是二阶三阶谐波分量的幅值最大。输出信号中的谐波分量会干扰其它信道的信号。设计的射频功率放大器必须能够有效抑制输出信号中的谐波分量。
单端结构的异质结双极晶体管(Heterojunction bipolar transistor，HBT)共发射极放大电路是相关技术中设计射频功率放大器常见方式。这种电路具有结构简单，易于设计，调试方便等优点。但从输出功率管集电极端向负载端看，键合线电感和互联线寄生参数都会成为二次谐波陷波电路的一部分，对于特定的工作频率，二次谐波陷波电路要实现短路只对特定的负载有效。当负载阻抗变化时，二次谐波陷波电路在二次谐波频率上不再短路，会呈现出一定的阻抗值，影响效率的提升。另一方面，二次谐波陷波电路对基波阻抗影响大，不能独立调 节二次谐波阻抗，往往时二次谐波阻抗调节到了最小阻抗值，基波阻抗也偏离了最优值处，导致基波输出功率减小，线性度变差。
因此，有必要提供一种新的HBT高效率射频功率放大器以解决上述技术问题。
实用新型内容
针对以上相关技术的不足，本实用新型提出一种输出效率高，谐波抑制效果好的HBT高效率射频功率放大器。
为了解决上述技术问题，本实用新型实施例提供了一种HBT高效率射频功率放大器，包括：
输入端；
驱动功率管，所述驱动功率管的基极连接至所述输入端，所述驱动功率管的发射极连接至接地；
第一螺旋线巴伦，所述第一螺旋线巴伦为中心抽头结构，用于将驱动功率管的单端信号转化为差分信号；所述第一螺旋线巴伦的初级线圈的第一端连接至电源电压，所述第一螺旋线巴伦的初级线圈的第二端连接至所述驱动功率管的集电极；
输出功率管单元，所述输出功率管单元包括至少两个相互并联形成推挽形式的推挽功率管，用于将所述差分信号输出，包括第一推挽功率管和第二推挽功率管；所述第一推挽功率管的基极连接至所述第一螺旋线巴伦的次级线圈的第一端，所述第一推挽功率管的发射极连接至接地；所述第二推挽功率管的基极连接至所述第一螺旋线巴伦的次级线圈的第二端，所述第二推挽功率管的发射极连接至接地；
第二螺旋线巴伦，所述第二螺旋线巴伦为中心抽头结构，用于将所述输出功率管单元的差分信号转换为单端信号；所述第二螺旋线巴伦的初级线圈的第一端连接至所述第一推挽功率管的集电极，所述第二螺旋线巴伦的初级线圈的第二端连接至所述第二推挽功率管的集电极；所述第二螺旋线巴伦的次级线圈的第一端作为输出，所述第二螺 旋线巴伦的次级线圈的第二端连接至接地；
并联谐振电路，所述并联谐振电路的输入连接至所述第二螺旋线巴伦的次级线圈的第一端；
输出端，所述输出端连接至所述并联谐振电路的输出。
优选的，所述驱动功率管、所述第一推挽功率管和所述第二推挽功率管均为单端共发射极放大结构的HBT管。
优选的，所述HBT高效率射频功率放大器还包括第二电容，所述第二电容的第一端连接至所述第一螺旋线巴伦的次级线圈的中心抽头端，所述第二电容的第二端连接至接地；所述第二电容与所述第一螺旋线巴伦的初级线圈串联谐振在二次谐波频率上。
优选的，所述HBT高效率射频功率放大器还包括第一电容和第三电容，所述第一电容与所述第一螺旋线巴伦的初级线圈并联，所述第三电容与所述第一螺旋线巴伦的次级线圈并联；所述第一电容与所述第一螺旋线巴伦的初级线圈谐振在基波频率上，所述第三电容与所述第一螺旋线巴伦的次级线圈谐振在基波频率上。
优选的，所述第二螺旋线巴伦设计在基板上。
优选的，所述HBT高效率射频功率放大器还包括第五电容，所述第五电容的第一端分别连接至所述第二螺旋线巴伦的初级线圈的中心抽头端和所述电源电压，所述第五电容的第二端连接至接地；所述第五电容与所述第二螺旋线巴伦的初级线圈串联谐振在二次谐波频率上。
优选的，所述HBT高效率射频功率放大器还包括第四电容和第六电容，所述第四电容与所述第二螺旋线巴伦的初级线圈并联，所述第六电容与所述第二螺旋线巴伦的次级线圈并联；所述第四电容与所述第二螺旋线巴伦的初级线圈谐振在基波频率上，所述第六电容与所述第二螺旋线巴伦的次级线圈谐振在基波频率上。
优选的，所述并联谐振电路包括相互并联的谐振电感和谐振电容，所述并联谐振电路谐振在三次谐波频率上。
优选的，所述HBT高效率射频功率放大器还包括第一镇流电阻、第一镇流电容、第二镇流电阻和第二镇流电容；所述第一镇流电阻的第一端连接至所述偏置电压，所述第一镇流电阻的第二端连接至所述第一推挽功率管的基极；所述第一镇流电容的第一端连接至所述第一螺旋线巴伦的次级线圈的第一端，所述第一镇流电容的第二端连接至所述第一推挽功率管的基极；所述第二镇流电阻的第一端连接至所述偏置电压，所述第二镇流电阻的第二端连接至所述第二推挽功率管的基极；所述第二镇流电容的第一端连接至所述第一螺旋线巴伦的次级线圈的第二端，所述第二镇流电容的第二端连接至所述第二推挽功率管的基极。
优选的，所述第一镇流电容、所述第二镇流电容、所述第三电容、所述第一螺旋线巴伦的次级线圈均谐振在基波频率上。
与现有技术相比，本实用新型的HBT高效率射频功率放大器包括驱动功率管，第一螺旋线巴伦，用于将驱动功率管的单端信号转化为差分信号；输出功率管单元，包括至少两个相互并联形成推挽形式的推挽功率管，用于将所述差分信号输出；第二螺旋线巴伦，用于将所述输出功率管单元的差分信号转换为单端信号；并联谐振电路，所述并联谐振电路的输入连接至所述第二螺旋线巴伦的次级线圈的第一端。由此，驱动功率管仍采用单端共发射极放大结构，输出功率管单元采用了推挽形式的功率管。驱动功率管和输出功率管单元之间采用中心抽头的第一螺旋线巴伦完成单端到差分的转换，易于通过电容调节谐振频率，确保了二次谐波阻抗在负载阻抗变化的条件下保持恒定，增强了基波信号的传递能力，降低了二次谐波对地阻抗；输出功率管单元输出端同样采用中心抽头的第二螺旋线巴伦完成差分到单端的转换，转换后的单端信号经过并联谐振电路再输出功率信号，三次谐波而言，阻抗是开路的，实现基波信号的最优功率传递，效率更高。
附图说明
下面结合附图详细说明本实用新型。通过结合以下附图所作的详细描述，本实用新型的上述或其他方面的内容将变得更清楚和更容易理解。附图中：
图1为相关技术的HBT射频功率放大器的电路结构图；
图2为本实用新型实施例提供的HBT射频功率放大器的共发射极HBT管简化等效电路图；
图3为本实用新型实施例提供的HBT高效率射频功率放大器实施方式一电路结构图；
图4为本实用新型实施例提供的HBT高效率射频功率放大器的另一种推挽功率管单元的电路结构图；
图5为本实用新型实施例提供的HBT高效率射频功率放大器的实施方式二电路结构图；
图6为本实用新型实施例提供的HBT高效率射频功率放大器的实施方式三电路结构图。
具体实施方式
下面结合附图详细说明本实用新型的具体实施方式。
在此记载的具体实施方式/实施例为本实用新型的特定的具体实施方式，用于说明本实用新型的构思，均是解释性和示例性的，不应解释为对本实用新型实施方式及本实用新型范围的限制。除在此记载的实施例外，本领域技术人员还能够基于本申请权利要求书和说明书所公开的内容采用显而易见的其它技术方案，这些技术方案包括采用对在此记载的实施例的做出任何显而易见的替换和修改的技术方案，都在本实用新型的保护范围之内。
以下各实施例的说明是参考附加的图式，用以例示本实用新型可用以实施的特定实施例。本实用新型所提到的方向用语，例如上、下、前、后、左、右、内、外、侧面等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本实用新型，而非用以限制本实用新型。
参图1，高效率的HBT射频功率放大器要求所采用的功率管开启电压低、击穿电压高，工作在接近饱和状态时具有较高的效率和线性度。由于异质结双极晶体管(Heterojunction bipolar transistor，HBT)器件具有效率高、增益大、线性特性好、功率密度高、漏电流小且只需单一电源供电等特点，使得HBT非常适合射频功率放大器的设计。工程应用中，GaAs HBT和SiGe HBT是用得最为广泛的两种功率器件，在制造成本上优势明显。如图1所示，单端结构的HBT共发射极放大电路是设计HBT射频功率放大器常见方式。这种电路具有结构简单，易于设计，调试方便等优点。为了提高HBT射频功率放大器的效率，常用的方式是在射频功率管的输入输出端并联二阶谐波陷波电路(Cs1、Ls1、Cs2、Ls2)，通过调节输出功率管集电极端和基极端二次谐波阻抗来实现对输出电压和电流波形进行整形，使得输出电压波和输出电流波的交叠部分尽可能减少，从而提高效率。但是，从输出功率管集电极端向负载端看，键合线电感Lparasitic和互联线寄生参数都会成为二次谐波陷波电路的一部分，对于特定的工作频率，二次谐波陷波电路要实现短路只对特定的负载有效。当负载阻抗变化时，二次谐波陷波电路在二次谐波频率上不再短路，会呈现出一定的阻抗值，影响效率的提升。另一方面，二次谐波陷波电路对基波阻抗影响大，不能独立调节二次谐波阻抗，往往时二次谐波阻抗调节到了最小阻抗值，基波阻抗也偏离了最优值处，导致基波输出功率减小，线性度变差。
HBT射频功率放大器的设计，首先是在基波频率上完成阻抗匹配，但是为了获取功率管的最佳性能，优化谐波的阻抗匹配非常关键。谐波分量的调节对功率放大器的工作状态影响很大。没有谐波调节，设计的HBT射频功率放大器往往得不到预期的性能，尤其是工作效率会产生较大的波动。谐波调节的数据，对设计一款符合预期性能的HBT射频功率放大器很关键。当采用HBT工艺设计射频功率放大器时，经常采用的是共发射极电路结构，其简化等效电路模型如图2所示，HBT 输出功率的非线性是由于基极和发射极的非线性阻抗导致的。为了提高效率，优化HBT输入等效二极管中的电流I bed的二次谐波分量的幅值和相位是非常有效的。因为在大多数应用中，要求HBT射频功率放大器的输入输出是单端形式。
为了解决上述问题，本实用新型提供一种HBT高效率射频功率放大器，其设计电路原理如图3所示，本实用新型实施例的驱动功率管(Q0)仍采用单端共发射极放大结构，输出功率管单元(Q1、Q2)采用了推挽形式的推挽功率管。驱动功率管(Q0)和输出功率管单元(Q1、Q2)之间采用中心抽头的螺旋线巴伦完成单端到差分的转换，输出功率管输出端同样采用中心抽头的螺旋线巴伦完成差分到单端的转换，转换后的单端信号经过LC并联谐振电路再输出功率信号驱动负载天线。
具体如下，所述HBT高效率射频功率放大器100，包括：输入端RFin、驱动功率管Q0、第一螺旋线巴伦Balun1、输出功率管单元1、第二螺旋线巴伦Balun2、并联谐振电路、输出端RFout。
所述驱动功率管Q0的基极连接至所述输入端RFin，所述驱动功率管Q0的发射极连接至接地。更优的，所述驱动功率管Q0的基极与输入端RFin之间串联输入匹配电路，如输入匹配电路Cb0，实现输入阻抗匹配。
所述第一螺旋线巴伦Balun1为中心抽头结构，用于将驱动功率管Q0的单端信号转化为差分信号。所述第一螺旋线巴伦Balun1的初级线圈Lp1的第一端连接至电源电压Vcc，所述第一螺旋线巴伦Balun1的初级线圈Lp1的第二端连接至所述驱动功率管Q0的集电极。
所述输出功率管单元1包括至少两个相互并联形成推挽形式的推挽功率管，用于将所述差分信号输出。本实施方式中，所述输出功率管单元1包括相互并联形成推挽形式的第一推挽功率管Q1和第二推挽功率管Q2。当然，也可以由更多推挽功率管并联形成。
所述第一推挽功率管Q1的基极连接至所述第一螺旋线巴伦 Balun1的次级线圈Ls1的第一端，所述第一推挽功率管Q1的发射极连接至接地。
所述第二推挽功率管Q2的基极连接至所述第一螺旋线巴伦Balun1的次级线圈Ls1的第二端，所述第二推挽功率管Q2的发射极连接至接地。
所述第二螺旋线巴伦Balun2为中心抽头结构，用于将所述输出功率管单元的差分信号转换为单端信号。所述第二螺旋线巴伦Balun2的初级线圈Lp2的第一端连接至所述第一推挽功率管Q1的集电极，所述第二螺旋线巴伦Balun2的初级线圈Lp2的第二端连接至所述第二推挽功率管Q2的集电极；所述第二螺旋线巴伦Balun2的次级线圈Ls2的第一端作为输出，所述第二螺旋线巴伦Balun2的次级线圈Ls2的第二端连接至接地。
所述并联谐振电路的输入连接至所述第二螺旋线巴伦Balun2的次级线圈Ls2的第一端；所述输出端RFout连接至所述并联谐振电路的输出。
本实施方式中，所述驱动功率管Q0、所述第一推挽功率管Q1和所述第二推挽功率管Q2均为单端共发射极放大结构的HBT管。
推挽形式的输出功率管单元1产生同相位偶阶谐波(共模信号)和反相位奇阶谐波(差模信号)，输出功率管单元1的输入输出端均采用中心抽头的螺旋线巴伦。基波和二次谐波呈正交关系，彼此独立，理想情况下，基波阻抗调节到最优值后，再调节二次谐波阻抗，不会影响基波阻抗。
更优的，所述HBT高效率射频功率放大器100还包括第二电容C2，所述第二电容C2的第一端连接至所述第一螺旋线巴伦Balun1的次级线圈Ls1的中心抽头端，所述第二电容C2的第二端连接至接地；所述第二电容C2与所述第一螺旋线巴伦Balun1的初级线圈Lp1串联谐振在二次谐波频率上。
推挽形式的输出功率管单元1产生同相位偶阶谐波(共模信号) 和反相位奇阶谐波(差模信号)，输出功率管单元1的输入输出端均采用中心抽头的螺旋线巴伦。基波和二次谐波呈正交关系，彼此独立，理想情况下，基波阻抗调节到最优值后，再调节二次谐波阻抗，不会影响基波阻抗。
本实施例采用中心抽头形式的片上第一螺旋线巴伦Balun1，这种形式的巴伦具有占用芯片面积小，易于通过电容调节谐振频率的特点。第一螺旋线巴伦Balun1的初级线圈Lp1和次级线圈Ls1通过磁场耦合实现信号传递。共模信号不能从初级线圈Lp1耦合到次级线圈Ls1，而差模信号能够从初级线圈Lp1耦合到次级线圈Ls1。理想情况下，中心抽头的第一螺旋线巴伦Balun1在差分信号激励条件下，信号会全部耦合到次级线圈Ls1，中心抽头端没有任何信号。这确保了二次谐波阻抗在负载阻抗变化的条件下保持恒定。实际应用中，初级线圈Lp1和次级线圈Ls1之间不会完全耦合(耦合系数K<1)，线圈的电感值也是有限值，螺旋线的电导率为有限值，存在寄生电阻和寄生电容，线圈之间通过衬底相互耦合。这导致了在中心抽头端出现了共模信号。消除这个二次谐波共模信号的方法是在次级线圈Ls1的中心抽头端串联电容C2，与共模电感形成串联谐振，降低二次谐波对地阻抗。
本实施方式中，所述HBT高效率射频功率放大器100还包括第一电容C1和第三电容C3。所述第一电容C1与所述第一螺旋线巴伦Balun1的初级线圈Lp1并联，所述第三电容C2与所述第一螺旋线巴伦Balun1的次级线圈Ls1并联。所述第一电容C1与所述第一螺旋线巴伦Balun1的初级线圈Lp1谐振在基波频率上，所述第三电容C3与所述第一螺旋线巴伦Balun1的次级线圈Ls1谐振在基波频率上。
对差模信号而言，从第一螺旋线巴伦Balun1的初级线圈Lp1到次级线圈Ls1的耦合也是非理想的，这将增大差模信号的传输损耗。对差模信号而言，从第一螺旋线巴伦Balun1的初级线圈Lp1到次级线圈Ls1的耦合也是非理想的，这将增大差模信号的传输损耗。为了弥补差模信号的损耗，在第一螺旋线巴伦Balun1的初级线圈Lp1到次级线 圈Ls1端分别并联了第一电容C1和第三电容C3。第一电容C1和初级线圈Lp1，第三电容C3和Ls1次级线圈均并联谐振在基波频率上，增强了基波信号的传递能力。
本实施方式中，所述第二螺旋线巴伦Balun2设计在基板上。这是因为基板上的金属走线具有更高的厚度，可以获得更高Q值的电感，减少了信号传输插损。
所述HBT高效率射频功率放大器100还包括第四电容C4和第六电容C6，所述第四电容C4与所述第二螺旋线巴伦Balun2的初级线圈Lp2并联，所述第六电容C6与所述第二螺旋线巴伦Balun2的次级线圈Ls2并联。
所述第四电容C4与所述第二螺旋线巴伦Balun2的初级线圈Lp2谐振在基波频率上，所述第六电容C6与所述第二螺旋线巴伦Balun2的次级线圈Ls2谐振在基波频率上，以实现基波信号的最优功率传递。
所述HBT高效率射频功率放大器100还包括第五电容C5，所述第五电容C5的第一端分别连接至所述第二螺旋线巴伦Balun2的初级线圈Lp2的中心抽头端和所述电源电压Vcc，所述第五电容C5的第二端连接至接地。所述第五电容C5与所述第二螺旋线巴伦Balun2的初级线圈Lp2串联谐振在二次谐波频率上。从而，第一推挽功率管Q1和第二推挽功率管Q2集电极端看到的是较低的二次谐波阻抗。
所述并联谐振电路包括相互并联的谐振电感Ltk和谐振电容Ctk，所述并联谐振电路谐振在三次谐波频率上。第二螺旋线巴伦Balun2的次级线圈Ls2连接谐振电容Ctk和谐振电感Ltk组成的并联谐振电路(Tank电路)后驱动天线负载。Tank电路谐振频率为三次谐波，理想情况下，对三次谐波而言，阻抗是开路的。整形后的电压和电流波形更接近与F类功率放大器，效率更高。
为了实现较高的功率输出，第一推挽功率管Q1和第二推挽功率管Q2通常是由多个HBT管并联连接而成。由于HBT管具有随着温度升高，电流也会随之增大的特性，当多个HBT管并联连接时，为了防止 某个晶体管发生热塌陷现象，本实施方式中会在每个HBT管基极偏置电路上连接一个镇流电阻(Ballast Resistor)，同时在基极射频信号路径上串接一个电容，以实现直流信号的隔离。包含有镇流电阻的多个HBT管并联连接组成的输出功率单元，如图4所示。
本实用新型的HBT高效率射频功率放大器100中的第一推挽功率管Q1和第二推挽功率管Q2采用此种结构的输出功率单元时，则如图5所示：所述HBT高效率射频功率放大器100还包括第一镇流电阻Rb1、第一镇流电容Cb1、第二镇流电阻Rb2和第二镇流电容Cb2。所述第一镇流电阻Rb1的第一端连接至所述偏置电压Vbias，所述第一镇流电阻Rb1的第二端连接至所述第一推挽功率管Q1的基极。所述第一镇流电容Cb1的第一端连接至所述第一螺旋线巴伦Balun1的次级线圈Ls1的第一端，所述第一镇流电容Cb1的第二端连接至所述第一推挽功率管Q1的基极。
所述第二镇流电阻Rb2的第一端连接至所述偏置电压Vbias，所述第二镇流电阻Rb2的第二端连接至所述第二推挽功率管Q2的基极；所述第二镇流电容Cb2的第一端连接至所述第一螺旋线巴伦Balun1的次级线圈Ls1的第二端，所述第二镇流电容Cb2的第二端连接至所述第二推挽功率管Q2的基极。
本实施方式中，所述第一镇流电容Cb1、所述第二镇流电容Cb2、所述第三电容C3、所述第一螺旋线巴伦Balun1的次级线圈Ls1均谐振在基波频率上，以实现基波信号的良好传输。
当然，在其他实施例中，在一些工作频段上，通过合理设计第一螺旋线巴伦Balun1，第三电容C3也可以不用，则所述实施例如图6所示，其与图5所示实施例基本相同，仅通过合理设计第一螺旋线巴伦Balun1后省去第三电容C3。
与现有技术相比，本实用新型的HBT高效率射频功率放大器包括驱动功率管，第一螺旋线巴伦，用于将驱动功率管的单端信号转化为差分信号；输出功率管单元，包括至少两个相互并联形成推挽形式的 推挽功率管，用于将所述差分信号输出；第二螺旋线巴伦，用于将所述输出功率管单元的差分信号转换为单端信号；并联谐振电路，所述并联谐振电路的输入连接至所述第二螺旋线巴伦的次级线圈的第一端。由此，驱动功率管仍采用单端共发射极放大结构，输出功率管单元采用了推挽形式的功率管。驱动功率管和输出功率管单元之间采用中心抽头的第一螺旋线巴伦完成单端到差分的转换，易于通过电容调节谐振频率，确保了二次谐波阻抗在负载阻抗变化的条件下保持恒定，增强了基波信号的传递能力，降低了二次谐波对地阻抗；输出功率管单元输出端同样采用中心抽头的第二螺旋线巴伦完成差分到单端的转换，转换后的单端信号经过并联谐振电路再输出功率信号，三次谐波而言，阻抗是开路的，实现基波信号的最优功率传递，效率更高。
需要说明的是，以上参照附图所描述的各个实施例仅用以说明本实用新型而非限制本实用新型的范围，本领域的普通技术人员应当理解，在不脱离本实用新型的精神和范围的前提下对本实用新型进行的修改或者等同替换，均应涵盖在本实用新型的范围之内。此外，除上下文另有所指外，以单数形式出现的词包括复数形式，反之亦然。另外，除非特别说明，那么任何实施例的全部或一部分可结合任何其它实施例的全部或一部分来使用。

Claims (10)

  1. 一种HBT高效率射频功率放大器，其特征在于，包括，
    输入端；
    驱动功率管，所述驱动功率管的基极连接至所述输入端，所述驱动功率管的发射极连接至接地；
    第一螺旋线巴伦，所述第一螺旋线巴伦为中心抽头结构，用于将驱动功率管的单端信号转化为差分信号；所述第一螺旋线巴伦的初级线圈的第一端连接至电源电压，所述第一螺旋线巴伦的初级线圈的第二端连接至所述驱动功率管的集电极；
    输出功率管单元，所述输出功率管单元包括至少两个相互并联形成推挽形式的推挽功率管，用于将所述差分信号输出，包括第一推挽功率管和第二推挽功率管；所述第一推挽功率管的基极连接至所述第一螺旋线巴伦的次级线圈的第一端，所述第一推挽功率管的发射极连接至接地；所述第二推挽功率管的基极连接至所述第一螺旋线巴伦的次级线圈的第二端，所述第二推挽功率管的发射极连接至接地；
    第二螺旋线巴伦，所述第二螺旋线巴伦为中心抽头结构，用于将所述输出功率管单元的差分信号转换为单端信号；所述第二螺旋线巴伦的初级线圈的第一端连接至所述第一推挽功率管的集电极，所述第二螺旋线巴伦的初级线圈的第二端连接至所述第二推挽功率管的集电极；所述第二螺旋线巴伦的次级线圈的第一端作为输出，所述第二螺旋线巴伦的次级线圈的第二端连接至接地；
    并联谐振电路，所述并联谐振电路的输入连接至所述第二螺旋线巴伦的次级线圈的第一端；
    输出端，所述输出端连接至所述并联谐振电路的输出。
  2. 根据权利要求1所述的HBT高效率射频功率放大器，其特征在于，所述驱动功率管、所述第一推挽功率管和所述第二推挽功率管均为单端共发射极放大结构的HBT管。
  3. 根据权利要求1所述的HBT高效率射频功率放大器，其特征在于，所述HBT高效率射频功率放大器还包括第二电容，所述第二电容的第一端连接至所述第一螺旋线巴伦的次级线圈的中心抽头端，所述第二电容的第二端连接至接地；所述第二电容与所述第一螺旋线巴伦的初级线圈串联谐振在二次谐波频率上。
  4. 根据权利要求3所述的HBT高效率射频功率放大器，其特征在于，所述HBT高效率射频功率放大器还包括第一电容和第三电容，所述第一电容与所述第一螺旋线巴伦的初级线圈并联，所述第三电容与所述第一螺旋线巴伦的次级线圈并联；所述第一电容与所述第一螺旋线巴伦的初级线圈谐振在基波频率上，所述第三电容与所述第一螺旋线巴伦的次级线圈谐振在基波频率上。
  5. 根据权利要求1所述的HBT高效率射频功率放大器，其特征在于，所述第二螺旋线巴伦设计在基板上。
  6. 根据权利要求5所述的HBT高效率射频功率放大器，其特征在于，所述HBT高效率射频功率放大器还包括第五电容，所述第五电容的第一端分别连接至所述第二螺旋线巴伦的初级线圈的中心抽头端和所述电源电压，所述第五电容的第二端连接至接地；所述第五电容与所述第二螺旋线巴伦的初级线圈串联谐振在二次谐波频率上。
  7. 根据权利要求6所述的HBT高效率射频功率放大器，其特征在于，所述HBT高效率射频功率放大器还包括第四电容和第六电容，所述第四电容与所述第二螺旋线巴伦的初级线圈并联，所述第六电容与所述第二螺旋线巴伦的次级线圈并联；所述第四电容与所述第二螺旋线巴伦的初级线圈谐振在基波频率上，所述第六电容与所述第二螺旋线巴伦的次级线圈谐振在基波频率上。
  8. 根据权利要求1所述的HBT高效率射频功率放大器，其特征在于，所述并联谐振电路包括相互并联的谐振电感和谐振电容，所述并联谐振电路谐振在三次谐波频率上。
  9. 根据权利要求4所述的HBT高效率射频功率放大器，其特征 在于，所述HBT高效率射频功率放大器还包括第一镇流电阻、第一镇流电容、第二镇流电阻和第二镇流电容；所述第一镇流电阻的第一端连接至所述偏置电压，所述第一镇流电阻的第二端连接至所述第一推挽功率管的基极；所述第一镇流电容的第一端连接至所述第一螺旋线巴伦的次级线圈的第一端，所述第一镇流电容的第二端连接至所述第一推挽功率管的基极；所述第二镇流电阻的第一端连接至所述偏置电压，所述第二镇流电阻的第二端连接至所述第二推挽功率管的基极；所述第二镇流电容的第一端连接至所述第一螺旋线巴伦的次级线圈的第二端，所述第二镇流电容的第二端连接至所述第二推挽功率管的基极。
  10. 根据权利要求9所述的HBT高效率射频功率放大器，其特征在于，所述第一镇流电容、所述第二镇流电容、所述第三电容、所述第一螺旋线巴伦的次级线圈均谐振在基波频率上。
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