WO2022257092A1 - 集成器件、半导体器件以及集成器件的制作方法 - Google Patents
集成器件、半导体器件以及集成器件的制作方法 Download PDFInfo
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- WO2022257092A1 WO2022257092A1 PCT/CN2021/099575 CN2021099575W WO2022257092A1 WO 2022257092 A1 WO2022257092 A1 WO 2022257092A1 CN 2021099575 W CN2021099575 W CN 2021099575W WO 2022257092 A1 WO2022257092 A1 WO 2022257092A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 412
- 239000002184 metal Substances 0.000 claims abstract description 412
- 239000003990 capacitor Substances 0.000 claims abstract description 186
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- 229910002601 GaN Inorganic materials 0.000 claims description 205
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 113
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 108
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 87
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 32
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
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- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 description 2
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Images
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
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- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Definitions
- the present application relates to a microelectronic technology, in particular to an integrated device, a semiconductor device and a manufacturing method of the integrated device.
- Gallium nitride (GaN) power devices have great potential in the field of power conversion due to their small on-resistance and fast turn-on speed.
- the peak voltage (10V) that the gate of this device can withstand is smaller than that of traditional silicon devices, and the threshold voltage is relatively small (between 1.0 and 2.5V)
- the gate drive waveform is prone to oscillation, which may cause overvoltage damage to the gate of the device or false turn-on of the device.
- the gate drive circuit can be monolithically integrated with a single transistor on the GaN device platform.
- capacitor plates such as field plate layers, gate metal layers
- the integration of capacitors is limited by the chip area.
- Embodiments of the present application provide an integrated device, a semiconductor device, and a manufacturing method of the integrated device, which are used to increase the capacitance integration density of the integrated device.
- the first aspect of the present application provides an integrated device, comprising: a first metal layer; a first dielectric layer disposed on the first metal layer; a second dielectric layer disposed on the first dielectric layer; A gate metal layer between a dielectric layer and a second dielectric layer; and, a second metal layer disposed on the second dielectric layer; wherein, the first metal layer, the first dielectric layer and the gate metal layer are used for Constitute the first capacitor; the second metal layer, the second dielectric layer and the gate metal layer are used to constitute the second capacitor; the first metal layer and the second metal layer are connected through the first conductor structure, so that the first capacitor and the second The capacitors are connected in parallel.
- the gate metal layer, the first dielectric layer and the first metal layer constitute the first capacitor
- the gate metal layer, the second dielectric layer and the second metal layer constitute the second capacitor, that is, in an integrated device
- Two capacitors are formed at the same time, and the first metal layer and the second metal layer are connected through the first conductor structure, so that the first capacitor and the second capacitor are connected in parallel, so that the capacitance capacity in the integrated device is increased, that is, the capacitance of the integrated device is increased. Integration density.
- the polarity of the gate metal layer is opposite to that of the first metal layer, and the polarity of the second metal layer is opposite to that of the gate metal layer.
- the integrated device further includes a third metal layer, a P-type conductive layer arranged under the first metal layer; an aluminum gallium nitride layer arranged under the P-type conductive layer; an aluminum gallium nitride layer Two-dimensional electron gas is included under the layer; the first metal layer, P-type conductive layer and two-dimensional electron gas are used to form the third capacitor; the third metal layer passes through the second dielectric layer, the first dielectric layer and aluminum gallium nitride The layer is connected to the two-dimensional electron gas, and the third metal layer is connected to the gate metal layer through the second conductor structure, so that the first capacitor, the second capacitor and the third capacitor are connected in parallel.
- the two-dimensional electron gas is located under the AlGaN layer, and the two-dimensional electron gas is generated when the voltage between the third metal layer and the gate metal layer is within a preset range.
- the first metal layer, the P-type conductive layer, and the two-dimensional electron gas form the third capacitor, and three capacitors are formed on the integrated device at the same time, and the third metal layer is connected to the gate metal layer through the second conductor structure, so that the first The parallel connection of the capacitor, the second capacitor and the third capacitor can further increase the capacitor integration density of the integrated device.
- the polarity of the third metal layer is opposite to that of the first metal layer.
- the aluminum gallium nitride layer is disposed on the aluminum nitride layer, and the two-dimensional electron gas is located below the aluminum nitride layer.
- the two-dimensional electron gas is located between the aluminum nitride layer and the gallium nitride layer, which can increase the electron concentration of the two-dimensional electron gas.
- the P-type conductive layer includes P-type gallium nitride or P-type aluminum gallium nitride.
- the first metal layer includes titanium nitride or tungsten.
- materials of the first conductor structure and the second conductor structure include copper or aluminum.
- the second aspect of the present application provides an integrated device, including: an aluminum gallium nitride layer; a first dielectric layer disposed on the aluminum gallium nitride layer; a second dielectric layer disposed on the first dielectric layer; A gate metal layer between the first dielectric layer and the second dielectric layer; and, a second metal layer disposed on the second dielectric layer; wherein, two-dimensional electron gas is included under the aluminum gallium nitride layer; two The dimensional electron gas, the first dielectric layer and the gate metal layer are used to form the first capacitor; the second metal layer, the second dielectric layer and the gate metal layer are used to form the second capacitor; the second metal layer passes through the second dielectric layer, the first dielectric layer, and the AlGaN layer are in contact with the two-dimensional electron gas, so that the first capacitor is connected in parallel with the second capacitor.
- the two-dimensional electron gas is located under the AlGaN layer, and the two-dimensional electron gas is generated when the voltage between the second metal layer and the gate metal layer is within a predetermined range.
- the gate metal layer, the first dielectric layer and the two-dimensional electron gas form the first capacitor
- the gate metal layer, the second dielectric layer and the second metal layer form the second capacitor
- two capacitors are formed on the integrated device at the same time, and the two The dimensional electron gas is connected to the second metal layer, so that the first capacitor and the second capacitor are connected in parallel, thereby increasing the capacitor integration density of the integrated device.
- the polarity of the second metal layer is opposite to that of the gate metal layer.
- the first dielectric layer includes P-type GaN or P-type Aluminum Gallium Nitride
- the gate metal layer passes through the first dielectric layer and is formed on P-type GaN or P-type Aluminum Gallium Nitride. over aluminum gallium.
- the aluminum gallium nitride layer is disposed on the aluminum nitride layer, and the two-dimensional electron gas is located below the aluminum nitride layer.
- the material of the conductor structure includes copper or aluminum.
- the third aspect of the present application provides a semiconductor device, including the integrated device provided in the aforementioned first aspect or any optional manner of the first aspect, and a semiconductor composition formed on the integrated device.
- the fourth aspect of the present application provides a semiconductor device, including the integrated device provided in the aforementioned second aspect or any optional manner of the second aspect, and a semiconductor composition formed on the integrated device.
- the fifth aspect of the present application provides a manufacturing method of an integrated device, including: forming a first dielectric layer on the first metal layer; forming a gate metal layer on the first dielectric layer; forming a second dielectric layer on the gate metal layer A dielectric layer; forming a second metal layer on the second dielectric layer; wherein, the first metal layer, the first dielectric layer and the gate metal layer are used to form the first capacitor; the second metal layer, the second dielectric layer and the gate The metal layer is used to form the second capacitor; the first metal layer is connected to the second metal layer through the first conductor structure, so that the first capacitor and the second capacitor are connected in parallel.
- the method further includes: the polarity of the gate metal layer is opposite to that of the first metal layer, and the polarity of the second metal layer is opposite to that of the gate metal layer.
- the method further includes: forming the first metal layer on the P-type conductive layer, the P-type conductive layer is formed on the aluminum gallium nitride layer, and the aluminum gallium nitride layer includes a two-dimensional Electron gas, the first metal layer, P-type conductive layer and two-dimensional electron gas are used to form the third capacitor; the third metal layer is formed on the second dielectric layer, and the third metal layer passes through the second dielectric layer, the first dielectric layer The layer and the aluminum gallium nitride layer are connected to the two-dimensional electron gas; the third metal layer is connected to the gate metal layer through the second conductor structure, so that the first capacitor, the second capacitor and the third capacitor are connected in parallel.
- the polarity of the third metal layer is opposite to that of the first metal layer.
- the aluminum gallium nitride layer is formed on the aluminum nitride layer, and the two-dimensional electron gas is located below the aluminum nitride layer.
- the P-type conductive layer includes P-type gallium nitride or P-type aluminum gallium nitride.
- the first metal layer includes titanium nitride or tungsten.
- materials of the first conductor structure and the second conductor structure include copper or aluminum.
- the sixth aspect of the present application provides a method for manufacturing an integrated device, including: forming a first dielectric layer on an aluminum gallium nitride layer; forming a gate metal layer on the first dielectric layer; forming a second dielectric layer on the gate metal layer Two dielectric layers; a second metal layer is formed on the second dielectric layer; a two-dimensional electron gas is included under the aluminum gallium nitride layer, and the two-dimensional electron gas, the first dielectric layer and the gate metal layer are used to form the first capacitor; The second metal layer, the second dielectric layer and the gate metal layer are used to form the second capacitor; the second metal layer passes through the second dielectric layer, the first dielectric layer and the aluminum gallium nitride layer, and is connected to the two-dimensional electron gas , so that the first capacitor is connected in parallel with the second capacitor.
- the polarity of the second metal layer is opposite to that of the gate metal layer.
- the first dielectric layer includes P-type GaN or P-type Aluminum Gallium Nitride
- the gate metal layer passes through the first dielectric layer and is formed on P-type GaN or P-type Aluminum Gallium Nitride. over aluminum gallium.
- the aluminum gallium nitride layer is formed on the aluminum nitride layer, and the two-dimensional electron gas is located below the aluminum nitride layer.
- the seventh aspect of the present application provides a driving circuit, including: a gate driver, and an integrated device according to any one of the first and second aspects, or implemented using any one of the fifth and sixth aspects
- the integrated device obtained by the method; wherein: the gate driver provides current for the gate in the above integrated device.
- the eighth aspect of the present application provides an electronic device, the electronic device includes the integrated device according to any one of the first aspect and the second aspect, or uses the method of any one of the fifth aspect and the sixth aspect The resulting integrated device.
- FIG. 1 is a power amplification architecture diagram provided by an embodiment of the present application
- FIG. 2 is a schematic structural diagram of an integrated device provided in an embodiment of the present application.
- FIG. 3 is a schematic diagram of an equivalent circuit diagram of an integrated device provided in an embodiment of the present application.
- Fig. 4 is another structural schematic diagram of the integrated device provided by the embodiment of the present application.
- FIG. 5 is another schematic diagram of an equivalent circuit diagram of an integrated device provided in an embodiment of the present application.
- FIG. 6 is another structural schematic diagram of an integrated device provided by an embodiment of the present application.
- FIG. 7 is another schematic diagram of an equivalent circuit diagram of an integrated device provided in an embodiment of the present application.
- FIG. 8 is another structural schematic diagram of an integrated device provided by an embodiment of the present application.
- FIG. 9 is another schematic diagram of an equivalent circuit diagram of an integrated device provided in an embodiment of the present application.
- FIG. 10 is a schematic diagram of an embodiment of a manufacturing method of an integrated device provided in an embodiment of the present application.
- Fig. 11 is a schematic diagram of another embodiment of the manufacturing method of the integrated device provided by the embodiment of the present application.
- Fig. 12 is a schematic diagram of another embodiment of the manufacturing method of the integrated device provided by the embodiment of the present application.
- Fig. 13 is a schematic diagram of another embodiment of the manufacturing method of the integrated device provided by the embodiment of the present application.
- Fig. 14 is a schematic diagram of another embodiment of the manufacturing method of the integrated device provided by the embodiment of the present application.
- FIG. 15 is a schematic diagram of a driving circuit provided by an embodiment of the present application.
- FIG. 16 is a schematic diagram of an electronic device provided by an embodiment of the present application.
- Embodiments of the present application provide an integrated device, a semiconductor device, and a manufacturing method of the integrated device, which are used to increase the capacitance integration density of the integrated device.
- a and B can be in direct contact or not, for example: A and B can include C, wherein, C can not completely separate A and B, or can completely separate A and B .
- Gallium Nitride (GaN) is a semiconductor with a large bandgap width, which belongs to the wide bandgap semiconductor.
- Gallium nitride is an excellent material for microwave power transistors and a new type of semiconductor material for the development of microelectronic devices and optoelectronic devices. It has a wide direct band gap, strong atomic bonds, high thermal conductivity, and good chemical stability (almost not Any acid corrosion) and other properties and strong radiation resistance.
- Two-dimensional electron gas refers to the phenomenon that the electron gas can move freely in the two-dimensional direction, but is restricted in the third dimension.
- the two-dimensional electron gas is located in the aluminum nitride device platform of the gallium nitride Between the gallium layer and the gallium nitride layer, the two-dimensional electron gas can also be called channel electrons. It is the basis for the operation of many field effect devices (eg MOSFET, HEMT).
- Metal-insulators-metal (metal-insulators-metal, MIM) capacitance also called inter-board capacitance
- MIM capacitors cause the least interference to transistors, and can provide better linearity (Linearity) and symmetry (Symmetry), so It has been widely used, especially in the field of mixed signal and radio frequency.
- FIG. 1 is a power amplifier architecture diagram provided by an embodiment of the present application, and the architecture diagram includes an input module 11 , a power amplifier 12 and an output module 13 .
- the power amplifier 12 can amplify the output power of the input module 11 and then output it to the output module 13 . Since the voltage of power grids in various countries in the world varies greatly, for example, the AC voltage of country A is 220V, which is relatively stable. However, the grid voltage of country B fluctuates greatly, ranging from 90VAC to 350VAC.
- Gallium nitride (GaN) devices can be used to increase the switching frequency, thereby reducing the size of the transformer, that is, the power amplifier 12 is a gallium nitride (GaN) device, and the GaN device has larger bandwidth, higher amplifier gain, higher energy efficiency, Smaller semiconductor devices.
- GaN devices can work at high temperatures above 200°C, can carry higher energy density, and have higher reliability; larger bandgap and insulation damage
- the electric field reduces the on-resistance of the device, which is conducive to improving the overall energy efficiency of the device; the fast electron saturation speed and high carrier mobility allow the device to work at high speed.
- the metal layers available in the process flow are usually used to form the plates of the capacitor (such as the field plate layer and the gate metal layer). Therefore, the integration of the capacitor is limited by the thickness of the dielectric layer, and the dielectric layer It often occupies most of the structure of the chip, and the integration of capacitors is limited by the chip area.
- an embodiment of the present application provides an integrated device, and the structure of the integrated device is described below.
- FIG. 2 it is a schematic structural diagram of an integrated device provided by an embodiment of the present application, the integrated device includes a semiconductor substrate 21, a gallium nitride (GaN) layer 22, and an aluminum gallium nitride (AlGaN) layer 23 , P-type conductive layer 24 , first metal layer 25 , first dielectric layer 26 , gate metal layer 27 , second dielectric layer 28 and second metal layer 29 .
- GaN gallium nitride
- AlGaN aluminum gallium nitride
- semiconductor substrate 21 the material of this semiconductor substrate 21 can be silicon (Si) substrate, sapphire (Al2O3) substrate, silicon-on-insulator (SOI) substrate, gallium nitride (GaN) substrate, gallium arsenide ( GaAs) substrate, indium phosphide (InP) substrate, aluminum nitride (AlN) substrate, silicon carbide (SiC) substrate, quartz (SiO2) substrate or diamond (C) substrate.
- Si silicon
- Al2O3 silicon-on-insulator
- SOI silicon-on-insulator
- GaN gallium nitride
- GaAs gallium arsenide
- InP indium phosphide
- AlN aluminum nitride
- SiC silicon carbide
- SiO2 quartz
- C diamond
- a gallium nitride layer 22 is disposed on the semiconductor substrate 21, and the gallium nitride layer 22 is preferably a gallium nitride layer without doping (magnesium Mg can be used as a dopant for doping).
- An aluminum gallium nitride layer 23 is disposed on the gallium nitride layer 22 , and the aluminum gallium nitride layer 23 is preferably an undoped aluminum gallium nitride layer.
- a P-type conductive layer 24 is arranged on the aluminum gallium nitride layer 23, and the P-type conductive layer 24 is located on the active area of the aluminum gallium nitride layer 23.
- the P-type conductive layer 24 can be P-type gallium nitride or P-type nitrogen Aluminum Gallium Chloride.
- the P-type GaN may be a beryllium-doped GaN layer, a Zn-doped GaN layer or a Mg-doped GaN layer.
- the P-type conductive layer 24 is provided with a first metal layer 25, preferably, the material of the first metal layer can be titanium nitride (TiN) or tungsten (W), wherein, titanium nitride is a transition metal nitride, it Composed of ionic bonds, metal bonds and covalent bonds, it has high strength, high hardness, high temperature resistance, acid and alkali corrosion resistance, wear resistance and good electrical and thermal conductivity, as an excellent material for ohmic contact metals .
- TiN titanium nitride
- W tungsten
- a first dielectric layer 26 is disposed on the first metal layer 25 , and the first dielectric layer 26 covers the first metal layer 25 , the P-type conductive layer 24 and the AlGaN layer 23 at the same time.
- a gate metal layer 27 is disposed on the first dielectric layer 26 , a second dielectric layer 28 is disposed on the gate metal layer 27 , and a second metal layer 29 is disposed on the second dielectric layer 28 .
- the first dielectric layer 26 can separate the gate metal layer 27 and the first metal layer 25, and the polarities of the first metal layer 25 and the gate metal layer 27 are opposite, so that the gate metal layer 27, the first dielectric layer 26 and the second A metal layer 25 constitutes the first capacitor (MIM), the second dielectric layer 28 separates the gate metal layer 27 and the second metal layer 29, and the polarities of the second metal layer 29 and the gate metal layer 27 are opposite, so that , the gate metal layer 27, the second dielectric layer 28 and the second metal layer 29 form a second capacitor (MIM).
- MIM first capacitor
- the first metal layer 25 and the second metal layer 29 are connected through the first conductor structure (not shown in the figure), the first end of the first capacitor is interconnected with the first end of the second capacitor, and the first end of the first capacitor is interconnected.
- the two terminals are interconnected with the second terminal of the second capacitor, that is, the first capacitor and the second capacitor are connected in parallel, then the equivalent circuit diagram of the integrated device can be shown in FIG. 3 , and the dotted line connection in the circuit diagram indicates the same polarity.
- the first capacitor and the second capacitor may be connected in parallel through other connection manners, and the first capacitor and the second capacitor may be connected in series through other connection manners, which are not limited herein.
- the gate metal layer may be a positive electrode layer
- the second metal layer may be a negative electrode layer.
- the first conductor structure can be shown in FIG. 4 , the first metal layer 25 is connected to the metal M1 through the conductor D1 in the etching hole of the dielectric layer on it, and the second metal layer 29 is connected to the metal M1 through the conductor D1 of the dielectric layer on it.
- the conductor D2 in the etched hole is connected to the metal M1, wherein the two metals M1 belong to the same piece of metal (not shown in the figure).
- the gate metal layer and the titanium nitride layer can be separated by the first dielectric layer
- the second dielectric layer can separate the gate metal layer and the second metal layer
- the first metal layer and the second metal layer can be separated by the first conductor structure.
- the second metal layer is connected, so that the first capacitor and the second capacitor are connected in parallel, so that the capacitance of the integrated device is increased, the withstand voltage of the integrated device is improved, and high voltage and high capacitance density are realized at the same time.
- the application provides another structural schematic diagram of an integrated device as shown in Figure 5, the integrated device includes a semiconductor substrate 21, gallium nitride (GaN) layer 22 , aluminum gallium nitride (AlGaN) layer 23 , P-type conductive layer 24 , first metal layer 25 , first dielectric layer 26 , gate metal layer 27 , second dielectric layer 28 and second metal layer 29 .
- GaN gallium nitride
- AlGaN aluminum gallium nitride
- semiconductor substrate 21 the material of this semiconductor substrate 21 can be silicon (Si) substrate, sapphire (Al2O3) substrate, silicon-on-insulator (SOI) substrate, gallium nitride (GaN) substrate, gallium arsenide ( GaAs) substrate, indium phosphide (InP) substrate, aluminum nitride (AlN) substrate, silicon carbide (SiC) substrate, quartz (SiO2) substrate or diamond (C) substrate.
- Si silicon
- Al2O3 silicon-on-insulator
- SOI silicon-on-insulator
- GaN gallium nitride
- GaAs gallium arsenide
- InP indium phosphide
- AlN aluminum nitride
- SiC silicon carbide
- SiO2 quartz
- C diamond
- a gallium nitride layer 22 is disposed on the semiconductor substrate 21, and the gallium nitride layer 22 is preferably a gallium nitride layer without doping (magnesium Mg can be used as a dopant for doping).
- An aluminum gallium nitride layer 23 is disposed on the gallium nitride layer 22 , and the aluminum gallium nitride layer 23 is preferably an undoped aluminum gallium nitride layer.
- a P-type conductive layer 24 is arranged on the aluminum gallium nitride layer 23, and the P-type conductive layer 24 is located on the active area of the aluminum gallium nitride layer 23.
- the P-type conductive layer 24 can be P-type gallium nitride or P-type nitrogen Aluminum Gallium Chloride. Taking p-type gallium nitride as an example, the p-type gallium nitride may be a beryllium-doped gallium nitride layer, a zinc-doped gallium nitride layer or a magnesium-doped gallium nitride layer;
- the material of the first metal layer can be titanium nitride (TiN) or tungsten (W), wherein, titanium nitride is a transition metal nitride, it Composed of ionic bonds, metal bonds and covalent bonds, it has high strength, high hardness, high temperature resistance, acid and alkali corrosion resistance, wear resistance and good electrical and thermal conductivity, as an excellent material for ohmic contact metals .
- a first dielectric layer 26 is disposed on the first metal layer 25 , and the first dielectric layer 26 covers the first metal layer 25 , the P-type conductive layer 24 and the AlGaN layer 23 at the same time.
- a gate metal layer 27 is disposed on the first dielectric layer 26 , a second dielectric layer 28 is disposed on the gate metal layer 27 , and a second metal layer 29 is disposed on the second dielectric layer 28 .
- the integrated device also includes a third metal layer 210, the third metal layer 210 and the aluminum gallium nitride layer 23, wherein the third metal layer 210 also passes through the first dielectric layer 26, the second dielectric layer 28 and the nitride
- the AlGa layer 23 is connected to the GaN layer 22 .
- the first dielectric layer 26 can separate the gate metal layer 27 and the first metal layer 25, and the polarities of the first metal layer 25 and the gate metal layer 27 are opposite, so that the gate metal layer 27, the first dielectric layer 26 and the second A metal layer 25 constitutes the first capacitor (MIM), the second dielectric layer 28 separates the gate metal layer 27 and the second metal layer 29, and the polarities of the second metal layer 29 and the gate metal layer 27 are opposite, so that , the gate metal layer 27, the second dielectric layer 28 and the second metal layer 29 constitute the second capacitor (MIM), and the first metal layer 25, the P-type conductive layer 24 and the two-dimensional electron gas 211 constitute the third capacitor (CJ).
- MIM first capacitor
- CJ third capacitor
- the two-dimensional electron gas 211 is generated when the voltage between the gate metal layer 57 and the third metal layer 210 is within a preset range, and the voltage range of the junction capacitance is 5-7V.
- the third metal layer 210 is in contact with the two-dimensional electron gas, and the polarity of the third metal layer 210 is opposite to that of the first metal layer 25 .
- an aluminum nitride layer is further included between the gallium nitride layer and the aluminum gallium nitride layer, and the two-dimensional electron gas is located between the aluminum nitride layer and the gallium nitride layer, which can increase the electron concentration of the two-dimensional electron gas.
- the first conductor structure and the second conductor structure can be copper or aluminum
- the first end of the first capacitor, the first end of the second capacitor and the first end of the third capacitor are interconnected, and the second end of the first capacitor 1.
- the second end of the second capacitor is interconnected with the second end of the third capacitor, that is, the first capacitor, the second capacitor and the third capacitor are connected in parallel, then the equivalent circuit diagram of the integrated device can be shown in reference 6.
- first conductor and second conductor can refer to the relevant description of the first conductor in FIG. M2.
- the two-dimensional electron gas corresponding to the first metal layer, the P-type conductive layer, and the third metal layer forms a third capacitor
- the third metal layer is connected to the gate metal layer through the second conductor structure, so that The first capacitor, the second capacitor and the third capacitor are connected in parallel, so that the capacitance capacity of the integrated device is increased, the withstand voltage of the integrated device is improved, and the capacitance integration density of the integrated device can be further increased.
- the integrated device includes a semiconductor substrate 21, a gallium nitride (GaN) layer 22, an aluminum gallium nitride (AlGaN) layer 23 , first dielectric layer 26 , gate metal layer 27 , second dielectric layer 28 and second metal layer 29 .
- GaN gallium nitride
- AlGaN aluminum gallium nitride
- semiconductor substrate 21 the material of this semiconductor substrate 21 can be silicon (Si) substrate, sapphire (Al2O3) substrate, silicon-on-insulator (SOI) substrate, gallium nitride (GaN) substrate, gallium arsenide ( GaAs) substrate, indium phosphide (InP) substrate, aluminum nitride (AlN) substrate, silicon carbide (SiC) substrate, quartz (SiO2) substrate or diamond (C) substrate.
- Si silicon
- Al2O3 silicon-on-insulator
- SOI silicon-on-insulator
- GaN gallium nitride
- GaAs gallium arsenide
- InP indium phosphide
- AlN aluminum nitride
- SiC silicon carbide
- SiO2 quartz
- C diamond
- a gallium nitride layer 22 is disposed on the semiconductor substrate 21, and the gallium nitride layer 22 is preferably a gallium nitride layer without doping (magnesium Mg can be used as a dopant for doping).
- An aluminum gallium nitride layer 23 is disposed on the gallium nitride layer 22 , and the aluminum gallium nitride layer 23 is preferably an undoped aluminum gallium nitride layer.
- a first dielectric layer 26 is disposed on the AlGaN layer 23, wherein the first dielectric layer 26 may include a fourth metal layer 261, wherein the fourth metal layer 261 may be P-type GaN or P-type AlN Ga, the fourth metal layer 261 is located on the active area of the AlGaN layer 23 .
- the P-type GaN may be a GaN layer doped with Beryllium (Be), a GaN layer doped with Zinc (Zn), or a GaN layer doped with Magnesium (Mg).
- the fourth metal layer may also include titanium nitride or tungsten, wherein the titanium nitride or tungsten completely separates the P-type gallium nitride and the gate metal layer 27 .
- a gate metal layer 27 is disposed on the first dielectric layer 26 , a second dielectric layer 28 is disposed on the gate metal layer 27 , and a second metal layer 29 is disposed on the second dielectric layer 28 .
- the first dielectric layer 26 is etched to expose the fourth metal layer 261 , and the gate metal layer 27 is formed on the etching hole formed by the etching.
- the first dielectric layer 26 can separate the gate metal layer 27 and the aluminum gallium nitride layer 23, and the two-dimensional electron gas 211 under the aluminum gallium nitride layer 23 is connected to the second metal layer 29, since the first dielectric layer includes the second metal layer Four metal layers 261, the fourth metal layer 261 can be P-type gallium nitride or P-type aluminum gallium nitride, and the polarities of the second metal layer 29 and the gate metal layer 27 are opposite, so that the gate metal layer 27,
- the first capacitance formed by the first dielectric layer 26 and the two-dimensional electron gas 211 is junction capacitance (CJ)
- the second dielectric layer 28 separates the gate metal layer 27 and the second metal layer 29, and the second metal layer 29 and
- the polarity of the gate metal layer 27 is opposite, so that the gate metal layer 27 , the second dielectric layer 28 and the second metal layer 29 form a second capacitor (MIM).
- the two-dimensional electron gas 211 is generated when the voltage between the gate metal layer
- an aluminum nitride layer is further included between the gallium nitride layer and the aluminum gallium nitride layer, and the two-dimensional electron gas is located between the aluminum nitride layer and the gallium nitride layer, which can increase the electron concentration of the two-dimensional electron gas.
- the second metal layer passes through the second dielectric layer 28, the first dielectric layer 26 and the aluminum gallium nitride layer 23, and is in contact with the two-dimensional electron gas 211. At this time, the first terminal of the first capacitor is connected to the first terminal of the second capacitor.
- the terminals are interconnected, the second terminal of the first capacitor is connected with the second terminal of the second capacitor, that is, the first capacitor and the second capacitor are connected in parallel, then the equivalent circuit diagram of the integrated device can be shown in FIG. 8 .
- the first capacitor and the second capacitor may be connected in parallel through other connection manners, and the first capacitor and the second capacitor may be connected in series through other connection manners, which are not limited herein.
- the gate metal layer may be a positive electrode layer
- the second metal layer may be a negative electrode layer.
- the gate metal layer, the first dielectric layer and the two-dimensional electron gas constitute the first capacitor
- the gate metal layer, the second dielectric layer and the second metal layer constitute the second capacitor
- the two-dimensional electron gas and the second The metal layers are related, so that the first capacitor and the second capacitor are connected in parallel, so that the capacitance capacity of the integrated device is increased, the withstand voltage of the integrated device is improved, and the capacitance integration density of the integrated device is increased.
- the embodiment of the present application also provides another structural schematic diagram of an integrated device as shown in FIG. 9, the integrated device includes a semiconductor substrate 21, a nitrogen GaN layer 22 , AlGaN layer 23 , first dielectric layer 26 , gate metal layer 27 , second dielectric layer 28 and second metal layer 29 .
- semiconductor substrate 21 the material of this semiconductor substrate 21 can be silicon (Si) substrate, sapphire (Al2O3) substrate, silicon-on-insulator (SOI) substrate, gallium nitride (GaN) substrate, gallium arsenide ( GaAs) substrate, indium phosphide (InP) substrate, aluminum nitride (AlN) substrate, silicon carbide (SiC) substrate, quartz (SiO2) substrate or diamond (C) substrate.
- Si silicon
- Al2O3 silicon-on-insulator
- SOI silicon-on-insulator
- GaN gallium nitride
- GaAs gallium arsenide
- InP indium phosphide
- AlN aluminum nitride
- SiC silicon carbide
- SiO2 quartz
- C diamond
- a gallium nitride layer 22 is disposed on the semiconductor substrate 21, and the gallium nitride layer 22 is preferably a gallium nitride layer without doping (magnesium Mg can be used as a dopant for doping).
- An aluminum gallium nitride layer 23 is disposed on the gallium nitride layer 22 , and the aluminum gallium nitride layer 23 is preferably an undoped aluminum gallium nitride layer.
- a first dielectric layer 26 is arranged on the AlGaN layer 23, a gate metal layer 27 is arranged on the first dielectric layer 26, a second dielectric layer 28 is arranged on the gate metal layer 27, and a second dielectric layer 28 is arranged on the second dielectric layer 28. There is a second metal layer 29 .
- the first dielectric layer 26 can separate the gate metal layer 27 and the aluminum gallium nitride layer 23.
- the first dielectric layer 26 in the embodiment of the present application can be a common dielectric material, and the two-dimensional electron gas under the aluminum gallium nitride layer 23 211 is connected to the second metal layer 29, and the polarities of the second metal layer 29 and the gate metal layer 27 are opposite, so that the first capacitance formed by the gate metal layer 27, the first dielectric layer 26 and the two-dimensional electron gas 211
- MIM inter-plate capacitance
- the second dielectric layer 28 separates the gate metal layer 27 and the second metal layer 29, and the polarities of the second metal layer 29 and the gate metal layer 27 are opposite, so that the gate metal layer 27.
- the second dielectric layer 28 and the second metal layer 29 form a second capacitor (MIM).
- the two-dimensional electron gas 211 is generated when the voltage between the gate metal layer 27 and the second metal layer 29 is within a preset range, and the voltage range of the junction capacitance is 5-7V.
- an aluminum nitride layer is further included between the gallium nitride layer and the aluminum gallium nitride layer, and the two-dimensional electron gas is located between the aluminum nitride layer and the gallium nitride layer, which can increase the electron concentration of the two-dimensional electron gas.
- the second metal layer passes through the second dielectric layer 28, the first dielectric layer 26 and the aluminum gallium nitride layer 23, and connects with the two-dimensional electron gas 211. At this time, the first end of the first capacitor and the two ends of the second capacitor are connected, that is, the first capacitor and the second capacitor are connected in parallel, then the equivalent circuit diagram of the integrated device can be shown in FIG. 10 .
- first capacitor and the second capacitor may be connected in parallel through other connection manners, and the first capacitor and the second capacitor may be connected in series through other connection manners, which are not limited herein.
- the gate metal layer may be a positive electrode layer
- the second metal layer may be a negative electrode layer.
- the gate metal layer, the first dielectric layer and the two-dimensional electron gas constitute the first capacitor
- the gate metal layer, the second dielectric layer and the second metal layer constitute the second capacitor
- the two-dimensional electron gas and the second The potential of the two metal layers is the same, so that the first capacitance and the second capacitance are connected in parallel, and there is no junction capacitance, so that the capacitance capacity of the integrated device is increased, and the withstand voltage of the integrated device is improved, which can not only increase the capacitance integration density of the integrated device, but also realize High working voltage.
- the number of capacitors in the integrated device is not limited to 2-3 or more than 3.
- the integrated device may also include a fourth dielectric layer and a fourth metal layer, so that the integrated device One more capacitor can be added, or the gallium nitride layer and the aluminum gallium nitride layer can be divided into two parts, and the two-dimensional electron gas can be provided by different negative electrodes, that is, the integrated device can also include another junction capacitor or plate Between capacitors, whether to connect them in parallel or in series, you can connect the two ends of the capacitors through a conductor structure according to requirements, which is not limited here.
- FIG. 11 is an embodiment of a manufacturing method of an integrated device provided by an embodiment of the present application.
- the material of the semiconductor substrate may be silicon (Si) substrate, sapphire (Al2O3) substrate, silicon-on-insulator (SOI) substrate, gallium nitride (GaN) substrate, gallium arsenide ( GaAs) substrate, indium phosphide (InP) substrate, aluminum nitride (AlN) substrate, silicon carbide (SiC) substrate, quartz (SiO2) substrate or diamond (C) substrate.
- a gallium nitride epitaxial wafer is grown on a semiconductor substrate as a buffer layer.
- the gallium nitride layer is preferably a gallium nitride layer without doping (magnesium Mg can be used as a dopant for doping).
- the thickness of the aluminum gallium nitride layer may be 25 nm to 35 nm, and the specific formation method may be to grow on the gallium nitride layer at a temperature of about 1100 ° C.
- the aluminum gallium nitride layer is preferably undoped doped AlGaN layer.
- a P-type conductive layer is formed on the active region of the AlGaN layer, and the P-type conductive layer is used to deplete the surface state negative electrons on the AlGaN layer and neutralize the AlGaN layer Hanging keys on layers.
- the P-type conductive layer may be P-type GaN or P-type AlGaN.
- the active area of the AlGaN layer is the area where the gate electrode, the source electrode, the drain electrode and/or the electrodes will be formed in the future.
- photoresist is used to cover the area outside the active area, and then a P-type conductive layer is formed on the active area, and then the photoresist and the P-type conductive layer outside the active area are removed; in another In one implementation, a P-type conductive layer is formed on the AlGaN layer, and then a layer of photoresist is formed on the active area, and then the P-type conductive layer outside the active area is removed, and finally the photoresist is removed. glue.
- the specific forming method can be selected according to actual needs, and will not be repeated here.
- the first metal layer only covers the P-type conductive layer, and the first metal layer may be titanium nitride or tungsten, which can provide good conductivity.
- titanium nitride is a transition metal nitride, which is composed of ionic bonds, metal bonds and covalent bonds. It has high strength, high hardness, high temperature resistance, acid and alkali corrosion resistance, wear resistance and good electrical conductivity. and thermal conductivity, as an excellent material for ohmic contact metals.
- the first dielectric layer is formed on the first metal layer, and the first dielectric layer also covers the P-type conductive layer and the aluminum gallium nitride layer.
- the first dielectric layer is used to separate the layers and maintain the insulation.
- a layer of photoresist is covered on the first dielectric layer, and the photoresist is left in an uncovered area at the same position as the active area of the AlGaN layer, and then a gate is formed on the uncovered area.
- the electrode metal layer, and then remove the photoresist and the gate metal layer outside the active area may also be another implementation manner in step 1101, which will not be repeated here.
- the polarity of the gate metal layer and the first metal layer are opposite, and the gate metal layer and the first metal layer separated by the first dielectric layer form a first capacitor, and at this time, the first capacitor is an inter-plate capacitor.
- a second dielectric layer is formed on the gate metal layer, and the second dielectric layer covers the first dielectric layer at the same time.
- the second metal layer is directly formed on the second dielectric layer, the polarity of the second metal layer and the gate metal layer are opposite, and the gate metal layer and the second metal layer separated by the second dielectric layer layer constitutes the second capacitor.
- the second capacitance is the inter-board capacitance.
- the first conductor structure is used to connect the first metal layer and the second metal layer, so that the first end of the first capacitor and the first end of the second capacitor can be interconnected, and the second end of the first capacitor and the second end of the second capacitor can be interconnected.
- the second terminals of the second capacitor are interconnected, that is, the first capacitor and the second capacitor are connected in parallel to realize an integrated device with high voltage range and high capacitance density.
- the material of the first conductor structure may be copper or aluminum.
- the gate metal layer and the titanium nitride layer can be separated by the first dielectric layer
- the second dielectric layer can separate the gate metal layer and the second metal layer
- the first metal layer and the second metal layer can be separated by the first conductor structure.
- the second metal layer is connected, so that the first capacitor and the second capacitor are connected in parallel, so that the capacitance of the integrated device is increased, the withstand voltage of the integrated device is improved, and high voltage and high capacitance density are realized at the same time.
- FIG. 12 is another embodiment of a manufacturing method of an integrated device provided by an embodiment of the present application.
- a semiconductor substrate is provided.
- steps 1201-1210 reference may be made to the related descriptions of steps 1101-1110 in the method shown in FIG. 12 , which will not be repeated here.
- the first dielectric layer, the second dielectric layer, and the aluminum gallium nitride layer outside the P-type conductive layer area can be etched until the gallium nitride layer is exposed, and an etching hole is obtained, and then the etching hole can be obtained.
- the third metal layer is formed by etching holes, and the polarity of the third metal layer is opposite to that of the first metal layer.
- a second metal layer is generated under the aluminum gallium nitride layer.
- the third metal layer is connected to the two-dimensional electron gas, that is, the polarity of the two-dimensional electron gas is opposite to that of the first metal layer.
- the two-dimensional electron gas is located between the aluminum nitride layer and the gallium nitride layer.
- the electron concentration of the two-dimensional electron gas can be increased.
- the first metal layer, the P-type conductive layer and the two-dimensional electron gas together constitute a third capacitor.
- the P-type conductive layer includes P-type gallium nitride or P-type aluminum gallium nitride
- the third capacitor is a junction capacitor, and a second conductor structure can be used to connect the third metal layer and the gate metal layer, so that the first capacitor, the second capacitor, and the third capacitor are connected in parallel to obtain an integration with a higher capacitance density. device.
- the material of the first conductor structure and the second conductor structure may be copper or aluminum.
- the two-dimensional electron gas corresponding to the first metal layer, the P-type conductive layer, and the third metal layer forms a third capacitor
- the third metal layer is connected to the gate metal layer through the second conductor structure, so that The first capacitor, the second capacitor and the third capacitor are connected in parallel, so that the capacitance capacity of the integrated device is increased, the withstand voltage of the integrated device is improved, and the capacitance integration density of the integrated device can be further increased.
- FIG. 13 is another embodiment of a manufacturing method of an integrated device provided by an embodiment of the present application.
- a semiconductor substrate is provided.
- steps 1301-1303 reference may be made to the relevant description of steps 1101-1103 in the method shown in FIG. 11 , and details are not repeated here.
- the first dielectric layer is formed on the AlGaN layer, wherein the first dielectric layer may include P-type GaN or P-type AlGaN.
- the first dielectric layer is etched until the P-type gallium nitride or P-type aluminum gallium nitride in the first dielectric layer is exposed. Specifically, when the P-type gallium nitride or the P-type aluminum gallium nitride When titanium nitride is also provided on the aluminum gallium, it is only necessary to etch the first dielectric layer until the titanium nitride is exposed.
- a gate metal layer is formed in the etching hole etched in the first dielectric layer, and the gate metal layer is connected to P-type gallium nitride or P-type aluminum gallium nitride.
- the gate metal layer is connected with the titanium nitride.
- a second dielectric layer is formed on the gate metal layer.
- the second dielectric layer covers both the first dielectric layer and the gate metal layer.
- the first dielectric layer, the second dielectric layer, and the aluminum gallium nitride layer outside the area of the gate metal layer can be etched to obtain an etching hole, and the gallium nitride is exposed at the bottom of the etching hole layer, and then a second metal layer can be formed on the etching hole and the second dielectric layer, the polarity of the second metal layer and the gate metal layer are opposite, and the gate metal layer separated by the second dielectric layer and the second metal layer form a first capacitance, the first capacitance is an inter-plate capacitance, and when the voltage between the gate metal layer and the second metal layer is within a preset range, a two-dimensional electron gas is generated under the aluminum gallium nitride layer, The two-dimensional electron gas is connected to the second metal layer, and the gate metal layer, the first dielectric layer and the two-dimensional electron gas together form a third capacitance (junction capacitance).
- the potential of the second metal layer is the same as that of
- the two-dimensional electron gas is located between the aluminum nitride layer and the gallium nitride layer.
- the electron concentration of the two-dimensional electron gas can be increased.
- the gate metal layer may be a positive electrode layer
- the second metal layer may be a negative electrode layer.
- the gate metal layer, the first dielectric layer and the two-dimensional electron gas constitute the first capacitor
- the gate metal layer, the second dielectric layer and the second metal layer constitute the second capacitor
- the two-dimensional electron gas and the second The metal layers are related, so that the first capacitor and the second capacitor are connected in parallel, so that the capacitance capacity of the integrated device is increased, the withstand voltage of the integrated device is improved, and the capacitance integration density of the integrated device is increased.
- FIG. 14 is another embodiment of a manufacturing method of an integrated device provided by an embodiment of the present application.
- a semiconductor substrate is provided.
- steps 1401-1403 reference may be made to the relevant description of steps 1101-1103 in the method shown in FIG. 11 , and details are not repeated here.
- the first dielectric layer covers the AlGaN layer, and the material of the first dielectric layer is a dielectric structure in the inter-board capacitor, which is used to separate different levels and provide insulation.
- the gate metal layer is directly formed on the first dielectric layer, and then the gate metal layer on the active region of the aluminum gallium nitride layer is partially covered with photoresist, and then removed Gate metal layer not covered with photoresist, then remove photoresist.
- the photoresist is covered on the first dielectric layer except the part above the active region of the aluminum gallium nitride layer, and then the gate is formed at the position of the first dielectric layer above the active region of the aluminum gallium nitride layer. electrode metal layer, and then remove the photoresist and the gate metal layer outside the active area.
- the second dielectric layer is directly formed on the gate metal layer, and the second dielectric layer covers both the gate metal layer and the first dielectric layer.
- the first dielectric layer, the second dielectric layer, and the aluminum gallium nitride layer outside the area of the gate metal layer can be etched to obtain an etching hole, and the gallium nitride is exposed at the bottom of the etching hole layer, and then a second metal layer can be formed on the etching hole and the second dielectric layer, the polarity of the second metal layer and the gate metal layer are opposite, and the gate metal layer separated by the second dielectric layer and the second metal layer form a first capacitance, the first capacitance is an inter-plate capacitance, and when the voltage between the gate metal layer and the second metal layer is within a preset range, a two-dimensional electron gas is generated under the aluminum gallium nitride layer, The second metal layer is connected to the two-dimensional electron gas.
- the gate metal layer, the first dielectric layer and the two-dimensional electron gas together form a third capacitor.
- the first dielectric layer does not include P-type gallium nitride or P-type aluminum nitride. gallium, the third capacitor is the inter-board capacitor.
- the potential of the second metal layer is the same as that of the two-dimensional electron gas, so that both ends of the first capacitor and the second capacitor are interconnected, that is, the first capacitor and the second capacitor are connected in parallel.
- the two-dimensional electron gas is located between the aluminum nitride layer and the gallium nitride layer.
- the electron concentration of the two-dimensional electron gas can be increased.
- the gate metal layer, the first dielectric layer and the two-dimensional electron gas constitute the first capacitor
- the gate metal layer, the second dielectric layer and the second metal layer constitute the second capacitor
- the two-dimensional electron gas and the second The potential of the two metal layers is the same, so that the first capacitor and the second capacitor are connected in parallel, and there is no junction capacitance, so that the capacitance capacity of the integrated device is increased, and the withstand voltage of the integrated device is improved, which can not only increase the capacitance integration density of the integrated device, but also achieve high operating voltage.
- FIG. 15 is a schematic diagram of a possible structure of the driving circuit 150 provided by the embodiment of the present application.
- the drive circuit 150 includes a gate driver 1501 and an integrated device 1502, wherein the gate drive device 1501 may include multiple current sources, and one or more of the multiple current sources may be the gate metal in the integrated device 1502 layer provides current to change the voltage of the gate metal layer.
- the integrated device 1502 may be any one of the integrated devices shown in FIG. 2 , FIG. 5 , FIG. 7 and FIG. 9 .
- FIG. 16 is a schematic diagram of a possible structure of an electronic device 160 provided by an embodiment of the present application.
- the electronic device may be an adapter or a server.
- the adapter may include the drive circuit 150 shown in FIG. , any of the integrated devices in Figure 7 and Figure 9.
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Abstract
Description
Claims (27)
- 一种集成器件,其特征在于,包括:第一金属层;设于所述第一金属层之上的第一介质层;设于所述第一介质层之上的第二介质层;设于所述第一介质层与所述第二介质层之间的栅极金属层;以及,设于所述第二介质层之上的第二金属层;其中,所述第一金属层、所述第一介质层以及所述栅极金属层用于构成第一电容;所述第二金属层、所述第二介质层以及所述栅极金属层用于构成第二电容;所述第一金属层与所述第二金属层通过第一导体结构连接,以使得所述第一电容与所述第二电容并联连接。
- 根据权利要求1所述的集成器件,其特征在于,所述栅极金属层与所述第一金属层极性相反,所述第二金属层与所述栅极金属层极性相反。
- 根据权利要求1所述的集成器件,其特征在于,所述集成器件还包括第三金属层,设于所述第一金属层之下的P型导电层;设于所述P型导电层之下的氮化铝镓层;所述氮化铝镓层之下包括二维电子气;所述第一金属层、所述P型导电层以及所述二维电子气用于构成第三电容;所述第三金属层穿过所述第二介质层、所述第一介质层和所述氮化铝镓层,与所述二维电子气相接,所述第三金属层与所述栅极金属层通过第二导体结构连接,以使得所述第一电容、所述第二电容和所述第三电容并联连接。
- 根据权利要求3所述的集成器件,其特征在于,所述第三金属层与所述第一金属层极性相反。
- 根据权利要求3所述的集成器件,其特征在于,所述氮化铝镓层设置在氮化铝层之上,所述二维电子气位于所述氮化铝层之下。
- 根据权利要求1至5任一项所述的集成器件,其特征在于,所述P型导电层包括P型氮化镓或P型氮化铝镓。
- 根据权利要求1至5任一项所述的集成器件,其特征在于,所述第一金属层包括氮化钛或钨。
- 根据权利要求2至5任一项所述的集成器件,其特征在于,所述第一导体结构和所述第二导体结构的材料包括铜或铝。
- 一种集成器件,其特征在于,包括:氮化铝镓层;设于所述氮化铝镓层之上的第一介质层;设于所述第一介质层之上的第二介质层;设于所述第一介质层与所述第二介质层之间的栅极金属层;以及,设于所述第二介质层之上的第二金属层;其中,所述氮化铝镓层之下包括二维电子气;所述二维电子气、所述第一介质层以及所述栅极金属层用于构成第一电容;所述第二金属层、所述第二介质层以及所述栅极金属层用于构成第二电容;所述第二金属层穿过所述第二介质层、所述第一介质层和所述氮化铝镓层,与所述二维电子气相接,以使得所述第一电容与所述第二电容并联连接。
- 根据权利要求9所述的集成器件,其特征在于,所述第二金属层与所述栅极金属层极性相反。
- 根据权利要求9-10任一项所述的集成器件,其特征在于,所述第一介质层包括P型氮化镓或P型氮化铝镓,所述栅极金属层穿过所述第一介质层,并形成于所述P型氮化镓或所述P型氮化铝镓之上。
- 根据权利要求9-10任一项所述的集成器件,其特征在于,所述氮化铝镓层设置在氮化铝层之上,所述二维电子气位于所述氮化铝层之下。
- 一种半导体器件,其特征在于,包括权利要求1~12中任一项所述的集成器件,以及在所述集成器件上形成的半导体构成。
- 一种集成器件的制作方法,其特征在于,包括:在第一金属层上形成第一介质层;在所述第一介质层上形成栅极金属层;在所述栅极金属层上形成第二介质层;在所述第二介质层上形成第二金属层;其中,所述第一金属层、所述第一介质层以及所述栅极金属层用于构成第一电容;所述第二金属层、所述第二介质层以及所述栅极金属层用于构成第二电容;通过第一导体结构将所述第一金属层与所述第二金属层相连,以使得所述第一电容与所述第二电容并联连接。
- 根据权利要求14所述的集成器件的制作方法,其特征在于,所述栅极金属层与所述第一金属层极性相反,所述第二金属层与所述栅极金属层极性相反。
- 根据权利要求14所述的集成器件的制作方法,其特征在于,所述第一金属层形成于P型导电层之上,所述P型导电层形成于氮化铝镓层之上,所述氮化铝镓层之下包括二维电子气,所述第一金属层、所述P型导电层以及所述二维电子气用于构成第三电容;在所述第二介质层上形成第三金属层,所述第三金属层穿过所述第二介质层、所述第一介质层和所述氮化铝镓层,与所述二维电子气相接;通过第二导体结构将所述第三金属层与所述栅极金属层相连,以使得所述第一电容、所述第二电容和所述第三电容并联连接。
- 根据权利要求16所述的集成器件的制作方法,其特征在于,所述第三金属层与所述第一金属层极性相反。
- 根据权利要求16所述的集成器件的制作方法,其特征在于,所述氮化铝镓层形成于氮化铝层之上,所述二维电子气位于所述氮化铝层之下。
- 根据权利要求16至18任一项所述的集成器件的制作方法,其特征在于,所述P 型导电层包括P型氮化镓或P型氮化铝镓。
- 根据权利要求14至18任一项所述的集成器件的制作方法,其特征在于,所述第一金属层包括氮化钛或钨。
- 根据权利要求16至18任一项所述的集成器件的制作方法,其特征在于,所述第一导体结构和所述第二导体结构的材料包括铜或铝。
- 一种集成器件的制作方法,其特征在于,包括:在氮化铝镓层上形成第一介质层;在所述第一介质层上形成栅极金属层;在所述栅极金属层上形成第二介质层;在所述第二介质层上形成第二金属层;所述氮化铝镓层之下包括二维电子气,所述二维电子气、所述第一介质层以及所述栅极金属层用于构成第一电容;所述第二金属层、所述第二介质层以及所述栅极金属层用于构成第二电容;通过所述第二金属层穿过所述第二介质层、所述第一介质层和所述氮化铝镓层,与所述二维电子气相接,以使得所述第一电容与所述第二电容并联连接。
- 根据权利要求22所述的集成器件的制作方法,其特征在于,所述第二金属层与所述栅极金属层极性相反。
- 根据权利要求22所述的集成器件的制作方法,其特征在于,所述第一介质层包括P型氮化镓或P型氮化铝镓,所述栅极金属层穿过所述第一介质层,并形成于所述P型氮化镓或所述P型氮化铝镓之上。
- 根据权利要求22至24任一项所述的集成器件的制作方法,其特征在于,所述氮化铝镓层形成于氮化铝层之上,所述二维电子气位于所述氮化铝层之下。
- 一种驱动电路,其特征在于,包括:栅极驱动器和如权利要求1至12中任一项所述的集成器件,或使用如权利要求14至25任一项所述的集成器件的制作方法所得到的集成器件;其中:所述栅极驱动器用于为所述集成器件提供电流。
- 一种电子设备,其特征在于,包括如权利要求1至12中任一项所述的集成器件,或使用如权利要求14至25任一项所述的集成器件的制作方法所得到的集成器件。
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US20090057828A1 (en) * | 2007-08-29 | 2009-03-05 | Myung-Il Kang | Metal-insulator-metal capacitor and method for manufacturing the same |
CN103730450A (zh) * | 2013-11-22 | 2014-04-16 | 上海和辉光电有限公司 | 有机电激发光二极体储存电容结构及其制备方法 |
CN104536223A (zh) * | 2014-12-30 | 2015-04-22 | 深圳市华星光电技术有限公司 | 液晶显示面板及其阵列基板 |
CN104795428A (zh) * | 2015-04-10 | 2015-07-22 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法以及显示装置 |
CN111344774A (zh) * | 2017-11-21 | 2020-06-26 | 索尼半导体解决方案公司 | 像素电路、显示装置和电子设备 |
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US20090057828A1 (en) * | 2007-08-29 | 2009-03-05 | Myung-Il Kang | Metal-insulator-metal capacitor and method for manufacturing the same |
CN103730450A (zh) * | 2013-11-22 | 2014-04-16 | 上海和辉光电有限公司 | 有机电激发光二极体储存电容结构及其制备方法 |
CN104536223A (zh) * | 2014-12-30 | 2015-04-22 | 深圳市华星光电技术有限公司 | 液晶显示面板及其阵列基板 |
CN104795428A (zh) * | 2015-04-10 | 2015-07-22 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法以及显示装置 |
CN111344774A (zh) * | 2017-11-21 | 2020-06-26 | 索尼半导体解决方案公司 | 像素电路、显示装置和电子设备 |
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