WO2022208900A1 - セラミック焼結体及び半導体装置用基板 - Google Patents

セラミック焼結体及び半導体装置用基板 Download PDF

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WO2022208900A1
WO2022208900A1 PCT/JP2021/015228 JP2021015228W WO2022208900A1 WO 2022208900 A1 WO2022208900 A1 WO 2022208900A1 JP 2021015228 W JP2021015228 W JP 2021015228W WO 2022208900 A1 WO2022208900 A1 WO 2022208900A1
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Prior art keywords
ceramic sintered
sintered body
copper plate
mass
semiconductor device
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PCT/JP2021/015228
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English (en)
French (fr)
Japanese (ja)
Inventor
孝友 緒方
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NGK Insulators Ltd
NGK Electronics Devices Inc
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NGK Insulators Ltd
NGK Electronics Devices Inc
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Priority to JP2023510165A priority Critical patent/JPWO2022208900A1/ja
Priority to DE112021006825.3T priority patent/DE112021006825T5/de
Priority to CN202180094868.0A priority patent/CN116917255A/zh
Publication of WO2022208900A1 publication Critical patent/WO2022208900A1/ja
Anticipated expiration legal-status Critical
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Definitions

  • the present invention relates to ceramic sintered bodies and substrates for semiconductor devices.
  • a DBOC substrate Direct Bonding of Copper Substrate having a copper plate on the surface of a ceramic sintered body is known as a substrate for semiconductor devices used in power transistor modules and the like (for example, Patent Document 1).
  • a copper plate is bonded to the surface of the ceramic sintered body. They have found that the bonding strength between the sintered body and the copper plate is lowered, and the copper plate may peel off.
  • the present invention has been made to solve the above-mentioned problems, and a ceramic sintered body and a semiconductor device substrate that can suppress peeling when a direct current voltage is applied when a copper plate is joined. intended to provide
  • a ceramic sintered body according to the present invention contains alumina and a glass component containing silica and manganese, has a bonding layer having a Mn concentration peak on at least one surface side, and The ratio of the peak value of Mn to the peak value of Si in the vertical direction is 1.0 to 7.0.
  • the glass component further contains magnesia, and the ratio of the peak value of Mn to the peak value of Mg in the depth direction of the bonding layer is 2.0 to 3.0. be able to.
  • the content of magnesia can be 0.1% by mass or more and 0.8% by mass or less.
  • a substrate for a semiconductor device is a substrate for a semiconductor device for mounting an electronic component, comprising any one of the ceramic sintered bodies described above and a copper plate bonded to the ceramic sintered body. , is equipped with
  • FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor device having a semiconductor device substrate according to the present invention
  • FIG. FIG. 4 is a diagram for explaining concentration distribution measurement of Mn or the like in the depth direction in Examples 1 and 4;
  • FIG. 4 is a diagram for explaining concentration distribution measurement of Mn or the like in the depth direction in Examples 1 and 4;
  • 4 is a diagram for explaining concentration distribution measurement of Mn or the like in the depth direction in Example 1.
  • FIG. FIG. 10 is a diagram for explaining concentration distribution measurement of Mn or the like in the depth direction in Example 4;
  • FIG. 1 is a cross-sectional view of a semiconductor device having a semiconductor device substrate according to this embodiment.
  • the semiconductor device includes, for example, automobiles, air conditioners, industrial robots, commercial elevators, household microwave ovens, IH electric rice cookers, power generation (wind power generation, solar power generation, fuel cells, etc.), electric railways, It is used as a power module in various electronic devices such as UPS (uninterruptible power supply).
  • UPS uninterruptible power supply
  • a semiconductor device 1 As shown in FIG. 1, a semiconductor device 1 according to this embodiment includes a semiconductor device substrate 2, a first bonding material 5, a second bonding material 5', a semiconductor chip 6, bonding wires 7, and a heat sink 8. there is
  • the semiconductor device substrate 2 is a so-called DBOC substrate (Direct Bonding of Copper Substrate), and includes a plate-shaped ceramic sintered body 3 which is an insulator and a first copper plate 4 bonded to one surface (upper surface) thereof. , and a second copper plate 4 ′ bonded to the other surface (lower surface). Details of the ceramic sintered body 3 will be described later.
  • DBOC substrate Direct Bonding of Copper Substrate
  • a transmission circuit is formed on the first copper plate 4 .
  • the second copper plate 4' is formed in a flat plate shape.
  • a semiconductor chip 6 is bonded to the upper surface of the semiconductor device substrate 2 , that is, to a portion of the upper surface of the first copper plate 4 with a first bonding material 5 interposed therebetween. Also, the semiconductor chip 6 and the first copper plate 4 are connected by bonding wires 7 .
  • a heat sink 8 is bonded to the bottom surface of the semiconductor device substrate 2, that is, the bottom surface of the second copper plate 4' via the second bonding material 5'.
  • the heat sink 8 is known and can be made of metal such as copper.
  • the ceramic sintered body 3 contains alumina (Al2O3), a glass component, and the remainder other than these. Glass components include silica (SiO2) and manganese (Mn). The contents of the constituent elements of this ceramic sintered body 3 will be described below.
  • the content of alumina is, for example, preferably 75% by mass or more and 90% by mass or less, more preferably 85% by mass or more and 90% by mass or less.
  • the content of silica is preferably 0.1% by mass or more and 2.5% by mass or less.
  • the content of silica is 0.1% by mass or more, as will be described later, the oxygen ion conductivity of the ceramic sintered body 3 is suppressed, and the impedance can be improved.
  • the silica content is high, the strength of the ceramic sintered body 3 may be lowered.
  • the silica content is preferably 2.5% by mass or less.
  • this glass component can additionally contain magnesia (MgO).
  • MgO magnesia
  • the content of magnesia is preferably 0.1% by mass or more and 0.8% by mass or less, more preferably 0.15% by mass or more and 0.3% by mass or less.
  • spinel crystals MgAl2O4 crystals
  • the wettability with the Cu--O eutectic liquid phase can be improved when the copper plates are joined. it is conceivable that. As a result, it is considered that this contributes to suppressing the formation of voids at the bonding interface.
  • the glass component may additionally contain calcia (CaO).
  • calcia calcia
  • the content of calcia is preferably 0.03% by mass or more and 0.35% by mass or less.
  • the ceramic sintered body according to the present invention can additionally contain zirconia (ZrO 2 ) and yttria (Y 2 O 3 ).
  • the content of zirconia is preferably 10% by mass or more and 25% by mass or less, more preferably 10% by mass or more and 15% by mass or less.
  • the strength of the ceramic sintered body 3 can be improved.
  • the linear thermal expansion coefficient of the ceramic sintered body 3 can be suppressed from becoming too small, and the difference in the linear thermal expansion coefficient between the ceramic sintered body 3 and the first and second copper plates 4, 4' can be reduced. .
  • the thermal stress generated at the bonding interface with the copper plate 4 can be reduced, which is considered to contribute to the suppression of cracks in the ceramic sintered body 3 at the bonding interface.
  • the zirconia content it is possible to suppress excessive reaction at the joint interface during copper plate joining, and to suppress the formation of voids at the joint interface. This is due to the difference in wettability between alumina and zirconia with the Cu--O eutectic liquid phase when bonding copper plates. Moreover, by setting the content of zirconia to 25% by mass or less, the impedance of the ceramic sintered body 3 can be improved without increasing the content of silica, as will be described later.
  • the content of yttria is preferably 0.8% by mass or more and 1.9% by mass or less.
  • the content is considered that the proportion of the monoclinic phase in the zirconia crystal phase can be suppressed from becoming excessive, while the proportion of the tetragonal phase can be increased.
  • the mechanical strength of the ceramic sintered body 3 can be improved, which is considered to contribute to the suppression of cracks in the ceramic sintered body 3 at the bonding interface.
  • the ratio of the yttria content to the zirconia content is preferably 4.5% by mass or more and 7.9% by mass or less.
  • the yttria content to 1.9% by mass or less, the proportion of cubic crystals in the zirconia crystal phase can be suppressed from becoming excessive, while the proportion of tetragonal crystals can be increased.
  • the mechanical strength of the ceramic sintered body 3 can be improved, which is considered to contribute to the suppression of cracks in the ceramic sintered body 3 at the bonding interface.
  • the content of the balance is preferably 0.5% by mass or less, more preferably 0.05% by mass or less in terms of oxide.
  • the contents of the constituent elements of the ceramic sintered body 3 are calculated in terms of oxides as described above, but the constituent elements of the ceramic sintered body 3 exist in the form of oxides. may be present in the form of oxides. For example, at least one of Y, Mg and Ca may not exist in the form of an oxide and may be dissolved in ZrO 2 .
  • the content of the constituent elements of the ceramic sintered body 3 in terms of oxides is calculated as follows. First, the constituent elements of the ceramic sintered body 3 are qualitatively analyzed using an X-ray fluorescence spectrometer (XRF) or an energy dispersive spectrometer (EDS) attached to a scanning electron microscope (SEM). Next, each element detected by this qualitative analysis is quantitatively analyzed using an ICP emission spectrometer. Next, the content of each element measured by this quantitative analysis is converted into an oxide.
  • XRF X-ray fluorescence spectrometer
  • EDS energy dispersive spectrometer
  • the elements contained in the balance may be elements that are intentionally added or elements that are unavoidably mixed.
  • Elements contained in the balance are not particularly limited, but examples thereof include Fe (iron), Ti (titanium), and Mn (manganese).
  • Method for producing ceramic sintered body and semiconductor device substrate Next, a method for manufacturing a ceramic sintered body and a semiconductor device substrate will be described. First, powder materials of the constituent elements described above are prepared. Next, the prepared powder material is pulverized and mixed by, for example, a ball mill.
  • an organic binder eg, polyvinyl butyral
  • a solvent xylene, toluene, etc.
  • a plasticizer dioctyl phthalate, etc.
  • the slurry material is molded into a desired shape by desired molding means (e.g., mold press, cold isostatic press, injection molding, doctor blade method, extrusion molding method, etc.) to form a ceramic compact. to make.
  • desired molding means e.g., mold press, cold isostatic press, injection molding, doctor blade method, extrusion molding method, etc.
  • the ceramic molded body is fired in an oxygen atmosphere or an air atmosphere (1560° C. to 1620° C., 0.7 hours to 1.0 hours) to obtain a ceramic sintered body precursor (hereinafter simply referred to as a precursor). Complete.
  • manganese is mixed with an organic solvent to form a suspension.
  • Manganese may be present as a metal or as an oxide in the step of being mixed with the organic solvent.
  • the content of manganese is, for example, 1-5 wt %.
  • the suspension is adhered to the surfaces to be joined with the first copper plate 4 and the second copper plate 4'.
  • a method for attaching the suspension to the precursor for example, the following method is adopted.
  • Drying time is, for example, 5 to 120 minutes.
  • the naturally-dried precursor is heated, for example, with a heating furnace.
  • the heating temperature is, for example, 500-600.degree.
  • the heating time is, for example, 10 to 60 minutes.
  • oxides of manganese may be present on the surface of the precursor after firing. can.
  • a laminated body is formed by arranging first and second copper plates 4 and 4' on the upper and lower surfaces of the ceramic sintered body 3. As shown in FIG. Here, the surface of each copper plate used is oxidized. Next, this laminate is heated at 1065° C. to 1083° C. under a nitrogen atmosphere for about 10 minutes. As a result, a Cu—O eutectic liquid phase is generated at the interfaces where the ceramic sintered body 3 and the first and second copper plates 4, 4′ are joined (hereinafter collectively referred to as “joint interfaces”). Each surface of the body 3 is wet. Subsequently, the laminate is cooled to solidify the Cu—O eutectic liquid phase, and the first and second copper plates 4 and 4 ′ are joined to the ceramic sintered body 3 .
  • the transmission circuit formed on the first copper plate 4 can be formed by, for example, a subtractive method or an additive method. Also, the thickness of each copper plate 4, 4' can be, for example, 0.1 to 2.0 mm.
  • a Cu—O—Al bond is formed in the bonding process by the generation and solidification of the Cu—O eutectic liquid phase. be.
  • a DC voltage is applied to them, near the interface between the first copper plate 4 and the ceramic sintered body 3, .
  • Cu--O--Al bonds are reduced. This reduces the bonding strength between the first copper plate 4 and the ceramic sintered body 3 . Oxygen ions generated by this reduction move through the ceramic sintered body 3 to the second copper plate 4 ′.
  • the second copper plate 4 ′ is oxidized by the oxygen ions, and the bonding strength between the second copper plate 4 ′ and the ceramic sintered body 3 is lowered.
  • the movement of oxygen ions when such a DC voltage is applied will be referred to as the first behavior.
  • the present inventor found that the movement of oxygen ions and electrons can be suppressed when silica and manganese are contained inside the ceramic sintered body 3 . That is, when silica and manganese are contained inside the ceramic sintered body 3, the silica and manganese trap oxygen ions and electrons, suppressing the propagation of oxygen ions and electrons. In this case, since the first behavior is suppressed, peeling of the first copper plate 4 and the second copper plate 4' due to the reduction of the Cu--O--Al bond does not occur even if the DC voltage is applied.
  • the inventor then measured the degree of propagation of such oxygen ions and electrons as the impedance of the ceramic sintered body 3 . That is, the lower the oxygen ion conductivity, the higher the impedance.
  • silica In order to increase the impedance, silica must be present inside the ceramic sintered body 3 as described above.
  • the glass component reduces the strength of the ceramic sintered body 3. Considering that cracks at the bonding interface progress from the surface of the ceramic sintered body 3 to the inside, it is desirable that the glass component near the surface of the ceramic sintered body 3 is small. Separation of the first copper plate 4 also occurs when cracks occur due to thermal stress generated at the bonding interface due to the difference in linear thermal expansion coefficient between the ceramic sintered body 3 and the first copper plate 4 .
  • the present inventors proposed that by providing a bonding layer having a Mn concentration peak at the bonding interface between the ceramic sintered body 3 and the first copper plate 4, the peeling of the first copper plate 4 when a DC voltage is applied. can be suppressed. Furthermore, when the ratio of the peak value of Mn to the peak value of Si in the depth direction of the bonding layer is 1.0 to 7.0, preferably 2.0 to 5.0, the peeling is further suppressed. It has been found that it can be suppressed, and the bonding strength between the ceramic sintered body 3 and the first copper plate 4 is stabilized.
  • the inventors also found that if the bonding layer contains Mg in addition to Mn, the same effects as those of Mn described above can be obtained. Furthermore, it was found that peeling can be further suppressed when the ratio of the peak value of Mg to the peak value of Mn in the depth direction of the bonding layer is 2.0 to 3.0.
  • polyvinyl butyral as an organic binder xylene as a solvent, and dioctyl phthalate as a plasticizer were added to the pulverized and mixed powder material to form a slurry material.
  • the slurry material was formed into a sheet by a doctor blade method to produce a ceramic compact.
  • the ceramic molded body was fired at 1570°C for 0.8 hours in an air atmosphere to prepare a ceramic sintered body precursor.
  • the size of this precursor was 0.32 mm thick, 39 mm long and 45 mm wide.
  • This precursor was used as the ceramic sintered bodies according to Comparative Examples 1 and 2. Table 1 shows the component ratio of the precursor.
  • the precursor was immersed in a suspension containing 3 wt% manganese, and the suspension was allowed to adhere to the surface.
  • the precursor to which the suspension was adhered was air-dried for 100 minutes in the air.
  • the air-dried precursor was heated in an oven at 500° C. for 20 minutes.
  • precursors having a manganese oxide layer formed on the surface that is, ceramic sintered bodies according to Examples 1 to 4 were obtained. Since the thickness of the manganese oxide layer is much thinner than the thickness of the precursor, the composition ratio of the ceramic sintered body is substantially the same as in Table 1.
  • FIG. 2 is a backscattered electron image near the bonding interface between the copper plate and the ceramic sintered body.
  • SEM scanning electron microscope
  • FIG. 2 a 20 ⁇ m ⁇ 20 ⁇ m area (square frame) including a copper plate and a ceramic sintered body was set. This area was divided into 256 ⁇ 256 small areas. One side of the small area is 0.078 ⁇ m, which is obtained by dividing 20 ⁇ m by 256. Next, the concentration of the element in each small area was calculated.
  • the element concentration (mass %) was averaged in 256 small areas in the horizontal direction (X direction) (this is called the X direction average element concentration).
  • the element concentration distribution was measured using a field emission electron probe microanalyzer.
  • FIG. 4 and 5 are graphs in which the horizontal axis is the vertical direction (Y direction) of FIG. 2, that is, the depth direction of the ceramic sintered body. did.
  • the origin of the horizontal axis of this graph is the corner of the square frame in FIG. 2 inside the copper plate.
  • 4 and 5 are graphs with the horizontal axis representing the depth direction of the ceramic sintered bodies (substrates) of Examples 1 and 4, respectively.
  • the X-direction average element concentration of is plotted on the vertical axis.
  • the ceramic sintered body (substrate) when the position at which the mass% concentration distribution curves of Cu and Al intersect is the center value, the range of ⁇ 1.0 ⁇ m from the center value is the above-mentioned bonding layer and Then, as shown in FIGS. 4 and 5, it can be seen that the concentration peak of Mn is located in the bonding layer. Although illustration is omitted, the present inventor has confirmed that concentration distribution curves having similar peaks are obtained in Examples 2 and 3 as well.
  • joint strength (kgf/mm) maximum lifting load (kgf)/length of short side of rectangle (mm).
  • Examples 1 to 4 the bonding strength hardly decreased even after the DC voltage was applied. Since the ceramic sintered body of Comparative Example 2 contains silica, the bonding strength is less likely to decrease after the DC voltage is applied, compared to the ceramic sintered body of Comparative Example 1 that does not contain silica. Examples 1 to 4 have a Mn concentration peak in the bonding layer, and in the depth direction of this bonding layer, the ratio of the Mn peak value to the Si peak value satisfies 1.0 to 7.0. As a result, the bonding strength is even more stable than in Comparative Example 2 even after the DC voltage is applied.
  • Substrate for semiconductor device 3 Ceramic sintered body 4, 4': Copper plate

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Publication number Priority date Publication date Assignee Title
WO2024133728A1 (de) * 2022-12-23 2024-06-27 Rogers Germany Gmbh Verfahren zur herstellung eines metall-keramik-substrats, keramikelement sowie metallschicht für ein solches verfahren und metall-keramik-substrat hergestellt mit einem solchen verfahren

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582276A (ja) * 1981-06-24 1983-01-07 株式会社日立製作所 金属−セラミツクス接合体及びその製造法
JP2003104772A (ja) * 2001-09-27 2003-04-09 Kyocera Corp アルミナ質焼結体及びその製造方法並びに配線基板
JP2005136049A (ja) * 2003-10-29 2005-05-26 Kyocera Corp 複合成形体、複合焼結体及びその製造方法、アルミナ質焼結体及び配線基板
JP2006327888A (ja) * 2005-05-27 2006-12-07 Nissan Motor Co Ltd セラミックスと金属のろう付け構造体
JP2011108999A (ja) * 2009-11-20 2011-06-02 Mitsubishi Materials Corp パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
WO2020085148A1 (ja) * 2018-10-22 2020-04-30 日本碍子株式会社 セラミック素地

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4717960U (enrdf_load_stackoverflow) 1971-04-07 1972-10-30
CN103189975B (zh) * 2010-11-01 2016-02-17 日铁住金电设备株式会社 电子零部件元件收纳用封装
JP5784153B2 (ja) * 2012-06-25 2015-09-24 京セラ株式会社 アルミナ質セラミックスおよびそれを用いたセラミック配線基板ならびにセラミックパッケージ
JP5835150B2 (ja) * 2012-08-09 2015-12-24 株式会社村田製作所 積層セラミックコンデンサ
WO2020115868A1 (ja) * 2018-12-06 2020-06-11 日本碍子株式会社 セラミックス焼結体及び半導体装置用基板

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582276A (ja) * 1981-06-24 1983-01-07 株式会社日立製作所 金属−セラミツクス接合体及びその製造法
JP2003104772A (ja) * 2001-09-27 2003-04-09 Kyocera Corp アルミナ質焼結体及びその製造方法並びに配線基板
JP2005136049A (ja) * 2003-10-29 2005-05-26 Kyocera Corp 複合成形体、複合焼結体及びその製造方法、アルミナ質焼結体及び配線基板
JP2006327888A (ja) * 2005-05-27 2006-12-07 Nissan Motor Co Ltd セラミックスと金属のろう付け構造体
JP2011108999A (ja) * 2009-11-20 2011-06-02 Mitsubishi Materials Corp パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
WO2020085148A1 (ja) * 2018-10-22 2020-04-30 日本碍子株式会社 セラミック素地

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024133728A1 (de) * 2022-12-23 2024-06-27 Rogers Germany Gmbh Verfahren zur herstellung eines metall-keramik-substrats, keramikelement sowie metallschicht für ein solches verfahren und metall-keramik-substrat hergestellt mit einem solchen verfahren

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