WO2022260285A1 - 이종 금속 접합 전자 장치 하우징 및 이의 제조방법 - Google Patents
이종 금속 접합 전자 장치 하우징 및 이의 제조방법 Download PDFInfo
- Publication number
- WO2022260285A1 WO2022260285A1 PCT/KR2022/006327 KR2022006327W WO2022260285A1 WO 2022260285 A1 WO2022260285 A1 WO 2022260285A1 KR 2022006327 W KR2022006327 W KR 2022006327W WO 2022260285 A1 WO2022260285 A1 WO 2022260285A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal
- oxide film
- film layer
- metal part
- electronic device
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 343
- 239000002184 metal Substances 0.000 title claims abstract description 343
- 238000004519 manufacturing process Methods 0.000 title description 12
- 150000002739 metals Chemical class 0.000 title description 8
- 239000010410 layer Substances 0.000 claims description 199
- 239000011148 porous material Substances 0.000 claims description 77
- 239000011247 coating layer Substances 0.000 claims description 21
- 229910052719 titanium Inorganic materials 0.000 claims description 21
- -1 polybutylene terephthalate Polymers 0.000 claims description 20
- 239000004642 Polyimide Substances 0.000 claims description 16
- 229920001721 polyimide Polymers 0.000 claims description 16
- 239000010935 stainless steel Substances 0.000 claims description 16
- 229910001220 stainless steel Inorganic materials 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 229920006324 polyoxymethylene Polymers 0.000 claims description 15
- 229930040373 Paraformaldehyde Natural products 0.000 claims description 14
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 13
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 13
- 229910052749 magnesium Inorganic materials 0.000 claims description 13
- 229920006260 polyaryletherketone Polymers 0.000 claims description 13
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 13
- 229920006380 polyphenylene oxide Polymers 0.000 claims description 13
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 13
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 12
- 229920002530 polyetherether ketone Polymers 0.000 claims description 12
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 claims description 10
- 125000001153 fluoro group Chemical group F* 0.000 claims description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 9
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 8
- 230000000996 additive effect Effects 0.000 claims description 8
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000004417 polycarbonate Substances 0.000 claims description 7
- 229920000515 polycarbonate Polymers 0.000 claims description 7
- 239000000178 monomer Substances 0.000 claims description 6
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 5
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 4
- 239000004917 carbon fiber Substances 0.000 claims description 4
- 239000003365 glass fiber Substances 0.000 claims description 4
- 239000000454 talc Substances 0.000 claims description 4
- 229910052623 talc Inorganic materials 0.000 claims description 4
- 239000010456 wollastonite Substances 0.000 claims description 4
- 229910052882 wollastonite Inorganic materials 0.000 claims description 4
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910006501 ZrSiO Inorganic materials 0.000 claims description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 3
- 229920000058 polyacrylate Polymers 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 description 55
- 230000008569 process Effects 0.000 description 54
- 239000000243 solution Substances 0.000 description 24
- 238000007743 anodising Methods 0.000 description 23
- 239000010936 titanium Substances 0.000 description 23
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 239000011777 magnesium Substances 0.000 description 12
- 239000003792 electrolyte Substances 0.000 description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 8
- 238000004891 communication Methods 0.000 description 8
- 230000009257 reactivity Effects 0.000 description 8
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 6
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- 230000003472 neutralizing effect Effects 0.000 description 6
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 6
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 235000011121 sodium hydroxide Nutrition 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 229910001069 Ti alloy Inorganic materials 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 3
- 229920006351 engineering plastic Polymers 0.000 description 3
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 3
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 3
- 150000007524 organic acids Chemical class 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- 235000003270 potassium fluoride Nutrition 0.000 description 3
- 239000011698 potassium fluoride Substances 0.000 description 3
- 235000013024 sodium fluoride Nutrition 0.000 description 3
- 239000011775 sodium fluoride Substances 0.000 description 3
- 229910052938 sodium sulfate Inorganic materials 0.000 description 3
- 235000011152 sodium sulphate Nutrition 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- HAZJTCQWIDBCCE-UHFFFAOYSA-N 1h-triazine-6-thione Chemical compound SC1=CC=NN=N1 HAZJTCQWIDBCCE-UHFFFAOYSA-N 0.000 description 2
- 239000004393 Stigmasterol-rich plant sterol Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000003666 anti-fingerprint Effects 0.000 description 2
- 230000003373 anti-fouling effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000007745 plasma electrolytic oxidation reaction Methods 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- OMIHGPLIXGGMJB-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]hepta-1,3,5-triene Chemical compound C1=CC=C2OC2=C1 OMIHGPLIXGGMJB-UHFFFAOYSA-N 0.000 description 1
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/04—Metal casings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/0017—Casings, cabinets or drawers for electric apparatus with operator interface units
- H05K5/0018—Casings, cabinets or drawers for electric apparatus with operator interface units having an electronic display
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/0279—Improving the user comfort or ergonomics
- H04M1/0283—Improving the user comfort or ergonomics for providing a decorative aspect, e.g. customization of casings, exchangeable faceplate
Definitions
- Various embodiments of the disclosure below relate to a dissimilar metal junction electronic device housing and a manufacturing method thereof.
- Electronic devices include home appliances, electronic notepads, portable multimedia players, mobile communication terminals, tablet PCs, video/audio devices, desktop/laptop computers, vehicle navigation systems, etc. It can mean a device that performs. For example, these electronic devices may output stored information as sound or image.
- a single electronic device such as a mobile communication terminal may be equipped with various functions. For example, not only communication functions, but also entertainment functions such as games, multimedia functions such as music/video playback, communication and security functions for mobile banking, and functions such as schedule management and electronic wallets are integrated into one electronic device. have.
- the electronic device includes a housing made of various materials, and the electronic device housing may protect internal parts of the electronic device from external impact.
- the electronic device housing may be manufactured so that the device is easy to carry from the user's point of view and provides a sense of beauty to the user when in use.
- a housing in which two or more metals are bonded and a non-conductive part is coupled is provided.
- an oxide film layer is formed on the surface of the two or more metal parts, the oxide film layer includes a plurality of pores, and a non-conductive part is formed to cover at least a portion of a junction of the oxide film layer.
- an electronic device housing includes a first metal part including a first metal part, a second metal part including a second metal part, and a non-conductive part, and includes at least one surface of the first metal part.
- a first oxide film layer is formed on the portion, the first oxide film layer includes a plurality of first pores, each of the plurality of first pores has a first diameter in a first range,
- the second metal part is in contact with the first metal part, and a second oxide film layer is formed on at least one part of the surface of the second metal part, and the second oxide film layer includes a plurality of second pores.
- Each of the plurality of second pores may have a second diameter in a second range, and the non-conductive portion may cover at least a portion of a junction between the first oxide film layer and the second oxide film layer.
- the first metal and the second metal may be different.
- the first metal and the second metal may include at least one of Ti, Al, Mg, Zn, stainless steel (SS), Cu, liquid metal, and combinations thereof, respectively.
- the first range may be smaller than the second range.
- the first oxide film layer may have a first thickness
- the second oxide film layer may have a second thickness, and each of the first thickness and the second thickness may be 100 nm or more.
- the first oxide film layer and the second oxide film layer may include 1 at% or more of oxygen atoms and 0.01 at% or more of fluorine atoms, respectively.
- the non-conductive portion may fill the plurality of first pores, the plurality of second pores, or both.
- the non-conductive part is polybutylene terephthalate (PBT), polycarbonate (PC), polyphenylene sulfide (PPS), acrylonitrile butadiene styrene (ABS) , polyimide (PI, polyimide), polyoxymethylene (POM, polyoxymethylene), polyether ether ketone (PEEK), polyaryletherketone (PAEK), polyphenylene oxide (PPO) And it may include at least one of combinations thereof.
- PBT polybutylene terephthalate
- PC polycarbonate
- PPS polyphenylene sulfide
- ABS acrylonitrile butadiene styrene
- PI polyimide
- POM polyoxymethylene
- PEEK polyoxymethylene
- PAEK polyaryletherketone
- PPO polyphenylene oxide
- the non-conductive part may further include at least one additive selected from among glass fibers, carbon fibers, talc, wollastonite, and combinations thereof.
- Bonding strength between the first metal part and the second metal part may be 10 MPa to 100 MPa, and bonding strength between the first metal part and the second metal part and the non-conductive part may be 25 MPa or more.
- Each of the first oxide film layer and the second oxide film layer may contain 1 at% or more of fluorine atoms.
- the first metal part, the second metal part, or both may be formed in a coating layer on at least a second part of the surface.
- a coating layer may not be formed on the surface of the non-conductive portion.
- the coating layer Be 2 SiO 4 , Zn 2 SiO 4 , ZrSiO 4 , (M 1 2+ ) 3 (M 2 3+ ) 2 (SiO 4 ) 3 (M 1 is at least one of Ca, Mg and Fe, M 2 is at least one of Al, Cr, and Fe), a multifunctional (meth)acrylate polymer having a (meth)acrylic group, a polyfunctional urethane (meth)acrylate oligomer having 6 to 15 (meth)acrylic groups, and 2 to 6 At least one of a multifunctional (meth)acrylate monomer having two (meth)acryl groups, a fluorinated (meth)acrylate monomer, and a combination thereof may be included.
- an electronic device includes an electronic device housing, wherein the electronic device housing includes a first metal part including a first metal, a second metal part including a second metal, and a non-conductive part. wherein a first oxide film layer is formed on at least a portion of a surface of the first metal part, the first oxide film layer includes a plurality of first pores having a first diameter, and the second metal The part is in contact with the first metal part, and a second oxide film layer is formed on at least one part of the surface of the second metal part, and the second oxide film layer has a plurality of second pores having a second diameter. and, the non-conductive portion may cover at least a portion of a junction between the first oxide film layer and the second oxide film layer.
- the first metal part and the second metal part include at least one of Ti, Al, Mg, Zn, stainless steel (SS), Cu, liquid metal, and combinations thereof, respectively, and the first oxide film layer and the The second oxide film layer may include 1 at% or more of oxygen atoms and 0.01 at% or more of fluorine atoms, respectively.
- the electronic device may be at least one of a portable electronic device, a wearable electronic device, and a laptop.
- a method of manufacturing an electronic device housing includes a process of forming a metal bonded body by bonding a first metal and a second metal, a process of immersing the metal bonded body in a first solution and performing anodizing, and A process of injecting a resin onto the metal bonding body may be included.
- the first metal part and the second metal part include at least one of Ti, Al, Mg, Zn, stainless steel (SS), Cu, liquid metal, and combinations thereof, respectively, and the first oxide film layer and the The second oxide film layer may include 1 at% or more of oxygen atoms and 0.01 at% or more of fluorine atoms, respectively.
- the first solution further includes sulfuric acid, and the first solution includes at least one additive selected from among hydrochloric acid, phosphoric acid, nitric acid, oxalic acid, chromic acid, sulfamic acid, malonic acid, organic acid, sodium hydroxide, sodium sulfate, and combinations thereof. may further include.
- an electronic device housing includes a surface of a first metal portion including a plurality of first protrusions on a surface and a surface of a space between the first metal portion and the first protrusions adjacent to the plurality of first protrusions. Including all, the plurality of first protrusions may form a first antenna radiator.
- the electronic device housing further includes a second metal portion bonded to the first metal portion, the second protrusions include a plurality of second protrusions on a surface, and the plurality of second protrusions form a second antenna radiator.
- the non-conductive portion may be formed on a surface of the second metal portion and may fill a space between adjacent second protrusions of the plurality of second protrusions.
- a housing in which two or more metals are bonded and a non-conductive part is coupled may be provided as an electronic device housing.
- an oxide film layer is formed on the surface of the two or more metal parts, the oxide film layer includes a plurality of pores, and a non-conductive part is formed to cover at least a portion of the junction of the oxide film layer.
- FIG. 1 is a perspective view of the front of a mobile electronic device according to an embodiment.
- FIG. 2 is a perspective view of the back of the electronic device of FIG. 1;
- FIG. 3 is an exploded perspective view of the electronic device of FIG. 1 .
- FIG. 4 is a cross-sectional view of an electronic device housing, according to various embodiments.
- FIG. 5 is a cross-sectional view of an electronic device housing, according to various embodiments.
- FIG. 6 is a cross-sectional view of an electronic device housing, according to various embodiments.
- FIG. 7 is a flowchart illustrating a method of manufacturing an electronic device housing according to various embodiments of the present disclosure.
- FIG. 8 is a flowchart illustrating a method of manufacturing an electronic device housing according to various embodiments of the present disclosure.
- FIG. 9 is a schematic diagram of a tensile tester for measuring bonding force of an electronic device housing according to an embodiment.
- 10A and 10B are graphs showing EDS analysis results of a first oxide film layer and a second oxide film layer of an electronic device housing according to an embodiment.
- 11A and 11B are SEM (scanning electron microscope) images of a first oxide film layer and a second oxide film layer of an electronic device housing according to an embodiment.
- the electronic device 100 includes a first side (or front side) 110A, a second side (or back side) 110B, and a first side 110A and It may include a housing 110 including a side surface 110C surrounding a space between the second surfaces 110B.
- the housing may refer to a structure forming some of the first face 110A, the second face 110B, and the side face 110C of FIG. 1 .
- the first surface 110A may be formed by a front plate 102 (eg, a glass plate or a polymer plate including various coating layers) that is at least partially transparent.
- the second surface 110B may be formed by the substantially opaque back plate 111 .
- the rear plate 111 may be formed, for example, of coated or colored glass, ceramic, polymer, metal (eg, aluminum, stainless steel (SS), or magnesium), or a combination of at least two of the foregoing materials. It can be.
- the side surface 110C may be formed by a side bezel structure (or “side member”) 118 coupled to the front plate 102 and the rear plate 111 and including metal and/or polymer.
- the back plate 111 and the side bezel structure 118 may be integrally formed and include the same material (eg, a metal material such as aluminum).
- the front plate 102 includes two first regions 110D curved from the first surface 110A toward the rear plate 111 and extending seamlessly, the front plate 110D. (eg, at both long edges of the front plate 102).
- the rear plate 111 has two second regions 110E that are curved and seamlessly extended from the second surface 110B toward the front plate 102 at long edges. Can be included at both ends.
- the front plate 102 (or the rear plate 111) may include only one of the first regions 110D (or the second regions 110E). In another embodiment, some of the first regions 110D or the second regions 110E may not be included.
- the side bezel structure 118 when viewed from the side of the electronic device 100, is not included in the first areas 110D or the second areas 110E. It has a first thickness (or width) and may have a second thickness smaller than the first thickness at a side surface including the first regions 110D or the second regions 110E.
- the electronic device 100 includes a display 101, an audio module 103, 107, and 114, a sensor module 104, 116, and 119, a camera module 105, 112, and 113, and a key input. At least one of the device 117, the light emitting element 106, and the connector holes 108 and 109 may be included. In some embodiments, the electronic device 100 may omit at least one of the components (eg, the key input device 117 or the light emitting device 106) or may additionally include other components.
- the display 101 may be exposed through a substantial portion of the front plate 102, for example. In some embodiments, at least a portion of the display 101 may be exposed through the front plate 102 forming the first area 110D of the first surface 110A and the side surface 110C. In some embodiments, a corner of the display 101 may be substantially identical to an adjacent outer shape of the front plate 102 . In another embodiment, in order to expand the exposed area of the display 101, the distance between the outer edge of the display 101 and the outer edge of the front plate 102 may be formed substantially the same.
- a recess or opening is formed in a portion of the screen display area of the display 101, and the audio module 114 and the sensor module 104 are aligned with the recess or the opening. , a camera module 105 , and a light emitting device 106 .
- at least one of the audio module 114, the sensor module 104, the camera module 105, the fingerprint sensor 116, and the light emitting element 106 is provided on the rear surface of the screen display area of the display 101. may contain more than
- the display 101 may be combined with or disposed adjacent to a touch sensing circuit, a pressure sensor capable of measuring the intensity (pressure) of a touch, and/or a digitizer that detects a magnetic stylus pen. .
- at least a portion of the sensor modules 104 and 119 and/or at least a portion of the key input device 117 may be located in the first regions 110D and/or the second region 110E. can be placed in the field.
- the audio modules 103 , 107 , and 114 may include microphone holes 103 and speaker holes 107 and 114 .
- a microphone for acquiring external sound may be disposed inside the microphone hole 103, and in some embodiments, a plurality of microphones may be disposed to detect the direction of sound.
- the speaker holes 107 and 114 may include an external speaker hole 107 and a receiver hole 114 for communication.
- the speaker holes 107 and 114 and the microphone hole 103 may be implemented as one hole, or a speaker may be included without the speaker holes 107 and 114 (eg, a piezo speaker).
- the sensor modules 104 , 116 , and 119 may generate electrical signals or data values corresponding to an internal operating state of the electronic device 100 or an external environmental state.
- the sensor modules 104, 116, and 119 may include, for example, a first sensor module 104 (eg, a proximity sensor) and/or a second sensor module (eg, a proximity sensor) disposed on the first surface 110A of the housing 110.
- a fingerprint sensor e.g, a fingerprint sensor
- a third sensor module 119 eg, an HRM sensor
- a fourth sensor module 116 eg, a HRM sensor
- the fingerprint sensor may be disposed on the first surface 110A (eg, the display 101 as well as the second surface 110B) of the housing 110.
- the electronic device 100 may include a sensor module (not shown), for example, at least one of a gesture sensor, a gyro sensor, an air pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a color sensor, an IR (infrared) sensor, a bio sensor, a temperature sensor, a humidity sensor, or an illumination sensor may be further included. have.
- the camera modules 105, 112, and 113 include a first camera device 105 disposed on the first surface 110A of the electronic device 100 and a second camera device 112 disposed on the second surface 110B. ), and/or flash 113.
- the camera devices 105 and 112 may include one or a plurality of lenses, an image sensor, and/or an image signal processor.
- the flash 113 may include, for example, a light emitting diode or a xenon lamp.
- two or more lenses (an infrared camera, a wide-angle lens, and a telephoto lens) and image sensors may be disposed on at least one surface of the electronic device 100 .
- the key input device 117 may be disposed on the side surface 110C of the housing 110 .
- the electronic device 100 may not include some or all of the above-mentioned key input devices 117, and the key input devices 117 that are not included may include other key input devices such as soft keys on the display 101.
- the key input device may include a sensor module 116 disposed on the second side 110B of the housing 110 .
- the light emitting device 106 may be disposed on, for example, the first surface 110A of the housing 110 .
- the light emitting element 106 may provide, for example, state information of the electronic device 100 in the form of light.
- the light emitting device 106 may provide, for example, a light source that is interlocked with the operation of the camera module 105 .
- the light emitting device 106 may include, for example, an LED, an IR LED, and a xenon lamp.
- the connector holes 108 and 109 are a first connector hole 108 capable of receiving a connector (eg, a USB connector) for transmitting and receiving power and/or data to and from an external electronic device, and/or an external electronic device. and a second connector hole (eg, an earphone jack) 109 capable of accommodating a connector for transmitting and receiving an audio signal.
- a connector eg, a USB connector
- a second connector hole eg, an earphone jack
- the electronic device 300 includes a side bezel structure 310, a first support member 311 (eg, a bracket), a front plate 320, a display 330, and a printed circuit board 340. , a battery 350, a second support member 360 (eg, a rear case), an antenna 370, and a rear plate 380.
- the electronic device 300 may omit at least one of the components (eg, the first support member 311 or the second support member 360) or may additionally include other components.
- At least one of the components of the electronic device 300 may be the same as or similar to at least one of the components of the electronic device 100 of FIG. 1 or 2 , and duplicate descriptions will be omitted below.
- the first support member 311 may be disposed inside the electronic device 300 and connected to the side bezel structure 310 or integrally formed with the side bezel structure 310 .
- the first support member 311 may be formed of, for example, a metal material and/or a non-metal (eg, polymer) material.
- the display 330 may be coupled to one surface of the first support member 311 and the printed circuit board 340 may be coupled to the other surface.
- a processor, memory, and/or interface may be mounted on the printed circuit board 340 .
- the processor may include, for example, one or more of a central processing unit, an application processor, a graphics processing unit, an image signal processor, a sensor hub processor, or a communication processor.
- Memory may include, for example, volatile memory or non-volatile memory.
- the interface may include, for example, a high definition multimedia interface (HDMI), a universal serial bus (USB) interface, an SD card interface, and/or an audio interface.
- HDMI high definition multimedia interface
- USB universal serial bus
- the interface may electrically or physically connect the electronic device 300 to an external electronic device, and may include a USB connector, an SD card/MMC connector, or an audio connector.
- the battery 350 is a device for supplying power to at least one component of the electronic device 300, and may include, for example, a non-rechargeable primary battery, a rechargeable secondary battery, or a fuel cell. . At least a portion of the battery 350 may be disposed on a substantially coplanar surface with the printed circuit board 340 , for example. The battery 350 may be integrally disposed inside the electronic device 300 or may be disposed detachably from the electronic device 300 .
- the antenna 370 may be disposed between the rear plate 380 and the battery 350 .
- the antenna 370 may include, for example, a near field communication (NFC) antenna, a wireless charging antenna, and/or a magnetic secure transmission (MST) antenna.
- the antenna 370 may, for example, perform short-range communication with an external device or wirelessly transmit/receive power required for charging.
- an antenna structure may be formed by a part of the side bezel structure 310 and/or the first support member 311 or a combination thereof.
- FIG. 4 is a cross-sectional view of an electronic device housing, according to various embodiments.
- an electronic device housing 400 is a cross section of a part (eg, a part of a side bezel) of a housing of an electronic device (eg, the electronic device 100 of FIG. 1 ), and is made of metal.
- a portion and a non-conductive portion may be included.
- at least a portion of the metal portion may be used as an antenna radiator, and at least a portion of the non-conductive portion may be formed in the middle of the metal portion to electrically disconnect at least a portion of the metal portion so that the metal portion may be used as an antenna radiator.
- the +X direction of FIG. 4 is the outer direction of the electronic device 100 (for example, toward the edge), and the -X direction is the inner direction of the electronic device 100 (for example, the center of the electronic device 100). direction), but the arrangement direction of the metal part and the non-conductive part is not limited.
- the electronic device housing 400 may include a first metal part 410 , a second metal part 420 and a non-conductive part 430 .
- the first metal portion 410 includes the first metal, and a first oxide film layer 411 may be formed on at least one portion of the surface.
- the second metal portion 420 includes the second metal, and a second oxide film layer 421 may be formed on at least one portion of the surface.
- the first oxide film layer 411 may include a plurality of first pores 412, and a plurality of first protrusions may be formed between adjacent first pores 412, ,
- the second oxide film layer 421 may include a plurality of second pores 422 and a plurality of second protrusions may be formed between adjacent second pores 422 .
- the first pore 412 and the second pore 422 may have the same or different diameters and/or depths.
- the first pore 412 may have a diameter in a first range
- the second pore 422 may have a diameter in a second range.
- Each of the plurality of first pores 412 may have at least one of the same diameter, height, and/or shape as or different from each other.
- Each of the plurality of second pores 422 may have at least one of the same diameter, height, and/or shape as or different from each other.
- the non-conductive portion 430 may be formed to cover at least a portion of the junction 440 of the first oxide film layer 411 and the second oxide film layer 421 .
- the first oxide film layer 411 and the second oxide film layer 421 are formed by performing an anodizing process in a state in which the first metal part 410 and the second metal part 420 are bonded.
- An oxide film may be formed on the surface of each of the metal part 410 and the second metal part 420, and the first oxide film layer 411 and the second oxide film layer 421 thus formed are also in contact to form a junction 440. can do.
- the first metal part 410 and the second metal part 420 may be formed to contact each other.
- the +X direction surface of the first metal part 410 and the -X direction surface of the second metal part 420 may be bonded by welding, using an adhesive material, or by casting.
- the first oxide film layer 411 and the second oxide film layer 421 formed on the respective surfaces of the first metal part 410 and the second metal part 420 may also be formed to contact each other.
- the first oxide film layer 411 and the second oxide film layer 421 are formed by performing an anodizing process while the first metal part 410 and the second metal part 420 are adhered to each other.
- 410 and the second metal portion 420 may be formed by being adhered to each other.
- the first oxide film layer 411 and the second oxide film layer 421 form a junction 440
- the non-conductive portion 430 is a junction 440 between the first oxide film layer 411 and the second oxide film layer 421. It may be formed to cover at least a portion of.
- the surface of the first oxide film layer 411 in the +X direction may be formed by at least partially contacting the surface and the surface of the second oxide film layer 421 in the -X direction.
- the first oxide film layer 411 and the second oxide film layer 421 are each formed with a plurality of pores open to the outside, and the non-conductive portion 430 is the first oxide film layer 411 and It may be formed to fill each of the pores included in the second oxide film layer 421 .
- the first pores 412 and the second pores 422 formed in the first oxide film layer 411 and the second oxide film layer 421, respectively may be formed to open in the +Y direction, respectively. .
- the first oxide film layer 411 and the second oxide film layer 421 are formed on the surfaces of the first metal part 410 and the second metal part 420, respectively, to bond to the non-conductive part.
- the adhesion area between the oxide film layer and the non-conductive portion may be increased by increasing the adhesion area due to the inner walls of the pores formed in the oxide film layer.
- each of the first oxide film layer 411 and the second oxide film layer 421 may have a plurality of pores formed therein, and resin injected in the process of forming the non-conductive portion 430 by the pores may be formed. It can adhere well.
- the first metal and the second metal may be different.
- the second metal included in the external direction eg, the +X direction
- the second metal included in the external direction may be a metal having at least one of luminance and/or intensity greater than at least one of luminance and/or intensity of the first metal.
- a metal with high strength to protect the inside or a high luminance to provide a beautiful appearance may be used as the second metal facing the outside.
- the weight per size of the first metal included in the inward direction (eg, -X direction) may be smaller than the weight of the second metal in the outer direction. In other words, the density of the first metal may be less than that of the second metal.
- a metal for reducing the weight of the electronic device housing 400 may be used as the first metal in the inward direction.
- the second metal may include Ti or stainless steel (SS).
- the second metal may include an alloy.
- the second metal may include a Ti alloy having a purity of 80% or more.
- the first metal may include Al.
- the first metal may include an alloy.
- the first metal may include an Al alloy having a purity of 70% or more.
- the types of the first metal and the second metal are not limited thereto. For example, those skilled in the art will easily understand that a material made of a junction of different materials such as SS-Al, SS-Mg, Al-Mg, or Ti-Mg may be used.
- the second metal in the outer direction may be a metal having a higher hardness than the first metal in the inner direction.
- the first metal in the inward direction may have higher ductility than the second metal in the outward direction.
- the first metal and the second metal may each include at least one of Ti, Al, Mg, Zn, SS, Cu, a liquid metal, and combinations thereof, but is not limited thereto.
- each of the first metal and the second metal may include a clad metal in which two or more metals are stacked.
- the first range of the diameter of the first pore may be smaller than the second range of the diameter of the second pore.
- the first range may be 20 nm to 40 nm
- the second range may be 50 nm to 100 nm.
- a metal eg, a first metal, a second metal constituting the metal part (eg, the first metal part 410 and the second metal part 420) and an oxide film (eg, the first metal part 410)
- the diameter and depth of the pores may be determined by the difference in reactivity with the electrolyte for forming the oxide film layer 411 and the second oxide film layer 421 .
- the oxide film formation speed is faster than the pore formation speed, so that the diameter of the pore can be formed small.
- the pore formation speed is faster than the oxide film formation speed, so that the diameter of the pore may be large.
- the oxide film layer can be formed thickly, and if the reactivity between the metal constituting the metal part and the electrolyte for oxide film formation is low, the oxide film layer can be formed thin. have.
- the first oxide film layer 411 has a first thickness
- the second oxide film layer 421 has a second thickness
- the first thickness and the second thickness are , respectively may be 100 nm or more.
- pores may be formed in the oxide film layer, and a barrier layer in which pores are not formed may be formed.
- pores may be formed in the -Y direction from the surface, and as shown in FIG. 4, the first pore layer 413 in which pores are formed ) and the first barrier layer 414 .
- the first thickness of the first oxide film layer 411 may be the sum of the thickness of the first pore layer 413 and the thickness of the first barrier layer 414 .
- pores may be formed in the -Y direction from the surface, and the second pore layer 423 in which the pores are formed and the second barrier layer ( 424) may be included.
- the second thickness of the second oxide film layer 421 may be the sum of the thickness of the second pore layer 423 and the thickness of the second barrier layer 424 .
- the first thickness and the second thickness may be different.
- the first thickness and the second thickness are, respectively, the reactivity between the first metal part 410 and the electrolyte for forming the oxide film and the reactivity between the second metal part 420 and the electrolyte for forming the oxide film.
- the anodizing process is performed on the first metal part 410 and the second metal part 420, pores may be formed in the -Y direction from the respective surfaces, and each metal part and the electrolyte may be formed. Depending on the reactivity of the pore depth and the thickness of the barrier layer can be determined.
- the first thickness of the first oxide film layer and the second thickness of the second oxide film layer may be 100 nm or more, respectively.
- the first thickness or the second thickness is less than 100 nm, respectively, to cover at least a portion of the first metal portion, the second metal portion, and the junction between the first oxide film layer 411 and the second oxide film layer 421
- the formed non-conductive portion may not be sufficiently bonded and may be peeled off.
- the first thickness or the second thickness may be 1 ⁇ m or more. According to various embodiments, the first thickness may be 1 ⁇ m or more, and the second thickness may be 1 ⁇ m or less.
- the first thickness may be greater than or less than the second thickness, the first thickness may be 1.4 ⁇ m or more, and the second thickness may be 300 nm or more.
- the first oxide film layer 411 and the second oxide film layer 421 may include 1 at% or more of oxygen atoms and 0.01 at% or more of fluorine atoms, respectively.
- each of the first oxide film layer 411 and the second oxide film layer 421 may be an oxide film layer formed by an electrolyte for forming an oxide film. It is immersed in an electrolyte for forming an oxide film, and an oxide film layer containing oxygen and fluorine components may be formed on the metal part through an anodizing process.
- the first oxide film layer 411 and the second oxide film layer 421 may each contain 1 at% or more of fluorine atoms, and preferably, 2 at% or more of fluorine atoms.
- the first oxide film layer 411 and the second oxide film layer 421 have 1 at% or more, 2 at% or more, 3 at% or more, 4 at% or more, 5 at% or more, respectively. 6 at% or more, 7 at% or more, 8 at% or more, 9 at% or more or 10 at% or more.
- the non-conductive portion 430 may be formed to fill the first pores of the first oxide film layer 411, the second pores of the second oxide film layer 421, or both. .
- the non-conductive portion 430 may be formed to cover at least a portion of the junction 440 of the first oxide film layer 411 and the second oxide film layer 421, and the first oxide film layer ( 411) and the second oxide film layer 421 may be formed to cover at least a portion of the surface.
- the surface of each of the first oxide film layer 411 and the second oxide film layer 421 has no pores formed among the surfaces of each of the first oxide film layer 411 and the second oxide film layer 421.
- the portion and the inner walls of pores (eg, first pores 412 and second pores 422) formed in each of the first oxide film layer 411 and the second oxide film layer 421 may be included.
- the non-conductive portion 430 is bonded to the first metal portion 410 and the second metal portion 420 to form at least one of the first metal portion 410 and/or the second metal portion 420.
- electrically disconnecting a portion at least a portion of the first metal portion 410 and/or the second metal portion 420 may be used as an antenna of an electronic device.
- the non-conductive portion 430 may not be separated from the first metal portion 410 and the second metal portion 420 through sufficient bonding.
- the non-conductive portion 430 is formed to fill the first pores of the first oxide film layer 411, the second pores of the second oxide film layer 421, or both, so that the first oxide film layer ( 411), the second oxide film layer 421, or both of them with a larger surface area, so that a greater bonding force can be formed.
- the non-conductive portion 430 may include polybutylene terephthalate (PBT), polycarbonate (PC), polyphenylene sulfide (PPS), or acrylonitrile butadiene.
- Styrene ABS, acrylonitrile butadiene styrene
- PI polyimide
- POM polyoxymethylene
- PEEK polyether ether ketone
- PAEK polyaryletherketone
- PPO polyphenylene oxide
- PPO polyphenylene oxide
- the non-conductive portion 430 may include engineering plastics.
- Engineering plastics are plastics that have heat resistance of 100° C. or higher and have high strength, and are excellent in impact resistance, abrasion resistance, cold resistance, chemical resistance, electrical insulation, and the like.
- the type of plastic that may be included in the non-conductive portion is not limited.
- the non-conductive portion 430 may further include at least one additive of glass fiber, carbon fiber, talc, wollastonite, and combinations thereof.
- the non-conductive portion 430 may further include an additive, and at least one of heat resistance, strength, impact resistance, and/or wear resistance of the non-conductive portion may be improved.
- the first metal part 410 and the second metal part 420 may have bonding strength of 10 MPa to 100 MPa.
- the first metal part 410 and the second metal part 420 are bonded, and preferably, may be bonded with a bonding force of 20 MPa to 100 MPa.
- bonding strength between the first metal part 410 and the non-conductive part 430 and bonding strength between the second metal part 420 and the non-conductive part 430 may be 25 MPa or more, respectively.
- the non-conductive portion 430 includes a first oxide film layer 411 formed on the surface of the first metal part 410 and a second oxide film layer formed on the surface of the second metal part 420 ( 421) may be formed to cover at least a portion.
- the non-conductive portion 430 may be formed on at least a portion of the first oxide film layer 411 and the second oxide film layer 421, and may be formed on the first oxide film layer 411 and the second oxide film layer 411.
- the film layer 421 can form a bonding strength of 25 MPa or more with the non-conductive portion 430, respectively.
- the bonding force with the non-conductive portion 430 is less than 25 MPa, some or all of the non-conductive portion 430 may be peeled off, and thus the housing 400 may not be usable as an electronic device housing.
- the electronic device housing 400 may have a vacuum degree of 1.0 ⁇ 10 -9 Pa m 3 /s or less according to a helium leak test according to ASTM E499. Through the helium leak test, it is possible to check whether the helium gas passes through and to check the airtightness of the joint. Since the greater the degree of vacuum according to the helium leak test, more helium gas passes through, it can be confirmed that the bonding of the electronic device housing is weak.
- the electronic device housing 400 may have an ingress protection rating of IPX6 or higher according to IEC60529, which is a standard of the International Electrotechnical Commission (IEC).
- IEC60529 which is a standard of the International Electrotechnical Commission (IEC).
- the performance of the electronic device housing 400 may be measured according to IEC60529, a standard standard of the International Electrotechnical Commission. According to IEC60529, if it is water resistant when it is sprayed with 100 kPa water at 100 L/min in all directions at a distance of 3 meters for 3 minutes, it can receive a grade 6.
- the electronic device housing 400 has a waterproof grade of 6 or higher, and the waterproof performance may be due to a bonding film formed between the first metal part 410 and the second metal part 420 .
- FIG. 5 is a cross-sectional view of an electronic device housing, according to various embodiments.
- the electronic device housing 500 includes a first metal part 510 (eg, the first metal part 410 of FIG. 4 ) and a second metal part 520 (eg, the first metal part 410 of FIG. 4 ).
- the coating layer 550 may be formed on at least one portion (eg, the second portion 551) of the second metal portion 420 or both of the surfaces.
- the first metal part 510, the second metal part 520, or both, the first oxide film layer 511 is formed on at least one part of the surface.
- a second oxide film layer 521 eg, the second oxide film layer 421 of FIG.
- the coating layer 550 includes the first oxide film layer 511 and the second oxide film layer 521 ) may be formed on at least one part of the surface of the first metal part 510 and the second metal part 520 on which no is formed.
- the coating layer 550 imparts functionality to the electronic device housing, and specifically, at least one of antistatic, antifingerprint, antifouling, antiscratch, low refractive index, antireflection, and/or shock absorption. effect can be given.
- the coating layer 550 may not be formed on the non-conductive portion 530 (eg, the non-conductive portion 430 of FIG. 4 ). In addition, even if the coating layer is formed on the non-conductive portion 530, the coating layer may not be formed through a separate coating layer removal process (eg, a laser cutting process).
- the coating layer 550 may include Be 2 SiO 4 , Zn 2 SiO 4 , ZrSiO 4 , (M 1 2+ ) 3 (M 2 3+ ) 2 (SiO 4 ) 3 (M 1 is Ca, At least one of Mg and Fe, M 2 is at least one of Al, Cr, and Fe), a multifunctional (meth)acrylate polymer having a (meth)acrylic group, and a multifunctional urethane having 6 to 15 (meth)acrylic groups (metha) ) It may include at least one of an acrylate oligomer, a multifunctional (meth)acrylate monomer having 2 to 6 (meth)acrylic groups, a fluorinated (meth)acrylate monomer, and a combination thereof, but is not limited thereto.
- the electronic device housing 400 may be formed to surround the electronic device.
- an electronic device surrounded by an electronic device housing 400 includes a first metal part 410 including a first metal and a second metal including a second metal. It includes a portion 420 and a non-conductive portion 430, and a first oxide film layer 411 is formed on the surface of the first metal part 410, and the first oxide film layer 411 has a first It includes a plurality of pores having a diameter, and the second metal part 420 is formed to contact the first metal part 410, and the second metal part 420 has a second metal part 420 on the surface.
- the second oxide film layer 421 includes a plurality of pores having a second diameter
- the non-conductive portion 430 includes the first oxide film layer 411 and the second It may be formed to cover at least a portion of the junction of the oxide film layer 421 .
- the electronic device may include a portable electronic device, a wearable electronic device, and a laptop, but the type is not limited.
- An electronic device housing 400 is a cross section of a part of a housing of an electronic device (eg, the electronic device 100 of FIG. 1 ) and may include a metal part and a non-conductive part.
- the electronic device housing 400 may include a first metal part 410 , a second metal part 420 and a non-conductive part 430 .
- the first metal part 410 may include a first metal, for example, aluminum (Al) metal.
- the second metal part 420 may include a second metal, for example, titanium (Ti) metal.
- the first metal part 410 including aluminum metal is positioned in the inner direction of the electronic device housing 400
- the second metal part 420 containing titanium metal is positioned in the outer direction of the electronic device housing 400.
- aluminum metal may be light
- titanium metal may have high at least one of luminance and/or strength.
- the internal direction and the external direction of the electronic device housing 400 may refer to an internal direction and an external direction based on the electronic device 100 , respectively.
- An oxide film layer may be formed on at least one portion of surfaces of the first metal part 410 containing aluminum and the second metal part 420 containing titanium.
- the first oxide film layer 411 may be formed on at least one part of the surface of the first metal part 410, and the second oxide film layer 411 may be formed on at least one part of the surface of the second metal part 420.
- a coating layer 421 may be formed.
- the first oxide film layer 411 and the second oxide film layer 421 are bonded to the first metal part 410 and the second metal part 420 in a first solution (eg, electrolyte solution). It may be immersed in, and pores may be formed in the first oxide film layer 411 and the second oxide film layer 421.
- a first solution eg, electrolyte solution
- the first pores 412 formed in the first oxide film layer 411 have a diameter in a first range
- the second pores 422 formed in the second oxide film layer 421 have a second diameter. It may have a range of diameters.
- Each of the plurality of first pores 412 may have at least one of the same or different diameter, height, and/or shape
- each of the plurality of second pores 422 may have at least one of the diameter, height, and/or shape.
- One may be the same or different from each other.
- the first solution in which the first metal part 410 and the second metal part 420 are immersed is at least one of acidic ammonium fluoride, hydrofluoric acid, sodium fluoride, potassium fluoride, ammonium fluoride, and combinations thereof.
- Fluoride may be included in an amount of 0.1% to 5% by weight, and fluorine may be detected in the first oxide film layer 411 and the second oxide film layer 421 .
- each of the first oxide film layer 411 and the second oxide film layer 421 may contain 0.01 at% or more of fluorine.
- the non-conductive portion 430 may be formed to fill at least one of the pores of the first oxide film layer 411 and/or the pores of the second oxide film layer 421 .
- the non-conductive portion 430 includes polybutylene terephthalate (PBT), polycarbonate (PC), polyphenylene sulfide (PPS), and acrylonitrile butadiene styrene (ABS). styrene), polyimide (PI, polyimide), polyoxymethylene (POM), polyether ether ketone (PEEK), polyaryletherketone (PAEK), polyphenylene oxide (PPO) oxide) and combinations thereof.
- at least a portion of the first metal part 410 and the second metal part 420 may be used as an antenna radiator (eg, a first antenna radiator and a second antenna radiator, respectively), and may be a non-conductive portion. At least a portion of 430 may provide electrical disconnection so that at least a portion of the metal portion (eg, the first metal portion 410 and the second metal portion 420 ) is used as an antenna radiator.
- FIG. 6 is a cross-sectional view of an electronic device housing, according to various embodiments.
- the electronic device housing 600 is a housing (eg, the housing 110 of FIG. 1 ) of an electronic device (eg, the electronic device 100 of FIG. 1 ) and represents a positional relationship between components. , Each component is not limited to these structures and locations.
- an electronic device housing 600 (eg, the electronic device housing 400 of FIG. 4 ) includes a first metal part 610 (eg, the first metal part 410 of FIG. 4 ), a second It may include a metal part 620 (eg, the second metal part 420 of FIG. 4 ) and a non-conductive part 630 (eg, the non-conductive part 430 of FIG. 4 ), and the first metal part 610 And, of course, an oxide film layer may be formed on the surface of the second metal part 620 as an anodizing process is performed, respectively.
- the electronic device housing 600 is a part of a housing of an electronic device (eg, the electronic device 100 of FIG.
- the first metal part 610 may be positioned in an inner direction ( ⁇ X direction) and the second metal part 620 may be positioned in an outer direction (+X direction) and included in the first metal part 610.
- the first metal to be used is a metal for reducing the weight of the electronic device housing 500, and a metal lighter than the second metal included in the second metal part 620 may be used.
- the second metal part 620 includes a second metal, and the second metal may use a metal with high strength to protect the inside or a metal with high luminance to provide a beautiful appearance.
- the second metal may be a metal having at least one of luminance and/or intensity greater than that of the first metal.
- the non-conductive portion 630 may be formed to cover at least a portion of a junction between the first metal portion 610 and the second metal portion 620 (the joint portion 440 of FIG. 4 ), and the first metal portion 610 ) and may be bonded to the surface of the second metal part 620 .
- the first metal and the second metal may be different.
- each of the first metal and the second metal may include at least one of Ti, Al, Mg, Zn, SS, Cu, a liquid metal, and combinations thereof.
- the first diameter of the first pores of the first oxide film layer may be smaller than the second diameter of the second pores of the second oxide film layer.
- the first oxide film layer (eg, the first oxide film layer 411 of FIG. 4 ) has a first thickness
- the second oxide film layer eg, the second oxide film layer 411 of FIG. 4 ( 421)
- the first thickness and the second thickness may be 100 nm or more, respectively.
- the first oxide film layer eg, the first oxide film layer 411 of FIG. 4
- the second oxide film layer eg, the second oxide film layer 421 of FIG. 4
- oxygen It may contain 1 at% or more atoms and 0.01 at% or more fluorine atoms.
- the non-conductive portion (eg, the non-conductive portion 430 of FIG. 4 ) includes the first pores of the first oxide film layer (eg, the first oxide film layer 411 of FIG. 4 ), the second It may be formed to fill the second pores or both of the oxide film layer (eg, the second oxide film layer 421 of FIG. 4 ).
- the non-conductive portion may include polybutylene terephthalate (PBT), polycarbonate (PC), polyphenylene sulfide (PPS, polyphenylene sulfide), acrylonitrile butadiene styrene (ABS, acrylonitrile butadiene styrene), polyimide (PI, polyimide), polyoxymethylene (POM), polyether ether ketone (PEEK), polyaryl It may include at least one of ether ketone (PAEK, polyaryletherketone), polyphenylene oxide (PPO, polyphenylene oxide), and combinations thereof.
- PBT polybutylene terephthalate
- PC polycarbonate
- PPS polyphenylene sulfide
- ABS acrylonitrile butadiene styrene
- PI polyimide
- POM polyoxymethylene
- PEEK polyether ether ketone
- PAEK ether ketone
- PPO polypheny
- the non-conductive portion may further include at least one additive of glass fiber, carbon fiber, talc, wollastonite, and combinations thereof.
- the bonding force between the first metal part (eg, the first metal part 410 of FIG. 4 ) and the second metal part (eg, the second metal part 420 of FIG. 4 ) is, It may be 10 MPa to 100 MPa.
- the first metal part eg, the first metal part 410 of FIG. 4
- the second metal part eg, the second metal part 420 of FIG. 4
- the A bonding force of 25 MPa or more may be formed with the non-conductive portion (eg, the non-conductive portion 430 of FIG. 4 ).
- the electronic device housing (eg, the electronic device housing 400 of FIG. 4 ) may have a vacuum degree of 1.0 ⁇ 10 -9 Pa m 3 /s or less according to a helium leak test according to ASTM E499.
- the electronic device housing (eg, the electronic device housing 400 of FIG. 4 ) may have a rating of IPX6 or higher according to IEC60529, a standard standard of the International Electrotechnical Commission (IEC).
- IEC60529 a standard standard of the International Electrotechnical Commission
- the electronic device may be at least one of a portable electronic device, a wearable electronic device, and a laptop.
- FIG. 7 is a flowchart illustrating a method of manufacturing an electronic device housing according to various embodiments of the present disclosure.
- a method of manufacturing an electronic device housing includes a process of forming a metal assembly by bonding a first metal and a second metal (710), and a process of immersing and anodizing the metal assembly in a first solution. (720) and a process (730) of injecting a resin onto the metal bonding body.
- the process 710 of forming a metal bonded body is formed by bonding the first metal and the second metal, welding the first metal and the second metal, using an adhesive material, casting or Bonding may be performed through caulking.
- the metal junction may include the first metal part 410 and the second metal part 420 shown in FIG. 4 .
- the first metal and the second metal may include at least one of Ti, Al, Mg, Zn, SS, Cu, liquid metal, and combinations thereof, but are not limited thereto.
- each of the first metal and the second metal may include a clad metal formed by stacking two or more metals.
- At least one of Ti, Al, Mg, Zn, SS, Cu, liquid metal, and a combination thereof is selected to weld a first metal and a second metal, or , bonding may be performed using an adhesive material, or through casting or caulking.
- a blasting process or a laser hatching process may be performed after the metal joint body is formed. Through the blasting process, scale, rust, coating, etc. of the metal assembly can be cleaned.
- the first solution may include 0.1 wt% to 10 wt% of at least one fluoride selected from among acidic ammonium fluoride, hydrofluoric acid, sodium fluoride, potassium fluoride, and ammonium fluoride, and combinations thereof.
- at least one fluoride selected from among acidic ammonium fluoride, hydrofluoric acid, sodium fluoride, potassium fluoride, and ammonium fluoride, and combinations thereof.
- the first solution may include fluoride.
- Fluoride in particular, can easily form an oxide film on titanium (Ti) metal.
- the first solution may further include triazine thiol.
- Triazinethiol may be represented by Formula 1 below.
- the first solution further includes sulfuric acid
- the first solution includes hydrochloric acid, phosphoric acid, nitric acid, oxalic acid, chromic acid, sulfamic acid, malonic acid, organic acids, sodium hydroxide, sodium sulfate, and combinations thereof.
- At least one additive may be further included.
- the anodizing process 720 may be performed by applying a current at a temperature of 20 °C to 80 °C and a voltage of 10 V to 30 V.
- the resin injection process 730 includes polybutylene terephthalate (PBT), polycarbonate (PC), polyphenylene sulfide (PPS), and acrylonite.
- PBT polybutylene terephthalate
- PC polycarbonate
- PPS polyphenylene sulfide
- acrylonite acrylonitrile butadiene styrene
- ABS polyimide
- POM polyoxymethylene
- PEEK polyether ether ketone
- PAEK polyaryletherketone
- PPO polyphenylene oxide
- a non-conductive portion having low conductivity may be formed according to the resin injection process 630 .
- FIG. 8 is a flowchart illustrating a method of manufacturing an electronic device housing according to various embodiments of the present disclosure.
- a method of manufacturing an electronic device housing includes a process 810 of forming a metal bonded body by bonding a first metal and a second metal (process 710 of forming a metal bonded body in FIG. 7 ), the metal Step 820 of immersing the joined body in the first solution to anodize (anodizing step 720 of FIG. 7) and step 830 of injecting a resin onto the metal joined body (injecting the resin Process 730) may be included.
- the manufacturing method of the electronic device housing includes, before performing the anodizing process 820 (anodizing process 720 of FIG. 7 ), a process 840 of cleaning the metal assembly, the metal assembly A process of removing an oxide film of (850) and a process of neutralizing the surface of the metal junction (860) may optionally be further included.
- the process 840 of cleaning the metal assembly may be performed at 20 °C to 60 °C and may be performed using ultrasonic waves.
- the process 840 of cleaning the metal junction may be performed using a second solution containing a surfactant.
- the process 850 of removing the oxide film of the metal assembly may be performed using a strong alkaline third solution such as caustic soda, and since the third solution is strongly alkaline, the surface of the metal assembly Smut may occur.
- a process of immersing the metal junction in a fourth solution containing at least one of nitric acid, sulfuric acid and fluoride may be additionally performed to remove smut.
- the process of immersing the metal assembly in the fourth solution may be performed for 10 seconds to 600 seconds, and may be performed at 20 °C to 70 °C, preferably 20 °C to 50 °C.
- the process 860 of neutralizing the surface of the metal assembly may be performed to neutralize the surface and remove contaminants interfering with the formation of an oxide film.
- the process 860 of neutralizing the surface of the metal junction may be performed by immersing the surface in a fifth solution containing at least one of sulfuric acid, nitric acid, and fluoride.
- the process of neutralizing the surface of the metal assembly (860) may be performed at 20 °C to 70 °C and may be performed for 30 seconds to 600 seconds.
- a method of manufacturing an electronic device housing includes, after the resin injection process 830, PVD, CVD, wet plating, electrodeposition, painting, PEO (plasma electrolytic oxidation), anodizing, and printing on a metal bonded body.
- a process of forming a coating layer (eg, the coating layer 550 of FIG. 5 ) using at least one of the methods may be further included.
- the electronic device housing may include a coating layer (eg, the coating layer 550 of FIG. 5 ) exhibiting at least one effect of antistatic, antifingerprint, antifouling, antiscratch, low refractive index, antireflection, and/or shock absorption. ) can be formed.
- a coating layer eg, the coating layer 550 of FIG. 5
- an excellent touch feeling can be imparted to the electronic device and contamination can be prevented from occurring.
- the first solution may include 0.1 wt% to 5 wt% of at least one fluoride selected from acidic ammonium fluoride, hydrofluoric acid, sodium fluoride, potassium fluoride, ammonium fluoride, and combinations thereof.
- at least one fluoride selected from acidic ammonium fluoride, hydrofluoric acid, sodium fluoride, potassium fluoride, ammonium fluoride, and combinations thereof.
- the first solution further includes sulfuric acid
- the first solution includes hydrochloric acid, phosphoric acid, nitric acid, oxalic acid, chromic acid, sulfamic acid, malonic acid, organic acids, sodium hydroxide, sodium sulfate, and combinations thereof.
- At least one additive may be further included.
- the anodizing process (eg, the anodizing process 720 of FIG. 7 ) may be performed by applying a current at a temperature of 20 °C to 80 °C and a voltage of 10 V to 30 V.
- a process of cleaning the metal assembly (eg, FIG. 8 ) Step 840 of cleaning the metal junction) Step of removing the oxide film of the metal junction (eg, step 850 of removing the oxide film of the metal junction of FIG. 8) and process of neutralizing the surface of the metal junction (eg, process 860 of neutralizing the surface of the metal joint of FIG. 8) may be further included.
- Aluminum alloys and titanium alloys can be prepared. At this time, the purity of the aluminum alloy is 70% to 100%, and the purity of the titanium alloy may belong to 80% to 100%.
- a metal assembly in which the aluminum alloy and the titanium alloy are joined through a casting process may be immersed in a solution containing a surfactant and washed. An oxide film present on the surface may be removed by immersing the metal junction in an alkaline solution containing sodium hydroxide. During immersion in an alkaline solution, smut may be generated. Thereafter, the metal conjugate may be immersed in an acid solution to remove it, and then immersed in a sulfuric acid aqueous solution for 60 seconds to neutralize.
- An anodizing process may be performed by immersing the pretreated metal assembly in an aqueous solution of sulfuric acid containing fluoride and triazinethiol.
- the aqueous sulfuric acid solution may include 1 to 3% by weight of acidic ammonium fluoride and hydrofluoric acid, 1 to 3% by weight of sulfuric acid, and the balance is water.
- the anodizing process may be performed by applying a voltage of 10 V to 30 V at a temperature of 20 °C to 80 °C, and an oxide film layer may be formed on one surface of the metal assembly.
- a resin containing at least one engineering plastic selected from among polycarbonate, acrylonitrile butadiene styrene, polybutylene terephthalate, and polyaryl ether ketone is injected onto the anodized film layer to manufacture an electronic device housing.
- the bonding force of the electronic device housing can be measured.
- 9 is a schematic diagram of a tensile tester for measuring bonding force of an electronic device housing according to an embodiment.
- the tensile force at the time when the resin and the metal part are completely separated by pulling the tensile tester 950 in the direction of the arrow may be measured.
- the bonding force formed with the resin and the aluminum metal part and the titanium metal part, respectively, can be measured and shown in Table 1 below.
- Components of the oxide film layer formed on the surface of each metal part can be analyzed. Components of the oxide film layer formed on the surface of each metal part can be analyzed through EDS (Energy Dispersive X-ray Spectroscopy). Components of each oxide film layer can be represented as shown in FIGS. 10a and 10b and Table 2 below.
- 10A and 10B are graphs showing EDS analysis results of a first oxide film layer and a second oxide film layer of an electronic device housing according to an embodiment.
- the EDS analysis result of the aluminum metal part can be confirmed, and referring to FIG. 10B, the EDS analysis result of the titanium metal part can be confirmed. Referring to FIGS. 10A and 10B , it can be confirmed that the aluminum metal part and the titanium metal part each contain 2 at% or more of a fluorine component.
- the thickness of the oxide film layer formed on the surface of each metal part can be measured.
- the thickness of the oxide film layer can be captured as an SEM image and shown as FIGS. 11A and 11B.
- 11A and 11B are SEM images of a first oxide film layer and a second oxide film layer of an electronic device housing according to an embodiment.
- an SEM image of the aluminum metal part can be checked, and referring to FIG. 11B , a SEM image of the titanium metal part can be checked.
- 11a and 11b it can be confirmed that the pores formed in the oxide film layer of the aluminum metal part have a smaller diameter than the pores formed in the oxide film layer of the titanium metal part, and the thickness of the oxide film layer formed in the aluminum metal part is 1.5 ⁇ m, It can be confirmed that the thickness of the oxide film layer formed on the titanium metal part is 367 nm.
- Electronic devices may be devices of various types.
- the electronic device may include, for example, a portable communication device (eg, a smart phone), a computer device, a portable multimedia device, a portable medical device, a camera, a wearable device, or a home appliance.
- a portable communication device eg, a smart phone
- a computer device e.g., a smart phone
- a portable multimedia device e.g., a portable medical device
- a camera e.g., a portable medical device
- a camera e.g., a portable medical device
- a camera e.g., a camera
- a wearable device e.g., a smart bracelet
- first, second, or first or secondary may simply be used to distinguish that component from other corresponding components, and may refer to that component in other respects (eg, importance or order) is not limited.
- a (eg, first) component is said to be “coupled” or “connected” to another (eg, second) component, with or without the terms “functionally” or “communicatively.”
- the certain component may be connected to the other component directly (eg by wire), wirelessly, or through a third component.
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Abstract
Description
알루미늄 금속부 | 티타늄 금속부 | |
레진과의 접합력 [MPa] | 32.5 | 27.8 |
성분 [at%] | Ti | O | C | F | Al | Si |
티타늄 금속부 | 54.01 | 35.79 | 7.61 | 2.58 | - | - |
알루미늄 금속부 | - | 25.34 | 16.15 | 4.75 | 53.75 | 0.02 |
Claims (15)
- 제1 금속을 포함하는 제1 금속부;제2 금속을 포함하는 제2 금속부; 및비도전부;를 포함하고,상기 제1 금속부의 표면 중 적어도 일 부분에 제1 산화피막층이 형성되는 것이고,상기 제1 산화피막층은, 복수 개의 제1 포어를 포함하는 것으로서, 각각의 상기 복수 개의 제1 포어는 각각 제1 범위의 제1 직경을 가지는 것이고,상기 제2 금속부는, 상기 제1 금속부와 접하는 것이고,상기 제2 금속부의 표면 중 적어도 일 부분에 제2 산화피막층이 형성되는 것이고,상기 제2 산화피막층은, 복수 개의 제2 포어를 포함하는 것으로서, 각각의 상기 복수 개의 제2 포어는 각각 제2 범위의 제2 직경을 가지는 것이고,상기 비도전부는, 상기 제1 산화피막층 및 상기 제2 산화피막층의 접합부의 적어도 일 부분을 덮는 것인,전자 장치 하우징.
- 제1항에 있어서,상기 제1 금속 및 상기 제2 금속은, 상이한 것인,전자 장치 하우징.
- 제2항에 있어서,상기 제1 금속 및 상기 제2 금속은, 각각, Ti, Al, Mg, Zn, 스테인리스 스틸(SS), Cu, 액체금속 및 이들의 조합 중 적어도 하나를 포함하는 것인,전자 장치 하우징.
- 제1항에 있어서,상기 제1 범위는, 상기 제2 범위에 비해 작은 것인,전자 장치 하우징.
- 제1항에 있어서,상기 제1 산화피막층은, 제1 두께를 가지는 것이고,상기 제2 산화피막층은, 제2 두께를 가지는 것이고,상기 제1 두께 및 상기 제2 두께는, 각각, 100 ㎚ 이상인 것인,전자 장치 하우징.
- 제1항에 있어서,상기 제1 산화피막층 및 상기 제2 산화피막층은, 각각, 산소 원자 1 at% 이상 및 불소 원자 0.01 at% 이상을 포함하는 것인,전자 장치 하우징.
- 제1항에 있어서,상기 비도전부는, 상기 복수 개의 제1 포어, 상기 복수 개의 제2 포어 또는 이 둘을 채우는 것인,전자 장치 하우징.
- 제1항에 있어서,상기 비도전부는, 폴리부틸렌 테레프탈레이트(PBT, polybutylene terephthalate), 폴리카보네이트(PC, polycarbonate), 폴리페닐렌 설파이드(PPS, polyphenylene sulfide), 아크릴로나이트릴 부타디엔 스타이렌(ABS, acrylonitrile butadiene styrene), 폴리이미드(PI, polyimide), 폴리옥시메틸렌(POM, polyoxymethylene), 폴리에테르에테르케톤(PEEK, polyether ether ketone), 폴리아릴에테르케톤(PAEK, polyaryletherketone), 폴리페닐렌 옥사이드(PPO, polyphenylene oxide) 및 이들의 조합 중 적어도 하나를 포함하는 것인,전자 장치 하우징.
- 제8항에 있어서,상기 비도전부는, 유리 섬유, 탄소 섬유, 탈크, 울라스토나이트(wollatstonite) 및 이들의 조합 중 적어도 하나의 첨가제를 더 포함하는 것인,전자 장치 하우징.
- 제1항에 있어서,상기 제1 금속부 및 상기 제2 금속부 간의 접합력은, 10 MPa 내지 100 MPa인 것이고,상기 제1 금속부 및 상기 제2 금속부 각각과 상기 비도전부의 접합력은 25 MPa 이상인 것인,전자 장치 하우징
- 제1항에 있어서,상기 제1 산화피막층 및 상기 제2 산화피막층은, 각각, 불소 원자를 1 at% 이상 포함하는 것인,전자 장치 하우징.
- 제1항에 있어서,상기 제1 금속부, 상기 제2 금속부 또는 둘 다는, 표면 중 적어도 제2 부분에 코팅층에 형성되는 것인,전자 장치 하우징.
- 제12항에 있어서,상기 코팅층은, Be2SiO4, Zn2SiO4, ZrSiO4, (M1 2+)3(M2 3+)2(SiO4)3(M1은 Ca, Mg 및 Fe 중 적어도 하나, M2는 Al, Cr 및 Fe 중 적어도 하나), (메타)아크릴기를 가지는 다관능 (메타)아크릴레이트 폴리머, 6 내지 15개의 (메타)아크릴기를 가지는 다관능 우레탄(메타)아크릴레이트 올리고머, 2 내지 6개의 (메타)아크릴기를 가지는 다관능성 (메타)아크릴레이트 단량체, 불소화 (메타)아크릴레이트 단량체 및 이들의 조합 중 적어도 하나를 포함하는 것인,전자 장치 하우징.
- 전자 장치 하우징을 포함하는, 전자 장치로서,상기 전자 장치 하우징은,제1 금속을 포함하는 제1 금속부;제2 금속을 포함하는 제2 금속부; 및비도전부;를 포함하고,상기 제1 금속부는, 표면 중 적어도 일 부분에 제1 산화피막층이 형성되는 것이고,상기 제1 산화피막층은, 제1 직경을 가지는 복수 개의 제1 포어를 포함하는 것이고,상기 제2 금속부는, 상기 제1 금속부와 접하는 것이고,상기 제2 금속부는, 표면 중 적어도 일 부분에 제2 산화피막층이 형성되는 것이고,상기 제2 산화피막층은, 제2 직경을 가지는 복수 개의 제2 포어를 포함하는 것이고,상기 비도전부는, 상기 제1 산화피막층 및 상기 제2 산화피막층의 접합부의 적어도 일 부분을 덮는 것인,전자 장치.
- 표면에 복수 개의 제1 돌출부를 포함하는 제1 금속부; 및상기 제1 금속부와 상기 복수 개의 제1 돌출부의 인접한 제1 돌출부 간 공간의 표면에 비도전부;를 포함하고,상기 복수 개의 제1 돌출부는 제1 안테나 방사체를 형성하는 것인,전자 장치 하우징.
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CN202280040744.9A CN117426147A (zh) | 2021-06-09 | 2022-05-03 | 结合有不同的金属的电子设备壳体、及其制造方法 |
EP22820413.7A EP4333572A1 (en) | 2021-06-09 | 2022-05-03 | Electronic device housing joined with dissimilar metals, and manufacturing method therefor |
US17/847,871 US20220418135A1 (en) | 2021-06-09 | 2022-06-23 | Housing of electronic device with different bonded metals and method of manufacturing the same |
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KR10-2021-0074663 | 2021-06-09 | ||
KR1020210074663A KR20220165965A (ko) | 2021-06-09 | 2021-06-09 | 이종 금속 접합 전자 장치 하우징 및 이의 제조방법 |
Related Child Applications (1)
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US17/847,871 Continuation US20220418135A1 (en) | 2021-06-09 | 2022-06-23 | Housing of electronic device with different bonded metals and method of manufacturing the same |
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US (1) | US20220418135A1 (ko) |
EP (1) | EP4333572A1 (ko) |
KR (1) | KR20220165965A (ko) |
CN (1) | CN117426147A (ko) |
WO (1) | WO2022260285A1 (ko) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101399835B1 (ko) * | 2013-07-09 | 2014-05-27 | 박상인 | 무선통신기기 케이스의 제조방법 및 이 방법에 의해 제조된 무선통신기기 케이스 |
KR20150017742A (ko) * | 2012-05-29 | 2015-02-17 | 애플 인크. | 양극산화 공정 |
KR20190030121A (ko) * | 2017-09-13 | 2019-03-21 | 삼성전자주식회사 | 이종 금속 부재 및 그 제조방법 |
KR20200094950A (ko) * | 2019-01-31 | 2020-08-10 | 삼성전자주식회사 | 금속 물질을 포함하는 하우징을 포함하는 전자 장치 |
KR102205058B1 (ko) * | 2019-03-22 | 2021-01-20 | 지오네이션 주식회사 | 이종 접합형 수지 금속 복합재의 제조방법 |
-
2021
- 2021-06-09 KR KR1020210074663A patent/KR20220165965A/ko unknown
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2022
- 2022-05-03 WO PCT/KR2022/006327 patent/WO2022260285A1/ko active Application Filing
- 2022-05-03 CN CN202280040744.9A patent/CN117426147A/zh active Pending
- 2022-05-03 EP EP22820413.7A patent/EP4333572A1/en active Pending
- 2022-06-23 US US17/847,871 patent/US20220418135A1/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150017742A (ko) * | 2012-05-29 | 2015-02-17 | 애플 인크. | 양극산화 공정 |
KR101399835B1 (ko) * | 2013-07-09 | 2014-05-27 | 박상인 | 무선통신기기 케이스의 제조방법 및 이 방법에 의해 제조된 무선통신기기 케이스 |
KR20190030121A (ko) * | 2017-09-13 | 2019-03-21 | 삼성전자주식회사 | 이종 금속 부재 및 그 제조방법 |
KR20200094950A (ko) * | 2019-01-31 | 2020-08-10 | 삼성전자주식회사 | 금속 물질을 포함하는 하우징을 포함하는 전자 장치 |
KR102205058B1 (ko) * | 2019-03-22 | 2021-01-20 | 지오네이션 주식회사 | 이종 접합형 수지 금속 복합재의 제조방법 |
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CN117426147A (zh) | 2024-01-19 |
KR20220165965A (ko) | 2022-12-16 |
EP4333572A1 (en) | 2024-03-06 |
US20220418135A1 (en) | 2022-12-29 |
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