WO2022264687A1 - 研磨ヘッド、研磨装置及び半導体ウェーハの製造方法 - Google Patents
研磨ヘッド、研磨装置及び半導体ウェーハの製造方法 Download PDFInfo
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- WO2022264687A1 WO2022264687A1 PCT/JP2022/018384 JP2022018384W WO2022264687A1 WO 2022264687 A1 WO2022264687 A1 WO 2022264687A1 JP 2022018384 W JP2022018384 W JP 2022018384W WO 2022264687 A1 WO2022264687 A1 WO 2022264687A1
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- Prior art keywords
- annular
- polishing
- membrane
- polished
- partition wall
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- 238000005498 polishing Methods 0.000 title claims abstract description 205
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000012528 membrane Substances 0.000 claims abstract description 68
- 238000009434 installation Methods 0.000 claims abstract description 14
- 238000005192 partition Methods 0.000 claims description 65
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- 230000000903 blocking effect Effects 0.000 abstract description 5
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- 230000000052 comparative effect Effects 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229920001971 elastomer Polymers 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
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- 239000013013 elastic material Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229920001973 fluoroelastomer Polymers 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000007518 final polishing process Methods 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a polishing head, a polishing apparatus, and a method for manufacturing a semiconductor wafer.
- Devices for polishing the surface of a work such as a semiconductor wafer include a single-side polishing device that polishes one side of the work and a double-side polishing device that polishes both sides of the work.
- the polishing head and the surface plate are rotated while pressing the surface to be polished of the workpiece held by the polishing head against the polishing pad attached to the surface plate, thereby polishing the surface to be polished of the work. and the polishing pad are brought into sliding contact with each other.
- the polishing pad are brought into sliding contact with each other.
- a rubber chuck method is known as a method of pressing the workpiece held by the polishing head against the polishing pad (WO2020/202682 and Japanese Patent No. 4833355 (the full description of which is here). (which is specifically incorporated by disclosure in ).
- gas such as air is introduced into the space behind the membrane (referred to as a rubber film in Japanese Patent No. 4833355) to inflate the membrane, thereby pressing the workpiece. can be done.
- Japanese Patent No. 4833355 also discloses a polishing head in which the space is divided into two spaces (see FIG. 1 of Japanese Patent No. 4833355).
- a polishing head in which the space behind the membrane is divided into two spaces is hereinafter referred to as a two-zone membrane head.
- the present inventors have studied the two-zone membrane head described in WO2020/202682 and the two-zone membrane head described in Japanese Patent No. 4833355, and found that control of the amount of polishing in the peripheral region of the surface to be polished of the workpiece and It has been found that it is difficult to achieve both suppression of local variation in polishing amount.
- One aspect of the present invention provides a two-zone membrane head capable of both controlling the amount of polishing in the peripheral region of the surface to be polished of the workpiece and suppressing local variations in the amount of polishing on the surface to be polished.
- One aspect of the present invention is a first annular member; a closing member that closes the top side opening of the opening of the first annular member; a membrane that closes the lower surface side opening of the opening of the first annular member; a second annular member positioned below the membrane and having an opening for holding a workpiece to be polished; has With the direction toward the center of the opening of the first annular member as the inner side and the other direction as the outer side, A space formed by closing the opening of the first annular member by the closing member and the membrane is an annular space having an upper annular connecting portion connected to the closing member and a lower annular connecting portion connected to the membrane.
- a polishing head in which an outer peripheral area of a position where a work to be polished is installed is positioned vertically below the upper annular connecting portion of the annular partition wall; Regarding.
- polishing head two-zone membrane head
- the conjecture of the present inventor regarding this point is as follows.
- the peripheral region of the surface to be polished of the workpiece is positioned vertically below the connecting portion between the membrane and the partition that partitions the space behind the membrane. (See for example FIG. 1 of WO2020/202682).
- the pressure applied vertically downward from the two spaces partitioned by the partition can be controlled by the amount of gas introduced into each region, it is not easy to control the pressure applied vertically below the partition. It is smaller than the pressure applied vertically downward. This is because, in a workpiece polished using the polishing head illustrated in WO2020/202682, local polishing amount fluctuations (specifically, local reduction in the polishing amount vertically below the connection portion) This is thought to be the reason why it is likely to occur.
- the inner diameter of the lower annular connection portion which is the connection portion between the annular partition wall separating the two spaces and the membrane, is larger than the inner diameter of the second annular member. big. Therefore, when polishing is performed using the polishing head, the second annular member is positioned vertically below the lower annular connecting portion, and the peripheral region of the surface to be polished of the workpiece is not positioned. The present inventor believes that this is the reason why the use of the polishing head makes it possible to polish the surface of the workpiece while suppressing a local decrease in the amount of polishing vertically below the connecting portion. is thinking.
- the outer peripheral region of the installation position of the work to be polished is positioned vertically below the upper annular connecting portion, and the lower annular connecting portion Since the inner diameter of the portion is larger than the inner diameter of the second annular member, the second annular member is positioned vertically below the lower annular connecting portion.
- the inner diameter of the connecting portion of the partition to the membrane is smaller than the inner diameter of the second annular member.
- the polishing head according to one aspect of the present invention by adjusting the amount of gas introduced into the outer space partitioned by the annular partition wall, the As a result, it is possible to easily control the amount of polishing of the peripheral region of the surface to be polished of the workpiece by adjusting the amount of gas introduced into the outer space.
- the inventor of the present invention conjectures that In addition, although the speculation of the present inventor is described in this specification, the present invention is not limited to such speculation.
- the annular partition wall can include a side shape selected from the group consisting of an inclined shape and a horizontal shape in a cross-sectional shape, and vertically below at least a part of the side shape, a second annular member and the outer peripheral edge of the installation position of the workpiece to be polished can be located.
- the blocking member may include an upper disc-shaped member and a lower disc-shaped member having an outer diameter smaller than that of the upper disc-shaped member, and the annular partition wall is configured such that the upper annular connecting portion It can be connected to the side surface of the disk-shaped member.
- the polishing head can further have a back pad between the membrane and the second annular member.
- the polishing head can have an introduction path for introducing gas into the inner space and an introduction path for introducing gas into the outer space.
- One aspect of the present invention is the polishing head; a polishing pad; a surface plate that supports the polishing pad; It relates to a polishing apparatus having
- One aspect of the present invention relates to a method for manufacturing a semiconductor wafer, including polishing a surface of a semiconductor wafer to be polished by the polishing apparatus to form a polished surface.
- a two-zone membrane head that is capable of both controlling the amount of polishing in the peripheral region of the surface to be polished of a workpiece and suppressing local fluctuations in the amount of polishing on the surface to be polished. becomes possible.
- FIG. 1 is a schematic cross-sectional view showing an example of a polishing head according to one aspect of the present invention
- FIG. 2 is an explanatory view of a connecting portion of an annular partition wall 15A in the polishing head 1A shown in FIG. 1
- FIG. 2 is an explanatory view of a connecting portion of an annular partition wall 15A in the polishing head 1A shown in FIG. 1
- FIG. It is explanatory drawing of the inner wall surface of a cyclic
- 1 is a schematic cross-sectional view showing an example of a polishing head according to one aspect of the present invention
- FIG. 1 is a schematic cross-sectional view showing an example of a polishing head according to one aspect of the present invention
- FIG. 1 is a schematic cross-sectional view showing an example of a polishing head according to one aspect of the present invention
- FIG. 1 is a schematic cross-sectional view showing an example of a polishing head according to one aspect of the present invention
- FIG. 1 is a schematic cross-sectional view showing an example of a polishing apparatus according to one aspect of the present invention
- FIG. 5 is a graph plotting the polishing amount difference against the polishing pressure Pe for Example 1, Example 2, Comparative Example 1, and Comparative Example 2.
- FIG. 4 shows a graph in which ESFQR is plotted against polishing pressure Pe for Example 1, Example 2, Comparative Example 1, and Comparative Example 2.
- a polishing head comprises: a first annular member; a closing member that closes an upper surface side opening of an opening of the first annular member; It has a closing membrane and a second annular member positioned below the membrane and having an opening for holding a workpiece to be polished.
- the opening of the first annular member is closed by the closing member and the membrane, with the direction toward the center of the opening of the first annular member being the inside and the other direction being the outside.
- the space is partitioned into an inner space and an outer space by an annular partition wall having an upper annular connection portion connected to the closing member and a lower annular connection portion connected to the membrane, and a lower annular partition wall of the annular partition wall.
- connection portion is larger than the inner diameter of the second annular member, and the outer peripheral area of the installation position of the work to be polished is positioned vertically below the upper annular connection portion of the annular partition wall.
- the polishing head will be described in more detail below.
- expressions such as “lower surface”, “lower surface”, “upper surface”, “upper surface”, and “lower surface” refer to the “lower surface” when the polishing head is placed in a state of performing polishing. It means “below”, “top”, “upper”, “lower” and the like.
- the terms “tilt” and “horizontal” refer to a case in which the polishing head is tilted with respect to the horizontal direction when it is placed in a state of performing a polishing process.
- the case parallel to the direction is called “horizontal”.
- the direction toward the center of the opening of the first annular member is called the inner side, and the other direction is called the outer side.
- Annular refers to a shape having an opening, and the shape of the opening in plan view can be circular.
- FIGS. 5 to 7 are schematic cross-sectional views each showing an example of a polishing head according to one aspect of the present invention.
- the annular partition wall 15A in FIG. 1, the annular partition wall 15B in FIG. 5, the annular partition wall 15C in FIG. 6, and the annular partition wall 15D in FIG. It is sometimes called 15. 1 and FIGS. 5 to 7, illustration of the head body is omitted.
- the head body is positioned above the parts shown in FIGS. 1 and 5 to 7, and the parts shown in the figures are attached to the head body by a known method such as bolting.
- the polishing head 1 has a first annular member 11.
- the first annular member 11 has an annular upper surface and an annular lower surface, the inner diameter of the upper surface being the same value as the outer diameter of the lower surface, and the outer diameter of the upper surface being the same value as the outer diameter of the lower surface. That is, the first annular member 11 has a cylindrical outer shape, and the shape of the opening is also cylindrical.
- the second annular member 12 which will be described later.
- the term "same value" is used in the sense of including the case of being completely matched and the case of including an error that can inevitably occur in manufacturing. This point also applies to terms related to shapes such as cylinders.
- an annular ring made of a rigid material such as stainless steel (SUS), which is commonly used for the polishing head of a single-side polishing apparatus, can be used.
- SUS stainless steel
- the lower surface of the first annular member 11 is covered with a membrane 13.
- the membrane 13 may block at least the opening on the lower surface side of the first annular member 11. However, from the viewpoint of suppressing displacement when the membrane 13 swells, the opening of the first annular member 11 is polished. From the viewpoint of suppressing contamination of the agent, it is preferable that the entire annular lower surface of the first annular member 11 is also covered with the membrane 13 .
- the membrane 13 can be attached to the annular lower surface of the first annular member 11 by a known method such as using an adhesive. Moreover, as shown in FIGS. 1 and 5 to 7, it is also preferable to bond the membrane 13 so as to cover part or all of the side surface of the first annular member 11.
- a membrane made of an elastic material such as rubber can be used. Examples of rubber include fluororubber.
- the thickness of the membrane 13 is not particularly limited, and can be, for example, approximately 0.5 to 2 mm.
- a back pad 14 is attached to the lower surface of the membrane 13. As shown in FIG.
- the back pad 14 can be attached to the lower surface of the membrane 13 by a known method such as using an adhesive. Although it is possible for the outer peripheral region of the lower surface of the membrane 13 and the annular upper surface of the second annular member 12 to be in direct contact with each other, from the viewpoint of suppressing the peeling of the membrane 13 and the generation of undulations, the back pad 14 does not prevent the membrane 13 from and the annular upper surface of the second annular member 12 .
- the back pad 14 for example, a disk-shaped plate made of a material (for example, foamed polyurethane or the like) that exhibits adsorption properties due to the surface tension of water can be used. As a result, the work can be held on the back pad 14 containing water during polishing.
- a material for example, foamed polyurethane or the like
- the membrane 13 closes the lower opening of the first annular member 11.
- the upper opening of the first annular member 11 is closed by a closing member composed of an upper disk-shaped member 10a and a lower disk-shaped member 10b.
- the lower disk-shaped member 10b is a disk-shaped member having an outer diameter smaller than that of the upper disk-shaped member 10a.
- the upper disk-shaped member 10a and the lower disk-shaped member 10b can be disk-shaped flat plates having the same upper surface outer diameter and lower surface outer diameter, and can be arranged concentrically, for example. 1 and each of FIGS.
- the upper disk-shaped member 10a and the lower disk-shaped member 10b are separate members, and can be removed by any means (for example, one having a concave portion and the other having a convex portion). It is fixed by a method of fitting a convex portion into a concave portion, bolting, bonding with an adhesive, etc.).
- the polishing head according to one aspect of the present invention is not limited to such a configuration, and the closing member is a member in which an upper disk-shaped member and a lower disk-shaped member having an outer diameter smaller than that of the upper disk-shaped member are integrally molded. It can be.
- a material constituting the closing member is not particularly limited.
- W indicates a work installation position. When polishing the workpiece, when gas is introduced into the space surrounded by the first annular member 11, the membrane 13 and the closing member, the membrane 14 swells. The workpiece is pressed and polished.
- the space surrounded by the first annular member 11, the membrane 13 and the closing member is partitioned into an inner space 16a and an outer space 16b by an annular partition wall 15.
- the annular partition wall 15 can be made by molding an elastic material such as rubber into a desired shape. Examples of rubber include fluororubber.
- the thickness of the annular partition wall 15 can be, for example, about 0.5 to 1.5 mm.
- a gas introduction passage 17a passing through the upper disc-shaped member 10a and the lower disc-shaped member 10b is provided at the central portion of the blocking member. Gases can be introduced from the gas introduction passages 17b by independently controlling the amount of gas introduction.
- the workpiece below the outer space 16b is polished.
- the polishing surface pressure applied to the peripheral region of the surface to be polished can be controlled independently of the polishing surface pressure applied to the central portion of the surface to be polished of the workpiece below the inner space 16a. 1 and each of FIGS. 5 to 7, there is one gas introduction path 17a and one gas introduction path 17b, but the present invention is not limited to such an embodiment, and two or more gas introduction paths 17a may be provided. It is also possible to provide two or more gas introduction paths 17b.
- the second annular member 12 is arranged below the membrane 13 with a back pad 14 interposed therebetween.
- the second annular member 12 is an annular member having an opening for holding a workpiece to be polished. Such annular members are also commonly referred to as retainers, retainer rings, templates and the like.
- the second annular member 12 can be an annular member made of a material (eg, glass epoxy) commonly used for annular members called retainers of polishing heads.
- FIG. 2 is an explanatory view of the connecting portion (especially the lower annular connecting portion) of the annular partition wall 15A in the polishing head 1A shown in FIG.
- the annular partition wall 15A has an upper annular connecting portion Cupper connected to the closing member and a lower annular connecting portion Clower connected to the membrane 13 .
- the upper annular connecting portion Cupper is connected to the side surface of the lower disk-shaped member 10 b of the closing member
- the lower annular connecting portion C lower is connected to the upper surface of the membrane 13 .
- connection means for each connection known methods such as use of an adhesive, integral molding, and fitting of protrusions into recesses can be used.
- the inner diameter of the lower annular connecting portion of the annular partition wall is d1 and the inner diameter of the second annular member is d2
- the inner diameter of the lower annular connecting portion of the annular partition wall is d1. is greater than the inner diameter d2 of the second annular member. That is, the relationship "d1>d2" is satisfied. Therefore, when polishing the workpiece, the second annular member is positioned vertically below the lower annular connecting portion of the annular partition wall, and the outer peripheral region of the surface to be polished of the workpiece is not positioned.
- the peripheral region of the surface to be polished of the workpiece is positioned vertically below the connecting portion of the partition (see, for example, FIG. 1 of WO2020/202682).
- the polishing head illustrated in WO 2020/202682 local polishing amount fluctuations (specifically, the polishing amount vertically below the connecting portion This is thought to be the reason for the tendency for localized decline) to occur.
- the polishing head according to one aspect of the present invention by satisfying the relationship of "d1>d2", the local decrease in the amount of polishing vertically below the connection portion is suppressed, and the workpiece is polished.
- d1 is more than 100%, preferably more than 102%, more preferably 103% or more.
- d1 can be, for example, 120% or less or 110% or less, or can exceed the values exemplified here.
- FIG. 3 is an explanatory diagram of a connecting portion (special upper annular connecting portion) of the annular partition wall 15A in the polishing head 1A shown in FIG.
- the annular partition wall 15A has an upper annular connecting portion Cupper connected to the side surface of the lower disk-shaped member 10b of the closing member.
- two dotted lines are straight lines drawn vertically downward from the upper annular connecting portion Cupper.
- the outer peripheral area of the installation position W of the workpiece to be polished is positioned vertically below the upper annular connecting portion Cupper.
- the "peripheral region” refers to a partial region extending radially inward from the outer peripheral end. 1 and FIGS.
- the upper annular connecting portion Cupper of the annular partition wall 15 is connected to the side surface of the lower disk-shaped member 10b of the closing member.
- the vertically downward direction of the connecting portion C upper is also the vertically downward direction of the side surface of the lower disk-shaped member 10b.
- the upper annular connecting portion Cupper of the annular partition wall 15 can be connected to the lower surface of the lower disk-shaped member 10b or the lower surface of the upper disk-shaped member 10a.
- the vertically downward direction of the upper annular connecting portion Cupper means the vertically downward direction of the inner circumferential edge of the upper annular connecting portion Cupper.
- d3 be the inner diameter of the opening of the upper annular connecting portion Cupper
- d4 be the outer diameter of the installation position W of the workpiece to be polished
- d3 is smaller than d4. That is, the relationship "d3 ⁇ d4" is satisfied.
- the outer peripheral region of the installation position of the work to be polished is positioned vertically below the upper annular connecting portion, and Compared to the polishing head shown in FIG. 1 of Japanese Patent No. 4,833,355, the fact that the inner diameter of the lower annular connecting portion is larger than the inner diameter of the second annular member introduces into the outer space partitioned by the annular partition wall.
- d3 is less than 100%, preferably 95% or less, more preferably 90% or less.
- d3 is 40% or more when d4 is 100%. It is preferably 50% or more, still more preferably 60% or more, still more preferably 70% or more, and even more preferably 80% or more.
- the cross-sectional shape of the annular partition wall preferably includes at least a portion of a side surface shape selected from the group consisting of an inclined shape and a horizontal shape. It is more preferable to locate a region including the inner peripheral edge of the second annular member and the outer peripheral edge of the installation position of the work to be polished. Having such a configuration can lead to at least part of the inner wall surface of the annular partition wall coming into contact with the upper surface of the membrane when gas is introduced into the outer space during polishing. This can contribute to facilitating control of the amount of polishing in the plane of the workpiece to be polished (especially in the peripheral region) by changing the amount of gas introduced into the outer space. Gas is typically introduced into both the outer space and the inner space during polishing.
- a polishing head having a structure in which at least a part of the inner wall surface of the annular partition wall contacts the upper surface of the membrane when gas is introduced into the outer space during polishing is, for example, a polishing head that does not introduce a gas into the inner space and only the outer space.
- the gas is introduced into the chamber, it can be confirmed by the contact between the upper surface of the membrane and at least a part of the inner wall surface of the partition wall.
- FIG. 4 is an explanatory diagram of the inner wall surface of the annular partition wall and the upper surface of the membrane.
- 15A inner indicates the inner wall surface of the annular partition wall 15A
- 13 upper indicates the upper surface of the membrane 13 .
- the cross-sectional shape of the annular partition wall 15A includes horizontal shapes in the upper and lower portions, and an inclined shape continues to the lower horizontal shape.
- the cross-sectional shape of the annular partition wall 15B is an inclined shape.
- the cross-sectional shape of the annular partition wall 15C includes a horizontal shape.
- the cross-sectional shape of the annular partition wall 15D is a horizontal shape followed by an inclined shape.
- One aspect of the present invention relates to a polishing apparatus having the above polishing head, a polishing pad, and a surface plate supporting the polishing pad.
- Another aspect of the present invention relates to a method for manufacturing a semiconductor wafer, including polishing a surface of a semiconductor wafer to be polished by the polishing apparatus to form a polished surface.
- FIG. 8 is a schematic cross-sectional view showing an example of a polishing apparatus according to one aspect of the present invention.
- a polishing apparatus 50 shown in FIG. 8 includes the polishing head 1A shown in FIG. As in FIG. 1 and the like, illustration of the head body of the polishing head is omitted.
- the polishing apparatus 50 is a single-side polishing apparatus of a rubber chuck type.
- the polishing apparatus 50 is installed at the installation position W of the polishing head 1A while rotating the polishing head 1A and the surface plate 42 by rotating mechanisms (not shown).
- the polishing target surface of the target work Wa and the polishing pad 41 bonded on the surface plate 42 are brought into sliding contact.
- An abrasive 61 discharged from an abrasive supply mechanism 60 is supplied between the lower surface of the work Wa, which is the surface to be polished of the work Wa, and the polishing pad 41, and the surface to be polished of the work Wa is polished.
- polishing slurry that is normally used for CMP (Chemical Mechanical Polishing) can be used.
- the above-described polishing apparatus can have the same configuration as a normal single-side polishing apparatus, except that it includes a polishing head according to one aspect of the present invention.
- the semiconductor wafer has a polished surface, except that it includes forming a polished surface by polishing the surface of the semiconductor wafer to be polished using the polishing apparatus according to one aspect of the present invention.
- a known technique related to a method of manufacturing a semiconductor wafer can be applied.
- the wafer to be polished can be, for example, a silicon wafer (preferably a monocrystalline silicon wafer).
- a silicon wafer can be produced by the following method. Blocks are obtained by cutting monocrystalline silicon ingots.
- a single crystal silicon ingot can be grown by a known method such as the CZ method (Czochralski method) or the FZ method (Floating Zone method). The resulting block is sliced into wafers.
- a silicon wafer can be produced by subjecting this wafer to various processes. Examples of the processing include chamfering, flattening (lapping, grinding, polishing), and the like.
- the above-described polishing apparatus can be suitably used, for example, in the final polishing process, which is the final process of wafer processing.
- the polishing pressure Pe described below is a pressure applied downward from the outer peripheral region of the membrane 13 when gas is introduced into the outer space 16b from the gas introduction path 17b and the outer peripheral region of the membrane 13 swells. This pressure is applied downward from the central portion of the membrane 13 when the central portion of the membrane 13 swells due to gas being introduced into the inner space 16a through the gas introduction passage 17a.
- the polishing pressures Pe and Pc are experimental values.
- the polishing head of Example 1 (rubber chuck type two-zone membrane head) has the structure shown in FIG.
- the values shown in Table 1 are d2, the inner diameter d3 of the opening of the upper annular connecting portion of the annular partition wall, and the outer diameter d4 of the installation position of the workpiece to be polished.
- the polishing head of Example 2 has the same configuration as the polishing head of Example 1 except that d3 is set to the value shown in Table 1.
- the inner diameter d1 of the lower annular connecting portion C lower of the annular partition wall 15A is larger than the inner diameter d2 of the second annular member and the upper annular diameter of the annular partition wall 15A.
- the outer peripheral area of the installation position W of the workpiece to be polished is positioned vertically below the connecting portion Cupper .
- the polishing heads of Examples 1 and 2 when the gas was introduced only into the outer space without introducing the gas into the inner space, at least part of the inner wall surface of the partition wall (specifically, the portion of the lower horizontal cross-sectional shape) It was confirmed that part or all of the inner wall surface was in contact with the upper surface of the membrane.
- the polishing heads of Comparative Examples 1 and 2 have the same configuration as the polishing head of Example 1 except that d1 and d3 are set to the values shown in Table 1.
- the inner diameter d1 of the lower annular connecting portion C lower of the annular partition wall 15A is smaller than the inner diameter d2 of the second annular member (d1 ⁇ d2). Therefore, during polishing, the second annular member 12 is positioned vertically below the lower annular connecting portion C lower of the annular partition wall 15A.
- the inner diameter d1 of the lower annular connecting portion C lower of the annular partition wall 15A is substantially equal to the inner diameter d2 of the second annular member, but satisfies the relationship of "d1 ⁇ d2". Therefore, during polishing, the second annular member 12 is positioned vertically below the lower annular connecting portion C lower of the annular partition wall 15A.
- polishing apparatus of Example 1 a polishing apparatus having the configuration shown in FIG. 8 including the polishing head of Example 1 was prepared, and single-side polishing of a silicon wafer was performed using this polishing apparatus. Three silicon wafers were each subjected to single-side polishing under the following polishing conditions.
- Pc 10kPa
- Pe 8kPa, 10kPa or 12kPa
- the polishing apparatus of Example 2 is the same as the polishing apparatus of Example 1 except that the polishing head of Example 2 is used as the polishing head.
- each of the three silicon wafers was single-sided polished by the method described in Example 1.
- Comparative Examples 1 and 2 using the polishing head of each comparative example as a polishing head, three silicon wafers were each subjected to single-sided polishing by the method described in Example 1. gave.
- FIG. 9 shows a graph plotting the polishing amount difference against the polishing pressure Pe for Example 1, Example 2, Comparative Example 1, and Comparative Example 2.
- the degree of change in the value of the polishing amount difference with respect to the change in the value of the polishing pressure Pe is greater than that in Examples 1, 2, and Comparative Example 1. It was small.
- ESFQR edge site flatness front reference least square range ( abbreviation with underlined letters).
- ESFQR sets a site in the outer peripheral area of the wafer surface that has been subjected to polishing processing in the above measurement device, divides this site radially into multiple sectors, and determines the maximum displacement from the best fit surface at this site to the minimum displacement. Calculated as the added value.
- FIG. 10 shows a graph plotting the ESFQR against the polishing pressure Pe for Example 1, Example 2, Comparative Example 1, and Comparative Example 2.
- the value of ESFQR was larger than those of Example 1, Example 2 and Comparative Example 2 for any Pe (that is, polishing treatment was performed).
- the flatness of the peripheral region of the wafer that was processed was low).
- the reason why the flatness of the peripheral region of the wafer polished by the polishing apparatus of Comparative Example 1 was low is that, in the polishing apparatus of Comparative Example 1, the surface of the wafer to be polished was below the lower annular connecting portion of the annular partition wall. This is probably because it was not easy to control the polishing pressure applied below the lower annular connecting portion because the outer peripheral region of the lower annular connecting portion was located.
- the polishing amount of the peripheral region of the surface to be polished of the workpiece can be controlled by changing the polishing pressure Pe, and It can be confirmed that it was also possible to suppress local polishing amount fluctuations.
- One aspect of the present invention is useful in the technical field of semiconductor wafers such as silicon wafers.
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Abstract
Description
第1の環状部材と、
第1の環状部材の開口部の上面側開口を閉塞する閉塞部材と、
第1の環状部材の開口部の下面側開口を閉塞するメンブレンと、
上記メンブレンの下方に位置し、研磨対象のワークを保持する開口部を有する第2の環状部材と、
を有し、
第1の環状部材の開口部の中心に向かう方向を内側、他方の方向を外側として、
第1の環状部材の開口部が上記閉塞部材と上記メンブレンとによって閉塞されて形成された空間が、上部環状接続部が上記閉塞部材に接続され且つ下部環状接続部が上記メンブレンに接続された環状の仕切り壁によって内側空間と外側空間とに仕切られ、
上記環状の仕切り壁の下部環状接続部の内径は、第2の環状部材の内径より大きく、且つ、
上記環状の仕切り壁の上部環状接続部の鉛直下方に、研磨対象のワークの設置位置の外周領域が位置する、研磨ヘッド、
に関する。
これに対し、上記の本発明の一態様にかかる研磨ヘッドでは、2つの空間を仕切る環状の仕切り壁のメンブレンとの接続部である下部環状接続部の内径は、第2の環状部材の内径より大きい。したがって、上記研磨ヘッドを使用して研磨を行う際、下部環状接続部の鉛直下方には、第2の環状部材が位置し、ワークの研磨対象表面の外周領域は位置しない。この点が、上記研磨ヘッドを使用することにより、接続部の鉛直下方における研磨量の局所的な低下を抑制してワークの研磨対象表面の研磨を行うことができる理由であると、本発明者は考えている。
また、上記の本発明の一態様にかかる研磨ヘッドでは、環状の仕切り壁の接続部について、上部環状接続部の鉛直下方に研磨対象のワークの設置位置の外周領域が位置し、且つ下部環状接続部の内径が第2の環状部材の内径より大きいため下部環状接続部の鉛直下方には第2の環状部材が位置する。これに対し、特許第4833355号の図1に示されている研磨ヘッドでは、仕切りのメンブレンとの接続部の内径が第2の環状部材の内径より小さい。かかる構成の研磨ヘッドと比べて、上記の本発明の一態様にかかる研磨ヘッドによれば、環状の仕切り壁で仕切られた外側空間へ導入する気体の量を調整することによって、外側空間から下方に加わる圧力をより効果的に制御することができ、その結果、ワークの研磨対象表面の外周領域の研磨量を、外側空間へ導入する気体の量を調整することによって容易に制御することが可能になると本発明者は推察している。なお、本明細書には本発明者の推察が記載されているが、かかる推察に本発明は限定されない。
上記研磨ヘッドと、
研磨パッドと、
上記研磨パッドを支持する定盤と、
を有する研磨装置に関する。
本発明の一態様にかかる研磨ヘッドは、第1の環状部材と、第1の環状部材の開口部の上面側開口を閉塞する閉塞部材と、第1の環状部材の開口部の下面側開口を閉塞するメンブレンと、上記メンブレンの下方に位置し、研磨対象のワークを保持する開口部を有する第2の環状部材と、を有する。上記研磨ヘッドにおいて、第1の環状部材の開口部の中心に向かう方向を内側、他方の方向を外側として、第1の環状部材の開口部が上記閉塞部材と上記メンブレンとによって閉塞されて形成された空間が、上部環状接続部が上記閉塞部材に接続され且つ下部環状接続部が上記メンブレンに接続された環状の仕切り壁によって内側空間と外側空間とに仕切られ、上記環状の仕切り壁の下部環状接続部の内径は、第2の環状部材の内径より大きく、且つ、上記環状の仕切り壁の上部環状接続部の鉛直下方に、研磨対象のワークの設置位置の外周領域が位置する。
以下、上記研磨ヘッドについて、更に詳細に説明する。本発明及び本明細書において、「下面」、「下方」、「上面」、「上部」、「下部」等の表記は、研磨ヘッドが研磨処理を行う状態に置かれたときの「下面」、「下方」、「上面」、「上部」、「下部」等を意味する。本発明及び本明細書において、「傾斜」及び「水平」は、研磨ヘッドが研磨処理を行う状態に置かれたときの水平方向に対して傾斜している場合を「傾斜」と呼び、かかる水平方向に対して平行な場合を「水平」と呼ぶ。また、第1の環状部材の開口部の中心に向かう方向を内側、他方の方向を外側と呼ぶ。「環状」とは、開口を有する形状をいい、開口の平面視形状は円形であることができる。以下では、図面に基づき本発明を説明するが、図面に示す実施形態は例示であって、かかる実施形態に本発明は限定されない。また、図中、同一の部分には同一の符号を付している。
本発明の一態様は、上記研磨ヘッドと、研磨パッドと、この研磨パッドを指示する定盤と、を有する研磨装置に関する。
実施例1の研磨ヘッド(ラバーチャック方式の2ゾーンメンブレンヘッド)は、図1に示す構成の研磨ヘッドであって、環状の仕切り壁の下部環状接続部の内径d1、第2の環状部材の内径d2、環状の仕切り壁の上部環状接続部の開口内径d3及び研磨対象のワークの設置位置の外径d4が表1に示す値である。
実施例2の研磨ヘッドは、d3を表1に示す値とした点以外は実施例1の研磨ヘッドと同じ構成の研磨ヘッドである。
実施例1及び実施例2の研磨ヘッドにおいて、環状の仕切り壁15Aの下部環状接続部Clowerの内径d1は、第2の環状部材の内径d2より大きく、且つ、環状の仕切り壁15Aの上部環状接続部Cupperの鉛直下方に研磨対象のワークの設置位置Wの外周領域が位置する。実施例1及び実施例2の研磨ヘッドについて、内側空間に気体を導入せず外側空間のみに気体を導入すると、仕切り壁の内壁面の少なくとも一部(詳しくは断面形状が下部水平形状の部分の内壁面の一部又は全部)がメンブレンの上面と接触することを確認した。
比較例1及び比較例2の研磨ヘッドは、d1及びd3を表1に示す値とした点以外は実施例1の研磨ヘッドと同じ構成の研磨ヘッドである。
比較例1の研磨ヘッドでは、環状の仕切り壁15Aの下部環状接続部Clowerの内径d1は、第2の環状部材の内径d2より小さい(d1<d2)。したがって、研磨時には、環状の仕切り壁15Aの下部環状接続部Clowerの鉛直下方には第2の環状部材12が位置する。
比較例2の研磨ヘッドでは、環状の仕切り壁15Aの下部環状接続部Clowerの内径d1は、第2の環状部材の内径d2とほぼ等しいが、「d1<d2」の関係を満たす。したがって、研磨時には、環状の仕切り壁15Aの下部環状接続部Clowerの鉛直下方には第2の環状部材12が位置する。
以下の研磨処理では、同じ単結晶シリコンインゴットから同じ切り出し条件で切り出され、同じ条件で各種加工処理が施された複数のシリコンウェーハに対して、それぞれ最終工程の仕上げ研磨工程として片面研磨処理を施した。
Pc=10kPa
Pe=8kPa、10kPa又は12kPa
比較例1及び比較例2についても同じように、研磨ヘッドとして各比較例の研磨ヘッドを使用して、実施例1について記載した方法で、3枚のシリコンウェーハに対して、それぞれ片面研磨処理を施した。
実施例1、実施例2、比較例1及び比較例2において研磨処理が施されたシリコンウェーハについて、測定装置としてKLA-Tencor社製幾何学測定システムWaferSightを使用し、
(i)ウェーハ中心におけるウェーハ厚み(「ウェーハ中心厚み」と記載する。);及び
(ii)ウェーハ外側周端から半径方向内側10mmの位置の全周において等間隔72箇所におけるウェーハ厚みの算術平均(「ウェーハ外周厚み」と記載する。)
を求めた。
研磨処理が施された各シリコンウェーハについて、研磨量差を、「研磨量差=ウェーハ中心厚み-ウェーハ外周厚み」として算出した。図9に、実施例1、実施例2、比較例1及び比較例2について、研磨圧力Peに対して研磨量差をプロットしたグラフを示す。図9のグラフに示されているように、比較例2では、研磨圧力Peの値の変化に対する研磨量差の値の変化の程度が、実施例1、実施例2及び比較例1に対して小さかった。
実施例1、実施例2、比較例1及び比較例2において研磨処理が施されたシリコンウェーハについて、測定装置としてKLA-Tencor社製幾何学測定システムWaferSightを使用し、ウェーハの外周領域平坦性の指標であるESFQRを求めた。ESFQRは、Edge site flatness front reference least square rangeの略称(下線を付した文字をつなげた略称)である。ESFQRは、上記測定装置において、研磨処理が施されたウェーハ表面の外周領域にサイトを設定し、このサイトを放射状に複数セクターに分割し、このサイトにおけるベストフィット面からの最大変位に最小変位を足した値として求められる。セクターの分割条件は、72セクター、Length 15mm、Width5°とした。図10に、実施例1、実施例2、比較例1及び比較例2について、研磨圧力Peに対してESFQRをプロットしたグラフを示す。図10のグラフに示されているように、比較例1では、いずれのPeにおいても、実施例1、実施例2及び比較例2に対してESFQRの値が大きかった(即ち、研磨処理が施されたウェーハの外周領域平坦性が低かった)。比較例1の研磨装置で研磨処理が施されたウェーハにおいて外周領域平坦性が低かった理由は、比較例1の研磨装置では、環状の仕切り壁の下部環状接続部の下方に研磨対象のウェーハ表面の外周領域が位置するため、下部環状接続部の下方に加わる研磨圧力の制御が容易ではなかったことにあると考えられる。
Claims (7)
- 第1の環状部材と、
第1の環状部材の開口部の上面側開口を閉塞する閉塞部材と、
第1の環状部材の開口部の下面側開口を閉塞するメンブレンと、
前記メンブレンの下方に位置し、研磨対象のワークを保持する開口部を有する第2の環状部材と、
を有し、
第1の環状部材の開口部の中心に向かう方向を内側、他方の方向を外側として、
第1の環状部材の開口部が前記閉塞部材と前記メンブレンとによって閉塞されて形成された空間が、上部環状接続部が前記閉塞部材に接続され且つ下部環状接続部が前記メンブレンに接続された環状の仕切り壁によって内側空間と外側空間とに仕切られ、
前記環状の仕切り壁の下部環状接続部の内径は、第2の環状部材の内径より大きく、且つ、
前記環状の仕切り壁の上部環状接続部の鉛直下方に、研磨対象のワークの設置位置の外周領域が位置する、研磨ヘッド。 - 前記環状の仕切り壁は、傾斜形状及び水平形状からなる群から選ばれる側面形状を断面形状に含み、且つ
前記側面形状の少なくとも一部の鉛直下方に、第2の環状部材の内側周端及び研磨対象のワークの設置位置の外側周端を含む領域が位置する、請求項1に記載の研磨ヘッド。 - 前記閉塞部材は、上部円盤状部材と、上部円盤状部材より外径が小さい下部円盤状部材と、を含み、
前記環状の仕切り壁は、上部環状接続部が前記下部円盤状部材の側面に接続している、請求項1又は2に記載の研磨ヘッド。 - 前記メンブレンと第2の環状部材との間にバックパッドを更に有する、請求項1~3のいずれか1項に記載の研磨ヘッド。
- 前記内側空間に気体を導入する導入路と、
前記外側空間に気体を導入する導入路と、
を有する、請求項1~4のいずれか1項に記載の研磨ヘッド。 - 請求項1~5のいずれか1項に記載の研磨ヘッドと、
研磨パッドと、
前記研磨パッドを支持する定盤と、
を有する研磨装置。 - 請求項6に記載の研磨装置によって研磨対象の半導体ウェーハの表面を研磨して研磨面を形成することを含む、半導体ウェーハの製造方法。
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JP2012051037A (ja) * | 2010-08-31 | 2012-03-15 | Fujikoshi Mach Corp | 研磨装置 |
WO2013001719A1 (ja) * | 2011-06-29 | 2013-01-03 | 信越半導体株式会社 | 研磨ヘッド及び研磨装置 |
JP2019193968A (ja) * | 2018-04-25 | 2019-11-07 | 信越半導体株式会社 | 研磨装置、ウェーハの研磨方法、及び、ウェーハの製造方法 |
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CN117413351A (zh) | 2024-01-16 |
DE112022003089T5 (de) | 2024-04-04 |
JP2022191609A (ja) | 2022-12-28 |
TWI807794B (zh) | 2023-07-01 |
TW202300283A (zh) | 2023-01-01 |
KR20240004928A (ko) | 2024-01-11 |
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