WO2022247033A1 - 紫外led器件及其制备方法 - Google Patents

紫外led器件及其制备方法 Download PDF

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Publication number
WO2022247033A1
WO2022247033A1 PCT/CN2021/115041 CN2021115041W WO2022247033A1 WO 2022247033 A1 WO2022247033 A1 WO 2022247033A1 CN 2021115041 W CN2021115041 W CN 2021115041W WO 2022247033 A1 WO2022247033 A1 WO 2022247033A1
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WIPO (PCT)
Prior art keywords
hole
led device
lens
ultraviolet led
substrate
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PCT/CN2021/115041
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English (en)
French (fr)
Inventor
梁平霞
谢志国
李玉容
曾子恒
赵森
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佛山市国星光电股份有限公司
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Publication of WO2022247033A1 publication Critical patent/WO2022247033A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Definitions

  • the present application relates to the technical field of LEDs, for example, to an ultraviolet light-emitting diode (Light-Emitting Diode, LED) device and a preparation method thereof.
  • LED Light-Emitting Diode
  • the packaging methods There are two mainstream packaging methods for ultraviolet LED devices. One is to package ceramic substrates with cups with quartz glass, and the other is to package ceramic substrates with cups with silicone resin.
  • the chip and the quartz glass are filled with air or vacuumized, and a relatively high proportion of ultraviolet (UV) energy cannot be emitted through the air and the quartz glass, resulting in low light extraction efficiency of the packaged device ;
  • the silicone resin is a thermosetting polysiloxane polymer with a highly cross-linked structure, and its UV resistance is poor, and UV irradiation will accelerate damage
  • the molecular structure of silicone resin causes cracking and discoloration of silicone resin, which leads to problems such as poor air tightness and low lifespan of UV LED devices.
  • the application provides an ultraviolet LED device, which has high light extraction efficiency and long service life.
  • the present application also provides a method for preparing an ultraviolet LED device, which has higher production efficiency.
  • An ultraviolet LED device comprising a bracket and a lens, the bracket is provided with a housing cavity, the lens is set to block the housing cavity, the bottom of the housing cavity is provided with a chip, and the housing cavity is filled with There is a silicon-oxygen (Silicon-Oxygen, Si-O) main chain polymer, at least one through hole is provided on the support, the through hole is located at the bottom of the support, and the through hole communicates with the accommodation cavity, The through hole is spaced from the chip, and a sealing member is arranged in the through hole.
  • Si-Oxygen Si-O
  • two through holes are arranged at intervals at the bottom of the bracket.
  • the sealing member is made of metal material; or, the sealing member is made of resin.
  • the sealing part is a silver paste part.
  • a protective layer is arranged on the side of the chip close to the lens, and the protective layer is arranged to space the chip from the Si-O main chain polymer.
  • the protective layer is made of fluororesin.
  • the side of the protective layer close to the lens has a curved or spherical surface, and the curved surface or the spherical surface is convex toward the side of the lens.
  • the through hole is spaced apart from the protective layer.
  • the support includes a substrate and an annular dam, the lens is connected to the dam, and the accommodation cavity is formed between the substrate, the dam and the lens , the chip is fixed on the substrate, pins are provided on a side of the substrate away from the accommodating cavity, the through holes are provided on the substrate, and the through holes pass through the pins.
  • the support includes a substrate and an annular dam, the lens is connected to the dam, and the accommodation cavity is formed between the substrate, the dam and the lens , the chip is fixed on the substrate, the through hole is disposed on the substrate, pins are disposed on a side of the substrate away from the accommodating cavity, and the through hole is spaced from the pins.
  • a method for preparing an ultraviolet LED device is also provided, which is used to prepare the above-mentioned ultraviolet LED device, including:
  • the through hole is blocked with a sealing member.
  • a protective layer is coated on the surface of the chip.
  • the sealing member is a silver paste member; the sealing member is used to seal the through hole, including:
  • the through hole is subjected to high temperature treatment to harden the silver paste to form a silver paste part.
  • two through holes are provided at the bottom of the support; the Si-O main chain polymer is filled into the accommodation cavity through the through holes; After the -O main chain polymer is completed, use a seal to block the through hole, including:
  • Fig. 1 is the schematic diagram of a kind of ultraviolet LED device that the embodiment of the present application provides;
  • Fig. 2 is the schematic diagram of another kind of ultraviolet LED device that the embodiment of the present application provides;
  • Fig. 3 is the schematic diagram of another kind of ultraviolet LED device that the embodiment of the present application provides;
  • Fig. 4 is the schematic diagram of another kind of ultraviolet LED device that the embodiment of the present application provides;
  • FIG. 5 is a schematic top view of a bracket provided in an embodiment of the present application.
  • FIG. 6 is a schematic top view of another bracket provided in the embodiment of the present application.
  • FIG. 7 is a schematic bottom view of a bracket provided in an embodiment of the present application.
  • Fig. 8 is a schematic bottom view of another bracket provided by the embodiment of the present application.
  • Fig. 9 is a schematic bottom view of another bracket provided by the embodiment of the present application.
  • Fig. 10 is a schematic bottom view of another bracket provided by the embodiment of the present application.
  • an ultraviolet LED device (hereinafter referred to as LED device) provided by the present application includes a bracket and a lens 1, the bracket is provided with a housing cavity, the lens 1 blocks the housing cavity, and the housing cavity
  • the bottom of the cavity is provided with a chip 4, and the cavity is also filled with a Si-O main chain polymer.
  • the support is provided with at least one through hole 303, and the through hole 303 is located at the bottom of the support.
  • the through hole 303 communicates with the cavity, and the through hole 303 is spaced from the chip 4 , and a sealing member 5 is arranged in the through hole 303 .
  • Si-O main chain polymer Filling the cavity with Si-O main chain polymer can increase the refractive index of light, thereby improving the light extraction efficiency of LED devices; the performance of Si-O main chain polymer is stable, therefore, the Si-O main chain polymer The setting will not affect other structures of the LED device, which ensures the stability of the LED device; the Si-O main chain polymer has better radiation resistance, and under long-term ultraviolet irradiation, the Si-O main chain polymer It can still maintain its molecular structure, so LED devices filled with Si-O backbone polymers have a longer working life.
  • the Si-O main chain polymer is silicone oil 6.
  • Silicone oil usually refers to a linear polysiloxane product that maintains a liquid state at room temperature, and is generally divided into two types: methyl silicone oil and modified silicone oil. Among them, methyl silicone oil is also called ordinary silicone oil, and its organic groups are all methyl groups. Methyl silicone oil has good chemical stability, insulation, and good hydrophobicity. Silicone oil is a colorless (or light yellow), odorless, non-toxic, non-volatile liquid.
  • Silicone oil is insoluble in water, methanol, ethylene glycol and 2-ethoxyethanol, miscible with benzene, dimethyl ether, methyl ethyl ketone, carbon tetrachloride or kerosene, slightly soluble in acetone, dioxane, ethanol and butanol. Silicone oil has a small vapor pressure, high flash point and fire point, and low freezing point. Silicone oil has heat resistance, electrical insulation, weather resistance, hydrophobicity, physiological inertia and small surface tension. In addition, it also has low viscosity-temperature coefficient and high compression resistance. Some types of silicone oil also have resistance radiation properties.
  • the silicone oil 6 is a liquid substance, when the front injection method is used for filling, the gas in the accommodating cavity cannot be completely discharged, and the surface of the silicone oil 6 is likely to form irregular concave surfaces, resulting in inconsistent light output performance of the LED device at multiple angles, reducing the Its light extraction efficiency; if the filling amount of silicone oil 6 is increased, too much silicone oil 6 will easily overflow from the connection between the lens 1 and the bracket, reducing the sealing performance of the LED device; due to the high hardness of the lens 1, the It is difficult to open holes, and the thickness of the lens 1 is relatively thin, so the silicone oil 6 cannot be effectively sealed.
  • through holes 303 are provided on the bracket, so that the silicone oil 6 can be filled from the back of the LED device.
  • the back filling method can completely discharge the air in the accommodation cavity of the bracket, so that the accommodation cavity can be completely filled with silicone oil 6, and then The uniformity of the light output of the LED device is better, and the holes are opened on the back side, the operation process is simple, the batch production is easy to realize, and the production efficiency is effectively improved.
  • the side of the chip 4 close to the lens 1 is provided with a protective layer 7 , and the protective layer 7 separates the chip 4 from the silicone oil 6 .
  • Both the protective layer 7 and the support seal the chip 4 together.
  • the protective layer 7 can reduce the impact of the flowing silicone oil 6 on the chip 4 and improve the reliability of the chip 4.
  • the protective layer 7 can prevent water vapor and other impurities from penetrating into the chip 4, ensuring the normal operation of the LED device.
  • the protective layer 7 is made of fluororesin, and the protective layer 7 may also be made of other fluoride materials.
  • Fluorine resin is a kind of thermoplastic resin containing fluorine atoms in its molecular structure. It has excellent high and low temperature resistance, dielectric properties, chemical stability, weather resistance, non-combustibility, non-stickiness and low friction coefficient.
  • fluorine resin polytetrafluoroethylene (Poly Tetra Fluoro Ethylene, PTFE), polychlorotrifluoroethylene (Poly Chloro Tri Fluro Ethylene PCTFE), polyvinylidene fluoride (Poly (Vinyli Dene Fluoride), PVDF), vinyl- Tetrafluoroethylene copolymer (Ethylene Tetra Fluoro Ethylene, ETFE), ethylene-chlorotrifluoroethylene copolymer (Ethylene Chloro Tri Fluoro Ethylene copolymer, ECTFE), polyvinyl fluoride (Poly(Vinyl Fluoride), PVF), etc.
  • the high temperature resistance of fluororesin after hardening is better, and both fluororesin and silicone oil 6 have better anti-ultraviolet performance, and their chemical properties are stable.
  • the protective layer 7 made of fluororesin the light extraction efficiency of LED devices can be increased by 10%- 15%, therefore, setting the protective layer 7 made of fluororesin and the silicone oil 6 can improve the light emitting effect of the LED device.
  • the side of the protective layer 7 close to the lens 1 is a curved surface, and the curved surface of the protective layer 7 is convex toward the side of the lens 1.
  • the side of the protective layer 7 near the lens 1 can also be spherical.
  • the spherical surface of the protective layer 7 faces One side of the lens 1 is convex.
  • the protective layer 7 with a curved or spherical surface can act as a convex lens, therefore, the protective layer 7 can refract the light emitted by the chip 4, thereby improving the light extraction efficiency of the LED device.
  • a sealing member 5 is arranged in the through hole 303, and the sealing member 5 is made of a metal material.
  • the sealing member 5 made of a metal material has excellent thermal conductivity, and its thermal conductivity is greater than that of the bracket. When in use, the heat of the chip 4 can be transferred from the bracket To the seal, this can improve the heat dissipation effect of the LED device.
  • the sealing member 5 is a silver paste, and the silver paste is a viscous state of a mechanical mixture composed of high-purity (99.9%) metallic silver particles, adhesives, solvents, and additives. of slurry.
  • the sealing member 5 made of silver paste has good thermal conductivity, and the heat generated by the chip 4 can be transferred to the sealing member 5 through the bracket, which is helpful for heat dissipation of the LED device and prolongs the working life of the LED device.
  • the sealing member 5 needs to be chemically stable and capable of fast curing at high temperature. At the same time, the sealing member 5 cannot chemically react with the silicone oil 6. Therefore, the sealing member 5 can also be made of resin.
  • the bracket includes a substrate 3 and an annular dam 2, the lens 1 is connected to the dam 2, an accommodation cavity is formed between the substrate 3, the dam 2 and the lens 1, and the chip 4 is fixed on the substrate 3 , the through hole 303 is disposed on the substrate 3 , the pin 302 is disposed on a side of the substrate 3 away from the containing cavity, and the pad 301 is disposed on a side of the substrate 3 close to the containing cavity.
  • the thermal expansion coefficient of the substrate 3 is (2.0-6.0) ⁇ 10 -6 /K
  • the thermal expansion coefficient of the sealing member 5 needs to be greater than that of the substrate 3 to ensure that the sealing member 5 can It is firmly fixed in the through hole 303 to ensure the sealing of the LED device; for example, the thermal expansion coefficient of the sealing member 5 is (30-200) ⁇ 10 ⁇ 6 /K.
  • the through hole 303 is spaced from the protective layer 7 , which can reduce the impact on the structure of the protective layer 7 and ensure the protective effect of the protective layer 7 on the chip 4 .
  • the through hole 303 runs through the pin 302. Since the sealing member is a silver paste, the sealing member configured to block the through hole 303 can be in contact with the pin 302, and the chip 4 produces The heat can be quickly transferred to the pin 302 to improve the heat dissipation performance of the LED device; after the LED device is processed, it is necessary to solder the pin 302 on the substrate 3 and the external circuit. Solder paste is generally used as a flux during soldering.
  • the through hole 303 is arranged on the pin 302, and the solder paste can perform secondary sealing on the through hole 303 during soldering, so as to ensure the airtightness of the LED device.
  • the lens 1 is made of quartz glass
  • the substrate 3 is made of ceramics
  • the outer surface of the substrate 3 needs to be provided with a metal layer.
  • the substrate 3 can be drilled first to form a through hole 303, and then the substrate 3 can be metal-plated to form a metal layer.
  • the through hole 303 penetrates the pin 302
  • the through The holes 303 are arranged outside the pins 302 , which can reduce the difficulty of processing the substrate 3 , improve the processing efficiency of the substrate 3 , and facilitate the mass production of the substrate 3 .
  • a through hole 303 is provided on the substrate 3, referring to Fig. 5, Fig. 6, Fig. 7 and Fig. 8, in another embodiment, the substrate 3 is provided with two through holes 303, the distance between the two through holes 303 can be designed according to the size of the LED device, and the opening position of the through hole 303 is selected according to the requirements of the LED device.
  • the substrate 3 is provided with three pins 302 and two any pad 301, the through hole 303 can selectively pass through any pad 301 or pin 302.
  • the substrate 3 is quadrilateral, and the two through holes 303 are located at two opposite corner regions of the substrate 3 respectively, and the through holes 303 are spaced from the pins 302, so that the substrate 3 can be directly opened, Reduce the processing difficulty of the through hole 303, the diameter of the through hole 303 can be designed according to the actual needs of the LED device; in addition, the through hole 303 is arranged in two opposite corner regions of the substrate 3, and is located outside the pin 302, can The influence of the through hole 303 on the patch of the LED device is reduced.
  • the diameter of the through hole 303 is 1/4 to 1/2 of the width of the pad 301, which can ensure that the pad 301 has enough area to be welded with the chip 4.
  • the diameter of the through hole 303 is 0.3mm.
  • the shape of the cross section of the through hole 303 can be designed according to the needs of the product, for example, the cross section of the through hole 303 can be circular, triangular or other polygons.
  • the cross-section of the through hole 303 is circular, which can reduce the processing difficulty of the through hole 303 and improve the processing efficiency of the substrate 3 .
  • the present application also provides a method for preparing an ultraviolet LED device, which is used to prepare the above-mentioned LED device, comprising the following steps:
  • a drilling tool to process the bottom of the bracket to form a through hole 303, wherein the through hole 303 communicates with the accommodation cavity on the bracket; weld the chip 4 to the bottom of the accommodation cavity; fix the lens 1 on the welded bracket, Wherein, the lens 1 is set to block the accommodating cavity; the fixed stent is turned upside down so that the through hole 303 faces upward, and the Si-O main chain polymer is filled into the accommodating cavity through the through hole 303; After the material is finished, the through hole 303 is blocked with a sealing member 5 .
  • the drilling process is set before the chip 4 welding process, which can not only reduce the difficulty of forming the through hole 303, but also avoid the impact of the drilling operation on the connection stability between the chip 4 and the substrate 3; fill the inverted bracket with silicone oil 6, The difficulty of filling can be reduced.
  • the through hole 303 faces upward, which is beneficial to the discharge of the gas inside the cavity.
  • the substrate 3 is provided with two through holes 303, through which one of the through holes 303 is filled with silicone oil 6 into the accommodating cavity, and the other through hole 303 acts as an air outlet, when the silicon oil 6 overflows or is about to overflow from the through hole 303 serving as an air outlet , stop filling the silicone oil 6, and then use two seals 5 to seal the two through holes 303 respectively.
  • One of the through holes 303 is set as an air outlet, which is conducive to the discharge of gas in the housing cavity during filling operations, so that the silicone oil 6 can fill the housing cavity and improve the light extraction efficiency; Liquid and gas flow in a specific direction, which is beneficial to improve the filling efficiency of the containing cavity.
  • the diameters of the two through holes 303 can be different, and the diameter of the through hole 303 configured to be filled with the silicone oil 6 can be larger than the diameter of the through hole 303 used as an air outlet, which can reduce the difficulty of filling the silicone oil 6 and improve the efficiency of the filling operation.
  • the protective layer 7 is coated on the surface of the chip 4. Since the protective layer 7 has a protective effect on the chip 4, it needs to fully cover the chip 4. Therefore, in The coating operation is performed before the bracket and the lens 1 are fixed, which can reduce the operational difficulty of the coating operation and facilitate the formation of the protective layer 7 .
  • bracket and lens 1 The fixing steps of bracket and lens 1 include:
  • the sealing member 5 is a silver paste member, and the sealing member 5 is used to seal the through hole 303, including:
  • the silver paste is filled into the through hole 303, and after the silver paste is filled, the through hole 303 is subjected to high temperature treatment to harden the silver paste to form a silver paste piece.
  • the liquid silver paste is hardened at high temperature in the through hole 303 to form a silver paste piece, which can ensure the sealing effect of the sealing member 5 on the LED device, thereby improving the working life of the LED device.
  • the silicone oil 6 also fills the through hole 303, which is conducive to completely exhausting the gas in the housing cavity, and avoiding the residual air in the housing cavity to form an irregular concave surface on the surface of the silicone oil 6 and affect the light output effect of the LED device. ;
  • the through hole 303 is filled with too much silicone oil 6, the volume of the sealing member 5 will be reduced, which will not only reduce the heat dissipation performance of the LED device, is not conducive to the heat dissipation of the chip 4, but also reduces the sealing effect of the LED device. Therefore, the silicone oil 6
  • the filling depth in the through hole 303 is one-fifth to one-fourth of the depth of the through hole 303 .

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本文公开一种紫外LED器件及其制备方法。紫外LED器件包括支架和透镜，所述支架上设置有容纳腔，所述透镜设置为封堵所述容纳腔，所述容纳腔的腔底设置有芯片，所述容纳腔内填充有Si-O主链聚合物，所述支架上设置有至少一个通孔，所述通孔位于所述支架的底部，所述通孔与所述容纳腔连通，所述通孔内设置有密封件。

Description

紫外LED器件及其制备方法
本申请要求在2021年05月25日提交中国专利局、申请号为202110573999.9的中国专利申请的优先权，该申请的全部内容通过引用结合在本申请中。
技术领域
本申请涉及LED技术领域，例如涉及一种紫外发光二极管(Light-Emitting Diode，LED)器件及其制备方法。
背景技术
紫外LED器件主流的封装方式有两种，其一是将带杯陶瓷基板搭配石英玻璃进行封装，其二是将带杯陶瓷基板搭配硅树脂进行封装。在第一种封装方式下，芯片和石英玻璃中间被空气填充或抽真空处理，较高比例的紫外线(Ultraviolet，UV)能量未能通过空气和石英玻璃发射出去，造成封装器件的出光效率较低；在第二种封装方式下，虽然在初期可大幅提升器件的辐射功率，但硅树脂是具有高度交联结构的热固性聚硅氧烷聚合物，其抗UV性能较差，UV照射会加速破坏硅树脂的分子结构，引起硅树脂开裂变色，导致紫外LED器件出现气密性较差、寿命较低等问题。
发明内容
本申请提供一种紫外LED器件，其出光效率较高，使用寿命较长。
本申请还提供一种紫外LED器件的制备方法，其具有较高的生产效率。
提供一种紫外LED器件，包括支架和透镜，所述支架上设置有容纳腔，所述透镜设置为封堵所述容纳腔，所述容纳腔的腔底设置有芯片，所述容纳腔内填充有硅氧(Silicon-Oxygen，Si-O)主链聚合物，所述支架上设置有至少一个通孔，所述通孔位于所述支架的底部，所述通孔与所述容纳腔连通，所述通孔与所述芯片间隔，所述通孔内设置有密封件。
作为紫外LED器件的一种方案，所述支架的底部间隔设置有两个通孔。
作为紫外LED器件的一种方案，所述密封件包含金属材质；或，所述密封件采用树脂制成。
作为紫外LED器件的一种方案，所述密封件为银浆件。
作为紫外LED器件的一种方案，所述芯片靠近所述透镜的一侧设置有保护 层，所述保护层设置为将所述芯片和所述Si-O主链聚合物间隔。
作为紫外LED器件的一种方案，所述保护层的材质为氟树脂。
作为紫外LED器件的一种方案，所述保护层靠近所述透镜的一侧呈弧面或球面，所述弧面或所述球面朝向所述透镜一侧凸起。
作为紫外LED器件的一种方案，所述通孔与所述保护层间隔设置。
作为紫外LED器件的一种方案，所述支架包括基板和环状的围坝，所述透镜与所述围坝连接，所述基板、所述围坝和所述透镜之间形成所述容纳腔，所述芯片固定在所述基板上，所述基板远离所述容纳腔的一侧面设置有引脚，所述通孔设置在所述基板上，所述通孔贯穿所述引脚。
作为紫外LED器件的一种方案，所述支架包括基板和环状的围坝，所述透镜与所述围坝连接，所述基板、所述围坝和所述透镜之间形成所述容纳腔，所述芯片固定在所述基板上，所述通孔设置在所述基板上，所述基板远离所述容纳腔的一侧面设置有引脚，所述通孔与所述引脚间隔。
还提供一种紫外LED器件制备方法，用于制备上述的紫外LED器件，包括：
使用钻孔工具对支架的底部进行加工形成通孔，其中，所述通孔与所述支架上的容纳腔连通；
将芯片焊接于所述容纳腔的腔底；
将透镜固定于焊接完成的所述支架上，其中，所述透镜设置为封堵所述容纳腔；
将固定完成的所述支架倒置，使所述通孔朝向上方，通过所述通孔向所述容纳腔内填充Si-O主链聚合物；
在填充所述Si-O主链聚合物完毕后，使用密封件将所述通孔封堵。
作为紫外LED器件制备方法的一种方案，在所述将透镜固定于焊接完成的所述支架上之前，还包括：
在所述芯片表面涂覆保护层。
作为紫外LED器件制备方法的一种方案，所述密封件为银浆件；所述使用密封件将所述通孔封堵，包括：
向所述通孔填充银浆，在填充所述银浆完毕后，对所述通孔进行高温处理，使所述银浆硬化形成银浆件。
作为紫外LED器件制备方法的一种方案，所述支架的底部设置有两个通孔；所述通过所述通孔向所述容纳腔内填充Si-O主链聚合物；在填充所述Si-O主链 聚合物完毕后，使用密封件将所述通孔封堵，包括：
通过所述两个通孔中一个通孔向所述容纳腔填充所述Si-O主链聚合物，将另一个通孔作为出气口，当所述Si-O主链聚合物从作为出气口的通孔处溢出或将要溢出时，停止填充所述Si-O主链聚合物，使用两个密封件分别对所述两个通孔进行封堵。
附图说明
图1为本申请实施例提供的一种紫外LED器件的示意图；
图2为本申请实施例提供的另一种紫外LED器件的示意图；
图3为本申请实施例提供的另一种紫外LED器件的示意图；
图4为本申请实施例提供的另一种紫外LED器件的示意图；
图5为本申请实施例提供的一种支架的俯视示意图；
图6为本申请实施例提供的另一种支架的俯视示意图；
图7为本申请实施例提供的一种支架的仰视示意图；
图8为本申请实施例提供的另一种支架的仰视示意图；
图9为本申请实施例提供的另一种支架的仰视示意图；
图10为本申请实施例提供的另一种支架的仰视示意图。
图中：
1、透镜；2、围坝；3、基板；301、焊盘；302、引脚；303、通孔；4、芯片；5、密封件；6、硅油；7、保护层。
具体实施方式
下面将结合附图对本申请实施例的技术方案进行描述。
如图1、图3和图5所示，本申请提供的一种紫外LED器件(以下简称LED器件)，包括支架和透镜1，支架上设置有容纳腔，透镜1封堵容纳腔，容纳腔的腔底设置有芯片4，容纳腔内还填充有Si-O主链聚合物，支架上设置有至少一个通孔303，通孔303位于支架的底部，通孔303和容纳腔连通，通孔303与芯片4间隔，通孔303内设置有密封件5。在容纳腔内填充Si-O主链聚合物，可以提高光线的折射率，进而提高了LED器件的出光效率；Si-O主链聚合物的性能稳定，因此，Si-O主链聚合物的设置不会对LED器件的其他结构造成影响，保证了LED器件的稳定性；Si-O主链聚合物具有较佳的抗辐射性能，在长时间 的紫外线照射下，Si-O主链聚合物仍能保持其分子结构，因此，填充有Si-O主链聚合物的LED器件具有较长的工作寿命。
在本实施例中，Si-O主链聚合物为硅油6，硅油通常指的是在室温下保持液体状态的线型聚硅氧烷产品，一般分为甲基硅油和改性硅油两类，其中，甲基硅油也称为普通硅油，其有机基团全部为甲基，甲基硅油具有良好的化学稳定性、绝缘性，其疏水性能好。硅油是无色(或淡黄色)、无味、无毒、不易挥发的液体。硅油不溶于水、甲醇、乙二醇和2-乙氧基乙醇，可与苯、二甲醚、甲基乙基酮、四氯化碳或煤油互溶，稍溶于丙酮、二恶烷、乙醇和丁醇。硅油具有很小的蒸汽压、较高的闪点和燃点、较低的凝固点。硅油具有耐热性、电绝缘性、耐候性、疏水性、生理惰性和较小的表面张力，此外还具有低的粘温系数、较高的抗压缩性的性能，部分种类的硅油还具有耐辐射的性能。
由于硅油6为液态物质，当采用正面注射方式进行填充时，无法将容纳腔内的气体完全排出，硅油6的表面容易形成不规则的凹面，导致LED器件在多个角度的出光性能不一致，降低其出光效率；若增加硅油6的填充量，过多的硅油6容易从透镜1和支架的连接处溢出，降低了LED器件的密封性能；由于透镜1的硬度较高，因此，透镜1处的开孔难度较大，且透镜1的厚度较薄，无法有效地将硅油6进行密封。本实施例通过在支架上设置通孔303，使得可以从LED器件的背面填充硅油6，背面填充方式可以将支架的容纳腔内的空气彻底排出，使容纳腔内能够完全填充满硅油6，进而使LED器件的出光一致性较好，而且背面开孔，操作工艺简单，容易实现批量化生产，有效地提升生产效率。
参照图2和图4，芯片4靠近透镜1的一侧设置有保护层7，保护层7将芯片4和硅油6间隔。保护层7和支架两者共同对芯片4实现密封，在进行硅油6填充作业时，保护层7可以减少流动的硅油6对芯片4造成的冲击，提高芯片4的可靠性，填充硅油6完毕后，保护层7可以避免水汽等杂质渗入芯片4内部，保证了LED器件的正常工作。
在本实施例中，保护层7的材质为氟树脂，保护层7也可以由其他氟化物材料制成。氟树脂是一种分子结构中含有氟原子的一类热塑性树脂，其具有优异的耐高低温性能、介电性能、化学稳定性、耐候性、不燃性、不粘性和低的摩擦系数等特性。氟树脂的主要品种有聚四氟乙烯(Poly Tetra Fluoro Ethylene，PTFE)、聚三氟氯乙烯(Poly Chloro Tri Fluro Ethylene PCTFE)、聚偏氟乙烯(Poly(Vinyli Dene Fluoride)，PVDF)、乙烯-四氟乙烯共聚物(Ethylene Tetra Fluoro Ethylene，ETFE)、乙烯-三氟氯乙烯共聚物(Ethylene Chloro Tri Fluoro Ethylene copolymer，ECTFE)、聚氟乙烯(Poly(Vinyl Fluoride)，PVF)等。
氟树脂硬化后的耐高温性能较好，且氟树脂和硅油6两者的抗紫外性能较好，且化学性质稳定，通过设置氟树脂材质的保护层7，LED器件的出光效率提升10％-15％，因此，设置氟树脂材质的保护层7和硅油6，可以提升LED器件的出光效果。
保护层7靠近透镜1的一侧呈弧面，保护层7的弧面朝向透镜1一侧凸起，保护层7靠近透镜1的一侧也可以呈球面，相应地，保护层7的球面朝向透镜1的一侧凸起。具有弧面或球面的保护层7可以充当凸透镜，因此，保护层7可以对芯片4发出的光线进行折射，提升了LED器件的出光效率。
通孔303内设置有密封件5，密封件5包含金属材质，包含金属材质的密封件5具有优良的导热性能，其导热系数大于支架的导热系数，使用时，芯片4的热量可以从支架传递到密封件上，这样可以提高LED器件的散热效果。
在本实施例中，密封件5为银浆件，银浆是由高纯度(99.9％)的金属银的微粒、粘合剂、溶剂、助剂所组成的一种机械混和物的粘稠状的浆料。银浆制成的密封件5具有良好的导热性，芯片4产生的热量可以通过支架传递到密封件5，有助于LED器件的散热，延长了LED器件的工作寿命。
密封件5需要具有化学性质稳定、高温下可快速固化的能力，同时，密封件5不能与硅油6发生化学反应，因此，密封件5也可以是树脂材质。
在本实施例中，支架包括基板3和环状的围坝2，透镜1与围坝2连接，基板3、围坝2和透镜1三者之间形成容纳腔，芯片4固定在基板3上，通孔303设置在基板3上，基板3远离容纳腔的一侧面设置有引脚302，基板3靠近容纳腔的一侧面设置有焊盘301。
在本实施例中，基板3的热膨胀系数为(2.0-6.0)×10 -6/K，密封件5的热膨胀系数需要大于基板3的膨胀系数，以保证LED器件使用过程中，密封件5可以被牢牢固定在通孔303内，保证LED器件的密封性；例如，密封件5的热膨胀系数为(30-200)×10 -6/K。
通孔303与保护层7间隔设置，这样可以减少对保护层7结构的影响，保证保护层7对芯片4的保护作用。
一实施例中，参照图8和图9，通孔303贯穿引脚302，由于密封件为银浆件，因此，设置为封堵通孔303的密封件可以与引脚302接触，芯片4产生的热量可以快速传递到引脚302上，提高LED器件的散热性能；LED器件加工完成后，需要将基板3上的引脚302和外部电路进行焊接，焊接时一般使用锡膏作助焊剂，将通孔303设置在引脚302上，焊接时，锡膏可以对通孔303进行二次密封，保证了LED器件的气密性。
另一实施例中，透镜1的材质为石英玻璃，基板3的材质为陶瓷，基板3的外表面需要设置金属层，参照图7和图10，通孔303设置在引脚302外。在对基板3进行加工时，可以先对基板3进行钻孔加工形成通孔303，然后再对基板3进行镀金属加工形成金属层，相比于通孔303贯穿引脚302的结构，将通孔303设置在引脚302外，可以降低对基板3加工的工艺难度，提高基板3的加工效率，有利于基板3的批量化生产。
参照图9和图10，一实施例中，基板3上设置有一个通孔303，参照图5、图6、图7和图8，另一实施例中，基板3上设置有两个通孔303，两个通孔303之间的距离可以根据LED器件的尺寸进行设计，通孔303的开设位置根据LED器件的需求进行选择，在本实施例中，基板3设置有三个引脚302和两个焊盘301，通孔303可以选择性贯穿任意焊盘301或引脚302。
参照图7，本实施例中基板3呈四边形，两个通孔303分别位于基板3的两个相对的角区域，通孔303均与引脚302间隔，这样可以直接对基板3进行开孔，降低通孔303的加工难度，通孔303的直径可以根据LED器件的实际需求进行设计；此外，将通孔303设置在基板3的两个相对的角区域内，且位于引脚302外，可以降低通孔303对LED器件贴片的影响。
当通孔303贯穿焊盘301时，通孔303的直径为焊盘301宽度的1/4至1/2，这样可以保证焊盘301具有足够的面积与芯片4焊接，在本实施例中，通孔303的直径为0.3mm，参照图5和图6，通孔303截面的形状可以根据产品需要设计，例如，通孔303截面可以是圆形、三角形或者是其他多边形，本实施例中的通孔303截面呈圆形，这样可以降低通孔303的加工难度，提高基板3的加工效率。
本申请还提供了一种紫外LED器件的制备方法，用于制备上述的LED器件，包括以下步骤：
使用钻孔工具对支架的底部进行加工形成通孔303，其中，通孔303与支架上的容纳腔连通；将芯片4焊接于容纳腔的腔底；将透镜1固定于焊接完成的支架上，其中，透镜1设置为封堵容纳腔；将固定完成的支架倒置，使通孔303朝向上方，通过通孔303向容纳腔内填充Si-O主链聚合物；在填充Si-O主链聚合物完毕后，使用密封件5将通孔303封堵。
先使用钻孔工具对支架的基板3进行加工形成通孔303，然后对芯片4和基板3进行焊接，将焊接完成的支架和透镜1进行固定，之后将固定完成的支架倒置，使通孔303朝向上方，通过通孔303向容纳腔填充硅油6，填充硅油6完毕后，使用密封件5对通孔303进行封堵。
钻孔加工工序设置在芯片4焊接工序之前，不仅可以降低通孔303的成型难度，还可以避免钻孔作业对芯片4和基板3的连接稳定性造成的影响；对倒置支架进行硅油6填充，可以降低填充的难度，填充硅油6时，通孔303朝向上方，有利于容纳腔内部气体的排出。
基板3上设置有两个通孔303，通过其中一个通孔303向容纳腔填充硅油6，另一个通孔303充当出气口，当硅油6从充当出气口的通孔303处溢出或将要溢出时，停止填充硅油6，然后使用两个密封件5分别对两个通孔303进行封堵。将其中一个通孔303设置为出气口，有利于填充作业时容纳腔内气体的排出，使硅油6可以充满容纳腔，提高出光效率；其次，两个通孔303的设置有助于容纳腔内液体和气体进行特定方向的流动，有利于提高容纳腔的填充效率。
两个通孔303的直径可以是不同的，设置为填充硅油6的通孔303直径可以大于充当出气口的通孔303直径，这样可以降低硅油6的填充难度，提高填充作业效率。
芯片4和基板3焊接完成后，支架和透镜1固定之前，在芯片4表面涂覆保护层7，由于保护层7具有对芯片4的保护作用，其需要对芯片4进行全覆盖，因此，在支架和透镜1固定之前进行涂覆作业，可以降低涂覆作业的操作难度，有利于保护层7的成型。
支架和透镜1的固定步骤包括：
在支架的围坝2远离基板3的侧面点封装胶，然后将透镜1和围坝2进行贴合。
在本实施例中，密封件5为银浆件，使用密封件5对通孔303进行封堵，包括：
向通孔303填充银浆，在填充银浆完毕后，对通孔303进行高温处理，使银浆硬化形成银浆件。
使液体的银浆在通孔303内高温硬化形成银浆件，可以保证密封件5对LED器件的密封效果，进而提高LED器件的工作寿命。
在本实施例中，硅油6也对通孔303进行填充，这样有利于将容纳腔内的气体彻底排出，避免容纳腔内有空气残留使硅油6表面形成不规则的凹面影响LED器件的出光效果；当通孔303内填充硅油6过多时，会减小密封件5的体积，这样不仅会降低LED器件的散热性能，不利于芯片4散热，还会降低LED器件的密封效果，因此，硅油6在通孔303内的填充深度为通孔303深度的五分之一至四分之一。

Claims (14)

  1. 一种紫外发光二极管LED器件，包括支架和透镜，所述支架上设置有容纳腔，所述透镜设置为封堵所述容纳腔，所述容纳腔的腔底设置有芯片，其中，所述容纳腔内填充有硅氧Si-O主链聚合物，所述支架上设置有至少一个通孔，所述通孔位于所述支架的底部，所述通孔与所述容纳腔连通，所述通孔与所述芯片间隔，所述通孔内设置有密封件。
  2. 根据权利要求1所述的紫外LED器件，其中，所述支架的底部间隔设置有两个通孔。
  3. 根据权利要求2所述的紫外LED器件，其中，所述密封件包含金属材质；或，所述密封件采用树脂制成。
  4. 根据权利要求3所述的紫外LED器件，其中，所述密封件为银浆件。
  5. 根据权利要求1所述的紫外LED器件，其中，所述芯片靠近所述透镜的一侧设置有保护层，所述保护层设置为将所述芯片和所述Si-O主链聚合物间隔。
  6. 根据权利要求5所述的紫外LED器件，其中，所述保护层的材质为氟树脂。
  7. 根据权利要求5所述的紫外LED器件，其中，所述保护层靠近所述透镜的一侧呈弧面或球面，所述弧面或所述球面朝向所述透镜一侧凸起。
  8. 根据权利要求5所述的紫外LED器件，其中，所述通孔与所述保护层间隔设置。
  9. 根据权利要求1所述的紫外LED器件，其中，所述支架包括基板和环状的围坝，所述透镜与所述围坝连接，所述基板、所述围坝和所述透镜之间形成所述容纳腔，所述芯片固定在所述基板上，所述基板远离所述容纳腔的一侧面设置有引脚，所述通孔设置在所述基板上，所述通孔贯穿所述引脚。
  10. 根据权利要求1所述的紫外LED器件，其中，所述支架包括基板和环状的围坝，所述透镜与所述围坝连接，所述基板、所述围坝和所述透镜之间形成所述容纳腔，所述芯片固定在所述基板上，所述通孔设置在所述基板上，所述基板远离所述容纳腔的一侧面设置有引脚，所述通孔与所述引脚间隔。
  11. 一种紫外发光二极管LED器件制备方法，用于制备如权利要求1-10任意一项所述的紫外LED器件，包括：
    使用钻孔工具对支架的底部进行加工形成通孔，其中，所述通孔与所述支架上的容纳腔连通；
    将芯片焊接于所述容纳腔的腔底；
    将透镜固定于焊接完成的所述支架上，其中，所述透镜设置为封堵所述容 纳腔；
    将固定完成的所述支架倒置，使所述通孔朝向上方，通过所述通孔向所述容纳腔内填充硅氧Si-O主链聚合物；
    在填充所述Si-O主链聚合物完毕后，使用密封件将所述通孔封堵。
  12. 根据权利要求11所述的紫外LED器件制备方法，在所述将透镜固定于焊接完成的所述支架上之前，还包括：
    在所述芯片表面涂覆保护层。
  13. 根据权利要求11所述的紫外LED器件制备方法，其中，所述密封件为银浆件；所述使用密封件将所述通孔封堵，包括：
    向所述通孔填充银浆，在填充所述银浆完毕后，对所述通孔进行高温处理，使所述银浆硬化形成银浆件。
  14. 根据权利要求11所述的紫外LED器件制备方法，其中，所述支架的底部设置有两个通孔；所述通过所述通孔向所述容纳腔内填充Si-O主链聚合物；在填充所述Si-O主链聚合物完毕后，使用密封件将所述通孔封堵，包括：
    通过所述两个通孔中的一个通孔向所述容纳腔填充所述Si-O主链聚合物，将另一个通孔作为出气口，在所述Si-O主链聚合物从作为出气口的通孔处溢出或将要溢出的情况下，停止填充所述Si-O主链聚合物，使用两个密封件分别对所述两个通孔进行封堵。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011096793A (ja) * 2009-10-29 2011-05-12 Nichia Corp 発光装置
EP2944327A1 (en) * 2013-01-10 2015-11-18 Shikoku Kakoki Co.,Ltd. Ultraviolet sterilizer
CN110752282A (zh) * 2019-11-29 2020-02-04 华引芯（武汉）科技有限公司 一种具有高光效和高可靠性的uv led器件及其制备方法
CN211605189U (zh) * 2020-04-30 2020-09-29 厦门市信达光电科技有限公司 一种紫外led封装结构
CN111816745A (zh) * 2020-07-27 2020-10-23 江西新正耀光学研究院有限公司 一种紫外光发光二极体元件结构及制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011096793A (ja) * 2009-10-29 2011-05-12 Nichia Corp 発光装置
EP2944327A1 (en) * 2013-01-10 2015-11-18 Shikoku Kakoki Co.,Ltd. Ultraviolet sterilizer
CN110752282A (zh) * 2019-11-29 2020-02-04 华引芯（武汉）科技有限公司 一种具有高光效和高可靠性的uv led器件及其制备方法
CN211605189U (zh) * 2020-04-30 2020-09-29 厦门市信达光电科技有限公司 一种紫外led封装结构
CN111816745A (zh) * 2020-07-27 2020-10-23 江西新正耀光学研究院有限公司 一种紫外光发光二极体元件结构及制造方法

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