WO2022209402A1 - 回路基板の製造方法及び回路基板 - Google Patents
回路基板の製造方法及び回路基板 Download PDFInfo
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- WO2022209402A1 WO2022209402A1 PCT/JP2022/006515 JP2022006515W WO2022209402A1 WO 2022209402 A1 WO2022209402 A1 WO 2022209402A1 JP 2022006515 W JP2022006515 W JP 2022006515W WO 2022209402 A1 WO2022209402 A1 WO 2022209402A1
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- Prior art keywords
- semi
- plate
- circuit board
- metal foil
- cured composite
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
Definitions
- Power conversion devices are indispensable in hybrid vehicles, electric vehicles, electric transportation equipment such as railways, home appliances such as air conditioners that use motors, and industrial equipment.
- a power semiconductor element can be cited as a device with high conversion efficiency.
- a power semiconductor device serves as an electrically controlled switch in a power conversion circuit to maintain an on/off state and to make a state transition between on and off.
- a power semiconductor element blocks current from a power source or a load in an off state, and passes current from the power source or a load in an on state.
- a metal base substrate for example, is used as a substrate on which such a power semiconductor element is mounted in order to ensure excellent heat dissipation and insulation.
- thermosetting resin composition As a method for improving the thermal conductivity of the metal base substrate described in Patent Document 1, for example, a sintered body having an integral structure in which non-oxide ceramic primary particles are three-dimensionally continuous is added with a thermosetting resin composition It is conceivable to use a thermally conductive insulating adhesive sheet (see, for example, Patent Document 2) using a ceramics resin composite impregnated with a material to bond a metal foil to one side of a metal base plate. This thermally conductive insulating adhesive sheet forms a continuous network of non-oxide ceramics, so that the thermal conductivity can be further increased.
- the thermally conductive insulating adhesive sheet described in Patent Document 2 has poor flexibility because it is based on a non-oxide ceramic porous body. Therefore, when the metal foil cut product is attached to the thermally conductive insulating adhesive sheet described in Patent Document 2 laminated on the metal base plate and pressurized, the metal foil cut product is formed in the thermally conductive insulating adhesive sheet. There was a problem that cracks were generated in the peripheral region.
- the present invention is obtained by cutting a metal foil into a semi-cured composite sheet containing porous ceramics and a semi-cured thermosetting composition filling the voids of the porous ceramics.
- the gist of the present invention is as follows. [1] A metal foil cut obtained by cutting a metal foil on a semi-cured composite sheet containing a porous ceramic and a semi-cured thermosetting composition that fills the voids of the porous ceramic.
- a circuit board manufacturing method for manufacturing a circuit board by laminating processed products wherein a plate-like member having an opening that fits with the metal foil cut processed product is placed on the semi-cured composite sheet. a step of fitting the metal foil cut product on the semi-cured composite sheet on which the plate-like member is arranged by fitting it into the opening of the plate-like member; a step of producing a first laminate by heating and pressing the semi-cured composite sheet on which the metal foil cut product is arranged; 2, wherein the absolute value of the difference between the thickness of the metal foil cut product and the thickness of the plate member is 0.25 mm or less (or a semi-cured composite sheet 60% or less of the thickness of the circuit board.
- the plate-shaped member has a first plate-shaped member having an opening that fits with the metal foil cut product, and an opening that fits with the metal foil cut product, and a second plate-like member which is a release sheet for preventing adhesion of the semi-cured composite sheet.
- the step of placing a plate-shaped member on the metal base plate and placing the metal foil cut product includes placing the metal foil cut product on the semi-cured composite sheet placed on the metal base plate
- [5] A metal foil cut obtained by cutting a metal foil on a semi-cured composite sheet containing a porous ceramic and a semi-cured thermosetting composition filling the voids of the porous ceramic.
- a circuit board manufacturing method for manufacturing a circuit board by laminating processed products comprising a step of placing the metal foil cut product on the semi-cured composite sheet, and placing the metal foil cut product. and pressing the semi-cured composite sheet with a pressure of 1.0 to 8.0 MPa while heating to form a laminate.
- a semi-cured composite sheet containing a porous ceramic and a semi-cured thermosetting composition filling the voids of the porous ceramic is obtained by cutting a metal foil. It is possible to provide a method for producing a circuit board that can suppress the occurrence of cracks in a semi-cured composite sheet even when a metal foil cut product is attached and pressurized, and a circuit board obtained by the method. .
- FIG. 1 is a schematic diagram for explaining members used in a method for manufacturing a circuit board according to one embodiment of the present invention.
- 2(a) to 2(d) are schematic diagrams for explaining a method of manufacturing a circuit board according to one embodiment of the present invention.
- FIG. 3(a) is a schematic diagram for explaining the amount of depression of the side surface of the metal pattern
- FIG. 3(b) is a schematic diagram for explaining the amount of expansion of the side surface of the metal pattern.
- FIG. 4 is a schematic diagram for explaining members used in a modification of the method for manufacturing a circuit board according to one embodiment of the present invention.
- 5A to 5E are schematic diagrams for explaining a modification of the circuit board manufacturing method according to one embodiment of the present invention.
- FIG. 1 is a diagram for explaining members used in a method for manufacturing a circuit board according to one embodiment of the present invention.
- FIG. 2 is a diagram for explaining a method of manufacturing a circuit board according to one embodiment of the present invention.
- a method for manufacturing a circuit board according to one embodiment of the present invention comprises a semi-cured material composite sheet 10 containing porous ceramics and a semi-cured material of a thermosetting composition that fills the voids of the porous ceramics.
- a circuit board is manufactured by laminating metal foil cut products 20 obtained by cutting foils.
- the absolute value of the difference between the thickness of the metal foil cut product 20 and the thickness of the plate member 30 is 0.25 mm or less.
- step (A) In step (A), as shown in FIGS. 2A and 2B, a plate-like member 30 (a first plate-like member 30a and a second is placed on the semi-cured composite sheet 10 .
- the semi-cured composite sheet 10 includes porous ceramics and a semi-cured thermosetting composition that fills the voids of the porous ceramics.
- the voids of the porous ceramics can be filled with the thermosetting composition by an impregnation method.
- the porous ceramics may preferably be formed of a sintered body of an insulator containing boron nitride, more preferably a sintered body of boron nitride.
- the porous ceramic is formed of a boron nitride sintered body
- the boron nitride sintered body may be formed by sintering together primary particles of boron nitride. Both amorphous boron nitride and hexagonal boron nitride can be used as boron nitride.
- a boron nitride sintered body can also be obtained by
- the median pore diameter of the pores in the porous ceramic may be, for example, 0.5 ⁇ m or more, and from the viewpoint that the thermosetting composition can be suitably filled into the pores, it is preferably 0.6 ⁇ m or more, more preferably 0. 0.8 ⁇ m or more, more preferably 1 ⁇ m or more.
- the average pore diameter of the pores is preferably 4.0 ⁇ m or less, 3.0 ⁇ m or less, 2.5 ⁇ m or less, 2.0 ⁇ m or less, or 1.5 ⁇ m or less from the viewpoint of improving the insulation of the semi-cured composite sheet. is.
- the median pore diameter of the pores in the porous ceramic is the pore diameter distribution (horizontal axis: pore diameter, vertical axis: cumulative pore volume) measured using a mercury porosimeter. Defined as the pore size reaching 50%.
- the mercury porosimeter a mercury porosimeter manufactured by Shimadzu Corporation can be used, and the pressure is increased from 0.03 atmosphere to 4000 atmospheres for measurement.
- the proportion of pores in the porous ceramics is preferably based on the total volume of the porous body, from the viewpoint of suitably improving the strength of the semi-cured composite by filling with the thermosetting composition. is 10% by volume or more, 20% by volume or more, or 30% by volume or more, and from the viewpoint of improving the insulation and thermal conductivity of the semi-cured composite, preferably 70% by volume or less, more preferably 60% by volume 50% by volume or less, more preferably 50% by volume or less.
- the proportion of the porous ceramics in the semi-cured composite sheet is preferably 30% by volume or more, more preferably 40% by volume or more, from the viewpoint of improving the insulation and thermal conductivity of the semi-cured composite sheet. It is preferably at least 50% by volume.
- the proportion of the porous ceramics in the semi-cured composite sheet may be, for example, 90% by volume or less, 80% by volume or less, 70% by volume or less, or 60% by volume or less.
- thermosetting composition is a composition containing a thermosetting compound.
- the thermosetting composition contains, for example, an epoxy compound and a cyanate compound as thermosetting compounds.
- cyanate compounds include dimethylmethylenebis(1,4-phenylene)biscyanate and bis(4-cyanatophenyl)methane.
- Dimethylmethylenebis(1,4-phenylene)biscyanate is commercially available, for example, as TA-CN (trade name, manufactured by Mitsubishi Gas Chemical Company, Inc.).
- ester compounds include diphenyl phthalate and benzyl 2-ethylhexyl phthalate.
- the ester compound may be an active ester compound.
- An active ester compound is a compound having one or more ester bonds in its structure and having aromatic rings bonded to both sides of the ester bond.
- the content of the curing agent is preferably 0.1% by mass or more, more preferably 5% by mass or more, based on the total amount of the thermosetting composition. It is preferably 7% by mass or more, preferably 30% by mass or less, more preferably 20% by mass or less, and even more preferably 15% by mass or less.
- imidazole derivatives include 1-(1-cyanomethyl)-2-ethyl-4-methyl-1H-imidazole, 2-ethyl-4-methylimidazole, 2-methylimidazole, 2-phenylimidazole, 1-cyanoethyl-2-phenyl imidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,4,5-triphenylimidazole and the like.
- Amine compounds include dicyandiamide, triethylamine, tributylamine, tri-n-octylamine, 1,4-diazabicyclo[2.2.2]octane, 1,8-diazabicyclo[5.4.0]undec-7-ene , benzyldimethylamine, 4-methyl-N,N-dimethylbenzylamine, 2,4,6-tris(dimethylaminomethyl)phenol, 4-dimethylaminopyridine and the like.
- cationic polymerization initiators examples include benzylsulfonium salts, benzylammonium salts, benzylpyridinium salts, benzylphosphonium salts, hydrazinium salts, carboxylic acid ester compounds, sulfonic acid ester compounds, amine imides, antimony pentachloride-acetyl chloride complex, diaryliodonium salts- dibenzyloxy copper and the like.
- the content of the curing accelerator described above is 0.001 parts by mass or more, 0.01 parts by mass or more, or 0.01 part by mass or more with respect to a total of 100 parts by mass of the epoxy compound, the cyanate compound, and optionally the curing agent for the epoxy compound.
- 05 parts by mass or more and may be 1 part by mass or less, 0.8 parts by mass or less, 0.5 parts by mass or less, 0.3 parts by mass or less, or 0.1 parts by mass or less.
- the semi-cured composite comprises the semi-cured thermosetting composition described above.
- a semi-cured product of a thermosetting composition refers to a cured product in which the curing reaction of the thermosetting composition has partially progressed.
- the semi-cured product contains a reaction product (cured product) of an epoxy compound and a cyanate compound and an uncured epoxy compound.
- the semi-cured product may partially contain an uncured cyanate compound, and may also partially contain a cured product of an epoxy compound (for example, a cured product obtained by curing an epoxy compound by self-polymerization reaction). .
- the inclusion of the semi-cured material in the semi-cured composite can be confirmed by measuring the adhesive strength of the semi-cured composite measured by the following method.
- the semi-cured composite is formed into a sheet by the method described later, and this sheet is placed between two copper plates, heated and pressed under conditions of 200 ° C. and 10 MPa for 5 minutes, and further heated to 200 ° C. and 10 MPa.
- a laminate is obtained by heating for 2 hours under atmospheric pressure conditions.
- JIS K 6854-1 1999 "Adhesive-Peeling adhesive strength test method”
- a 90° peeling test is performed to measure the area of the cohesive failure portion.
- the area of the cohesive failure portion is 30 area % or more, it can be said that the semi-cured material is contained in the semi-cured material composite.
- the method for producing a semi-cured composite sheet includes a step of impregnating a porous body with a thermosetting composition containing an epoxy compound and a cyanate compound (impregnation step); It comprises a step of heating the body at temperature T1 at which the cyanate compound reacts (semi-curing step), and a step of slicing the porous body impregnated with the thermosetting composition (sheeting step).
- the thermosetting composition may be impregnated into a sheet-formed porous body in advance without going through the step of slicing the porous body.
- the porous body described above is prepared.
- the porous body may be produced by sintering raw materials, or a commercially available product may be used.
- the porous body is a sintered body of an inorganic compound
- the porous body can be obtained by sintering powder containing the inorganic compound.
- the impregnation step includes a step of sintering a powder containing an inorganic compound (hereinafter also referred to as an inorganic compound powder) to obtain a sintered body of the inorganic compound, which is a porous body.
- the sintered body of the inorganic compound may be prepared by subjecting the slurry containing the powder of the inorganic compound to a spheroidization treatment using a spray dryer or the like, further molding the resulting sintered body, and then sintering it to prepare a sintered body that is a porous body.
- a mold press molding method may be used, or a cold isostatic pressing (CIP) method may be used.
- a sintering aid may be used during sintering.
- the sintering aid may be, for example, yttria oxide, oxides of rare earth elements such as alumina oxide and magnesium oxide, alkali metal carbonates such as lithium carbonate and sodium carbonate, and boric acid.
- the amount of the sintering aid added is, for example, 0.01 parts by mass or more, or 0.1 parts by mass with respect to a total of 100 parts by mass of the inorganic compound and the sintering aid. or more.
- the amount of the sintering aid added may be 20 parts by mass or less, 15 parts by mass or less, or 10 parts by mass or less with respect to a total of 100 parts by mass of the inorganic compound and the sintering aid.
- the sintering temperature of the inorganic compound may be, for example, 1600°C or higher or 1700°C or higher.
- the nitride sintering temperature may be, for example, 2200° C. or lower, or 2000° C. or lower.
- the sintering time of the inorganic compound may be, for example, 1 hour or more and 30 hours or less.
- the atmosphere during sintering may be, for example, an inert gas atmosphere such as nitrogen, helium, and argon.
- a batch type furnace and a continuous type furnace can be used.
- Batch type furnaces include, for example, muffle furnaces, tubular furnaces, atmosphere furnaces, and the like.
- continuous furnaces include rotary kilns, screw conveyor furnaces, tunnel furnaces, belt furnaces, pusher furnaces, and koto-shaped continuous furnaces.
- thermosetting composition a solution containing a thermosetting composition is prepared in an impregnation device, and the porous body is immersed in the solution, or the solution containing the thermosetting composition is applied to the porous body in an air atmosphere. By coating, the pores of the porous body are impregnated with the thermosetting composition.
- the impregnation step may be performed under atmospheric conditions, under reduced pressure conditions, or under pressurized conditions, or may be performed in combination with impregnation under reduced pressure conditions and impregnation under pressurized conditions.
- the pressure in the impregnation device when the impregnation step is performed under reduced pressure conditions may be, for example, 1000 Pa or less, 500 Pa or less, 100 Pa or less, 50 Pa or less, or 20 Pa or less.
- the pressure in the impregnation device when the impregnation step is performed under pressurized conditions may be, for example, 1 MPa or higher, 3 MPa or higher, 10 MPa or higher, or 30 MPa or higher.
- the thermosetting composition When impregnating the thermosetting composition into the porous body, the thermosetting composition may be heated. By heating the thermosetting composition, the viscosity of the solution is adjusted and impregnation into the porous body is promoted.
- the temperature at which the thermosetting composition is heated for impregnation may be above the temperature T1 described below. In this case, the temperature at which the thermosetting composition is heated for impregnation may be lower than the temperature T2 in the curing step described below.
- the upper limit of the temperature for heating the thermosetting composition may be the temperature T1+20° C. or lower.
- the porous body impregnated with the thermosetting composition is heated at a temperature T1 at which the cyanate compound reacts.
- the cyanate compound contained in the thermosetting composition reacts to obtain a semi-cured product.
- the cyanate compounds may react with each other, or the cyanate compound and a part of the epoxy compound may react.
- the equivalent ratio of the epoxy group of the epoxy compound to the cyanato group of the cyanate compound is 1.0 or more. That is, the semi-cured product contains an epoxy compound in excess of the cyanate compound in terms of epoxy equivalent, and these epoxy compounds remain in an uncured state. As a result, a semi-cured product of the thermosetting composition is obtained.
- the temperature T1 is preferably 70°C or higher, more preferably 80°C or higher, and even more preferably 90°C or higher.
- the temperature T1 is preferably 180° C. or lower, more preferably 150° C. or lower, and even more preferably 120° C. or lower, from the viewpoint of reducing the change in viscosity over time.
- the temperature T1 refers to the atmospheric temperature when heating the porous body impregnated with the thermosetting composition.
- the heating time in the semi-curing step may be 1 hour or more, 3 hours or more, or 5 hours or more, and may be 12 hours or less, 10 hours or less, or 8 hours or less.
- thermosetting composition for example, a wire saw is used to slice the porous body impregnated with the thermosetting composition.
- a semi-cured composite sheet having a desired thickness can be obtained.
- the porous body before being impregnated with the thermosetting composition is sliced to prepare a sheet-shaped porous body, and the sheet-shaped porous body is impregnated with the thermosetting composition to obtain a cured product.
- a composite sheet may be obtained.
- a cured composite sheet may be obtained by molding and sintering the porous body into a sheet at the stage of producing the porous body, and impregnating the sheet-shaped porous body with the thermosetting composition.
- Materials constituting the first plate member 30a include, for example, metals such as copper, aluminum, iron, nickel, magnesium, and alloys thereof, polyamide, polyimide, polyacetal, polycarbonate, polyphenylene sulfide, polytetrafluoroethylene, and the like. plastics, and ceramics such as aluminum nitride and silicon nitride.
- metals such as copper, aluminum, iron, nickel, magnesium, and alloys thereof
- plastics, and ceramics such as aluminum nitride and silicon nitride.
- the coefficient of thermal expansion of the shaped member 30a is preferably close to or the same as the coefficient of thermal expansion of the metal foil cut product 20.
- the material forming the first plate member 30 a is preferably the same as the material forming the metal foil cut product 20 .
- the second plate-like member 30b is not particularly limited as long as it is a plate-like or sheet-like member that is releasable from the semi-cured composite sheet 10. From the viewpoint of releasability and heat resistance from the semi-cured composite sheet 10, the second plate-like member 30b is preferably a fluororesin sheet and a silicone resin, more preferably a fluororesin.
- the second plate-shaped member 30b is a plastic such as polyethylene terephthalate, polypropylene, and polyethylene, which has been subjected to a release treatment using a release agent such as a silicone release agent, an alkyl pendant release agent, or a condensed wax release agent. It may be a sheet.
- the openings 31 of the first plate-like member 30a and the second plate-like member 30b can be formed by a normal cutting method.
- Cutting methods include, for example, cutting methods, abrasive processing methods, water jet processing methods, fusion cutting methods, laser processing methods, electron beam processing methods, removal cutting processing methods such as electric discharge processing methods, shear processing methods, knife Examples include destructive cutting processing methods such as blade cutting processing methods.
- the destructive cutting method is preferable from the viewpoint of cutting efficiency, and the shearing method is more preferable from the viewpoint of controlling the cutting contour and cut surface properties. In this case, what is removed becomes scrap, and the hole side becomes the product. Since the shearing method requires a mold, the openings 31 of the first plate-like member 30a and the second plate-like member 30b may be formed by the removal cutting method in the prototype stage. good.
- Step (B) In the step (B), as shown in FIG. 2(c), the metal foil is cut onto the semi-cured composite sheet 10 on which the plate-like member 30 is arranged by fitting it into the opening 31 of the plate-like member 30. A workpiece 20 is placed. As a result, the metal foil cut product 20 can be accurately arranged at the intended position.
- the metal foil cut product 20 is a product obtained by cutting a metal foil, and is a part of the metal pattern 3 formed on the surface of the circuit board 1 as shown in FIGS. Or have the same contour as all contours.
- Materials constituting the metal foil cut product 20 include, for example, copper, aluminum, nickel, iron, tin, gold, silver, molybdenum, titanium, and stainless steel. These metals can be used individually by 1 type or in combination of 2 or more types. Among these metals, copper and aluminum are preferred, and copper is more preferred, from the viewpoint of electrical conductivity and cost.
- the metal foil cut product 20 is obtained by cutting a metal foil.
- the method of cutting the metal foil to obtain the metal foil cut product 20 is not particularly limited as long as the metal foil can be cut.
- the metal foil cutting method for obtaining the metal foil cut product 20 includes, for example, a cutting method, an abrasive grain processing method, a water jet processing method, a fusion cutting method, a laser processing method, an electron beam processing method, and an electric discharge processing method.
- destructive cutting processing methods such as removal cutting processing methods such as a method, shearing processing methods, knife blade cutting processing methods, and the like. Among these cutting methods, the destructive cutting method is preferable from the viewpoint of cutting efficiency, and the shearing method is more preferable from the viewpoint of controlling the cutting contour and cut surface properties.
- the thickness of the metal foil cut product 20 is preferably 0.3 mm or more, more preferably 0.5 mm or more. Yes, more preferably 1.0 mm or more. From the viewpoint of downsizing the power module, the thickness of the metal foil cut product 20 is preferably 5.0 mm or less, more preferably 4.0 mm or less, and still more preferably 3.0 mm or less. .
- Step (C) In the step (C), the semi-cured composite sheet 10 on which the plate members 30 (30a, 30b) and the metal foil cut product 20 are arranged is heated and pressed to form a first laminate 41 (Fig. 2(c) )). At this time, even in the region where the metal foil cut product 20 of the semi-cured composite sheet 10 is not arranged, the metal foil cut product of the semi-cured composite sheet 10 is cut by the plate-like members 30 (30a, 30b). It will be pressurized in the same way as the area where 20 is located. As a result, a deviation in the thickness direction occurs at the boundary between the area where the metal foil cut product 20 is arranged and the area where the metal foil cut product 20 is not arranged in the semi-cured composite sheet 10. can be suppressed. As a result, the occurrence of cracks in the semi-cured composite sheet 10 can be suppressed.
- the difference between the thickness of the metal foil cut product 20 and the thickness of the plate-like member 30 (total thickness of the thickness of the first plate-like member 30a and the thickness of the second plate-like member 30b)
- the absolute value is 0.25 mm or less. If the absolute value of the difference between the thickness of the metal foil cut product 20 and the thickness of the plate member 30 is greater than 0.25 mm, the metal foil cutting in the semi-cured composite sheet 10 is performed in step (C). A large deviation in the thickness direction occurs at the boundary between the area where the workpiece 20 is arranged and the area where the metal foil cut workpiece 20 is not arranged. As a result, cracks occur in the semi-cured composite sheet 10 .
- the thickness of the metal foil cut product 20 and the thickness of the plate member 30 (the thickness of the first plate member 30a and the thickness of the second plate
- the absolute value of the difference between the total thicknesses of the shaped members 30b is preferably 0.25 mm or less, more preferably 0.10 mm or less, and even more preferably 0 mm.
- the absolute value of the difference between the thickness of the metal foil cut product 20 and the thickness of the plate member 30 is The thickness of the sheet 10 may preferably be 60% or less, more preferably 30% or less, and even more preferably 10% or less.
- step (D) In step (D), as shown in FIG. 2(d), the plate member 30 (30a, 30b) is removed from the first laminate 41 to produce the second laminate 42. Next, as shown in FIG. As a result, the cured product composite layer 2 containing the porous ceramics and the cured product of the thermosetting composition filling the voids of the porous ceramics, and the metal pattern 3 provided on the surface of the cured product composite layer 2 and the value obtained by dividing the amount of depression of the side surface of the metal pattern 3 by the thickness of the metal pattern 3 and the value obtained by dividing the amount of spread of the side surface of the metal pattern 3 by the thickness of the metal pattern 3 are 0.055 or less.
- a circuit board 1 can be obtained.
- the recess amount of the side surface of the metal pattern 3 is based on the edge of the surface 32 opposite to the surface of the metal pattern 3 on the side of the cured product composite layer. is the depth (d1) of the part of the side surface of the metal pattern 3 that is most recessed inside.
- the amount of spread of the side surface of the metal pattern 3 is based on the edge of the surface 32 opposite to the surface of the metal pattern 3 on the side of the cured product composite layer. is the amount of spread (d2) of the portion that spreads most outside of the metal pattern 3 on the side surface of .
- the metal pattern 3 is formed by etching, the etching progresses not only in the thickness direction of the metal pattern 3, but also in an unintended lateral direction. Therefore, in general, a value obtained by dividing the recess amount (d1) of the side surface of the metal pattern 3 by the thickness of the metal pattern 3 and a value obtained by dividing the spread amount (d2) of the side surface of the metal pattern 3 by the thickness of the metal pattern 3 is greater than 0.055.
- the metal pattern 3 is formed by a cutting method, particularly by a shearing method. properties can be precisely controlled.
- the value obtained by dividing the recess amount of the side surface of the metal pattern 3 by the thickness of the metal pattern 3 and the value obtained by dividing the spread amount of the side surface of the metal pattern 3 by the thickness of the metal pattern 3 are 0.055 or less, preferably It can be 0.04 or less, more preferably 0.02 or less, and still more preferably 0.01 or less.
- the lower limit of the range of values is, for example, 0.00.
- the side surface of the metal pattern formed by etching is the side surface formed by removing the metal foil, it becomes a removal processing surface. Therefore, when the side surface of the metal pattern 3 of the circuit board 1 is a side surface formed by the destructive cutting method, it becomes a destructive surface. .
- the side surface of the metal pattern 3 of the circuit board 1 is a side surface obtained by shearing a metal foil, it includes a sheared surface and a fractured surface.
- a sheared surface is a surface that has received a large amount of shear strain due to the biting of the tool, and is a glossy smooth portion that has been burnished by the side surface of the tool.
- the fractured surface is a portion where a crack is generated and fractured, so that the crystal grain surface appears and has fine unevenness. Such shear planes and fracture planes do not appear on the sides of the metal pattern formed by etching.
- Materials constituting the metal base plate 50 include, for example, copper, aluminum, nickel, iron, tin, gold, silver, molybdenum, titanium, and stainless steel. These metals can be used individually by 1 type or in combination of 2 or more types. Among these metals, copper and aluminum are preferred from the viewpoint of thermal conductivity and cost. Moreover, the metal base plate is not limited to a plate shape, and may be processed into a fin or pin shape.
- the thickness of the metal base plate 50 is preferably 0.3 mm or more, more preferably 1.0 mm or more, and still more preferably 3.0 mm or more. From the viewpoint of downsizing the power module, the thickness of the metal base plate 50 is preferably 50.0 mm or less, more preferably 30.0 mm or less, and even more preferably 15.0 mm or less.
- ⁇ Modification 3> When the metal foil cut product is attached to the semi-cured composite sheet and pressed, the area of the semi-cured composite sheet where the metal foil cut product is arranged and the metal foil cut product is not arranged.
- a method of setting the pressurization conditions in the step (C) to 1.0 to 8.0 MPa without using a plate-like member is also possible. good.
- the pressurization condition in step (C) is preferably 2.0 to 7.0 MPa, more preferably 3.0 to 6.0 MPa.
- FIG. A circuit board 1 of one embodiment of the present invention includes a cured composite layer 2 containing porous ceramics and a cured thermosetting composition that fills the voids of the porous ceramics, and a cured composite layer 2 and a metal pattern 3 provided on the surface of the The value obtained by dividing the recess amount (d1) of the side surface of the metal pattern 3 by the thickness of the metal pattern 3 and the value obtained by dividing the spread amount (d2) of the side surface of the metal pattern 3 by the thickness of the metal pattern 3 are 0.0. 055 or less.
- the cured product composite layer 2 and the metal pattern 3 of the circuit board 1 are the same as those described in the item of the method for manufacturing the circuit board of the embodiment of the present invention, the cured product of the circuit board 1 Descriptions of the composite layer 2 and the metal pattern 3 are omitted.
- the circuit board of one embodiment of the present invention has excellent insulating properties because cracks do not occur or occur very little.
- the dielectric breakdown voltage measured by the method described in Examples is 3.5 kV or higher. If the dielectric breakdown voltage is less than 3.5 kV, the voltage resistance of the circuit board may be insufficient for use in power modules. From this point of view, the dielectric breakdown voltage of the circuit board according to one embodiment of the present invention is preferably 4.5 kV or more.
- the upper limit of the dielectric breakdown voltage range of the circuit board according to the embodiment of the present invention is not particularly limited, it is, for example, 10 kV.
- the mixed powder was filled in a mold and press-molded at a pressure of 5 MPa to obtain a compact.
- a cold isostatic press (CIP) device manufactured by Kobe Steel, Ltd., trade name: ADW800
- the compact was compressed by applying a pressure of 20 to 100 MPa.
- the compressed molded body is held at 2000 ° C. for 10 hours using a batch-type high-frequency furnace (manufactured by Fuji Dempa Kogyo Co., Ltd., product name: FTH-300-1H) to sinter the boron nitride porous body. made.
- the firing was carried out by adjusting the inside of the furnace to a nitrogen atmosphere while flowing nitrogen into the furnace at a flow rate of 10 L/min in a standard state.
- the average pore diameter of the pores of the obtained boron nitride porous body was 3.5 ⁇ m.
- the porosity of the obtained boron nitride porous body was 45.0% by volume.
- thermosetting composition (Preparation of thermosetting composition) The following raw materials were used to prepare the thermosetting composition.
- Epoxy compound trade name “HP-4032D”, DIC Corporation cyanate compound: trade name “TA-CN”, Mitsubishi Gas Chemical Co., Ltd.
- Benzoxazine compound trade name “F-a type benzoxazine”, Shikoku Kasei Kogyo Metal-based curing accelerator manufactured by Co., Ltd.: Bis (2,4-pentanedionato) zinc (II), manufactured by Tokyo Chemical Industry Co., Ltd.
- the container containing the boron nitride porous material and the thermosetting composition is taken out, placed in a pressure heating impregnation device (trade name “HP-4030AA-H45”, manufactured by Kyoshin Engineering Co., Ltd.), and impregnated at 130 ° C.
- the boron nitride porous body was further impregnated with the thermosetting composition by holding for 120 minutes under the conditions of temperature and impregnation pressure of 3.5 MPa.
- thermosetting composition After that, the boron nitride porous body impregnated with the thermosetting composition is taken out from the apparatus, and the boron nitride porous body impregnated with the thermosetting composition is heated for a predetermined time under the conditions of a heating temperature of 120 ° C. and atmospheric pressure. As a result, the thermosetting composition was semi-cured, and a boron nitride porous body in which the voids were filled with the semi-cured thermosetting composition was produced.
- Metal foil cut product 1 Copper foil (manufactured by Hakudo Co., Ltd., trade name “Oxygen-free copper cutting plate JIS H3100 C1020P”, thickness: 3 mm) punched (size: 15 mm ⁇ 15 mm ⁇ 3 mm) (Fig. 1 metal foil cut product 20).
- Metal foil cut product 2 Copper foil (manufactured by Hakudo Co., Ltd., trade name “Oxygen-free copper cutting plate JIS H3100 C1020P”, thickness: 1 mm) punched (size: 15 mm ⁇ 15 mm ⁇ 1 mm) (Fig. 1 metal foil cut product 20).
- a circuit board 3 was manufactured in the same manner as the circuit board 1 except that the plate-like member 1 and the plate-like member 3 were not arranged and the pressure for bonding was changed from 15 MPa to 5 MPa.
- a dry film resist is laminated on the copper foil 1, and a photomask is used to irradiate UV light only on the portion of the dry film resist corresponding to the metal pattern, thereby removing the portion of the dry film resist corresponding to the metal pattern. only hardened. Then, after the dry film resist is developed, a sulfuric acid/hydrogen peroxide etchant is used to remove the portion of the copper foil of the laminate where the dry film resist is not laminated, and the dry film resist is peeled off to form a circuit.
- a circuit board 7 having four electrodes of 15 mm ⁇ 15 mm ⁇ 3 mm on its surface was fabricated in the same manner as the substrate 1 .
- a circuit board was cut in the thickness direction to prepare a sample that allows observation of the cross section of the circuit board. After embedding the cut sample in resin, the portion corresponding to the cross section of the circuit board of the sample was wet-polished using an automatic polisher. After drying the polished sample, the polished surface was coated with osmium. Then, using a scanning electron microscope (SEM) (trade name "JCM-6000Plus", manufactured by JEOL Ltd.) to observe the side surface of the metal pattern, the thickness of the metal pattern, the amount of recession on the side surface of the metal pattern (d1) and the spread amount (d2) of the side surface of the metal pattern were measured.
- SEM scanning electron microscope
- a value obtained by dividing the recess amount of the side surface of the metal pattern by the thickness of the metal pattern and a value obtained by dividing the spread amount of the side surface of the metal pattern by the thickness of the metal pattern were calculated. Since metal patterns are generally required to have vertical side surfaces, the shape characteristics of the side surfaces of the metal patterns were evaluated according to the following criteria. A: Both the value obtained by dividing the amount of depression of the side surface of the metal pattern by the thickness of the metal pattern and the value obtained by dividing the amount of expansion of the side surface of the metal pattern by the thickness of the metal pattern are 0.04 or less.
- the metal foil cut product is attached to the porous boron nitride sheet and pressurized, cracks do not occur in the porous boron nitride sheet. all right.
- the metal foil cut product is attached to the porous boron nitride sheet, and the pressure is 1.0 to 8.0 MPa. It was found that no cracks occurred in the porous boron nitride sheet when pressurized with .
- the metal foil cut product is attached to the porous boron nitride sheet, and the pressure is applied at a pressure higher than 8.0 MPa. It was found that the porous boron nitride sheet cracked when pressed. Further, when a metal pattern is formed by etching from the circuit board 7 and the circuit board 8 of the comparative example, the value obtained by dividing the recess amount of the side surface of the metal pattern by the thickness of the metal pattern and the spread amount of the side surface of the metal pattern are calculated.
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Abstract
Description
[1]多孔質セラミックスと、前記多孔質セラミックスの空隙を充填する熱硬化性組成物の半硬化物とを含む半硬化物複合体シートに、金属箔を切断加工して得られた金属箔切断加工品を積層して回路基板を製造する回路基板の製造方法であって、前記金属箔切断加工品と嵌合する開口部を有する板状部材を前記半硬化物複合体シートの上に配置する工程と、前記板状部材の開口部に嵌合させて、前記板状部材を配置した前記半硬化物複合体シートの上に前記金属箔切断加工品を配置する工程と、前記板状部材及び前記金属箔切断加工品を配置した前記半硬化物複合体シートを加熱しながら加圧して第1の積層体を作製する工程と、前記第1の積層体から前記板状部材を除去して第2の積層体を作製する工程とを含み、前記金属箔切断加工品の厚さ及び前記板状部材の厚さの間の差の絶対値が0.25mm以下(または、半硬化物複合体シートの厚みに対し60%以下)である回路基板の製造方法。
[2]前記板状部材が、前記金属箔切断加工品と嵌合する開口部を有する第1の板状部材と、前記金属箔切断加工品と嵌合する開口部を有し、前記第1の板状部材及び前記半硬化物複合シートの接着を防ぐ剥離シートである第2の板状部材とからなる上記[1]に記載の回路基板の製造方法。
[3]前記板状部材の材料もしくは前記第1の板状部材の材料が前記金属箔切断加工品の材料と同じである上記[1]または[2]に記載の回路基板の製造方法。
[4]メタルベース板の上に前記半硬化物複合体シートを配置する工程をさらに含み、前記板状部材を配置する工程は、前記メタルベース板の上に配置した前記半硬化物複合体シートの上に板状部材を配置し、前記金属箔切断加工品を配置する工程は、前記メタルベース板の上に配置した前記半硬化物複合体シートの上に前記金属箔切断加工品を配置する上記[1]~[3]のいずれか1つに記載の回路基板の製造方法。
[5]多孔質セラミックスと、前記多孔質セラミックスの空隙を充填する熱硬化性組成物の半硬化物とを含む半硬化物複合体シートに、金属箔を切断加工して得られた金属箔切断加工品を積層して回路基板を製造する回路基板の製造方法であって、前記半硬化物複合体シートの上に前記金属箔切断加工品を配置する工程と、前記金属箔切断加工品を配置した前記半硬化物複合体シートを加熱しながら、1.0~8.0MPaの圧力で加圧して積層体を作製する工程とを含む回路基板の製造方法。
[6]前記第1の積層体、前記第2の積層体または前記積層体を加熱して硬化させる工程をさらに含む上記[1]~[5]のいずれか1つに記載の回路基板の製造方法。
[7]多孔質セラミックスと、前記多孔質セラミックスの空隙を充填する熱硬化性組成物の硬化物とを含む硬化物複合体層と、前記硬化物複合体層の表面に設けられた金属パターンとを含み、前記金属パターンの側面の凹み量を前記金属パターンの厚さで割り算した値及び前記金属パターンの側面の広がり量を前記金属パターンの厚さで割り算した値が0.055以下であり、絶縁破壊電圧が3.5kV以上である回路基板。
[8]前記硬化物複合体層の前記金属パターン側の面とは反対側の面に設けられたメタルベース板をさらに含む上記[7]に記載の回路基板。
図1及び図2を参照して、本発明の一実施形態の回路基板の製造方法を説明する。図1は、本発明の一実施形態の回路基板の製造方法で使用する部材を説明するための図である。図2は、本発明の一実施形態の回路基板の製造方法を説明するための図である。
工程(A)では、図2(a)及び(b)に示すように、金属箔切断加工品20と嵌合する開口部31を有する板状部材30(第1の板状部材30a及び第2の板状部材30b)を半硬化物複合体シート10の上に配置する。
半硬化物複合シート10は、多孔質セラミックスと、多孔質セラミックスの空隙を充填する熱硬化性組成物の半硬化物とを含む。例えば、含浸法により、多孔質セラミックスの空隙を熱硬化性組成物で充填することができる。
気孔率(体積%)=[1-(D1/D2)]×100
に従って算出される。
板状部材30は、図1に示すように、金属箔切断加工品20と嵌合する開口部31を有する。板状部材30は、図1に示すように、金属箔切断加工品20と嵌合する開口部31を有する第1の板状部材30aと、金属箔切断加工品20と嵌合する開口部31を有し、第1の板状部材30a及び半硬化物複合シート10の接着を防ぐ剥離シートである第2の板状部材30bとからなることが好ましい。なお、この場合、板状部材30の厚さは、第1の板状部材30aの厚さ及び第2の板状部材30bの厚さの合計の厚さである。この場合、工程(A)では、図2(a)に示すように、第2の板状部材30bを半硬化物複合体シート10の上に配置し、その後、図2(b)に示すように、第1の板状部材30aを第2の板状部材30bの上に配置する。
工程(B)では、図2(c)に示すように、板状部材30の開口部31に嵌合させて、板状部材30を配置した半硬化物複合体シート10の上に金属箔切断加工品20を配置する。これにより、目的とする位置に金属箔切断加工品20を正確に配置することができる。
金属箔切断加工品20は、金属箔を切断加工して得られた加工品であり、図1及び図2(d)に示すように、回路基板1の表面に形成する金属パターン3の一部または全部の輪郭と同じ輪郭を有する。金属箔切断加工品20を構成する材料には、例えば、銅、アルミニウム、ニッケル、鉄、スズ、金、銀、モリブデン、チタニウム、ステンレスなどが挙げられる。これらの金属は、1種を単独で又は2種以上を組み合わせて使用することができる。これらの金属の中で、電気伝導率の観点及びコストの観点から、銅及びアルミニウムが好ましく、銅がより好ましい。
工程(C)では、板状部材30(30a、30b)及び金属箔切断加工品20を配置した半硬化物複合体シート10を加熱しながら加圧して第1の積層体41(図2(c)参照)を作製する。このとき、板状部材30(30a、30b)によって、半硬化物複合体シート10の金属箔切断加工品20が配置されていない領域においても、半硬化物複合体シート10の金属箔切断加工品20が配置されている領域と同様に加圧されることになる。これにより、半硬化物複合体シート10における金属箔切断加工品20が配置されている領域と金属箔切断加工品20が配置されていない領域との間の境界で生じる厚さ方向のズレの発生を抑制できる。その結果、半硬化物複合体シート10のクラック発生を抑制できる。
工程(D)では、図2(d)に示すように、第1の積層体41から板状部材30(30a.30b)を除去して第2の積層体42を作製する。これにより、多孔質セラミックスと、多孔質セラミックスの空隙を充填する熱硬化性組成物の硬化物とを含む硬化物複合体層2と、硬化物複合体層2の表面に設けられた金属パターン3とを含み、金属パターン3の側面の凹み量を金属パターン3の厚さで割り算した値及び金属パターン3の側面の広がり量を金属パターン3の厚さで割り算した値が0.055以下である回路基板1を得ることができる。
本発明の一実施形態の回路基板の製造方法は、以下のように変形することができる。
<変形例1>
図4に示すように、本発明の一実施形態の回路基板の製造方法の変形例では、メタルベース板50をさらに使用してもよい。そして、回路基板1A(図5(e)参照)は、硬化物複合体層2の金属パターン側の面とは反対側の面に設けられたメタルベース板4をさらに含むことになる。これにより、回路基板1Aの強度及び放熱性が改善される。本発明の一実施形態の回路基板の製造方法の変形例は、メタルベース板50の上に半硬化物複合体シート10を配置する工程(図5(a)参照)をさらに含む。その結果、工程(A)は、メタルベース板50の上に配置した半硬化物複合体シート10の上に板状部材30(30a,30b)を配置し(図5(b)及び(c)参照)、工程(B)は、メタルベース板50の上に配置した半硬化物複合体シート10の上に金属箔切断加工品20を配置し(図5(d)参照)、工程(C)では、メタルベース板50の上に配置され、板状部材30(30a,30b)及び金属箔切断加工品20を配置した半硬化物複合体シート10を加熱しながら加圧して第1の積層体41Aを作製し(図5(d)参照)、工程(D)では、第1の積層体41Aから板状部材30(30a,30b)を除去して第2の積層体42Aを作製することになる(図5(e)参照)。
本発明の一実施形態の回路基板の製造方法の変形例は第1の積層体41または第2の積層体42を加熱して硬化させる工程をさらに含んでもよい。これにより、半硬化物複合体シート10中の半硬化物を、より確実に硬化させることができる。この工程における加熱温度は、好ましくは130~250℃であり、より好ましくは150~200℃であり、加熱時間は、好ましくは5分~24時間であり、より好ましくは60分~5時間である。上記加熱温度まで、一定の昇温速度で連続的に加熱温度を昇温してもよいし、段階的に加熱温度を昇温してもよい。例えば、250℃の加熱温度まで段階的に加熱温度を昇温する場合、所定の昇温速度で150℃の加熱温度まで昇温した後、150℃の加熱温度で6時間保持し、所定の昇温速度で150℃の加熱温度から180℃の加熱温度まで昇温した後、180℃の加熱温度で4時間保持し、所定の昇温速度で180℃の加熱温度から200℃の加熱温度まで昇温した後、200℃の加熱温度で4時間保持し、所定の昇温速度で200℃の加熱温度から250℃の加熱温度まで昇温した後、250℃の加熱温度で4時間保持してもよい。また、0.1~25MPaの圧力で加圧しながら、第1の積層体41または第2の積層体42を加熱してもよい。
金属箔切断加工品を半硬化物複合体シートに、貼り付け、加圧するとき、半硬化物複合体シートにおける金属箔切断加工品が配置されている領域と金属箔切断加工品が配置されていない領域との間の境界で厚さ方向の大きなズレが発生しないようにする方法として、板状部材を用いず、工程(C)における加圧条件を1.0~8.0MPaに設定する方法でもよい。このような観点から、工程(C)における加圧条件は、好ましくは2.0~7.0MPaであり、より好ましくは3.0~6.0MPaである。
以下、図2(d)及び図3を参照して、本発明の一実施形態の回路基板1を説明する。本発明の一実施形態の回路基板1は、多孔質セラミックスと、多孔質セラミックスの空隙を充填する熱硬化性組成物の硬化物とを含む硬化物複合体層2と、硬化物複合体層2の表面に設けられた金属パターン3とを含む。そして、金属パターン3の側面の凹み量(d1)を金属パターン3の厚さで割り算した値及び金属パターン3の側面の広がり量(d2)を金属パターン3の厚さで割り算した値が0.055以下である。これにより、金属パターンの占有面積が小さくなり回路基板の小型化が可能である。また、金属パターン3のより精密な制御が可能となる。このような観点から、金属パターン3の側面の凹み量(d1)を金属パターン3の厚さで割り算した値及び金属パターン3の側面の広がり量(d2)を金属パターン3の厚さで割り算した値は、好ましくは0.04以下、より好ましくは0.02以下、さらに好ましくは0.01以下である。上記値の範囲の下限値は、例えば0.00である。
なお、回路基板1の硬化物複合体層2及び金属パターン3は、上述の本発明の一実施形態の回路基板の製造方法の項目で説明したものと同様であるので、回路基板1の硬化物複合体層2及び金属パターン3の説明は省略する。
本発明の一実施形態の回路基板は、クラックが生じないか、又は非常に少ないため、優れた絶縁性を有する。具体的には実施例に記載の方法で測定した絶縁破壊電圧が3.5kV以上である。絶縁破壊電圧が3.5kV未満であると、パワーモジュールに使用するには、回路基板の耐電圧性が不十分となる場合がある。このような観点から、本発明の一実施形態の回路基板の絶縁破壊電圧は、好ましくは4.5kV以上である。なお、本発明の一実施形態の回路基板の絶縁破壊電圧の範囲の上限値は特に限定されないが、例えば、10kVである。
本発明の一実施形態の回路基板は良好な接着性を有する。具体的には実施例に記載の方法で測定した黒色部面積比率は、好ましくは90面積%以上である。特に板状部材を用いた本発明の一実施形態の回路基板の製造方法であれば、本発明の一実施形態の回路基板は、96面積%以上の高い接着性を実現できる。
本発明の一実施形態の回路基板1は、以下のように変形することができる。
図5(e)に示すように、本発明の一実施形態の回路基板1Aは、硬化物複合体層2の金属パターン3側の面とは反対側の面に設けられたメタルベース板4をさらに含んでもよい。これにより、回路基板1Aの強度及び放熱性が改善される。なお、回路基板1Aのメタルベース板4は、上述の本発明の一実施形態の回路基板の製造方法の変形例の項目で説明したものと同様であるので、メタルベース板4の説明は省略する。
(窒化ホウ素多孔体の作製)
容器に、アモルファス窒化ホウ素粉末(デンカ株式会社製、酸素含有量:1.5%、窒化ホウ素純度97.6%、平均粒径:6.0μm)が40.0質量%、六方晶窒化ホウ素粉末(デンカ株式会社製、酸素含有量:0.3%、窒化ホウ素純度:99.0%、平均粒径:30.0μm)が60.0質量%となるようにそれぞれ測り取り、焼結助剤(ホウ酸、炭酸カルシウム)を加えた後に有機バインダー、水を加え混合後、乾燥造粒し窒化物の混合粉末を調整した。
熱硬化性組成物の作製には、下記の原料を使用した。
エポキシ化合物:商品名「HP-4032D」、DIC株式会社製
シアネート化合物:商品名「TA-CN」、三菱ガス化学株式会社製
ベンゾオキサジン化合物:商品名「F-a型ベンゾオキサジン」、四国化成工業株式会社製
金属系硬化促進剤:ビス(2,4-ペンタンジオナト)亜鉛(II)、東京化成工業株式会社製
窒化ホウ素多孔体に、熱硬化性組成物を以下の方法で含浸させた。まず、真空加温含浸装置(商品名「G-555AT-R」、株式会社協真エンジニアリング製)に、窒化ホウ素多孔体と、容器に入れた上記熱硬化性組成物とを入れた。次に、100℃の脱気温度及び15Paの脱気圧力の条件下で、装置内を10分間脱気した。脱気後、同条件に維持したまま、窒化ホウ素多孔体を上記熱硬化性組成物に40分間浸漬し、熱硬化性組成物を窒化ホウ素多孔体に含浸させた。
金属箔切断加工品1:銅箔(白銅株式会社製、商品名「無酸素銅切板 JIS H3100 C1020P」、厚さ:3mm)を打ち抜き加工したもの(大きさ:15mm×15mm×3mm)(図1の金属箔切断加工品20参照)。
金属箔切断加工品2:銅箔(白銅株式会社製、商品名「無酸素銅切板 JIS H3100 C1020P」、厚さ:1mm)を打ち抜き加工したもの(大きさ:15mm×15mm×1mm)(図1の金属箔切断加工品20参照)。
板状部材1:銅箔(白銅株式会社製、商品名「無酸素銅切板 JIS H3100 C1020P」、厚さ:3mm)を50mm×50mmの大きさに切り出したものに穴開け加工により、15mm×15mmの穴を4つ開けたもの(図1の板状部材30a参照)。
板状部材2:銅箔(白銅株式会社製、商品名「無酸素銅切板 JIS H3100 C1020P」、厚さ:1mm)を50mm×50mmの大きさに切り出したものに穴開け加工により、15mm×15mmの穴を4つ開けたもの(図1の板状部材30a参照)。
板状部材3:テフロン(登録商標)シート(中興化成工業株式会社製、商品名「PTFEシート」、厚さ:0.05mm)を50mm×50mmの大きさに切り出したものに穴開け加工により、15mm×15mmの穴を4つ開けたもの(図1の板状部材30b参照)。
板状部材4:テフロン(登録商標)シート(中興化成工業株式会社製、商品名「PTFEシート」、厚さ:0.05mm)を50mm×50mmの大きさに切り出したものに穴開け加工により、15mm×15mmの穴を4つ開けたもの(図1の板状部材30b参照)。
アルミニウムベース板:アルミニウム板(日本軽金属株式会社製、商品名「高強度・高成形性板材(N532)5052材」、厚さ:5mm)を50mm×50mmの大きさに切り出したもの。
銅箔1:銅箔(白銅株式会社製、商品名「無酸素銅切板 JIS H3100 C1020P」、厚さ:3mm)を15mm×15mmの大きさに切り出したもの。
銅箔2:銅箔(白銅株式会社製、商品名「無酸素銅切板 JIS H3100 C1020P」、厚さ:1mm)を15mm×15mmの大きさに切り出したもの。
アルミニウムベース板の上に多孔質窒化ホウ素シートを配置し、多孔質窒化ホウ素シートの上に板状部材3を配置し、板状部材3の上に板状部材1を配置し、板状部材1及び板状部材3の開口部に嵌合させて、多孔質窒化ホウ素シートの上に4つの金属箔切断加工品1を配置して積層体を作製した。得られた積層体を180℃の加熱温度で加熱しながら、15MPaの圧力及び1時間の加圧時間で加圧した。その後、積層体を、1MPaの圧力で加圧しながら、150℃の加熱温度で6時間、180℃の加熱温度で4時間、200℃の加熱温度で4時間、及び250℃の加熱温度で4時間、加熱して回路基板1を得た(図5(e)の回路基板1A参照)。
アルミニウムベース板の上に多孔質窒化ホウ素シートを配置し、多孔質窒化ホウ素シートの上に板状部材4を配置し、板状部材4の上に板状部材2を配置し、板状部材2及び板状部材4の開口部に嵌合させて、多孔質窒化ホウ素シートの上に金属箔切断加工品1を配置して積層体を作製した。得られた積層体を180℃の加熱温度で加熱しながら、15MPaの圧力及び1時間の加圧時間で加圧した。その後、積層体を、1MPaの圧力で加圧しながら、150℃の加熱温度で6時間、180℃の加熱温度で4時間、200℃の加熱温度で4時間、及び250℃の加熱温度で4時間、加熱して回路基板2を得た(図5(e)の回路基板1A参照)。
板状部材1及び板状部材3を配置せず、接合のための加圧力を15MPaから5MPaに変更した以外は回路基板1の作製方法と同様の方法で回路基板3を作製した。
板状部材2及び板状部材4を配置せず、接合のための加圧力を15MPaから5MPaに変更した以外は回路基板2の作製方法と同様の方法で回路基板4を作製した。
板状部材1及び板状部材3を配置しない以外は回路基板1の作製方法と同様の方法で回路基板5を作製した。
板状部材2及び板状部材4を配置しない以外は回路基板2の作製方法と同様の方法で回路基板6を作製した。
アルミニウムベース板の上に多孔質窒化ホウ素シートを配置し、多孔質窒化ホウ素シートの上に銅箔1を配置して積層体を作製した。得られた積層体を180℃の加熱温度で加熱しながら、10MPaの圧力及び1時間の加圧時間で加圧した。その後、積層体を、1MPaの圧力で加圧しながら、150℃の加熱温度で6時間、180℃の加熱温度で4時間、200℃の加熱温度で4時間、及び250℃の加熱温度で4時間、加熱した。その後、ドライフィルムレジストを銅箔1の上に積層し、フォトマスクを使用して、ドライフィルムレジストにおいて金属パターンに対応する部分だけUV光を照射して、ドライフィルムレジストの金属パターンに対応する部分だけを硬化させた。そして、ドライフィルムレジストを現像した後、硫酸・過酸化水素エッチング液を使用して、積層体の銅箔におけるドライフィルムレジストが積層されていない部分を除去し、ドライフィルムレジストを剥離して、回路基板1と同様に、15mm×15mm×3mmの電極を表面に4つ備えた回路基板7を作製した。
銅箔1の代わりに銅箔2を使用した以外は、回路基板7の作製方法と同様の方法で、15mm×15mm×1mmの電極を表面に4つ備えた回路基板8を作製した。
作製した回路基板1~8について、以下の評価を行った。
(クラックの有無)
回路基板の多孔質窒化ホウ素シートの回路パターン周辺を目視で観察し、多孔質窒化ホウ素シートのクラックの有無を調べた。
上述のようにして得られた回路基板について絶縁破壊電圧の評価を行った。具体的には、油中にて銅箔1または銅箔2に測定電極が接するよう設置し、JIS C2110-1:2016にしたがって、耐圧試験器(菊水電子工業株式会社製、装置名:TOS-8700)を用い、絶縁破壊電圧を測定した。測定結果から、以下の基準で絶縁性を評価した。結果を表1に示す。
A:絶縁破壊電圧が4.5kV以上
B:絶縁破壊電圧が3.5kV以上4.5kV未満
C:絶縁破壊電圧が3.5kV未満
超音波探傷装置(商品名「FSP8VA FineSAT」、株式会社日立パワーソリューションズ製)にて回路基板の接着状態を確認した。超音波探傷像において剥離していない部分は接合部内の黒色部で示されることから、この黒色部面積にて接着性を評価した。
A:黒色部の面積比率が96面積%以上
B:黒色部の面積比率が90面積%以下96面積%未満
C:黒色部の面積比率が80面積%以上90面積%未満
回路基板を厚み方向に切り出し、回路基板の断面を観察することができるサンプルを作製した。切り出したサンプルを樹脂に埋め込んだ後、自動研磨機を使用して、サンプルの回路基板の断面に相当する部分を湿式研磨した。研磨後のサンプルを乾燥させた後、研磨面をオスミウムでコーティングした。そして、走査型電子顕微鏡(SEM)(商品名「JCM-6000Plus」、日本電子株式会社製)を使用して、金属パターンの側面を観察し、金属パターンの厚さ、金属パターンの側面の凹み量(d1)及び金属パターンの側面の広がり量(d2)を測定した。そして、金属パターンの側面の凹み量を金属パターンの厚さで割り算した値及び金属パターンの側面の広がり量を金属パターンの厚さで割り算した値を算出した。そして、通常、金属パターンには垂直な側面が要求されるので、金属パターンの側面の形状特性を以下の基準で評価した。
A:金属パターンの側面の凹み量を金属パターンの厚さで割り算した値及び金属パターンの側面の広がり量を金属パターンの厚さで割り算した値の両方の値が0.04以下である。
C:金属パターンの側面の凹み量を金属パターンの厚さで割り算した値及び金属パターンの側面の広がり量を金属パターンの厚さで割り算した値の両方の値が0.055以下であり、かつ、金属パターンの側面の凹み量を金属パターンの厚さで割り算した値及び金属パターンの側面の広がり量を金属パターンの厚さで割り算した値の少なくとも一方の値が0.04超である。
C:金属パターンの側面の凹み量を金属パターンの厚さで割り算した値及び金属パターンの側面の広がり量を金属パターンの厚さで割り算した値の少なくとも一方の値が0.055超である。
2 硬化物複合体層
3 金属パターン
4,50 メタルベース板
10 半硬化物複合体シート
20 金属箔切断加工品
30 板状部材
30a 第1の板状部材
30b 第2の板状部材
41,41A 第1の積層体
42,42A 第2の積層体
Claims (8)
- 多孔質セラミックスと、前記多孔質セラミックスの空隙を充填する熱硬化性組成物の半硬化物とを含む半硬化物複合体シートに、金属箔を切断加工して得られた金属箔切断加工品を積層して回路基板を製造する回路基板の製造方法であって、
前記金属箔切断加工品と嵌合する開口部を有する板状部材を前記半硬化物複合体シートの上に配置する工程と、
前記板状部材の開口部に嵌合させて、前記板状部材を配置した前記半硬化物複合体シートの上に前記金属箔切断加工品を配置する工程と、
前記板状部材及び前記金属箔切断加工品を配置した前記半硬化物複合体シートを加熱しながら加圧して第1の積層体を作製する工程と、
前記第1の積層体から前記板状部材を除去して第2の積層体を作製する工程とを含み、
前記金属箔切断加工品の厚さ及び前記板状部材の厚さの間の差の絶対値が0.25mm以下である回路基板の製造方法。 - 前記板状部材が、前記金属箔切断加工品と嵌合する開口部を有する第1の板状部材と、前記金属箔切断加工品と嵌合する開口部を有し、前記第1の板状部材及び前記半硬化物複合シートの接着を防ぐ剥離シートである第2の板状部材とからなる請求項1に記載の回路基板の製造方法。
- 前記板状部材の材料もしくは前記第1の板状部材の材料が前記金属箔切断加工品の材料と同じである請求項1または2に記載の回路基板の製造方法。
- メタルベース板の上に前記半硬化物複合体シートを配置する工程をさらに含み、
前記板状部材を配置する工程は、前記メタルベース板の上に配置した前記半硬化物複合体シートの上に板状部材を配置し、
前記金属箔切断加工品を配置する工程は、前記メタルベース板の上に配置した前記半硬化物複合体シートの上に前記金属箔切断加工品を配置する請求項1~3のいずれか1項に記載の回路基板の製造方法。 - 多孔質セラミックスと、前記多孔質セラミックスの空隙を充填する熱硬化性組成物の半硬化物とを含む半硬化物複合体シートに、金属箔を切断加工して得られた金属箔切断加工品を積層して回路基板を製造する回路基板の製造方法であって、
前記半硬化物複合体シートの上に前記金属箔切断加工品を配置する工程と、
前記金属箔切断加工品を配置した前記半硬化物複合体シートを加熱しながら、1.0~8.0MPaの圧力で加圧して積層体を作製する工程とを含む回路基板の製造方法。 - 前記第1の積層体、前記第2の積層体または前記積層体を加熱して硬化させる工程をさらに含む請求項1~5のいずれか1項に記載の回路基板の製造方法。
- 多孔質セラミックスと、前記多孔質セラミックスの空隙を充填する熱硬化性組成物の硬化物とを含む硬化物複合体層と、
前記硬化物複合体層の表面に設けられた金属パターンとを含み、
前記金属パターンの側面の凹み量を前記金属パターンの厚さで割り算した値及び前記金属パターンの側面の広がり量を前記金属パターンの厚さで割り算した値が0.055以下であり、
絶縁破壊電圧が3.5kV以上である回路基板。 - 前記硬化物複合体層の前記金属パターン側の面とは反対側の面に設けられたメタルベース板をさらに含む請求項7に記載の回路基板。
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