WO2023005034A1

WO2023005034A1 - Probe card, operation method for probe card, and test system

Info

Publication number: WO2023005034A1
Application number: PCT/CN2021/127227
Authority: WO
Inventors: 胡先德; 钟明修; 杜军鸽
Original assignee: 长鑫存储技术有限公司
Priority date: 2021-07-28
Filing date: 2021-10-29
Publication date: 2023-02-02
Also published as: CN115684682A

Abstract

A probe card, an operation method for the probe card, and a test system. The probe card comprises: a long probe layer (1), the long probe layer (1) comprising multiple partitions (13), and each partition (13) being internally provided with a plurality of probes (11); multiple temperature adjustment modules (2) and multiple height adjustment modules (3) located on the long probe layer (1), each temperature adjustment module (2) being configured to change its own temperature so as to adjust the temperature of the probes (11) in one partition (13), and each height adjustment module (3) being configured to adjust the height of the probes (11) in one partition (13); and a control layer (4), the control layer (4) being configured to control the temperature adjustment modules (2) to adjust the temperature of the probes (11) to a test temperature, then the control layer (4) being further configured to control the height adjustment modules (3) to adjust the height of the probes (11) to a preset height.

Description

Probe card, operation method of probe card and test system

This disclosure is based on the Chinese patent application with the application number 202110858077.2, the application date is July 28, 2021, and the application name is "probe card, operation method and test system of the probe card", and the priority of the Chinese patent application is required. Right, the entire content of this Chinese patent application is hereby incorporated into this disclosure as a reference.

technical field

The present disclosure relates to but not limited to a probe card, an operating method of the probe card and a testing system.

Background technique

The probe card is a testing tool, which should be mainly set up to test the electrical performance of the semiconductor structure before the semiconductor structure is packaged. The principle of use of the probe card is: the probes on the probe card are in contact with the semiconductor structure, thereby connecting the semiconductor structure and the testing machine, and testing the electrical performance parameters of the semiconductor structure by transmitting signals, and then screening out bad semiconductor structures. .

The contact effect between the probe and the semiconductor structure will directly affect the test results of the semiconductor structure, thereby affecting the true presentation of the actual electrical properties of the semiconductor structure. However, the contact effect between the probe and the semiconductor structure is easily affected by various factors and changes. Therefore, the accuracy of the test result of the probe card on the semiconductor structure needs to be further improved.

Contents of the invention

The following is an overview of the subject matter described in detail in this disclosure. This summary is not intended to limit the scope of the claims.

Embodiments of the present disclosure provide a probe card, an operation method of the probe card and a test system, so as to improve the accuracy of test results of the probe card on semiconductor structures.

In the first aspect of an embodiment of the present disclosure, a probe card is provided, including: a long needle layer, the long needle layer includes a plurality of partitions, and each of the partitions has several probes; A plurality of temperature adjustment modules and a plurality of height adjustment modules; each of the temperature adjustment modules is configured to change its own temperature to adjust the temperature of the probes in one of the partitions; each of the height adjustment modules is configured to adjust The height of the probe in a partition; the control layer, the control layer is configured to control the temperature adjustment module to adjust the temperature of the probe to the test temperature, and is also configured to control the height adjustment module to adjust the temperature of the probe to the test temperature. The height of the probe is adjusted to a preset height.

In the second aspect of an embodiment of the present disclosure, there is provided an operation method of a probe card, including: starting the control layer; setting the test temperature and preset height of the probe, and the control layer controls the temperature of the probe Reach the test temperature; after the temperature of the probe reaches the test temperature, the control layer controls the height adjustment module to adjust the height of the probe to the preset height; the height of the probe After reaching the predetermined height, the control layer controls the probe to contact the semiconductor structure, and tests the semiconductor structure.

The third aspect of the embodiments of the present disclosure provides a test system, including: the aforementioned probe card; and a chuck.

Other aspects will be apparent to others upon reading and understanding the drawings and detailed description.

Description of drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description serve to explain the principles of the disclosure. Apparently, the drawings in the following description are only some embodiments of the present disclosure, and those skilled in the art can obtain other drawings according to these drawings without creative efforts.

One or more embodiments are exemplified by the pictures in the corresponding drawings, and these exemplifications do not constitute a limitation to the embodiments. Elements with the same reference numerals in the drawings represent similar elements. Unless otherwise stated, the drawings in the drawings are not limited to scale.

FIG. 1 is a top view of a long needle layer in a probe card provided by an embodiment of the present disclosure;

2 is a schematic diagram of a partition in a probe card provided by an embodiment of the present disclosure;

FIG. 3 is a schematic diagram of a temperature raising layer in a probe card provided by an embodiment of the present disclosure;

FIG. 4 is a schematic diagram of a cooling layer in a probe card provided by an embodiment of the present disclosure;

5 is a schematic diagram of a height adjustment module in a probe card provided by an embodiment of the present disclosure;

FIG. 6 is a flow chart of the operation method of the probe card provided by another embodiment of the present disclosure.

Detailed ways

The accuracy of the test results of the probe card on the semiconductor structure needs to be improved. After analysis, it is found that the main reason is that: the probe on the probe card is easily affected by the temperature, which will cause thermal expansion and contraction, and then produce deformation; The heights of the probes in different regions of the needle card may be different, therefore, the contact effects between the probes on the same probe card and the semiconductor structure may be different. If the contact depth between the probe and the semiconductor structure is too shallow, there may be a problem of poor contact, which will affect the accuracy of the test structure; if the contact depth between the probe and the semiconductor structure is too deep, the probe may puncture the semiconductor structure, thereby damage to semiconductor structures.

An embodiment of the present disclosure provides a probe card, including: a long needle layer, the long needle layer includes multiple partitions, and each partition has several probes; multiple temperature adjustment modules and multiple height adjustment modules located on the long needle layer module; control layer, the control layer is set to control the temperature adjustment module to adjust the temperature of the probe to the test temperature, and is also set to control the height adjustment module to adjust the height of the probe to a preset height. That is, a temperature adjustment module controls the temperature of the probes in a partition, so that the deformation of the probes due to excessive temperature changes can be avoided; a height adjustment module can automatically adjust the height of the probes in a partition, so that the probes can be adjusted The height is relatively consistent; the contact effect between the probe and the semiconductor structure can be stabilized, thereby improving the accuracy of the test results of the probe card on the semiconductor structure; and the degree of automation of temperature adjustment and height adjustment can be improved.

In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the embodiments of the present application will be described in detail below with reference to the accompanying drawings. However, those of ordinary skill in the art can understand that in each embodiment of the application, many technical details are provided for readers to better understand the application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in this application can also be realized.

An embodiment of the present disclosure provides a probe card. FIG. 1 is a top view of a long needle layer in a probe card; FIG. 2 is a schematic diagram of a partition in a probe card; FIG. 3 is a schematic diagram of a heating layer in a probe card; Fig. 4 is a schematic diagram of the cooling layer in the probe card; Fig. 5 is a schematic diagram of the height adjustment module in the probe card; referring to Fig. 1-Fig. 5, the probe card includes: long needle layer 1, long needle layer 1 includes multiple A plurality of subregions 13, each subregion 13 has several probes 11; a plurality of temperature adjustment modules 2 and a plurality of height adjustment modules 3 located on the long needle layer 1; each temperature adjustment module 2 is set to change its own temperature, to adjust The temperature of the probe 11 in a zone 13; each height adjustment module 3 is set to adjust the height of the probe 11 in a zone 13; the control layer 4, the control layer 4 is set to control the temperature adjustment module 2 to adjust the temperature of the probe 11 After the temperature is adjusted to the test temperature, it is also configured to control the height adjustment module 3 to adjust the height of the probe 11 to a preset height.

The probe card will be specifically described below.

When using the probe card to test the semiconductor structure, the temperature of the semiconductor structure itself needs to meet the test temperature requirements, and the probe card can test the electrical properties of the semiconductor structure under different temperature conditions. The semiconductor structure is placed on a chuck (not shown), which is configured to change the ambient temperature of the semiconductor structure under test. The chuck can carry the semiconductor structure and can also provide a heat source so that the temperature of the semiconductor structure reaches the test temperature. The process of controlling the temperature of the semiconductor structure by the chuck includes two stages. In the first stage, the chuck needs to be used to preheat the semiconductor structure in space, that is, the chuck is not in direct contact with the semiconductor structure, but the temperature of the semiconductor structure itself is indirectly changed by changing the ambient temperature. In the second stage, the semiconductor structure is placed on the chuck, and the semiconductor structure directly heats the chuck, so that the temperature of the semiconductor structure reaches the test temperature and maintains a stable state. The duration of the two phases is approximately three to four hours. When the chuck changes the ambient temperature and the temperature of the semiconductor structure itself, the chuck will also change the temperature of the probe, so that the temperature of the probe is close to the temperature of the semiconductor structure.

Referring to FIG. 1 , in some embodiments, the semiconductor structure tested by the probe card is a wafer, and the shape of the needle layer 1 in the probe card can be consistent with the shape of the semiconductor structure, for example, they are all circular. The long needle layer 1 has a plurality of partitions 13, and each partition 13 is independent of each other.

Fig. 2 is a schematic diagram of a partition 13 in the probe card, with reference to Fig. 1-Fig. 2, the long needle layer 1 includes a plurality of support layers 12, each support layer 12 is located in a partition 13; the support layer 12 has opposite two sides , the probe 11 is fixed on one side of the support layer 12 , the temperature adjustment module 2 is fixed on the other side of the support layer 12 , and the height adjustment module 3 is fixed on the side of the temperature adjustment module 2 facing away from the support layer 12 . That is, the temperature adjustment module 2 and the height adjustment module 3 are stacked on the supporting layer 12 .

With reference to Fig. 3-Fig. 5, the control layer 4 communicates with the altitude adjustment module 3 and the temperature adjustment module 2 respectively, and is configured to control the operation of the altitude adjustment module 3 and the temperature adjustment module 2. Since the partitions 13 (with reference to Fig. 1 ) are mutually independent, and each partition 13 has a temperature regulation module 2 and an altitude regulation module 3, the control layer 4 can control the height regulation module 3 and the temperature regulation module 2 of each partition 13 Individual control is performed to further reduce the difference in height and temperature of different partitions 13 to ensure good contact effect between the probe 11 and the semiconductor structure, thereby improving the accuracy of the test results of the probe card.

In some embodiments, the control layer 4 is configured to control the temperature adjustment module 2 to adjust the temperature of the probe 11 to the test temperature, and then to control the height adjustment module 3 to adjust the height of the probe 11 to a preset height.

The chuck can regulate the temperature of the probe 11 to a certain extent, but the chuck is not in direct contact with the long needle layer 1. If the chuck is used alone to control the temperature of the probe 11, it is difficult to ensure the accuracy of temperature control. And the temperature control regulation time is too long. Using the temperature adjustment module 2 to directly contact the long needle layer 1 is beneficial to ensure the accuracy and stability of the temperature control of the probe 11 and can shorten the temperature adjustment time. When the probe 11 reaches the test temperature, that is, when the probe 11 is in a constant temperature state, the deformation of the probe 11 will also stop, and the length of the probe 11 can remain unchanged. The height adjustment module 3 adjusts the height of the probe 11 to a preset height, which can facilitate keeping the end of the probe 11 at the same horizontal position. When the end of the probe 11 is subsequently contacted with the semiconductor structure, different probes and semiconductor structures The contact effect of the structure can also be kept relatively consistent.

The height adjustment module 3 , the temperature adjustment module 2 and the control layer 4 will be described in detail below.

Referring to FIG. 2 , the temperature regulation module 2 includes a heating layer 21 and a cooling layer 22 , the heating layer 21 is configured to raise the temperature of the probe 11 , and the cooling layer 22 is configured to lower the temperature of the probe 11 . The temperature raising layer 21 and the temperature reducing layer 22 are laminated, and the temperature raising layer 21 is located between the long needle layer 1 and the temperature reducing layer 22 . The heating layer 21 is in direct contact with the long needle layer 1 . In the testing process of semiconductor structures, high temperature testing is more common than low temperature testing, and the heating layer 21 is closer to the long needle layer 1 than the cooling layer 22 , which can improve the heating efficiency of the probe 11 .

Referring to FIG. 3 , there is a resistance wire 211 inside the temperature raising layer 2 , and the resistance wire 211 is configured to increase the temperature of the temperature raising layer 2 itself, and increase the temperature of the probe 11 through heat transfer. The material of the temperature raising layer 2 includes a ceramic material. In some embodiments, the temperature raising layer 2 has a casing for containing the resistance wire 211, and the material of the casing is a ceramic material. The ceramic material has a large specific heat capacity, which can prevent sudden changes in the temperature of the probe 11 (refer to FIG. 2 ), thereby reducing the deformation of the probe 11 and prolonging the service life of the probe 11 .

4, the probe card also includes a refrigerator 224, an inlet pipe 221 and an outlet pipe 222. There is a cooling pipe 223 in the cooling layer 22. The inlet pipe 221, the cooling pipe 223 and the outlet pipe 222 are connected end to end in sequence. The refrigerator 224 is set as The cooling medium is circulated through the introduction pipe 221 , the cooling pipe 223 and the outlet pipe 222 . The material of the cooling layer 22 includes ceramic material. In some embodiments, the cooling layer 22 has a casing for accommodating the cooling pipe 223, and the material of the casing is a ceramic material. The ceramic material has a large specific heat capacity, which can prevent sudden changes in the temperature of the probe 11 (refer to FIG. 2 ), thereby reducing the deformation of the probe 11 and prolonging the service life of the probe 11 .

Referring to FIG. 5, each height adjustment module 3 is configured to adjust the height of the probe 11 (refer to FIG. 2) in a subregion 13 (refer to FIG. 1), specifically: each height adjustment module 3 is configured to change the height of a probe 11 (refer to FIG. The height of the supporting layer 12 (refer to FIG. 2 ) can be adjusted to adjust the height of the probes 11 in a partition 13 . The height adjustment module 3 directly adjusts the height of the support layer 12. During the process of changing the height of the support layer 12, the probe 11 moves together with the support layer 12, and then the height changes. During the process of adjusting the height of the supporting layer 12 by the height adjustment module 3 , the height of the temperature adjustment module 2 also changes together.

The height adjustment module 3 includes a driving layer 32 and a buffer layer 31. The driving layer 32 is configured to drive the buffer layer 31 to perform lifting, and the buffer layer 31 is configured to drive the probe 11 (refer to FIG. 2 ) to lift. That is, the buffer layer 31 drives the supporting layer 12 to lift, and then drives the probe 11 to lift.

In some embodiments, the driving layer 32 may be a motor, the buffer layer 31 may be a screw, the motor is configured to drive the screw to perform lifting, and the screw is configured to drive the probe 11 to lift. In other embodiments, the buffer layer 31 may also be a slider, and the driving layer 32 is configured to drive the slider to move up and down, thereby changing the height of the probe 11 .

Referring to Fig. 3-Fig. 5 together, the control layer 4 has a control circuit and a power supply module, and the control circuit is configured to control the work of the height adjustment module 3, the heating layer 21 and the cooling layer 22. The power supply module provides power for the height adjustment module 3, the heating layer 21 and the cooling layer 22. 224 power supply.

In some embodiments, the control layer 4 is also configured to control the height adjustment module 3 to increase the height difference between the probe 11 and the chuck, and after the height difference between the probe 11 and the chuck increases, the control layer 4 is also configured to control the temperature The regulating module 3 increases its own temperature to regulate the temperature of the probe 11 . During testing, the control layer 4 can also control the action of the probe 11; during the action of the probe 11, the height difference between the probe 11 and the chuck will change. Because the chuck can provide heat for the test environment, when the height adjustment module 3 increases the height difference between the probe 11 and the chuck, the heat transferred from the chuck to the probe 11 decreases, so the temperature of the probe 11 itself may decrease. drop, resulting in deformation. After the height difference between the probe 11 and the chuck increases, the control layer 4 controls the temperature adjustment module 2 to increase its own temperature, thereby increasing the heat transferred to the probe 11, which is beneficial to keep the temperature of the probe 11 stable, thereby preventing the probe 11 from Deformation occurs due to needle cold phenomenon, thereby ensuring the needle mark stability of the probe.

In some other embodiments, referring to FIG. 2 , the probe card further includes: a height measurement module 51, which is configured to measure the heights of the probes 11 of different partitions 13; the height measurement module 51 is configured to transmit the height to the control layer 4 For the height of the probe 11, the control layer 4 is configured to generate a height compensation value based on the height of the probe 11; the height adjustment module 3 is configured to adjust the height of the probe 11 based on the height compensation value. Each subregion 13 has a height measurement module 51 , so that the height of the probe 11 of a subregion 13 can be measured independently.

The altitude measurement module 51 may be an infrared scanner. The height adjustment module 3 is also configured to drive the infrared scanner to move up and down along the height direction of the probe 11 . The probe card also includes a guide rail 52 , the extension direction of the guide rail 52 is the height direction of the probe 11 , and the height adjustment module 3 is configured to drive the infrared scanner to move up and down along the guide rail 52 .

In some embodiments, after the temperature of the probes 11 is stabilized, the infrared scanner scans the heights of the probes 11 of all subregions 13, and feeds back the heights of the probes 11 to the control layer 4; The height of the needle 11 is set to a preset height, and the height of the probes 11 of other partitions 13 is compared with the height of the probes 11 of the partition 13 to obtain a height difference; the height adjustment module 3 is subsequently used to adjust the height according to the height difference, so that all The heights of the probes 11 in the partition 13 are kept consistent, that is, the ends of the probes 11 are kept at the same level.

In order not to affect the testing work of the probe 11, the infrared scanner descends when the height of the probe 11 needs to be measured, rises and then returns to the origin after the measurement is completed, so that the height of the infrared scanner is higher than the height of the top of the probe 11.

In other embodiments, the height measurement module 51 may also be a laser scanner.

In summary, the height adjustment module 3 of each subregion 13 can adjust the height of the probe 11 of the subregion 13, and the temperature adjustment module 2 of each subregion 13 can adjust the temperature of the probe 11 of the subregion 13, so that The probe 11 has a good contact condition with the semiconductor structure, thereby improving the accuracy of the test result.

Another embodiment of the present disclosure provides a method for operating a probe card. The operation method in this embodiment can be realized by the probe card provided in the foregoing embodiments. For the same or similar parts of this embodiment as the foregoing embodiments, please refer to Detailed description of the preceding embodiments. FIG. 6 is a flow chart of the operation method of the probe card, which will be described in detail below with reference to the accompanying drawings.

S1: Start the control layer.

The control layer includes a control circuit and a power supply module. The control circuit sends control signals to each functional module of the probe, and the power supply module provides power to each functional module of the probe to ensure the normal operation of each functional module.

S2: Set the test temperature and preset height of the probe.

During testing of the semiconductor structure, the test temperature of the probe is the same as the target temperature that the semiconductor structure needs to reach. In some embodiments, in the BI aging test (burn-in test), the temperature of the semiconductor structure and the probe needs to reach 125 ° C; in the HT high temperature test (high temperature test), the temperature of the semiconductor structure and the probe are both It needs to reach 78°C; in the LT low temperature test (Low temperature test), the temperature of the semiconductor structure and the probe needs to reach (-10～-40)°C; in other embodiments, the test temperature of the probe is the same as that of the semiconductor structure The required target temperature can be slightly different, but the difference should be kept within a small range to improve the accuracy of the test results.

The preset height of the probe can be understood as the preset height of the probe end. When the height of all the probe ends reaches a uniform preset height, the contact effect between different probes and the semiconductor structure can be guaranteed to be relatively consistent, thereby reducing the Differences in test results for different probes.

S3: the control layer controls the temperature of the probe to reach the test temperature.

The control layer can increase the temperature of the probe by controlling the heating layer, or control the cooling layer to reduce the temperature of the probe, and finally make the temperature of the probe reach the test temperature and keep it stable.

After the temperature of the probe reaches the test temperature, S4 is also included: the control layer controls the height adjustment module to adjust the height of the probe to a preset height.

When the temperature of the probe reaches the test temperature, the temperature of the probe will remain stable, so the probe is not easily deformed. Adjust the height of the probe, and the height of the probe will be stable at the preset height.

In some embodiments, the probe card also has a height measurement module, and the control layer controls the height adjustment module to adjust the height of the probe to a preset height, including: the height measurement module measures the height of the probes in different partitions; The height of the probe is set to the preset height; the control layer calculates the difference between the height of the probes in other partitions and the preset height, and generates a height compensation value; the height adjustment module makes the height of the probe reach the preset height based on the height compensation value. set height. The height measurement module, the height adjustment module and the control layer cooperate with each other to improve the automation and accuracy of the probe height adjustment.

The height measurement module is an infrared scanner; the height measurement module measures the height of probes in different partitions, including: starting the height adjustment module, which drives the infrared scanner to descend along the height direction of the probe to test the height of the probe.

In some embodiments, before controlling the probe to test the semiconductor structure, it further includes: the height adjustment module drives the infrared scanner to rise along the height direction of the probe, so that the height of the infrared scanner is higher than that of the top of the probe. It can prevent the infrared scanner from affecting the test work of the probe.

After the height of the probe reaches the preset height, S5 is also included: the control layer controls the contact between the probe and the semiconductor structure, and tests the semiconductor structure.

In summary, the test temperature and preset height of the probe are set, the control layer controls the temperature adjustment module to adjust the temperature of the probe based on the test temperature, and the control layer controls the height adjustment module to adjust the height of the probe based on the preset height. The temperature and height of the probe can be kept in a stable state, so that the probe and the semiconductor structure have a good contact condition, thereby improving the accuracy of test results.

Yet another embodiment of the present disclosure provides a test system, including: the probe provided in the foregoing embodiments, and a chuck. The chuck can support the semiconductor structure, and can also change the ambient temperature so that the temperature of the semiconductor structure reaches the test temperature. The chuck can also provide a certain heat source for the probe, and the temperature adjustment module of the probe card can be controlled according to the heat transfer trend of the chuck, so that the temperature adjustment module can match the chuck, thereby ensuring the stability of the probe temperature , so that the probe has a good contact effect with the semiconductor structure.

It should be understood that the present disclosure is not limited in its application to the detailed construction and arrangement of components set forth in this specification. The disclosure is capable of other embodiments and of being practiced and carried out in various ways. The foregoing variations and modifications fall within the scope of the present disclosure. It shall be understood that the disclosure disclosed and defined in this specification extends to all alternative combinations of two or more of the individual features mentioned or evident in the text and/or drawings. All of these different combinations constitute alternative aspects of the disclosure. The embodiments described in this specification describe the best modes known for carrying out the disclosure and will enable others skilled in the art to utilize the disclosure.

Industrial Applicability

The probe card, the operation method of the probe card and the test system provided in the present disclosure can improve the accuracy of the test result of the probe card on the semiconductor structure.

Claims

A probe card configured to test a semiconductor structure, comprising:

a long needle layer, the long needle layer includes a plurality of subregions, each of which has several probes;

A plurality of temperature adjustment modules and a plurality of height adjustment modules located on the long needle layer; each of the temperature adjustment modules is configured to change its own temperature to adjust the temperature of the probes in one of the partitions; each the height adjustment module is configured to adjust the height of the probes in one of the partitions;

A control layer, the control layer is configured to control the temperature adjustment module to adjust the temperature of the probe to the test temperature, and then control the height adjustment module to adjust the height of the probe to a preset height.
The probe card according to claim 1, wherein the long needle layer comprises a plurality of support layers, each of the support layers is located in one of the partitions; the support layer has two opposite sides, and the probe fixed on one side of the support layer, the temperature adjustment module is fixed on the other side of the support layer, and the height adjustment module is fixed on the side of the temperature adjustment module facing away from the support layer;

Each of the height adjustment modules is configured to adjust the height of the probes in one of the subregions, including: each of the height adjustment modules is configured to change the height of the support layer in one of the subregions to adjust The height of the probes within one of the partitions.
The probe card according to claim 1, wherein, during testing, the semiconductor structure is placed on a chuck, the chuck is configured to change the ambient temperature for testing the semiconductor structure, and the control layer is further configured to controlling the height adjustment module to increase the height difference between the probe and the chuck, and after the height difference between the probe and the chuck increases, the control layer is also configured to control the temperature adjustment module Increase the temperature of itself to regulate the temperature of the probe.
The probe card according to claim 1, wherein the temperature adjustment module comprises a temperature-raising layer and a temperature-lowering layer, the temperature-raising layer is set to increase the temperature of the probe, and the temperature-lowering layer is set to lower the temperature of the probe temperature.
The probe card according to claim 4, wherein the heating layer and the cooling layer are stacked, and the heating layer is located between the long needle layer and the cooling layer.
The probe card according to claim 4, wherein a resistance wire is provided in the heating layer, a power supply module is provided in the control layer, and the power supply module is configured to supply power to the resistance wire.
The probe card according to claim 4, further comprising a refrigerator, an inlet pipe and an outlet pipe, a cooling pipe is provided in the cooling layer, and the inlet pipe, the cooling pipe and the outlet pipe are connected end to end in sequence, so that The refrigerator is configured to circulate the cooling medium through the inlet pipe, the cooling pipe and the outlet pipe.
The probe card according to claim 4, wherein the material of the temperature raising layer includes a ceramic material, and the material of the cooling layer includes a ceramic material.
The probe card according to claim 1, wherein the height adjustment module includes a driving layer and a buffer layer, the driving layer is configured to drive the buffer layer to perform lifting, and the buffer layer is configured to drive the probe Lift and lower.
The probe card according to claim 9, wherein the driving layer includes a motor, the buffer layer includes a screw, the motor is configured to drive the screw to perform lifting, and the screw is configured to drive the probe to perform lift.
The probe card according to claim 1, further comprising: a height measurement module, the height measurement module is configured to measure the heights of the probes in different partitions; the height measurement module is configured to report to the control layer The height of the probe is transmitted, the control layer is configured to generate a height compensation value based on the height of the probe; the height adjustment module is configured to adjust the height of the probe based on the height compensation value.
The probe card according to claim 11, wherein the height measuring module comprises: an infrared scanner.
The probe card according to claim 12, wherein the height adjustment module is further configured to drive the infrared scanner to move up and down along the height direction of the probe.
A method for operating a probe card, providing the probe card according to any one of claims 1-13, comprising:

start the control layer;

setting the test temperature and preset height of the probe,

The control layer controls the temperature of the probe to reach the test temperature;

After the temperature of the probe reaches the test temperature, the control layer controls the height adjustment module to adjust the height of the probe to the preset height;

After the height of the probe reaches the preset height, the control layer controls the probe to be in contact with the semiconductor structure to test the semiconductor structure.
According to the operation method of the probe card according to claim 14, the probe card also has a height measurement module, and the control layer controls the height adjustment module to adjust the height of the probe to a preset height, including:

the height measuring module measures the heights of the probes of different partitions;

setting the height of the probes of one of the partitions to the preset height;

The control layer calculates the difference between the heights of the probes in other partitions and the preset height, and generates a height compensation value;

The height adjustment module makes the height of the probe reach the preset height based on the height compensation value.
The method for operating a probe card according to claim 15, wherein the height measurement module is an infrared scanner;

The height measurement module measures the heights of the probes in different partitions, including: starting the height adjustment module, and the height adjustment module drives the infrared scanner to descend along the height direction of the probes to test the height of the probe;

Before controlling the probe to test the semiconductor structure, it also includes: the height adjustment module drives the infrared scanner to rise along the height direction of the probe, so that the height of the infrared scanner is higher than the height of the tip of the probe.
A test system comprising:

The probe card according to any one of claims 1-13;

Chuck.