WO2022244274A1 - Procédé de fabrication d'un élément guide d'ondes optique - Google Patents

Procédé de fabrication d'un élément guide d'ondes optique Download PDF

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Publication number
WO2022244274A1
WO2022244274A1 PCT/JP2021/019476 JP2021019476W WO2022244274A1 WO 2022244274 A1 WO2022244274 A1 WO 2022244274A1 JP 2021019476 W JP2021019476 W JP 2021019476W WO 2022244274 A1 WO2022244274 A1 WO 2022244274A1
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optical waveguide
substrate
optical
core layer
height
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PCT/JP2021/019476
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English (en)
Japanese (ja)
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飛鳥 井上
啓 渡邉
慶太 山口
雅 太田
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日本電信電話株式会社
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Priority to JP2023522194A priority Critical patent/JPWO2022244274A1/ja
Priority to PCT/JP2021/019476 priority patent/WO2022244274A1/fr
Publication of WO2022244274A1 publication Critical patent/WO2022244274A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method

Definitions

  • the present disclosure relates to a method for manufacturing an optical waveguide device.
  • optical devices capable of generating and modulating coherent light in the wavelength bands of ultraviolet, visible, near-infrared, and terahertz have been used for wavelength conversion and modulation of optical signals in optical communication systems, optical measurement, and optical processing. It is applied in a wide variety of representative fields. Among them, optical elements utilizing nonlinear optical effects have excellent characteristics in terms of wavelength conversion and electro-optical effects, and are being researched and developed.
  • Oxide-based compound substrates have high second-order nonlinear optical constants and high electro-optic constants, and are transparent in a wide wavelength band, and thus are being researched and developed as promising materials.
  • LN and LT periodically poled lithium niobate (Periodically Poled LN: PPLN) and periodically poled lithium niobate (PPLN) having a periodically poled structure formed by taking advantage of the property of being spontaneously polarized at room temperature Lithium tantalate (Periodically Poled LN: PPLT) is widely used.
  • the optical materials described above have a periodically poled structure, so that they have a high phase matching property and, as a result, a high second-order nonlinear optical effect and the like, and are therefore widely used.
  • Second harmonic generation (SHG), difference frequency generation (DFG), and sum frequency generation (SFG) are used as optical devices using high nonlinearity of PPLN and PPLT. Utilizing wavelength conversion elements are known.
  • diffused optical waveguides called titanium diffused optical waveguides and proton exchange optical waveguides were the mainstream.
  • LN is a difficult-to-work material, and therefore it has been difficult to fabricate anything other than a diffused optical waveguide.
  • this diffused optical waveguide has problems from the viewpoint of optical damage resistance and long-term reliability because impurities are diffused in order to form the optical waveguide at the time of fabrication, causing a difference in refractive index.
  • the diffusion type optical waveguide structure when high-power light enters the optical waveguide, the crystal structure is damaged due to the photorefractive effect, so there is a limit to the optical power that can be input to the optical waveguide.
  • Non-Patent Document 1 As one of the methods for solving this problem, research and development are being conducted on ridge-type optical waveguides (see Non-Patent Document 1).
  • the use of a ridge-type optical waveguide forming method by direct bonding enables high-power optical input, and is expected to expand the application to the generation of optical modulation signals with high optical intensity and laser processing technology.
  • the present disclosure has been made in view of such problems, and an object thereof is to provide a method for manufacturing an optical waveguide element, which is a structural target aimed at by an optical waveguide structure to be actually manufactured. be.
  • an optical waveguide device manufacturing method comprises measuring at least one of the height and width of a core of an optical waveguide formed on a substrate. Then, on the condition that the optical characteristics of the optical waveguide are predicted based on the measured structural values, and that the predicted optical characteristics do not become the target optical characteristics, the core of the optical waveguide formed on the substrate Determining a correction amount of at least one of height and width, reprocessing at least one of the height and width of the core of the optical waveguide formed on the substrate according to the determined correction amount, and improving the predicted optical characteristics Dividing the substrate on which the optical waveguide is formed into chips on the condition that the target optical characteristics are achieved.
  • FIG. 1 is a diagram showing a cross-sectional structure of a ridge-type optical waveguide.
  • FIG. 2 is a diagram for explaining a conventional method of manufacturing a chip having a ridge type optical waveguide.
  • FIG. 3 is a diagram illustrating a method of manufacturing a chip having a ridge-type optical waveguide according to one embodiment of the present invention.
  • FIG. 4 is a diagram showing a schematic configuration of a computer for carrying out the method of manufacturing a chip having a ridge-type optical waveguide according to one embodiment of the present invention.
  • a method for manufacturing an optical waveguide element according to one embodiment of the present invention will be described below, taking as an example a ridge-type optical waveguide in which a core layer of nonlinear optical material and an undercladding layer are bonded by direct bonding.
  • the ridge-type optical waveguide included in the device can be, for example, a PPLN optical waveguide.
  • the nonlinear optical material used in this embodiment may be any material as long as it is transparent at light wavelengths of 400 nm to 2000 nm.
  • the nonlinear optical material may be any material as long as it has a nonlinear optical effect, and may be a second-order nonlinear optical effect or a third-order or higher nonlinear optical effect. Examples include lithium niobate (LiNbO 3 ), lithium tantalate (LiTaO 3 ), beta-barium borite ( ⁇ -BaB 2 O 4 :BBO), potassium titanyl phosphate (KTiOPO 4 :KTP), and the like.
  • the nonlinear optical material may have a periodically poled structure to enhance the nonlinear optical effect. When using a nonlinear optical material having a periodically poled structure, an optical waveguide processing condition below the Curie temperature that does not lose the periodically poled structure, and an optical waveguide structure that can achieve phase matching can be appropriately selected.
  • FIG. 1 is a diagram showing a cross-sectional structure of a ridge-type optical waveguide. As shown in FIG. 1, it has a structure composed of an undercladding layer 1, an overcladding layer 3, and a core layer 2, forming an optical waveguide structure in which light propagates through the core layer 2. As shown in FIG. Since the under-cladding layer 1 and the core layer 2 are directly bonded to each other, they have high resistance to optical damage, so that excitation light with a very high power density can be input into the optical waveguide.
  • the over-cladding layer 3 may be air (air clad), chemical vapor deposition (CVD), flame deposition ( Flame Hydrolysis Deposition: FHD), glass deposited by a sputtering method, or the like may be used as long as it has an over-cladding layer according to the optical waveguide structure design.
  • the core size there are no particular restrictions on the core size, and even if the core diameter is relatively large (10 ⁇ m) or larger for multimode light propagation, it may be small core diameter (10 ⁇ m) or smaller for single mode light propagation. There may be.
  • the shape of the core is not particularly limited, and may be square, rectangular, trapezoidal, or any shape that can be processed.
  • optical waveguide forming method Next, a method for forming an optical waveguide will be described. First, as a comparative example, a conventional method for manufacturing an optical waveguide device will be described with reference to FIG. 2, and then a method for manufacturing an optical waveguide device according to an embodiment of the present invention will be described with reference to FIG.
  • the conventional method for manufacturing an optical waveguide element includes direct bonding in step 1, thinning in step 2, optical waveguide formation in step 3, chip formation in step 4, and optical characteristic evaluation in step 5. .
  • step 1 the substrate 10 of the nonlinear optical material that will be the undercladding layer 1 and the substrate 20 of the nonlinear optical material that will be the core layer 2 are directly bonded.
  • the direct bonding in step 1 leads to an improvement in resistance to light loss when high-intensity light is used as input light by using a direct bonding technique that does not use an adhesive.
  • step 1 the substrate 10 of the undercladding layer 1 and the substrate 20 of the core layer 2 are selected so that their coefficients of thermal expansion are as close as possible, so that cracking of the substrate can be suppressed in the subsequent heat treatment process. become.
  • a substrate formed by directly bonding the substrate 10 and the substrate 20 is also referred to as a bonded substrate.
  • step 2 the nonlinear optical material substrate 20, which will be the core layer 2 of the bonded substrate, is thinned.
  • the method of thinning There are no particular restrictions on the method of thinning, and candidates include a grinding polishing process, a smart cut method, and the like.
  • the core layer 2 of the optical waveguide 40 is formed by processing the substrate 20 .
  • candidates include a dry etching process, cutting out the core layer 2 of the optical waveguide 40 using a dicing saw, and the like.
  • the over-cladding layer 3 of the optical waveguide 40 is formed by a known method as required.
  • step 4 the substrate having the manufactured optical waveguide 40 is chipped to produce an optical waveguide element.
  • a chipping method a method using a dicing saw can be mentioned as a candidate, but there is no particular limitation on the processing method.
  • by optically polishing the end face or coating an anti-reflection film after chipping it is possible to reduce light loss when light enters or exits the chip 50 as an optical waveguide element. .
  • step 5 the chip 50 having the manufactured optical waveguide 40 is evaluated for optical characteristics.
  • the method for manufacturing an optical waveguide element of the present embodiment includes direct bonding in step 1, thinning in step 2, optical waveguide formation in step 3, chip formation in step 4, and optical characteristic evaluation in step 5. and further includes structural measurement in step 31, property prediction in step 32, correction amount determination in step 33, and rework in step 343.
  • the manufacturing method of FIG. 3 is a method incorporating a correction process for the optical waveguide structure.
  • Steps 1 and 2 are the same steps as described with reference to FIG.
  • step 3 the core layer 2 of the optical waveguide 40 is formed by processing the substrate 20 .
  • the method of forming the optical waveguide There are no particular restrictions on the method of forming the optical waveguide, and candidates include a dry etching process, cutting out the optical waveguide using a dicing saw, and the like.
  • no overcladding layer 3 is formed. If the overcladding layer 3 of the optical waveguide 40 is required, it is formed after steps 31 and 32 .
  • step 31 the structure of the fabricated optical waveguide 40 is measured.
  • the distribution of the width W and the height H of the core layer 2 of the optical waveguide 40 with respect to the propagation direction of light can be mentioned as a candidate. This is because the effective refractive index of the optical waveguide 40 is determined by the product of these items, and is the item that ultimately affects the effective refractive index distribution of the optical waveguide 40 in the propagation direction.
  • the width W of the core layer 2 of the optical waveguide 40 can be measured using an optical microscope or a scanning electron microscope (SEM).
  • the height H of the core layer 2 of the optical waveguide 40 that is, the film thickness distribution of the core layer 2
  • the measurement of the height H of the core layer 2 of the optical waveguide 40 in step 31 may be performed after step 2 and before step 3 . In this case, the film thickness distribution of the thinned substrate 20 before the optical waveguide is formed may be measured.
  • step 32 based on the measured values of the structure obtained in step 31 (the distribution of the width W and the height H of the core layer 2 of the optical waveguide 40), the same structure (digital twin of the optical waveguide) is generated on the simulator. to simulate optical properties.
  • the method of simulation at this time can be determined according to the target physical quantity (for example, optical loss, nonlinear optical effect).
  • Typical simulation methods include the beam propagation method (BPM) and the finite difference time domain (FDTD).
  • BPM beam propagation method
  • FDTD finite difference time domain
  • step 32 it is determined whether the optical properties predicted by the simulation are the target properties. If the expected optical characteristics are determined to be the target characteristics, the process proceeds to step 4, which is a chip forming step. to the correction process (trimming process).
  • step 33 the extent to which various structural parameters should be changed is calculated and corrected so that the optical characteristics of the structure (digital twin) on the simulator produced in step 32 can reach the target characteristics. Determine the amount (trimming amount).
  • step 34 correction (trimming) processing is performed on the actual structure based on the correction amount determined in step 33.
  • at least one of the width W and thickness H of the core layer 2 of the optical waveguide 40 can be corrected.
  • a method of correction processing local structural modification using a local etching apparatus is a candidate.
  • step 35 steps 31 to 34 are repeated until the optical waveguide structure exhibits the target characteristics.
  • the structure of the core layer 2 of the optical waveguide 40 finally obtained satisfies the initially set target values.
  • An overcladding layer 3 is deposited as required.
  • the optical waveguide 40 is a ridge-type optical waveguide including an undercladding layer 1 , a core layer 2 and an overcladding layer 3 .
  • Steps 4 and 5 are the same steps as described with reference to FIG.
  • the manufacturing method of the optical waveguide element of the present embodiment (steps 1 to 5 above) is expected to dramatically improve the yield and characteristics compared to the conventional manufacturing method of the optical waveguide element.
  • a direct bonding technique is available as a technique for firmly bonding substrates together without using an adhesive.
  • the direct bonding technique is a method in which the surfaces of the substrates are first treated using a chemical agent, and then the substrates are placed on top of each other to bond the substrates by the attractive force between the surfaces.
  • the surface treatment conditions temperature, type of chemicals, etc.
  • the surface treatment conditions for various substrates can be optimized according to the type and combination of substrates to be actually bonded.
  • the direct bonding process is performed at normal temperature, since the bonding strength at this time is small, heat treatment at a high temperature is performed after that, diffusion bonding can be performed, and the bonding strength can be improved.
  • the bonded substrates are void-free with no inclusion of microparticles or the like on the bonded surfaces, and no cracks or the like occur at room temperature.
  • the technology of direct bonding which can firmly bond substrates without using adhesives, etc., has characteristics such as high optical damage resistance, long-term reliability, and ease of device design.
  • characteristics such as high optical damage resistance, long-term reliability, and ease of device design.
  • difference frequency generation which is a type of nonlinear optical effect, there is also the advantage of avoiding the contamination of impurities and the absorption of adhesives and the like.
  • Method for thinning Techniques for thinning the substrate 20 include a grinding/polishing process, a thinning process using smart cut, and the like.
  • the method of thinning is not particularly limited, and thinning by grinding/polishing or thinning by smart cut may be used.
  • the grinding/polishing process is performed until the optical waveguide exists at an arbitrary depth using a device with a controlled flatness of the surface plate for grinding/polishing.
  • a mirror polished surface optical end face
  • the parallelism of the substrate as a whole can be obtained by measuring the parallelism of the substrate (the difference between the maximum height and the minimum height of the substrate) using an optical parallelism measuring instrument.
  • the thinning process by SmartCut mainly consists of two processes: the ion implantation process and the thin film peeling process.
  • the ion implantation step helium or hydrogen ions are implanted into the substrate 20 which needs to be thinned to have a second-order nonlinear optical effect. Ions are implanted from the substrate surface under a controlled acceleration voltage and a controlled dose, and are trapped at a certain depth from the surface.
  • the ions to be used are desirably smaller than the atoms forming the substrate, such as hydrogen and helium.
  • the substrate peeling process the above-described substrate into which ions are implanted is subjected to heat treatment, thereby peeling the substrate along the damaged layer in the substrate.
  • the heat treatment temperature in the substrate peeling step should be lower than the Curie temperature of the secondary nonlinear optical crystal so as not to disturb the patterned polarization direction.
  • the core layer thinned by the above method has an in-plane film thickness distribution due to its processing accuracy.
  • the thinning process by grinding and polishing which can produce a ridge-type optical waveguide 40 having a relatively large core layer 2 with high optical damage resistance, there is a relatively large processing limit in suppressing the film thickness distribution. It is difficult to fabricate an optical waveguide having a final target structure due to the film thickness distribution that exists due to these processing accuracy limits.
  • Methods for forming the core layer 2 of the ridge-type optical waveguide 40 include a method using a dry etching process and a method using a mechanical process represented by a dicing saw.
  • the method of forming the core layer 2 of the ridge-type optical waveguide 40 is not particularly limited, and may be a method using dry etching, a method using a dicing saw, or any other forming method. good.
  • the core layer 2 of the optical waveguide 40 is formed by etching the surface of the substrate 20 to be the core layer 2 (hereinafter referred to as the core substrate surface) using a dry etching apparatus. At this time, the pattern of the optical waveguide 40 is formed on the surface of the core substrate by a normal photolithography process.
  • the core layer 2 of the optical waveguide 40 is formed by dry etching with a dry etching apparatus using the resist of the optical waveguide pattern as a mask. In this method, the width of the optical waveguide is distributed due to the following two causes.
  • the first cause is the manufacturing error of the optical waveguide pattern created by the photolithography process.
  • This process it is possible to suppress the optical waveguide width distribution by optimizing the photolithography conditions, but it is difficult to produce a resist pattern in which the optical waveguide width distribution does not occur completely.
  • the second cause is the in-plane etching amount distribution during dry etching.
  • the dry etching process it is difficult to completely eliminate the in-plane distribution of the etching amount that affects the width of the optical waveguide 40 that is finally formed.
  • the reasons for this are that, for example, in the case of a nonlinear optical substrate having a periodically poled structure, the etching rate varies slightly depending on the polarization direction, the temperature distribution occurs in the substrate surface during the process, and the etching rate varies depending on the substrate temperature.
  • the density of plasma during etching does not always have a uniform distribution within the plane.
  • a method using machining represented by a dicing saw is a method of forming the core layer 2 of the optical waveguide 40 by using a dicing blade used in a normal dicing process.
  • the accuracy of the structure of the optical waveguide 40 to be fabricated is determined mainly by the accuracy of the machine used for processing, particularly the positional accuracy of the stage and processing section for fixing the sample. For this reason, there is a limit to the accuracy of manufacturing the core layer 2 of the optical waveguide 40, and it is difficult to manufacture an optical waveguide having an optical waveguide width exactly as designed.
  • step 5 optical characteristics are evaluated in step 5 after chipping in step 4.
  • the "characteristic" in step 5 is an index value representing the function and performance of the optical waveguide, such as second-order nonlinear optical constant and light transmittance in the case of a nonlinear optical element.
  • a target optical characteristic value is set, and the structure of the optical waveguide is designed to achieve it. Then, aiming at the target structure, the process moves to the optical waveguide processing step.
  • the structure of the optical waveguide 40 obtained deviates from the target structure. This is due to manufacturing errors in each process.
  • the optical waveguide 40 obtained through steps 1 to 3 is chipped by dicing or the like, optical end faces are formed, and the chip 50 having the optical waveguide 40 is completed.
  • the characteristics of the optical waveguide 40 are known for the first time by inspecting the completed chip 50 .
  • the characteristics of the optical waveguide are not known until it is chipped and inspected. There is the problem of producing chips that do not provide structures with the desired characteristics.
  • target optical characteristic values are set, and the structure of the optical waveguide is designed to achieve them. Then, aiming at the target structure, the process moves to the optical waveguide processing step. In an actual processing step, the structure of the optical waveguide 40 obtained deviates from the target structure. This is due to manufacturing errors in each process, and the process up to this process is the same as the conventional method of manufacturing an optical waveguide element.
  • the same structure is formed on a simulator based on structural information obtained by measuring various structural values represented by the height H and width W of the core layer 2 of the fabricated optical waveguide 40. Then, the optical characteristics are predicted using various simulation techniques.
  • the optical waveguide produced on the simulator at this time is a digital twin of the optical waveguide 40 actually produced, and it is possible to predict characteristic values non-destructively on the simulator. A pass/fail judgment is made as to whether or not the characteristic values obtained on the simulator have reached the initially set target values (judgment as to whether or not the initially set target values are met). If the predicted characteristics are acceptable, the over-cladding layer 3 is formed as necessary, and then the process proceeds to chip formation.
  • the process moves to the correction process (trimming process) for the structure of the core layer 2.
  • the structural correction amount in the correction process is calculated on the simulator, the correction amount is reflected in the structure on the simulator, and the calculation is performed until the obtained optical characteristics exceed the acceptance criteria. Then, based on the obtained correction amount, reprocessing (trimming) of the core layer 2 of the actual optical waveguide 40 is performed.
  • This reprocessing method may be any method as long as it has a processing accuracy that allows reprocessing of the correction amount obtained on the simulator, and in this embodiment, local etching that performs dry etching locally is a candidate. technology.
  • the structural values of the core layer 2 are measured again, the digital twin is reproduced on the simulator, and the optical properties are predicted.
  • the optical characteristics such as the effective refractive index (equivalent refractive index) and propagation characteristics of the optical waveguide 40 are basically determined by the width and height of the core layer and the refractive index of the core. , and the refractive index of the cladding.
  • Correction of the optical characteristics by correcting the width W of the core layer can also be performed by correcting the height of the core layer. Therefore, by correcting one or both of the width and height of the core layer of the optical waveguide, the optical characteristics of the optical waveguide can be corrected. Therefore, the structural correction amount calculated on the simulator can indicate the correction amount for one or both of the width W and height H of the core layer 2 of the optical waveguide 40 formed on the bonded substrate.
  • the distribution (film thickness distribution) of the height H of the core layer 2 of the optical waveguide 40 is measured using optical interference.
  • light is incident on the surface of the substrate 20 serving as the core layer 2, and non-contact evaluation of the film thickness of the multilayer film can be performed by light reflection spectrum analysis.
  • the method of analyzing the film thickness by using interference with reflected light is a widely used method, and the film thickness is measured using the widely used optical interference method also in this embodiment. Even if the film thickness is measured for the entire substrate surface after step 2, which is before the optical waveguide is formed in step 3, the core layer 2 of the optical waveguide 40 is measured in step 4 after the optical waveguide is formed in step 3. Any of the methods of measuring for only may be used.
  • the film thickness measurement method in this embodiment may be a method other than the method using optical interference, and any method may be used as long as it is non-invasive to the optical waveguide structure.
  • the distribution of the width W of the core layer 2 of the optical waveguide 40 is measured by directly observing the core layer 2 of the optical waveguide 40 .
  • Any specific observation method may be used as long as it is non-invasive to the optical waveguide structure, and representative examples include a method using an optical microscope and a method using an electron microscope such as a scanning electron microscope.
  • a method using a step meter or a high-precision measurement method using an atomic force microscope may be used.
  • the interval between measurement points when measuring the distribution of the width W of the core layer 2 of the optical waveguide there is no particular limitation on the interval between measurement points when measuring the distribution of the width W of the core layer 2 of the optical waveguide, and the number of measurement points is such that necessary and sufficient structural information can be obtained in the trimming process of the structure, and Any number of measurement points may be used as long as the throughput of the optical waveguide forming process does not significantly decrease.
  • a simulator In the method for manufacturing an optical waveguide element of the present embodiment, a simulator is used to simulate the same structure as the core layer 2 of the actually manufactured optical waveguide 40, and the optical characteristics of the simulated structure are predicted. A pass/fail decision is made by testing whether the property has the initial target property. If the optical properties of the simulated structure do not meet the target values, in step 33, the degree to which the structure of the core layer 2 should be corrected to obtain the target optical properties is calculated on the simulator. Then, in step 34, the structure of the core layer 2 of the optical waveguide 40 actually manufactured is corrected using the amount of correction obtained in step 33.
  • a local etching method capable of locally processing only a target range with high accuracy is used. It can be either. Then, structural values such as the height H and the width W of the core layer 2 of the optical waveguide 40 are similarly measured for the structure after processing. Using the obtained post-processing structural values, the structure of the core of the optical waveguide is recreated on the simulator so as to be a digital twin of the structure of the core layer 2 of the actual optical waveguide 40, and the optical characteristics are predicted. A pass/fail judgment is made by performing an inspection on a simulator to see if the optical properties obtained initially have the target properties.
  • a series of steps of structural measurement in step 31, property prediction in step 32, correction amount determination in step 33, reprocessing in step 34, structural measurement in step 31, and property prediction in step 32 are initially set with the expected optical properties. It is possible to form an optical waveguide having the target characteristics by repeating the process until the desired characteristics are obtained.
  • FIG. 4 is a diagram showing a schematic configuration of a computer 100 that constitutes a simulator that can be used in the method for manufacturing an optical waveguide device according to this embodiment.
  • Computer 100 has processor 101 , memory 102 , input device 103 , output device 104 , communication device 105 and storage 106 .
  • the processor 101 can be, for example, a CPU (Central Processing Unit), a microprocessor implemented in an integrated circuit (IC), or an MPU (Micro-Processing Unit), or other processor.
  • the processor 101 can function as a measurement data processing unit 132 and a control data processing unit 133 by loading a program stored in the storage 106 into the memory 102 and executing the program.
  • Memory 102 may be, for example, RAM (Random Access Memory) or ROM (Read Only Memory).
  • Input device 103 may be, for example, a keyboard, mouse, camera, or sensor.
  • Output device 104 may be, for example, a display device or a printer.
  • Communication device 105 may be, for example, a wireless communication device or a wired communication device.
  • Storage 106 may be, for example, a hard disk drive (HDD) or solid state drive (SSD).
  • HDD hard disk drive
  • SSD solid state drive
  • the computer 100 includes a measurement data processing unit 132 and a control data processing unit 133 that execute the functions of the simulator described above.
  • the measurement data processing unit 132 executes characteristic prediction in step 32 described with reference to FIG. 3, and the control data processing unit 133 executes correction amount determination (trimming amount determination) in step 33 described with reference to FIG. .
  • the solid line indicates the flow of the product according to the process.
  • the dashed line indicates measurement data obtained by structural measurement in step 31, and the one-dot chain line indicates correction amount (trimming amount) data for "control" in step 34, respectively.
  • the predicted value derived by the measurement data processing unit 132 is passed to the control data processing unit 133.
  • the control data processing unit 133 determines the correction amount (trimming amount) in step 34, which is the post-process, based on the predicted value.
  • the control data processing unit 133 supplies the correction amount data of the process 34 to be set in the manufacturing apparatus according to the obtained correction amount when the process 34 is performed.
  • the optical waveguide structure actually manufactured due to the processing accuracy limits of various processes in the conventional method for manufacturing an optical waveguide element is the target structure. It is possible to solve the problem that the target characteristics cannot be obtained due to deviation from the
  • the step of predicting the optical characteristics of the optical waveguide based on the measured structural values of the structure of the optical waveguide formed on the substrate and correcting the structure of the optical waveguide is performed.

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Abstract

La présente divulgation concerne un procédé de fabrication d'un élément guide d'ondes optique. Le procédé de fabrication selon la présente divulgation comprend : la mesure d'une valeur de structure de la hauteur et/ou de la largeur d'une couche centrale d'un guide d'ondes optique formé sur un substrat (étape 31); et la prédiction des caractéristiques optiques du guide d'ondes optique sur la base de la valeur de structure mesurée (étape 32). Ce procédé de fabrication comprend : la détermination d'une quantité de correction de la hauteur et/ou de la largeur de la couche centrale du guide d'ondes optique formé sur le substrat, à la condition que les caractéristiques optiques prédites ne satisfont pas à des caractéristiques optiques cibles (étape33); le retraitement de la hauteur et/ou de la largeur de la couche centrale en fonction de la quantité de correction déterminée (étape 34); et la formation, dans une puce, du substrat sur lequel le guide d'ondes optique est formé, à la condition que les caractéristiques optiques prédites satisfont les caractéristiques optiques cibles (étape 4).
PCT/JP2021/019476 2021-05-21 2021-05-21 Procédé de fabrication d'un élément guide d'ondes optique WO2022244274A1 (fr)

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