WO2023033107A1 - 光導波路パッケージおよび発光装置 - Google Patents

光導波路パッケージおよび発光装置 Download PDF

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Publication number
WO2023033107A1
WO2023033107A1 PCT/JP2022/032950 JP2022032950W WO2023033107A1 WO 2023033107 A1 WO2023033107 A1 WO 2023033107A1 JP 2022032950 W JP2022032950 W JP 2022032950W WO 2023033107 A1 WO2023033107 A1 WO 2023033107A1
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Prior art keywords
electrode
light emitting
optical waveguide
light
element mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/032950
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English (en)
French (fr)
Japanese (ja)
Inventor
翔吾 松永
祥哲 板倉
大志 松本
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Kyocera Corp
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Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to EP22864689.9A priority Critical patent/EP4398321A4/en
Priority to US18/688,399 priority patent/US20250023001A1/en
Priority to JP2023545676A priority patent/JPWO2023033107A1/ja
Priority to CN202280059426.7A priority patent/CN117916902A/zh
Publication of WO2023033107A1 publication Critical patent/WO2023033107A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4236—Fixing or mounting methods of the aligned elements
    • G02B6/4244—Mounting of the optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4256—Details of housings
    • G02B6/4257—Details of housings having a supporting carrier or a mounting substrate or a mounting plate
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4266—Thermal aspects, temperature control or temperature monitoring
    • G02B6/4267—Reduction of thermal stress, e.g. by selecting thermal coefficient of materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • G02B6/428—Electrical aspects containing printed circuit boards [PCB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2113/00—Combination of light sources
    • F21Y2113/10—Combination of light sources of different colours
    • F21Y2113/13—Combination of light sources of different colours comprising an assembly of point-like light sources
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12102—Lens
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Definitions

  • the present disclosure relates to optical waveguide packages and light emitting devices.
  • Patent Document 1 A conventional optical waveguide package and a light emitting device are described in Patent Document 1, for example.
  • An optical waveguide package of the present disclosure includes a substrate having a first surface; a device mounting region having a second surface located on the first surface and facing the first surface, and a third surface located opposite to the second surface, and opening to the third surface; a cladding having a core located within the cladding; a first electrode located in the element mounting region and on which a light emitting element is mounted; a second electrode connected to the first electrode and extending outside the element mounting area; The coefficient of thermal expansion of the first electrode is less than the coefficient of thermal expansion of the second electrode.
  • the light emitting device of the present disclosure includes the optical waveguide package, a light emitting element positioned within the element mounting region; and a lens positioned on the optical path of light emitted from the core.
  • FIG. 1 is an exploded perspective view showing a light emitting device according to a first embodiment; FIG. It is the perspective view which abbreviate
  • FIG. 3 is a cross-sectional view of the light-emitting device seen from the cross-sectional line III-III in FIG. 2; 2 is an enlarged cross-sectional view of the vicinity of a light emitting element;
  • FIG. 8 is an enlarged cross-sectional view of the vicinity of the light emitting element in the light emitting device of the second embodiment;
  • FIG. 11 is an enlarged cross-sectional view of the vicinity of a light emitting element in a light emitting device according to a third embodiment; It is a top view which shows the light-emitting device of 4th Embodiment.
  • an optical element is mounted in a recessed cutout provided in a clad on a substrate, and is hermetically sealed with a sealing lid that covers the cutout.
  • the optical element in the notch and the electrical wiring for external connection provided on the surface of the clad are electrically connected by bonding wires.
  • the light-emitting element is a heat source, and the heat generated by the light-emitting element is transferred to the electrodes.
  • a temperature difference occurs between the vicinity of the light emitting element and the outside of the element mounting area, and the substrate or the clad is distorted due to the difference in the amount of thermal expansion. This distortion may cause the optical axis of the light emitting element to deviate, the clad to separate from the substrate, and the like, resulting in deterioration of characteristics and reliability.
  • FIG. 1 is an exploded perspective view showing the light emitting device of the first embodiment
  • FIG. 2 is a perspective view of the light emitting device with the lid omitted.
  • FIG. 3 is a cross-sectional view of the light-emitting device seen from the cross-sectional line III-III in FIG.
  • FIG. 4 is an enlarged cross-sectional view of the vicinity of the light emitting element.
  • the light-emitting device 200 of the first embodiment includes an optical waveguide package 100, a light-emitting element 10 positioned within the element mounting region 8, and a lens 45 positioned on the optical path of light emitted from the core 4.
  • the optical waveguide package 100 includes a substrate 1 having a first surface 2, a second surface 3a located on the first surface 2 and facing the first surface 2, and a third surface located opposite to the second surface 3a. 3b, a clad 3 having an element mounting region 8 opening to the third surface 3b; a core 4 positioned within the clad 3; A first electrode 12 and a second electrode 15 connected to the first electrode 12 and extending to the outside of the element mounting region 8 are provided.
  • the light emitting device 200 further includes a lid 11 that covers the element mounting area 8 .
  • each light emitting element 10 is, for example, a light emitting diode (LED) that emits red (R) light, green (G) light, and blue (B) light.
  • the optical waveguide layer 5 may be configured by integrally coupling the core 4 and the clad 3 .
  • the substrate 1 may be a ceramic wiring substrate whose dielectric layer is made of a ceramic material.
  • ceramic materials used in ceramic wiring boards include aluminum oxide sintered bodies, mullite sintered bodies, silicon carbide sintered bodies, aluminum nitride sintered bodies, and glass ceramic sintered bodies.
  • the substrate 1 may be, for example, an organic wiring substrate whose dielectric layer is made of an organic material.
  • organic wiring boards include printed wiring boards, build-up wiring boards, and flexible wiring boards.
  • organic materials used for organic wiring boards include epoxy resins, polyimide resins, polyester resins, acrylic resins, phenolic resins, and fluorine resins.
  • the core 4 and clad 3 constitute an optical waveguide layer 5 .
  • the optical waveguide layer 5 may be made of, for example, glass such as quartz, resin, or the like.
  • the material constituting the optical waveguide layer 5 may be either glass or resin, or one of the core 4 and the clad 3 may be glass and the other resin.
  • the core 4 and the clad 3 have different refractive indices, and the core 4 has a higher refractive index than the clad 3 . Using this difference in refractive index, the light is totally reflected at the interface between the core 4 and the clad 3 . That is, by forming a path with a material with a high refractive index and surrounding it with a material with a low refractive index, light can be confined within the core 4 with a high refractive index.
  • the core 4 includes a plurality of dividing paths 41a, 41b, 41c having the incident end surfaces 4a to 4c as one end, and a plurality of dividing paths 41a, 41b, 41c between the plurality of incident end surfaces 4a, 4b, 4c and one output end surface 42. It has a multiplexing portion 43 where 41b and 41c meet, and an integration path 44 whose one end is the output end face 42 .
  • Red (R) light, green (G) light, and blue (B) light emitted from each light-emitting element 10 enter split paths 41a, 41b, and 41c from incident end surfaces 4a, 4b, and 4c, and are combined. It is emitted from the emission end face 42 via the wave portion 43 and the integrated path 44 .
  • the light emitting elements 10 are positioned within the element mounting area 8 so that the centers of the incident end faces 4a, 4b, 4c of the division paths 41a, 41b, 41c and the optical axes of the respective light emitting elements 10 are aligned.
  • the element mounting region 8 may be a recess or a through hole that opens to the third surface 3 b of the clad 3 .
  • the element mounting region 8 is a through-hole penetrating from the third surface 3b of the clad 3 to the second surface 3a.
  • the bonding material 17 is positioned on the third surface 3 b of the clad 3 so as to surround the opening of the element mounting region 8 , and the bonding material 17 allows the cover 11 to adhere to the third surface 3 b of the clad 3 . spliced.
  • the lid 11 is made of a glass material such as quartz, borosilicate, sapphire, or the like.
  • the material of the bonding material 17 may be any material that can bond the clad 3 and the lid 11 and hermetically seal them. Metal-based nanoparticle paste, glass paste, or the like can be used.
  • the lens 45 is positioned on the optical path of the light emitted from the core 4, and may collimate or converge the light emitted from the core 4.
  • the lens 45 is, for example, a plano-convex lens having a plane entrance surface and a convex exit surface.
  • the first electrode 12 and the second electrode 15 will be explained.
  • the first electrode 12 is arranged on a portion of the first surface 2 of the substrate 1 that is exposed facing the element mounting region 8 .
  • the first electrode 12 is entirely located within the element mounting region 8 .
  • the second electrode 15 is provided from inside the element mounting area 8 to outside the element mounting area 8 .
  • the coefficient of thermal expansion of the first electrode 12 is smaller than the coefficient of thermal expansion of the second electrode 15 .
  • the light emitting element 10 is mounted on the first electrode 12 , and the temperature of the first electrode 12 becomes higher than that of the second electrode 15 due to the heat generated by the light emitting element 10 during operation.
  • the second electrode 15 is connected to the first electrode 12 , and heat generated by the light emitting element 10 is transferred to the second electrode 15 via the first electrode 12 .
  • the second electrode 15 is located farther from the light emitting element 10 than the first electrode 12 and dissipates heat in a portion located outside the element mounting area 8 , so the temperature of the second electrode 15 is lower than
  • first electrode 12 and the second electrode 15 may be used as a whole. Since the thermal expansion coefficient is the same throughout, the portion where the light emitting element 10 is mounted has a high temperature and a large amount of thermal expansion, and the portion extending outside the element mounting region 8 has a low temperature and a small amount of thermal expansion. This difference in thermal expansion causes distortion of the substrate 1 or clad 3 . In this embodiment, as described above, the thermal expansion coefficient of the first electrode 12 that becomes high temperature is relatively small, and the thermal expansion coefficient of the second electrode 15 that becomes low temperature is relatively large.
  • the difference between the amount of thermal expansion of the first electrode 12 and the amount of thermal expansion of the second electrode 15 becomes small, so that the distortion of the substrate 1 and the clad 3 can be reduced.
  • This reduction in distortion can reduce deterioration in the characteristics and reliability of the light emitting device 200 . Since the first electrode 12 and the second electrode 15 enable external connection without using bonding wires, the optical waveguide package 100 and the light emitting device 200 can be miniaturized.
  • the coefficient of thermal expansion of the first electrode 12 is smaller than the coefficient of thermal expansion of the second electrode 15, the distortion of the substrate 1 and the clad 3 can be reduced as compared with the structure having the same coefficient of thermal expansion.
  • the extent to which the thermal expansion coefficients should be varied may be determined according to the amount of heat generated by the mounted light-emitting element 10, the materials of the substrate 1 and the clad 3, and the like.
  • the constituent materials may be made different.
  • the first electrode 12 may have a three-layer structure of Ti (titanium)/Pt (platinum)/Au (gold), and the second electrode 15 may have a single-layer structure of Al (aluminum).
  • the first electrode 12 includes a first end 12 a connected to the second electrode 15
  • the second electrode 15 includes a second end 15 a connected to the first electrode 12
  • the first electrode 12 includes a third end 12b opposite to the first end 12a, and the light emitting element 10 is mounted on the third end 12b.
  • the second electrode 15 includes a fourth end 15b opposite to the second end 15a, and a central portion 15c connecting the second end 15a and the fourth end 15b.
  • a central portion 15 c of the second electrode 15 is a portion located between the clad 3 and the first surface 2 of the substrate 1 .
  • the first end 12a of the first electrode 12 and the second end 15a of the second electrode 15 are connected so as to face each other.
  • An element bonding material 6 is positioned between the third end portion 12 b of the first electrode 12 and the light emitting element 10 .
  • the light emitting element 10 may be directly bonded to the first electrode 12, the bonding strength is improved by using the element bonding material 6.
  • the element bonding material 6 for example, an Au-Sn (gold-tin) alloy or the like can be used.
  • FIG. 5 is an enlarged cross-sectional view of the vicinity of the light emitting element in the light emitting device of the second embodiment. Since the second embodiment is the same as the first embodiment except that the connection structure of the first electrode 12 and the second electrode 15 is different, description of other configurations is omitted.
  • the first end 12a of the first electrode 12 is positioned to cover the second end 15a of the second electrode 15 .
  • the first electrode 12 and the second electrode 15 are connected by contact between the end surfaces, and the contact area is the area of the end surfaces.
  • the area of the portion where the first end portion 12a covers the second end portion 15a is also the contact area. The connection reliability with the second electrode 15 is improved.
  • the second electrode 15 is formed on the first surface 2 of the substrate 1 and the optical waveguide layer 5 composed of the clad 3 and the core 4 is provided on the first surface 2 including the second electrode 15 .
  • a portion of the clad 3 corresponding to the element mounting region 8 is removed by etching to expose the second electrode 15 and the region of the first surface 2 where the first electrode 12 is formed.
  • a first electrode 12 is formed and connected to a second electrode 15 .
  • the first end portion 12a of the first electrode 12 may be formed so as to cover the second end portion 15a of the second electrode 15 .
  • the surface of the second electrode 15 exposed by forming the element mounting region 8 by etching becomes an etched surface and is roughened.
  • FIG. 6 is an enlarged cross-sectional view of the vicinity of the light emitting element in the light emitting device of the third embodiment. Since the third embodiment is the same as the second embodiment except that the structure of the second electrode 15 is different, description of other configurations is omitted.
  • the second electrode 15 of this embodiment has a step between the central portion 15c and the second end portion 15a. In other words, the thickness of the second end portion 15a is thinner than the thickness of the central portion 15c.
  • the second electrode 15 has a stepped portion, the surface area of the second electrode 15 increases compared to the case where the second electrode 15 does not have a stepped portion, and the amount of heat radiation from the surface of the second electrode 15 increases.
  • the second electrode 15 may further have a step between the central portion 15c and the fourth end portion 15b.
  • the surface area of the second electrode 15 is further increased and the amount of heat radiation from the surface of the second electrode 15 is increased as compared with the case where there is no step.
  • the lifetime is extended in terms of less distortion due to thermal expansion.
  • the element mounting area 8 can be formed by etching. By making the etching amount excessive, the second end portion 15a of the second electrode 15 is overetched and the thickness is reduced. When forming a step on the fourth end portion 15b side, the fourth end portion 15b may also be etched in the same manner.
  • FIG. 7 is a plan view showing the light emitting device of the fourth embodiment.
  • the core 4 is composed of three split paths 41a, 41b, 41c and one integrated path 44 which meets at the multiplexing portion 43 and has one output end surface 42.
  • the light-emitting device provided with the optical waveguide package of the fourth embodiment even if the core 4 is composed of three independent cores 44a, 44b, and 44c as shown in the plan view of FIG. good.
  • the three incident end faces 4a, 44b, and 44c are aligned with the positions of the light emitting elements 10 so that the centers of the incident end faces 4a, 4b, and 4c of the three cores 44a, 44b, and 44c are aligned with the optical axes of the respective light emitting elements 10, respectively.
  • 4b and 4c are the same in that they are located apart from each other.
  • the output end faces 42a, 42b, 42c of the three cores 44a, 44b, 44c are positioned close to each other.
  • Three cores 44a, 44b, and 44c are gathered so as to be close to each other between the incident end faces 4a, 4b, 4c and the emitting end faces 42a, 42b, 42c and extend parallel to the emitting end faces 42a, 42b, 42c.
  • the emitted light from each core 44a, 44b, 44c may be emitted in parallel by one lens 45, for example.
  • the images and the like of the light emitted from the three emission end surfaces 42a, 42b, and 42c may be synthesized by, for example, an external device.
  • a substrate having a first surface; a device mounting region having a second surface located on the first surface and facing the first surface, and a third surface located opposite to the second surface, and opening to the third surface; a cladding having a core located within the cladding; a first electrode located in the element mounting region and on which a light emitting element is mounted; a second electrode connected to the first electrode and extending outside the element mounting area; An optical waveguide package, wherein the coefficient of thermal expansion of the first electrode is smaller than the coefficient of thermal expansion of the second electrode.
  • the first electrode includes a first end connected to the second electrode; the second electrode includes a second end connected to the first electrode;
  • the optical waveguide package according to any one of (1) to (4) above; a light emitting element positioned within the element mounting region; and a lens positioned on an optical path of light emitted from the core.
  • the optical waveguide package and the light emitting device of the present disclosure miniaturization is possible, and deterioration of characteristics and deterioration of reliability can be reduced.
  • the light emitting element 10 is not limited to a light emitting diode, and may be, for example, an LD (Laser Diode), a VCSEL (Vertical Cavity Surface Emitting Laser), or the like.
  • LD Laser Diode
  • VCSEL Vertical Cavity Surface Emitting Laser

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Led Device Packages (AREA)
PCT/JP2022/032950 2021-09-01 2022-09-01 光導波路パッケージおよび発光装置 Ceased WO2023033107A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP22864689.9A EP4398321A4 (en) 2021-09-01 2022-09-01 OPTICAL WAVEGUIDE PACKAGE AND LIGHT-EMITTING DEVICE
US18/688,399 US20250023001A1 (en) 2021-09-01 2022-09-01 Optical waveguide package and light-emitting device
JP2023545676A JPWO2023033107A1 (https=) 2021-09-01 2022-09-01
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10308555A (ja) 1997-05-01 1998-11-17 Nippon Telegr & Teleph Corp <Ntt> ハイブリッド導波形光回路とその製造方法
JP2003229627A (ja) * 2002-02-01 2003-08-15 Hitachi Ltd 光デバイスの実装方法及び光ヘッド装置
WO2012029880A1 (ja) * 2010-08-31 2012-03-08 京セラ株式会社 光伝送基板および光伝送モジュールならびに光伝送基板の製造方法
US20170084530A1 (en) * 2014-03-07 2017-03-23 Bridge Semiconductor Corporation Wiring board having isolator and bridging element and method of making wiring board
JP2018049875A (ja) * 2016-09-20 2018-03-29 スタンレー電気株式会社 半導体発光装置及び車両用灯具
WO2021065948A1 (ja) * 2019-09-30 2021-04-08 京セラ株式会社 光導波路パッケージおよび発光装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006072171A (ja) * 2004-09-06 2006-03-16 Hitachi Ltd 光モジュール
KR101114197B1 (ko) * 2010-08-09 2012-02-22 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
US9893816B2 (en) * 2016-03-25 2018-02-13 Intel Corporation Dynamic beam steering optoelectronic packages
CN114430809A (zh) * 2019-09-30 2022-05-03 京瓷株式会社 光波导封装件以及发光装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10308555A (ja) 1997-05-01 1998-11-17 Nippon Telegr & Teleph Corp <Ntt> ハイブリッド導波形光回路とその製造方法
JP2003229627A (ja) * 2002-02-01 2003-08-15 Hitachi Ltd 光デバイスの実装方法及び光ヘッド装置
WO2012029880A1 (ja) * 2010-08-31 2012-03-08 京セラ株式会社 光伝送基板および光伝送モジュールならびに光伝送基板の製造方法
US20170084530A1 (en) * 2014-03-07 2017-03-23 Bridge Semiconductor Corporation Wiring board having isolator and bridging element and method of making wiring board
JP2018049875A (ja) * 2016-09-20 2018-03-29 スタンレー電気株式会社 半導体発光装置及び車両用灯具
WO2021065948A1 (ja) * 2019-09-30 2021-04-08 京セラ株式会社 光導波路パッケージおよび発光装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4398321A4

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