CN113085020B - Textured silicon nitride ceramic substrate and cutting method and application thereof - Google Patents
Textured silicon nitride ceramic substrate and cutting method and application thereof Download PDFInfo
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- CN113085020B CN113085020B CN202110348819.7A CN202110348819A CN113085020B CN 113085020 B CN113085020 B CN 113085020B CN 202110348819 A CN202110348819 A CN 202110348819A CN 113085020 B CN113085020 B CN 113085020B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/02—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing
- B28D1/06—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing with reciprocating saw-blades
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
Abstract
The embodiment of the invention discloses a textured silicon nitride ceramic substrate and a cutting method and application thereof, and relates to the technical field of silicon nitride ceramic substrate preparation. The above-mentionedThe method is applied to texturing silicon nitride ceramics, and comprises the following steps: and cutting the textured silicon nitride ceramic into a textured silicon nitride ceramic substrate by an electroplated diamond wire saw along a direction perpendicular to the texturing direction of the textured silicon nitride ceramic. In the embodiment of the invention, the textured silicon nitride ceramic is cut into the textured silicon nitride ceramic substrate along the direction vertical to the texturing direction of the textured silicon nitride ceramic by the electroplating diamond wire saw, so that the thickness direction of the obtained textured silicon nitride ceramic substrate is consistent with the texturing direction of the textured silicon nitride ceramic substrate, the textured silicon nitride ceramic substrate has better heat conduction performance, and the heat conductivity of the textured silicon nitride ceramic substrate exceeds 100m ‑1 ﹒k ‑1 Meanwhile, the surface roughness of the textured silicon nitride ceramic substrate is less than 0.1 μm, so that the requirement of the electronic device substrate on high thermal conductivity can be met.
Description
Technical Field
The invention relates to the technical field of silicon nitride ceramic substrate preparation, in particular to a textured silicon nitride ceramic substrate and a cutting method and application thereof.
Background
At present, the requirement for the heat conductivity of the ceramic substrate material is higher and higher, and the ceramic substrate prepared by the traditional tape casting method can only reach 60 W.m -1 k -1 。
Compared with untextured silicon nitride ceramics, the textured silicon nitride ceramics have more excellent performances, including strength, hardness and thermal conductivity.
The conventional silicon nitride ceramics have low thermal conductivity, which limits the application of the conventional silicon nitride ceramics as substrates of electronic components. Therefore, how to cut the silicon nitride ceramic substrate with high thermal conductivity becomes a technical problem to be solved in the field.
Disclosure of Invention
The technical problem to be solved by the embodiment of the invention is how to cut the silicon nitride ceramic substrate with high thermal conductivity.
In order to solve the above problem, in a first aspect, an embodiment of the present invention provides a method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw, the method being applied to a textured silicon nitride ceramic, and the method including: and cutting the textured silicon nitride ceramic into a textured silicon nitride ceramic substrate by an electroplated diamond wire saw along a direction perpendicular to the texturing direction of the textured silicon nitride ceramic.
The texturing silicon nitride ceramic is fixed on an objective table of the electroplated diamond wire saw, and the texturing direction of the texturing silicon nitride ceramic is vertical to the diamond wire of the electroplated diamond wire saw.
The further technical scheme is that the workpiece feeding speed of the electroplated diamond wire saw is set to be 0.08-0.12 mm/min.
The further technical scheme is that the linear speed of the wire of the electroplated diamond wire saw is set to be 30-35m/s.
The further technical scheme is that the tension of the diamond wire of the electroplated diamond wire saw is set to be 27N-30N.
The further technical scheme is that the swing angle of the diamond wire of the electroplated diamond wire saw is set to be 7-9 degrees.
The further technical scheme is that the mesh number of diamonds of the diamond wire of the electroplated diamond wire saw is 300-400 meshes.
In a second aspect, the embodiments of the present invention provide a textured silicon nitride ceramic substrate prepared by the method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw according to the first aspect.
The further technical proposal is that the thermal conductivity of the textured silicon nitride ceramic substrate exceeds 100m -1 ·k -1 And the surface roughness of the textured silicon nitride ceramic substrate is less than 0.1 mu m.
In a third aspect, embodiments of the present invention provide a use of the textured silicon nitride ceramic substrate according to the second aspect in an electronic device substrate.
Compared with the prior art, the embodiment of the invention can achieve the technical effects that:
in the embodiment of the invention, the textured silicon nitride ceramic is textured along the textured side by an electroplated diamond wire sawThe textured silicon nitride ceramic is cut into a textured silicon nitride ceramic substrate in the vertical direction, so that the thickness direction of the obtained textured silicon nitride ceramic substrate is consistent with the texturing direction, the textured silicon nitride ceramic substrate has better heat conduction performance, and the heat conductivity of the textured silicon nitride ceramic substrate exceeds 100m -1 ·k -1 Meanwhile, the surface roughness of the textured silicon nitride ceramic substrate is less than 0.1 mu m, so that the requirement of an electronic device substrate on high thermal conductivity can be met.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic diagram of a cutting direction of a method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, wherein like reference numerals represent like elements in the drawings. It is apparent that the embodiments to be described below are only a part of the embodiments of the present invention, and not all of them. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the embodiments of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the embodiments of the invention. As used in the description of embodiments of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
The silicon nitride ceramic in the embodiment of the invention refers to silicon nitride ceramic prepared by texturing, crystal grains are uniformly and tidily arranged along the texturing direction, and the molecular formula is Si 3 N 4 。
Referring to fig. 1, an embodiment of the present invention provides a method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw, which is applied to a textured silicon nitride ceramic to cut the textured silicon nitride ceramic substrate.
The method comprises the following steps: and cutting the textured silicon nitride ceramic into a textured silicon nitride ceramic substrate by an electroplated diamond wire saw along a direction perpendicular to the texturing direction of the textured silicon nitride ceramic. Wherein the cutting direction is as indicated by the arrow in figure 1.
Specifically, textured silicon nitride ceramic is fixed on the stage of the electroplated diamond wire saw, and simultaneously. So that the texturing direction of the textured silicon nitride ceramic is vertical to the diamond wire of the electroplated diamond wire saw. And starting the electroplated diamond wire saw to cut the textured silicon nitride ceramic substrate.
Further, the electroplated diamond wire saw can be specifically a swing type electroplated diamond wire saw, and the diamond mesh number of the diamond wire of the electroplated diamond wire saw is 300-400 meshes. Too large diamond particle size easily drops, and too small cutting force can be insufficient.
Meanwhile, the cutting parameters are set as follows: the workpiece feeding speed of the electroplated diamond wire saw is set to be 0.08-0.12 mm/min. Too high a feed rate can result in poor surface finish quality and too low a feed rate can result in inefficiencies.
The wire linear speed of the electroplated diamond wire saw is set to be 30-35m/s. Too high a wire speed can result in excessive wear and too low a can result in insufficient cutting force.
The tension of the diamond wire of the electroplated diamond wire saw is set to be 27N-30N. The swing angle of the diamond wire of the electroplating diamond wire saw is set to be 7-9 degrees.
The inventor researches and discovers that the textured silicon nitride ceramic has higher thermal conductivity along the direction parallel to the texturing direction, so that the textured silicon nitride ceramic is cut into textured silicon nitride ceramic substrates along the direction perpendicular to the texturing direction of the textured silicon nitride ceramic by the electroplated diamond wire saw, the thickness direction of the textured silicon nitride ceramic substrates obtained by the method is consistent with the texturing direction of the textured silicon nitride ceramic substrates, the textured silicon nitride ceramic substrates have better thermal conductivity, and the thermal conductivity of the textured silicon nitride ceramic substrates exceeds 100m -1 ·k -1 And meanwhile, the surface roughness of the textured silicon nitride ceramic substrate is less than 0.1 mu m.
The embodiment of the invention also provides a textured silicon nitride ceramic substrate obtained by the vegetation of the embodiment, and the thermal conductivity of the textured silicon nitride ceramic substrate exceeds 100m -1 ·k -1 The surface roughness is less than 0.1 μm.
The embodiment of the invention also provides application of the textured silicon nitride ceramic substrate in an electronic device substrate.
In order to better illustrate the technical solution of the present invention, specific examples are provided as follows:
example 1
The texturing direction of the textured silicon nitride ceramic is adjusted to be perpendicular to the diamond wire and the textured silicon nitride ceramic is clamped on an objective table of an electroplating diamond wire saw. The workpiece feeding speed of the electroplated diamond wire saw is adjusted to be 0.08mm/min through the control table, and the wire saw linear speed is set to be 30m/s. In the cutting process, the objective table and the instrument are required to be kept flat without other vibration influences, and the tension of the diamond wire of the electroplated diamond wire saw is set to be 27N in a pneumatic adjustment mode. In the cutting process, the diamond wire has a certain swing angle, and the swing angle is 7 degrees. And, the mesh number of diamond of the diamond wire is 300 meshes.
By the method of example 1, a total of 100 textured silicon nitride ceramic substrates were prepared having a thermal conductivity (average value) of102W·m -1 ·k -1 The surface roughness (average value) was 0.09um, and the yield was 96%.
Example 2
The texturing direction of the textured silicon nitride ceramic is adjusted to be perpendicular to the diamond wire and the textured silicon nitride ceramic is clamped on an objective table of an electroplating diamond wire saw. The workpiece feeding speed of the electroplated diamond wire saw is adjusted to be 0.10mm/min through the control table, and the wire sawing linear speed is set to be 30m/s. In the cutting process, the objective table and an instrument are required to be kept flat without other vibration influences, and the tension force of the diamond wire of the electroplated diamond wire saw is set to be 27N in a pneumatic adjusting mode. In the cutting process, the diamond wire has a certain swing angle, and the swing angle is 8 °. And, the mesh number of diamond wire is 350 meshes.
A total of 100 textured silicon nitride ceramic substrates were prepared by the method of example 2, with the prepared silicon nitride ceramic substrates having a thermal conductivity (average) of 102 W.m -1 ·k -1 Surface roughness (average value) 0.08um, and yield 95%.
Example 3
The texturing direction of the textured silicon nitride ceramic is adjusted to be perpendicular to the diamond wire and the textured silicon nitride ceramic is clamped on an objective table of an electroplating diamond wire saw. The workpiece feeding speed of the electroplated diamond wire saw is adjusted to be 0.12mm/min through the control table, and the wire saw linear speed is set to be 35m/s. In the cutting process, the objective table and an instrument are required to be kept flat without other vibration influences, and the tension force of the diamond wire of the electroplated diamond wire saw is set to be 30N in a pneumatic adjusting mode. In the cutting process, the diamond wire has a certain swing angle, and the swing angle is 9 °. The diamond wire had a mesh number of 400.
A total of 100 textured silicon nitride ceramic substrates were prepared by the method of example 3, with the prepared silicon nitride ceramic substrates having a thermal conductivity (average) of 102 W.m -1 ·k -1 Surface roughness (average value) 0.08um, and yield 95%.
Comparative example 1
In contrast to example 1, except that untextured silicon nitride ceramic was used for diamond wire saw cutting.
The thermal conductivity of the silicon nitride ceramic substrate after cutting is only 50 m -1 ·k -1 The surface roughness is 0.1um, and the yield is 94%.
Comparative example 2
Compared to example 1, except that the cutting direction was parallel to the texturing direction
The thermal conductivity of the cut silicon nitride ceramic substrate is only 60 m -1 ·k -1 The surface roughness is 0.12um, and the yield is 95%.
Comparative example 3
Compared with example 3, except that the feeding speed was 0.15mm/min, the wire sawing linear speed was 20m/s, the tension was 20N, the diamond particle size was 200 mesh, and the swing angle was 5 °
The thermal conductivity of the cut silicon nitride ceramic substrate is only 60 m -1 ·k -1 The surface roughness is 0.2um, and the yield is 60%.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, while the invention has been described with respect to the above-described embodiments, it will be understood that the invention is not limited thereto but may be embodied with various modifications and changes.
While the invention has been described with reference to specific embodiments, the scope of the invention is not limited thereto, and various equivalent modifications and substitutions may be easily made by those skilled in the art within the technical scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (3)
1. A method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw, the method being applied to a textured silicon nitride ceramic, the method comprising: cutting the textured silicon nitride ceramic into a textured silicon nitride ceramic substrate by an electroplated diamond wire saw along a direction perpendicular to the texturing direction of the textured silicon nitride ceramic;
the textured silicon nitride ceramic is fixed on an object stage of the electroplated diamond wire saw, and the texturing direction of the textured silicon nitride ceramic is vertical to the diamond wire of the electroplated diamond wire saw;
the workpiece feeding speed of the electroplated diamond wire saw is set to be 0.08-0.12 mm/min;
the wire sawing linear speed of the electroplated diamond wire saw is set to be 30-35m/s;
the tension of the diamond wire of the electroplated diamond wire saw is set to be 27N-30N;
the method is characterized in that the swinging angle of the diamond wire of the electroplating diamond wire saw is set to be 7-9 degrees;
the diamond mesh number of the diamond wire of the electroplated diamond wire saw is 300-400 meshes;
the textured silicon nitride ceramic substrate has a thermal conductivity exceeding 100W m -1 ·k -1 And the surface roughness of the textured silicon nitride ceramic substrate is less than 0.1 mu m.
2. A textured silicon nitride ceramic substrate prepared by the method for cutting a textured silicon nitride ceramic substrate based on an electroplated diamond wire saw according to claim 1.
3. Use of the textured silicon nitride ceramic substrate of claim 2 in an electronic device substrate.
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| CN202110348819.7A CN113085020B (en) | 2021-03-31 | 2021-03-31 | Textured silicon nitride ceramic substrate and cutting method and application thereof |
| PCT/CN2021/130594 WO2022205932A1 (en) | 2021-03-31 | 2021-11-15 | Textured silicon nitride ceramic substrate, and cutting method therefor and application thereof |
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| JP2842307B2 (en) * | 1995-06-30 | 1999-01-06 | 住友電気工業株式会社 | Method for cutting III-V compound semiconductor crystal |
| JP2001001335A (en) * | 1999-06-22 | 2001-01-09 | Toshiba Ceramics Co Ltd | Method for slicing single crystal silicon ingot by using wire saw |
| US6596079B1 (en) * | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
| JP2007276097A (en) * | 2006-04-03 | 2007-10-25 | Takatori Corp | Wire saw |
| CN103448153B (en) * | 2013-08-23 | 2016-02-03 | 蓝思科技股份有限公司 | A kind of cutting technique of sapphire ingot and processing jig thereof |
| CN103600427A (en) * | 2013-12-18 | 2014-02-26 | 苏州奇盟晶体材料制品有限公司 | Multi-wire saw for cutting high-hardness materials |
| CN103708829B (en) * | 2013-12-19 | 2016-04-06 | 桂林电子科技大学 | A kind of unusual Piezoelectric Anisotropy leadless piezoelectric ceramics and texturing preparation method thereof |
| CN105957958A (en) * | 2016-05-04 | 2016-09-21 | 中国工程物理研究院流体物理研究所 | La2Ti2O7 or solid solution material application in high temperature piezoelectric transducer and prepared transducer |
| CN207736546U (en) * | 2017-12-24 | 2018-08-17 | 哈尔滨奥瑞德光电技术有限公司 | A kind of zirconia ceramics line, which is cut, uses fixing device |
| CN110948711A (en) * | 2019-08-01 | 2020-04-03 | 常熟华融太阳能新型材料有限公司 | Preparation method of IGBT ceramic substrate |
| CN112261784B (en) * | 2020-10-12 | 2022-10-14 | 衡阳凯新特种材料科技有限公司 | Processing technology for manufacturing silicon nitride ceramic circuit substrate |
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