WO2022237524A1 - 半导体腔室及半导体设备 - Google Patents
半导体腔室及半导体设备 Download PDFInfo
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- WO2022237524A1 WO2022237524A1 PCT/CN2022/089228 CN2022089228W WO2022237524A1 WO 2022237524 A1 WO2022237524 A1 WO 2022237524A1 CN 2022089228 W CN2022089228 W CN 2022089228W WO 2022237524 A1 WO2022237524 A1 WO 2022237524A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 230000007246 mechanism Effects 0.000 claims abstract description 38
- 238000007789 sealing Methods 0.000 claims description 20
- 238000002955 isolation Methods 0.000 claims description 17
- 230000005284 excitation Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 description 29
- 230000008569 process Effects 0.000 description 27
- 238000005516 engineering process Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- 238000009434 installation Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Definitions
- the present application relates to the field of semiconductor processing, in particular to a semiconductor chamber and semiconductor equipment.
- Sputtering is a commonly used semiconductor processing technology.
- the process is to bombard the target with charged particles, so that atoms, molecules or clusters escape from the surface of the target, and the escaped atoms, molecules or clusters are deposited on the workpiece to be processed. , so that a thin film can be formed on the object to be processed (such as a wafer).
- a magnetic field adjustment mechanism which controls the distribution of the energetic particles by adjusting the magnetic field distribution in the semiconductor chamber.
- the present application proposes a semiconductor chamber and semiconductor equipment, which can solve the problem of inconvenient adjustment of the magnetic field in the semiconductor chamber in the related art.
- the present application proposes a semiconductor chamber, including a chamber main body and a magnetic field adjustment mechanism, and the magnetic field adjustment mechanism includes a bracket and a plurality of magnetic parts, wherein:
- the bracket is arranged outside the chamber body, the plurality of magnetic parts are movably arranged on the bracket, the plurality of magnetic parts are arranged around the chamber body, and each of the magnetic parts can switch between a first position and a second position;
- the bracket is used to make the magnetic field formed by the magnetic part outside the chamber main body when the magnetic part is in the first position; when the magnetic part is in the second position Next, the magnetic field formed by the magnetic member is at least partially located within the chamber body.
- the present application provides a semiconductor device, including the above-mentioned semiconductor chamber.
- the semiconductor chamber disclosed in the embodiment of the present application improves the related technology, so that a plurality of magnetic parts surrounding the main body of the chamber are movably arranged on the support, so that each magnetic part can be in the first position and the second position relative to the support. Switching between positions, the bracket is used to make the magnetic field formed by the magnetic part outside the chamber body when the magnetic part is in the first position; when the magnetic part is in the second position, the magnetic field formed by the magnetic part At least a part is located inside the chamber main body, so that the magnetic field applied by the entire magnetic field adjustment mechanism to the chamber main body can be flexibly adjusted by adjusting the position of the magnetic piece.
- the semiconductor chamber disclosed in the embodiment of the present application can undoubtedly make it easier to adjust the magnetic field applied to the chamber body. Relatively simple and convenient.
- FIG. 1 and FIG. 2 are schematic structural diagrams of a semiconductor chamber according to an embodiment of the present application when the magnetic parts are in different positions;
- Fig. 3 and Fig. 4 are respectively the structural representation of the semiconductor chamber of another embodiment of the present application when the magnetic parts are in different positions;
- FIG. 5 and FIG. 6 are schematic structural diagrams of the semiconductor chamber in another embodiment of the present application when the magnetic parts are in different positions;
- Fig. 7 is a schematic structural diagram of a specific magnetic field adjustment mechanism disclosed in the embodiment of the present application.
- Fig. 8 is a sectional view along A-A direction of Fig. 7;
- Fig. 9 is a top view of the first magnetic conduction ring
- Fig. 10 is a B-B direction sectional view of Fig. 9;
- Figure 11 is a top view of the magnetic isolation ring
- Fig. 12 is a C-C cross-sectional view of Fig. 11;
- Fig. 13 is a top view of the second magnetic conducting ring
- Figure 14 is a D-D cross-sectional view of Figure 13;
- Fig. 15 is a schematic diagram of the magnetic field generated when the magnetic member is in the second position
- Fig. 16 is a schematic diagram of the magnetic field generated when the magnetic member is in the first position
- FIG. 17 is a schematic structural diagram of a semiconductor chamber according to another embodiment of the present application.
- 210-bracket 211-first magnetic member, 211′-first magnetic member, 211a-first groove, 211b-first air hole, 212-magnetic isolation member, 212’-magnetic isolation member, 212a-pass Hole, 213-second magnetic guide, 213'-second magnetic guide, 213a-second groove, 213b-second air hole, 210'-bracket, 201-bracket, 201'-bracket, 201"-bracket ,
- 300-magnetron assembly 400-target assembly, 500-carrying base, 600-DC power supply, 700-bias power supply.
- the present application discloses a semiconductor chamber, and the semiconductor chamber disclosed in the present application can be applied to semiconductor devices.
- the semiconductor chamber disclosed in the present application includes a chamber body 100 and a magnetic field adjustment mechanism 200 .
- the chamber main body 100 is a main component of a semiconductor chamber, and the chamber main body 100 can accommodate workpieces to be processed and perform semiconductor processes on the workpieces to be processed.
- the workpiece to be processed may be a wafer or a wafer, and the application does not limit the specific type of the workpiece to be processed.
- the chamber body 100 may provide a mounting base for other at least some components of the semiconductor chamber.
- the magnetic field adjusting mechanism 200 is installed on the chamber main body 100 .
- the magnetic field adjustment mechanism 200 can be used to adjust the magnetic field applied to the semiconductor chamber, and then change the magnetic field distribution, so that the magnetic field distribution in the semiconductor chamber can match the process conditions for the workpiece to be processed.
- the magnetic field adjustment mechanism 200 includes a bracket 210 and a plurality of magnetic pieces 220 , and the bracket 210 is disposed outside the chamber main body 100 .
- the bracket 210 may be fixedly connected to the chamber body 100, and the bracket 210 may also be flexibly connected to the chamber body 100, which is not limited in this application.
- Each magnetic piece 220 can generate a magnetic field.
- the magnetic member 220 may be a permanent magnet.
- the bracket 210 provides an installation base for the magnetic components 220 .
- a plurality of magnetic components 220 are movably disposed on the bracket 210 , and each magnetic component 220 can switch between a first position and a second position.
- a plurality of magnetic pieces 220 are arranged around the chamber main body 100.
- the bracket 210 is used to make the magnetic field formed by the magnetic member 220 outside the chamber main body 100 when the magnetic member 220 is in the first position. At this time, the magnetic field formed by the magnetic member 220 at the first position will not affect the process gas in the chamber body 100 , and the magnetic member 220 at the first position is in a non-working state.
- the bracket 210 is also used to make at least part of the magnetic field formed by the magnetic member 220 in the second position inside the chamber body 100 when the magnetic member 220 is in the second position.
- the magnetic field formed by the magnetic member 220 at the second position can act on the process gas in the chamber main body 100 , and the magnetic member 220 at the second position is in a working state.
- the semiconductor chamber disclosed in the embodiment of the present application includes a plurality of magnetic parts 220 , and each magnetic part 220 can switch between the first position and the second position.
- the plurality of magnetic elements 220 can form more diverse magnetic fields, thereby more flexibly matching the corresponding process conditions of the semiconductor chamber.
- the chamber main body 100 can be used to accommodate workpieces to be processed, and when the magnetic member 220 in the magnetic field adjustment mechanism 200 is switched between the first position and the second position, the magnetic field generated by the magnetic member 220 can be Acting inside the chamber body 100 or outside the chamber body 100 .
- the magnetic field generated by the magnetic pieces 220 can be at least Part of it acts in the chamber main body 100, so as to achieve the purpose of adjusting the process gas distribution.
- the magnetic field generated by the magnetic pieces 220 can not be changed Then act in the chamber main body 100 .
- the first position and the second position of the magnetic member 220 shown in FIG. 1 and FIG. 2 involved in the present application are only schematic illustrations, and are not limited thereto.
- the magnetic member 220 As long as the position of the magnetic member 220 is changed, the magnetic member 220 is in the At the first position, the generated magnetic field will not affect the process gas in the chamber main body 100, which is the first position, and the magnetic member 220 in the first position is in a non-working state at this time; by changing the position of the magnetic member 220 , realize that the magnetic part 220 is in another position, at least part of the formed magnetic field is in the chamber main body 100, that is, the second position, and the magnetic part 220 in the second position is in the working state at this time.
- the semiconductor chamber disclosed in the embodiment of the present application improves the related technology, so that a plurality of magnetic parts 220 surrounding the chamber main body 100 are movably arranged on the bracket 210, and each magnetic part 220 To switch between the first position and the second position, the bracket 210 is used to make the magnetic field formed by the magnetic member 220 outside the chamber main body 100 when the magnetic member 220 is in the first position; In the case of position, the magnetic field formed by the magnetic part 220 is at least partly located inside the chamber body 100, so that the magnetic field applied by the entire magnetic field adjustment mechanism 200 to the chamber body 100 can be flexibly adjusted by adjusting the position of the magnetic part 220. Compared with adjusting the magnetic field by removing or increasing the number of magnetic parts in the related art, the semiconductor chamber disclosed in the embodiment of the present application can undoubtedly make it easier to adjust the magnetic field applied to the chamber body 100 ,convenient.
- the semiconductor chamber disclosed in the embodiment of the present application further includes a magnetron assembly 300 , a target assembly 400 , a supporting base 500 , an excitation power supply 600 and a bias power supply 700 .
- the excitation power supply 600 is connected to the target assembly 400
- the carrying base 500 is arranged in the chamber main body 100
- the carrying base 500 is used to carry the workpiece to be processed
- the bias power supply 700 is connected to the carrying base 500 .
- the magnetron assembly 300 ionizes the process gas in the chamber body 100 to form charged particles, and under the action of the electric field force generated by the excitation power supply 600, the charged particles will bombard the target assembly 400 and form a target material particles. Under the action of the electric field force of the bias power supply 700, the target particles will move towards the direction close to the carrier base 500, and finally deposit on the workpiece to be processed on the carrier base 500, and finally form a deposition layer (that is, a thin film), reaching the process Require.
- the excitation power supply 600 is, for example, a DC power supply.
- the semiconductor chamber may further include a driving mechanism capable of driving the magnetic member 220 to move, thereby enabling the magnetic member 220 to switch between the first position and the second position.
- the semiconductor chamber disclosed in the embodiment of the present application may further include a controller, and the controller can adaptively adjust the positions of the plurality of magnetic members 220 according to the power of the semiconductor chamber. Specifically, the controller can adjust the position of the magnetic member 220 by controlling the driving mechanism, and finally achieve adaptive adjustment of the magnetic field applied by the entire magnetic field adjustment mechanism 200 to the chamber body 100 according to the power of the semiconductor chamber.
- the control here is a known technology, and the detailed process will not be repeated here.
- the magnetic member 220 can move on the bracket 210, and then switch between the first position and the second position, finally realizing the adjustment of the magnetic field.
- the semiconductor chamber disclosed in the embodiment of the application includes a driving mechanism, and the driving mechanism can be set On the bracket 210', the driving mechanism is connected with the magnetic part 220', and the driving mechanism drives the magnetic part 220' to move.
- the driving mechanism drives the magnetic piece 220 ′ to move, so that when the magnetic piece 220 ′ is in the first position, the magnetic field generated by the magnetic piece 220 ′ can be located in the chamber main body because the magnetic piece 220 ′ is far away from the chamber main body 100 . 100, as shown in Figure 3.
- the magnetic field generated by the magnetic part 220' can be located at least partially inside the chamber main body 100 because the magnetic part 220' is close to the chamber main body 100, As shown in Figure 4. It can be seen that the magnetic piece 220 ′ is driven to move in a wide range by the driving mechanism, thereby changing the magnetic field generated by the magnetic piece 220 ′ away from the chamber body 100 outside the chamber body 100 or close to the chamber body 100 . Inside the chamber body 100 .
- the driving mechanism can be a hydraulic expansion unit, a pneumatic expansion unit, a linear motor, etc.
- the driving mechanism can also be of other structures, and the embodiment of the present application does not limit the specific type of the driving mechanism.
- the bracket 201 may include a first magnetic conduction member 211, a magnetic isolation member 212 and a second magnetic conduction member 213 that are butted in sequence.
- the first The magnetic conducting element 211 , the magnetic isolating element 212 and the second magnetic conducting element 213 are all disposed on the chamber main body 100 . Since both the first magnetically permeable member 211 and the second magnetically permeable member 213 can conduct magnetically, the magnetically insulating member 212 is arranged between the first magnetically permeable member 211 and the second magnetically permeable member 213, and then the first magnetically permeable member 211 and the second magnetically permeable member 213 are connected together. The second magnetically permeable part 213 is isolated, and finally prevents the generation of magnetic flux between the first magnetically permeable part 211 and the second magnetically permeable part 213 .
- the first magnetic element 211 , the magnetic isolation element 212 and the second magnetic element 213 are all in contact with the magnetic element 202 .
- the two magnetic poles of the magnetic member 202 are in contact with the first magnetically permeable member 211 and the second magnetically permeable member 213 respectively, which is ultimately equivalent to making the magnetic member 202
- the first magnetically permeable member 211 and the second magnetically permeable member 213 forms a magnetic structure with a larger volume, which can form a magnetic field in a larger spatial range, and then at least part of the magnetic field can be located in the chamber body 100 .
- the magnetic member 202 When the magnetic member 202 is in the first position, it can be in contact with the magnetic member 212 and the magnetic member 202, and at the same time, one of the first magnetic member 211 and the second magnetic member 213 is in contact with the magnetic member 213.
- the magnetic part 202 is in contact; or, the magnetic part 202 is only in contact with one of the first magnetic-conductive part 211 and the second magnetic-conductive part 213 .
- the magnetic element 202 is equivalent to forming a smaller magnetic structure with the first magnetically permeable element 211 or the second magnetically permeable element 213 .
- a magnetic structure with a small volume can form a magnetic field within a small space range, thereby enabling the magnetic field to be located outside the chamber main body 100 .
- the present invention is not limited thereto, by changing the size of the magnetic part 202, the first magnetic conducting part 211, the magnetic isolating part 212 and the second magnetic conducting part 213 in the first direction, the flexible adjustment between the four can be realized.
- the contact relationship realizes the adjustment and control of the magnetic member 202 at the first position and the second position.
- the position of the magnetic field generated by the magnetic member 202 can be adjusted, which can make the adjustment of the magnetic field more convenient without making the magnetic member 202 move a larger distance , not only can reduce the energy consumption of the driving mechanism, but also facilitate the miniaturization of the bracket 201 , making the volume of the entire magnetic field adjusting mechanism 200 smaller, reducing its occupied space, and facilitating its arrangement on the chamber body 100 .
- the bracket 201 ′ may be a ring structure, as shown in FIGS. 7 to 16 , the ring structure is arranged around the chamber main body 100 .
- This kind of ring structure is more beneficial to serve as the installation basis of the magnetic parts 202', and finally achieves the purpose of a plurality of magnetic parts 202' being arranged around the chamber main body 100.
- the first magnetically conductive part 211' is the first magnetically conductive ring
- the magnetically isolated part 212' is a magnetically isolated ring
- the second magnetically conductive part 213' It is the second magnetic permeable ring, as shown in Fig. 7 to Fig. 16 .
- the first magnetic conduction ring, the magnetic isolation ring and the second magnetic conduction ring can be coaxial and arranged around the chamber main body 100, and a plurality of magnetic parts 202' can be arranged along the circumferential direction of the first magnetic conduction ring, and can be connected with the first magnetic conduction ring.
- the magnetic ring, the magnetic isolation ring and the second magnetic conduction ring are flexibly connected.
- this structure by adjusting the shapes of the magnetic spacer 212', the first magnetic permeable part 211' and the second magnetic permeable part 213', it can form a ring structure that is conducive to the installation of multiple magnetic parts 202', and at the same time The cooperation between the first magnetic conducting part 211', the magnetic isolating part 212' and the second magnetic conducting part 213' and the magnetic part 202' is not affected.
- brackets 201 there can be multiple brackets 201 ", and multiple brackets 201" are spaced around the chamber body 100, and each magnetic piece 202" is correspondingly arranged on the bracket 201" . That is to say, the number of brackets 201 ′′ is the same as the number of magnetic pieces 202 ′′, and they are provided in a one-to-one correspondence, and each bracket 201 ′′ is independent for individually adjusting the position of the corresponding magnetic piece 202 ′′.
- multiple magnetic parts 202" can also be arranged around the chamber main body 100. This structure is beneficial The flexibility of installation also facilitates the replacement or maintenance of a single damaged bracket 201 ′′ or magnetic part 202 ′′.
- the first magnetically permeable part 211', the magnetically insulating part 212' and the second magnetically permeable part 213' are sequentially stacked along the first direction, and the first magnetically permeable part 211' (for example, it is separated from the magnetically separated
- the surface opposite to the part 212') is provided with a first groove 211a, as shown in Figure 10
- the magnetic isolation part 212' is provided with a through hole 212a, and the through hole 212a penetrates, for example, along the above-mentioned first direction, as shown in Figure 12,
- the second magnetic conducting member 213' (for example, its surface opposite to the magnetic isolating member 212') is provided with a second groove 213a, as shown in Figure 14, the first groove 211a, the through hole 212a and the second groove 213a corresponding settings.
- the magnetic piece 202' can be slidably arranged in the inner cavity along the above-mentioned first direction, and the above-mentioned first direction is a circle formed by a plurality of magnetic pieces 202' axis direction.
- the magnetic part 202' is disposed in the inner cavity, which can be protected by the bracket 201', and at the same time, it can better prevent the external environment from interfering with the movement of the magnetic part 202'.
- the bracket 201' can be directly provided with an inner cavity, and it is not limited that the inner cavity must be formed by the first magnetic conductive part 211', the second magnetic conductive part 213' and the magnetic isolation part 212'.
- the magnetic member 202' can be switched between the first position and the second position under the drive of the driving mechanism.
- drive mechanisms There are many types of drive mechanisms.
- the first end surface of the bracket 201' is provided with a first air hole 211b.
- the second end surface of the bracket 201' is provided with a second air hole.
- the air hole 213b, as shown in FIG. 14 , the first air hole 211b and the second air hole 213b are both in communication with the inner cavity.
- the first end surface of the bracket 201' may be the surface of the first magnetic conducting part 211' facing away from the second magnetic conducting part 213'
- the second end surface of the bracket 201' may be the surface of the second magnetic conducting part 213' facing away from the second magnetic conducting part 213'.
- the surface of a magnetically conductive member 211' is shown in FIG. 8 .
- the magnetic member 202' When the first air hole 211b is inflated into the inner cavity, and the second air hole 213b is deflated, the magnetic member 202' can move from the first position to the second position; when the second air hole 213b is inflated into the inner cavity, and the first When the air hole 211b is out of air, the magnetic member 202' can move from the second position to the first position.
- the first gas hole 211b can be communicated with the gas source, and the gas from the gas source can enter the inner cavity through the first gas hole 211b and act on the first side of the magnetic part 202', and finally the magnetic part The 202' can move to the second position under the push of the gas. During this process, the movement of the magnetic part 202' will push the gas located on the second side of the magnetic part 202' in the inner cavity to be discharged from the second air hole 213b.
- the second air hole 213b can be communicated with the gas source, and the gas from the gas source can enter the inner cavity through the second air hole 213b and act on the second side of the magnetic part 202', and finally the magnetic part 202' is in the gas source. It can move to the first position under the push of the magnetic member 202 ′. During this process, the movement of the magnetic member 202 ′ can push the gas located on the first side of the magnetic member 202 ′ in the inner cavity to be discharged from the first air hole 211 b.
- the magnetic member 202' isolates the inner cavity along the first direction to form a first sub-inner cavity and a second sub-inner cavity, and the surface of the first magnetic-conductive member 211' facing away from the second magnetic-conductive member 213'
- a first air hole 211b communicating with the first sub-inner cavity is provided. As shown in FIG. The second air hole 213b.
- the magnetic member 202' can move from the first position to the second position;
- the magnetic member 202' can move from the second position to the first position.
- the first air hole 211b can be communicated with the gas source, and the gas from the gas source can enter the first sub-inner cavity through the first air hole 211b and act on the first side of the magnetic member 202', Finally, the magnetic part 202' can move to the second position under the push of the gas. During this process, the movement of the magnetic part 202' will push the gas located on the second side of the magnetic part 202' in the second sub-chamber from the second air hole. 213b discharge.
- the second gas hole 213b can be communicated with the gas source, and the gas of the gas source can enter the second sub-inner cavity through the second gas hole 213b, and act on the second side of the magnetic part 202', and finally the magnetic part 202 ' can move to the first position under the push of the gas.
- the movement of the magnetic part 202' can push the gas located on the first side of the magnetic part 202' in the first sub-chamber to be discharged from the first air hole 211b.
- the structure of the bracket 201' is changed, and the gas drives the magnetic member 202' to switch between the first position and the second position. Since the semiconductor chamber is equipped with more gas sources, the above-mentioned driving structure is easier to fully utilize the existing gas source structure of the semiconductor chamber for driving, which is conducive to improving the utilization rate of the existing components of the semiconductor chamber, and at the same time The structural improvement is small, and it has strong practicability.
- the magnetic field adjustment mechanism 200 can also include a first sealing ring 230 , as shown in FIG. 8 , the first sealing ring 230 is sleeved on the magnetic member 202 ′, and the first sealing ring 230 is sealed between the magnetic member 202 ′ and the inner wall of the cavity.
- the number of first sealing rings 230 is the same as the number of magnetic parts 202', and each first sealing ring 230 is sleeved on each magnetic part 202' in a one-to-one correspondence, and the first sealing rings 230 are used to The gap between the magnetic member 202' and the inner wall of the cavity is sealed.
- Such a structure is beneficial to the isolation of spaces on opposite sides of the magnetic member 202 ′, so as to avoid gas blow-by between them and affect the driving of the magnetic member 202 ′.
- the magnetic isolating member 212 ′ and the first magnetically permeable member 211 ′ are between the two opposite surfaces, and are respectively located at 212 a close to the inner and outer peripheral edges of the magnetic isolating member 212 ′.
- Two second sealing rings 240 are arranged on both sides, as shown in FIG. 8 , and/or, between the two surfaces of the magnetic isolating member 212 ′ and the second magnetic conducting member 213 ′ opposite to each other, and are respectively located at 212 a close to
- Two third sealing rings 250 are provided on both sides of the inner periphery and the outer periphery of the magnetic isolation member 212 ′, as shown in FIG. 8 .
- Both the second sealing ring 240 and the third sealing ring 250 can improve the sealing performance between the abutting surfaces, which in turn is beneficial to improve the isolation effect between the inner cavity and the external environment, and avoid passing through the gap between the abutting surfaces during the gas drive process.
- the escape of the assembly gap is also conducive to improving the driving effect on the magnetic member 202'.
- the magnetic member 202' when the magnetic member 202' is in the first position, the magnetic member 202' is in limiting contact with the bottom wall of the first groove 211a.
- Such a structure enables the bottom wall of the first groove 211a to limit the magnetic part 202' during the driving process of the magnetic part 202', preventing the magnetic part 202' from moving excessively. That is to say, in this case, the first groove 211a can not only play a position-limiting role, but also can play a role of a part of the structure surrounding the inner cavity.
- the magnetic member 202' when the magnetic member 202' is in the second position, the magnetic member 202' is in limiting contact with the bottom wall of the second groove 213a.
- This structure enables the bottom wall of the second groove 213a to limit the magnetic component 202' during the driving process of the magnetic component 202', preventing the magnetic component 202' from moving excessively. That is to say, in this case, the second groove 213a can not only play a position-limiting role, but also can play a role of a part of the structure surrounding the inner cavity.
- the bracket does not have to be provided with an inner cavity. Please refer to FIG. 5 again.
- the semiconductor chamber shown in FIG. Some are located outside the bracket 201 .
- the present application also proposes a semiconductor device, including the above-mentioned semiconductor chamber.
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Abstract
本申请公开一种半导体腔室，包括腔室主体和磁场调节机构，磁场调节机构包括支架和多个磁性件，其中：支架设于腔室主体之外，多个磁性件活动地设于支架上，多个磁性件环绕腔室主体设置，每个磁性件均可在第一位置与第二位置之间切换，支架用于在磁性件处于第一位置的情况下，使磁性件形成的磁场位于腔室主体之外；在磁性件处于第二位置的情况下，使磁性件形成的磁场至少部分位于腔室主体之内。上述方案能够解决半导体腔室内的磁场强度存在调节不方便的问题。本申请还公开一种半导体设备。
Description
本申请涉及半导体加工领域，特别涉及一种半导体腔室及半导体设备。
溅射是一种常用的半导体加工工艺，该工艺是通过荷能粒子轰击靶材，使得靶材表面逸出原子、分子或团束，逸出的原子、分子或团束沉积到待加工件上，从而能够在待加工件(例如晶圆)上形成薄膜。为了使荷能粒子撞击靶材后在待加工件上形成的薄膜均匀，需要引入磁场调节机构，磁场调节机构通过调节半导体腔室内的磁场分布状况来控制荷能粒子的分布。
近些年来，用垂直互连技术在高深宽比的通孔中沉积电介质层和金属层的重要性和挑战性日益显现。特别是对于深孔填充领域的应用，一方面拓展了物理气相沉积(Physical Vapor Deposition，以下简称PVD)设备的应用领域，另一方面也对PVD设备提出了更高的要求。为了满足高深宽比的孔隙的填充，长程PVD技术被广泛应用，并引入磁场调节机构调节薄膜沉积的均匀性。在相关技术中，磁场调节机构调节半导体腔室内的磁场分布状况的方式是通过使磁场调节机构中的磁性件可拆卸，具体的，通过安装磁性件和拆卸磁性件的方式来调节磁场分布，这样的调节方式存在调节不方便的问题，进而会导致调节效率低下，进而会导致半导体加工工艺的加工效率低下。
发明内容
本申请提出一种半导体腔室及半导体设备，能够解决相关技术对半导体腔室内的磁场调节存在不方便的问题。
第一方面，本申请提出一种半导体腔室，包括腔室主体和磁场调节机构， 所述磁场调节机构包括支架和多个磁性件，其中：
所述支架设于所述腔室主体之外，所述多个磁性件活动地设于所述支架上，所述多个磁性件环绕所述腔室主体设置，每个所述磁性件均可在第一位置与第二位置之间切换；
所述支架用于在所述磁性件处于所述第一位置的情况下，使所述磁性件形成的磁场位于所述腔室主体之外；在所述磁性件处于所述第二位置的情况下，使所述磁性件形成的磁场至少部分位于所述腔室主体之内。
第二方面，本申请提出了一种半导体设备，包括上述的半导体腔室。
与相关技术相比，本申请的有益效果如下：
本申请实施例公开的半导体腔室通过对相关技术进行改进，使得环绕腔室主体的多个磁性件活动地设置于支架上，进而使得每个磁性件能够相对于支架在第一位置与第二位置之间切换，上述支架用于在磁性件处于第一位置的情况下，使磁性件形成的磁场位于腔室主体之外；在磁性件处于第二位置的情况下，使磁性件形成的磁场至少部分位于腔室主体之内，从而能够通过调整磁性件的位置来灵活地调整整个磁场调节机构施加于腔室主体上的磁场。相比于相关技术中通过拆卸或增加磁性件以改变磁性件的数量来调整磁场而言，本申请实施例公开的半导体腔室无疑能够使得对施加于腔室主体上的磁场进行调节操作变得较为简单、方便。
此处所说明的附图用来提供对本申请的进一步理解，构成本申请的一部分，本申请的示意性实施例及其说明用于解释本申请，并不构成对本申请的不当限定。在附图中：
图1和图2分别是本申请的一个实施例的半导体腔室在磁性件处于不同位置时的结构示意图；
图3和图4分别是本申请的另一个实施例的半导体腔室在磁性件处于不 同位置时的结构示意图；
图5和图6分别是本申请的再一个实施例的半导体腔室在磁性件处于不同位置时的结构示意图；
图7为本申请实施例公开的一种具体的磁场调节机构的结构示意图；
图8为图7的A-A向剖视图；
图9为第一导磁环的俯视图；
图10为图9的B-B向剖视图；
图11为隔磁环的俯视图；
图12为图11的C-C向剖视图；
图13为第二导磁环的俯视图；
图14为图13的D-D向剖视图；
图15为磁性件在第二位置时产生的磁场示意图；
图16为磁性件在第一位置时产生的磁场示意图；
图17为本申请的又一个实施例的半导体腔室的结构示意图。
附图标记说明：
100-腔室主体，
200-磁场调节机构，
210-支架，211-第一导磁件，211′-第一导磁件、211a-第一凹槽、211b-第一气孔、212-隔磁件，212′-隔磁件，212a-通孔、213-第二导磁件，213′-第二导磁件，213a-第二凹槽、213b-第二气孔、210′-支架、201-支架、201′-支架、201〞-支架、
220-磁性件，220′-磁性件、202-磁性件、202′-磁性件、202〞-磁性件、
230-第一密封圈，
240-第二密封圈，
250-第三密封圈，
300-磁控管组件、400-靶材组件、500-承载基座、600-直流电源、700-偏压电源。
为使本申请的目的、技术方案和优点更加清楚，下面将结合本申请具体实施例及相应的附图对本申请技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
如图1至图17所示，本申请公开一种半导体腔室，本申请公开的半导体腔室可以应用于半导体设备。
请再次参考图1和图2，本申请公开的半导体腔室包括腔室主体100和磁场调节机构200。
腔室主体100是半导体腔室的主体构件，腔室主体100可以容纳待加工件，并对待加工件进行半导体工艺。待加工件可以为晶片或晶圆(wafer)，本申请不限制待加工件的具体种类。
与此同时，腔室主体100可以为半导体腔室的其他至少部分组件提供安装基础。磁场调节机构200安装于腔室主体100上。在本申请实施例中，磁场调节机构200可用于调节施加于半导体腔室的磁场，进而改变磁场分布情况，使得半导体腔室内的磁场分布能够配合针对待加工件所进行的工艺条件。
磁场调节机构200包括支架210和多个磁性件220，支架210设置于腔室主体100之外。具体的，支架210可以与腔室主体100固定连接，支架210也可以与腔室主体100活动连接，对此，本申请不作限制。
每个磁性件220可产生磁场。具体的，磁性件220可以为永磁体。支架210为磁性件220提供安装基础，多个磁性件220活动地设于支架210上，并且每个磁性件220均可在第一位置和第二位置之间切换。在本申请实施例 中，多个磁性件220环绕腔室主体100设置。
如图1所示，支架210用于在磁性件220处于第一位置的情况下，使磁性件220形成的磁场处于腔室主体100之外。此时，位于第一位置的磁性件220形成的磁场不会对腔室主体100内的工艺气体产生影响，位于第一位置的磁性件220处于非工作状态。
如图2所示，支架210还用于在磁性件220处于第二位置的情况下，使处于第二位置的磁性件220形成的磁场的至少部分处于腔室主体100之内。此时，处于第二位置的磁性件220形成的磁场可作用于腔室主体100内的工艺气体，位于第二位置的磁性件220处于工作状态。
如上文所述，本申请实施例公开的半导体腔室包括多个磁性件220，每个磁性件220能够在第一位置与第二位置之间切换。通过调整至少部分磁性件220的位置，从而能够使得多个磁性件220形成更多样的磁场，进而能够较为灵活地配合半导体腔室相应的工艺条件。
本申请实施例公开的半导体腔室中，腔室主体100可用于容纳待加工件，磁场调节机构200中的磁性件220在第一位置和第二位置切换时，能够使得磁性件220产生的磁场作用于腔室主体100内或腔室主体100外。当施加于腔室主体100内的待加工件以一种工艺条件时，通过将相应数量的磁性件220设置于第二位置(如图2所示)，能够使磁性件220产生的磁场的至少部分作用于腔室主体100内，从而达到调节工艺气体分布的目的。当施加于腔室主体100内的待加工件以另一种工艺条件时，通过将相应数量的磁性件220切换至第一位置(如图1所示)，能够使磁性件220产生的磁场不再作用于腔室主体100内。本申请所涉及的图1以及图2所示磁性件220所处第一位置和第二位置仅为示意性说明，并非以此为限，只要通过改变磁性件220的位置，实现磁性件220处于一位置时，所产生的磁场不会对腔室主体100内的工艺气体产生影响，即为第一位置，此时处于第一位置的磁性件220处于非工作 状态；通过改变磁性件220的位置，实现磁性件220处于另一位置，所形成的磁场的至少部分处于腔室主体100内，即为第二位置，此时处于第二位置的磁性件220处于工作状态。
通过上述工作过程可知，本申请实施例公开的半导体腔室通过对相关技术进行改进，使得环绕腔室主体100的多个磁性件220活动地设置于支架210上，进而使得每个磁性件220在第一位置与第二位置之间切换，上述支架210用于在磁性件220处于第一位置的情况下，使磁性件220形成的磁场位于腔室主体100之外；在磁性件220处于第二位置的情况下，使磁性件220形成的磁场至少部分位于腔室主体100之内，从而能够通过调整磁性件220的位置来灵活地调整整个磁场调节机构200施加于腔室主体100上的磁场。相比于相关技术中通过拆卸或增加来磁性件的数量来调整磁场而言，本申请实施例公开的半导体腔室无疑能够使得对施加于腔室主体100上的磁场进行调节操作变得较为简单、方便。
请再次参考图1，本申请实施例公开的半导体腔室还包括磁控管组件300、靶材组件400、承载基座500、激励电源600和偏压电源700。在具体的工作过程中，激励电源600与靶材组件400相连，承载基座500设置在腔室主体100中，承载基座500用于承载待加工件，偏压电源700与承载基座500连接。在具体的溅射过程中，磁控管组件300将腔室主体100内的工艺气体电离形成带电粒子，在激励电源600产生的电场力作用下，带电粒子会轰击靶材组件400，并形成靶材粒子。靶材粒子在偏压电源700的电场力作用下会向靠近承载基座500的方向移动，并最终沉积在承载基座500上的待加工件上，最终形成沉积层(即薄膜)，达到工艺要求。激励电源600例如为直流电源。
在具体的实施过程中，半导体腔室还可以包括驱动机构，驱动机构能够驱动磁性件220运动，进而使得磁性件220在第一位置与第二位置之间切换。 本申请实施例公开的半导体腔室还可以包括控制器，控制器能够根据半导体腔室的功率来适应性地调整多个磁性件220的位置。具体的，控制器可以通过控制驱动机构，进而由驱动机构来调整磁性件220的位置，最终达到根据半导体腔室的功率来适应性调整整个磁场调节机构200施加于腔室主体100磁场。此处控制为公知技术，详细过程不再赘述。
如上文所述，磁性件220能够在支架210上移动，进而在第一位置与第二位置之间切换，最终实现磁场的调节。
在具体的实施过程中，达到上述目的的方式有多种，请参考图3和图4，一种可选的方案中，本申请实施例公开的半导体腔室包括驱动机构，驱动机构可以设置于支架210′上，驱动机构与磁性件220′相连，驱动机构驱动磁性件220′移动。具体的，驱动机构驱动磁性件220′移动，进而使得磁性件220′处于第一位置的情况下，磁性件220′产生的磁场能够由于磁性件220′远离腔室主体100，而位于腔室主体100之外，如图3所示。同理，在驱动机构驱动磁性件220′移动至第二位置的情况下，磁性件220′产生的磁场能够由于磁性件220′靠近腔室主体100，而至少部分位于腔室主体100之内，如图4所示。由此可见，通过驱动机构驱动磁性件220′在大范围内的移动，进而来改变磁性件220′产生的磁场远离腔室主体100而位于腔室主体100之外或靠近腔室主体100而位于腔室主体100之内。
驱动机构可以为液压伸缩件、气压伸缩件、直线电机等，当然，驱动机构还可以为其他结构，本申请实施例不限制驱动机构的具体种类。
请再次参考图5和图6，在另一种具体的实施方式中，支架201可以包括依次对接的第一导磁件211、隔磁件212和第二导磁件213，具体地，第一导磁件211、隔磁件212和第二导磁件213均设于腔室主体100上。由于第一导磁件211和第二导磁件213均能够导磁，隔磁件212设于第一导磁件211和第二导磁件213之间，进而将第一导磁件211和第二导磁件213隔离，最 终避免第一导磁件211和第二导磁件213之间产生磁通。
请再次参考图6，在磁性件202处于第二位置的情况下，第一导磁件211、隔磁件212和第二导磁件213均与磁性件202接触。在此种情况下，磁性件202的两个磁极分别与第一导磁件211和第二导磁件213接触，最终相当于使得磁性件202、第一导磁件211和第二导磁件213形成一个更大体积的磁性结构，更大体积的磁性结构能够在更大的空间范围内形成磁场，进而能够使得磁场的至少部分位于腔室主体100内。
请再次参考图5，在磁性件202处于第一位置的情况下，可以与隔磁件212与磁性件202接触，且同时第一导磁件211与第二导磁件213中的一者与磁性件202接触；或者，磁性件202仅与第一导磁件211与第二导磁件213中的一者接触。在此种情况下，磁性件202相当于与第一导磁件211或第二导磁件213形成一个体积较小的磁性结构。磁性件202仅与第一导磁件211接触的情形，该情形下，较小体积的磁性结构能够在较小的空间范围内形成磁场，进而能够使得磁场位于腔室主体100之外。
但本发明并非以此为限，可通过改变磁性件202、第一导磁件211、隔磁件212以及第二导磁件213在第一方向的尺寸大小，实现灵活调整四者之间的接触关系，实现磁性件202在第一位置以及第二位置的调控。
通过第一导磁件211和第二导磁件213的导磁配合，从而能够调整磁性件202产生的磁场的位置，能够使得对磁场的调节更加方便，无需使得磁性件202移动较大的距离，不但能够降低驱动机构的能耗，而且还有利于支架201的小型化，使得整个磁场调节机构200的体积较小，减小其占用空间，方便其在腔室主体100上的布置。
在本申请实施例中，支架的结构可以有多种。一种可选的方案中，支架201′可以为环状结构，如图7至图16所示，环状结构环绕腔室主体100设置。此种环状结构更有利于作为磁性件202′的安装基础，最终实现多个磁 性件202′环绕腔室主体100设置这一目的。
在进一步的技术方案中，在支架201′为环状结构的情况下，第一导磁件211′为第一导磁环，隔磁件212′为隔磁环，第二导磁件213′为第二导磁环，如图7至图16所示。第一导磁环、隔磁环和第二导磁环可以同轴，且环绕腔室主体100设置，多个磁性件202′可以沿第一导磁环的圆周方向布置，且与第一导磁环、隔磁环和第二导磁环活动连接。此种结构，通过调整隔磁件212′、第一导磁件211′和第二导磁件213′的形状，从而使其能够形成有利于多个磁性件202′安装的环状结构，同时不影响第一导磁件211′、隔磁件212′和第二导磁件213′与磁性件202′的配合。
实现多个磁性件220围绕腔室主体100设置的方式有多种。请参考图17，一种可选的方案中，支架201〞可以为多个，多个支架201〞围绕腔室主体100间隔设置，每个磁性件202〞一一对应地设于支架201〞上。也就是说，支架201〞的数量与磁性件202〞的数量相同，且一一对应地设置，每个支架201〞均是独立的，用于单独调整对应的磁性件202〞的位置。此种通过减小由多个支架201〞构成分体式结构的整体体积，并通过调整多个支架201〞的布局也能够实现多个磁性件202〞围绕腔室主体100设置，此种结构有利于安装的灵活化，也方便对单个损坏的支架201〞或磁性件202〞进行更换或维修。
在进一步的技术方案中，第一导磁件211′、隔磁件212′和第二导磁件213′沿第一方向依次叠置，第一导磁件211′(例如，其与隔磁件212′相对的表面)开设有第一凹槽211a，如图10所示，隔磁件212′开设有通孔212a，该通孔212a例如沿上述第一方向贯通，如图12所示，第二导磁件213′(例如，其与隔磁件212′相对的表面)开设有第二凹槽213a，如图14所示，第一凹槽211a、通孔212a和第二凹槽213a对应设置。形成内腔，如图8、图15和图16所示，磁性件202′可沿上述第一方向滑动地设于内腔内， 上述第一方向为多个磁性件202′环绕所形成的圆周的轴线方向。此种情况下，磁性件202′设置于内腔中，能够得到支架201′的防护，同时也能够较好地避免外部环境对磁性件202′移动地干扰。当然，支架201′可以直接开设有内腔，不局限于内腔必须由第一导磁件211′、第二导磁件213′和隔磁件212′形成。
如上文所述，磁性件202′在驱动机构的驱动下实现在第一位置与第二位置之间的切换。驱动机构有多种。一种可选的方案中，在支架201′形成内腔的情况下，支架201′的第一端面开设有第一气孔211b，如图10所示，支架201′的第二端面开设有第二气孔213b，如图14所示，第一气孔211b和第二气孔213b均与内腔连通。具体的，支架201′的第一端面可以是第一导磁件211′背向第二导磁件213′的表面，支架201′的第二端面可以是第二导磁件213′背向第一导磁件211′的表面，如图8所示。
在第一气孔211b向内腔内充气，且第二气孔213b泄气的情况下，磁性件202′可自第一位置移动至第二位置；在第二气孔213b向内腔内充气，且第一气孔211b泄气的情况下，磁性件202′可自第二位置移动至第一位置。
在具体的工作过程中，可以将第一气孔211b与气源连通，气源的气体可以通过第一气孔211b进入到内腔中，并作用于磁性件202′的第一侧上，最终磁性件202′在气体的推动下能够移动至第二位置，此过程中，磁性件202′的移动会推动内腔中位于磁性件202′的第二侧的气体从第二气孔213b中排出。
同理，可以将第二气孔213b与气源连通，气源的气体可以通过第二气孔213b进入到内腔中，并作用于磁性件202′的第二侧上，最终磁性件202′在气体的推动下能够移动至第一位置，此过程中，磁性件202′的移动能够推动内腔中位于磁性件202′的第一侧的气体从第一气孔211b中排出。
进一步来说，磁性件202′将上述内腔沿上述第一方向隔离形成第一子 内腔和第二子内腔，第一导磁件211′背向第二导磁件213′的表面上开设有与第一子内腔连通的第一气孔211b，如图10所示，第二导磁件213′背向第一导磁件211′的表面上开设有与第二子内腔连通的第二气孔213b。在第一气孔211b向第一子内腔内充气，且第二气孔213b泄气的情况下，磁性件202′可自第一位置移动至第二位置；在第二气孔213b向第二子内腔内充气，且第一气孔211b泄气的情况下，磁性件202′可自第二位置移动至第一位置。在具体的工作过程中，可以将第一气孔211b与气源连通，气源的气体可以通过第一气孔211b进入到第一子内腔中，并作用于磁性件202′的第一侧上，最终磁性件202′在气体的推动下能够移动至第二位置，此过程中，磁性件202′的移动会推动第二子内腔中位于磁性件202′的第二侧的气体从第二气孔213b中排出。同理，可以将第二气孔213b与气源连通，气源的气体可以通过第二气孔213b进入到第二子内腔中，并作用于磁性件202′的第二侧上，最终磁性件202′在气体的推动下能够移动至第一位置，此过程中，磁性件202′的移动能够推动第一子内腔中位于磁性件202′的第一侧的气体从第一气孔211b中排出。
上述方案通过改变支架201′的结构，通过气体驱动磁性件202′在第一位置与第二位置之间切换。由于半导体腔室配置有较多的气源，因此上述驱动结构更容易充分利用半导体腔室已有的气源结构进行驱动，有利于提高半导体腔室已有构件的利用率，同时对半导体腔室的结构改进较小，具有较强的实用性。
为了方便单独控制，同时实现更为精细化的磁场控制，一种可选的方案中，内腔可以为多个，多个磁性件202′可以一一对应地设于多个内腔中。也就是说，内腔的数量可以与磁性件202′的数量相同，且各个磁性件202′可以一一对应地设于各个内腔中。
在气体驱动磁性件202′移动的情况下，内腔的密封性越好越有利于气 体进行高效地驱动，基于此，一种可选的方案中，磁场调节机构200还可以包括第一密封圈230，如图8所示，第一密封圈230套设在磁性件202′上，且第一密封圈230密封设置在磁性件202′与内腔的内壁之间。具体来说，第一密封圈230的数量与磁性件202′的数量相同，且各个第一密封圈230一一对应地套设在各个磁性件202′上，且第一密封圈230用于将磁性件202′与内腔的内壁之间的间隙进行密封。此种结构有利于磁性件202′相背的两侧空间的隔离，从而避免相互之间窜气而影响对磁性件202′的驱动。
在另一种可选的方案中，隔磁件212′与第一导磁件211′彼此相对的两个表面之间，且分别位于212a分别靠近隔磁件212′的内周缘和外周缘的两侧设置有两个第二密封圈240，如图8所示，和/或，隔磁件212′与第二导磁件213′彼此相对的两个表面之间，且分别位于212a分别靠近隔磁件212′的内周缘和外周缘的两侧设置有两个第三密封圈250，如图8所示。第二密封圈240和第三密封圈250都能提高对接面之间的密封性，进而有利于提高内腔与外部环境之间的隔离效果，避免在气体驱动的过程中通过对接面之间的装配缝隙窜出，这同样有利于提高对磁性件202′的驱动效果。
在进一步的技术方案中，在磁性件202′处于第一位置的情况下，磁性件202′与第一凹槽211a的底壁限位接触。此种结构能够使得在对磁性件202′驱动的过程中，第一凹槽211a的底壁能够对磁性件202′发挥限位作用，避免磁性件202′过度移动。也就是说，在此种情况下，第一凹槽211a不但能发挥限位作用，而且还能够起到围成内腔的部分结构的作用。
同理，在磁性件202′处于第二位置的情况下，磁性件202′与第二凹槽213a的底壁限位接触。此种结构能够使得在对磁性件202′驱动的过程中，第二凹槽213a的底壁能够对磁性件202′发挥限位作用，避免磁性件202′过度移动。也就是说，在此种情况下，第二凹槽213a不但能发挥限位作用，而且还能够起到围成内腔的部分结构的作用。
当然，在本申请实施例中，支架也不是必须设有内腔，请再次参考图5所示，图5示意的半导体腔室中，磁性件202与支架201可移动配合，磁性件202的至少部分设于支架201之外。
基于上述的半导体腔室，本申请还提出了一种半导体设备，包括上述的半导体腔室。
以上所述仅为本申请的实施例而已，并不用于限制本申请。对于本领域技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原理之内所作的任何修改、等同替换、改进等，均应包含在本申请的权利要求范围之内。
Claims (12)
- 一种半导体腔室，其特征在于，包括腔室主体和磁场调节机构，所述磁场调节机构包括支架和多个磁性件，其中：所述支架设于所述腔室主体之外，所述多个磁性件活动地设于所述支架上，所述多个磁性件环绕所述腔室主体设置，每个所述磁性件均可在第一位置与第二位置之间切换；所述支架用于在所述磁性件处于所述第一位置的情况下，使所述磁性件形成的磁场位于所述腔室主体之外；在所述磁性件处于所述第二位置的情况下，使所述磁性件形成的磁场至少部分位于所述腔室主体之内。
- 根据权利要求1所述的半导体腔室，其特征在于，所述支架包括依次对接的第一导磁件、隔磁件和第二导磁件，其中：在所述磁性件处于所述第二位置的情况下，所述第一导磁件、所述隔磁件和所述第二导磁件均与所述磁性件接触；在所述磁性件处于所述第一位置的情况下，所述隔磁件与所述磁性件接触，且所述第一导磁件与所述第二导磁件中的一者与所述磁性件触。
- 根据权利要求2所述的半导体腔室，其特征在于，所述第一导磁件为第一导磁环，所述隔磁件为隔磁环，所述第二导磁件为第二导磁环，所述第一导磁环、所述隔磁环和所述第二导磁环同轴，且环绕所述腔室主体设置，所述多个磁性件沿所述第一导磁环的圆周方向布置，且与所述第一导磁环、所述隔磁环和所述第二导磁环活动连接。
- 根据权利要求2所述的半导体腔室，其特征在于，所述支架为多个，多个所述支架围绕所述腔室主体间隔设置，每个所述磁性件一一对应地设于所述支架上。
- 根据权利要求2至4中任一项所述的半导体腔室，其特征在于，所述第一导磁件、所述隔磁件和所述第二导磁件沿第一方向依次叠置，所述第一导磁件开设有第一凹槽，所述隔磁件开设有通孔，所述第二导磁件开设有第二凹槽，所述第一凹槽、所述通孔和所述第二凹槽对应设置，形成内腔，所述磁性件可沿所述第一方向滑动地设于所述内腔内，所述第一方向为所述多个磁性件环绕所形成的圆周的轴线方向。
- 根据权利要求5所述的半导体腔室，其特征在于，所述支架的第一端面开设有第一气孔，所述支架的第二端面开设有第二气孔，所述第一气孔和所述第二气孔均与所述内腔连通；在所述第一气孔向所述内腔内充气，且所述第二气孔泄气的情况下，所述磁性件可自所述第一位置移动至所述第二位置；在所述第二气孔向所述内腔内充气，且所述第一气孔泄气的情况下，所述磁性件可自所述第二位置移动至所述第一位置。
- 根据权利要求5所述的半导体腔室，其特征在于，所述内腔为多个，多个所述磁性件一一对应地设于多个所述内腔中。
- 根据权利要求5所述的半导体腔室，其特征在于，所述磁场调节机构还包括第一密封圈，所述第一密封圈套设在所述磁性件上，且所述第一密封圈密封设置在所述磁性件与所述内腔的内壁之间。
- 根据权利要求5所述的半导体腔室，其特征在于，所述隔磁件的第一端面与所述第一凹槽的槽口所在的表面之间设有第二密封圈，和/或，所述隔磁件的第二端面与所述第二凹槽的槽口所在的表面之间设有第三密封圈。
- 根据权利要求5所述的半导体腔室，其特征在于，在所述第一位置 的情况下，所述磁性件与所述第一凹槽的底壁限位接触；和/或，在所述第二位置的情况下，所述磁性件与所述第二凹槽的底壁限位接触。
- 根据权利要求1所述的半导体腔室，其特征在于，所述腔室主体的顶部设置有磁控管组件和靶材组件，所述腔室主体中设置有承载基座，所述靶材组件与激励电源连接，所述承载基座与偏压电源连接。
- 一种半导体设备，其特征在于，包括权利要求1至11中任一项所述的半导体腔室。
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| CN104928635A (zh) * | 2014-03-21 | 2015-09-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 磁控溅射腔室及磁控溅射设备 |
| CN109423616A (zh) * | 2017-08-31 | 2019-03-05 | 台湾积体电路制造股份有限公司 | 可调磁体、沉积腔室及用于改变沉积腔室中磁场分布的方法 |
| US20210050195A1 (en) * | 2019-08-16 | 2021-02-18 | Applied Materials, Inc. | Methods and apparatus for physical vapor deposition (pvd) dielectric deposition |
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| CN104928635A (zh) * | 2014-03-21 | 2015-09-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 磁控溅射腔室及磁控溅射设备 |
| CN109423616A (zh) * | 2017-08-31 | 2019-03-05 | 台湾积体电路制造股份有限公司 | 可调磁体、沉积腔室及用于改变沉积腔室中磁场分布的方法 |
| US20210050195A1 (en) * | 2019-08-16 | 2021-02-18 | Applied Materials, Inc. | Methods and apparatus for physical vapor deposition (pvd) dielectric deposition |
| CN113241313A (zh) * | 2021-05-08 | 2021-08-10 | 北京北方华创微电子装备有限公司 | 半导体腔室及半导体设备 |
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