WO2023024059A1 - 显示面板及其制备方法和显示装置 - Google Patents

显示面板及其制备方法和显示装置 Download PDF

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Publication number
WO2023024059A1
WO2023024059A1 PCT/CN2021/114935 CN2021114935W WO2023024059A1 WO 2023024059 A1 WO2023024059 A1 WO 2023024059A1 CN 2021114935 W CN2021114935 W CN 2021114935W WO 2023024059 A1 WO2023024059 A1 WO 2023024059A1
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quantum dot
dot pattern
layer
cross
electrode
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PCT/CN2021/114935
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English (en)
French (fr)
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王好伟
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京东方科技集团股份有限公司
北京京东方技术开发有限公司
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Priority to CN202180002322.8A priority Critical patent/CN116250385A/zh
Priority to US17/795,195 priority patent/US20240215282A1/en
Priority to PCT/CN2021/114935 priority patent/WO2023024059A1/zh
Publication of WO2023024059A1 publication Critical patent/WO2023024059A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Definitions

  • the invention relates to the display field, in particular to a display panel, a manufacturing method thereof, and a display device.
  • Quantum dots are an important fluorescent nanomaterial.
  • the use of quantum dots as the light-emitting layer material of display devices has attracted more and more attention.
  • users have higher and higher requirements for the resolution of display devices. Therefore, how to prepare high-resolution quantum dot display devices has become a research hotspot.
  • an embodiment of the present disclosure provides a method for manufacturing a display panel, including:
  • a pixel defining layer is formed on one side of the base substrate, and the pixel defining layer includes a plurality of pixel receiving holes;
  • the quantum dot layer includes at least two quantum dot patterns capable of emitting light of different colors, the first quantum dot pattern is in one-to-one correspondence with the pixel accommodation holes and is located in the corresponding pixel accommodation holes Inside;
  • the step of forming a quantum dot layer includes: sequentially forming the first quantum dot pattern of the at least two quantum dot patterns, wherein the step of forming a first quantum dot pattern of the quantum dot pattern includes:
  • the material of the quantum dot film includes a quantum dot body and a cross-linkable ligand
  • the step of forming the first quantum dot pattern sequentially forming the at least two quantum dot patterns it also includes:
  • the quantum dot pattern includes a stacked first quantum dot pattern and a second quantum dot pattern, the second quantum dot pattern is located on the side of the first quantum dot pattern away from the substrate, the first quantum dot pattern
  • the material of the dot pattern includes a fluorescent quantum dot body and a cross-linked structure, and the material of the second quantum dot pattern includes a fluorescent quenched quantum dot body and an uncross-linked cross-linkable ligand.
  • the step of performing fluorescence quenching treatment includes:
  • the quantum dot body located on the surface of the first quantum dot pattern and not subjected to cross-linking treatment is subjected to ion exchange treatment.
  • the step of using a treatment solution with metal cations to perform ion exchange treatment on the quantum dot body located on the surface of the first quantum dot pattern and not subjected to cross-linking treatment includes:
  • the display panel is immersed in the treatment solution with metal cations, the concentration of the metal cations in the treatment solution is 0.05mol/L-0.15mol/L, and the soaking time is 5min-15min.
  • the metal cation is selected from at least one of the following cations:
  • the crosslinkable ligand is a photocrosslinkable ligand
  • the step of carrying out partial cross-linking treatment to the quantum dot film comprises:
  • a mask plate is provided on the side of the quantum dot film away from the base substrate, the mask plate includes a light-transmitting part and a light-shielding part, and the mask plate is opposite to the pixel accommodation hole corresponding to the corresponding color;
  • the mask plate is used to expose the pixel accommodation holes corresponding to the corresponding colors, so that the cross-linkable ligands located in the pixel accommodation holes corresponding to the corresponding colors on the quantum dot film are cross-linked.
  • the crosslinkable ligand forms a crosslinked network structure on the surface of the quantum dot body after crosslinking.
  • the step before the step of forming the pixel defining layer on one side of the base substrate, the step further includes: forming a first electrode on the base substrate;
  • the step of forming the quantum dot layer further includes: forming a second electrode on the side of the quantum dot layer away from the substrate.
  • the first electrode is a cathode and the second electrode is an anode
  • the step of forming the first electrode and forming the pixel defining layer further includes:
  • An electron transport layer is formed on a side of the first electrode away from the base substrate.
  • step of forming the quantum dot layer between the step of forming the quantum dot layer and the step of forming the second electrode, further comprising:
  • a hole transport layer and a hole injection layer are sequentially formed on the side of the quantum dot layer away from the substrate.
  • the step of forming the second electrode further comprising:
  • An encapsulation layer is formed on a side of the second electrode away from the base substrate.
  • the embodiment of the present disclosure also provides a display panel, including:
  • the quantum dot layer includes at least two quantum dot patterns capable of emitting light of different colors, the quantum dot patterns are in one-to-one correspondence with the pixel accommodation holes and are located in the corresponding pixel accommodation holes, wherein some of the quantum dots
  • the graphics include a stacked first quantum dot pattern and a second quantum dot pattern, the second quantum dot pattern is located on the surface of the first quantum dot pattern away from the base substrate, and the first quantum dot pattern
  • the material includes a fluorescent quantum dot body and a cross-linked structure, and the material of the second quantum dot pattern includes a fluorescent quenched quantum dot body and an uncross-linked cross-linkable ligand.
  • the first pattern of quantum dots is in direct contact with the second pattern of quantum dots.
  • the material of the quantum dot core in the fluorescence-quenched quantum dot body and/or the material of the quantum dot shell in the fluorescence-quenched quantum dot body includes at least one of the following cations By:
  • the cross-linked structure is a cross-linked network structure.
  • the display panel is a quantum dot light-emitting diode display panel, further comprising:
  • the second electrode is located on the side of the quantum dot layer away from the base substrate.
  • the first electrode is a cathode and the second electrode is an anode
  • the display panel also includes:
  • an electron transport layer located between the first electrode and the quantum dot layer
  • the hole injection layer is located between the hole transport layer and the second electrode.
  • the display panel includes a color conversion layer and a light source, and the color conversion layer is the quantum dot layer.
  • an embodiment of the present disclosure further provides a display device, which includes: the display panel as provided in the second aspect above.
  • FIG. 1 is a schematic diagram of the related art using a direct photolithography process to prepare various quantum dot patterns capable of emitting light of different colors;
  • FIG. 2 is a flow chart of a method for manufacturing a display panel provided by an embodiment of the present disclosure
  • FIG. 3 is a flowchart of a method for forming a first quantum dot pattern of a quantum dot pattern in an embodiment of the present disclosure
  • FIG. 4 is a flowchart of an optional method for implementing step S1022 in an embodiment of the present disclosure
  • FIG. 5 is a flow chart of a process for preparing a first red quantum dot pattern, a first green first quantum dot pattern, and a first blue quantum dot pattern respectively by a photolithography process in an embodiment of the present disclosure
  • FIG. 6 is a schematic diagram of the quenching process of fluorescence performance in an embodiment of the present disclosure.
  • FIG. 7 is a schematic diagram of quantum dots in which crosslinkable ligands are crosslinked to form a network structure in an embodiment of the present disclosure
  • Figure 8 is a schematic diagram of the chemical reaction that uses silver ions in a mixed solution of silver nitrate and methanol to quench the fluorescence properties of quantum dots CdSe/CdS;
  • FIG. 9 is a flow chart of another manufacturing method of a display panel provided by an embodiment of the present disclosure.
  • FIG. 10 is a flow chart of another manufacturing method of a display panel provided by an embodiment of the present disclosure.
  • Fig. 11a is a schematic cross-sectional view of a display panel provided by an embodiment of the present disclosure.
  • Fig. 11a is another schematic cross-sectional view of a display panel provided by an embodiment of the present disclosure.
  • FIG. 12 is another schematic cross-sectional view of a display panel provided by an embodiment of the present disclosure.
  • Figure 1 is a schematic diagram of the related technology using direct photolithography to prepare a variety of quantum dot patterns that can emit different colors of light.
  • Various quantum dot patterns of light Among them, quantum dot patterns that emit light of different colors need to be prepared through corresponding direct photolithography processes.
  • the display panel is divided into a plurality of sub-pixel regions, and each sub-pixel region is configured with a corresponding light emitting color. Taking the situation shown in Figure 1 as an example, the display panel is divided into a red sub-pixel area with a red light output color, a green sub-pixel area with a green light output color, and a blue sub-pixel area with a blue light output color.
  • a quantum dot pattern 31 capable of emitting red light is arranged inside
  • a quantum dot pattern 32 capable of emitting green light is arranged in the green sub-pixel area
  • a quantum dot pattern 33 capable of emitting blue light is arranged in the blue sub-pixel area.
  • the problem of residual quantum dots is likely to occur during the direct photolithography process.
  • Fig. 1 take the order of first preparing the quantum dot pattern 31 capable of exciting red light, then preparing the quantum dot pattern 32 capable of exciting green light, and finally preparing the sequence of quantum dot pattern 33 capable of exciting blue light, Green quantum dots 302a and blue quantum dots 303a will remain in the red sub-pixel area, and blue quantum dots 303a will remain in the green sub-pixel area, that is, there is a color mixing problem, thereby affecting the display color gamut of the display panel.
  • Fig. 2 is a flowchart of a preparation method of a display panel provided by an embodiment of the present disclosure.
  • the display panel is a quantum dot light emitting diode (Quantum Dot Light Emitting Diodes, referred to as QLED) type display panel
  • the preparation Methods include:
  • Step S100 providing a base substrate.
  • the base substrate may be a suitable substrate such as a rigid substrate (such as a glass substrate), a flexible substrate (such as a resin substrate).
  • Step S101 forming a pixel defining layer on one side of the base substrate, the pixel defining layer including a plurality of pixel receiving holes.
  • Step S102 forming a quantum dot layer.
  • the quantum dot layer includes at least two kinds of quantum dot patterns capable of emitting light of different colors, the quantum dot patterns correspond to the pixel accommodation holes one by one, and the quantum dot patterns are located in the corresponding pixel accommodation holes.
  • Step S102 includes step S102a and step S102b described below.
  • Step S102a specifically includes: sequentially forming the first quantum dot pattern of various quantum dot patterns.
  • Fig. 3 is a flow chart of a method for forming a first quantum dot pattern of a quantum dot pattern in an embodiment of the present disclosure, as shown in Fig. 3 , including:
  • Step S1021 forming a quantum dot film capable of exciting light of a corresponding color.
  • the material of the quantum dot film includes a plurality of quantum dots
  • the quantum dots include a quantum dot body and a cross-linkable ligand
  • the cross-linkable ligand is connected to the quantum dot body through a coordination bond.
  • Step S1022 performing partial cross-linking treatment on the quantum dot film, so that the cross-linkable ligands on the quantum dot film located in the pixel accommodation holes corresponding to the corresponding colors are cross-linked.
  • Step S1023 developing the partially cross-linked quantum dot film to form a first quantum dot pattern corresponding to a quantum dot pattern in the pixel accommodation hole corresponding to the corresponding color.
  • the prepared material of the first quantum dot pattern includes: a quantum dot body with fluorescent properties and a cross-linked structure.
  • the above steps S1021 to S1023 can be repeated N times to prepare the first quantum dot patterns of the above N kinds of quantum dot patterns respectively.
  • the steps S1021 to S1023 above need to be repeated three times.
  • Step S102b perform fluorescence performance quenching treatment.
  • step S102a after the preparation of the first quantum dot pattern of various quantum dot patterns is completed through step S102a, the fluorescence properties of the prepared product are quenched so that the quantum dot pattern located on the surface of the first quantum dot pattern.
  • the fluorescent performance of the quantum dot body in the quantum dot that has not been cross-linked is quenched to form a second quantum dot pattern.
  • part of the quantum dot pattern includes a stacked first quantum dot pattern and a second quantum dot pattern
  • the second quantum dot pattern is located on the side of the first quantum dot pattern away from the substrate
  • the material of the first quantum dot pattern includes fluorescent
  • the material of the second quantum dot pattern includes a quantum dot body with fluorescence performance quenched and an uncross-linked cross-linkable ligand.
  • the cross-linked structure formed by the cross-linking of the cross-linkable ligands in the first quantum dot pattern can effectively coat the quantum body body ( That is, the surface of the quantum body body is covered by a resin shell); during the quenching process of the fluorescence performance by step S102b, the fluorescence performance of the quantum body body covered by the cross-linked structure in the first quantum dot pattern will not Affected, the fluorescence properties of the quantum dot body in the quantum dots that are only located on the surface of the first quantum dot pattern and have not undergone cross-linking treatment are quenched, thereby forming the second quantum dot pattern.
  • step S102b through the processing of step S102b, the fluorescence performance of the quantum dot body remaining on the surface of the first quantum dot pattern and capable of exciting light of other colors can be quenched, which can effectively improve or even completely eliminate the color mixing problem, It is beneficial to improve the display color gamut of the display panel.
  • the crosslinkable ligand includes a coordination group, a carbon chain, and a crosslinkable functional group.
  • the coordination group and the crosslinkable functional group are all located on the carbon chain, and the coordination group is connected to the Quantum dot bodies are connected.
  • the carbon chains in the crosslinkable ligands can form a network structure.
  • a crosslinkable functional group is a photocrosslinkable functional group; that is, a crosslinkable ligand is a photocrosslinkable ligand.
  • FIG. 4 is a flow chart of an optional method for implementing step S1022 in an embodiment of the present disclosure. As shown in FIG. 4, in some embodiments, step S1022 includes:
  • the mask plate includes a light-transmitting part and a light-shielding part, and the mask plate is opposite to the pixel accommodation hole corresponding to the corresponding color.
  • the light is irradiated to the pixel accommodation hole corresponding to the red sub-pixel area through the light-transmitting part on the mask, so that the cross-linkable functional groups of the red quantum dots located in the pixel accommodation hole corresponding to the red sub-pixel area Cross-linking occurs.
  • the wavelength of the light used in the exposure process in step S10222 is not specifically limited, and can be set according to the specific type of the cross-linkable ligand.
  • the crosslinkable functional group in the crosslinkable ligand is an ultraviolet curable functional group
  • step S10222 can be performed using ultraviolet rays.
  • the crosslinkable functional groups include at least one of the following functional groups: double bond, ring Oxygen group, carboxyl group, mercapto group, amino group, hydroxyl group.
  • Fig. 5 is a process flow diagram of preparing three kinds of first quantum patterns that can excite red light, green light and blue light respectively by photolithography in the embodiment of the present disclosure. Take the first quantum dot pattern 301 that emits red light, then prepare the first quantum dot pattern 302 that can excite green light, and finally prepare the first quantum dot pattern 303 that can excite blue light as an example.
  • the process of preparing the first quantum dot pattern 301 that can excite red light includes: first forming a red quantum dot film 31a that can excite red light; The part in the corresponding pixel accommodation hole is subjected to exposure treatment; finally, the red quantum dot film 31a after the exposure treatment is developed, so as to obtain a red quantum dot film capable of exciting red light in the pixel accommodation hole corresponding to the red sub-pixel area.
  • the first quantum dot pattern 301 includes: first forming a red quantum dot film 31a that can excite red light; The part in the corresponding pixel accommodation hole is subjected to exposure treatment; finally, the red quantum dot film 31a after the exposure treatment is developed, so as to obtain a red quantum dot film capable of exciting red light in the pixel accommodation hole corresponding to the red sub-pixel area.
  • the process of preparing the first quantum dot pattern 302 that can excite green light includes: first forming the green quantum dot film 32a that can excite green light; The part in the corresponding pixel accommodation hole is subjected to exposure treatment; finally, the green quantum dot film 32a after the exposure treatment is developed, so as to make a green quantum dot film capable of exciting green light in the pixel accommodation hole corresponding to the green sub-pixel area.
  • the first quantum dot pattern 302 At this time, green quantum dots 302a remain on the surface of the first quantum dot pattern 301 capable of exciting red light.
  • the process of preparing the first quantum dot pattern that can excite blue light includes: firstly forming the blue quantum dot film 33a that can excite blue light; The part in the pixel accommodation hole corresponding to the pixel area is subjected to exposure treatment; finally, the blue quantum dot film 33a after the exposure treatment is developed, so as to make a quantum dot film capable of excitation in the pixel accommodation hole corresponding to the blue sub-pixel area.
  • the first quantum dot pattern 303 that emits blue light. At this time, green quantum dots 302a and blue quantum dots 303a remain on the surface of the first quantum dot pattern 301 capable of exciting red light, and blue quantum dots 303a remain on the surface of the first quantum dot pattern 302 capable of exciting green light.
  • Fig. 6 is a schematic diagram of the fluorescent performance quenching process in the embodiment of the present disclosure.
  • the display panel is divided into red sub-pixel areas, green sub-pixel areas and blue sub-pixel areas.
  • the first quantum dot pattern 301 capable of exciting red light is formed in the red sub-pixel area
  • the first quantum dot pattern 302 capable of exciting green light is formed in the green sub-pixel area.
  • a first quantum dot pattern 303 capable of exciting blue light is formed in the blue sub-pixel region.
  • the display panel produced at this time is shown in part (a) of FIG. 6 .
  • Green quantum dots 302a capable of exciting green light and blue quantum dots 303a capable of exciting blue light remain on the surface of the first quantum dot pattern 301 capable of exciting red light obtained through step S102.
  • Blue quantum dots 303a capable of exciting blue light remain on the surface of the first quantum dot pattern 302 emitting green light.
  • the green quantum dots 302a that can excite green light remaining on the surface of the first quantum dot pattern 301 that can excite red light can be made
  • the blue quantum dots 303a that can excite blue light all undergo fluorescence quenching to form the second quantum dot pattern 5; at the same time, they remain on the surface of the first quantum dot pattern 302 that can excite green light and can excite
  • the blue quantum dots 303a that emit blue light also undergo fluorescence quenching to form the second quantum dot pattern 5 .
  • the quantum dot pattern 31 that can excite red light in the red sub-pixel area includes the first quantum dot pattern 301 and the second quantum dot pattern 5 that are stacked, and the quantum dot pattern 31 that can excite green light in the green sub-pixel area.
  • the dot pattern 32 includes a stacked first quantum dot pattern 302 and a second quantum dot pattern 5, and the quantum dot pattern 33 that can excite blue light in the blue sub-pixel region only includes the first quantum pattern 303 and does not include the second quantum dot pattern 303.
  • Quantum dot pattern 5 Quantum dot pattern 5.
  • step S102a after the end of step S102a, there are no quantum dots that have not been cross-linked above the last prepared first quantum dot pattern, so when performing step S102b, The fluorescence performance of the quantum dot body will not be quenched in the pixel accommodation hole where the last prepared first quantum dot pattern is located; that is, after the end of step S102b, the last prepared first quantum dot pattern There will be no second pattern of quantum dots above the pattern of quantum dots. That is, only a part of the quantum dot patterns on the display panel has the stacked first quantum dot pattern and the second quantum dot pattern, and the other part of the quantum dot patterns only has the first quantum dot pattern without the second quantum dot pattern.
  • FIG. 7 is a schematic diagram of quantum dots in which crosslinkable ligands are crosslinked to form a network structure in an embodiment of the present disclosure.
  • the network structure formed by crosslinkable ligands is located outside the quantum dot body.
  • the surface can form a coating on the quantum dot body.
  • the network structure can protect the quantum dot body when step S102b is performed, and can effectively prevent the fluorescence performance of the quantum dot body in the first quantum dot pattern from being quenched.
  • step S102b is performed, and can effectively prevent the fluorescence performance of the quantum dot body in the first quantum dot pattern from being quenched.
  • step S102b may specifically include: step S102b1.
  • Step S102b1 using a treatment solution containing metal cations, to perform ion exchange treatment on the quantum dot body in the quantum dots that is located on the surface of the first quantum dot pattern and has not undergone cross-linking treatment.
  • the quantum dot body has a core-shell structure; in the quantum dot body without cation exchange treatment, both the material of the quantum dot shell and the material of the quantum dot core have cations.
  • the material of the quantum dot core of the red quantum dot is CdSe
  • the cation in it is Cd 2+
  • the material of the quantum dot shell of the red quantum dot is CdS , where the cation is also Cd 2+ ; if the cation Cd 2+ in the quantum dot core and/or quantum dot shell is replaced by other metal cations, then the core-shell structure is still obtained after the replacement, but this core-shell structure Has no fluorescent properties.
  • the quantum dot core of the quantum dot body and the quantum dot shell of the quantum dot body undergoes the above-mentioned cation exchange, its fluorescence performance will be quenched.
  • the cations of the quantum dot shell of the quantum dot body are replaced by corresponding metal cations
  • the cations of the quantum dot core of the quantum dot body are replaced by corresponding metal cations.
  • Figure 8 is a schematic diagram of the chemical reaction that uses silver ions in the mixed solution of silver nitrate and methanol to quench the fluorescence properties of quantum dots CdSe/CdS.
  • the cations Cd2+ in the quantum dot core CdSe and the cations in the quantum dot shell CdS After Cd2+ is replaced by Ag+, a non-fluorescent core-shell structure of Ag 2 Se/Ag 2 S is obtained, that is, the fluorescence performance of the quantum dot material is quenched.
  • the uncrosslinked crosslinkable ligands remaining in the quantum dots on the surface of the first quantum dot pattern cannot affect the quantum dot body. Protection will cause the quantum dot body to undergo cation exchange with the treatment solution, thereby causing the fluorescence performance of the quantum dot body to be quenched; and in the first quantum dot pattern, the network formed by the cross-linkable ligand through cross-linking
  • the network structure can protect the quantum dot body, and the metal cations in the treatment solution cannot penetrate the network structure, thus ensuring that the quantum dot body surrounded by the network structure does not undergo cation exchange, and the fluorescence performance of the quantum dot body is quenched. Nor will it be quenched.
  • the step of ion-exchanging the quantum dot bodies located on the surface of the first quantum dot pattern and not subjected to cross-linking treatment includes: immersing the display panel in a metal In the cation treatment solution, the metal cation concentration in the treatment solution is 0.05mol/L-0.15mol/L, and the soaking time is 5min-15min. In practical applications, the concentration of metal cations in the treatment solution and the soaking time can be designed and adjusted according to actual needs.
  • the surface of the panel is rinsed with a solvent to remove residual metal cations on the surface of the panel, and then dried.
  • the metal cation used in step S102b1 is not limited.
  • the metal cation is selected from at least one of the following cations: Fe 3+ , Cu + , Co 2+ , Ni 2+ , Ag + , Mo 6+ , Na + , K + , Cs + , Ba 2+ , Ca 2+ , Hg 2+ , Sn 2+ , Pb 2+ .
  • FIG. 9 is a flow chart of another method for preparing a display panel provided by an embodiment of the present disclosure. As shown in FIG. 9 , the preparation method includes:
  • Step S200 providing a base substrate.
  • Step S201 forming a first electrode on a base substrate.
  • Step S202 forming a pixel defining layer on a side of the first electrode away from the base substrate, and a plurality of pixel receiving holes are formed on the pixel defining layer.
  • Step S203 sequentially forming first quantum dot patterns of various luminescent patterns in the corresponding pixel accommodation holes.
  • Step S204 performing fluorescence quenching treatment to obtain final structures of various luminescence patterns.
  • step S202 to step S204 reference may be made to the description of step S101 to step S102b in the previous embodiment, and details are not repeated here.
  • Step S205 forming a second electrode on the side of the quantum dot layer away from the substrate.
  • each first quantum dot pattern and the first electrode and the second electrode facing it constitute a quantum dot light-emitting diode (QLED); wherein, one of the first electrode and the second electrode can be One is the cathode and the other is the anode.
  • the manufactured display panel may be a quantum dot light-emitting diode display panel.
  • the cathode can be a planar electrode, and the anode can be a block electrode. All quantum dot light-emitting diodes in the display panel share the same cathode, and the block electrodes correspond to the first quantum dot patterns one by one. Different block electrodes Interval setting.
  • the quantum dot light-emitting diode on the display panel can be a positive light-emitting device or an inverted light-emitting device; for a positive light-emitting device, its anode is closer to the substrate than the cathode (that is, the first electrode is the anode, and the second electrode is the cathode); the cathode of the inverted light-emitting device is closer to the substrate than the anode (that is, the first electrode is the cathode, and the second electrode is the anode).
  • the quantum dot light-emitting diode can be a top-emitting light-emitting device or a bottom-emitting light-emitting device.
  • the quantum dot light-emitting diode when the quantum dot light-emitting diode is a positive top-emitting light-emitting device, the anode is a reflective electrode, and the cathode is a transmissive electrode; when the quantum dot light-emitting diode is a positive bottom-emitting light-emitting device, the anode is a transmissive electrode and the cathode is a reflective electrode.
  • the anode is a transmissive electrode and the cathode is a reflective electrode;
  • the quantum-dot light-emitting diode is an inverted bottom-emitting light-emitting device, the anode is a reflective electrode and the cathode is a transmissive electrode.
  • the light-emitting device not only includes an anode layer, a cathode layer and a light-emitting layer; a hole injection layer (Hole Injection Layer, referred to as HIL), a hole transport layer, etc.
  • Layer Hole Transport Layer, referred to as HTL
  • an electron transport layer (Electron Transport Layer, referred to as ETL) is set between the light-emitting layer and the cathode layer.
  • EIL electron injection layer
  • FIG. 10 is a flow chart of another manufacturing method of a display panel provided by an embodiment of the present disclosure. As shown in FIG. 10 , taking the case where the quantum dot light-emitting diode in the display panel is an inverted bottom-emitting light-emitting device as an example, the Preparation methods include:
  • Step S300 providing a base substrate.
  • Step S301 forming a first electrode on one side of the base substrate.
  • the first electrode is used as a cathode, and the first electrode may be a planar electrode; the material of the first electrode may be a transparent conductive material, such as fluorine-doped tin oxide (FTO), indium tin oxide (ITO) and the like.
  • FTO fluorine-doped tin oxide
  • ITO indium tin oxide
  • Step S302 forming an electron transport layer on the side of the first electrode away from the base substrate.
  • the material of the electron transport layer there is no special limitation on the material of the electron transport layer.
  • zinc oxide ZnO
  • the electron transport layer may also use at least one of magnesium zinc oxide, aluminum zinc oxide, and magnesium aluminum zinc oxide.
  • the colloid containing zinc oxide nanoparticles can be spin-coated on the surface of the first electrode, and then heated at a process temperature of 80° C. to 120° C. to form a film.
  • the speed of the homogenizer can be set within the range of 500 rpm to 2500 rpm to adjust the thickness of the film layer.
  • the electron transport layer as zinc oxide and adopting the solution method to prepare the electron transport layer as an example.
  • the speed can be around 2000rpm; then, place the product on a hot stage at 250-300 degrees for heating annealing, zinc acetate/zinc nitrate decomposes at high temperature to form a zinc oxide film, that is, the electron transport layer.
  • a step of forming an electron injection layer is further included between step S301 and step S302.
  • the material of the electron injection layer includes but not limited to any one of lithium fluoride, sodium fluoride, potassium fluoride, rubidium fluoride, cesium fluoride, lithium oxide, and lithium metaborate.
  • Step S303 forming a pixel defining layer on the side of the electron transport layer away from the base substrate.
  • a plurality of pixel accommodating holes corresponding to the sub-pixel regions are formed on the pixel defining layer.
  • the material of the pixel defining layer may be a material with a light-shielding function or a reflective function, so as to avoid crosstalk between different first quantum dot patterns.
  • Step S304 sequentially forming the first quantum dot pattern of each quantum dot pattern.
  • Step S305 perform fluorescence performance quenching treatment.
  • the quantum dot layer can be produced through step S304 and step S305; for the specific description of step S304 and step S305, please refer to the relevant description of step S102a and step S102b in the previous embodiment, which will not be repeated here.
  • Step S306 sequentially forming a hole transport layer and a hole injection layer on the side of the quantum dot layer away from the substrate.
  • the material of the hole injection layer includes but not limited to poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), polythiophene, polyaniline, polypyrrole, copper phthalocyanine.
  • PEDOT:PSS poly(3,4-ethylenedioxythiophene) polystyrene sulfonate
  • polythiophene polyaniline
  • polypyrrole copper phthalocyanine
  • Materials for the hole transport layer include but are not limited to p-type polymer materials and various p-type low molecular weight materials, such as polythiophene, polyaniline, polypyrrole, poly-3,4-ethylenedioxythiophene and poly (sodium p-styrene sulfonate), 4,4'-cyclohexylenebis[N,N-bis(4-methylphenyl)aniline (TAPC) or 4,4',4"-tri(N-carba Azolyl)triphenylamine (TCTA), a mixture of N,N'-bis(1-naphthyl)-N,N'-diphenylbenzidine (NPB).
  • p-type polymer materials such as polythiophene, polyaniline, polypyrrole, poly-3,4-ethylenedioxythiophene and poly (sodium p-styrene sulfonate), 4,4'-cyclohexylenebis[N,N-
  • Step S307 forming an encapsulation layer on a side of the second electrode away from the base substrate.
  • the encapsulation layer may be an encapsulation cover plate, and the encapsulation cover plate and the second electrode may be fixed by using ultraviolet curing adhesive, and the ultraviolet curing adhesive may also play a certain encapsulation function.
  • FIG. 11 a is a schematic cross-sectional view of a display panel provided by an embodiment of the present disclosure. As shown in FIG. 11 a , the display panel includes: a base substrate 1 , a pixel defining layer 2 and a quantum dot layer 3 .
  • the pixel defining layer 2 includes a plurality of pixel accommodation holes;
  • the quantum dot layer 3 includes at least two kinds of quantum dot patterns 31, 32, 33 capable of emitting light of different colors (the figure that can excite red light is exemplarily drawn in the drawings).
  • the quantum dot patterns 31, 32, 33 are in one-to-one correspondence with the pixel accommodation holes and are located in the corresponding pixel accommodation holes Inside.
  • some quantum dot patterns 301, 302 include stacked first quantum dot patterns 301, 302 and second quantum dot patterns 5, and the second quantum dot patterns 5 are located on a side of the first quantum dot patterns 301, 302 away from the base substrate
  • the material of the first quantum dot pattern 301, 302 includes a fluorescent quantum dot body and a cross-linked structure
  • the material of the second quantum dot pattern 5 includes a fluorescence quenched quantum dot body and an uncrosslinked cross-linked structure.
  • the first quantum dot pattern 301, 302 is in direct contact with the corresponding second quantum dot pattern 5.
  • the cross-linked structure is a cross-linked network structure.
  • the fluorescent performance is quenched so that the quantum dot patterns located in the first quantum dot patterns 301, 301, 301,
  • the fluorescent properties of the quantum dot body in the quantum dots on the surface of 302 and 303 that have not been cross-linked are quenched to form the second quantum dot pattern 5, which can effectively improve or even completely eliminate the color mixing problem, and is conducive to improving the display color gamut of the display panel .
  • the quantum dot pattern 31 that can excite red light shown in the drawings includes a first quantum dot pattern 301 and a second quantum dot pattern 5 that are stacked, and the quantum dot pattern 32 that can excite green light includes a stacked
  • the first quantum dot pattern 302 and the second quantum dot pattern 5 are set, and the quantum dot pattern 33 capable of exciting blue light only includes the first quantum dot pattern and does not include the second quantum dot pattern 5. This situation is only an example. , which will not limit the technical solution of the present disclosure.
  • the fluorescent properties of the quantum dot body in the quantum dots located on the surface of the first quantum dot pattern 301, 302, 303 and not subjected to cross-linking treatment can be quenched by ion exchange to form the second quantum dot Pattern 2.
  • the cations in the quantum dot core in the quantum dot body can be replaced, the cations in the quantum dot shell in the quantum dot body can also be replaced, and the quantum dot core and the quantum dot shell in the quantum dot body can also be replaced at the same time. cation. That is to say, in the formed second quantum dot pattern 5 , the cations in the quantum dot core in the quantum dot body and the cations in the quantum dot shell can be the same or different.
  • the material of the quantum dot core in the fluorescently quenched quantum dot body and/or the material of the quantum dot shell in the fluorescently quenched quantum dot body includes the following At least one of the cations:
  • the display panel includes a color conversion layer and a light source 50, and the color conversion layer is a quantum dot layer 3.
  • the light source can emit light of a preset color, and the quantum dot patterns 31 , 32 , 33 in the quantum dot layer 3 can generate light of other colors under the excitation of the light of the preset color.
  • the light source 50 may be a light-emitting device such as an OLED or a Micro LED.
  • Fig. 11b is another schematic cross-sectional view of the display panel provided by the embodiment of the present disclosure. As shown in Fig. 11a, it is different from the "photoexcitation" method shown in Fig. 11b to make the quantum dot pattern emit light. In Fig. 11b, " Electric excitation" way to make the quantum dot pattern emit light.
  • the display panel is a quantum dot light-emitting diode display panel, and the display panel also includes a first electrode 6 and a second electrode 7; wherein, the first electrode 6 is located between the base substrate 1 and the quantum dot layer 3, and the second electrode 7 Located on the side of the quantum dot layer 3 away from the base substrate 1 .
  • One of the first electrode 6 and the second electrode 7 is an anode, and the other is a cathode.
  • Each first quantum dot pattern and its opposite first electrode and second electrode form a quantum dot light emitting diode (QLED).
  • QLED quantum dot light emitting diode
  • Fig. 12 is another schematic cross-sectional view of the display panel provided by the embodiment of the present disclosure. As shown in Fig. 12, the display panel not only includes the base substrate 1 in Fig.
  • the layer 3 and the second electrode 7 further include: an electron transport layer 8 , a hole transport layer 9 and a hole injection layer 10 .
  • the first electrode 6 is a cathode
  • the second electrode 7 is an anode
  • the electron transport layer 8 is located between the first electrode 6 and the quantum dot layer 3
  • the hole transport layer 9 is located between the quantum dot layer 3 and the quantum dot layer 3.
  • the hole injection layer 10 is located between the hole transport layer 9 and the second electrodes 7 .
  • an electron injection layer (not shown) is further disposed between the first electrode 6 and the electron transport layer 8 .
  • the display device may further include: an encapsulation layer 11, which may specifically be an encapsulation cover plate; the encapsulation cover plate and the second electrode 7 may be fixed with an ultraviolet curing adhesive 12, and the ultraviolet curing adhesive 12 may also be play a certain role in encapsulation.
  • an encapsulation layer 11 which may specifically be an encapsulation cover plate
  • the encapsulation cover plate and the second electrode 7 may be fixed with an ultraviolet curing adhesive 12, and the ultraviolet curing adhesive 12 may also be play a certain role in encapsulation.
  • an embodiment of the present disclosure further provides a display device, the display device includes a display panel, and the display panel adopts the display panel provided in the previous embodiments.
  • the display device may be any product or component with a display function such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, and the like.

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Abstract

一种显示面板的制备方法以及一种显示面板和显示装置。其中，制造方法包括：在衬底基板的一侧形成像素界定层；形成量子点层，具体包括：依次形成至少两种量子点图形的第一量子点图案，其中形成一种量子点图形的第一量子点图案的步骤包括：形成能够激发出相应颜色的光的量子点膜，量子点膜的材料包括量子点本体和可交联配体；对量子点膜进行局部交联处理；对局部交联处理后的量子点膜进行显影处理，以在相应颜色所对应的像素容纳孔中形成第一量子点图案；在形成各种量子点图形的第一量子点图案的步骤之后还包括：进行荧光性能淬灭处理，以使得位于第一量子点图案表面且未进行交联处理的量子点内量子点本体的荧光性能淬灭。

Description

显示面板及其制备方法和显示装置 技术领域
本发明涉及显示领域，特别涉及一种显示面板及其制备方法和显示装置。
背景技术
量子点是一种重要的荧光纳米材料。在显示领域，将量子点作为显示设备的发光层材料，越来越受到关注。随着科技的发展，用户对显示设备的分辨率的要求越来越高。因此，如何制备高分辨率的量子点显示设备成为研究的热点。
将量子点材料薄膜进行图案化处理以实现显示设备的高分辨率是一种切实可行的方法，但是量子点材料薄膜图案化的过程中存在混色问题，影响显示设备的显示效果。
发明内容
第一方面，本公开实施例提供了一种显示面板的制备方法，其中，包括：
提供一衬底基板；
在所述衬底基板的一侧形成像素界定层，所述像素界定层包括多个像素容纳孔；
形成量子点层，所述量子点层包括能够发出不同颜色的光的至少两种量子点图形，所述第一量子点图案与所述像素容纳孔一一对应且位于对应的所述像素容纳孔内；
形成量子点层的步骤包括：依次形成所述至少两种量子点图形的第一量子点图案，其中，形成一种所述量子点图形的第一量子点图案的步骤包括：
形成能够激发出相应颜色的光的量子点膜，所述量子点膜的材料包括量子点本体和可交联配体；
对所述量子点膜进行局部交联处理，以使得所述量子点膜上位于相应颜色所对应的像素容纳孔中的可交联配体发生交联；
对局部交联处理后的量子点膜进行显影处理，以在相应颜色所对应的像素容纳孔中形成所述第一量子点图案；
在形成依次形成所述至少两种量子点图形的第一量子点图案的步骤之后，还包括：
进行荧光性能淬灭处理，以使得位于所述第一量子点图案表面且未进行交联处理的量子点内量子点本体的荧光性能淬灭，形成所述至少两种量子点图形，其中，部分所述量子点图形包括层叠的第一量子点图案和第二量子点图案，所述第二量子点图案位于所述第一量子点图案远离所述衬底基板的一侧，所述第一量子点图案的材料包括具有荧光性能的量子点本体和交联结构，所述第二量子点图案的材料包括荧光性能淬灭的量子点本体和未交联的可交联配体。
在一些实施例中，所述进行荧光性能淬灭处理的步骤包括：
利用具有金属阳离子的处理溶液，对位于所述第一量子点图案表面且未进行交联处理的量子点内量子点本体进行离子交换处理。
在一些实施例中，所述利用具有金属阳离子的处理溶液，对位于所述第一量子点图案表面且未进行交联处理的量子点内量子点本体进行离子交换处理的步骤包括：
将显示面板浸没在具有金属阳离子的处理溶液内，所述处理溶液内的所述金属阳离子的浓度为0.05mol/L～0.15mol/L，浸泡时间为5min～15min。
在一些实施例中，所述金属阳离子选自以下阳离子中的至少一者：
Fe 3+、Cu +、Co 2+、Ni 2+、Ag +、Mo 6+、Na +、K +、Cs +、Ba 2+、Ca 2+、Hg 2+、Sn 2+、 Pb 2+。
在一些实施例中，所述可交联配体为可光照交联配体；
对所述量子点膜进行局部交联处理的步骤包括：
在所述量子点膜远离所述衬底基板的一侧设置掩膜版，所述掩膜版包括透光部和遮光部，所述掩膜版与相应颜色所对应的像素容纳孔正对；
利用所述掩膜版对与相应颜色所对应的像素容纳孔进行曝光，以使得所述量子点膜上位于相应颜色所对应的像素容纳孔中的可交联配体发生交联。
在一些实施例中，在对所述量子点膜进行局部交联处理的过程中，所述可交联配体交联后在所述量子点本体表面形成交联的网状结构。
在一些实施例中，在衬底基板的一侧形成像素界定层的步骤之前，还包括：在衬底基板上形成第一电极；
在形成量子点层的步骤之后，还包括：在量子点层远离衬底基板的一侧形成第二电极。
在一些实施例中，所述第一电极为阴极，所述第二电极为阳极；
在形成第一电极的步骤与形成像素界定层之间还包括：
在所述第一电极远离衬底基板的一侧形成电子传输层。
在一些实施例中，在形成量子点层的步骤与形成第二电极的步骤之间，还包括：
在量子点层远离衬底基板的一侧依次形成空穴传输层和空穴注入层。
在一些实施例中，在形成第二电极的步骤之后，还包括：
在所述第二电极远离衬底基板的一侧形成封装层。
第二方面，本公开实施例还提供了一种显示面板，包括：
衬底基板；
像素界定层，位于所述衬底基板上，所述像素界定层包括多个像素 容纳孔；
量子点层，包括能够发出不同颜色光的至少两种量子点图形，所述量子点图形与所述像素容纳孔一一对应且位于对应的所述像素容纳孔内，其中，部分所述量子点图形包括层叠的第一量子点图案和第二量子点图案，所述第二量子点图案位于所述第一量子点图案远离所述衬底基板的一侧表面，所述第一量子点图案的材料包括具有荧光性能的量子点本体和交联结构，所述第二量子点图案的材料包括荧光性能淬灭的量子点本体和未交联的可交联配体。
在一些实施例中，所述第一量子点图案与第二量子点图案直接接触。
在一些实施例中，所述荧光性能淬灭的量子点本体中的量子点核的材料和/或所述荧光性能淬灭的量子点本体中的量子点壳的材料包括以下阳离子中的至少一者：
Fe 3+、Cu +、Co 2+、Ni 2+、Ag +、Mo 6+、Na +、K +、Cs +、Ba 2+、Ca 2+、Hg 2+、Sn 2+、Pb 2+。
在一些实施例中，所述交联结构为交联的网状结构。
在一些实施例中，所述显示面板为量子点发光二极管显示面板，还包括：
第一电极，位于所述衬底基板与所述量子点层之间；
第二电极，位于所述量子点层远离所述衬底基板的一侧。
在一些实施例中，所述第一电极为阴极，所述第二电极为阳极；
所述显示面板还包括：
电子传输层，位于所述第一电极与所述量子点层之间；
空穴传输层，位于所述量子点层与所述第二电极之间；
空穴注入层，位于所述空穴传输层与所述第二电极之间。
在一些实施例中，所述显示面板包括色转换层和光源，所述色转换层为所述量子点层。
第三方面，本公开实施例还提供了一种显示装置，其中，包括：如上述第二方面中提供的所述显示面板。
附图说明
图1为相关技术采用直接光刻工艺来制备能够发出不同颜色光的多种量子点图形的一种示意图；
图2为本公开实施例提供的显示面板的一种制备方法的流程图；
图3为本公开实施例中形成一种量子点图形的第一量子点图案的一种方法流程图；
图4为本公开实施例中实现步骤S1022的一种可选方法流程图；
图5为本公开实施例中通过光刻工艺分别制备第一红色量子点图案、第一绿色第一量子点图案和第一蓝色量子点图案的一种工艺流程图；
图6为本公开实施例中进行荧光性能淬灭处理过程的一种示意图；
图7为本公开实施例中可交联配体发生交联形成网状结构的量子点的示意图；
图8为使用硝酸银甲醇混合溶液中的银离子使量子点CdSe/CdS荧光性能淬灭的化学反应示意图；
图9为本公开实施例提供的显示面板的另一种制备方法的流程图；
图10为本公开实施例提供的显示面板的又一种制备方法的流程图；
图11a为本公开实施例提供的显示面板的一种截面示意图；
图11a为本公开实施例提供的显示面板的另一种截面示意图；
图12为本公开实施例提供的显示面板的又一种截面示意图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图对本发明提供的一种显示面板及其制备方法和显示装置进行详细描 述。
图1为相关技术采用直接光刻工艺来制备能够发出不同颜色光的多种量子点图形的一种示意图，如图1所示，为实现多彩显示，需要在显示面板中制备出能够发出不同颜色光的多种量子点图形。其中，发出不同颜色光的量子点图形需要分别通过对应的直接光刻工艺来制备。
显示面板划分有多个子像素区，每个子像素区配置有对应的出光颜色。以图1中所示情况为例，显示面板划分有出光颜色为红色的红色子像素区、出光颜色为绿色的绿色子像素区以及出光颜色为蓝色的蓝色子像素区，红色子像素区内设置有能够激发出红色光的量子点图形31，绿色子像素区内设置有能够发出绿色光的量子点图形32，蓝色子像素区内设置有能够发出蓝色光的量子点图形33。
在分别制备量子点图形31、量子点图形32和量子点图形33过程中，由于不同类型的量子点直接接触，导致在进行直接光刻工艺过程中容易出现量子点残留的问题。参见图1所示，以先制备能够激发出红色光的量子点图形31，再制备能够激发出绿色光的量子点图形32，最后制备能够激发出蓝色光的量子点图形33的顺序为例，在红色子像素区内会残留有绿色量子点302a和蓝色量子点303a，在绿色子像素区内会残留有蓝色量子点303a，即存在混色问题，从而影响显示面板的显示色域。
为有效改善甚至完全解决相关技术中存在的上述技术问题，本公开提供了相应的解决方案，下面将结合具体实施例进行详细描述。
图2为本公开实施例提供的显示面板的一种制备方法的流程图，如图2所示，该显示面板为量子点发光二极管(Quantum Dot Light Emitting Diodes，简称QLED)型显示面板，该制备方法包括：
步骤S100、提供一衬底基板。
衬底基板可以为硬质基板(例如玻璃基板)、柔性基板(例如树脂基板)等合适的基板。
步骤S101、在衬底基板的一侧形成像素界定层，像素界定层包括多个像素容纳孔。
步骤S102、形成量子点层。
其中，量子点层包括能够发出不同颜色光的至少两种量子点图形，量子点图形与像素容纳孔一一对应，量子点图形位于对应的像素容纳孔内。
步骤S102包括下述步骤S102a和步骤S102b。
步骤S102a具体包括：依次形成各种量子点图形的第一量子点图案。
图3为本公开实施例中形成一种量子点图形的第一量子点图案的一种方法流程图，如图3所示，包括：
步骤S1021、形成能够激发出相应颜色的光的量子点膜。
其中，量子点膜的材料包括多个量子点，量子点包括量子点本体和可交联配体，可交联配体通过配位键与量子点本体相连。
步骤S1022、对量子点膜进行局部交联处理，以使得量子点膜上位于相应颜色所对应的像素容纳孔中的可交联配体发生交联。
步骤S1023、对局部交联处理后的量子点膜进行显影处理，以在相应颜色所对应的像素容纳孔中形成对应的一种量子点图形的第一量子点图案。
通过上述步骤S1021～步骤S1023，即可在对应的像素容纳孔内形成对应的一种第一量子点图案。此时，所制得的第一量子点图案的材料包括：具有荧光性能的量子点本体和交联结构。
在一些实施例中，若量子点层包括发出不同颜色光的N种量子点图形，则可重复执行N次上述步骤S1021～步骤S1023以分别制备出上述N种量子点图形的第一量子点图案。例如，若制备图1中所示红色量子点图形、绿色量子点图形和蓝色量子点图形，则需要重复执行3次上述步骤S1021～步骤S1023。
再次参见相关技术中所描述，在分别制备各种红色量子点图形的过程中，由于不同类型的量子点直接相接触，这容易导致在显影处理后出现量子点残留，从而产生混色的问题。
步骤S102b、进行荧光性能淬灭处理。
在本公开实施例中，在通过步骤S102a完成各种量子点图形的第一量子点图案的制备之后，再对所制得的产品进行荧光性能淬灭处理，以使得位于第一量子点图案表面且未进行交联处理的量子点内量子点本体的荧光性能淬灭并形成第二量子点图案。
通过步骤S102b处理后，可以得到各种量子点图形。其中，部分量子点图形包括层叠的第一量子点图案和第二量子点图案，第二量子点图案位于第一量子点图案远离衬底基板的一侧，第一量子点图案的材料包括具有荧光性能的量子点本体和交联结构，第二量子点图案的材料包括荧光性能淬灭的量子点本体和未交联的可交联配体。
在本公开实施例中，在进行荧光性能淬灭处理过程中，由于第一量子点图案内的可交联配体发生交联所形成的交联结构能够对量子体本体进行有效的包覆(即，量子体本体表面有树脂壳体包覆)；在通过步骤S102b进行荧光性能淬灭处理过程中，位于第一量子点图案内被交联结构所包覆盖的量子体本体的荧光性能不会受到影响，因此仅位于第一量子点图案表面且未进行交联处理的量子点内量子点本体的荧光性能发生淬灭，从而形成第二量子点图案。
在本公开实施例中，通过步骤S102b的处理可使得残留于第一量子点图案表面且能够激发出其他颜色光的量子点本体的荧光性能发生淬灭，可以有效改善、甚至彻底消除混色问题，有利于提升显示面板的显示色域。
在本公开实施例中，对于可交联配体的具体结构不做特殊的限定。在一些实施例中，可交联配体包括配位基团、碳链、以及可交联官能团， 配位基团和可交联官能团均位于碳链上，配位基团通过配位键与量子点本体相连。通过可交联官能团的交联，可交联配体中的碳链可以形成网状结构。
在本公开实施例中，对步骤S1022中如何实现“局部交联处理”不做特殊的限定。可以根据可交联官能团的特性来确定“局部交联处理”的具体实施方式。在显示面板的制造过程中，多用到光刻工艺。在本公开中，可交联官能团为可光照交联的官能团；即，可交联配体为可光照交联配体。
图4为本公开实施例中实现步骤S1022的一种可选方法流程图，如图4所示，在一些实施例中，步骤S1022包括：
S10221、在量子点膜远离衬底基板的一侧设置掩膜版，掩膜版包括透光部和遮光部，掩膜版与相应颜色所对应的像素容纳孔正对。
S10222、利用掩膜版对与相应颜色所对应的像素容纳孔进行曝光，以使得量子点膜上位于相应颜色所对应的像素容纳孔中的可交联配体发生交联。
作为一个示例，在制备图4中所示能够激发出红色光的第一量子点图案时，可以使得掩膜版的透光部与红色子像素区相对应的像素容纳孔正对，利用曝光设备使得光线通过掩膜版上的透光部照射至与红色子像素区相对应的像素容纳孔处，从而使得位于与红色子像素区相对应的像素容纳孔内的红色量子点的可交联官能团发生交联。
在本公开中，对步骤S10222中曝光工艺所采用的光的波长不做特殊的限定，可以根据可交联配体的具体类型来设定。例如，当可交联配体内的可交联官能团为紫外固化官能团时，可使用紫外线来执行步骤S10222。
在本公开中，对于一个量子点本体所配置的可交联官能团的具体类型以及具体数量不做特殊的限定，可选地，可交联官能团包括以下官能 团中的至少一者：双键、环氧基团、羧基、巯基、氨基、羟基。
图5为本公开实施例中通过光刻工艺分别制备能够激发出红色光、绿色光和蓝色光的三种第一量子图案的一种工艺流程图，如图5所示，以先制备能够激发出红色光的第一量子点图案301，再制备能够激发出绿色光的第一量子点图案302，最后制备能够激发出蓝色光的第一量子点图案303的顺序为例。
制备能够激发出红色光的第一量子点图案301的过程包括：首先形成能够激发出红色光的红色量子点膜31a；然后利用相应掩膜版401来对红色量子点膜31a位于红色子像素区所对应的像素容纳孔内的部分进行曝光处理；最后对完成曝光处理后的红色量子点膜31a进行显影处理，以在红色子像素区所对应的像素容纳孔内制得能够激发出红色光的第一量子点图案301。
制备能够激发出绿色的光第一量子点图案302的过程包括：首先形成能够激发出绿色光的绿色量子点膜32a；然后利用相应掩膜版402来对绿色量子点膜32a位于绿色子像素区所对应的像素容纳孔内的部分进行曝光处理；最后对完成曝光处理后的绿色量子点膜32a进行显影处理，以在绿色子像素区所对应的像素容纳孔内制得能够激发出绿色光的第一量子点图案302。此时，能够激发出红色光的第一量子点图案301表面残留有绿色量子点302a。
制备能够激发出蓝色光的第一量子点图案的过程包括：首先形成能够激发出蓝色光的蓝色量子点膜33a；然后利用相应掩膜版403来对蓝色量子点膜33a位于蓝色子像素区所对应的像素容纳孔内的部分进行曝光处理；最后对完成曝光处理后的蓝色量子点膜33a进行显影处理，以在蓝色子像素区所对应的像素容纳孔内制得能够激发出蓝色光的第一量子点图案303。此时，能够激发出红色光的第一量子点图案301表面残留有绿色量子点302a和蓝色量子点303a，能够激发出绿色光的第一量 子点图案302表面残留有蓝色量子点303a。
图6为本公开实施例中进行荧光性能淬灭处理过程的一种示意图，如图6所示，作为一个可选实施方案，显示面板上划分有红色子像素区、绿色子像素区以及蓝色子像素区，通过步骤S102a以分别在红色子像素区内形成能够激发出红色光的第一量子点图案301、在绿色子像素区内形成能够激发出绿色光的第一量子点图案302、在蓝色子像素区内形成能够激发出蓝色光的第一量子点图案303。
以先制备能够激发出红色光的第一量子点图案301，再制备能够激发出绿色光的第一量子点图案302，最后制备能够激发出蓝色光的第一量子点图案303的顺序为例，此时制得的显示面板如图6中(a)部分所示。通过步骤S102所得到的能够激发出红色光的第一量子点图案301的表面残留有能够激发出绿色光的绿色量子点302a和能够激发出蓝色光的蓝色量子点303a，所得到的能够激发出绿色光的第一量子点图案302的表面残留有能够激发出蓝色光的蓝色量子点303a。
参见图6中(b)部分所示，通过步骤S102b的荧光性能淬灭处理，可使得残留于能够激发出红色光的第一量子点图案301的表面且能够激发出绿色光的绿色量子点302a以及能够激发出蓝色光的蓝色量子点303a，均发生荧光性能淬灭，以形成第二量子点图案5；同时，残留于能够激发出绿色光的第一量子点图案302的表面且能够激发出蓝色光的蓝色量子点303a，也发生荧光性能淬灭，以形成第二量子点图案5。
通过图6可见，红色亚像素区内能够激发出红色光的量子点图形31包括层叠设置的第一量子点图案301和第二量子点图案5，绿色亚像素区内能够激发出绿色光的量子点图形32包括层叠设置的第一量子点图案302和第二量子点图案5，位于蓝色亚像素区域内能够激发出蓝色光的量子点图形33仅包括第一量子图案303且不包括第二量子点图案5。
基于上述内容可见，在本公开实施例中，在步骤S102a结束后，最 后所制备的一种第一量子点图案的上方不存在未进行交联处理的量子点，故在进行步骤S102b处理时，最后所制备的一种第一量子点图案所处像素容纳孔内不会发生量子点本体的荧光性能淬灭；也就是说，在步骤S102b结束后，在步骤S102a最后所制备的一种第一量子点图案上方不会存在第二量子点图案。即，显示面板上仅部分量子点图形存在层叠的第一量子点图案和第二量子点图案，另外一部分量子点图形内仅存在第一量子点图形而不存在第二量子点图案。
图7为本公开实施例中可交联配体发生交联形成网状结构的量子点的示意图，如图7所示，可交联配体交联形成的网状结构位于量子点本体的外表面，可对量子点本体形成包覆。该网状结构可在执行步骤S102b时对量子点本体进行保护，可有效避免第一量子点图案内的量子点本体的荧光性能被淬灭，具体内容可参见后面描述。
在本公开中，对如何执行步骤S102b不做特殊的限定；作为一种可选实施方式，步骤S102b可以具体包括：步骤S102b1。
步骤S102b1、利用具有金属阳离子的处理溶液，对位于第一量子点图案表面且未进行交联处理的量子点内量子点本体进行离子交换处理。
量子点本体具有核壳结构；在未进行阳离子交换处理的量子点本体中，量子点壳的材料以及量子点核的材料均具有阳离子。例如，对于能够激发出红色光的红色量子点CdSe/CdS，该红色量子点的量子点核的材料为CdSe，其中的阳离子为Cd 2+，该红色量子点的的量子点壳的材料为CdS，其中的阳离子也为Cd 2+；如果将量子点核和/或量子点壳中的阳离子Cd 2+置换为其它金属阳离子，那么置换后获得的仍然是核壳结构，但是这种核壳结构已经不具有荧光性能。
需要说明的是，只要量子点本体的量子点核、以及量子点本体的量子点壳中的至少一者发生上述阳离子交换，其荧光性能即被淬灭。换言之，利用具有金属阳离子的溶液对残留于第一量子点图案表面且未进行 交联处理的量子点内量子点本体进行离子交换处理之后，量子点本体的量子点壳的阳离子被相应金属阳离子代替，和/或量子点本体的量子点核的阳离子被相应金属阳离子代替。
图8为使用硝酸银甲醇混合溶液中的银离子使量子点CdSe/CdS荧光性能淬灭的化学反应示意图，如图8所示，量子点核CdSe中的阳离子Cd2+以及量子点壳CdS中的阳离子Cd2+均被Ag+替换后，获得得Ag 2Se/Ag 2S这种不具有荧光性的核壳结构，即量子点材料的荧光性能淬灭。
需要说明的是，在利用具有金属阳离子的处理溶液进行荧光性能淬灭处理过程中，由于残留于第一量子点图案表面的量子点内的未交联的可交联配体无法对量子点本体进行保护，则会使得量子点本体会与处理溶液发生阳离子交换，从而导致量子点本体的荧光性能淬灭；而在第一量子点图案内，由可交联配体通过交联所形成的网状结构能够对量子点本体进行保护，处理溶液中的金属阳离子无法穿透该网状结构，从而可以确保被网状结构包围的量子点本体不会发生阳离子交换，量子点本体的荧光性能淬灭也不会被淬灭。
在一些实施例中，利用具有金属阳离子的处理溶液，对位于第一量子点图案表面且未进行交联处理的量子点内量子点本体进行离子交换处理的步骤包括：将显示面板浸没在具有金属阳离子的处理溶液内，处理溶液内的金属阳离子的浓度为0.05mol/L～0.15mol/L，浸泡时间为5min～15min。在实际应用中，可根据实际需要来对处理溶液内的金属阳离子的浓度以及浸泡时间进行设计和调整。
在显示面板完成浸泡后，通过溶剂对面板的表面进行冲洗，除掉面板表面残留的金属阳离子，然后再进行干燥处理。
在本公开实施例中，对步骤S102b1中所采用的金属阳离子不作限定。在一些实施例中，金属阳离子选自以下阳离子中的至少一者：Fe 3+、 Cu +、Co 2+、Ni 2+、Ag +、Mo 6+、Na +、K +、Cs +、Ba 2+、Ca 2+、Hg 2+、Sn 2+、Pb 2+。
图9为本公开实施例提供的显示面板的另一种制备方法的流程图，如图9所示，该制备方法包括：
步骤S200、提供一衬底基板。
步骤S201、在衬底基板上形成第一电极。
步骤S202、在第一电极远离衬底基板的一侧形成像素界定层，像素界定层上形成有多个像素容纳孔。
步骤S203、依次在对应像素容纳孔内形成各种发光图形的第一量子点图案。
步骤S204、进行荧光性能淬灭处理，以得到各种发光图形的最终结构。
对于步骤S202～步骤S204的具体描述，可参见前面实施例中对步骤S101～步骤S102b的描述，此处不再赘述。
步骤S205、在量子点层远离衬底基板的一侧形成第二电极。
在本公开实施例中，每个第一量子点图案及其所正对的第一电极和第二电极构成一个量子点发光二极管(QLED)；其中，第一电极和第二电极中之一可以为阴极，另一为阳极。此时，所制得的显示面板可以为量子点发光二极管显示面板。
在一些实施例中，阴极可以为面状电极，阳极可以为块状电极，显示面板中的全部量子点发光二极管共用同一阴极，块状电极与第一量子点图案一一对应，不同块状电极之间间隔设置。
在本公开实施例中，显示面板上的量子点发光二极管可以是正置型发光器件，也可以是倒置型发光器件；对于正置型发光器件其阳极较阴极而言更靠近衬底基板(即第一电极为阳极，第二电极为阴极)；倒置型发光器件其阴极较阳极而言更靠近衬底基板(即第一电极为阴极，第二电极为阳极)。无论量子点发光二极管为正置型发光器件，还是为倒 置型发光器件，该量子点发光二极管可以是顶发射型发光器件，也可以是底发射型发光器件。其中，当量子点发光二极管为正置顶发射型发光器件时，阳极为反射电极，阴极为透射电极；当量子点发光二极管为正置底发射型发光器件时，阳极为透射电极，阴极为反射电极；当量子点发光二极管为倒置顶发射型发光器件时，阳极为透射电极，阴极为反射电极；当量子点发光二极管为倒置底发射型发光器件时，阳极为反射电极，阴极为透射电极。
随着发光器件的性能的不断优化，发光器件不仅包含阳极层、阴极层和发光层；还可以在阳极层和发光层之间设置空穴注入层(Hole Injection Layer，简称HIL)、空穴传输层(Hole Transport Layer，简称HTL)、在发光层和阴极层之间设置电子传输层(Electron Transport Layer，简称ETL)。当然，在电子传输层和阴极层之间还可以设置电子注入层(Electron Injection Layer，简称EIL)。
图10为本公开实施例提供的显示面板的又一种制备方法的流程图，如图10所示，以显示面板中的量子点发光二极管为倒置型底发射型发光器件的情况为例，该制备方法包括：
步骤S300、提供一衬底基板。
步骤S301、在衬底基板的一侧形成第一电极。
其中，第一电极作为阴极，第一电极可以为面状电极；第一电极的材料可以为透明导电材料，例如氟掺杂的氧化锡(FTO)、氧化铟锡(ITO)等。
步骤S302、在第一电极远离衬底基板的一侧形成电子传输层。
在本公开实施例中，对于电子传输层的材料不作特殊的限定。例如，可以利用氧化锌(ZnO)来制成电子传输层。当然，本发明并不限于此，在本公开实施例中，电子传输层还可以采用氧化镁锌、氧化铝锌和氧化镁铝锌中的至少一种。
以电子传输层为氧化锌纳米颗粒薄膜为例。可将含有氧化锌纳米颗粒的胶体旋涂于第一电极的表面，之后在80℃～120℃的工艺温度下加热成膜。在旋涂过程中，匀胶机转速可设置为500rpm～2500rpm范围内，以调整膜层的厚度。
以电子传输层为氧化锌且采用溶液法来制备电子传输层为例。首先将1g醋酸锌(或者硝酸锌等)溶于5mL乙醇胺与正丁醇的混合溶液中，形成锌的前驱体溶液；然后通过匀胶机将一定量(90μL～120μL)的锌的前驱体溶液旋涂在第一电极的表面，转速可在2000rpm左右；接着，将产品置于250-300度的热台上进行加热退火，醋酸锌/硝酸锌在高温下分解，形成氧化锌薄膜，即制得电子传输层。
在一些实施例中，在步骤S301和步骤S302之间还包括形成电子注入层的步骤。其中，电子注入层的材料包括但不限于氟化锂、氟化钠、氟化钾、氟化铷、氟化铯、氧化锂、偏硼酸锂中的任意一种。
步骤S303、在电子传输层远离衬底基板的一侧形成像素界定层。
像素界定层上形成有与子像素区一一对应的多个像素容纳孔。其中，像素界定层的材料可以为具有遮光功能或反射功能的材料，以避免不同第一量子点图案之间的出光形成串扰。形成了像素界定层后，可以依次利用水、乙醇和丙酮对形成有像素界定层的衬底基板进行三次清洗，并利用紫外臭氧照射面板10分钟，以去除表面的有机物残余。
步骤S304、依次形成各量子点图形的第一量子点图案。
步骤S305、进行荧光性能淬灭处理。
通过步骤S304和步骤S305可制得量子点层；对于步骤S304和步骤S305的具体描述，可参见前面实施例中对步骤S102a和步骤S102b的相关描述内容，此处不再赘述。
步骤S306、在量子点层远离衬底基板的一侧依次形成空穴传输层和空穴注入层。
其中，空穴注入层的材料包括但不限于聚(3,4-亚乙二氧基噻吩)聚苯乙烯磺酸盐(PEDOT：PSS)、聚噻吩、聚苯胺、聚吡咯、铜酞菁。
空穴传输层的材料包括但不限于p型聚合物材料和各种p型低分子量材料，例如，聚噻吩、聚苯胺、聚吡咯、具有聚-3,4-亚乙基二氧噻吩和聚(对苯乙烯磺酸钠)、4,4’-亚环己基双[N,N-双(4-甲基苯基)苯胺(TAPC)或者4,4’,4”-三(N-咔唑基)三苯胺(TCTA),N,N'-二(1-萘基)-N,N'-二苯基联苯胺(NPB)的混合物。
步骤S307、在第二电极远离衬底基板的一侧形成封装层。
封装层具体可以为封装盖板，可采用紫外固化胶将封装盖板与第二电极进行固定，紫外固化胶也可以起到一定的封装作用。
基于同一发明构思，本公开实施例还提供了一种显示面板，该显示面板可采用上述实施例所提供的制备方法进行制备。下面结合具体附图进行示例性描述。图11a为本公开实施例提供的显示面板的一种截面示意图，如图11a所示，该显示面板包括：衬底基板1、像素界定层2和量子点层3。
其中，像素界定层2包括多个像素容纳孔；量子点层3包括能够发出不同颜色光的至少两种量子点图形31、32、33(附图中示例性画出了能够激发出红色光的量子点图形31、能够激发出绿色光的量子点图形32和能够激发出蓝色光的量子点图形33)，量子点图形31、32、33与像素容纳孔一一对应且位于对应的像素容纳孔内。
其中，部分量子点图形301、302包括层叠的第一量子点图案301、302和第二量子点图案5，第二量子点图案5位于第一量子点图案301、302远离衬底基板1的一侧，第一量子点图案301、302的材料包括具有荧光性能的量子点本体和交联结构，第二量子点图案5的材料包括荧光性能淬灭的量子点本体和未交联的可交联配体。
在一些实施例中，第一量子点图案301、302与对应的第二量子点图 案5直接接触。
在一些实施例中，交联结构为交联的网状结构。
如前文中所述，在完成各种量子点图形31、32、33的第一量子点图案301、302、303制备之后，通过进行荧光性能淬灭处理，以使得位于第一量子点图案301、302、303表面且未进行交联处理的量子点内量子点本体的荧光性能淬灭，形成第二量子点图案5，可以有效改善、甚至彻底消除混色问题，有利于提升显示面板的显示色域。
需要说明的是，附图中所示能够激发出红色光的量子点图形31包括层叠设置的第一量子点图案301和第二量子点图案5，能够激发出绿色光的量子点图形32包括层叠设置的第一量子点图案302和第二量子点图案5，够激发出蓝色光的量子点图形33仅包括第一量子图案且不包括第二量子点图案5，该情况仅起到示例性作用，其不会对本公开的技术方案产生限制。
如前文中所述，可以通过离子交换的方式使得位于第一量子点图案301、302、303表面且未进行交联处理的量子点内量子点本体的荧光性能淬灭，以形成第二量子点图案2。在进行离子交换时，可以置换量子点本体中量子点核内的阳离子，也可以置换量子点本体中量子点壳内的阳离子，还可以同时置换量子点本体中量子点核以及量子点壳内的阳离子。也就是说，在所形成的第二量子点图案5内，量子点本体中量子点核内阳离子与量子点壳内阳离子可以相同，也可以不同。
在一些实施例中，在第二量子点图案5内，荧光性能淬灭的量子点本体中的量子点核的材料和/或荧光性能淬灭的量子点本体中的量子点壳的材料包括以下阳离子中的至少一者：
Fe 3+、Cu +、Co 2+、Ni 2+、Ag +、Mo 6+、Na +、K +、Cs +、Ba 2+、Ca 2+、Hg 2+、Sn 2+、Pb 2+。
在一些实施例中，显示面板包括色转换层和光源50，色转换层为量 子点层3。光源可以发出预设颜色的光，量子点层3中的量子点图形31、32、33能够在预设颜色的光的激发下而产生其他颜色光。其中，光源50可以为OLED、MicroLED等可以发光的器件。
图11b为本公开实施例提供的显示面板的另一种截面示意图，如图11a所示，与图11b中所示采用“光激发”方式来使得量子点图形发光所不同，图11b中采用“电激发”方式来使得量子点图形发光。具体地，显示面板为量子点发光二极管显示面板，显示面板还包括第一电极6和第二电极7；其中，第一电极6位于衬底基板1与量子点层3之间，第二电极7位于量子点层3远离衬底基板1的一侧。第一电极6和第二电极7中之一为阳极，另一为阴极。每个第一量子点图案及其所正对的第一电极和第二电极构成一个量子点发光二极管(QLED)。
图12为本公开实施例提供的显示面板的又一种截面示意图，如图12所示，该显示面板不但包括图12b中的衬底基板1、第一电极6、像素界定层2、量子点层3和第二电极7，还包括：电子传输层8、空穴传输层9和空穴注入层10。
在一些实施例中，第一电极6为阴极，第二电极7为阳极；其中，电子传输层8位于第一电极6与量子点层3之间；空穴传输层9位于量子点层3与第二电极7之间；空穴注入层10位于空穴传输层9与第二电极7之间。
在一些实施例中，第一电极6与电子传输层8之间还设置有电子注入层(未示出)。
对于本实施例中电子传输层8、空穴传输层9和空穴注入层10的具体描述可参见前面实施例中的内容，此处不再赘述。
在一些实施例中，显示装置还可以包括：封装层11，封装层11具体可以为封装盖板；可采用紫外固化胶12将封装盖板与第二电极7进行固定，紫外固化胶12也可以起到一定的封装作用。
基于同一发明构思，本公开实施例还提供了一种显示装置，该显示装置包括显示面板，该显示面板采用前面实施例所提供的显示面板。
本公开实施例提供的显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (18)

  1. 一种显示面板的制备方法，其中，包括：
    提供一衬底基板；
    在所述衬底基板的一侧形成像素界定层，所述像素界定层包括多个像素容纳孔；
    形成量子点层，所述量子点层包括能够发出不同颜色的光的至少两种量子点图形，所述第一量子点图案与所述像素容纳孔一一对应且位于对应的所述像素容纳孔内；
    形成量子点层的步骤包括：依次形成所述至少两种量子点图形的第一量子点图案，其中，形成一种所述量子点图形的第一量子点图案的步骤包括：
    形成能够激发出相应颜色的光的量子点膜，所述量子点膜的材料包括量子点本体和可交联配体；
    对所述量子点膜进行局部交联处理，以使得所述量子点膜上位于相应颜色所对应的像素容纳孔中的可交联配体发生交联；
    对局部交联处理后的量子点膜进行显影处理，以在相应颜色所对应的像素容纳孔中形成所述第一量子点图案；
    在形成依次形成所述至少两种量子点图形的第一量子点图案的步骤之后，还包括：
    进行荧光性能淬灭处理，以使得位于所述第一量子点图案表面且未进行交联处理的量子点内量子点本体的荧光性能淬灭，形成所述至少两种量子点图形，其中，部分所述量子点图形包括层叠的第一量子点图案和第二量子点图案，所述第二量子点图案位于所述第一量子点图案远离所述衬底基板的一侧，所述第一量子点图案的材料包括具有荧光性能的量子点本体和交联结构，所述第二量子点图案的材料包括荧光性能淬灭 的量子点本体和未交联的可交联配体。
  2. 根据权利要求1所述的制备方法，其中，所述进行荧光性能淬灭处理的步骤包括：
    利用具有金属阳离子的处理溶液，对位于所述第一量子点图案表面且未进行交联处理的量子点内量子点本体进行离子交换处理。
  3. 根据权利要求2所述的制备方法，其中，所述利用具有金属阳离子的处理溶液，对位于所述第一量子点图案表面且未进行交联处理的量子点内量子点本体进行离子交换处理的步骤包括：
    将显示面板浸没在具有金属阳离子的处理溶液内，所述处理溶液内的所述金属阳离子的浓度为0.05mol/L～0.15mol/L，浸泡时间为5min～15min。
  4. 根据权利要求2或3所述的制备方法，其中，所述金属阳离子选自以下阳离子中的至少一者：
    Fe 3+、Cu +、Co 2+、Ni 2+、Ag +、Mo 6+、Na +、K +、Cs +、Ba 2+、Ca 2+、Hg 2+、Sn 2+、Pb 2+。
  5. 根据权利要求1至4中任一所述的制备方法，其中，所述可交联配体为可光照交联配体；
    对所述量子点膜进行局部交联处理的步骤包括：
    在所述量子点膜远离所述衬底基板的一侧设置掩膜版，所述掩膜版包括透光部和遮光部，所述掩膜版与相应颜色所对应的像素容纳孔正对；
    利用所述掩膜版对与相应颜色所对应的像素容纳孔进行曝光，以使得所述量子点膜上位于相应颜色所对应的像素容纳孔中的可交联配体发 生交联。
  6. 根据权利要求1至5中任一所述的制备方法，其中，在对所述量子点膜进行局部交联处理的过程中，所述可交联配体交联后在所述量子点本体表面形成交联的网状结构。
  7. 根据权利要求1至6中任一所述的制备方法，其中，在衬底基板的一侧形成像素界定层的步骤之前，还包括：在衬底基板上形成第一电极；
    在形成量子点层的步骤之后，还包括：在量子点层远离衬底基板的一侧形成第二电极。
  8. 根据权利要求7所述的制备方法，其中，所述第一电极为阴极，所述第二电极为阳极；
    在形成第一电极的步骤与形成像素界定层之间还包括：
    在所述第一电极远离衬底基板的一侧形成电子传输层。
  9. 根据权利要求8所述的制备方法，其中，在形成量子点层的步骤与形成第二电极的步骤之间，还包括：
    在量子点层远离衬底基板的一侧依次形成空穴传输层和空穴注入层。
  10. 根据权利要求7至9中任一所述的制备方法，其中，在形成第二电极的步骤之后，还包括：
    在所述第二电极远离衬底基板的一侧形成封装层。
  11. 一种显示面板，包括：
    衬底基板；
    像素界定层，位于所述衬底基板上，所述像素界定层包括多个像素容纳孔；
    量子点层，包括能够发出不同颜色光的至少两种量子点图形，所述量子点图形与所述像素容纳孔一一对应且位于对应的所述像素容纳孔内，其中，部分所述量子点图形包括层叠的第一量子点图案和第二量子点图案，所述第二量子点图案位于所述第一量子点图案远离所述衬底基板的一侧表面，所述第一量子点图案的材料包括具有荧光性能的量子点本体和交联结构，所述第二量子点图案的材料包括荧光性能淬灭的量子点本体和未交联的可交联配体。
  12. 根据权利要求11所述的显示面板，其中，所述第一量子点图案与第二量子点图案直接接触。
  13. 根据权利要求11或12所述的显示面板，其中，所述荧光性能淬灭的量子点本体中的量子点核的材料和/或所述荧光性能淬灭的量子点本体中的量子点壳的材料包括以下阳离子中的至少一者：
    Fe 3+、Cu +、Co 2+、Ni 2+、Ag +、Mo 6+、Na +、K +、Cs +、Ba 2+、Ca 2+、Hg 2+、Sn 2+、Pb 2+。
  14. 根据权利要求11至13中任一所述的显示面板，其中，所述交联结构为交联的网状结构。
  15. 根据权利要求11至14中任一所述的显示面板，其中，所述显示面板为量子点发光二极管显示面板，还包括：
    第一电极，位于所述衬底基板与所述量子点层之间；
    第二电极，位于所述量子点层远离所述衬底基板的一侧。
  16. 根据权利要求15所述的显示面板，其中，所述第一电极为阴极，所述第二电极为阳极；
    所述显示面板还包括：
    电子传输层，位于所述第一电极与所述量子点层之间；
    空穴传输层，位于所述量子点层与所述第二电极之间；
    空穴注入层，位于所述空穴传输层与所述第二电极之间。
  17. 根据权利要求11所述的显示面板，其中，所述显示面板包括色转换层和光源，所述色转换层为所述量子点层。
  18. 一种显示装置，其中，包括：如上述权利要求11至17中任一所述的显示面板。
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