WO2023048140A1 - 弾性波装置 - Google Patents

弾性波装置 Download PDF

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Publication number
WO2023048140A1
WO2023048140A1 PCT/JP2022/034980 JP2022034980W WO2023048140A1 WO 2023048140 A1 WO2023048140 A1 WO 2023048140A1 JP 2022034980 W JP2022034980 W JP 2022034980W WO 2023048140 A1 WO2023048140 A1 WO 2023048140A1
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Prior art keywords
electrode fingers
mass addition
film
electrode
wave device
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PCT/JP2022/034980
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English (en)
French (fr)
Japanese (ja)
Inventor
克也 大門
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株式会社村田製作所
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Priority to CN202280063687.6A priority Critical patent/CN117981221A/zh
Publication of WO2023048140A1 publication Critical patent/WO2023048140A1/ja

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

Definitions

  • the present invention relates to elastic wave devices.
  • An object of the present invention is to provide an elastic wave device capable of suppressing unwanted waves at frequencies lower than and near the resonance frequency.
  • An elastic wave device includes a support member including a support substrate, a piezoelectric layer provided on the support member and being a lithium niobate layer or a lithium tantalate layer, and a piezoelectric layer provided on the piezoelectric layer. and an IDT electrode having a pair of bus bars and a plurality of electrode fingers, and overlapping at least a portion of the IDT electrode in a plan view along the stacking direction of the support member and the piezoelectric layer.
  • d is the thickness of the piezoelectric layer and p is the center-to-center distance between the adjacent electrode fingers, d/p is 0.5 or less, and one of the IDT electrodes Some of the plurality of electrode fingers are connected to the bus bar of the second bus bar, and the remaining electrode fingers of the plurality of electrode fingers are connected to the other bus bar, and are connected to one of the bus bars.
  • the plurality of electrode fingers connected to the bus bar and the plurality of electrode fingers connected to the other bus bar are inserted into each other, and the direction in which the adjacent electrode fingers face each other is defined as an electrode finger facing direction;
  • the region where the adjacent electrode fingers overlap is an intersection region, and when the direction in which the plurality of electrode fingers extends is defined as the electrode finger extending direction, the intersection region is the center. and a pair of edge regions arranged so as to sandwich the central region in the extending direction of the electrode fingers, and a pair of gaps formed between the intersecting region and the pair of bus bars.
  • At least one of the edge region and the gap region is arranged such that at least one first mass addition film and at least one second mass addition film, which are regions and are made of different materials, are arranged in the electrode finger facing direction. placed on one side.
  • an elastic wave device capable of suppressing unwanted waves at frequencies lower than and near the resonance frequency.
  • FIG. 1 is a schematic plan view of an elastic wave device according to a first embodiment of the invention.
  • FIG. 2 is a schematic cross-sectional view taken along line II in FIG.
  • FIG. 3 is a diagram showing phase characteristics in each elastic wave device of the reference example.
  • FIG. 4 is an enlarged view of FIG. 3 near 4000 MHz.
  • FIG. 5 is a cross-sectional view showing a portion corresponding to the cross-section shown in FIG. 2 of an elastic wave device according to a modification of the first embodiment of the invention.
  • FIG. 6 is a plan view of an elastic wave device according to a second embodiment of the invention.
  • FIG. 7 is a plan view of an elastic wave device according to a third embodiment of the invention.
  • FIG. 1 is a schematic plan view of an elastic wave device according to a first embodiment of the invention.
  • FIG. 2 is a schematic cross-sectional view taken along line II in FIG.
  • FIG. 3 is a diagram showing phase characteristics in each elastic wave device of the reference example.
  • FIG. 8 is a plan view of an elastic wave device according to a fourth embodiment of the invention.
  • 9 is a cross-sectional view taken along line II in FIG. 8.
  • FIG. 10 is a plan view of an acoustic wave device according to a fifth embodiment of the invention.
  • 11 is a cross-sectional view taken along line II in FIG. 10.
  • FIG. 12 is a plan view of an elastic wave device according to a sixth embodiment of the invention. 13 is a cross-sectional view taken along line II in FIG. 12.
  • FIG. FIG. 14 is a plan view of an elastic wave device according to a seventh embodiment of the invention.
  • 15 is a cross-sectional view taken along line II in FIG. 14.
  • FIG. 16(a) is a schematic perspective view showing the external appearance of an elastic wave device that utilizes a thickness shear mode bulk wave
  • FIG. 16(b) is a plan view showing an electrode structure on a piezoelectric layer
  • FIG. 17 is a cross-sectional view of a portion taken along line AA in FIG. 16(a).
  • FIG. 18(a) is a schematic front cross-sectional view for explaining a Lamb wave propagating through a piezoelectric film of an acoustic wave device
  • FIG. 18(b) is a thickness shear propagating
  • FIG. 2 is a schematic front cross-sectional view for explaining bulk waves in a mode;
  • FIG. 19 is a diagram showing amplitude directions of bulk waves in the thickness shear mode.
  • FIG. 19 is a diagram showing amplitude directions of bulk waves in the thickness shear mode.
  • FIG. 20 is a diagram showing resonance characteristics of an elastic wave device that utilizes bulk waves in a thickness-shear mode.
  • FIG. 21 is a diagram showing the relationship between d/p and the fractional bandwidth of the resonator, where p is the center-to-center distance between adjacent electrodes and d is the thickness of the piezoelectric layer.
  • FIG. 22 is a plan view of an acoustic wave device that utilizes thickness shear mode bulk waves.
  • FIG. 23 is a diagram showing the resonance characteristics of the elastic wave device of the reference example in which spurious appears.
  • FIG. 24 is a diagram showing the relationship between the fractional bandwidth and the amount of phase rotation of the spurious impedance normalized by 180 degrees as the magnitude of the spurious.
  • FIG. 25 is a diagram showing the relationship between d/2p and the metallization ratio MR.
  • FIG. 26 is a diagram showing a map of fractional bandwidth with respect to Euler angles (0°, ⁇ , ⁇ ) of LiNbO 3 when d/p is infinitely close to 0.
  • FIG. 27 is a front cross-sectional view of an elastic wave device having an acoustic multilayer film.
  • FIG. 1 is a schematic plan view of an elastic wave device according to the first embodiment of the invention.
  • FIG. 2 is a schematic cross-sectional view taken along line II in FIG.
  • the acoustic wave device 10 has a piezoelectric substrate 12 and an IDT electrode 11.
  • the piezoelectric substrate 12 has a support member 13 and a piezoelectric layer 14 .
  • the support member 13 includes a support substrate 16 and an insulating layer 15 .
  • An insulating layer 15 is provided on the support substrate 16 .
  • a piezoelectric layer 14 is provided on the insulating layer 15 .
  • the support member 13 may be composed of only the support substrate 16 .
  • the piezoelectric layer 14 has a first main surface 14a and a second main surface 14b.
  • the first main surface 14a and the second main surface 14b face each other.
  • the second principal surface 14b is located on the support member 13 side.
  • the material of the support substrate 16 for example, semiconductors such as silicon, ceramics such as aluminum oxide, and the like can be used.
  • the insulating layer 15 any suitable dielectric such as silicon oxide or tantalum oxide can be used.
  • the piezoelectric layer 14 may be, for example, a lithium niobate layer such as a LiNbO3 layer or a lithium tantalate layer such as a LiTaO3 layer.
  • the insulating layer 15 is provided with recesses.
  • a piezoelectric layer 14 is provided on the insulating layer 15 so as to close the recess.
  • a hollow portion is thus formed.
  • This hollow portion is the hollow portion 10a.
  • the support member 13 and the piezoelectric layer 14 are arranged such that a portion of the support member 13 and a portion of the piezoelectric layer 14 face each other with the hollow portion 10a interposed therebetween.
  • the recess in the support member 13 may be provided over the insulating layer 15 and the support substrate 16 .
  • the recess provided only in the support substrate 16 may be closed with the insulating layer 15 .
  • the recess may be provided in the piezoelectric layer 14 .
  • the hollow portion 10 a may be a through hole provided in the support member 13 .
  • the elastic wave device 10 of this embodiment is an elastic wave resonator configured to be able to use bulk waves in a thickness-shear mode.
  • the elastic wave device of the present invention may be a filter device having a plurality of elastic wave resonators, a multiplexer, or the like.
  • the term “planar view” refers to viewing from the direction corresponding to the upper side in FIG. 2 along the stacking direction of the support member 13 and the piezoelectric layer 14 .
  • the piezoelectric layer 14 side is the upper side.
  • the IDT electrode 11 has a pair of busbars and a plurality of electrode fingers.
  • a pair of busbars is specifically a first busbar 26 and a second busbar 27 .
  • the first busbar 26 and the second busbar 27 face each other.
  • the plurality of electrode fingers are specifically a plurality of first electrode fingers 28 and a plurality of second electrode fingers 29 .
  • One ends of the plurality of first electrode fingers 28 are each connected to the first bus bar 26 .
  • One ends of the plurality of second electrode fingers 29 are each connected to the second bus bar 27 .
  • the plurality of first electrode fingers 28 and the plurality of second electrode fingers 29 are interleaved with each other.
  • the IDT electrode 11 may be composed of a single-layer metal film, or may be composed of a laminated metal film.
  • first electrode finger 28 and the second electrode finger 29 may be simply referred to as electrode fingers.
  • the first busbar 26 and the second busbar 27 may be simply referred to as busbars.
  • the electrode finger extending direction and the electrode finger facing direction are Orthogonal.
  • d/p is 0.5 or less, where d is the thickness of the piezoelectric layer 14 and p is the center-to-center distance between adjacent electrode fingers. As a result, thickness-shear mode bulk waves are preferably excited.
  • the hollow portion 10a shown in FIG. 2 is the acoustic reflection portion in the present invention.
  • the acoustic reflector can effectively confine the energy of the elastic wave to the piezoelectric layer 14 side.
  • an acoustic reflection film such as an acoustic multilayer film, which will be described later, may be provided.
  • the IDT electrode 11 has an intersecting region F.
  • the intersecting region F is a region where adjacent electrode fingers overlap each other when viewed from the direction in which the electrode fingers are opposed.
  • the intersection region F has a central region H and a pair of edge regions.
  • a pair of edge regions is specifically a first edge region E1 and a second edge region E2.
  • the first edge region E1 and the second edge region E2 are arranged so as to face each other with the central region H interposed therebetween in the direction in which the electrode fingers extend.
  • the first edge region E1 is located on the first bus bar 26 side.
  • the second edge region E2 is located on the second busbar 27 side.
  • the IDT electrode 11 has a pair of gap regions.
  • a pair of gap regions are located between the intersection region F and a pair of busbars.
  • a pair of gap regions is specifically a first gap region G1 and a second gap region G2.
  • the first gap region G1 is located between the first busbar 26 and the first edge region E1.
  • the second gap region G2 is located between the second busbar 27 and the second edge region E2.
  • first mass addition film 24 and one second mass addition film 25 are provided in the first edge region E1.
  • first edge region E1 the first mass addition film 24 and the second mass addition film 25 are arranged side by side in the electrode finger facing direction.
  • the first mass addition film 24 is made of silicon oxide, such as SiO 2 .
  • the second mass addition film 25 consists of tantalum oxide, for example Ta2O5 .
  • the material of the first mass addition film 24 and the material of the second mass addition film 25 are not limited to the above. It is sufficient if the material of the first mass addition film 24 and the material of the second mass addition film are different from each other.
  • the term "a certain member is made of a certain material” includes the case where a minute amount of impurity is included to such an extent that the electrical characteristics of the acoustic wave device are not significantly degraded.
  • first mass addition film 24 and one second mass addition film 25 are also provided in the second edge region E2.
  • a pair of first mass addition films 24 and a pair of second mass addition films 25 are provided in a pair of edge regions.
  • the first mass addition film 24 and the second mass addition film 25 have the same dimension along the extending direction of the electrode fingers and the same thickness.
  • Each first mass addition film 24 and each second mass addition film 25 in each edge region has a strip shape.
  • Each first mass addition film 24 is provided on the first main surface 14a of the piezoelectric layer 14 so as to cover the plurality of electrode fingers.
  • Each second mass addition film 25 is provided on the first main surface 14a of the piezoelectric layer 14 so as to cover a plurality of electrode fingers other than the electrode fingers covered by each first mass addition film 24.
  • each of the plurality of electrode fingers has a first surface 11a, a second surface 11b, and a side surface 11c.
  • the first surface 11a and the second surface 11b face each other.
  • a side surface 11c is connected to the first surface 11a and the second surface 11b.
  • the second surface 11b is the surface on the piezoelectric layer 14 side.
  • the first mass addition film 24 is provided on the first surface 11a of each electrode finger.
  • the first mass addition film 24 and the second mass addition film 25 are continuously provided on the first surface 11a and the area between the electrode fingers on the piezoelectric layer 14. As shown in FIG.
  • first mass addition film 24 and the second mass addition film 25 are provided on the first surfaces 11a of the electrode fingers different from each other and on the regions between the electrode fingers different from each other.
  • the first mass addition film 24 and the second mass addition film 25 also cover the side surface 11c of each electrode finger.
  • first mass addition film 24 and the second mass addition film 25 are provided only in both edge regions. Note that the first mass addition film 24 and the second mass addition film 25 may be provided in the gap region.
  • a feature of this embodiment is that at least one first mass addition film 24 and at least one second mass addition film 25 made of different materials are arranged in the electrode finger facing direction in the edge region and the gap region. It is provided in at least one side.
  • frequencies at which unnecessary waves are generated can be dispersed in a frequency band that is lower than the resonance frequency and located near the resonance frequency. Therefore, it is possible to suppress unnecessary waves of frequencies lower than the resonance frequency and located near the resonance frequency. Details of this are provided below by reference to a reference example. In the following description, when an unwanted wave is simply described, it means an unwanted wave generated at a frequency lower than the resonance frequency and located near the resonance frequency, unless otherwise specified.
  • the reference example differs from the first embodiment in that a pair of mass addition films are provided over a pair of edge regions and a pair of gap regions. In the reference example, only one type of mass adding film is provided over a pair of edge regions and a pair of gap regions.
  • An acoustic wave device of a reference example in which a mass addition film is made of SiO 2 and an acoustic wave device of a reference example in which a mass addition film is made of Ta 2 O 5 were prepared. The thickness of the mass addition film in each acoustic wave device was set to 15 nm. The phase characteristics of each elastic wave device were measured.
  • FIG. 3 is a diagram showing phase characteristics in each elastic wave device of the reference example.
  • FIG. 4 is an enlarged view of FIG. 3 near 4000 MHz.
  • the frequencies at which ripples caused by unnecessary waves are generated are also different. This is the same even when the mass addition film is provided only in the edge region as in the first embodiment. Furthermore, the same applies when the mass addition film is provided only in the gap region.
  • the first mass addition film 24 and the second mass addition film 25 made of different materials are arranged in the electrode finger facing direction. Therefore, in the first embodiment, in the edge region, the material of the mass addition film provided in one portion in the electrode finger facing direction and the material of the mass addition film provided in the other portion are different from each other. That is, the material of the mass adding film provided in the edge region is not uniform in the electrode finger facing direction. As a result, frequencies at which unwanted waves are generated can be dispersed, and the intensity of the unwanted waves can be reduced. Therefore, unwanted waves can be suppressed.
  • the intersecting region F in the IDT electrode 11 of the acoustic wave device 10 includes a plurality of excitation regions C. More specifically, the excitation region C is the region between the centers of adjacent electrode fingers. Elastic waves are excited in a plurality of excitation regions C by applying an AC voltage to the IDT electrodes 11 .
  • the intersection region is one excitation region.
  • the acoustic wave device 10 that uses thickness-shear mode bulk waves is substantially equivalent to a configuration in which a plurality of resonators each having an excitation region C are connected in parallel. . Therefore, in the acoustic wave device 10, even if the material of the mass adding film is not uniform in the direction in which the electrode fingers are opposed, the waveform of the frequency characteristics such as the phase characteristics is less likely to collapse. Therefore, in the first embodiment, unnecessary waves can be suppressed without deteriorating electrical characteristics.
  • the first mass addition film 24 and the second mass addition film 25 are provided only in the edge region, the amount of change in the fractional band can be reduced. Thereby, the electrical characteristics of the acoustic wave device 10 can be stabilized.
  • the provision of the first mass addition film 24 and the second mass addition film 25 constitutes a low sound velocity region in each edge region.
  • the low sound velocity region is a region in which the sound velocity is lower than the sound velocity in the central region H.
  • a central region H and a low-frequency region are arranged in this order from the inner side to the outer side of the IDT electrode 11 in the electrode finger extending direction. Thereby, the piston mode is established and the transverse mode can be suppressed.
  • the elastic wave device of the present invention utilizes thickness-shear mode bulk waves instead of surface acoustic waves.
  • the piston mode can be suitably established.
  • At least one dielectric selected from the group consisting of silicon oxide, tungsten oxide, niobium oxide, tantalum oxide and hafnium oxide is preferably used as the material of the first mass addition film 24 .
  • the piston mode can be established more reliably, and the lateral mode can be suppressed more reliably.
  • the material of the second mass addition film 25 is different from the material of the first mass addition film 24 and at least one selected from the group consisting of silicon oxide, tungsten oxide, niobium oxide, tantalum oxide and hafnium oxide.
  • a seed dielectric is used.
  • the piston mode can be established more reliably, and the transverse mode can be suppressed more reliably.
  • one first mass addition film 24 and one second mass addition film are each provided in each edge region.
  • a plurality of first mass addition films 24 and a plurality of second mass addition films 25 are provided in the first edge region.
  • the first mass addition films 24 and the second mass addition films 25 are alternately arranged in the electrode finger facing direction.
  • Each first mass adding film 24 covers a plurality of electrode fingers.
  • Each second mass addition film 25 covers a plurality of electrode fingers other than the electrode fingers covered by each first mass addition film 24 .
  • the frequencies at which unwanted waves are generated can be dispersed, and the unwanted waves can be suppressed.
  • FIG. 6 is a plan view of the elastic wave device according to the second embodiment.
  • This embodiment differs from the first embodiment in that the first mass addition film 24 and the second mass addition film 25 are provided only in both gap regions. Except for the above points, the elastic wave device of this embodiment has the same configuration as the elastic wave device 10 of the first embodiment.
  • One of the pair of first mass addition films 24 is provided in the first gap region G1.
  • the other of the pair of first mass adding films 24 is provided in the second gap region G2.
  • one of the pair of second mass addition films 25 is provided in the first gap region G1.
  • the second mass addition film 25 is provided so as to be aligned with the first mass addition film 24 provided in the first gap region G1 in the electrode finger facing direction.
  • the other of the pair of second mass adding films 25 is provided in the second gap region G2.
  • the second mass addition film 25 is provided so as to be aligned with the first mass addition film 24 provided in the second gap region G2 in the electrode finger facing direction.
  • the first mass addition film 24 and the second mass addition film 25 do not reach the end on the busbar side in the gap region.
  • the first mass addition film 24 and the second mass addition film 25 may be provided over the entire gap region in the extending direction of the electrode fingers.
  • the first mass addition film 24 and the second mass addition film 25 may be provided in at least a part of the gap region in the extending direction of the electrode fingers.
  • the first mass addition film 24 and the second mass addition film 25 have the same dimension along the extending direction of the electrode fingers and the same thickness.
  • the first mass addition film 24 and the second mass addition film 25 provided in the gap region are arranged in the electrode finger facing direction. Therefore, the material of the mass adding film is not uniform in the direction in which the electrode fingers are opposed. As a result, as in the first embodiment, it is possible to disperse the frequencies at which unnecessary waves are generated and suppress the unnecessary waves.
  • FIG. 7 is a plan view of an elastic wave device according to the third embodiment.
  • This embodiment differs from the first embodiment in that the first mass addition film 24 and the second mass addition film 25 are provided over the edge region and the gap region. Except for the above points, the elastic wave device of this embodiment has the same configuration as the elastic wave device 10 of the first embodiment.
  • One of the pair of first mass addition films 24 is provided over the first edge region E1 and the first gap region G1.
  • the other of the pair of first mass adding films 24 is provided over the second edge region E2 and the second gap region G2.
  • one of the pair of second mass addition films 25 is provided over the first edge region E1 and the first gap region G1.
  • the second mass addition film 25 is provided so as to be aligned with the first mass addition film 24 provided in the first gap region G1 in the electrode finger facing direction.
  • the other of the pair of second mass adding films 25 is provided in the second gap region G2.
  • the second mass addition film 25 is provided so as to be aligned with the first mass addition film 24 provided in the second gap region G2 in the electrode finger facing direction.
  • the first mass addition film 24 and the second mass addition film 25 provided over the edge region and the gap region are arranged in the electrode finger facing direction. Therefore, the material of the mass adding film is not uniform in the direction in which the electrode fingers are opposed. As a result, as in the first embodiment, it is possible to disperse the frequencies at which unnecessary waves are generated and suppress the unnecessary waves.
  • the first mass addition film 24 and the second mass addition film 25 are strip-shaped.
  • the first mass addition film 24 and the second mass addition film 25 are respectively continuously provided on the plurality of electrode fingers and on the regions between the electrode fingers.
  • the first mass addition film 24 or the second mass addition film 25 may be provided only on the electrode fingers, for example. Examples of this are illustrated by the fourth and fifth embodiments.
  • FIG. 8 is a plan view of an elastic wave device according to the fourth embodiment. 9 is a cross-sectional view taken along line II in FIG. 8. FIG.
  • this embodiment differs from the first embodiment in that each edge region is provided with a plurality of first mass adding films 34 . Except for the above points, the elastic wave device of this embodiment has the same configuration as the elastic wave device 10 of the first embodiment.
  • the plurality of first mass adding films 34 are arranged in the electrode finger facing direction. In plan view, each first mass adding film 34 and each electrode finger overlap each other. More specifically, in the first edge region E1, each first mass addition film 34 covers only the first surface 11a of one first electrode finger 28 or one second electrode finger. 29 is provided only on the first surface 11a. The same applies to the second edge region E2.
  • the plurality of first mass adding films 34 are provided only in regions overlapping with the electrode fingers in plan view.
  • the dimensions along the electrode finger extension direction and the thickness of the plurality of first mass addition films 34 and the second mass addition films 24 are all the same.
  • the dimensions along the extending direction of the electrode fingers and the thicknesses of all the first mass addition films 34 and the second mass addition films 25 may not necessarily be the same.
  • the second mass addition film 25 is continuously provided in a region overlapping the plurality of electrode fingers and the region between the electrode fingers in plan view.
  • the plurality of first mass addition films 34 and second mass addition films 25 are provided on different electrode fingers.
  • a plurality of first mass addition films 34 and second mass addition films 25 provided in the edge region are arranged in the electrode finger facing direction. Therefore, the material of the mass adding film is not uniform in the direction in which the electrode fingers are opposed. As a result, as in the first embodiment, it is possible to disperse the frequencies at which unnecessary waves are generated and suppress the unnecessary waves.
  • Each first mass addition film 34 is not in contact with both of the electrode fingers connected to different potentials.
  • metal can be used as the material of the plurality of first mass addition films 34 .
  • a dielectric may be used as the material of the plurality of first mass adding films 34 .
  • FIG. 10 is a plan view of an elastic wave device according to the fifth embodiment.
  • 11 is a cross-sectional view taken along line II in FIG. 10.
  • this embodiment differs from the fourth embodiment in that each edge region is provided with a plurality of second mass adding films 35 . Therefore, in this embodiment, a plurality of first mass addition films 34 and a plurality of second mass addition films 35 are provided. Except for the above points, the elastic wave device of this embodiment has the same configuration as the elastic wave device of the fourth embodiment.
  • the plurality of second mass adding films 35 are arranged in the electrode finger facing direction. In a plan view, each second mass adding film 35 and each electrode finger overlap each other. More specifically, in the first edge region E1, each second mass addition film 35 covers only the first surface 11a of one first electrode finger 28 or one second electrode finger. 29 is provided only on the first surface 11a. The same applies to the second edge region E2.
  • the plurality of second mass adding films 35 are provided only in regions overlapping with the electrode fingers in plan view.
  • the dimensions along the extending direction of the electrode fingers and the thicknesses of the plurality of first mass addition films 34 and the plurality of second mass addition films 35 are the same. is. However, the dimensions along the extending direction of the electrode fingers and the thicknesses of all the first mass addition films 34 and all the second mass addition films 35 may not necessarily be the same.
  • the plurality of first mass addition films 34 and the plurality of second mass addition films 35 provided in the edge region are arranged in the electrode finger facing direction. Therefore, the material of the mass adding film is not uniform in the direction in which the electrode fingers are opposed. As a result, as in the fourth embodiment, it is possible to disperse the frequencies at which unnecessary waves are generated and suppress the unnecessary waves.
  • Each first mass addition film 34 and each second mass addition film 35 are not in contact with both electrode fingers connected to different potentials.
  • metal can be used as the material of the plurality of first mass addition films 34 and the plurality of second mass addition films 35 .
  • materials for the first mass addition film 34 and the second mass addition film 35 different kinds of metals may be used.
  • a dielectric may be used as the material of the plurality of first mass addition films 34 or the plurality of second mass addition films 35 .
  • the plurality of first mass addition films 34 and the plurality of second mass addition films 35 are provided only in both edge regions, as in the first embodiment. Thereby, also in this embodiment, the amount of change in the fractional band can be reduced, and the electrical characteristics of the elastic wave device can be stabilized.
  • a plurality of first mass addition films 34 and a plurality of second mass addition films 35 may be provided over the first edge region E1 and the first gap region G1 shown in FIG.
  • a plurality of first mass addition films 34 and a plurality of second mass addition films 35 may be provided over the second edge region E2 and the second gap region G2.
  • the plurality of first mass addition films 34 and the plurality of second mass addition films 35 may be provided only in both gap regions.
  • this embodiment is different in that the protective film 46 is provided, and the first mass addition film 24 and the second mass addition film 25 are provided on the protection film 46. , differs from the third embodiment. Except for the above points, the elastic wave device of this embodiment has the same configuration as the elastic wave device of the third embodiment.
  • the protective film 46 is provided on the first main surface 14 a of the piezoelectric layer 14 so as to cover the IDT electrodes 11 . Thereby, the IDT electrode 11 is less likely to be damaged.
  • a material of the protective film 46 for example, silicon oxide, silicon nitride, silicon oxynitride, or the like can be used.
  • one first mass addition film 24 and one second mass addition film 25 are provided over the edge region and the gap region.
  • Each of the first mass addition film 24 and the second mass addition film 25 is continuously provided in a region overlapping the plurality of electrode fingers and the region between the electrode fingers in plan view. Even when the protective film 46 is provided, the first mass addition film 24 and the second mass addition film 25 may be provided only in the edge region, and may be provided only in the gap region. good too.
  • the electrode fingers, the protection film 46 and the first mass addition film 24 are stacked in the order of Similarly, in the portion where the electrode fingers, the second mass addition film 25 and the protective film 46 are laminated, the electrode fingers, the protective film 46 and the second mass addition film 25 are laminated in this order.
  • the order of lamination is not limited to the above.
  • the electrode fingers, the first mass addition film 24 and the protection film 46 may be stacked in this order.
  • the first mass addition film 24, the electrode fingers and the protective film 46 may be laminated in this order. The same applies to the portions where the electrode fingers, the second mass adding film 25 and the protective film 46 are laminated.
  • the first mass addition film 24 and the second mass addition film 25 provided over the edge region and the gap region are arranged in the electrode finger facing direction. Therefore, the material of the mass adding film is not uniform in the direction in which the electrode fingers are opposed. As a result, as in the third embodiment, it is possible to disperse the frequencies at which unnecessary waves are generated, and suppress the unnecessary waves.
  • the first mass addition film 24 and the second mass addition film 25 are not in contact with the electrode fingers.
  • metal can be used as the material of the first mass addition film 24 and the second mass addition film 25 .
  • materials for the first mass addition film 24 and the second mass addition film 25 metals of different kinds may be used.
  • the first mass addition film 24 and the second mass addition film 25 sandwich the protective film 46 and face the plurality of electrode fingers. Therefore, when metal is used as the material of the first mass addition film 24 and the second mass addition film 25, the electrostatic capacitance of the elastic wave device can be increased. Therefore, it is possible to reduce the area of the IDT electrode 11 for obtaining a desired capacitance. Therefore, the acoustic wave device can be miniaturized.
  • a dielectric may be used as the material of the first mass addition film 24 or the second mass addition film 25 .
  • the thickness of the protective film 46 is the thickness of the protective film 46 in the central region H shown in FIG.
  • the thickness of the first mass addition film 24 is obtained by subtracting the thickness of the protection film 46 from the total thickness of the protection film 46 and the first mass addition film 24 .
  • the protective film 46 and the second mass adding film 25 are made of the same material.
  • the configuration provided with the protective film 46 can also be employed in configurations of the present invention other than the present embodiment.
  • a plurality of first mass addition films 34 or a plurality of mass addition films 35 shown in FIG. 11 may be provided on the protective film 46 .
  • FIG. 14 is a plan view of an elastic wave device according to the seventh embodiment.
  • 15 is a cross-sectional view taken along line II in FIG. 14.
  • FIG. 14 is a plan view of an elastic wave device according to the seventh embodiment.
  • 15 is a cross-sectional view taken along line II in FIG. 14.
  • the present embodiment is characterized in that the first mass addition film 24 and the second mass addition film 25 are provided between the plurality of electrode fingers and the piezoelectric layer 14. 1 embodiment. Except for the above points, the elastic wave device of this embodiment has the same configuration as the elastic wave device 10 of the first embodiment.
  • the first mass addition film 24 includes the second surfaces 11b of the plurality of first electrode fingers 28 and the plurality of second electrode fingers 29, and the piezoelectric layer 14. is provided between Similarly, a second mass addition film 25 is provided between the second surface 11 b of the plurality of first electrode fingers 28 and the plurality of second electrode fingers 29 and the piezoelectric layer 14 . Even if the plurality of first mass addition films 34 or the plurality of second mass addition films 35 shown in FIG. 11 are provided between the second surfaces 11b of the plurality of electrode fingers and the piezoelectric layer 14 good.
  • the first mass addition film 24 and the second mass addition film 25 provided in the edge region are arranged in the electrode finger facing direction. Therefore, the material of the mass adding film is not uniform in the direction in which the electrode fingers are opposed. As a result, as in the first embodiment, it is possible to disperse the frequencies at which unnecessary waves are generated and suppress the unnecessary waves.
  • Electrodes in the IDT electrodes to be described later correspond to electrode fingers in the present invention.
  • the supporting member in the following examples corresponds to the supporting substrate in the present invention.
  • FIG. 16(a) is a schematic perspective view showing the external appearance of an elastic wave device that utilizes a thickness shear mode bulk wave
  • FIG. 16(b) is a plan view showing an electrode structure on a piezoelectric layer
  • FIG. 17 is a cross-sectional view of a portion taken along line AA in FIG. 16(a).
  • the acoustic wave device 1 has a piezoelectric layer 2 made of LiNbO 3 .
  • the piezoelectric layer 2 may consist of LiTaO 3 .
  • the cut angle of LiNbO 3 and LiTaO 3 is Z-cut, but may be rotational Y-cut or X-cut.
  • the thickness of the piezoelectric layer 2 is not particularly limited, it is preferably 40 nm or more and 1000 nm or less, more preferably 50 nm or more and 1000 nm or less, in order to effectively excite the thickness-shear mode.
  • the piezoelectric layer 2 has first and second major surfaces 2a and 2b facing each other. Electrodes 3 and 4 are provided on the first main surface 2a.
  • the electrode 3 is an example of the "first electrode” and the electrode 4 is an example of the "second electrode”.
  • the multiple electrodes 3 are multiple first electrode fingers connected to the first bus bar 5 .
  • the multiple electrodes 4 are multiple second electrode fingers connected to the second bus bar 6 .
  • the plurality of electrodes 3 and the plurality of electrodes 4 are interleaved with each other. Electrodes 3 and 4 have a rectangular shape and a length direction. The electrode 3 and the adjacent electrode 4 face each other in a direction perpendicular to the length direction. Both the length direction of the electrodes 3 and 4 and the direction orthogonal to the length direction of the electrodes 3 and 4 are directions crossing the thickness direction of the piezoelectric layer 2 .
  • the electrode 3 and the adjacent electrode 4 face each other in the direction crossing the thickness direction of the piezoelectric layer 2 .
  • the length direction of the electrodes 3 and 4 may be interchanged with the direction perpendicular to the length direction of the electrodes 3 and 4 shown in FIGS. 16(a) and 16(b). That is, in FIGS. 16A and 16B, the electrodes 3 and 4 may extend in the direction in which the first busbar 5 and the second busbar 6 extend. In that case, the first busbar 5 and the second busbar 6 extend in the direction in which the electrodes 3 and 4 extend in FIGS. 16(a) and 16(b).
  • a plurality of pairs of structures in which an electrode 3 connected to one potential and an electrode 4 connected to the other potential are adjacent to each other are provided in a direction perpendicular to the length direction of the electrodes 3 and 4.
  • the electrodes 3 and 4 are adjacent to each other, it does not mean that the electrodes 3 and 4 are arranged so as to be in direct contact with each other, but that the electrodes 3 and 4 are arranged with a gap therebetween. point to When the electrodes 3 and 4 are adjacent to each other, no electrodes connected to the hot electrode or the ground electrode, including the other electrodes 3 and 4, are arranged between the electrodes 3 and 4.
  • the logarithms need not be integer pairs, but may be 1.5 pairs, 2.5 pairs, or the like.
  • the center-to-center distance or pitch between the electrodes 3 and 4 is preferably in the range of 1 ⁇ m or more and 10 ⁇ m or less.
  • the width of the electrodes 3 and 4, that is, the dimension of the electrodes 3 and 4 in the facing direction is preferably in the range of 50 nm or more and 1000 nm or less, more preferably in the range of 150 nm or more and 1000 nm or less.
  • the center-to-center distance between the electrodes 3 and 4 means the distance between the center of the dimension (width dimension) of the electrode 3 in the direction orthogonal to the length direction of the electrode 3 and the distance between the center of the electrode 4 in the direction orthogonal to the length direction of the electrode 4. It is the distance connecting the center of the dimension (width dimension) of
  • the direction perpendicular to the length direction of the electrodes 3 and 4 is the direction perpendicular to the polarization direction of the piezoelectric layer 2 .
  • “perpendicular” is not limited to being strictly perpendicular, but is substantially perpendicular (the angle formed by the direction perpendicular to the length direction of the electrodes 3 and 4 and the polarization direction is, for example, 90° ⁇ 10°). within the range).
  • a supporting member 8 is laminated on the second main surface 2b side of the piezoelectric layer 2 with an insulating layer 7 interposed therebetween.
  • the insulating layer 7 and the support member 8 have a frame shape and, as shown in FIG. 17, have through holes 7a and 8a.
  • a cavity 9 is thereby formed.
  • the cavity 9 is provided so as not to disturb the vibration of the excitation region C of the piezoelectric layer 2 . Therefore, the support member 8 is laminated on the second main surface 2b with the insulating layer 7 interposed therebetween at a position not overlapping the portion where at least one pair of electrodes 3 and 4 are provided. Note that the insulating layer 7 may not be provided. Therefore, the support member 8 can be directly or indirectly laminated to the second main surface 2b of the piezoelectric layer 2 .
  • the insulating layer 7 is made of silicon oxide. However, in addition to silicon oxide, suitable insulating materials such as silicon oxynitride and alumina can be used.
  • the support member 8 is made of Si. The plane orientation of the surface of Si on the piezoelectric layer 2 side may be (100), (110), or (111). It is desirable that the Si constituting the support member 8 has a high resistivity of 4 k ⁇ cm or more. However, the support member 8 can also be constructed using an appropriate insulating material or semiconductor material.
  • Materials for the support member 8 include, for example, aluminum oxide, lithium tantalate, lithium niobate, piezoelectric materials such as crystal, alumina, magnesia, sapphire, silicon nitride, aluminum nitride, silicon carbide, zirconia, cordierite, mullite, and steer.
  • Various ceramics such as tight and forsterite, dielectrics such as diamond and glass, and semiconductors such as gallium nitride can be used.
  • the plurality of electrodes 3, 4 and the first and second bus bars 5, 6 are made of appropriate metals or alloys such as Al, AlCu alloys.
  • the electrodes 3 and 4 and the first and second bus bars 5 and 6 have a structure in which an Al film is laminated on a Ti film. Note that an adhesion layer other than the Ti film may be used.
  • d/p is 0.0, where d is the thickness of the piezoelectric layer 2 and p is the center-to-center distance between any one of the pairs of electrodes 3 and 4 adjacent to each other. 5 or less. Therefore, the thickness-shear mode bulk wave is effectively excited, and good resonance characteristics can be obtained. More preferably, d/p is 0.24 or less, in which case even better resonance characteristics can be obtained.
  • the elastic wave device 1 Since the elastic wave device 1 has the above configuration, even if the logarithm of the electrodes 3 and 4 is reduced in an attempt to reduce the size, the Q value is unlikely to decrease. This is because the propagation loss is small even if the number of electrode fingers in the reflectors on both sides is reduced. Moreover, the fact that the number of electrode fingers can be reduced is due to the fact that bulk waves in the thickness-shear mode are used. The difference between the Lamb wave used in the elastic wave device and the bulk wave in the thickness shear mode will be described with reference to FIGS. 18(a) and 18(b).
  • FIG. 18(a) is a schematic front cross-sectional view for explaining a Lamb wave propagating through a piezoelectric film of an acoustic wave device as described in Japanese Unexamined Patent Publication No. 2012-257019.
  • waves propagate through the piezoelectric film 201 as indicated by arrows.
  • the first main surface 201a and the second main surface 201b face each other, and the thickness direction connecting the first main surface 201a and the second main surface 201b is the Z direction. is.
  • the X direction is the direction in which the electrode fingers of the IDT electrodes are arranged.
  • the Lamb wave propagates in the X direction as shown.
  • the wave is generated on the first main surface 2a and the second main surface of the piezoelectric layer 2. 2b, ie, the Z direction, and resonates. That is, the X-direction component of the wave is significantly smaller than the Z-direction component. Further, since resonance characteristics are obtained by propagating waves in the Z direction, propagation loss is unlikely to occur even if the number of electrode fingers of the reflector is reduced. Furthermore, even if the number of electrode pairs consisting of the electrodes 3 and 4 is reduced in an attempt to promote miniaturization, the Q value is unlikely to decrease.
  • FIG. 19 schematically shows bulk waves when a voltage is applied between the electrodes 3 and 4 so that the potential of the electrode 4 is higher than that of the electrode 3 .
  • the first region 451 is a region of the excitation region C between the first main surface 2a and a virtual plane VP1 that is perpendicular to the thickness direction of the piezoelectric layer 2 and bisects the piezoelectric layer 2 .
  • the second region 452 is a region of the excitation region C between the virtual plane VP1 and the second main surface 2b.
  • the acoustic wave device 1 at least one pair of electrodes consisting of the electrodes 3 and 4 is arranged.
  • the number of electrode pairs need not be plural. That is, it is sufficient that at least one pair of electrodes is provided.
  • the electrode 3 is an electrode connected to a hot potential
  • the electrode 4 is an electrode connected to a ground potential.
  • electrode 3 may also be connected to ground potential and electrode 4 to hot potential.
  • at least one pair of electrodes is an electrode connected to a hot potential or an electrode connected to a ground potential, as described above, and no floating electrodes are provided.
  • FIG. 20 is a diagram showing resonance characteristics of the elastic wave device shown in FIG.
  • the design parameters of the elastic wave device 1 with this resonance characteristic are as follows.
  • Insulating layer 7 Silicon oxide film with a thickness of 1 ⁇ m.
  • Support member 8 Si.
  • the length of the excitation region C is the dimension along the length direction of the electrodes 3 and 4 of the excitation region C.
  • the inter-electrode distances of the electrode pairs consisting of the electrodes 3 and 4 are all the same in a plurality of pairs. That is, the electrodes 3 and 4 were arranged at equal pitches.
  • d/p is more preferably 0.5 or less, as described above. is less than or equal to 0.24. This will be described with reference to FIG.
  • FIG. 21 is a diagram showing the relationship between this d/p and the fractional bandwidth of the acoustic wave device as a resonator.
  • the specific bandwidth when d/p>0.5, even if d/p is adjusted, the specific bandwidth is less than 5%.
  • the specific bandwidth when d/p ⁇ 0.5, the specific bandwidth can be increased to 5% or more by changing d/p within that range. can be configured. Further, when d/p is 0.24 or less, the specific bandwidth can be increased to 7% or more.
  • d/p when adjusting d/p within this range, a resonator with a wider specific band can be obtained, and a resonator with a higher coupling coefficient can be realized. Therefore, by setting d/p to 0.5 or less, it is possible to construct a resonator having a high coupling coefficient using the thickness-shear mode bulk wave.
  • FIG. 22 is a plan view of an elastic wave device that utilizes thickness-shear mode bulk waves.
  • elastic wave device 80 a pair of electrodes having electrode 3 and electrode 4 is provided on first main surface 2 a of piezoelectric layer 2 .
  • K in FIG. 22 is the crossing width.
  • the number of pairs of electrodes may be one. Even in this case, if d/p is 0.5 or less, bulk waves in the thickness-shear mode can be effectively excited.
  • the adjacent excitation region C is an overlapping region when viewed in the direction in which any of the adjacent electrodes 3 and 4 are facing each other. It is desirable that the metallization ratio MR of the mating electrodes 3, 4 satisfy MR ⁇ 1.75(d/p)+0.075. In that case, spurious can be effectively reduced. This will be described with reference to FIGS. 23 and 24.
  • the metallization ratio MR will be explained with reference to FIG. 16(b).
  • the excitation region C is the portion surrounded by the dashed-dotted line.
  • the excitation region C is a region where the electrode 3 and the electrode 4 overlap each other when the electrodes 3 and 4 are viewed in a direction perpendicular to the length direction of the electrodes 3 and 4, i.e., in a facing direction. 3 and an overlapping area between the electrodes 3 and 4 in the area between the electrodes 3 and 4 .
  • the area of the electrodes 3 and 4 in the excitation region C with respect to the area of the excitation region C is the metallization ratio MR. That is, the metallization ratio MR is the ratio of the area of the metallization portion to the area of the excitation region C.
  • MR may be the ratio of the metallization portion included in the entire excitation region to the total area of the excitation region.
  • FIG. 24 is a diagram showing the relationship between the fractional bandwidth and the amount of phase rotation of the spurious impedance normalized by 180 degrees as the magnitude of the spurious when a large number of acoustic wave resonators are configured according to this embodiment. be.
  • the ratio band was adjusted by changing the film thickness of the piezoelectric layer and the dimensions of the electrodes.
  • FIG. 24 shows the results obtained when a piezoelectric layer made of Z-cut LiNbO 3 is used, but the same tendency is obtained when piezoelectric layers with other cut angles are used.
  • the spurious is as large as 1.0.
  • the fractional band exceeds 0.17, that is, when it exceeds 17%, even if a large spurious with a spurious level of 1 or more changes the parameters constituting the fractional band, the passband appear within. That is, as in the resonance characteristics shown in FIG. 23, a large spurious component indicated by arrow B appears within the band. Therefore, the specific bandwidth is preferably 17% or less. In this case, by adjusting the film thickness of the piezoelectric layer 2 and the dimensions of the electrodes 3 and 4, the spurious response can be reduced.
  • FIG. 25 is a diagram showing the relationship between d/2p, metallization ratio MR, and fractional bandwidth.
  • various elastic wave devices having different d/2p and MR were constructed, and the fractional bandwidth was measured.
  • the hatched portion on the right side of the dashed line D in FIG. 25 is the area where the fractional bandwidth is 17% or less.
  • FIG. 26 is a diagram showing a map of fractional bandwidth with respect to Euler angles (0°, ⁇ , ⁇ ) of LiNbO 3 when d/p is infinitely close to 0.
  • FIG. The hatched portion in FIG. 26 is a region where a fractional bandwidth of at least 5% or more is obtained, and when the range of the region is approximated, the following formulas (1), (2) and (3) ).
  • Equation (1) (0° ⁇ 10°, 20° to 80°, 0° to 60° (1-( ⁇ -50) 2 /900) 1/2 ) or (0° ⁇ 10°, 20° to 80°, [180 °-60° (1-( ⁇ -50) 2 /900) 1/2 ] ⁇ 180°) Equation (2) (0° ⁇ 10°, [180°-30°(1-( ⁇ -90) 2 /8100) 1/2 ] ⁇ 180°, arbitrary ⁇ ) Equation (3)
  • the fractional band can be sufficiently widened, which is preferable.
  • the piezoelectric layer 2 is a lithium tantalate layer.
  • FIG. 27 is a front cross-sectional view of an elastic wave device having an acoustic multilayer film.
  • an acoustic multilayer film 82 is laminated on the second main surface 2 b of the piezoelectric layer 2 .
  • the acoustic multilayer film 82 has a laminated structure of low acoustic impedance layers 82a, 82c, 82e with relatively low acoustic impedance and high acoustic impedance layers 82b, 82d with relatively high acoustic impedance.
  • the thickness shear mode bulk wave can be confined in the piezoelectric layer 2 without using the cavity 9 in the elastic wave device 1 .
  • the elastic wave device 81 by setting d/p to 0.5 or less, it is possible to obtain resonance characteristics based on bulk waves in the thickness-shear mode.
  • the number of lamination of the low acoustic impedance layers 82a, 82c, 82e and the high acoustic impedance layers 82b, 82d is not particularly limited. At least one of the high acoustic impedance layers 82b, 82d should be arranged farther from the piezoelectric layer 2 than the low acoustic impedance layers 82a, 82c, 82e.
  • the low acoustic impedance layers 82a, 82c, 82e and the high acoustic impedance layers 82b, 82d can be made of appropriate materials as long as the acoustic impedance relationship is satisfied.
  • Examples of materials for the low acoustic impedance layers 82a, 82c, 82e include silicon oxide and silicon oxynitride.
  • Materials for the high acoustic impedance layers 82b and 82d include alumina, silicon nitride, and metals.
  • an acoustic multilayer film 82 shown in FIG. 27 may be provided as an acoustic reflection film between the support substrate and the piezoelectric layer. .
  • the support member and the piezoelectric layer may be arranged such that at least a portion of the support member and at least a portion of the piezoelectric layer face each other with the acoustic multilayer film 82 interposed therebetween.
  • low acoustic impedance layers and high acoustic impedance layers may be alternately laminated in the acoustic multilayer film 82 .
  • the acoustic multilayer film 82 may be an acoustic reflector in the elastic wave device.
  • d/p is preferably 0.5 or less, and 0.24 or less, as described above. is more preferable. Thereby, even better resonance characteristics can be obtained. Furthermore, in the crossover regions of the elastic wave devices of the first to seventh embodiments and modifications using thickness shear mode bulk waves, MR ⁇ 1.75 (d/p)+0.075 is preferably satisfied. In this case, spurious can be suppressed more reliably.
  • the piezoelectric layer in the elastic wave devices of the first to seventh embodiments and modified examples that utilize thickness shear mode bulk waves is preferably a lithium niobate layer or a lithium tantalate layer.
  • the Euler angles ( ⁇ , ⁇ , ⁇ ) of lithium niobate or lithium tantalate constituting the piezoelectric layer are within the range of the above formula (1), formula (2), or formula (3). is preferred. In this case, the fractional bandwidth can be widened sufficiently.
  • Piezoelectric films 201a, 201b ... First and second main surfaces 451, 452... First and second areas B... Arrows C... Excitation areas E1, E2... First and second edge areas F... Crossing area G1 , G2... First and second gap regions H... Central regions O1, O2... First and second points VP1... Virtual plane

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