WO2022205932A1 - Textured silicon nitride ceramic substrate, and cutting method therefor and application thereof - Google Patents

Textured silicon nitride ceramic substrate, and cutting method therefor and application thereof Download PDF

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WO2022205932A1
WO2022205932A1 PCT/CN2021/130594 CN2021130594W WO2022205932A1 WO 2022205932 A1 WO2022205932 A1 WO 2022205932A1 CN 2021130594 W CN2021130594 W CN 2021130594W WO 2022205932 A1 WO2022205932 A1 WO 2022205932A1
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silicon nitride
nitride ceramic
diamond wire
textured silicon
ceramic substrate
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PCT/CN2021/130594
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French (fr)
Chinese (zh)
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伍尚华
李林
伍海东
张凤林
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广东工业大学
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/02—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing
    • B28D1/06—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing with reciprocating saw-blades
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates

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  • the invention relates to the technical field of preparation of silicon nitride ceramic substrates, in particular to a textured silicon nitride ceramic substrate and a cutting method and application thereof.
  • the ceramic substrate prepared by the traditional tape casting method can only reach 60W ⁇ m -1 k -1 .
  • textured silicon nitride ceramics Compared with untextured silicon nitride ceramics, textured silicon nitride ceramics have better properties, including strength, hardness, and thermal conductivity.
  • the technical problem to be solved by the embodiments of the present invention is how to cut a silicon nitride ceramic substrate with high thermal conductivity.
  • an embodiment of the present invention proposes a method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw.
  • the method is applied to a textured silicon nitride ceramic, and the method The method includes: cutting the textured silicon nitride ceramic into a textured silicon nitride ceramic substrate along a direction perpendicular to the texturing direction of the textured silicon nitride ceramic by an electroplated diamond wire saw.
  • a further technical solution is that the textured silicon nitride ceramic is fixed on the stage of the electroplated diamond wire saw, and the textured direction of the textured silicon nitride ceramic is the same as that of the electroplated diamond wire.
  • the diamond wire of the saw is vertical.
  • a further technical solution thereof is that the workpiece feed speed of the electroplated diamond wire saw is set to 0.08mm/min-0.12mm/min.
  • the wire speed of the electroplated diamond wire saw is set to 30-35m/s.
  • a further technical solution thereof is that the tension force of the diamond wire of the electroplated diamond wire saw is set to 27N-30N.
  • a further technical solution thereof is that the swing angle of the diamond wire of the electroplated diamond wire saw is set to 7-9°.
  • the mesh number of diamonds of the diamond wire of the electroplated diamond wire saw is 300-400 meshes.
  • an embodiment of the present invention provides a textured silicon nitride ceramic substrate, wherein the textured silicon nitride ceramic substrate is cut by the electroplated diamond wire saw based on the first aspect. Method for preparing the substrate.
  • the thermal conductivity of the textured silicon nitride ceramic substrate exceeds 100m -1 . k ⁇ 1 , the surface roughness of the textured silicon nitride ceramic substrate is less than 0.1 ⁇ m.
  • an embodiment of the present invention provides an application of the textured silicon nitride ceramic substrate as described in the second aspect in an electronic device substrate.
  • the textured silicon nitride ceramic is cut into a textured silicon nitride ceramic by an electroplated diamond wire saw along a direction perpendicular to the texturing direction of the textured silicon nitride ceramic
  • the thickness direction of the obtained textured silicon nitride ceramic substrate is consistent with its texture direction, so it has better thermal conductivity, and its thermal conductivity exceeds 100m -1 . k ⁇ 1 , meanwhile, the surface roughness of the textured silicon nitride ceramic substrate is less than 0.1 ⁇ m, so that the requirements for high thermal conductivity of electronic device substrates can be met.
  • FIG. 1 is a schematic diagram of a cutting direction of a method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw according to an embodiment of the present invention.
  • the silicon nitride ceramics in the embodiments of the present invention refer to silicon nitride ceramics prepared by texturing, the crystal grains are uniformly and neatly arranged along the texturing direction, and the molecular formula is Si 3 N 4 .
  • an embodiment of the present invention provides a method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw, and the method is applied to a textured silicon nitride ceramic to cut the textured silicon nitride Ceramic substrate.
  • the method includes cutting the textured silicon nitride ceramic into a textured silicon nitride ceramic substrate along a direction perpendicular to the texturing direction of the textured silicon nitride ceramic by an electroplated diamond wire saw. Among them, the cutting direction is the direction shown by the arrow in FIG. 1 .
  • the textured silicon nitride ceramic was fixed on the stage of the electroplated diamond wire saw, and at the same time.
  • the textured direction of the textured silicon nitride ceramic is made perpendicular to the diamond wire of the electroplated diamond wire saw.
  • the electroplated diamond wire saw was started to cut out the textured silicon nitride ceramic substrate.
  • the electroplated diamond wire saw may be specifically an oscillating electroplated diamond wire saw, and the diamond wire of the electroplated diamond wire saw has a diamond mesh number of 300-400 meshes. If the diamond particle size is too large, it is easy to fall off, and if it is too small, the cutting force will be insufficient.
  • the cutting parameters are set as follows: the workpiece feed speed of the electroplated diamond wire saw is set to 0.08mm/min-0.12mm/min. Too high feed rate will result in poor surface finish, too low feed rate will result in low efficiency.
  • the wire speed of the electroplated diamond wire saw is set at 30-35m/s. Too high a wire speed will result in excessive wear, and too low a wire speed will result in insufficient cutting force.
  • the tension force of the diamond wire of the electroplated diamond wire saw is set to 27N-30N.
  • the swing angle of the diamond wire of the electroplated diamond wire saw is set to 7-9°.
  • the thermal conductivity is higher along the direction parallel to and perpendicular to the textured direction. Therefore, in the present invention, the electroplated diamond wire saw along the direction with the textured nitrogen.
  • the textured silicon nitride ceramic is cut in a direction perpendicular to the textured direction of the silicon nitride ceramic into a textured silicon nitride ceramic substrate, and the thickness direction of the obtained textured silicon nitride ceramic substrate is related to its texture.
  • the direction of the change is the same, so that it has better thermal conductivity, and its thermal conductivity exceeds 100m -1 . k ⁇ 1 , while the surface roughness of the textured silicon nitride ceramic substrate is less than 0.1 ⁇ m.
  • the embodiment of the present invention also provides a textured silicon nitride ceramic substrate obtained by the vegetation of the above-mentioned embodiments, and the thermal conductivity of the textured silicon nitride ceramic substrate exceeds 100 m -1 . k -1 , the surface roughness is less than 0.1 ⁇ m.
  • Embodiments of the present invention also provide an application of the above textured silicon nitride ceramic substrate in an electronic device substrate.
  • a textured silicon nitride ceramic was used, its texture direction was adjusted to be perpendicular to the diamond wire and it was clamped on the stage of the electroplated diamond wire saw. Adjust the workpiece feed speed of the electroplated diamond wire saw to 0.08mm/min through the console, and set the wire speed to 30m/s. During the cutting process, it is necessary to keep the stage and the instrument flat, without other vibration effects, and set the tension force of the diamond wire of the electroplated diamond wire saw to 27N by means of pneumatic adjustment. During the cutting process, the diamond wire has a certain swing angle, and the swing angle is 7°. In addition, the number of diamonds in the diamond wire is 300 meshes.
  • Example 2 By the method of Example 1, a total of 100 textured silicon nitride ceramic substrates were prepared.
  • the thermal conductivity (average) of the prepared silicon nitride ceramic substrates was 102W ⁇ m -1 ⁇ k -1 , and the surface roughness was (Average) 0.09um, the yield rate is 96%.
  • a textured silicon nitride ceramic was used, whose textured direction was adjusted to be perpendicular to the diamond wire and mounted on the stage of an electroplated diamond wire saw. Adjust the workpiece feed speed of the electroplated diamond wire saw to 0.10mm/min through the console, and set the wire speed to 30m/s. During the cutting process, it is necessary to keep the stage and the instrument flat, without other vibration effects, and set the tension force of the diamond wire of the electroplated diamond wire saw to 27N by means of pneumatic adjustment. During the cutting process, the diamond wire has a certain swing angle, and the swing angle is 8°. In addition, the number of diamonds in the diamond wire is 350 meshes.
  • Example 2 By the method of Example 2, a total of 100 textured silicon nitride ceramic substrates were prepared.
  • the thermal conductivity (average) of the prepared silicon nitride ceramic substrates was 102W ⁇ m -1 ⁇ k -1 , and the surface roughness was 102W ⁇ m -1 ⁇ k -1 . (Average) 0.08um, the yield rate is 95%.
  • a textured silicon nitride ceramic was used, its texture direction was adjusted to be perpendicular to the diamond wire and it was clamped on the stage of the electroplated diamond wire saw. Adjust the workpiece feed speed of the electroplated diamond wire saw to 0.12mm/min through the console, and set the wire speed to 35m/s. During the cutting process, it is necessary to keep the stage and the instrument flat, without the influence of other vibrations, and set the tension force of the diamond wire of the electroplated diamond wire saw to 30N by means of pneumatic adjustment. During the cutting process, the diamond wire has a certain swing angle, and the swing angle is 9°. In addition, the number of diamonds in the diamond wire is 400 meshes.
  • Example 3 By the method of Example 3, a total of 100 textured silicon nitride ceramic substrates were prepared.
  • the thermal conductivity (average) of the prepared silicon nitride ceramic substrates was 102W ⁇ m -1 ⁇ k -1 , and the surface roughness was (Average) 0.08um, the yield rate is 95%.
  • Example 2 Compared with Example 1, the difference is that non-textured silicon nitride ceramics are used for diamond wire saw cutting.
  • the thermal conductivity of the cut silicon nitride ceramic substrate is only 50 ⁇ m -1 ⁇ k -1 , the surface roughness is 0.1um, and the yield rate is 94%.
  • Example 1 Compared with Example 1, the difference is that the cutting direction is parallel to the texturing direction
  • the thermal conductivity of the cut silicon nitride ceramic substrate is only 60 ⁇ m -1 ⁇ k -1 , the surface roughness is 0.12um, and the yield rate is 95%.
  • Example 3 Compared with Example 3, the difference is that the feed speed is 0.15mm/min, the wire speed is 20m/s, the tensioning force is 20N, the diamond particle size is 200 mesh, and the swing angle is 5°
  • the thermal conductivity of the cut silicon nitride ceramic substrate is only 60 ⁇ m -1 ⁇ k -1 , the surface roughness is 0.2um, and the yield rate is 60%.

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Abstract

A method for cutting a textured silicon nitride ceramic substrate on the basis of an electroplated diamond wire saw. The method comprises: cutting, by means of an electroplated diamond wire saw in a direction perpendicular to a texturing direction of the textured silicon nitride ceramic, a textured silicon nitride ceramic into a textured silicon nitride ceramic substrate. Also provided are the textured silicon nitride ceramic substrate prepared by using the method and an application of the textured silicon nitride ceramic substrate in an electronic device substrate. The thickness direction of the textured silicon nitride ceramic substrate obtained by using the method is consistent with the texturing direction of the textured silicon nitride ceramic substrate, so that better thermal conduction performance and surface roughness are achieved, and the requirement for high thermal conductivity of an electronic device substrate can be satisfied.

Description

一种织构化氮化硅陶瓷基板及其切割方法和应用A textured silicon nitride ceramic substrate and its cutting method and application 技术领域technical field
本发明涉及氮化硅陶瓷基板制备技术领域，尤其涉及一种织构化氮化硅陶瓷基板及其切割方法和应用。The invention relates to the technical field of preparation of silicon nitride ceramic substrates, in particular to a textured silicon nitride ceramic substrate and a cutting method and application thereof.
背景技术Background technique
目前，人们对陶瓷基板的材料的导热性能的要求越来越高，传统的流延成型方法制备的陶瓷基板只能达到60W·m -1k -1。 At present, people have higher and higher requirements on the thermal conductivity of the material of the ceramic substrate, and the ceramic substrate prepared by the traditional tape casting method can only reach 60W·m -1 k -1 .
织构化氮化硅陶瓷相较于无织构化氮化硅陶瓷，拥有着更优秀的性能，包括强度、硬度、热导率方面。Compared with untextured silicon nitride ceramics, textured silicon nitride ceramics have better properties, including strength, hardness, and thermal conductivity.
传统的氮化硅陶瓷的导热率较低，限制了其作为电子元器件基板的应用。因此，如何切割得到高热导率的氮化硅陶瓷基板，成为本领域亟需解决的技术问题。The low thermal conductivity of traditional silicon nitride ceramics limits its application as a substrate for electronic components. Therefore, how to obtain a silicon nitride ceramic substrate with high thermal conductivity by cutting has become an urgent technical problem to be solved in the art.
发明内容SUMMARY OF THE INVENTION
本发明实施例所要解决的技术问题是如何切割高热导率的氮化硅陶瓷基板。The technical problem to be solved by the embodiments of the present invention is how to cut a silicon nitride ceramic substrate with high thermal conductivity.
为了解决上述问题，第一方面，本发明实施例提出一种基于电镀金刚石线锯切割织构化氮化硅陶瓷基板的方法，所述方法应用于织构化氮化硅陶瓷中，所述方法包括：通过电镀金刚石线锯沿着与所述织构化氮化硅陶瓷的织构化方向垂直的方向将所述织构化氮化硅陶瓷切割为织构化氮化硅陶瓷基板。In order to solve the above problems, in the first aspect, an embodiment of the present invention proposes a method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw. The method is applied to a textured silicon nitride ceramic, and the method The method includes: cutting the textured silicon nitride ceramic into a textured silicon nitride ceramic substrate along a direction perpendicular to the texturing direction of the textured silicon nitride ceramic by an electroplated diamond wire saw.
其进一步的技术方案为，所述织构化氮化硅陶瓷固定于所述电镀金刚石线锯的载物台上，所述织构化氮化硅陶瓷的织构化方向与所述电镀金刚石线锯的金刚石线垂直。A further technical solution is that the textured silicon nitride ceramic is fixed on the stage of the electroplated diamond wire saw, and the textured direction of the textured silicon nitride ceramic is the same as that of the electroplated diamond wire. The diamond wire of the saw is vertical.
其进一步的技术方案为，所述电镀金刚石线锯的工件进给速度设定为0.08mm/min-0.12mm/min。A further technical solution thereof is that the workpiece feed speed of the electroplated diamond wire saw is set to 0.08mm/min-0.12mm/min.
其进一步的技术方案为，所述电镀金刚石线锯的锯丝线速度设定为 30-35m/s。Its further technical scheme is that the wire speed of the electroplated diamond wire saw is set to 30-35m/s.
其进一步的技术方案为，所述电镀金刚石线锯的金刚石线的张紧力设定为27N-30N。A further technical solution thereof is that the tension force of the diamond wire of the electroplated diamond wire saw is set to 27N-30N.
其进一步的技术方案为，所述电镀金刚石线锯的金刚石线的摆动角度设定为7-9°。A further technical solution thereof is that the swing angle of the diamond wire of the electroplated diamond wire saw is set to 7-9°.
其进一步的技术方案为，所述电镀金刚石线锯的金刚石线的金刚石的目数为300-400目。Its further technical scheme is that the mesh number of diamonds of the diamond wire of the electroplated diamond wire saw is 300-400 meshes.
第二方面，本发明实施例提出一种织构化氮化硅陶瓷基板，所述织构化氮化硅陶瓷基板由第一方面所述的基于电镀金刚石线锯切割织构化氮化硅陶瓷基板的方法制备。In a second aspect, an embodiment of the present invention provides a textured silicon nitride ceramic substrate, wherein the textured silicon nitride ceramic substrate is cut by the electroplated diamond wire saw based on the first aspect. Method for preparing the substrate.
其进一步的技术方案为，所述织构化氮化硅陶瓷基板的热导率超过100m -1﹒k -1，所述织构化氮化硅陶瓷基板的表面粗糙度小于0.1μm。 Its further technical solution is that the thermal conductivity of the textured silicon nitride ceramic substrate exceeds 100m -1 ﹒ k −1 , the surface roughness of the textured silicon nitride ceramic substrate is less than 0.1 μm.
第三方面，本发明实施例提供如第二方面所述的织构化氮化硅陶瓷基板在电子器件基板中的应用。In a third aspect, an embodiment of the present invention provides an application of the textured silicon nitride ceramic substrate as described in the second aspect in an electronic device substrate.
与现有技术相比，本发明实施例所能达到的技术效果包括：Compared with the prior art, the technical effects that the embodiments of the present invention can achieve include:
本发明实施例中，通过电镀金刚石线锯沿着与所述织构化氮化硅陶瓷的织构化方向垂直的方向将所述织构化氮化硅陶瓷切割为织构化氮化硅陶瓷基板，由此得到的织构化氮化硅陶瓷基板的厚度方向与其织构化方向一致，从而具备了更好的导热性能，其热导率超过100m -1﹒k -1，同时所述织构化氮化硅陶瓷基板的表面粗糙度小于0.1μm，从而能够满足电子器件基板对高导热性的要求。 In the embodiment of the present invention, the textured silicon nitride ceramic is cut into a textured silicon nitride ceramic by an electroplated diamond wire saw along a direction perpendicular to the texturing direction of the textured silicon nitride ceramic The thickness direction of the obtained textured silicon nitride ceramic substrate is consistent with its texture direction, so it has better thermal conductivity, and its thermal conductivity exceeds 100m -1 ﹒ k −1 , meanwhile, the surface roughness of the textured silicon nitride ceramic substrate is less than 0.1 μm, so that the requirements for high thermal conductivity of electronic device substrates can be met.
附图说明Description of drawings
为了更清楚地说明本发明实施例技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to explain the technical solutions of the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings used in the description of the embodiments. Obviously, the drawings in the following description are some embodiments of the present invention, which are of great significance to the art For those of ordinary skill, other drawings can also be obtained from these drawings without any creative effort.
图1本发明实施例提出的一种基于电镀金刚石线锯切割织构化氮化硅陶瓷基板的方法的切割方向的示意图。1 is a schematic diagram of a cutting direction of a method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw according to an embodiment of the present invention.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图，对实施例中的技术方案进行清楚、完整地描述，附图中类似的组件标号代表类似的组件。显然，以下将描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions in the embodiments will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Similar component numbers in the accompanying drawings represent similar components. Obviously, the embodiments to be described below are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
应当理解，当在本说明书和所附权利要求书中使用时，术语“包括”和“包含”指示所描述特征、整体、步骤、操作、元素和/或组件的存在，但并不排除一个或多个其它特征、整体、步骤、操作、元素、组件和/或其集合的存在或添加。It is to be understood that, when used in this specification and the appended claims, the terms "comprising" and "comprising" indicate the presence of the described features, integers, steps, operations, elements and/or components, but do not exclude one or The presence or addition of a number of other features, integers, steps, operations, elements, components, and/or sets thereof.
还应当理解，在此本发明实施例说明书中所使用的术语仅仅是出于描述特定实施例的目的而并不意在限制本发明实施例。如在本发明实施例说明书和所附权利要求书中所使用的那样，除非上下文清楚地指明其它情况，否则单数形式的“一”、“一个”及“该”意在包括复数形式。It should also be understood that the terms used in the description of the embodiments of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the embodiments of the present invention. As used in the description of the embodiments of the invention and the appended claims, the singular forms "a", "an" and "the" are intended to include the plural forms unless the context clearly dictates otherwise.
本发明实施例中的氮化硅陶瓷指的是通过织构化制备的氮化硅陶瓷，晶粒沿着织构化方向均匀整齐排布，分子式为Si 3N 4。 The silicon nitride ceramics in the embodiments of the present invention refer to silicon nitride ceramics prepared by texturing, the crystal grains are uniformly and neatly arranged along the texturing direction, and the molecular formula is Si 3 N 4 .
参见图1，本发明实施例提出一种基于电镀金刚石线锯切割织构化氮化硅陶瓷基板的方法，所述方法应用于织构化氮化硅陶瓷中，以切割织构化氮化硅陶瓷基板。Referring to FIG. 1 , an embodiment of the present invention provides a method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw, and the method is applied to a textured silicon nitride ceramic to cut the textured silicon nitride Ceramic substrate.
该方法包括：通过电镀金刚石线锯沿着与所述织构化氮化硅陶瓷的织构化方向垂直的方向将所述织构化氮化硅陶瓷切割为织构化氮化硅陶瓷基板。其中，切割方向如图1中箭头所示方向。The method includes cutting the textured silicon nitride ceramic into a textured silicon nitride ceramic substrate along a direction perpendicular to the texturing direction of the textured silicon nitride ceramic by an electroplated diamond wire saw. Among them, the cutting direction is the direction shown by the arrow in FIG. 1 .
具体地，将织构化氮化硅陶瓷固定于所述电镀金刚石线锯的载物台上，同时。使得所述织构化氮化硅陶瓷的织构化方向与所述电镀金刚石线锯的金刚石线垂直。之后，启动电镀金刚石线锯切割出织构化氮化硅陶瓷基板。Specifically, the textured silicon nitride ceramic was fixed on the stage of the electroplated diamond wire saw, and at the same time. The textured direction of the textured silicon nitride ceramic is made perpendicular to the diamond wire of the electroplated diamond wire saw. After that, the electroplated diamond wire saw was started to cut out the textured silicon nitride ceramic substrate.
进一步地，电镀金刚石线锯可具体为摆动式电镀金刚石线锯，所述电镀金刚石线锯的金刚石线的金刚石的目数为300-400目。金刚石粒径过大容易掉落，过小切割力会不足。Further, the electroplated diamond wire saw may be specifically an oscillating electroplated diamond wire saw, and the diamond wire of the electroplated diamond wire saw has a diamond mesh number of 300-400 meshes. If the diamond particle size is too large, it is easy to fall off, and if it is too small, the cutting force will be insufficient.
同时切割参数设定如下：所述电镀金刚石线锯的工件进给速度设定为0.08mm/min-0.12mm/min。过高的进给速度会造成表面加工质量差，过低的进给 速度会导致效率低。At the same time, the cutting parameters are set as follows: the workpiece feed speed of the electroplated diamond wire saw is set to 0.08mm/min-0.12mm/min. Too high feed rate will result in poor surface finish, too low feed rate will result in low efficiency.
所述电镀金刚石线锯的锯丝线速度设定为30-35m/s。锯丝线速度过高会导致磨损过大，过低会导致切割力不足。The wire speed of the electroplated diamond wire saw is set at 30-35m/s. Too high a wire speed will result in excessive wear, and too low a wire speed will result in insufficient cutting force.
所述电镀金刚石线锯的金刚石线的张紧力设定为27N-30N。所述电镀金刚石线锯的金刚石线的摆动角度设定为7-9°。The tension force of the diamond wire of the electroplated diamond wire saw is set to 27N-30N. The swing angle of the diamond wire of the electroplated diamond wire saw is set to 7-9°.
发明人研究发现，对于织构化氮化硅陶瓷，沿平行于垂直于织构化方向，热导率更高，因此，本发明中，通过电镀金刚石线锯沿着与所述织构化氮化硅陶瓷的织构化方向垂直的方向将所述织构化氮化硅陶瓷切割为织构化氮化硅陶瓷基板，由此得到的织构化氮化硅陶瓷基板的厚度方向与其织构化方向一致，从而具备了更好的导热性能，其热导率超过100m -1﹒k -1，同时所述织构化氮化硅陶瓷基板的表面粗糙度小于0.1μm。 The inventor's research found that for textured silicon nitride ceramics, the thermal conductivity is higher along the direction parallel to and perpendicular to the textured direction. Therefore, in the present invention, the electroplated diamond wire saw along the direction with the textured nitrogen. The textured silicon nitride ceramic is cut in a direction perpendicular to the textured direction of the silicon nitride ceramic into a textured silicon nitride ceramic substrate, and the thickness direction of the obtained textured silicon nitride ceramic substrate is related to its texture. The direction of the change is the same, so that it has better thermal conductivity, and its thermal conductivity exceeds 100m -1 ﹒ k −1 , while the surface roughness of the textured silicon nitride ceramic substrate is less than 0.1 μm.
本发明实施例还提供通过上述实施例植被得到的织构化氮化硅陶瓷基板，该织构化氮化硅陶瓷基板的热导率超过100m -1﹒k -1，表面粗糙度小于0.1μm。 The embodiment of the present invention also provides a textured silicon nitride ceramic substrate obtained by the vegetation of the above-mentioned embodiments, and the thermal conductivity of the textured silicon nitride ceramic substrate exceeds 100 m -1 ﹒ k -1 , the surface roughness is less than 0.1 μm.
本发明实施例还提供上述织构化氮化硅陶瓷基板在电子器件基板中的应用。Embodiments of the present invention also provide an application of the above textured silicon nitride ceramic substrate in an electronic device substrate.
为了能够更好的阐述本发明的技术方案，提供具体实施例如下：In order to better illustrate the technical solutions of the present invention, specific embodiments are provided as follows:
实施例1Example 1
采用织构化氮化硅陶瓷，将其织构化方向调节到与金刚石线垂直并将其装夹在电镀金刚石线锯的载物台上。通过控制台调节电镀金刚石线锯的工件进给速度为0.08mm/min，设定锯丝线速度为30m/s。切割过程中，需保持载物台和仪器平整，无其他振动影响，通过气动调节的方式将电镀金刚石线锯的金刚石线的张紧力设置为27N。切割过程中，金刚石线具有一定摆动角度，且摆动角度为7°。并且，金刚石线的金刚石的目数为300目。A textured silicon nitride ceramic was used, its texture direction was adjusted to be perpendicular to the diamond wire and it was clamped on the stage of the electroplated diamond wire saw. Adjust the workpiece feed speed of the electroplated diamond wire saw to 0.08mm/min through the console, and set the wire speed to 30m/s. During the cutting process, it is necessary to keep the stage and the instrument flat, without other vibration effects, and set the tension force of the diamond wire of the electroplated diamond wire saw to 27N by means of pneumatic adjustment. During the cutting process, the diamond wire has a certain swing angle, and the swing angle is 7°. In addition, the number of diamonds in the diamond wire is 300 meshes.
通过实施例1的方法，总共制备了100块织构化氮化硅陶瓷基板，所制备的氮化硅陶瓷基板热导率(平均值)为102W·m -1·k -1，表面粗糙度(平均值)0.09um，良品率为96％。 By the method of Example 1, a total of 100 textured silicon nitride ceramic substrates were prepared. The thermal conductivity (average) of the prepared silicon nitride ceramic substrates was 102W·m -1 ·k -1 , and the surface roughness was (Average) 0.09um, the yield rate is 96%.
实施例2Example 2
采用织构化氮化硅陶瓷，将其织构化方向调节到与金刚石线垂直并将其装 夹在电镀金刚石线锯的载物台上。通过控制台调节电镀金刚石线锯的工件进给速度为0.10mm/min，设定锯丝线速度为30m/s。切割过程中，需保持载物台和仪器平整，无其他振动影响，通过气动调节的方式将电镀金刚石线锯的金刚石线的张紧力设置为27N。切割过程中，金刚石线具有一定摆动角度，且摆动角度为8°。并且，金刚石线的金刚石的目数为350目。A textured silicon nitride ceramic was used, whose textured direction was adjusted to be perpendicular to the diamond wire and mounted on the stage of an electroplated diamond wire saw. Adjust the workpiece feed speed of the electroplated diamond wire saw to 0.10mm/min through the console, and set the wire speed to 30m/s. During the cutting process, it is necessary to keep the stage and the instrument flat, without other vibration effects, and set the tension force of the diamond wire of the electroplated diamond wire saw to 27N by means of pneumatic adjustment. During the cutting process, the diamond wire has a certain swing angle, and the swing angle is 8°. In addition, the number of diamonds in the diamond wire is 350 meshes.
通过实施例2的方法，总共制备了100块织构化氮化硅陶瓷基板，所制备的氮化硅陶瓷基板热导率(平均值)为102W·m -1·k -1，表面粗糙度(平均值)0.08um，良品率为95％。 By the method of Example 2, a total of 100 textured silicon nitride ceramic substrates were prepared. The thermal conductivity (average) of the prepared silicon nitride ceramic substrates was 102W·m -1 ·k -1 , and the surface roughness was 102W·m -1 ·k -1 . (Average) 0.08um, the yield rate is 95%.
实施例3Example 3
采用织构化氮化硅陶瓷，将其织构化方向调节到与金刚石线垂直并将其装夹在电镀金刚石线锯的载物台上。通过控制台调节电镀金刚石线锯的工件进给速度为0.12mm/min，设定锯丝线速度为35m/s。切割过程中，需保持载物台和仪器平整，无其他振动影响，通过气动调节的方式将电镀金刚石线锯的金刚石线的张紧力设置为30N。切割过程中，金刚石线具有一定摆动角度，且摆动角度为9°。并且，金刚石线的金刚石的目数为400目。A textured silicon nitride ceramic was used, its texture direction was adjusted to be perpendicular to the diamond wire and it was clamped on the stage of the electroplated diamond wire saw. Adjust the workpiece feed speed of the electroplated diamond wire saw to 0.12mm/min through the console, and set the wire speed to 35m/s. During the cutting process, it is necessary to keep the stage and the instrument flat, without the influence of other vibrations, and set the tension force of the diamond wire of the electroplated diamond wire saw to 30N by means of pneumatic adjustment. During the cutting process, the diamond wire has a certain swing angle, and the swing angle is 9°. In addition, the number of diamonds in the diamond wire is 400 meshes.
通过实施例3的方法，总共制备了100块织构化氮化硅陶瓷基板，所制备的氮化硅陶瓷基板热导率(平均值)为102W·m -1·k -1，表面粗糙度(平均值)0.08um，良品率为95％。 By the method of Example 3, a total of 100 textured silicon nitride ceramic substrates were prepared. The thermal conductivity (average) of the prepared silicon nitride ceramic substrates was 102W·m -1 ·k -1 , and the surface roughness was (Average) 0.08um, the yield rate is 95%.
对比例1Comparative Example 1
与实施例1相比，不同的是采用无织构化氮化硅陶瓷进行金刚石线锯切割。Compared with Example 1, the difference is that non-textured silicon nitride ceramics are used for diamond wire saw cutting.
切割后的氮化硅陶瓷基板热导率仅为50·m -1·k -1，表面粗糙度为0.1um，良品率为94％。 The thermal conductivity of the cut silicon nitride ceramic substrate is only 50·m -1 ·k -1 , the surface roughness is 0.1um, and the yield rate is 94%.
对比例2Comparative Example 2
与实施例1相比，不同的是切割方向为平行于织构化方向Compared with Example 1, the difference is that the cutting direction is parallel to the texturing direction
切割后的氮化硅陶瓷基板热导率仅为60·m -1·k -1，表面粗糙度为0.12um，良品率为95％。 The thermal conductivity of the cut silicon nitride ceramic substrate is only 60·m -1 ·k -1 , the surface roughness is 0.12um, and the yield rate is 95%.
对比例3Comparative Example 3
与实施例3相比，不同的是进给速度为0.15mm/min，锯丝线速度为20m/s，张紧力为20N，金刚石颗粒尺寸为200目，摆动角度为5°Compared with Example 3, the difference is that the feed speed is 0.15mm/min, the wire speed is 20m/s, the tensioning force is 20N, the diamond particle size is 200 mesh, and the swing angle is 5°
切割后的氮化硅陶瓷基板热导率仅为60·m -1·k -1，表面粗糙度为0.2um，良品率为60％。 The thermal conductivity of the cut silicon nitride ceramic substrate is only 60·m -1 ·k -1 , the surface roughness is 0.2um, and the yield rate is 60%.
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详细描述的部分，可以参见其他实施例的相关描述。In the above-mentioned embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，尚且本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention. Thus, even if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.
以上所述，为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到各种等效的修改或替换，这些修改或替换都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以权利要求的保护范围为准。The above are the specific embodiments of the present invention, but the protection scope of the present invention is not limited to this. Any person skilled in the art can easily think of various equivalent modifications within the technical scope disclosed by the present invention. or replacement, these modifications or replacements should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims (10)

  1. 一种基于电镀金刚石线锯切割织构化氮化硅陶瓷基板的方法，其特征在于，所述方法应用于织构化氮化硅陶瓷中，所述方法包括：通过电镀金刚石线锯沿着与所述织构化氮化硅陶瓷的织构化方向垂直的方向将所述织构化氮化硅陶瓷切割为织构化氮化硅陶瓷基板。A method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw, characterized in that the method is applied to textured silicon nitride ceramics, and the method comprises: by electroplating a diamond wire saw along the A direction perpendicular to the textured direction of the textured silicon nitride ceramic cuts the textured silicon nitride ceramic into a textured silicon nitride ceramic substrate.
  2. 根据权利要求1所述的基于电镀金刚石线锯切割织构化氮化硅陶瓷基板的方法，其特征在于，所述织构化氮化硅陶瓷固定于所述电镀金刚石线锯的载物台上，所述织构化氮化硅陶瓷的织构化方向与所述电镀金刚石线锯的金刚石线垂直。The method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw according to claim 1, wherein the textured silicon nitride ceramic is fixed on a stage of the electroplated diamond wire saw , the textured direction of the textured silicon nitride ceramic is perpendicular to the diamond wire of the electroplated diamond wire saw.
  3. 根据权利要求1所述的基于电镀金刚石线锯切割织构化氮化硅陶瓷基板的方法，其特征在于，所述电镀金刚石线锯的工件进给速度设定为0.08mm/min-0.12mm/min。The method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw according to claim 1, wherein the workpiece feed speed of the electroplated diamond wire saw is set to 0.08mm/min-0.12mm/min. min.
  4. 根据权利要求1所述的基于电镀金刚石线锯切割织构化氮化硅陶瓷基板的方法，其特征在于，所述电镀金刚石线锯的锯丝线速度设定为30-35m/s。The method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw according to claim 1, wherein the wire speed of the electroplated diamond wire saw is set to 30-35 m/s.
  5. 根据权利要求1所述的基于电镀金刚石线锯切割织构化氮化硅陶瓷基板的方法，其特征在于，所述电镀金刚石线锯的金刚石线的张紧力设定为27N-30N。The method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw according to claim 1, wherein the tension force of the diamond wire of the electroplated diamond wire saw is set to 27N-30N.
  6. 根据权利要求1所述的基于电镀金刚石线锯切割织构化氮化硅陶瓷基板的方法，其特征在于，所述电镀金刚石线锯的金刚石线的摆动角度设定为7-9°。The method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw according to claim 1, wherein the swing angle of the diamond wire of the electroplated diamond wire saw is set to 7-9°.
  7. 根据权利要求1所述的基于电镀金刚石线锯切割织构化氮化硅陶瓷基板的方法，其特征在于，所述电镀金刚石线锯的金刚石线的金刚石的目数为300-400目。The method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw according to claim 1, wherein the diamond wire of the electroplated diamond wire saw has a diamond mesh number of 300-400 meshes.
  8. 一种织构化氮化硅陶瓷基板，其特征在于，所述织构化氮化硅陶瓷基板由权利要求1-7任一项所述的基于电镀金刚石线锯切割织构化氮化硅陶瓷基板的方法制备。A textured silicon nitride ceramic substrate, characterized in that, the textured silicon nitride ceramic substrate is made of the textured silicon nitride ceramic cut by an electroplated diamond wire saw according to any one of claims 1-7 Method for preparing the substrate.
  9. 根据权利要求8所述的织构化氮化硅陶瓷基板，其特征在于，所述织构化氮化硅陶瓷基板的热导率超过100m -1﹒k -1，所述织构化氮化硅陶瓷基板的表面粗糙度小于0.1μm。 The textured silicon nitride ceramic substrate according to claim 8, wherein the thermal conductivity of the textured silicon nitride ceramic substrate exceeds 100 m -1 ﹒ k −1 , the surface roughness of the textured silicon nitride ceramic substrate is less than 0.1 μm.
  10. 如权利要求8-9任一项所述的织构化氮化硅陶瓷基板在电子器件基板中的应用。Application of the textured silicon nitride ceramic substrate according to any one of claims 8 to 9 in an electronic device substrate.
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