WO2023036333A1 - 一种介电层表面平整的微流控芯片及制备方法、制作模具 - Google Patents

一种介电层表面平整的微流控芯片及制备方法、制作模具 Download PDF

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WO2023036333A1
WO2023036333A1 PCT/CN2022/118431 CN2022118431W WO2023036333A1 WO 2023036333 A1 WO2023036333 A1 WO 2023036333A1 CN 2022118431 W CN2022118431 W CN 2022118431W WO 2023036333 A1 WO2023036333 A1 WO 2023036333A1
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dielectric layer
layer
mold
chip
microfluidic chip
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PCT/CN2022/118431
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English (en)
French (fr)
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高维
胡丛余
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上海仁芯生物科技有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B01L3/502707—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the manufacture of the container or its components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B01L3/50273—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the means or forces applied to move the fluids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B01L3/502746—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the means for controlling flow resistance, e.g. flow controllers, baffles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/16—Making multilayered or multicoloured articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/17—Component parts, details or accessories; Auxiliary operations
    • B29C45/26—Moulds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
    • B01L2200/12—Specific details about manufacturing devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/06—Auxiliary integrated devices, integrated components
    • B01L2300/0627—Sensor or part of a sensor is integrated
    • B01L2300/0645—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/08—Geometry, shape and general structure
    • B01L2300/0887—Laminated structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/14—Means for pressure control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/16—Surface properties and coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/16—Surface properties and coatings
    • B01L2300/161—Control and use of surface tension forces, e.g. hydrophobic, hydrophilic
    • B01L2300/165—Specific details about hydrophobic, oleophobic surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2400/00—Moving or stopping fluids
    • B01L2400/04—Moving fluids with specific forces or mechanical means
    • B01L2400/0403—Moving fluids with specific forces or mechanical means specific forces
    • B01L2400/0415—Moving fluids with specific forces or mechanical means specific forces electrical forces, e.g. electrokinetic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2400/00—Moving or stopping fluids
    • B01L2400/04—Moving fluids with specific forces or mechanical means
    • B01L2400/0403—Moving fluids with specific forces or mechanical means specific forces
    • B01L2400/0415—Moving fluids with specific forces or mechanical means specific forces electrical forces, e.g. electrokinetic
    • B01L2400/0424—Dielectrophoretic forces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C2045/14852—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles incorporating articles with a data carrier, e.g. chips

Definitions

  • the invention relates to the technical field of microfluidic chip manufacturing, in particular to a microfluidic chip with a flat dielectric layer surface.
  • Microfluidics is a technology that precisely controls and manipulates microscale fluids, especially submicron structures, and has been developed in the directions of DNA chips, lab-on-a-chip, micro-sampling technology, and micro-thermodynamics technology.
  • Traditional microfluidic chips use MEMS micromachining technology to integrate devices such as microvalves, micropumps, microelectrodes, and microsensors on the chip.
  • microchannels are etched on the surface of the chip, and the separation is completed through the flow of fluid in the channel. , transportation, testing and other analysis processes.
  • Microfluidic chips can be further divided into continuous microfluidic chips and digital microfluidic chips.
  • the control object of the continuous microfluidic chip is a continuous fluid, while the control object of the digital microfluidic chip is a micro droplet.
  • Digital microfluidic chip is an emerging technology that has developed rapidly in the past 10 years. It is based on controlling the movement of single or multiple discrete droplets on the chip plane. A voltage is applied to the electrodes on the chip, thereby changing the solid-liquid surface tension between the dielectric layer of the chip and the droplets on it, and realizing the flexible movement of the droplets on the plane.
  • the dielectric layer of existing digital microfluidic chip products is difficult to avoid the uneven surface of the dielectric layer caused by the protrusion of the lower electrode. The uneven surface of the dielectric layer will cause certain obstacles to the flexible movement of droplets, which will affect the performance and quality of digital microfluidic chip products.
  • the existing digital microfluidic chip processing methods are difficult to effectively planarize the chip surface.
  • the existing technology belongs to the “positive sequence processing” process.
  • “Positive sequence processing” is characterized by processing various structural layers of digital microfluidic technology chips stacked from the substrate, such as "wire layer”, “insulation layer”, “electrode layer”, and “dielectric layer”. Since the “dielectric layer” is always the last layer of the "positive sequence processing” process stack, its flatness will be affected by the accumulation of the underlying structural layers.
  • the digital microfluidic chip prepared by the MEMS processing technology can be polished and smoothed by thinning and polishing the dielectric layer, the thinning and polishing process has certain limitations. When part of the dielectric layer is trapped in the gap between the electrode layers and the surface is lower than the surface of the electrode layer, the thinning and polishing process cannot be thinned to be completely flat. Moreover, polishing the prepared chip will not only increase the processing cost, but also reduce the yield rate, and will aggravate the problem of batch-to-batch variation to a certain extent. Although the digital microfluidic chip produced by PCB processing technology can alleviate the unevenness by filling the gap between the electrodes of the electrode layer, it cannot completely solve the problem of unevenness caused by "positive sequence processing".
  • the present invention provides a new microfluidic chip and its preparation method.
  • the microfluidic chip with a flat dielectric layer is prepared by a high pressure molding injection molding process to ensure a smooth and flat surface of the dielectric layer.
  • a microfluidic chip with a flat dielectric layer comprising a dielectric layer and a circuit layer, droplets move on the other side of the dielectric layer opposite to the circuit layer, and the side of the dielectric layer on which the circuit layer is not formed for a flat surface.
  • a flat surface means that the gap depth between two adjacent electrodes is smaller than the maximum value among the roughnesses Ry (Rz) of the surfaces of the two electrodes.
  • the flatness of the flat surface is X min /Y max ⁇ 10.
  • the distance between the electrodes on the chip is represented by G1, G2...Gn
  • n is the total number of all electrode gaps on the chip
  • X min is the minimum value among G1, G2...Gn.
  • the roughness of the electrode surface on the chip is represented by Ry1, Ry2...Rym
  • m is the total number of electrodes on the chip
  • Y max is the maximum value among Ry1, Ry2...Rym.
  • a circuit layer is printed or coated on the dielectric layer, that is, the dielectric layer is prepared first, and then the circuit layer is sequentially arranged on the dielectric layer.
  • a dielectric layer is provided on the circuit layer, that is, the circuit layer of the digital microfluidic technology chip is stacked from the substrate by using a positive sequence processing technology, and a dielectric layer is provided on the last circuit layer structure.
  • a dielectric layer with a smooth surface can be obtained by flattening the side of the chip dielectric layer on which the circuit layer is not formed using a manufacturing mold with a dielectric layer molding surface.
  • the dielectric layer is used as a base material for preparing a circuit layer, and a circuit layer including an electrode layer is formed on the dielectric layer by printing, printing or etching, and the circuit layer is used to generate a driver located at the The electric field of the micro-droplet on the side opposite to the circuit layer on the dielectric layer.
  • the technical scheme adopted in the present invention directly forms the required circuit layer on the dielectric layer, so the circuit layer and the dielectric layer can be fully contacted, so that the circuit layer, the dielectric layer, and the micro-liquid on the side opposite to the circuit layer on the dielectric layer The three form an equivalent plate capacitor.
  • the dielectric layer can effectively avoid the charge exchange between the circuit layer and the micro-droplet, which will cause electrolysis of the micro-droplet.
  • the dielectric layer attached to the circuit layer will also be uneven and there will be gaps between the electrodes, which will affect the flow of micro-droplets. move.
  • the technical scheme adopted in the present invention forms a dielectric layer first, and then forms a circuit layer on the dielectric layer, so that unevenness and gaps will not occur on the side of the dielectric layer opposite to the circuit layer, and the side of the dielectric layer is utilized
  • the flat surface carries the micro-droplets, so that the micro-droplets are not blocked when driven and move smoothly.
  • the circuit layer includes an electrode layer and a wire layer, and the electrode layer and the wire layer are in the same layer in the form of co-layering.
  • the electrode layer consists of multiple single electrodes designed on demand. When the micro-droplets are located on some single electrodes (hereinafter referred to as "upper electrodes"), the periphery of the micro-droplets will contact other single electrodes in different directions (hereinafter referred to as “lower electrodes"). When the lower electrodes surrounding the droplet are not powered, the droplet will maintain its current position on the upper electrode.
  • the wire layer is composed of multiple wires designed according to the needs, connecting the single electrodes and the electrodes with the external voltage, so that the voltage can be applied to each single electrode.
  • the co-layer design enables full contact between the electrode layer and the wire layer, ensuring that each single electrode can have the voltage to drive micro-droplets, and the electrode layer and the wire layer can be formed at the same time, which reduces the difficulty of the process and reduces the production cost.
  • an electrode layer, an insulating layer and a wire layer are sequentially formed on the dielectric layer, and the electrode layer, the insulating layer and the wire layer together constitute a circuit layer and form a multilayer structure in a stacked form.
  • the common layer of electrode layer and wire layer is prone to short circuit, which affects the use of the chip, and it is difficult to realize the process. Therefore, the electrode layer and circuit layer are stacked and formed, and an insulating layer is added between the two layers. Two layers of isolation.
  • the electrode layer is formed on the dielectric layer, and the electrode layer is separated from the wire layer by the insulating layer, so that the micro-droplets on the side opposite to the circuit layer on the dielectric layer will not be affected by the wire layer when driven by the electrode layer, and can accurately Move in the direction of the applied voltage.
  • the thickness of the electrode layer is 0.1-100um
  • the thickness of the wire layer is 0.1-100um.
  • the thickness of the electrode layer is 0.1-100um, so that it can generate enough voltage to drive micro-droplets
  • the thickness of the wire layer is 0.1-100um, so that it can withstand enough external voltage and transmit it to the electrode layer.
  • the film is a film with a double-layer structure, wherein one layer is a functional film used as a dielectric layer, and the other layer is a release film.
  • the circuit layer is formed on the side opposite to the release film on the functional film used as the dielectric layer, and the release film can protect the functional film from being damaged during the process of forming the circuit layer.
  • a sufficiently thin dielectric layer can effectively reduce the initial voltage of dielectric wetting, increase the voltage difference between the two sides of the micro-droplet, make the micro-droplet more sensitive to the voltage drive, and improve the practical application significance of the chip, but At the same time, the thinner the dielectric layer, the weaker the strength, and it is easy to cause damage during the production process.
  • the double-layer structure film increases the overall thickness of the film, so that the circuit layer can be formed on the dielectric layer without causing damage to it, and overcomes the problem caused by the dielectric layer. Process defects caused by layers that are too thin.
  • the film is a film with a single-layer structure.
  • the film uses a material with a high dielectric constant, the voltage required to drive the micro-droplet to move can be effectively reduced, which is beneficial to the driving of the micro-droplet.
  • an over-thin dielectric layer is easily damaged during the formation of the circuit layer. Therefore, the selection of a single-layer high-dielectric film with an appropriate thickness can make the chip more sensitive while reducing the difficulty of the process and reducing the production cost.
  • the side of the dielectric layer on which the circuit layer is not formed is coated with a hydrophobic layer.
  • a hydrophobic layer On the side of the thin film of the dielectric layer that is not formed with the circuit layer, apply a hydrophobic layer, make the micro-droplets contact the hydrophobic layer, increase the contact angle of the micro-droplets on the chip surface, and when applying a voltage to the chip, The greater difference in contact angles on both sides of the micro-droplet is conducive to the generation of unbalanced forces inside the micro-droplet, thereby promoting the driving of the micro-droplet.
  • the contact surface between the micro-droplet and the chip surface becomes smaller, making the chip surface smoother and reducing the frictional resistance that needs to be overcome to drive the micro-droplet.
  • the technical solution adopted in the present invention provides a new type of process mold.
  • the process mold includes: a first mold and a second mold, and the first mold is connected with a first nozzle.
  • the second mold is provided with a flat dielectric layer molding surface.
  • the middle part forms a casting cavity
  • the side of the chip dielectric layer that is not formed with the circuit layer faces the dielectric layer molding surface of the second mold, and the injection molding liquid enters the casting from the first nozzle
  • the cavity is used to extrude the microfluidic chip, and the injection molding liquid is cooled and combined with the chip to form.
  • the side of the chip dielectric layer where the circuit layer is not formed is matched with the molding surface of the dielectric layer to form a flat surface of the chip dielectric layer.
  • the injection molding liquid should be a low-melting injection molding material, and its melting point should not be higher than 200°C. It is further preferred that the injection molding liquid is a resin material.
  • the molding process is as follows: the microfluidic chip is placed between the first and second molds, and the dielectric layer of the chip does not form the circuit
  • a detachable release film is provided on one side of the layer, the circuit layer of the chip faces the first mold, and the release film faces the second mold.
  • the first and second molds are separated, and the release film is separated from the dielectric layer of the chip to obtain the microfluidic chip with a flat dielectric layer of the present invention.
  • a microfluidic chip with a flat dielectric layer during the preparation process, the dielectric layer of the printed circuit layer is placed between the first and second molds, and the circuit layer faces the first mold , the dielectric layer faces the second mold. Lay the first and second molds together, and inject the injection molding liquid from the first nozzle. Using the high-pressure liquid resin injected from the first nozzle, the dielectric layer and the molding surface of the dielectric layer are bonded and evenly stressed, and finally a dielectric layer with a flat surface is obtained. In this process, through reasonable setting of the casting cavity of the first mold and the second mold, an injection-molded base or shell can be obtained.
  • the technical solution adopted in the present invention adopts a high-pressure injection molding process. While packaging, the molding surface of the dielectric layer and the dielectric layer of the chip The surfaces are matched and extruded so that the chip dielectric layer has a completely flat surface after the package is completed.
  • a chip preparation and packaging method provided by the present invention is applicable to any flexible digital microfluidic chip, which can complete the packaging process while ensuring the surface flatness of the dielectric layer, effectively improving the performance and quality of the product, and greatly Reduce the manufacturing cost of the chip.
  • FIG. 1 is a schematic structural diagram of a microfluidic chip in the prior art.
  • Fig. 2 is a schematic structural diagram of a microfluidic chip according to a specific embodiment of the present invention.
  • Fig. 3 is a schematic structural diagram of a microfluidic chip according to another specific embodiment of the present invention.
  • Fig. 4 is a process flow diagram of a specific embodiment of the present invention.
  • FIG. 5 is a linear scanning diagram of the surface contours of the chips of Example 3 and Example 6.
  • a microfluidic chip with a flat dielectric layer surface comprising a dielectric layer 1 and a circuit layer 2 printed on the dielectric layer 1, the side of the dielectric layer 1 where the circuit layer is not formed is Liquid control surface9.
  • the liquid control surface 9 is the surface on which the chip drives the liquid droplet 8 .
  • the method of forming the flat liquid control surface 9 is to flatten one side of the liquid control surface 9 of the chip dielectric layer with a production mold with a dielectric layer molding surface to obtain a flat dielectric layer with a liquid control surface 9 .
  • the dielectric layer 1 is used as the base material for preparing the circuit layer 2, and the circuit layer 2 including the electrode layer is formed on the dielectric layer 1 by etching, and the circuit layer 2 is used to drive the Droplet 8 on the side opposite to the circuit layer on 1. Furthermore, we also apply a hydrophobic layer 5 on the liquid-controlling surface 9 of the dielectric layer.
  • a microfluidic chip with a flat dielectric layer comprising a circuit layer 2 and a dielectric layer 1 disposed on the circuit layer 2, the side of the dielectric layer 1 where the circuit layer is not formed is a control liquid surface9.
  • the liquid control surface 9 is the surface on which the chip drives the liquid droplet 8 .
  • the method of forming the flat liquid control surface 9 is to flatten one side of the liquid control surface 9 of the chip dielectric layer with a production mold with a dielectric layer molding surface to obtain a flat dielectric layer with a liquid control surface 9 .
  • Embodiment 3 microfluidic chip (chip of the present invention) prepared by embedded film injection molding process (IMD) in the mold
  • a microfluidic chip with a flat dielectric layer surface comprising a dielectric layer 1 and a circuit layer 2 printed on the dielectric layer 1, the side of the dielectric layer 1 where the circuit layer is not formed is Liquid control surface9.
  • a hydrophobic layer 5 is coated on the liquid control surface 9 of the dielectric layer 1 .
  • the circuit layer 2 includes an electrode layer, an insulating layer, and a wire layer sequentially formed on the dielectric layer 1 , and the electrode layer, the insulating layer, and the wire layer together constitute the circuit layer 2 and are formed in a stacked multilayer structure.
  • the liquid control surface 9 of the chip dielectric layer 1 is bonded to the molding surface 44 of the dielectric layer, and the liquid resin enters from the first nozzle 43 on the same side as the circuit layer 2
  • the casting cavity is filled with the casting cavity, and the microfluidic chip is squeezed to make it adhere to the molding surface 44 of the dielectric layer.
  • a mold for making a microfluidic chip with a flat dielectric layer comprising: a first mold 41 and a second mold 42 , the first mold 41 is connected with a first nozzle 43 .
  • the second mold 42 is provided with a dielectric layer forming surface 44 .
  • the middle part forms a casting cavity
  • the liquid control surface 9 of the dielectric layer 1 faces the dielectric layer molding surface 44 of the second mold 42
  • the injection molding liquid 6 enters from the first nozzle 43
  • the casting chamber extrudes the microfluidic chip, and the molding surface 44 of the dielectric layer is molded in cooperation with the side of the dielectric layer 1 where the circuit layer is not formed.
  • a mold for making a microfluidic chip with a flat dielectric layer comprising: a first mold 41 and a second mold 42, the first mold 41 is connected with a first nozzle 43, and the first mold 41 is provided with a base The space cavity 411 , the second mold 42 is provided with a dielectric layer molding surface 44 .
  • the middle part forms a casting cavity, in which the microfluidic chip is arranged, and the liquid control surface 9 of the dielectric layer 1 faces the dielectric layer molding surface 44 of the second mold 42, and injection molding
  • the liquid 6 enters the casting cavity from the first nozzle 43, squeezes the microfluidic chip, and the dielectric layer forming surface 44 cooperates with the liquid control surface 9 of the dielectric layer 1 to form a flat liquid control surface 9.
  • the first mold 41 and the second mold 42 are separated, and the outer side of the circuit layer 2 forms the injection base 7 .
  • the microfluidic chip with a flat dielectric layer of the present invention can be obtained.
  • the technical scheme adopted in the present invention squeezes the microfluidic chip located in the process mold through the injection molding liquid, so that the liquid control surface 9 of the dielectric layer 1 of the microfluidic chip is evenly stressed, and on the molding surface of the dielectric layer With the cooperation, a flat surface is formed.
  • Example 6 Microfluidic chip (film chip) prepared by laminating process of flexible film and hard substrate
  • a microfluidic chip comprising a dielectric layer 1 and a circuit layer 2 arranged on the dielectric layer 1 , the side of the dielectric layer 1 where the circuit layer 2 is not formed is a liquid control surface 9 .
  • the liquid control surface 9 of the dielectric layer 1 is coated with a hydrophobic layer 5 .
  • the circuit layer 2 includes an electrode layer, an insulating layer, and a wire layer sequentially formed on the dielectric layer 1 , and the electrode layer, the insulating layer, and the wire layer together constitute the circuit layer 2 and are formed in a stacked multilayer structure.
  • the circuit layer of the microfluidic chip and the tape surface of the substrate are attached to each other.
  • Embodiment 7 Comparison of chip surface roughness between embodiment 3 and embodiment 6
  • the film-attached chip uses the same circuit pattern as the chip of the present invention.
  • the size of a single driving electrode in the circuit pattern is a square of 1.76mm*1.76mm, and the pitch is 0.05mm.
  • the liquid control surface 9 of the microfluidic chip in Example 3 has continuous, mild, and small surface bulges caused by thermal expansion and contraction caused by the injection molding process, but it is basically within +/-10 of the process. within microns of error.
  • the above analysis can show that the liquid control surface 9 of the chip of Example 3 has no surface unevenness caused by the protruding structure of the circuit layer 2 .
  • the surface of the microfluidic chip in Example 6 has bulges caused by electrode protrusions, and the bulges are basically regularly distributed at intervals of 1.8 mm, and the height difference is between 3 and 8 microns.
  • the circuit layer thickness of the circuit layer 2 in Example 6 is about 5 microns, and the sum of the electrode size and spacing is 1.81 mm, it can basically be judged that the intermittent bulging shape of the chip’s liquid-controlling surface 9 in Example 6 is a circuit. caused by electrode protrusions in the layer. From the above analysis, it can be judged that the gap between adjacent electrodes in Example 6 has a depth of 3 to 8 microns.
  • the above analysis also shows that the liquid control surface 9 of Example 6 has surface unevenness caused by the structure of the circuit layer 2 (mainly the structure of the electrode layer).
  • the flatness of the surface of the dielectric layer of the microfluidic chip described in Example 3 of the present invention is higher than that of the surface of the dielectric layer of the film-attached microfluidic chip described in Example 6.
  • the film-attached chip uses the same circuit pattern as the chip of the present invention.
  • the size of a single driving electrode in the circuit pattern is a square of 1.76mm*1.76mm, and the pitch is 0.05mm.
  • the distance between the electrode plate and the ground plate is 275 microns +/- 25 microns.
  • the size of the saline droplets is 1 microliter.
  • the power signal for driving the electrodes is: 0% offset, 1 kHz, 80V peak to peak square wave. Through repeated experiments and calibration, it was determined that the voltage of the above power signal was the minimum voltage to stably drive 1 microliter of 1M NaCl saline droplet.
  • the flatness of the liquid control surface 9 of the microfluidic chip described in Example 3 of the present invention is higher than that of the film-mounted microfluidic chip described in Example 6.
  • the microfluidic chip described in Example 3 of the present invention has a higher efficiency in controlling liquid droplets 8 than the film-attached microfluidic chip described in Example 6.

Abstract

一种具有平整介电层外表面的微流控芯片及其制备方法。微流控芯片包括介电层（1）和电路层（2），介电层（1）未形成电路层（2）的一侧为平整表面。制备方法包括在介电层（1）上依次设置电路层（2），并利用介电层成型面（44）对介电层（1）表面压平以确保介电层（1）表面平整。

Description

一种介电层表面平整的微流控芯片及制备方法、制作模具 技术领域
本发明涉及微流控芯片制造技术领域，特别涉及一种具有平整介电层表面的微流控芯片。
背景技术
微流控，是一种精确控制和操控微尺度流体，尤其特指亚微米结构的技术，在DNA芯片、芯片实验室、微进样技术和微热力学技术等方向得到了发展。传统的微流控芯片，利用MEMS微加工技术在芯片上集成微阀、微泵、微小电极和微小传感器等器件，同时在芯片表面刻蚀出微型沟道，通过流体在沟道中的流动完成分离、运输、检测等分析过程。微流控芯片又可分为连续微流控芯片和数字微流控芯片。其中连续微流控芯片的操控对象为连续流体，而数字微流控芯片的操控对象为微液滴。数字微流控芯片(DMF)是近10年来发展迅猛的一种新兴技术，以控制实现单个或多个离散液滴在芯片平面上运动为基础，利用液滴表面的电湿润现象，通过向芯片上的电极上施加电压，从而改变芯片介电层与其上液滴的固液表面张力，实现液滴在平面上的灵活运动。现有的数字微流控芯片产品的介电层难以避免因下方电极突起而造成的介电层表面的凹凸不平。介电层表面凹凸不平会对液滴灵活运动造成一定障碍，影响数字微流控芯片产品的性能和质量。
现有的数字微流控芯片加工方式难以对芯片表面进行有效的平整化处理。现有的技术无论是PCB加工技术还是MEMS加工技术皆属于“正序加工”工艺。“正序加工”的特征为，加工从基板开始堆叠数字微流控技术芯片的各个结构层，例如“电线层”，“绝缘层”，“电极层”，“介电层”。由于“介电层”永远是“正序加工”工艺堆叠的最后一层，所以他的平整度会受下方各个结构层累计影响。
通过MEMS加工工艺制备的数字微流控芯片虽然可以通过减薄抛光介电层将打磨平整，但是减薄抛光工序有一定的限制性。当部分介电层陷入电极层之间的间隙，且表面低于电极层表面时，减薄抛光工序则无法减薄至完全平整。而且，将制备好的芯片进行抛光处理，不仅增加加工成本，也降低良品率，并且会造成一定程度的加重批间差的问题。通过PCB加工技术生产的数字微流控芯片虽然可以通过填充电极层的电极之间的缝隙来减轻不平整性，但无法彻底解决“正序加工”带来的凹凸不平的问题。近年来，一种新型柔性数字微流控芯片采用了“倒序加工”的新方法。这种“倒序加工“的方法通过先制备介电层，而后在依次堆叠电极层，绝缘层，电线层等电路结构。由于“倒序加工”的第一层是介电层，也就避免了累计堆叠造成的结构性凹凸不平。虽然“倒序加工”的数字微流控芯片表面平整但是柔软。其柔软的特性造成这种数字微流控芯片封装在硬质的基板上时，表面容易凹陷。最终，封装好的这种数字微流控芯片还是会有一定程度凹凸不平并造成液滴移动不畅，影响最终产品的性 能和质量。
发明内容
为解决上述问题，本发明提供一种新的微流控芯片及其制备方法，由高压成型注塑工艺制备具有平整介电层的微流控芯片，以确保介电层表面光滑平整。
一种介电层表面平整的微流控芯片，包括介电层和电路层，液滴在介电层相对电路层的另一面移动，所述介电层的未形成所述电路层的一侧为平整表面。
平整表面是指两个相邻电极间的间隙深度小于两个电极表面的粗糙度Ry(Rz)中的最大值。
进一步的，所述平整面的平整度X min/Y max≧10。其中，芯片上电极间的距离用G1、G2……Gn来表示，n为芯片上所有电极缝隙的总数，其中X min为G1、G2……Gn中的最小值。芯片上电极表面的粗糙度用Ry1、Ry2……Rym来表示，m为芯片上电极的总数，其中Y max为Ry1、Ry2……Rym中的最大值。
进一步的，所述平整面的平整度X min/Y max≧100。
进一步的，介电层上印刷或者涂布有电路层，即通过先制备介电层，而后在介电层上依次设置电路层。
进一步的，在电路层上设置介电层，即采用正序加工工艺，从基板开始堆叠数字微流控技术芯片的各电路层，在最后一层电路层结构上设置介电层。
进一步的，用带有介电层成型面的制作模具对芯片介电层未形成所述电路层的一侧压平处理可以得到表面平整的介电层。
进一步的，所述介电层作为制备电路层的的基底材料，在所述介电层上利用印刷、打印或者蚀刻的方式形成包含电极层的电路层，所述电路层用于产生驱动位于所述介电层上与所述电路层相对一面的微液滴的电场。本发明采用的技术方案直接在介电层上形成所需电路层，所以电路层与介电层能够充分接触，使得电路层、介电层、位于介电层上与电路层相对一面的微液滴三者构成一个等效的平板电容。当对电路层施加电压时，介电层可以有效地避免电路层和微液滴之间的电荷交换而导致微液滴发生电解现象。在传统芯片中先形成电路层而后形成介电层的方案中，因电路层本身高低不平，附在电路层上方的介电层亦会高低不平并在电极间留有间隙，影响微液滴的移动。本发明所采用的技术方案先形成介电层，再在介电层上形成电路层，因此介电层上、与电路层相对的一面不会产生高低不平和间隙，利用介电层这一侧平整的表面承载微液滴，使微液滴在受到驱动时不被阻挡，顺畅移动。
进一步的，所述电路层包括电极层以及电线层，电极层与电线层以共层的形式处于同一层。电极层由按需设计的多个单电极组成。当微液滴位于某些单电极(以下称为“上位电极”) 上时，微液滴的周缘部会接触到另外的、数个不同方向的单电极(以下称为“下位电极”)。当微液滴周围的下位电极未被加上电压时，微液滴会在上位电极上保持当前位置。当某一方向的下位电极被施加电压且上位电极和其他方向的下位电极未被施加电压时，微液滴部分接触加压的下位电极的接触角θ将减小，而液滴其他部位的接触角维持不变，因而使得液滴产生向一侧铺展的趋势，施加的电压越大，则接触角变化的越大，当电压大到一定程度时，液滴两侧会产生非常大的接触角差异，则液滴向一侧铺展的趋势更强烈，此时液滴内部会出现一个非常大的压力差，当这个压力差达到一定阈值时，液滴就会向加压的下位电极移动，实现微液滴位移的操作，微液滴现在所处的电极为新上位电极。电线层由按需设计的多条电线组成，将单电极之间、电极与外部电压连接，使电压能够施加在各个单电极上。采用共层的设计使电极层与电线层能够充分接触，确保每个单电极可以具有驱动微液滴的电压，且电极层与电线层可以同时形成，降低了工艺难度，减少了生产成本。
进一步的，在介电层上依次形成电极层、绝缘层以及电线层，电极层、绝缘层以及电线层共同构成电路层且以堆叠的形式形成为多层结构。对于较复杂的电路层设计，电极层与电线层共层容易发生短路，影响芯片的使用，且工艺上难以实现，因此将电极层与电路层堆叠形成，并在两层之间加入绝缘层使两层隔离。电极层形成在介电层上，通过绝缘层将电极层与电线层隔离，使得位于介电层上与电路层相对一面的微液滴受到电极层的驱动时不会被电线层影响，能够准确向施加电压的方向移动。
进一步的，电极层的厚度为0.1-100um，电线层的厚度为0.1-100um。电极层的厚度为0.1-100um，使其能够产生足够的电压驱动微液滴，电线层的厚度为0.1-100um，使其能够承受足够的外部电压同时传输给电极层。
进一步的，薄膜为双层结构的薄膜，其中一层为用作介电层的功能膜，另一层为离型膜。电路层形成在用作介电层的功能膜上与离型膜相反的一面，离型膜可以保护功能膜，在形成电路层的过程中不会受损。且足够薄的介电层可以有效地降低产生介电润湿的起始电压，增大微液滴两侧的电压差，使微液滴受到电压驱动更灵敏，提高芯片的实际应用意义，但同时介电层越薄强度越弱，在生产过程中易造成破损，双层结构的薄膜增加了薄膜的整体厚度，使电路层能够形成在介电层上而不对其造成损害，克服因介电层过薄而产生的工艺缺陷。
进一步的，薄膜为单层结构的薄膜。当薄膜使用高介电常数的材料时，可以有效降低驱动微液滴使之移动所需的电压，有利于微液滴的驱动。但过薄的介电层在电路层形成过程中易受损，因此选用厚度适宜的单层高介电薄膜能够使芯片具有灵敏性同时降低工艺难度，降低了生产成本。
进一步的，所述介电层未形成所述电路层的一侧涂布有疏水层。在作为介电层的薄膜未 形成有所述电路层的一面上涂布疏水层，使微液滴与疏水层接触，增大微液滴在芯片表面的接触角，当对芯片施加电压时，微液滴两侧的接触角差异更大，有利于微液滴内部不平衡力的产生，从而促进微液滴的驱动。且微液滴与芯片表面的接触面变小，使芯片表面更光滑，减小了驱动微液滴所需克服的摩擦阻力。
进一步的，为了让本发明中微流控芯片形成平整的介电层外表面，本发明采用的技术方案提供一种新型工艺模具。所述工艺模具包括：第一模具、第二模具，所述第一模具连接有第一喷嘴。所述第二模具上设置有平整的的介电层成型面。第一模具、第二模具贴合后中部形成铸造腔，所述芯片介电层的未形成所述电路层的一侧朝向第二模具的介电层成型面，注塑液自第一喷嘴进入铸造腔，挤压微流控芯片，注塑液冷却后与芯片结合成型。芯片介电层未形成所述电路层的一侧与介电层成型面匹配形成平整的芯片介电层表面。
进一步的，所述注塑液应当选用低熔点注塑材料，其熔点不应高于200℃，进一步优选的是，所述注塑液为树脂材料。
进一步的，为了保护本发明中微流控芯片的介电层表面，成型流程如下：将所述微流控芯片置于第一、第二模具间，所述芯片介电层未形成所述电路层的一侧上设有可分离的离型膜，所述芯片的电路层朝向第一模具，离型膜朝向第二模具。将第一、第二模具贴合，自第一喷嘴注塑注塑液。待冷却后将第一、第二模具分开，将所述离型膜自所述芯片介电层分离，即可得到本发明具有平整介电层的微流控芯片。
本发明的一种介电层表面平整的微流控芯片，其在制备过程中，将所述印刷电路层的介电层置于第一、第二模具间，所述电路层朝向第一模具，介电层朝向第二模具。将第一、第二模具贴合，自第一喷嘴注塑注塑液。利用自第一喷嘴注塑进的高压液态树脂，使得介电层与介电层成型面贴合均匀受力，最终得到具有平整表面的介电层。在此过程中，通过对第一模具、第二模具的铸造腔的合理设置，可以得到注塑成型的底座或者外壳。
本发明提供的技术方案具有以下有益效果：
1.对于“正序加工”带来的介电层表面凹凸不平，利用介电层成型面将芯片介电层表面压平，可以尽可能的提高芯片介电层表面的平整度。
2.对于“倒序加工”后由于进行封装所带来的介电层表面凹凸不平，本发明采用的技术方案采用高压注塑成型工艺，在封装的同时，利用介电层成型面与芯片介电层表面相配合挤压，使得封装完成后芯片介电层具有完全平整的表面。
3.本发明提供的一种芯片制备及封装方法适用于任何柔性的数字微流控芯片，在确保介电层表面平整度的同时能够完成封装工艺，有效的提高了产品的性能和质量，大大的降低芯片的生产制造成本。
附图说明
图1为现有技术中微流控芯片的结构示意图。
图2为本发明的一种具体实施例微流控芯片的结构示意图。
图3为本发明的另一种具体实施例微流控芯片的结构示意图。
图4为本发明的一种具体实施例工艺流程图。
附图说明：1-介电层，2-电路层，8-液滴，7-底座，5-疏水层，3-离型膜，41-第一模具，411-底座空间腔，42-第二模具，43-第一喷嘴，6-注塑液，9-控液表面。
图5为实施例3与实施例6芯片的表面轮廓线性扫描图。
具体实施方式
下面结合附图，对本发明的技术方案做进一步解释说明。
实施例1：
一种介电层表面平整的微流控芯片，包括介电层1及印刷在所述介电层1上的电路层2，所述介电层1的未形成所述电路层的一侧为控液表面9。控液表面9为芯片驱动液滴8的表面。形成平整的所述控液表面9的方法为用带有介电层成型面的制作模具对芯片介电层的控液表面9的一侧压平处理可以得到控液表面9平整的介电层。
所述介电层1作为制备电路层2的基底材料，在所述介电层1上利用蚀刻的方式形成包含电极层的电路层2，所述电路层2用于驱动位于所述介电层1上与所述电路层相对一面的液滴8。此外，我们还在介电层的控液表面9上涂布疏水层5。
实施例2：
一种介电层表面平整的微流控芯片，包括电路层2和设置在所述电路层2上的介电层1，所述介电层1的未形成所述电路层的一侧为控液表面9。控液表面9为芯片驱动液滴8的表面。形成平整的所述控液表面9的方法为用带有介电层成型面的制作模具对芯片介电层的控液表面9的一侧压平处理可以得到控液表面9平整的介电层。
实施例3:模具内嵌入薄膜注塑工艺(IMD)制备的微流控芯片(本发明芯片)
一种介电层表面平整的微流控芯片，包括介电层1及印刷在所述介电层1上的电路层2，所述介电层1的未形成所述电路层的一侧为控液表面9。所述介电层1的控液表面9上涂布疏水层5。所述电路层2包括依次形成在介电层1上的电极层、绝缘层以及电线层，电极层、绝缘层以及电线层共同构成电路层2且以堆叠的形式形成为多层结构。将上述微流控芯片放入制作模具的铸造腔中，芯片介电层1的控液表面9与介电层成型面44贴合，液态树脂自与电路层2同侧的第一喷嘴43进入铸造腔并充满铸造腔，对微流控芯片进行挤压使其贴紧 介电层成型面44。注塑完成后电路层2一侧形成树脂底座完成封装，介电层1具有平整的控液表面9。经测定，本发明微流控芯片挤压后介电层1表面的Xmin＝45um，Ymax＝0.4111um。
实施例4：
一种介电层表面平整的微流控芯片制作模具，包括：第一模具41、第二模具42，所述第一模具41连接有第一喷嘴43。所述第二模具42上设置有介电层成型面44。第一模具41、第二模具42贴合后中部形成铸造腔，所述介电层1的控液表面9朝向第二模具42的介电层成型面44，注塑液6自第一喷嘴43进入铸造腔，挤压微流控芯片，介电层成型面44与介电层1未形成所述电路层的一侧相配合成型。
实施例5：
一种介电层表面平整的微流控芯片制作模具，包括：第一模具41、第二模具42，所述第一模具41连接有第一喷嘴43，所述第一模具41上设置有底座空间腔411，所述第二模具42上设置有介电层成型面44。第一模具41、第二模具42贴合后中部形成铸造腔，微流控芯片设置于其中，所述介电层1的控液表面9朝向第二模具42的介电层成型面44，注塑液6自第一喷嘴43进入铸造腔，挤压微流控芯片，介电层成型面44与介电层1的控液表面9相配合成型得到平整的控液表面9。待冷却后将第一模具41、第二模具42分开，电路层2外侧形成注塑底座7。即可得到本发明具有平整介电层的微流控芯片。
为了保护介电层表面在高温高压注塑过程中不被破坏，我们在注塑前在介电层1的控液表面9设置一层离型膜3。
本发明所采用的技术方案通过注塑液对位于工艺模具内的微流控芯片进行挤压，使得微流控芯片的介电层1的控液表面9均匀的受力，在介电层成型面的配合下形成平整表面。
实施例6：柔性薄膜与硬基板贴合工艺制备的微流控芯片(贴膜芯片)
一种微流控芯片，包括介电层1和设置在所述介电层1上的电路层2，所述介电层1的未形成所述电路层2的一侧为控液表面9。所述介电层1的控液表面9涂布疏水层5。所述电路层2包括依次形成在介电层1上的电极层、绝缘层以及电线层，电极层、绝缘层以及电线层共同构成电路层2且以堆叠的形式形成为多层结构。使用表面平整的玻璃或其他带有一定刚性的基板，将双面胶带平整的贴于基板上。将上述微流控芯片的电路层面与基板胶带面相互贴合。并放入贴合机内排泡与压实，完成后得到带有硬基板的微流控芯片；经测定，介电层表面Xmin＝45um，Ymax＝5.401um。
实施例7：实施例3与实施例6芯片表面粗糙度对比
7.1芯片表面轮廓线性扫描对比
实验条件：
●贴膜芯片与本发明芯片使用相同的电路图案。
●电路图案中的单个驱动电极大小为1.76毫米*1.76毫米的方块，间距为0.05毫米。
对实施例3的微流控芯片和贴膜芯片的表面各选6个位置和方向进行15至20毫米的线性扫描，扫描结果见图5。
由图5可见，实施例3的微流控芯片的控液表面9有因注塑工艺产生的热胀冷缩产生的连续的、缓和的、小幅的表面隆起，但基本在工艺的+/-10微米误差范围内。上述分析可以说明实施例3的芯片的控液表面9并无因电路层2的结构突出造成的表面不平整。
由图5可见，实施例6的微流控芯片表面则有因电极突起而产生的鼓包且鼓包基本以1.8毫米的间隔规律分布，高低落差在3至8微米之间。由于实施例6的电路层2的电路层厚度大约为5微米，且电极大小与间距之和为1.81毫米，基本可以判断实施例6中的芯片的控液表面9特有间歇性鼓包的形态为电路层中的电极突起造成的。上述分析可以判断实施例6中的相邻电极间隙深度为3至8微米。上述分析也说明了，实施例6的控液表面9有因电路层2的结构(主要为电极层结构)造成的表面不平整。
综上所述，本发明实施例3所述的微流控芯片的介电层表面的平整度要高于实施例6所述的贴膜微流控芯片的介电层表面平整度。
7.2液滴8完全覆盖单个电极所需的驱动时间对比
实验条件：
●贴膜芯片与本发明芯片使用相同的电路图案。
●电路图案中的单个驱动电极大小为1.76毫米*1.76毫米的方块，间距为0.05毫米。
●电极板与地极板的间距为275微米+/-25微米。
●使用1M NaCl的盐水。
●盐水液滴的大小为1微升。
●在电极板与地极板的液滴控制腔室中填充1cps的硅油。
●驱动电极的电源信号为：0％偏移的、1kHz的、80V peak to peak的方波。经反复实验和校准确定上述电源信号的电压为稳定驱动1微升的1M NaCl盐水液滴的最小电压。
●反复驱动50次。
测试结果如表1。
表1“液滴完全覆盖电极所需的驱动时间”
芯片 最小(s) 最大(s) 平均(s)
实施例6芯片 3 8 5.7
实施例3芯片 1 2 1.2
由表1测试结果可见，本发明实施例3的芯片其液滴完全覆盖电极所需时间显著低于实施例6的贴膜芯片上液滴完全覆盖电极所需时间。
结合实施例7.1和7.2中的数据可以有利地证明由于本发明实施例3所述的微流控芯片的控液表面9平整度高于实施例6所述的贴膜微流控芯片的控液表面9的平整度，本发明实施例3所述的微流控芯片控制液滴8的效率要高于实施例6所述的贴膜微流控芯片的控液效率。
以上详细描述了本发明的设计思路，本发明的技术方案不限于上述实施方式中的具体细节，在本发明的技术构思范围内，可以对本发明的技术方案进行多种变换，这些简单变型均属于本发明的保护范围。

Claims (6)

  1. 一种介电层表面平整的微流控芯片，包括介电层和电路层，其特征在于：所述介电层未形成所述电路层的一侧为平整表面，所述平整表面是指两个相邻电极间的间隙深度小于两个电极表面的粗糙度Ry(Rz)中的最大值。
  2. 如权利要求1所述的一种介电层表面平整的微流控芯片，其特征在于：所述介电层上设置电路层。
  3. 如权利要求1所述的一种介电层表面平整的微流控芯片，其特征在于：所述电路层上设置有介电层。
  4. 如权利要求1所述的一种介电层表面平整的微流控芯片的制作模具，其特征在于：包括：第一模具(41)、第二模具(42)，所述第一模具(41)连接有第一喷嘴(43)，所述第一模具(41)上设置有底座空间腔(411)，所述第二模具(42)上设置有介电层成型面(44)，第一模具(41)、第二模具(42)贴合后中部形成铸造腔，微流控芯片设置于其中，所述介电层(1)的未形成所述电路层的一侧朝向第二模具(42)的介电层成型面(44，)注塑液(6)自第一喷嘴(43)进入铸造腔，挤压微流控芯片，介电层成型面(44)与介电层(1)未形成所述电路层的一侧相配合成型得到平整面，待冷却后将第一模具(41)、第二模具(42)分开，电路层(2)外侧形成注塑底座(7)。
  5. 如权利要求1-3任一项所述的一种介电层表面平整的微流控芯片的制备方法，其特征在于：用权利要求4所述的制作模具对芯片介电层未形成所述电路层的一侧做压平处理。
  6. 如权利要求5所述的一种介电层表面平整的微流控芯片的制备方法，其特征在于：将微流控芯片放入权利要求4所述的制作模具的铸造腔中，芯片介电层未形成所述电路层的一侧与介电层成型面贴合，注塑液自与电路层同侧的第一喷嘴进入铸造腔并充满铸造腔，对微流控芯片进行挤压使其贴紧介电层成型面。
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