WO2022267492A1 - 外延掺杂气体的稀释装置 - Google Patents

外延掺杂气体的稀释装置 Download PDF

Info

Publication number
WO2022267492A1
WO2022267492A1 PCT/CN2022/076525 CN2022076525W WO2022267492A1 WO 2022267492 A1 WO2022267492 A1 WO 2022267492A1 CN 2022076525 W CN2022076525 W CN 2022076525W WO 2022267492 A1 WO2022267492 A1 WO 2022267492A1
Authority
WO
WIPO (PCT)
Prior art keywords
pipeline
gas
epitaxial
flow control
diluting
Prior art date
Application number
PCT/CN2022/076525
Other languages
English (en)
French (fr)
Inventor
顾广安
陈建纲
王俊杰
Original Assignee
上海晶盟硅材料有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 上海晶盟硅材料有限公司 filed Critical 上海晶盟硅材料有限公司
Priority to JP2023553505A priority Critical patent/JP2024509173A/ja
Priority to EP22827001.3A priority patent/EP4361323A1/en
Publication of WO2022267492A1 publication Critical patent/WO2022267492A1/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state

Definitions

  • the utility model relates to epitaxial growth equipment, in particular to a dilution device for epitaxial doping gas.
  • Doping is an important step in the epitaxial growth process. During epitaxial growth, it is necessary to control and ensure the conductivity type and resistivity of the epitaxial layer by controlling doping.
  • the main dopant sources commonly used in silicon epitaxial production are phosphine, arsine, and diborane, etc., which enter the epitaxial reaction chamber in the gas phase together with the silicon source and the main gas flow forming the epitaxial, and are mixed together with the epitaxial growth. epitaxial layer.
  • the doping amount in the silicon epitaxial layer can be controlled, that is, the resistivity of the epitaxial layer can be controlled. Therefore, the long-term stability of the concentration and flow rate of the dopant gas determines the stability of the resistivity of the epitaxial layer.
  • the gas in the dopant gas cylinder and the diluent gas cylinder is mixed and diluted in a certain proportion and then output to the reaction chamber for epitaxy.
  • the concentration of doped gas in steel cylinders will inevitably fluctuate during use, and there will inevitably be differences in the concentration between cylinders. Whether it is during the use of a single cylinder or after the cylinder is replaced, the doping concentration cannot be guaranteed. stability, which will directly affect the quality of the product.
  • the main purpose of the utility model is to provide a diluting device capable of providing long-term stable doping concentration of epitaxial doping gas.
  • the utility model provides a dilution device for epitaxial doping gas, including:
  • the first pipeline for passing the doping gas is provided with a concentration detection mechanism and a first flow control mechanism,
  • the controller is in signal connection with the concentration detection mechanism and the first flow control mechanism.
  • a second line for passing the dilution gas is also included.
  • a second flow control mechanism is provided on the second pipeline, and the controller is connected to the second flow control mechanism in a signal manner.
  • first and second control valves are respectively arranged at the front and rear positions of the second flow control mechanism, and the first and second control valves are connected to the controller for signal .
  • it also includes a gas mixing mechanism and a third pipeline, the outlet of the first pipeline and the outlet of the second pipeline are connected to the inlet of the mixing mechanism, and the outlet of the mixing mechanism is connected to the inlet of the third pipeline .
  • the gas mixing mechanism uses an accumulator.
  • the third pipeline is provided with one or more of a pressure regulator, a pressure sensor, a vent pipeline, and a valve.
  • a third control valve and a fourth control valve are respectively arranged at the front and rear positions of the first flow control mechanism, and the third and fourth control valves are connected to the controller for signal .
  • an instrument gas pipeline is included, an instrument gas control valve is arranged on the instrument gas pipeline, and the controller is signally connected to the instrument gas control valve.
  • a temperature regulator is included, and the temperature regulator is configured to regulate the ambient temperature of the concentration detection mechanism.
  • the dopant gas diluted by the dilution device of the utility model has a long-term stable concentration, thereby ensuring stable resistivity of the epitaxial layer.
  • Fig. 1 is a kind of structure diagram of the dilution device of the present utility model.
  • the device for diluting the epitaxial dopant gas in this embodiment mainly includes: a first pipeline 100 and a controller 400 for passing the dopant gas.
  • the first pipeline 100 is provided with a concentration detection mechanism 101 and The first flow control mechanism 102 and the controller 400 are in signal connection with the concentration detection mechanism 101 and the first flow control mechanism 102 .
  • the controller 400 sends a control signal to the first flow control mechanism 102, and the control from The flow rate of the doping gas sent out from the outlet of the first pipeline 100 is to stabilize the doping concentration of the diluted doping gas.
  • the concentration detection mechanism 101 can be a concentration sensor
  • the first flow control mechanism 102 can be a flow control valve
  • the controller 400 can be a programmable controller.
  • a second pipeline 200 for passing the dilution gas is also included.
  • the second pipeline 200 is provided with a second flow control mechanism 201 , and the controller 400 is connected to the second flow control mechanism 201 by signals.
  • the second pipeline 200 transports the dilution gas used to dilute the dopant gas.
  • the first flow control mechanism 102 can control the volume of the dopant gas in the first pipeline 100.
  • the second flow control mechanism 201 can also send a control signal to the second flow control mechanism 201 to control the flow rate of the diluting gas sent out from the outlet of the second pipeline 200, and at the same time, adjusting the flow rate of the doping gas and the diluting gas can improve the adjustment efficiency, so that the doping concentration more stable.
  • the second flow control mechanism 201 can also adopt a flow control valve.
  • a gas mixing mechanism 301 and a third pipeline 300 are also included, the outlet of the first pipeline 100 and the outlet of the second pipeline 200 are connected to the inlet of the mixing mechanism, and the outlet of the mixing mechanism is connected to the third pipeline. Inlet connection to Road 300.
  • the gas mixing mechanism 301 uses an accumulator. On the one hand, the accumulator can be used to prevent large fluctuations in pressure. On the other hand, the pressure accumulated in the accumulator can help the full mixing of the doping gas and the diluting gas, thereby enhancing the mixing effect.
  • One or more of a pressure regulator 304 , a pressure sensor 303 , an emptying pipeline 305 , and a manual valve 306 are provided on the third pipeline 300 .
  • the vent pipeline 305 is provided to discharge the remaining gas in the pipeline after the epitaxy is completed.
  • a calibration gas is introduced from the inlet of the first channel, and the calibration gas passes through the concentration detection mechanism 101 and is discharged from the vent pipeline 305.
  • the third and fourth control valves 103 and 104 are respectively arranged at the front and rear positions of the first flow control mechanism 102, the third and fourth control valves 103, 104 is in signal connection with the controller 400 .
  • first and second control valves 202 and 203 are respectively arranged at the front and rear positions of the second flow control mechanism 201, and the first and second control valves 202 and 203 are connected with the control tor 400 signal connection.
  • the third and fourth control valves 103, 104, first and second control valves at both ends of the first flow control mechanism 102 and the second flow control mechanism 201 can be closed.
  • Two control valves 202 and 203 to prevent the concentration of the diluted dopant gas in the subsequent accumulator from being affected by the leakage of the first and second flow control mechanisms 201 .
  • an instrument gas pipeline is also included, and an instrument gas control valve 500 is arranged on the instrument gas pipeline, and the controller 400 is connected to the instrument gas control valve 500 by signal.
  • the instrument gas control valve 500 is controlled by the controller 400 to improve the degree of automation of the equipment.
  • This embodiment also includes a temperature regulator configured to adjust the ambient temperature of the concentration detection mechanism 101 .
  • a temperature regulator configured to adjust the ambient temperature of the concentration detection mechanism 101 .
  • a manual valve 105 and a pressure sensor 106 can also be set on the first pipeline 100
  • a manual valve 204 and a pressure sensor 205 can be set on the second pipeline
  • a manual valve 307 can be set on the vent pipeline 305, so that the dilution
  • the device has the possibility of manual adjustment.
  • the dopant gas passed into the inlet of the first pipeline 100 such as phosphine
  • a dilution gas such as hydrogen
  • the concentration detection mechanism 101 will detect
  • the phosphine concentration value is sent to the controller 400, and the controller 400 adjusts the first flow control mechanism 102 and the second flow control mechanism 201 according to the preset dilution ratio to achieve the preset dilution ratio, and the phosphine and hydrogen enter the gas mixture Mixing is carried out in the mechanism 301, and the pressure is stabilized.
  • the diluted doping gas is sent into the reaction chamber for doping through the pressure regulator 304 on the third pipeline 300 to adjust the pressure.
  • the experimental results in the above table show that the resistivity fluctuation of the epitaxial wafer produced by the gas supply of the dilution device of the utility model is much smaller than that of the original gas supply system.
  • the reason is that the dopant gas with long-term stable dopant concentration can be obtained by adopting the dilution device of the utility model.
  • the dilution device of the utility model can ensure long-term stable supply of concentration, can obtain more stable epitaxial resistivity, is suitable for mass production, and is suitable for popularization and use in production.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

一种外延掺杂气体的稀释装置，包括用于通过掺杂气体的第一管路，第一管路上设置有浓度检测机构和第一流量控制机构，以及控制器，与浓度检测机构和第一流量控制机构信号连接。该稀释装置提供的经稀释的掺杂气体具有稳定的浓度，从而保证得到的外延层具有稳定的电阻率。

Description

外延掺杂气体的稀释装置 技术领域
本实用新型涉及外延生长设备，具体涉及外延掺杂气体的稀释装置。
背景技术
掺杂是外延生长过程中的重要步骤，在外延生长时，需要通过控制掺杂来控制和保证外延层的导电类型和电阻率。目前硅外延生产中常用的主掺杂质源是磷烷、砷烷和乙硼烷等,它们以气相形式与硅源及组成外延的主气流进入外延反应室,在外延生长的同时一道掺入外延层。通过控制掺杂浓度和流量就能控制硅外延层中的掺杂量即控制外延层的电阻率。因此，掺杂气体的浓度和流量的长期稳定性决定了外延层电阻率的稳定性。
在现有技术中，一般通过掺杂气钢瓶和稀释气钢瓶中的气体经过一定比例的混合稀释后输出至外延用的反应腔中。钢瓶掺杂气在使用的过程中其浓度难免发生波动，而钢瓶与钢瓶之间的浓度也难免存在差别，无论是在单个钢瓶的使用过程中，还是在钢瓶更换后，都无法保证掺杂浓度的稳定性，这将直接影响到产品的质量。
实用新型内容
本实用新型的主要目的在于提供一种能够提供长期稳定掺杂浓度的外延掺杂气体的稀释装置。
为了实现上述目的，本实用新型提供一种外延掺杂气体的稀释装置，包括：
用于通过掺杂气体的第一管路，第一管路上设置有浓度检测机构和第一流量控制机构，
控制器，与浓度检测机构和第一流量控制机构信号连接。
在一些实施例中，还包括用于通过稀释气体的第二管路。
在一些实施例中，第二管路上设置有第二流量控制机构，控制器与第二流量控制机构信号连接。
在一些实施例中，在所述的第二管路上，位于第二流量控制机构的前后位置分别设置有第一、第二控制阀，第一、第二控制阀与所述的控制器信号连接。
在一些实施例中，还包括气体混合机构和第三管路，第一管路的出口、第二管路的出口均与混合机构的进口连接，混合机构的出口与第三管路的进口连接。
在一些实施例中，所述的气体混合机构采用蓄能器。
在一些实施例中，第三管路上设置有压力调节器、压力传感器、放空管路、阀门中的一种或多种。
在一些实施例中，在所述的第一管路上，位于第一流量控制机构的前后位置分别设置有第三、第四控制阀，第三、第四控制阀与所述的控制器信号连接。
在一些实施例中，包括仪表气管路，仪表气管路上设置有仪表气控制阀，所述的控制器与仪表气控制阀信号连接。
在一些实施例中，包括温度调节器，所述的温度调节器被配置成对浓度检测机构的环境温度进行调节。
经过本实用新型稀释装置稀释的掺杂气体具有长期稳定的浓度，从而保证外延层具有稳定的电阻率。
附图说明
图1为本实用新型稀释装置的一种结构示意图。
图中：100.第一管路，101.浓度检测机构，102.第一流量控制机构，103.第三控制阀，104.第四控制阀，200.第二管路，201.第二流量控制机构，202.第一控制阀，203.第二控制阀，300.第三管路，301.气体混合机构，304.压力调节器，305.放空管路，400.控制器，500.仪表气控制阀，106、205、302、303均为压力传感器，105、204、306、307均为手动阀。
具体实施方式
下面结合附图与实施例对本实用新型作进一步说明。
如图1所示，本实施例的外延掺杂气体的稀释装置主要包括：用于通过掺杂气体的第一管路100和控制器400，第一管路100上设置有浓度检测机构101和第一流量控制机构102，控制器400与浓度检测机构101和第一流量控制机构102信号连接。根据浓度检测机构101的检测到掺杂气体中掺杂剂的浓度，以根据控制器400中预设的稀释比例设定值，由控制器400发送控制信号至第一流量控制机构102，控制从第一管路100出口送出的掺杂气体的流量，以稳定稀释后掺杂气体的掺杂浓度。浓度检测机构101可以采用浓度传感器，第一流量控制机构102采用流量控制阀，控制器400可采用可编程控制器。
在本实施例中，还包括用于通过稀释气体的第二管路200。第二管路200上设置有第二流量控制机构201，控制器400与第二流量控制机构201信号连接。第二管路200输送用于稀释掺杂气体的稀释气体，根据控制器中预设的稀释比例设定值，一方面可以对第一流量控制机构102控制第一管路100中掺杂气体 的流量，另一方面还可以发送控制信号至第二流量控制机构201，控制第二管路200出口送出稀释气体的流量，同时调节掺杂气体和稀释气体的流量能够提高调节效率，使得掺杂浓度更加稳定。第二流量控制机构201也可采用流量控制阀。
在一些实施例中，还包括气体混合机构301和第三管路300，第一管路100的出口、第二管路200的出口均与混合机构的进口连接，混合机构的出口与第三管路300的进口连接。所述的气体混合机构301采用蓄能器。蓄能器一方面能够用于预防压力的大幅度波动，另一方面，蓄能器中积蓄的压力能够帮助掺杂气体和稀释气体的充分混合，起到了增强混合效果的作用。第三管路300上设置有压力调节器304、压力传感器303、放空管路305、手动阀306中的一种或多种。其中，提供放空管路305能够在外延结束后排出管路中剩余的气体，另一方面，第一管路100、第三管路300和放空管路305能够形成一条对浓度检测机构101的校验通路，在校验时，从第一通路的进口通入校验气体，校验气经过浓度检测机构101后由放空管路305排出。
在本实施例中，在所述的第一管路100上，位于第一流量控制机构102的前后位置分别设置有第三、第四控制阀103、104，第三、第四控制阀103、104与所述的控制器400信号连接。在所述的第二管路200上，位于第二流量控制机构201的前后位置分别设置有第一、第二控制阀202、203，第一、第二控制阀202、203与所述的控制器400信号连接。当第一流量控制机构102、第二流量控制机构201停止工作时，可关闭第一流量控制机构102、第二流量控制机构201两端的第三、第四控制阀103、104、第一、第二控制阀202、203，以防止因第一、第二流量控制机构201泄露造成的对后续蓄能器中稀释后掺杂气体的浓度影响。
本实施例中，还包括仪表气管路，仪表气管路上设置有仪表气控制阀500，所述的控制器400与仪表气控制阀500信号连接。通过控制器400控制仪表气控制阀500，以提高设备的自动化程度。
本实施例中还包括温度调节器，所述的温度调节器被配置成对浓度检测机构101的环境温度进行调节。通过增加外部的温度调节器，减少了外界环境因素对于检测结果的影响。
除此以外，还可以在第一管路100上设置手动阀105，压力传感器106，第二管路上设置手动阀204，压力传感器205，在放空管路305上设置手动阀307，从而使得稀释装置具有可手动调节的可能。
在进行掺杂气体稀释时，在第一管路100的进口处通入的掺杂气体，如磷烷，在第二管路200中通入稀释气体，如氢气，浓度检测机构101将检测到的磷烷浓度数值发送给控制器400，控制器400根据预设的稀释比例调节第一流量控制机构102和第二流量控制控制机构201，实现预设的稀释比例，磷烷和氢气进入气体混合机构301中进行混合，并稳定压力，稀释后的掺杂气体经第三管路300上的压力调节器304调节压力送入反应腔体内进行掺杂。
将传统的直接由钢瓶原气作为气源供气生产的产品与相同浓度气源经过本实用新型稀释装置供气生产的产品进行比较，其结果如下：
Figure PCTCN2022076525-appb-000001
上表实验结果表明，采用本实用新型稀释装置供气生产的外延片电阻率波动远小于原气供应系统。其原因在于，采用本实用新型稀释装置能够得到掺杂 剂浓度长期稳定的掺杂气体。本实用新型的稀释装置能够确保浓度长期稳定供应，可得到更稳定的外延电阻率，适合于批量生产,宜于在生产中推广使用。
本实用新型中的实施例仅用于对本实用新型进行说明，并不构成对权利要求范围的限制，本领域内技术人员可以想到的其他实质上等同的替代，均在本实用新型保护范围内。

Claims (10)

  1. 一种外延掺杂气体的稀释装置，其特征在于包括：
    用于通过掺杂气体的第一管路，第一管路上设置有浓度检测机构和第一流量控制机构，
    控制器，与浓度检测机构和第一流量控制机构信号连接。
  2. 如权利要求1所述的外延掺杂气体的稀释装置，其特征在于还包括用于通过稀释气体的第二管路。
  3. 如权利要求2所述的外延掺杂气体的稀释装置，其特征在于第二管路上设置有第二流量控制机构，控制器与第二流量控制机构信号连接。
  4. 如权利要求3所述的外延掺杂气体的稀释装置，其特征在于在所述的第二管路上，位于第二流量控制机构的前后位置分别设置有第一、第二控制阀，第一、第二控制阀与所述的控制器信号连接。
  5. 如权利要求2所述的外延掺杂气体的稀释装置，其特征在于还包括气体混合机构和第三管路，第一管路的出口、第二管路的出口均与混合机构的进口连接，混合机构的出口与第三管路的进口连接。
  6. 如权利要求5所述的外延掺杂气体的稀释装置，其特征在于所述的气体混合机构采用蓄压器。
  7. 如权利要求5所述的外延掺杂气体的稀释装置，其特征在于第三管路上设置有压力调节器、压力传感器、放空管路、阀门中的一种或多种。
  8. 如权利要求1所述的外延掺杂气体的稀释装置，其特征在于在所述的第一管路上，位于第一流量控制机构的前后位置分别设置有第三、第四控制阀，第三、第四控制阀与所述的控制器信号连接。
  9. 如权利要求1所述的外延掺杂气体的稀释装置，其特征在于包括仪表气管路，仪表气管路上设置有仪表气控制阀，所述的控制器与仪表气控制阀信号连接。
  10. 如权利要求1所述的外延掺杂气体的稀释装置，其特征在于包括温度调节器，所述的温度调节器被配置成对浓度检测机构的环境温度进行调节。
PCT/CN2022/076525 2021-06-23 2022-02-16 外延掺杂气体的稀释装置 WO2022267492A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023553505A JP2024509173A (ja) 2021-06-23 2022-02-16 エピタキシャルドーパントガス希釈装置
EP22827001.3A EP4361323A1 (en) 2021-06-23 2022-02-16 Dilution device for epitaxial doping gas

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202121408826.3U CN215560801U (zh) 2021-06-23 2021-06-23 外延掺杂气体的稀释装置
CN202121408826.3 2021-06-23

Publications (1)

Publication Number Publication Date
WO2022267492A1 true WO2022267492A1 (zh) 2022-12-29

Family

ID=79820076

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/076525 WO2022267492A1 (zh) 2021-06-23 2022-02-16 外延掺杂气体的稀释装置

Country Status (5)

Country Link
EP (1) EP4361323A1 (zh)
JP (1) JP2024509173A (zh)
CN (1) CN215560801U (zh)
TW (1) TWM631393U (zh)
WO (1) WO2022267492A1 (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4936877A (en) * 1989-07-18 1990-06-26 Advanced Technology Materials, Inc. Dopant delivery system for semiconductor manufacture
JP2002243599A (ja) * 2001-02-09 2002-08-28 Horiba Ltd ガス希釈装置
CN101550590A (zh) * 2009-03-31 2009-10-07 上海新傲科技有限公司 多层外延层的生长设备以及生长方法
CN109423695A (zh) * 2017-08-31 2019-03-05 中国科学院苏州纳米技术与纳米仿生研究所 掺杂源供应管路及化学气相沉积系统
CN109509702A (zh) * 2018-11-30 2019-03-22 上海晶盟硅材料有限公司 双层外延片的制备方法、设备及双层外延片
US20200018736A1 (en) * 2016-09-28 2020-01-16 Fujikin Incorporated Concentration detection method and pressure-type flow rate control device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4936877A (en) * 1989-07-18 1990-06-26 Advanced Technology Materials, Inc. Dopant delivery system for semiconductor manufacture
JP2002243599A (ja) * 2001-02-09 2002-08-28 Horiba Ltd ガス希釈装置
CN101550590A (zh) * 2009-03-31 2009-10-07 上海新傲科技有限公司 多层外延层的生长设备以及生长方法
US20200018736A1 (en) * 2016-09-28 2020-01-16 Fujikin Incorporated Concentration detection method and pressure-type flow rate control device
CN109423695A (zh) * 2017-08-31 2019-03-05 中国科学院苏州纳米技术与纳米仿生研究所 掺杂源供应管路及化学气相沉积系统
CN109509702A (zh) * 2018-11-30 2019-03-22 上海晶盟硅材料有限公司 双层外延片的制备方法、设备及双层外延片

Also Published As

Publication number Publication date
TWM631393U (zh) 2022-09-01
JP2024509173A (ja) 2024-02-29
EP4361323A1 (en) 2024-05-01
CN215560801U (zh) 2022-01-18

Similar Documents

Publication Publication Date Title
US20190354122A1 (en) Dynamic gas blending system and process for producing mixtures with minimal variation within tolerance limits and increased gas utilization
CN208634792U (zh) 一种蒸汽管线稳压装置
CN111394789A (zh) 化学气相沉积设备的进气结构、进气方法及设备
CN111408289B (zh) 一种工业化连续高精度混合气体的方法及系统
CN101280887A (zh) 管道气体压力稳定调节系统
CN110658797B (zh) 一种氯化氢合成炉系统的优化控制方法
CN106801887A (zh) 一种抗干扰节能型的火电机组制粉控制系统
WO2022267492A1 (zh) 外延掺杂气体的稀释装置
TWM462748U (zh) 混生氣體生成設備
JP5518404B2 (ja) 太陽電池用セレン化水素混合ガスの供給方法及び供給装置
CN101954252A (zh) 一种低压降气体混合系统
CN104906993B (zh) 一种瓦斯气体自动掺混装置及掺混方法
WO2011045983A1 (ja) 太陽電池用セレン化水素混合ガスの供給方法及び供給装置
WO2020000416A1 (zh) 非道路燃气发动机的燃气控制系统及其燃气控制方法
JPH11333280A (ja) 二種ガスによる目的濃度混合ガスの流通式供給方法とその装置
CN201194219Y (zh) 半导体器件制作设备以及系统
CN112624121B (zh) 多晶硅生产控制系统及控制方法
CN202252209U (zh) 无源恒流装置
CN106980329A (zh) 一种全氧燃烧玻璃窑炉氧气流量自动控制系统
CN204619909U (zh) 一种瓦斯气体自动掺混装置
WO2009139116A1 (ja) 気相成長装置および薄膜の気相成長方法
CN109603597B (zh) 低浓度多元混合气生产系统
CN217231024U (zh) 一种碳化硅晶体生长炉的压力串级控制系统
CN201194220Y (zh) 半导体器件制作设备
JPS6024410Y2 (ja) 混合燃料ガスの熱量調節装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22827001

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2023553505

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2022827001

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2022827001

Country of ref document: EP

Effective date: 20240123