WO2022209469A1 - シンチレータ構造体 - Google Patents
シンチレータ構造体 Download PDFInfo
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- WO2022209469A1 WO2022209469A1 PCT/JP2022/007652 JP2022007652W WO2022209469A1 WO 2022209469 A1 WO2022209469 A1 WO 2022209469A1 JP 2022007652 W JP2022007652 W JP 2022007652W WO 2022209469 A1 WO2022209469 A1 WO 2022209469A1
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- resin
- scintillator
- gos
- scintillator structure
- epoxy resin
- Prior art date
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- 229920005989 resin Polymers 0.000 claims abstract description 86
- 239000011347 resin Substances 0.000 claims abstract description 86
- 238000002834 transmittance Methods 0.000 claims abstract description 36
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 15
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- 239000003822 epoxy resin Substances 0.000 claims description 44
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- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical group OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 claims description 12
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- 229910052777 Praseodymium Inorganic materials 0.000 description 8
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- 230000009467 reduction Effects 0.000 description 7
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- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 4
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- WGNACFDZJVIUCM-UHFFFAOYSA-N 1,3,5-tris[2-(oxiran-2-yl)ethyl]-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CCC2OC2)C(=O)N(CCC2OC2)C(=O)N1CCC1CO1 WGNACFDZJVIUCM-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
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- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical class C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 1
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- LSDYBCGXPCFFNM-UHFFFAOYSA-M dimethyl phosphate;tributyl(methyl)phosphanium Chemical compound COP([O-])(=O)OC.CCCC[P+](C)(CCCC)CCCC LSDYBCGXPCFFNM-UHFFFAOYSA-M 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- BJQWBACJIAKDTJ-UHFFFAOYSA-N tetrabutylphosphanium Chemical compound CCCC[P+](CCCC)(CCCC)CCCC BJQWBACJIAKDTJ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2002—Optical details, e.g. reflecting or diffusing layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
- G21K2004/08—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens with a binder in the phosphor layer
Definitions
- the present invention relates to a scintillator structure, and for example, to a technique effectively applied to a scintillator structure having a plurality of cells each containing a resin and a phosphor.
- Patent Document 1 describes a technique related to a phosphor molding containing a bisphenol A type epoxy resin.
- a scintillator is a substance that absorbs the energy of radiation and emits visible light when exposed to radiation such as X-rays and gamma rays.
- This scintillator is commercialized as a scintillator structure containing a scintillator and a reflective layer, and an X-ray detector that combines the scintillator structure and a photoelectric conversion element such as a photodiode is used in medical equipment such as X-ray CT, It is used in analysis equipment, non-destructive inspection equipment using radiation, radiation leakage inspection equipment, etc.
- gadolinium oxysulfide Gadolinium oxysulfide
- gadolinium oxysulfide will be referred to as "GOS”.
- gadolinium oxysulfide itself hardly emits light, and gadolinium oxysulfide contains praseodymium, terbium, or the like to emit light.
- the term "GOS” is used in this specification to imply a substance (phosphor) that emits light by containing praseodymium, terbium, or the like in gadolinium oxysulfide itself.
- gadolinium oxysulfide itself contains praseodymium, terbium, etc., it may be expressed as "GOS" containing praseodymium or "GOS” containing terbium.
- This “GOS” has the advantage of having a higher visible light emission output than cadmium tungstate (CdWO 4 ), but the manufacturing cost is high.
- improving reliability is a high-priority item required of the scintillator structure. This is because if the reliability of the scintillator structure can be improved, the life of the radiation detector can be lengthened. Therefore, scintillators are required to have high radiation resistance in order to improve reliability.
- the scintillator is composed of a mixture of "GOS" powder and resin, it is desired that the resin is less susceptible to alteration and deterioration when exposed to radiation.
- An object of the present invention is to improve the reliability of scintillator structures.
- a scintillator structure in one embodiment includes a plurality of cells and a reflective layer covering the plurality of cells.
- each of the plurality of cells contains a resin and a phosphor, and the resin has a total light transmittance reduction rate of 8% for light having a wavelength of 542 nm after being irradiated with X-rays at a dose of 100 kGy. is less than
- the reliability of the scintillator structure can be improved.
- FIG. 1 is a diagram schematically showing an X-ray detector.
- the X-ray detector 100 has a scintillator structure 10 and a light receiving element 20.
- the scintillator structure 10 is composed of a plurality of scintillators 11 that generate visible light from X-rays incident on the X-ray detector 100 and a reflective layer 12 covering each of the plurality of scintillators 11 .
- the light receiving element 20 has a function of generating current from visible light generated by the scintillator 11, and is composed of a photoelectric conversion element represented by a photodiode, for example.
- the light receiving element 20 is provided, for example, on the support 30 and is provided corresponding to each of the scintillators 11 .
- the scintillator 11 has the function of absorbing X-rays and generating visible light, and is composed of phosphor 11a and resin 11b.
- the material obtained by mixing the "GOS" powder constituting the phosphor 11a and the resin 11b is sometimes called "resin GOS". That is, the scintillator 11 in this embodiment is made of "resin GOS".
- the phosphor 11a is gadolinium oxysulfide containing praseodymium, terbium, or the like, and the resin 11b is, for example, an epoxy resin.
- the reflective layer 12 is composed of a resin 12b containing reflective particles 12a made of titanium oxide.
- the scintillator 11 is divided into a plurality of cells (CL). That is, from the viewpoint of improving the resolution of an X-ray image, the scintillator 11 is divided into a plurality of cells CL corresponding to each of the plurality of light receiving elements 20 (arraying of the scintillator 11).
- the scintillator structure 10 includes multiple cells CL and the reflective layer 12 covering the multiple cells CL. Specifically, the top surface and four side surfaces of the cell CL are covered with a reflective layer 12 . On the other hand, the bottom surface of the cell CL is not covered with the reflective layer 12 because it needs to be in contact with the light receiving element 20 .
- the X-ray detector configured in this way operates as follows.
- a part of the visible light emitted from the scintillator 11 is directly incident on the light receiving element 20, and the other part of the visible light emitted by the scintillator 11 is emitted from the scintillator.
- the light is condensed on the light receiving element 20 while being repeatedly reflected by the reflective layer 12 covering the light receiving element 11 .
- the light receiving element 20 composed of, for example, a photodiode
- electrons of the semiconductor material constituting the photodiode are excited from the valence band to the conduction band by the energy of the visible light.
- a current due to electrons excited in the conduction band flows through the photodiode.
- An X-ray image is acquired based on the current output from the photodiode.
- the X-ray detector 100 can acquire an X-ray image.
- the scintillator structure 10 is composed of a rectangular parallelepiped scintillator 11 and a reflective layer 12 covering the scintillator 11 .
- the rectangular parallelepiped scintillator 11 is formed through processing steps such as a dicing step and a grinding step, a processed surface is formed on the surface of the rectangular parallelepiped shape. That is, the term “processed surface” refers to a surface that has been mechanically processed.
- the "machined surface” includes a surface ground with a grinding wheel to increase the thickness of the workpiece, or a surface obtained by cutting the workpiece with a slicing blade for dicing.
- the "processed surface” is defined as a surface where the resin is exposed and the surface where the "GOS" powder is fractured.
- FIG. 1 schematically shows a scintillator 11 using "resin GOS” in which the interface between the scintillator 11 and the reflective layer 12 is a "processed surface".
- the "processed surface” includes a region where the resin 11b is cut and a region where the phosphor 11a ("GOS" powder) is broken.
- the X-ray detector 100 is configured in this manner.
- CWO cadmium tungstate
- this “CWO” contains cadmium, which is a substance subject to the RoHS Directive/REACH Regulation.
- "GOS” ceramic has been used as the scintillator 11 instead of “CWO” containing cadmium.
- This "GOS” ceramic has an advantage over “CWO” in that it has a higher emission output of visible light, but has a disadvantage in that the manufacturing cost is higher.
- the "resin GOS” includes a “first resin GOS” obtained by mixing "GOS” powder obtained by adding praseodymium (Pr) and cerium (Ce) to gadolinium oxysulfide and an epoxy resin, and terbium (Tb ) and cerium (Ce) added to gadolinium oxysulfide, and “second resin GOS” obtained by mixing powder and epoxy resin.
- first resin GOS obtained by mixing "GOS” powder obtained by adding praseodymium (Pr) and cerium (Ce) to gadolinium oxysulfide and an epoxy resin, and terbium (Tb ) and cerium (Ce) added to gadolinium oxysulfide
- second resin GOS obtained by mixing powder and epoxy resin.
- Both the "first resin GOS” and the “second resin GOS” have the advantage of higher light output than “CWO”. Furthermore, there is also the advantage that the afterglow characteristics of the "first resin GOS” are equivalent to those of the "CWO". In other words, the performance of the scintillator structure 10 is required not only to have a large emission output but also to have good afterglow characteristics.
- the scintillator 11 forming the scintillator structure 10 is a material that emits visible light when exposed to X-rays.
- the mechanism by which the scintillator 11 generates visible light when exposed to X-rays is as follows.
- the scintillator 11 when the scintillator 11 is irradiated with X-rays, electrons in the scintillator 11 receive energy from the X-rays and transition from a low-energy ground state to a high-energy excited state. Then, the electrons in the excited state transition to the ground state with low energy. At this time, most of the excited electrons immediately transition to the ground state. On the other hand, some of the excited electrons transition to the ground state after a certain amount of time has passed.
- afterglow is visible light that occurs when a certain amount of time elapses after the timing of the transition from the excited state to the ground state after the X-ray irradiation.
- a large afterglow means that the intensity of the visible light generated until a certain amount of time has passed after the irradiation of X-rays is high.
- the afterglow generated by the previous X-ray irradiation remains until the next X-ray irradiation, and the remaining afterglow becomes noise. For this reason, it is desirable that the afterglow is small.
- good afterglow characteristics mean that the afterglow is small.
- the afterglow characteristics of the "first resin GOS" are equivalent to those of "CWO".
- Resin GOS has the following advantages compared to “CWO”, and is excellent as a scintillator 11 capable of achieving both performance and manufacturing cost.
- “Resin GOS” has a higher luminous output than “CWO”.
- the afterglow characteristics of the "first resin GOS” are equivalent to those of “CWO”.
- “Resin GOS” does not use cadmium.
- "Resin GOS” has a lower manufacturing cost than "CWO”.
- Cesium iodide (CsI) is used as the scintillator 11, and the "resin GOS” has the following advantages over “CsI”.
- "Second resin GOS” has better X-ray stopping properties than “CsI”.
- the afterglow characteristic of the "second resin GOS” is about 1/70 of that of "CsI”.
- "Resin GOS” is a stable substance with no deliquescence.
- "resin GOS” has the following advantages compared to “GOS” ceramics. That is, “resin GOS” and “GOS” ceramics contain heavy metals such as “Gd”, “Ga” or “Bi". These heavy metals are relatively expensive, and there is concern about adverse effects on living bodies and the environment when they flow out. Therefore, it is desirable that the scintillator 11 contains as little heavy metal as possible.
- "resin GOS” which consists of a mixture of "GOS” powder and resin, uses less “GOS” than bulk "GOS” ceramic. This means that the "resin GOS” makes it possible to construct the scintillator 11 with less heavy metal content than the "GOS” ceramic. From this, it can be said that the "resin GOS” is superior to the "GOS” ceramic in that it can provide a scintillator 11 with a low heavy metal content.
- the "resin GOS” is considered promising as a scintillator 11 that can achieve both performance and manufacturing cost.
- the phosphor 11a used in this embodiment is composed of, for example, gadolinium oxysulfide or gadolinium-aluminum-gallium garnet (GGAG).
- gadolinium oxysulfide has a composition of "Gd 2 O 2 S” activated with at least one selected from, for example, praseodymium (Pr), cerium (Ce), and terbium (Tb).
- the phosphor 11a is not limited to a specific composition.
- the resin 11b and the resin 12b are made of a material that is resistant to alteration and deterioration when exposed to radiation.
- the materials of these resins 11b and 12b are characteristic points of this embodiment, and these characteristic points will be described later.
- the constituent material of the reflecting particles 12a include white particles such as “TiO 2 ” (titanium oxide), “Al 2 O 3 ” (aluminum oxide), and “ZrO 2 ” (zirconium oxide).
- white particles such as “TiO 2 ” (titanium oxide), “Al 2 O 3 ” (aluminum oxide), and “ZrO 2 ” (zirconium oxide).
- the reflecting particles 12a for example, bulk or a mixture of powder and resin can be used.
- the reflective particles 12a made of “rutile-type TiO 2 ” are desirable because they are excellent in light reflection efficiency. From the viewpoint of improving the light receiving efficiency of the light receiving element 20, the light reflectance of the reflective particles 12a is desirably 80% or more, and the light reflectance of the reflective particles 12a is desirably 90% or more. .
- the scintillator 11 and the reflective material forming the reflective layer 12 may contain other additives in addition to the components described above. For example, it is desirable to add a curing catalyst to shorten the curing time of the resin.
- an epoxy resin is used as the resin contained in the "resin GOS".
- This epoxy resin contains at least a main agent and a curing agent as constituent materials.
- a bisphenol A type epoxy resin is used as the main agent and an amine-based curing agent is used as the curing agent.
- a general epoxy resin that uses a bisphenol A type epoxy resin as a main ingredient and an amine-based curing agent as a curing agent as the resin that constitutes the "resin GOS” irradiation of radiation (X-rays)
- the present inventors have newly discovered that when is repeated over a long period of time, it deteriorates and discolors.
- discoloration of a translucent resin means that the absorption of light increases, which means that the transmittance of light decreases as a result. For this reason, the light generated from the scintillator made of "resin GOS" is less likely to reach the light-receiving element (photodiode), resulting in deterioration of the detection performance of the X-ray detector.
- a feature of this embodiment is that the following epoxy resins are used as resins contained in the "resin GOS" and resins contained in the reflector as epoxy resins containing at least a main agent and a curing agent. . Thereby, the reliability of the X-ray detector having the scintillator structure according to the present embodiment as a constituent element can be ensured for a long period of time.
- the main agent is a triazine derivative epoxy resin.
- triazine derivative epoxy resins include 1,3,5-triazine derivative epoxy resins.
- the 1,3,5-triazine derivative epoxy resin is preferably an epoxy resin having an "isocyanurate ring". This is because an epoxy resin having an "isocyanurate ring" in its skeleton has excellent stability against radiation and heat, and is resistant to discoloration.
- an epoxy resin having an "isocyanurate ring" in its skeleton preferably has a plurality of epoxy groups per isocyanurate ring from the viewpoint of suppressing discoloration. It is desirable to have 3 epoxy groups. This is because when a plurality of epoxy groups are bonded to the isocyanurate ring, the reactivity is high and the resin has strong stability, so that discoloration hardly occurs even when irradiated with X-rays.
- Epoxy resins having an "isocyanurate ring” include, for example, 1,3,5-triglycidyl isocyanurate, tris(2,3-epoxypropyl) isocyanurate, tris( ⁇ -methylglycidyl) isocyanurate, tris(1 -methyl-2,3-epoxypropyl)isocyanurate, 1,3,5-tris(2,3-epoxypropyl)-1,3,5-triazine-2,4,6(1H,3H,5H)- trione, 1,3,5-tris(3,4-epoxybutyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione, 1,3,5-tris(5 ,6-epoxybutyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione, tris ⁇ 2,2-bis[(oxiran-2-ylmethoxy)methyl]butyl
- triazine derivative epoxy resins examples include, for example, 1,3,5-tris(2,3-epoxypropyl)-1,3,5-triazine-2,4 ,6(1H,3H,5H)-trione commercially available products manufactured by Nissan Chemical Industries, Ltd.
- TEPIC-G a commercial product of 1,3,5-tris(3,4-epoxybutyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione
- TPIC-VL a commercial product of 1,3,5-tris(3,4-epoxybutyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione
- TPIC-VL manufactured by Nissan Chemical Industries, Ltd.
- TEPIC-FL manufactured by Nissan Chemical Industries, Ltd., which is a commercially available product, tris ⁇ 2,2-bis[(oxiran-2-ylmethoxy)methyl]butyl ⁇ -3,3',3''-[1,3,5 -triazine-2,4,6(1H,3H,5H)-tri
- a material that does not have a carbon double bond in order to suppress discoloration due to X-ray irradiation. This is because the carbon double bond is weaker than the carbon single bond, and the carbon double bond is easily broken by X-ray irradiation, resulting in discoloration of the material.
- an acid anhydride curing agent represented by a phthalic anhydride curing agent can be used as the curing agent.
- one kind of polybasic carboxylic acid anhydrides that are non-aromatic and do not chemically have a carbon double bond may be used, You may use two or more types together.
- curing agents include tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadic anhydride, and dodecenylsuccinic anhydride. be able to. In particular, it is desirable to use methylhexahydrophthalic anhydride.
- acid anhydride compounds include “Likacid TH”, “TH-1A”, “HH”, “MH”, “MH-700”, and “MH-700G” (all manufactured by Shin Nippon Rika Co., Ltd.). is mentioned.
- a curing catalyst is not an essential constituent material, but it is desirable to add it from the viewpoint of promoting the curing reaction of the main agent.
- the curing catalyst it is desirable to use an organophosphorus compound that is resistant to discoloration even when exposed to X-rays.
- the curing catalyst tetrabutylphosphonium 0,0-diethylphosphorodithioate (Hishiko-Rin PX-4ET manufactured by Nippon Kagaku Kogyo Co., Ltd.), methyltributylphosphonium dimethyl phosphate (Hishiko-Rin PX-4MP Nippon Kagaku Kogyo company) and the like.
- total light transmittance used in this specification is intended to include light that is transmitted in a direction deviated from the incident direction due to scattering inside the scintillator.
- the “total light transmittance” represents the transmittance when not only the transmitted light that passes straight from the incident direction but also the transmitted light that is scattered inside the scintillator and deviates from the straight traveling direction. ing.
- the purpose of using this "total light transmittance" is that, in the scintillator structure, as a result of the scintillator cells being covered with a reflective layer, the light scattered inside the cells is also repeatedly reflected and finally reaches the bottom surface of the cell.
- the light scattered inside the cell also contributes to the detection of radiation by the light receiving element because the light is incident on the light receiving element arranged in the cell.
- the total light transmittance is used in order to consider all the transmitted light that contributes to detection of radiation.
- total light transmittance in this specification means the total light transmittance measured using light having a wavelength of 542 nm for a sample with a thickness of 1.5 mm.
- total light transmittance when measuring the “total light transmittance”, after preparing a sample of 15 mm x 15 mm x 1.5 mm in length x width x thickness, the surface of the sample was mirror-finished, and the sample was We measure the “total light transmittance" for each.
- Table 1 is a table showing verification results for sample A and sample B.
- Sample A shows "Resin GOS” in the present embodiment, using a triazine derivative epoxy resin as a main agent and "Me-HHPA” (material name: methylhexahydroanhydride) as a curing agent.
- “Resin GOS” using phthalic acid product name: Shin Nippon Rika's "Likacid MH-T”).
- sample B represents a "resin GOS” in the related art, which uses a bisphenol A type epoxy resin as a main agent and an amine compound as a curing agent.
- sample B the initial “total light transmittance (0 kGy)" before X-ray irradiation is "90.902", while the “total light transmittance (0 kGy)" after X-ray irradiation with a dose of 100 kGy The rate (100 kGy)" is "78.361", and the “difference in total light transmittance” is "12.541".
- the "total light transmittance decrease rate" of sample A is “4.5%", while the “total light transmittance decrease rate” of sample B is “16%”. Therefore, it can be seen from the results in Table 1 that the "resin GOS” in the present embodiment can suppress the decrease in "total light transmittance” even after X-ray irradiation.
- the results of the verification in this embodiment confirm that even after irradiation with a high dose of X-rays of 100 kGy, the reduction in the total light transmittance of the "resin GOS" containing the triazine derivative epoxy resin is suppressed. has great technical significance.
- the present embodiment shows the results of verification after irradiation with a high dose of X-rays of 100 kGy. It is said to be highly tolerant.
- FIG. 2 is a flow chart explaining the flow of the manufacturing process of the scintillator structure.
- the substrate on which the scintillator is formed is diced to separate the substrate into a plurality of cells (S107).
- a plurality of singulated cells are rearranged (S108), and then coated with a reflective material so as to cover the plurality of cells (S109).
- the scintillator structure that has passed the inspection is shipped (S111).
- FIG. 3 is a diagram schematically showing the steps from the dicing step to the reflector coating step.
- the substrate WF on which scintillators made of "resin GOS" are formed by dicing the substrate WF on which scintillators made of "resin GOS" are formed, the substrate WF is singulated into a plurality of cells CL. Then, the plurality of singulated cells CL are rearranged in a line, for example. After that, an outer frame FR is arranged so as to enclose a plurality of cells CL rearranged in a line. Next, a reflector made of, for example, an epoxy resin containing titanium oxide is applied so as to cover the plurality of cells CL arranged in the outer frame FR. After that, the outer frame FR is removed. Thus, the scintillator structure 10A is manufactured.
- the line-shaped scintillator structure 10A using 1 ⁇ n cells is described as an example, but the technical concept of the present embodiment is not limited to this. It can also be applied to an array-like (matrix-like) scintillator structure using n ⁇ n cells.
- Table 2 is a table showing evaluation results based on samples.
- the shape of this sample is 15 mm x 15 mm x 1.5 mm (length x width x thickness), and the surface of the sample is mirror-finished.
- the diffuse transmitted light and straight transmitted light were collected on the detector and the total light transmittance was measured.
- the initial total light transmittance for light having a wavelength of 542 nm was 90% or more before X-ray irradiation. It can be seen that the excellent performance of less than 5% reduction in total light transmittance for light having a wavelength of 542 nm after irradiation with X-rays at a dose of 100 kGy can be achieved while ensuring the above. Therefore, by using the "resin GOS" in Examples 1 to 3, it is possible to provide a scintillator structure with high light output and excellent radiation resistance. By using this scintillator structure, it is possible to provide a highly reliable X-ray detector capable of maintaining stable detection performance over a long period of time.
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Abstract
Description
図1は、X線検出器を模式的に示す図である。
上述したように、本実施の形態では、シンチレータ11として「樹脂GOS」が採用されている。以下では、この理由について説明する。
(1)「樹脂GOS」は、「CWO」に比べて発光出力が高い。
(2)「第1樹脂GOS」の残光特性は、「CWO」の残光特性と同等である。
(3)「樹脂GOS」では、カドミウムを使用しない。
(4)「樹脂GOS」は、「CWO」に比べて製造コストが低い。
(1)「第2樹脂GOS」は、「CsI」に比べてX線のストッピング特性がよい。
(2)「第2樹脂GOS」の残光特性は、「CsI」の約1/70である。
(3)「樹脂GOS」は、潮解性のない安定した物質である。
続いて、シンチレータ構造体10を構成する構成要素の具体的な材料について説明する。
本実施の形態で使用される蛍光体11aは、例えば、ガドリニウム酸硫化物、または、ガドリニウム-アルミニウム-ガリウムガーネット(GGAG)から構成される。ここで、ガドリウム酸硫化物は、例えば、プラセオジウム(Pr)、セリウム(Ce)あるいはテルビウム(Tb)から選ばれた少なくとも1種類で賦活した「Gd2O2S」の組成を有する。一方、「GGAG」は、例えば、セリウム(Ce)やプラセオジウム(Pr)などから選ばれた少なくとも1種類で賦活した(Gd1-xLux)3+a(GauAl1-u)5-aO12(x=0~0.5、u=0.2~0.6、a=-0.05~0.15)の主組成を有する。ただし、蛍光体11aは、特定の組成物に限定されるものではない。
樹脂11bおよび樹脂12bは、放射線を照射した際に変質劣化しにくい材料から構成される。これらの樹脂11bおよび樹脂12bの材料は、本実施の形態における特徴点であり、この特徴点については後述する。
反射粒子12aの構成材料としては、例えば、「TiO2」(酸化チタン)、「Al2O3」(酸化アルミニウム)、「ZrO2」(酸化ジルコニウム)などの白色粒子を挙げることができる。ここで、反射粒子12aは、例えば、バルクまたは粉体と樹脂の混合物を使用することができる。特に、「ルチル型TiO2」からなる反射粒子12aは、光反射効率に優れており望ましい粒子である。反射粒子12aの光反射率は、受光素子20での受光効率を向上させる観点から、80%以上であることが望ましく、さらに、反射粒子12aの光反射率は、90%以上であることが望ましい。
シンチレータ11および反射層12を構成する反射材には、上述した成分以外に、その他の添加剤が配合されていてもよい。例えば、樹脂の硬化時間を短縮させるために、硬化触媒を配合することが望ましい。
例えば、「樹脂GOS」に含まれる樹脂には、エポキシ樹脂が使用される。このエポキシ樹脂は、少なくとも主剤と硬化剤とを構成材料として含んでおり、例えば、主剤としては、ビスフェノールA型エポキシ樹脂が使用されるとともに、硬化剤としては、アミン系硬化剤が使用されることが多い。ところが、「樹脂GOS」を構成する樹脂として、ビスフェノールA型エポキシ樹脂を主剤とし、かつ、アミン系硬化剤を硬化剤として使用する一般的なエポキシ樹脂を使用する場合、放射線(X線)の照射が長期間にわたって繰り返されると、劣化して変色することを本発明者は新規に見出した。
本実施の形態における特徴点は、少なくとも主剤と硬化剤とを含むエポキシ樹脂として、以下に示すエポキシ樹脂を「樹脂GOS」に含有される樹脂および反射材に含有される樹脂に使用する点である。これにより、本実施の形態におけるシンチレータ構造体を構成要素とするX線検出器の信頼性を長期間にわたって確保することができる。
主剤は、トリアジン誘導体エポキシ樹脂である。トリアジン誘導体エポキシ樹脂としては、例えば、1,3,5-トリアジン誘導体エポキシ樹脂を挙げることができる。そして、1,3,5-トリアジン誘導体エポキシ樹脂は、「イソシアヌレート環」を有するエポキシ樹脂であることが望ましい。なぜなら、「イソシアヌレート環」を骨格に有するエポキシ樹脂は、放射線や熱に対する耐性に優れた安定性を有しており、変色しにくい性質を有しているからである。
硬化剤は、X線照射による変色を抑制するため、炭素二重結合を有さない材料を使用することが望ましい。なぜなら、炭素二重結合は、炭素一重結合よりも結合強度が弱く、X線照射によって炭素二重結合が容易に切断される結果、材料の変色が生じやすくなるからである。例えば、硬化剤としては、無水フタル酸系硬化剤に代表される酸無水物系硬化剤を使用することができる。特に、X線照射による変色を効果的に抑制する観点から、非芳香族かつ炭素二重結合を化学的に有さない多塩基酸カルボン酸無水物のうちの1種類を使用してもよく、2種類以上を併用してもよい。
硬化触媒は、必須構成材料ではないが、主剤の硬化反応を促進する観点からは添加することが望ましい。硬化触媒としては、X線を照射しても変色しにくい有機リン系化合物を使用することが望ましい。具体的に、硬化触媒としては、テトラブチルホスホニウム 0,0-ジエチルホスホロジチオエート(ヒシコ-リンPX-4ET 日本化学工業社製)、メチルトリブチルホスホニウム ジメチルホスフェート(ヒシコ-リンPX-4MP 日本化学工業社製)などを挙げることができる。
上述したトリアジン誘導体エポキシ樹脂を含む「樹脂GOS」によれば、X線照射後においても、「全光線透過率」の低下を抑制することができる検証結果について説明する。
続いて、シンチレータ構造体の製造方法について説明する。
以下では、本実施の形態における技術的思想の効果を裏付ける詳細な検証結果について実施例に基づいて説明する。なお、本実施の形態における技術的思想は、これらの実施例に限定されるものではない。
「GOS」粉体:ガドリニウム酸硫化物(Gd2O2S)
主剤:実施例1 トリアジン誘導体エポキシ樹脂(TEPIC-PAS B22)
実施例2 トリアジン誘導体エポキシ樹脂(TEPIC-VL)
実施例3 トリアジン誘導体エポキシ樹脂(TEPIC-FL)
比較例 水素添加ビスフェノールAジグリシジルエーテル系エポキシ樹脂
(エピクロン840(DIC))
硬化剤:酸無水物(リカシッド MH-T)
硬化触媒:有機リン系化合物(ヒシコ-リン PX-4ET)
<<サンプル作製>>
表2に示す配合量(化学量論量:当量比)で、一次硬化条件(90℃、15時間)および二次硬化条件(120℃、2.5時間)でサンプルを作製した。
サンプルにX線を100kGy照射した後、日本分光製の紫外可視近赤外分光光度計V-570で542nmの波長を有する光に対する「全光線透過率」を測定した。
表2に示すように、X線を照射する前の初期の「全光線透過率」は、実施例1~実施例3および比較例のいずれにおいても、90%以上の値を示している。一方、線量が100kGyのX線を照射した後の「全光線透過率」を見ると、実施例1~実施例3では、80%以上の値となっているのに対し、比較例では、80%に達していない。この結果を「全光線透過率減少率」に換算すると、実施例1~実施例3では、5%未満の低下率となっているのに対し、比較例では、14%以上の低下率となっている。
11 シンチレータ
11a 蛍光体
11b 樹脂
12 反射層
12a 反射粒子
12b 樹脂
20 受光素子
30 支持体
100 X線検出器
CL セル
Claims (9)
- 複数のセルと、
前記複数のセルを覆う反射層と、
を備える、シンチレータ構造体であって、
前記複数のセルのそれぞれは、樹脂と蛍光体とを含み、
前記樹脂は、線量が100kGyのX線を照射した後において、542nmの波長を有する光に対する全光線透過率の低下率が8%未満である、シンチレータ構造体。 - 請求項1に記載のシンチレータ構造体において、
X線を照射する前において、542nmの波長を有する光に対する前記樹脂の初期の全光線透過率は、90%以上である、シンチレータ構造体。 - 請求項1または2に記載のシンチレータ構造体において、
前記樹脂は、
トリアジン誘導体エポキシ樹脂を含む主剤と、
硬化剤と、
硬化触媒と、
を有する、シンチレータ構造体。 - 請求項3に記載のシンチレータ構造体において、
前記トリアジン誘導体エポキシ樹脂は、イソシアヌレート環を有する、シンチレータ構造体。 - 請求項4に記載のシンチレータ構造体において、
前記トリアジン誘導体エポキシ樹脂は、1つのイソシアヌレート環に対して複数のエポキシ基を有する、シンチレータ構造体。 - 請求項5に記載のシンチレータ構造体において、
前記トリアジン誘導体エポキシ樹脂は、1つのイソシアヌレート環に対して3基のエポキシ基を有する、シンチレータ構造体。 - 請求項3~6のいずれか1項に記載のシンチレータ構造体において、
前記硬化剤は、酸無水物系硬化剤である、シンチレータ構造体。 - 請求項7に記載のシンチレータ構造体において、
前記酸無水物系硬化剤は、無水フタル酸系硬化剤である、シンチレータ構造体。 - 請求項3~8のいずれか1項に記載のシンチレータ構造体において、
前記硬化触媒は、有機リン系化合物である、シンチレータ構造体。
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Citations (3)
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JPS63100391A (ja) | 1986-06-20 | 1988-05-02 | Hitachi Medical Corp | 蛍光体成型体および螢光体成型体の製造方法 |
JPH03163391A (ja) * | 1989-11-22 | 1991-07-15 | Toshiba Corp | X線ct用検出器 |
JP2004150932A (ja) * | 2002-10-30 | 2004-05-27 | Toshiba Corp | 放射線平面検出器 |
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2021
- 2021-04-02 JP JP2021063291A patent/JP2022158410A/ja active Pending
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2022
- 2022-02-24 EP EP22779694.3A patent/EP4318049A1/en active Pending
- 2022-02-24 CN CN202280025901.9A patent/CN117136418A/zh active Pending
- 2022-02-24 US US18/549,054 patent/US20240151860A1/en active Pending
- 2022-02-24 WO PCT/JP2022/007652 patent/WO2022209469A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63100391A (ja) | 1986-06-20 | 1988-05-02 | Hitachi Medical Corp | 蛍光体成型体および螢光体成型体の製造方法 |
JPH03163391A (ja) * | 1989-11-22 | 1991-07-15 | Toshiba Corp | X線ct用検出器 |
JP2004150932A (ja) * | 2002-10-30 | 2004-05-27 | Toshiba Corp | 放射線平面検出器 |
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JP2022158410A (ja) | 2022-10-17 |
EP4318049A1 (en) | 2024-02-07 |
US20240151860A1 (en) | 2024-05-09 |
CN117136418A (zh) | 2023-11-28 |
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