WO2023015719A1 - Structure de couche de film d'écran d'affichage, terminal mobile et procédé de fabrication de structure de couche de film - Google Patents

Structure de couche de film d'écran d'affichage, terminal mobile et procédé de fabrication de structure de couche de film Download PDF

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WO2023015719A1
WO2023015719A1 PCT/CN2021/124600 CN2021124600W WO2023015719A1 WO 2023015719 A1 WO2023015719 A1 WO 2023015719A1 CN 2021124600 W CN2021124600 W CN 2021124600W WO 2023015719 A1 WO2023015719 A1 WO 2023015719A1
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film
layer
color
film layer
layer structure
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PCT/CN2021/124600
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English (en)
Chinese (zh)
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程立技
赵允国
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惠州Tcl云创科技有限公司
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Publication of WO2023015719A1 publication Critical patent/WO2023015719A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2479/00—Presence of polyamine or polyimide
    • C09J2479/08—Presence of polyamine or polyimide polyimide
    • C09J2479/086—Presence of polyamine or polyimide polyimide in the substrate

Definitions

  • the present disclosure relates to the field of film layer manufacturing of display screens, in particular to a film layer structure of a display screen, a mobile terminal and a method for manufacturing the film layer structure.
  • COE technology a technology to reduce the thickness of the polarizer, that is, to use a combined film layer formed by Color film (color film) and BM (color resistance) to replace the polarizer.
  • This COE technology uses the combined film layer of Color film (color film) and BM (color resistance) to replace the existing polarizer.
  • the combined film layer is used as the packaging film and Between the touch layer, that is, the combined film layer is placed outside the packaging film, and the thickness of the combined film layer is only 5um, which is much smaller than the thickness of the original polarizer, which is in line with the trend of thinner and lighter mobile phones, and this combination
  • the film layers are all organic materials, which can greatly enhance its application in folding mobile phones.
  • the mobile phone film structure manufactured by COE technology has a good effect on the thinning of the mobile phone
  • the existing COE film structure of the mobile phone hinders the light-emitting angle range of the light-emitting device inside the mobile phone, thereby increasing the thickness of the mobile phone film.
  • the existing film layer structure hinders the light output angle range.
  • the present disclosure provides a film structure of a display screen, a mobile terminal and a manufacturing method of the film structure, which solves the problem that the existing film structure hinders the range of light emission angles.
  • the present disclosure provides a film layer structure of a display screen, wherein the film layer structure includes a combined film layer composed of a color film and a color-resisting material, and a silicon nitride oxide layer, an organic encapsulation layer, and a silicon nitride layer.
  • the encapsulation film constituted is characterized in that: the combined film layer is located inside the encapsulation film; the silicon oxynitride layer, the organic encapsulation layer and the silicon nitride layer are along the inner side of the film layer structure to The outer side is arranged in sequence, the combined film layer is located between the silicon oxynitride layer and the organic encapsulation layer, and the inner side of the film layer structure is close to the light source inside the display screen;
  • the film layer structure of the display screen also includes a substrate, an array on the substrate, a flat layer on the array, a touch layer on the packaging film, and an adhesive glue on the touch layer material layer;
  • the film layer structure of the display screen also includes a color-resisting film formed by coating a color-resisting material on the silicon nitride layer, and the color-resisting film is transparent silicon oxide, silicon nitride, indium tin oxide, indium gallium zinc oxide or indium zinc oxide and the thickness of the color resist film is 0.70 micron to 1.40 micron
  • the present disclosure provides a display film layer structure, wherein the film layer structure includes a combined film layer composed of a color film and a color-resisting material, and a silicon nitride oxide layer, an organic packaging layer, and a silicon nitride layer.
  • An encapsulating film, the combined film layer is located inside the encapsulating film.
  • the silicon oxynitride layer, the organic encapsulation layer and the silicon nitride layer are sequentially arranged from the inner side to the outer side of the film layer structure, and the combined film layer is located on the silicon oxynitride layer.
  • layer and the organic encapsulation layer, the inner side of the film layer structure is close to the light source inside the display screen.
  • the silicon oxynitride layer, the organic encapsulation layer and the silicon nitride layer are sequentially arranged from the inside to the outside of the film layer structure, and the combined film layer is located on the organic encapsulation layer Between the silicon nitride layer and the silicon nitride layer, the inner side of the film layer structure is close to the light source inside the display screen.
  • the film layer structure of the display screen further includes a color-resist film formed by coating a color-resist material on the silicon nitride layer.
  • the color resist film is transparent silicon oxide, silicon nitride, indium tin oxide, indium gallium zinc oxide or indium zinc oxide.
  • the color resist film has a thickness of 0.70 microns to 1.40 microns.
  • the display film layer structure further includes a substrate, an array on the substrate, a flat layer on the array, a touch layer on the packaging film, and a touch layer on the touch An adhesive glue layer on the control layer, wherein the silicon oxynitride layer is close to the planar layer, and the silicon nitride layer is close to the touch control layer.
  • the flat layer is filled with the color films, and the color films include red films, green films and blue films.
  • the red film, the green film and the blue film are sequentially arranged on the flat layer, and spaces are provided between adjacent films.
  • the position of the color-resist film corresponding to the planar layer is filled with red film, green film and blue film in sequence.
  • a buffer layer of 0.1 micron to 0.3 micron is provided between the organic encapsulation layer and the combined film layer.
  • the embodiment of the present disclosure also provides a mobile terminal, including a display film layer structure, characterized in that the display screen film layer structure includes a composite film layer composed of a color film and a color-resisting material, and a composite film layer made of nitrogen oxide An encapsulation film composed of a silicon layer, an organic encapsulation layer and a silicon nitride layer, the combined film layer being located inside the encapsulation film
  • the embodiment of the present disclosure also provides a method for manufacturing a film structure, which includes:
  • a silicon nitride layer in the encapsulation film is fabricated on the organic encapsulation layer.
  • the manufacturing of the silicon oxynitride layer in the packaging film includes:
  • the silicon oxynitride layer is formed by a plasma-enhanced chemical vapor deposition method, and the deposition temperature of the plasma-enhanced chemical vapor deposition method is 45° C. to 55° C.
  • the manufacturing the combined film layer on the silicon oxynitride layer includes:
  • the color film in the combined film layer is coated at the gap on the color resist film after the exposure, development and baking processes.
  • the exposure, development and baking processes are sequentially performed on the color-resist film after opening the notch, including:
  • the exposure, development and baking processes are sequentially performed, and the through holes of the mask plate are aligned with non-notch positions on the color resist film.
  • the color films include red films, green films, and blue films, and each of the gaps on the color-resisting film corresponds to the red film, the green film, and the blue film One of three films.
  • the manufacturing the organic encapsulation layer in the encapsulation film on the combined film layer includes:
  • the organic encapsulation layer is fabricated on the combined film layer by using an inkjet printing process.
  • the exposure time is 4 seconds to 6 seconds.
  • the film layer structure composed of combined film layer and packaging film will reduce the light output range of the display screen, and the light output range is the light The range of viewing angles covered.
  • the combined film layer composed of color film and color-resisting material is arranged inside the packaging film, which can increase the light emitting range of the film layer structure of the display screen, and increasing the light emitting range can reduce the attenuation degree of the film layer structure to the brightness, thereby The brightness of the display screen is improved, thereby reducing the degree of color shift caused by the diminution of brightness, and finally improving the user's experience of the display screen.
  • Fig. 1 is the schematic diagram of the film layer structure of the present disclosure
  • FIG. 2 is a schematic diagram of a comparison of light exit angles between the film layer structure of the present disclosure and the existing film layer structure.
  • COE technology a technology to reduce the thickness of the polarizer, which is to use the combined film layer formed by Color film (color film 5) and BM (color resist film 6). Replaces polarizers.
  • This COE technology uses the combined film layer of Color film (color film 5) and BM (color resist film 6) to replace the existing polarizer.
  • the combined film layer is made in the film structure of the mobile phone
  • the packaging film 4 and the touch layer 7 that is, the combined film layer is placed outside the packaging film 4
  • the thickness of the combined film layer is only 5um, which is much smaller than the thickness of the original polarizer, which is well in line with the mobile phone.
  • the trend of light and thin, and this combination of film layers are all organic materials, can greatly enhance its application in folding mobile phones.
  • the mobile phone film structure manufactured by COE technology has a good effect on the thinning of the mobile phone
  • the existing COE film structure of the mobile phone hinders the range of light emission angles of the light-emitting devices inside the mobile phone, thereby increasing the thickness of the mobile phone film.
  • the degree to which a structure attenuates the brightness produced by a light-emitting device.
  • the existing film structure hinders the light output angle range.
  • the present disclosure provides a film structure of a display screen, a mobile terminal and a manufacturing method of the film structure, which solves the problem that the existing film structure hinders the range of light emission angles.
  • the film layer structure includes a combined film layer composed of the color film 5 and the color resist film 6 and the packaging film 4 , and the combined film layer is located inside the packaging film 4 . No matter the combined film layer made of the color film 5 and the color resist film 6 is arranged on the outside or the inside of the packaging film 4, the film layer structure composed of the combined film layer and the packaging film 4 will reduce the light emission range of the display screen. That is, the viewing angle range covered by the light.
  • the combined film layer composed of the color film 5 and the color-resisting film 6 is arranged inside the packaging film 4, which can increase the light emitting range of the film layer structure of the display screen, and the increase of the light emitting range can reduce the effect of the film layer structure on the brightness.
  • the degree of attenuation improves the brightness of the display screen, thereby reducing the degree of color shift caused by the decrease in brightness, and finally improving the user's experience of the display screen.
  • the disclosure provides a film layer structure of a display screen. As shown in FIG. The inside of the encapsulation film 4 .
  • the film layer structure also includes a substrate 1, an array 2 layer on the substrate 1, a flat layer 3 on the array 2 layer, a touch layer 7 on the packaging film 4, and an adhesive glue on the touch layer 7 material layer.
  • the color film 5 is represented by Color film
  • the color resist film 6 material is represented by BM
  • the packaging film 4 is represented by TFE
  • the substrate 1 is PI substrate 1
  • the array layer 2 is represented by Array
  • the flat layer 3 is represented by PDL
  • the touch layer 7 It is expressed by Touch
  • the adhesive layer is expressed by OCA
  • the encapsulation film 4 includes a silicon oxynitride layer 41 (SiON), an organic encapsulation layer 42 (IJP) and a silicon nitride layer 43 (SiN) arranged sequentially from the inside to the outside of the film layer structure, wherein the silicon oxynitride layer 41 ( SiON) is close to the flat layer 3, the silicon nitride layer 43 (SiN) is close to the touch layer 7, and the organic packaging layer 42 (IJP) is located between the silicon oxynitride layer 41 (SiON) and the silicon nitride layer 43 (SiN).
  • the inner side to the outer side of the film layer structure are arranged along the thickness direction of the film layer structure.
  • the flat layer 3 (PDL) is filled with color film 5, the color film 5 includes red film (R), green film (G) and blue film (B), red film (R), green film (G) and blue film Films (B) are arranged sequentially on the flat layer 3 with spaces between adjacent films.
  • the position corresponding to the flat layer 3 on the color resist film 6 is also filled with red film (R), green film (G) and blue film (B) in sequence.
  • the combined film layer of this embodiment can be located between the silicon oxynitride layer 41 (SiON) and the organic encapsulation layer 42 (IJP), or between the organic encapsulation layer 42 (IJP) and the silicon nitride layer 43 (SiN).
  • the light output range corresponding to the film layer structure of the display screen is larger than that of the combined film layer located between the organic encapsulation layer 42 (IJP) and the nitrided film layer.
  • the combined film layer is located between the organic packaging layer 42 (IJP) and the silicon nitride layer 43 (SiN) than is located between the silicon oxynitride layer 41 (SiON) and the organic encapsulation layer 42 (IJP) should be convenient for fabrication.
  • the light output range is larger, and the following experiment was carried out:
  • the RGB light-emitting device has a larger light output range. Therefore, compared with placing the combined film layer For other positions, the combined film layer is placed between the silicon oxynitride layer 41 (SiON) and the organic encapsulation layer 42 (IJP) in the encapsulation film 4 to keep more light output at a larger viewing angle, so as to achieve a large A certain degree of improvement in brightness attenuation under the viewing angle can also reduce the impact of color cast.
  • the film layer structure of the display screen in this embodiment can be applied to a mobile terminal, and the mobile terminal can be a mobile phone or a tablet.
  • the disclosure provides a method for manufacturing a film layer structure.
  • the manufacturing method of the film layer structure specifically includes the following steps:
  • the RGB films represent red (R), green (G) and blue (B) emitting devices, respectively.
  • the environmental vacuum of evaporation is 3Pa-8Pa, and the environmental vacuum is controlled between 3Pa-8Pa. During this time, air can be prevented from being mixed in the manufactured RGB three-color film, thereby improving the quality of the subsequent display screen.
  • the silicon oxynitride layer 41 is formed by a plasma enhanced chemical vapor deposition method (PECVD process), and the deposition temperature of the plasma enhanced chemical vapor deposition method (PECVD process) is 45°C-55°C.
  • PECVD process plasma enhanced chemical vapor deposition method
  • the combined film layer is composed of red film (R), green film (G) and blue film (B) three color films 5 and color resist film 6 (BM).
  • the red film (R), green film (G) and blue film (B) convert the passing white light into red, green and blue (referred to as R, G, B) three primary color beams, and cooperate with other components such as liquid crystal layers to achieve display
  • R, G, B three primary color beams
  • other components such as liquid crystal layers
  • Step S400 includes steps S401, S402, S403, S404:
  • the color resist film 6 can be transparent silicon oxide, silicon nitride, indium tin oxide, indium gallium zinc oxide or indium zinc oxide.
  • the color resist film 6 in this embodiment has a thickness of 0.70 microns to 1.40 microns.
  • a notch is formed on the color-resist film 6 by an etching process.
  • the position of the notch in this embodiment is the same as that of the red light (R) device, the green light (G) device and the blue (G) device on the flat layer 3.
  • B) corresponds to the device.
  • the exposure, development and baking processes are sequentially performed, and the through holes of the mask plate are aligned with the non-notched areas on the color resist film 6. location. For example, there are three parts without openings on the mask plate (Mask), and these three parts are aligned with the gaps on the color-resist film 6. The purpose of doing this is to cover the gaps on the color-resist film 6 to prevent exposure and development.
  • These processes of baking and baking affect the exposed silicon oxynitride layer 41 and protect the silicon oxynitride layer 41 .
  • the parts of the color resist film 6 that need to be exposed, developed and baked are directly exposed, which facilitates the exposure, developed and baked processes.
  • an exposure machine is used for pattern exposure, and NaOH is used to develop the desired pattern.
  • the color film 5 includes a red film, a green film and a blue film, and each of the gaps on the color-resisting film 6 corresponds to one of the three films of the red film, the green film and the blue film. A sort of.
  • the process of making the color-resist film 6 (BM) adopt a spin coater in nitrogen
  • the surface of the silicon oxide layer 41 is evenly spin-coated with a black resin film, and then the excess black resin film is removed by vacuum drying and baking equipment, and then exposed and developed to form color-resist films 6 (BM) arranged at intervals, and finally the residual black resin film is removed by curing equipment.
  • the color resist film 6 (BM) is cured on the silicon nitride oxide layer 41; the silicon nitride oxide layer 41 and the color resist film 6 (BM) are not set Reflective films, i.e. red film (R), green film (G), blue film (B), wherein the reflective film on the silicon oxynitride layer 41 without color resist film 6 (BM) is provided with openings, the The opening is connected to the silicon oxynitride layer 41, and a reflective film is formed by sputtering on the silicon oxynitride layer 41 with color-resist films 6 (BM) arranged at intervals, followed by cleaning, coating of positive photoresist, Baking, exposure and development, etching, stripping process, making the reflective film of the required pattern with the opening connected to the silicon oxynitride layer 41; then making a color filter film on the reflective film with the opening: using a spin coater to make the opening with the opening A primary color negative photoresist is evenly spin-coated
  • Color filter film Coating insulating OC film on the color filter film: using a spin coater to uniformly spin-coat an acrylic resin film on the transparent substrate 1 for making the colored resist film 6 (BM), reflective film, and color filter film, and then use Baking and curing equipment forms an insulating OC film on the surface of the color filter film; sputtering ITO conductive film on the surface of the insulating OC film: use vacuum sputtering equipment to sputter ITO conductive film on the surface of the insulating OC film.
  • step S400 may also be replaced by the following steps:
  • a mask plate (Mask) containing a special substance is formed on the silicon oxynitride layer 41, wherein the special substance can emit light passing through the color resist film 6 (BM) after being excited; the mask plate (Mask) is etched Form the Mask pattern; coat the color resist film 6 photoresist layer on the Mask pattern; excite the Mask pattern to emit light passing through the color resist film 6 (BM), so that the exposure machine and the Mask pattern are aligned; the color is adjusted by the exposure machine The photoresist layer of the resist film 6 is exposed and developed to form a BM pattern.
  • a mask plate (Mask) containing a special substance is first formed on the silicon oxynitride layer 41, wherein the special substance is excited. Able to emit light passing through the color resist film 6 (BM); etch the mask plate (Mask) to form a Mask pattern; coat the color resist film 6 photoresist layer on the Mask pattern; excite the Mask pattern to emit through the color The light of the blocking film 6 (BM) makes the exposure machine align with the Mask pattern; the BM photoresist layer is exposed and developed by the exposure machine to form the BM pattern.
  • BM blocking film 6
  • the exposure machine can accurately complete the alignment of the mask to ensure Subsequent BM pattern etching can be accurately completed.
  • the MARK layer containing a special substance is formed on the silicon oxynitride layer 41
  • the special substance that can emit light through the BM layer after being excited can be rare earth metal ions erbium, quantum dot nanoparticles and the like.
  • the color of light that the BM layer cannot absorb is also different. For example, if BM is made of acrylic resin with carbon black or titanium black added, the visible light transmittance of this material is less than 1%, and infrared light with a wavelength in the range of 800-1600nm can pass through this material. Material.
  • the fabrication of the organic encapsulation layer 42 is also carried out in a vacuum environment, and the vacuum degree of the vacuum environment in which the organic encapsulation layer 42 is produced should be the same as the vacuum degree of the vacuum environment in which the silicon oxynitride layer 41 (inorganic layer) is produced.
  • the vacuum degree of the vacuum environment in which the organic encapsulation layer 42 is produced should be the same as the vacuum degree of the vacuum environment in which the silicon oxynitride layer 41 (inorganic layer) is produced.
  • a buffer organic layer can also be made between the machine packaging layer and the combined film layer, and the buffer organic layer is deposited by PECVD.
  • the thickness range of the buffer layer is: 0.1 micron to 0.3 micron; the deposition time of the buffer organic layer needs to be Less than the deposition time of the organic encapsulation layer 42, thereby helping to reduce the difference between the organic encapsulation layer 42 and the silicon oxynitride layer 41 (inorganic layer) interface;
  • the organic layer is more conducive to mask cleaning than depositing the organic encapsulation layer 42;
  • the deposition of the buffer organic layer adopts chemical vapor deposition PECVD; the deposition of the buffer organic layer and the silicon oxynitride layer 41 (inorganic layer) can be in the same process chamber, and a process flow can be used, which can reduce the transmission of the substrate 1.
  • the alignment time is continuous, the process is continuous, and the intermediate interface has no bad defects, and a better film can be obtained.
  • the material of the buffer organic layer is preferably plasma polymerized pp-hexamethyldisiloxane HMDSO; it can be passed into plasma (for example, oxygen-containing plasma, fluorine-containing plasma) to cure the buffer organic layer to realize the buffer organic layer Accurate and timely control of surface characteristics; this treatment process can be completed in a PECVD chamber, or in a pre-treatment chamber for the organic encapsulation layer 42 process; considering the time interval between the organic encapsulation layer 42 and the buffer organic layer process, and Contact angle properties can change over time.
  • plasma for example, oxygen-containing plasma, fluorine-containing plasma
  • the curing of the buffer organic layer can be placed in a PECVD chamber; if the time interval is long, the curing of the buffer organic layer can be placed in the pretreatment chamber of the organic encapsulation layer 42 process to ensure Good contact angle properties.
  • plasma curing with different concentrations can be carried out in different regions when the buffer organic layer is solidified; The concentration is lower than that of the plasma passing through the central region.
  • different plasmas may be injected in different zones during the curing of the buffer organic layer; for example, oxygen-containing plasma may be injected in the central area and fluorine-containing plasma may be injected in the edge area to cure the buffer organic layer.
  • the silicon nitride layer 43 is also an inorganic layer, and the inorganic layer can be formed by depositing silicon nitride SiNx, silicon dioxide SiO2, silicon oxynitride layer 41SiON, aluminum oxide AlOx, etc. by PECVD.
  • silicon nitride is used to form the inorganic layer.
  • the silicon nitride layer 43 of the embodiment includes four layers of films, the four layers of films are uniform silicon nitride film, non-uniform silicon nitride film, uniform silicon nitride film, non-uniform silicon nitride film, i.e. nitrogen
  • the uniform film and the non-uniform film of the silicon nitride layer 43 are arranged at intervals.
  • the silicon nitride layer 43 is arranged in this way to make up for the shortcomings of poor film uniformity and insufficient passivation of the gradient silicon nitride process.
  • multiple silicon nitride films It can also reduce the absorption of light emitted by the light-emitting device inside the display screen by silicon nitride, increase photogenerated carriers, and improve the service life and efficiency of the display screen.
  • the following steps 1 to 6 describe the process of making the silicon nitride layer 43 in detail:
  • Step 1 pre-cleaning and depositing the first layer of uniform silicon nitride film.
  • ammonia gas is used to pre-clean the first layer of uniform silicon nitride film, and the cleaning time is 15s.
  • the deposition temperature is controlled at 400-440°C, and the deposition time is controlled at 110-115s.
  • the refractive index of the first layer of uniform silicon nitride film is controlled at 2.26-2.29, and the thickness of the first layer of uniform silicon nitride film is controlled at 10.5-11.5nm.
  • Step 2 Deposit the first layer of non-uniform silicon nitride film on the first layer of uniform silicon nitride film in step 1.
  • the deposition temperature is controlled at 420-450°C, and ammonia is introduced into the process chamber while depositing Gas and silane, the deposition time is controlled within 10-60s, the refractive index of the first layer of non-uniform silicon nitride film decreases from 2.25-2.30 to 2.10-2.15 at a uniform speed within the deposition set time, the first layer of non-uniform nitrogen
  • the silicon oxide film is controlled at 3.5-4.5nm.
  • Step 3 Deposit a second layer of uniform silicon nitride film on the first layer of non-uniform silicon nitride film in step 2; the deposition temperature is controlled at 430-480 ° C, and the process chamber is also ventilated Ammonia and silane are injected, and the deposition time is controlled at 300-450s; the uniformity of the second layer of silicon nitride film is controlled at 2.05-2.08, and the thickness of the second layer of uniform silicon nitride film is controlled at 50-55nm.
  • Step 4 Deposit a second layer of non-uniform silicon nitride film on the second layer of uniform silicon nitride film in step 3; the deposition temperature is controlled at 430-480 ° C, and the deposition time is also set to The process chamber is fed with ammonia gas and silane, and the deposition time is controlled within 60-120s. Within the deposition set time, the refractive index of the second layer of non-uniform silicon nitride film decreases from 2.05-2.08 to 1.9-2.0 at a uniform speed. The thickness of the second non-uniform silicon nitride film is controlled at 10-15nm.
  • Step 5 Ionize the ammonia gas in the process chamber.
  • the ionized ammonia gas can quickly enhance the hydrogen passivation on the surface of the silicon nitride film, and the ionization time is controlled at 80-120s.
  • Step 6 heat up and treat at a constant temperature.
  • the touch layer 7 of this embodiment is a flexible touch layer 7, the flexible touch layer 7 includes a flexible substrate, the surface of the flexible substrate is provided with a touch electrode, the touch electrode includes a first electrode and a second electrode, The first electrode and the second electrode are insulated from each other.
  • the reason why the flexible touch layer 7 is used in this embodiment is to apply to flexible display screens.
  • touch electrodes are arranged on the surface of the flexible base material of the flexible touch layer 7, thereby reducing the number of layers of the flexible base material, thereby reducing the thickness of the flexible touch layer 7. And when using the flexible touch layer 7 to prepare the touch display screen, only one bonding operation is required, which reduces the production process of the touch display screen and improves the production efficiency of the touch display screen, thereby reducing the Generation costs.
  • the inside of the packaging film 4 is the side facing the inside of the display screen, that is, it is close to the inside of the display screen to emit light.
  • the outer side of the packaging film 4 is the side facing the outside of the display screen, that is, the side away from the light-emitting device inside the display screen) will cause the film layer structure composed of the combined film layer and the packaging film 4 to reduce the display
  • the light output range of the screen, the light output range is the viewing angle range covered by the light.
  • the combined film layer composed of the color film 5 and the color-resisting film 6 is arranged inside the packaging film 4, which can increase the light emitting range of the film layer structure of the display screen, and the increase of the light emitting range can reduce the effect of the film layer structure on the brightness.
  • the degree of attenuation improves the brightness of the display screen, thereby reducing the degree of color shift caused by the decrease in brightness, and finally improving the user's experience of the display screen.
  • the disclosure discloses a display film layer structure, a mobile terminal and a method for manufacturing the film layer structure.
  • the method includes: manufacturing a silicon oxynitride layer 41 in the packaging film 4; manufacturing a combined silicon oxynitride layer 41 film layer; the organic encapsulation layer 42 in the encapsulation film 4 is fabricated on the combined film layer; the silicon nitride layer 43 in the encapsulation film 4 is produced on the organic encapsulation layer 42 .
  • the combined film layer composed of the color film 5 and the color resist film 6 is neither on the outside of the packaging film 4 nor on the inside of the packaging film 4, but just on the inside of the packaging film 4. This is because the color film 5 and the color film 6 are used.
  • the combined film layer formed by the resistive film 6 effectively reduces the thickness of the display screen, it also reduces the light emitting range of the light emitting device inside the display screen, and reducing the light emitting range will increase the degree of attenuation of the light emitted by the light emitting device, and finally Generally, the brightness of the display screen does not meet the requirements for use, which reduces the user experience.
  • the combined film layer is disposed inside the packaging film 4 , which can just avoid the above-mentioned adverse effects caused by the combined film layer reducing the thickness of the display screen.

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  • Electroluminescent Light Sources (AREA)

Abstract

La présente divulgation se rapporte au domaine de la fabrication de couches de film d'écran d'affichage, en particulier à une structure de couche de film d'écran d'affichage, un terminal mobile, et un procédé de fabrication d'une structure de couche de film. La structure de couche de film comprend une couche de film combinée composée de films de couleur et de matériaux de réserve de couleur et un film d'encapsulation composé d'une couche d'oxynitrure de silicium, une couche d'encapsulation organique et une couche de nitrure de silicium, la couche de film combinée étant située dans le film d'encapsulation. Indépendamment du fait que la couche de film combinée composée des films de couleur et des matériaux de réserve de couleur est disposée sur un côté externe ou un côté interne du film d'encapsulation, la structure de couche de film composée de la couche de film combinée et du film d'encapsulation réduisant une plage d'émergence de lumière d'un écran d'affichage est provoquée. Dans la présente divulgation, une couche de film combinée composée de films de couleur et de matériaux de réserve de couleur est disposée dans un film d'encapsulation, de telle sorte qu'une plage d'émergence de lumière d'une structure de couche de film d'un écran d'affichage peut être augmentée, et le degré d'atténuation de luminosité par la structure de couche de film peut être réduit en augmentant la plage d'émergence de lumière, ce qui permet d'améliorer la luminosité de l'écran d'affichage, de réduire davantage le degré de diffusion de couleur provoquée par la diminution de la luminosité, et enfin d'améliorer l'expérience d'un utilisateur sur l'écran d'affichage.
PCT/CN2021/124600 2021-08-12 2021-10-19 Structure de couche de film d'écran d'affichage, terminal mobile et procédé de fabrication de structure de couche de film WO2023015719A1 (fr)

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140062292A1 (en) * 2012-09-04 2014-03-06 Samsung Display Co., Ltd. Organic light-emitting display device and method of manufacturing the same
CN106229425A (zh) * 2016-09-09 2016-12-14 广州新视界光电科技有限公司 一种顶发射全彩有机发光显示器件及制备方法
CN109713026A (zh) * 2019-02-26 2019-05-03 京东方科技集团股份有限公司 一种硅基电致发光显示面板及其制造方法、显示装置
CN109817695A (zh) * 2019-03-27 2019-05-28 京东方科技集团股份有限公司 一种oled显示面板及制备方法、显示装置
CN110047889A (zh) * 2019-04-15 2019-07-23 昆山工研院新型平板显示技术中心有限公司 显示面板和显示装置
CN110504383A (zh) * 2019-08-27 2019-11-26 昆山工研院新型平板显示技术中心有限公司 显示面板及显示装置
CN110518151A (zh) * 2019-09-10 2019-11-29 昆山工研院新型平板显示技术中心有限公司 显示面板及显示装置
CN111430418A (zh) * 2020-04-01 2020-07-17 武汉华星光电半导体显示技术有限公司 Oled显示装置及制备方法
CN113054131A (zh) * 2021-03-10 2021-06-29 武汉华星光电半导体显示技术有限公司 显示面板、显示装置及显示面板的制作方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140062292A1 (en) * 2012-09-04 2014-03-06 Samsung Display Co., Ltd. Organic light-emitting display device and method of manufacturing the same
CN106229425A (zh) * 2016-09-09 2016-12-14 广州新视界光电科技有限公司 一种顶发射全彩有机发光显示器件及制备方法
CN109713026A (zh) * 2019-02-26 2019-05-03 京东方科技集团股份有限公司 一种硅基电致发光显示面板及其制造方法、显示装置
CN109817695A (zh) * 2019-03-27 2019-05-28 京东方科技集团股份有限公司 一种oled显示面板及制备方法、显示装置
CN110047889A (zh) * 2019-04-15 2019-07-23 昆山工研院新型平板显示技术中心有限公司 显示面板和显示装置
CN110047889B (zh) * 2019-04-15 2022-02-15 昆山工研院新型平板显示技术中心有限公司 显示面板和显示装置
CN110504383A (zh) * 2019-08-27 2019-11-26 昆山工研院新型平板显示技术中心有限公司 显示面板及显示装置
CN110518151A (zh) * 2019-09-10 2019-11-29 昆山工研院新型平板显示技术中心有限公司 显示面板及显示装置
CN111430418A (zh) * 2020-04-01 2020-07-17 武汉华星光电半导体显示技术有限公司 Oled显示装置及制备方法
WO2021196375A1 (fr) * 2020-04-01 2021-10-07 武汉华星光电半导体显示技术有限公司 Appareil d'affichage à oled et procédé de préparation
CN113054131A (zh) * 2021-03-10 2021-06-29 武汉华星光电半导体显示技术有限公司 显示面板、显示装置及显示面板的制作方法

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