WO2022257923A1 - 一种基于双层光刻胶的光刻方法 - Google Patents
一种基于双层光刻胶的光刻方法 Download PDFInfo
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- WO2022257923A1 WO2022257923A1 PCT/CN2022/097391 CN2022097391W WO2022257923A1 WO 2022257923 A1 WO2022257923 A1 WO 2022257923A1 CN 2022097391 W CN2022097391 W CN 2022097391W WO 2022257923 A1 WO2022257923 A1 WO 2022257923A1
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Images
Classifications
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Definitions
- the invention relates to the technical field of semiconductor microstructure processing, in particular to a photolithography method based on a double-layer photoresist.
- Photolithography is a precise microfabrication technique.
- Conventional photolithography technology uses a wavelength of The ultraviolet light is used as the image information carrier, and the photoresist is used as the intermediate or image recording medium to realize the transformation, transfer and processing of the graphics, and finally transfer the image information to the wafer, mainly referring to a silicon wafer or a layer on the dielectric layer. kind of craft.
- photolithography refers to the technology of transferring the pattern on the mask plate to the substrate by means of photoresist (also known as photoresist) under the action of light.
- the main process is as follows: first, ultraviolet light is irradiated on the surface of the substrate with a layer of photoresist film through the mask plate, causing the photoresist in the exposed area to undergo a chemical reaction; then the exposed area or the unexposed area is dissolved and removed by developing technology The photoresist, so that the pattern on the mask plate is copied to the photoresist film; finally, the pattern is transferred to the substrate by etching technology.
- the photoresist can be mainly divided into a positive photoresist and a negative photoresist.
- the positive photoresist has the following characteristics: the exposed part will undergo photochemical reaction and dissolve in the developer, while the unexposed part is insoluble in the developer.
- the negative photoresist has the following characteristics: its exposed part will be insoluble in the developer due to crosslinking and curing or photochemical reaction, while the unexposed part will be soluble in the developer.
- Photolithography is the most important processing technology for integrated circuits, and its function is like that of a lathe in a metalworking workshop. In the entire chip manufacturing process, the implementation of almost every process is inseparable from lithography technology. Lithography is also the most critical technology for making chips, accounting for more than 35% of chip manufacturing costs.
- Lithography technology is mainly divided into optical lithography according to the exposure source.
- Common light sources include ultraviolet light source (UV), deep ultraviolet light source (DUV), extreme ultraviolet light source (EUV), and particle beam lithography.
- UV ultraviolet light source
- DUV deep ultraviolet light source
- EUV extreme ultraviolet light source
- particle beam lithography mainly There are X-ray, electron beam and ion beam lithography, etc.
- UV energy can only achieve a pattern resolution of around one micron.
- DUV and EUV can achieve higher resolution, they need to use expensive machines that only industry giants can afford.
- electron beam lithography and focused ion beam lithography can also improve the resolution to a certain extent, they require a long time-consuming and multiple-cycle writing process, which greatly reduces work efficiency.
- the purpose of the present invention is to provide a simple method, smaller line width than the traditional technology, widely used in semiconductor technology, and has extensive research and application value based on double-layer optical Resist photolithography method.
- the original pattern is obtained.
- the contour line pattern of the feature can achieve the contour line width smaller than the original pattern feature line width and double the line density. After that, the pattern can be further transferred to the target material by combining the etching process for the base material or deposition material.
- the specific scheme is as follows :
- a photolithography method based on double-layer photoresist comprises the following steps:
- the template pattern is converted into an outline pattern
- the outline pattern is transferred to the base material.
- the base material includes semiconductor, metal, insulator, polymer or composite material.
- semiconductor metal, insulator, polymer or composite material.
- a silicon wafer or a silicon wafer with a layer of silicon oxide film attached to the surface For example, a silicon wafer or a silicon wafer with a layer of silicon oxide film attached to the surface.
- the method of transferring the outline pattern after double-layer photolithography to the deposition material on the silicon wafer substrate specifically includes the following steps:
- Exposure tightly fix the silicon wafer base that has gone through the above steps on the exposure table, place it under the exposure source, turn on the light source, and perform exposure operation through the mask plate or the exposure source focusing device, according to the photoresist pairing group Adjust the exposure time or exposure dose according to the type of photoresist layer and the thickness of the photoresist layer; after the exposure, move the exposed silicon wafer to the heating table for drying;
- the silicon wafer After the post-baking is over, after the silicon wafer is cooled to room temperature, develop separately.
- the process is: place the photoetched silicon wafer in a negative photoresist developer to make the unexposed negative photoresist on the silicon wafer Afterwards, take out the silicon wafer and clean it with deionized water, and blow it dry with nitrogen; (Note: If the positive and negative offset developers are the same, the deionized water cleaning step can be omitted)
- Material deposition place the developed silicon wafer in an evaporation coating apparatus, thermally evaporate a 5-nanometer titanium film and a 50-nanometer gold film respectively, and use a 5-nanometer titanium film as a gold film the adhesive layer.
- Removing the photoresist After the cavity is cooled, release the vacuum, and take out the coated silicon wafer. The silicon wafer is immersed in acetone and ultrasonically cleaned until the photoresist is completely removed, leaving a metal outline pattern.
- the silicon oxide outline pattern is prepared on the surface of a silicon wafer with a thick silicon oxide film grown on the surface, specifically comprising the following steps:
- Exposure tightly fix the silicon wafer base that has gone through the above steps on the exposure table, place it under the exposure source, turn on the light source, and perform exposure operation through the mask plate or the exposure source focusing device, according to the photoresist pairing group Adjust the exposure time or exposure dose according to the type of photoresist layer and the thickness of the photoresist layer; after the exposure, move the exposed silicon wafer to the heating table for drying;
- the silicon wafer After the post-baking is over, after the silicon wafer is cooled to room temperature, develop separately.
- the process is: place the photoetched silicon wafer in a negative photoresist developer to make the unexposed negative photoresist on the silicon wafer Afterwards, the silicon wafer is taken out and cleaned with deionized water, and dried with nitrogen; (Note: If the positive and negative offset developers are the same, the steps of cleaning with deionized water and drying with nitrogen can be omitted)
- Dry etching place the silicon wafer in an ion etching machine, etch the silicon dioxide mask layer through plasma gas, and remove the silicon dioxide deposited in advance at the square outline pattern layer, exposing the underlying silicon base.
- the spin-coating process includes spin-coating at a rotational speed of 500-8000 rpm; the drying temperature after spin-coating is 30°C-300°C.
- the spin-coating process includes spin-coating at a rotational speed of 2000-8000 rpm for 30-40 s; after the spin-coating, the drying temperature is 90-100° C. and the drying time is 30-90 s.
- the exposure adopts a single exposure method.
- the exposure may also adopt the manner of multiple exposures. That is, it can also be decomposed into multiple exposures with shorter times or smaller doses.
- the exposure source may be ultraviolet light source, deep ultraviolet light source, extreme ultraviolet light source, ion beam, electron beam or X-ray.
- the wavelength of the exposure source is 1-500nm
- the drying temperature after exposure is 30-300°C.
- the wavelength of the exposure source is 350-400nm, and the drying temperature after exposure is 95-105°C.
- the positive photoresist includes positive ultraviolet photoresist, positive deep ultraviolet photoresist, positive extreme ultraviolet photoresist, positive electron beam photoresist, positive ion beam photoresist Or positive X-ray photoresist, including MICROPOSIT S1800 series photoresist, BCI-3511 photoresist, AZ series photoresist (such as AZ111, AZ 1500, AZ 3300, AZ 4999, AZ 6600, AZ 8112, AZ 3000 , AZ 1075, AZ 700, AZ 900), HNR 500 series photoresist, OiR series photoresist, TDMR-AR80 HP 6CP, PR1 series photoresist, ma-P 1200 series photoresist, SPR series photoresist (such as SPR 220, SPR 660, SPR3000, etc.), PMMA series photoresists, etc.
- the negative photoresist includes negative ultraviolet photoresist, negative deep ultraviolet photoresist, negative developing deep ultraviolet photoresist, negative extreme ultraviolet photoresist, negative electron beam photoresist, negative photoresist Positive ion beam photoresist or positive X-ray photoresist, including but not limited to NANO TM SU-8Series series, HSQ, AZ series photoresist (such as AZ N4000, AZ N6000), HNR series photoresist, SC series Photoresist, ma-N series photoresist (eg ma-N 400, ma-N 1400), 2000 Series, 5500 Photoresis, NR7-PY Series, NR9-PY Series, JSR WPR Series, NR71 Series NR9Series, etc.
- NANO TM SU-8Series series HSQ
- AZ series photoresist such as AZ N4000, AZ N6000
- HNR series photoresist SC series Photoresist
- the photoresist developer is generally a developer corresponding to the photoresist used.
- the positive photoresist developer can be TMAH 2.38%, MF-26A, and the negative photoresist developer can be TMAH 2.38%, SU-8 developer, etc.
- the characteristic line width or characteristic size of the template pattern is 2nm-1000 ⁇ m.
- the characteristic line width or characteristic size of the template pattern is 2 nm-1 ⁇ m.
- the material deposition techniques include but are not limited to electrochemical deposition, electroplating, CVD deposition, laser sputtering, magnetron sputtering, thermal evaporation, electron beam evaporation or atomic deposition;
- the etching technique includes wet etching or dry etching; the wet etching includes electrochemical etching or selective etching liquid etching, and the dry etching includes ion etching Or chemical reactive ion etching.
- the two layers of photoresist are exposed through the photolithography mask carrying the template pattern under the exposure source by means of projection exposure.
- the two layers of photoresist are exposed through the photolithography mask carrying the template pattern under the exposure source by means of masking exposure.
- the two layers of photoresist are exposed by means of reflective exposure under the exposure source by reflecting on the photolithographic mask carrying the template pattern.
- the focused direct writing includes and is not limited to ultraviolet direct writing, deep ultraviolet direct writing, extreme ultraviolet direct writing, ion beam direct writing, electron beam direct writing or X-ray direct writing.
- the base material includes semiconductor, metal, insulator, polymer or composite material.
- the present invention also provides a photolithography system, including a spin coating unit, a drying unit, an exposure unit, a development unit, a deposition etching unit, and a photoresist removal unit, and the photolithography system is used to perform the following steps:
- the present invention also provides a photolithography system control method, which is used to control the above-mentioned photolithography system to execute various steps.
- the present invention also provides a computer device, including: a memory, a processor, and a computer program stored on the memory and operable on the processor, wherein, when the processor executes the computer program, the The above-mentioned photolithography system control method.
- the present invention also provides a computer-readable medium on which a computer program is stored, and when the computer program is executed by a processor, the above method for controlling a photolithography system is realized.
- the present invention has the following advantages:
- the present invention continues the characteristics of high efficiency, low cost and simple operation of traditional photolithography, and makes up for the limitations of traditional photolithography in the preparation of submicron resolution patterns;
- the present invention realizes the miniaturization of the original mask pattern.
- Fig. 1 is the schematic flow sheet in embodiment 1;
- Fig. 2 is the schematic flow sheet in embodiment 2;
- FIG. 3 is a pattern of gold nanowires prepared in Example 1.
- the invention provides a kind of photolithography method based on double-layer photoresist, and this method comprises the following steps:
- Positive-working photoresists include positive-working UV photoresists, positive-working deep-UV photoresists, positive-working extreme ultraviolet photoresists, positive-working e-beam photoresists, positive-working ion beam photoresists, or positive-working X-ray photoresists Engraving.
- Negative-tone photoresists include negative-tone UV photoresists, negative-tone deep-UV photoresists, negative-tone extreme ultraviolet photoresists, negative-tone e-beam photoresists, negative-tone ion beam photoresists, or positive X-ray photoresists Engraving.
- Two positive and negative photoresist pairing groups are given below: the first group, the positive photoresist model is SPR 660, and the negative photoresist model is SU-8 2; the second group, the positive photoresist model is AZ 1500, and the negative photoresist model is AZ nlof 2020;
- the process of spin-coating positive photoresist (take SPR 660, AZ 1500 as an example) is: first spin-coat at 800-1000 rpm for 5-10 seconds (this step can be omitted), and then at 2000-5000 Spin coating for 30-40 seconds at a speed of rpm, and bake for 30-50 seconds at 90-100°C.
- the process of spin-coating negative photoresist (taking SU-8 2, AZ nlof 2020 as an example) is: first spin-coat at a speed of 800-1000 rpm for 5-10 seconds (this step can be omitted), and then Spin coating at 4000-8000 rpm for 30-40 seconds, and bake at 95-100°C for 60-90 seconds. Different rotational speeds determine the thickness of the photoresist film. According to different film thicknesses, adjust the temperature and time of pre-baking, as well as the subsequent exposure amount, exposure time, development time, etc.
- the base material includes semiconductor, metal, insulator, polymer or composite material.
- the exposure source uses a photolithographic mask plate carrying a template pattern or by focusing direct writing to perform a single exposure to the two layers of photoresist.
- the negative photoresist and the positive photoresist Exposure patterns of different sizes are formed on the surface, and then dried; wherein, the exposure sources include ultraviolet light sources, deep ultraviolet light sources, extreme ultraviolet light sources, ion beams, electron beams or X-rays.
- Focused direct writing includes ultraviolet direct writing, deep ultraviolet direct writing, extreme ultraviolet direct writing, ion beam direct writing, electron beam direct writing or X-ray direct writing.
- the characteristic line width or characteristic size of the template pattern is 2 nm-1000 ⁇ m.
- the pre-baked silicon wafer is fixed under the mask, and then placed under the ultraviolet light source, and the ultraviolet light source is turned on for photolithography.
- the exposure time is adjusted according to the positive and negative photoresist pairing group used. Taking the pairing mentioned above as an example, the exposure flux of 100-200mJ/ cm2 at 350-400nm wavelength is suitable for the photoresist pairing group of SPR 660 and SU-8 2, AZ 1500 and AZ nlof 2020.
- the use of UV wavelength and exposure flux should take into account the absorption of UV light by negative photoresists (such as SU-8 2, AZ nlof 2020) of different thicknesses to ensure that the underlying positive photoresist (such as SPR 660 , AZ 1500) can obtain sufficient exposure flux. Because the photoresist pairs of SPR 660 and SU-8 2, AZ 1500 and AZ nlof 2020 respond differently to the exposure flux at a specific wavelength, patterns of different sizes based on the mask pattern can be obtained.
- the silicon wafer was taken out and washed with water, and dried with a nitrogen stream;
- the exposed positive photoresist is washed away, while the unexposed negative photoresist under the exposed negative photoresist is not completely removed; then the silicon wafer is taken out and washed with water, and blown dry with nitrogen flow .
- a hollow line pattern based on the template pattern is prepared.
- the material deposition technology includes electrochemical deposition, electroplating, CVD deposition, laser sputtering, magnetron sputtering, thermal evaporation, E-beam evaporation or atomic deposition.
- the etching technique includes wet etching or dry etching; the wet etching includes electrochemical etching or selective etching liquid etching, and the dry etching includes ion etching or chemical reaction ion etching etch.
- the present invention also provides a photolithography system, including a spin coating part, a drying part, an exposure part, a development part, a deposition etching part, and a photoresist removal part, and the photolithography system is used to implement the above-mentioned double-layer photolithography based on Resist photolithography method. Specifically, it can be used to perform the following steps:
- the present invention also provides a photolithography system control method, which is used to control the above-mentioned photolithography system to execute various steps.
- the present invention also provides a computer device, including: a memory, a processor, and a computer program stored on the memory and operable on the processor, wherein, when the processor executes the computer program, the The above-mentioned photolithography system control method.
- the present invention also provides a computer-readable medium on which a computer program is stored, and when the computer program is executed by a processor, the above method for controlling a photolithography system is realized.
- the silicon substrate is blown dry with nitrogen, placed in a dry etcher, and cleaned by oxygen plasma etching for 1-2 minutes.
- the silicon substrate that has passed the above steps is tightly fixed under the mask plate of the 5 micron line array, vacuumed and placed under the ultraviolet light source, and the light source is turned on for photolithography operation. Adjust the exposure time according to the type of photoresist paired group and the thickness of the photoresist layer. After the exposure is over, the mask plate is removed, and the exposed silicon wafer is moved to a heating table, and baked at 100° C. for 45 seconds. Wherein, the exposure flux is, for example, 100 mJ/cm 2 , which can be changed according to requirements.
- the silicon wafer After the post-baking is over, after the silicon wafer is cooled to room temperature, develop separately.
- the process is as follows: put the silicon wafer after photolithography in the corresponding negative photoresist developer SU-8 developer or TMAH-2.38%, so that the silicon The unexposed negative photoresist on the chip is washed away; then the silicon wafer is taken out and cleaned with deionized water, and blown dry with nitrogen flow; steps can be omitted)
- the scanning electron micrograph of the metal nanowire obtained by this method has a characteristic line width of less than 200nm.
- the silicon wafer substrate that has gone through the above steps is tightly fixed under the 5 micron square pattern mask, vacuumed and placed under the ultraviolet light source, and the light source is turned on for photolithography operation. Adjust the exposure time according to the type of photoresist paired group and the thickness of the photoresist layer. After the exposure is over, the mask plate is removed, and the exposed silicon wafer is moved to a heating table, and baked at 100° C. for 45 seconds. Wherein, the exposure flux is, for example, 100 mJ/cm 2 , and the exposure flux can be changed according to requirements.
- the silicon wafer After the post-baking is over, after the silicon wafer is cooled to room temperature, develop separately.
- the process is as follows: put the silicon wafer after photolithography in the negative photoresist developer SU-8 developer or TMAH-2.38%, and make the silicon wafer The unexposed negative photoresist is washed away; then the silicon wafer is taken out and cleaned with deionized water, and dried with nitrogen flow; (note: if the positive and negative photoresists are the same, the deionized water cleaning and nitrogen blowing steps can be omitted)
- Silica square outlines were prepared by immersing the silicon wafer in acetone and cleaning it ultrasonically until the photoresist was completely removed.
- the exposure method in which the silicon wafer substrate is tightly fixed under the mask and vacuumed and placed under the ultraviolet light source is used, but the present invention is not limited thereto.
- the positive and negative double-layer photoresist lithography technology of the present invention can also use projection exposure.
- Embodiment 3 the main steps of the positive and negative double-layer photoresist lithography technology of the present invention will be described by taking a projection ultraviolet lithography system with a wavelength of ultraviolet light less than 400 nm as an example.
- the silicon wafer substrate that has gone through the above steps is tightly fixed on the sample stage of the projection lithography machine, and the projection ultraviolet exposure operation is performed through the photolithography mask. Adjust the exposure time according to the type of photoresist paired group and the thickness of the photoresist layer. After the exposure, the exposed silicon wafer was moved to a heating table, and baked at 110° C. for 90 seconds. Wherein, the exposure flux is, for example, 100 mJ/cm 2 , which can be changed according to requirements.
- the silicon wafer After the post-baking is over, after the silicon wafer is cooled to room temperature, develop separately.
- the process is as follows: the silicon wafer after photolithography is placed in a negative offset developer (TMAH-2.38%) to make the unexposed negative on the silicon wafer The photoresist is washed away;
- TMAH-2.38% a positive photoresist developer
- Embodiments 1 and 2 the exposure method of tightly fixing the silicon wafer substrate under the mask and vacuuming it and placing it under the ultraviolet light source is used.
- Embodiment 3 projection exposure is used.
- the present invention is not limited thereto.
- the positive and negative double-layer photoresist lithography technology of the present invention can also use electron beam direct writing exposure.
- Embodiment 4 the main steps of the positive and negative double-layer photoresist lithography technology of the present invention using electron beam direct writing exposure will be described.
- Negative electron beam photoresist HSQ is drop-coated, photoresist is spin-coated, and pre-baked.
- the exposed silicon wafer is moved to a heating table for post-baking.
- the exposure flux is, for example, 500 ⁇ C/cm 2 , which can be changed according to requirements.
- TMAH developer electron beam negative film developer
- Silicon wafer is then placed in positive electron beam photoresist developing solution (MIBK:IPA developing solution), partly removes the unexposed positive photoresist PMMA below the negative photoresist that has been exposed;
- MIBK positive electron beam photoresist developing solution
- the wafers were taken out, rinsed with water, and dried with a stream of nitrogen.
- An outline pattern based on the template pattern is prepared.
- Embodiments 1 and 2 the exposure method of tightly fixing the silicon wafer substrate under the mask and vacuuming it and placing it under the ultraviolet light source is used.
- Embodiment 3 projection exposure is used.
- Example 4 the way of electron beam direct writing exposure was used.
- the present invention is not limited thereto.
- the positive and negative double-layer photoresist lithography technology of the present invention can also use the way of ultraviolet direct writing exposure.
- Embodiment 5 the main steps of the positive and negative double-layer photoresist photolithography technology of the present invention using ultraviolet direct writing exposure will be described.
- a spin coater Place the cleaned silicon wafer in a spin coater and fix it in vacuum.
- a dropper to drop-coat a positive photoresist (such as AZ 1500), spin-coat the photoresist under the conditions of 500rpm ⁇ 5s+4000rpm ⁇ 40s, and bake at 100°C for 10 seconds.
- a positive photoresist such as AZ 1500
- the silicon wafer substrate that has gone through the above steps is tightly fixed under the exposure source, and the ultraviolet direct writing system is turned on for direct writing exposure operation. Adjust the exposure time according to the type of photoresist paired group and the thickness of the photoresist layer. After the exposure is over, the mask plate is removed, and the exposed silicon wafer is moved to a heating table, and baked at 110° C. for 60 seconds. Wherein, the exposure flux is, for example, 100 mJ/cm 2 , which can be changed according to requirements.
- the silicon wafer After the post-baking is over, after the silicon wafer is cooled to room temperature, develop separately.
- the process is as follows: the silicon wafer after photolithography is placed in a negative offset developer (TMAH-2.38%) to make the unexposed negative on the silicon wafer The photoresist is washed away;
- TMAH-2.38% a positive photoresist developer
- the photolithography method based on the double-layer photoresist of the present invention can be widely used in semiconductor technology, chip manufacturing and other fields, and has extensive research and application value.
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Abstract
Description
Claims (20)
- 一种基于双层光刻胶的光刻方法,其特征在于,该方法包括以下步骤:(1)在基底上旋涂一层正性光刻胶,并烘干;再在正性光刻胶上旋涂一层与正性光刻胶相匹配的负性光刻胶,并烘干;(2)在曝光源下,使用载有模板图案的光刻掩膜版或者通过聚焦直写,对两层光刻胶进行曝光,从而在负性光刻胶和正性光刻胶上分别形成大小不同的曝光图案,然后进行烘干;(3)用负胶显影液对负性光刻胶进行显影;(4)用正胶显影液对正性光刻胶进行可控显影,仅洗去正性光刻胶上曝光图案的边缘部分,并暴露基底材料;(5)通过材料沉积技术或者刻蚀技术,在基底材料上形成图案;(6)去除光刻胶。
- 根据权利要求1所述的基于双层光刻胶的光刻方法,其特征在于,通过执行步骤(4),从而将模板图案转换成轮廓线型图案,通过执行步骤(5),从而将轮廓线型图案转移到基底材料上。
- 根据权利要求1所述的基于双层光刻胶的光刻方法,其特征在于,所述旋涂的过程包括在500~8000rpm的转速下旋涂,旋涂后烘干的温度为30~300℃。
- 根据权利要求1所述的基于双层光刻胶的光刻方法,其特征在于,所述曝光采用单次曝光的方式。
- 根据权利要求1所述的基于双层光刻胶的光刻方法,其特征在于,所述曝光采用多次曝光的方式。
- 根据权利要求1所述的基于双层光刻胶的光刻方法,其特征在于,所述曝光源包括紫外光源、深紫外光源、极紫外光源、离子束、电子束或X射线。
- 根据权利要求1或6所述的基于双层光刻胶的光刻方法,其特征在 于,所述曝光源的波长为1~500nm,曝光后烘干的温度为30~300℃。
- 根据权利要求1所述的基于双层光刻胶的光刻方法,其特征在于,所述正性光刻胶包括正性紫外光刻胶、正性深紫外光刻胶、正性极紫外光刻胶、正性电子束光刻胶、正性离子束光刻胶或正性X射线光刻胶;所述负性光刻胶包括负性紫外光刻胶、负性深紫外光刻胶、负显影深紫外光刻胶、负性极紫外光刻胶、负性电子束光刻胶、负性离子束光刻胶或正性X射线光刻胶。
- 根据权利要求1所述的基于双层光刻胶的光刻方法,其特征在于,所述显影液为所用光刻胶所对应的显影液。
- 根据权利要求1所述的基于双层光刻胶的光刻方法,其特征在于,所述模板图案的特征线宽或者特征尺寸为2nm~1000μm。
- 根据权利要求1所述的基于双层光刻胶的光刻方法,其特征在于,所述材料沉积技术包括且不限于电化学沉积、电镀、CVD沉积、激光溅射、磁控溅射、热蒸发、电子束蒸发或原子沉积;所述刻蚀技术包括湿法刻蚀或干法刻蚀,所述湿法刻蚀包括电化学刻蚀或选择性刻蚀液体刻蚀,所述干法刻蚀包括离子刻蚀或化学反应离子刻蚀。
- 根据权利要求1所述的基于双层光刻胶的光刻方法,其特征在于,在步骤(2)中,利用投影式曝光的方式,在曝光源下,透过载有模板图案的光刻掩膜版,对两层光刻胶进行曝光。
- 根据权利要求1所述的基于双层光刻胶的光刻方法,其特征在于,在步骤(2)中,利用遮蔽式曝光的方式,在曝光源下,透过载有模板图案的光刻掩膜版,对两层光刻胶进行曝光。
- 根据权利要求1所述的基于双层光刻胶的光刻方法,其特征在于,在步骤(2)中,利用反射式曝光的方式,在曝光源下,通过在载有模板图案的光刻掩膜版上进行反射,对两层光刻胶进行曝光。
- 根据权利要求1所述的基于双层光刻胶的光刻方法,其特征在于,所述聚焦直写包括且不限于紫外光直写、深紫外光直写、极紫外光直写、离子束直写、电子束直写或X射线直写。
- 根据权利要求1所述的基于双层光刻胶的光刻方法,其特征在于,所述基底材料包括半导体、金属、绝缘体、聚合物或复合材料。
- 一种光刻系统,包括旋涂部、烘干部、曝光部、显影部、沉积刻蚀部、以及光刻胶去除部,所述光刻系统用于执行以下步骤:(1)利用旋涂部在基底上旋涂一层正性光刻胶,并利用烘干部进行烘干;再利用旋涂部在正性光刻胶上旋涂一层与正性光刻胶相匹配的负性光刻胶,并利用烘干部进行烘干;(2)利用曝光部在曝光源下,使用载有模板图案的光刻掩膜版或者通过聚焦直写,对两层光刻胶进行曝光,从而在负性光刻胶和正性光刻胶上分别形成大小不同的曝光图案,然后利用烘干部进行烘干;(3)利用显影部用负胶显影液对负性光刻胶进行显影;(4)利用显影部用正胶显影液对正性光刻胶进行可控显影,仅洗去正性光刻胶上曝光图案的边缘部分,并暴露基底材料;(5)利用沉积刻蚀部通过材料沉积技术或者刻蚀技术,在基底材料上形成图案;(6)利用光刻胶去除部去除光刻胶。
- 一种光刻系统控制方法,用于控制权利要求17所述的光刻系统执行各个步骤。
- 一种计算机设备,包括:存储器、处理器及存储在所述存储器上并可在所述处理器上运行的计算机程序,其特征在于,所述处理器执行所述计算机程序时实现权利要求18所述的光刻系统控制方法。
- 一种计算机可读取介质,其上存储有计算机程序,该计算机程序被处理器执行时实现权利要求18所述的光刻系统控制方法。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115793414A (zh) * | 2022-12-26 | 2023-03-14 | 有研国晶辉新材料有限公司 | 一种可调控高度比例的高深宽比微结构的制备方法 |
CN116449655A (zh) * | 2023-04-19 | 2023-07-18 | 深圳品微光学科技有限公司 | 一种纳米级硬质掩模的制备方法 |
CN116449655B (zh) * | 2023-04-19 | 2024-05-31 | 深圳品微光学科技有限公司 | 一种纳米级硬质掩模的制备方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN116054770B (zh) * | 2023-03-30 | 2023-07-04 | 北京中科飞鸿科技股份有限公司 | 剥离工艺制备叉指电极的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61294815A (ja) * | 1985-06-21 | 1986-12-25 | Toshiba Corp | 半導体装置の製造方法 |
CN101969098A (zh) * | 2010-08-11 | 2011-02-09 | 上海腾怡半导体有限公司 | 一种磁阻传感器的制造方法 |
CN104199252A (zh) * | 2014-09-10 | 2014-12-10 | 中国科学院高能物理研究所 | 一种实现光刻胶微结构的方法 |
CN105116685A (zh) * | 2015-09-24 | 2015-12-02 | 京东方科技集团股份有限公司 | 一种光刻胶图案的制作方法、彩色滤光片及显示装置 |
CN110989295A (zh) * | 2019-11-18 | 2020-04-10 | 中国科学院上海光学精密机械研究所 | 一种激光热模光刻图像反转胶及其光刻方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010025198A1 (en) * | 2008-08-26 | 2010-03-04 | Tokyo Electron Limited | Method of patterning a substrate using dual tone development |
-
2021
- 2021-06-11 CN CN202110653553.7A patent/CN115469511A/zh active Pending
-
2022
- 2022-06-07 KR KR1020237041058A patent/KR20240003445A/ko unknown
- 2022-06-07 EP EP22819521.0A patent/EP4354223A1/en active Pending
- 2022-06-07 WO PCT/CN2022/097391 patent/WO2022257923A1/zh active Application Filing
- 2022-06-10 TW TW111121609A patent/TWI803344B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61294815A (ja) * | 1985-06-21 | 1986-12-25 | Toshiba Corp | 半導体装置の製造方法 |
CN101969098A (zh) * | 2010-08-11 | 2011-02-09 | 上海腾怡半导体有限公司 | 一种磁阻传感器的制造方法 |
CN104199252A (zh) * | 2014-09-10 | 2014-12-10 | 中国科学院高能物理研究所 | 一种实现光刻胶微结构的方法 |
CN105116685A (zh) * | 2015-09-24 | 2015-12-02 | 京东方科技集团股份有限公司 | 一种光刻胶图案的制作方法、彩色滤光片及显示装置 |
CN110989295A (zh) * | 2019-11-18 | 2020-04-10 | 中国科学院上海光学精密机械研究所 | 一种激光热模光刻图像反转胶及其光刻方法 |
Non-Patent Citations (2)
Title |
---|
GUO JING, WU PING: "Introduction of Developing Mechanism of Positive and Negative Photoresist Developing Liquid", DIANZI SHIJIE - ELECTRONICS WORLD, DIANZI SHIJIE ZAZHISHE, CN, no. 19, 15 October 2020 (2020-10-15), CN , pages 150 - 151, XP093012520, ISSN: 1003-0522, DOI: 10.19353/j.cnki.dzsj.2020.19.070 * |
LAI WUXING ͨ¹Ý¸Ä±Ä¹Â¿Ì½º²ÄÁÏΜÄÐÔÖÊ£¬, SHU-ZI: "Comparison of Characteristics of Photoresists in Photoithography Process on Micromachining ", SEMICONDUCTOR TECHNOLOGY, GAI-KAN BIANJIBU, SHIJIAZHUANG, CN, vol. 29, no. 11, 23 November 2004 (2004-11-23), CN , pages 22 - 25, XP093012599, ISSN: 1003-353X, DOI: 10.13290/j.cnki.bdtjs.2004.11.007 * |
Cited By (3)
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