WO2023031352A1 - Anordnung zur durchführung einer diskreten fouriertransformation - Google Patents
Anordnung zur durchführung einer diskreten fouriertransformation Download PDFInfo
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- WO2023031352A1 WO2023031352A1 PCT/EP2022/074376 EP2022074376W WO2023031352A1 WO 2023031352 A1 WO2023031352 A1 WO 2023031352A1 EP 2022074376 W EP2022074376 W EP 2022074376W WO 2023031352 A1 WO2023031352 A1 WO 2023031352A1
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- Prior art keywords
- matrix
- imaginary
- real
- phase
- series
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- 239000011159 matrix material Substances 0.000 claims abstract description 73
- 230000009466 transformation Effects 0.000 claims description 7
- 230000010363 phase shift Effects 0.000 description 8
- 238000013528 artificial neural network Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000005236 sound signal Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000011426 transformation method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
Definitions
- the present invention relates to a matrix arrangement with a matrix of resistive components (5) whose resistance values represent the coefficients of a discrete Fourier matrix and values representing a first set of input values (1) can be applied to word lines (2) of the matrix and to the bit lines ( 4) the matrix, values representing a second set of output values (3) that can be applied, and the input values (1) are defined by phase or amplitude, and with a current amplifier that sums the output values (3) and can be connected to the bit lines (4). is.
- a discrete Fourier transformation has a wide range of applications, for example in audio and image processing or to simplify convolutions in artificial neural networks.
- An example is the determination of a spectrogram in speech recognition using artificial neural networks.
- Other applications are solving differential equations.
- the discrete Fourier matrix thus has complex entries.
- memristive matrix arrangements have already been proposed, which can carry out vector matrix multiplications very efficiently (WO2017131711A1).
- the coefficients of the discrete Fourier matrix are realized here by means of adjustable resistance values in the matrix, for example with memristors in this case.
- a total of 4 vector matrix multiplications are necessary to carry out a complex vector matrix multiplication, since both the input values and the coefficients of the matrix can be complex:
- Possible delay filters which can contain capacitive elements, are mainly used to compensate for delays in the speed of sound or the circuit board. Phase switches are also primarily used to adapt the filter coefficients and not for the discrete Fourier transformation itself.
- the object of this invention was therefore to enable an implementation which reduces the number of matrices in a discrete Fourier transformation.
- this object is achieved according to an arrangement according to claim 1.
- Embodiments of this are presented in the dependent claims 2-9.
- An arrangement of the type mentioned at the outset is designed according to the invention in that the matrix arrangement also contains capacitive elements, in particular memcapacitive elements, which are designed so that a capacitive value can be stored.
- the input values can also be defined by a number of periods.
- the output values are integrated with each period and the output value increases the more periods there are in the input value.
- Phase-sensitive amplifiers are required to split the output values into imaginary and real parts. This is able to extract the real and imaginary parts of the output values, even if, in contrast to the prior art, the real and imaginary parts are present on the same bit line.
- the use of a phase-sensitive amplifier is explained in a favorable embodiment.
- the phase-sensitive amplifiers contain two on the input side Switches which switch in opposite directions and the switching state is determined by a clock signal and the clock signals for the real part are phase-shifted by 0° and the clock signals for the imaginary part are phase-shifted by 90°, so that half periods of the output signal are always connected to the non-inverting and inverting input of the phase-sensitive amplifier are.
- the output signals of the bit line are ultimately switched in such a way that the real part of the output signal in the amplifier provided for the real part, always whole positive and negative parts, are switched to the non-inverting and inverting input of the amplifier. Overall, this results in a DC component in the output of the amplifier, which can be integrated by a capacitor, for example.
- partially positive and partially negative components are always switched to the amplifier so that both parts balance each other out.
- the imaginary part of the output signal the situation is exactly the opposite, since the clock signal is phase-shifted by 90° between the real part of the amplifier and the imaginary part of the amplifier.
- the amplifier can be a transconductance amplifier, for example, where the input voltage (output signal from the matrix) can be determined by the voltage drop across the parasitic bit line capacitance, and the output current is integrated via an integration capacitor.
- This integration means that, for example, the number of periods in the input signal can also determine its level.
- the resistance of the resistive elements represents the real part of the matrix coefficients and the capacitance of the capacitive elements represents the imaginary part of the matrix coefficients.
- the matrix consists exclusively of capacitive elements, which are divided per matrix coefficient into positive real and negative real, and positive imaginary and negative imaginary capacitive elements, and a series capacitance is connected in series to the ground connection on the real bit lines and the imaginary Bit lines, a series resistance is arranged in series with the ground connection and the voltage drops across the series capacitance and the series resistance of phase-sensitive amplifiers can be measured.
- V s R s *j ⁇ C Im *V in
- the capacitance C Im introduces an imaginary shift and represents the imaginary part.
- the coefficients of the matrix can have a real and an imaginary part even if the memory cells are only capacitive and not made up of resistive and capacitive elements.
- the matrix consists exclusively of resistive elements, which per matrix coefficient are divided into positive real and negative real, as well as positive imaginary and negative imaginary resistances, and there is a series resistance for the ground connection on the real bit lines and the imaginary bit lines, a series capacitance is arranged for the ground connection and the voltage drops across the series resistances and the series capacitances can be measured by the phase-sensitive amplifiers.
- a disadvantage of this and the previous embodiment is that four amplifiers are required in each case, since the real and imaginary parts are only affected by the series capacitances and -resistance arises.
- each series capacitance and series resistance has both a real and an imaginary part due to the phase shift of the input signal, which necessitates the extra number of amplifiers.
- a further embodiment is characterized in that the matrix consists of capacitive elements which, per matrix coefficient, are divided into positive real and negative real, and positive imaginary and negative imaginary capacitances, the real and imaginary capacitances having the same sign, respectively are connected to their own bit line and a 90° phase-shifted input signal can be applied to the imaginary capacitances and two phase-sensitive amplifiers for the real and imaginary output values are connected to the bit lines.
- the phase shift of the matrix was achieved by series capacitances and series resistances.
- the phase shift is achieved by a 90° phase shift in the input signal.
- the array has a second set of word lines to which the quadrature input signal for the imaginary elements of the array is applied. Only the imaginary elements are connected to these word lines. The imaginary and real components of the same sign (positive and negative) each flow together onto a bit line. The advantage of this arrangement is that again only two amplifiers are required.
- the matrix consists of resistive elements divided, per matrix coefficient, into positive real (20) and negative real (21), and positive imaginary (22) and negative imaginary (23) resistance, the real and imaginary Resistors of the same sign are each connected to a separate bit line (4) and a 90° phase-shifted input signal (24) is applied to the imaginary resistors (23) and two phase-sensitive in each case
- Amplifiers (8) for the real and imaginary output values are connected to the bit lines (4).
- This embodiment is identical to the previous one with the difference that the matrix consists of resistive elements.
- 5 shows a capacitive matrix arrangement with a 90° phase-shifted input signal for the imaginary part
- 6 shows a resistive matrix arrangement with a 90° phase-shifted input signal for the imaginary part
- a matrix can be used in which the coefficients are represented by capacitive and resistive elements to represent the real and imaginary parts.
- the horizontal lines are the word lines (2) to which the input values (1) are applied.
- the output values (3) come from the bit lines
- the mixed capacitive-resistive elements (7) can be divided into capacitive (6) and resistive elements (5) and represent the imaginary and real parts respectively. In this figure, a differential approach is used, so that each matrix coefficient consists of four elements. There are two phase-sensitive amplifiers (8) on each bit line to determine the real and imaginary output value.
- Fig. 2 an embodiment for the phase-sensitive amplifier (8) is shown.
- the positive and negative bit lines (4) are subtracted from each other by connecting two switches (9) upstream of the differential amplifier, which work in opposite directions and the connection between the bit lines (4) and the non-inverting (11) and inverting input (12) of the amplifier steer.
- the switches are controlled by a clock signal
- the 90° phase shift always covers the positive and negative part of the signal equally, so that this signal only has an alternating part and is filtered out.
- the left-hand side in FIG. 2 is responsible for the imaginary component of the bit line signal, and the clock signal (10) is phase-shifted by 90°, so that the switching conditions are again identical to the right-hand side.
- phase-sensitive amplifiers (8) shows a matrix with purely capacitive elements (6).
- the phase shift of the elements is achieved by series capacitances (17) and series resistors (19) on the bit line, which are connected to ground (18). The voltage drop across this is detected by the phase-sensitive amplifiers (8).
- capacitive elements (6) are used again, with the 90° phase shift of the imaginary part now being generated by a 90° phase shift of the input signal.
- Fig. 6 shows the same arrangement as in Fig. 5 with resistive elements (5).
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- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biomedical Technology (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Neurology (AREA)
- Computer Hardware Design (AREA)
- Amplifiers (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Networks Using Active Elements (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP22776878.5A EP4396670A1 (de) | 2021-09-01 | 2022-09-01 | Anordnung zur durchführung einer diskreten fouriertransformation |
CN202280059406.XA CN117916709A (zh) | 2021-09-01 | 2022-09-01 | 用于执行离散傅里叶变换的组件 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102021004453.3A DE102021004453A1 (de) | 2021-09-01 | 2021-09-01 | Anordnung zur Durchführung einer diskreten Fouriertransformation |
DE102021004453.3 | 2021-09-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2023031352A1 true WO2023031352A1 (de) | 2023-03-09 |
Family
ID=83438335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2022/074376 WO2023031352A1 (de) | 2021-09-01 | 2022-09-01 | Anordnung zur durchführung einer diskreten fouriertransformation |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP4396670A1 (de) |
CN (1) | CN117916709A (de) |
DE (1) | DE102021004453A1 (de) |
WO (1) | WO2023031352A1 (de) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017131711A1 (en) | 2016-01-28 | 2017-08-03 | Hewlett Packard Enterprise Development Lp | Memristor crossbar array for performing a fourier transformation |
US20190080230A1 (en) * | 2017-09-11 | 2019-03-14 | Samsung Electronics Co., Ltd. | Method and system for performing analog complex vector-matrix multiplication |
CN113241053A (zh) | 2021-04-08 | 2021-08-10 | 中国计量大学 | 简化窄带无次级路径建模有源控制方法 |
-
2021
- 2021-09-01 DE DE102021004453.3A patent/DE102021004453A1/de not_active Withdrawn
-
2022
- 2022-09-01 EP EP22776878.5A patent/EP4396670A1/de active Pending
- 2022-09-01 CN CN202280059406.XA patent/CN117916709A/zh active Pending
- 2022-09-01 WO PCT/EP2022/074376 patent/WO2023031352A1/de active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017131711A1 (en) | 2016-01-28 | 2017-08-03 | Hewlett Packard Enterprise Development Lp | Memristor crossbar array for performing a fourier transformation |
US20190080230A1 (en) * | 2017-09-11 | 2019-03-14 | Samsung Electronics Co., Ltd. | Method and system for performing analog complex vector-matrix multiplication |
CN113241053A (zh) | 2021-04-08 | 2021-08-10 | 中国计量大学 | 简化窄带无次级路径建模有源控制方法 |
Non-Patent Citations (1)
Title |
---|
CAI RUIZHE ET AL: "Memristor-Based Discrete Fourier Transform for Improving Performance and Energy Efficiency", 2016 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI (ISVLSI), IEEE, 11 July 2016 (2016-07-11), pages 643 - 648, XP032958261, DOI: 10.1109/ISVLSI.2016.124 * |
Also Published As
Publication number | Publication date |
---|---|
DE102021004453A1 (de) | 2023-03-02 |
EP4396670A1 (de) | 2024-07-10 |
CN117916709A (zh) | 2024-04-19 |
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