WO2023010344A1 - Led芯片、显示面板及制备方法、电子设备 - Google Patents

Led芯片、显示面板及制备方法、电子设备 Download PDF

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Publication number
WO2023010344A1
WO2023010344A1 PCT/CN2021/110607 CN2021110607W WO2023010344A1 WO 2023010344 A1 WO2023010344 A1 WO 2023010344A1 CN 2021110607 W CN2021110607 W CN 2021110607W WO 2023010344 A1 WO2023010344 A1 WO 2023010344A1
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WIPO (PCT)
Prior art keywords
substrate
layer
groove
led chip
light
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PCT/CN2021/110607
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English (en)
French (fr)
Inventor
潘飞
刘政明
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重庆康佳光电技术研究院有限公司
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Priority to PCT/CN2021/110607 priority Critical patent/WO2023010344A1/zh
Publication of WO2023010344A1 publication Critical patent/WO2023010344A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations

Definitions

  • the present application relates to the display field, in particular to an LED chip, a display panel, a preparation method, and electronic equipment.
  • display panels using LEDs as pixel units have been put into use.
  • Such display panels include red sub-pixels R, green sub-pixels G and blue sub-pixels B.
  • both the red sub-pixel R and the green sub-pixel G are formed by blue LED chips: usually, a light-converting material is arranged on the light-emitting surface of the blue LED chip by means of inkjet printing, etc. The blue light emitted by the LED chip is converted into red light or green light.
  • the light conversion material set in this way is very easy to cross the border into the range of adjacent sub-pixels, thereby affecting the display effect of the display panel.
  • the purpose of this application is to provide an LED chip, a display panel and its preparation method, and electronic equipment, aiming at solving the problem of poor display effect of the display panel caused by the transgression of the light conversion material in the current display panel.
  • the application provides an LED chip, comprising:
  • the blue light epitaxial layer includes a first semiconductor layer, an active layer, and a second semiconductor layer, and the distance between the three and the substrate becomes larger in turn;
  • the chip electrode includes a first electrode that is electrically connected to the first semiconductor layer and the second semiconductor layer, respectively. , the second electrode;
  • the substrate can be used as the growth substrate of the blue light epitaxial layer, and the other surface of the substrate opposite to the epitaxial carrying surface is provided with a groove; the position of the groove is opposite to the position of the active layer, and it is configured as Holds optical material.
  • the groove can be used to accommodate the light conversion material, which avoids the problem of the light conversion material crossing the boundary, improves the purity of the light emitted by the LED chip, and is beneficial to enhancing the display effect of the display panel based on the LED chip.
  • the groove is set on the substrate, and its depth is only related to the thickness of the substrate and is not limited by other restrictions. This is conducive to setting the thickness of the light conversion material according to needs, improving the absorption and conversion rate of blue light, and further enhancing the display panel. display effect.
  • the present application also provides a display panel, including:
  • the LED pixel unit includes at least one of the red light sub-pixel and the green light sub-pixel, and the light-emitting element included is a grooved LED chip.
  • the grooved LED chip includes a substrate, a blue light epitaxial layer disposed on the epitaxial bearing surface of the substrate, and a chip electrode.
  • the blue epitaxial layer includes a first semiconductor layer, an active layer, and a second semiconductor layer, and the distances between the three and the substrate become larger in turn; the chip electrode includes a first semiconductor layer that is electrically connected to the first semiconductor layer and the second semiconductor layer, respectively.
  • the substrate can be used as the growth substrate of the blue light epitaxial layer, and the other surface of the substrate opposite to the epitaxial carrying surface is provided with a groove; the position of the groove is opposite to the position of the active layer, and it is configured In order to accommodate optical materials; the chip electrodes of the LED chip with grooves are bonded to the on-board electrodes on the driving substrate through the bonding material.
  • At least one of the red light sub-pixels and green light sub-pixels in the above display panel is formed by a grooved LED chip, because the substrate of the grooved LED chip is provided with a groove with a notch facing away from the blue light epitaxial layer, and the position of the groove is the same as that of the blue light epitaxial layer.
  • the active layer in the blue epitaxial layer is opposite, so when setting the light conversion material, the groove can be used to accommodate the light conversion material, which avoids the problem of the light conversion material crossing the boundary, improves the purity of the light emitted by the LED chip, and is conducive to enhancing The display effect of the display panel.
  • the groove is set on the substrate, and its depth is only related to the thickness of the substrate and is not limited by other restrictions. This is conducive to setting the thickness of the light conversion material according to needs, improving the absorption and conversion rate of blue light, and further enhancing the display panel. display effect.
  • the present application also provides an electronic device, which includes a processor and a display panel, and the processor and the display panel are connected in communication;
  • the display panel includes:
  • the LED pixel unit includes red light sub-pixels, green light sub-pixels and blue light sub-pixels, the light-emitting element contained in at least one of the red light sub-pixels and the green light sub-pixels is an LED chip with grooves, and the LED chip with grooves includes a substrate and is arranged on the substrate.
  • the present application also provides a LED chip preparation method, including:
  • the blue light epitaxial layer includes a first semiconductor layer, an active layer, and a second semiconductor layer, and the distances between the three and the substrate become larger in turn;
  • the electrodes include a first electrode and a second electrode electrically connected to the first semiconductor layer and the second semiconductor layer;
  • a groove is formed in the substrate with the slot facing away from the blue epitaxial layer and opposite to the position of the active layer, and the groove is configured to accommodate the optical material.
  • the present application also provides a method for manufacturing a display panel, including:
  • the blue light epitaxial layer includes a first semiconductor layer, an active layer, and a second semiconductor layer, and the distances between the three and the substrate become larger in turn;
  • the electrodes include a first electrode and a second electrode electrically connected to the first semiconductor layer and the second semiconductor layer;
  • Optical material is arranged in the groove.
  • the substrate of the LED chip is provided with a groove with a notch facing away from the blue light epitaxial layer , the position of the groove is opposite to the active layer in the blue light epitaxial layer, so when the light conversion material is set, the groove can be used to accommodate the light conversion material, avoiding the problem of the light conversion material crossing the boundary, and improving the light output of the LED chip
  • the purity is beneficial to enhance the display effect based on the display panel.
  • the groove is set on the substrate, and its depth is only related to the thickness of the substrate and is not limited by other restrictions. This is conducive to setting the thickness of the light conversion material according to needs, improving the absorption and conversion rate of blue light, and further enhancing the display panel. display effect.
  • the groove is used to accommodate the optical material, so that when the light conversion material is set, the groove can be used to accommodate the light conversion material, thereby avoiding the problem of the light conversion material crossing the boundary, which is conducive to improving the purity of the light emitted by the LED chip, and enhancing the light output based on the LED chip.
  • the groove is set on the substrate, and its depth is only related to the thickness of the substrate and is not limited by other restrictions.
  • the growth substrate can be directly formed with grooves without peeling off the growth substrate, which simplifies the preparation process of the LED chip, is conducive to improving production efficiency and reducing production cost.
  • the groove is used to accommodate the optical material, so that when the light conversion material is set, the groove can be used to accommodate the light conversion material, thereby avoiding the problem of the light conversion material crossing the boundary, which is conducive to improving the purity of the light emitted by the LED chip and enhancing the display panel-based display. display effect.
  • the groove is set on the substrate, and its depth is only related to the thickness of the substrate and is not limited by other restrictions.
  • the growth substrate can be directly formed with grooves without peeling off the growth substrate, which simplifies the preparation process of the LED chip, is conducive to improving production efficiency and reducing production cost.
  • FIG. 1 is a schematic structural diagram of an LED chip provided in an optional embodiment of the present application.
  • FIG. 2 is another schematic structural view of an LED chip provided in an optional embodiment of the present application.
  • FIG. 3 is another structural schematic diagram of an LED chip provided in an optional embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a display panel provided in an optional embodiment of the present application.
  • FIG. 5 is another schematic structural view of a display panel provided in an alternative embodiment of the present application.
  • FIG. 6 is another schematic structural diagram of a display panel provided in an alternative embodiment of the present application.
  • FIG. 7 is a schematic flow diagram of a method for preparing an LED chip provided in another optional embodiment of the present application.
  • Fig. 8 is a schematic diagram of a process state change of the LED chip preparation method provided in another optional embodiment of the present application.
  • FIG. 9 is a schematic flowchart of a method for manufacturing a display panel provided in another optional embodiment of the present application.
  • Fig. 10 is a schematic structural diagram of a display panel provided in another optional embodiment of the present application.
  • 10-LED chip 11-substrate; 110-groove; 111-reflective layer in the groove; 12-blue light epitaxial layer; 121-first semiconductor layer; 122-active layer; 123-second semiconductor layer; 13- Chip electrode; 131-first electrode; 132-second electrode; 14-optical material; 14a-red light conversion material; 14b-green light conversion material; 14c-light scattering material; 15-water-oxygen isolation layer; 20-LED Chip; 30-LED chip; 40-display panel; 41-drive substrate; 410-board electrode; 42-bonding material; 43-LED pixel unit; 44-substrate reflection layer; 50-display panel; 60-display panel; 81-substrate; 810-groove; 82-blue light epitaxial layer; 821-first semiconductor layer; 822-active layer; 823-second semiconductor layer ;83-chip electrode; 831-first electrode; 832-second electrode; 100-display panel; 101-glass drive substrate; 1010-board electrode;
  • Another solution is to grow a blue LED chip first, and then convert the blue light emitted by the blue LED chip by setting a light conversion layer to obtain red light and green light. For example, setting red quantum dots (QD, Quantum Dot) on the blue LED chip ) material to form a red light conversion layer, thereby obtaining red light sub-pixels, and setting a green light conversion layer formed of green quantum dot materials on a blue LED chip, thereby forming green light sub-pixels.
  • QD Quantum Dot
  • this solution also has some disadvantages. For example, when the light conversion material is placed on the blue LED chip, inkjet printing is usually used at present, but the distance between each sub-pixel is very close, which leads to light loss.
  • the conversion material easily crosses from the light-emitting surface of one blue LED chip to the light-emitting surface of an adjacent blue LED chip, causing mutual influence between adjacent sub-pixels and reducing the display effect of the display panel.
  • a black photoresist is used to form a barrier on the light-emitting surface of the blue LED chip, and the barrier is used to control the light conversion material.
  • the height of the barrier wall can only be 10um at most, which limits the thickness of the light conversion layer on the light-emitting surface of the blue LED chip, reducing the The color conversion rate is reduced, which restricts the display performance of the display panel.
  • This embodiment firstly provides an LED chip, please refer to a schematic structural diagram of the LED chip 10 shown in FIG. 1 : the LED chip 10 includes a substrate 11 , a blue light epitaxial layer 12 and a chip electrode 13 .
  • the material of the substrate 11 satisfies the conditions for the growth substrate of the blue light epitaxial layer 12 , so, in some examples of this embodiment, the blue light epitaxial layer 12 is grown directly using the substrate 11 as the growth substrate.
  • the substrate 11 may be any one of a sapphire substrate, a silicon substrate and a GaN substrate.
  • the blue light epitaxial layer 12 includes a first semiconductor layer 121, an active layer 122, and a second semiconductor layer 123, and the active layer 122 is interposed between the first semiconductor layer 121 and the second semiconductor layer 123.
  • the second The distances from the first semiconductor layer 121 , the active layer 122 and the second semiconductor layer 123 to the substrate 11 are sequentially increased, so the substrate 11 is located on the side of the blue epitaxial layer 12 where the first semiconductor layer 121 is located.
  • One of the first semiconductor layer 121 and the second semiconductor layer 123 is an N-type doped semiconductor layer, and the other is a P-type doped semiconductor layer, wherein the N-type doped doping source includes but is not limited to a silicon source , any one of boron source and germanium source; taking silicon source as an example, SiH 12 (monosilane), Si 2 H 6 (disilane), etc. can be selected as the doping source.
  • the doping source of P-type doping includes but not limited to at least one of magnesium source and zinc source. For example, when magnesium source is used as the doping source, Cp2Mg (dimagnesium) can be selected.
  • the blue epitaxial layer 12 is not limited to the three layers of the first semiconductor layer 121, the active layer 122 and the second semiconductor layer 123, and in some other examples, it may also include a buffer layer, an intrinsic layer, an electron blocking layer layer, ohmic contact layer and other layer structures.
  • the chip electrode 13 includes a first electrode 131 and a second electrode 132, wherein the first electrode 131 is electrically connected to the first semiconductor layer 121, and the second electrode 132 is electrically connected to the second semiconductor layer 123. It should be understood that this embodiment The so-called electrical connection in the example does not require the chip electrode 13 to be in direct contact with the corresponding semiconductor layer.
  • the second electrode 132 and the second semiconductor layer 123 may be electrically connected through a current spreading layer or an ohmic contact layer.
  • the substrate 11 has two opposite surfaces, one of which is in contact with the blue epitaxial layer 12 , and this surface of the substrate 11 is referred to as an "epitaxial carrying surface" in this embodiment.
  • a downwardly recessed groove 110 is provided on the other surface of the substrate 11 , and the notch of the groove 110 faces away from the epitaxial carrying surface.
  • the groove 110 can be used to accommodate optical materials.
  • the optical materials mentioned here include light conversion materials and light transmission materials.
  • the light conversion materials are divided into red light conversion materials and green light conversion materials.
  • the LED chip 10 If the groove 110 of the LED chip 10 contains a red light conversion material, the LED chip 10 can be used as a red light sub-pixel; if the groove 110 of the LED chip 10 is filled with a green light conversion material, the LED chip 10 can be used as a green light sub-pixel.
  • the light conversion material includes but not limited to at least one of phosphor powder and quantum dot material.
  • the light-transmitting material mainly ensures that the blue light emitted by the active layer 122 can pass through the substrate 11 and be emitted to the other side of the substrate 11 .
  • the light-transmitting material includes a light-scattering material for uniformly diffusing the blue light.
  • the groove 110 can be formed by etching the substrate 11, because the optical material contained therein is used to process the blue light emitted by the active layer 122, therefore, the position of the groove 110 is the same as that of the active layer in the blue light epitaxial layer 12.
  • the position of 122 is relative.
  • the size of the notch of the groove 110 may be slightly larger than the size of the bottom of the groove, for example, in some examples of this embodiment, the longitudinal section of the groove 110 is an inverted trapezoid.
  • the thickness of the substrate 11 will exceed 500um.
  • the thickness of the substrate 11 made of sapphire in this embodiment is 600um.
  • the substrate 11 is etched to form the groove 110 , the groove 110 can reach a greater depth, for example, in an example of this embodiment, the thickness of the substrate 11 is D, and the depth of the groove 110 is d:
  • d is 2/3 of D.
  • the depth of the groove 110 is about 400um.
  • the maximum thickness can reach 400um.
  • the groove 110 is used to accommodate the light conversion material in this embodiment, which can not only avoid the problem of the light conversion material crossing the border, but also make the thickness of the light conversion material Basically unlimited, significantly improving the light conversion efficiency.
  • the size of the notch of the groove 100 can be slightly larger than the size of the active layer 122 in the direction parallel to the substrate 11, so as to ensure that the optical material covers the light exit surface of the active layer 122, for example, in some examples of this embodiment Among them, assuming that the size of the first semiconductor layer 121 in the preset direction is L, wherein the preset direction can be the length direction or the width direction of the epitaxial bearing surface, then the size l of the notch of the groove 110 in the preset direction satisfies:
  • l is 2/3 of L.
  • the inner wall of the groove 110 is also provided with a reflective layer 111 inside the groove, please refer to a schematic structural diagram of another LED chip 20 shown in FIG. 2 :
  • a reflective layer 111 is arranged in the groove.
  • the reflective layer 111 is arranged along the inner wall of the groove 110. It has the ability to reflect light and can prevent the light in the groove 110 from flowing The sidewall of the groove 110 is emitted, and at the same time, external light can be prevented from entering the groove 110 from the sidewall of the groove 110 .
  • the reflective layer 111 in the groove may be a reflective layer made of metal, for example, in some examples of this embodiment, the reflective layer 111 in the groove includes but is not limited to silver, aluminum, copper, gold At least one of metals such as copper and gold, considering that the color of metals such as copper and gold is yellowish, which may affect the purity of light emitted through the groove 110, so in some examples, metals with silvery colors such as silver and aluminum can be selected.
  • a reflective layer in the trench is formed.
  • the LED chip itself may not have optical materials. As shown in FIG. material, for example, after the LED chip 10 is crystal-bonded to the driving substrate, optical material is filled in the groove 110 . In some other examples, the LED chip itself contains optical materials.
  • the groove 110 of the LED chip 30 contains optical materials 14 , such as quantum dot materials or light scattering materials. When the LED chips 30 include optical materials, there is no need to additionally arrange optical materials during the process of obtaining the LED chips and preparing the display panel.
  • the LED chip in order to protect the optical material 14 and avoid the deterioration of the optical material 14 due to water and oxygen erosion, the LED chip is also provided with a water-oxygen isolation layer.
  • the water-oxygen isolation layer 15 It is disposed on the side of the optical material 14 away from the groove bottom of the groove 110 , in other words, the water-oxygen isolation layer 15 is located on the side of the optical material 14 close to the notch of the groove 110 .
  • the water-oxygen isolation layer 15 can seal the optical material 14 together with the sidewall of the groove 110, preventing external water, oxygen, dust, etc. The possibility of deterioration due to the influence of water, oxygen, dust, etc.
  • the water-oxygen isolation layer 15 may include but not limited to at least one of SiO 2 (silicon oxide) and SiN x (silicon nitride).
  • the thickness of the optical material 14 in the groove 110 is smaller than the depth of the groove 110, so the side of the optical material 14 away from the bottom of the groove is not flush with the surface of the substrate 11, in this case
  • the water-oxygen isolation layer 15 can also function as a flat layer: a part of it is located in the groove 110 , the other part covers the surface of the substrate 11 , and the side of the water-oxygen isolation layer 15 away from the substrate 11 is flat.
  • the LED chip itself may not include the water-oxygen isolation layer 15, for example, the optical material 14 may be protected by other means during the process of manufacturing the display panel, or the process of preparing the display panel In addition, a water-oxygen isolation layer is provided.
  • LED chips provided in the embodiments of the present application are provided with grooves, such LED chips can also be referred to as "grooved LED chips" in some examples. Chips are distinguished.
  • the display panel 40 includes a driving substrate 41 , a bonding material 42 and a plurality of LED pixel units 43 .
  • Each LED pixel unit 43 includes red sub-pixels, green sub-pixels and blue sub-pixels, and these sub-pixels are formed by LED chips, therefore, the display panel 40 includes multiple LED chips. At least some of these LED chips can be LED chips with grooves provided in the preceding examples in this embodiment. For example, in some examples of this embodiment, the red sub-pixels are set in the grooves 110 provided in any of the foregoing examples.
  • the slotted LED chip with the red light conversion material 14a, the green sub-pixel and the blue sub-pixel can be implemented by common LED chips, for example, in one example, both the green sub-pixel and the blue sub-pixel include common blue LED chips, It’s just that a green light conversion layer is provided on the light emitting surface of the blue LED chip in the green sub-pixel; in another example, the green sub-pixel and the blue sub-pixel respectively include a green LED chip and a blue LED chip.
  • the green light sub-pixel is a grooved LED chip with the green light conversion material 14b disposed in the groove 110 provided in any of the above-mentioned examples, and both the red light sub-pixel and the blue light sub-pixel can pass through ordinary LED chips. chip implementation.
  • the red light conversion material 14a provided in the groove 110 of the LED chip can be the optical material that comes with the LED chip, or it can be Additional optical material;
  • the green light conversion material 14b set in the groove 110 of the LED chip can be the optical material that comes with the LED chip , can also be an additional set of optical materials.
  • the LED pixel unit also includes blue light sub-pixels, the blue light sub-pixels can be formed by blue LED chips, and the blue light LED chips forming the blue light sub-pixels can be ordinary blue light LED chips, for example, a blue light LED without a substrate and without grooves
  • the chip can also be the grooved LED chip with the groove 110 provided in any of the foregoing examples, for example, please continue to refer to FIG. 4 .
  • the LED chip corresponding to the blue light sub-pixel is provided with a substrate 11, and a groove 110 with a notch facing away from the blue light epitaxial layer 12 is formed on the substrate 11, and a light scattering material 14c is arranged in the groove 110.
  • other light-transmitting materials are disposed in the groove 110 .
  • a driving circuit is disposed on the driving substrate 41 , and the driving circuit can be disposed on the surface of the driving substrate 41 or inside the driving substrate 41 .
  • One of the two surfaces of the driving substrate 41 is used for disposing LED pixel units, and this surface is referred to as a "chip carrying surface" herein.
  • a plurality of on-board electrodes 410 are arranged on the chip carrying surface. On the one hand, the on-board electrodes 410 are electrically connected to the drive circuit, and on the other hand, they are used to bond with the chip electrodes 13 of the LED chip through the bonding material 42 to realize the connection with the LED pixel. electrical connection of the unit.
  • the bonding material 42 has conductivity, and it can be solder or conductive glue.
  • it is selected to include but not limited to at least one of gold-tin alloy, indium, and indium tin oxide. Solder is used as the bonding material 42 .
  • at least one of conductive adhesives such as conductive silver adhesive and ACF (Anisotropic Conductive Film, anisotropic conductive adhesive) can be selected as the bonding material 42 .
  • the driving substrate 41 can be a transparent substrate, such as a glass substrate, a sapphire substrate, etc., or a non-transparent substrate, such as an FPC (Flexible Printed Circuit, flexible circuit board) or a common PCB (Printed Circuit Board, printed circuit board).
  • the driving substrate 41 is a transparent substrate.
  • the display panel is also provided with a substrate reflective layer. Please refer to FIG. 5.
  • the substrate reflective layer 44 is disposed on the side of the drive substrate 41 away from the LED pixel unit 43, and the substrate reflective layer 44 can reflect light from the LED chip.
  • the substrate reflection layer 44 may be a metal reflection layer, which may also be formed by at least one metal including but not limited to silver, aluminum, copper, gold and the like. In some other examples, in order to transmit the surface light from the driving substrate 41 , it may also be considered to coat the chip carrying surface of the driving substrate 41 with a reflective material.
  • the display panel 60 includes a first encapsulation layer 45, which is disposed on the side of the driving substrate 41 where the LED chips are disposed, and is located between adjacent LED chips. in the gap.
  • the first encapsulation layer 45 has a function of blocking light.
  • the first encapsulation layer 45 may be formed by black glue, and the material includes but not limited to at least one of epoxy resin and silicone resin.
  • the purpose of setting the first encapsulation layer in the display panel 60 is mainly to prevent color crossover between adjacent LED chips, and avoid affecting the light emitting effect of adjacent LED chips when one LED chip is lit.
  • the distance between the side of the first encapsulation layer 45 away from the drive substrate 41 and the drive substrate 41 (also can be understood as the maximum distance between the first encapsulation layer 45 and the chip-carrying surface of the drive substrate 41 ) is greater than that of the blue light epitaxy
  • the distance between the active layer 122 of the layer 12 and the side away from the driving substrate 41 and the driving substrate 41 (also can be understood as the maximum distance between the active layer 122 and the chip-carrying surface of the driving substrate 41 ).
  • the upper surface of the first encapsulation layer 45 is higher than the upper surface of the active layer 122 . In some examples of this embodiment, as shown in FIG.
  • the side of the first packaging layer 45 away from the driving substrate 41 is flush with the side of the blue epitaxial layer 12 away from the driving substrate 41 , that is, the upper surface of the first packaging layer 45 It is flush with the upper surface of the blue epitaxial layer 12 .
  • the side of the first packaging layer 45 away from the driving substrate 41 is flush with the side of the substrate 11 away from the driving substrate 41 , that is, the upper surface of the first packaging layer 45 is flush with the upper surface of the substrate 11 .
  • the first encapsulation layer 45 can not only prevent adjacent sub-pixels from cross-coloring, but also protect the LED chip to a certain extent, because the first encapsulation layer 45 encloses the LED chip in the middle and fills the corresponding
  • the gap between adjacent LED chips can prevent the probability of the electrical connection between the LED chip and the driving substrate 41 being damaged due to stress when the display panel encounters a collision, and can reduce or even prevent the LED chip from shifting and falling off from the driving substrate 41. question.
  • the display panel 60 further includes a second encapsulation layer 46, the second encapsulation layer 46 is arranged on the side of the first encapsulation layer 45 away from the driving substrate 41, so that the driving substrate 41 is underneath, and the LED pixel unit 43 in the upper direction, the second encapsulation layer 46 is disposed on the upper surface of the first encapsulation layer 45 .
  • the distance between the side of the second packaging layer 46 away from the driving substrate 41 and the driving substrate 41 is greater than the distance between the side of the LED chip far away from the driving substrate 41 and the driving substrate, that is, The upper surface of the second encapsulation layer 46 is higher than the upper surface of the LED chips.
  • the second encapsulation layer 46 should have light transmission ability because it will cover the light-emitting surface of the LED chip.
  • the second encapsulation layer 46 can For transparent material.
  • the light transmittance of the second encapsulation layer 46 is greater than 60% and less than 90%, that is, the second encapsulation layer 46 is not completely transparent, which can prevent the second encapsulation layer 46 from reflecting ambient light, and is conducive to improving the performance of the display panel 60. display effect.
  • the second encapsulation layer 46 is formed by semi-permeable glue with a light transmittance of about 70%, and the specific material may be epoxy resin or silicone resin.
  • the second encapsulation layer 46 is mainly used to protect the LED pixel unit 43, and the protection function of the second encapsulation layer 46 can be divided into two aspects: on the one hand, the second encapsulation layer 46 wraps the LED chip inside, which can reduce the The impact of external force can damage the LED chip; on the other hand, the second encapsulation layer 46 isolates the external water, oxygen and dust, which improves the reliability of the LED chip and enhances the quality of the display panel 60 . In addition to the protection function, the second encapsulation layer 46 can also function to flatten the surface of the display panel 60 .
  • first encapsulation layer 45 and the second encapsulation layer 46 are provided in the display panel 60 in FIG. Two encapsulation layers 46 . If the water-oxygen isolation layer 15 is not included in the LED chip, the second encapsulation layer 46 is generally provided in the display panel 60 .
  • This embodiment also provides an electronic device, which includes a processor and the display panel provided in any of the preceding examples, the processor is connected to the drive substrate 41 in the display panel in communication, and the processor can control the display of the display panel. Take control.
  • the electronic device may be a mobile phone, a tablet computer, a notebook computer, a palm computer, a personal digital assistant (PDA) including a display panel.
  • PDA personal digital assistant
  • Digital Assistant, PDA portable media player
  • PMP portable media player
  • navigation device wearable device, smart bracelet, pedometer and other mobile terminals
  • wearable device wearable device
  • smart bracelet smart bracelet
  • pedometer pedometer
  • Fixed terminal Fixed terminal.
  • the electronic device may also include RF (Radio Frequency, radio frequency) unit, WiFi module, audio output unit, sensor, interface unit, memory and other components.
  • RF Radio Frequency, radio frequency
  • the LED chip is provided with a groove for accommodating the optical material in the substrate, the problem that the light conversion material crosses the boundary when the light conversion material is arranged can be avoided.
  • the depth of the groove is only affected by the thickness of the substrate, and the substrate is generally thicker, the thickness of the light conversion material in the LED chip is almost unlimited, and a larger thickness can be achieved, which is conducive to improving the LED performance.
  • the light conversion efficiency of the chip is improved, thereby enhancing the display effect of the display panel.
  • the substrate in the LED chip is the growth substrate of the blue light epitaxial layer, during the preparation of the LED chip, it is not necessary to peel off the growth substrate and set up another substrate, which is conducive to reducing the preparation cost of the LED chip and improving the quality of the LED chip. production efficiency.
  • This embodiment provides a LED chip preparation method, the LED chip preparation method is used to prepare the grooved LED chip provided in the previous embodiment, please refer to a schematic flow chart of the LED chip preparation method shown in Figure 7, and Figure 8 shows a schematic diagram of a process state change of the LED chip preparation method:
  • the substrate 81 is used as the growth substrate of the blue light epitaxial layer 82, which can be a sapphire substrate, a silicon substrate or a GaN substrate. any of the bottoms.
  • the blue light epitaxial layer 82 includes at least a first semiconductor layer 821 , an active layer 822 and a second semiconductor layer 823 .
  • first semiconductor layer 821 an active layer 822 and a second semiconductor layer 823 .
  • the blue light epitaxial layer 82 When growing the blue light epitaxial layer 82, it is grown in the order of the first semiconductor layer 821, the active layer 822, and the second semiconductor layer 823, so the first semiconductor layer 821 in the grown blue light epitaxial layer 82 is closer to the active layer 822.
  • the substrate 81 is shown in (b) of FIG. 8 .
  • the chip electrode 83 can be set in the electrode setting area of the blue light epitaxial layer 82. Usually, when the chip electrode 83 is set, the blue light epitaxial layer 82 needs to be etched first, so that all the electrode setting areas are exposed. .
  • the provided chip electrode 83 includes a first electrode 831 electrically connected to the first semiconductor layer 821 and a second electrode 832 electrically connected to the second semiconductor layer 823 , as shown in (c) of FIG. 8 .
  • S706 Forming a groove in the substrate with the notch facing away from the blue epitaxial layer and opposite to the active layer.
  • a groove 810 with a notch facing away from the blue epitaxial layer 82 can be formed in the substrate 81, and the position of the groove 810 is opposite to the position of the active layer 822 in the blue epitaxial layer 82, as shown in FIG. (d) in 8.
  • the groove 810 can be formed by etching the substrate 81, and the size of the notch of the groove 810 can be slightly larger than the size of the bottom of the groove.
  • the longitudinal section of the groove 810 is an inverted trapezoid.
  • the thickness D of the substrate 81 and the depth d of the groove 810 satisfy a relationship of 5D/6 ⁇ d ⁇ D/2, and in one example, d is 2/3 of D.
  • the dimension L of the first semiconductor layer 821 in the predetermined direction (the length direction or the width direction of the substrate 81 ) and the dimension l of the notch of the groove 810 in the predetermined direction satisfy 5L/ 6 ⁇ l ⁇ L/2 relationship, in one example, l is 2/3 of L.
  • an inner groove may also be formed on the inner sidewall of the groove 810 .
  • the reflective layer is used to prevent the light in the groove 810 from exiting from the sidewall of the groove 810 by using the reflective layer in the groove.
  • optical materials can also be placed in the groove, for example, light conversion materials (such as quantum dot materials, phosphor materials, etc.), light transmission materials (light scattering Material).
  • light conversion materials such as quantum dot materials, phosphor materials, etc.
  • light transmission materials light scattering Material
  • a water-oxygen isolation layer may also be disposed on the optical material, so as to protect the optical material in the groove 810 by using the water-oxygen isolation layer.
  • the groove 810 may also be formed on the substrate 81 first, and then the blue epitaxial layer 82 is grown on the other surface of the substrate 81; or, in some In an example, the blue light epitaxial layer 82 may be grown on the substrate 81 first, then the groove 810 is formed on the substrate 81 , and then the chip electrode 83 is disposed.
  • This embodiment also provides a method for manufacturing a display panel, please refer to a schematic flow chart of the method for manufacturing a display panel shown in FIG. 9 :
  • the LED chip manufactured by the LED chip preparation method includes a substrate and a groove disposed on the substrate, but no optical material is disposed in the groove.
  • the groove of the LED chip includes a reflective layer in the groove.
  • S904 Transfer the LED chip with the groove to the driving substrate, and bond the electrode of the chip and the electrode on the plate on the driving substrate through a bonding material.
  • the LED chip since the LED chip does not have its own light conversion material or light transmission material, the LED chips corresponding to the red sub-pixels, green sub-pixels and blue sub-pixels have a basic structure before being transferred to the driving substrate. Similarly, the transfer equipment can transfer these LED chips indiscriminately.
  • a bonding material may be provided on the on-board electrode of the driving substrate first, then the chip electrode of the LED chip is aligned with the on-board electrode, and then the chip electrode is bonded to the on-board electrode by using the bonding material.
  • the bonding material can also be provided on the chip electrodes of the LED chip first.
  • S906 Disposing an optical material in the groove.
  • red light conversion materials and green light conversion materials can be placed in the grooves of some LED chips as required.
  • light projection materials can be filled in the grooves, or not in this part.
  • the groove of the LED chip is filled with any substance.
  • a plurality of adjacent LED chips form an LED pixel unit, and the LED pixel unit includes red sub-pixels, green sub-pixels and blue sub-pixels, wherein the LED chip forming the red sub-pixel
  • the grooves of the LED chips forming green sub-pixels are filled with red light conversion materials, such as red quantum dot materials; the grooves of LED chips forming green sub-pixels are filled with green light conversion materials, such as green quantum dot materials;
  • the slots are filled with light scattering material.
  • a water-oxygen isolation layer may also be disposed at the notch of the groove, and the optical material is protected by the water-oxygen isolation layer.
  • a light-shielding first encapsulation layer can also be provided between the LED chips, for example, black glue is used to form the first encapsulation layer, the first encapsulation layer is filled in the gap between the LED chips, and The surface is not lower than the upper surface of the active layer of the LED chip, and generally the upper surface of the first encapsulation layer is not higher than the upper surface of the blue light epitaxial layer. In an example of this embodiment, the upper surface of the first encapsulation layer is flush with the upper surface of the blue epitaxial layer.
  • a second encapsulation layer may also be formed on the first encapsulation layer.
  • the second encapsulation layer is a light-transmitting layer.
  • the second encapsulation layer is translucent, and its light transmittance is between 60%-90%, for example, 70%.
  • the display panel manufacturing method provided in this embodiment, after the blue light epitaxial layer is grown, there is no need to peel off the growth substrate, but a notch is directly formed in the growth substrate to accommodate the optical material, so that when the light conversion material is arranged, it can be used
  • the groove accommodates the light-converting material, so as to avoid the problem of the light-converting material crossing the boundary, which is beneficial to improving the purity of the light emitted by the LED chip and enhancing the display effect based on the display panel.
  • the groove is set on the substrate, and its depth is only related to the thickness of the substrate and is not limited by other restrictions. This is conducive to setting the thickness of the light conversion material according to needs, improving the absorption and conversion rate of blue light, and further enhancing the display panel. display effect.
  • the growth substrate can be directly formed with grooves without peeling off the growth substrate, which simplifies the preparation process of the LED chip, is conducive to improving production efficiency and reducing production cost.
  • the display panel 100 includes a glass driving substrate 101 , a substrate reflection layer 102 , a bonding material 103 , LED pixel units, and an encapsulation layer.
  • the LED pixel unit includes red pixels, green pixels and blue pixels, and the pixels of these three colors are formed by the LED chips 104 with grooves.
  • the LED chip 104 includes but is not limited to Micro-LED (micro-LED), Mini-LED (mini-LED), or OLED (Organic Light-Emitting Diode, organic light-emitting diode).
  • the LED chip 104 includes a sapphire substrate 1041 , a blue epitaxial layer 1042 and a chip electrode 1043 , wherein the sapphire substrate 1041 is a growth substrate of the blue epitaxial layer 1042 .
  • the blue light epitaxial layer 1042 includes the first semiconductor layer, the active layer and the second semiconductor layer, and the distance between the three and the sapphire substrate 1041 increases gradually.
  • the blue light epitaxial layer of this embodiment may further include an ohmic contact layer, a current spreading layer, and the like.
  • the light emitted by the active layer is blue light, for example, its wavelength can be 458nm.
  • the first semiconductor layer in the blue light epitaxial layer 1042 is electrically connected to the first electrode in the chip electrodes 1043
  • the second semiconductor layer is electrically connected to the second electrode in the chip electrodes 1043 .
  • the other surface of the sapphire substrate 1041 facing the blue epitaxial layer 1042 is etched to form a groove 10410.
  • the notch of the groove 10410 faces away from the blue epitaxial layer 1042, and the size of the notch is slightly larger than the bottom of the groove.
  • the overall cross-sectional shape of the groove 10410 is an inverted trapezoid, therefore, the three-dimensional structure of the groove 10410 can be in the shape of an inverted circular truncated cone or a truncated prism.
  • the thickness of the sapphire substrate 1041 is about 600um
  • the depth of the groove 10410 is 2/3 of the thickness of the sapphire substrate 1041, therefore, the depth of the groove 10410 is about 400um.
  • the size of the notch of the groove 10410 along the length direction of the sapphire substrate 1041 is 2/3 of the size of the first semiconductor layer along the length direction of the sapphire substrate 1041, and the size of the notch of the groove 10410 along the width direction of the sapphire substrate 1041 is also It is also 2/3 of the size of the first semiconductor layer along the width direction of the sapphire substrate 1041 .
  • An internal reflection layer 10411 is disposed on the inner sidewall of the groove 10410, and in this embodiment, the internal reflection layer includes at least one of silver and aluminum.
  • the reflective layer 10411 in the groove can prevent light in the groove 10410 from exiting from the sidewall of the groove 10410 , and can also prevent external light from entering from the sidewall of the groove 10410 .
  • optical materials are arranged in the groove 10410, and red quantum dot material 10441, green quantum dot material 10442 and light scattering material 10443 are respectively arranged in the groove 10410 of three LED chips corresponding to one LED pixel unit.
  • the thickness of the optical material in the groove 10410 is slightly smaller than the depth of the groove 10410, but because the groove 10410 is deep enough, the light conversion layers formed by the red quantum dot material 10441 and the green quantum dot material 10442 can also provide sufficient light conversion ability To convert the blue light emitted by the active layer.
  • the optical material arranged in the groove 10410 may be provided by the LED chip 104 itself, or may be provided separately when the display panel 100 is manufactured.
  • a water-oxygen isolation layer 1045 is also provided at the notch of the groove 10410. Part of the water-oxygen isolation layer 1045 fills the groove 10410, and the other part covers the upper surface of the substrate 1041.
  • the upper surface of the water-oxygen isolation layer 1045 is flat.
  • the water-oxygen isolation layer 1045 may include at least one of silicon oxide and silicon nitride.
  • the water-oxygen isolation layer 1045 can not only play the role of a flat layer, but more importantly, it can isolate the optical material in the groove together with the bottom wall and side wall of the groove 10410, avoiding the contact between the optical material and the outside world, and realizing the Water and oxygen protection of optical materials.
  • a driving circuit is arranged in the glass driving substrate 101, and a plurality of on-board electrodes 1010 electrically connected to the driving circuit are arranged on the chip-carrying surface thereof.
  • the bonding material 103 in this embodiment may be solder materials such as gold-tin alloy, indium, and indium tin oxide.
  • the bonding material 103 may be conductive glue such as conductive silver glue and ACF.
  • the substrate reflective layer 102 is disposed on the other surface of the glass driving substrate 101 opposite to the chip carrying surface, which can be made of metal such as aluminum, silver or silver-aluminum alloy.
  • the substrate reflective layer 102 can reflect the light emitted by the LED chip 104 to the back of the glass driving substrate 101 to the front of the glass driving substrate 101 to improve the light efficiency of the display panel.
  • the encapsulation layer includes a first encapsulation layer 105 and a second encapsulation layer 106, wherein the first encapsulation layer 105 is a light-shielding encapsulation layer, which can be made of pure black glue, and the material can be epoxy resin or silicone resin.
  • the first encapsulation layer 105 is filled in the gap between the LED chips 104 , and its upper surface is flush with the upper surface of the blue epitaxial layer 1042 .
  • the lower surface of the second encapsulation layer 106 is attached to the upper surface of the first encapsulation layer 105, and it covers the light-emitting surface of the LED chip 104.
  • the upper surface of the second encapsulation layer 106 is higher than that of the sapphire substrate 1041. upper surface.
  • the second encapsulation layer 106 is a light-transmitting encapsulation layer, and its light transmittance is 70%, which can ensure the light transmission of the sub-pixels, and at the same time prevent the second encapsulation layer 106 from forming a specular reflection of ambient light and thus affecting the display panel display. The question of effect.
  • the display panel and LED chips provided in this embodiment, by making grooves on the sapphire substrate of the LED chips, and filling the grooves with quantum dot materials, realize full color by using blue LED chips, and avoid quantum dots.
  • the transgression of materials also breaks the limitation of the thickness of quantum dot materials, which doubles the absorption efficiency and conversion efficiency of quantum dot materials for blue light.
  • the reflective layer in the groove and the first encapsulation layer by setting the reflective layer in the groove and the first encapsulation layer, the problem of color crossing between sub-pixels is avoided, and at the same time, the reflective layer in the groove and the reflective layer of the substrate further improve the light efficiency of the display panel.
  • the transfer is all blue LED chips, which can improve the efficiency and yield of mass transfer.

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Abstract

本申请涉及一种LED芯片、显示面板及制备方法、电子设备。其中，LED芯片（10）包括衬底（11）、蓝光外延层（12）以及芯片电极（13）；芯片电极（13）包括分别与蓝光外延层（12）中第一半导体层（121）、第二半导体层（123）电连接的第一电极（131）、第二电极（132）；衬底（11）能够作为蓝光外延层（12）的生长基板，衬底（11）上与外延承载面相对的另一表面设置有凹槽（110），凹槽（110）的位置与有源层（122）的位置相对，且其被配置为容纳光学材料（14）。

Description

LED芯片、显示面板及制备方法、电子设备 技术领域
本申请涉及显示领域，尤其涉及一种LED芯片、显示面板及制备方法、电子设备。
 背景技术
目前以LED作为像素单元的显示面板已经投入应用，这种显示面板中包括红光子像素R、绿光子像素G和蓝光子像素B。在一些显示方案中红光子像素R与绿光子像素G均是通过蓝光LED芯片形成的：通常是在蓝光LED芯片的发光面上以喷墨打印等方式设置光转换材料，利用光转换材料将蓝光LED芯片发出的蓝光转换为红光或绿光，不过，这样设置的光转换材料非常容易越界到相邻子像素的范围中，从而影响显示面板的显示效果。
因此，如何避免光转换材料越界，提升显示面板的显示效果是亟需解决的问题。
 技术问题
鉴于上述相关技术的不足，本申请的目的在于提供一种LED芯片、显示面板及制备方法、电子设备，旨在解决目前显示面板中光转换材料越界而导致的显示面板显示效果不佳的问题。
 技术解决方案
本申请提供一种LED芯片，包括：
衬底；
设置于衬底的外延承载面上的蓝光外延层；
以及芯片电极；
蓝光外延层包括第一半导体层、有源层、第二半导体层，且三者与衬底的距离依次变大；芯片电极包括分别与第一半导体层、第二半导体层电连接的第一电极、第二电极；衬底能够作为蓝光外延层的生长基板，衬底上与外延承载面相对的另一表面设置有凹槽；凹槽的位置与有源层的位置相对，且其被配置为容纳光学材料。
上述LED芯片中，因为在衬底中设置有槽口背向蓝光外延层的凹槽，该凹槽的位置与蓝光外延层中的有源层相对，所以设置光转换材料时，可以利用该凹槽来容纳光转换材料，避免了光转换材料越界的问题，提升了LED芯片出光的纯净度，有利于增强基于该LED芯片的显示面板的显示效果。而且凹槽设置在衬底上，其深度仅与衬底的厚度相关，不受其他限制，这样有利于根据需要设置光转换材料的厚度，提升了对蓝光的吸收转换率，进一步增强了显示面板的显示效果。
基于同样的发明构思，本申请还提供一种显示面板，包括：
驱动基板；
键合材料；
以及多个LED像素单元；
LED像素单元中包括红光子像素与绿光子像素中至少一个所包含的发光元件为带槽LED芯片，带槽LED芯片包括衬底、设置于衬底的外延承载面上的蓝光外延层以及芯片电极；蓝光外延层包括第一半导体层、有源层、第二半导体层，且三者与衬底的距离依次变大；芯片电极包括分别与第一半导体层、第二半导体层电连接的第一电极、第二电极；衬底能够作为蓝光外延层的生长基板，衬底上与外延承载面相对的另一表面设置有凹槽；凹槽的位置与有源层的位置相对，且其被配置为容纳光学材料；带槽LED芯片的芯片电极通过键合材料同驱动基板上的板上电极键合。
上述显示面板中红光子像素与绿光子像素中的至少一个通过带槽LED芯片形成，因为带槽LED芯片的衬底中设置有槽口背向蓝光外延层的凹槽，该凹槽的位置与蓝光外延层中的有源层相对，所以设置光转换材料时，可以利用该凹槽来容纳光转换材料，避免了光转换材料越界的问题，提升了LED芯片出光的纯净度，有利于增强基于显示面板的显示效果。而且凹槽设置在衬底上，其深度仅与衬底的厚度相关，不受其他限制，这样有利于根据需要设置光转换材料的厚度，提升了对蓝光的吸收转换率，进一步增强了显示面板的显示效果。
基于同样的发明构思，本申请还提供一种电子设备，该电子设备中包括处理器与显示面板，处理器与显示面板通信连接；显示面板包括：
驱动基板；
键合材料；
以及多个LED像素单元；
LED像素单元中包括红光子像素、绿光子像素与蓝光子像素，红光子像素与绿光子像素中至少一个所包含的发光元件为带槽LED芯片，带槽LED芯片包括衬底、设置于衬底的外延承载面上的蓝光外延层以及芯片电极；蓝光外延层包括第一半导体层、有源层、第二半导体层，且三者与衬底的距离依次变大；芯片电极包括分别与第一半导体层、第二半导体层电连接的第一电极、第二电极；衬底能够作为蓝光外延层的生长基板，衬底上与外延承载面相对的另一表面设置有凹槽；凹槽的位置与有源层的位置相对，且其被配置为容纳光学材料；带槽LED芯片的芯片电极通过键合材料同驱动基板上的板上电极键合。
基于同样的发明构思，本申请还提供一种LED芯片制备方法，包括：
在衬底上生长蓝光外延层，蓝光外延层包括第一半导体层、有源层、第二半导体层，且三者与衬底的距离依次变大；
设置芯片电极，电极包括分别与第一半导体层、第二半导体层电连接的第一电极、第二电极；
在衬底中形成槽口背向蓝光外延层，且位置与有源层的位置相对的凹槽，凹槽被配置为容纳光学材料。
基于同样的发明构思，本申请还提供一种显示面板制备方法，包括：
在衬底上生长蓝光外延层，蓝光外延层包括第一半导体层、有源层、第二半导体层，且三者与衬底的距离依次变大；
设置芯片电极，电极包括分别与第一半导体层、第二半导体层电连接的第一电极、第二电极；
在衬底中形成槽口背向蓝光外延层，且位置与有源层的位置相对的凹槽，以形成带槽LED芯片，凹槽被配置为容纳光学材料；
将带槽LED芯片转移至驱动基板，并通过键合材料键合芯片电极与驱动基板上的板上电极；
在凹槽内设置光学材料。
 有益效果
上述电子设备中，因为显示面板里的红光子像素与绿光子像素中的至少一种通过前述发蓝光的LED芯片形成，因为LED芯片的衬底中设置有槽口背向蓝光外延层的凹槽，该凹槽的位置与蓝光外延层中的有源层相对，所以设置光转换材料时，可以利用该凹槽来容纳光转换材料，避免了光转换材料越界的问题，提升了LED芯片出光的纯净度，有利于增强基于显示面板的显示效果。而且凹槽设置在衬底上，其深度仅与衬底的厚度相关，不受其他限制，这样有利于根据需要设置光转换材料的厚度，提升了对蓝光的吸收转换率，进一步增强了显示面板的显示效果。
上述LED芯片制备方法中，在生长蓝光外延层之后，无须剥离生长衬底，而直接在该生长衬底中形成槽口背向蓝光外延层，且位置与蓝光外延层中的有源层相对的凹槽来容纳光学材料，这样在设置光转换材料时，可以利用该凹槽来容纳光转换材料，从而避免光转换材料越界的问题，有利于提升LED芯片出光的纯净度，增强基于该LED芯片的显示面板的显示效果。而且凹槽设置在衬底上，其深度仅与衬底的厚度相关，不受其他限制，这样有利于根据需要设置光转换材料的厚度，提升了对蓝光的吸收转换率，进一步增强了显示面板的显示效果。同时，因为制备LED芯片的过程中，可以不用剥离生长衬底，而直接在生长衬底上形成凹槽，简化了LED芯片的制备工艺，有利于提升生产效率，降低生产成本。
上述显示面板制备方法中，在生长蓝光外延层之后，无须剥离生长衬底，而直接在该生长衬底中形成槽口背向蓝光外延层，且位置与蓝光外延层中的有源层相对的凹槽来容纳光学材料，这样在设置光转换材料时，可以利用该凹槽来容纳光转换材料，从而避免光转换材料越界的问题，有利于提升LED芯片出光的纯净度，增强基于显示面板的显示效果。而且凹槽设置在衬底上，其深度仅与衬底的厚度相关，不受其他限制，这样有利于根据需要设置光转换材料的厚度，提升了对蓝光的吸收转换率，进一步增强了显示面板的显示效果。同时，因为制备LED芯片的过程中，可以不用剥离生长衬底，而直接在生长衬底上形成凹槽，简化了LED芯片的制备工艺，有利于提升生产效率，降低生产成本。
 附图说明
图1为本申请一可选实施例中提供的LED芯片的一种结构示意图；
图2为本申请一可选实施例中提供的LED芯片的另一种结构示意图；
图3为本申请一可选实施例中提供的LED芯片的又一种结构示意图；
图4为本申请一可选实施例中提供的显示面板的一种结构示意图；
图5为本申请一可选实施例中提供的显示面板的另一种结构示意图；
图6为本申请一可选实施例中提供的显示面板的又一种结构示意图；
图7为本申请另一可选实施例中提供的LED芯片制备方法的一种流程示意图；
图8为本申请另一可选实施例中提供的LED芯片制备方法的一种制程状态变化示意图；
图9为本申请另一可选实施例中提供的显示面板制备方法的一种流程示意图；
图10为本申请又一可选实施例中提供的显示面板的一种结构示意图。
附图标记说明：
10-LED芯片；11-衬底；110-凹槽；111-槽内反射层；12-蓝光外延层；121-第一半导体层；122-有源层；123-第二半导体层；13-芯片电极；131-第一电极；132-第二电极；14-光学材料；14a-红光转换材料；14b-绿光转换材料；14c-光散射材料；15-水氧隔离层；20-LED芯片；30-LED芯片；40-显示面板；41-驱动基板；410-板上电极；42-键合材料；43-LED像素单元；44-基板反射层；45-第一封装层；46-第二封装层；50-显示面板；60-显示面板；81-衬底；810-凹槽；82-蓝光外延层；821-第一半导体层；822-有源层；823-第二半导体层；83-芯片电极；831-第一电极；832-第二电极；100-显示面板；101-玻璃驱动基板；1010-板上电极；102-基板反射层；103-键合材料；104-LED芯片；1041-蓝宝石衬底；10410-凹槽；10411-槽内反射层；1042-蓝光外延层；1043-芯片电极；10441-红色量子点材料；10442-绿色量子点材料；10443-光散射材料；1045-水氧隔离层；105-第一封装层；106-第二封装层。
 本发明的实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施方式。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施方式。相反地，提供这些实施方式的目的是使对本申请的公开内容理解的更加透彻全面。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施方式的目的，不是旨在于限制本申请。
目前以LED作为像素单元实现全彩显示的方案主要包括两种：
一种方案是直接生长红光LED芯片、绿光LED芯片与蓝光LED芯片，然后通过巨量转移等方式将红、绿、蓝三色的LED芯片转移到驱动背板上，不过这种方案存在两方面的问题，一是红光LED芯片发光效率低，导致显示面板整体亮度偏度；二是因为红光外延层是GaAs（砷化镓）材质，而蓝光外延层与绿光外延层均是GaN（氮化镓）材质，材质的差异导致三种LED芯片在巨量转移时转移良率不高。
另一种方案是先生长蓝光LED芯片，然后通过设置光转换层对蓝光LED芯片所发出的蓝光进行转换得到红光与绿光，例如，在蓝光LED芯片上设置红色量子点（QD，Quantum Dot）材料形成的红光转换层，从而得到红光子像素，在蓝光LED芯片上设置绿色量子点材料形成的绿光转换层，从而形成绿光子像素。不过，这种方案也存在一些弊端，例如，在蓝光LED芯片上设置光转换材料的时候，目前通常采用喷墨打印的方式进行，但各个子像素之间的距离又非常近，这就导致光转换材料容易从一颗蓝光LED芯片的发光面上越界到相邻蓝光LED芯片的发光面上，导致相邻子像素之间相互影响，降低了显示面板的显示效果。虽然一些情景中为了限定光转换层的设置范围，同时也为了避免相邻子像素串色，会先利用黑色光阻在蓝光LED芯片的发光面上形成挡墙，利用挡墙对光转换材料的涂布、打印范围进行限定，但在保证相邻子像素间不串色的前提下挡墙的高度最多只能做到10um，这就限制了蓝光LED芯片发光面上光转换层的厚度，降低了色彩转换率，制约了显示面板的显示性能。
基于此，本申请希望提供一种能够解决上述技术问题的方案，其详细内容将在后续实施例中得以阐述。
本申请一可选实施例：
本实施例首先提供一种LED芯片，请参见图1示出的该LED芯片10的一种结构示意图：LED芯片10包括衬底11、蓝光外延层12以及芯片电极13。
其中，衬底11的材质满足作为蓝光外延层12生长衬底的条件，所以，在本实施例的一些示例中，蓝光外延层12就是直接以衬底11作为生长衬底生长出来的。在本实施例的一些示例中，衬底11可以为蓝宝石衬底、硅衬底以及GaN衬底中的任意一种。
蓝光外延层12中包括第一半导体层121、有源层122以及第二半导体层123，有源层122介于第一半导体层121与第二半导体层123之间，在本实施例中，第一半导体层121、有源层122以及第二半导体层123距离衬底11的距离依次变大，因此衬底11位于蓝光外延层12中第一半导体层121所在的一侧。第一半导体层121与第二半导体层123中的一个为N型掺杂的半导体层，另一个为P型掺杂的半导体层，其中，N型掺杂的掺杂源包括但不限于硅源、硼源与锗源中的任意一种；以硅源为例，可以选用SiH 12（甲硅烷）、Si 2H 6（乙硅烷）等作为掺杂源。P型掺杂的掺杂源包括但不限于镁源、锌源中的至少一种，例如以镁源作为掺杂源时，可以选用Cp2Mg（二茂镁）。应当明白的是，蓝光外延层12并不仅限于第一半导体层121、有源层122与第二半导体层123三层，在其他一些示例中，其还可以包括缓冲层、本征层、电子阻挡层、欧姆接触层等层结构中的至少一种。
芯片电极13中包括第一电极131与第二电极132，其中，第一电极131与第一半导体层121电连接，第二电极132与第二半导体层123电连接，应当明白的是，本实施例中所谓的电连接并要求芯片电极13与对应的半导体层直接接触，例如，在一些示例中，第二电极132与第二半导体层123之间可以通过电流扩展层或欧姆接触层电连接。
衬底11具有两个相对的表面，其中一个与蓝光外延层12接触，本实施例中将衬底11的该表面称为“外延承载面”。在衬底11的另一个表面中设置有向下凹陷的凹槽110，凹槽110的槽口背向外延承载面。凹槽110可用于容纳光学材料，这里所说的光学材料包括光转换材料与光透射材料，其中光转换材料分为红光转换材料与绿光转换材料，毫无疑义的是，如果LED芯片10的凹槽110中容纳的是红光转换材料，则LED芯片10可以作为红光子像素，如果LED芯片10的凹槽110中容纳的是绿光转换材料，则LED芯片10可以作为绿光子像素。光转换材料包括但不限于荧光粉与量子点材料中的至少一种。光透射材料主要保证有源层122发出的蓝光可以透过衬底11射到衬底11的另一面去。在本实施例的一些示例中，光透射材料包括光散射材料，用于对蓝光进行均匀扩散。
凹槽110可以通过对衬底11进行刻蚀形成，因为其中容纳的光学材料用于对有源层122所发出的蓝光进行处理，因此，凹槽110的位置与蓝光外延层12中有源层122的位置相对。凹槽110的槽口的尺寸可以略大于槽底的尺寸，例如，在本实施例的一些示例中，凹槽110的纵剖面呈倒梯形。通常情况下，衬底11的厚度会超过500um，例如，在本实施例的一种示例蓝宝石材质的衬底11厚度为600um，在这种情况下，对衬底11进行刻蚀形成凹槽110时，凹槽110可以达到较大的深度，例如，在本实施例的一种示例中，衬底11的厚度为D，而凹槽110的深度为d：
5D/6≥d≥D/2；
例如，一种示例中，d为D的2/3，当衬底11的厚度D为600um时，凹槽110的深度约为400um，这样凹槽110内设置光转换材料时，光转换材料的厚度最大可以达到400um，相较于相关技术中10um的厚度而言，本实施例中通过凹槽110来容纳光转换材料，不仅可以避免光转换材料越界的问题，而且可以使得光转换材料的厚度基本不受限，显著提升了光转换效率。
凹槽100的槽口的尺寸可以略大于有源层122在平行于衬底11方向的尺寸，这样可以保证光学材料覆盖在有源层122的出光面上，例如，在本实施例的一些示例中，假定第一半导体层121在预设方向的尺寸为L，其中预设方向可以是外延承载面的长度方向或宽度方向，则凹槽110槽口的在预设方向的尺寸l满足：
5L⁄6≥l≥L⁄2；
在本实施例的一种示例中l为L的2/3。
一些示例中，凹槽110的内侧壁上还设置有槽内反射层111，请参见图2示出的另一种LED芯片20的一种结构示意图：
LED芯片20中衬底11的凹槽110中设置有槽内反射层111，槽内反射层111沿着凹槽110内侧壁设置，其具有反射光线的能力，能够阻止凹槽110内的光线自凹槽110的侧壁射出，同时也能避免外部光线自凹槽110的侧壁射入到凹槽110内。在本实施例的一些示例中，槽内反射层111可以为金属材质的反射层，例如，在本实施例的一些示例中，槽内反射层111中包括但不限于银、铝、铜、金等金属中的至少一种，考虑到铜、金等金属本身颜色偏黄，可能会影响经凹槽110射出的光线的纯净度，所以在部分示例中可以选择银与铝等颜色偏银的金属形成槽内反射层。
在本实施例的一些示例中，LED芯片本身可以不带有光学材料，如图1所示，对于这种LED芯片10，可以在制备显示面板时再在LED芯片10的凹槽110中填充光学材料，例如将LED芯片10固晶到驱动基板之后再在凹槽110中填充光学材料。还有一些示例中，LED芯片本身就包含光学材料，例如，请参见图3所示：LED芯片30的凹槽110中包括光学材料14，例如包括量子点材料或者光散射材料。当LED芯片30包括光学材料时，在获取到LED芯片并制备显示面板的过程中就不需要在另外设置光学材料了。
在本实施例的一些示例中为了保护光学材料14，避免光学材料14因水氧侵蚀而变质，所以LED芯片中还设置有水氧隔离层，请继续参见图3所示，水氧隔离层15设置在光学材料14远离凹槽110之槽底的一侧，换言之水氧隔离层15位于光学材料14靠近凹槽110之槽口的一侧。水氧隔离层15可以与凹槽110的侧壁一起对光学材料14进行密封，阻挡外部水氧、尘埃等与光学材料14接触，提升了光学材料14的三防性能，降低了光学材料14因水氧、尘埃等的影响而变质的可能性，提升了光学材料14的可靠性，增强了LED芯片30的品质。在本实施例的一些示例中，水氧隔离层15中可以包括但不限于SiO 2（氧化硅）与SiN x（氮化硅）中的至少一种。
在本实施例的一些示例中，凹槽110中光学材料14的厚度小于凹槽110的深度，因此光学材料14远离槽底的一侧与衬底11的表面并不齐平，在这种情况下，水氧隔离层15还可以起到平坦层的作用：其一部分位于凹槽110内，另一部分覆盖在衬底11的表面，且水氧隔离层15远离衬底11的一面平坦。
可以理解的是，在一些示例中LED芯片自身也可以不包括水氧隔离层15，例如，可以在制备显示面板的过程中通过其他手段对光学材料14进行保护，或者是在制备显示面板的过程中再另外设置水氧隔离层。
可以理解的是，由于本申请实施例中提供的LED芯片中设置有凹槽，所以，在一些示例中也可以将这种LED芯片称为“带槽LED芯片”，以此和其他结构的LED芯片进行区分。
本实施例中还提供一种显示面板，请参见图4：显示面板40包括驱动基板41、键合材料42以及多个LED像素单元43。
每个LED像素单元43中包括红光子像素、绿光子像素以及蓝光子像素，这些子像素均通过LED芯片形成，因此，在显示面板40中包括多颗LED芯片。这些LED芯片中的至少部分可以为本实施例中前述示例中提供的带槽LED芯片，例如，在本实施例的一些示例中，红光子像素为前述任一示例中提供的凹槽110中设置有红光转换材料14a的带槽LED芯片，绿光子像素与蓝光子像素均可以通过普通LED芯片实现，例如在一种示例中，绿光子像素与蓝光子像素中均包括普通的蓝光LED芯片，只不过来绿光子像素中蓝光LED芯片的出光面上设置有绿光转层；还有一种示例中，绿光子像素与蓝光子像素中分别包括绿光LED芯片与蓝光LED芯片。在本实施例的另一些示例中，绿光子像素为前述任一示例中提供的凹槽110中设置有绿光转换材料14b的带槽LED芯片，红光子像素与蓝光子像素均可以通过普通LED芯片实现。可以理解的是，当红光子像素中包括前述示例中提供的带槽LED芯片时，该LED芯片的凹槽110中设置的红光转换材料14a可以是该LED芯片自带的光学材料，也可以是额外设置的光学材料；同样地，当红光子像素中包括前述示例中提供的带槽LED芯片时，该LED芯片的凹槽110中设置的绿光转换材料14b可以是该LED芯片自带的光学材料，也可以是额外设置的光学材料。在LED像素单元中还包括蓝光子像素，蓝光子像素可以通过蓝光LED芯片形成，形成蓝光子像素的蓝光LED芯片可以是普通的蓝光LED芯片，例如，不包括衬底，没有凹槽的蓝光LED芯片，也可以是前述任一示例中提供的带有凹槽110的带槽LED芯片，例如，请继续参见图4。在图4当中，蓝光子像素对应的LED芯片中设置有衬底11，衬底11上形成有槽口背向蓝光外延层12的凹槽110，凹槽110中设置有光散射材料14c，在本实施例的其他一些示例中，凹槽110中设置的是其他光透射材料。
驱动基板41上设置有驱动电路，驱动电路可以设置于驱动基板41的表面，也可以位于驱动基板41的内部。驱动基板41的两个表面中有一个用于设置LED像素单元，这里将该表面称为“芯片承载面”。在芯片承载面中设置有多个板上电极410，板上电极410一方面与驱动电路电连接，另一方面用于通过键合材料42与LED芯片的芯片电极13键合，实现与LED像素单元的电连接。
毫无疑义地，键合材料42具有导电性，其可以是焊料，也可以是导电胶，例如，在一种示例中选择包括但不限于金锡合金、铟、锡化铟中的至少一种焊料作为键合材料42。在另一种示例中，可以选择导电银胶、ACF（Anisotropic Conductive Film，异方性导电胶）等导电胶中的至少一种作为键合材料42。
驱动基板41可以是透明基板，例如玻璃基板、蓝宝石基板等，也可以是非透明基板，例如FPC（Flexible Printed Circuit，柔性电路板）或者普通的PCB（Printed Circuit Board，印制电路板）等。在本实施例的一些示例中，驱动基板41是透明基板，在这种情况下，为了减少甚至避免LED芯片的光射向驱动基板41后从驱动基板41透射出去，本实施例一些示例提供的显示面板中还设置有基板反射层，请参见图5，在显示面板50中，基板反射层44设置于驱动基板41远离LED像素单元43的一侧，基板反射层44可以对从LED芯片射过来的光线进行反射，从而使得光线最终从显示面板的出光面射出，提升了显示面板50的光效。基板反射层44可以为金属材质的反射层，其同样可以通过包括但不限于银、铝、铜、金等金属中的至少一种形成。还有一些示例中，为了表面光线自驱动基板41透射出去，也可以考虑在驱动基本41的芯片承载面上涂覆反光材料。
在本实施例的一些示例中，如图6所示，显示面板60中包括第一封装层45，其设置在驱动基板41设置有LED芯片的一侧，且其位于相邻LED芯片之间的间隙中。第一封装层45具有挡光作用，例如，第一封装层45可以通过黑胶形成，材质包括但不限于环氧树脂、有机硅树脂中的至少一种。显示面板60中设置第一封装层主要是为了防止相邻LED芯片串色，避免一颗LED芯片点亮的时候影响相邻LED芯片的出光效果。所以，在本实施例中，第一封装层45远离驱动基板41的一面与该驱动基板41的距离（也可以理解为第一封装层45与驱动基板41芯片承载面的最大距离）大于蓝光外延层12中有源层122远离该驱动基板41的一面与该驱动基板41的距离（也可以理解为有源层122与驱动基板41芯片承载面的最大距离）。以驱动基板41在下，而LED像素单元43在上的方位来说，第一封装层45的上表面高于有源层122的上表面。在本实施例的一些示例中，如图6所示，第一封装层45远离驱动基板41的一面与蓝光外延层12远离驱动基板41的一面齐平，也即第一封装层45的上表面与蓝光外延层12的上表面齐平。还有一些示例中，第一封装层45远离驱动基板41的一面与衬底11远离驱动基板41的一面齐平，即第一封装层45的上表面与衬底11的上表面齐平。
可以理解的是，第一封装层45除了可以避免相邻子像素串色以外，还可以对LED芯片起到一定的保护作用，因为第一封装层45将LED芯片围合在中间，填充了相邻LED芯片间的间隙，在显示面板遭遇碰撞时，可以防止LED芯片与驱动基板41间的电连接因应力影响被破坏的概率，可以减少甚至避免LED芯片移位、从驱动基板41上脱落的问题。
在本实施例的一些示例中，显示面板60中还包括第二封装层46，第二封装层46设置在第一封装层45远离驱动基板41的一侧，以驱动基板41在下，LED像素单元43在上的方位来说，第二封装层46设置在第一封装层45的上表面。请继续参见图6所示，本实施例的一些示例中，第二封装层46远离驱动基板41的一面与驱动基板41的距离大于LED芯片远离驱动基板41的一面与驱动基板的距离，也即第二封装层46的上表面高于LED芯片的上表面。和挡光的第一封装层45不同，第二封装层46因为会覆盖在LED芯片的发光面上，故其应该具备透光能力，在本实施例的一些示例中，第二封装层46可以为透明材料。一些示例中第二封装层46的透光率大于60%且小于90%，也即第二封装层46不完全透明，这样可以避免第二封装层46反射环境光，有利于提升显示面板60的显示效果。例如，一种示例中，第二封装层46通过半透胶形成，透光率在70%左右，具体材质可以为环氧树脂或有机硅树脂。
设置第二封装层46主要是为了对LED像素单元43进行保护，第二封装层46的保护作用可以分为两个方面：一方面，第二封装层46将LED芯片包覆在内，可以减少外力撞击对LED芯片的损坏；另一方面，第二封装层46隔绝了外部水氧、尘埃，提升了LED芯片的可靠性，增强了显示面板60的品质。除了保护作用以外，第二封装层46还可以起到平坦显示面板60表面的作用。
可以理解的是，虽然在图6当中显示面板60中同时设置有第一封装层45与第二封装层46，但在其他一些示例中，也可以仅设置第一封装层45，而不设置第二封装层46。如果在LED芯片中不包括水氧隔离层15，则显示面板60中通常会设置第二封装层46。
本实施例中还提供一种电子设备，该电子设备中包括处理器以及前述任一示例中提供的显示面板，处理器与显示面板内的驱动基板41通信连接，处理器可以对显示面板的显示进行控制。可以理解的是，该电子设备可以是包括显示面板的手机、平板电脑、笔记本电脑、掌上电脑、个人数字助理（Personal Digital Assistant，PDA）、便捷式媒体播放器（Portable Media Player，PMP）、导航装置、可穿戴设备、智能手环、计步器等移动终端，也可以是包括显示面板的数字TV、台式计算机等固定终端。
可以理解的是，电子设备中除了包括处理器与显示面板以外，还可以包括RF（Radio Frequency，射频）单元、WiFi模块、音频输出单元、传感器、接口单元、存储器等部件。
本实施例提供的LED芯片、显示面板以及电子设备，由于LED芯片中在衬底中设置了容纳光学材料的凹槽，这样可以避免在设置光转换材料时出现光转换材料越界的问题。同时，因为凹槽的深度仅受衬底厚度的影响，而衬底一般都会比较厚，所以该LED芯片中光转换材料的厚度几乎不受限，能够做到较大的厚度，有利于提升LED芯片的光转换效率，进而增强显示面板的显示效果。另外，由于LED芯片中的衬底是蓝光外延层的生长衬底，因此在LED芯片制备过程中，可以不需要剥离生长衬底而另设基板，有利于降低LED芯片的制备成本，提升LED芯片的生产效率。
本申请另一可选实施例：
本实施例提供一种LED芯片制备方法，该LED芯片制备方法用于制备前述实施例中所提供的带槽LED芯片，请参见图7示出的该LED芯片制备方法的一种流程示意图，以及图8示出的该LED芯片制备方法的一种制程状态变化示意图：
S702：在衬底上生长蓝光外延层。
首先请参见图8的（a）所示，提供一衬底81，在本实施例中，衬底81作为蓝光外延层82的生长衬底，其可以是蓝宝石衬底、硅衬底以及GaN衬底中的任意一种。蓝光外延层82中至少包括第一半导体层821、有源层822以及第二半导体层823，对于其中可能包含的其他层结构，请参见前述实施例的介绍，这里不再赘述。生长蓝光外延层82时，按照第一半导体层821、有源层822、第二半导体层823的顺序进行生长，所以生长出来的蓝光外延层82中第一半导体层821比有源层822更靠近衬底81，如图8中的（b）所示。
S704：设置芯片电极。
蓝光外延层82生长结束后，可以在蓝光外延层82的电极设置区设置芯片电极83，通常情况下，设置芯片电极83时需要先对蓝光外延层82进行刻蚀，以是电极设置区全部外露。设置的芯片电极83包括与第一半导体层821电连接的第一电极831以及与第二半导体层823电连接的第二电极832，如图8中的（c）所示。
S706：在衬底中形成槽口背向蓝光外延层，且位置与有源层的位置相对的凹槽。
在芯片电极83设置完成后，可以在衬底81中形成槽口背向蓝光外延层82的凹槽810，并且凹槽810的位置与蓝光外延层82中有源层822的位置相对，如图8中的（d）所示。在本实施例的一些示例中，凹槽810可以通过对衬底81进行刻蚀形成，凹槽810的槽口的尺寸可以略大于槽底的尺寸，例如，在本实施例的一些示例中，凹槽810的纵剖面呈倒梯形。在本实施例的一种示例中，衬底81的厚度D，与凹槽810的深度d满足5D/6≥d≥D/2的关系，一种示例中，d为D的2/3。在本实施例的一些示例中，第一半导体层821在预设方向（衬底81的长度方向或宽度方向）的尺寸L，与凹槽810槽口的在预设方向的尺寸l满足5L/6≥l≥L/2的关系，一种示例中，l为L的2/3。
在本实施例的其他一些示例中，自衬底81远离蓝光外延层82的一侧对衬底81进行刻蚀，以形成凹槽810之后，还可以在凹槽810的内侧壁上形成槽内反射层，以利用槽内反射层来阻止凹槽810内的光线自凹槽810的侧壁射出。
在本实施例的其他一些示例中，在形成凹槽810之后，还可以在凹槽内设置光学材料，例如设置光转换材料（诸如量子点材料、荧光粉材料等）、光透射材料（光散射材料）。
在本实施例的一些示例中，在凹槽810内设置光学材料之后，还可以在光学材料上设置水氧隔离层，以利用水氧隔离层来对凹槽810内的光学材料进行保护。
应当理解的是，在制备LED芯片80的过程中，实际上也可以先在衬底81上形成凹槽810，然后再在衬底81的另一表面上生长蓝光外延层82；或者，在一些示例中，可以先在衬底81上生长蓝光外延层82，然后在衬底81上形成凹槽810，随后再设置芯片电极83。
本实施例还提供一种显示面板制备方法，请参见图9示出的该显示面板制备方法的一种流程示意图：
S902：按照前述LED芯片制备方法制备带槽LED芯片。
在本实施例中，LED芯片制备方法制得的LED芯片中包括衬底以及设置在衬底上的凹槽，不过凹槽内没有设置光学材料。在本实施例的一种示例中，虽然不会设置光学材料，不过LED芯片的凹槽中包括槽内反射层。
制备LED芯片的具体流程细节可以参见前述示例的介绍，这里不再赘述。
S904：将带槽LED芯片转移至驱动基板，并通过键合材料键合芯片电极与驱动基板上的板上电极。
在本实施例中，由于LED芯片并不自带光转换材料或者光透射材料，因此，红光子像素、绿光子像素以及蓝光子像素所对应的LED芯片在转移到驱动基板之前，结构都是基本相同的，转移设备可以对这些LED芯片进行无差别地转移。可选地，可以先在驱动基板的板上电极上设置键合材料，然后将LED芯片的芯片电极与板上电极对齐，然后利用键合材料将芯片电极与板上电极键合。在另一示例中，键合材料也可以先设置到LED芯片的芯片电极上。
S906：在凹槽内设置光学材料。
键合LED芯片之后，可以在部分LED芯片的凹槽内按照需求设置红光转换材料、绿光转换材料，对于另一部分LED芯片，可以在其凹槽内填充光投射材料，也可以不在这部分LED芯片的凹槽内填充任何物质。
在本实施例的一种示例中，相邻的多颗LED芯片构成一个LED像素单元，在LED像素单元中包括红光子像素、绿光子像素以及蓝光子像素，其中，形成红光子像素的LED芯片的凹槽中填充有红光转换材料，例如红色量子点材料；形成绿光子像素的LED芯片的凹槽中填充有绿光转换材料，例如绿色量子点材料；形成蓝光子像素的LED芯片的凹槽中填充有光散射材料。
可以理解的是，在本实施例的其他一些示例中，在凹槽内设置光学材料之后，还可以在凹槽的槽口设置水氧隔离层，利用水氧隔离层对光学材料进行保护。
一些示例中，设置光学材料之后还可以在LED芯片之间设置挡光的第一封装层，例如利用黑胶来形成第一封装层，第一封装层填充在LED芯片间的间隙中，其上表面不低于LED芯片有源层的上表面，同时通常情况下第一封装层的上表面也不会高于蓝光外延层的上表面。在本实施例的一种示例中，第一封装层的上表面与蓝光外延层的上表面齐平。
在本实施例的部分示例中，设置第一封装层之后，还可以在第一封装层上形成第二封装层，第二封装层为透光层，在本实施例的一些示例中，第二封装层半透明，其透光率在60%-90%之间，例如可以为70%。
本实施例提供的显示面板制备方法中，在生长蓝光外延层之后，无须剥离生长衬底，而直接在该生长衬底中形成槽口来容纳光学材料，这样在设置光转换材料时，可以利用该凹槽来容纳光转换材料，从而避免光转换材料越界的问题，有利于提升LED芯片出光的纯净度，增强基于显示面板的显示效果。而且凹槽设置在衬底上，其深度仅与衬底的厚度相关，不受其他限制，这样有利于根据需要设置光转换材料的厚度，提升了对蓝光的吸收转换率，进一步增强了显示面板的显示效果。同时，因为制备LED芯片的过程中，可以不用剥离生长衬底，而直接在生长衬底上形成凹槽，简化了LED芯片的制备工艺，有利于提升生产效率，降低生产成本。
本申请又一可选实施例：
为了让本领域技术人员对前述示例中提供的LED芯片、显示面板的优点更清楚，本实施例将结合示例继续对前述显示面板与LED芯片的结构进行介绍，请参见图10示出的一种显示面板的结构示意图：显示面板100包括玻璃驱动基板101、基板反射层102、键合材料103、LED像素单元以及封装层。
其中，LED像素单元包括红色像素点、绿色像素点以及蓝色像素点，这三种颜色的像素点均由带有凹槽的LED芯片104形成。在本实施例中，LED芯片104包括但不限于Micro-LED（微LED）、Mini-LED（迷你LED）或者是OLED（OrganicLight-Emitting Diode，有机发光二极管）等。LED芯片104包括蓝宝石衬底1041、蓝光外延层1042以及芯片电极1043，其中，蓝宝石衬底1041为蓝光外延层1042的生长衬底。蓝光外延层1042中包括第一半导体层、有源层与第二半导体层，三者与蓝宝石衬底1041的距离逐渐增大，另外，虽然图10中并未示出，不过本实施例的蓝光外延层1042中还可以包括欧姆接触层、电流扩展层等。有源层发出的光为蓝光，例如其波长可以为458nm。蓝光外延层1042中第一半导体层与芯片电极1043中第一电极电连接，第二半导体层与芯片电极1043中第二电极电连接。
蓝宝石衬底1041与蓝光外延层1042先对的另一表面被刻蚀形成了凹槽10410，凹槽10410的槽口背向蓝光外延层1042，其槽口尺寸略大于槽底的尺寸，在图10当中，凹槽10410的总剖面形状为倒梯形，因此，凹槽10410立体结构可以呈倒置的圆台状，或者是棱台状。在本实施例的一种示例中，蓝宝石衬底1041的厚度为600um左右，凹槽10410的深度为蓝宝石衬底1041厚度的2/3，因此，凹槽10410的深度约为400um。同时，凹槽10410槽口沿蓝宝石衬底1041长度方向的尺寸为第一半导体层沿蓝宝石衬底1041长度方向的尺寸的2/3，凹槽10410槽口沿蓝宝石衬底1041宽度方向的尺寸也同样为第一半导体层沿蓝宝石衬底1041宽度方向的尺寸的2/3。
凹槽10410的内侧壁上设置有槽内反射层10411，在本实施例中槽内反射层包括银与铝中的至少一种。槽内反射层10411可以阻挡凹槽10410内的光线从凹槽10410侧壁射出，同样也可以阻止外部光线自凹槽10410侧壁射入。
显示面板100中，凹槽10410中设置有光学材料，在一个LED像素单元对应的三颗LED芯片的凹槽10410中分别设置有红色量子点材料10441、绿色量子点材料10442以及光散射材料10443。凹槽10410内光学材料的厚度略小于凹槽10410的深度，不过因为凹槽10410足够深，因此红色量子点材料10441与绿色量子点材料10442分别形成的光转换层也能够提供足够的光转换能力来对有源层发出的蓝光进行转换。可以理解的是，设置在凹槽10410内的光学材料可以是LED芯片104本身自带的，也可以是制备显示面板100时另外设置的。
在凹槽10410的槽口还设置有水氧隔离层1045，水氧隔离层1045一部分填充在凹槽10410内，另一部分覆盖在衬底1041的上表面，水氧隔离层1045的上表面平坦。在本实施例的一些示例中，水氧隔离层1045可以包含氧化硅与氮化硅中的至少一种。水氧隔离层1045不仅可以起到平坦层的作用，更重要的是，其可以与凹槽10410的底壁、侧壁一起将光学材料隔离在槽内，避免光学材料与外界接触，实现了对光学材料的水氧防护。
玻璃驱动基板101中设置有驱动电路，且其芯片承载面上设置有多个与驱动电路电连接的板上电极1010，板上电极1010与芯片电极1043一一对应，二者通过键合材料103键合在一起，可选地，本实施例中的键合材料103可以为金锡合金、铟、锡化铟等焊材。在其他一些示例中，键合材料103可以为导电银胶、ACF等导电胶。
基板反射层102设置于玻璃驱动基板101与芯片承载面相对的另一面，其可以为金属材质例如为铝材、银材或者银铝合金等。基板反射层102可以将LED芯片104射到玻璃驱动基板101背面的光线反射会玻璃驱动基板101的正面，提高显示面板的光效。
封装层包括第一封装层105与第二封装层106，其中第一封装层105为挡光封装层，其可以通过纯黑胶制得，材质可选为环氧树脂或有机硅树脂。第一封装层105填充在LED芯片104间的间隙中，其上表面与蓝光外延层1042的上表面齐平。第二封装层106的下表面与第一封装层105的上表面贴合，其覆盖在LED芯片104的出光面上，可选地，第二封装层106的上表面高于蓝宝石衬底1041的上表面。第二封装层106为透光封装层，其透光率在70%作用，这样既可以保证子像素的光透出，同时又可以避免第二封装层106形成镜面反射环境光进而影响显示面板显示效果的问题。
本实施例提供的显示面板与LED芯片，通过在LED芯片的蓝宝石衬底上制作凹槽，并在凹槽内填充量子点材料，在利用蓝光LED芯片实现全彩化的同时，避免了量子点材料的越界，也打破了量子点材料厚度的限制，使得量子点材料对蓝光的吸收效率、转换效率成倍提升。另外通过设置槽内反射层、第一封装层，避免了子像素间的串色问题，同时，槽内反射层、基板反射层的设置又进一步提升了显示面板的光效。而且，由于在对LED芯片进行转移的时候，转移都是蓝光LED芯片，可以提升巨量转移的效率与良率。
应当理解的是，本申请的应用不限于上述的举例，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本申请所附权利要求的保护范围。

Claims (20)

  1. 一种LED芯片，其特征在于，包括：
    衬底；
    设置于所述衬底的外延承载面上的蓝光外延层；以及
    芯片电极；
    所述蓝光外延层包括第一半导体层、有源层、第二半导体层，且三者与所述衬底的距离依次变大；所述芯片电极包括分别与所述第一半导体层、第二半导体层电连接的第一电极、第二电极；所述衬底能够作为所述蓝光外延层的生长基板，所述衬底上与所述外延承载面相对的另一表面设置有凹槽；所述凹槽的位置与所述有源层的位置相对，且其被配置为容纳光学材料。
  2. 如权利要求1所述的LED芯片，其特征在于，所述凹槽的内侧壁上设置有槽内反射层，所述槽内反射层被配置为阻止所述凹槽内的光线自所述凹槽的侧壁射出。
  3. 如权利要求2所述的LED芯片，其特征在于，所述槽内反射层包括银、铝中的至少一种。
  4. 如权利要求1所述的LED芯片，其特征在于，所述凹槽的深度d满足：5D/6≥d≥D/2，其中，所述D为所述衬底的厚度。
  5. 如权利要求1所述的LED芯片，其特征在于，所述凹槽的槽口在预设方向的尺寸l满足：5L/6≥l≥L/2，其中，所述L为所述第一半导体层在所述预设方向的尺寸，所述预设方向为所述外延承载面的长度方向和宽度方向中的任意一个。
  6. 如权利要求1所述的LED芯片，其特征在于，所述LED芯片还包括设置于所述凹槽内的光学材料，所述光学材料包括光转换材料或光散射材料。
  7. 如权利要求6所述的LED芯片，其特征在于，所述LED芯片还包括水氧隔离层，所述水氧隔离层设置于所述光学材料靠近所述凹槽之槽口的一侧。
  8. 如权利要求7所述的LED芯片，其特征在于，所述水氧隔离层包括氧化硅与氮化硅中的至少一种。
  9. 如权利要求1所述的LED芯片，其特征在于，所述衬底为所述蓝光外延层的生长衬底。
  10. 如权利要求1所述的LED芯片，其特征在于，所述衬底为蓝宝石衬底、硅衬底及氮化镓衬底中的任意一种。
  11. 一种显示面板，其特征在于，包括：
    驱动基板；
    键合材料；以及
    多个LED像素单元；
    所述LED像素单元中包括红光子像素、绿光子像素与蓝光子像素，所述红光子像素与所述绿光子像素中至少一个所包含的发光元件为带槽LED芯片，所述带槽LED芯片包括衬底、设置于所述衬底的外延承载面上的蓝光外延层以及芯片电极；所述蓝光外延层包括第一半导体层、有源层、第二半导体层，且三者与所述衬底的距离依次变大；所述芯片电极包括分别与所述第一半导体层、第二半导体层电连接的第一电极、第二电极；所述衬底能够作为所述蓝光外延层的生长基板，所述衬底上与所述外延承载面相对的另一表面设置有凹槽；所述凹槽的位置与所述有源层的位置相对，且其被配置为容纳光学材料；所述带槽LED芯片的芯片电极通过所述键合材料同所述驱动基板上的板上电极键合。
  12. 如权利要求11所述的显示面板，其特征在于，所述驱动基板为透明基板，所述显示面板还包括基板反射层，所述基板反射层设置于所述驱动基板远离所述LED像素单元的一侧。
  13. 如权利要求11所述的显示面板，其特征在于，所述蓝光子像素中包括所述带槽LED芯片，且所述蓝光子像素的所述带槽LED芯片的凹槽中设置有光散射材料。
  14. 如权利要求11所述的显示面板，其特征在于，所述显示面板还包括可挡光的第一封装层，所述第一封装层与所述LED像素单元位于所述驱动基板的同侧，且其设置于所述LED芯片之间的间隙中，所述第一封装层远离所述驱动基板的一面与所述驱动基板的距离大于所述有源层远离所述驱动基板的一面与所述驱动基板的距离。
  15. 如权利要求14所述的显示面板，其特征在于，所述第一封装层远离所述驱动基板的一面与所述蓝光外延层远离所述驱动基板的一面齐平。
  16. 如权利要求14所述的显示面板，其特征在于，所述显示面板还包括可透光的第二封装层，所述第二封装层设置于所述第一封装层远离所述驱动基板的一侧，且所述第二封装层远离所述驱动基板的一面与所述驱动基板的距离大于所述LED芯片远离所述驱动基板的一面与所述驱动基板的距离。
  17. 如权利要求16所述的显示面板，其特征在于，所述第二封装层的透光率大于60%且小于90%。
  18. 一种电子设备，其特征在于，所述电子设备中包括处理器与显示面板，所述处理器与所述显示面板通信连接；所述显示面板包括：
    驱动基板；
    键合材料；以及
    多个LED像素单元；
    所述LED像素单元中包括红光子像素、绿光子像素与蓝光子像素，所述红光子像素与所述绿光子像素中至少一个所包含的发光元件为带槽LED芯片，所述带槽LED芯片包括衬底、设置于所述衬底的外延承载面上的蓝光外延层以及芯片电极；所述蓝光外延层包括第一半导体层、有源层、第二半导体层，且三者与所述衬底的距离依次变大；所述芯片电极包括分别与所述第一半导体层、第二半导体层电连接的第一电极、第二电极；所述衬底能够作为所述蓝光外延层的生长基板，所述衬底上与所述外延承载面相对的另一表面设置有凹槽；所述凹槽的位置与所述有源层的位置相对，且其被配置为容纳光学材料；所述带槽LED芯片的芯片电极通过所述键合材料同所述驱动基板上的板上电极键合。
  19. 一种LED芯片制备方法，其特征在于，包括：
    在衬底上生长蓝光外延层，所述蓝光外延层包括第一半导体层、有源层、第二半导体层，且三者与所述衬底的距离依次变大；
    设置芯片电极，所述电极包括分别与所述第一半导体层、第二半导体层电连接的第一电极、第二电极；
    在所述衬底中形成槽口背向所述蓝光外延层，且位置与所述有源层的位置相对的凹槽，所述凹槽被配置为容纳光学材料。
  20. 一种显示面板制备方法，其特征在于，包括：
    在衬底上生长蓝光外延层，所述蓝光外延层包括第一半导体层、有源层、第二半导体层，且三者与所述衬底的距离依次变大；
    设置芯片电极，所述电极包括分别与所述第一半导体层、第二半导体层电连接的第一电极、第二电极；
    在所述衬底中形成槽口背向所述蓝光外延层，且位置与所述有源层的位置相对的凹槽，以形成带槽LED芯片，所述凹槽被配置为容纳光学材料；
    将所述带槽LED芯片转移至驱动基板，并通过键合材料键合所述芯片电极与所述驱动基板上的板上电极；
    在所述凹槽内设置光学材料。
PCT/CN2021/110607 2021-08-04 2021-08-04 Led芯片、显示面板及制备方法、电子设备 WO2023010344A1 (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116825934A (zh) * 2023-08-30 2023-09-29 南昌凯捷半导体科技有限公司 内嵌对位量子点填充mini-LED芯片及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180308420A1 (en) * 2017-04-21 2018-10-25 Lumens Co., Ltd. Micro led display device and method of fabricating the same
CN110854257A (zh) * 2019-12-12 2020-02-28 佛山市国星半导体技术有限公司 一种可转换颜色的倒装led芯片及其制作方法
CN111725251A (zh) * 2020-07-04 2020-09-29 厦门友来微电子有限公司 高分辨率全彩化MicroLED显示器
CN112234070A (zh) * 2019-06-27 2021-01-15 成都辰显光电有限公司 显示面板、显示装置及显示面板的制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180308420A1 (en) * 2017-04-21 2018-10-25 Lumens Co., Ltd. Micro led display device and method of fabricating the same
CN112234070A (zh) * 2019-06-27 2021-01-15 成都辰显光电有限公司 显示面板、显示装置及显示面板的制造方法
CN110854257A (zh) * 2019-12-12 2020-02-28 佛山市国星半导体技术有限公司 一种可转换颜色的倒装led芯片及其制作方法
CN111725251A (zh) * 2020-07-04 2020-09-29 厦门友来微电子有限公司 高分辨率全彩化MicroLED显示器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116825934A (zh) * 2023-08-30 2023-09-29 南昌凯捷半导体科技有限公司 内嵌对位量子点填充mini-LED芯片及其制作方法
CN116825934B (zh) * 2023-08-30 2023-11-17 南昌凯捷半导体科技有限公司 内嵌对位量子点填充mini-LED芯片及其制作方法

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