WO2022242050A1 - Packaging structure for image sensor chip - Google Patents

Packaging structure for image sensor chip Download PDF

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Publication number
WO2022242050A1
WO2022242050A1 PCT/CN2021/128896 CN2021128896W WO2022242050A1 WO 2022242050 A1 WO2022242050 A1 WO 2022242050A1 CN 2021128896 W CN2021128896 W CN 2021128896W WO 2022242050 A1 WO2022242050 A1 WO 2022242050A1
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Prior art keywords
image sensor
sensor chip
transparent substrate
light
lens
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PCT/CN2021/128896
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French (fr)
Chinese (zh)
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王凯厚
王鑫琴
杨剑宏
王蔚
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苏州晶方半导体科技股份有限公司
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Publication of WO2022242050A1 publication Critical patent/WO2022242050A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02002Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02325Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device

Definitions

  • the invention relates to the technical field of semiconductors, in particular to an image sensor chip packaging structure.
  • the object of the present invention is to provide an image sensor chip packaging structure.
  • the present invention provides an image sensor chip packaging structure, including:
  • a transparent substrate which has opposite first and second surfaces, the transparent substrate is divided into a light-transmitting area and a non-transmitting area surrounding the light-transmitting area, and the non-transmitting area on the second surface of the transparent substrate
  • the optical area is equipped with wiring lines;
  • An image sensor chip which is flip-chip mounted on the second surface of the transparent substrate and electrically connected to the wiring lines, the image sensor chip includes a sensing area set toward the transparent substrate, the sensing area Corresponding to the light-transmitting area;
  • At least one lens is formed on the transparent substrate on the first surface and the light-transmitting area on the second surface respectively.
  • a plurality of lenses are formed on the transparent substrate on the first surface and the second surface of the transparent substrate respectively, and the plurality of lenses form a densely arranged lens array.
  • the lens or the lens array at least completely covers the sensing area.
  • the lens is a nanoimprint microlens.
  • the first surface and/or the second surface of the transparent substrate is further coated with a filter layer, and the filter layer is located between the transparent substrate and the lens.
  • the thickness of the filter layer ranges from 100 ⁇ m to 150 ⁇ m.
  • it also includes an insulating layer covering the wiring lines, and the insulating layer exposes a part of the wiring lines to form a welding pad.
  • the welding pad includes a first welding pad and a second welding pad located outside the first welding pad.
  • a conductive bump is further included, one end of the conductive bump is electrically connected to the image sensor chip, and the other end is electrically connected to the first welding pad.
  • a sealant is provided on the periphery of the image sensor chip, and the sealant seals between the image sensor chip and the insulating layer.
  • the beneficial effect of the present invention is that a biconvex lens structure is formed by arranging lenses on both sides of the transparent substrate at the same time. Both surfaces of the upper and lower lenses have a certain radius of curvature to provide positive optical power, and there is an additional effective curvature when focusing the optical path. Variables can cooperate with each other to better eliminate aberrations.
  • the lens provided on the second surface of the transparent substrate is located in the cavity between the transparent substrate and the image sensor chip, which does not increase the thickness of the package structure, and because it can provide a certain optical power, it can reduce the The curvature of the lens located on the first surface of the transparent substrate is required to reduce its thickness, thereby reducing the thickness of the packaging structure as a whole.
  • FIG. 1 is a schematic diagram of an image sensor chip package structure in an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of the packaging structure of an image sensor chip in another embodiment of the present invention.
  • the present invention provides an image sensor chip packaging structure, which includes: a transparent substrate 1, an image sensor chip 2, and a lens 3 formed on the transparent substrate 1.
  • the transparent substrate 1 is made of inorganic glass, plexiglass and other light-transmitting materials with specific strength. It is functionally divided into a light-transmitting area 1a and a non-light-transmitting area 1b.
  • the light-transmitting area 1a is located on the image sensor chip 2. It plays the role of protecting and transmitting light to the image sensor chip 2 .
  • the upper and lower surfaces of the transparent substrate 1 are flat and smooth to avoid scattering and diffuse reflection of the incident light, thereby affecting the sensing accuracy of the image sensor chip 2 .
  • the non-light-transmitting area 1 b is used for setting wiring lines 4 , insulating layers 5 and other structures to provide electrical support and structural support for the image sensor chip 2 .
  • the wiring circuit 4 may include, for example, at least one of electronic components such as resistors, inductors, capacitors, integrated circuit blocks, and optical components, and the wiring circuit 4 may also include connecting wires between electronic components.
  • the image sensor chip 2 is flip-chip mounted on the second surface of the transparent substrate 1 and is electrically connected to the wiring circuit 4.
  • the image sensor chip 2 includes a sensing region 21 disposed toward the transparent substrate 1.
  • the sensing region 21 is connected to the light-transmitting Region 1a corresponds.
  • a third welding pad 22 is provided outside the photosensitive area, and the third welding pad 22 is electrically coupled with the sensing area 21 for electrically connecting the image sensor chip 2 with the wiring line 4 .
  • the sensing area 21 may include a plurality of photodiode arrays arranged to convert light signals irradiated onto the sensing area 21 into electrical signals.
  • the third pad 22 serves as the input and output terminals for connecting the devices in the sensing area 21 to external circuits.
  • the transparent substrate 1 is respectively formed with at least one lens 3 at the light-transmitting area 1a on its first and second surfaces.
  • the lens 3 By setting the lens 3 on the transparent substrate, it plays a role in focusing the light.
  • the amount of incoming light can be increased to improve the imaging effect of the image sensor chip 2 .
  • the lenses 3 are arranged on both sides of the transparent substrate 1. Compared with the plano-convex lens structure formed by the lens 3 arranged on one side, the lenses 3 are arranged on both sides of the transparent substrate 1 to form a biconvex lens structure.
  • One surface of the plano-convex lens structure is a plane, and the other surface is a curved surface, and only one surface can provide positive optical power.
  • the two surfaces of the bi-convex lens structure have a certain radius of curvature to provide positive optical focus. degree, there is an additional effective curvature variable when focusing the optical path, which can cooperate with each other to better eliminate aberrations.
  • the lens 3 provided on the second surface of the transparent substrate 1 is located in the cavity between the transparent substrate 1 and the image sensor chip 2, which does not increase the thickness of the packaging structure, and because it can provide a certain optical power, Therefore, the requirement on the curvature of the lens 3 located on the first surface of the transparent substrate 1 can be reduced to reduce its thickness, thereby reducing the thickness of the packaging structure as a whole.
  • one lens 3 can be respectively arranged on the first and second surfaces of the transparent substrate 1, or a plurality of lenses 3 can be arranged to form a densely arranged lens 3 array, each Parameters such as curvature and thickness of the lens 3 are specifically adjusted according to factors such as the specific size of the package structure, which is not specifically limited in the present invention.
  • a single lens 3 or an array of lenses 3 at least completely covers the sensing area 21, and the lens 3 fully covers the light-transmitting area 1a to fully use the space of the light-transmitting area 1a, thereby further improving the imaging quality of the image sensor chip 2.
  • the lens 3 is a nanoimprint microlens 3, and the structure of the lens 3 is directly formed on the transparent substrate 1 by nanoimprinting technology, without additional lens 3 layers, and the structure of the double-sided lens 3 on the transparent substrate 1 is easy to realize.
  • the lens 3 may also be formed by baking and other processes.
  • the first surface and/or the second surface of the transparent substrate 1 is covered with a filter layer 6 , and the filter layer 6 is located between the transparent substrate 1 and the lens 3 .
  • the optical filter layer 6 may be, for example, an infrared filter layer 6, which can transmit infrared light and filter light in other wavelength bands.
  • the filter layer 6 is located in the light-transmitting area 1a and the non-light-transmitting area 1b on the transparent substrate 1, that is to say, the filter layer 6 covers the light-transmitting area 1a, so the light transmitted to the image sensor chip 2 will pass through the filter Layer 6, which is conducive to improving the quality of image sensing.
  • the filter layer 6 can be plated on the surface of the transparent substrate 1 by a process such as vacuum sputtering.
  • the thickness of the filter layer 6 ranges from 100 ⁇ m to 150 ⁇ m, which is not only conducive to thinning the packaging structure of the image sensor chip 2 , but also can ensure the filtering effect of the filter layer 6 .
  • the packaging structure further includes an insulating layer 5, the insulating layer 5 is disposed on the second surface of the transparent substrate 1, and covers the wiring lines 4, and the insulating layer 5 exposes a part of the wiring lines 4 to form a soldering pad, insulating
  • the layer 5 includes an opening, and the opening exposes a part of the wiring line 4 , thereby forming a pad, and the pad includes a first pad 41 and a second pad 42 located outside the first pad 41 .
  • the first pad 41 is used to electrically connect the image sensor chip 2
  • the second pad 42 is used to electrically connect the wiring circuit 4 to the outside.
  • the packaging structure of the image sensor chip 2 provides support to improve the stability of the packaging structure of the image sensor chip 2 .
  • the image sensor chip 2 is electrically connected to the wiring line 4 through the conductive bump 23 , one end of the conductive bump 23 is electrically connected to the image sensor chip 2 , and the other end is electrically connected to the first pad 41 .
  • the material of the conductive bump 23 can be, for example, metals such as gold, silver, aluminum, titanium or copper, preferably gold.
  • the electrical connection with the wiring circuit 4 may also be realized by means of metal bonding or the like.
  • the periphery of the image sensor chip 2 is provided with a sealant 7 , and the sealant 7 seals between the image sensor chip 2 and the insulating layer 5 .
  • the sealant 7 By setting the sealant 7, on the one hand, it is possible to prevent the sensing area 21 of the image sensor chip 2 from being polluted by external water vapor; Comes off on line 4.
  • the present invention forms a double-convex lens structure by setting lenses on both sides of the transparent substrate. Both surfaces of the upper and lower lenses have a certain radius of curvature to provide positive optical power, and an effective lens is added when focusing the optical path. Curvature variables can cooperate with each other to better eliminate aberrations.
  • the lens provided on the second surface of the transparent substrate is located in the cavity between the transparent substrate and the image sensor chip, which does not increase the thickness of the package structure, and because it can provide a certain optical power, it can reduce the The curvature of the lens located on the first surface of the transparent substrate is required to reduce its thickness, thereby reducing the thickness of the packaging structure as a whole.

Abstract

Provided in the present invention is a packaging structure for an image sensor chip. The packaging structure comprises a transparent substrate which has a first surface and a second surface opposite each other, and is divided into a light-transmitting region and a non-light-transmitting region, the non-light-transmitting region on the second surface of the transparent substrate being provided with a wiring circuit; and an image sensor chip which is arranged on the second surface of the transparent substrate in a flipped-over manner and is electrically connected to the wiring circuit, wherein the image sensor chip comprises a sensing region provided towards the transparent substrate, the sensing region corresponding to the light-transmitting region; and at least one lens is formed in the light-transmitting region on the first surface and the second surface of the transparent substrate, so as to form a biconvex lens structure, such that aberrations can be eliminated and the thickness of the packaging structure can be reduced.

Description

影像传感芯片封装结构Image sensor chip packaging structure
本申请要求了申请日为2021年05月18日,申请号为202110537359.2,发明名称为“影像传感芯片封装结构”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims the priority of a Chinese patent application with an application date of May 18, 2021, an application number of 202110537359.2, and an invention title of "Image Sensor Chip Packaging Structure", the entire contents of which are incorporated in this application by reference.
技术领域technical field
本发明涉及半导体技术领域,具体地涉及一种影像传感芯片封装结构。The invention relates to the technical field of semiconductors, in particular to an image sensor chip packaging structure.
背景技术Background technique
随着科学技术的不断发展,越来越多的电子设备集成有镜头和影像传感器芯片等影像传感组件,以使电子设备具备生物识别功能,因此,影像传感器芯片得到了越来越广泛的应用。但随着芯片封装结构往小型化方向的发展,影像传感芯片所能接收的光通量变少,影响成像效果。以往技术中,为了增加光通量,通常会设置多组堆叠的透镜结构,但堆叠的透镜结构毫无疑问会大幅增加封装结构体积,不利于影像传感芯片封装结构的小型化。With the continuous development of science and technology, more and more electronic devices are integrated with image sensing components such as lenses and image sensor chips to enable electronic devices to have biometric functions. Therefore, image sensor chips have been used more and more widely. . However, with the development of chip packaging structure towards miniaturization, the luminous flux that the image sensor chip can receive decreases, which affects the imaging effect. In the prior art, in order to increase the luminous flux, multiple sets of stacked lens structures are usually provided, but the stacked lens structure will undoubtedly greatly increase the volume of the package structure, which is not conducive to the miniaturization of the package structure of the image sensor chip.
发明内容Contents of the invention
本发明的目的在于提供一种影像传感芯片封装结构。The object of the present invention is to provide an image sensor chip packaging structure.
本发明提供一种影像传感芯片封装结构,包括:The present invention provides an image sensor chip packaging structure, including:
透明基板,其具有相对的第一面和第二面,所述透明基板分为透光区以及围绕所述透光区的非透光区,于所述透明基板第二面的所述非透光区设置有布线线路;A transparent substrate, which has opposite first and second surfaces, the transparent substrate is divided into a light-transmitting area and a non-transmitting area surrounding the light-transmitting area, and the non-transmitting area on the second surface of the transparent substrate The optical area is equipped with wiring lines;
影像传感芯片,其倒装设置于所述透明基板第二面上,并与所述布线线路电性连接,所述影像传感芯片包括朝向所述透明基板设置的感应区,所述感应区与所述透光区相对应;An image sensor chip, which is flip-chip mounted on the second surface of the transparent substrate and electrically connected to the wiring lines, the image sensor chip includes a sensing area set toward the transparent substrate, the sensing area Corresponding to the light-transmitting area;
所述透明基板分别于其第一面和第二面上的透光区处形成有至少一个透镜。At least one lens is formed on the transparent substrate on the first surface and the light-transmitting area on the second surface respectively.
作为本发明的进一步改进,所述透明基板分别于其第一面和第二面上的透光区处形成有多个透镜,多个所述透镜构成密集排列的透镜阵列。As a further improvement of the present invention, a plurality of lenses are formed on the transparent substrate on the first surface and the second surface of the transparent substrate respectively, and the plurality of lenses form a densely arranged lens array.
作为本发明的进一步改进,所述透镜或所述透镜阵列至少完全覆盖所述感应区。As a further improvement of the present invention, the lens or the lens array at least completely covers the sensing area.
作为本发明的进一步改进,所述透镜为纳米压印微透镜。As a further improvement of the present invention, the lens is a nanoimprint microlens.
作为本发明的进一步改进,所述透明基板第一面和/或第二面上还覆有滤光层,所述滤光层位于所述透明基板和所述透镜之间。As a further improvement of the present invention, the first surface and/or the second surface of the transparent substrate is further coated with a filter layer, and the filter layer is located between the transparent substrate and the lens.
作为本发明的进一步改进,所述滤光层的厚度范围为100μm-150μm。As a further improvement of the present invention, the thickness of the filter layer ranges from 100 μm to 150 μm.
作为本发明的进一步改进,还包括包覆所述布线线路的绝缘层,所述绝缘层暴露出 部分所述布线线路构成焊垫。As a further improvement of the present invention, it also includes an insulating layer covering the wiring lines, and the insulating layer exposes a part of the wiring lines to form a welding pad.
作为本发明的进一步改进,所述焊垫包括第一焊垫和位于所述第一焊垫外侧的第二焊垫。As a further improvement of the present invention, the welding pad includes a first welding pad and a second welding pad located outside the first welding pad.
作为本发明的进一步改进,还包括导电凸块,所述导电凸块的一端与所述影像传感芯片电连接、另一端与所述第一焊垫电连接。As a further improvement of the present invention, a conductive bump is further included, one end of the conductive bump is electrically connected to the image sensor chip, and the other end is electrically connected to the first welding pad.
作为本发明的进一步改进,所述影像传感芯片的周缘设置有密封胶,所述密封胶将所述影像传感芯片与绝缘层之间密封。As a further improvement of the present invention, a sealant is provided on the periphery of the image sensor chip, and the sealant seals between the image sensor chip and the insulating layer.
本发明的有益效果是通过在透明基板两面同时设置透镜,形成双凸透镜结构,上下透镜的两个面都有一定的曲率半径以提供正的光焦度,在聚焦光路时多了一个有效的曲率变量,可以互相配合更好的消除像差。另外,透明基板第二面设置的透镜位于透明基板和影像传感芯片之间的空腔内,其不会额外增加封装结构的厚度,并且由于其能够提供一定的光焦度,因此能降低对位于透明基板第一面的透镜的曲率要求,以减薄其厚度,从而在整体上降低封装结构的厚度。The beneficial effect of the present invention is that a biconvex lens structure is formed by arranging lenses on both sides of the transparent substrate at the same time. Both surfaces of the upper and lower lenses have a certain radius of curvature to provide positive optical power, and there is an additional effective curvature when focusing the optical path. Variables can cooperate with each other to better eliminate aberrations. In addition, the lens provided on the second surface of the transparent substrate is located in the cavity between the transparent substrate and the image sensor chip, which does not increase the thickness of the package structure, and because it can provide a certain optical power, it can reduce the The curvature of the lens located on the first surface of the transparent substrate is required to reduce its thickness, thereby reducing the thickness of the packaging structure as a whole.
附图说明Description of drawings
图1是本发明一实施方式中的影像传感芯片封装结构示意图。FIG. 1 is a schematic diagram of an image sensor chip package structure in an embodiment of the present invention.
图2是本发明另一实施方式中的影像传感芯片封装结构示意图。FIG. 2 is a schematic diagram of the packaging structure of an image sensor chip in another embodiment of the present invention.
具体实施方式Detailed ways
为使本申请的目的、技术方案和优点更加清楚,下面将结合本申请具体实施方式及相应的附图对本申请技术方案进行清楚、完整地描述。显然,所描述的实施方式仅是本申请一部分实施方式,而不是全部的实施方式。基于本申请中的实施方式,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式,都属于本申请保护的范围。In order to make the purpose, technical solution and advantages of the present application clearer, the following will clearly and completely describe the technical solution of the present application in combination with specific implementation methods of the present application and corresponding drawings. Apparently, the described implementations are only some of the implementations of this application, not all of them. Based on the implementation manners in this application, all other implementation manners obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
下面详细描述本发明的实施方式,实施方式的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的,仅用于解释本发明,而不能理解为对本发明的限制。Embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.
为方便说明,本文使用表示空间相对位置的术语来进行描述,例如“上”、“下”、“后”、“前”等,用来描述附图中所示的一个单元或者特征相对于另一个单元或特征的关系。空间相对位置的术语可以包括设备在使用或工作中除了图中所示方位以外的不同方位。例如,如果将图中的装置翻转,则被描述为位于其他单元或特征“下方”或“上方”的单元将位于其他单元或特征“下方”或“上方”。因此,示例性术语“下方”可以囊括下方和上方这两种空间方位。For the convenience of description, terms representing relative positions in space are used herein for description, such as "upper", "lower", "rear", "front", etc., which are used to describe the relative position of one unit or feature shown in the drawings relative to another. A unit or feature relationship. Spatially relative terms may encompass different orientations of the device in use or operation other than the orientation shown in the figures. For example, if the device in the figures is turned over, elements described as "below" or "above" other elements or features would then be oriented "below" or "above" the other elements or features. Thus, the exemplary term "below" can encompass both a spatial orientation of below and above.
如图1所示,本发明提供一种影像传感芯片封装结构,其包括:透明基板1、影像 传感芯片2、形成于透明基板1上的透镜3。As shown in FIG. 1 , the present invention provides an image sensor chip packaging structure, which includes: a transparent substrate 1, an image sensor chip 2, and a lens 3 formed on the transparent substrate 1.
透明基板1,其具有相对的第一面和第二面,透明基板1分为透光区1a以及围绕透光区1a的非透光区1b,于透明基板1第二面的非透光区1b设置有布线线路4。透明基板1材质为无机玻璃、有机玻璃等具有特定强度的透光材料,其在功能上划分为透光区1a和非透光区1b,透光区1a位于影像传感芯片2之上,其起到对影像传感芯片2保护和透光的作用。透明基板1的上下表面均为平整光滑面,以避免对入射的光线产生散射、漫反射等作用,从而影响影像传感芯片2的感应精度。非透光区1b用于设置布线线路4、绝缘层5等结构,为影像传感芯片2提供电器支持和结构支撑。A transparent substrate 1, which has opposite first and second surfaces, the transparent substrate 1 is divided into a light-transmitting area 1a and a non-light-transmitting area 1b surrounding the light-transmitting area 1a, and the non-light-transmitting area on the second surface of the transparent substrate 1 1b is provided with wiring lines 4 . The transparent substrate 1 is made of inorganic glass, plexiglass and other light-transmitting materials with specific strength. It is functionally divided into a light-transmitting area 1a and a non-light-transmitting area 1b. The light-transmitting area 1a is located on the image sensor chip 2. It plays the role of protecting and transmitting light to the image sensor chip 2 . The upper and lower surfaces of the transparent substrate 1 are flat and smooth to avoid scattering and diffuse reflection of the incident light, thereby affecting the sensing accuracy of the image sensor chip 2 . The non-light-transmitting area 1 b is used for setting wiring lines 4 , insulating layers 5 and other structures to provide electrical support and structural support for the image sensor chip 2 .
布线线路4例如可以包括电阻、电感、电容、集成电路块和光学组件等电子元器件中的至少一种,以及布线线路4还包括各电子元器件之间的连接导线。The wiring circuit 4 may include, for example, at least one of electronic components such as resistors, inductors, capacitors, integrated circuit blocks, and optical components, and the wiring circuit 4 may also include connecting wires between electronic components.
影像传感芯片2,其倒装设置于透明基板1第二面上,并与布线线路4电性连接,影像传感芯片2包括朝向透明基板1设置的感应区21,感应区21与透光区1a相对应。位于感光区外侧设有第三焊垫22,第三焊垫22与感应区21电耦合,用于将影像传感芯片2与布线线路4电连接。The image sensor chip 2 is flip-chip mounted on the second surface of the transparent substrate 1 and is electrically connected to the wiring circuit 4. The image sensor chip 2 includes a sensing region 21 disposed toward the transparent substrate 1. The sensing region 21 is connected to the light-transmitting Region 1a corresponds. A third welding pad 22 is provided outside the photosensitive area, and the third welding pad 22 is electrically coupled with the sensing area 21 for electrically connecting the image sensor chip 2 with the wiring line 4 .
感应区21可以包括多个光电二极管阵列排布,用于将照射至感应区21的光信号转化为电信号。第三焊垫22作为感应区21内器件与外部电路连接的输入和输出端。The sensing area 21 may include a plurality of photodiode arrays arranged to convert light signals irradiated onto the sensing area 21 into electrical signals. The third pad 22 serves as the input and output terminals for connecting the devices in the sensing area 21 to external circuits.
透明基板1分别于其第一面和第二面上的透光区1a处形成有至少一个透镜3,通过在透明件基板上设置透镜3,起到对光的聚焦作用,在透光区1a尺寸一定时,可以增加进光量,改善影像传感芯片2成像效果。进一步的,在透明基板1两面同时设置透镜3,相比于传统的单面设置透镜3结构形成的平凸透镜结构,在透明基板1两面同时设置透镜3,能够形成双凸透镜结构。平凸透镜结构一个面为平面,另一个面为曲面,只有一个曲面能够提供正的光焦度,相比于平凸透镜结构,双凸透镜结构两个面都有一定的曲率半径以提供正的光焦度,在聚焦光路时多了一个有效的曲率变量,可以互相配合更好的消除像差。另外,透明基板1第二面设置的透镜3位于透明基板1和影像传感芯片2之间的空腔内,其不会额外增加封装结构的厚度,并且由于其能够提供一定的光焦度,因此能降低对位于透明基板1第一面的透镜3的曲率要求,以减薄其厚度,从而在整体上降低封装结构的厚度。The transparent substrate 1 is respectively formed with at least one lens 3 at the light-transmitting area 1a on its first and second surfaces. By setting the lens 3 on the transparent substrate, it plays a role in focusing the light. In the light-transmitting area 1a When the size is constant, the amount of incoming light can be increased to improve the imaging effect of the image sensor chip 2 . Further, the lenses 3 are arranged on both sides of the transparent substrate 1. Compared with the plano-convex lens structure formed by the lens 3 arranged on one side, the lenses 3 are arranged on both sides of the transparent substrate 1 to form a biconvex lens structure. One surface of the plano-convex lens structure is a plane, and the other surface is a curved surface, and only one surface can provide positive optical power. Compared with the plano-convex lens structure, the two surfaces of the bi-convex lens structure have a certain radius of curvature to provide positive optical focus. degree, there is an additional effective curvature variable when focusing the optical path, which can cooperate with each other to better eliminate aberrations. In addition, the lens 3 provided on the second surface of the transparent substrate 1 is located in the cavity between the transparent substrate 1 and the image sensor chip 2, which does not increase the thickness of the packaging structure, and because it can provide a certain optical power, Therefore, the requirement on the curvature of the lens 3 located on the first surface of the transparent substrate 1 can be reduced to reduce its thickness, thereby reducing the thickness of the packaging structure as a whole.
如图1和图2所示,根据不同芯片光路需求,可以于透明基板1第一面和第二面可以分别设置一个透镜3,或设置多个透镜3组成密集排列的透镜3阵列,每个透镜3的曲率、厚度等参数根据封装结构的具体尺寸等因素而具体调整,本发明对此不做具体限制。As shown in Figures 1 and 2, according to the optical path requirements of different chips, one lens 3 can be respectively arranged on the first and second surfaces of the transparent substrate 1, or a plurality of lenses 3 can be arranged to form a densely arranged lens 3 array, each Parameters such as curvature and thickness of the lens 3 are specifically adjusted according to factors such as the specific size of the package structure, which is not specifically limited in the present invention.
进一步的,单个透镜3或透镜3阵列至少完全覆盖感应区21,将透镜3在透光区1a实现全覆盖以充分使用透光区1a空间,从而进一步提高影像传感芯片2成像质量。Further, a single lens 3 or an array of lenses 3 at least completely covers the sensing area 21, and the lens 3 fully covers the light-transmitting area 1a to fully use the space of the light-transmitting area 1a, thereby further improving the imaging quality of the image sensor chip 2.
进一步的,透镜3为纳米压印微透镜3,通过纳米压印技术直接在透明基板1上形成透镜3结构,无需额外设置透镜3层,易于实现透明基板1双面透镜3的结构。在本发明的一些其他实施方式中,透镜3也可通过烘烤成型等工艺方式形成。Furthermore, the lens 3 is a nanoimprint microlens 3, and the structure of the lens 3 is directly formed on the transparent substrate 1 by nanoimprinting technology, without additional lens 3 layers, and the structure of the double-sided lens 3 on the transparent substrate 1 is easy to realize. In some other embodiments of the present invention, the lens 3 may also be formed by baking and other processes.
在本发明的一些实施方式中,透明基板1第一面和/或第二面上还覆有滤光层6,滤光层6位于透明基板1和透镜3之间。滤光层6光层例如可以是红外光滤光层6,红外光滤光层6可以使红外光透过,过滤其他波段的光线。滤光层6位于透明基板1上的透光区1a和非透光区1b,也就是说滤光层6覆盖透光区1a,因此,传输至影像传感芯片2的光线均会通过滤光层6,从而有利于提高影像传感的质量。滤光层6可以通过诸如真空溅镀等工艺方法的镀覆在透明基板1表面。In some embodiments of the present invention, the first surface and/or the second surface of the transparent substrate 1 is covered with a filter layer 6 , and the filter layer 6 is located between the transparent substrate 1 and the lens 3 . The optical filter layer 6 may be, for example, an infrared filter layer 6, which can transmit infrared light and filter light in other wavelength bands. The filter layer 6 is located in the light-transmitting area 1a and the non-light-transmitting area 1b on the transparent substrate 1, that is to say, the filter layer 6 covers the light-transmitting area 1a, so the light transmitted to the image sensor chip 2 will pass through the filter Layer 6, which is conducive to improving the quality of image sensing. The filter layer 6 can be plated on the surface of the transparent substrate 1 by a process such as vacuum sputtering.
进一步的,滤光层6的厚度范围为100μm-150μm,这样设置既有利于减薄影像传感芯片2的封装结构,又能够确保滤光层6的滤光效果。Further, the thickness of the filter layer 6 ranges from 100 μm to 150 μm, which is not only conducive to thinning the packaging structure of the image sensor chip 2 , but also can ensure the filtering effect of the filter layer 6 .
在本发明的一些实施方式中,封装结构还包括绝缘层5,绝缘层5设置于透明基板1第二面上,包覆布线线路4,绝缘层5暴露出部分布线线路4构成焊垫,绝缘层5包括开口,开口暴露布线线路4的一部分,从而形成焊垫,焊垫包括第一焊垫41和位于第一焊垫41外侧的第二焊垫42。第一焊垫41用以与影像传感芯片2进行电连接,第二焊垫42用以将布线线路4与外界实现电连接。通过设置包覆布线线路4的绝缘层5,一方面有利于避免布线线路4除焊垫外的其他部分与外部电路发生短接,另一方面绝缘层5的设置有利于为影像传感芯片2的封装结构提供支撑,提升影像传感芯片2的封装结构的稳固性。In some embodiments of the present invention, the packaging structure further includes an insulating layer 5, the insulating layer 5 is disposed on the second surface of the transparent substrate 1, and covers the wiring lines 4, and the insulating layer 5 exposes a part of the wiring lines 4 to form a soldering pad, insulating The layer 5 includes an opening, and the opening exposes a part of the wiring line 4 , thereby forming a pad, and the pad includes a first pad 41 and a second pad 42 located outside the first pad 41 . The first pad 41 is used to electrically connect the image sensor chip 2 , and the second pad 42 is used to electrically connect the wiring circuit 4 to the outside. By setting the insulating layer 5 covering the wiring line 4, on the one hand, it is beneficial to avoid short-circuiting between other parts of the wiring line 4 except the welding pad and the external circuit; The packaging structure of the image sensor chip 2 provides support to improve the stability of the packaging structure of the image sensor chip 2 .
影像传感芯片2通过导电凸块23与布线线路4实现电连接,导电凸块23的一端与影像传感芯片2电连接、另一端与第一焊垫41电连接。导电凸块23的材料例如可以是金、银、铝、钛或铜等金属,优选为金。在本发明的另一些实施方式中,也可通过金属打线等方式与布线线路4实现电连接。The image sensor chip 2 is electrically connected to the wiring line 4 through the conductive bump 23 , one end of the conductive bump 23 is electrically connected to the image sensor chip 2 , and the other end is electrically connected to the first pad 41 . The material of the conductive bump 23 can be, for example, metals such as gold, silver, aluminum, titanium or copper, preferably gold. In some other embodiments of the present invention, the electrical connection with the wiring circuit 4 may also be realized by means of metal bonding or the like.
在本发明的一些实施方式中,影像传感芯片2的周缘设置有密封胶7,密封胶7将影像传感芯片2与绝缘层5之间密封。通过设置密封胶7,一方面,可以防止影像传感芯片2的感应区21受到外界水汽的污染;另一方面,密封胶7可以将强封装结构的结构强度,防止影像传感芯片2从布线线路4上脱落。In some embodiments of the present invention, the periphery of the image sensor chip 2 is provided with a sealant 7 , and the sealant 7 seals between the image sensor chip 2 and the insulating layer 5 . By setting the sealant 7, on the one hand, it is possible to prevent the sensing area 21 of the image sensor chip 2 from being polluted by external water vapor; Comes off on line 4.
综上所述,本发明通过在透明基板两面同时设置透镜,形成双凸透镜结构,上下透镜的两个面都有一定的曲率半径以提供正的光焦度,在聚焦光路时多了一个有效的曲率变量,可以互相配合更好的消除像差。另外,透明基板第二面设置的透镜位于透明基板和影像传感芯片之间的空腔内,其不会额外增加封装结构的厚度,并且由于其能够提供一定的光焦度,因此能降低对位于透明基板第一面的透镜的曲率要求,以减薄其厚度,从而在整体上降低封装结构的厚度。In summary, the present invention forms a double-convex lens structure by setting lenses on both sides of the transparent substrate. Both surfaces of the upper and lower lenses have a certain radius of curvature to provide positive optical power, and an effective lens is added when focusing the optical path. Curvature variables can cooperate with each other to better eliminate aberrations. In addition, the lens provided on the second surface of the transparent substrate is located in the cavity between the transparent substrate and the image sensor chip, which does not increase the thickness of the package structure, and because it can provide a certain optical power, it can reduce the The curvature of the lens located on the first surface of the transparent substrate is required to reduce its thickness, thereby reducing the thickness of the packaging structure as a whole.
应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施方式中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。It should be understood that although this description is described according to implementation modes, not each implementation mode only includes an independent technical solution. The technical solutions in the embodiments can also be properly combined to form other embodiments that can be understood by those skilled in the art.
上文所列出的一系列的详细说明仅仅是针对本发明的可行性实施方式的具体说明,并非用以限制本发明的保护范围,凡未脱离本发明技艺精神所作的等效实施方式或变更均应包含在本发明的保护范围之内。The series of detailed descriptions listed above are only specific descriptions of feasible implementations of the present invention, and are not intended to limit the scope of protection of the present invention. Any equivalent implementation or change that does not depart from the technical spirit of the present invention All should be included within the protection scope of the present invention.

Claims (10)

  1. 一种影像传感芯片封装结构,包括:An image sensor chip packaging structure, comprising:
    透明基板,其具有相对的第一面和第二面,所述透明基板分为透光区以及围绕所述透光区的非透光区,于所述透明基板第二面的所述非透光区设置有布线线路;A transparent substrate, which has opposite first and second surfaces, the transparent substrate is divided into a light-transmitting area and a non-transmitting area surrounding the light-transmitting area, and the non-transmitting area on the second surface of the transparent substrate The optical area is equipped with wiring lines;
    影像传感芯片,其倒装设置于所述透明基板第二面上,并与所述布线线路电性连接,所述影像传感芯片包括朝向所述透明基板设置的感应区,所述感应区与所述透光区相对应;An image sensor chip, which is flip-chip mounted on the second surface of the transparent substrate and electrically connected to the wiring lines, the image sensor chip includes a sensing area set toward the transparent substrate, the sensing area Corresponding to the light-transmitting area;
    其特征在于,It is characterized in that,
    所述透明基板分别于其第一面和第二面上的透光区处形成有至少一个透镜。At least one lens is formed on the transparent substrate on the first surface and the light-transmitting area on the second surface respectively.
  2. 根据权利要求1所述的影像传感芯片封装结构,其特征在于,The image sensor chip packaging structure according to claim 1, characterized in that,
    所述透明基板分别于其第一面和第二面上的透光区处形成有多个透镜,多个所述透镜构成密集排列的透镜阵列。A plurality of lenses are formed on the transparent areas of the first surface and the second surface of the transparent substrate respectively, and the plurality of lenses form a densely arranged lens array.
  3. 根据权利要求2所述的影像传感芯片封装结构,其特征在于,所述透镜或所述透镜阵列至少完全覆盖所述感应区。The image sensor chip package structure according to claim 2, wherein the lens or the lens array at least completely covers the sensing area.
  4. 根据权利要求3所述的影像传感芯片封装结构,其特征在于,所述透镜为纳米压印微透镜。The image sensor chip package structure according to claim 3, wherein the lens is a nanoimprinted microlens.
  5. 根据权利要求1所述的影像传感芯片封装结构,其特征在于,所述透明基板第一面和/或第二面上还覆有滤光层,所述滤光层位于所述透明基板和所述透镜之间。The image sensor chip packaging structure according to claim 1, characterized in that, the first surface and/or the second surface of the transparent substrate is also covered with a filter layer, and the filter layer is located between the transparent substrate and the transparent substrate. between the lenses.
  6. 根据权利要求5所述的影像传感芯片封装结构,其特征在于,所述滤光层的厚度范围为100μm-150μm。The image sensor chip package structure according to claim 5, wherein the thickness of the filter layer is in a range of 100 μm-150 μm.
  7. 根据权利要求1所述的影像传感芯片封装结构,其特征在于,还包括包覆所述布线线路的绝缘层,所述绝缘层暴露出部分所述布线线路构成焊垫。The image sensor chip package structure according to claim 1, further comprising an insulating layer covering the wiring lines, and the insulating layer exposes a part of the wiring lines to form a soldering pad.
  8. 根据权利要求7所述的影像传感芯片封装结构,其特征在于,所述焊垫包括第一焊垫和位于所述第一焊垫外侧的第二焊垫。The package structure of the image sensor chip according to claim 7, wherein the bonding pads include a first bonding pad and a second bonding pad located outside the first bonding pad.
  9. 根据权利要求8所述的影像传感芯片封装结构,其特征在于,还包括导电凸块,所述导电凸块的一端与所述影像传感芯片电连接、另一端与所述第一焊垫电连接。The image sensor chip packaging structure according to claim 8, further comprising a conductive bump, one end of the conductive bump is electrically connected to the image sensor chip, and the other end is electrically connected to the first pad. electrical connection.
  10. 根据权利要求7所述的影像传感芯片封装结构,其特征在于,所述影像传感芯片的周缘设置有密封胶,所述密封胶将所述影像传感芯片与绝缘层之间密封。The packaging structure of the image sensor chip according to claim 7, wherein a sealant is provided on the periphery of the image sensor chip, and the sealant seals between the image sensor chip and the insulating layer.
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