WO2023019915A1

WO2023019915A1 - High heat conduction circuit substrate structure for use in pcb lumped parameter non-reciprocal magnetic device

Info

Publication number: WO2023019915A1
Application number: PCT/CN2022/079421
Authority: WO
Inventors: 杨勤; 胡艺缤; 张华峰; 冯楠轩; 赵春美; 朱家辉
Original assignee: 西南应用磁学研究所
Priority date: 2021-08-17
Filing date: 2022-03-04
Publication date: 2023-02-23
Also published as: KR20230026268A; CN113395826A; CN113395826B

Abstract

A high heat conduction circuit substrate structure for use in a PCB lumped parameter non-reciprocal magnetic device, comprising a double-sided copper clad laminate and a single-sided copper clad laminate bonded together. The double-sided copper clad laminate comprises an upper copper clad layer (5), an intermediate dielectric layer (6), and a lower copper clad layer (7) arranged sequentially from top to bottom; the upper copper clad layer (5) is provided with an upper surface circuit; the upper surface circuit is used for forming a primary installation position (16) for installing a central conductor module (8) and a secondary installation position (17) for installing a matching circuit; the primary installation position (16) is provided with a first heat conduction channel (13), the secondary installation position (17) is provided with a second heat conduction channel (14), and the method used to process the first heat conduction channel (13) depends on the thickness of the intermediate dielectric layer (6); and the lower copper clad layer (7) is thickened, thereby improving the feed-through power tolerance of the device, such that the device can withstand a continuous wave feed-through power of 5-15 W in an environment of 125℃, and the increase in loss of the PCB lumped parameter non-reciprocal magnetic device at a high temperature and high power under low frequency and high power is relatively small, that is, between 0.5 dB and 1.5 dB.

Description

PCB Lumped Parameters High Thermal Conductivity Circuit Substrate Structure for Nonreciprocal Magnetic Devices

technical field

The invention relates to a substrate structure of microwave components, in particular to a circuit substrate structure with high heat conduction for lumped parameter non-reciprocal magnetic devices of PCB boards.

Background technique

The development of the current communication field has expanded to the low-frequency field of 600MHz-803MHz. Low-frequency communication is favored by communication operators in various countries due to its long transmission distance and strong penetrating ability. Miniaturization puts forward higher requirements.

At present, the circuit substrate structure of traditional PCB lumped parameter non-reciprocal magnetic devices consists of double-sided copper clad laminates and single-sided copper clad laminates. The double-sided copper clad laminates are composed of upper surface circuits, intermediate dielectric layers and lower surface circuits; The surface copper clad board is composed of the pin dielectric layer and the pin copper clad layer, and the circuit on the pin lower surface is made on the pin copper clad layer; the substrate is made of double-sided copper clad laminates and single-sided copper clad laminates bonded by epoxy resin . (1) The upper surface circuit is composed of a transmission circuit and a grounding circuit. There is a circular circuit grounding area in the middle of the upper surface circuit, which is the installation position of the central conductor module of the lumped parameter non-reciprocal magnetic device, and this position is the concentrated position of the heat source of the device; ( 2) The intermediate dielectric layer is the heat source transmission channel, insulating layer, signal transmission channel, and ground transmission channel; (3) The lower surface circuit is the ground layer and the signal transmission layer; (4) The pin dielectric layer is the signal transmission channel and the ground transmission channel ; (5) The lower surface circuit of the pin is composed of a transmission circuit and a grounding circuit. The circuit substrate structure realizes the circuit LC matching welding carrier and the circuit transmission function of the lumped parameter non-reciprocal magnetic device.

However, the circuit substrate structure of the traditional PCB lumped parameter non-reciprocal magnetic device mainly has the following defects:

(1) When the lumped parameter non-reciprocal magnetic device uses a traditional circuit substrate, the device has an abnormal increase in the power loss and small signal test loss under normal temperature and high power conditions;

(2) When the lumped parameter non-reciprocal magnetic device uses a traditional circuit substrate, the heat generated by the ferrite inside the device cannot be smoothly exported under the condition of high temperature 125°C continuous wave 10W, and the performance of the device deteriorates and the loss increases abnormally 3- 4dB;

(3) Traditional circuit substrates are easily deformed during product testing due to the thinner underlying copper thickness;

(4) The traditional circuit substrate structure can basically only achieve 5W device passing power in a normal temperature environment;

(5) For devices with traditional circuit substrate structure, the circuit board medium may burn when the continuous wave passes through the power of 10W at a high temperature of 125°C.

Contents of the invention

The purpose of the present invention is to provide a solution to the problem of power dissipation of the current PCB lumped parameter non-reciprocal magnetic device, which changes the heat dissipation path, improves the heat dissipation efficiency, and improves the passing power of this type of lumped parameter non-reciprocal magnetic device. 1. Solving the problem of abnormal increase in loss of lumped parameter non-reciprocal devices under power, a high thermal conductivity circuit substrate structure for lumped parameter non-reciprocal magnetic devices on PCB boards.

In order to achieve the above object, the technical scheme adopted by the present invention is as follows: a PCB board lumped parameter non-reciprocal magnetic device with high thermal conductivity circuit substrate structure, including double-sided copper-clad laminates and single-sided copper-clad laminates arranged sequentially from top to bottom Copper plate, the two are bonded by high thermal conductivity epoxy resin, the double-sided copper clad laminate includes an upper copper clad layer, an intermediate dielectric layer, and a lower copper clad layer arranged in sequence from top to bottom, and the upper copper clad layer is provided with an upper surface A circuit, the lower surface circuit is arranged on the lower copper clad layer;

The upper surface circuit is used to form the main installation position of the central conductor module and the auxiliary installation position of the matching circuit, as well as the grounding channel of the central conductor module circuit and the matching circuit. The main installation position is located in the center of the upper copper layer and It is circular, and the secondary installation positions are distributed around the main installation, which are used to install the circuit components in the matching circuit, and make the circuit components distributed; the intermediate dielectric layer is made of FR-4 material or high-frequency hydrocarbon material The thickness is 0.1mm-0.254mm; the intermediate medium layer has several first heat conduction channels corresponding to the main installation position, and several second heat conduction channels corresponding to the auxiliary installation position, and the first heat conduction channel and the second heat conduction channel are both Penetrating through the upper copper clad layer and the intermediate dielectric layer;

The first heat conduction channel is a through hole that penetrates the upper copper layer and the intermediate dielectric layer, and the through hole is filled with copper or silver, and the second heat conduction channel is a metallization that penetrates the intermediate dielectric layer and the upper copper layer. through hole;

The lower surface of the lower copper clad layer is also provided with an electroplated copper layer, and the lower copper clad layer and the electroplated copper layer form a thick copper layer as a whole, and the circuit on the lower surface is arranged on the thick copper layer.

As a preference: the upper surface of the double-sided copper clad laminate is further provided with a layer of solder resist ink.

Preferably: the thick copper layer has a thickness of 60-80 microns.

Preferably: the TG value of the FR-4 material is 180°C-210°C, the thermal expansion coefficient of the high-frequency hydrocarbon material is less than 45ppm/°C within the range of 30°C-260°C, and the frequency is DC-10GHz. Among them, the FR-4 material with a TG value of 180°C-210°C is a high TG value material.

As a preference: the single-sided copper-clad laminate includes a lead dielectric layer and a lead copper-clad layer in order from top to bottom, and the material of the lead dielectric layer is the same as that of the middle dielectric layer, and the thickness is 0.1mm-0.168mm. Among them, the range of 30-260°C is less than 45ppm/°C for low thermal expansion coefficient, and DC-10GHz is for high frequency.

As a preference: the processing method of the first heat conduction channel is:

When the thickness of the intermediate dielectric layer is 0.1mm-0.127mm, 13-25 through holes of φ0.2mm are opened at the installation position, and the through holes penetrate the upper copper layer and the intermediate dielectric layer, and the holes are filled by electroplating filling the through hole to form a first heat conduction channel;

When the thickness of the intermediate dielectric layer is 0.127mm-0.254mm, 13-25 through holes of φ0.2mm are opened at the installation position, and the through holes penetrate the upper copper layer and the intermediate dielectric layer. The hole is filled, and then the through hole is electroplated to form the first heat conduction channel.

About the central body module: it refers to the various components wrapped by the central conductor in the non-reciprocal magnetic device with lumped parameters of the PCB, including the central conductor, ferrite substrate, and PI insulating film. These components compose the central conductor module and are installed in the lumped parameter non-reciprocal magnetic device of the PCB board, and the input, output and isolation ends of the lumped parameter non-reciprocal magnetic device of the PCB board also need to be set to match The circuit performs impedance matching on the center conductor module.

Compared with the prior art, the present invention has the advantages of:

(1) The distribution method of the upper surface circuit is improved, the circuit components of the matching circuit can be dispersed, and the installation position size of the central conductor module is increased from φ2.1mm to φ2.3mm, which increases the heat dissipation area ;The circular circuit installed in the central conductor module is designed with high thermal conductivity layout, and the thermal conduction hole design of φ0.15-0.2mm is adopted. The hole of this size and diameter is convenient for processing and electroplating hole filling or plugging treatment.

(2) The intermediate dielectric layer is improved and a medium with a thickness of 0.1mm-0.254mm is selected. The intermediate dielectric layer within this range is beneficial to the heat dissipation design and the processing of the heat conduction channel. Secondly, the installation position of the central conductor module is actually the location where the heat source of the device is concentrated, so a heat conduction channel is set on the installation position for targeted heat dissipation. The heat conduction channel is made and processed according to the thickness of the intermediate dielectric layer. High thermal conductivity thermal channels.

(3) The lower copper clad layer corresponding to the lower surface circuit of the double-sided copper clad laminate is designed with a thick copper layer, with a thickness of 60-80 μm, which enhances the copper thickness of the lower surface circuit of the intermediate dielectric layer and enhances the substrate strength of the device. Test It is not easy to deform when used, and has the effect of high heat sink.

To sum up, compared with the traditional circuit substrate structure, the present invention improves the through power tolerance of the device, so that the device can withstand the continuous wave through power of 5W-15W in the environment of 125°C; and realizes the low frequency and high power PCB assembly. The loss increase of the total parameter non-reciprocal magnetic device at high temperature and high power is small, between 0.5dB-1.5dB.

Description of drawings

Fig. 1 is a top view of a circuit substrate for a traditional PCB board lumped parameter non-reciprocal magnetic device;

Fig. 2 is A-A sectional view of Fig. 1;

Figure 3 is a rear view of a double-sided copper clad laminate in a circuit substrate for a traditional PCB lumped parameter non-reciprocal magnetic device;

Fig. 4 is the solder resist ink layer matched with the circuit substrate in Fig. 1;

Fig. 5 is a rear view of a single-sided copper-clad laminate in a circuit substrate for a traditional PCB lumped parameter non-reciprocal magnetic device;

Figure 6 is a perspective view of the layered structure of the present invention;

Fig. 7 is a top view of the solder resist ink layer in Fig. 6;

Fig. 8 is a top view of a double-sided copper clad laminate in the present invention;

Fig. 9 is a B-B sectional view of Fig. 8;

Fig. 10 is a rear view of the double-sided copper clad laminate of the present invention;

Fig. 11 is the structural explosion diagram of the 758-803MHz lumped parameter isolator applying the present invention;

Fig. 12 is the simulation result of standing wave electrical performance at the port of the 758-803MHz lumped parameter isolator applying the present invention;

Fig. 13 is the isolation performance simulation result of applying the 758-803MHz lumped parameter isolator of the present invention;

Fig. 14 is the loss simulation result of the 758-803MHz lumped parameter isolator applying the present invention.

In the figure: 1. Input circuit; 2. Output circuit; 3. Isolation circuit; 4. Ferrite installation position; 5. Upper copper layer; 6. Intermediate dielectric layer; 7. Lower copper layer; 8 , central conductor module; 9, strontium permanent magnetism; 10, solder resist ink layer; 11, pin dielectric layer; 12, pin copper clad layer; 13, first heat conduction channel; 14, second heat conduction channel; 15, High thermal conductivity adhesive layer; 16, the main installation position; 17, the auxiliary installation position; 18, the upper metal shell; 19, the lower metal shell.

Detailed ways

The present invention will be further described below in conjunction with accompanying drawing.

Embodiment 1: See Fig. 1-Fig. 5, which are circuit substrate structures for traditional traditional PCB lumped parameter non-reciprocal magnetic devices.

The traditional circuit substrate structure also includes double-sided copper-clad laminates and single-sided copper-clad laminates arranged in sequence from top to bottom, and the two are bonded into a whole by high thermal conductivity epoxy resin.

From top to bottom, the double-sided copper-clad board includes a solder resist ink layer 10 , an upper copper-clad layer 5 , an intermediate dielectric layer 6 , and a lower copper-clad layer 7 . From top to bottom, the single-sided copper-clad board includes a lead dielectric layer 11 and a lead copper-clad layer 12 .

Upper clad copper layer 5: see Figure 1, used to set the upper surface circuit, the upper surface circuit is used to form the installation position of the circuit element and the grounding channel of the circuit element; the installation position is mainly used to install the central conductor module 8, and the matching The capacitance and resistance of the circuit can be seen in Figure 1. The upper surface circuit includes input circuit 1, output circuit 2, isolation circuit 3, and ferrite installation position 4, input circuit 1, output circuit 2, The isolated circuit 3 is provided with metallized through holes for signal transmission.

The intermediate dielectric layer 6 is generally a solid structure, see FIG. 2 .

Lower copper clad layer 7: used to set the lower surface circuit, which is mainly used to form input and output transmission circuits and ground plane circuits, see FIG. 3 .

Solder resist ink layer 10: used to isolate the non-component mounting area of the upper copper clad layer 5 by solder resist, see Figure 4, in Figure 4, the oblique area is the welding area, and the rest of the white area is the area covered by solder resist ink. The area covered by the solder resist ink varies slightly according to the actual upper surface circuit.

The following issues can be seen from this structure:

(1) The installation position of the central conductor module 8 is actually the concentrated position of the heat source of the device, but neither the upper copper layer 5 nor the corresponding area of the intermediate dielectric layer 6 has a reasonable heat dissipation design.

(2) In the circuit on the upper surface, the installation position of the circuit components is close to the installation position of the central conductor module 8, and the distribution is unreasonable and relatively dense, which is not conducive to heat dissipation.

(3) Using ordinary double-sided copper-clad laminates, the thickness of the copper layer is not enough, resulting in insufficient strength of the substrate, easy deformation, and does not have the effect of high heat sink.

Embodiment 2: Referring to Fig. 6-Fig. 10, a kind of high heat conduction circuit substrate structure for non-reciprocal magnetic device of PCB board lump parameter, comprises double-sided copper-clad board and single-sided copper-clad board arranged in order from top to bottom, both Bonded by high thermal conductivity epoxy resin, the double-sided copper clad laminate includes an upper copper clad layer 5, an intermediate dielectric layer 6, and a lower copper clad layer 7 arranged in sequence from top to bottom, and the upper copper clad layer 5 is provided with an upper surface circuit, the lower surface circuit is arranged on the lower copper clad layer 7;

The upper surface circuit is used to form the main installation position 16 of the center conductor module 8 and the auxiliary installation position 17 of the matching circuit, as well as the grounding channel of the center conductor module 8 circuit and the matching circuit, and the main installation position 16 is located on the upper surface. The center of the copper clad layer 5 is circular, and the secondary installation positions 17 are distributed around the main installation, and are used to install circuit components in the matching circuit, and make the circuit components distributed;

The intermediate dielectric layer 6 is made of FR-4 material or high-frequency hydrocarbon material, with a thickness of 0.1mm-0.254mm; the intermediate dielectric layer 6 is provided with several first heat conduction channels 13 corresponding to the main installation position 16, corresponding to the auxiliary installation Several second heat conduction passages 14 are provided at position 17, and the first heat conduction passage 13 and the second heat conduction passage 14 both penetrate the upper copper clad layer 5 and the intermediate dielectric layer 6;

The first heat conduction channel 13 is a through hole penetrating the upper copper clad layer 5 and the intermediate dielectric layer 6, and the through hole is filled with copper or silver, and the second heat conduction channel 14 is a through hole that penetrates the intermediate dielectric layer 6 and the upper Metallized vias on copper layer 5;

The lower surface of the lower copper clad layer 7 is also provided with an electroplated copper layer, and the lower copper clad layer 7 and the electroplated copper layer form a thick copper layer as a whole, and the circuit on the lower surface is arranged on the thick copper layer.

The upper surface of the double-sided copper clad laminate is also provided with a solder resist ink layer 10 .

The thick copper layer has a thickness of 60-80 microns.

The TG value of the FR-4 material is 180°C-210°C, the thermal expansion coefficient of the high-frequency hydrocarbon material is less than 45ppm/°C within the range of 30°C-260°C, and the frequency is DC-10GHz.

The single-sided copper-clad board includes a lead dielectric layer 11 and a lead copper-clad layer 12 in order from top to bottom. The lead dielectric layer 11 is made of the same material as the intermediate dielectric layer 6 and has a thickness of 0.1mm-0.168mm.

The processing method of the first heat conduction channel 13 is:

When the thickness of the intermediate dielectric layer 6 is 0.1mm-0.127mm, 13-25 through holes of φ0.2mm are opened at the installation position, and the through holes penetrate the upper copper clad layer 5 and the intermediate dielectric layer 6, and are filled with electroplating. Fill the through hole in the form of a hole to form the first heat conduction channel 13;

When the thickness of the intermediate dielectric layer 6 is 0.127mm-0.254mm, 13-25 through holes of φ0.2mm are opened at the installation position, and the through holes penetrate the upper copper clad layer 5 and the intermediate dielectric layer 6. Or fill the hole with silver paste, and then perform electroplating treatment on the through hole to form the first heat conduction channel 13 .

From Figure 6, it can be seen that the composition of the present invention, its multi-layer structure from top to bottom is solder resist ink layer 10, upper copper clad layer 5, intermediate dielectric layer 6, lower copper clad layer 7, high thermal conductivity adhesive Layer 15, pin dielectric layer 11, pin copper clad layer 12. The first to fourth layers are double-sided copper-clad laminates, the fifth layer is made of glue, and the sixth to seventh layers are single-sided copper-clad laminates. Specifically:

The first layer is the solder resist ink layer 10 , referring to FIG. 7 , the hatched area is the welding area, and the remaining white areas are the areas covered by the solder resist ink. The area covered by the solder resist ink varies slightly according to the actual upper surface circuit.

The second layer is the upper copper clad layer 5, referring to Fig. 8, the upper surface circuit is arranged on this layer, the purpose is to form the main installation position 16 for installing the center conductor module 8 and the auxiliary installation position 17 for the matching circuit, and the center conductor module The grounding channel of the 8 circuit and the matching circuit can be designed according to actual needs. Figure 8 shows a specific design method. The main installation position 16 is located in the center as a circle, which is used to install the central conductor module 8 circuits, and the auxiliary installation position 17 includes several parts, namely:

The irregular circuit block in the upper left corner of the main installation position 16 is the signal input terminal of the product of the present invention. The small white circle in this area is a metallized through hole for signal input. In this area, an input terminal is provided to connect the central conductor module 8 The transmission line welding area and the input matching capacitor welding area, C1 in the figure is the input matching capacitor;

The irregular circuit block in the upper right corner of the main installation position 16 is the signal output terminal of the product of the present invention. The small white circle in this area is a metallized through hole for signal output. In this area, an output terminal is provided to connect the central conductor module 8 The transmission line welding area and the output matching capacitor welding area, C2 in the figure is the output matching capacitor;

The strip-shaped area between the signal input terminal and the signal output terminal is the common ground installation position for the input and output circuit components, and the circular hole on it is the second heat conduction channel 14;

The rectangular area on the left side of the main installation position 16 is the grounding circuit of the input matching capacitor C1, and the small white circle on it is the grounding metallization through hole;

The rectangular area on the right side of the main installation position 16 is the grounding circuit of the matching capacitor C2 at the output end, and the small white circle on it is the grounding metallization through hole;

The arc-shaped circuit block below the main installation position 16 is the welding area of the transmission line at the isolation end of the central conductor module 8 and the matching capacitance and resistance welding area of the isolation end. In the figure, C3 is the isolation end matching capacitor, and R is the isolation end matching resistance;

The lowermost area of the main installation position 16 is the grounding circuit and the resistance grounding circuit of the isolation terminal matching capacitor C3, and the small white circle on it is the grounding metallization through hole.

In Figure 8, the marked C1, C2, C3, and R all refer to the installation positions of the capacitors and resistors. From Figure 8, it can be seen that the matching capacitors at the input end, the matching capacitors at the output end, and the matching capacitors at the isolation end are scattered and distributed, and are set separately The grounding circuit of the capacitor is also dispersedly distributed. This distribution method increases the space of the main installation position 16 and is beneficial to the heat dissipation of the central conductor module 8 .

In addition, it can be seen from FIG. 8 that the first heat conduction channel 13 and the second heat conduction channel 14 are arranged. The first heat conduction channel 13 is located in the area of the central conductor module 8, and the high density is concentrated in the main installation position 16, which is more targeted. The heat dissipation of the first heat conduction channel 13 is different according to the thickness of the intermediate dielectric layer 6 , and the manufacturing and processing methods are different, finally forming a heat conduction channel with high thermal conductivity. Effective heat dissipation of the central conductor module 8 is ensured. The second heat conduction channel 14 is distributed at the sub-installation position 17 for heat dissipation of the matching circuit.

The third layer is the intermediate dielectric layer 6 . As can be seen in FIG. 9 , there are mainly first heat conduction channels 13 and second heat conduction channels 14 running through the upper copper clad layer 5 and the intermediate dielectric layer 6 . In addition, according to the difference of the intermediate dielectric layer 6 , different processing techniques for the first heat conduction channel 13 are selected.

The fourth layer is the lower copper clad layer 7, and the lower surface circuit is arranged on this layer. The traditional lower copper clad layer 7 is a single-layer copper film, and its thickness and strength are not enough. The present invention adds an electroplated copper layer to increase the lower copper clad layer. The thickness of 7 has enhanced the intensity of product of the present invention. The lower surface circuit is an input and output transmission circuit and a ground plane circuit.

The fifth layer is the high thermal conductivity adhesive layer 15 , since the double-sided copper-clad laminate and the single-sided copper-clad laminate are bonded by high thermal conductivity epoxy resin, when the high thermal conductivity epoxy resin is cured, the high thermal conductivity adhesive layer 15 is formed.

The sixth layer is the pin dielectric layer 11, which uses FR-4 with a TG value of 180-210°C or high-frequency hydrocarbon materials with a low thermal expansion coefficient. The low thermal expansion coefficient means that the range of 30-260°C is less than 45ppm/°C. High frequency refers to the frequency range of DC-10GHz. The thickness of the dielectric layer is 0.1mm-0.168mm.

The seventh layer is the pin copper clad layer 12 , on which the circuit on the lower surface of the pin is arranged, and the circuit on the lower surface of the pin constitutes a grounding pin and a signal transmission pin.

The manufacture technological process of product of the present invention is as follows:

(1) The copper clad layer on one side of the double-sided copper clad laminate is electroplated with thick copper to form a thick copper layer, and then the lower surface circuit pattern is made on the thick copper layer;

(2) On the double-sided copper clad laminate, a through hole is opened at the main installation position 16, and according to the thickness of the intermediate dielectric layer 6, the corresponding processing method is selected for filling to form the first heat conduction channel 13; the through hole only runs through the double-sided copper clad laminate The upper clad copper layer 5 and the intermediate dielectric layer 6;

(3) Bonding of single-sided copper-clad laminates and double-sided copper-clad laminates;

(4) The upper surface circuit metallization via hole is drilled, drilled to the thick copper layer of the lower surface circuit, and then the blind hole is metallized;

(5) There are 5 places on the upper copper clad layer, the upper surface circuit pattern is made, and the pin circuit pattern is made;

(6) Grooving of single-sided copper-clad laminates is mainly to open the middle card slot, which is used for assembly and welding of the lower metal shell 19, and is slotted to the thick copper layer of the lower surface circuit of the double-sided copper-clad laminate;

(7) Substrate gold treatment;

(8) The upper surface circuit is coated with solder resist ink to form a solder resist ink layer 10;

(9) The substrate is slit to the required dimensions;

(10) On-off detection of the substrate.

Embodiment 3: see Fig. 11-Fig. 14; use the substrate mechanism and processing method of the present invention to manufacture a 758-803MHz lumped parameter isolator. , Strontium permanent magnetism 9, the circuit substrate structure of the present invention, the lower metal shell 19, the central conductor module, and the capacitive resistance element are installed on the circuit substrate structure. And the electrical performance simulation of this product is carried out, and the simulation results are shown in Figure 12, Figure 13, and Figure 14. The three figures are port standing wave electrical performance, isolation performance simulation and loss simulation. The simulation results show that the standing waves S11 and S22 of the device in the 758-803MHz band are both below -14dB, the loss S21 is 0.44-0.71dB, and the isolation at S12 is below -17dB. The measured data of the device shows that the port standing wave S11 and S22 are at worst in the band -14dB, the loss S21 is 0.95-1dB, and the isolation S12 is below -10dB, which is equivalent to the electrical performance index of the device made by the traditional circuit substrate.

However, the present invention mainly solves the problems of abnormally increased loss and circuit substrates not being able to withstand power when the device is subjected to power testing at high temperature.

Devices made of traditional circuit substrates experience an abnormal increase in device loss when passing through a 10W continuous wave at room temperature, which is 1-2dB higher than the loss under small signals. In an environment of 125°C, the device passes through a 10W continuous wave, and the device is burnt; when the device is transferred to a 125°C environment through a 10W continuous wave at normal temperature, there is a loss jump, and the output power and input power are changed from 2-3dB The difference jumps to 3-4dB. Since the device passes continuous wave power of 10W at 125°C for a long period of time in the actual use environment, the loss of traditional PCB board devices increases abnormally under high temperature and high power, which cannot meet the use requirements.

The device of the invention can withstand higher continuous wave passing power at 125°C, meets the use requirements of the device, and can increase the withstand power of the device. The specific results are as follows:

When 13 first heat conduction channels 13 are set at the main installation position 16 of the device, the loss under power when the device passes through 10W continuous wave at room temperature is 0.5-0.6dB higher than the loss under signal; The power loss under continuous wave is 0.3-0.5dB higher than the power loss under normal temperature environment; there is no sudden jump in loss when the device power is transferred from normal temperature environment to high temperature environment; the device can withstand 10W at 125°C for a long time continuous wave power, the circuit board does not burn.

When 25 first heat conduction channels 13 are set at the main installation position 16 of the device, the device can withstand a continuous wave passing power of 15W at 125°C, which increases the loss by 1-1.5dB compared with the small signal at normal temperature; and the circuit substrate has no Burnt condition.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. within range.

Claims

A high thermal conductivity circuit substrate structure for PCB lumped parameter non-reciprocal magnetic devices, including double-sided copper-clad laminates and single-sided copper-clad laminates arranged sequentially from top to bottom, the two are bonded by high thermal conductivity epoxy resin, so that The double-sided copper clad laminate includes an upper copper clad layer, an intermediate dielectric layer, and a lower copper clad layer arranged sequentially from top to bottom. The upper copper clad layer is provided with an upper surface circuit, and the lower copper clad layer is provided with a lower surface circuit. in:

The upper surface circuit is used to form the main installation position of the central conductor module and the auxiliary installation position of the matching circuit, as well as the grounding channel of the central conductor module circuit and the matching circuit. The main installation position is located in the center of the upper copper layer and It is circular, and the auxiliary installation positions are distributed around the main installation, and are used to install circuit components in the matching circuit, and make the circuit components scattered;

The intermediate dielectric layer is made of FR-4 material or high-frequency hydrocarbon material, with a thickness of 0.1mm-0.254mm; the intermediate dielectric layer is provided with several first heat conduction channels corresponding to the main installation position, and several first heat conduction channels are provided at the corresponding auxiliary installation position. A second heat conduction channel, and the first heat conduction channel and the second heat conduction channel both penetrate the upper copper clad layer and the intermediate dielectric layer;

The first heat conduction channel is a through hole that penetrates the upper copper layer and the intermediate dielectric layer, and the through hole is filled with copper or silver, and the second heat conduction channel is a metallization that penetrates the intermediate dielectric layer and the upper copper layer. through hole;

The lower surface of the lower copper clad layer is also provided with an electroplated copper layer, and the lower copper clad layer and the electroplated copper layer form a thick copper layer as a whole, and the circuit on the lower surface is arranged on the thick copper layer.
The high thermal conductivity circuit substrate structure for PCB lumped parameter non-reciprocal magnetic devices according to claim 1, characterized in that: the upper surface of the double-sided copper clad board is also provided with a solder resist ink layer.
The high thermal conductivity circuit substrate structure for PCB lumped parameter non-reciprocal magnetic devices according to claim 1, characterized in that: the thickness of the thick copper layer is 60-80 microns.
The high thermal conductivity circuit substrate structure for PCB lumped parameter non-reciprocal magnetic devices according to claim 1, characterized in that: the TG value of the FR-4 material is 180°C-210°C, and the high-frequency hydrocarbon The thermal expansion coefficient of the material is less than 45ppm/°C in the range of 30°C-260°C, and the frequency is DC-10GHz.
According to claim 1 or 4, the PCB board lumped parameter non-reciprocal magnetic device with high thermal conductivity circuit substrate structure is characterized in that: the single-sided copper-clad laminate includes pin dielectric layers and pins in sequence from top to bottom For the copper clad layer, the material of the lead dielectric layer is the same as that of the intermediate dielectric layer, and the thickness is 0.1mm-0.168mm.
According to claim 1, the PCB board lumped parameter non-reciprocal magnetic device with high thermal conductivity circuit substrate structure is characterized in that: the processing method of the first heat conduction channel is:

When the thickness of the intermediate dielectric layer is 0.1mm-0.127mm, 13-25 through holes of φ0.2mm are opened at the installation position, and the through holes penetrate the upper copper layer and the intermediate dielectric layer, and the holes are filled by electroplating filling the through hole to form a first heat conduction channel;

When the thickness of the intermediate dielectric layer is 0.127mm-0.254mm, 13-25 through holes of φ0.2mm are opened at the installation position, and the through holes penetrate the upper copper layer and the intermediate dielectric layer. The hole is filled, and then the through hole is electroplated to form the first heat conduction channel.