TWI777451B - Crystal ingot slicing device and crystal ingot slicing method - Google Patents

Abstract

A crystal ingot slicing device and a crystal ingot slicing method are provided. The crystal ingot slicing method is used to implement the crystal ingot slicing device and is configured to cut a crystal ingot into multiple wafers. The crystal ingot slicing device includes two sacrificial members, a plurality of rollers, and at least one cutting line movably wound around the plurality of rollers. The two sacrificial members each have a groove and a top surface, and the two grooves are respectively configured to receive and abut on opposite sides of the crystal ingot. In a cross section view of the two sacrificial members and the crystal ingot, each of the two grooves corresponding to a central axis of the crystal ingot forms a central angle between 60 degrees and 180 degrees. When the at least one cutting line cuts the crystal ingot and the two sacrificial members, the at least one cutting line starts to cut from the top surface of one of the sacrificial members, and then cuts the crystal ingot to form the plurality of wafers.

Description

Crystal rod slicing device and crystal rod slicing method

The present invention relates to a crystal ingot slicing device and a crystal ingot slicing method, in particular to a crystal ingot slicing device and a crystal ingot slicing method that are cut with a thin diameter cutting line.

Existing ingot slicers usually use a cutting wire with a thick wire diameter (wire diameter ≧120 μm), and most of the wire diameters currently used in the industry are 120 μm. However, when the ingot is cut by the above-mentioned cutting wire, too much material is easily cut from the ingot because the wire diameter is too thick, which in turn leads to an increase in production cost. Therefore, there are also ingot slicers today that use a cutting line with a thin wire diameter (wire diameter < 120 μm) to cut the ingot to overcome the above problems.

However, if the existing ingot slicing machine adopts a cutting wire with a fine wire diameter, when the ingot is cut, the cutting wire is easy to shake due to the thin wire diameter, so that the many thin wafers produced after the ingot is cut, the Both the cut end and the adhesive surface will produce wobbly line marks, resulting in poor topography and geometry of thin wafers.

Aiming at the above-mentioned defects, the prior art (eg, Chinese Patent No. CN203004087U) mainly provides a dicing pad for placing the ingot, or reduces the vibration of the dicing line, so as to prevent the produced chip from falling off during the dicing process . Further, taking Chinese Patent No. CN203004087U as an example, it is by the technical means of "arranging a U-shaped groove on the pad substrate of the cutting pad" to avoid the situation that the wafer falls off during the cutting process of the ingot. Continued Lead to the generation of debris; take Chinese Patent No. CN102059750A as an example, which is by the technical means of "adding a small sheave with a diameter smaller than the main sheave between the two main sheaves of the guide wheel part of the diamond wire cutting equipment" , reducing the vibration of the steel wire during the cutting process of the diamond wire saw, and improving the processing quality of the silicon wafer.

Of course, although the prior art has disclosed technical means for reducing wafer chipping and wafer line marks, these technical means are not applied to the situation of "cutting the ingot with a fine-diameter diamond cutting wire", resulting in When thin wafers are to be produced by the prior art, the line marks that are wobbly will still be produced. Therefore, how to overcome the above-mentioned defects by improving the structural design of the existing ingot slicer has become one of the important issues to be solved by this business.

The technical problem to be solved by the present invention is to provide a crystal ingot slicing device for cutting a crystal ingot into a plurality of wafers in view of the deficiencies of the prior art. The crystal ingot slicing device includes: two sacrificial materials, each with a concave a groove and a top surface opposite to the groove, and the two grooves of the two sacrificial materials are used to respectively accommodate and abut the opposite sides of the crystal rod; wherein, in the two In a cross section of the sacrificial material and the crystal rod, the groove of each sacrificial material forms a central angle ranging from 60 degrees to 180 degrees corresponding to a central axis of the crystal rod; a plurality of rollers, arranged at intervals from each other; and at least one cutting line, movably wound around the plurality of the rollers, and the wire diameter of the at least one cutting line is between 60 micrometers (μm) and 100 micrometers; wherein, when When at least one of the cutting lines is used to cut the ingot and the two sacrificial materials, at least one of the cutting lines starts cutting from the top surface of one of the sacrificial materials, and continues to cut the ingot. Dicing to form a plurality of the wafers.

In order to solve the above-mentioned technical problems, one of the technical solutions adopted by the present invention is to provide a method for slicing a crystal rod, which includes: a protection step: disposing two sacrificial materials on the outer surface of a crystal rod respectively; Each of the sacrificial materials has a groove and a top surface opposite to the groove, and the two grooves of the two sacrificial materials are used to respectively accommodate and abut on opposite sides of the ingot. Wherein, in a cross section of the two sacrificial materials and the crystal rod, the groove of each sacrificial material is formed between 60 degrees and 180 degrees corresponding to a central axis of the crystal rod. and a cutting step: using at least one cutting line to cut from the top surface of any one of the sacrificial materials, and then cutting two of the sacrificial materials and the ingot, so that the ingot is forming a plurality of the wafers; wherein, the diameter of at least one of the cutting lines ranges from 60 micrometers (μm) to 100 micrometers.

One of the beneficial effects of the present invention is that in the ingot slicing device and the ingot slicing method provided by the present invention, the two grooves of the two sacrificial materials can be used to respectively accommodate and abut On opposite sides of the crystal rod” and “in the cross-sections of the two sacrificial materials and the crystal rod, the grooves of each of the sacrificial materials correspond to the grooves of the crystal rod. The technical solution that the central axis forms the central angle between 60 degrees and 180 degrees” can improve the cut end of the wafer and the concave-convex line marks on the adhesive surface, and improve the morphology of the wafer and the Wafer geometry.

For a further understanding of the features and technical content of the present invention, please refer to the following detailed descriptions and drawings of the present invention. However, the drawings provided are only for reference and description, and are not intended to limit the present invention.

The following are specific examples to illustrate the embodiments of the "ingot slicing device and ingot slicing method" disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are merely schematic illustrations, and are not drawn according to the actual size, and are stated in advance. The following embodiments will further describe the related technical contents of the present invention in detail, but the disclosed contents are not intended to limit the protection scope of the present invention.

It should be understood that although terms such as "first", "second" and "third" may be used herein to describe various elements or signals, these elements or signals should not be limited by these terms. These terms are primarily used to distinguish one element from another element, or a signal from another signal. In addition, the term "or", as used herein, should include any one or a combination of more of the associated listed items, as the case may be.

[First Embodiment]

Referring to FIGS. 1 to 3 , the first embodiment of the present invention provides an ingot slicing device 100 for slicing an ingot 200 into a plurality of wafers, and the size of the ingot 200 is 3-4 inches. However, the present invention is not limited to this. For example, in other embodiments not shown in the present invention, the crystal rod 200 can also be replaced with a crystal ingot.

As shown in FIG. 1 , the ingot slicing device 100 includes two sacrificial materials 1 mounted on the ingot 200 , a plurality of rollers 2 located at intervals corresponding to the ingot 200 , and movable At least one cutting line 3 is provided around the plurality of rollers 2 . It should be noted that the sacrificial material 1 is described as being matched with the above-mentioned roller 2 and at least one of the cutting lines 3 in this embodiment, but in other embodiments not shown in the present invention, the sacrificial material 1 is Material 1 can also be used alone (eg, sold) or used with other components.

As shown in FIG. 1 , each of the two sacrificial materials 1 has a groove 11 and a top surface 12 opposite to the groove 11 . To put it another way, in this embodiment, the two sacrificial materials 1 are rectangular parallelepipeds whose length is the same as the length of the ingot 200 , and either side of the two sacrificial materials 1 has the concave shape. Slot 11. Wherein, the structures of the two sacrificial materials 1 are mirror-symmetrical with respect to a central axis 202 of the ingot 200 (for the convenience of illustration, the central axis 202 is in the shape of a point in FIG. 1 ). The constituent material of the sacrificial material 1 contains resin, and the hardness of each of the sacrificial materials 1 is smaller than that of the crystal rod 200 , but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the structures of the two sacrificial materials 1 may not be mirror-symmetrical with respect to the central axis 202 , and the lengths of the two sacrificial materials 1 may also be different. It may not be the same length as the ingot 200 .

In more detail, the two grooves 11 of the two sacrificial materials 1 are used to respectively accommodate and abut the opposite sides of the ingot 200 . Wherein, in a cross-section of the two sacrificial materials 1 and the crystal rod 200 , the groove 11 of each sacrificial material 1 corresponds to the central axis 202 of the crystal rod 200 to form a gap. A central angle θ between 60 degrees and 180 degrees.

Further, in this embodiment, the central angle θ of the groove 11 is preferably between 70 degrees and 120 degrees, and the two grooves 11 of the two sacrificial materials 1 have two The central angles θ are equal to each other, but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the two central angles θ of the two grooves 11 of the two sacrificial materials 1 may also be unequal.

It should be noted that, if the central angle θ is less than 70 degrees, the area of the two sacrificial materials 1 covering the ingot 200 is not enough, so that the ingot 200 will be prone to serious line marks during cutting Problem: Assuming that the central angle θ is greater than 120 degrees, the slicing efficiency of the ingot 200 during cutting will be greatly reduced, and in order to make the central angle θ greater than 120 degrees, the volume of two sacrificial materials 1 needs to be If it is larger, more materials will be required, resulting in a substantial increase in the overall cost of the ingot slicing device 100 .

As shown in Table 1, the following table includes experimental group 1, control group 1, experimental group 2, and control group 2, respectively. Among them, in the experimental group 1 and the control group 1, the size of the wafers cut from the crystal rod 200 is 3 inches; in the experimental group 2 and the control group 2, the size of the wafers cut from the crystal rod 200 The size of the wafer is 4 inches.

It should be noted that the main differences between the above experimental groups and the control groups lie in the size of the wafer and the ratio of any one of the sacrificial materials 1 covering the ingot 200 . For the convenience of explanation and understanding, the experimental group 1 and the experimental group 2 will be explained first, and then the control group 1 and the control group 2 will be introduced later. Table 1 Experimental group 1 control group 1 Experimental group 2 control group 2 Wafer thickness 160um≦Thickness≦400μm 160um≦Thickness≦400μm 160um≦Thickness≦400μm 160um≦Thickness≦400μm wafer size 3 inches 3 inches 4 inches 4 inches wire diameter 60μm-80μm 60μm-80μm 60μm-80μm 60μm-80μm tension 8N-14N 8N-14N 8N-14N 8N-14N sacrificial material resin resin resin resin The ratio of any sacrificial material to clad ingots 1/6 arc length - 1/2 arc length <1/6 arc length 1/6 arc length - 1/2 arc length <1/6 arc length Wafer manufacturing line mark defect rate% ≦1% 50% ≦1% 20%

As shown in FIG. 1 and Table 1, in the cross sections of the two sacrificial materials 1 and the ingot 200, when the angle of the central angle θ is between 60 degrees and 180 degrees, the experimental group 1 And the ratio of the ingot 200 covered by any one of the sacrificial materials 1 in the experimental group 2 is 1/6 to 1/2 of the arc length of the ingot 200 . Further, in the experimental group 1, the ratio of any one of the sacrificial materials 1 covering the ingot 200 is preferably 1/4 of the arc length of the ingot 200; in the experimental group 2 , the ratio of any one of the sacrificial materials 1 covering the ingot 200 is preferably 1/5 of the arc length of the ingot 200 . Wherein, when the angle of the central angle θ is less than 60 degrees, the ratio of the ingots 200 in the control group 1 and the control group 2 to be covered by any one of the sacrificial materials 1 is less than 1/6 of the ingots 200 arc length.

It should be noted that, as shown in Table 1, the wafer manufacturing line defect rate of a plurality of the wafers prepared under the conditions of the experimental group 1 is not more than 1%, and compared with the experimental group 1, the control group 1 The defective rate of wafer manufacturing line marks of a plurality of the wafers prepared under the conditions of experimental group 2 is 50%; the defective rate of wafer manufacturing line marks of a plurality of the wafers prepared under the conditions of experimental group 2 is not more than 1%, and Compared with the experimental group 2, the wafer manufacturing line defect rate of a plurality of the wafers produced under the conditions of the control group 2 was 20%.

Based on the above, it can be seen that the ingot slicing device 100 and the ingot slicing method can pass “when the angle of the central angle θ is between 60 degrees and 180 degrees, the ingot 200 is cut by any of the sacrificial materials. 1. The technical solution that the ratio of cladding is 1/6-1/2 of the arc length of the ingot 200, so as to improve the cut end of the wafer and the concave-convex line marks on the adhesive surface, and reduce the number of The wafer manufacturing line defect rate of the wafers.

When the ratio of the ingot 200 covered by any of the sacrificial materials 1 is higher, the stability of the ingot 200 during cutting is higher. The greater the improvement in marks.

It should be noted that, in the cross sections of the two sacrificial materials 1 and the crystal rod 200 , the top surface 12 of each sacrificial material 1 is relative to the outer surface 201 of the crystal rod 200 . The shortest distance between them is defined as a first distance D1, which is not less than 6 millimeters (mm), and the first distance D1 is preferably between 8 mm and 10 mm.

Specifically, assuming that the first distance D1 is less than 6 mm, the sacrificial material 1 is easily broken during cutting due to the vibration of at least one of the cutting wires 3 during cutting, resulting in the ingot 200 being cut during cutting Line marks are easily generated, and the processing difficulty of the ingot 200 by the ingot slicing device 100 is increased; if the first distance D1 is greater than 10 mm, the amount of material for making the sacrificial material 1 will increase, and It takes more time for the sacrificial material 1 to be cut, resulting in a substantial increase in the overall cost of the ingot slicing device 100 and a significant decrease in the cutting efficiency of the ingot slicing device 100 .

Based on the above, the ingot slicing device 100 can pass through “the first distance D1 between the top surface 12 of each sacrificial material 1 and the outer surface 201 of the ingot 200 . The technical means of not less than 6 mm” make the sacrificial material 1 not easily broken and can firmly abut on the opposite sides of the crystal rod 200 .

As shown in FIG. 1 , when the plurality of rollers 2 rotate, at least one of the cutting wires 3 is driven by the plurality of rollers 2 and has a cutting function similar to that of a chainsaw. Wherein, the number of the plurality of rollers 2 in this embodiment is two, but the present invention is not limited to this. For example, in other embodiments not shown in the present invention, the number of the plurality of rollers 2 may also be more than three.

It should be noted that, in this embodiment, the two rollers 2 do not move. On the contrary, the crystal rod 200 and the two sacrificial materials 1 can move along a cutting direction C, so that the crystal rod 200 and the two sacrificial materials 1 can move along a cutting direction C. The rod 200 is close to and cut by at least one of the cutting lines 3, but the invention is not limited thereto. For example, in other embodiments not shown in the present invention, the ingot 200 may not move, and the two rollers 2 may also move along the cutting direction C, so that at least one of the The cutting line 3 approaches and cuts the ingot 200 .

It should be noted that, as shown in FIG. 3 , when at least one of the cutting lines 3 is wound around a plurality of the rollers 2 , at least one of the cutting lines 3 includes a surface facing one of the sacrificial materials 1 and each other. A plurality of parallel cutting sections 31, a distance between any two adjacent cutting sections 31 is defined as a second distance D2, which is between 235 microns (μm) and 495 microns, and the first The two distances D2 are preferably between 275 microns and 415 microns.

Based on the above, the ingot slicing device 100 can pass through "at least one of the cutting lines 3 includes a plurality of the cutting segments 31 facing one of the sacrificial materials 1 and parallel to each other, and any two adjacent to each other. The second distance D2 between the cutting sections 31 is between 235 μm and 495 μm”, so that the crystal rod 200 can be cut by at least one of the cutting lines 3 to a thickness of 160 μm. A plurality of the wafers ranging from microns to 400 microns.

Further, when the second distance D2 is between 275 μm and 415 μm, the crystal rod 200 can be cut by at least one of the cutting lines 3 to form a plurality of thicknesses between 200 μm and 320 μm. one of the wafers.

As shown in FIG. 2 , the wire diameter 3R of at least one of the cutting wires 3 is between 60 μm and 100 μm, and the wire diameter 3R is preferably between 60 μm and 80 μm, and the tension of at least one of the cutting wires 3 is The range is positively correlated with the wire diameter range of at least one of the cutting wires 3 . Wherein, the tension range of at least one of the cutting wires 3 is between 8 Newtons and 14 Newtons (N), and the tension range is preferably between 10 Newtons and 12 Newtons, so that at least one of the cutting wires 3 can cut When the ingot 200 is placed, the probability of vibration of at least one of the cutting lines 3 is reduced.

It should be noted that, taking the number of the cutting lines 3 as an example, the cutting line 3 includes a line body 32 and a plurality of diamond pieces 33 arranged on the line body 32, and the cutting line 3 has a The wire diameter 3R is the wire diameter of the wire body 32 , not the wire diameter of the entire cutting wire 3 including a plurality of the diamond pieces 33 .

Based on the above, the ingot slicing device 100 can pass “the wire diameter 3R of at least one of the cutting wires 3 is between 60 μm and 100 μm, and the tension range of at least one of the cutting wires 3 is the same as that of the at least one cutting wire 3 . The wire diameter range of the cutting wire 3 is positively correlated, and the tension range of at least one of the cutting wires 3 is between 8 Newtons and 14 Newtons (N)” technical means, so that at least one of the cutting wires 3 is cutting When the ingot 200 is placed, the probability of at least one of the dicing lines 3 vibrating is reduced, and the concave-convex line marks on the cut end of the wafer and the adhesive surface are further improved.

Specifically, the ingot slicing device 100 can use at least one of the cutting wires 3 with a thin wire diameter (the wire diameter 3R is between 60 μm and 100 μm)” and “in two of the sacrificial materials 1 In the cross section of the crystal rod 200 , the ratio of the groove 11 of each sacrificial material 1 covering the crystal rod 200 is 1/6 of the arc length of the crystal rod 200 ～ 1/2 arc length” technical means, so that after the ingot 200 is cut by at least one of the cutting lines 3, a plurality of the wafers with a thickness ranging from 160 μm to 400 μm can be formed, and each of the The problem of concave-convex line marks on the open end of the wafer and the adhesive surface, thereby improving the topography of each of the wafers and the geometry of each of the wafers.

It should be noted that when at least one of the cutting lines 3 is used to cut the ingot 200 and the two sacrificial materials 1 , at least one of the cutting lines 3 is cut from the top of one of the sacrificial materials 1 . The face 12 is diced and the ingot 200 is diced to form a plurality of the wafers. Wherein, the top surface 12 of the sacrificial material 1 adjacent to at least one of the cutting lines 3 is parallel to a horizontal plane, and the top surface 12 of the other sacrificial material 1 that is relatively far away from at least one of the cutting lines 3 is parallel to a horizontal plane. The plane 12 is also parallel to the horizontal plane, but the invention is not limited to this. For example, in other embodiments not shown in the present invention, the top surface 12 of the sacrificial material 1 adjacent to at least one of the cutting lines 3 and the horizontal plane may also be non-parallel.

[Second Embodiment]

Please refer to FIG. 4 , which is the second embodiment of the present invention. It should be noted that this embodiment is similar to the above-mentioned first embodiment, so the similarities between the two embodiments will not be repeated. The sacrificial material 1); in addition, this embodiment corresponds to the relevant quantity and appearance mentioned in the accompanying drawings, and is only used to specifically describe the embodiment of the present invention, so as to facilitate the understanding of the content of the present invention, rather than to limit it. protection scope of the present invention.

As shown in FIG. 4 , a second embodiment of the present invention provides a method for slicing an ingot, which is used to implement the ingot slicing device 100 provided in the first embodiment of the present invention. The method for slicing an ingot at least sequentially includes: The following steps are: a protecting step S101 and a cutting step S103.

During the execution of the protecting step S101 , two sacrificial materials 1 are respectively disposed on the outer surface 201 of the crystal rod 200 . Wherein, each of the two sacrificial materials 1 has the groove 11 and the top surface 12 opposite to the groove 11 , and the two grooves 11 of the two sacrificial materials 1 are used to respectively It is accommodated and abutted against the opposite sides of the ingot 200 . Wherein, in the cross sections of the two sacrificial materials 1 and the crystal rod 200 , the groove 11 of each sacrificial material 1 is formed corresponding to the central axis 202 of the crystal rod 200 The central angle θ is between 60 degrees and 180 degrees.

During the execution of the cutting step S103, at least one cutting line 3 is used to cut from the top surface 12 of any one of the sacrificial materials 1, and then two of the sacrificial materials 1 and the ingot 200 are cut to cut The ingot 200 is formed into a plurality of the wafers. Wherein, the wire diameter 3R of at least one of the cutting wires 3 is between 60 μm and 100 μm, and the wire diameter 3R is preferably between 60 μm and 80 μm.

[Advantageous effects of the embodiment]

One of the beneficial effects of the present invention is that in the ingot slicing device 100 and the ingot slicing method provided by the present invention, the two grooves 11 of the two sacrificial materials 1 can be used to respectively accommodate and Connected to the opposite sides of the crystal rod 200” and “In the cross-sections of the two sacrificial materials 1 and the crystal rod 200, the grooves 11 of each of the sacrificial materials 1 correspond to The technical solution of forming the central angle θ" between 60 degrees and 180 degrees on the central axis 202 of the ingot 200 is to improve the cut end of the wafer and the concave-convex line marks on the adhesive surface, and improve the The topography of the wafer and the geometry of the wafer.

Furthermore, the crystal rod slicing device 100 provided by the present invention can pass through "in the cross-sections of the two sacrificial materials 1 and the crystal rod 200, the top of each of the sacrificial materials 1 The technical solution that the first distance D1 between the surface 12 and the outer surface 201 of the crystal rod 200 is not less than 6 mm”, so that the sacrificial material 1 is not easy to break and can firmly abut on the Opposite sides of the ingot 200 .

Furthermore, the ingot slicing device 100 provided by the present invention can pass “the wire diameter 3R of at least one of the cutting lines 3 is between 60 μm and 100 μm” and “the tension of at least one of the cutting lines 3 ” The range is positively related to the wire diameter range of at least one of the cutting wires 3, and the tension range of at least one of the cutting wires 3 is between 8 Newtons and 14 Newtons (N)”. When the wire 3 is cutting the ingot 200 , the probability of at least one of the cutting wires 3 vibrating is reduced, which in turn improves the cut end of the wafer and the concave-convex line marks on the adhesive surface.

Furthermore, the ingot slicing device 100 provided by the present invention can pass through “at least one of the cutting lines 3 includes a plurality of the cutting segments 31 facing one of the sacrificial materials 1 and parallel to each other, and the adjacent ones The technical solution that the second distance D2 between any two cutting segments 31 is between 235 microns and 495 microns” enables the ingot 200 to be cut by at least one of the cutting lines 3 to form a thickness A plurality of the wafers ranging from 160 microns to 400 microns.

The contents disclosed above are only preferred feasible embodiments of the present invention, and are not intended to limit the scope of the present invention. Therefore, any equivalent technical changes made by using the contents of the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.

100: Ingot Slicing Device 1: sacrificial material 11: Groove 12: Top surface 2: Roller 3: Cutting line 31: Cutting Segments 32: Line body 33: Diamond Piece 3R: wire diameter 200: crystal rod 201: External Surface 202: Central axis θ: central angle C: cutting direction D1: first distance D2: Second distance S101: Protection step S103: Cutting step

FIG. 1 is a schematic diagram of the operation of the ingot slicing device for cutting the ingot according to the first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of the cutting line according to the first embodiment of the present invention.

FIG. 3 is a three-dimensional schematic view of the cutting line wound around two rollers according to the first embodiment of the present invention.

FIG. 4 is a schematic flow chart of steps of a method for slicing an ingot according to a second embodiment of the present invention.

100: Ingot Slicing Device

1: sacrificial material

11: Groove

12: Top surface

2: Roller

3: Cutting line

200: crystal rod

201: External Surface

202: Central axis

θ: central angle

C: cutting direction

D1: first distance

Claims (10)

A crystal rod slicing device for cutting a crystal rod into a plurality of wafers, the crystal rod slicing device comprising: Two sacrificial materials, each with a groove and a top surface opposite to the groove, and the two grooves of the two sacrificial materials are used to respectively accommodate and abut the opposite sides of the ingot. Both sides; wherein, in a cross section of the two sacrificial materials and the crystal rod, the groove of each sacrificial material is formed between 60 degrees corresponding to a central axis of the crystal rod A central angle of ~180 degrees; a plurality of rollers, spaced apart from each other; and At least one cutting line is movably wound around a plurality of the rollers, and the diameter of the at least one cutting line is between 60 micrometers (μm) and 100 micrometers; wherein, when the at least one cutting line is used for cutting When the ingot and the two sacrificial materials are used, at least one of the cutting lines starts to cut from the top surface of one of the sacrificial materials, and then the ingot is cut to form a plurality of the wafers. The ingot slicing device according to claim 1, wherein the structures of the two sacrificial materials are mirror-symmetrical with respect to the central axis. The crystal ingot slicing device according to claim 1, wherein a constituent material of each of the sacrificial materials contains resin, and the hardness of each of the sacrificial materials is smaller than that of the crystal ingot. The crystal rod slicing device according to claim 1, wherein, in the cross-sections of the two sacrificial materials and the crystal rod, the top surface of each of the sacrificial materials is relative to the crystal rod. The shortest distance between the outer surfaces is not less than 6 millimeters (mm). The ingot slicing device of claim 1, wherein the top surface of the sacrificial material adjacent to at least one of the cutting lines is non-parallel to a horizontal plane, and is relatively far from the other one of the at least one cutting line The top surface of the sacrificial material is parallel to the horizontal plane. The ingot slicing device according to claim 1, wherein the central angle of the groove is between 70 degrees and 120 degrees. The ingot slicing device according to claim 1, wherein the central angles of the grooves of the two sacrificial materials are equal. The ingot slicing device according to claim 1, wherein the tension range of at least one cutting line is positively correlated with the wire diameter range of at least one cutting line, and the tension range of at least one cutting line is between At 8 Newtons to 14 Newtons (N). The ingot slicing device according to claim 1, wherein at least one of the cutting lines includes a plurality of cutting sections facing one of the sacrificial materials and parallel to each other, and between any two adjacent cutting sections A distance between 235 micrometers (um) and 495 micrometers, so that after the crystal rod is cut by at least one of the cutting lines, a plurality of the wafers with a thickness of 160 micrometers to 400 micrometers can be formed. A method for slicing a crystal rod, comprising: A protection step: disposing two sacrificial materials on the outer surface of an ingot, respectively; wherein each of the two sacrificial materials has a groove and a top surface opposite to the groove, and the two sacrificial materials have The two grooves of the material are used to respectively accommodate and abut the opposite sides of the crystal rod; wherein, in a cross section of the two sacrificial materials and the crystal rod, each of the The groove of the sacrificial material forms a central angle between 60 degrees and 180 degrees corresponding to a central axis of the ingot; and a cutting step: using at least one cutting line to cut from the top surface of any one of the sacrificial materials, and then cutting two of the sacrificial materials and the crystal rod, so that the crystal rods form a plurality of the wafers; Wherein, the diameter of at least one of the cutting lines ranges from 60 micrometers (μm) to 100 micrometers.

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