WO2023051301A1 - 封装结构、封装方法及显示装置 - Google Patents

封装结构、封装方法及显示装置 Download PDF

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Publication number
WO2023051301A1
WO2023051301A1 PCT/CN2022/119609 CN2022119609W WO2023051301A1 WO 2023051301 A1 WO2023051301 A1 WO 2023051301A1 CN 2022119609 W CN2022119609 W CN 2022119609W WO 2023051301 A1 WO2023051301 A1 WO 2023051301A1
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Prior art keywords
layer
phase change
change material
heat
packaging
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PCT/CN2022/119609
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English (en)
French (fr)
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王劲
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Tcl科技集团股份有限公司
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Publication of WO2023051301A1 publication Critical patent/WO2023051301A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present application relates to the field of display technology, and in particular to a packaging structure, a packaging method and a display device.
  • Optoelectronic devices are semiconductor devices based on organic or inorganic materials, which have a wide range of applications in new energy, sensing, communication, display, lighting and other fields, such as solar cells, photodetectors, organic light-emitting diodes (Organic Light-Emitting Diode, OLED), quantum dot light-emitting diode (Quantum Dot Light Emitting Diodes, QLED), etc.
  • the functional layer materials in the photoelectric device structure are very sensitive to pollutants, water, oxygen, etc. in the atmosphere, and are easily eroded by the external environment without isolation protection, which seriously affects the service life of the photoelectric device. Therefore, optoelectronic devices have higher packaging requirements in practical applications to ensure that the devices have a longer service life.
  • TFE Thin-Film Encapsulation
  • the inorganic packaging layer is a water-oxygen barrier layer
  • the organic packaging layer is Planarization layer.
  • the inorganic encapsulation layer uses inorganic materials such as Al2O3, SiOx, and SiNx as the water and oxygen barrier layer
  • the organic encapsulation layer is a polymer film layer of acrylic resin monomer or epoxy resin monomer, which is suitable for large-scale and flexible device manufacturing.
  • thin-film packaging technology still faces many problems. For example, due to the characteristics of the material itself, the organic packaging layer has poor high temperature resistance and heat dissipation performance. Therefore, the existing thin-film packaging technology needs to be further developed.
  • the present application provides a packaging structure, a packaging method and a display device.
  • An embodiment of the present application provides a packaging structure, including: at least one organic packaging layer covering the optoelectronic device, the organic packaging layer is embedded with a heat dissipation part, and the heat dissipation part includes a phase change material layer.
  • the heat dissipation part further includes a first heat conduction layer, the first heat conduction layer is located on a side of the phase change material layer away from the optoelectronic device, and the first heat conduction layer is The thermal conductivity of the heat conducting layer is higher than that of the phase change material layer.
  • the heat dissipation part further includes a second heat conduction layer, the second heat conduction layer is located on a side of the phase change material layer close to the optoelectronic device, and the second heat conduction layer is The thermal conductivity of the thermal conduction layer is lower than that of the first thermal conduction layer, and the thermal conductivity of the second thermal conduction layer is higher than that of the phase change material layer.
  • the material of the first heat conducting layer is selected from one or more of metals, inorganic insulating materials, organic insulating materials and two-dimensional materials
  • the material of the second heat conducting layer One or more selected from metals, inorganic insulating materials, organic insulating materials and two-dimensional materials.
  • the thickness of the heat dissipation part is smaller than the thickness of the organic encapsulation layer, the thickness of the organic encapsulation layer is 15nm to 2mm, and the thickness of the first heat conducting layer is 5nm to 800nm , the thickness of the second heat conducting layer is 5nm to 800nm, and the thickness of the phase change material layer is 5nm to 1.9mm.
  • the phase change material layer has phase variability when the photoelectric device generates heat, and the phase change material of the phase change material layer is selected from solid-liquid phase change One or more of materials and solid-solid phase change materials.
  • the phase change material of the phase change material layer is selected from one or more of aliphatic hydrocarbons, fatty acids and polyols.
  • the aliphatic hydrocarbons are selected from linear alkane materials and their modified or composite materials
  • the fatty acids are selected from lauric acid materials, capric acid materials and their Modified or composite materials
  • the polyols include but not limited to pentaerythritol, trimethylolethane, neopentyl glycol, trishydroxymethylaminomethane and their composite materials.
  • the phase change temperature of the phase change material of the phase change material layer is lower than the working temperature of the optoelectronic device.
  • the orthographic projection of the heat dissipation part covers the orthographic projection of the optoelectronic device.
  • the encapsulation structure further includes at least one inorganic encapsulation layer, the inorganic encapsulation layer and the organic encapsulation layer are alternately laminated, and at least one organic encapsulation layer is laminated with the photoelectric device in direct contact.
  • the embodiment of the present application also provides a photoelectric device packaging method, including:
  • the heat dissipation part further includes a first heat conduction layer
  • the removing the mold and depositing the heat dissipation part in the original area of the mold includes: removing the mold, The phase-change material layer and the first heat-conducting layer are sequentially deposited in the area where the mold originally was located from bottom to top.
  • the thermal conductivity of the first thermal conduction layer is higher than the thermal conductivity of the phase change material layer.
  • the heat dissipation part further includes a second heat conduction layer
  • the removing the mold and depositing the heat dissipation part in the original area of the mold includes: removing the mold, The second heat conduction layer, the phase change material layer and the first heat conduction layer are sequentially deposited in the area where the mold originally was located from bottom to top.
  • the thermal conductivity of the second thermal conduction layer is lower than the thermal conductivity of the first thermal conduction layer, and the thermal conductivity of the second thermal conduction layer is higher than that of the phase change The thermal conductivity of the material layer.
  • the material of the first heat conducting layer is selected from one or more of metals, inorganic insulating materials, organic insulating materials and two-dimensional materials
  • the material of the second heat conducting layer One or more selected from metals, inorganic insulating materials, organic insulating materials and two-dimensional materials.
  • the phase change material of the phase change material layer is selected from one or more of aliphatic hydrocarbons, fatty acids and polyols.
  • the aliphatic hydrocarbons are selected from linear alkane materials and their modified or composite materials
  • the fatty acids are selected from lauric acid materials, capric acid materials and their Modified or composite materials
  • the polyols include but not limited to pentaerythritol, trimethylolethane, neopentyl glycol, trishydroxymethylaminomethane and their composite materials.
  • the embodiment of the present application also provides a display device, including a photoelectric device, and the above packaging structure, or including a photoelectric device, and a packaging structure prepared by the above method.
  • the organic encapsulation layer embedded with heat dissipation part is used in the encapsulation structure.
  • the phase change material layer in the heat dissipation part can undergo a phase change, thereby absorbing part of the heat generated by the encapsulated optoelectronic device during operation, and preventing the photoelectric device from being damaged. If the temperature is too high, it will affect the performance of the optoelectronic device; on the other hand, since the heat dissipation part is embedded in the organic encapsulation layer, it will not change the characteristics of the organic encapsulation material, and it can take into account the heat dissipation effect and the film quality of the organic encapsulation layer.
  • the heat dissipation part embedded in the organic packaging layer can block water and oxygen, which can improve the performance of organic packaging.
  • the water and oxygen barrier effect of the layer can block water and oxygen, which can improve the performance of organic packaging.
  • FIG. 1 is a schematic structural diagram of a first packaging structure provided in an embodiment of the present application
  • Fig. 2 is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application
  • FIG. 3 is a schematic structural diagram of a second package structure provided by an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a third package structure provided by an embodiment of the present application.
  • FIG. 5 is a schematic flow chart of a method for preparing a package structure provided in an embodiment of the present application.
  • FIG. 6 is a schematic diagram of a packaging structure during the manufacturing method of the packaging structure provided by the embodiment of the present application.
  • Embodiments of the present application provide a packaging structure, a packaging method, and a display device. Each will be described in detail below. It should be noted that the description sequence of the following embodiments is not intended to limit the preferred sequence of the embodiments. In addition, in the description of the present application, the term “including” means “including but not limited to”. Various embodiments of the present application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of the application; therefore, the described range should be regarded as The description has specifically disclosed all possible subranges as well as individual values within that range.
  • a description of a range from 1 to 6 should be considered to have specifically disclosed subranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and Single numbers within the stated ranges, eg 1, 2, 3, 4, 5 and 6, apply regardless of the range. Additionally, whenever a numerical range is indicated herein, it is meant to include any cited numeral (fractional or integral) within the indicated range.
  • one or more means one or more, and “multiple” means two or more.
  • “One or more”, “at least one of the following” or similar expressions refer to any combination of these items, including any combination of single or plural items.
  • “at least one (one) of a, b, or c”, or “at least one (one) of a, b, and c” can mean: a, b, c, a-b (that is, a and b), a-c, b-c, or a-b-c, where a, b, and c can be single or multiple.
  • the present application provides a packaging structure for packaging an optoelectronic device 20, the packaging structure includes: at least one organic encapsulation layer 30 covering the optoelectronic device 20, the organic encapsulation The layer 30 is embedded with a heat sink 40 .
  • the heat sink 40 is completely surrounded by the organic encapsulation layer 30 , and the heat sink 40 includes a phase change material layer 42 .
  • the thermal phase change material is a transparent organic material with heat conduction properties.
  • the thermal phase change material generally absorbs heat in a solid-solid or solid-liquid phase transition and dissipates heat in a reverse phase transition.
  • the organic encapsulation layer 30 embedded with a heat dissipation part is used for the encapsulation structure.
  • the phase change material layer 42 in the heat dissipation part can undergo a phase change to absorb part of the heat generated by the encapsulated optoelectronic device 20 when it is in operation.
  • the heat of the phase change material layer 42 will be released slowly, which prolongs the heat dissipation time and prevents the temperature of the photoelectric device 20 from being too high and affecting performance of the optoelectronic device 20; on the other hand, since the heat dissipation part 40 is embedded in the organic encapsulation layer 30, the characteristics of the organic encapsulation material will not be changed, and the heat dissipation effect and the film-forming quality of the organic encapsulation layer 30 can be taken into account without affecting Its characteristics as a planarization layer will not adversely affect the process of the organic encapsulation layer 30 and the light output of the optoelectronic device 20; in addition, the heat dissipation part 40 embedded in the organic encapsulation layer 30 can block water and oxygen, and can Improve the water and oxygen barrier effect of the organic encapsulation layer 30 .
  • the phase change material layer 42 has phase variability when the photoelectric device 20 generates heat, and the phase change material of the phase change material layer 42 is selected from solid-liquid phase change materials and solid-liquid phase change materials.
  • One or more of solid phase change materials, solid-liquid phase change materials or solid-solid phase change materials may be selected from one or more of aliphatic hydrocarbons, fatty acids and polyols.
  • Aliphatic hydrocarbon materials include but not limited to straight chain alkane materials and their modified or composite materials
  • fatty acid materials include but not limited to lauric acid materials
  • polyol materials include But not limited to pentaerythritol, trimethylolethane, neopentyl glycol, trishydroxymethylaminomethane, etc. and their composite materials.
  • the material of the organic encapsulation layer 30 includes, but is not limited to, high molecular polymers such as epoxy resin, phenolic resin, urea-formaldehyde resin, and polymethyl methacrylate.
  • the optoelectronic device 20 is disposed on the substrate 10, and the optoelectronic device 20 is specifically a quantum dot light-emitting diode device.
  • FIG. 2 shows a quantum dot with an inverted structure
  • the quantum dot light emitting diode device 20 includes: a cathode 21 disposed on the substrate 10, an electron transport layer 22 disposed on the cathode 21, an electron transport layer 22 disposed on the electron transport layer 22 The quantum dot light emitting layer 23 on the quantum dot light emitting layer 23, the hole transport layer 24 on the quantum dot light emitting layer 23, the hole injection layer 25 on the hole transport layer 24 and the hole injection layer on the Anode 26 on 25.
  • each functional layer in this embodiment can adopt common materials in the field.
  • the substrate 10 can be, for example, a glass substrate;
  • the material of the cathode 21 can be, for example, indium tin oxide (ITO);
  • the electron transport layer 22 can be, for example, a zinc oxide film;
  • the material is a quantum dot material;
  • the material of the hole transport layer 24 can be, for example, TAPC/HAT-CN;
  • the material of the hole injection layer 25 can be, for example, molybdenum trioxide (MoO 3 );
  • the material of the anode 26 It may be, for example, silver (Ag).
  • the heat dissipation part 40 further includes a first heat conduction layer 43 , and the first heat conduction layer 43 is located on a side of the phase change material layer 42 away from the optoelectronic device 20 , The thermal conductivity of the first heat conducting layer 43 is higher than that of the phase change material layer 42 .
  • the thermal conductivity of the first heat conduction layer 43 is higher than that of the phase change material layer 42 .
  • the heat generated by the photoelectric device 20 can be oriented to dissipate the heat away from the photoelectric device 20 through the phase change material layer 42 - the first heat conducting layer 43 .
  • the heat released by the phase change of the phase change material will also preferentially dissipate heat away from the photoelectric device 20 through the first heat conducting layer 43, thereby protecting Optoelectronic device 20.
  • the phase change material layer 42 is close to the side of the optoelectronic device 20, the thermal conductivity of the second thermal conduction layer 41 is lower than the thermal conductivity of the first thermal conduction layer 43, and the first thermal conduction layer 43 and the second The thermal conductivity of the thermal conduction layer 41 is higher than that of the thermal phase change material layer 42 .
  • the thermal conductivity of the first heat conduction layer 43 is higher than that of the second heat conduction layer 41, and the Both the thermal conductivity of the first thermal conduction layer 43 and the second thermal conduction layer 41 are higher than that of the thermal phase change material layer 42 .
  • the thermal phase change material absorbs the heat generated by the device through phase change to avoid excessive temperature of the device; when the heat generated by the photoelectric device 20 continues to be higher than When the phase change temperature of the thermal phase change material is high, since the thermal phase change material also has the performance of heat conduction, the heat generated by the photoelectric device 20 can be oriented away from the heat through the second heat conduction layer 41-phase change material layer 42-first heat conduction layer 43 The photoelectric device 20 dissipates heat in one direction.
  • the photoelectric device 20 When the photoelectric device 20 is not working or the heat generated is continuously lower than the phase transition temperature of the thermal phase change material, the heat released by the phase change material in the form of reverse phase transition will dissipate heat away from the photoelectric device 20 through the first heat conducting layer 43, Therefore, the photoelectric device 20 is protected, and the heat dissipation effect of the photoelectric device 20 is significantly improved.
  • thermal conductivity in this application has a known meaning in the art, which can be understood as “thermal conductivity” or “thermal conductivity”, which means that under stable heat transfer conditions, a material with a thickness of 1m, two sides The temperature difference on the surface is 1 degree (K, °C), and the heat transferred through an area of 1 square meter within a certain period of time, the unit is W/(m ⁇ degree) or W/(m ⁇ K).
  • the thermal conductivity of materials in this application can be the thermal conductivity of known materials recognized in the art, or measured according to methods such as ASTM D5470 or ISO22007-2:2015, as long as the thermal conductivity measured by any method is within the scope defined in this application All can be used to realize the purpose of this application.
  • the material of the first heat conduction layer 43 and the material of the second heat conduction layer 41 are each independently selected from one or more of metals, inorganic insulating materials, organic insulating materials and two-dimensional materials. That is, the material of the first heat conducting layer 43 is selected from one or more of metals, inorganic insulating materials, organic insulating materials and two-dimensional materials, and the material of the second heat conducting layer 41 is selected from metals, inorganic insulating materials, organic insulating materials One or more of materials and two-dimensional materials.
  • Metal materials include but not limited to silver (Ag), gold (Au), copper (Cu), aluminum (Al), etc.
  • Inorganic insulating materials include but not limited to alumina, silicon nitride, aluminum nitride, etc.
  • Organic insulating materials include But not limited to silica gel, two-dimensional materials include graphene, boron nitride, etc.
  • the thermal conductivity of the material of the first thermal conduction layer 43 is higher than the thermal conductivity of the material of the second thermal conduction layer 41 .
  • the material of the first heat conduction layer 43 is graphene
  • the material of the second heat conduction layer 41 is heat conduction silica gel
  • both of graphene and silica gel have good light transmittance
  • Graphene has a higher thermal conductivity than silica gel.
  • the material of the first thermal conduction layer 43 is silver with a thickness of 25nm
  • the material of the second thermal conduction layer 41 is silver with a thickness of 5nm. In addition to performance, it also has good light transmittance.
  • the thickness of the heat dissipation part is smaller than the thickness of the organic encapsulation layer 30 , and in some embodiments, the thickness of the organic encapsulation layer 30 is 15 nm (nanometer) to 2 mm (micrometer).
  • the thickness of the first heat conduction layer 43 is 5nm to 800nm. If the first heat conduction layer 43 is too thin, the overall heat conduction performance of the heat dissipation part will be reduced. If the first heat conduction layer 43 is too If it is thick, it will affect the light transmittance. It can be understood that the thickness of the first heat conducting layer 43 can be any value within the range of 5nm to 800nm, for example: 5nm, 10nm, 20nm, 50nm, 100nm, 200nm, 500nm, 700nm, 800nm or between 5nm and 800nm Other values not listed in between.
  • the thickness of the second heat conduction layer 41 is 5nm to 800nm. If the second heat conduction layer 41 is too thin, the overall heat conduction performance of the heat sink will be reduced. If the second heat conduction layer 41 is too thin If it is thick, it will affect the light transmittance. It can be understood that the thickness of the second heat conducting layer 41 can be any value within the range of 5nm to 800nm, for example: 5nm, 10nm, 20nm, 50nm, 100nm, 200nm, 500nm, 700nm, 800nm or between 5nm and 800nm Other values not listed in between.
  • the thickness of the phase-change material layer 42 is 5nm to 1.9mm, and the thermal phase-change material layer is an organic transparent film layer, which has good thermal conductivity and light transmittance. If the phase-change material layer If 42 is too thin, the heat dissipation effect of the heat dissipation part will be affected. If the phase change material layer 42 is too thick, the effect of the organic encapsulation layer 30 as a planarization layer will be affected, and the preparation difficulty of embedding the heat dissipation part into the organic encapsulation layer 30 will be increased. .
  • the thickness of the phase change material layer 42 can be any value within the range of 5nm to 1.9mm, for example: 5nm, 10nm, 20nm, 50nm, 100nm, 200nm, 500nm, 700nm, 1mm, 1.2mm, 1.5 mm, 1.7mm, 1.9mm or other unlisted values between 5nm and 1.9mm.
  • the phase change temperature of the phase change material is lower than the working temperature of the optoelectronic device 20 .
  • the orthographic projection of the photoelectric device 20 (for example, the orthographic projection on the substrate 10, the photoelectric device 20 is arranged on the substrate 10) is located at the front of the orthographic projection of the heat dissipation part.
  • the orthographic projection of the heat dissipation part completely covers the orthographic projection of the optoelectronic device 20 .
  • the encapsulation structure further includes one or more layers of inorganic encapsulation layer 50, when the inorganic encapsulation layer 50 is a single layer, as shown in Figure 1 As shown, the inorganic encapsulation layer 50 is located on the side of the organic encapsulation layer 30 away from the optoelectronic device 20.
  • the inorganic encapsulation layer 50 is multi-layered, the inorganic encapsulation layer 50 and the organic encapsulation layer 30 Alternately stacked, and at least one organic encapsulation layer 30 is in direct contact with the optoelectronic device 20 .
  • the heat dissipation part is disposed in the organic encapsulation layer 30 that is in direct contact with the optoelectronic device 20 . Direct contact, so the heat dissipation part has a good heat dissipation effect.
  • the heat dissipation part is arranged in the organic encapsulation layer 30 which is not in direct contact with the optoelectronic device 20. Since the heat can be transferred to the heat dissipation part through the inorganic encapsulation layer 50 for heat dissipation, the heat dissipation part can still play a role. cooling effect.
  • the material of the inorganic encapsulation layer 50 includes, but is not limited to, non-metal oxides such as silicon oxide, aluminum oxide, titanium oxide, zirconium oxide, silicon nitride, aluminum nitride, boron nitride, titanium nitride, silver, magnesium, copper, or aluminum. compounds, metal oxides, nitrides and metallic materials.
  • the embodiment of the present application also provides a packaging method, including:
  • the mold 60 is removed, and the heat dissipation part 40 is deposited in the area where the mold 60 was originally located, wherein the heat dissipation part 40 includes a phase change material layer 42 .
  • the phase change material layer 42 has a phase change when the photovoltaic device 20 generates heat.
  • the mold 60 is removed by photolithography, chemical etching or physical etching.
  • the heat dissipation part 40 further includes a first heat conduction layer 43, the removal of the mold 60, and the heat dissipation part 40 is deposited in the original area of the mold 60, including:
  • the mold 60 is removed, and the phase-change material layer 42 and the first heat-conducting layer 43 are sequentially deposited from bottom to top in the area where the mold 60 was originally located;
  • the heat dissipation part 40 further includes a second heat conduction layer 41, and removing the mold 60 and depositing the heat dissipation part 40 in the original area of the mold 60 includes: removing the mold 60, The area where the mold 60 is originally located is deposited in sequence from the bottom to the top with the second heat conduction layer 41 , the phase change material layer 42 and the first heat conduction layer 43 .
  • the methods for depositing each film layer on the photoelectric device 20 can be realized by methods known in the art, such as chemical methods and physical methods, wherein chemical methods include: chemical vapor deposition, continuous ion layer adsorption and reaction method, anodic oxidation method, electrolytic deposition method, co-precipitation method.
  • Physical methods include physical coating methods and solution processing methods. Specific physical coating methods include: thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method, atomic layer deposition method, pulsed laser deposition method, etc.
  • Solution processing methods include spin coating method, printing method, inkjet printing method, blade coating method, printing method, dipping method, soaking method, spraying method, roller coating method, casting method, slit coating method, strip coating method coating method.
  • the organic encapsulation layer 30 is prepared by the inkjet printing method in the solution method, and the inkjet printing method mainly uses inkjet printing equipment to prepare the organic encapsulation layer 30.
  • This method mainly uses The solution of the organic packaging material is filtered and installed in the ink cartridge of the inkjet printing device. After adjusting the printing voltage, air pressure, waveform and other parameters, the alignment mark drops the ink in the predetermined area to form the organic packaging layer 30 .
  • each functional layer is prepared by an inkjet printing method, which can greatly reduce the production cost and be used for mass production.
  • the organic encapsulation layer 30 is prepared by the spin-coating method in the solution method.
  • the preparation of the organic encapsulation layer 30 by the spin-coating method needs to prepare the organic encapsulation material solution first. , place the sheet to be spin-coated on a spin-coater, drop the prepared organic encapsulation solution onto the spin-coater, perform spin-coating at a preset speed, and complete the preparation of the organic encapsulation layer 30 after heat treatment.
  • the spin coating method has the characteristics of mild process conditions, simple operation, energy saving and environmental protection, etc.
  • the photoelectric device 20 prepared by it has the advantages of high carrier mobility and precise thickness.
  • the solution method is a commonly used method for depositing film layers in the field.
  • the heat dissipation part is embedded in the organic encapsulation layer 30.
  • the organic encapsulation layer is formed three times, and the heat dissipation part is prepared separately. Therefore The properties of the organic encapsulation layer material will not be changed, and the mixing of the phase change material and the material of the organic encapsulation layer 30 will avoid the change of the solution viscosity of the organic encapsulation material and affect the feasibility of the solution process.
  • the present application also provides a display device, which includes a photoelectric device 20, and the package structure described in the above embodiments, or includes a photoelectric device 20, and a package prepared by the method described in the above embodiments structure, its structure, implementation principle and effect are similar, and will not be repeated here.
  • the display device may be: a lighting fixture and a backlight, or any product or component with a display function such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, and a navigator.

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  • Computer Hardware Design (AREA)
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Abstract

本申请公开了一种封装结构，包括：覆盖在光电器件（20）上的至少一有机封装层（30），有机封装层（30）内嵌有散热部（40），散热部（40）包括相变材料层（42）。散热部中的相变材料层可以通过发生相变，从而吸收被封装的光电器件工作时产生的部分热量，防止光电器件的温度过高，影响光电器件的性能。

Description

封装结构、封装方法及显示装置
本申请要求于2021年09月28日在中国专利局提交的、申请号为202111142964.6、申请名称为“封装结构、封装方法及显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，尤其涉及一种封装结构、封装方法及显示装置。
 背景技术
光电器件是基于有机或无机材料的半导体器件，在新能源、传感、通信、显示、照明等领域具有广泛的应用，例如太阳能电池、光电探测器、有机发光二极管（OrganicLight-Emitting Diode，OLED）、量子点发光二极管（Quantum Dot Light Emitting Diodes，QLED）等。光电器件结构中的功能层材料对于大气中的污染物、水、氧等十分敏感，在无隔绝保护的情况下易受到外界环境的侵蚀，严重影响光电器件的使用寿命。因此，光电器件在实际应用中有较高的封装要求，以保证器件具有较长的使用寿命。
薄膜封装(Thin-Film Encapsulation, TFE)是目前光电器件的主流封装技术之一，其封装结构由无机封装层和有机封装层交叠重复组成，无机封装层为水氧阻隔层，有机封装层为平坦化层。其中，无机封装层采用Al2O3、SiOx、SiNx等无机材料作为水氧阻隔层，有机封装层为丙烯酸树酯单体或环氧树脂单体的聚合物薄膜层，适合大尺寸和柔性器件制造。
 技术问题
但薄膜封装技术仍面临诸多问题，如有机封装层由于材料本身特性，其耐高温和散热性能较差，因此，现有薄膜封装技术需要进一步发展。
 技术解决方案
因此，本申请提供一种封装结构、封装方法及显示装置。
本申请实施例提供一种封装结构，包括：覆盖在所述光电器件上的至少一有机封装层，所述有机封装层内嵌有散热部，所述散热部包括相变材料层。
可选的，在本申请的一些实施例中，所述散热部还包括第一导热层，所述第一导热层位于所述相变材料层远离所述光电器件的一侧，所述第一导热层的导热率高于所述相变材料层的导热率。
可选的，在本申请的一些实施例中，所述散热部还包括第二导热层，所述第二导热层位于所述相变材料层靠近所述光电器件的一侧，所述第二导热层的导热率低于所述第一导热层的导热率，且所述第二导热层的导热率高于所述相变材料层的导热率。
可选的，在本申请的一些实施例中，所述第一导热层材料选自金属、无机绝缘材料、有机绝缘材料及二维材料中的一种或多种，所述第二导热层材料选自金属、无机绝缘材料、有机绝缘材料及二维材料中的一种或多种。
可选的，在本申请的一些实施例中，所述散热部厚度小于所述有机封装层厚度，所述有机封装层的厚度为15nm至2mm，所述第一导热层的厚度为5nm至800nm，所述第二导热层的厚度为5nm至800nm，所述相变材料层的厚度为5nm至1.9mm。
可选的，在本申请的一些实施例中，所述相变材料层在所述光电器件产生热量时具有相的可变性，所述相变材料层的相变材料选自固-液相变材料及固-固相变材料中的一种或多种。
可选的，在本申请的一些实施例中，所述相变材料层的相变材料选自脂肪烃类、脂肪酸类及多元醇类中的一种或多种。
可选的，在本申请的一些实施例中，所述脂肪烃类选自直链烷烃类材料及其改性或复合材料，所述脂肪酸类选自月桂酸类材料、癸酸类材料及其改性或复合材料，所述多元醇类包括但不限于季戊四醇、三羟甲基乙烷、新戊二醇、三羟甲基氨基甲烷及其复合材料。
可选的，在本申请的一些实施例中，所述相变材料层的相变材料的相变温度低于所述光电器件的工作温度。
可选的，在本申请的一些实施例中，所述散热部的正投影覆盖所述光电器件的正投影。
可选的，在本申请的一些实施例中，所述封装结构还包括至少一无机封装层，所述无机封装层与所述有机封装层交替层叠设置，且至少有一有机封装层与所述光电器件直接接触。
相应的，本申请实施例还提供一种光电器件封装方法，包括：
在待封装的光电器件上第一次沉积有机封装层；在第一次沉积的有机封装层上一区域设置模具，围绕所述模具所在的区域，在第一次沉积的有机封装层上继续第二次沉积有机封装层；去掉所述模具，在所述模具原所在的区域沉积散热部；以及在第二次沉积的有机封装层和所述散热部上方继续第三次沉积有机封装层，得到内嵌有所述散热部的有机封装层；其中，所述散热部包括相变材料层。
可选的，在本申请的一些实施例中，所述散热部还包括第一导热层，所述去掉所述模具，在所述模具原所在的区域沉积散热部，包括：去掉所述模具，在所述模具原所在的区域由下至上依次沉积所述相变材料层及第一导热层。
可选的，在本申请的一些实施例中，所述第一导热层的导热率高于所述相变材料层的导热率。
可选的，在本申请的一些实施例中，所述散热部还包括第二导热层，所述去掉所述模具，在所述模具原所在的区域沉积散热部，包括：去掉所述模具，在所述模具原所在的区域由下至上依次沉积所述第二导热层、相变材料层及第一导热层。
可选的，在本申请的一些实施例中，所述第二导热层的导热率低于所述第一导热层的导热率，且所述第二导热层的导热率高于所述相变材料层的导热率。
可选的，在本申请的一些实施例中，所述第一导热层材料选自金属、无机绝缘材料、有机绝缘材料及二维材料中的一种或多种，所述第二导热层材料选自金属、无机绝缘材料、有机绝缘材料及二维材料中的一种或多种。
可选的，在本申请的一些实施例中，所述相变材料层的相变材料选自脂肪烃类、脂肪酸类及多元醇类中的一种或多种。
可选的，在本申请的一些实施例中，所述脂肪烃类选自直链烷烃类材料及其改性或复合材料，所述脂肪酸类选自月桂酸类材料、癸酸类材料及其改性或复合材料，所述多元醇类包括但不限于季戊四醇、三羟甲基乙烷、新戊二醇、三羟甲基氨基甲烷及其复合材料。
相应的，本申请实施例还提供一种显示装置，包括光电器件，以及上述的封装结构，或者包括光电器件，以及由上述的方法制备的封装结构。
 有益效果
本申请将内嵌有散热部的有机封装层用于封装结构，该散热部中的相变材料层可以通过发生相变，从而吸收被封装的光电器件工作时产生的部分热量，防止光电器件的温度过高，影响光电器件的性能；另一方面，由于散热部以内嵌方式设置在有机封装层内，不会改变有机封装材料的特性，可兼顾散热效果和有机封装层的成膜质量，不影响其作为平坦化层的特性，且不会给有机封装层的制程和光电器件的出光带来不利的影响；此外，内嵌在有机封装层中的散热部可以阻隔水氧，可提高有机封装层的水氧阻隔效果。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请实施例提供的第一种封装结构的结构示意图；
图2是本申请实施例提供的光电器件的结构示意图；
图3是本申请实施例提供的第二种封装结构的结构示意图；
图4是本申请实施例提供的第三种封装结构的结构示意图；
图5是本申请实施例提供的封装结构的制备方法的流程示意图；
图6是本申请实施例提供的封装结构的制备方法过程中的封装结构的示意图。
本申请的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本申请保护的范围。
本申请实施例提供一种封装结构、封装方法及显示装置。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。另外，在本申请的描述中，术语“包括”是指“包括但不限于”。本申请的各种实施例可以以一个范围的型式存在；应当理解，以一范围型式的描述仅仅是因为方便及简洁，不应理解为对本申请范围的硬性限制；因此，应当认为所述的范围描述已经具体公开所有可能的子范围以及该范围内的单一数值。例如，应当认为从1到6的范围描述已经具体公开子范围，例如从1到3，从1到4，从1到5，从2到4，从2到6，从3到6等，以及所述范围内的单一数字，例如1、2、3、4、5及6，此不管范围为何皆适用。另外，每当在本文中指出数值范围，是指包括所指范围内的任何引用的数字(分数或整数)。
在本申请中，“和/或”，描述关联对象的关联关系，表示可以存在三种关系，例如，A和/或B，可以表示：单独存在A，同时存在A和B，单独存在B的情况。其中A，B可以是单数或者复数。
在本申请中，“一个或多个”是指一个或者多个，“多个”是指两个或两个以上。“一种或多种”、“以下至少一项(个)”或其类似表达，是指的这些项中的任意组合，包括单项（个）或复数项（个）的任意组合。例如，“ a,b,或c中的至少一项（个）”，或，“a,b,和c中的至少一项（个）”，均可以表示：a, b, c, a-b（即a和b）, a-c, b-c, 或a-b-c，其中a,b,c分别可以是单个，也可以是多个。
首先，请参阅图1至图4，本申请提供一种封装结构，用于封装光电器件20，该封装结构包括：覆盖在所述光电器件20上的至少一有机封装层30，所述有机封装层30内嵌有散热部40，在一些实施例中，如图1所示，所述散热部40的四周被所述有机封装层30完全包围，所述散热部40包括相变材料层42。
针对本实施例，热相变材料为透明的有机材料，且具有热传导的性能，热相变材料一般以固-固或固-液相变方式吸收热量，并以逆相变方式散热。
本申请将内嵌有散热部的有机封装层30用于封装结构，该散热部中的相变材料层42可以通过发生相变，从而吸收被封装的光电器件20工作时产生的部分热量，当光电器件20不工作或产生的热量持续低于热相变材料的相变温度时，相变材料层42的热量将会缓慢的释放，延长了散热时间，防止光电器件20的温度过高，影响光电器件20的性能；另一方面，由于散热部40以内嵌方式设置在有机封装层30内，不会改变有机封装材料的特性，可兼顾散热效果和有机封装层30的成膜质量，不影响其作为平坦化层的特性，且不会给有机封装层30的制程和光电器件20的出光带来不利的影响；此外，内嵌在有机封装层30中的散热部40可以阻隔水氧，可提高有机封装层30的水氧阻隔效果。
在一些实施例中，所述相变材料层42在所述光电器件20产生热量时具有相的可变性，所述相变材料层42的相变材料选自固-液相变材料及固-固相变材料中的一种或多种，固-液相变材料或固-固相变材料可以选自脂肪烃类、脂肪酸类及多元醇类中的一种或多种。脂肪烃类材料包括但不限于直链烷烃类材料及其改性或复合材料，脂肪酸类材料包括但不限于月桂酸类材料、癸酸类材料及其改性或复合材料，多元醇类材料包括但不限于季戊四醇、三羟甲基乙烷、新戊二醇、三羟甲基氨基甲烷等及其复合材料。
在一些实施例中，所述有机封装层30材料包括但不限于环氧树脂、酚醛树脂、脲醛树脂和聚甲基丙烯酸甲酯等高分子聚合物。
在本申请一些实施例中，所述光电器件20设于衬底10上，所述光电器件20具体为量子点发光二极管器件，请参阅图2，图2示出了一种倒置结构的量子点发光二极管器件的结构示意图，所述量子点发光二极管器件20包括：设在所述衬底10上的阴极21、设在所述阴极21上的电子传输层22、设在所述电子传输层22上的量子点发光层23、设在所述量子点发光层23上的空穴传输层24、设在所述空穴传输层24上的空穴注入层25和设在所述空穴注入层25上的阳极26。
本实施例中各个功能层的材料可以采用本领域常见的材料。例如，所述衬底10可以例如为玻璃基板；所述阴极21的材料可以例如为氧化铟锡（ITO）；所述电子传输层22可以例如为氧化锌膜；所述量子点发光层23的材料为量子点材料；所述空穴传输层24的材料可以例如为TAPC/HAT-CN；所述空穴注入层25的材料可以例如为三氧化钼（MoO 3）；所述阳极26的材料可以例如为银（Ag）。
在一些实施例中，如图3所示，所述散热部40还包括第一导热层43，所述第一导热层43位于所述相变材料层42远离所述光电器件20的一侧，所述第一导热层43的导热率高于所述相变材料层42的导热率。
通过将所述相变材料层42远离所述光电器件20的一侧设置第一导热层43，由于所述第一导热层43的导热率高于所述相变材料层42的导热率。当光电器件20工作产生的热量高于热相变材料的相变温度时，光电器件20产生热量可经相变材料层42-第一导热层43定向将热量向远离光电器件20方向散热。当光电器件20不工作或产生的热量持续低于热相变材料的相变温度时，相变材料相变释放的热量同样会优先通过第一导热层43向远离光电器件20方向散热，从而保护光电器件20。
为了获得更好的散热效果，在上述实施例的基础上，在一些实施例中，如图4所示，所述散热部40还包括第二导热层41，所述第二导热层41位于所述相变材料层42靠近所述光电器件20的一侧，所述第二导热层41的导热率低于所述第一导热层43的导热率，且所述第一导热层43和第二导热层41的导热率均高于所述热相变材料层42。
通过将散热部由下至上设置为第二导热层41-相变材料层42-第一导热层43的结构，第一导热层43的导热率高于第二导热层41导热率，且所述第一导热层43和第二导热层41的导热率均高于所述热相变材料层42。当光电器件20工作产生的热量高于热相变材料的相变温度时，热相变材料通过相变来吸收器件产生的热量，避免器件温度过高；当光电器件20产生的热量持续高于热相变材料的相变温度时，由于热相变材料还具有导热的性能，光电器件20产生热量可经第二导热层41-相变材料层42-第一导热层43定向将热量向远离光电器件20方向散热。当光电器件20不工作或产生的热量持续低于热相变材料的相变温度时，相变材料通过逆相变的形式释放的热量并通过第一导热层43向远离光电器件20方向散热，从而保护光电器件20，显著提升光电器件20的散热效果。
需要说明的是，本申请中“导热率”具有本领域已知的含义，可以理解为“导热系数”或“热导率”，是指在稳定传热条件下，1m厚的材料，两侧表面的温差为1度（K，℃），在一定时间内，通过1平方米面积传递的热量，单位为瓦/（米·度）或W/(m·K)。本申请中材料的导热率可以是本领域公认的已知材料的导热率，或者根据ASTM D5470或ISO22007-2:2015等方法进行测定，只要任一方法测定的导热率在本申请所限定的范围内，均可用于实现本申请的目的。
在一些实施例中，所述第一导热层43材料和所述第二导热层41材料各自独立的选自金属、无机绝缘材料、有机绝缘材料及二维材料中的一种或多种。即所述第一导热层43材料选自金属、无机绝缘材料、有机绝缘材料及二维材料中的一种或多种，所述第二导热层41材料选自金属、无机绝缘材料、有机绝缘材料及二维材料中的一种或多种。金属材料包括但不限于银（Ag）、金（Au）、铜（Cu）、铝（Al）等，无机绝缘材料包括但不限于氧化铝、氮化硅、氮化铝等，有机绝缘材料包括但不限于硅胶，二维材料包括石墨烯、氮化硼等。
其中，所述第一导热层43材料的导热率高于所述第二导热层41材料的导热率。
例如：在本申请一实施例中，当所述第一导热层43材料为石墨烯时，所述第二导热层41的材料为导热硅胶，石墨烯和硅胶的均具有良好的透光率且石墨烯的导热系数大于硅胶。
在本申请另一实施例中，当所述第一导热层43材料为25nm厚的银时，所述第二导热层41的材料为5nm厚的银，银在较薄条件下除优异的导热性能外还具有良好的透光率。
在本申请实施例中，所述散热部厚度小于所述有机封装层30厚度，在一些实施例中，所述有机封装层30的厚度为15nm（纳米）至2mm（微米）。
在一些实施例中，所述第一导热层43的厚度为5nm至800nm，若所述第一导热层43过薄，则会降低散热部整体的热传导性能，若所述第一导热层43过厚，则会影响到透光性。可以理解的是，所述第一导热层43的厚度可以在 5nm至800nm范围内任意取值，例如：5nm、10nm、20nm、50nm、100nm、200nm、500nm、700nm、800nm或在5nm至800nm之间的其他未列出的数值。
在一些实施例中，所述第二导热层41的厚度为5nm至800nm，若所述第二导热层41过薄，则会降低散热部整体的热传导性能，若所述第二导热层41过厚，则会影响到透光性。可以理解的是，所述第二导热层41的厚度可以在5nm至800nm 范围内任意取值，例如：5nm、10nm、20nm、50nm、100nm、200nm、500nm、700nm、800nm或在5nm至800nm之间的其他未列出的数值。
在一些实施例中，所述相变材料层42的厚度为5nm至1.9mm，热相变材料层为有机透明薄膜层，具有较好的热传导性能和透光率，若所述相变材料层42过薄，则影响散热部散热效果，若所述相变材料层42过厚，则影响有机封装层30作为平坦化层的效果，并提高将散热部内嵌到有机封装层30的制备难度。可以理解的是，所述相变材料层42的厚度可以在5nm至1.9mm范围内任意取值，例如：5nm、10nm、20nm、50nm、100nm、200nm、500nm、700nm、1mm、1.2mm、1.5mm、1.7mm、1.9mm或在5nm至1.9mm之间的其他未列出的数值。
为了防止器件开始工作时温度骤然上升，影响器件的性能，在一实施例中，所述相变材料的相变温度低于所述光电器件20的工作温度。
为了获得更好的散热效果，所述光电器件20的正投影（例如在衬底10上的正投影，所述光电器件20设在所述衬底10上）位于所述散热部的正投影的范围内，在一些实施例中，所述散热部的正投影完全覆盖所述光电器件20的正投影。
为了加强封装结构的阻隔水氧的能力，在一些实施例中，所述封装结构还包括一层或多层的无机封装层50，当所述无机封装层50为单层时，如图1所示，所述无机封装层50位于所述有机封装层30远离所述光电器件20的一侧，当所述无机封装层50为多层时，所述无机封装层50与所述有机封装层30交替层叠设置，且至少有一有机封装层30与所述光电器件20直接接触。
当所述无机封装层50与所述有机封装层30交替层叠设置时，在一些实施例中，散热部设置在与所述光电器件20直接接触的有机封装层30之中，由于与光电器件20直接接触，因此散热部具有良好的散热效果。在另一些实施例中，散热部设置在不与所述光电器件20直接接触的有机封装层30之中，由于热量可以经无机封装层50传递至散热部进行散热，因此散热部依旧可以起到散热的效果。
所述无机封装层50材料包括但不限于氧化硅、氧化铝、氧化钛、氧化锆、氮化硅、氮化铝、氮化硼、氮化钛、银、镁、铜或铝等非金属氧化物、金属氧化物、氮化物和金属材料。
如图5和图6所示，本申请实施例还提供一种封装方法，包括：
S10. 在待封装的光电器件20上第一次沉积有机封装层。
S20. 在第一次沉积的有机封装层上一区域设置模具60，围绕所述模具60所在的区域，在第一次沉积的有机封装层上继续第二次沉积有机封装层。
S30. 去掉所述模具60，在所述模具60原所在的区域沉积散热部40，其中，所述散热部40包括相变材料层42。
在一些实施例中，所述相变材料层42在所述光电器件20产生热量时具有相的可变性。
在一些实施例中，所述模具60通过光刻、化学刻蚀或物理刻蚀法去除。
在一些实施例中，所述散热部40还包括第一导热层43，所述去掉所述模具60，在所述模具60原所在的区域沉积散热部40，包括：
去掉所述模具60，在所述模具60原所在的区域由下至上依次沉积相变材料层42及第一导热层43；
在一些实施例中，所述散热部40还包括第二导热层41，所述去掉所述模具60，在所述模具60原所在的区域沉积散热部40，包括：去掉所述模具60，在所述模具60原所在的区域由下至上依次沉积第二导热层41、相变材料层42及第一导热层43。
S40. 在第二次沉积的有机封装层和所述散热部40上方继续第三次沉积有机封装层，得到内嵌有所述散热部40的有机封装层30。
在本申请中，沉积所述光电器件20上的各膜层方法可采用本领域已知的方法实现，例如化学法和物理法，其中化学法包括：化学气相沉积法、连续离子层吸附与反应法、阳极氧化法、电解沉积法、共沉淀法。物理法包括物理镀膜法和溶液加工法。具体的物理镀膜法包括：热蒸发镀膜法、电子束蒸发镀膜法、磁控溅射法、多弧离子镀膜法、物理气相沉积法、原子层沉积法、脉冲激光沉积法等。溶液加工法包括旋涂法、印刷法、喷墨打印法、刮涂法、打印法、浸渍提拉法、浸泡法、喷涂法、滚涂法、浇铸法、狭缝式涂布法、条状涂布法。
例如：在本申请一实施例中，所述有机封装层30利用溶液法中的喷墨打印法来制备，喷墨打印法主要利用喷墨打印设备进行有机封装层30的制备，该方法主要将有机封装材料的溶液进行过滤，装于喷墨打印设备的墨盒中，在调节打印电压、气压、波形等参数之后，对位标记将墨水滴落于预定的区域内，形成有机封装层30。在本申请中，以喷墨打印法制备各功能层，利用该方法能大幅度降低生产成本，用于大规模生产。
在本申请另一实施例中，所述有机封装层30利用溶液法中的旋涂法来制备，在本申请中，利用旋涂法进行有机封装层30的制备需要先配置好有机封装材料溶液，将待旋涂的片子置于旋涂仪上，将配置好的有机封装溶液滴加至旋涂仪上方，以预设的转速进行旋涂，热处理后完成有机封装层30的制备。旋涂法具有工艺条件温和、操作简单、节能环保等特点，其制备光电器件20具有载流子迁移率高、厚度精确等优势。
溶液法为本领域沉积膜层常用的方法，本申请实施例将散热部以内嵌方式设置在有机封装层30内，在制备过程中，有机封装层分三次形成，与散热部是分别制备，因此不会改变有机封装层材料的特性，避免了将相变材料与有机封装层30材料的混合导致有机封装材料溶液粘度的变化，影响溶液法制程的可行性。
在本申请关于所述封装结构的制备方法的各个实施例中没有详述的部分，请参见本申请关于所述封装结构的相关描述。
基于同一构思，本申请还提供一种显示装置，该装置包括光电器件20，以及以上实施例中所述的封装结构，或者包括光电器件20，以及由以上实施例中所述的方法制备的封装结构，其结构、实现原理及效果类似，在此不再赘述。
所述显示装置可以为：照明灯具和背光源，或者是手机、平板电脑、电视机、显示器、笔记本电脑、数码相框和导航仪等任何具有显示功能的产品或部件。
以上对本发明实施例所提供的一种封装结构、封装方法及显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。

Claims (20)

  1. 一种封装结构，用于封装光电器件，其中，包括：覆盖在所述光电器件上的至少一有机封装层，所述有机封装层内嵌有散热部，所述散热部包括相变材料层。
  2. 根据权利要求1所述的封装结构，其中，
    所述散热部还包括第一导热层，所述第一导热层位于所述相变材料层远离所述光电器件的一侧，所述第一导热层的导热率高于所述相变材料层的导热率。
  3. 根据权利要求2所述的封装结构，其中，所述散热部还包括第二导热层，所述第二导热层位于所述相变材料层靠近所述光电器件的一侧，所述第二导热层的导热率低于所述第一导热层的导热率，且所述第二导热层的导热率高于所述相变材料层的导热率。
  4. 根据权利要求3所述的封装结构，其中，
    所述第一导热层材料选自金属、无机绝缘材料、有机绝缘材料及二维材料中的一种或多种，所述第二导热层材料选自金属、无机绝缘材料、有机绝缘材料及二维材料中的一种或多种。
  5. 根据权利要求3所述的封装结构，其中，所述散热部厚度小于所述有机封装层厚度，所述有机封装层的厚度为15nm至2mm，所述第一导热层的厚度为5nm至800nm，所述第二导热层的厚度为5nm至800nm，所述相变材料层的厚度为5nm至1.9mm。
  6. 根据权利要求1所述的封装结构，其中，所述相变材料层在所述光电器件产生热量时具有相的可变性，所述相变材料层的相变材料选自固-液相变材料及固-固相变材料中的一种或多种。
  7. 根据权利要求1所述的封装结构，其中，所述相变材料层的相变材料选自脂肪烃类、脂肪酸类及多元醇类中的一种或多种。
  8. 根据权利要求7所述的封装结构，其中，所述脂肪烃类选自直链烷烃类材料及其改性或复合材料，所述脂肪酸类选自月桂酸类材料、癸酸类材料及其改性或复合材料，所述多元醇类包括但不限于季戊四醇、三羟甲基乙烷、新戊二醇、三羟甲基氨基甲烷及其复合材料。
  9. 根据权利要求1所述的封装结构，其中，所述相变材料层的相变材料的相变温度低于所述光电器件的工作温度。
  10. 根据权利要求1所述的封装结构，其中，所述散热部的正投影覆盖所述光电器件的正投影。
  11. 根据权利要求1所述的封装结构，其中，所述封装结构还包括至少一无机封装层，所述无机封装层与所述有机封装层交替层叠设置，且至少有一有机封装层与所述光电器件直接接触。
  12. 一种光电器件封装方法，其中，包括：
    在待封装的光电器件上第一次沉积有机封装层；
    在第一次沉积的有机封装层上一区域设置模具，围绕所述模具所在的区域，在第一次沉积的有机封装层上继续第二次沉积有机封装层；
    去掉所述模具，在所述模具原所在的区域沉积散热部；以及
    在第二次沉积的有机封装层和所述散热部上方继续第三次沉积有机封装层，得到内嵌有所述散热部的有机封装层；
    其中，所述散热部包括相变材料层。
  13. 根据权利要求12所述的封装方法，其中，所述散热部还包括第一导热层，所述去掉所述模具，在所述模具原所在的区域沉积散热部，包括：
    去掉所述模具，在所述模具原所在的区域由下至上依次沉积所述相变材料层及第一导热层。
  14. 根据权利要求13所述的封装方法，其中，所述第一导热层的导热率高于所述相变材料层的导热率。
  15. 根据权利要求13所述的封装方法，其中，所述散热部还包括第二导热层，所述去掉所述模具，在所述模具原所在的区域沉积散热部，包括：去掉所述模具，在所述模具原所在的区域由下至上依次沉积所述第二导热层、相变材料层及第一导热层。
  16. 根据权利要求15所述的封装方法，其中，所述第二导热层的导热率低于所述第一导热层的导热率，且所述第二导热层的导热率高于所述相变材料层的导热率。
  17. 根据权利要求15所述的封装方法，其中，所述第一导热层材料选自金属、无机绝缘材料、有机绝缘材料及二维材料中的一种或多种，所述第二导热层材料选自金属、无机绝缘材料、有机绝缘材料及二维材料中的一种或多种。
  18. 根据权利要求12所述的封装方法，其中，所述相变材料层的相变材料选自脂肪烃类、脂肪酸类及多元醇类中的一种或多种。
  19. 根据权利要求18所述的封装方法，其中，所述脂肪烃类选自直链烷烃类材料及其改性或复合材料，所述脂肪酸类选自月桂酸类材料、癸酸类材料及其改性或复合材料，所述多元醇类包括但不限于季戊四醇、三羟甲基乙烷、新戊二醇、三羟甲基氨基甲烷及其复合材料。
  20. 一种显示装置，其中，包括光电器件，以及权利要求1至11任一项所述的封装结构，或者包括光电器件，以及由权利要求12至19任一项所述的方法制备的封装结构。
PCT/CN2022/119609 2021-09-28 2022-09-19 封装结构、封装方法及显示装置 WO2023051301A1 (zh)

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