TW202237363A - Crystal ingot slicing device and crystal ingot slicing method - Google Patents

Abstract

A crystal ingot slicing device and a crystal ingot slicing method are provided. The crystal ingot slicing method is used to implement the crystal ingot slicing device and is configured to cut a crystal ingot into multiple wafers. The crystal ingot slicing device includes two sacrificial members, a plurality of rollers, and at least one cutting line movably wound around the plurality of rollers. The two sacrificial members each have a groove and a top surface, and the two grooves are respectively configured to receive and abut on opposite sides of the crystal ingot. In a cross section view of the two sacrificial members and the crystal ingot, each of the two grooves corresponding to a central axis of the crystal ingot forms a central angle between 60 degrees and 180 degrees. When the at least one cutting line cuts the crystal ingot and the two sacrificial members, the at least one cutting line starts to cut from the top surface of one of the sacrificial members, and then cuts the crystal ingot to form the plurality of wafers.

Description

Crystal rod slicing device and crystal rod slicing method

The invention relates to a crystal rod slicing device and a crystal rod slicing method, in particular to a crystal rod slicing device and a crystal rod slicing method for cutting wire cutting with a thin wire diameter.

Existing ingot slicers usually use cutting wires with thick wire diameters (wire diameter≧120μm), and most of the wire diameters used in the industry are 120um. However, when the above-mentioned cutting wire cuts the crystal ingot, it is easy to cut off too much material from the crystal ingot because the wire diameter is too thick, which leads to an increase in production cost. Therefore, nowadays, there are crystal ingot slicers that use a cutting wire with a thin wire diameter (diameter <120 μm) to cut the crystal ingot to overcome the above-mentioned problems.

However, if the existing ingot slicer is changed to a cutting wire with a thin wire diameter, when the ingot is cut, the cutting wire is likely to shake because of its thin wire diameter, so that the multiple thin wafers produced after the ingot is cut, its Both the slit end and the adhesive surface will produce uneven and shaking lines, which will lead to poor morphology and geometry of the thin wafer.

In view of the above-mentioned defects, the prior art (such as: Chinese Patent No. CN203004087U) mainly prevents the produced wafers from falling during the cutting process by providing a cutting pad on which the ingot can be placed, or by reducing the vibration of the cutting line. . Furthermore, taking Chinese Patent No. CN203004087U as an example, it avoids the chip falling off during the crystal ingot cutting process by the technical means of "setting a U-shaped groove on the pad substrate of the cutting pad". Lead to the generation of fragments; Take Chinese Patent No. CN102059750A as an example, it is by "adding a small sheave with a diameter smaller than the main sheave between the two main sheaves of the guide wheel part of the diamond wire cutting equipment" technical means , reducing the shaking of the steel wire during the cutting process of the diamond wire saw, and improving the processing quality of the silicon wafer.

However, although the technical means used to reduce chip breakage and wafer line marks have been disclosed in the prior art, these technical means are not applied to the situation of "cutting the ingot with a diamond cutting line with a thin wire diameter", resulting in When thin wafers are to be produced with the prior art, uneven and wobbling line marks will still be produced. Therefore, how to overcome the above-mentioned defects by improving the structural design of the existing ingot slicer has become one of the important issues to be solved by this project.

The technical problem to be solved by the present invention is to provide a crystal rod slicing device for cutting a crystal rod into multiple wafers in view of the deficiencies in the prior art. The crystal rod slicing device includes: two sacrificial materials, each with a concave Groove and a top surface relative to the groove, and the two grooves of the two sacrificial materials are used to respectively accommodate and abut against the opposite sides of the crystal rod; wherein, in the two In a cross-section of the sacrificial material and the ingot, the groove of each sacrificial material forms a central angle between 60 degrees and 180 degrees corresponding to a central axis of the ingot; rollers arranged at intervals from each other; and at least one cutting line movably wound around the plurality of rollers, and the diameter of at least one cutting line is between 60 microns (μm) and 100 microns; wherein, when When at least one of the cutting lines is used to cut the crystal rod and the two sacrificial materials, at least one of the cutting lines starts cutting from the top surface of one of the sacrificial materials, and then cuts the crystal rod dicing to form a plurality of said wafers.

In order to solve the above-mentioned technical problems, one of the technical solutions adopted by the present invention is to provide a crystal rod slicing method, including: a protection step: setting two sacrificial materials on the outer surface of a crystal rod respectively; wherein, the two Each of the sacrificial materials has a groove and a top surface opposite to the groove, and the two grooves of the two sacrificial materials are used to respectively accommodate and abut against opposite sides of the crystal rod position; wherein, in a cross-section of the two sacrificial materials and the crystal ingot, the groove of each sacrificial material corresponds to a central axis of the crystal ingot and is formed between 60° and 180° and a cutting step: using at least one cutting line to cut from the top surface of any one of the sacrificial materials, and then cutting two of the sacrificial materials and the crystal rod, so that the crystal rod A plurality of the wafers are formed; wherein, at least one of the cutting lines has a diameter ranging from 60 micrometers (μm) to 100 micrometers.

One of the beneficial effects of the present invention is that the crystal rod slicing device and the crystal rod slicing method provided by the present invention can use "the two grooves of the two sacrificial materials to respectively accommodate and abut on opposite sides of the crystal rod” and “in the cross-sections of the two sacrificial materials and the crystal rod, the grooves of each sacrificial material correspond to the grooves of the crystal rod The central axis forms the central angle between 60 degrees and 180 degrees" to improve the concave-convex lines on the cut end and the adhesive surface of the wafer, and to improve the shape of the wafer and the Wafer geometry.

In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings related to the present invention. However, the provided drawings are only for reference and description, and are not intended to limit the present invention.

The following are specific examples to illustrate the implementation of the "ingot slicing device and ingot slicing method" disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only for simple illustration, and are not drawn according to the actual size, which is stated in advance. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention.

It should be understood that although terms such as "first", "second", and "third" may be used herein to describe various elements or signals, these elements or signals should not be limited by these terms. These terms are mainly used to distinguish one element from another element, or one signal from another signal. In addition, the term "or" used herein may include any one or a combination of more of the associated listed items depending on the actual situation.

[first embodiment]

1 to 3, the first embodiment of the present invention provides a crystal rod slicing device 100, which is used to cut a crystal rod 200 into multiple wafers, and the size of the crystal rod 200 is 3 to 4 inches. But the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the crystal rod 200 can also be replaced with a crystal ingot.

As shown in FIG. 1 , the crystal rod slicing device 100 includes two sacrificial materials 1 installed on the crystal rod 200 , a plurality of rollers 2 that are positioned corresponding to the crystal rod 200 and spaced apart from each other, and a movable At least one cutting line 3 wound around a plurality of said rollers 2 . It should be noted that in this embodiment, the sacrificial material 1 is described as collaborating with the above-mentioned roller 2 and at least one of the cutting lines 3, but in other embodiments not shown in the present invention, the sacrificial material 1 Material 1 can also be used alone (for example: sales) or used in conjunction with other components.

As shown in FIG. 1 , the two sacrificial materials 1 each have a groove 11 and a top surface 12 opposite to the groove 11 . From another point of view, in this embodiment, the two sacrificial materials 1 are rectangular parallelepiped, the length of which is the same as the length of the ingot 200, and any side of the two sacrificial materials 1 has the concave shape. Groove 11. Wherein, the structures of the two sacrificial materials 1 are mirror-symmetrical with respect to a central axis 202 of the crystal ingot 200 (for convenience of illustration, the central axis 202 is shown as a dot in FIG. 1 ), and each of the The composition material of the sacrificial material 1 includes resin, and the hardness of each of the sacrificial materials 1 is less than that of the ingot 200 , but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the structures of the two sacrificial materials 1 may not be mirror-symmetrical with respect to the central axis 202, and the lengths of the two sacrificial materials 1 are also the same. The length may not be the same as that of the crystal rod 200 .

More specifically, the two grooves 11 of the two sacrificial materials 1 are used to accommodate and abut against opposite sides of the crystal rod 200 respectively. Wherein, in a cross section of the two sacrificial materials 1 and the ingot 200 , the groove 11 of each sacrificial material 1 corresponds to the central axis 202 of the ingot 200 to form an intervening A central angle θ between 60° and 180°.

Furthermore, in this embodiment, the central angle θ of the groove 11 is preferably between 70 degrees and 120 degrees, and the two grooves 11 of the two sacrificial materials 1 The two central angles θ are equal, but the present invention is not limited thereto. For example, in other embodiments of the present invention not shown, the two central angles θ of the two grooves 11 of the two sacrificial materials 1 may also be unequal.

It should be noted that, assuming that the central angle θ is less than 70 degrees, the area of the two sacrificial materials 1 covering the crystal ingot 200 is not enough, resulting in that the crystal ingot 200 will easily produce serious line marks during cutting. Problem: Assuming that the central angle θ is greater than 120 degrees, the slicing efficiency of the crystal ingot 200 will be greatly reduced when cutting, and in order to make the central angle θ greater than 120 degrees, the volume of two sacrificial materials 1 needs to be If it is larger, more materials will be used, resulting in a substantial increase in the overall cost of the crystal ingot slicing device 100 .

As shown in Table 1, the following table includes the experimental group 1, the control group 1, the experimental group 2, and the control group 2 respectively. Wherein, in the experimental group 1 and the control group 1, the size of the wafer cut out by the crystal rod 200 is 3 inches; The size of the wafer is 4 inches.

It should be noted that the main difference between the above experimental groups and the control groups lies in the size of the wafer and the ratio of any one of the sacrificial materials 1 covering the ingot 200 . For the convenience of explanation and understanding, the experimental group 1 and the experimental group 2 will be described first, and the control group 1 and the control group 2 will be introduced later. Table 1 Experimental group 1 Control group 1 Experimental group 2 Control group 2 wafer thickness 160um≦Thickness≦400μm 160um≦Thickness≦400μm 160um≦Thickness≦400μm 160um≦Thickness≦400μm wafer size 3 inches 3 inches 4 inches 4 inches Wire diameter 60μm-80μm 60μm-80μm 60μm-80μm 60μm-80μm tension 8N-14N 8N-14N 8N-14N 8N-14N sacrificial material resin resin resin resin Any sacrificial material coated ingot ratio 1/6 arc length - 1/2 arc length <1/6 arc length 1/6 arc length - 1/2 arc length <1/6 arc length Wafer manufacturing line mark defect rate% ≦1% 50% ≦1% 20%

As shown in Figure 1 and Table 1, in the cross-sections of the two sacrificial materials 1 and the crystal ingot 200, when the angle of the central angle θ is between 60 degrees and 180 degrees, the experimental group 1 And the proportion of the ingot 200 in the experimental group 2 covered by any one of the sacrificial materials 1 is 1/6˜1/2 of the arc length of the ingot 200 . Further, in the experimental group 1, the proportion of any one of the sacrificial materials 1 covering the crystal rod 200 is preferably 1/4 of the arc length of the crystal rod 200; in the experimental group 2 , the proportion of any one of the sacrificial materials 1 covering the ingot 200 is preferably 1/5 of the arc length of the ingot 200 . Wherein, when the angle of the central angle θ is less than 60 degrees, the ratio of the ingots 200 in the control group 1 and the control group 2 to be covered by any one of the sacrificial materials 1 is less than 1/6 of the ingots The arc length of 200.

It should be noted that, as shown in Table 1, the defect rate of wafer manufacturing line marks of a plurality of wafers made under the conditions of the experimental group 1 is not more than 1%, while compared with the experimental group 1, the defect rate of the wafers in the control group 1 is not greater than 1%. The defect rate of wafer manufacturing line mark of a plurality of described wafers made under the condition of experimental group 2 is 50%; The defect rate of wafer manufacturing line mark of a plurality of described wafers made under the condition of experimental group 2 is not more than 1%, and Compared with the experimental group 2, the defect rate of wafer manufacturing lines of the plurality of wafers manufactured under the conditions of the control group 2 was 20%.

Based on the above, it can be seen that the crystal ingot slicing device 100 and the crystal ingot slicing method can pass "when the angle of the central angle θ is between 60 degrees and 180 degrees, the crystal ingot 200 is cut by any one of the sacrificial materials." 1 coating ratio of 1/6 to 1/2 of the arc length of the crystal ingot 200" technical solution to improve the incision end of the wafer and the concave-convex line marks on the glue surface, and reduce multiple The wafer manufacturing line mark defect rate of the above-mentioned wafer.

When the proportion of the ingot 200 covered by any one of the sacrificial materials 1 is higher, the stability of the ingot 200 during cutting is higher, and the incision end of the wafer and the concave-convex line on the adhesive surface The greater the degree of improvement of scars.

It should be noted that, in the cross-sections of the two sacrificial materials 1 and the ingot 200 , the top surface 12 of each sacrificial material 1 is opposite to the outer surface 201 of the ingot 200 The shortest distance between them is defined as a first distance D1, which is not less than 6 millimeters (mm), and the first distance D1 is preferably between 8 millimeters and 10 millimeters.

Specifically, assuming that the first distance D1 is less than 6 millimeters, the sacrificial material 1 is likely to break due to the vibration of at least one of the cutting lines 3 during cutting, resulting in the ingot 200 being cut during cutting. It is easy to produce line marks and increase the difficulty of processing the crystal ingot 200 by the crystal ingot slicing device 100; assuming that the first distance D1 is greater than 10 mm, the amount of material used to make the sacrificial material 1 will increase, and It takes more time to cut the sacrificial material 1 , which greatly increases the overall cost of the ingot slicing device 100 and greatly reduces the cutting efficiency of the ingot slicing device 100 .

As mentioned above, the ingot slicing device 100 can pass through “the first distance D1 between the top surface 12 of each sacrificial material 1 and the outer surface 201 of the ingot 200 The technical means of not less than 6 mm" makes the sacrificial material 1 not easy to break and can firmly abut against the opposite sides of the crystal rod 200 .

As shown in FIG. 1 , when the multiple rollers 2 rotate, at least one cutting line 3 is driven by the multiple rollers 2 and has a cutting function similar to that of a chain saw. Wherein, the number of the plurality of rollers 2 in this embodiment is two, but the present invention is not limited thereto. For example, in other unillustrated embodiments of the present invention, the number of the plurality of rollers 2 may also be more than three.

It should be noted that, in this embodiment, the two rollers 2 do not move. On the contrary, the crystal bar 200 and the two sacrificial materials 1 can move along a cutting direction C, so that the crystal The rod 200 approaches and is cut by at least one of said cutting lines 3, but the invention is not limited thereto. For example, in other unillustrated embodiments of the present invention, the crystal ingot 200 may not move, and the two rollers 2 may also move along the cutting direction C, so that at least one of the The cutting line 3 approaches and cuts the ingot 200 .

It should be noted that, as shown in Figure 3, when at least one cutting line 3 is wound on a plurality of the rollers 2, at least one cutting line 3 includes a A plurality of parallel cutting segments 31, a distance between any two adjacent cutting segments 31 is defined as a second distance D2, which is between 235 microns (μm) and 495 microns, and the first The distance D2 is preferably between 275 microns and 415 microns.

Based on the above, the ingot slicing device 100 can pass "at least one of the cutting lines 3 includes a plurality of cutting segments 31 facing one of the sacrificial materials 1 and parallel to each other, and any two adjacent The technical means that the second distance D2 between the cutting segments 31 is between 235 microns and 495 microns enables the ingot 200 to be cut with at least one cutting line 3 to form a thickness between 160 A plurality of said wafers ranging from microns to 400 microns.

Further, when the second distance D2 is between 275 microns and 415 microns, the ingot 200 can be cut by at least one cutting line 3 to form a polycrystalline body with a thickness between 200 microns and 320 microns. of the wafers.

As shown in Figure 2, the wire diameter 3R of at least one of the cutting wires 3 is between 60 microns and 100 microns, and the wire diameter 3R is preferably between 60 microns and 80 microns, and the tension of at least one of the cutting wires 3 The range is positively correlated with the diameter range of at least one cutting line 3 . Wherein, the tension range of at least one cutting line 3 is between 8 Newton and 14 Newton (N), and the tension range is preferably between 10 Newton and 12 Newton, so that at least one cutting line 3 is cutting When the ingot 200 is used, the probability of at least one of the cutting lines 3 vibrating is reduced.

It should be noted that, taking the number of the cutting line 3 as an example, the cutting line 3 includes a line body 32 and a plurality of diamond pieces 33 arranged on the line body 32, and the cutting line 3 The wire diameter 3R is the wire diameter of the wire body 32 , not the wire diameter of the entire cutting wire 3 including a plurality of the diamond pieces 33 .

Based on the above, the crystal rod slicing device 100 can pass "the wire diameter 3R of at least one cutting line 3 is between 60 microns and 100 microns, and the tension range of at least one cutting line 3 is the same as that of at least one The wire diameter range of the cutting line 3 is positively correlated, and the tension range of at least one of the cutting lines 3 is between 8 Newton and 14 Newton (N) "technical means, so that at least one of the cutting lines 3 can cut When the ingot 200 is formed, the probability of at least one of the cutting lines 3 vibrating is reduced, thereby improving the concave-convex lines on the cut end and the adhesive surface of the wafer.

Specifically, the crystal ingot slicing device 100 can "use at least one cutting wire 3 with a thin wire diameter (the wire diameter 3R is between 60 microns and 100 microns)" and "use two sacrificial materials 1 In the cross-section of the crystal rod 200 , the ratio of the groove 11 of each sacrificial material 1 covering the crystal rod 200 is 1/6 of the arc length of the crystal rod 200 ~ 1/2 arc length" technical means, so that the crystal ingot 200 can be cut by at least one cutting line 3 to form a plurality of wafers with a thickness ranging from 160 microns to 400 microns, and improve each of the wafers. The problem of concave-convex lines on the cutting end of the wafer and the adhesive surface, thereby improving the shape of each wafer and the geometry of each wafer.

It should be noted that when at least one cutting line 3 is used to cut the crystal ingot 200 and two sacrificial materials 1 , at least one cutting line 3 starts from the top of one of the sacrificial materials 1 . The surface 12 starts to cut, and then cuts the ingot 200 to form a plurality of wafers. Wherein, the top surface 12 of the sacrificial material 1 adjacent to at least one of the cutting lines 3 is parallel to a horizontal plane, and the top surface 12 of the other sacrificial material 1 that is relatively far away from at least one of the cutting lines 3 The plane 12 is also parallel to the horizontal plane, but the invention is not limited thereto. For example, in other embodiments not shown in the present invention, the top surface 12 of the sacrificial material 1 adjacent to at least one cutting line 3 may also be non-parallel to the horizontal plane.

[Second embodiment]

Please refer to Fig. 4, which is the second embodiment of the present invention. What needs to be explained first is that this embodiment is similar to the first embodiment above, so the similarities between the two embodiments will not be repeated (such as: Said sacrificial material 1); moreover, this embodiment corresponds to the relevant quantity and appearance mentioned in the drawings, which are only used to specifically illustrate the implementation mode of the present invention, so as to facilitate the understanding of the content of the present invention, and are not used to limit protection scope of the present invention.

As shown in FIG. 4 , the second embodiment of the present invention provides a crystal rod slicing method, which is used to implement the crystal rod slicing device 100 provided in the first embodiment of the present invention. The crystal rod slicing method at least sequentially includes The following steps: a protection step S101 and a cutting step S103.

During the execution of the protecting step S101 , two sacrificial materials 1 are respectively disposed on the outer surface 201 of the crystal ingot 200 . Wherein, each of the two sacrificial materials 1 has the groove 11 and the top surface 12 opposite to the groove 11, and the two grooves 11 of the two sacrificial materials 1 are used to respectively It is accommodated and abutted against two opposite sides of the crystal ingot 200 . Wherein, in the cross-sections of the two sacrificial materials 1 and the ingot 200 , the groove 11 of each sacrificial material 1 is formed corresponding to the central axis 202 of the ingot 200 The central angle θ between 60 degrees and 180 degrees.

During the execution of the cutting step S103, at least one cutting line 3 is used to cut from the top surface 12 of any one of the sacrificial materials 1, and then cut two of the sacrificial materials 1 and the crystal ingot 200, so as to The ingot 200 is formed into a plurality of wafers. Wherein, the wire diameter 3R of at least one of the cutting wires 3 is between 60 microns and 100 microns, and the wire diameter 3R is preferably between 60 microns and 80 microns.

[Advantageous Effects of Embodiment]

One of the beneficial effects of the present invention is that the crystal rod slicing device 100 and the crystal rod slicing method provided by the present invention can use "the two grooves 11 of the two sacrificial materials 1 to accommodate and resist the connected to the opposite sides of the ingot 200” and “in the cross-sections of the two sacrificial materials 1 and the ingot 200, the grooves 11 of each sacrificial material 1 correspond to The technical solution of forming the central angle θ" between 60 degrees and 180 degrees on the central axis 202 of the crystal ingot 200, so as to improve the concave-convex lines of the incision end and the adhesive surface of the wafer, and improve the The topography of the wafer and the geometry of the wafer.

Furthermore, the crystal rod slicing device 100 provided by the present invention can pass through "in the cross-sections of the two sacrificial materials 1 and the crystal ingot 200, the top of each sacrificial material 1 The first distance D1 between the surface 12 and the outer surface 201 of the crystal ingot 200 is not less than 6 mm", so that the sacrificial material 1 is not easy to break and can be firmly abutted against the opposite sides of the crystal rod 200 .

Furthermore, the ingot slicing device 100 provided by the present invention can pass "the wire diameter 3R of at least one cutting line 3 is between 60 microns and 100 microns" and "the tension of at least one cutting line 3 The range is positively correlated with the diameter range of at least one of the cutting lines 3, and the tension range of at least one of the cutting lines 3 is between 8 Newton and 14 Newton (N)", so that at least one of the cutting lines When the wire 3 cuts the crystal ingot 200 , the probability of at least one of the cutting wires 3 vibrating is reduced, thereby improving the concave-convex lines on the cut end and the adhesive surface of the wafer.

Furthermore, the crystal rod slicing device 100 provided by the present invention can pass "at least one of the cutting lines 3 includes a plurality of the cutting segments 31 facing one of the sacrificial materials 1 and parallel to each other, adjacent The second distance D2 between any two cutting segments 31 is between 235 microns and 495 microns", so that the crystal ingot 200 can be cut with at least one cutting line 3 to form a thickness A plurality of said wafers ranging from 160 microns to 400 microns.

The content disclosed above is only a preferred feasible embodiment of the present invention, and does not therefore limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.

100: Ingot slicing device 1: sacrificial material 11: Groove 12: top surface 2: Roller 3: Cutting line 31: Cutting section 32: line body 33: Diamond slice 3R: wire diameter 200: Ingot 201: outer surface 202: central axis θ: Central angle C: cutting direction D1: first distance D2: second distance S101: Protection step S103: cutting step

FIG. 1 is a schematic diagram of an ingot slicing device cutting an ingot according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of the cutting line according to the first embodiment of the present invention.

FIG. 3 is a three-dimensional schematic view of the cutting wire wound on two rollers according to the first embodiment of the present invention.

FIG. 4 is a schematic flowchart of the steps of the crystal rod slicing method according to the second embodiment of the present invention.

100: Ingot slicing device

1: sacrificial material

11: Groove

12: top surface

2: Roller

3: Cutting line

200: Ingot

201: outer surface

202: central axis

θ: Central angle

C: cutting direction

D1: first distance

Claims (10)

A crystal rod slicing device is used to cut a crystal rod into a plurality of wafers, and the crystal rod slicing device comprises: Two sacrificial materials each have a groove and a top surface opposite to the groove, and the two grooves of the two sacrificial materials are used to accommodate and abut against opposite sides of the crystal bar respectively Two side positions; wherein, in a cross-section of the two sacrificial materials and the crystal rod, the groove of each sacrificial material corresponds to a central axis of the crystal rod to form between 60 degrees A central angle of ~180 degrees; a plurality of rollers spaced apart from each other; and At least one cutting line is movably wound around a plurality of the rollers, and the diameter of at least one of the cutting lines is between 60 microns (μm) and 100 microns; wherein, when at least one of the cutting lines is used for cutting When the crystal rod is connected with two sacrificial materials, at least one cutting line cuts from the top surface of one of the sacrificial materials, and then cuts the crystal rod to form a plurality of wafers. The crystal rod slicing device according to claim 1, wherein the structures of the two sacrificial materials are mirror-symmetrical with respect to the central axis. The crystal rod slicing device according to claim 1, wherein the constituent material of each sacrificial material includes resin, and the hardness of each sacrificial material is less than that of the crystal rod. The crystal rod slicing device according to claim 1, wherein, in the cross-sections of the two sacrificial materials and the crystal rod, the top surface of each sacrificial material is relative to the crystal rod The shortest distance between outer surfaces is not less than 6 millimeters (mm). The crystal rod slicing device according to claim 1, wherein the top surface of the sacrificial material adjacent to at least one of the cutting lines is non-parallel to a horizontal plane, and the other side is relatively far away from at least one of the cutting lines. The top surface of the sacrificial material is parallel to the horizontal plane. The wafer slicing device according to claim 1, wherein the central angle of the groove is between 70 degrees and 120 degrees. The crystal rod slicing device according to claim 1, wherein the central angles of the grooves of the two sacrificial materials are equal. The wafer slicing device according to claim 1, wherein the tension range of at least one cutting wire is positively correlated with the wire diameter range of at least one cutting wire, and the tension range of at least one cutting wire is between Between 8 Newton and 14 Newton (N). The crystal rod slicing device according to claim 1, wherein at least one of the cutting lines includes a plurality of cutting segments facing one of the sacrificial materials and parallel to each other, and between any two adjacent cutting segments A distance is between 235 micrometers (um)-495 micrometers, so that the ingot can be cut by at least one of the cutting lines to form a plurality of wafers with a thickness of 160 micrometers-400 micrometers. A crystal rod slicing method, comprising: A protection step: two sacrificial materials are respectively arranged on the outer surface of a crystal bar; wherein, each of the two sacrificial materials has a groove and a top surface relative to the groove, and the two sacrificial materials The two grooves of the material are used to respectively accommodate and abut against the opposite sides of the crystal rod; wherein, in a cross section of the two sacrificial materials and the crystal rod, each of the The groove of the sacrificial material forms a central angle between 60 degrees and 180 degrees corresponding to a central axis of the crystal rod; and A cutting step: using at least one cutting line to cut from the top surface of any one of the sacrificial materials, and then cutting two of the sacrificial materials and the crystal bar, so that the crystal bar forms a plurality of the wafers; Wherein, the diameter of at least one cutting line is between 60 micrometers (μm) and 100 micrometers.

Images