WO2021097957A1

WO2021097957A1 - Package structure of image sensor chip

Info

Publication number: WO2021097957A1
Application number: PCT/CN2019/123923
Authority: WO
Inventors: 王凯厚; 杨剑宏; 朱程亮; 吴明轩
Original assignee: 苏州晶方半导体科技股份有限公司
Priority date: 2019-11-18
Filing date: 2019-12-09
Publication date: 2021-05-27
Also published as: CN210805774U

Abstract

A package structure of an image sensor chip (300). The package structure of the image sensor chip (300) comprises: a substrate (100), wherein the substrate (100) comprises a light-transmissive region (110) and a non-light-transmissive region (120) surrounding the light-transmissive region (110), a wiring line (104) is disposed in the non-light-transmissive region (120), and the substrate (100) further comprises a filter layer (101) located in the light-transmissive region (110) and the non-light-transmissive region (120) of the substrate (100); and the image sensor chip (300) inversely disposed on a side of the substrate (100) facing away from the filter layer (101), wherein the image sensor chip (300) comprises a sensing region (310), and the sensing region (310) is disposed on a side facing the substrate (100) and corresponds to the light-transmissive region (110).

Description

Packaging structure of image sensor chip

The present disclosure claims the priority of a Chinese patent application filed with the Chinese Patent Office with an application number of 201921993340.3 on November 18, 2019, and the entire content of the above application is incorporated into the present disclosure by reference.

Technical field

This application relates to the field of image acquisition technology, for example, to a packaging structure of an image sensor chip.

Background technique

With the continuous development of science and technology, more and more electronic devices are widely used in people's daily life and work, bringing great convenience to people and becoming indispensable and important tools for people.

In related technologies, image sensor components such as a lens and an image sensor chip are integrated in the electronic device to enable the electronic device to have a biological recognition function, for example, iris recognition. Iris recognition is not easy to copy and steal, and has the advantage of higher security for identity recognition. Therefore, image sensor chips have been more and more widely used. However, the existing packaging structure of the image sensor chip is not conducive to the miniaturization of electronic devices.

Summary of the invention

The present application provides a packaging structure of an image sensor chip to facilitate the miniaturization of electronic equipment.

An image sensor chip packaging structure, including:

A substrate, the substrate includes a light-transmitting area and a non-transmitting area surrounding the light-transmitting area, the non-transmitting area is provided with wiring lines; the substrate includes a filter layer, the filter layer is located on the substrate The light-transmitting area and the non-light-transmitting area on the upper part;

An image sensor chip flip-chip arranged on the side of the substrate away from the filter layer, the image sensor chip includes a sensing area, the sensing area is disposed toward one side of the substrate, the sensing area and the The light-transmitting area corresponds.

In the embodiment of the present application, the filter layer is arranged on the substrate and located in the light-transmitting area and the non-light-transmitting area. The image sensor chip is flip-chip arranged on the side of the substrate away from the filter layer, and the sensing area is arranged toward the side of the substrate. The area corresponds to the light-transmitting area, so that all light transmitted to the image sensor chip passes through the filter layer. In the related art, the optical filter in the electronic device is clamped on the lens, and the thickness of the optical filter is thicker to be able to be mechanically connected with the lens. In addition, the size of the clamped component is also large. Therefore, the existing The setting of the filter is not conducive to the miniaturization of electronic equipment. Different from the related art, the embodiment of the present application arranges the filter layer in the packaging structure of the image sensor chip. Therefore, compared with the related technology, on the one hand, the embodiment of the present application can use a bonding process to attach the filter layer. On the substrate, since the lamination process requires a lower thickness of the filter layer, the thickness of the filter layer can be set to be thinner to facilitate the lighter and thinner package structure of the image sensor chip; on the other hand, the present invention The application embodiment can adopt the bonding process without using the card connection component, which avoids the card connection component occupying the space of the electronic device. In summary, the packaging structure of the image sensor chip provided by the embodiments of the present application is beneficial to the miniaturization of electronic devices.

The base further includes a light-transmitting substrate, the filter layer is disposed on the surface of the light-transmitting substrate, and the wiring line is disposed on a side of the base close to the image sensor chip. Among them, the material of the light-transmitting substrate may be, for example, glass, and the structure of the light-transmitting substrate + filter layer constitutes IR glass. The light-transmitting substrate covers the light-transmitting area and the non-light-transmitting area, plays a role of supporting the filter layer and wiring lines, and improves the stability of the packaging structure of the image sensor chip.

The filter layer includes a first filter layer and a second filter layer, and the first filter layer and the second filter layer are respectively disposed on the front and back of the light-transmitting substrate. Wherein, the front of the light-transmitting substrate refers to the side of the light-transmitting substrate away from the image sensor chip; the back of the light-transmitting substrate refers to the side of the light-transmitting substrate close to the image sensor chip. That is, the filter layer provided on the front surface of the transparent substrate is called the first filter layer, and the filter layer provided on the back surface of the transparent substrate is called the second filter layer. The material of the light-transmitting substrate may be, for example, glass, and the structure of the first filter layer+the light-transmitting substrate+the second filter layer constitutes IR glass. In the embodiment of the present application, both sides of the transparent substrate are provided with filter layers, which is equivalent to increasing the thickness of the filter layer, which is beneficial to improve the filter effect of the filter layer.

The wiring line is arranged on a side of the second filter layer close to the image sensor chip. That is, the wiring line is arranged on the side of the IR glass close to the image sensor chip. The arrangement of the embodiment of the application in this way not only makes the location of the wiring line closer to the image sensor chip, thereby facilitating the connection between the image sensor chip and the wiring line; moreover, there is no need to provide a wiring line between the filter layer and the light-transmitting substrate. It is conducive to the bonding of the filter layer and the light-transmitting substrate, thereby reducing the process cost and improving the production efficiency.

The thickness of the filter layer ranges from 100 um to 150 um. This arrangement is not only beneficial to thin the packaging structure of the image sensor chip, but also can ensure the filtering effect of the filter layer.

It also includes a bump, one end of the bump is electrically connected to the image sensor chip, and the other end of the bump is electrically connected to the wiring line. Among them, the material of the bumps may be metals such as gold (Au), silver (Ag), aluminum (Al), titanium (Ti), or copper (Cu), and may be gold (Au). One end of the bump is in contact with the image sensor chip. Illustratively, the image sensor chip is provided with a pad at a position corresponding to the bump, and the pad is in contact with one end of the bump. The bumps and the pads can be electrically connected by soldering or heating and melting. The other end of the bump is in contact with the wiring line. Illustratively, the wiring line is provided with a pad at a position corresponding to the bump, and the pad is in contact with the other end of the bump. The bumps and the pads on the wiring lines can be electrically connected by soldering or heating and melting.

It also includes a soldering pad located in the non-transmissive area, the soldering pad is electrically connected to the wiring line, and the surface of the soldering pad away from the light-transmitting substrate has a smaller vertical distance from the light-transmitting substrate than the chip The vertical distance between the side far away from the light-transmitting substrate and the light-transmitting substrate.

The soldering pad is used for electrically connecting with an external circuit through conductive glue. Among them, the conductive adhesive refers to a colloid with conductive properties, for example, it may be an anisotropic conductive film (ACF). Compared with solder balls, the thickness of the conductive adhesive is thinner, which is beneficial to reduce the thickness of the package structure of the image sensor chip. Exemplarily, if solder balls are used as the connection medium between the wiring lines and the external circuit, the overall thickness of the package structure of the image sensor chip is about 800um, and if the conductive glue is used as the connection medium between the wiring lines and the external circuit, the image of the filter layer is included. The thickness of the package structure of the sensor chip is less than or equal to 300 um. It can be seen that the embodiment of the present application can reduce the thickness of the package structure of the image sensor chip. In addition, the embodiments of the present application can reduce the heat generated in the bonding process, thereby facilitating the selection of a sealant with better airtightness, and improving the sealant's ability to isolate water vapor.

The substrate further includes an insulating layer covering the wiring line; a part of the insulating layer that exposes the wiring line constitutes the bonding pad. Wherein, for example, the insulating layer includes an opening, and the opening exposes a part of the wiring line, thereby forming a bonding pad. In the embodiment of the present application, an insulating layer is provided to cover the wiring lines, and a part of the insulating layer that exposes the wiring lines constitutes solder pads. On the one hand, it is beneficial to avoid short-circuiting of other parts of the wiring lines with the external circuit except for the solder pads. On the other hand, the insulation layer The arrangement is beneficial to provide support for the packaging structure of the image sensor chip and improve the stability of the packaging structure of the image sensor chip.

The soldering pad includes a first soldering pad and a second soldering pad; the first soldering pad is located on a side of the second soldering pad away from the light-transmitting area; the first soldering pad and the second soldering pad The insulating layer is arranged between the pads.

The first solder pad is electrically connected to the second solder pad.

The side of the first solder pad away from the second solder pad is exposed. That is, the side surface of the first solder pad away from the second solder pad is not provided with an insulating layer. The embodiment of the present application is arranged in such a way that the operable space for the conductive adhesive connection of the first soldering pad is relatively large, the operation difficulty is reduced, and the conductive adhesive is beneficial to stick the soldering pad and the external circuit more firmly.

The insulating layer is provided on a side of the wiring line close to the light-transmitting area, that is, an insulating layer is also provided on the inner side of the wiring line. Compared with the uneven surface of the wiring line, the surface of the insulating layer is flatter, which facilitates the reflection of the biometric light to the sensing area of the image sensor chip through the surface of the insulating layer.

The bonding pads are arranged on one side or both sides of the peripheral area of the chip.

The thickness of the packaging structure is less than or equal to 300 um, so that the thickness of the packaging structure of the image sensor chip is thinner.

A sealant is provided on the periphery of the image sensor chip, and the sealant seals the image sensor chip and the substrate. The embodiment of the present application is arranged in this way, on the one hand, it can prevent the sensing area of the image sensor chip from being contaminated by external water vapor; on the other hand, the sealant can prevent the image sensor chip from falling off the substrate.

In this application, the filter layer is located on the substrate, and is located in the light-transmitting area and the non-light-transmitting area. The image sensor chip is flip-chip arranged on the side of the substrate away from the filter layer, and the sensing area is set toward the side of the substrate. The light-transmitting area corresponds so that the light transmitted to the image sensor chip will pass through the filter layer. In the related art, the optical filter in the electronic device is clamped on the lens, and the thickness of the optical filter is thicker to be able to be mechanically connected with the lens. In addition, the size of the clamped component is also large. Therefore, the existing The setting of the filter is not conducive to the miniaturization of electronic equipment. Different from the related technology, the present application sets the filter layer in the packaging structure of the image sensor chip. Therefore, compared with the related technology, on the one hand, the present application can use a laminating process to attach the filter layer to the substrate. Since the bonding process requires relatively low thickness of the filter layer, the thickness of the filter layer can be set to be thinner to facilitate the lighter and thinner packaging structure of the image sensor chip; on the other hand, the application can adopt the pasting The technology is integrated without the use of card connection components, which avoids the space of electronic equipment occupied by the card connection components. In summary, the packaging structure of the image sensor chip provided by the present application is beneficial to the miniaturization of electronic devices.

Description of the drawings

FIG. 1 is a schematic diagram of an image sensor chip packaging structure provided by an embodiment of the application;

2 is a schematic diagram of another image sensor chip packaging structure provided by an embodiment of the application;

3 is a schematic diagram of yet another image sensor chip packaging structure provided by an embodiment of the application;

4 is a schematic diagram of yet another image sensor chip packaging structure provided by an embodiment of the application;

FIG. 5 is a schematic diagram of the structure of FIG. 4 along the direction C. FIG.

6 is a schematic diagram of yet another image sensor chip packaging structure provided by an embodiment of the application;

FIG. 7 is a schematic diagram of yet another image sensor chip packaging structure provided by an embodiment of the application;

FIG. 8 is a schematic diagram of yet another image sensor chip packaging structure provided by an embodiment of the application.

Detailed ways

The application will be further described in detail below with reference to the drawings and embodiments. The embodiment of the present application provides an image sensor packaging structure, which can be applied to biological identification of electronic devices. FIG. 1 is a schematic diagram of an image sensor chip packaging structure provided by an embodiment of the application. Referring to FIG. 1, the packaging structure of the image sensor includes: a substrate 100 and an image sensor chip 300. The substrate 100 includes a light-transmitting area 110 and a non-light-transmitting area 120 surrounding the light-transmitting area 110, and the non-light-transmitting area 120 is provided with wiring lines 104. The substrate 100 includes a filter layer 101, and the filter layer 101 is located in a light-transmitting area 110 and a non-light-transmitting area 120 on the substrate 100. The image sensor chip 300 is flip-chip mounted on the side of the substrate 100 away from the filter layer 101. The image sensor chip 300 includes a sensing area 310 that is disposed toward the side of the substrate 100, and the sensing area 310 corresponds to the light-transmitting area 110.

Among them, the substrate 100 provides support and electrical support for the image sensor chip 300. The wiring line 104 may include, for example, at least one of electronic components such as resistors, inductors, capacitors, integrated circuit blocks, and optical components, and the wiring lines 104 may also include connecting wires between the electronic components.

The light-transmitting area 110 of the substrate 100 can transmit light, so that biometric light such as iris passes through the substrate 100 and is transmitted to the sensing area 310 of the image sensor chip 300. The non-transmissive area 120 can be arranged around the transmissive area 110 in various forms. Illustratively, FIG. 1 shows that the transmissive area 110 is located in the middle of the non-transmissive area 120. In other embodiments, the transmissive area may also be provided. The light zone 110 is located at other positions of the substrate 100, and can be determined according to the position of the image sensor chip 300 in the electronic device, the arrangement of the wiring line 104, and the alignment position of the image sensor chip 300 and the lens in practical applications.

The external circuit refers to the circuit structure electrically connected to the packaging structure of the image sensor chip. The external circuit may be, for example, a flexible printed circuit (FPC) integrated with other electronic components. The FPC circuit board may include an image processing chip. The image processing chip performs imaging according to the light information collected by the image sensor chip 300 to facilitate biometric identification.

The image sensor chip 300 may include a plurality of pixels 311 for collecting image sensing light information, and the plurality of pixels 311 constitute the sensing area 310 of the image sensor chip 300. The sensing area 310 corresponds to the light-transmitting area 110. Optionally, the light-transmitting area 110 completely exposes the sensing area 310, so that the infrared light is not blocked by the non-transmitting area of the substrate 100.

The filter layer 101 is disposed on the side where the pixel points 311 of the image sensor chip 300 collect light, and is used to filter the light transmitted to the image sensor chip 300. The filter layer 101 may be, for example, an infrared light filter layer 101 (Infrared Radiation, IR), and the infrared light filter layer 101 may transmit infrared light and filter light of other wavelength bands. The filter layer 101 is located in the light-transmitting area 110 and the non-light-transmitting area 120 on the substrate 100, that is to say, the filter layer 101 covers the light-transmitting

areas

110 and 120. Therefore, the light transmitted to the image sensor chip 300 will pass through the filter The layer 101 helps to improve the quality of image sensing. The outer edge of the filter layer 101 coincides with the epitaxial extension of the substrate 100. This arrangement allows the entire surface of the filter layer 101 to be formed on the substrate 100. There is no need to cut the filter layer 101 separately and then set it on the substrate. Conducive to simplifying the production process. Illustratively, the filter layer 101 may be plated on the substrate 100. Optionally, the thickness of the filter layer 101 is in the range of 100 um to 150 um. This configuration is not only beneficial to thin the packaging structure of the image sensor chip, but also can ensure the filtering effect of the filter layer 101.

According to the embodiment of the present application, the filter layer 101 is located on the substrate 100 and located in the light-transmitting area 110 and the non-light-transmitting area 120. The image sensor chip 300 is flip-chip mounted on the substrate 100 on the side away from the filter layer 101, and the sensing area 310 Disposed on the side facing the substrate 100, the sensing area 310 corresponds to the light-transmitting area 110, so that all light transmitted to the image sensor chip 300 will pass through the filter layer 101. In the related art, the optical filter in the electronic device is clamped on the lens, and the thickness of the optical filter is thicker to be able to be mechanically connected with the lens. In addition, the size of the clamped component is also large. Therefore, the existing The setting of the filter is not conducive to the miniaturization of electronic equipment. Different from the related art, the embodiment of the present application arranges the filter layer 101 in the packaging structure of the image sensor chip. Therefore, compared with the related art, on the one hand, the embodiment of the present application may adopt a bonding process to attach the filter layer to the package structure of the image sensor chip. 101 is bonded to the substrate 100. Since the bonding process requires a relatively low thickness of the filter layer 101, the thickness of the filter layer 101 can be set to be thinner, which is beneficial to the lighter and thinner package structure of the image sensor chip; On the other hand, the embodiment of the present application can adopt a bonding process without using a snap-on component, which avoids the snap-on component occupying the space of the electronic device. In summary, the packaging structure of the image sensor chip provided by the embodiments of the present application is beneficial to the miniaturization of electronic devices.

Continuing to refer to FIG. 1, in an embodiment of the present application, optionally, the base 100 further includes a light-transmitting substrate 102, the filter layer 101 is disposed on the surface of the light-transmitting substrate 102, and the base 100 is close to the side of the image sensor chip 300 A wiring line 104 is provided. The material of the light-transmitting substrate 102 may be glass, for example, and the structure of the light-transmitting substrate 102 + the filter layer 101 constitutes IR glass. The light-transmitting substrate 102 covers the light-transmitting area 110 and the non-light-transmitting area 120, plays a role of supporting the filter layer 101 and the wiring line 104, and improves the stability of the packaging structure of the image sensor chip.

Continuing to refer to FIG. 1, in an embodiment of the present application, optionally, the base 100 further includes a base material layer 103. The base material layer 103 may include, for example, a dielectric material layer. It is helpful to provide the base material layer 103 For the installation of the wiring line 104. In addition, since the base material layer 103 generally does not transmit light, the area covered by the base material layer 103 forms a non-transmissive area 120.

In the foregoing embodiments, the number of layers of the filter layer 101 is exemplarily shown as one layer, which is not a limitation of the present application. In other embodiments, the number of layers of the filter layer 101 can also be set to two as required. Layer or multiple layers. Hereinafter, a detailed description will be given assuming that the number of layers of the filter layer 101 is two.

FIG. 2 is a schematic diagram of another image sensor chip packaging structure provided by an embodiment of the application. Referring to FIG. 2, in an embodiment of the present application, optionally, the filter layer 101 includes a first filter layer and a second filter layer, and the first filter layer and the second filter layer are respectively disposed on the transparent layer. The front surface 130 and the back surface 140 of the optical substrate 102. Wherein, the front side 130 of the light-transmitting substrate 102 refers to the side of the light-transmitting substrate 102 away from the image sensor chip 300; the back side 140 of the light-transmitting substrate 102 refers to the side of the light-transmitting substrate 102 close to the image sensor chip 300. That is, the filter layer 101 provided on the front surface 130 of the transparent substrate 102 is called a first filter layer, and the filter layer 101 provided on the back surface 140 of the transparent substrate 102 is called a second filter layer. The material of the transparent substrate 102 may be, for example, glass, and the structure of the first filter layer + the transparent substrate 102 + the second filter layer constitutes IR glass. Exemplarily, the first filter layer and the second filter layer may be plated on the front surface 130 and the back surface 140 of the light-transmitting substrate 102, respectively. In the embodiment of the present application, both sides of the transparent substrate 102 include the filter layer 101. On the one hand, it is equivalent to increasing the thickness of the filter layer 101, which is beneficial to improve the filtering effect of the filter layer 101; on the other hand, the filter layer 101 is When the light layer 101 is plated on the light-transmitting substrate 102, stress will be generated on the surface of the light-transmitting substrate 102. The front 130 and back 140 of the light-transmitting substrate 102 are both coated with the filter layer 101 to balance the stress on the light-transmitting substrate 102 Therefore, it is beneficial to prevent warping of the filter layer 101 due to deformation of the light-transmitting substrate 102.

Continuing to refer to FIG. 2, in an embodiment of the present application, optionally, the wiring line 104 is disposed on the side of the second filter layer close to the image sensor chip 300, that is, the wiring line 104 is disposed on the IR glass close to the image sensor chip. 300 on the side. The arrangement of the embodiment of the application in this way not only makes the wiring line 104 closer to the image sensor chip 300, thereby facilitating the connection between the image sensor chip 300 and the wiring line 104; but also between the filter layer 101 and the light-transmitting substrate 102 There is no need to provide wiring lines, which facilitates the bonding of the filter layer 101 and the light-transmitting substrate 102, thereby reducing the process cost and improving the production efficiency.

In the foregoing embodiments, there are multiple ways to connect the image sensor chip 300 to the wiring line 104, for example, wire bonding or bump connection.

1 and FIG. 2, in an embodiment of the present application, optionally, the packaging structure of the image sensor chip further includes bumps 330, one end of the bumps 330 is electrically connected to the image sensor chip 300, the bumps 330 The other end is electrically connected to the wiring line 104.

Wherein, the image sensor chip 300 has conductive traces (not shown in the figure) electrically connected to the pixel points 311, and the conductive traces are electrically connected to the wiring lines 104 through bumps 330. The material of the bump 330 may be, for example, gold (Au), silver (Ag), aluminum (Al), titanium (Ti), or copper (Cu), and may be gold (Au). One end of the bump 330 is in contact with the image sensor chip 300. Illustratively, the image sensor chip 300 is provided with a pad 340 at a position corresponding to the bump 330, and the pad 340 is in contact with one end of the bump 330. The bump 330 and the pad 340 may be electrically connected by soldering or heating and melting. The other end of the bump 330 abuts against the wiring line 104. For example, the wiring line 104 is provided with a pad (not shown in the figure) at a position corresponding to the bump 330, and the pad abuts against the other end of the bump 330. The bump 330 and the pad on the wiring line 104 can be electrically connected by soldering or heating and melting.

Optionally, the number of bumps 330 is multiple, corresponding to multiple pins of the image sensor chip 300 respectively. The distribution relationship between the bumps 330 and the image sensor chip 300 is that a plurality of bumps 330 are symmetrically distributed on both sides of the image sensor chip 300, or a plurality of bumps 330 surround the periphery of the image sensor chip 300.

FIG. 3 is a schematic diagram of yet another image sensor chip packaging structure provided by an embodiment of the application. 3, in an embodiment of the present application, optionally, the packaging structure of the image sensor chip further includes a bonding pad 1041 located in the non-transmissive area 120, the bonding pad 1041 is electrically connected to the wiring line 104, and the bonding pad 1041 The vertical distance between the side away from the light-transmitting substrate 102 and the light-transmitting substrate 102 is smaller than the vertical distance between the side of the chip away from the light-transmitting substrate 102 and the light-transmitting substrate 102.

The bonding pad 1041 may be, for example, a section of wire or a pad in the wiring line 104, that is, the bonding pad 1041 may be formed by the wiring line 104 and is a part of the wiring line 104. The pad 1041 is used for electrical connection between the wiring line 104 and the external circuit, and the bump 330 is used for the electrical connection between the image sensor chip 300 and the wiring line 104, so that the image sensor chip 300 is connected to the external circuit through the wiring line 104 Carry out the transmission of electrical signals. In the embodiment of the present application, the vertical distance between the side of the solder pad 1041 away from the transparent substrate 102 and the transparent substrate 102 is smaller than the vertical distance between the side of the chip away from the transparent substrate 102 and the transparent substrate 102, that is, the size of the solder pad 1041 Without exceeding the image sensor chip 300, the thickness of the packaging structure of the image sensor chip is the sum of the thickness of the substrate 100, the bumps 330 and the sensor chip 300.

In an embodiment of the present application, optionally, the number of solder pads 1041 is multiple, which respectively correspond to multiple connection terminals of the external circuit. The distribution relationship between the bonding pads 1041 and the image sensor chip 300 is that a plurality of bonding pads 1041 are symmetrically distributed on one side and two sides of the image sensor chip 300, or a plurality of bonding pads 1041 surround the periphery of the image sensor chip 300.

In the foregoing embodiments, there are many ways to electrically connect the solder pad 1041 with the external circuit, such as soldering through solder balls, or connecting through conductive glue. In an embodiment of the present application, optionally, the solder pad 1041 is used to electrically connect with an external circuit through conductive glue. Among them, the conductive adhesive refers to a colloid with conductive properties, such as an anisotropic conductive film (ACF). Compared with solder balls, the thickness of the conductive adhesive is thinner, which is beneficial to reduce the thickness of the package structure of the image sensor chip. Exemplarily, if solder balls are used as the connection medium between the wiring circuit 104 and the external circuit, the overall thickness of the package structure of the image sensor chip is about 800um, and if the conductive glue is used as the connection medium between the wiring circuit 104 and the external circuit, the optical filter layer is included. The thickness of the packaging structure of the image sensor chip of 101 is less than or equal to 300 um. It can be seen that the embodiment of the present application can reduce the thickness of the packaging structure of the image sensor chip.

In the foregoing embodiments, there are multiple structural forms of the solder pad 1041, and several of the structural forms will be described below, but they are not intended to limit the application.

FIG. 4 is a schematic diagram of yet another image sensor chip packaging structure provided by an embodiment of the application, and FIG. 5 is a schematic diagram of the structure of FIG. 4 along the direction C. Referring to FIGS. 4 and 5, in an embodiment of the present application, optionally, the substrate 100 further includes an insulating layer 400 covering the wiring line 104, and the insulating layer 400 exposes a part of the wiring line 104 to constitute a bonding pad 1041. Wherein, for example, the insulating layer 400 includes an opening 401, and the opening 401 exposes a part of the wiring line 104, thereby forming a bonding pad 1041. In the embodiment of the application, an insulating layer 400 is provided to cover the wiring line 104, and a part of the insulating layer 400 that exposes the wiring line 104 constitutes a solder pad 1041. On the one hand, it is beneficial to avoid short-circuiting of other parts of the wiring line 104 with the external circuit except for the solder pad 1401. On the other hand, the arrangement of the insulating layer 400 is beneficial to provide support for the packaging structure of the image sensor chip, and improve the stability of the packaging structure of the image sensor chip.

FIG. 6 is a schematic diagram of yet another image sensor chip packaging structure provided by an embodiment of the application. Referring to FIG. 6, in an embodiment of the present application, optionally, the soldering pad 1041 includes a first soldering pad 1041A and a second soldering pad 1041B; the first soldering pad 1041A is located on the second soldering pad 1041B away from the light-transmitting area 110 One side of the first pad 1041A is located outside of the second pad 1041B. An insulating layer 400 is provided between the first bonding pad 1041A and the second bonding pad 1041B. Exemplarily, the second soldering pad 1041B is located in the opening of the insulating layer 400, corresponding to the position of the second soldering pad 1041B, and the connecting terminal of the external circuit is provided with bumps so that the connecting terminal can be connected to the second soldering pad 1041B. Together, it facilitates the fixed connection between the wiring line 104 and the external circuit.

In an embodiment of the present application, optionally, the first bonding pad 1041A and the second bonding pad 1041B are electrically connected. In the embodiment of the application, in addition to the first bonding pad 1041A, the second bonding pad 1041B is also provided, which is equivalent to increasing the contact area between the first bonding pad 1041A and the external circuit, and further improves the connection between the wiring line 104 and the external circuit. The stability of the connection between.

Continuing to refer to FIG. 6, in an embodiment of the present application, optionally, the side of the first bonding pad 1041A away from the second bonding pad 1041B is exposed. That is, the side surface of the first solder pad 1041A away from the second solder pad 1041B is not provided with the insulating layer 400. The arrangement of the embodiment of the present application makes the first solder pad 1041A have a larger operating space for conductive adhesive connection, reduces the difficulty of operation, and facilitates the conductive adhesive to adhere the solder pad 1041 and the external circuit more firmly.

FIG. 7 is a schematic diagram of yet another image sensor chip packaging structure provided by an embodiment of the application. Referring to FIG. 7, in an embodiment of the present application, optionally, an insulating layer 400 is provided on the side of the wiring line 104 close to the light-transmitting area 110, that is, an insulating layer 400 is also provided on the inner side of the wiring line 104. Compared with the uneven surface of the wiring line 104, the surface of the insulating layer 400 is flatter, which facilitates the reflection of the biometric light through the surface of the insulating layer 400 to the sensing area 310 of the image sensor chip 300.

FIG. 8 is a schematic diagram of yet another image sensor chip packaging structure provided by an embodiment of the application. Referring to FIG. 8, in an embodiment of the present application, optionally, a sealant 500 is provided on the periphery of the image sensor chip 300, and the sealant 500 seals the image sensor chip 300 and the substrate 100. The embodiment of the present application is arranged in this way, on the one hand, it can prevent the sensing area 311 of the image sensor chip 300 from being contaminated by external water vapor; on the other hand, the sealant 500 can prevent the image sensor chip 300 from falling off the substrate 100.

In the above-mentioned embodiment, if solder balls are used to electrically connect the wiring circuit 104 and the external circuit, the packaging structure of the image sensor chip is severely heated during the soldering process, and the sealant 500 with better air permeability needs to be used. However, the sealant The good air permeability of 500 has the effect of reduced barrier performance, and the sensing area 311 of the image sensor chip 300 is susceptible to contamination by external water vapor. If the bonding pad 1041 and conductive adhesive are used to electrically connect the wiring line 104 with the external circuit, the heat generated in the bonding process can be reduced, and the heat generated by the packaging structure of the image sensor chip can be avoided, so that the air tightness can be selected A better sealant 500 is beneficial to improve the ability of the sealant 500 to isolate water vapor.

Claims

An image sensor chip packaging structure, including:

A substrate, the substrate includes a light-transmitting area and a non-transmitting area surrounding the light-transmitting area, the non-transmitting area is provided with wiring lines; the substrate includes a filter layer, the filter layer is located on the substrate The light-transmitting area and the non-light-transmitting area on the upper part;

An image sensor chip flip-chip arranged on the side of the substrate away from the filter layer, the image sensor chip includes a sensing area, the sensing area is disposed toward one side of the substrate, the sensing area and the The light-transmitting area corresponds.
The image sensor chip packaging structure according to claim 1, wherein the base further comprises a light-transmitting substrate, the filter layer is disposed on a surface of the light-transmitting substrate, and the base is close to the image sensor chip The wiring line is provided on one side.
The packaging structure of the image sensor chip according to claim 2, wherein the filter layer comprises a first filter layer and a second filter layer, and the first filter layer and the second filter layer They are respectively arranged on the front and back of the light-transmitting substrate.
3. The image sensor chip packaging structure of claim 3, wherein the wiring line is disposed on a side of the second filter layer close to the image sensor chip.
The packaging structure of the image sensor chip according to claim 1, wherein the thickness of the filter layer ranges from 100 um to 150 um.
The packaging structure of the image sensor chip according to claim 1, further comprising a bump, one end of the bump is electrically connected to the image sensor chip, and the other end of the bump is electrically connected to the wiring line.
The image sensor chip package structure according to claim 2, further comprising solder pads located in the non-transmissive area, the solder pads are electrically connected to the wiring lines, and the solder pads are away from the light-transmitting substrate The vertical distance between one side of the chip and the light-transmitting substrate is smaller than the vertical distance between the side of the chip away from the light-transmitting substrate and the light-transmitting substrate.
8. The packaging structure of the image sensor chip according to claim 7, wherein the bonding pad is used for electrically connecting with an external circuit through a conductive glue.
8. The packaging structure of the image sensor chip according to claim 7, wherein the substrate further comprises an insulating layer covering the wiring line;

A part of the insulating layer that exposes the wiring line constitutes the bonding pad.
9. The image sensor chip package structure according to claim 9, wherein the solder pad comprises a first solder pad and a second solder pad; the first solder pad is located on the second solder pad away from the light-transmitting One side of the area

The insulating layer is provided between the first solder pad and the second solder pad.
10. The image sensor chip packaging structure of claim 10, wherein the first bonding pad is electrically connected to the second bonding pad.
The package structure of the image sensor chip according to claim 10 or 11, wherein the side of the first bonding pad away from the second bonding pad is exposed.
9. The packaging structure of the image sensor chip according to claim 9, wherein the insulating layer is provided on a side of the wiring line close to the light-transmitting area.
8. The packaging structure of the image sensor chip according to claim 7, wherein the bonding pads are provided on one side or both sides of the peripheral area of the chip.
8. The packaging structure of the image sensor chip according to claim 7, wherein the thickness of the packaging structure is less than or equal to 300um.
The packaging structure of the image sensor chip according to claim 1, wherein a sealant is provided on the periphery of the image sensor chip, and the sealant seals the image sensor chip and the substrate.