WO2023011209A1 - Preparation method for photovoltaic assembly and photovoltaic assembly - Google Patents

Preparation method for photovoltaic assembly and photovoltaic assembly Download PDF

Info

Publication number
WO2023011209A1
WO2023011209A1 PCT/CN2022/107115 CN2022107115W WO2023011209A1 WO 2023011209 A1 WO2023011209 A1 WO 2023011209A1 CN 2022107115 W CN2022107115 W CN 2022107115W WO 2023011209 A1 WO2023011209 A1 WO 2023011209A1
Authority
WO
WIPO (PCT)
Prior art keywords
amorphous silicon
silicon layer
nano
film
transparent conductive
Prior art date
Application number
PCT/CN2022/107115
Other languages
French (fr)
Chinese (zh)
Inventor
陈海燕
杨慧
蒋方丹
吴坚
Original Assignee
嘉兴阿特斯技术研究院有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 嘉兴阿特斯技术研究院有限公司 filed Critical 嘉兴阿特斯技术研究院有限公司
Publication of WO2023011209A1 publication Critical patent/WO2023011209A1/en

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials

Definitions

  • the invention relates to the technical field of photovoltaic production, in particular to a method for preparing a photovoltaic module and the photovoltaic module.
  • heterojunction (HJT) cells have the advantages of low light attenuation and low temperature coefficient, which can reduce energy consumption and reduce thermal damage to silicon substrates, and have become a research hotspot in the industry in recent years.
  • the consumption and cost of low-temperature silver paste in the existing heterojunction battery structure are relatively high, which is an important factor restricting the application and development of heterojunction batteries.
  • the industry has also disclosed a technical solution for disposing nano-silver wire films on the surface of heterojunction cells to improve surface current collection capabilities.
  • the above-mentioned nano-silver wire films serve as a good conductive layer and can reduce the amount of silver paste used.
  • heterojunction cells and photovoltaic modules using nano-silver wire films still need to be improved in terms of product structure design and process. It is necessary to provide a new method for preparing photovoltaic modules and photovoltaic modules.
  • the purpose of the present invention is to provide a method for preparing a photovoltaic module and a photovoltaic module, which can improve the current collection and transmission performance of the battery surface in the module product, reduce silver paste consumption and material cost, and reduce shading loss.
  • the application provides a method for preparing a photovoltaic module, which mainly includes:
  • the battery string is placed between two encapsulating adhesive films, the silver nanowire film is located on the side of the base film facing the battery string, the battery string includes several heterojunction cells connected in series in sequence, and several of the One-to-one correspondence between heterojunction cells and nano-silver wire films;
  • the preparation of the encapsulation film includes coating the silver nanowire dispersion on several predetermined areas on the surface of the base film, and each of the predetermined areas is set no more than the heterojunction cell. size, and then dried to obtain several nano-silver wire films.
  • the temperature in the drying step is controlled at 70-100°C.
  • the thickness of the silver nano wire film is controlled to be 50-500 nm, and the square resistance is 40-100 ⁇ /sq.
  • the length of the silver nanowires in the silver nanowire film is set to 10-20 ⁇ m, and the diameter of the silver nanowires is set to 20-60 nm.
  • nano-silver wire thin films on the packaging film are arranged in a matrix; at least two battery strings are placed between two packaging films.
  • the preparation process of the heterojunction battery includes texturizing the surface of the silicon substrate;
  • the first intrinsic amorphous silicon layer, the first doped amorphous silicon layer, and the first transparent conductive layer are sequentially prepared on the front of the silicon substrate, and the second intrinsic amorphous silicon layer, the second doped amorphous silicon layer, and the second doped amorphous silicon layer are sequentially prepared on the back of the silicon substrate.
  • the front electrode includes at least two edges along the first A front busbar extending in a first direction
  • the back electrode includes at least two back busbars extending in a first direction.
  • the first intrinsic amorphous silicon layer, the second intrinsic amorphous silicon layer, the first doped amorphous silicon layer and the second doped amorphous silicon layer are all deposited by PECVD. have to;
  • the thicknesses of the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are set to 1-10 nm, and the thicknesses of the first doped amorphous silicon layer and the second doped amorphous silicon layer are set to 3 ⁇ 10nm.
  • the first transparent conductive layer and the second transparent conductive layer are both deposited by PVD method;
  • the thickness of the first transparent conductive layer and the second transparent conductive layer is set to 50-100 nm, and the square resistance of the first transparent conductive layer and the second transparent conductive layer is set to 30-120 ⁇ /sq.
  • the present application also provides a photovoltaic module, which includes a battery string and two encapsulating adhesive films arranged on both sides of the battery string.
  • the battery string includes several heterojunction cells connected in series;
  • the encapsulating adhesive film includes membrane and several pieces of nano-silver wire thin films arranged on the side of the base film facing the battery string, several of the nano-silver wire thin films are arranged at intervals, and each of the nano-silver wire thin films is connected to the corresponding heterojunction battery One-to-one correspondence settings.
  • the thickness of the silver nano wire film is controlled to be 50-500 nm, and the square resistance is 40-100 ⁇ /sq.
  • the length of the silver nanowires in the silver nanowire film is set to 10-20 ⁇ m, and the diameter of the silver nanowires is set to 20-60 nm.
  • nano-silver wire thin films on the packaging film are arranged in a matrix; at least two battery strings are placed between two packaging films.
  • the size of the silver nanowire film does not exceed the size of the heterojunction battery.
  • the heterojunction cell includes a silicon substrate, and the front side of the silicon substrate is sequentially stacked with a first intrinsic amorphous silicon layer, a first doped amorphous silicon layer, a first transparent conductive layer and The front electrode; the back side of the silicon substrate is sequentially stacked with a second intrinsic amorphous silicon layer, a second doped amorphous silicon layer, a second transparent conductive layer and a back electrode; the nano-silver wire film and the corresponding heterogeneous The first transparent conductive layer and the second transparent conductive layer on the surface of the junction cell are in contact.
  • the beneficial effect of the present application is: adopting the preparation method of the photovoltaic module and the photovoltaic module of the present application does not change the structure and process of the battery string, and does not affect the contact performance between the welding strip and the metal electrode on the surface of the heterojunction battery;
  • the nano-silver wire film on the encapsulation film is laminated to achieve electrical contact with the surface of the corresponding heterojunction battery, which can improve the current collection and transmission performance of the battery surface, reduce the consumption of silver paste and material costs, and realize the battery
  • the reduction of the number of metal grid lines on the surface reduces the shading loss and improves the conversion efficiency of module products; the preparation process of the nano-silver wire film is more convenient, which improves the field efficiency, and can complete multiple pieces of nano-silver on the surface of the entire base film at one time.
  • the wire film is prepared to obtain a gridded encapsulation film.
  • Fig. 1 is the structural representation of the photovoltaic module of the present application
  • Fig. 2 is a schematic plan view of the encapsulating adhesive film of the photovoltaic module of the present application
  • Fig. 3 is a structural schematic diagram of a heterojunction cell in a photovoltaic module of the present application
  • Fig. 4 is a schematic flow chart of the main steps of the method for preparing a photovoltaic module of the present application.
  • the present application provides a photovoltaic module 100 and a manufacturing method thereof.
  • the photovoltaic module 100 includes a battery string 10 and two encapsulation films 20 arranged on both sides of the battery string 10.
  • the battery string 10 includes a number of heterojunction cells 11 connected in series in series and connected to the heterojunction.
  • the welding ribbon 12 on the surface of the battery 11; the encapsulation adhesive film 20 includes a base film 21 and several pieces of nano-silver wire films 22 arranged on the side of the base film 21 facing the battery string 10, each of the nano-silver wires
  • the thin films 22 all correspond to the corresponding heterojunction cells 11 .
  • the heterojunction cell 11 is generally arranged in a rectangular or similar rectangular shape, and the size of the silver nanowire film 22 is set not to exceed the size of the heterojunction cell 11 to avoid edge leakage.
  • the size of the nano-silver wire film 22 will be set slightly smaller than the size of the corresponding heterojunction cell 11, preferably the length difference between the two corresponding side edges is set at 2-3mm to ensure that the nano-silver wire film 22
  • the wire thin film 22 can increase the current transmission on the surface of the battery, and at the same time reduce the risk of edge leakage.
  • the welding ribbon 12 can be a flat welding ribbon, a round welding ribbon or a metal welding ribbon with other cross-sectional shapes, and the welding ribbon 12 is welded to the metal electrode on the surface of the heterojunction battery 11; the battery string A bus bar (not shown) is also provided at the end of 10 , and the solder strip 12 is also used to connect the heterojunction battery at the end to the bus bar.
  • the base film 21 can use existing film materials such as EVA, PVB, POE, etc.; the thickness of the silver nanowire film 22 is set to 50-500 nm, and the square resistance is set to 40-100 ⁇ /sq.
  • the length of the silver nanowires in the silver nanowire film 22 is set to be 10-20 ⁇ m, and the diameter of the silver nanowires is set to be 20-60 nm. It should also be noted that the thickness and specific specifications of the base films 21 of the two encapsulating adhesive films 20 arranged on both sides of the battery string 10 may be the same or different; The thickness, square resistance, etc. can also be set to be the same or different.
  • the heterojunction cell 11 includes a silicon substrate 110, and the front side of the silicon substrate 110 is sequentially stacked with a first intrinsic amorphous silicon layer 111, a first doped amorphous silicon layer 113, a first transparent conductive layer 115 and the front side. Electrode 117 ; the backside of the silicon substrate 110 is sequentially stacked with a second intrinsic amorphous silicon layer 112 , a second doped amorphous silicon layer 114 , a second transparent conductive layer 116 and a backside electrode 118 .
  • the silicon substrate 110 is set as an N-type or P-type crystalline silicon wafer, the thickness of the silicon substrate 110 is set to 50-300 ⁇ m, and its resistivity is set to 0.5-3.5 ⁇ cm, preferably 2-3 ⁇ cm.
  • the doping type of the first doped amorphous silicon layer 113 is opposite to that of the second doped amorphous silicon layer 114 , and here, the first doped amorphous silicon layer 113 is disposed on the front side of the silicon substrate 110 That is, the light-receiving surface, and the second doped amorphous silicon layer 114 is disposed on the back surface of the silicon substrate 110 , that is, the backlight surface.
  • the silicon substrate 110 adopts an N-type single crystal silicon wafer, and the first doped amorphous silicon layer 113 is a P-type doped layer, which can usually be set as a boron-doped layer;
  • the crystalline silicon layer 114 is an N-type doped layer, usually a phosphorus doped layer.
  • the front electrode 117 includes at least two front busbars extending along the first direction
  • the back electrode 118 includes at least two back busbars extending along the first direction
  • both the front busbars and the back busbars The positions are corresponding, and the number of the front busbars and the back busbars is consistent with the number of the welding strips 12 .
  • the front electrode 117 and the back electrode 118 can be obtained by screen printing and curing corresponding low-temperature silver paste; moreover, the front busbar and the back busbar can be continuously extended along the first direction, or along the first direction.
  • the arrangement in the first direction is discontinuous, and is connected to the corresponding soldering strips 12 through a plurality of pads arranged at intervals.
  • the nano-silver wire film 22 as a conductive material layer, can cooperate with the first transparent conductive layer 115 and the second transparent conductive layer 116 to realize the collection and transmission of battery surface current , effectively reduce the transmission resistance, and enhance the surface current collection capability; and the silver nano wire film 22 also has excellent light transmission, which does not affect the absorption and utilization of light. It is easy to understand that the current collection and lateral transmission performance on the surface of the heterojunction battery 11 is improved, and without affecting the current transmission performance, the auxiliary grid lines on the surface of the battery can be reduced or even eliminated, and the shading loss can be reduced.
  • the thickness of the first intrinsic amorphous silicon layer 111 and the second intrinsic amorphous silicon layer 112 is set to be 1-10 nm; the first doped amorphous silicon layer 113 and the second doped amorphous silicon layer
  • the thickness of the silicon layer 114 is set to be 3-10 nm.
  • the first intrinsic amorphous silicon layer 111 and the second intrinsic amorphous silicon layer 112 can be adjusted to form a corresponding multi-layer composite structure; in addition, the first intrinsic amorphous silicon layer 111, the second intrinsic amorphous silicon layer
  • the overall thickness of the doped amorphous silicon layer 113 is preferably set to be smaller than the overall thickness of the second intrinsic amorphous silicon layer 112 and the second doped amorphous silicon layer 114, so as to reduce the light absorption loss of the light-receiving surface and improve the short-circuit current and conversion efficiency .
  • the thickness of the first transparent conductive layer 115 and the second transparent conductive layer 116 is set to 50-100 nm, and the square resistance of the first transparent conductive layer 115 and the second transparent conductive layer 116 is set to 30-120 ⁇ /sq.
  • the first transparent conductive layer 115 and the second transparent conductive layer 116 use a transparent oxide conductive film, which forms a good electrical connection with the first doped amorphous silicon layer 113 and the second doped amorphous silicon layer 114. sexual contact.
  • the thickness and specific composition of the first transparent conductive layer 115 and the second transparent conductive layer 116 can be adjusted accordingly according to product design requirements.
  • the preparation method of the photovoltaic module 100 includes:
  • the encapsulating adhesive film 20 Prepare the encapsulating adhesive film 20, apply the nano-silver wire dispersion on several predetermined areas on the surface of the base film 21, each of the predetermined areas is set not to exceed the size of the heterojunction battery 11, and then dry to obtain A plurality of nano-silver wire films 22, the plurality of nano-silver wire films 22 are spaced from each other and arranged in a matrix;
  • the battery string 10 is placed between two encapsulating adhesive films 20, the silver nanowire film 22 of the encapsulating adhesive film 20 is located on the side of the base film 21 facing the battery string 10, and the battery string 10 is Each heterojunction cell 11 and the nano-silver wire film 22 are set in one-to-one correspondence;
  • the nano-silver wire dispersion liquid is mainly obtained by dispersing the nano-silver wires of predetermined specifications in a carrier composed of a solvent such as isopropanol; the temperature of the drying step is preferably controlled at 70-100°C to avoid the base film The molecular structure and properties of 21 changed, which affected the subsequent lamination and packaging.
  • the photovoltaic module 100 includes at least two battery strings 10 connected in series or parallel, that is, at least two battery strings 10 are discharged into the two packaging films 20 according to a predetermined pattern, and then layered. pressure.
  • Texturing etching on the surface of the silicon substrate 110 to form a pyramid-shaped texture
  • the first intrinsic amorphous silicon layer 111, the first doped amorphous silicon layer 113, and the first transparent conductive layer 115 are sequentially prepared on the front side of the silicon substrate 110, and the second intrinsic amorphous silicon layer 115 is sequentially prepared on the back side of the silicon substrate 110.
  • a front electrode 117 is prepared on the surface of the first transparent conductive layer 115
  • a back electrode 118 is prepared on the surface of the second transparent conductive layer 116 .
  • the "texturing” step specifically includes performing alkali texturing on both sides of the silicon substrate 110 with an aqueous solution of KOH, NaOH or TMAH, and controlling the texture height on the surface of the silicon substrate 110 to be 0.5-5 ⁇ m, preferably 1-3 ⁇ m.
  • the surface morphology of the silicon substrate 110 can be adjusted by adjusting the solution concentration, temperature and reaction time, and predetermined texturing additives can be added according to product requirements to improve the quality of the textured surface.
  • the first intrinsic amorphous silicon layer 111 , the first doped amorphous silicon layer 113 , the second intrinsic amorphous silicon layer 112 , and the second doped amorphous silicon layer 114 are all deposited by PECVD. In actual production, the first intrinsic amorphous silicon layer 111, the first doped amorphous silicon layer 113, the second intrinsic amorphous silicon layer 112, and the second doped amorphous silicon layer 114 are respectively prepared in different reaction chambers. Chamber completes deposition preparation.
  • the reaction gas of the first intrinsic amorphous silicon layer 111 and the second intrinsic amorphous silicon layer 112 is usually SiH4 diluted with H2, and the film growth is completed under the action of a predetermined radio frequency power supply, and the proportion of H2/
  • the adjustment of SiH4 can correspondingly obtain the first intrinsic amorphous silicon layer 111 and the second intrinsic amorphous silicon layer 112 with different characteristics.
  • the reaction gas of the first doped amorphous silicon layer 113 includes B2H6, SiH4, H2; the reaction gas of the second doped amorphous silicon layer 114 includes PH3, SiH4, H2.
  • the temperature of the above-mentioned reaction chamber can be set at about 180°C, and the pressure can be controlled at 30-200 Pa. By adjusting the reaction gas composition, temperature and pressure, etc., film structures with different characteristics can be produced.
  • the first transparent conductive layer 115 and the second transparent conductive layer 116 are deposited by PVD method, which mainly include indium oxide or zinc oxide, and may also include tin oxide, aluminum oxide, calcium oxide, tungsten oxide, titanium oxide and oxide One or more of zirconium.
  • the pastes used for the front electrode 117 and the back electrode 118 can be the same or different, and the preparation method includes printing the front silver paste on the first transparent conductive layer 115 by screen printing, and then drying Then the silicon base 110 is turned over, and the back silver paste is printed on the second transparent conductive layer 116 by screen printing method, and dried; then the above-mentioned silicon base 110 is sent into a curing furnace for low-temperature curing to obtain the front side electrode 117 and back electrode 118 .
  • the curing temperature is usually set at 150-200° C.
  • the curing time is usually set at 15-30 minutes. It is easy to understand that the printing and drying processes on both sides of the silicon substrate 110 can be switched.
  • the manufacturing method of the photovoltaic module 100 also includes steps such as inspection, frame mounting, junction box installation, and power test after the lamination is completed, which will not be repeated here.
  • the photovoltaic module 100 and its preparation method of the present application does not change the structure and process of the battery string 10, nor does it affect the contact performance between the welding ribbon 12 and the metal electrode on the surface of the heterojunction battery 11;
  • the silver nano wire film 22 is in contact with the first transparent conductive layer 115 and the second transparent conductive layer 116 on the surface of the corresponding heterojunction battery 11 to improve the current collection and transmission performance of the battery surface and reduce the consumption of silver paste and material costs, can also reduce or even cancel the metal grid lines on the battery surface, reduce shading loss, and improve the conversion efficiency of component products; and the several nano silver wire films 22 on the packaging film 20 can be coated and dried at one time It is more convenient and can improve production efficiency.

Abstract

A preparation method for a photovoltaic assembly and a photovoltaic assembly. The preparation method comprises: preparing packaging adhesive films: preparing a plurality of silver nanowire films on the surface of one side of a base film, the plurality of silver nanowire films being spaced apart from each other; placing a cell string between two packaging adhesive films, the silver nanowire films being located on the side of the base film facing the cell string, the cell string comprising a plurality of heterojunction cells that are successively connected in series, and the plurality of heterojunction cells and the silver nanowire films being arranged in a one-to-one correspondence manner; and performing lamination, so that the cell string and the packaging adhesive films are combined as a whole. The silver nanowire films can be in contact with the surfaces of the heterojunction cells after being laminated, so that the current collection and transmission performance of the surfaces of the cells is improved, thereby reducing the consumption of silver paste and the material cost of the heterojunction cells; metal grid wires on the surfaces of the cells can also be reduced, the shading loss is reduced, and the conversion efficiency of the photovoltaic assembly is improved.

Description

光伏组件的制备方法及光伏组件Preparation method of photovoltaic module and photovoltaic module 技术领域technical field
本发明涉及光伏生产技术领域，尤其涉及一种光伏组件的制备方法与光伏组件。The invention relates to the technical field of photovoltaic production, in particular to a method for preparing a photovoltaic module and the photovoltaic module.
背景技术Background technique
随着光伏产业的迅速发展，国内外市场对太阳能电池效率与性能的要求也越来越高，这也推动众多厂商积极进行新型电池结构及生产工艺的研究。其中，异质结(Heterojunction，HJT)电池具有低光衰、低温度系数等优势，能够降低能耗的同时减少硅基底的热损伤，近年已成为业内研究热点。With the rapid development of the photovoltaic industry, domestic and foreign markets have higher and higher requirements for the efficiency and performance of solar cells, which has also driven many manufacturers to actively conduct research on new cell structures and production processes. Among them, heterojunction (HJT) cells have the advantages of low light attenuation and low temperature coefficient, which can reduce energy consumption and reduce thermal damage to silicon substrates, and have become a research hotspot in the industry in recent years.
现有异质结电池结构中低温银浆的耗量与成本较高，此一点是制约异质结电池应用与发展的重要因素。业内现也已公开在异质结电池表面设置纳米银线薄膜，以提高表面电流收集能力的技术方案，上述纳米银线薄膜作为良好的导电层，可以降低银浆用量。目前而言，采用纳米银线薄膜的异质结电池及光伏组件在产品结构设计与工艺制程方面仍亟需完善，有必要提供一种新的光伏组件的制备方法与光伏组件。The consumption and cost of low-temperature silver paste in the existing heterojunction battery structure are relatively high, which is an important factor restricting the application and development of heterojunction batteries. The industry has also disclosed a technical solution for disposing nano-silver wire films on the surface of heterojunction cells to improve surface current collection capabilities. The above-mentioned nano-silver wire films serve as a good conductive layer and can reduce the amount of silver paste used. At present, heterojunction cells and photovoltaic modules using nano-silver wire films still need to be improved in terms of product structure design and process. It is necessary to provide a new method for preparing photovoltaic modules and photovoltaic modules.
发明内容Contents of the invention
本发明的目的在于提供一种光伏组件的制备方法与光伏组件，能够提高组件产品中电池表面的电流收集与传输性能，降低银浆耗量与材料成本，减小遮光损失。The purpose of the present invention is to provide a method for preparing a photovoltaic module and a photovoltaic module, which can improve the current collection and transmission performance of the battery surface in the module product, reduce silver paste consumption and material cost, and reduce shading loss.
为实现上述发明目的，本申请提供了一种光伏组件的制备方法，主 要包括：In order to achieve the above-mentioned purpose of the invention, the application provides a method for preparing a photovoltaic module, which mainly includes:
制备封装胶膜，在基膜一侧表面制备若干块纳米银线薄膜，若干所述纳米银线薄膜相互间隔设置；Prepare an encapsulating adhesive film, prepare several pieces of nano-silver wire films on one side of the base film, and several of the nano-silver wire films are arranged at intervals;
将电池串放置在两张封装胶膜之间，所述纳米银线薄膜位于所述基膜朝向所述电池串的一侧，所述电池串包括依次串联的若干异质结电池，若干所述异质结电池与纳米银线薄膜一一对应设置；The battery string is placed between two encapsulating adhesive films, the silver nanowire film is located on the side of the base film facing the battery string, the battery string includes several heterojunction cells connected in series in sequence, and several of the One-to-one correspondence between heterojunction cells and nano-silver wire films;
层压，使得所述电池串与封装胶膜结合为一体。laminating, so that the battery strings are integrated with the encapsulation film.
作为本发明的进一步改进，所述封装胶膜的制备包括将纳米银线分散液涂布在所述基膜表面的若干既定区域，每一所述既定区域均设置不超过所述异质结电池的尺寸，再进行烘干，得到若干所述纳米银线薄膜。As a further improvement of the present invention, the preparation of the encapsulation film includes coating the silver nanowire dispersion on several predetermined areas on the surface of the base film, and each of the predetermined areas is set no more than the heterojunction cell. size, and then dried to obtain several nano-silver wire films.
作为本发明的进一步改进，所述烘干步骤的温度控制在70～100℃。As a further improvement of the present invention, the temperature in the drying step is controlled at 70-100°C.
作为本发明的进一步改进，所述封装胶膜的制备过程中控制所述纳米银线薄膜的厚度为50～500nm，方阻为40～100Ω/sq。As a further improvement of the present invention, during the preparation process of the packaging adhesive film, the thickness of the silver nano wire film is controlled to be 50-500 nm, and the square resistance is 40-100 Ω/sq.
作为本发明的进一步改进，所述纳米银线薄膜中的纳米银线的长度设置为10～20μm，且该纳米银线的直径设置为20～60nm。As a further improvement of the present invention, the length of the silver nanowires in the silver nanowire film is set to 10-20 μm, and the diameter of the silver nanowires is set to 20-60 nm.
作为本发明的进一步改进，所述封装胶膜上的若干纳米银线薄膜呈矩阵排布；两张所述封装胶膜之间置入至少两串所述电池串。As a further improvement of the present invention, several nano-silver wire thin films on the packaging film are arranged in a matrix; at least two battery strings are placed between two packaging films.
作为本发明的进一步改进，所述异质结电池的制备过程包括对硅基底表面进行制绒；As a further improvement of the present invention, the preparation process of the heterojunction battery includes texturizing the surface of the silicon substrate;
在硅基底正面依次制备第一本征非晶硅层、第一掺杂非晶硅层与第一透明导电层，在硅基底背面依次制备第二本征非晶硅层、第二掺杂非晶硅层与第二透明导电层；The first intrinsic amorphous silicon layer, the first doped amorphous silicon layer, and the first transparent conductive layer are sequentially prepared on the front of the silicon substrate, and the second intrinsic amorphous silicon layer, the second doped amorphous silicon layer, and the second doped amorphous silicon layer are sequentially prepared on the back of the silicon substrate. a crystalline silicon layer and a second transparent conductive layer;
采用丝网印刷方法将既定的低温银浆印制在所述第一透明导电层、第二透明导电层表面，再经固化得到正面电极、背面电极，所述正面电极包括至少两条沿第一方向延伸的正面主栅，所述背面电极包括至少两条沿第一方向延伸的背面主栅。Use the screen printing method to print the predetermined low-temperature silver paste on the surface of the first transparent conductive layer and the second transparent conductive layer, and then cure to obtain the front electrode and the back electrode. The front electrode includes at least two edges along the first A front busbar extending in a first direction, and the back electrode includes at least two back busbars extending in a first direction.
作为本发明的进一步改进，所述第一本征非晶硅层、第二本征非晶硅层、第一掺杂非晶硅层及第二掺杂非晶硅层均采用PECVD方法沉积制得；As a further improvement of the present invention, the first intrinsic amorphous silicon layer, the second intrinsic amorphous silicon layer, the first doped amorphous silicon layer and the second doped amorphous silicon layer are all deposited by PECVD. have to;
所述第一本征非晶硅层、第二本征非晶硅层的厚度设置为1～10nm，所述第一掺杂非晶硅层、第二掺杂非晶硅层的厚度设置为3～10nm。The thicknesses of the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are set to 1-10 nm, and the thicknesses of the first doped amorphous silicon layer and the second doped amorphous silicon layer are set to 3~10nm.
作为本发明的进一步改进，所述第一透明导电层、第二透明导电层均采用PVD方法沉积制得；As a further improvement of the present invention, the first transparent conductive layer and the second transparent conductive layer are both deposited by PVD method;
所述第一透明导电层、第二透明导电层的厚度设置为50～100nm，且所述第一透明导电层、第二透明导电层的方阻设置为30～120Ω/sq。The thickness of the first transparent conductive layer and the second transparent conductive layer is set to 50-100 nm, and the square resistance of the first transparent conductive layer and the second transparent conductive layer is set to 30-120Ω/sq.
本申请还提供了一种光伏组件，包括电池串、分设在所述电池串两侧的两张封装胶膜，所述电池串包括若干依次串联的异质结电池；所述封装胶膜包括基膜及设置在所述基膜朝向所述电池串一侧的若干块纳米银线薄膜，若干所述纳米银线薄膜相互间隔设置，每一所述纳米银线薄膜均与相应的异质结电池一一对应设置。The present application also provides a photovoltaic module, which includes a battery string and two encapsulating adhesive films arranged on both sides of the battery string. The battery string includes several heterojunction cells connected in series; the encapsulating adhesive film includes membrane and several pieces of nano-silver wire thin films arranged on the side of the base film facing the battery string, several of the nano-silver wire thin films are arranged at intervals, and each of the nano-silver wire thin films is connected to the corresponding heterojunction battery One-to-one correspondence settings.
作为本发明的进一步改进，所述封装胶膜的制备过程中控制所述纳米银线薄膜的厚度为50～500nm，方阻为40～100Ω/sq。As a further improvement of the present invention, during the preparation process of the packaging adhesive film, the thickness of the silver nano wire film is controlled to be 50-500 nm, and the square resistance is 40-100 Ω/sq.
作为本发明的进一步改进，所述纳米银线薄膜中的纳米银线的长度设置为10～20μm，且该纳米银线的直径设置为20～60nm。As a further improvement of the present invention, the length of the silver nanowires in the silver nanowire film is set to 10-20 μm, and the diameter of the silver nanowires is set to 20-60 nm.
作为本发明的进一步改进，所述封装胶膜上的若干纳米银线薄膜呈矩阵排布；两张所述封装胶膜之间置入至少两串所述电池串。As a further improvement of the present invention, several nano-silver wire thin films on the packaging film are arranged in a matrix; at least two battery strings are placed between two packaging films.
作为本发明的进一步改进，所述纳米银线薄膜的大小不超过所述异质结电池的尺寸。As a further improvement of the present invention, the size of the silver nanowire film does not exceed the size of the heterojunction battery.
作为本发明的进一步改进，所述异质结电池包括硅基底，所述硅基底正面依次层叠设置有第一本征非晶硅层、第一掺杂非晶硅层、第一透明导电层与正面电极；所述硅基底背面依次层叠设置有第二本征非晶硅层、第二掺杂非晶硅层、第二透明导电层与背面电极；所述纳米银线薄 膜与相应的异质结电池表面的第一透明导电层、第二透明导电层相接触。As a further improvement of the present invention, the heterojunction cell includes a silicon substrate, and the front side of the silicon substrate is sequentially stacked with a first intrinsic amorphous silicon layer, a first doped amorphous silicon layer, a first transparent conductive layer and The front electrode; the back side of the silicon substrate is sequentially stacked with a second intrinsic amorphous silicon layer, a second doped amorphous silicon layer, a second transparent conductive layer and a back electrode; the nano-silver wire film and the corresponding heterogeneous The first transparent conductive layer and the second transparent conductive layer on the surface of the junction cell are in contact.
本申请的有益效果是：采用本申请光伏组件的制备方法与光伏组件，不改变所述电池串的结构与工艺制程，也不影响焊带与异质结电池表面金属电极的接触性能；所述封装胶膜上的纳米银线薄膜经层压后与相应的异质结电池表面实现电性接触，能够提高电池表面的电流收集与传输性能，降低银浆耗量与材料成本，也能实现电池表面金属栅线数目的减少，降低遮光损失，提升组件产品的转换效率；所述纳米银线薄膜的制备过程更为便捷，提高现场效率，一次性就能完成整张基膜表面多块纳米银线薄膜的制备，得到网格化的封装胶膜。The beneficial effect of the present application is: adopting the preparation method of the photovoltaic module and the photovoltaic module of the present application does not change the structure and process of the battery string, and does not affect the contact performance between the welding strip and the metal electrode on the surface of the heterojunction battery; The nano-silver wire film on the encapsulation film is laminated to achieve electrical contact with the surface of the corresponding heterojunction battery, which can improve the current collection and transmission performance of the battery surface, reduce the consumption of silver paste and material costs, and realize the battery The reduction of the number of metal grid lines on the surface reduces the shading loss and improves the conversion efficiency of module products; the preparation process of the nano-silver wire film is more convenient, which improves the field efficiency, and can complete multiple pieces of nano-silver on the surface of the entire base film at one time. The wire film is prepared to obtain a gridded encapsulation film.
附图说明Description of drawings
图1是本申请光伏组件的结构示意图；Fig. 1 is the structural representation of the photovoltaic module of the present application;
图2是本申请光伏组件的封装胶膜的平面结构示意图；Fig. 2 is a schematic plan view of the encapsulating adhesive film of the photovoltaic module of the present application;
图3是本申请光伏组件中异质结电池的结构示意图；Fig. 3 is a structural schematic diagram of a heterojunction cell in a photovoltaic module of the present application;
图4是本申请光伏组件的制备方法的主要步骤流程示意图。Fig. 4 is a schematic flow chart of the main steps of the method for preparing a photovoltaic module of the present application.
具体实施方式Detailed ways
以下将结合附图所示的实施方式对本发明进行详细描述。但该实施方式并不限制本发明，本领域的普通技术人员根据该实施方式所做出的结构、方法、或功能上的变换均包含在本发明的保护范围内。The present invention will be described in detail below with reference to the embodiments shown in the accompanying drawings. However, this embodiment does not limit the present invention, and any structural, method, or functional changes made by those skilled in the art according to this embodiment are included in the protection scope of the present invention.
参图1至图4所示，本申请提供了一种光伏组件100及其制备方法。所述光伏组件100包括电池串10、分设在所述电池串10两侧的两张封装胶膜20，所述电池串10包括若干依次串联的异质结电池11及连接在所述异质结电池11表面的焊带12；所述封装胶膜20包括基膜21及设置在所述基膜21朝向所述电池串10一侧的若干块纳米银线薄膜22，每 一所述纳米银线薄膜22均与相应的异质结电池11相对应。Referring to FIGS. 1 to 4 , the present application provides a photovoltaic module 100 and a manufacturing method thereof. The photovoltaic module 100 includes a battery string 10 and two encapsulation films 20 arranged on both sides of the battery string 10. The battery string 10 includes a number of heterojunction cells 11 connected in series in series and connected to the heterojunction. The welding ribbon 12 on the surface of the battery 11; the encapsulation adhesive film 20 includes a base film 21 and several pieces of nano-silver wire films 22 arranged on the side of the base film 21 facing the battery string 10, each of the nano-silver wires The thin films 22 all correspond to the corresponding heterojunction cells 11 .
所述异质结电池11通常设置呈矩形或类矩形，所述纳米银线薄膜22的大小设置不超过所述异质结电池11的尺寸，避免发生边缘漏电。考虑实际生产中的操作误差，所述纳米银线薄膜22的尺寸会设置略小于相应异质结电池11的尺寸，优选将两者相应一侧边缘的长度差设置在2～3mm，保证纳米银线薄膜22对电池表面电流传输的增益，同时降低边缘漏电风险。The heterojunction cell 11 is generally arranged in a rectangular or similar rectangular shape, and the size of the silver nanowire film 22 is set not to exceed the size of the heterojunction cell 11 to avoid edge leakage. Considering the operational error in actual production, the size of the nano-silver wire film 22 will be set slightly smaller than the size of the corresponding heterojunction cell 11, preferably the length difference between the two corresponding side edges is set at 2-3mm to ensure that the nano-silver wire film 22 The wire thin film 22 can increase the current transmission on the surface of the battery, and at the same time reduce the risk of edge leakage.
所述焊带12可采用扁平焊带、圆形焊带或具有其它截面形态的金属焊带，所述焊带12焊连在所述异质结电池11表面的金属电极上；所述电池串10的末端还设有汇流条(未图示)，所述焊带12还用以将末端的异质结电池连接至所述汇流条。所述基膜21可采用现有的EVA、PVB、POE等业内已有的胶膜材料；所述纳米银线薄膜22的厚度设置为50～500nm，方阻设置为40～100Ω/sq。所述纳米银线薄膜22中的纳米银线的长度设置为10～20μm，且该纳米银线的直径设置为20～60nm。还需要说明的是，分设在所述电池串10两侧的两张封装胶膜20的基膜21的厚度、具体规格可以相同或不同；两张所述封装胶膜20中纳米银线薄膜22的厚度、方阻等也可以设置相同或不同。The welding ribbon 12 can be a flat welding ribbon, a round welding ribbon or a metal welding ribbon with other cross-sectional shapes, and the welding ribbon 12 is welded to the metal electrode on the surface of the heterojunction battery 11; the battery string A bus bar (not shown) is also provided at the end of 10 , and the solder strip 12 is also used to connect the heterojunction battery at the end to the bus bar. The base film 21 can use existing film materials such as EVA, PVB, POE, etc.; the thickness of the silver nanowire film 22 is set to 50-500 nm, and the square resistance is set to 40-100 Ω/sq. The length of the silver nanowires in the silver nanowire film 22 is set to be 10-20 μm, and the diameter of the silver nanowires is set to be 20-60 nm. It should also be noted that the thickness and specific specifications of the base films 21 of the two encapsulating adhesive films 20 arranged on both sides of the battery string 10 may be the same or different; The thickness, square resistance, etc. can also be set to be the same or different.
所述异质结电池11包括硅基底110，所述硅基底110正面依次层叠设置有第一本征非晶硅层111、第一掺杂非晶硅层113、第一透明导电层115与正面电极117；所述硅基底110背面依次层叠设置有第二本征非晶硅层112、第二掺杂非晶硅层114、第二透明导电层116与背面电极118。The heterojunction cell 11 includes a silicon substrate 110, and the front side of the silicon substrate 110 is sequentially stacked with a first intrinsic amorphous silicon layer 111, a first doped amorphous silicon layer 113, a first transparent conductive layer 115 and the front side. Electrode 117 ; the backside of the silicon substrate 110 is sequentially stacked with a second intrinsic amorphous silicon layer 112 , a second doped amorphous silicon layer 114 , a second transparent conductive layer 116 and a backside electrode 118 .
所述硅基底110设置为N型或P型晶体硅片，所述硅基底110的厚度设置为50～300μm，且其电阻率设置为0.5～3.5Ω·cm，优选为2～3Ω·cm。所述第一掺杂非晶硅层113与第二掺杂非晶硅层114的掺杂类型相反，此处，所述第一掺杂非晶硅层113设置在所述硅基底110的正面即受光面，所述第二掺杂非晶硅层114设置在所述硅基底110的背面 即背光面。示例地，所述硅基底110采用N型单晶硅片，所述第一掺杂非晶硅层113为P型掺杂层，通常可设置为硼掺杂层；所述第二掺杂非晶硅层114为N型掺杂层，通常可设置为磷掺杂层。The silicon substrate 110 is set as an N-type or P-type crystalline silicon wafer, the thickness of the silicon substrate 110 is set to 50-300 μm, and its resistivity is set to 0.5-3.5 Ω·cm, preferably 2-3 Ω·cm. The doping type of the first doped amorphous silicon layer 113 is opposite to that of the second doped amorphous silicon layer 114 , and here, the first doped amorphous silicon layer 113 is disposed on the front side of the silicon substrate 110 That is, the light-receiving surface, and the second doped amorphous silicon layer 114 is disposed on the back surface of the silicon substrate 110 , that is, the backlight surface. Exemplarily, the silicon substrate 110 adopts an N-type single crystal silicon wafer, and the first doped amorphous silicon layer 113 is a P-type doped layer, which can usually be set as a boron-doped layer; The crystalline silicon layer 114 is an N-type doped layer, usually a phosphorus doped layer.
所述正面电极117包括至少两条沿第一方向延伸的正面主栅，所述背面电极118包括至少两条沿第一方向延伸的背面主栅，所述正面主栅与背面主栅两者的位置相对应，且所述正面主栅、背面主栅的设置数目均与所述焊带12的数目相一致。所述正面电极117、背面电极118可采用相应的低温银浆经丝网印刷、固化得到；再有，所述正面主栅、背面主栅可沿所述第一方向呈连续延伸设置，或沿所述第一方向设置呈间断式设置，通过若干间隔排布的焊盘(pad)与相应焊带12相连接。The front electrode 117 includes at least two front busbars extending along the first direction, the back electrode 118 includes at least two back busbars extending along the first direction, and both the front busbars and the back busbars The positions are corresponding, and the number of the front busbars and the back busbars is consistent with the number of the welding strips 12 . The front electrode 117 and the back electrode 118 can be obtained by screen printing and curing corresponding low-temperature silver paste; moreover, the front busbar and the back busbar can be continuously extended along the first direction, or along the first direction. The arrangement in the first direction is discontinuous, and is connected to the corresponding soldering strips 12 through a plurality of pads arranged at intervals.
就其一所述异质结电池11来说，所述纳米银线薄膜22作为导电材料层可与所述第一透明导电层115、第二透明导电层116共同实现电池表面电流的收集与传输，有效减小传输电阻，增强表面电流收集能力；且所述纳米银线薄膜22还具有优良的透光性，不影响光线的吸收利用。容易理解地，所述异质结电池11表面的电流收集与横向传输性能得以改善，在不影响电流传输性能的前提下，可以减少甚而取消电池表面的副栅线，降低遮光损失。As for the heterojunction battery 11, the nano-silver wire film 22, as a conductive material layer, can cooperate with the first transparent conductive layer 115 and the second transparent conductive layer 116 to realize the collection and transmission of battery surface current , effectively reduce the transmission resistance, and enhance the surface current collection capability; and the silver nano wire film 22 also has excellent light transmission, which does not affect the absorption and utilization of light. It is easy to understand that the current collection and lateral transmission performance on the surface of the heterojunction battery 11 is improved, and without affecting the current transmission performance, the auxiliary grid lines on the surface of the battery can be reduced or even eliminated, and the shading loss can be reduced.
在此，所述第一本征非晶硅层111、第二本征非晶硅层112的厚度设置为1～10nm；所述第一掺杂非晶硅层113、第二掺杂非晶硅层114的厚度设置为3～10nm。其中，所述第一本征非晶硅层111、第二本征非晶硅层112可以通过工艺调整形成相应的多层复合结构；另，所述第一本征非晶硅层111、第一掺杂非晶硅层113的整体厚度优选设置小于第二本征非晶硅层112、第二掺杂非晶硅层114的整体厚度，减少受光面的吸光损失，提高短路电流与转换效率。Here, the thickness of the first intrinsic amorphous silicon layer 111 and the second intrinsic amorphous silicon layer 112 is set to be 1-10 nm; the first doped amorphous silicon layer 113 and the second doped amorphous silicon layer The thickness of the silicon layer 114 is set to be 3-10 nm. Wherein, the first intrinsic amorphous silicon layer 111 and the second intrinsic amorphous silicon layer 112 can be adjusted to form a corresponding multi-layer composite structure; in addition, the first intrinsic amorphous silicon layer 111, the second intrinsic amorphous silicon layer The overall thickness of the doped amorphous silicon layer 113 is preferably set to be smaller than the overall thickness of the second intrinsic amorphous silicon layer 112 and the second doped amorphous silicon layer 114, so as to reduce the light absorption loss of the light-receiving surface and improve the short-circuit current and conversion efficiency .
所述第一透明导电层115、第二透明导电层116的厚度设置为50～100nm，且所述第一透明导电层115、第二透明导电层116的方阻设置为 30～120Ω/sq。具体地，所述第一透明导电层115、第二透明导电层116采用透明氧化物导电薄膜，其与第一掺杂非晶硅层113、第二掺杂非晶硅层114形成良好的电性接触。所述第一透明导电层115、第二透明导电层116的厚度及具体构成可根据产品设计需求进行相应的调整。The thickness of the first transparent conductive layer 115 and the second transparent conductive layer 116 is set to 50-100 nm, and the square resistance of the first transparent conductive layer 115 and the second transparent conductive layer 116 is set to 30-120 Ω/sq. Specifically, the first transparent conductive layer 115 and the second transparent conductive layer 116 use a transparent oxide conductive film, which forms a good electrical connection with the first doped amorphous silicon layer 113 and the second doped amorphous silicon layer 114. sexual contact. The thickness and specific composition of the first transparent conductive layer 115 and the second transparent conductive layer 116 can be adjusted accordingly according to product design requirements.
所述光伏组件100的制备方法包括：The preparation method of the photovoltaic module 100 includes:
制备封装胶膜20，将纳米银线分散液涂布在基膜21表面的若干既定区域，每一所述既定区域均设置不超过所述异质结电池11的尺寸，再进行烘干，得到若干块纳米银线薄膜22，若干块所述纳米银线薄膜22相互间隔且呈矩阵排布；Prepare the encapsulating adhesive film 20, apply the nano-silver wire dispersion on several predetermined areas on the surface of the base film 21, each of the predetermined areas is set not to exceed the size of the heterojunction battery 11, and then dry to obtain A plurality of nano-silver wire films 22, the plurality of nano-silver wire films 22 are spaced from each other and arranged in a matrix;
将电池串10放置在两张封装胶膜20之间，所述封装胶膜20的纳米银线薄膜22位于所述基膜21朝向所述电池串10的一侧，并使得所述电池串10中各异质结电池11与纳米银线薄膜22一一对应设置；The battery string 10 is placed between two encapsulating adhesive films 20, the silver nanowire film 22 of the encapsulating adhesive film 20 is located on the side of the base film 21 facing the battery string 10, and the battery string 10 is Each heterojunction cell 11 and the nano-silver wire film 22 are set in one-to-one correspondence;
层压，使得所述电池串10与封装胶膜20结合为一体。Laminating, so that the battery string 10 is combined with the encapsulation film 20 as a whole.
所述纳米银线分散液主要是将既定规格的纳米银线分散在异丙醇等溶剂组成的载体中得到；所述烘干步骤的温度优选控制在70～100℃，以避免所述基膜21的分子结构与性征发生变化，影响后续层压封装。另就实际产品设计来看，所述光伏组件100包括串联或并联的至少两串电池串10，即将至少两串电池串10按既定样式排放至两张所述封装胶膜20内，再进行层压。The nano-silver wire dispersion liquid is mainly obtained by dispersing the nano-silver wires of predetermined specifications in a carrier composed of a solvent such as isopropanol; the temperature of the drying step is preferably controlled at 70-100°C to avoid the base film The molecular structure and properties of 21 changed, which affected the subsequent lamination and packaging. In addition, from the point of view of actual product design, the photovoltaic module 100 includes at least two battery strings 10 connected in series or parallel, that is, at least two battery strings 10 are discharged into the two packaging films 20 according to a predetermined pattern, and then layered. pressure.
所述异质结电池11的制备过程：The preparation process of the heterojunction battery 11:
制绒，在硅基底110表面刻蚀形成金字塔状绒面；Texturing, etching on the surface of the silicon substrate 110 to form a pyramid-shaped texture;
在硅基底110的正面依次制备第一本征非晶硅层111、第一掺杂非晶硅层113、第一透明导电层115，并在所述硅基底110的背面依次制备第二本征非晶硅层112、第二掺杂非晶硅层114、第二透明导电层116；The first intrinsic amorphous silicon layer 111, the first doped amorphous silicon layer 113, and the first transparent conductive layer 115 are sequentially prepared on the front side of the silicon substrate 110, and the second intrinsic amorphous silicon layer 115 is sequentially prepared on the back side of the silicon substrate 110. an amorphous silicon layer 112, a second doped amorphous silicon layer 114, and a second transparent conductive layer 116;
在第一透明导电层115表面制备正面电极117，并在第二透明导电层116表面制备背面电极118。A front electrode 117 is prepared on the surface of the first transparent conductive layer 115 , and a back electrode 118 is prepared on the surface of the second transparent conductive layer 116 .
所述“制绒”步骤具体包括采用KOH或NaOH或TMAH的水溶液对硅基底110进行双面碱制绒，控制所述硅基底110表面的绒面高度为0.5～5μm，优选为1～3μm。所述制绒过程可通过溶液浓度、温度及反应时间的调节实现硅基底110表面形态的调整，还可以根据产品需求添加既定的制绒添加剂改进绒面质量。The "texturing" step specifically includes performing alkali texturing on both sides of the silicon substrate 110 with an aqueous solution of KOH, NaOH or TMAH, and controlling the texture height on the surface of the silicon substrate 110 to be 0.5-5 μm, preferably 1-3 μm. In the texturing process, the surface morphology of the silicon substrate 110 can be adjusted by adjusting the solution concentration, temperature and reaction time, and predetermined texturing additives can be added according to product requirements to improve the quality of the textured surface.
所述第一本征非晶硅层111、第一掺杂非晶硅层113及第二本征非晶硅层112、第二掺杂非晶硅层114均采用PECVD方法沉积制得。实际生产中，所述第一本征非晶硅层111、第一掺杂非晶硅层113、第二本征非晶硅层112、第二掺杂非晶硅层114分别在不同反应腔室完成沉积制备。所述第一本征非晶硅层111、第二本征非晶硅层112的反应气体通常采用H2稀释的SiH4，在既定的射频电源作用下完成膜层生长，通过反应气体占比H2/SiH4的调节，可相应得到具有不同特性的第一本征非晶硅层111、第二本征非晶硅层112。The first intrinsic amorphous silicon layer 111 , the first doped amorphous silicon layer 113 , the second intrinsic amorphous silicon layer 112 , and the second doped amorphous silicon layer 114 are all deposited by PECVD. In actual production, the first intrinsic amorphous silicon layer 111, the first doped amorphous silicon layer 113, the second intrinsic amorphous silicon layer 112, and the second doped amorphous silicon layer 114 are respectively prepared in different reaction chambers. Chamber completes deposition preparation. The reaction gas of the first intrinsic amorphous silicon layer 111 and the second intrinsic amorphous silicon layer 112 is usually SiH4 diluted with H2, and the film growth is completed under the action of a predetermined radio frequency power supply, and the proportion of H2/ The adjustment of SiH4 can correspondingly obtain the first intrinsic amorphous silicon layer 111 and the second intrinsic amorphous silicon layer 112 with different characteristics.
所述第一掺杂非晶硅层113的反应气体则包括B2H6、SiH4、H2；所述第二掺杂非晶硅层114的反应气体则包括PH3、SiH4、H2。通常地，上述反应腔室的温度可设置在180℃左右，压力控制在30～200pa，通过对反应气体组成、温度及压力等的调节能够制得不同特性的膜层结构。The reaction gas of the first doped amorphous silicon layer 113 includes B2H6, SiH4, H2; the reaction gas of the second doped amorphous silicon layer 114 includes PH3, SiH4, H2. Usually, the temperature of the above-mentioned reaction chamber can be set at about 180°C, and the pressure can be controlled at 30-200 Pa. By adjusting the reaction gas composition, temperature and pressure, etc., film structures with different characteristics can be produced.
所述第一透明导电层115、第二透明导电层116采用PVD方法沉积制得，其主要包括氧化铟或氧化锌，还可以包括氧化锡、氧化铝、氧化钙、氧化钨、氧化钛及氧化锆中的一种或几种。The first transparent conductive layer 115 and the second transparent conductive layer 116 are deposited by PVD method, which mainly include indium oxide or zinc oxide, and may also include tin oxide, aluminum oxide, calcium oxide, tungsten oxide, titanium oxide and oxide One or more of zirconium.
所述正面电极117、背面电极118所采用的浆料可以相同也可以不同，所述制备方法包括采用丝网印刷方法将正面银浆印制在所述第一透明导电层115上，进行烘干；再将硅基底110进行翻转，采用丝网印刷方法将背面银浆印制在所述第二透明导电层116上，烘干；再将上述硅基底110送入固化炉进行低温固化，得到正面电极117、背面电极118。其中，固化温度通常设置在150～200℃，固化时间通常设置在15～ 30min。容易理解地，所述硅基底110两侧的印刷与烘干制程可以调换。The pastes used for the front electrode 117 and the back electrode 118 can be the same or different, and the preparation method includes printing the front silver paste on the first transparent conductive layer 115 by screen printing, and then drying Then the silicon base 110 is turned over, and the back silver paste is printed on the second transparent conductive layer 116 by screen printing method, and dried; then the above-mentioned silicon base 110 is sent into a curing furnace for low-temperature curing to obtain the front side electrode 117 and back electrode 118 . Wherein, the curing temperature is usually set at 150-200° C., and the curing time is usually set at 15-30 minutes. It is easy to understand that the printing and drying processes on both sides of the silicon substrate 110 can be switched.
当然，所述光伏组件100的制备方法还包括在层压完成后，进行检测、装框、安装接线盒以及功率测试等步骤，此处不再一一赘述。Of course, the manufacturing method of the photovoltaic module 100 also includes steps such as inspection, frame mounting, junction box installation, and power test after the lamination is completed, which will not be repeated here.
综上所述，采用本申请光伏组件100及其制备方法，不改变所述电池串10的结构与工艺制程，也不影响焊带12与异质结电池11表面金属电极的接触性能；所述纳米银线薄膜22经层压后与相应的异质结电池11表面的第一透明导电层115、第二透明导电层116相接触，提高电池表面的电流收集与传输性能，降低银浆耗量与材料成本，也能减少甚而取消电池表面金属栅线，降低遮光损失，提升组件产品的转换效率；且所述封装胶膜20上的若干纳米银线薄膜22可一次性涂布、烘干制得，更为便捷，能提高生产效率。To sum up, using the photovoltaic module 100 and its preparation method of the present application does not change the structure and process of the battery string 10, nor does it affect the contact performance between the welding ribbon 12 and the metal electrode on the surface of the heterojunction battery 11; After lamination, the silver nano wire film 22 is in contact with the first transparent conductive layer 115 and the second transparent conductive layer 116 on the surface of the corresponding heterojunction battery 11 to improve the current collection and transmission performance of the battery surface and reduce the consumption of silver paste and material costs, can also reduce or even cancel the metal grid lines on the battery surface, reduce shading loss, and improve the conversion efficiency of component products; and the several nano silver wire films 22 on the packaging film 20 can be coated and dried at one time It is more convenient and can improve production efficiency.
应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施方式中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。It should be understood that although this description is described according to implementation modes, not each implementation mode only contains an independent technical solution, and this description in the description is only for clarity, and those skilled in the art should take the description as a whole, and each The technical solutions in the embodiments can also be properly combined to form other embodiments that can be understood by those skilled in the art.
上文所列出的一系列的详细说明仅仅是针对本发明的可行性实施方式的具体说明，它们并非用以限制本发明的保护范围，凡未脱离本发明技艺精神所作的等效实施方式或变更均应包含在本发明的保护范围之内。The series of detailed descriptions listed above are only specific descriptions for feasible implementations of the present invention, and they are not intended to limit the protection scope of the present invention. Any equivalent implementation or implementation that does not depart from the technical spirit of the present invention All changes should be included within the protection scope of the present invention.

Claims (15)

  1. 一种光伏组件的制备方法，其特征在于：A method for preparing a photovoltaic module, characterized in that:
    制备封装胶膜，在基膜一侧表面制备若干块纳米银线薄膜，若干所述纳米银线薄膜相互间隔设置；Prepare an encapsulating adhesive film, prepare several pieces of nano-silver wire films on one side of the base film, and several of the nano-silver wire films are arranged at intervals;
    将电池串放置在两张封装胶膜之间，所述纳米银线薄膜位于所述基膜朝向所述电池串的一侧，所述电池串包括依次串联的若干异质结电池，若干所述异质结电池与纳米银线薄膜一一对应设置；The battery string is placed between two encapsulating adhesive films, the silver nanowire film is located on the side of the base film facing the battery string, the battery string includes several heterojunction cells connected in series in sequence, and several of the One-to-one correspondence between heterojunction cells and nano-silver wire films;
    层压，使得所述电池串与封装胶膜结合为一体。laminating, so that the battery strings are integrated with the encapsulation film.
  2. 根据权利要求1所述的光伏组件的制备方法，其特征在于：所述封装胶膜的制备包括将纳米银线分散液涂布在所述基膜表面的若干既定区域，每一所述既定区域均设置不超过所述异质结电池的尺寸，再进行烘干，得到若干所述纳米银线薄膜。The preparation method of photovoltaic modules according to claim 1, characterized in that: the preparation of the encapsulant film includes coating nano-silver wire dispersion liquid on several predetermined areas on the surface of the base film, each of the predetermined areas All are set not to exceed the size of the heterojunction battery, and then dried to obtain several nano-silver wire thin films.
  3. 根据权利要求2所述的光伏组件的制备方法，其特征在于：所述烘干步骤的温度控制在70～100℃。The method for preparing a photovoltaic module according to claim 2, characterized in that: the temperature of the drying step is controlled at 70-100°C.
  4. 根据权利要求1-3任一项所述的光伏组件的制备方法，其特征在于：所述封装胶膜的制备过程中控制所述纳米银线薄膜的厚度为50～500nm，方阻为40～100Ω/sq。According to the method for preparing photovoltaic modules according to any one of claims 1-3, it is characterized in that: during the preparation process of the encapsulation film, the thickness of the nano-silver wire film is controlled to be 50-500 nm, and the square resistance is 40-500 nm. 100Ω/sq.
  5. 根据权利要求1-3任一项所述的光伏组件的制备方法，其特征在于：所述纳米银线薄膜中的纳米银线的长度设置为10～20μm，且该纳米银线的直径设置为20～60nm。The method for preparing photovoltaic modules according to any one of claims 1-3, characterized in that: the length of the silver nanowires in the silver nanowire film is set to 10-20 μm, and the diameter of the silver nanowires is set to 20~60nm.
  6. 根据权利要求1所述的光伏组件的制备方法，其特征在于：所述封装胶膜上的若干纳米银线薄膜呈矩阵排布；两张所述封装胶膜之间置 入至少两串所述电池串。The method for preparing a photovoltaic module according to claim 1, characterized in that: several nano-silver wire films on the encapsulation film are arranged in a matrix; at least two strings of the battery string.
  7. 根据权利要求1所述的光伏组件的制备方法，其特征在于：所述异质结电池的制备过程包括对硅基底表面进行制绒；The method for preparing photovoltaic modules according to claim 1, characterized in that: the preparation process of the heterojunction cell includes texturizing the surface of the silicon substrate;
    在硅基底正面依次制备第一本征非晶硅层、第一掺杂非晶硅层与第一透明导电层，在硅基底背面依次制备第二本征非晶硅层、第二掺杂非晶硅层与第二透明导电层；The first intrinsic amorphous silicon layer, the first doped amorphous silicon layer, and the first transparent conductive layer are sequentially prepared on the front of the silicon substrate, and the second intrinsic amorphous silicon layer, the second doped amorphous silicon layer, and the second doped amorphous silicon layer are sequentially prepared on the back of the silicon substrate. a crystalline silicon layer and a second transparent conductive layer;
    采用丝网印刷方法将既定的低温银浆印制在所述第一透明导电层、第二透明导电层表面，再经固化得到正面电极、背面电极，所述正面电极包括至少两条沿第一方向延伸的正面主栅，所述背面电极包括至少两条沿第一方向延伸的背面主栅。Use the screen printing method to print the predetermined low-temperature silver paste on the surface of the first transparent conductive layer and the second transparent conductive layer, and then cure to obtain the front electrode and the back electrode. The front electrode includes at least two edges along the first A front busbar extending in a first direction, and the back electrode includes at least two back busbars extending in a first direction.
  8. 根据权利要求7所述的光伏组件的制备方法，其特征在于：所述第一本征非晶硅层、第二本征非晶硅层、第一掺杂非晶硅层及第二掺杂非晶硅层均采用PECVD方法沉积制得；The method for preparing photovoltaic modules according to claim 7, characterized in that: the first intrinsic amorphous silicon layer, the second intrinsic amorphous silicon layer, the first doped amorphous silicon layer and the second doped amorphous silicon layer The amorphous silicon layer is deposited by PECVD method;
    所述第一本征非晶硅层、第二本征非晶硅层的厚度设置为1～10nm，所述第一掺杂非晶硅层、第二掺杂非晶硅层的厚度设置为3～10nm。The thicknesses of the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are set to 1-10 nm, and the thicknesses of the first doped amorphous silicon layer and the second doped amorphous silicon layer are set to 3~10nm.
  9. 根据权利要求7所述的光伏组件的制备方法，其特征在于：所述第一透明导电层、第二透明导电层均采用PVD方法沉积制得；The method for preparing photovoltaic modules according to claim 7, characterized in that: the first transparent conductive layer and the second transparent conductive layer are both deposited by PVD method;
    所述第一透明导电层、第二透明导电层的厚度设置为50～100nm，且所述第一透明导电层、第二透明导电层的方阻设置为30～120Ω/sq。The thickness of the first transparent conductive layer and the second transparent conductive layer is set to 50-100 nm, and the square resistance of the first transparent conductive layer and the second transparent conductive layer is set to 30-120Ω/sq.
  10. 一种光伏组件，包括电池串、分设在所述电池串两侧的两张封装胶膜，所述电池串包括若干依次串联的异质结电池；其特征在于：所述封装胶膜包括基膜及设置在所述基膜朝向所述电池串一侧的若干块纳 米银线薄膜，若干所述纳米银线薄膜相互间隔设置，每一所述纳米银线薄膜均与相应的异质结电池一一对应设置。A photovoltaic module, comprising a battery string and two encapsulating adhesive films arranged on both sides of the battery string, the battery string including a number of heterojunction cells connected in series in sequence; it is characterized in that: the encapsulating adhesive film includes a base film and a plurality of nano-silver wire films arranged on the side of the base film facing the battery string, the plurality of nano-silver wire films are arranged at intervals, and each of the nano-silver wire films is connected with a corresponding heterojunction battery One corresponding setting.
  11. 根据权利要求10所述的光伏组件，其特征在于：所述封装胶膜的制备过程中控制所述纳米银线薄膜的厚度为50～500nm，方阻为40～100Ω/sq。The photovoltaic module according to claim 10, characterized in that: during the preparation process of the encapsulating adhesive film, the thickness of the nano-silver wire film is controlled to be 50-500 nm, and the square resistance is 40-100Ω/sq.
  12. 根据权利要求10所述的光伏组件，其特征在于：所述纳米银线薄膜中的纳米银线的长度设置为10～20μm，且该纳米银线的直径设置为20～60nm。The photovoltaic module according to claim 10, characterized in that: the length of the nano-silver wire in the nano-silver wire film is set to 10-20 μm, and the diameter of the nano-silver wire is set to 20-60 nm.
  13. 根据权利要求10所述的光伏组件，其特征在于：所述封装胶膜上的若干纳米银线薄膜呈矩阵排布；两张所述封装胶膜之间置入至少两串所述电池串。The photovoltaic module according to claim 10, characterized in that: several nano-silver wire films on the encapsulation film are arranged in a matrix; at least two battery strings are placed between two of the encapsulation films.
  14. 根据权利要求10所述的光伏组件，其特征在于：所述纳米银线薄膜的大小不超过所述异质结电池的尺寸。The photovoltaic module according to claim 10, characterized in that: the size of the nano-silver wire film does not exceed the size of the heterojunction cell.
  15. 根据权利要求10所述的光伏组件，其特征在于：所述异质结电池包括硅基底，所述硅基底正面依次层叠设置有第一本征非晶硅层、第一掺杂非晶硅层、第一透明导电层与正面电极；所述硅基底背面依次层叠设置有第二本征非晶硅层、第二掺杂非晶硅层、第二透明导电层与背面电极；所述纳米银线薄膜与相应的异质结电池表面的第一透明导电层、第二透明导电层相接触。The photovoltaic module according to claim 10, wherein the heterojunction cell comprises a silicon substrate, and the front side of the silicon substrate is sequentially stacked with a first intrinsic amorphous silicon layer and a first doped amorphous silicon layer 1. The first transparent conductive layer and the front electrode; the back side of the silicon substrate is sequentially stacked with a second intrinsic amorphous silicon layer, a second doped amorphous silicon layer, a second transparent conductive layer and a back electrode; the nano-silver The line film is in contact with the first transparent conductive layer and the second transparent conductive layer on the surface of the corresponding heterojunction cell.
PCT/CN2022/107115 2021-08-05 2022-07-21 Preparation method for photovoltaic assembly and photovoltaic assembly WO2023011209A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202110894788.5A CN115706186A (en) 2021-08-05 2021-08-05 Preparation method of photovoltaic module and photovoltaic module
CN202110894788.5 2021-08-05

Publications (1)

Publication Number Publication Date
WO2023011209A1 true WO2023011209A1 (en) 2023-02-09

Family

ID=85155165

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/107115 WO2023011209A1 (en) 2021-08-05 2022-07-21 Preparation method for photovoltaic assembly and photovoltaic assembly

Country Status (2)

Country Link
CN (1) CN115706186A (en)
WO (1) WO2023011209A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116799085A (en) * 2023-06-19 2023-09-22 安徽国晟新能源科技有限公司 Photovoltaic module and packaging method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010045505A1 (en) * 2000-01-31 2001-11-29 Masashi Morizane Solar cell module
CN110416320A (en) * 2019-07-30 2019-11-05 苏州迈展自动化科技有限公司 A kind of no main grid photovoltaic module
CN110729377A (en) * 2018-07-16 2020-01-24 福建金石能源有限公司 Preparation method of double-sided power generation heterojunction solar cell and tile-stacked module thereof
CN111704866A (en) * 2020-06-29 2020-09-25 杭州福斯特应用材料股份有限公司 Anti PID encapsulation glued membrane and photovoltaic module
CN113013297A (en) * 2021-03-08 2021-06-22 无锡市联鹏新能源装备有限公司 Preparation method of grid-line-free heterojunction battery pack

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010045505A1 (en) * 2000-01-31 2001-11-29 Masashi Morizane Solar cell module
CN110729377A (en) * 2018-07-16 2020-01-24 福建金石能源有限公司 Preparation method of double-sided power generation heterojunction solar cell and tile-stacked module thereof
CN110416320A (en) * 2019-07-30 2019-11-05 苏州迈展自动化科技有限公司 A kind of no main grid photovoltaic module
CN111704866A (en) * 2020-06-29 2020-09-25 杭州福斯特应用材料股份有限公司 Anti PID encapsulation glued membrane and photovoltaic module
CN113013297A (en) * 2021-03-08 2021-06-22 无锡市联鹏新能源装备有限公司 Preparation method of grid-line-free heterojunction battery pack

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116799085A (en) * 2023-06-19 2023-09-22 安徽国晟新能源科技有限公司 Photovoltaic module and packaging method thereof
CN116799085B (en) * 2023-06-19 2024-02-09 安徽国晟新能源科技有限公司 Photovoltaic module and packaging method thereof

Also Published As

Publication number Publication date
CN115706186A (en) 2023-02-17

Similar Documents

Publication Publication Date Title
JPWO2011024534A1 (en) Multi-junction photoelectric conversion device, integrated multi-junction photoelectric conversion device, and manufacturing method thereof
CN104733557B (en) HIT solar energy battery and method for improving short-circuit current density of HIT battery
CN213340395U (en) Metal mesh grid interconnection structure
CN102569478A (en) Thin-film amorphous silicon N-type crystalline silicon heterojunction tandem solar cell
CN113823701A (en) Electrode design and battery interconnection method of double-sided power generation heterojunction solar battery
WO2023011209A1 (en) Preparation method for photovoltaic assembly and photovoltaic assembly
TW202046510A (en) Thin film photovoltaic cell series structure and preparation technology of thin film photovoltaic cell series structure
WO2019095662A1 (en) Solar battery with combined mwt and hit, and preparation method therefor
CN111403554A (en) Preparation method of solar cell and solar cell obtained by preparation method
CN216015395U (en) Electric connector and photovoltaic assembly adopting same
EP4345914A1 (en) Heterojunction cell, and photovoltaic module cell string and manufacturing method therefor
CN110350054A (en) A kind of printing process of solar energy crystal-silicon battery slice
WO2023011314A1 (en) Electrical connector, and photovoltaic assembly and method for manufacturing same
CN103000738A (en) Mechanical laminated cadmium telluride/polycrystalline silicon solar cell combination
CN215869424U (en) MWT-HJT battery pack structure
TW201532383A (en) I-v measurement method for solar cell, i-v measurement device for solar cell, manufacturing method for solar cell, manufacturing method for solar cell module, and solar cell module
CN114582983A (en) Heterojunction solar cell and preparation method thereof
CN212874518U (en) Solar cell
CN110690308A (en) Back contact heterojunction solar cell and module thereof
CN110212060B (en) Battery preparation method, battery assembly and solar power supply station
CN114093959A (en) Solar cell and photovoltaic module
CN115706187A (en) Preparation method of photovoltaic module and photovoltaic module
CN110957379A (en) Multi-grid electrode structure, heterojunction solar cell with same and preparation method of heterojunction solar cell
CN110600500A (en) Perovskite and silicon-based back of body contact battery stack battery structure of N type
CN115706181A (en) Electric connector, photovoltaic assembly and preparation method of photovoltaic assembly

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22851923

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE