WO2023035101A1 - Chip packaging structure and method for preparing chip packaging structure - Google Patents

Chip packaging structure and method for preparing chip packaging structure Download PDF

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Publication number
WO2023035101A1
WO2023035101A1 PCT/CN2021/116878 CN2021116878W WO2023035101A1 WO 2023035101 A1 WO2023035101 A1 WO 2023035101A1 CN 2021116878 W CN2021116878 W CN 2021116878W WO 2023035101 A1 WO2023035101 A1 WO 2023035101A1
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WO
WIPO (PCT)
Prior art keywords
chip
substrate
metal pad
groove
groove structure
Prior art date
Application number
PCT/CN2021/116878
Other languages
French (fr)
Chinese (zh)
Inventor
潘伟健
赵航
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to PCT/CN2021/116878 priority Critical patent/WO2023035101A1/en
Priority to CN202180099655.7A priority patent/CN117529804A/en
Publication of WO2023035101A1 publication Critical patent/WO2023035101A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/13Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers

Definitions

  • the embodiments of the present application relate to the technical field of semiconductor packaging, and in particular to a chip packaging structure and a method for preparing the chip packaging structure.
  • the chip packaging structure and the method for preparing the chip packaging structure provided by the present application can improve the reliability of the packaged chip.
  • the embodiment of the present application provides a chip packaging structure
  • the chip packaging structure includes a first chip and a carrier
  • the first chip is fixed on the first surface of the carrier through materials
  • the carrier includes A groove structure, the groove bottom of the groove structure is buried inside the carrier, the notch of the groove structure is exposed on the first surface of the carrier, and the groove structure at least partially surrounds the carrier
  • An area for fixing the first chip on the first surface of the board; the side of the first chip is arranged on the notch of the groove structure, and the side of the first chip faces the
  • the orthographic projection of the carrier is at least partially within the channel structure.
  • the material may include, for example, insulating glue, conductive glue or solder; the side of the first chip may also refer to the edge of the first chip.
  • the carrier plate is equipped with a groove structure for receiving materials, when coating materials on the carrier plate, there is no need to reduce the amount of materials, and the amount of materials shown in the standard process can be used, thereby avoiding the shortage of materials and causing the second A chip is broken or the heat dissipation performance is degraded. Therefore, the chip packaging structure provided by the embodiment of the present application can improve the reliability of the chip packaging.
  • the trough structure may be a continuous structure or a discontinuous structure, and the at least partially surrounding may refer to the trough structure surrounding the first surface of the carrier for fixing the first
  • One round of the area of a chip can also refer to the half circle, quarter circle, etc. of the area where the groove structure surrounds the first surface of the carrier and is used to fix the first chip, or it can also mean that the groove structure is intermittent Around the area on the first surface of the carrier board for fixing the first chip.
  • the carrier board described in the embodiments of the present application may include various structures.
  • the carrier board may be a substrate, which may also be called a printed circuit board (PCB, printed circuit board); it may also be a lead frame.
  • PCB printed circuit board
  • the chip packaging structure may also include multiple types.
  • a metal pad is formed on the first surface of the substrate, and the first chip is fixed on the metal pad by a material; the groove structure at least partially surrounds the metal pad.
  • a plurality of first bonding pads are further formed on the first surface of the substrate; multiple lead-out ends of the first chip are correspondingly connected to the plurality of first bonding pads through wires.
  • the metal pad and the first pads, and the first pads may be separated by a solder resist material.
  • the substrate further includes a multilayer wiring layer, and each wiring layer in the multilayer wiring layer includes a patterned conductive circuit and an insulating material isolating the patterned conductive circuit,
  • the conductive lines of each layer are connected through a plurality of via holes;
  • the second surface of the substrate also includes a plurality of conductive bumps;
  • the lead-out end of the first chip is connected to the plurality of conductive bumps through the multi-layer wiring layer Blocks correspond to connections.
  • the multilayer wiring layer includes a first wiring layer disposed on the first surface of the substrate, and the plurality of via holes include first via holes; the first via holes are set between the groove bottom of the groove structure and the other wiring layers; the groove bottom of the groove structure is filled with conductive material, and the conductive lines on the first surface pass through the groove structure and the first Vias connect to conductive traces on other routing layers.
  • the chip packaging structure further includes packaging material; the packaging material is deposited on the first chip and the first surface of the substrate to wrap the first chip and the The exposed portion of the first surface of the substrate.
  • the chip packaging structure further includes a second chip, and the second chip is bonded on the first chip through an epoxy resin film.
  • a plurality of second bonding pads are further formed on the first surface of the substrate; lead ends of the second chip are correspondingly soldered to the plurality of second bonding pads.
  • the carrier board is a lead frame
  • the lead frame includes a metal pad; the groove bottom of the groove structure is buried inside the metal pad, and the notch of the groove structure is exposed to the first edge of the metal pad. On one surface, the groove structure at least partially surrounds a region of the metal pad for fixing the first chip.
  • the lead frame further includes a plurality of first bonding pads; the plurality of first bonding pads are arranged on the side of the metal pad; the plurality of lead ends of the first chip Correspondingly connected to the plurality of first pads through wires.
  • the chip packaging structure further includes an encapsulation material, and the encapsulation material is used to enclose the first chip, the metal pad, and the plurality of first pads.
  • the chip packaging structure further includes a second chip; the second chip is bonded on the first chip through an epoxy resin film.
  • the chip packaging structure further includes a plurality of second bonding pads; the leads of the second chip are correspondingly soldered to the plurality of second bonding pads.
  • the embodiment of the present application provides a chip packaging structure, including a chip and a lead frame;
  • the lead frame includes a metal pad, the first surface of the metal pad includes a raised structure; the chip is fixed on the raised structure by a material, and the side of the chip exceeds the edge of the raised structure preset distance.
  • the material may include, for example, insulating glue, conductive glue or solder, and the side of the chip may also refer to the edge of the chip.
  • the chip packaging structure described in the embodiment of the present application by providing a raised structure on the surface of the metal pad, when the chip is fixed on the raised structure through the material, the side of the chip exceeds the preset distance from the edge of the raised structure, which can The overflowing material flows under the raised structure along the side wall of the raised structure, preventing the material from climbing to the surface of the first chip along the side of the first chip, thereby preventing the chip from opening and shorting due to the material on the surface of the chip.
  • the chip packaging structure provided by the embodiment of the present application can improve the reliability of the chip packaging.
  • the lead frame further includes a plurality of first bonding pads; the plurality of first bonding pads are arranged on the side of the metal pad; the plurality of lead ends of the first chip Correspondingly connected to the plurality of first pads through wires.
  • the chip packaging structure further includes an encapsulation material, and the encapsulation material is used to enclose the first chip, the metal pad and the plurality of first pad.
  • an embodiment of the present application provides an electronic device, the electronic device includes the chip packaging structure described in the first aspect or the second aspect.
  • the chip packaged by the chip packaging structure may include but not limited to: system on chip (system on chip), memory (memory), discrete device, application processor (application processor, AP), micro-electro-mechanical system (micro-electro-mechanical system) , MEMS), microwave radio frequency chip, application specific integrated circuit (ASIC for short) and other chips.
  • the above-mentioned application processing chip or application-specific integrated circuit may be a central processing unit (central processing unit, CPU), an image processing unit (graphics processing unit, GPU), an artificial intelligence processor, for example, a neural network processor (network processing unit) in a specific application. unit, NPU), etc.
  • the memory may be cache memory (cache), random access memory (random access memory, RAM), read only memory (read only memory, ROM), or other memory.
  • Discrete devices may include, but are not limited to, eg, field effect transistors, bipolar transistors, integrated operational amplifiers, and the like, for example.
  • the electronic device may also be an integrated circuit product, wherein the integrated circuit product may include other integrated circuits in addition to the chip packaging structure described in the embodiment of the present application, so that the chip packaging structure shown in the embodiment of the present application is the same as Other integrated circuits cooperate with each other to realize various circuit functions.
  • the embodiment of the present application provides a method for preparing a chip packaging structure, the method comprising: providing a carrier; forming a groove structure on the carrier, the groove bottom of the groove structure is buried in Inside the carrier plate, the notch of the channel structure is exposed to the first surface of the carrier plate; depositing material on the first surface of the carrier plate, the area at least partially surrounded by the channel structure; The chip is fixed on the first surface of the carrier board through the material, wherein, the side of the chip extends above the notch of the groove structure, and the side of the chip faces the side of the carrier board
  • the orthographic projection is located at least partially within the channel structure.
  • the carrier is a substrate, and a metal pad is formed on the first surface of the substrate, and forming a groove structure on the carrier includes: adopting laser opening A groove process, forming a groove structure at least partially surrounding the metal pad.
  • the carrier is a substrate, and a metal pad is formed on the first surface of the substrate, and forming a groove structure on the carrier includes: A first via hole for connecting the conductive circuit on the first surface of the substrate and the conductive circuit on other wiring layers of the substrate is formed on the substrate; for the part of the substrate located above the first via hole further etching to form the groove structure; wherein, the groove bottom of the groove structure communicates with the first via hole.
  • the carrier is a lead frame
  • the forming the groove structure on the carrier includes: etching the metal pad on the lead frame to form the The trough structure.
  • the embodiment of the present application provides a method for preparing a chip package structure, the method comprising: providing a lead frame, the lead frame is provided with a metal pad; on the first surface of the metal pad, Etching around the area for mounting the chip to form a raised structure; depositing material on the raised structure; fixing the chip on the raised structure, wherein the sides of the chip exceed the raised structure edge of the structure.
  • the lead frame is further provided with a plurality of first pads; the method further includes: connecting the plurality of lead ends of the chip with the plurality of lead ends The first pad corresponds to the connection.
  • FIG. 1A and FIG. 1B are a schematic diagram of a chip packaging structure in a conventional technology provided by an embodiment of the present application;
  • FIGS. 2A-2D are structural schematic diagrams of the chip packaging structure 100 provided by the embodiment of the present application.
  • 3A-3B are structural schematic diagrams of a chip packaging structure 200 provided by an embodiment of the present application.
  • 4A-4B are structural schematic diagrams of a chip packaging structure 300 provided by an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a chip packaging structure 400 provided in an embodiment of the present application.
  • 6A-6B are structural schematic diagrams of a chip packaging structure 500 provided by an embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of a chip packaging structure 600 provided by an embodiment of the present application.
  • FIG. 8 is a flowchart of a method for preparing a chip package structure as shown in FIG. 2B provided in an embodiment of the present application;
  • FIGS. 9A-9D are schematic diagrams of various structures during the preparation process of the chip packaging structure shown in FIG. 2B .
  • FIG. 1A is a side view of a conventional packaging structure.
  • the packaging structure includes a substrate 01 coated with a material 02 for mounting a chip 03 on the surface of the substrate 01 .
  • the material 02 may include but not limited to one of conductive glue, insulating glue and solder.
  • the chip 03 is mounted on the substrate 01 through the material 02 .
  • the thickness of chip 03 is less than or equal to 2mil. It can be seen from FIG. 1A that because the thickness of the chip 03 is too thin, the overflowing material 02 climbs along the side of the chip 03 to the upper surface of the chip 03 , that is, the active surface of the chip 03 .
  • FIG. 1B shows a substrate 01 coated with material 02 top view.
  • the area a on the substrate 01 is the area for mounting the chip 03.
  • the length and width of the chip 03 are the same as the length and width of the area a, when the material 02 is coated in the area a, when it is close to the area a No material is coated on the edge area of the substrate.
  • the material 02 cannot overflow to the upper surface of the chip 03.
  • the chip 03 is mounted with a small amount of material as shown in FIG. 1B , it is easy to cause poor heat dissipation of the chip, and also cause the chip 03 to break.
  • the chip packaging structure provided by the embodiment of the present application can ensure that the amount of materials used to mount the chips meets the packaging standards, and the materials will not overflow to the active surface of the chips, thereby improving the reliability of the packaged chips.
  • the chip packaging structure provided in the embodiment of the present application can package one or more chips in the same package. When multiple chips are packaged in the same package, the multiple chips can be arranged horizontally at intervals or stacked. Each chip is connected to other chips through structures such as leads and carrier boards, so as to realize signal exchange between multiple chips.
  • the chip described in the embodiment of the present application may be a bare chip (Die), or a chip formed by simple packaging of a bare chip and other chips or components (active devices or passive devices, etc.), or may be packaged The encapsulation structure formed later is not limited here.
  • the chip packaging structure described in the embodiment of the present application will be described below through the embodiments shown in FIGS. 2A-7 .
  • FIG. 2A is a top view of the chip packaging structure provided by the embodiment of the present application
  • FIG. 2B is a cross-sectional view along AA' of the chip packaging structure shown in FIG. 2A.
  • the chip package structure 100 includes a chip 10 and a substrate 11 .
  • Chip 10 has a relatively thin thickness, generally less than or equal to 2mil.
  • the surface D1 of the chip 10 is formed with functional structures, such as but not limited to integrated circuit structures or electrode structures.
  • the electrodes may include, but not limited to, the source, the drain and the gate of the transistor, for example.
  • the surface D2 of the chip 10 is adhered to the surface S1 of the substrate 11 by glue 12 .
  • the glue 12 described in the embodiment of the present application may be a kind of conductive glue or insulating glue.
  • the glue 12 is conductive glue, so as to improve the heat dissipation performance of the chip 10 .
  • the surface S1 of the substrate 11 includes a metal pad 111 .
  • the surface D2 of the chip 10 is bonded to the metal pad 111 by glue 12.
  • the substrate 11 further includes a groove structure 112 surrounding the metal pad 111 . The groove bottom of the groove structure 112 is buried inside the substrate 11 , and the groove is exposed on the surface S1 of the substrate 11 .
  • the side of the chip 10 (also called the edge of the chip 10 ) exceeds the notch of the groove structure 112 , and the orthographic projection of the side of the chip 10 to the substrate 11 is located in the groove structure 112 . It can be seen from FIG. 2B that the edge of the chip 10 exceeds the notch of the groove structure 112 , and the orthographic projection of the edge of the chip 10 to the substrate 11 is located in the groove structure 112 .
  • the side of the chip 10 exceeds the notch of the groove structure 112, so that the overflowing glue can flow smoothly.
  • Flowing into the groove structure 112 along the groove wall prevents the glue from climbing up to the surface D1 of the chip 10 along the side of the chip 10 , thereby avoiding short-circuiting of the chip caused by the glue on the surface D1 of the chip.
  • the metal pad 111 is provided with a groove structure 112 for receiving glue, when coating glue on the metal pad 111, it is not necessary to reduce the amount of glue, and the amount of glue shown in the standard process can be used, thereby avoiding insufficient glue
  • the chip 10 is broken or the heat dissipation performance is reduced. Therefore, the chip packaging structure provided by the embodiment of the present application can improve the reliability of the chip packaging.
  • the chip 10 is bonded to the metal pad 111 by glue 12 .
  • the reference numeral 12 shown in FIG. 2B may also be solder (such as lead-tin solder), and the chip 10 may be soldered to the metal pad 111 through solder.
  • the substrate 11 shown in FIG. 2B may include at least one wiring layer, and each wiring layer in the at least one wiring layer includes patterned conductive lines and isolated patterned conductive lines.
  • 2B schematically shows the situation that the substrate 11 includes four wiring layers, and the four wiring layers are respectively arranged on the upper surface S1, the lower surface S2, and the upper surface S1 and the lower surface of the substrate 11. The middle two wiring layers between S2.
  • the conductive material used to form the conductive circuit can be a metal, such as one or more combinations of metals such as copper (Cu), silver (Ag), aluminum (Al), and the conductive material used to form the conductive circuit can also be Button tin oxide (ITO), graphite, graphene, etc.; the insulating material can be an inorganic insulating material or an organic insulating material, etc.
  • vias may also be provided on the substrate 11 , and the vias may include but not limited to: through holes or buried holes. The vias may be filled or plated with conductive material.
  • the conductive circuits on the wiring layers in the substrate 11 are connected through via holes.
  • the via holes V1 for connecting the conductive circuit on the surface S1 of the substrate 11 and the conductive circuit on other wiring layers of the substrate 11 can be arranged at the groove bottom of the groove structure 112 and other wiring layers. between.
  • the groove bottom of the groove structure 112 may be filled with conductive material, and the conductive lines on the surface S1 of the substrate 11 are connected to other wiring layers through the groove structure 112 and the via hole V1 , as shown in FIG. 2B .
  • the groove structure 112 and the via hole V1 are used to connect the conductive circuit on the surface S1 of the substrate 11 with the conductive circuit on the wiring layer S3 of the substrate 11 . It can be seen from FIG.
  • the groove structure 112 communicates with the via hole V1.
  • the groove structure 112 can be prepared together in the process of preparing the via hole on the substrate, simplifying the preparation process of the chip packaging structure .
  • a plurality of mutually insulated pads 113 are also formed in the area around the metal pad 111, and the pads 113 are used for bonding with the chip 10. Bond.
  • the part of the surface S1 of the substrate 11 that is not provided with the pad 113 and the metal pad 111 is covered by an insulating material.
  • the insulating material may also be called a solder resist material, and the solder resist material may be an ink material, such as green oil.
  • the surface D1 of the chip 10 is provided with a plurality of leads 101 .
  • Each lead-out end 101 of the chip 10 is respectively connected to each pad 113 on the substrate 11 by wire bonding.
  • Fig. 2A schematically shows that the chip 10 includes eight lead-out ends 101, and eight bonding pads 113 are formed on the substrate 11, and the eight lead-out ends 101 of the chip 10 are respectively connected with the eight bonding pads 113 on the substrate 11 through wires.
  • the leads used to connect the leads 101 of the chip 10 and the bonding pads 113 may be gold wires.
  • the leads of the chip 10 are drawn to the surface S1 of the substrate 22 .
  • a ball grid array 114 may also be provided on the surface S2 of the substrate 11 opposite to the surface S1 , as shown in FIG. 2C , the ball grid array 114 includes a plurality of conductive bumps.
  • the lead-out end 101 of the chip 10 is drawn out to the surface S1 of the substrate 11 through the lead wire, and then is drawn from the surface S1 of the substrate 11 to the surface S2 of the substrate 11 through the wiring layer in the substrate 11, thereby being compatible with the ball grid array 114.
  • the conductive bumps are correspondingly connected.
  • an encapsulation material 115 for protecting the chip 10 leads, and pads on the surface of the substrate 11 can also be provided on the surface D1 of the chip 10 and the surface S1 of the substrate 11.
  • the encapsulation material 115 may be a plastic encapsulation material, as shown in FIG. 2C , which is a cross-sectional view of the chip packaging structure 100 after the encapsulation material is provided.
  • the groove structure 112 surrounds the area on the surface S1 of the substrate 11 for mounting the chip 10 for a week. In other possible implementations, the groove structure 112 may also partially surround the area on the surface S1 of the substrate 11 for mounting the chip 10 , as shown in FIG. 2D , which is another top view of the chip packaging structure 100 . In FIG. 2D, the groove structure 112 is a discontinuous structure.
  • the groove structure 112 includes a first part 1121, a second part 1122, a third part 1123 and a fourth part 1124.
  • the first part 1121 to the second part 1124 are all arranged on In the area around the area on the surface S1 of the substrate 11 where the chip 10 is mounted, each part is discontinuous.
  • the orthographic projection of the edge of the chip 10 to the substrate 11 is located inside the groove structure 112 . That is to say, as shown in FIG. 2D , the orthographic projections of the four corners of the chip 10 to the substrate 11 are not located inside the groove structure 112 , and the orthographic projections of the rest of the chip 10 to the substrate 11 are all located inside the groove structure 112 .
  • FIG. 3A is a top view of the chip packaging structure 200 ;
  • FIG. 3B is a side view of the chip packaging structure 200 .
  • the chip packaging structure 200 includes a substrate 11, a chip 10 and a chip 20, the surface of the substrate 11 is provided with a metal pad 1111 and a metal pad 1112, and a groove structure 1121 and a groove structure are formed in the substrate 11.
  • the groove structure 1121 is used to receive the glue overflowing from the bottom of the chip 10
  • the groove structure 1122 is used to receive the glue overflowing from the bottom of the chip 20
  • the surface S1 of the substrate 11 further includes a plurality of bonding pads 113 , and both the lead-out ends 101 of the chip 10 and the lead-out ends 201 of the chip 20 are correspondingly connected to the bonding pads 113 on the surface S1 of the substrate 11 by wire bonding.
  • the substrate 11 also includes multi-layer wiring layers, and the chip 10 and the chip 20 can communicate with each other through the wiring layers on the substrate 11 for signal communication.
  • the wiring layer in the substrate 11, the bonding pads on the surface S1 of the substrate 11, and the connection between the chip 10 and the chip 20 and the bonding pads on the substrate 11 are similar to each part in the chip package structure 100 shown in FIGS. 2A and 2B , For details, refer to related descriptions in the chip package structure 100 , and details are not repeated here.
  • the multiple chips packaged in the chip package structure 200 shown in FIG. 3A and FIG. 3B described above are arranged at intervals along the same horizontal plane.
  • multiple chips packaged by the chip packaging structure may also be stacked vertically, that is, the chip packaging structure described in the embodiment of the present application may also be a stacked structure.
  • the chip packaging structure described in the embodiment of the present application may also be a stacked structure.
  • multiple chips can be stacked on the chip 10 , and the embodiment of the present application does not limit the number of chips stacked on the chip 10 .
  • the chip package structure 300 for building a stacked structure provided by the embodiment of the present application will be described in more detail below with reference to FIG. 4A and FIG. 4B .
  • FIG. 4A is a top view of the chip packaging structure 300 ;
  • FIG. 4B is a side view of the chip packaging structure 300 .
  • the chip package structure 300 includes a chip 10, a chip 30 and a substrate 11, and the chip 10 is mounted on the surface S1 of the substrate 11 by materials, wherein the structure of the substrate 11, the distance between the chip 10 and the substrate 11
  • the relative position and the bonding method between the chip 10 and the substrate 11 are the same as those of the chip package structure 100 shown in FIG. 2A and FIG. 2B .
  • the related description of the chip package structure 100 which will not be repeated here.
  • the chip 30 is stacked on the chip 10, wherein the chip 30 can be pasted on the chip 10 through an epoxy resin film in the area where the lead-out terminal 101 is not provided.
  • the surface D3 of the chip 30 also includes a plurality of lead-out ends 301 , and the lead-out ends 301 are respectively connected to the pads 113 on the surface S1 of the substrate 11 through wire bonding. Therefore, the chip 10 and the chip 30 are connected to the ball grid array bumps 114 on the surface S2 of the substrate 11 through the bonding pad 113 on the substrate 11 and the redistribution layer on the substrate 11 .
  • the chip 10 and the chip 30 may also be connected through a redistribution layer for signal exchange.
  • the groove structure 112 in the chip packaging structure shown in FIGS. 2A-4B the bottom of the groove communicates with the via hole V1, that is, the groove structure 112 is used to connect the conductive circuit on the surface S1 of the substrate 11 to the other parts of the substrate 11.
  • the connection of conductive traces on a wiring layer may not be connected with the via hole, that is, the groove structure 112 may not be used to communicate with the via hole on the surface S1 of the substrate 11.
  • the conductive lines and the conductive lines on other wiring layers of the substrate 11 may be used to communicate with the via hole on the surface S1 of the substrate 11.
  • the groove structure 112 may also be obtained by laser grooving the metal pad and the insulating medium on the substrate 11 through a laser grooving process.
  • FIG. 5 is a side view of a chip package structure 400 .
  • FIG. 5 it schematically shows that the groove structure 116 penetrates the metal pad 111 and the bottom of the groove further extends to the inside of the substrate 11 .
  • the groove bottom of the groove structure 116 may also be buried inside the metal pad 111 without penetrating through the metal pad 111 .
  • the depth of the groove structure 116 is not specifically limited, and it is determined according to the needs of the scene.
  • the substrate 11 is used as the carrier, and the chip is mounted on the metal pad on the surface of the substrate 11 .
  • the chip packaging structures shown in FIGS. 2A-5 are all substrate packaging structures.
  • the chip package structure may also be a lead-frame (lead-frame) package structure. At this time, no substrate is provided in the chip packaging structure, and the lead frame is used as the carrier board, and the chip is mounted on the metal pad of the lead frame through materials.
  • the chip package structure 500 of the lead-frame package structure provided by the embodiment of the present application will be described in more detail below with reference to FIG. 6A and FIG. 6B .
  • FIG. 6A is a side view of the chip packaging structure 500
  • FIG. 6B is a top view of the chip packaging structure 500
  • the chip package structure 500 includes a lead frame 43 on which a metal pad 41 is disposed.
  • the metal pad 41 is mounted on the inner surface of the lead frame 43 .
  • the surface G1 of the metal pad 41 is provided with a groove structure 411, the shape of the groove structure 411 and the relative positional relationship with the chip 40 are the same as the groove structure 112 shown in Fig. 2A and Fig. 2B and the relationship between the groove structure 112 and the chip.
  • the phase position relationship between 10 is the same, for details, please refer to related descriptions, and details will not be repeated here.
  • the groove structure 411 is used to hold the overflowing solder and prevent the solder from climbing to the surface of the chip 40 through the side of the chip 40.
  • a plurality of bonding pads 42 are mounted on the lead frame 43 and around the metal pad 41 .
  • Lead-out terminals 401 are also provided on the chip 10 , and each lead-out terminal 401 of the chip 10 is respectively connected to each bonding pad through a lead wire by way of wire bonding.
  • the chip packaging structure 400 further includes a packaging material, which includes but not limited to: epoxy resin.
  • the encapsulation material is used for encapsulating structures such as the chip 40 , the metal pad 41 and the pad 42 inside the encapsulation shell.
  • the groove structure 411 is formed on the metal pad 41 to receive the overflowing solder.
  • a bump structure can also be provided on the metal pad, and the chip is mounted on the bump structure by solder mounting, so that the overflowing solder can Flowing through the sidewall of the raised structure to the side of the raised structure prevents the solder from climbing to the surface of the chip through the side of the chip.
  • FIG. 7 is a side view of the chip packaging structure 600 . As shown in FIG.
  • the chip package structure 600 includes a chip 60 , a metal pad 61 , a bonding pad 62 and a lead frame 63 .
  • the structures of the lead frame 63 and the pads 62 and the relative positional relationship with other structures are the same as those of the chip package structure 500 shown in FIGS. 6A-6B . Refer to related descriptions for details and will not be repeated here.
  • a protruding structure 611 is formed on the surface of the metal pad 61 , and the protruding structure 611 may be obtained by etching the metal pad 61 .
  • the chip 60 is mounted on the surface of the protruding structure 611 by solder.
  • the edge of the chip 60 exceeds the edge of the raised structure 611 . Therefore, the overflowing solder can flow along the sidewall of the raised structure 611 to the area on the metal pad 61 and both sides of the raised structure 611 , preventing the solder from climbing to the surface of the chip 60 through the side of the chip 60 .
  • One chip is packaged in each of the chip packaging structures shown in Figures 6A-7.
  • the chip packaging structure is a lead-frame packaging structure
  • multiple chips can also be packaged in the chip packaging structure.
  • the plurality of chips can be arranged horizontally at intervals, or vertically stacked.
  • a plurality of metal pads for welding chips can be arranged in the chip package structure, and the structure of each metal pad can be as shown in FIG. 5B or the structure of the metal pad shown in FIG. 6 , please refer to related descriptions for details, and details will not be repeated here.
  • the groove structure described in the above embodiments is an annular groove structure surrounding the chip bonding (or soldering) area, and each part is connected.
  • the groove structure in the connecting (or welding) area can also be a partially connected structure.
  • the top view of the groove structure can also be a plurality of disconnected spherical structures.
  • the embodiment of the present application does not specifically limit the specific shape of the groove structure, which can be set according to the needs of the application scenario.
  • the embodiment of the present application also includes an electronic device, and the electronic device includes the chip packaging structure as shown in the above embodiments.
  • the chip packaged in the chip packaging structure may include but not limited to: system on chip (system on chip), memory (memory), discrete device, application processor (application processor, AP), micro-electro-mechanical system (micro-electro-mechanical System, MEMS), microwave radio frequency chip, application specific integrated circuit (ASIC for short) and other chips.
  • the above-mentioned application processing chip or application-specific integrated circuit may be a central processing unit (central processing unit, CPU), an image processing unit (graphics processing unit, GPU), an artificial intelligence processor, for example, a neural network processor (network processing unit) in a specific application. unit, NPU), etc.
  • the memory may be cache memory (cache), random access memory (random access memory, RAM), read only memory (read only memory, ROM), or other memory.
  • Discrete devices may include, but are not limited to, eg, field effect transistors, bipolar transistors, integrated operational amplifiers, and the like, for example.
  • the electronic device can also be an integrated circuit product, wherein, in addition to the chip package structure described in the embodiment of the application, the integrated circuit product can also include other integrated circuits, so that the chip package shown in the embodiment of the application The structure cooperates with other integrated circuits to realize various circuit functions.
  • the embodiment of the present application also provides a method for the chip packaging structure.
  • the following takes the preparation of the chip packaging structure 100 as shown in FIG. 2B as an example, as shown in FIG. 8
  • the flow 800 of the present invention describes in detail the process flow of preparing the chip package structure 100 .
  • the process flow 800 includes the following steps:
  • a substrate 11 is provided, and the substrate 11 may include multiple wiring layers.
  • each wiring layer includes patterned conductive lines.
  • the surface S1 of the substrate 11 includes a metal pad 111 , a pad, and a solder resist material 117 for isolating the metal pad 111 and the pad.
  • the solder resist material 117 may be green oil.
  • Step 802 forming a plurality of via holes and groove structures 112 on the substrate 11 for connecting conductive lines on each wiring layer on the substrate 11 .
  • the plurality of via holes include a via hole V1 for connecting the conductive lines on the surface S1 of the substrate 11 and the conductive lines on other wiring layers of the substrate 11 (such as the wiring layer S3 shown in FIG. 9B ).
  • a region near the surface S1 on the top of the via hole 112 is further etched to form a groove structure 112 .
  • the notch of the groove structure 112 is exposed on the surface S1 of the substrate 11 , and the bottom of the groove communicates with the conductive circuit on one of the wiring layers of the substrate 11 .
  • the formed groove structure 112 is shown in FIG. 9B .
  • Step 803 coating the conductive glue 12 on the metal pad 111 and the area surrounded by the groove structure 112 , as shown in FIG. 9C .
  • Step 804 bonding the chip 10 on the metal pad 111 and the area where the conductive glue 12 is coated, wherein the side of the chip 10 exceeds the edge of the groove structure 112 by a predetermined distance, and the side of the chip 10 faces the groove structure 112
  • the formed groove structure 112 is shown in FIG. 8D .
  • step 803 and step 804 in the process of bonding the chip 10, the overflowing conductive glue can flow into the groove along the side wall of the groove structure 112, avoiding climbing to the surface of the chip along the side of the chip 10, Improve chip reliability.
  • Step 805 using a wire bonding process to respectively bond the leads on the surface D1 of the chip 10 to the pads 113 of the substrate 11 .
  • the resulting structure is shown in Figure 2B.
  • step 805 the lead-out end 101 of the chip 10 is led out to the surface S1 of the substrate 11 through the wire, and then is led from the surface S1 of the substrate 11 to the surface S2 of the substrate 11 through the wiring layer in the substrate 11, so that the connection with the substrate 11 can be realized. Communication and signal exchange between other chips or components.
  • pads for protecting the chip 10, leads, and the surface of the substrate 11 may also be formed on the surface of the chip 10 and the surface of the substrate 11.
  • the encapsulation material, the encapsulation material may be a plastic encapsulation material.
  • the chip package structure as shown in FIG. 2B can be prepared through steps 801 to 805, and the method for preparing the chip structure 200 as shown in FIG. 3B is similar to the method for preparing the chip package structure as shown in FIG. 2A Similar, no more details.
  • the chip 20 can be further bonded with an epoxy resin film on the surface D1 of the chip 10; in step 805, the The leads on the surface D3 of the chip 20 are bonded to the pads 113 of the substrate 11 by using a wire bonding process.
  • step 802 can be replaced with the following step: using a laser grooving process, laser grooving is performed on the metal pad 111 to form a groove around the mounting area of the chip structure116.
  • the recessed depth of the groove structure 116 into the substrate 11 may not exceed the thickness of the metal pad, and may also be the thickness of a multi-layer wiring layer (for example, two wiring layers); when it is necessary to prepare a chip package structure as shown in FIG. 6B ,
  • the substrate 11 in step 801 can be replaced with a lead frame provided with metal pads and welding pads, and other processes are similar and will not be repeated here.
  • the substrate 11 in step 801 can be replaced with a lead frame provided with metal pads and pads, and the above step 802 can be replaced by the following steps: etching the metal pad to A raised structure for mounting chips is formed.

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Abstract

Provided in embodiments of the present application are a chip packaging structure and a preparation method. The chip packaging structure comprises a first chip and a carrier board. The first chip is fixed on a first surface of the carrier board by means of a material. The carrier board comprises a groove structure, a groove bottom of the groove structure being buried in the carrier board, a groove opening of the groove structure being exposed at the first surface of the carrier board, and the groove structure at least partially surrounding a region of the first surface of the carrier board used for affixing the first chip. A side edge of the first chip extends to the groove opening of the groove structure, and an orthographic projection of the side edge of the first chip towards the carrier board is at least partially located within the groove structure. The present chip packaging structure can increase the reliability of a packaged chip.

Description

芯片封装结构和用于制备芯片封装结构的方法Chip package structure and method for preparing chip package structure 技术领域technical field
本申请实施例涉及半导体封装技术领域,尤其涉及一种芯片封装结构和用于制备芯片封装结构的方法。The embodiments of the present application relate to the technical field of semiconductor packaging, and in particular to a chip packaging structure and a method for preparing the chip packaging structure.
背景技术Background technique
随着半导体技术的发展,电子设备向着轻薄短小的趋势发展,将更多性能和特征集成在越来越小的空间中,因此,芯片向着体积更小、厚度更薄的方向发展。从而,对芯片封装技术要求也越来越高。With the development of semiconductor technology, electronic devices are becoming thinner and smaller, integrating more performance and features into smaller and smaller spaces. Therefore, chips are developing in the direction of smaller volume and thinner thickness. Therefore, the requirements for chip packaging technology are getting higher and higher.
传统芯片封装技术中,当采用诸如粘接或者焊接等芯片贴装工序将芯片设置于基板上时,如果芯片过薄(例如芯片厚度小于等于2mil),用于贴装芯片的物料(例如胶水或焊锡)容易溢出至芯片的有源面,从而导致芯片内所集成的电路开路或短路,进而导致芯片失效,降低了芯片封装过程中的可靠性。由此,针对厚度较薄的芯片,如何提高封装芯片的可靠性成为需要解决的问题。In traditional chip packaging technology, when the chip is placed on the substrate by chip mounting processes such as bonding or welding, if the chip is too thin (for example, the thickness of the chip is less than or equal to 2mil), the materials used for mounting the chip (such as glue or Solder) is easy to overflow to the active surface of the chip, which will lead to open circuit or short circuit of the circuit integrated in the chip, which will lead to chip failure and reduce the reliability of the chip packaging process. Therefore, for thinner chips, how to improve the reliability of packaged chips becomes a problem to be solved.
发明内容Contents of the invention
本申请提供的芯片封装结构和用于制备芯片封装结构的方法,可以提高所封装的芯片的可靠性。The chip packaging structure and the method for preparing the chip packaging structure provided by the present application can improve the reliability of the packaged chip.
为达到上述目的,本申请采用如下技术方案:In order to achieve the above object, the application adopts the following technical solutions:
第一方面,本申请实施例提供一种芯片封装结构,该芯片封装结构包括第一芯片和载板;所述第一芯片通过物料固定于所述载板的第一表面;所述载板包括槽型结构,所述槽型结构的槽底埋于所述载板内部,所述槽型结构的槽口暴露于所述载板的第一表面,所述槽型结构至少部分环绕所述载板的第一表面中、用于固定所述第一芯片的区域;所述第一芯片的侧边设置于所述槽型结构的槽口之上,且所述第一芯片的侧边向所述载板的正投影至少部分位于所述槽型结构内。In the first aspect, the embodiment of the present application provides a chip packaging structure, the chip packaging structure includes a first chip and a carrier; the first chip is fixed on the first surface of the carrier through materials; the carrier includes A groove structure, the groove bottom of the groove structure is buried inside the carrier, the notch of the groove structure is exposed on the first surface of the carrier, and the groove structure at least partially surrounds the carrier An area for fixing the first chip on the first surface of the board; the side of the first chip is arranged on the notch of the groove structure, and the side of the first chip faces the The orthographic projection of the carrier is at least partially within the channel structure.
本申请实施例中,所述物料例如可以包括绝缘胶、导电胶或者焊料;所述第一芯片的侧边也可以是指第一芯片的边沿。通过在载板上设置槽型结构,且第一芯片固定于载板上时,将第一芯片的侧边延伸至槽型结构的槽口之上、且向载板的正投影位于槽型结构内,可以使得溢出的物料顺着槽壁流于槽型结构内,避免物料顺着第一芯片的侧边爬至第一芯片的表面,进而避免由于物料上芯片表面导致芯片开短路。此外,由于载板上设置有承接物料的槽型结构,在载板上涂布物料时,可以不需要减少物料的量,采用标准工艺中所示的物料量即可,从而避免物料不足导致第一芯片断裂或者散热性能降低。由此,本申请实施例提供的芯片封装结构,可以提高芯片封装的可靠性。In the embodiment of the present application, the material may include, for example, insulating glue, conductive glue or solder; the side of the first chip may also refer to the edge of the first chip. By setting the groove structure on the carrier, and when the first chip is fixed on the carrier, the side of the first chip is extended above the notch of the groove structure, and the orthographic projection to the carrier is located in the groove structure Inside, the overflowing material can flow into the groove structure along the groove wall, preventing the material from climbing to the surface of the first chip along the side of the first chip, thereby preventing the chip from opening and shorting due to the material on the surface of the chip. In addition, since the carrier plate is equipped with a groove structure for receiving materials, when coating materials on the carrier plate, there is no need to reduce the amount of materials, and the amount of materials shown in the standard process can be used, thereby avoiding the shortage of materials and causing the second A chip is broken or the heat dissipation performance is degraded. Therefore, the chip packaging structure provided by the embodiment of the present application can improve the reliability of the chip packaging.
本申请实施例中,槽型结构可以为连续的结构,也可以为不连续的结构,所述至少 部分环绕,可以是指槽型结构环绕载板的第一表面中、用于固定所述第一芯片的区域一周,还可以是指槽型结构环绕载板的第一表面中、用于固定所述第一芯片的区域半周、四分之一周等,还可以是指槽型结构断续绕载板的第一表面中、用于固定所述第一芯片的区域。In the embodiment of the present application, the trough structure may be a continuous structure or a discontinuous structure, and the at least partially surrounding may refer to the trough structure surrounding the first surface of the carrier for fixing the first One round of the area of a chip can also refer to the half circle, quarter circle, etc. of the area where the groove structure surrounds the first surface of the carrier and is used to fix the first chip, or it can also mean that the groove structure is intermittent Around the area on the first surface of the carrier board for fixing the first chip.
本申请实施例中所述的载板,可以包括多种结构。载板可以为基板,该基板也可以称为印刷电路板(PCB,printed circuit board);也可以为引线框架。针对载板为基板和引线框架两种情况,芯片封装结构还可以包括多种。The carrier board described in the embodiments of the present application may include various structures. The carrier board may be a substrate, which may also be called a printed circuit board (PCB, printed circuit board); it may also be a lead frame. For the two cases where the carrier board is a substrate and a lead frame, the chip packaging structure may also include multiple types.
若载板为基板:If the carrier is a substrate:
在一种可能的实现方式中,所述基板的第一表面形成有金属垫,所述第一芯片通过物料固定于所述金属垫上;所述槽型结构至少部分环绕所述金属垫。In a possible implementation manner, a metal pad is formed on the first surface of the substrate, and the first chip is fixed on the metal pad by a material; the groove structure at least partially surrounds the metal pad.
在一种可能的实现方式中,所述基板的第一表面还形成有多个第一焊盘;所述第一芯片的多个引出端通过引线与所述多个第一焊盘对应连接。In a possible implementation manner, a plurality of first bonding pads are further formed on the first surface of the substrate; multiple lead-out ends of the first chip are correspondingly connected to the plurality of first bonding pads through wires.
金属垫和第一焊盘之间、以及各第一焊盘之间可以通过阻焊材料间隔开。The metal pad and the first pads, and the first pads may be separated by a solder resist material.
在一种可能的实现方式中,所述基板还包括多层布线层,所述多层布线层中的每一层布线层包括图案化导电线路以及隔离所述图案化的导电线路的绝缘材料,各层导电线路之间通过多个过孔连通;所述基板的第二表面还包括多个导电凸块;所述第一芯片的引出端通过所述多层布线层与所述多个导电凸块对应连接。In a possible implementation manner, the substrate further includes a multilayer wiring layer, and each wiring layer in the multilayer wiring layer includes a patterned conductive circuit and an insulating material isolating the patterned conductive circuit, The conductive lines of each layer are connected through a plurality of via holes; the second surface of the substrate also includes a plurality of conductive bumps; the lead-out end of the first chip is connected to the plurality of conductive bumps through the multi-layer wiring layer Blocks correspond to connections.
在一种可能的实现方式中,所述多层布线层包括设置于所述基板的第一表面的第一布线层,所述多个过孔包括第一过孔;所述第一过孔设置于所述槽型结构的槽底与所述其他布线层之间;所述槽型结构的槽底填充有导电材料,所述第一表面的导电线路通过所述槽型结构和所述第一过孔与其他布线层上的导电线路连接。In a possible implementation manner, the multilayer wiring layer includes a first wiring layer disposed on the first surface of the substrate, and the plurality of via holes include first via holes; the first via holes are set between the groove bottom of the groove structure and the other wiring layers; the groove bottom of the groove structure is filled with conductive material, and the conductive lines on the first surface pass through the groove structure and the first Vias connect to conductive traces on other routing layers.
在一种可能的实现方式中,所述芯片封装结构还包括封装材料;所述封装材料沉积于所述第一芯片和所述基板的第一表面之上,以包裹所述第一芯片和所述基板的第一表面暴露出的部分。In a possible implementation manner, the chip packaging structure further includes packaging material; the packaging material is deposited on the first chip and the first surface of the substrate to wrap the first chip and the The exposed portion of the first surface of the substrate.
在一种可能的实现方式中,所述芯片封装结构还包括第二芯片,所述第二芯片通过环氧树脂膜粘接于所述第一芯片之上。In a possible implementation manner, the chip packaging structure further includes a second chip, and the second chip is bonded on the first chip through an epoxy resin film.
在一种可能的实现方式中,所述基板的第一表面还形成有多个第二焊盘;所述第二芯片的引出端与所述多个第二焊盘对应焊接。In a possible implementation manner, a plurality of second bonding pads are further formed on the first surface of the substrate; lead ends of the second chip are correspondingly soldered to the plurality of second bonding pads.
若载板为引线框架:If the carrier board is a lead frame:
在一种可能的实现方式中,所述引线框架包括金属垫;所述槽型结构的槽底埋于所述金属垫的内部,所述槽型结构的槽口暴露于所述金属垫的第一表面,所述槽型结构至少部分环绕所述金属垫中、用于固定所述第一芯片的区域。In a possible implementation manner, the lead frame includes a metal pad; the groove bottom of the groove structure is buried inside the metal pad, and the notch of the groove structure is exposed to the first edge of the metal pad. On one surface, the groove structure at least partially surrounds a region of the metal pad for fixing the first chip.
在一种可能的实现方式中,所述引线框架还包括多个第一焊盘;所述多个第一焊盘设置于所述金属垫的侧边;所述第一芯片的多个引出端通过引线与所述多个第一焊盘对应连接。In a possible implementation manner, the lead frame further includes a plurality of first bonding pads; the plurality of first bonding pads are arranged on the side of the metal pad; the plurality of lead ends of the first chip Correspondingly connected to the plurality of first pads through wires.
在一种可能的实现方式中,所述芯片封装结构还包括封装材料,所述封装材料用于包裹所述第一芯片、所述金属垫和所述多个第一焊盘。In a possible implementation manner, the chip packaging structure further includes an encapsulation material, and the encapsulation material is used to enclose the first chip, the metal pad, and the plurality of first pads.
在一种可能的实现方式中,所述芯片封装结构还包括第二芯片;所述第二芯片通过 环氧树脂膜粘接于所述第一芯片之上。In a possible implementation manner, the chip packaging structure further includes a second chip; the second chip is bonded on the first chip through an epoxy resin film.
在一种可能的实现方式中,所述芯片封装结构还包括多个第二焊盘;所述第二芯片的引出端与所述多个第二焊盘对应焊接。In a possible implementation manner, the chip packaging structure further includes a plurality of second bonding pads; the leads of the second chip are correspondingly soldered to the plurality of second bonding pads.
第二方面,本申请实施例提供一种芯片封装结构,包括芯片和引线框架;In the second aspect, the embodiment of the present application provides a chip packaging structure, including a chip and a lead frame;
所述引线框架包括金属垫,所述金属垫的第一表面包括凸起结构;所述芯片通过物料固定于所述凸起结构之上,所述芯片的侧边超过所述凸起结构的边缘预设距离。The lead frame includes a metal pad, the first surface of the metal pad includes a raised structure; the chip is fixed on the raised structure by a material, and the side of the chip exceeds the edge of the raised structure preset distance.
本申请实施例中,物料例如可以包括绝缘胶、导电胶或焊料,所述芯片的的侧边还可以是指芯片的边沿。本申请实施例所述的芯片封装结构,通过在金属垫的表面设置凸起结构,将芯片通过物料固定于凸起结构上时、将芯片的侧边超过凸起结构的边缘预设距离,可以使得溢出的物料顺着凸起结构的侧壁流于凸起结构下方,避免物料顺着第一芯片的侧边爬至第一芯片的表面,进而避免由于物料上芯片表面导致芯片开短路。此外,在凸起结构上涂布物料时,还可以不需要减少物料的量,采用标准工艺中所示的物料量即可,从而避免物料不足导致芯片断裂或者散热性能降低。由此,本申请实施例提供的芯片封装结构,可以提高芯片封装的可靠性。In the embodiment of the present application, the material may include, for example, insulating glue, conductive glue or solder, and the side of the chip may also refer to the edge of the chip. In the chip packaging structure described in the embodiment of the present application, by providing a raised structure on the surface of the metal pad, when the chip is fixed on the raised structure through the material, the side of the chip exceeds the preset distance from the edge of the raised structure, which can The overflowing material flows under the raised structure along the side wall of the raised structure, preventing the material from climbing to the surface of the first chip along the side of the first chip, thereby preventing the chip from opening and shorting due to the material on the surface of the chip. In addition, there is no need to reduce the amount of material when coating the protruding structure, and the amount of material shown in the standard process can be used, so as to avoid chip breakage or heat dissipation performance reduction caused by insufficient material. Therefore, the chip packaging structure provided by the embodiment of the present application can improve the reliability of the chip packaging.
在一种可能的实现方式中,所述引线框架还包括多个第一焊盘;所述多个第一焊盘设置于所述金属垫的侧边;所述第一芯片的多个引出端通过引线与所述多个第一焊盘对应连接。In a possible implementation manner, the lead frame further includes a plurality of first bonding pads; the plurality of first bonding pads are arranged on the side of the metal pad; the plurality of lead ends of the first chip Correspondingly connected to the plurality of first pads through wires.
在一种可能的实现方式中,所述芯片封装结构还包括所述芯片封装结构还包括封装材料,所述封装材料用于包裹所述第一芯片、所述金属垫和所述多个第一焊盘。In a possible implementation manner, the chip packaging structure further includes an encapsulation material, and the encapsulation material is used to enclose the first chip, the metal pad and the plurality of first pad.
第三方面,本申请实施例提供一种电子设备,该电子设备包括如第一方面或者第二方面所述的芯片封装结构。In a third aspect, an embodiment of the present application provides an electronic device, the electronic device includes the chip packaging structure described in the first aspect or the second aspect.
该芯片封装结构所封装的芯片可以包括但不限于:片上系统(system on chip)、存储器(memory)、分立器件、应用处理芯片(application processor,AP)、微机电系统(micro-electro-mechanical System,MEMS)、微波射频芯片、专用集成电路(application specific integrated circuit,简称ASIC)等芯片。上述应用处理芯片或专用集成电路在具体应用中可以是中央处理器(central processing unit,CPU)、图像处理器(graphics processing unit,GPU)、人工智能处理器,例如,神经网络处理器(network processing unit,NPU)等。存储器可以是高速缓冲存储器(cache)、随机存取存储器(random access memory,RAM)、只读存储器(read only memory,ROM)或其他存储器。分立器件例如可以包括但不限于例如场效应晶体管、双极性晶体管、集成运算放大器等。电子设备也可以为集成电路产品,其中,该集成电路产品中除了包括本申请实施例所述的芯片封装结构外,还可以包括其他集成电路,从而使得本申请实施例所示的芯片封装结构与其他集成电路之间相互配合,以实现各种电路功能。The chip packaged by the chip packaging structure may include but not limited to: system on chip (system on chip), memory (memory), discrete device, application processor (application processor, AP), micro-electro-mechanical system (micro-electro-mechanical system) , MEMS), microwave radio frequency chip, application specific integrated circuit (ASIC for short) and other chips. The above-mentioned application processing chip or application-specific integrated circuit may be a central processing unit (central processing unit, CPU), an image processing unit (graphics processing unit, GPU), an artificial intelligence processor, for example, a neural network processor (network processing unit) in a specific application. unit, NPU), etc. The memory may be cache memory (cache), random access memory (random access memory, RAM), read only memory (read only memory, ROM), or other memory. Discrete devices may include, but are not limited to, eg, field effect transistors, bipolar transistors, integrated operational amplifiers, and the like, for example. The electronic device may also be an integrated circuit product, wherein the integrated circuit product may include other integrated circuits in addition to the chip packaging structure described in the embodiment of the present application, so that the chip packaging structure shown in the embodiment of the present application is the same as Other integrated circuits cooperate with each other to realize various circuit functions.
第四方面,本申请实施例提供一种用于制备芯片封装结构的方法,该方法包括:提供一载板;在所述载板上形成槽型结构,所述槽型结构的槽底埋于所述载板内部,所述槽型结构的槽口暴露于所述载板的第一表面;在所述载板的第一表面上、所述槽型结构至少部分环绕的区域沉积物料;将芯片通过所述物料固定于所述载板的第一表面,其中,所述芯片的侧边延伸至所述槽型结构的槽口之上,且所述芯片的侧边向所述载板的正投 影至少部分位于所述槽型结构内。In a fourth aspect, the embodiment of the present application provides a method for preparing a chip packaging structure, the method comprising: providing a carrier; forming a groove structure on the carrier, the groove bottom of the groove structure is buried in Inside the carrier plate, the notch of the channel structure is exposed to the first surface of the carrier plate; depositing material on the first surface of the carrier plate, the area at least partially surrounded by the channel structure; The chip is fixed on the first surface of the carrier board through the material, wherein, the side of the chip extends above the notch of the groove structure, and the side of the chip faces the side of the carrier board The orthographic projection is located at least partially within the channel structure.
基于第四方面,在一种可能的实现方式中,所述载板为基板,所述基板的第一表面形成有金属垫,所述在所述载板上形成槽型结构包括:采用激光开槽工艺,形成至少部分环绕所述金属垫的槽型结构。Based on the fourth aspect, in a possible implementation manner, the carrier is a substrate, and a metal pad is formed on the first surface of the substrate, and forming a groove structure on the carrier includes: adopting laser opening A groove process, forming a groove structure at least partially surrounding the metal pad.
基于第四方面,在一种可能的实现方式中,所述载板为基板,所述基板的第一表面形成有金属垫,所述在所述载板上形成槽型结构包括:在所述基板上形成用于连接所述基板第一表面上的导电线路与所述基板其他布线层上的导电线路的第一过孔;对所述基板上、位于所述第一过孔之上的部分进一步刻蚀以形成所述槽型结构;其中,所述槽型结构的槽底与所述第一过孔连通。Based on the fourth aspect, in a possible implementation manner, the carrier is a substrate, and a metal pad is formed on the first surface of the substrate, and forming a groove structure on the carrier includes: A first via hole for connecting the conductive circuit on the first surface of the substrate and the conductive circuit on other wiring layers of the substrate is formed on the substrate; for the part of the substrate located above the first via hole further etching to form the groove structure; wherein, the groove bottom of the groove structure communicates with the first via hole.
基于第四方面,在一种可能的实现方式中,所述载板为引线框架,所述在所述载板上形成槽型结构包括:刻蚀所述引线框架上的金属垫,以形成所述槽型结构。Based on the fourth aspect, in a possible implementation manner, the carrier is a lead frame, and the forming the groove structure on the carrier includes: etching the metal pad on the lead frame to form the The trough structure.
第五方面,本申请实施例提供一种用于制备芯片封装结构的方法,该方法包括:提供一引线框架,所述引线框架上设置有金属垫;对所述金属垫的第一表面中、围绕用于固定芯片的区域进行刻蚀,以形成凸起结构;在所述凸起结构上沉积物料;将所述芯片固定于所述凸起结构上,其中,芯片的侧边超过所述凸起结构的边缘。In the fifth aspect, the embodiment of the present application provides a method for preparing a chip package structure, the method comprising: providing a lead frame, the lead frame is provided with a metal pad; on the first surface of the metal pad, Etching around the area for mounting the chip to form a raised structure; depositing material on the raised structure; fixing the chip on the raised structure, wherein the sides of the chip exceed the raised structure edge of the structure.
基于第五方面,在一种可能的实现方式中,所述引线框架上还设置有多个第一焊盘;所述方法还包括:将所述芯片的多个引出端通过引线与所述多个第一焊盘对应连接。Based on the fifth aspect, in a possible implementation, the lead frame is further provided with a plurality of first pads; the method further includes: connecting the plurality of lead ends of the chip with the plurality of lead ends The first pad corresponds to the connection.
附图说明Description of drawings
为了更清楚地说明本申请实施例的技术方案,下面将对本申请实施例的描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the accompanying drawings that need to be used in the description of the embodiments of the present application. Obviously, the accompanying drawings in the following description are only some embodiments of the present application , for those skilled in the art, other drawings can also be obtained according to these drawings without paying creative labor.
图1A和图1B是本申请实施例提供的传统技术中芯片封装结构的一个示意图;FIG. 1A and FIG. 1B are a schematic diagram of a chip packaging structure in a conventional technology provided by an embodiment of the present application;
图2A-图2D是本申请实施例提供的芯片封装结构100的结构示意图;2A-2D are structural schematic diagrams of the chip packaging structure 100 provided by the embodiment of the present application;
图3A-图3B是本申请实施例提供的芯片封装结构200的结构示意图;3A-3B are structural schematic diagrams of a chip packaging structure 200 provided by an embodiment of the present application;
图4A-图4B是本申请实施例提供的芯片封装结构300的结构示意图;4A-4B are structural schematic diagrams of a chip packaging structure 300 provided by an embodiment of the present application;
图5是本申请实施例提供的芯片封装结构400的结构示意图;FIG. 5 is a schematic structural diagram of a chip packaging structure 400 provided in an embodiment of the present application;
图6A-图6B是本申请实施例提供的芯片封装结构500的结构示意图;6A-6B are structural schematic diagrams of a chip packaging structure 500 provided by an embodiment of the present application;
图7是本申请实施例提供的芯片封装结构600的一个结构示意图;FIG. 7 is a schematic structural diagram of a chip packaging structure 600 provided by an embodiment of the present application;
图8是本申请实施例提供的如图2B所示的芯片封装结构的制备方法的流程图;FIG. 8 is a flowchart of a method for preparing a chip package structure as shown in FIG. 2B provided in an embodiment of the present application;
图9A-图9D是如图2B所示的芯片封装结构制备过程中的各结构示意图。FIGS. 9A-9D are schematic diagrams of various structures during the preparation process of the chip packaging structure shown in FIG. 2B .
具体实施方式Detailed ways
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
本文所提及的"第一"、"第二"以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。同样,"一个"或者"一"等类似词语也不表示数量限制,而是表示存在至少一个。"First", "second" and similar words mentioned herein do not indicate any order, quantity or importance, but are only used to distinguish different components. Likewise, words like "a" or "one" do not denote a limitation in number, but indicate that there is at least one.
在本申请实施例中,“示例性的”或者“例如”等词用于表示例子、例证或说明。本申请实施例中被描述为“示例性的”或者“例如”的任何实施例或设计方案不应被解释为比其它实施例或设计方案更优选或更具优势。确切而言,使用“示例性的”或者“例如”等词旨在以具体方式呈现相关概念。在本申请实施例的描述中,除非另有说明,“多个”的含义是指两个或两个以上。例如,多个引出端是指两个或两个以上的引出端。In the embodiments of the present application, words such as "exemplary" or "for example" are used to represent examples, illustrations or descriptions. Any embodiment or design scheme described as "exemplary" or "for example" in the embodiments of the present application shall not be interpreted as being more preferred or more advantageous than other embodiments or design schemes. Rather, the use of words such as "exemplary" or "such as" is intended to present related concepts in a concrete manner. In the description of the embodiments of the present application, unless otherwise specified, "plurality" means two or more. For example, a plurality of outlets refers to two or more outlets.
请参考图1A,图1A是传统封装结构的一个侧视图。在图1A中,封装结构包括基板01,基板01上涂布有用于将芯片03贴装于基板01表面的物料02。该物料02可以包括但不限于导电胶、绝缘胶和焊料中的一项。芯片03通过物料02贴装于基板01上。芯片03的厚度小于等于2mil。从图1A中可以看出,由于芯片03的厚度过薄,芯片贴装过程中溢出的物料02顺着芯片03的侧边爬至芯片03的上表面,也即芯片03的有源面。由于芯片03的上表面形成有诸如集成电路或者电极等结构,物料02爬至芯片03的上表面容易导致芯片03开路或短路。为了避免物料02爬至芯片03的表面,业界进一步提出采用少量的物料02将芯片03贴装于基板01上,如图1B所示,图1B示出了涂布有物料02的基板01的一个俯视图。在图1B中,基板01上的区域a为用于贴装芯片03的区域,假设芯片03的长宽尺寸与区域a的长宽尺寸一样,在区域a涂布物料02时,在靠近区域a的边缘区域均不涂布物料,当芯片03贴装于基板01上时,物料02则无法溢出至芯片03的上表面。然而,当采用图1B所示的少量物料贴装芯片03时,容易导致芯片散热不佳,此外还会导致芯片03断裂。Please refer to FIG. 1A , which is a side view of a conventional packaging structure. In FIG. 1A , the packaging structure includes a substrate 01 coated with a material 02 for mounting a chip 03 on the surface of the substrate 01 . The material 02 may include but not limited to one of conductive glue, insulating glue and solder. The chip 03 is mounted on the substrate 01 through the material 02 . The thickness of chip 03 is less than or equal to 2mil. It can be seen from FIG. 1A that because the thickness of the chip 03 is too thin, the overflowing material 02 climbs along the side of the chip 03 to the upper surface of the chip 03 , that is, the active surface of the chip 03 . Since structures such as integrated circuits or electrodes are formed on the upper surface of the chip 03 , the material 02 climbs to the upper surface of the chip 03 and easily causes the chip 03 to open or short circuit. In order to prevent the material 02 from climbing to the surface of the chip 03, the industry further proposes to use a small amount of material 02 to mount the chip 03 on the substrate 01, as shown in Figure 1B, Figure 1B shows a substrate 01 coated with material 02 top view. In Fig. 1B, the area a on the substrate 01 is the area for mounting the chip 03. Assuming that the length and width of the chip 03 are the same as the length and width of the area a, when the material 02 is coated in the area a, when it is close to the area a No material is coated on the edge area of the substrate. When the chip 03 is mounted on the substrate 01, the material 02 cannot overflow to the upper surface of the chip 03. However, when the chip 03 is mounted with a small amount of material as shown in FIG. 1B , it is easy to cause poor heat dissipation of the chip, and also cause the chip 03 to break.
本申请实施例提供的芯片封装结构,可以在保证用于贴装芯片的物料的用量符合封装标准的情况下、物料不会溢出至芯片的有源面,从而可以提高封装芯片的可靠性。The chip packaging structure provided by the embodiment of the present application can ensure that the amount of materials used to mount the chips meets the packaging standards, and the materials will not overflow to the active surface of the chips, thereby improving the reliability of the packaged chips.
本申请实施例提供的芯片封装结构,可以在同一个封装体内封装一个或多个芯片。当同一个封装体内封装有多个芯片时,该多个芯片可以水平间隔设置,还可以堆叠设置。每一个芯片均通过引线和载板等结构与其他芯片连接,以实现多个芯片之间的信号交流。本申请实施例中所述的芯片可以为裸芯片(Die),也可以是裸芯片与其他芯片或部件(有源器件或无源器件等)通过简单封装后形成的芯片,还可以是经过封装之后形成的封装结构,此处不作限定。下面通过图2A-图7所示的实施例,对本申请实施例中所述的芯片封装结构进行描述。The chip packaging structure provided in the embodiment of the present application can package one or more chips in the same package. When multiple chips are packaged in the same package, the multiple chips can be arranged horizontally at intervals or stacked. Each chip is connected to other chips through structures such as leads and carrier boards, so as to realize signal exchange between multiple chips. The chip described in the embodiment of the present application may be a bare chip (Die), or a chip formed by simple packaging of a bare chip and other chips or components (active devices or passive devices, etc.), or may be packaged The encapsulation structure formed later is not limited here. The chip packaging structure described in the embodiment of the present application will be described below through the embodiments shown in FIGS. 2A-7 .
请参考图2A和图2B,图2A是本申请实施例提供的芯片封装结构的一个俯视图,图2B是如图2A所示的芯片封装结构沿AA’的一个剖视图。如图2A和图2B所示,芯片封装结构100包括芯片10和基板11。芯片10具有较薄的厚度,一般小于或者等于2mil。芯片10的表面D1形成有功能结构,该功能结构例如包括但不限于集成电路结构或者电极结构等。其中,电极例如可以包括但不限于晶体管的源极、漏极和栅极。芯片10的表面D2通过胶水12粘接于基板11的表面S1。本申请实施例中所述的胶水12,可以为导电胶或者绝缘胶的一种。优选的,胶水12为导电胶,从而可以提高芯片10的散热性能。基板11的表面S1包括金属垫111。芯片10的表面D2通过胶水12粘接于 金属垫111上。此外,基板11还包括环绕金属垫111的槽型结构112。该槽型结构112的槽底埋于基板11内部,槽口暴露于基板11的表面S1。芯片10的侧边(也可以称为芯片10的边沿)超过槽型结构112的槽口,且芯片10的侧边向基板11的正投影位于槽型结构112内。从图2B中可以看出,芯片10的边沿超过槽型结构112的槽口,且芯片10的边沿向基板11的正投影位于槽型结构112内。Please refer to FIG. 2A and FIG. 2B. FIG. 2A is a top view of the chip packaging structure provided by the embodiment of the present application, and FIG. 2B is a cross-sectional view along AA' of the chip packaging structure shown in FIG. 2A. As shown in FIG. 2A and FIG. 2B , the chip package structure 100 includes a chip 10 and a substrate 11 . Chip 10 has a relatively thin thickness, generally less than or equal to 2mil. The surface D1 of the chip 10 is formed with functional structures, such as but not limited to integrated circuit structures or electrode structures. Wherein, the electrodes may include, but not limited to, the source, the drain and the gate of the transistor, for example. The surface D2 of the chip 10 is adhered to the surface S1 of the substrate 11 by glue 12 . The glue 12 described in the embodiment of the present application may be a kind of conductive glue or insulating glue. Preferably, the glue 12 is conductive glue, so as to improve the heat dissipation performance of the chip 10 . The surface S1 of the substrate 11 includes a metal pad 111 . The surface D2 of the chip 10 is bonded to the metal pad 111 by glue 12. In addition, the substrate 11 further includes a groove structure 112 surrounding the metal pad 111 . The groove bottom of the groove structure 112 is buried inside the substrate 11 , and the groove is exposed on the surface S1 of the substrate 11 . The side of the chip 10 (also called the edge of the chip 10 ) exceeds the notch of the groove structure 112 , and the orthographic projection of the side of the chip 10 to the substrate 11 is located in the groove structure 112 . It can be seen from FIG. 2B that the edge of the chip 10 exceeds the notch of the groove structure 112 , and the orthographic projection of the edge of the chip 10 to the substrate 11 is located in the groove structure 112 .
本申请实施例中,通过在基板11上设置槽型结构112,且芯片10粘接于金属垫111上时、将芯片10的侧边超过槽型结构112的槽口,可以使得溢出的胶水顺着槽壁流于槽型结构112内,避免胶水顺着芯片10的侧边爬至芯片10的表面D1,进而避免由于胶水上芯片表面D1导致芯片开短路。此外,由于金属垫111上设置有承接胶水的槽型结构112,在金属垫111上涂布胶水时,可以不需要减少胶水量,采用标准工艺中所示的胶水量即可,从而避免胶水不足导致芯片10断裂或者散热性能降低。由此,本申请实施例提供的芯片封装结构,可以提高芯片封装的可靠性。In the embodiment of the present application, by setting the groove structure 112 on the substrate 11, and when the chip 10 is bonded to the metal pad 111, the side of the chip 10 exceeds the notch of the groove structure 112, so that the overflowing glue can flow smoothly. Flowing into the groove structure 112 along the groove wall prevents the glue from climbing up to the surface D1 of the chip 10 along the side of the chip 10 , thereby avoiding short-circuiting of the chip caused by the glue on the surface D1 of the chip. In addition, since the metal pad 111 is provided with a groove structure 112 for receiving glue, when coating glue on the metal pad 111, it is not necessary to reduce the amount of glue, and the amount of glue shown in the standard process can be used, thereby avoiding insufficient glue The chip 10 is broken or the heat dissipation performance is reduced. Therefore, the chip packaging structure provided by the embodiment of the present application can improve the reliability of the chip packaging.
需要说明的是,图2B中所示的芯片封装结构100中,芯片10通过胶水12粘接于金属垫111上。在其他可能的实现方式中,图2B中所示的标号12还可以为焊料(例如铅锡焊料),芯片10可以通过焊料焊接于金属垫111上。It should be noted that, in the chip packaging structure 100 shown in FIG. 2B , the chip 10 is bonded to the metal pad 111 by glue 12 . In other possible implementation manners, the reference numeral 12 shown in FIG. 2B may also be solder (such as lead-tin solder), and the chip 10 may be soldered to the metal pad 111 through solder.
请继续参考图2A和2B,如图2B所示的基板11可以包括至少一层布线层,该至少一层布线层中的每一层布线层包括图案化的导电线路以及隔离图案化的导电线路的绝缘材料,图2B中示意性的示出了基板11包括四层布线层的情况,该四层布线层分别设置于基板11的上表面S1、下表面S2、以及位于上表面S1和下表面S2之间的中间两层布线层。用于形成导电线路的导电材料可以是金属,如铜(Cu)、银(Ag)、铝(Al)等金属中的一种或多种的组合,用于形成导电线路的导电材料还可以是氧化钮锡(ITO)、石墨、石墨烯等;绝缘材料可以是无机绝缘材料或有机绝缘材料等。当基板11包括多层布线层时,基板11上还可以设置有过孔(via),该过孔可以包括但不限于:通孔或埋孔等。过孔中可以填充或电镀有导电材料。基板11中的各布线层上的导电线路之间通过过孔连通。本申请实施例中,基板11上、用于连接基板11的表面S1的导电线路与基板11其他布线层上的导电线路的过孔V1,可以设置于槽型结构112的槽底与其他布线层之间。槽型结构112的槽底可以填充有导电材料,基板11的表面S1的导电线路通过槽型结构112以及过孔V1与其他布线层连接,如图2B所示。在图2B中,槽型结构112和过孔V1,用于连通基板11的表面S1上的导电线路和基板11的布线层S3上的导电线路。从图2B中可以看出,槽型结构112的底部与过孔V1连通。通过将槽型结构112设置于过孔V1之上、且槽底与过孔V1连通,可以通过在基板上制备过孔的工序中一并将槽型结构制备出来,简化芯片封装结构的制备工艺。Please continue to refer to FIGS. 2A and 2B. The substrate 11 shown in FIG. 2B may include at least one wiring layer, and each wiring layer in the at least one wiring layer includes patterned conductive lines and isolated patterned conductive lines. 2B schematically shows the situation that the substrate 11 includes four wiring layers, and the four wiring layers are respectively arranged on the upper surface S1, the lower surface S2, and the upper surface S1 and the lower surface of the substrate 11. The middle two wiring layers between S2. The conductive material used to form the conductive circuit can be a metal, such as one or more combinations of metals such as copper (Cu), silver (Ag), aluminum (Al), and the conductive material used to form the conductive circuit can also be Button tin oxide (ITO), graphite, graphene, etc.; the insulating material can be an inorganic insulating material or an organic insulating material, etc. When the substrate 11 includes multiple wiring layers, vias may also be provided on the substrate 11 , and the vias may include but not limited to: through holes or buried holes. The vias may be filled or plated with conductive material. The conductive circuits on the wiring layers in the substrate 11 are connected through via holes. In the embodiment of the present application, on the substrate 11, the via holes V1 for connecting the conductive circuit on the surface S1 of the substrate 11 and the conductive circuit on other wiring layers of the substrate 11 can be arranged at the groove bottom of the groove structure 112 and other wiring layers. between. The groove bottom of the groove structure 112 may be filled with conductive material, and the conductive lines on the surface S1 of the substrate 11 are connected to other wiring layers through the groove structure 112 and the via hole V1 , as shown in FIG. 2B . In FIG. 2B , the groove structure 112 and the via hole V1 are used to connect the conductive circuit on the surface S1 of the substrate 11 with the conductive circuit on the wiring layer S3 of the substrate 11 . It can be seen from FIG. 2B that the bottom of the groove structure 112 communicates with the via hole V1. By arranging the groove structure 112 on the via hole V1, and the bottom of the groove communicates with the via hole V1, the groove structure can be prepared together in the process of preparing the via hole on the substrate, simplifying the preparation process of the chip packaging structure .
进一步的,基板11的表面S1除了形成有用于粘接芯片的金属垫111之外,在金属垫111周围的区域还形成有多个相互绝缘的焊盘113,焊盘113用于与芯片10进行键合。此外,基板11的表面S1未设置焊盘113和金属垫111的部分,被绝缘材料覆盖,该绝缘材料也可以称为阻焊材料,该阻焊材料可以为油墨材料,例如绿油。在图2A和图2B中,芯片10的表面D1设置有多个引出端101。芯片10的各引出端101分别通过引线键合的方式,与基板11上的各焊盘113连接。图2A中示意性的示出了芯片10包括八 个引出端101,基板11上形成有八个焊盘113,芯片10的八个引出端101分别通过引线与基板11上的八个焊盘113一一对应连接。为了提高引线的牢固性,避免引线断裂,一种可能的实现方式中,用于连接芯片10的引出端101与焊盘113的引线可以为金线。从而,芯片10的引出端被引至基板22的表面S1。Further, in addition to forming the metal pad 111 for bonding the chip on the surface S1 of the substrate 11, a plurality of mutually insulated pads 113 are also formed in the area around the metal pad 111, and the pads 113 are used for bonding with the chip 10. Bond. In addition, the part of the surface S1 of the substrate 11 that is not provided with the pad 113 and the metal pad 111 is covered by an insulating material. The insulating material may also be called a solder resist material, and the solder resist material may be an ink material, such as green oil. In FIG. 2A and FIG. 2B , the surface D1 of the chip 10 is provided with a plurality of leads 101 . Each lead-out end 101 of the chip 10 is respectively connected to each pad 113 on the substrate 11 by wire bonding. Fig. 2A schematically shows that the chip 10 includes eight lead-out ends 101, and eight bonding pads 113 are formed on the substrate 11, and the eight lead-out ends 101 of the chip 10 are respectively connected with the eight bonding pads 113 on the substrate 11 through wires. One-to-one connection. In order to improve the firmness of the leads and avoid breakage of the leads, in a possible implementation manner, the leads used to connect the leads 101 of the chip 10 and the bonding pads 113 may be gold wires. Thus, the leads of the chip 10 are drawn to the surface S1 of the substrate 22 .
进一步的,基板11上、与表面S1相对的表面S2还可以设置有球栅阵列114(BGA,ball grid array)如图2C所示,该球栅阵列114包括多个导电凸块。由此,芯片10的引出端101通过引线被引出至基板11的表面S1,然后通过基板11中的布线层由基板11的表面S1引至基板11的表面S2,从而与球栅阵列114中的导电凸块对应连接。此外,为了对芯片10进行更好的保护,还可以在芯片10的表面D1以及基板11的表面S1,设置用于对芯片10、引线、以及基板11表面的焊盘等进行保护的封装材料115,该封装材料115可以为塑封材料,如图2C所示,图2C为芯片封装结构100设置封装材料后的剖视图。Further, a ball grid array 114 (BGA, ball grid array) may also be provided on the surface S2 of the substrate 11 opposite to the surface S1 , as shown in FIG. 2C , the ball grid array 114 includes a plurality of conductive bumps. Thus, the lead-out end 101 of the chip 10 is drawn out to the surface S1 of the substrate 11 through the lead wire, and then is drawn from the surface S1 of the substrate 11 to the surface S2 of the substrate 11 through the wiring layer in the substrate 11, thereby being compatible with the ball grid array 114. The conductive bumps are correspondingly connected. In addition, in order to better protect the chip 10, an encapsulation material 115 for protecting the chip 10, leads, and pads on the surface of the substrate 11 can also be provided on the surface D1 of the chip 10 and the surface S1 of the substrate 11. The encapsulation material 115 may be a plastic encapsulation material, as shown in FIG. 2C , which is a cross-sectional view of the chip packaging structure 100 after the encapsulation material is provided.
本申请实施例中,如图2A-图2C所示的芯片封装结构中,槽型结构112环绕基板11的表面S1上、用于贴装芯片10的区域一周。在其他可能的实现方式中,槽型结构112还可以部分环绕基板11的表面S1上、用于贴装芯片10的区域,如图2D所示,图2D为芯片封装结构100的又一个俯视图。在图2D中,槽型结构112为不连续的结构,槽型结构112包括第一部分1121、第二部分1122、第三部分1123和第四部分1124,第一部分1121~第二部分1124均设置于基板11的表面S1上、用于贴装芯片10的区域周围的区域,各部分之间不连续。此外,当槽型结构112为如图2D所示的形状时,芯片10的边沿向基板11的正投影部分位于槽型结构112的内部。也即是说,如图2D中,芯片10的四个边角向基板11的正投影不位于槽型结构112的内部,芯片10的其余部分向基板11的正投影均位于槽型结构112内部。In the embodiment of the present application, in the chip packaging structure shown in FIGS. 2A-2C , the groove structure 112 surrounds the area on the surface S1 of the substrate 11 for mounting the chip 10 for a week. In other possible implementations, the groove structure 112 may also partially surround the area on the surface S1 of the substrate 11 for mounting the chip 10 , as shown in FIG. 2D , which is another top view of the chip packaging structure 100 . In FIG. 2D, the groove structure 112 is a discontinuous structure. The groove structure 112 includes a first part 1121, a second part 1122, a third part 1123 and a fourth part 1124. The first part 1121 to the second part 1124 are all arranged on In the area around the area on the surface S1 of the substrate 11 where the chip 10 is mounted, each part is discontinuous. In addition, when the groove structure 112 is in the shape shown in FIG. 2D , the orthographic projection of the edge of the chip 10 to the substrate 11 is located inside the groove structure 112 . That is to say, as shown in FIG. 2D , the orthographic projections of the four corners of the chip 10 to the substrate 11 are not located inside the groove structure 112 , and the orthographic projections of the rest of the chip 10 to the substrate 11 are all located inside the groove structure 112 .
如图2A-图2D所示的芯片封装结构100中封装有一个芯片,在一种可能的实现方式中,本申请实施例所述的芯片封装结构,还可以封装有多个芯片,该多个芯片可以在芯片封装结构中沿同一水平面间隔设置。下面以芯片封装结构中封装有两个芯片为例,结合图3A和图3B,对封装有多个芯片的芯片封装结构进行描述。图3A为芯片封装结构200的一个俯视图;图3B是芯片封装结构200的侧视图。如图3A和图3B所示,芯片封装结构200包括基板11、芯片10和芯片20,基板11的表面设置有金属垫1111和金属垫1112,基板11中形成有槽型结构1121和槽型结构1122,槽型结构1121和槽型结构1122的具体形状以及与芯片之间的相对位置关系与图2A和图2B所示的槽型结构112相类似,具体参考槽型结构112的相关描述,不再赘述。槽型结构1121用于盛接芯片10底部溢出的胶水,槽型结构1122用于盛接芯片20底部溢出的胶水。此外,基板11的表面S1还包括多个焊盘113,芯片10的引出端101和芯片20的引出端201均通过引线键合的方式与基板11表面S1的焊盘113对应连接。基板11还包括多层布线层,芯片10和芯片20可以通过基板11上的布线层之间互相连通,以进行信号交流。基板11内的布线层、基板11表面S1的焊盘的以及芯片10和芯片20与基板11上焊盘的连接与图2A和图2B所示的芯片封装结构100中的各部分均相类似,具体参考芯片封装结构100中的相关描述,不再赘述。One chip is packaged in the chip packaging structure 100 shown in FIG. 2A-FIG. The chips may be arranged at intervals along the same horizontal plane in the chip package structure. Taking two chips packaged in the chip package structure as an example, the chip package structure packaged with multiple chips will be described below with reference to FIG. 3A and FIG. 3B . FIG. 3A is a top view of the chip packaging structure 200 ; FIG. 3B is a side view of the chip packaging structure 200 . As shown in FIGS. 3A and 3B , the chip packaging structure 200 includes a substrate 11, a chip 10 and a chip 20, the surface of the substrate 11 is provided with a metal pad 1111 and a metal pad 1112, and a groove structure 1121 and a groove structure are formed in the substrate 11. 1122, the specific shape of the groove structure 1121 and the groove structure 1122 and the relative position relationship with the chip are similar to the groove structure 112 shown in FIG. 2A and FIG. Let me repeat. The groove structure 1121 is used to receive the glue overflowing from the bottom of the chip 10 , and the groove structure 1122 is used to receive the glue overflowing from the bottom of the chip 20 . In addition, the surface S1 of the substrate 11 further includes a plurality of bonding pads 113 , and both the lead-out ends 101 of the chip 10 and the lead-out ends 201 of the chip 20 are correspondingly connected to the bonding pads 113 on the surface S1 of the substrate 11 by wire bonding. The substrate 11 also includes multi-layer wiring layers, and the chip 10 and the chip 20 can communicate with each other through the wiring layers on the substrate 11 for signal communication. The wiring layer in the substrate 11, the bonding pads on the surface S1 of the substrate 11, and the connection between the chip 10 and the chip 20 and the bonding pads on the substrate 11 are similar to each part in the chip package structure 100 shown in FIGS. 2A and 2B , For details, refer to related descriptions in the chip package structure 100 , and details are not repeated here.
以上介绍的图3A和图3B所示的芯片封装结构200中所封装的多个芯片沿同一水平面间隔设置。在一种可能的实现方式中,芯片封装结构所封装的多个芯片也可以沿竖直方向堆叠设置,也即本申请实施例中所述的芯片封装结构还可以为构装堆叠结构。在如图2A-图3B任意实施例的基础上,芯片10之上还可以堆叠多个芯片,本申请实施例对芯片10之上所堆叠的芯片的数目不做限定。下面以芯片10上堆叠一个芯片为例,结合图4A和图4B,对本申请实施例提供的构装堆叠结构的芯片封装结构300进行更为详细的描述。其中,图4A为芯片封装结构300的一个俯视图;图4B是芯片封装结构300的一个侧视图。如图4A和图4B所示,芯片封装结构300包括芯片10、芯片30和基板11,芯片10通过物料贴装于基板11的表面S1,其中基板11的结构、芯片10与基板11之间的相对位置以及芯片10与基板11之间的键合方式均与图2A和图2B所示的芯片封装结构100相同,具体参考芯片封装结构100的相关描述,不再赘述。与以上各实施例均不同的是,芯片10之上堆叠有芯片30,其中,芯片30可以通过环氧树脂膜粘贴于芯片10之上、未设置引出端101的区域。此外,芯片30的表面D3也包括多个引出端301,该多个引出端301通过引线键合的方式,通过引线分别与基板11的表面S1上的焊盘113对应连接。从而,芯片10和芯片30之间通过基板11上的焊盘113、基板11上的重布线层与基板11表面S2的球栅阵列凸块114连接。此外,芯片10和芯片30之间还可以通过重布线层连通,以进行信号交流。The multiple chips packaged in the chip package structure 200 shown in FIG. 3A and FIG. 3B described above are arranged at intervals along the same horizontal plane. In a possible implementation manner, multiple chips packaged by the chip packaging structure may also be stacked vertically, that is, the chip packaging structure described in the embodiment of the present application may also be a stacked structure. On the basis of any of the embodiments shown in FIGS. 2A-3B , multiple chips can be stacked on the chip 10 , and the embodiment of the present application does not limit the number of chips stacked on the chip 10 . Taking one chip stacked on the chip 10 as an example, the chip package structure 300 for building a stacked structure provided by the embodiment of the present application will be described in more detail below with reference to FIG. 4A and FIG. 4B . 4A is a top view of the chip packaging structure 300 ; FIG. 4B is a side view of the chip packaging structure 300 . As shown in FIG. 4A and FIG. 4B, the chip package structure 300 includes a chip 10, a chip 30 and a substrate 11, and the chip 10 is mounted on the surface S1 of the substrate 11 by materials, wherein the structure of the substrate 11, the distance between the chip 10 and the substrate 11 The relative position and the bonding method between the chip 10 and the substrate 11 are the same as those of the chip package structure 100 shown in FIG. 2A and FIG. 2B . For details, refer to the related description of the chip package structure 100 , which will not be repeated here. Different from the above embodiments, the chip 30 is stacked on the chip 10, wherein the chip 30 can be pasted on the chip 10 through an epoxy resin film in the area where the lead-out terminal 101 is not provided. In addition, the surface D3 of the chip 30 also includes a plurality of lead-out ends 301 , and the lead-out ends 301 are respectively connected to the pads 113 on the surface S1 of the substrate 11 through wire bonding. Therefore, the chip 10 and the chip 30 are connected to the ball grid array bumps 114 on the surface S2 of the substrate 11 through the bonding pad 113 on the substrate 11 and the redistribution layer on the substrate 11 . In addition, the chip 10 and the chip 30 may also be connected through a redistribution layer for signal exchange.
如图2A-图4B所示的芯片封装结构中的槽型结构112,其槽底与过孔V1连通,也即槽型结构112用于将基板11的表面S1上的导电线路与基板11其他布线层上的导电线路的连通。在一种可能的实现方式中,本申请实施例中所述的槽型结构,其槽底可以不与过孔连通,也即此时槽型结构112可以不用于连通基板11的表面S1上的导电线路与基板11其他布线层上的导电线路。在该种实现方式中,槽型结构112还可以是通过激光开槽工艺对基板11上的金属垫和绝缘介质进行激光开槽得到的。下面以图5为例,对通过激光开槽工艺得到的槽型结构进行描述。图5是芯片封装结构400的侧视图。在图5中,示意性的示出了槽型结构116穿透金属垫111且槽底进一步向基板11内部延伸。在其他可能的实现方式中,槽型结构116的槽底也可以埋于金属垫111内部并未传透金属垫111。本申请实施例对槽型结构116的深度不做具体限定,根据场景需要确定。The groove structure 112 in the chip packaging structure shown in FIGS. 2A-4B , the bottom of the groove communicates with the via hole V1, that is, the groove structure 112 is used to connect the conductive circuit on the surface S1 of the substrate 11 to the other parts of the substrate 11. The connection of conductive traces on a wiring layer. In a possible implementation, the bottom of the groove structure described in the embodiment of the present application may not be connected with the via hole, that is, the groove structure 112 may not be used to communicate with the via hole on the surface S1 of the substrate 11. The conductive lines and the conductive lines on other wiring layers of the substrate 11 . In this implementation manner, the groove structure 112 may also be obtained by laser grooving the metal pad and the insulating medium on the substrate 11 through a laser grooving process. Taking FIG. 5 as an example, the groove structure obtained through the laser groove process will be described below. FIG. 5 is a side view of a chip package structure 400 . In FIG. 5 , it schematically shows that the groove structure 116 penetrates the metal pad 111 and the bottom of the groove further extends to the inside of the substrate 11 . In other possible implementation manners, the groove bottom of the groove structure 116 may also be buried inside the metal pad 111 without penetrating through the metal pad 111 . In this embodiment of the present application, the depth of the groove structure 116 is not specifically limited, and it is determined according to the needs of the scene.
如上图2A-图5所示的芯片封装结构中,均是以基板11为载板,在基板11表面的金属垫上贴装芯片。也即图2A-图5所示的芯片封装结构均为基板封装结构。本申请实施例一种可能的实现方式中,芯片封装结构也可以为引线框架(lead-frame)封装结构。此时,芯片封装结构中不设置基板,以引线框架作为载板,将芯片通过物料贴装于引线框架的金属垫上。下面结合图6A和图6B,对本申请实施例提供的lead-frame封装结构的芯片封装结构500进行更为详细的描述。其中,图6A为芯片封装结构500的侧视图,图6B是芯片封装结构500的俯视图。如图6A所示,芯片封装结构500包括引线框架43,引线框架43上设置有金属垫41。金属垫41贴装于引线框架43的内表面。金属垫41的表面G1设置有槽型结构411,槽型结构411的形状以及与芯片40之间的相对位置关系与图2A和图2B中所示的槽型结构112以及槽型结构112与芯片10之间的相位位置关系相同,具体参考相关描述,不再赘述。槽型结构411用于盛接溢出的焊料,避免 焊料通过芯片40的侧边爬至芯片40的表面。此外,在引线框架43上、金属垫41的周围还贴装有多个焊盘42。芯片10上还设置有引出端401,通过引线键合的方式,芯片10的各引出端401分别通过引线对应与各焊盘连接。本申请实施例中,芯片封装结构400还包括封装材料,该封装材料包括但不限于:环氧树脂。封装材料用于将芯片40、金属垫41和焊盘42等结构封装于封装壳内部。In the chip packaging structures shown in FIGS. 2A-5 above, the substrate 11 is used as the carrier, and the chip is mounted on the metal pad on the surface of the substrate 11 . That is, the chip packaging structures shown in FIGS. 2A-5 are all substrate packaging structures. In a possible implementation manner of the embodiment of the present application, the chip package structure may also be a lead-frame (lead-frame) package structure. At this time, no substrate is provided in the chip packaging structure, and the lead frame is used as the carrier board, and the chip is mounted on the metal pad of the lead frame through materials. The chip package structure 500 of the lead-frame package structure provided by the embodiment of the present application will be described in more detail below with reference to FIG. 6A and FIG. 6B . 6A is a side view of the chip packaging structure 500 , and FIG. 6B is a top view of the chip packaging structure 500 . As shown in FIG. 6A , the chip package structure 500 includes a lead frame 43 on which a metal pad 41 is disposed. The metal pad 41 is mounted on the inner surface of the lead frame 43 . The surface G1 of the metal pad 41 is provided with a groove structure 411, the shape of the groove structure 411 and the relative positional relationship with the chip 40 are the same as the groove structure 112 shown in Fig. 2A and Fig. 2B and the relationship between the groove structure 112 and the chip. The phase position relationship between 10 is the same, for details, please refer to related descriptions, and details will not be repeated here. The groove structure 411 is used to hold the overflowing solder and prevent the solder from climbing to the surface of the chip 40 through the side of the chip 40. In addition, a plurality of bonding pads 42 are mounted on the lead frame 43 and around the metal pad 41 . Lead-out terminals 401 are also provided on the chip 10 , and each lead-out terminal 401 of the chip 10 is respectively connected to each bonding pad through a lead wire by way of wire bonding. In the embodiment of the present application, the chip packaging structure 400 further includes a packaging material, which includes but not limited to: epoxy resin. The encapsulation material is used for encapsulating structures such as the chip 40 , the metal pad 41 and the pad 42 inside the encapsulation shell.
如图6A所示的芯片封装结构500中,是通过在金属垫41上形成槽型结构411以盛接溢出的焊料。在其他可能的实现方式中,当芯片封装结构为lead-frame封装结构时,还可以在金属垫上设置凸起结构,芯片通过焊料贴装贴装于凸起结构之上,从而可以使得溢出的焊料通过凸起结构的侧壁流至凸起结构的侧边,避免焊料通过芯片的侧边爬至芯片的表面。下面通过图7进行描述。其中,图7为芯片封装结构600的一个侧视图。如图7所示,芯片封装结构600包括芯片60、金属垫61、焊盘62和引线框架63。其中引线框架63、焊盘62的结构以及与其他结构之间的相对位置关系与图6A-图6B所示的芯片封装结构500相同,具体参考相关描述,不再赘述。与如图6A-图6B所示的芯片封装结构500不同的是,在图7中,金属垫61的表面形成有凸起结构611,凸起结构611可以是对金属垫61刻蚀得到的。芯片60通过焊料贴装于凸起结构611的表面。当芯片60贴装于凸起结构611的表面后,芯片60的边沿超过凸起结构611的边沿。从而,溢出的焊料可以顺着凸起结构611的侧壁流淌至金属垫61上、凸起结构611两边的区域,避免焊料通过芯片60的侧边爬至芯片60的表面。In the chip packaging structure 500 shown in FIG. 6A , the groove structure 411 is formed on the metal pad 41 to receive the overflowing solder. In other possible implementations, when the chip package structure is a lead-frame package structure, a bump structure can also be provided on the metal pad, and the chip is mounted on the bump structure by solder mounting, so that the overflowing solder can Flowing through the sidewall of the raised structure to the side of the raised structure prevents the solder from climbing to the surface of the chip through the side of the chip. The following description will be made through FIG. 7 . Wherein, FIG. 7 is a side view of the chip packaging structure 600 . As shown in FIG. 7 , the chip package structure 600 includes a chip 60 , a metal pad 61 , a bonding pad 62 and a lead frame 63 . The structures of the lead frame 63 and the pads 62 and the relative positional relationship with other structures are the same as those of the chip package structure 500 shown in FIGS. 6A-6B . Refer to related descriptions for details and will not be repeated here. Different from the chip packaging structure 500 as shown in FIGS. 6A-6B , in FIG. 7 , a protruding structure 611 is formed on the surface of the metal pad 61 , and the protruding structure 611 may be obtained by etching the metal pad 61 . The chip 60 is mounted on the surface of the protruding structure 611 by solder. After the chip 60 is mounted on the surface of the raised structure 611 , the edge of the chip 60 exceeds the edge of the raised structure 611 . Therefore, the overflowing solder can flow along the sidewall of the raised structure 611 to the area on the metal pad 61 and both sides of the raised structure 611 , preventing the solder from climbing to the surface of the chip 60 through the side of the chip 60 .
如图6A-图7所示的芯片封装结构中均封装有一个芯片,在其他可能的实现方式中,当芯片封装结构为lead-frame封装结构时,芯片封装结构中也可以封装有多个芯片,该多个芯片可以水平间隔设置,或者垂直堆叠设置,当多个芯片水平间隔设置时,芯片封装结构中可以设置有多个用于焊接芯片的金属垫,每一个金属垫的结构可以为图5B或者图6中所示的金属垫的结构,具体参考相关描述,不再赘述。One chip is packaged in each of the chip packaging structures shown in Figures 6A-7. In other possible implementations, when the chip packaging structure is a lead-frame packaging structure, multiple chips can also be packaged in the chip packaging structure. , the plurality of chips can be arranged horizontally at intervals, or vertically stacked. When a plurality of chips are arranged at intervals horizontally, a plurality of metal pads for welding chips can be arranged in the chip package structure, and the structure of each metal pad can be as shown in FIG. 5B or the structure of the metal pad shown in FIG. 6 , please refer to related descriptions for details, and details will not be repeated here.
需要说明的是,如上各实施例中所述的槽型结构为环绕芯片粘接(或者焊接)区域、且各部分均连通的环状槽型结构,在其他可能的实现方式中,环绕芯片粘接(或者焊接)区域的槽型结构也可以为部分连通结构。此外,槽型结构的俯视图也可以为多个互不连通的圆球结构。本申请实施例对槽型结构的具体形状不作具体限定,其可以根据应用场景的需要设置。It should be noted that the groove structure described in the above embodiments is an annular groove structure surrounding the chip bonding (or soldering) area, and each part is connected. The groove structure in the connecting (or welding) area can also be a partially connected structure. In addition, the top view of the groove structure can also be a plurality of disconnected spherical structures. The embodiment of the present application does not specifically limit the specific shape of the groove structure, which can be set according to the needs of the application scenario.
本申请实施例还包括一种电子设备,该电子设备包括如上各实施例所示的芯片封装结构。该芯片封装结构中所封装的芯片可以包括但不限于:片上系统(system on chip)、存储器(memory)、分立器件、应用处理芯片(application processor,AP)、微机电系统(micro-electro-mechanical System,MEMS)、微波射频芯片、专用集成电路(application specific integrated circuit,简称ASIC)等芯片。上述应用处理芯片或专用集成电路在具体应用中可以是中央处理器(central processing unit,CPU)、图像处理器(graphics processing unit,GPU)、人工智能处理器,例如,神经网络处理器(network processing unit,NPU)等。存储器可以是高速缓冲存储器(cache)、随机存取存储器(random access memory,RAM)、只读存储器(read only memory,ROM)或其他存储器。分立器件例如可以包括但不限于例如场效应晶体管、双极性晶体管、集成运算放大器等。此外,电子设备也可以为集成 电路产品,其中,该集成电路产品中除了包括本申请实施例所述的芯片封装结构外,还可以包括其他集成电路,从而使得本申请实施例所示的芯片封装结构与其他集成电路之间相互配合,以实现各种电路功能。The embodiment of the present application also includes an electronic device, and the electronic device includes the chip packaging structure as shown in the above embodiments. The chip packaged in the chip packaging structure may include but not limited to: system on chip (system on chip), memory (memory), discrete device, application processor (application processor, AP), micro-electro-mechanical system (micro-electro-mechanical System, MEMS), microwave radio frequency chip, application specific integrated circuit (ASIC for short) and other chips. The above-mentioned application processing chip or application-specific integrated circuit may be a central processing unit (central processing unit, CPU), an image processing unit (graphics processing unit, GPU), an artificial intelligence processor, for example, a neural network processor (network processing unit) in a specific application. unit, NPU), etc. The memory may be cache memory (cache), random access memory (random access memory, RAM), read only memory (read only memory, ROM), or other memory. Discrete devices may include, but are not limited to, eg, field effect transistors, bipolar transistors, integrated operational amplifiers, and the like, for example. In addition, the electronic device can also be an integrated circuit product, wherein, in addition to the chip package structure described in the embodiment of the application, the integrated circuit product can also include other integrated circuits, so that the chip package shown in the embodiment of the application The structure cooperates with other integrated circuits to realize various circuit functions.
基于如上各实施例所述的芯片封装结构,本申请实施例还提供一种用于芯片封装结构的方法,下面以制备出如图2B所示的芯片封装结构100为例,结合图8所示的流程800,对制备芯片封装结构100的工艺流程进行详细描述。该工艺流程800包括如下步骤:Based on the chip packaging structure described in the above embodiments, the embodiment of the present application also provides a method for the chip packaging structure. The following takes the preparation of the chip packaging structure 100 as shown in FIG. 2B as an example, as shown in FIG. 8 The flow 800 of the present invention describes in detail the process flow of preparing the chip package structure 100 . The process flow 800 includes the following steps:
步骤801,提供一基板11,该基板11可以包括多层布线层。In step 801, a substrate 11 is provided, and the substrate 11 may include multiple wiring layers.
该步骤中,可以采用光刻、显影、刻蚀等标准工艺制备出具有多层布线层的基板11。基板11的具体制备工艺不再详细赘述。其中,每一层布线层均包括图案化的导电线路。基板11的表面S1包括金属垫111、焊盘以及用于隔离金属垫111和焊盘的阻焊材料117。阻焊材料117可以为绿油。该步骤后形成的结构如图9A所示。In this step, standard processes such as photolithography, development, and etching can be used to prepare the substrate 11 with multi-layer wiring layers. The specific preparation process of the substrate 11 will not be described in detail again. Wherein, each wiring layer includes patterned conductive lines. The surface S1 of the substrate 11 includes a metal pad 111 , a pad, and a solder resist material 117 for isolating the metal pad 111 and the pad. The solder resist material 117 may be green oil. The structure formed after this step is shown in Figure 9A.
步骤802,在基板11上形成用于连通基板11上的各层布线层上的导电线路的多个过孔以及槽型结构112。 Step 802 , forming a plurality of via holes and groove structures 112 on the substrate 11 for connecting conductive lines on each wiring layer on the substrate 11 .
可以采用标准工艺形成多个过孔。该多个过孔中,包括用于连接基板11的表面S1的导电线路与基板11其他布线层(例如图9B所示的布线层S3)上的导电线路的过孔V1。对过孔112的顶部靠近表面S1的区域进一步刻蚀,形成槽型结构112。该槽型结构112的槽口暴露于基板11的表面S1,槽底与基板11的其中一层布线层上的导电线路连通。该步骤后,所形成的槽型结构112如图9B所示。Multiple vias can be formed using standard processes. The plurality of via holes include a via hole V1 for connecting the conductive lines on the surface S1 of the substrate 11 and the conductive lines on other wiring layers of the substrate 11 (such as the wiring layer S3 shown in FIG. 9B ). A region near the surface S1 on the top of the via hole 112 is further etched to form a groove structure 112 . The notch of the groove structure 112 is exposed on the surface S1 of the substrate 11 , and the bottom of the groove communicates with the conductive circuit on one of the wiring layers of the substrate 11 . After this step, the formed groove structure 112 is shown in FIG. 9B .
步骤803,在金属垫111上、槽型结构112所环绕的区域涂布导电胶12,如图9C所示。 Step 803 , coating the conductive glue 12 on the metal pad 111 and the area surrounded by the groove structure 112 , as shown in FIG. 9C .
步骤804,在金属垫111上、涂布导电胶12的区域粘接芯片10,其中,芯片10的侧边超过槽型结构112的边缘预设距离,且芯片10的侧边向槽型结构112的正投影落入槽型结构112内部。该步骤后,所形成的槽型结构112如图8D所示。 Step 804, bonding the chip 10 on the metal pad 111 and the area where the conductive glue 12 is coated, wherein the side of the chip 10 exceeds the edge of the groove structure 112 by a predetermined distance, and the side of the chip 10 faces the groove structure 112 The orthographic projection of falls into the groove structure 112 interior. After this step, the formed groove structure 112 is shown in FIG. 8D .
经过步骤803和步骤804,在粘接芯片10的过程中,溢出的导电胶可以顺着槽型结构112的侧壁流至凹槽内,避免顺着芯片10的侧边爬至芯片的表面,提高芯片的可靠性。After step 803 and step 804, in the process of bonding the chip 10, the overflowing conductive glue can flow into the groove along the side wall of the groove structure 112, avoiding climbing to the surface of the chip along the side of the chip 10, Improve chip reliability.
步骤805,采用引线键合工艺,分别将芯片10的表面D1上的引出端与基板11的焊盘113进行键合。该步骤后,所形成的结构如图2B所示。 Step 805 , using a wire bonding process to respectively bond the leads on the surface D1 of the chip 10 to the pads 113 of the substrate 11 . After this step, the resulting structure is shown in Figure 2B.
经过步骤805,芯片10的引出端101通过引线被引出至基板11的表面S1,然后通过基板11中的布线层由基板11的表面S1引至基板11的表面S2,从而可以通过基板11实现与其他芯片或部件之间的连通和信号交流。After step 805, the lead-out end 101 of the chip 10 is led out to the surface S1 of the substrate 11 through the wire, and then is led from the surface S1 of the substrate 11 to the surface S2 of the substrate 11 through the wiring layer in the substrate 11, so that the connection with the substrate 11 can be realized. Communication and signal exchange between other chips or components.
进一步的,为了对芯片10进行更好的保护,在步骤805之后,还可以在芯片10的表面以及基板11的表面,形成用于对芯片10、引线、以及基板11表面的焊盘等进行保护的封装材料,该封装材料可以为塑封材料。Further, in order to better protect the chip 10, after step 805, pads for protecting the chip 10, leads, and the surface of the substrate 11 may also be formed on the surface of the chip 10 and the surface of the substrate 11. The encapsulation material, the encapsulation material may be a plastic encapsulation material.
需要说明的是,通过步骤801-步骤805可以制备出如图2B所示的芯片封装结构,制备如图3B所示的芯片结构200的方法与制备如图2A所示的芯片封装结构的方法相类似,不再赘述。当需要制备如图4A所示的芯片封装结构时,可以在上述步骤803之后、 步骤804之前,在芯片10的表面D1之上进一步通过环氧树脂膜粘接芯片20;在步骤805中,将采用引线键合工艺,将芯片20的表面D3上的引出端与基板11的焊盘113进行键合。当需要制备如图4所示的芯片封装结构时,可以将步骤802替换为如下步骤:采用激光开槽工艺,在金属垫111上进行激光开槽,以形成环绕芯片的贴装区域的槽型结构116。槽型结构116向基板11内凹陷的深度可以不超过金属垫的厚度,也可以为多层布线层(例如两层布线层)的厚度;当需要制备如图6B所示的芯片封装结构时,可以将步骤801中的基板11换成设置有金属垫和焊盘的引线框架,其他工艺相类似,不再赘述。当需要制备如图7所示的芯片封装结构时,可以将步骤801中的基板11换成设置有金属垫和焊盘的引线框架,将上述步骤802替换为如下步骤:刻蚀金属垫,以形成用于贴装芯片的凸起结构。It should be noted that the chip package structure as shown in FIG. 2B can be prepared through steps 801 to 805, and the method for preparing the chip structure 200 as shown in FIG. 3B is similar to the method for preparing the chip package structure as shown in FIG. 2A Similar, no more details. When it is necessary to prepare a chip package structure as shown in FIG. 4A , after the above-mentioned step 803 and before step 804, the chip 20 can be further bonded with an epoxy resin film on the surface D1 of the chip 10; in step 805, the The leads on the surface D3 of the chip 20 are bonded to the pads 113 of the substrate 11 by using a wire bonding process. When it is necessary to prepare the chip package structure as shown in FIG. 4, step 802 can be replaced with the following step: using a laser grooving process, laser grooving is performed on the metal pad 111 to form a groove around the mounting area of the chip structure116. The recessed depth of the groove structure 116 into the substrate 11 may not exceed the thickness of the metal pad, and may also be the thickness of a multi-layer wiring layer (for example, two wiring layers); when it is necessary to prepare a chip package structure as shown in FIG. 6B , The substrate 11 in step 801 can be replaced with a lead frame provided with metal pads and welding pads, and other processes are similar and will not be repeated here. When it is necessary to prepare a chip package structure as shown in FIG. 7, the substrate 11 in step 801 can be replaced with a lead frame provided with metal pads and pads, and the above step 802 can be replaced by the following steps: etching the metal pad to A raised structure for mounting chips is formed.
最后应说明的是:以上各实施例仅用以说明本申请的技术方案,而非对其限制;尽管参照前述各实施例对本申请进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例技术方案的范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and are not intended to limit it; although the application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present application. scope.

Claims (20)

  1. 一种芯片封装结构,其特征在于,包括第一芯片和载板;A chip packaging structure, characterized in that it includes a first chip and a carrier board;
    所述第一芯片通过物料固定于所述载板的第一表面;The first chip is fixed on the first surface of the carrier by materials;
    所述载板包括槽型结构,所述槽型结构的槽底埋于所述载板内部,所述槽型结构的槽口暴露于所述载板的第一表面,所述槽型结构至少部分环绕所述载板的第一表面中、用于固定所述第一芯片的区域;The carrier board includes a groove structure, the groove bottom of the groove structure is buried inside the carrier board, the notch of the groove structure is exposed on the first surface of the carrier board, and the groove structure is at least a region partially surrounding the first surface of the carrier for fixing the first chip;
    所述第一芯片的侧边设置于所述槽型结构的槽口之上,且所述第一芯片的侧边向所述载板的正投影至少部分位于所述槽型结构内。The side of the first chip is disposed on the notch of the groove structure, and the orthographic projection of the side of the first chip to the carrier is at least partly located in the groove structure.
  2. 根据权利要求1所述的芯片封装结构,其特征在于,所述载板包括基板;The chip packaging structure according to claim 1, wherein the carrier comprises a substrate;
    所述基板的第一表面形成有金属垫,所述第一芯片通过所述物料固定于所述金属垫上;A metal pad is formed on the first surface of the substrate, and the first chip is fixed on the metal pad through the material;
    所述槽型结构至少部分环绕所述金属垫。The groove structure at least partially surrounds the metal pad.
  3. 根据权利要求2所述的芯片封装结构,其特征在于,所述基板的第一表面还形成有多个第一焊盘;The chip packaging structure according to claim 2, wherein a plurality of first pads are further formed on the first surface of the substrate;
    所述第一芯片的多个引出端通过引线与所述多个第一焊盘对应连接。The multiple leads of the first chip are correspondingly connected to the multiple first pads through wires.
  4. 根据权利要求2或3所述的芯片封装结构,其特征在于,所述基板还包括多层布线层,所述多层布线层中的每一层布线层包括图案化的导电线路以及隔离所述图案化的导电线路的绝缘材料,各层导电线路之间通过多个过孔连通;The chip packaging structure according to claim 2 or 3, wherein the substrate further comprises a multilayer wiring layer, and each wiring layer in the multilayer wiring layer includes patterned conductive lines and isolates the The insulating material of the patterned conductive circuit, and the conductive circuits of each layer are connected through a plurality of via holes;
    所述基板的第二表面还包括多个导电凸块;The second surface of the substrate further includes a plurality of conductive bumps;
    所述第一芯片的引出端通过所述多层布线层上的导电线路和所述多个过孔,与所述多个导电凸块对应连接。The leads of the first chip are correspondingly connected to the plurality of conductive bumps through the conductive lines on the multilayer wiring layer and the plurality of via holes.
  5. 根据权利要求4所述的芯片封装结构,其特征在于,所述多层布线层包括设置于所述基板的第一表面的第一布线层,所述多个过孔包括第一过孔;The chip packaging structure according to claim 4, wherein the multilayer wiring layer includes a first wiring layer disposed on the first surface of the substrate, and the plurality of via holes include a first via hole;
    所述第一过孔设置于所述槽型结构的槽底与所述其他布线层之间;The first via hole is arranged between the groove bottom of the groove structure and the other wiring layers;
    所述槽型结构的槽底填充有导电材料,所述第一表面的导电线路通过所述槽型结构和所述第一过孔与其他布线层上的导电线路连通。The groove bottom of the groove structure is filled with conductive material, and the conductive circuit on the first surface communicates with the conductive circuit on other wiring layers through the groove structure and the first via hole.
  6. 根据权利要求2-5任一项所述的芯片封装结构,其特征在于,所述芯片封装结构还包括封装材料;The chip packaging structure according to any one of claims 2-5, wherein the chip packaging structure further comprises a packaging material;
    所述封装材料沉积于所述第一芯片和所述基板的第一表面之上,以包裹所述第一芯片和所述基板的第一表面暴露出的部分。The encapsulation material is deposited on the first chip and the first surface of the substrate to wrap the exposed parts of the first chip and the first surface of the substrate.
  7. 根据权利要求1所述的芯片封装结构,其特征在于,所述载板为引线框架;The chip packaging structure according to claim 1, wherein the carrier board is a lead frame;
    所述引线框架包括金属垫;the lead frame includes a metal pad;
    所述槽型结构的槽底埋于所述金属垫的内部,所述槽型结构的槽口暴露于所述金属垫的第一表面,所述槽型结构至少部分环绕所述金属垫中、用于固定所述第一芯片的区域。The groove bottom of the groove structure is buried inside the metal pad, the notch of the groove structure is exposed on the first surface of the metal pad, and the groove structure at least partially surrounds the metal pad, An area for fixing the first chip.
  8. 根据权利要求7所述的芯片封装结构,其特征在于,所述引线框架还包括多个第一焊盘;The chip packaging structure according to claim 7, wherein the lead frame further comprises a plurality of first pads;
    所述多个第一焊盘设置于所述金属垫的侧边;The plurality of first pads are disposed on the side of the metal pad;
    所述第一芯片的多个引出端通过引线与所述多个第一焊盘对应连接。The multiple leads of the first chip are correspondingly connected to the multiple first pads through wires.
  9. 根据权利要求7或8所述的所述的芯片封装结构,其特征在于,所述芯片封装结构还包括封装材料,所述封装材料用于包裹所述第一芯片、所述金属垫和所述多个第一焊盘。The chip packaging structure according to claim 7 or 8, characterized in that, the chip packaging structure further comprises a packaging material for wrapping the first chip, the metal pad and the A plurality of first pads.
  10. 根据权利要求1-9任一项所述的芯片封装结构,其特征在于,所述芯片封装结构还包括第二芯片;The chip packaging structure according to any one of claims 1-9, wherein the chip packaging structure further comprises a second chip;
    所述第二芯片通过环氧树脂膜粘接于所述第一芯片之上。The second chip is bonded on the first chip through an epoxy resin film.
  11. 根据权利要求10所述的芯片封装结构,其特征在于,所述芯片封装结构还包括多个第二焊盘;The chip packaging structure according to claim 10, wherein the chip packaging structure further comprises a plurality of second pads;
    所述第二芯片的引出端通过引线与所述多个第二焊盘对应焊接。Lead ends of the second chip are correspondingly welded to the plurality of second bonding pads through wires.
  12. 一种芯片封装结构,其特征在于,包括芯片和引线框架;A chip packaging structure, characterized in that it includes a chip and a lead frame;
    所述引线框架包括金属垫,所述金属垫的第一表面包括凸起结构;The lead frame includes a metal pad, the first surface of the metal pad includes a raised structure;
    所述芯片通过物料固定于所述凸起结构之上,所述芯片的侧边超过所述凸起结构的边缘。The chip is fixed on the raised structure by materials, and the side of the chip exceeds the edge of the raised structure.
  13. 根据权利要求12所述的芯片封装结构,其特征在于,所述引线框架还包括多个第一焊盘;The chip packaging structure according to claim 12, wherein the lead frame further comprises a plurality of first pads;
    所述多个第一焊盘设置于所述金属垫的侧边;The plurality of first pads are disposed on the side of the metal pad;
    所述第一芯片的多个引出端通过引线与所述多个第一焊盘对应连接。The multiple leads of the first chip are correspondingly connected to the multiple first pads through wires.
  14. 根据权利要求13所述的芯片封装结构,其特征在于,所述芯片封装结构还包括封装材料,所述封装材料用于包裹所述第一芯片、所述金属垫和所述多个第一焊盘。The chip packaging structure according to claim 13, characterized in that, the chip packaging structure further comprises a packaging material for wrapping the first chip, the metal pad and the plurality of first solder pads. plate.
  15. 一种用于制备芯片封装结构的方法,其特征在于,包括:A method for preparing a chip packaging structure, characterized in that, comprising:
    提供一载板;providing a carrier board;
    在所述载板上形成槽型结构,所述槽型结构的槽底埋于所述载板内部,所述槽型结构的槽口暴露于所述载板的第一表面;A groove structure is formed on the carrier, the groove bottom of the groove structure is buried inside the carrier, and the notch of the groove structure is exposed on the first surface of the carrier;
    在所述载板的第一表面上、所述槽型结构至少部分环绕的区域沉积物料;depositing material on the first surface of the carrier in an area at least partially surrounded by the channel structure;
    将芯片通过所述物料固定于所述载板的第一表面,其中,所述芯片的侧边设置于所述槽型结构的槽口之上,且所述芯片的侧边向所述载板的正投影至少部分位于所述槽型结构内。Fixing the chip on the first surface of the carrier plate through the material, wherein the side of the chip is arranged on the notch of the groove structure, and the side of the chip faces the carrier plate The orthographic projection of is at least partially within the channel structure.
  16. 根据权利要求15所述的方法,其特征在于,所述载板为基板,所述基板的第一表面形成有金属垫,所述在所述载板上形成槽型结构包括:The method according to claim 15, wherein the carrier is a substrate, a metal pad is formed on the first surface of the substrate, and forming a groove structure on the carrier comprises:
    采用激光开槽工艺,形成至少部分环绕所述金属垫的槽型结构。A laser groove process is used to form a groove structure at least partially surrounding the metal pad.
  17. 根据权利要求15所述的方法,其特征在于,所述载板为基板,所述基板的第一表面形成有金属垫,所述在所述载板上形成槽型结构包括:The method according to claim 15, wherein the carrier is a substrate, a metal pad is formed on the first surface of the substrate, and forming a groove structure on the carrier comprises:
    在所述基板上形成用于连接所述基板第一表面上的导电线路与所述基板其他布线层上的导电线路的第一过孔;forming a first via hole on the substrate for connecting the conductive lines on the first surface of the substrate to the conductive lines on other wiring layers of the substrate;
    对所述基板上、位于所述第一过孔之上的部分进一步刻蚀以形成所述槽型结构;further etching a portion of the substrate above the first via hole to form the groove structure;
    其中,所述槽型结构的槽底与所述第一过孔连通。Wherein, the groove bottom of the groove structure communicates with the first via hole.
  18. 根据权利要求15所述的方法,其特征在于,所述载板为引线框架,所述在所述载板上形成槽型结构包括:The method according to claim 15, wherein the carrier board is a lead frame, and forming a groove structure on the carrier board comprises:
    刻蚀所述引线框架上的金属垫,以形成所述槽型结构。Etching the metal pad on the lead frame to form the groove structure.
  19. 一种用于制备芯片封装结构的方法,其特征在于,包括:A method for preparing a chip packaging structure, characterized in that, comprising:
    提供一引线框架,所述引线框架上设置有金属垫;providing a lead frame, the lead frame is provided with a metal pad;
    对所述金属垫的第一表面中、围绕用于固定芯片的区域进行刻蚀,以形成凸起结构;performing etching on the first surface of the metal pad, surrounding the area for fixing the chip, to form a raised structure;
    在所述凸起结构上沉积物料;depositing material on the raised structures;
    将所述芯片固定于所述凸起结构上,其中,芯片的侧边超过所述凸起结构的边缘。The chip is fixed on the raised structure, wherein the side of the chip exceeds the edge of the raised structure.
  20. 根据权利要求19所述的方法,其特征在于,所述引线框架上还设置有多个第一焊盘;所述方法还包括:The method according to claim 19, wherein the lead frame is further provided with a plurality of first pads; the method further comprises:
    将所述芯片的多个引出端通过引线与所述多个第一焊盘对应连接。The plurality of lead-out terminals of the chip are correspondingly connected to the plurality of first pads through wires.
PCT/CN2021/116878 2021-09-07 2021-09-07 Chip packaging structure and method for preparing chip packaging structure WO2023035101A1 (en)

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