WO2023074474A1 - 半導体用フィルム状接着剤、半導体用フィルム状接着剤の製造方法、接着剤テープ、半導体装置の製造方法及び半導体装置 - Google Patents

半導体用フィルム状接着剤、半導体用フィルム状接着剤の製造方法、接着剤テープ、半導体装置の製造方法及び半導体装置 Download PDF

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Publication number
WO2023074474A1
WO2023074474A1 PCT/JP2022/038799 JP2022038799W WO2023074474A1 WO 2023074474 A1 WO2023074474 A1 WO 2023074474A1 JP 2022038799 W JP2022038799 W JP 2022038799W WO 2023074474 A1 WO2023074474 A1 WO 2023074474A1
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Prior art keywords
adhesive
film
semiconductor
mass
region
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/JP2022/038799
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English (en)
French (fr)
Japanese (ja)
Inventor
紘之 石毛
亮介 木村
慎 佐藤
恵介 大久保
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Resonac Corp
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Resonac Corp
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Application filed by Resonac Corp filed Critical Resonac Corp
Priority to KR1020247007449A priority Critical patent/KR20240093452A/ko
Priority to US18/697,008 priority patent/US20240395759A1/en
Priority to JP2023556349A priority patent/JPWO2023074474A1/ja
Priority to CN202280060026.8A priority patent/CN117916333A/zh
Publication of WO2023074474A1 publication Critical patent/WO2023074474A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/50—Amines
    • C08G59/5046—Amines heterocyclic
    • C08G59/5053—Amines heterocyclic containing only nitrogen as a heteroatom
    • C08G59/508—Amines heterocyclic containing only nitrogen as a heteroatom having three nitrogen atoms in the ring
    • C08G59/5086—Triazines; Melamines; Guanamines
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C09J163/10—Epoxy resins modified by unsaturated compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/124—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape
    • C09J2301/1242—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape the opposite adhesive layers being different
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2463/00—Presence of epoxy resin
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/322—Multilayered die-attach connectors, e.g. a coating on a top surface of a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/355—Materials of die-attach connectors of outermost layers of multilayered die-attach connectors, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the present disclosure relates to a semiconductor film adhesive, a semiconductor film adhesive manufacturing method, an adhesive tape, a semiconductor device manufacturing method, and a semiconductor device.
  • a wire bonding method using thin metal wires such as gold wires has been widely applied to connect semiconductor chips and substrates.
  • a flip chip is a semiconductor chip or substrate that is directly connected to a substrate by forming conductive projections called bumps on the semiconductor chip or substrate.
  • a connection method (FC connection method) is spreading.
  • the COB (Chip On Board) type connection method which is widely used in BGA (Ball Grid Array), CSP (Chip Size Package), etc.
  • the FC connection method is also widely used in a COC (Chip On Chip) type connection method in which connection portions (for example, bumps and wiring) are formed on semiconductor chips to connect the semiconductor chips.
  • chip stack type packages POP (Package On Package), TSV (Through -Silicon Via), etc. are also beginning to spread widely.
  • POP Package On Package
  • TSV Through -Silicon Via
  • Such a stacking/multi-leveling technique arranges semiconductor chips and the like three-dimensionally, so that the package can be made smaller than the method of two-dimensionally arranging them. It is also effective in improving the performance of semiconductors, reducing noise, reducing the mounting area, and saving power.
  • COW Chip On Wafer
  • a semiconductor package is manufactured by singulating semiconductor chips onto a semiconductor wafer after pressing (connecting) them.
  • the gang bonding method in which a plurality of semiconductor chips are aligned on a semiconductor wafer or a map substrate and temporarily pressure-bonded, these multiple semiconductor chips are finally pressure-bonded all at once to ensure connection is also attracting attention.
  • thermosetting film-like adhesive is used to connect connecting members such as semiconductor chips as described above (see Patent Document 1, for example).
  • the film adhesive is cured by heating during connection (during crimping). In this case, the cured product of the adhesive is intervening, resulting in connection failure.
  • the main object of the present disclosure is to provide a semiconductor film-like adhesive that can suppress the amount of fillet generation while ensuring sufficient connection reliability.
  • the present disclosure provides the following [1] to [18].
  • thermosetting resin contains an epoxy resin
  • thermosetting agent contains an imidazole-based curing agent.
  • the semiconductor film-like adhesive is attached from the first adhesive region side to the connection surface of the semiconductor chip or its precursor, or the connection surface of the substrate or its precursor.
  • a semiconductor chip having a first connecting portion, a base having a second connecting portion electrically connected to the first connecting portion, and the semiconductor chip and the base are joined together, and the semiconductor chip and the base are joined and a sealing portion that fills the gap between the semiconductor devices, wherein the sealing portion is a cured product of the semiconductor film-like adhesive according to any one of [1] to [12].
  • FIG. 1 is a schematic cross-sectional view showing one embodiment of the film-like adhesive for semiconductors of the present disclosure.
  • FIG. 2 is a schematic cross-sectional view showing one embodiment of the semiconductor device of the present disclosure.
  • FIG. 3 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present disclosure.
  • FIG. 4 is a process cross-sectional view schematically showing an embodiment of the method for manufacturing a semiconductor device of the present disclosure.
  • FIG. 5 is a process cross-sectional view schematically showing an embodiment of the method for manufacturing a semiconductor device of the present disclosure.
  • FIG. 6 is a process cross-sectional view schematically showing an embodiment of the method for manufacturing a semiconductor device of the present disclosure.
  • FIG. 1 is a schematic cross-sectional view showing one embodiment of the film-like adhesive for semiconductors of the present disclosure.
  • FIG. 2 is a schematic cross-sectional view showing one embodiment of the semiconductor device of the present disclosure.
  • FIG. 3 is a schematic cross-sectional view showing another embodiment
  • FIG. 7 is a process cross-sectional view schematically showing an embodiment of the method for manufacturing a semiconductor device of the present disclosure.
  • FIG. 8 is a process cross-sectional view schematically showing an embodiment of the method for manufacturing a semiconductor device of the present disclosure.
  • FIG. 9 is a process cross-sectional view schematically showing an embodiment of the method for manufacturing a semiconductor device of the present disclosure.
  • (meth)acryl means at least one of acrylic and methacryl corresponding thereto.
  • a numerical range indicated using “-” indicates a range including the numerical values described before and after "-" as the minimum and maximum values, respectively.
  • the upper and lower limits of the numerical ranges may be replaced with the values shown in the examples.
  • the upper limit value and the lower limit value described individually can be combined arbitrarily.
  • the materials exemplified below may be used singly or in combination of two or more unless otherwise specified.
  • the content of each component in the composition means the total amount of the plurality of substances present in the composition, unless otherwise specified, when a plurality of substances corresponding to each component are present in the composition.
  • a semiconductor film adhesive (hereinafter simply referred to as "film adhesive") of one embodiment is an adhesive used for connecting (joining) and sealing connection members such as semiconductor chips. It is used to join the chip and the base and to seal the gap between the semiconductor chip and the base.
  • FIG. 1 is a schematic cross-sectional view showing a film adhesive according to one embodiment.
  • the adhesive forming the first adhesive region 2 will be referred to as the first adhesive
  • the adhesive forming the second adhesive region 3 will be referred to as the second adhesive.
  • the first adhesive region 2 and the second adhesive region 3 have a predetermined thickness. For example, as shown in FIG. ).
  • the boundary between the first adhesive area 2 and the second adhesive area 3 is not necessarily sharp and may not even be visible.
  • the first adhesive region 2 and the second adhesive region 3 are adjacent to each other, but between the first adhesive region 2 and the second adhesive region 3, There may also be areas that are different from the first adhesive area 2 and the second adhesive area 3, eg areas comprising a mixture of the first adhesive and the second adhesive.
  • the film-like adhesive 1 is easily partially reduced in fluidity by light irradiation. Specifically, for example, the film-like adhesive 1 is applied to one of the two connecting members (or its precursor), and then irradiated with light to increase the fluidity of the first adhesive region 2. can be lowered. Therefore, according to the film-like adhesive 1, excessive flow of the adhesive when connecting the connecting members can be suppressed, and the amount of fillets generated can be suppressed. On the other hand, since the second adhesive region 3 of the film adhesive 1 does not have photocurability, the film adhesive 1 is placed on the first adhesive region 2 side (the second adhesive region 3 side).
  • the fluidity of the other connection member side that is, the second adhesive region 3 side
  • the film-like adhesive 1 it is also possible to ensure sufficient connection reliability.
  • the first adhesive region 2 has thermosetting property in addition to photo-curing property, and can be further cured (thermally cured) by heating while maintaining appropriate fluidity even after photo-curing. is designed to Therefore, even if the surface of the connecting portion is coated with the adhesive when the film adhesive 1 is applied, the adhesive flows and is removed during connection, so that the adhesive does not remain between the connecting portions after connection. A hardened product hardly remains.
  • the fact that the first adhesive is designed in this manner is also one of the reasons why the film-like adhesive 1 can provide sufficient connection reliability.
  • the fluidity of the adhesive as a whole at the time of connection is determined by adjusting the thickness, composition, light irradiation amount, etc. of the first adhesive region 2, as well as by adjusting the thickness, composition, etc. of the second adhesive region 3. It can also be changed by adjusting. As a result, for example, it is possible to reduce the amount of voids generated and ensure good sealing properties (adhesive filling properties).
  • the space between the connecting portions of the connecting member may not be sufficiently filled with the adhesive, which may cause problems such as voids. Since the film adhesive 1 is attached to the connection member before the fluidity of the region 2 is reduced (that is, before light irradiation), the film adhesive 1 suppresses the occurrence of such problems. You can also
  • connection reliability for example, insulation reliability
  • the main metals used in the connection parts of connection members include solder, tin, gold, silver, copper, nickel, etc. Conductive materials containing multiple types of these are also used.
  • Impurities may be generated on the surface of the connecting portion by oxidizing the metal to form an oxide film and by attaching impurities such as oxides. If such impurities remain, there is a concern that the connection reliability between the connection members will be lowered, and the advantage of adopting the connection method described above will be lost. Therefore, in order to remove the above oxide film and impurities, the film adhesive 1 may contain a flux compound. As described above, the film adhesive 1 is applied to one connecting member from the first adhesive region 2 side, and the second adhesive region 3 side flows over the connecting surface of the other connecting member.
  • the flux compound is preferably contained in the second adhesive region 3 because it is used.
  • the first adhesive region contains, for example, a photopolymerizable compound, a photoinitiator, a thermosetting resin, and a thermosetting agent.
  • a photopolymerizable compound means a compound that polymerizes by active species (radicals, cations or anions) generated by a photopolymerization initiator upon irradiation with light (e.g., ultraviolet light)
  • thermosetting resin means a compound that is cured by heat by reaction with a thermosetting agent.
  • the photopolymerizable compound may be a radically polymerizable compound, a cationically polymerizable compound, or an anionically polymerizable compound.
  • the polymerizability of the photopolymerizable compound may be selected in relation to the curability of the thermosetting resin and the thermosetting agent so as not to inhibit the reaction of the thermosetting resin and the thermosetting agent.
  • the thermosetting resin has cationic or anionic curability, it is preferable to use a radically polymerizable compound as the photopolymerizable compound.
  • the photopolymerizable compound is preferably a radically polymerizable compound.
  • a photoradical polymerization initiator is used as the photopolymerization initiator.
  • radically polymerizable compounds examples include (meth)acrylic compounds and vinyl compounds.
  • a (meth)acrylic compound is preferable from the viewpoint of excellent durability, electrical insulation and heat resistance.
  • the (meth)acrylic compound may be a compound having one or more (meth)acryloyl groups in the molecule.
  • (Meth)acrylic compounds include, for example, bisphenol A type, bisphenol F type, naphthalene type, phenol novolak type, cresol novolak type, phenol aralkyl type, biphenyl type, triphenylmethane type, dicyclopentadiene type, fluorene type, adamantane (Meth)acrylic compounds containing isocyanuric acid-type or isocyanuric acid-type skeletons; Polyfunctional (meth)acrylic compounds include pentaerythritol tri(meth)acrylate, dipentaerythritol poly(meth)acrylate (dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, etc.), trimethylolpropane di(meth)acrylates and the like.
  • polyfunctional (meth)acrylic compounds are preferable, and dipentaerythritol poly(meth)acrylate is more preferable.
  • the number of functional groups (the number of (meth)acryloyl groups) of the polyfunctional (meth)acrylic compound is preferably 2-8, more preferably 3-7, still more preferably 4-6.
  • the molecular weight of the photopolymerizable compound is, for example, 400-2000.
  • the molecular weight of the photopolymerizable compound is preferably less than 2000, more preferably 1000 or less. The smaller the molecular weight of the photopolymerizable compound, the easier the reaction proceeds and the higher the curing reaction rate.
  • the photopolymerizable compound can be used singly or in combination of two or more.
  • the content of the photopolymerizable compound in the first adhesive region 2 is preferably 1% by mass or more, preferably 3% by mass, based on the total amount of the first adhesive.
  • the above is more preferable, and 5% by mass or more is even more preferable.
  • the content of the photopolymerizable compound is preferably 10% by mass or less, more preferably 7% by mass or less, based on the total amount of the first adhesive, from the viewpoint of improving the sealing property and suppressing the generation of voids.
  • 5% by mass or less is more preferable.
  • the content of the photopolymerizable compound is preferably 1 to 10% by mass, more preferably 3 to 7% by mass, and even more preferably 3 to 5% by mass, based on the total amount of the first adhesive. .
  • the photoinitiator may be a photoradical polymerization initiator, a cationic polymerization initiator or an anionic polymerization initiator.
  • the photopolymerization initiator can be selected according to the type of the photopolymerizable compound, and a photoradical polymerization initiator is preferably used for the same reason as for the photopolymerizable compound.
  • the photoradical polymerization initiator is, for example, light containing a wavelength within the range of 150 to 750 nm, preferably light containing a wavelength within the range of 254 to 405 nm, more preferably light containing a wavelength of 365 nm (eg, ultraviolet light). It is a compound that decomposes upon irradiation to generate free radicals.
  • the radical photopolymerization initiator one type of compound may be used alone, or a plurality of types of compounds may be used in combination.
  • Photoradical polymerization initiators include oxime ester structure, bisimidazole structure, acridine structure, ⁇ -aminoalkylphenone structure, aminobenzophenone structure, N-phenylglycine structure, acylphosphine oxide structure, benzyldimethylketal structure, ⁇ -hydroxy Photopolymerization initiators having structures such as alkylphenone structures and ⁇ -hydroxyacetophenone structures are included. Among these, at least one structure selected from the group consisting of an acylphosphine oxide structure, an ⁇ -hydroxyalkylphenone structure and an ⁇ -hydroxyacetophenone structure is used from the viewpoint of reactivity and the viewpoint of more easily reducing the amount of fillets generated.
  • a compound having an acylphosphine oxide structure more preferably a compound having at least one structure selected from the group consisting of an acylphosphine oxide structure and an ⁇ -hydroxyacetophenone structure, and a compound having an acylphosphine oxide structure is more preferred.
  • compounds having an acylphosphine oxide structure include bis(2,6-dimethoxybenzoyl)-2,4,4-trimethyl-pentylphosphine oxide and phenylbis(2,4,6-trimethylbenzoyl)phosphine. oxide, 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide and the like.
  • compounds having an ⁇ -hydroxyalkylphenone structure include 1-hydroxycyclohexylphenyl ketone and the like.
  • 1-hydroxycyclohexyl phenyl ketone, phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide, and 2-hydroxy-1-(4-(4-(2-hydroxy-2-methylpropionyl) It is preferable to use at least one compound selected from the group consisting of benzyl)phenyl)-2-methylpropan-1-one, phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide, and 2-hydroxy It is more preferable to use at least one compound selected from the group consisting of -1-(4-(4-(2-hydroxy-2-methylpropionyl)benzyl)phenyl)-2-methylpropan-1-one, More preferably, phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide is used.
  • the molecular weight of the radical photopolymerization initiator is preferably 400 or more (for example, 300 to 600) from the viewpoint of suppressing volatilization due to heat during film formation or attachment.
  • the content of the photoradical polymerization initiator in the first adhesive region 2 is preferably 0.1 parts by mass or more with respect to 100 parts by mass of the photopolymerizable compound, from the viewpoint of facilitating sufficient progress of curing. 0.5 parts by mass or more is more preferable, and 1 part by mass or more is even more preferable.
  • the content of the photoradical polymerization initiator is based on 100 parts by mass of the photopolymerizable compound from the viewpoint of suppressing the shortening of the molecular chain due to the rapid progress of the curing reaction and the suppression of the remaining unreacted groups. , is preferably 5 parts by mass or less, more preferably 3 parts by mass or less, and even more preferably 1.5 parts by mass or less.
  • the content of the photoradical polymerization initiator is preferably 0.1 to 5 parts by mass, more preferably 0.5 to 3 parts by mass, with respect to 100 parts by mass of the photopolymerizable compound, and 0.5 ⁇ 1.5 parts by mass is more preferable.
  • thermosetting resins examples include epoxy resins, phenolic resins (except when contained as a curing agent), acrylic resins, and the like. Among these, epoxy resins are preferably used.
  • the content of the epoxy resin in the thermosetting resin is preferably 80% by mass or more, more preferably 90% by mass or more, based on the total amount of the thermosetting resin.
  • the content of the epoxy resin may be 100% by mass based on the total amount of the thermosetting resin.
  • Epoxy resin is a compound having two or more epoxy groups in the molecule.
  • epoxy resins include bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, phenol aralkyl type epoxy resin, biphenyl type epoxy resin, triphenylmethane.
  • type epoxy resin, triphenolmethane type epoxy resin, dicyclopentadiene type epoxy resin and various multifunctional epoxy resins can be used. These can be used singly or as a mixture of two or more. Among these, when a triphenolmethane-type epoxy resin (epoxy resin containing a triphenolmethane skeleton) is used, the amount of fillets generated tends to be further reduced.
  • the epoxy resin has a thermal weight loss rate of 5% or less at 250°C when the temperature at the time of connection is 250°C.
  • the temperature at the time of connection is 300°C, it is preferable to use an epoxy resin having a thermal weight loss rate of 5% or less at 300°C.
  • liquid epoxy resin an epoxy resin that is liquid at 25°C (hereinafter simply referred to as “liquid epoxy resin”) may be used from the viewpoint of easily suppressing the occurrence of cracks and cracks on the film surface.
  • liquid at 25°C means that the viscosity at 25°C measured with an E-type viscometer is 400 Pa ⁇ s or less.
  • Liquid epoxy resins include bisphenol A type glycidyl ether, bisphenol AD type glycidyl ether, bisphenol S type glycidyl ether, bisphenol F type glycidyl ether, hydrogenated bisphenol A type glycidyl ether, and ethylene oxide adduct bisphenol A type glycidyl ether.
  • Glycidyl ether glycidyl ether of propylene oxide adduct bisphenol A type, glycidyl ether of naphthalene resin, trifunctional or tetrafunctional glycidylamine, and the like.
  • the content of the liquid epoxy resin in the thermosetting resin is preferably 5% by mass or more, preferably 10% by mass or more, based on the total amount of the thermosetting resin, from the viewpoint of easily suppressing the occurrence of cracks and cracks on the film surface. is more preferable, and 20% by mass or more is even more preferable.
  • the content of the liquid epoxy resin is preferably 30% by mass or less based on the total amount of the thermosetting resin, from the viewpoint of easily suppressing excessive increase in tackiness of the film and from the viewpoint of easily suppressing edge fusion. , 20% by mass or less, and even more preferably 10% by mass or less.
  • the reactive functional group equivalent weight of the thermosetting resin (for example, the epoxy equivalent weight of the epoxy resin) may be 100-3000 g/eq, or may be 100-2000 g/eq or 100-1500 g/eq.
  • the reactive functional group equivalent is within the above range, the balance between reactivity and fluidity during heating tends to be good.
  • the content of the thermosetting resin in the first adhesive region 2 is preferably 25% by mass or more, and 30% by mass or more, based on the total amount of the first adhesive, from the viewpoint of easily suppressing the generation of fillets. is more preferable, and 35% by mass or more is even more preferable.
  • the content of the thermosetting resin is 50% by mass or less based on the total amount of the first adhesive from the viewpoint of facilitating obtaining good sealing properties and the viewpoint of facilitating the suppression of void generation. It is preferably 45% by mass or less, more preferably 40% by mass or less.
  • the content of the thermosetting resin may be set in relation to the content of the photopolymerizable compound.
  • the ratio of the content of the thermosetting resin to the content of the photopolymerizable compound in the first adhesive region 2 is 3 to 11 in mass ratio, high connection reliability is easily obtained, and the fillet There is also a tendency for the amount of generated to be further reduced.
  • the above ratio may be 5 or more, 7 or more, or 9 or more from the viewpoint of further reducing the amount of fillets generated, and in addition to the above effects, the viewpoint that good sealing properties are easily obtained, and From the viewpoint of easily suppressing the generation of voids, it may be 10 or less.
  • thermosetting agent a known curing agent known as a curing agent for thermosetting resins can be used.
  • Thermal curing agents also include materials commonly known as curing accelerators.
  • the thermosetting agent may be, for example, a phenol resin-based curing agent, an acid anhydride-based curing agent, an amine-based curing agent, an imidazole-based curing agent, a phosphine-based curing agent, or the like. can be done.
  • phenolic resin curing agents, acid anhydride curing agents, amine curing agents, and imidazole curing agents exhibit flux activity that suppresses the formation of oxide films on connection parts. can improve connection reliability.
  • an imidazole-based curing agent from the viewpoint that curing can proceed rapidly when heating is performed at a low temperature.
  • imidazole curing agents examples include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole.
  • a latent curing agent obtained by microencapsulating these can also be used. These can be used alone or in combination of two or more. Among these, a compound having a triazine ring is preferably used from the viewpoint of facilitating obtaining better sealing properties and facilitating suppression of void generation.
  • the content of the thermosetting agent in the first adhesive region 2 is preferably 1 part by mass or more, preferably 2 parts by mass or more with respect to 100 parts by mass of the thermosetting resin, from the viewpoint of improving curability when heated. is more preferable, and 3 parts by mass or more is even more preferable.
  • the content of the thermosetting agent is preferably 10 parts by mass or less with respect to 100 parts by mass of the thermosetting resin from the viewpoint of making it more difficult for the first adhesive to intervene between the connection parts. It is more preferably not more than 5 parts by mass, and even more preferably not more than 5 parts by mass.
  • the first adhesive region 2 may include, for example, thermoplastic resins, fillers, etc., as components other than those described above.
  • thermoplastic resin contributes to the improvement of heat resistance and film formability.
  • thermoplastic resins include phenoxy resins, polyimide resins, polyamide resins, polycarbodiimide resins, cyanate ester resins, acrylic resins, polyester resins, polyethylene resins, polyethersulfone resins, polyetherimide resins, polyvinyl acetal resins, and urethane resins. and acrylic rubber.
  • phenoxy resins, polyimide resins, acrylic rubbers, cyanate ester resins and polycarbodiimide resins are preferable, and phenoxy resins, polyimide resins and acrylic rubbers are more preferable, from the viewpoint of easily obtaining excellent heat resistance and film formability.
  • These thermoplastic resins can be used alone or as a mixture or copolymer of two or more.
  • the weight average molecular weight of the thermoplastic resin is, for example, 10,000 or more, and may be 20,000 or more, or 30,000 or more. Such a thermoplastic resin can further improve the heat resistance and film formability of the first adhesive.
  • the weight average molecular weight of the thermoplastic resin may be 1,000,000 or less, or may be 500,000 or less, from the viewpoint of easily obtaining the effect of improving heat resistance.
  • the weight average molecular weight means the weight average molecular weight measured in terms of polystyrene using high performance liquid chromatography (manufactured by Shimadzu Corporation, trade name: C-R4A). For the measurement, for example, the following conditions can be used.
  • the glass transition temperature (Tg) of the thermoplastic resin is preferably 120° C. or lower, more preferably 100° C. or lower, and 85° C. or lower, from the viewpoint of excellent adhesion of the film adhesive 1 to a connection member (for example, a semiconductor chip). is more preferred.
  • the above Tg is the Tg measured using a DSC (manufactured by PerkinElmer, trade name: DSC-7 type) under the conditions of a sample amount of 10 mg, a temperature increase rate of 10 ° C./min, and a measurement atmosphere of air. .
  • the content of the thermoplastic resin in the first adhesive region 2 is 5% by mass based on the total amount of the first adhesive, from the viewpoint that the heat resistance and film formability of the first adhesive are easily improved.
  • the above is preferable, 7% by mass or more is more preferable, and 10% by mass or more is even more preferable.
  • the content of the thermoplastic resin is preferably 30% by mass or less, more preferably 25% by mass or less, more preferably 20% by mass or less, based on the total amount of the first adhesive, from the viewpoint of easily suppressing the generation of fillets. More preferred.
  • the filler is effective in controlling the viscosity of the first adhesive, the physical properties of the cured product of the first adhesive, and the like. Specifically, by using a filler, it is possible to suppress the generation of voids at the time of connection, reduce the moisture absorption rate of the cured product of the first adhesive, and the like.
  • the filler may be an inorganic filler (inorganic particles) or an organic filler (organic particles). Inorganic fillers include insulating inorganic fillers such as glass, silica, alumina, titanium oxide, mica, and boron nitride.
  • organic fillers include resin fillers (resin particles).
  • resin fillers include polyurethane and polyimide.
  • the resin filler can impart flexibility at high temperatures such as 260°C. It should be noted that an organic filler composed of a thermoplastic resin does not correspond to the above thermoplastic resin.
  • the filler is preferably insulating.
  • the first adhesive preferably does not contain a filler (conductive filler) containing a conductive material such as silver, solder, or carbon black.
  • the physical properties of the filler may be appropriately adjusted by surface treatment.
  • the filler may be a surface-treated filler from the viewpoint of improving dispersibility or adhesive strength.
  • surface treatment agents include glycidyl (epoxy), amine, phenyl, phenylamino, (meth)acrylic and vinyl compounds.
  • the average particle size of the filler is, for example, 0.5 to 1.5 ⁇ m.
  • the average particle size of the filler is preferably 1.5 ⁇ m or less from the viewpoint of preventing entrapment during flip-chip bonding, and more preferably 1.0 ⁇ m or less from the viewpoint of excellent visibility (transparency).
  • the average particle diameter of the filler is the particle diameter at the point corresponding to 50% volume when the cumulative frequency distribution curve by particle diameter is obtained with the total volume of the particles as 100%, and the particle size using the laser diffraction scattering method. It can be measured with a distribution measuring device or the like.
  • the content of the filler in the first adhesive region 2 is the first adhesive region 2 from the viewpoint of suppressing a decrease in heat dissipation, and from the viewpoint of easily suppressing the generation of voids, an increase in the moisture absorption rate, etc. Based on the total amount of the adhesive, 25% by mass or more is preferable, 30% by mass or more is more preferable, and 35% by mass or more is even more preferable.
  • the content of the filler is preferably 60% by mass or less, more preferably 55% by mass or less, based on the total amount of the first adhesive, from the viewpoint of suppressing the occurrence of filler biting (trapping) into the connection part. Preferably, 50% by mass or less is more preferable.
  • the content of the inorganic filler in the first adhesive region 2 is 60% by mass or more, 70% by mass or more, based on the total amount of filler in the first adhesive region 2.
  • the first adhesive region 2 may further contain additives such as antioxidants, silane coupling agents, titanium coupling agents, leveling agents, and ion trapping agents. These can be used individually by 1 type or in combination of 2 or more types. The contents of these additives may be appropriately adjusted so that the effects of each additive are exhibited.
  • the first adhesive region 2 may contain a flux compound to be described later, but the content of the flux compound is preferably less than 0.5% by mass based on the total amount of the second adhesive, Less than 0.01% by mass is more preferable, and 0% by mass is even more preferable.
  • the first adhesive has radical polymerizability (radical curability)
  • the curing of the first adhesive is likely to be inhibited by the flux compound, so the first adhesive preferably does not contain a flux compound.
  • the thickness of the first adhesive region 2 (the length in the thickness direction of the film adhesive 1) depends on the height of the connection portion of the connection member to which the film adhesive 1 is attached before light irradiation. It may be set as appropriate. Assuming that the height of the connecting portion is y1 and the thickness of the first adhesive region 2 is x1, the relationship between x1 and y1 makes it difficult for the cured first adhesive to intervene between the connecting portions. , x1 ⁇ y1 is preferably satisfied, and 1.0x1 ⁇ y1 ⁇ 1.5x1 is more preferably satisfied, from the viewpoint of further improving the connection reliability. Specifically, the thickness of the first adhesive region 2 may be 1-50 ⁇ m, 3-50 ⁇ m, 4-30 ⁇ m or 5-20 ⁇ m.
  • the second adhesive region 3 contains, for example, a thermosetting resin, a thermosetting agent, and a flux compound.
  • thermosetting resin and thermosetting agent the same ones as those exemplified as the thermosetting resin and thermosetting agent contained in the first adhesive region 2 can be used. Preferred examples of the thermosetting resin and thermosetting agent are also the same as for the first adhesive region 2 .
  • the thermosetting resin and thermosetting agent in the first adhesive region 2 and the thermosetting resin and thermosetting agent in the second adhesive region 3 may be the same or different.
  • the content of the thermosetting resin in the second adhesive region 3 is preferably 25% by mass or more, preferably 30% by mass or more, based on the total amount of the second adhesive, from the viewpoint of easily suppressing the generation of fillets. is more preferable, and 35% by mass or more is even more preferable.
  • the content of the thermosetting resin is preferably 50% by mass or less, more preferably 45% by mass or less, based on the total amount of the second adhesive, from the viewpoint of easily obtaining good sealing properties and adhesiveness. , 40% by mass or less is more preferable.
  • the content of the thermosetting agent in the second adhesive region 3 is preferably 1 part by mass or more, preferably 2 parts by mass or more with respect to 100 parts by mass of the thermosetting resin, from the viewpoint of improving curability when heated. is more preferable, and 3 parts by mass or more is even more preferable.
  • the content of the thermosetting agent is preferably 10 parts by mass or less with respect to 100 parts by mass of the thermosetting resin from the viewpoint of making it more difficult for the second adhesive to intervene between the connection parts. It is more preferably not more than 5 parts by mass, and even more preferably not more than 5 parts by mass. Note that the thermosetting resin is the thermosetting resin in the second adhesive region 3 .
  • a flux compound is a compound with flux activity.
  • any known flux compound can be used without particular limitation as long as it can reduce and remove an oxide film on the surface of solder or the like to facilitate metal bonding.
  • a flux compound may be used individually by 1 type or in combination of 2 or more types.
  • the flux compound preferably has a carboxy group, more preferably two or more carboxy groups, from the viewpoint of obtaining sufficient flux activity and more excellent connection reliability. It is more preferable to have A compound having two or more carboxy groups is less likely to volatilize at high temperatures during connection than a compound having one carboxy group (monocarboxylic acid). Therefore, the compound can further suppress the generation of voids. A compound having two carboxy groups is more effective in suppressing an increase in the viscosity of the film-like adhesive 1 during storage, connection work, etc. than a compound having three or more carboxy groups.
  • a compound having a group represented by the following formula (1) is preferably used as the flux compound having a carboxy group.
  • R 1 represents a hydrogen atom or an electron donating group.
  • R 1 is preferably electron-donating.
  • the second adhesive contains an epoxy resin and further contains a compound in which R 1 is an electron-donating group among compounds having a group represented by formula (1). is more preferred. In this case, even in the flip-chip bonding method, it becomes easy to manufacture a semiconductor device that is superior in reflow resistance and connection reliability.
  • electron-donating groups include alkyl groups, hydroxyl groups, amino groups, alkoxy groups, and alkylamino groups.
  • the electron-donating group is preferably a group that hardly reacts with other components (for example, epoxy resin). Specifically, an alkyl group, a hydroxyl group or an alkoxy group is preferable, and an alkyl group is more preferable.
  • the alkyl group may be linear or branched, but is preferably linear.
  • an alkyl group having 1 to 10 carbon atoms is preferable, and an alkyl group having 1 to 5 carbon atoms is more preferable.
  • the greater the number of carbon atoms in the alkyl group the greater the electron-donating ability and steric hindrance.
  • An alkyl group having a carbon number within the above range has an excellent balance between electron-donating properties and steric hindrance.
  • a compound represented by the following formula (2) can be suitably used as the flux compound having two carboxy groups.
  • the compound represented by the following formula (2) can further improve the reflow resistance and connection reliability of the semiconductor device.
  • R 1 has the same meaning as in formula (1).
  • R2 represents a hydrogen atom or an electron-donating group, and n represents an integer of 0 or 1 or more.
  • R 2 The electron-donating properties exhibited by R 2 are the same as the examples of electron-donating groups described above for R 1 .
  • R2 may be the same as or different from R1 .
  • Multiple R 2 may be the same or different.
  • n in formula (2) is 1 or more. When n is 1 or more, compared to when n is 0, the flux compound is less likely to volatilize even at high temperatures during connection, and the generation of voids can be further suppressed. Also, n in formula (2) is preferably 15 or less, more preferably 11 or less, and may be 6 or less or 4 or less. When n is 15 or less, even better connection reliability can be obtained.
  • Such flux compounds include dicarboxylic acids such as succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, and dicarboxylic acids of these dicarboxylic acids.
  • dicarboxylic acids such as succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, and dicarboxylic acids of these dicarboxylic acids.
  • Compounds in which the 2-position of the acid is substituted with an electron-donating group eg, 2-methylglutaric acid
  • the melting point of the flux compound is preferably 150°C or lower, more preferably 140°C or lower, and even more preferably 130°C or lower. Such a flux compound tends to exhibit sufficient flux activity before the curing reaction between the epoxy resin and the curing agent occurs. Therefore, by using such a flux compound, a semiconductor device with even better connection reliability can be obtained.
  • the flux compound is preferably solid at room temperature (25°C).
  • the melting point of the flux compound is preferably 25° C. or higher, more preferably 50° C. or higher.
  • the melting point of 150°C or lower means that the upper limit of the melting point is 150°C or lower
  • the melting point of 25°C or higher means that the lower limit of the melting point is 25°C or higher. means.
  • the content of the flux compound in the second adhesive region 3 is preferably 0.1% by mass or more, and preferably 0.3% by mass, based on the total amount of the second adhesive, from the viewpoint of obtaining a better flux effect. % or more is more preferable, and 0.5% by mass or more is even more preferable.
  • the content of the flux compound is preferably 5% by mass or less, more preferably 3% by mass or less, and 2% by mass, based on the total amount of the second adhesive, from the viewpoint of reducing the amount of warpage of a wafer when manufacturing a semiconductor device. More preferred are:
  • the second adhesive region 3, like the first adhesive region 2, may further contain filler, thermoplastic resin, and the like. These can be the same as those exemplified as those that can be contained in the first adhesive region 2 . These preferred examples are also the same as for the first adhesive region 2 .
  • the filler in the first adhesive region 2 and the filler in the second adhesive region 3 can be the same or different. The same applies to thermoplastic resins.
  • the content of the thermoplastic resin in the second adhesive region 3 is 5% by mass based on the total amount of the second adhesive, from the viewpoint of easily improving the heat resistance and film formability of the second adhesive.
  • the above is preferable, 7% by mass or more is more preferable, and 10% by mass or more is even more preferable.
  • the content of the thermoplastic resin is preferably 30% by mass or less, more preferably 25% by mass or less, more preferably 20% by mass or less, based on the total amount of the second adhesive, from the viewpoint of easily suppressing the generation of fillets. More preferred.
  • the content of the filler in the second adhesive region 3 is the second adhesive region 3 from the viewpoint of suppressing a decrease in heat dissipation, and from the viewpoint of easily suppressing the generation of voids, an increase in the moisture absorption rate, etc. Based on the total amount of the adhesive, 25% by mass or more is preferable, 30% by mass or more is more preferable, and 35% by mass or more is even more preferable.
  • the content of the filler is preferably 60% by mass or less, more preferably 55% by mass or less, based on the total amount of the second adhesive, from the viewpoint of suppressing the occurrence of filler biting (trapping) into the connection portion. Preferably, 50% by mass or less is more preferable.
  • the second adhesive region 3 may further contain additives exemplified as additives that can be contained in the first adhesive region 2.
  • additives exemplified as additives that can be contained in the first adhesive region 2.
  • the contents of these additives may be appropriately adjusted so that the effects of each additive are exhibited.
  • the second adhesive region 3 does not contain a combination of a photopolymerizable compound and a photopolymerization initiator. If no photopolymerization initiator is used, the second adhesive region 3 may contain a compound that can be contained in the first adhesive region 2 as a photopolymerizable compound. However, from the viewpoint of preventing reaction with active species generated when the first adhesive region 2 is cured, the second adhesive region 3 contains the photopolymerization initiator contained in the first adhesive region. It is preferable not to contain a compound that is polymerized by the generated active species.
  • the content of the compound polymerized by the active species generated by the photopolymerization initiator is preferably 0.5% by mass or less, more preferably 0.05% by mass or less, more preferably 0.05% by mass or less, based on the total amount of the second adhesive. % by mass is more preferred.
  • the second adhesive region 3 does not contain a radically polymerizable compound, because it becomes easier.
  • the content of the radically polymerizable compound is preferably 0.5% by mass or less, more preferably 0.05% by mass or less, and still more preferably 0% by mass, based on the total amount of the second adhesive.
  • the thickness of the second adhesive region 3 (the length in the thickness direction of the film adhesive 1) may be 1 to 50 ⁇ m, 3 to 50 ⁇ m, 4 to 30 ⁇ m, or 5 to 20 ⁇ m. .
  • the thickness of the second adhesive area 3 may be 0.5-2 times the thickness of the first adhesive area 2, 0.5-2.5 times or 0.5-3 times. There may be.
  • the thickness of the film-like adhesive 1 (for example, the sum of the thickness of the first adhesive region 2 and the thickness of the second adhesive region 3) may be appropriately set in relation to the connecting portion of the connecting member. .
  • the sum of the heights of the connecting portions is x
  • the total thickness of the film adhesive is y
  • the relationship between x and y is 0.70x from the viewpoint of connectivity during crimping and adhesive filling. It is preferable to satisfy ⁇ y ⁇ 1.3x, and it is more preferable to satisfy 0.80x ⁇ y ⁇ 1.2x. From the viewpoint of making it difficult for the cured product of the first adhesive to intervene between the connecting portions and further improving connection reliability, it is preferable to satisfy y>x.
  • the thickness of the film adhesive 1 may be 2 to 100 ⁇ m, 6 to 100 ⁇ m, 8 to 60 ⁇ m, or 10 to 40 ⁇ m.
  • the film-like adhesive 1 is applied on the side of the first adhesive region 2 (the side opposite to the second adhesive region 3) and/or on the side of the second adhesive region 3 (the side of the first adhesive
  • a substrate such as a support film or a protective film may be provided on the surface opposite to the region 2).
  • a laminate comprising a substrate and a film adhesive provided on the substrate is referred to as an adhesive tape.
  • the base material a base material exemplified as a base material used in the method for producing a film-like adhesive described later can be used.
  • the material is a back grind tape.
  • the back grind tape is usually configured so that one main surface side serves as an adhesive layer. , so that the adhesive layer and the film-like adhesive are in contact with each other).
  • the thickness of the substrate 3 (for example, the thickness of the back grind tape) may be 20-300 ⁇ m.
  • the adhesive tape is a laminate of a substrate and a film-shaped adhesive obtained by a method for producing a film-shaped adhesive, which is described later, that is, a method of applying a coating liquid on a substrate, forming a coating film, and drying it. It may be a body, or a laminate obtained by attaching a substrate to the film adhesive 1 (for example, by laminating the film adhesive 1 and the substrate).
  • the base material is a back grind tape
  • the coating liquid is applied and dried on the adhesive layer of the back grind tape, problems such as breakage of the adhesive layer and migration of components between the adhesive and the adhesive may occur. Therefore, it is preferable to obtain an adhesive tape by applying a back grind tape to the film adhesive 1 .
  • An embodiment of the method for producing the film-like adhesive 1 comprises a first adhesive layer having photocurability and thermosetting properties, and a second adhesive layer having thermosetting properties but no photocurability. Providing one of the layers on top of the other.
  • the first adhesive layer is a layer composed of the first adhesive described above, and forms the first adhesive region 2 in the film adhesive 1 .
  • the second adhesive layer is a layer composed of the above second adhesive, and forms the second adhesive region 3 in the film adhesive 1 .
  • the step is, for example, a step of laminating a first adhesive film comprising the first adhesive layer and a second adhesive film comprising the second adhesive layer.
  • the method for producing the film adhesive 1 may further include a step of preparing the first adhesive film and the second adhesive film.
  • the step of preparing the first adhesive film may include forming a first adhesive layer on a base material (for example, a film-like base material).
  • a base material for example, a film-like base material.
  • a photopolymerizable compound, a photopolymerization initiator, a thermosetting resin, a thermosetting agent, and, if necessary, other (filler, thermoplastic resin, additives, etc.) are added to an organic solvent and dissolved or dispersed by stirring, mixing, kneading, or the like to prepare a coating solution containing the first adhesive.
  • the above-described coating solution is applied onto the substrate that has been subjected to release treatment using a knife coater, roll coater, applicator, or the like to form a coating film, and then the organic solvent is reduced from the coating film by heating. Thereby, a first adhesive layer can be formed on the substrate.
  • the organic solvent used for the preparation of the coating liquid preferably has the property of uniformly dissolving or dispersing each component. Toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, and ethyl acetate. These organic solvents can be used alone or in combination of two or more.
  • Stirring, mixing and kneading in preparing the coating liquid can be carried out using, for example, a stirrer, a kneader, a three-roll mill, a ball mill, a bead mill, or a homodisper.
  • the substrate is not particularly limited as long as it has heat resistance that can withstand the heating conditions when the organic solvent is volatilized, such as polypropylene film, polyolefin film such as polymethylpentene film, polyethylene terephthalate film, and polyethylene naphthalate film.
  • examples include polyester films, polyimide films and polyetherimide films.
  • the substrate is not limited to a single layer made of these films, and may be a multilayer film made of two or more materials.
  • the base material may be a film having a surface subjected to release treatment.
  • Drying conditions for volatilizing the organic solvent from the coating film on the substrate are preferably conditions under which the organic solvent is sufficiently volatilized, specifically, heating at 50 to 200 ° C. for 0.1 to 90 minutes. It is preferable to If there is no effect on voids or viscosity adjustment after mounting, the organic solvent is preferably removed to 1.5% by mass or less with respect to the total amount of the first adhesive.
  • the step of providing the second adhesive film may include forming a second adhesive layer on the substrate. Except for using a thermosetting resin, a thermosetting agent, a flux compound, and optionally other components (fillers, thermoplastic resins, additives, etc.), the first adhesive layer A second adhesive layer can be formed on the substrate by a method similar to the forming method.
  • Examples of methods for bonding the first adhesive film and the second adhesive film include hot pressing, roll lamination, and vacuum lamination. Lamination may be performed under heating conditions of, for example, 30 to 120°C.
  • the film-like adhesive 1 is, for example, one of a first adhesive layer and a second adhesive layer formed on a base material, and then the obtained first adhesive layer or the second adhesive layer It may be obtained by forming the other of the first adhesive layer and the second adhesive layer on a layer.
  • the first adhesive layer and the second adhesive layer can be formed by the method described above.
  • the film adhesive 1 may be obtained, for example, by forming the first adhesive and the second adhesive substantially simultaneously on the substrate.
  • methods for simultaneously coating the first adhesive and the second adhesive include coating methods such as a sequential coating method and a multilayer coating method.
  • FIG. 2 is a schematic cross-sectional view showing one embodiment of a semiconductor device.
  • the semiconductor device 100 shown in FIG. 2A includes a semiconductor chip 20 and a substrate 25 facing each other, and wires (a first connecting portion and a second connecting portion) arranged on the surfaces of the semiconductor chip 20 and the substrate 25 facing each other. ) 15, connection bumps 30 for connecting the wirings 15 of the semiconductor chip 20 and the substrate 25, and adhesives (first adhesive and second adhesive) filling the gaps between the semiconductor chip 20 and the substrate 25. and a sealing portion 40 made of a cured product.
  • the semiconductor chip 20 and substrate 25 are flip-chip connected by wiring 15 and connection bumps 30 .
  • the wiring 15 and the connection bumps 30 are sealed with a cured adhesive and are isolated from the external environment.
  • the sealing portion 40 has an upper portion 40a containing a cured product of the first adhesive and a lower portion 40b containing a cured product of the second adhesive.
  • the semiconductor device 200 shown in FIG. 2B includes a semiconductor chip 20 and a substrate 25 facing each other, and bumps (first connecting portion and second connecting portion) arranged on the surfaces of the semiconductor chip 20 and the substrate 25 facing each other. ) 32 , and a sealing portion 40 made of cured adhesives (first adhesive and second adhesive) that fills the gap between the semiconductor chip 20 and the base 25 .
  • the semiconductor chip 20 and the substrate 25 are flip-chip connected by connecting the opposing bumps 32 to each other.
  • the bumps 32 are sealed with a cured adhesive and are isolated from the external environment.
  • the sealing portion 40 has an upper portion 40a containing a cured product of the first adhesive and a lower portion 40b containing a cured product of the second adhesive.
  • the semiconductor chip 20 is not particularly limited, and a semiconductor chip composed of an elemental semiconductor composed of the same type of element such as silicon or germanium, or a semiconductor chip composed of a compound semiconductor such as gallium arsenide or indium phosphide is used. be able to.
  • the substrate 25 is not particularly limited as long as it is used for mounting the semiconductor chip 20, and examples thereof include semiconductor chips, semiconductor wafers, wiring circuit boards, and the like.
  • An example of a semiconductor chip that can be used as the substrate 25 is the same as the example of the semiconductor chip 20 described above, and the same semiconductor chip as the semiconductor chip 20 may be used as the substrate 25 .
  • a semiconductor wafer that can be used as the substrate 25 is not particularly limited, and may have a configuration in which a plurality of semiconductor chips exemplified in the semiconductor chip 20 are connected.
  • the wiring circuit board that can be used as the substrate 25 is not particularly limited.
  • a circuit board having wiring (wiring pattern) 15 formed by removing portions by etching, a circuit board having wiring 15 formed on the surface of the insulating substrate by metal plating or the like, and a conductive material printed on the surface of the insulating substrate A circuit board or the like on which the wiring 15 is formed can be used.
  • connection parts such as the wiring 15 and the bumps 32 are mainly composed of gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper, etc.). ), nickel, tin, lead, etc., and may contain multiple metals.
  • gold, silver, and copper are preferable, and silver and copper are more preferable, from the viewpoint of making the package excellent in electrical conductivity and thermal conductivity of the connection part.
  • silver, copper and solder which are inexpensive materials, are preferred, copper and solder are more preferred, and solder is even more preferred.
  • solder is more preferable, and gold and silver are more preferable.
  • the component metal layer may be formed by, for example, plating. This metal layer may consist of a single component only, or may consist of a plurality of components. Moreover, the metal layer may have a structure in which a single layer or a plurality of metal layers are laminated.
  • the semiconductor device may be one in which a plurality of structures (packages) as shown in the semiconductor devices 100 and 200 are stacked.
  • the semiconductor devices 100 and 200 are gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper, etc.), tin, nickel. may be electrically connected to each other by bumps, wirings, or the like.
  • TSV Through-Silicon Via
  • the wiring 15 formed on the interposer 50 is connected to the wiring 15 of the semiconductor chip 20 via the connection bumps 30, whereby the semiconductor chip 20 and the interposer 50 are flip-chip connected.
  • the gap between the semiconductor chip 20 and the interposer 50 is filled with cured adhesives (first adhesive and second adhesive) to form a sealing portion 40 .
  • the semiconductor chips 20 are repeatedly laminated via the wirings 15, the connection bumps 30 and the sealing portion 40. As shown in FIG.
  • the wirings 15 on the pattern surfaces on the front and back of the semiconductor chip 20 are connected to each other by through-electrodes 34 filled in holes passing through the inside of the semiconductor chip 20 .
  • Copper, aluminum, or the like can be used as the material of the through electrode 34 .
  • the semiconductor film adhesive of the present embodiment can be applied as a semiconductor film adhesive between opposing semiconductor chips 20 and between the semiconductor chip 20 and the interposer 50 in such TSV technology.
  • the semiconductor chip in a bump forming method with a high degree of freedom such as area bump chip technology, can be directly mounted on the motherboard as it is without an interposer.
  • the film-like adhesive for semiconductors of this embodiment can also be applied when such a semiconductor chip is directly mounted on a motherboard.
  • the film-like adhesive for semiconductors of the present embodiment can also be applied to seal a gap (gap) between two printed circuit boards when laminating two printed circuit boards.
  • a method for manufacturing a semiconductor device includes, for example, a light irradiation step of irradiating a first adhesive region 2 of a film-like adhesive 1 with light, and a semiconductor chip and a substrate are coated with a semiconductor film after light irradiation. and a step of heating and bonding in a state in which the connection portions are arranged to face each other with a similar adhesive.
  • the film adhesive 1 is attached from the first adhesive region 2 side to the connection surface of the semiconductor chip or its precursor, or the connection surface of the substrate or its precursor.
  • the semiconductor chip precursor means a member that becomes a semiconductor chip by processing.
  • a specific example of a semiconductor chip precursor is a semiconductor wafer. The same is true for the substrate precursor.
  • a method for manufacturing a semiconductor device comprises: a film-like adhesive for a semiconductor; a step of preparing an adhesive tape comprising a back grind tape; and sticking the adhesive tape to the connecting surface of the precursor of the semiconductor chip or the precursor of the substrate from the film adhesive for semiconductor side.
  • a lamination step and a back-grinding step of grinding the precursor to which the adhesive tape is attached from the side opposite to the adhesive tape may be further provided.
  • the light irradiation in the light irradiation step may be performed through the backgrinding tape, but is preferably performed after removing the backgrinding tape after the backgrinding step.
  • a manufacturing method of one embodiment includes steps (a) to (e) shown below.
  • a step of preparing a laminate 6 comprising a film-like adhesive 1 provided so that the is on the semiconductor wafer A side see FIG.
  • step (b) may not be performed when using a semiconductor wafer whose thickness has been adjusted in advance.
  • step (c) may be performed before step (f), and may be performed before step (b) or after step (d).
  • the step (a) may be a step of preparing the laminated body 6 that has been produced in advance, or a step of producing the laminated body 6 .
  • the laminate 6 may be produced, for example, by the following method.
  • an adhesive tape having a base material 4 provided on the second adhesive region 3 side of the film adhesive 1 is prepared and placed in a predetermined device (see FIG. 4(a)).
  • the base material 4 is, for example, a back grind tape.
  • a semiconductor wafer A having connection portions 5 (wiring, bumps, etc.) on one main surface is prepared, and a film-like film is formed on the main surface of the semiconductor wafer A (the surface on which the connection portions 5 are provided, the connection surface).
  • Apply adhesive 1 As a result, a laminate 6 is obtained in which the semiconductor wafer A, the first adhesive region 2, and the second adhesive region 3 are laminated in this order (see FIG. 4B).
  • the application of the film adhesive 1 can be performed by hot pressing, roll lamination, vacuum lamination, or the like.
  • the supply area and thickness of the film-like adhesive 1 are appropriately set according to the size of the semiconductor wafer and base, the height of the connecting portion, and the like. In FIG. 4, the thickness of the film-like adhesive 1 is greater than the height of the connecting portion 5 of the semiconductor wafer A, and the connecting portion 5 is covered with the film-like adhesive 1. The thickness may be smaller than the height of the connecting portion 5 .
  • step (b) for example, a grinder G is used to grind the semiconductor wafer A of the laminate 6 (see FIGS. 5A and 5B). Thereby, the semiconductor wafer A is thinned.
  • the thickness of the semiconductor wafer after grinding may be, for example, 10 ⁇ m to 300 ⁇ m. From the viewpoint of miniaturization and thinning of semiconductor devices, it is preferable to set the thickness of the semiconductor wafer to 20 ⁇ m to 100 ⁇ m.
  • step (c) the laminate 6 is irradiated with light to photo-cure the first adhesive region 2 (see FIGS. 6A and 6B).
  • the first adhesive region after photocuring is indicated by reference numeral "2'".
  • Irradiation of light can be performed, for example, by irradiating irradiation light (for example, ultraviolet light) within a wavelength range of 150 to 750 nm from a light source L arranged on the film adhesive 1 side.
  • irradiation light for example, ultraviolet light
  • the light source L for example, a low-pressure mercury lamp, a medium-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a xenon lamp, a metal halide lamp, an LED light source, or the like can be used.
  • the irradiation amount of light can be adjusted as appropriate.
  • the integrated light amount of light having a wavelength of 365 nm may be 100 mJ/cm 2 or more, 200 mJ/cm 2 or more, or 300 mJ/cm 2 or more.
  • the irradiation amount of light may be, for example, 1000 mJ/cm 2 or less, 700 mJ/cm 2 or less, or 500 mJ/cm 2 or less in terms of the integrated light amount of light having a wavelength of 365 nm.
  • the light irradiation may be performed while the base material 4 is attached to the laminate 6, and the light irradiation may be performed after the base material 4 is peeled off. may be performed.
  • the step (c) may also serve as a step for peeling the substrate 4 .
  • step (d) for example, first, a dicing tape 7 is attached to the semiconductor wafer A side of the laminate 6, and this is placed in a predetermined device (see FIG. 7A).
  • the base material 4 may be peeled off before or after attaching the laminate 6 to the dicing tape 7 .
  • the laminate 6 is diced with a dicing saw D. As shown in FIG. In this way, the laminated body 6 is singulated, and a semiconductor chip 8 with a film-like adhesive provided with the film-like adhesive 1a on the semiconductor chip A' is obtained (see FIG. 7(b)).
  • a connection portion 5 is provided on the surface of the semiconductor chip A' on the film adhesive 1a side.
  • the film-like adhesive 1a has a first adhesive region (region made of a photocured first adhesive) 2a after photocuring and a second adhesive region (region made of the second adhesive) 3a. have.
  • Step (e) In the step (e), for example, by expanding the dicing tape 7, the semiconductor chips 8 with the film-like adhesive obtained by the dicing are pushed up from the dicing tape 7 side with the needle N while being separated from each other.
  • the semiconductor chip 8 with film-like adhesive is picked up from the side of the film-like adhesive 1a by a pick-up tool P (see FIG. 8).
  • the picked-up semiconductor chip 8 with film-like adhesive is transferred to a bonding tool and used for bonding in step (f).
  • Step (f) In the step (f), for example, first, a substrate 9 for mounting a semiconductor chip having a connection portion 12 (second connection portion) on one surface is prepared, and the semiconductor chip 8 with the film adhesive and the substrate 9 are aligned. I do. Next, using a bonding tool, the semiconductor chip 8 with the film-like adhesive is arranged from the film-like adhesive 1a side on the main surface of the substrate 9 provided with the connecting portions 10 (wiring, bumps, etc.) and heated. The semiconductor chip 8 with the film-like adhesive and the substrate 9 are joined together (see FIGS. 9(a) and 9(b)).
  • connection portion 5 of the semiconductor chip 8 with the film-like adhesive and the connection portion 10 of the base 9 are electrically connected, and the film-like adhesive 1a between the semiconductor chip A' and the base 9 is cured.
  • a sealing portion 1a' made of a material is formed, and the connecting portion 5 and the connecting portion 10 are sealed to obtain a semiconductor device 11 which is a bonded body of the semiconductor chip 8 with the film-like adhesive and the substrate 9.
  • FIG. The sealing portion 1a' has an upper portion 2a' containing the cured first adhesive and a lower portion 3a' containing the cured second adhesive.
  • the connecting portion 5 and the connecting portion 10 are soldered. By being joined, they are electrically and mechanically connected.
  • the heating in step (f) may be performed while placing the semiconductor chips, or may be performed after placing the semiconductor chips.
  • the heating and placing of step (f) may be thermocompression.
  • the step (f) includes a step of temporarily fixing after alignment (temporary fixing step), and a heat treatment to melt the bumps (for example, solder bumps) provided at the connecting portions to bond the semiconductor chip A' and the substrate. 9 and sealing the connecting portion (sealing step). Since it is not necessary to form a metallic bond during the temporary fixation step, the temporary fixation process can be carried out with low load, short time and low temperature. Therefore, when the temporary fixing step and the sealing step are performed in the step (f), it is possible to improve productivity and suppress deterioration of the connection portion.
  • the load applied for temporary fixation is appropriately set in consideration of the number of connection parts (bumps), absorption of height variations of the connection parts (bumps), control of the amount of deformation of the connection parts (bumps), etc.
  • the load is preferably 0.009N to 0.2N per connecting portion (eg, bump), for example.
  • Heating in the sealing process may be performed using a device capable of heating to a temperature above the melting point of the metal of the connection.
  • the heating temperature is preferably a temperature at which curing of the film-like adhesive proceeds, more preferably a temperature at which it is completely cured.
  • the heating temperature and heating time are appropriately set.
  • the heating time in the sealing process varies depending on the type of metal forming the connecting portion, but from the viewpoint of improving productivity, the shorter the time, the better.
  • the heating time is preferably 20 seconds or less, more preferably 10 seconds or less, and even more preferably 5 seconds or less.
  • the connection time is preferably 60 seconds or less.
  • the heating in the sealing step may be heating by thermocompression bonding.
  • the load (connection load) is set in consideration of the size of the connection member, the number of connection portions, variations in height, deformation amount of the connection portion due to pressure, and the like.
  • the connection load may be, for example, 1 MPa or less above atmospheric pressure. From the viewpoint of suppressing voids and improving connectivity, a larger load is preferable, and from the viewpoint of suppressing fillets, a smaller load is preferable. From these points of view, the load is preferably 0.05 to 0.5 MPa.
  • connection time varies depending on the type of metal forming the connecting portion, but from the viewpoint of improving productivity, the shorter the time, the better.
  • connection portion is a solder bump
  • the crimping time is preferably 20 seconds or less, more preferably 10 seconds or less, and even more preferably 5 seconds or less.
  • pressurization by air pressure is preferable from the viewpoint of making the fillet sufficiently effective.
  • the pressurization during heating is pressurization by atmospheric pressure (pressurization by a pressurized reflow furnace, a pressurized oven, or the like).
  • heat treatment may be performed in an oven or the like to further improve connection reliability.
  • Ominirad Phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide
  • IGM RESINS B.I. V. company trade name Omnirad 127: 2-hydroxy-1-(4-(4-(2-hydroxy-2-methylpropionyl)benzyl)phenyl)-2-methylpropan-1-one, IGM RESINS B. V.
  • Examples 1 to 7> (Preparation of first adhesive film) Among the components shown in Table 1, components other than the photopolymerization initiator are added to an organic solvent ( methyl ethyl ketone) to obtain a mixture. At this time, the amount of each component added was the amount shown in Table 1 (unit: part by mass). After that, ⁇ 1.0 mm beads and ⁇ 2.0 mm beads were added to the mixed solution, and the mixture was stirred for 30 minutes with a bead mill (planetary pulverizer P-7, Fritsch Japan Co., Ltd.). The amount of beads added was the same mass as the non-volatile content of the mixture (the total amount of components other than the organic solvent). After stirring, the beads were removed by filtration. Next, a photopolymerization initiator was added to the resulting mixture in an amount (unit: parts by mass) shown in Table 1, and mixed with stirring to obtain coating liquids 1A to 7A for forming the first adhesive layer. .
  • first adhesive films (first adhesive films 1A to 7A) respectively provided with first adhesive layers 1A to 7A were obtained.
  • the coating solution is applied onto a substrate film (trade name “Purex A54” manufactured by Teijin Dupont Films Co., Ltd.) so that the film thickness after drying is 4.5 ⁇ m. It was coated with a processing device (Kadoi Seiki). Then, the coating film was dried (80° C./10 min) in a clean oven (manufactured by ESPEC) to obtain a first adhesive film having a first adhesive layer.
  • the resulting coating liquid 1B is applied to a substrate film (trade name "Purex A54" manufactured by Teijin DuPont Films Japan Ltd.) so that the film thickness after drying is 4.5 ⁇ m. Kamui Seiki) was applied. Then, the coating film was dried (80° C./10 min) in a clean oven (manufactured by ESPEC) to obtain a second adhesive film 1B having a second adhesive layer 1B.
  • a second adhesive film 2B having a second adhesive layer 2B was obtained in the same manner, except that the coating liquid 2B was used instead of the coating liquid 1B.
  • connection structures (semiconductor devices) were produced in the following procedure. Moreover, using the obtained bonded structure, connection reliability (initial conductivity), fillet length, voids, and sealing performance were evaluated by the methods described below. Table 3 shows the results. In addition, "-" in the table indicates non-evaluation.
  • connection structure The film-like adhesives produced in Examples and Comparative Examples were cut into a predetermined size (length 8 mm ⁇ width 8 mm ⁇ thickness 9.0 ⁇ m) to prepare samples for evaluation. Next, a sample for evaluation was applied to a semiconductor chip with solder bumps (chip size: length 7.3 mm x width 7.3 mm x thickness 0.15 mm, bump height: copper pillar + solder total about 40 ⁇ m, number of bumps 328). It was attached to the surface (connecting surface) provided with bumps to obtain a laminate of the evaluation sample and the semiconductor chip with solder bumps.
  • the laminate obtained above was irradiated with light from the side of the evaluation sample to photocure the first adhesive layer.
  • the light irradiation was performed using a conveyor UV irradiation device CS60 (manufactured by GS YUASA).
  • the irradiation amount of light was 500 mJ/cm 2 in Examples 1, 3 and 6, and 250 mJ/cm 2 in Examples 2, 4, 5 and 7.
  • the above laminate laminate after light irradiation in the examples
  • a glass epoxy substrate glass epoxy substrate: 420 ⁇ m
  • thickness, copper wiring 9 ⁇ m thick
  • the mounting was performed under the conditions of a pressure bonding head temperature of 350° C., a pressure bonding time of 3 seconds, and a pressure bonding pressure of 0.5 MPa.
  • a connection structure semiconductor device was obtained in which the glass epoxy substrate and the semiconductor chip with solder bumps were daisy chain connected.
  • connection reliability (initial conductivity) was evaluated by measuring the connection resistance value of the connection structure obtained above using a multimeter (manufactured by ADVANTEST, product name "R6871E”). If the connection resistance value is 60.0 ⁇ or more and 80.0 ⁇ or less, it is "A”. If the connection resistance value is more than 80.0 ⁇ and 100 ⁇ or less, it is "B”. If the connection resistance value is more than 100 ⁇ , the connection resistance All the cases where the value was less than 60.0 ⁇ and the case where the resistance value was not displayed due to poor connection were rated as "C”. When the evaluation was B, it was determined that the connection reliability was sufficient, and when the evaluation was A, it was determined that the connection reliability was good.
  • the connection structure obtained above is observed from the semiconductor chip side using a digital microscope VHX-6000 (manufactured by Keyence), and the length of the adhesive (fillet) protruding from the four sides of the semiconductor chip is measured. bottom.
  • the length of the fillet on each side the maximum value of the shortest distance from the edge of the protruding adhesive to the semiconductor chip was adopted.
  • the fillet amount was evaluated by the average value of the fillet lengths measured on each of the four sides. When the average value was less than 100 ⁇ m, it was determined that the amount of fillets generated was sufficiently reduced. Numerical values in the table indicate average values of the fillet lengths.
  • void For the connection structure obtained above, an external image is taken with an ultrasonic imaging diagnostic device (trade name “Insight-300”, manufactured by Insight), and a scanner GT-9300UF (manufactured by EPSON, trade name) is used to take an image on the chip. An image of the adhesive layer (a layer made of a cured film adhesive for semiconductors) is captured, image processing software Adobe Photoshop (registered trademark) is used to identify voids by color correction and two-tone conversion, and a histogram is used. A ratio of the void portion was calculated. Taking the area of the adhesive part on the chip as 100%, the case where the void generation rate is 5% or less is "A”, the case of more than 5% and 10% or less is "B”, and the case of more than 10% is " It was evaluated as "C”.
  • connection structure obtained above was observed from the semiconductor chip side using a semiconductor/FPD inspection microscope MX63 (manufactured by OLYMPUS), and the length of the unfilled portion of the chip square was measured. As the length of the unfilled portion, the maximum value of the shortest distance from the chip square to the filled portion was adopted. Sealability was evaluated as "A” if the length of the unfilled portion was less than 500 ⁇ m, and as "B” if less than 1,000 ⁇ m.

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PCT/JP2022/038799 2021-10-29 2022-10-18 半導体用フィルム状接着剤、半導体用フィルム状接着剤の製造方法、接着剤テープ、半導体装置の製造方法及び半導体装置 Ceased WO2023074474A1 (ja)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294382A (ja) * 2007-04-27 2008-12-04 Sumitomo Bakelite Co Ltd 半導体ウエハーの接合方法および半導体装置の製造方法
JP2013058412A (ja) * 2011-09-08 2013-03-28 Sekisui Chem Co Ltd 絶縁材料、積層体、接続構造体、積層体の製造方法及び接続構造体の製造方法
WO2014021457A1 (ja) * 2012-08-03 2014-02-06 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
WO2019050006A1 (ja) * 2017-09-11 2019-03-14 日立化成株式会社 回路接続用接着剤フィルム及びその製造方法、回路接続構造体の製造方法、並びに、接着剤フィルム収容セット
WO2020100696A1 (ja) * 2018-11-12 2020-05-22 日立化成株式会社 半導体装置の製造方法及び半導体ウエハ加工用接着フィルム
WO2021251386A1 (ja) * 2020-06-11 2021-12-16 昭和電工マテリアルズ株式会社 回路接続用接着剤フィルム、並びに回路接続構造体及びその製造方法
WO2022009846A1 (ja) * 2020-07-07 2022-01-13 昭和電工マテリアルズ株式会社 回路接続用接着剤フィルム、並びに回路接続構造体及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022530581A (ja) * 2020-04-03 2022-06-30 ファルコ－ファルマ ゲーエムベーハー オキシブチニン含有組成物で満たされた注射器、その注射器の製造方法およびその注射器を含むキット

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294382A (ja) * 2007-04-27 2008-12-04 Sumitomo Bakelite Co Ltd 半導体ウエハーの接合方法および半導体装置の製造方法
JP2013058412A (ja) * 2011-09-08 2013-03-28 Sekisui Chem Co Ltd 絶縁材料、積層体、接続構造体、積層体の製造方法及び接続構造体の製造方法
WO2014021457A1 (ja) * 2012-08-03 2014-02-06 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
WO2019050006A1 (ja) * 2017-09-11 2019-03-14 日立化成株式会社 回路接続用接着剤フィルム及びその製造方法、回路接続構造体の製造方法、並びに、接着剤フィルム収容セット
WO2020100696A1 (ja) * 2018-11-12 2020-05-22 日立化成株式会社 半導体装置の製造方法及び半導体ウエハ加工用接着フィルム
WO2021251386A1 (ja) * 2020-06-11 2021-12-16 昭和電工マテリアルズ株式会社 回路接続用接着剤フィルム、並びに回路接続構造体及びその製造方法
WO2022009846A1 (ja) * 2020-07-07 2022-01-13 昭和電工マテリアルズ株式会社 回路接続用接着剤フィルム、並びに回路接続構造体及びその製造方法

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