WO2023005708A1 - 量子点发光器件及其制备方法、显示装置 - Google Patents

量子点发光器件及其制备方法、显示装置 Download PDF

Info

Publication number
WO2023005708A1
WO2023005708A1 PCT/CN2022/106233 CN2022106233W WO2023005708A1 WO 2023005708 A1 WO2023005708 A1 WO 2023005708A1 CN 2022106233 W CN2022106233 W CN 2022106233W WO 2023005708 A1 WO2023005708 A1 WO 2023005708A1
Authority
WO
WIPO (PCT)
Prior art keywords
quantum dot
layer
dot light
passivation
emitting device
Prior art date
Application number
PCT/CN2022/106233
Other languages
English (en)
French (fr)
Inventor
卢志高
Original Assignee
京东方科技集团股份有限公司
北京京东方技术开发有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 北京京东方技术开发有限公司 filed Critical 京东方科技集团股份有限公司
Publication of WO2023005708A1 publication Critical patent/WO2023005708A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • Embodiments of the present disclosure relate to, but are not limited to, the field of display technologies, and specifically relate to quantum dot light-emitting devices, manufacturing methods thereof, and display devices.
  • Quantum dots also known as semiconductor nanocrystals, are zero-dimensional nanostructures composed of a small number of atoms, and the three dimensions are usually 1nm to 100nm. Quantum dots have adjustable band gaps and narrow emission spectra. They have been widely used in LEDs in recent years. (Light-emitting diode) devices, quantum dot light-emitting diodes have the advantages of self-illumination, high color purity, low energy consumption, stable image, wide viewing angle range, and rich colors. The new generation of display technology has broad application prospects.
  • Quantum Dot Light-Emitting Diode is a device that uses quantum dots as a light-emitting layer; by introducing a light-emitting layer formed of quantum dots between different conductive materials, light of the desired wavelength can be obtained.
  • QLED has the advantages of high color gamut, self-illumination, low start-up voltage, and fast response speed, which makes it have broad application prospects in the field of display and lighting, and is currently a popular research direction.
  • an embodiment of the present disclosure provides a quantum dot light-emitting device, including: a quantum dot light-emitting layer and a hole injection layer disposed on one side of the quantum dot light-emitting layer, the quantum dot light-emitting layer includes On the first surface on the side of the hole injection layer, a passivation function layer is arranged on the first surface, and the passivation function layer is configured to modify the first surface.
  • the passivation functional layer includes at least passivation ions configured to combine with the first surface to passivate the first surface.
  • the passivation functional layer further includes metal ions
  • the hole injection layer includes a second surface close to the quantum dot light-emitting layer
  • the metal ions are disposed on the second surface side.
  • the metal ions are closer to the hole injection layer than the passivation ions; and/or, the passivation ions are closer to the quantum dots than the metal ions luminous layer.
  • the passivating ions are halogen ions.
  • a hole transport layer is further included, the hole transport layer is located between the quantum dot light-emitting layer and the hole injection layer, at least part of the hole transport layer is connected to the passivation layer. At least part of the functional layer is doped together.
  • a doping ratio of the hole transport layer to the passivation functional layer is 1:1 to 20:1.
  • the thickness of the passivation functional layer is 1-20 nm.
  • it further includes a first electrode and a second electrode, the first electrode is located on the side of the hole injection layer away from the quantum dot light-emitting layer, and the second electrode is located on the side of the quantum dot light-emitting layer. layer away from the side of the hole injection layer.
  • an embodiment of the present disclosure further provides a display device, including the aforementioned quantum dot light emitting device.
  • the embodiment of the present disclosure also provides a method for preparing a quantum dot light-emitting device, including:
  • the passivation functional layer is configured to modify the first surface
  • a hole injection layer is formed on the side of the passivation functional layer away from the quantum dot light-emitting layer.
  • a passivation functional layer is formed on the first surface of the quantum dot light-emitting layer, comprising:
  • the passivation function layer is formed on the first surface of the quantum dot light-emitting layer with a metal halide through an evaporation process.
  • a passivation functional layer is formed on the first surface of the quantum dot light-emitting layer, comprising:
  • metal halides are used to form the passivation functional layer
  • hole transport materials are used to form the hole transport layer
  • the passivation At least part of the functional layer is doped with at least part of the hole transport layer
  • FIG. 1 is a schematic structural diagram of a quantum dot light-emitting device according to an embodiment of the present disclosure
  • FIG. 2 is a schematic structural diagram of a quantum dot light-emitting device according to an embodiment of the present disclosure after being powered on;
  • Fig. 3 is a schematic structural view of the combination of passivation ions and the first surface in the quantum dot light-emitting device of the embodiment of the present disclosure
  • FIG. 4 is a second structural schematic diagram of a quantum dot light-emitting device according to an embodiment of the present disclosure
  • FIG. 5 is a second schematic structural view of the quantum dot light-emitting device of the embodiment of the present disclosure after being powered on;
  • FIG. 6 is a line graph of current density and voltage of a quantum dot light emitting device according to an embodiment of the present disclosure
  • FIG. 7 is a schematic structural diagram III of a quantum dot light-emitting device according to an embodiment of the present disclosure.
  • FIG. 8 is a fourth structural schematic diagram of a quantum dot light-emitting device according to an embodiment of the present disclosure.
  • connection should be interpreted in a broad sense.
  • it may be a fixed connection, or a detachable connection, or an integral connection; it may be a mechanical connection, or an electrical connection; it may be a direct connection, or an indirect connection through an intermediate piece, or an internal communication between two components.
  • the contact interface between the quantum dot light-emitting layer and other functional layers is one of the factors affecting the performance of the quantum dot device.
  • the main performance is that the functional layer material quenches the quantum dots, or does not match the quantum dot material, such as energy level mismatch, mobility mismatch, etc.
  • methods for improving the stability of quantum dot materials include changing the core-shell structure of quantum dots, introducing new ligands for quantum dots, and the like. Improving the hole injection capability includes selecting hole transport materials with matching energy levels. However, these methods all have certain problems, such as the complexity of modifying quantum dots, and the poor controllability of the process; there are few hole transport materials that match the energy levels of quantum dots.
  • FIG. 1 is a schematic structural diagram of a quantum dot light-emitting device according to an embodiment of the present disclosure.
  • the quantum dot light-emitting device of the embodiment of the present disclosure includes a substrate 10 (Substrate), a second electrode 11, an electron transport layer 12 (ETL, Electron Transporting Layer), and a quantum dot light-emitting layer 13 (QD EML) that are stacked in sequence.
  • Quantum Dot Emitting Layer Quantum Dot Emitting Layer
  • a passivation functional layer 14 a hole transport layer 15 (HTL, Hole Transporting Layer), a hole injection layer 16 (HIL, Hole Injecting Layer) and a first electrode 17.
  • HTL Hole Transporting Layer
  • HIL Hole Injecting Layer
  • the first electrode 17 is an anode (Anode), and the second electrode 11 is a cathode (Cathode).
  • the thickness of the hole transport layer 15 can be 5nm to 50nm; the thickness of the hole injection layer 16 can be 5nm to 50nm; the thickness of the quantum dot light emitting layer 13 can be 10nm to 60nm; .
  • the quantum dot light-emitting layer 13 includes a first surface 131 close to the hole injection layer 16, the passivation functional layer 14 is disposed on the first surface 131, and the passivation functional layer 14 emits light near the quantum dots.
  • the surface on one side of the layer 13 is at least partially in contact with the first surface 131 .
  • the passivation functional layer 14 is configured to modify the first surface 131 , passivate defects on the first surface 131 , and stabilize the quantum dot light-emitting layer 13 .
  • FIG. 2 is a first structural schematic diagram of a quantum dot light emitting device according to an embodiment of the present disclosure after being powered on.
  • the passivation functional layer 14 includes at least passivation ions 141, and the passivation ions 141 are configured to combine with the first surface 131 of the quantum dot light-emitting layer 13 to passivate the quantum dots to emit light.
  • the first surface 131 of layer 13 is defective.
  • the passivation ions 141 combine with the first surface 131 of the quantum dot light-emitting layer 13 under the action of an electric field, passivate the defects on the first surface 131 of the quantum dot light-emitting layer 13, and passivate
  • the thermal stability of the final quantum dot light-emitting layer 13 will be significantly improved.
  • the temperature tolerance of the quantum dot light emitting device in the embodiment of the present disclosure is increased by 20 degrees.
  • the passivation ions 141 can be combined with the first surface 131 through the dangling bonds on the quantum dots on the first surface 131 of the quantum dot light-emitting layer 13; and/or, the passivation ions 141 can be adsorbed on the quantum dots to emit light. On the quantum dots on the first surface 131 of the layer 13; and/or, passivation ions 141 can enter the shallow surface layer on the side near the hole injection layer 16 inside the quantum dot light-emitting layer 13, and the first surface 131 of the quantum dot light-emitting layer 13 combined.
  • Fig. 3 is a schematic structural view of the combination of passivation ions and the first surface in the quantum dot light-emitting device according to an embodiment of the present disclosure.
  • the passivation ion 141 is a chloride ion as an example.
  • the quantum dot light-emitting device in the embodiment of the present disclosure is energized to emit light
  • the passivation ions 141 combine with the quantum dots on the first surface 131 of the quantum dot light-emitting layer 13 under the action of an electric field.
  • the passivation ions 141 can better passivate defects on the first surface 131 .
  • the passivation functional layer 14 further includes metal ions 142
  • the hole injection layer 16 includes a second surface 151 on a side close to the quantum dot light emitting layer 14 .
  • the quantum dot light-emitting device in the embodiment of the present disclosure is energized and emits light
  • the metal ions 142 move to the second surface 151 of the hole injection layer 16 under the action of an electric field, and the metal ions 142 are arranged on the side of the second surface 151 of the hole transport layer 15 .
  • the carrier mobility of the metal ion 142 is higher than the carrier mobility of the hole injection layer 16
  • the interface performance between the quantum dot light emitting layer 13 and the hole injection layer 16 is improved, and the hole injection and the hole injection of the quantum dot light emitting device are improved. Transmission rate.
  • the metal ions 142 in the passivation functional layer 14 are closer to the hole injection layer 16 than the passivation ions 141, so that more metal ions 142 can be arranged on the second surface 151 side of hole transport layer 15;
  • the ions 141 can combine with the quantum dots on the first surface 131 of the quantum dot light emitting layer 13 .
  • the material of the passivation function layer 14 may be a metal halide, for example, the material of the passivation function layer 14 may be ferric chloride, zinc chloride or the like.
  • the passivation ions 141 in the passivation functional layer 14 may be halogen ions, for example, the passivation ions 141 may be fluoride ions, chloride ions, bromide ions, iodide ions, astatine ions and the like.
  • the metal ions 142 in the passivation functional layer 14 can be iron ions, zinc ions, aluminum ions and the like.
  • the defects on the first surface 131 of the quantum dot light emitting layer 13 are passivated, so that the quantum dot light emitting layer 13 is more stable.
  • the metal ions 142 are arranged on the second surface 151 side of the hole transport layer 15, modify the second surface 151 of the hole transport layer 15, improve the interface properties between the quantum dot light-emitting layer 13 and the hole transport layer 15, and improve hole injection. The ability of the quantum dot light-emitting layer 13.
  • the quantum dot light-emitting layer 13 is only combined with passivation ions 141 on the side away from the electron transport layer 12 and close to the passivation functional layer 14, so that the quantum dot light-emitting layer 13 can be selectively improved.
  • the quantum dot light-emitting device in the embodiment of the present disclosure can be top-emitting
  • the first electrode 17 is a transparent conductive electrode
  • the transparent conductive electrode can be metal nanowires, indium tin oxide (ITO), thin silver, thin aluminum wait.
  • the quantum dot light emitting device in the embodiment of the present disclosure may be bottom emitting.
  • the second electrode 11 is a transparent conductive electrode
  • the transparent conductive electrode may be a metal nanowire, indium tin oxide (ITO), thin silver, thin aluminum, or the like.
  • the electron transport layer 12 receives electrons from the cathode, and can transfer the donated electrons to the quantum dot light emitting layer.
  • the electron transport layer 12 also serves to facilitate the transport of electrons.
  • Electron transport layer 12 material can adopt azo compound nanoparticles (AZO-NPs), zinc oxide magnesium alloy nanoparticles (ZMO-NPs), zinc oxide nanoparticles (ZnO-NPs), sputtered zinc oxide non-nanoparticles and oxide Zn-Al alloy nanoparticles. But the exemplary embodiments of the present application are not limited thereto.
  • the quantum dot light emitting layer 13 is used for emitting light.
  • the material of the quantum dot light-emitting layer 13 may be selected from binary phase quantum dots, ternary phase quantum dots, or quaternary phase quantum dots, etc., but is not limited thereto.
  • the binary phase quantum dots are selected from CdS, CdSe, CdTe, InP, AgS, PbS, PbSe or HgS, etc. without limitation;
  • the ternary phase quantum dots are selected from ZnCdS, CuInS, ZnCdSe, ZnSeS, ZnCdTe or PbSeS, etc.
  • the quaternary phase quantum dots are selected from ZnCdS/ZnSe, CuInS/ZnS, ZnCdSe/ZnS, CuInSeS or ZnCdTe/ZnS, PbSeS/ZnS, etc. are not limited thereto.
  • the hole transport layer 15 can play a role in promoting hole transport.
  • the material of the hole transport layer 15 can be selected from organic materials with hole transport ability, including but not limited to poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl) diphenylamine) ( TFB), polyvinylcarbazole (PVK), poly(N,N'bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (poly-TPD), poly(9, 9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine) (PFB), 4,4',4"-tris(carbazol-9-yl)triphenylamine ( TCTA), 4,4'-bis(9-carbazole)biphenyl (CBP), N,N'-diphenyl
  • the hole transport layer 15 can also be selected from inorganic materials with hole transport capabilities, including but not limited to doped or non-doped Doped with one or more of MoOx, VOx, WOx, CrOx, CuO, MoS2, MoSe2, WS2, WSe2, CuS, but the exemplary embodiment of the present application is not limited thereto.
  • the hole injection layer 16 can promote hole injection.
  • the material of the hole injection layer 16 includes but not limited to poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid (PEDOT:PSS), copper phthalocyanine (CuPc), 2,3,5,6-tetra Fluoro-7,7',8,8'-tetracyanoquinone-dimethyl (F4-TCNQ), 2,3,6,7,10,11-hexacyano-1,4,5,8,9, One of 12-hexaazatriphenylene (HATCN), polythienothiophene (PTT) doped with poly(perfluoroethylene-perfluoroether sulfonic acid) (PFSA), transition metal oxides, and metal chalcogenides
  • the transition metal oxide includes one or more of MoO3, VO2, WO3, CrO3, CuO
  • the metal chalcogenide compound includes one or
  • the first electrode 17 is an anode, and the first electrode 17 includes an oxide material, a metal material or a composite material of oxide and metal.
  • oxide materials include, but are not limited to, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium gallium oxide (IGO), gallium zinc oxide (GZO), indium gallium zinc oxide (IGZO) , indium oxide (In2O3), aluminum zinc oxide (AZO), magnesium doped zinc oxide (MZO), aluminum doped magnesium oxide (AMO), antimony doped tin oxide (ATO), fluorine doped tin dioxide (FTO) , at least one or more of fluorophosphorus co-doped tin dioxide (FPTO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • ZnO zinc oxide
  • IGO indium gallium oxide
  • GZO gallium zinc oxide
  • IGZO indium gallium zinc oxide
  • In2O3 aluminum zinc oxide
  • the second electrode 11 is a cathode, and the second electrode 11 includes an oxide material, a metal material or a composite material of oxide and metal.
  • oxide materials include, but are not limited to, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium gallium oxide (IGO), gallium zinc oxide (GZO), indium gallium zinc oxide (IGZO) , indium oxide (In2O3), aluminum zinc oxide (AZO), magnesium doped zinc oxide (MZO), aluminum doped magnesium oxide (AMO), antimony doped tin oxide (ATO), fluorine doped tin dioxide (FTO) , at least one or more of fluorophosphorus co-doped tin dioxide (FPTO). But the exemplary embodiments of the present application are not limited thereto.
  • the preparation process of the quantum dot light-emitting device of this embodiment includes:
  • the substrate 10 may be a rigid substrate or a flexible substrate.
  • the rigid substrate includes but not limited to one or more of glass, metal foil or ceramic material.
  • the flexible substrate can use materials such as polyimide PI, polyethylene terephthalate PET or surface-treated polymer soft film.
  • the passivation functional layer 14 can be a metal halide.
  • the quantum dot light-emitting device passivates the defects on the first surface 131 of the quantum dot light-emitting layer 13 through the passivation functional layer 14 .
  • the thermal stability of the passivated quantum dot light-emitting layer 13 will be significantly improved.
  • the second surface 151 of the hole transport layer 15 is modified by the passivation functional layer 14 to improve the interface properties between the quantum dot light emitting layer 13 and the hole transport layer 15 and improve the ability of injecting holes into the quantum dot light emitting layer 13 .
  • the preparation process of the quantum dot light-emitting device in the embodiment of the present disclosure can be realized by using the existing mature preparation equipment, the improvement of the existing process is small, it can be well compatible with the existing preparation process, and it has the advantages of simple process realization, high production efficiency, It has the advantages of low production cost and high yield rate, and has good application prospects.
  • FIG. 4 is a second structural schematic diagram of a quantum dot light-emitting device according to an embodiment of the present disclosure.
  • the hole transport layer 15 is located between the quantum dot light-emitting layer 13 and the hole injection layer 16, at least part of the hole transport layer 15 and at least part of the passivation function layer 14 mixed together.
  • the passivation functional layer 14 and the hole transport layer 15 are partially or completely doped together through the same evaporation process.
  • the passivation function layer 14 and the hole transport layer 15 are doped together, which can reduce the thickness of the quantum dot light-emitting device, simplify the production process, and improve the production efficiency.
  • the hole transport layer 15 includes a stacked first sub-hole transport layer 18 and a second sub-hole transport layer 19, and the first sub-hole transport layer 18 is located in the hole
  • the side of the hole transport layer 15 is close to the quantum dot light-emitting layer 13
  • the second sub-hole transport layer 19 is located on the side of the hole transport layer 15 away from the quantum dot light-emitting layer 13 .
  • the first sub-hole transport layer 18 and the passivation functional layer 14 are doped together through the same evaporation process to form a doped film layer.
  • the surface of the doped film layer near the second hole transport layer 19 is at least partially in contact with the second hole transport layer 19; at least partially.
  • the first sub-hole transport layer 18 and the second sub-hole transport layer 19 may use the same hole-transport material, or may use different hole-transport materials. Limit.
  • FIG. 5 is a second structural schematic diagram of the quantum dot light-emitting device according to an embodiment of the present disclosure after being powered on.
  • the passivation functional layer 14 includes passivation ions 141 and metal ions 142.
  • the passivation ions 141 move to the first surface 131 of the quantum dot luminescent layer 13 under the action of an electric field, and the passivation ions 141 are configured to interact with the first surface 131 of the quantum dot luminescent layer 13
  • One surface 131 is combined to passivate defects on the first surface 131 of the quantum dot light-emitting layer 13 .
  • the thermal stability of the passivated quantum dot light-emitting layer 13 will be significantly improved.
  • the metal ions 142 move to the second surface 151 of the hole transport layer 15 under the action of the electric field, and the metal ions 142 are arranged on the second surface 151 side of the hole transport layer 15 to modify the second surface 151 of the hole transport layer 15,
  • the interface properties between the quantum dot light-emitting layer 13 and the hole transport layer 15 are improved, and the hole injection and transport capabilities of the quantum dot light-emitting layer 13 are improved.
  • the doping ratio of the hole transport layer 15 and the passivation function layer 14 is 1:1 to 20:1.
  • Fig. 6 is a line graph of current density and voltage of a quantum dot light emitting device according to an embodiment of the present disclosure.
  • the quantum dot light-emitting device includes a substrate 10, a second electrode 11, an electron transport layer 12, a quantum dot light-emitting layer 13, a passivation function layer 14, a hole transport layer 15, a hole injection layer 16, and a first electrode 17, which are stacked in sequence. .
  • the electron transport layer 12 adopts zinc oxide nanoparticles (ZnO-NPs), and the thickness of the electron transport layer 12 is 30nm; the quantum dot luminescent layer 13 adopts CdS, and the thickness of the quantum dot luminescent layer 13 is 20nm; Ferric chloride, the hole transport layer 15 adopts an organic material with hole transport capability.
  • the hole transport layer 15 includes a stacked first sub-hole transport layer 18 and a second sub-hole transport layer 19, the first sub-hole transport layer 18 is located on the side of the hole transport layer 15 close to the quantum dot light-emitting layer 13, The second sub-hole transport layer 19 is located on the side of the hole transport layer 15 away from the quantum dot light-emitting layer 13 .
  • the first sub-hole transport layer 18 and the passivation functional layer 14 are doped together through the same evaporation process to form a doped film layer, the thickness of the doped film layer is 20nm; the hole injection layer 16 is made of organic materials, The hole injection layer 16 has a thickness of 5 nm.
  • the doping ratio of the hole transport layer 15 (HTL) to the passivation functional layer 14 (FeCl 3 ) was 20:1 in the controlled doped film layer; in Experimental Example 2, the controlled doped film layer, the doping ratio of the hole transport layer 15 (HTL) to the passivation functional layer 14 (FeCl 3 ) is 20:2; in Experimental Example 3, the hole transport layer 15 (HTL ) and the passivation functional layer 14 (FeCl 3 ) in a doping ratio of 20: 3 ; ) with a doping ratio of 20:4; in Experimental Example 5, the doping ratio of the hole transport layer 15 (HTL) and the passivation functional layer 14 (FeCl 3 ) in the control doped film layer is 20:6; In Experimental Example 6, the passivation function layer 14 (FeCl 3 ) was not doped in the doped film layer.
  • the above-mentioned experimental examples 1 to 6 were energized experiments, and the current density of the quantum dot light-emitting
  • the current density of the quantum dot light-emitting device in Experimental Example 6 is about 10 mA/cm 2 at 5V.
  • the current density of quantum dot light-emitting devices at the same voltage is greater, indicating that at the same voltage, doping FeCl3 can increase the current of quantum dot light-emitting devices and reduce the film density. interface pressure drop. Under the same voltage, the increase of current indicates that more carriers are injected.
  • FIG. 7 is a schematic structural diagram III of a quantum dot light-emitting device according to an embodiment of the present disclosure.
  • the hole transport layer 15 and the passivation functional layer 14 are doped together through the same evaporation process, so that the passivation functional layer 14 and the hole transport layer 15 are doped together to form a doped Miscellaneous membrane layer.
  • the surface of the doped film layer close to the hole injection layer 16 is at least partially in contact with the hole injection layer 16 ; the surface of the doped film layer close to the quantum dot light emitting layer 13 is at least partially in contact with the quantum dot light emitting layer 13 .
  • the passivation function layer 14 and the hole transport layer 15 are doped together, which can reduce the thickness of the quantum dot light-emitting device, simplify the production process, and improve the production efficiency.
  • FIG. 8 is a fourth structural schematic diagram of a quantum dot light-emitting device according to an embodiment of the present disclosure.
  • the quantum dot light emitting device of the embodiment of the present disclosure may adopt an upright structure.
  • the quantum dot light-emitting device in the embodiment of the present disclosure includes a substrate 10 (Substrate), a second electrode 11, a hole injection layer 16 (HIL, Hole Injecting Layer), a hole transport layer 15 (HTL, Hole Transporting Layer), A passivation function layer 14, a quantum dot light emitting layer 13 (QD EML, Quantum Dot Emitting Layer), an electron transport layer 12 (ETL, Electron Transporting Layer) and a first electrode 17.
  • An embodiment of the present disclosure also provides a display device, including the quantum dot light-emitting device described above.
  • the display device includes a mobile phone, a tablet computer, a smart wearable product (such as a smart watch, a bracelet, etc.), a personal digital assistant (personal digital assistant, PDA), a vehicle computer, and the like.
  • PDA personal digital assistant
  • the embodiment of the present application does not specifically limit the specific form of the above-mentioned foldable display device.
  • An embodiment of the present disclosure also provides a method for preparing a quantum dot light-emitting device, including:
  • the passivation functional layer is configured to modify the first surface
  • a hole transport layer is formed on the side of the passivation functional layer away from the quantum dot light-emitting layer.
  • a passivation functional layer is formed on the first surface of the quantum dot light-emitting layer, comprising:
  • the passivation function layer is formed on the first surface of the quantum dot light-emitting layer with a metal halide through an evaporation process.
  • a passivation functional layer is formed on the first surface of the quantum dot light-emitting layer, comprising:
  • metal halides are used to form the passivation functional layer
  • hole transport materials are used to form the hole transport layer
  • the passivation At least part of the functional layer is doped with at least part of the hole transport layer.
  • the preparation method of the quantum dot light-emitting device in the embodiment of the present disclosure can form a passivation functional layer on any surface of the quantum dot light-emitting layer through an evaporation process, and selectively improve the performance of the surface of the quantum dot light-emitting layer.
  • the preparation method of the quantum dot light-emitting device in the embodiment of the present disclosure forms a passivation functional layer through an evaporation process, and does not need to introduce a solvent during the preparation of the passivation functional layer, thereby avoiding the influence of the solvent on the morphology of the quantum dot light-emitting layer ; and the thickness of the introduced passivation functional layer can be precisely controlled through the evaporation process, and the film-forming property is good.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

提供一种量子点发光器件及其制备方法、显示装置，量子点发光器件包括：量子点发光层（13）以及设置于量子点发光层（13）一侧的空穴注入层（16），量子点发光层（13）包括靠近空穴注入层（16）一侧的第一表面（131），第一表面（131）上设置有钝化功能层（14），钝化功能层（14）被配置为修饰第一表面（131）。

Description

量子点发光器件及其制备方法、显示装置
本申请要求于2021年7月26日提交中国专利局、申请号为202110846230.X、发明名称为“量子点发光器件及其制备方法、显示装置”的中国专利申请的优先权，其内容应理解为通过引用的方式并入本申请中。
技术领域
本公开实施例涉及但不限于显示技术领域，具体涉及量子点发光器件及其制备方法、显示装置。
背景技术
量子点也称半导体纳米晶，是少量原子组成的、三个维度尺寸通常是1nm～100nm的零维纳米结构，量子点具有带隙可调、窄的发射谱，近些年广泛的应用在LED(发光二极管)器件，量子点发光二极管具有自发光、色纯度高、能耗低、图像稳定、视角范围广、色彩丰富等优点，近些年被认为是继LCD和OLED(有机发光二极管)之后的新一代显示技术，具有广阔的应用前景。
量子点发光二极管(QLED，Quantum Dot Light-Emitting Diode)是将量子点作为发光层的器件；通过在不同的导电材料之间引入由量子点形成的发光层，从而得到所需波长的光。QLED具有色域高、自发光、启动电压低、响应速度快等优点，使得其在显示领域以及照明领域具有广阔的应用前景，是目前热门的研究方向。
发明内容
以下是对本公开详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
第一方面，本公开实施例提供了一种量子点发光器件，包括：量子点发光层以及设置于所述量子点发光层一侧的空穴注入层，所述量子点发光层包 括靠近所述空穴注入层一侧的第一表面，所述第一表面上设置有钝化功能层，所述钝化功能层被配置为修饰所述第一表面。
在示例性实施方式中，所述钝化功能层至少包括钝化离子，所述钝化离子被配置为与所述第一表面结合，钝化所述第一表面。
在示例性实施方式中，所述钝化功能层还包括金属离子，所述空穴注入层包括靠近所述量子点发光层一侧的第二表面，所述金属离子设置于所述第二表面一侧。
在示例性实施方式中，所述金属离子相较于所述钝化离子更靠近所述空穴注入层；和/或，所述钝化离子相较于所述金属离子更靠近所述量子点发光层。
在示例性实施方式中，所述钝化离子为卤元素离子。
在示例性实施方式中，还包括空穴传输层，所述空穴传输层位于所述量子点发光层与所述空穴注入层之间，所述空穴传输层的至少部分与所述钝化功能层的至少部分掺杂在一起。
在示例性实施方式中，所述空穴传输层与所述钝化功能层的掺杂比例为1:1至20:1。
在示例性实施方式中，所述钝化功能层的厚度为1-20nm。
在示例性实施方式中，还包括第一电极和第二电极，所述第一电极位于所述空穴注入层远离所述量子点发光层一侧，所述第二电极位于所述量子点发光层远离所述空穴注入层一侧。
第二方面，本公开实施例还提供了一种显示装置，包括前述的量子点发光器件。
第三方面，本公开实施例还提供了一种量子点发光器件的制备方法，包括：
形成量子点发光层；
在所述量子点发光层的第一表面上形成钝化功能层，所述钝化功能层被配置为修饰所述第一表面；
在所述钝化功能层远离所述量子点发光层一侧形成空穴注入层。
在示例性实施方式中，在所述量子点发光层的第一表面上形成钝化功能层，包括：
通过蒸镀工艺，将金属卤化物在所述量子点发光层的第一表面上形成所述钝化功能层。
在示例性实施方式中，在所述量子点发光层的第一表面上形成钝化功能层，包括：
通过同一蒸镀工艺，在所述量子点发光层的第一表面上，使金属卤化物形成所述钝化功能层，使空穴传输材料形成所述空穴传输层，并使所述钝化功能层的至少部分与所述空穴传输层的至少部分掺杂在一起
在阅读并理解了附图和详细描述后，可以明白其他方面。
附图说明
图1为本公开实施例量子点发光器件的结构示意图一；
图2为本公开实施例量子点发光器件通电后的结构示意图一；
图3为本公开实施例量子点发光器件中钝化离子与第一表面结合后的结构示意图；
图4为本公开实施例量子点发光器件的结构示意图二；
图5为本公开实施例量子点发光器件通电后的结构示意图二；
图6为本公开实施例量子点发光器件的电流密度与电压的线形图；
图7为本公开实施例量子点发光器件的结构示意图三；
图8为本公开实施例量子点发光器件的结构示意图四。
具体实施方式
下文中将结合附图对本公开的实施例进行详细说明。注意，实施方式可以以多个不同形式来实施。所属技术领域的普通技术人员可以很容易地理解一个事实，就是方式和内容可以在不脱离本公开的宗旨及其范围的条件下被 变换为各种各样的形式。因此，本公开不应该被解释为仅限定在下面的实施方式所记载的内容中。在不冲突的情况下，本公开中的实施例及实施例中的特征可以相互任意组合。
在本说明书中，为了方便起见，使用“中部”、“上”、“下”、“前”、“后”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示方位或位置关系的词句以参照附图说明构成要素的位置关系，仅是为了便于描述本说明书和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。构成要素的位置关系根据描述各构成要素的方向适当地改变。因此，不局限于在说明书中说明的词句，根据情况可以适当地更换。
在本说明书中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解。例如，可以是固定连接，或可拆卸连接，或一体地连接；可以是机械连接，或电连接；可以是直接相连，或通过中间件间接相连，或两个元件内部的连通。对于本领域的普通技术人员而言，可以根据情况理解上述术语在本公开中的含义。
本公开中的“约”，是指不严格限定界限，允许工艺和测量误差范围内的数值。
经过本公开发明人的研究发现，量子点发光层与其它功能层的接触界面是影响量子点器件性能的因素之一。主要表现为功能层材料淬灭量子点，或者没有与量子点材料匹配，比如能级不匹配，迁移率不匹配等。
在相关技术中，提高量子点材料稳定性的方法包括改变量子点的核壳结构，引入新的量子点配体等。提高空穴注入能力包括选取能级匹配的空穴传输材料。然而这些方法均存在一定的问题，比如对量子点进行修饰工程比较复杂，并且工艺可控性较差；与量子点能级匹配的空穴传输材料少等问题。
图1为本公开实施例量子点发光器件的结构示意图。如图1所示，本公开实施例量子点发光器件包括依次层叠设置的基底10(Substrate)、第二电极11、电子传输层12(ETL，Electron Transporting Layer)、量子点发光层13(QD EML，Quantum Dot Emitting Layer)、钝化功能层14、空穴传输层15(HTL， Hole Transporting Layer)、空穴注入层16(HIL，Hole Injecting Layer)以及第一电极17。其中，第一电极17为阳极(Anode)，第二电极11为阴极(Cathode)。空穴传输层15的厚度可以为5nm至50nm；空穴注入层16的厚度可以为5nm至50nm；量子点发光层13的厚度可以为10nm至60nm；钝化功能层14的厚度为1nm至20nm。
在示例性实施方式中，量子点发光层13包括靠近空穴注入层16一侧的第一表面131，钝化功能层14设置于第一表面131上，且钝化功能层14靠近量子点发光层13一侧的表面与第一表面131至少部分接触。当本公开实施例量子点发光器件通电发光时，钝化功能层14被配置为修饰第一表面131，钝化第一表面131缺陷，稳定量子点发光层13。
图2为本公开实施例量子点发光器件通电后的结构示意图一。在示例性实施方式中，如图2所示，钝化功能层14至少包括钝化离子141，钝化离子141被配置为与量子点发光层13的第一表面131结合，钝化量子点发光层13的第一表面131缺陷。当本公开实施例量子点发光器件通电发光时，钝化离子141在电场作用下与量子点发光层13的第一表面131结合，钝化量子点发光层13的第一表面131缺陷，钝化后的量子点发光层13的热稳定性会显著提升。相对于没有钝化的量子点发光器件，本公开实施例量子点发光器件的温度耐受性提高了20度。
在示例性实施方式中，钝化离子141可以通过量子点发光层13第一表面131的量子点上的悬挂键与第一表面131结合；和/或，钝化离子141可以吸附在量子点发光层13第一表面131的量子点上；和/或，钝化离子141可以进入量子点发光层13内部靠近空穴注入层16一侧的浅表层，与量子点发光层13的第一表面131结合。
图3为本公开实施例量子点发光器件中钝化离子与第一表面结合后的结构示意图。在示例性实施方式中，如图3所示，以钝化离子141为氯离子为例。当本公开实施例量子点发光器件通电发光时，钝化离子141在电场作用下与量子点发光层13第一表面131的量子点结合，相比量子点表面的油酸等长链配体，钝化离子141能够更好的钝化第一表面131的缺陷。
在示例性实施方式中，如图2所示，钝化功能层14还包括金属离子142， 空穴注入层16包括靠近量子点发光层14一侧的第二表面151。当本公开实施例量子点发光器件通电发光时，金属离子142在电场作用下向空穴注入层16的第二表面151移动，金属离子142设置于空穴传输层15的第二表面151一侧。由于金属离子142的载流子迁移率高于空穴注入层16的载流子迁移率，改善量子点发光层13与空穴注入层16的界面性能，提高量子点发光器件的空穴注入和传输速率。
在示例性实施方式中，当本公开实施例量子点发光器件通电发光时，钝化功能层14中金属离子142相较于钝化离子141更靠近空穴注入层16，使更多的金属离子142能够设置于空穴传输层15的第二表面151一侧；和/或，钝化功能层14中钝化离子141相较于金属离子142更靠近量子点发光层13，使更多的钝化离子141能够与量子点发光层13第一表面131的量子点结合。
在示例性实施方式中，钝化功能层14材料可以采用金属卤化物，比如，钝化功能层14材料可以采用氯化铁、氯化锌等。钝化功能层14中的钝化离子141可以采用卤元素离子，比如，钝化离子141可以采用氟离子、氯离子、溴离子、碘离子、砹离子等。钝化功能层14中的金属离子142可以采用铁离子、锌离子、铝离子等。卤元素离子与量子点发光层13的第一表面131结合后，钝化量子点发光层13的第一表面131缺陷，使得量子点发光层13更加稳定。金属离子142设置于空穴传输层15的第二表面151一侧，修饰空穴传输层15的第二表面151，改善量子点发光层13与空穴传输层15的界面性能，提高空穴注入量子点发光层13的能力。
在示例性实施方式中，量子点发光层13仅在远离电子传输层12的一侧且靠近钝化功能层14的一侧表面与钝化离子141结合，从而可以选择性改善量子点发光层13靠近空穴注入层16一侧表面的空穴注入性能。
在示例性实施方式中，本公开实施例量子点发光器件可以为顶发光，第一电极17为透明导电电极，透明导电电极可以为金属纳米线、氧化铟锡(ITO)、薄银、薄铝等。或者，本公开实施例量子点发光器件可以为底发光。第二电极11为透明导电电极，透明导电电极可以为金属纳米线、氧化铟锡(ITO)、薄银、薄铝等。
在本公开实施例量子点发光器件中，电子传输层12接收来自阴极的电子， 并且可以将供给的电子转移至量子点发光层。电子传输层12还用于促进电子的传输。电子传输层12材料可以采用偶氮化合物纳米颗粒(AZO-NPs)、氧化锌镁合金纳米颗粒(ZMO-NPs)、氧化锌纳米颗粒(ZnO-NPs)、溅射的氧化锌非纳米颗粒以及氧化锌铝合金纳米颗粒。但是本申请的示例性实施方式并不限于此。
在本公开实施例量子点发光器件中，量子点发光层13用于发光。量子点发光层13材料可以选自二元相量子点、三元相量子点或四元相量子点等不限于此。作为举例，二元相量子点选自CdS、CdSe、CdTe、InP、AgS、PbS、PbSe或HgS等不限于此；三元相量子点选自ZnCdS、CuInS、ZnCdSe、ZnSeS、ZnCdTe或PbSeS等不限于此；四元相量子点选自ZnCdS/ZnSe、CuInS/ZnS、ZnCdSe/ZnS、CuInSeS或ZnCdTe/ZnS、PbSeS/ZnS等不限于此。
在本公开实施例量子点发光器件中，空穴传输层15可以起到促进空穴传输的作用。空穴传输层15的材料可选自具有空穴传输能力的有机材料，包括但不限于聚(9,9-二辛基芴-CO-N-(4-丁基苯基)二苯胺)(TFB)、聚乙烯咔唑(PVK)、聚(N,N'双(4-丁基苯基)-N,N'-双(苯基)联苯胺)(poly-TPD)、聚(9,9-二辛基芴-共-双-N,N-苯基-1,4-苯二胺)(PFB)、4,4’,4”-三(咔唑-9-基)三苯胺(TCTA)、4,4'-二(9-咔唑)联苯(CBP)、N,N’-二苯基-N,N’-二(3-甲基苯基)-1,1’-联苯-4,4’-二胺(TPD)、N,N’-二苯基-N,N’-(1-萘基)-1,1’-联苯-4,4’-二胺(NPB)、掺杂石墨烯、非掺杂石墨烯、C60中的一种或多种。空穴传输层15还可选自具有空穴传输能力的无机材料，包括但不限于掺杂或非掺杂的MoOx、VOx、WOx、CrOx、CuO、MoS2、MoSe2、WS2、WSe2、CuS中的一种或多种，但是本申请的示例性实施方式并不限于此。
在本公开实施例量子点发光器件中，空穴注入层16可以促进空穴的注入。空穴注入层16的材料包括但不限于聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸(PEDOT:PSS)、酞菁铜(CuPc)、2,3,5,6-四氟-7,7',8,8'-四氰醌-二甲烷(F4-TCNQ)、2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲(HATCN)、掺杂聚(全氟乙烯-全氟醚磺酸)(PFFSA)的聚噻吩并噻吩(PTT)、过渡金属氧化物、金属硫系化合物中的一种或多种，优选的，过渡金属氧化物包括MoO3、VO2、WO3、CrO3、CuO中的一种或多种，金属硫系化合物包括MoS2、 MoSe2、WS2、WSe2、CuS中的一种或多种，但是本申请的示例性实施方式并不限于此。
在本公开实施例量子点发光器件中，第一电极17为阳极，第一电极17包括氧化物材料、金属材料或氧化物与金属复合材料。例如，氧化物材料包括但不限于氧化铟锡(ITO)、氧化铟锌(IZO)、氧化锌(ZnO)、氧化铟镓(IGO)、氧化镓锌(GZO)、氧化铟镓锌(IGZO)、氧化铟(In2O3)、氧化铝锌(AZO)、镁掺杂氧化锌(MZO)、铝掺杂氧化镁(AMO)、锑掺杂氧化锡(ATO)、氟掺杂二氧化锡(FTO)、氟磷共掺杂二氧化锡(FPTO)中至少一种或多种。但是本申请的示例性实施方式并不限于此。
在本公开实施例量子点发光器件中，第二电极11为阴极，第二电极11包括氧化物材料、金属材料或氧化物与金属复合材料。例如，氧化物材料包括但不限于氧化铟锡(ITO)、氧化铟锌(IZO)、氧化锌(ZnO)、氧化铟镓(IGO)、氧化镓锌(GZO)、氧化铟镓锌(IGZO)、氧化铟(In2O3)、氧化铝锌(AZO)、镁掺杂氧化锌(MZO)、铝掺杂氧化镁(AMO)、锑掺杂氧化锡(ATO)、氟掺杂二氧化锡(FTO)、氟磷共掺杂二氧化锡(FPTO)中至少一种或多种。但是本申请的示例性实施方式并不限于此。
如图1所示，本实施例本实施例量子点发光器件制备过程包括：
(1)在玻璃载板上涂布基底材料，固化成膜，形成基底10。然后在基底10上形成第二电极11。本公开实施例中，基底10可以为刚性基板，也可以为柔性基板。其中，刚性基板包括但不限于玻璃、金属箔片或陶瓷材质中的一种或多种。柔性基板可以采用聚酰亚胺PI、聚对苯二甲酸乙二酯PET或经表面处理的聚合物软膜等材料。
(2)通过旋涂工艺在第二电极11上旋涂30nm厚的电子传输层材料薄膜，然后在10度至50度之间的温度下退火，使电子传输层材料薄膜形成电子传输层12；其中，旋涂的转速为1000-4000r/min，旋涂的时间为10-50秒。
(3)通过旋涂工艺在电子传输层12上旋涂20nm厚的量子点发光层材料薄膜，然后在100度至200度之间的温度下退火，使量子点发光层材料薄膜形成量子点发光层13；其中，旋涂的转速为1000-5000r/min。
(4)通过蒸镀工艺在量子点发光层13的第一表面131形成1至20nm厚的钝化功能层14；其中，钝化功能层14可以采用金属卤化物。
(5)通过旋涂工艺在钝化功能层14上旋涂空穴传输材料薄膜，然后在80度至200度之间的温度下退火，使空穴传输材料薄膜形成空穴传输层15；其中，旋涂的转速为1000-5000r/min。
(6)通过旋涂工艺在空穴传输层15上旋涂空穴注入材料薄膜，然后在100度至250度之间的温度下退火，使空穴注入材料薄膜形成空穴注入层16；其中，旋涂的转速为1000-5000r/min。
通过本公开实施例量子点发光器件的结构以及上述制备流程可以看出，本公开实施例所提供量子点发光器件，通过钝化功能层14钝化量子点发光层13的第一表面131缺陷。钝化后的量子点发光层13的热稳定性会显著提升。并且通过钝化功能层14修饰空穴传输层15的第二表面151，改善量子点发光层13与空穴传输层15的界面性能，提高空穴注入量子点发光层13的能力。
本公开实施例量子点发光器件的制备工艺利用现有成熟的制备设备即可实现，对现有工艺改进较小，能够很好地与现有制备工艺兼容，具有工艺实现简单、生产效率高、生产成本低和良品率高等优点，具有良好的应用前景。
图4为本公开实施例量子点发光器件的结构示意图二。在示例性实施方式中，如图4所示，空穴传输层15位于量子点发光层13与空穴注入层16之间，空穴传输层15的至少部分与钝化功能层14的至少部分掺杂在一起。比如，钝化功能层14与空穴传输层15通过同一蒸镀工艺，使钝化功能层14与空穴传输层15的部分或全部掺杂在一起。本公开实施例将钝化功能层14与空穴传输层15掺杂在一起，能够减小量子点发光器件的厚度，并简化生产工艺，提高生产效率。
在示例性实施方式中，如图4所示，空穴传输层15包括层叠设置的第一子空穴传输层18以及第二子空穴传输层19，第一子空穴传输层18位于空穴传输层15靠近量子点发光层13一侧，第二子空穴传输层19位于空穴传输层15远离量子点发光层13一侧。第一子空穴传输层18与钝化功能层14通过同一蒸镀工艺，掺杂在一起，形成一个掺杂膜层。该掺杂膜层靠近第二子空 穴传输层19一侧表面与第二子空穴传输层19至少部分接触；该掺杂膜层靠近量子点发光层13一侧表面与量子点发光层13至少部分接触。
在示例性实施方式中，第一子空穴传输层18与第二子空穴传输层19可以采用相同的空穴传输材料，也可以采用不同的空穴传输材料，本公开实施例在此不进行限制。
图5为本公开实施例量子点发光器件通电后的结构示意图二。在示例性实施方式中，如图5所示，钝化功能层14包括钝化离子141以及金属离子142，当本公开实施例量子点发光器件通电发光时，在空穴传输层15与钝化功能层14掺杂在一起的掺杂膜层中，钝化离子141在电场作用下向量子点发光层13的第一表面131移动，钝化离子141被配置为与量子点发光层13的第一表面131结合，钝化量子点发光层13的第一表面131缺陷。钝化后的量子点发光层13的热稳定性会显著提升。金属离子142在电场作用下向空穴传输层15的第二表面151移动，金属离子142设置于空穴传输层15的第二表面151一侧，修饰空穴传输层15的第二表面151，改善量子点发光层13与空穴传输层15的界面性能，提高量子点发光层13空穴注入和传输的能力。
在示例性实施方式中，在空穴传输层15与钝化功能层14掺杂在一起的掺杂膜层中，空穴传输层15与钝化功能层14的掺杂比例为1:1至20:1。通过调控空穴传输层15与钝化功能层14的掺杂比例可以大幅度的改善空穴注入和传输的能力。
图6为本公开实施例量子点发光器件的电流密度与电压的线形图。量子点发光器件包括依次层叠设置的基底10、第二电极11、电子传输层12、量子点发光层13、钝化功能层14、空穴传输层15、空穴注入层16以及第一电极17。其中，电子传输层12采用氧化锌纳米颗粒(ZnO-NPs)，电子传输层12的厚度为30nm；量子点发光层13采用CdS，量子点发光层13的厚度为20nm；钝化功能层14采用氯化铁，空穴传输层15采用具有空穴传输能力的有机材料。空穴传输层15包括层叠设置的第一子空穴传输层18以及第二子空穴传输层19，第一子空穴传输层18位于空穴传输层15靠近量子点发光层13一侧，第二子空穴传输层19位于空穴传输层15远离量子点发光层13一侧。第一子空穴传输层18与钝化功能层14通过同一蒸镀工艺，掺杂在 一起，形成一个掺杂膜层，掺杂膜层的厚度为20nm；空穴注入层16采用有机材料，空穴注入层16的厚度为5nm。在实验例1中，调控掺杂膜层中，空穴传输层15(HTL)与钝化功能层14(FeCl 3)的掺杂比例为20：1；在实验例2中，调控掺杂膜层中，空穴传输层15(HTL)与钝化功能层14(FeCl 3)的掺杂比例为20：2；在实验例3中，调控掺杂膜层中，空穴传输层15(HTL)与钝化功能层14(FeCl 3)的掺杂比例为20：3；在实验例4中，调控掺杂膜层中，空穴传输层15(HTL)与钝化功能层14(FeCl 3)的掺杂比例为20：4；在实验例5中，调控掺杂膜层中，空穴传输层15(HTL)与钝化功能层14(FeCl 3)的掺杂比例为20：6；在实验例6中，掺杂膜层中，不掺杂钝化功能层14(FeCl 3)。对上述实验例1至6进行通电实验，测量上述实验例1至6在电压2V至8V时，量子点发光器件的电流密度。实验结果如图6所示。
由实验结果可知，实验例6的量子点发光器件的电流密度在5V时约10mA/cm 2。随着FeCl 3摻杂比例的不断减小，量子点发光器件在相同电压下的电流密度更大，说明在相同电压下，摻杂FeCl 3可以增加量子点发光器件的电流，降低了膜层的界面压降。相同电压下，电流增大说明载流子的注入更多。
图7为本公开实施例量子点发光器件的结构示意图三。在示例性实施方式中，如图7所示，空穴传输层15与钝化功能层14通过同一蒸镀工艺，使钝化功能层14与空穴传输层15的掺杂在一起，形成掺杂膜层。掺杂膜层靠近空穴注入层16一侧表面与空穴注入层16至少部分接触；掺杂膜层靠近量子点发光层13一侧表面与量子点发光层13至少部分接触。本公开实施例将钝化功能层14与空穴传输层15掺杂在一起，能够减小量子点发光器件的厚度，并简化生产工艺，提高生产效率。
图8为本公开实施例量子点发光器件的结构示意图四。在示例性实施方式中，如图8所示，本公开实施例量子点发光器件可以采用正置结构。本公开实施例量子点发光器件包括依次层叠设置的基底10(Substrate)、第二电极11、空穴注入层16(HIL，Hole Injecting Layer)、空穴传输层15(HTL，Hole Transporting Layer)、钝化功能层14、量子点发光层13(QD EML，Quantum Dot Emitting Layer)、电子传输层12(ETL，Electron Transporting Layer)以及第一 电极17。
本公开实施例还提供了一种显示装置，包括前面任一所述的量子点发光器件。该显示装置包括手机、平板电脑、智能穿戴产品(例如智能手表、手环等)、个人数字助理(personal digital assistant，PDA)、车载电脑等。本申请实施例对上述可折叠显示装置的具体形式不做特殊限制。
本公开实施例还提供了一种量子点发光器件的制备方法，包括：
形成量子点发光层；
在量子点发光层的第一表面上形成钝化功能层，所述钝化功能层被配置为修饰所述第一表面；
在所述钝化功能层远离所述量子点发光层一侧形成空穴传输层。
在示例性实施方式中，在所述量子点发光层的第一表面上形成钝化功能层，包括：
通过蒸镀工艺，将金属卤化物在所述量子点发光层的第一表面上形成所述钝化功能层。
在示例性实施方式中，在所述量子点发光层的第一表面上形成钝化功能层，包括：
通过同一蒸镀工艺，在所述量子点发光层的第一表面上，使金属卤化物形成所述钝化功能层，使空穴传输材料形成所述空穴传输层，并使所述钝化功能层的至少部分与所述空穴传输层的至少部分掺杂在一起。
本公开实施例量子点发光器件的制备方法，可以通过蒸镀工艺，在量子点发光层的任一表面形成钝化功能层，选择性的改善量子点发光层表面的性能。
本公开实施例量子点发光器件的制备方法，通过蒸镀工艺形成钝化功能层，能够在制备钝化功能层过程中，不需要引入溶剂，从而避免溶剂对量子点发光层的形貌产生影响；并且通过蒸镀工艺可以精确控制所引入的钝化功能层的厚度，成膜性好。
本公开中的附图只涉及本公开涉及到的结构，其他结构可参考通常设计。在不冲突的情况下，本公开的实施例即实施例中的特征可以相互组合以得到 新的实施例。
本领域的普通技术人员应当理解，可以对本公开的技术方案进行修改或者等同替换，而不脱离本公开技术方案的精神和范围，均应涵盖在本公开的权利要求的范围当中。

Claims (13)

  1. 一种量子点发光器件，包括：量子点发光层以及设置于所述量子点发光层一侧的空穴注入层，所述量子点发光层包括靠近所述空穴注入层一侧的第一表面，所述第一表面上设置有钝化功能层，所述钝化功能层被配置为修饰所述第一表面。
  2. 根据权利要求1所述的量子点发光器件，其中，所述钝化功能层至少包括钝化离子，所述钝化离子被配置为与所述第一表面结合，钝化所述第一表面。
  3. 根据权利要求2所述的量子点发光器件，其中，所述钝化功能层还包括金属离子，所述空穴注入层包括靠近所述量子点发光层一侧的第二表面，所述金属离子设置于所述第二表面一侧。
  4. 根据权利要求3所述的量子点发光器件，其中，所述金属离子相较于所述钝化离子更靠近所述空穴注入层；和/或，所述钝化离子相较于所述金属离子更靠近所述量子点发光层。
  5. 根据权利要求2所述的量子点发光器件，其中，所述钝化离子为卤元素离子。
  6. 根据权利要求1所述的量子点发光器件，还包括空穴传输层，所述空穴传输层位于所述量子点发光层与所述空穴注入层之间，所述空穴传输层的至少部分与所述钝化功能层的至少部分掺杂在一起。
  7. 根据权利要求6所述的量子点发光器件，其中，所述空穴传输层与所述钝化功能层的掺杂比例为1:1至20:1。
  8. 根据权利要求1至7任一所述的量子点发光器件，其中，所述钝化功能层的厚度为1-20nm。
  9. 根据权利要求1至7任一所述的量子点发光器件，还包括第一电极和第二电极，所述第一电极位于所述空穴注入层远离所述量子点发光层一侧，所述第二电极位于所述量子点发光层远离所述空穴注入层一侧。
  10. 一种显示装置，包括权利要求1至9任一所述的量子点发光器件。
  11. 一种量子点发光器件的制备方法，包括：
    形成量子点发光层；
    在所述量子点发光层的第一表面上形成钝化功能层，所述钝化功能层被配置为修饰所述第一表面；
    在所述钝化功能层远离所述量子点发光层一侧形成空穴注入层。
  12. 根据权利要求11所述的量子点发光器件的制备方法，其中，在所述量子点发光层的第一表面上形成钝化功能层，包括：
    通过蒸镀工艺，将金属卤化物在所述量子点发光层的第一表面上形成所述钝化功能层。
  13. 根据权利要求11所述的量子点发光器件的制备方法，其中，在所述量子点发光层的第一表面上形成钝化功能层，包括：
    通过同一蒸镀工艺，在所述量子点发光层的第一表面上，使金属卤化物形成所述钝化功能层，使空穴传输材料形成所述空穴传输层，并使所述钝化功能层的至少部分与所述空穴传输层的至少部分掺杂在一起。
PCT/CN2022/106233 2021-07-26 2022-07-18 量子点发光器件及其制备方法、显示装置 WO2023005708A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202110846230.X 2021-07-26
CN202110846230.XA CN115701227A (zh) 2021-07-26 2021-07-26 量子点发光器件及其制备方法、显示装置

Publications (1)

Publication Number Publication Date
WO2023005708A1 true WO2023005708A1 (zh) 2023-02-02

Family

ID=85086265

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/106233 WO2023005708A1 (zh) 2021-07-26 2022-07-18 量子点发光器件及其制备方法、显示装置

Country Status (2)

Country Link
CN (1) CN115701227A (zh)
WO (1) WO2023005708A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015166006A1 (en) * 2014-04-30 2015-11-05 Cambridge Enterprise Limited Electroluminescent device
CN108258133A (zh) * 2018-01-22 2018-07-06 苏州大学 钙钛矿发光二极管及其制备方法
CN109390476A (zh) * 2017-08-02 2019-02-26 Tcl集团股份有限公司 一种具有氧化石墨烯界面层的qled器件及其制备方法
CN110970569A (zh) * 2018-09-29 2020-04-07 Tcl集团股份有限公司 一种量子点发光二极管及其制备方法
CN111509131A (zh) * 2019-04-28 2020-08-07 广东聚华印刷显示技术有限公司 发光器件及其制备方法和显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015166006A1 (en) * 2014-04-30 2015-11-05 Cambridge Enterprise Limited Electroluminescent device
CN109390476A (zh) * 2017-08-02 2019-02-26 Tcl集团股份有限公司 一种具有氧化石墨烯界面层的qled器件及其制备方法
CN108258133A (zh) * 2018-01-22 2018-07-06 苏州大学 钙钛矿发光二极管及其制备方法
CN110970569A (zh) * 2018-09-29 2020-04-07 Tcl集团股份有限公司 一种量子点发光二极管及其制备方法
CN111509131A (zh) * 2019-04-28 2020-08-07 广东聚华印刷显示技术有限公司 发光器件及其制备方法和显示装置

Also Published As

Publication number Publication date
CN115701227A (zh) 2023-02-07

Similar Documents

Publication Publication Date Title
US11398612B2 (en) Quantum dot light-emitting diode and preparation method therefor, and light-emitting module and display apparatus
Jiang et al. Light-emitting diodes of colloidal quantum dots and nanorod heterostructures for future emissive displays
CN106384765B (zh) 一种量子点发光二极管及其制备方法
KR101476907B1 (ko) 일체형 전도성 기판 및 이를 채용한 전자 소자
CN103904178B (zh) 量子点发光器件
KR101437271B1 (ko) 세슘카보네이트가 블랜딩된 산화아연 전자주입·수송층이 구비된 양자점 발광 다이오드 및 그의 제조방법
CN209515741U (zh) 一种以Al2O3薄膜为缓冲层的量子点发光二极管
CN110112302A (zh) 一种以Al2O3薄膜为缓冲层的量子点发光二极管及其制备方法
KR20130115171A (ko) 일체형 전도성 기판을 채용한 유기 발광 소자
KR101736336B1 (ko) 발광 소자 및 그 제조 방법
CN110416421A (zh) 一种量子点薄膜及量子点发光二极管
Liu et al. Improved performance of inverted quantum dot light-emitting diodes by blending the small-molecule and polymer materials as hole transport layer
WO2019024513A1 (zh) 量子点发光二极管及其制备方法
CN111384255A (zh) 一种量子点发光二极管及其制备方法
Zhang et al. Record high external quantum efficiency of 20% achieved in fully solution-processed quantum dot light-emitting diodes based on hole-conductive metal oxides
TWI667242B (zh) 有機電場發光電晶體（一）
WO2023005708A1 (zh) 量子点发光器件及其制备方法、显示装置
CN111244298A (zh) 一种发光器件及显示器
CN111223999A (zh) 一种量子点发光二极管及其制备方法
WO2021136119A1 (zh) 一种量子点发光二极管及其制备方法
CN112331787B (zh) 金属四苯基卟啉复合物在电子传输材料中的应用、量子点发光器件及其制备方法和发光装置
WO2020215882A1 (zh) 发光结构、显示面板和显示装置
CN116437692A (zh) 一种光电器件及其制备方法
WO2023193427A1 (zh) 一种发光器件及其制备方法、显示装置
WO2023273276A1 (zh) 发光器件及其制备方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 18273263

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE