WO2022196606A1 - 酸触媒担持型ポリマーを含むレジスト下層膜形成組成物 - Google Patents
酸触媒担持型ポリマーを含むレジスト下層膜形成組成物 Download PDFInfo
- Publication number
- WO2022196606A1 WO2022196606A1 PCT/JP2022/011190 JP2022011190W WO2022196606A1 WO 2022196606 A1 WO2022196606 A1 WO 2022196606A1 JP 2022011190 W JP2022011190 W JP 2022011190W WO 2022196606 A1 WO2022196606 A1 WO 2022196606A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group
- carbon atoms
- underlayer film
- resist underlayer
- formula
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 88
- 229920000642 polymer Polymers 0.000 title claims abstract description 84
- 239000002253 acid Substances 0.000 title claims abstract description 53
- 150000001875 compounds Chemical class 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 239000002904 solvent Substances 0.000 claims abstract description 16
- -1 cyanomethyl group Chemical group 0.000 claims description 178
- 125000004432 carbon atom Chemical group C* 0.000 claims description 102
- 125000000217 alkyl group Chemical group 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 31
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 30
- 125000003118 aryl group Chemical group 0.000 claims description 28
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 25
- 125000005843 halogen group Chemical group 0.000 claims description 24
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 24
- 125000000962 organic group Chemical group 0.000 claims description 23
- 125000003545 alkoxy group Chemical group 0.000 claims description 18
- 125000002947 alkylene group Chemical group 0.000 claims description 18
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 17
- 125000003342 alkenyl group Chemical group 0.000 claims description 16
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 16
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 15
- 125000001931 aliphatic group Chemical group 0.000 claims description 14
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 14
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 14
- 125000004122 cyclic group Chemical group 0.000 claims description 12
- 238000010894 electron beam technology Methods 0.000 claims description 12
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims description 12
- 229920006395 saturated elastomer Polymers 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 10
- 239000003431 cross linking reagent Substances 0.000 claims description 10
- 125000004414 alkyl thio group Chemical group 0.000 claims description 9
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 125000004957 naphthylene group Chemical group 0.000 claims description 8
- 125000004653 anthracenylene group Chemical group 0.000 claims description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 6
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 5
- 125000001072 heteroaryl group Chemical group 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 125000003277 amino group Chemical group 0.000 claims description 4
- 125000002228 disulfide group Chemical group 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 claims description 3
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- 125000001624 naphthyl group Chemical group 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 125000000547 substituted alkyl group Chemical group 0.000 claims description 3
- RAHZWNYVWXNFOC-UHFFFAOYSA-N sulfur dioxide Inorganic materials O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 83
- 239000000243 solution Substances 0.000 description 38
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 30
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 23
- 238000003786 synthesis reaction Methods 0.000 description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 239000007787 solid Substances 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 238000005227 gel permeation chromatography Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 229910052731 fluorine Inorganic materials 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000002585 base Substances 0.000 description 10
- 238000001459 lithography Methods 0.000 description 10
- YCLSOMLVSHPPFV-UHFFFAOYSA-N 3-(2-carboxyethyldisulfanyl)propanoic acid Chemical compound OC(=O)CCSSCCC(O)=O YCLSOMLVSHPPFV-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 9
- XGQJGMGAMHFMAO-UHFFFAOYSA-N 1,3,4,6-tetrakis(methoxymethyl)-3a,6a-dihydroimidazo[4,5-d]imidazole-2,5-dione Chemical compound COCN1C(=O)N(COC)C2C1N(COC)C(=O)N2COC XGQJGMGAMHFMAO-UHFFFAOYSA-N 0.000 description 8
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 8
- 125000001153 fluoro group Chemical group F* 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 125000001424 substituent group Chemical group 0.000 description 7
- 239000004698 Polyethylene Substances 0.000 description 6
- 239000004793 Polystyrene Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 6
- 125000004185 ester group Chemical group 0.000 description 6
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 6
- 125000001046 glycoluril group Chemical class [H]C12N(*)C(=O)N(*)C1([H])N(*)C(=O)N2* 0.000 description 6
- 229920000573 polyethylene Polymers 0.000 description 6
- 229920002223 polystyrene Polymers 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000003513 alkali Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 125000001033 ether group Chemical group 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- JHRWWRDRBPCWTF-OLQVQODUSA-N captafol Chemical class C1C=CC[C@H]2C(=O)N(SC(Cl)(Cl)C(Cl)Cl)C(=O)[C@H]21 JHRWWRDRBPCWTF-OLQVQODUSA-N 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- ZDYVRSLAEXCVBX-UHFFFAOYSA-N pyridinium p-toluenesulfonate Chemical compound C1=CC=[NH+]C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 ZDYVRSLAEXCVBX-UHFFFAOYSA-N 0.000 description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 4
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 description 4
- RKHXQBLJXBGEKF-UHFFFAOYSA-M tetrabutylphosphanium;bromide Chemical compound [Br-].CCCC[P+](CCCC)(CCCC)CCCC RKHXQBLJXBGEKF-UHFFFAOYSA-M 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- YCPXWRQRBFJBPZ-UHFFFAOYSA-N 5-sulfosalicylic acid Chemical compound OC(=O)C1=CC(S(O)(=O)=O)=CC=C1O YCPXWRQRBFJBPZ-UHFFFAOYSA-N 0.000 description 3
- 239000005711 Benzoic acid Substances 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 235000010233 benzoic acid Nutrition 0.000 description 3
- 150000001721 carbon Chemical group 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229940116333 ethyl lactate Drugs 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 3
- 150000002596 lactones Chemical group 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 125000005647 linker group Chemical group 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 3
- 229940044654 phenolsulfonic acid Drugs 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000001226 reprecipitation Methods 0.000 description 3
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 3
- YUOCJTKDRNYTFJ-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)ON1C(=O)CCC1=O YUOCJTKDRNYTFJ-UHFFFAOYSA-N 0.000 description 2
- OKRLWHAZMUFONP-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) trifluoromethanesulfonate Chemical compound FC(F)(F)S(=O)(=O)ON1C(=O)CCC1=O OKRLWHAZMUFONP-UHFFFAOYSA-N 0.000 description 2
- HHYVKZVPYXHHCG-UHFFFAOYSA-M (7,7-dimethyl-3-oxo-4-bicyclo[2.2.1]heptanyl)methanesulfonate;diphenyliodanium Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1.C1CC2(CS([O-])(=O)=O)C(=O)CC1C2(C)C HHYVKZVPYXHHCG-UHFFFAOYSA-M 0.000 description 2
- FJALTVCJBKZXKY-UHFFFAOYSA-M (7,7-dimethyl-3-oxo-4-bicyclo[2.2.1]heptanyl)methanesulfonate;triphenylsulfanium Chemical compound C1CC2(CS([O-])(=O)=O)C(=O)CC1C2(C)C.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FJALTVCJBKZXKY-UHFFFAOYSA-M 0.000 description 2
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 2
- VLLPVDKADBYKLM-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate;triphenylsulfanium Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 VLLPVDKADBYKLM-UHFFFAOYSA-M 0.000 description 2
- WFCOXVISFBRIKN-UHFFFAOYSA-N 1,3-bis(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)NC(=O)N1CC1CO1 WFCOXVISFBRIKN-UHFFFAOYSA-N 0.000 description 2
- DPOPGHCRRJYPMP-UHFFFAOYSA-N 1-[diazo(methylsulfonyl)methyl]sulfonyl-4-methylbenzene Chemical compound CC1=CC=C(S(=O)(=O)C(=[N+]=[N-])S(C)(=O)=O)C=C1 DPOPGHCRRJYPMP-UHFFFAOYSA-N 0.000 description 2
- GYQQFWWMZYBCIB-UHFFFAOYSA-N 1-[diazo-(4-methylphenyl)sulfonylmethyl]sulfonyl-4-methylbenzene Chemical compound C1=CC(C)=CC=C1S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1=CC=C(C)C=C1 GYQQFWWMZYBCIB-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 125000004975 3-butenyl group Chemical group C(CC=C)* 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- RJWBTWIBUIGANW-UHFFFAOYSA-N 4-chlorobenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=C(Cl)C=C1 RJWBTWIBUIGANW-UHFFFAOYSA-N 0.000 description 2
- AHKHCABWJGFHOG-UHFFFAOYSA-N 4-hydroxybenzenesulfonate pyridin-1-ium Chemical compound c1cc[nH+]cc1.Oc1ccc(cc1)S([O-])(=O)=O AHKHCABWJGFHOG-UHFFFAOYSA-N 0.000 description 2
- FEPBITJSIHRMRT-UHFFFAOYSA-N 4-hydroxybenzenesulfonic acid Chemical compound OC1=CC=C(S(O)(=O)=O)C=C1 FEPBITJSIHRMRT-UHFFFAOYSA-N 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-M 4-hydroxybenzoate Chemical compound OC1=CC=C(C([O-])=O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-M 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 2
- YXHKONLOYHBTNS-UHFFFAOYSA-N Diazomethane Chemical compound C=[N+]=[N-] YXHKONLOYHBTNS-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 229920001214 Polysorbate 60 Polymers 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- 239000004147 Sorbitan trioleate Substances 0.000 description 2
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- QFKJMDYQKVPGNM-UHFFFAOYSA-N [benzenesulfonyl(diazo)methyl]sulfonylbenzene Chemical compound C=1C=CC=CC=1S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1=CC=CC=C1 QFKJMDYQKVPGNM-UHFFFAOYSA-N 0.000 description 2
- GLGXSTXZLFQYKJ-UHFFFAOYSA-N [cyclohexylsulfonyl(diazo)methyl]sulfonylcyclohexane Chemical compound C1CCCCC1S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1CCCCC1 GLGXSTXZLFQYKJ-UHFFFAOYSA-N 0.000 description 2
- FDTRPMUFAMGRNM-UHFFFAOYSA-N [diazo(trifluoromethylsulfonyl)methyl]sulfonyl-trifluoromethane Chemical compound FC(F)(F)S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C(F)(F)F FDTRPMUFAMGRNM-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 125000000732 arylene group Chemical group 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229960002319 barbital Drugs 0.000 description 2
- FTOAOBMCPZCFFF-UHFFFAOYSA-N barbitone sodium Natural products CCC1(CC)C(=O)NC(=O)NC1=O FTOAOBMCPZCFFF-UHFFFAOYSA-N 0.000 description 2
- MIAUJDCQDVWHEV-UHFFFAOYSA-N benzene-1,2-disulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1S(O)(=O)=O MIAUJDCQDVWHEV-UHFFFAOYSA-N 0.000 description 2
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical compound C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- MDUKBVGQQFOMPC-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;(7,7-dimethyl-3-oxo-4-bicyclo[2.2.1]heptanyl)methanesulfonate Chemical compound C1CC2(CS([O-])(=O)=O)C(=O)CC1C2(C)C.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 MDUKBVGQQFOMPC-UHFFFAOYSA-M 0.000 description 2
- VGZKCAUAQHHGDK-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 VGZKCAUAQHHGDK-UHFFFAOYSA-M 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 125000000753 cycloalkyl group Chemical group 0.000 description 2
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- GGSUCNLOZRCGPQ-UHFFFAOYSA-N diethylaniline Chemical compound CCN(CC)C1=CC=CC=C1 GGSUCNLOZRCGPQ-UHFFFAOYSA-N 0.000 description 2
- OZLBDYMWFAHSOQ-UHFFFAOYSA-N diphenyliodanium Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1 OZLBDYMWFAHSOQ-UHFFFAOYSA-N 0.000 description 2
- ORPDKMPYOLFUBA-UHFFFAOYSA-M diphenyliodanium;1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1.[O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ORPDKMPYOLFUBA-UHFFFAOYSA-M 0.000 description 2
- SBQIJPBUMNWUKN-UHFFFAOYSA-M diphenyliodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C=1C=CC=CC=1[I+]C1=CC=CC=C1 SBQIJPBUMNWUKN-UHFFFAOYSA-M 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 125000004043 oxo group Chemical group O=* 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 2
- YFSUTJLHUFNCNZ-UHFFFAOYSA-N perfluorooctane-1-sulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YFSUTJLHUFNCNZ-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- YWVYZMVYXAVAKS-UHFFFAOYSA-N pyridin-1-ium;trifluoromethanesulfonate Chemical compound C1=CC=[NH+]C=C1.[O-]S(=O)(=O)C(F)(F)F YWVYZMVYXAVAKS-UHFFFAOYSA-N 0.000 description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 229960004889 salicylic acid Drugs 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 235000019337 sorbitan trioleate Nutrition 0.000 description 2
- 229960000391 sorbitan trioleate Drugs 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229960002317 succinimide Drugs 0.000 description 2
- VJIAQJAACYACCX-UHFFFAOYSA-M sulfanium trifluoromethanesulfonate triphenylsulfanium Chemical class FC(S(=O)(=O)[O-])(F)F.[SH3+].C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.FC(S(=O)(=O)[O-])(F)F VJIAQJAACYACCX-UHFFFAOYSA-M 0.000 description 2
- 150000003460 sulfonic acids Chemical class 0.000 description 2
- 125000004434 sulfur atom Chemical group 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 2
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- 125000006079 1,1,2-trimethyl-2-propenyl group Chemical group 0.000 description 1
- MCEKOERWHIKDFW-UHFFFAOYSA-N 1,1,3,3-tetrakis(butoxymethyl)urea Chemical compound CCCCOCN(COCCCC)C(=O)N(COCCCC)COCCCC MCEKOERWHIKDFW-UHFFFAOYSA-N 0.000 description 1
- GQNTZAWVZSKJKE-UHFFFAOYSA-N 1,1,3,3-tetrakis(methoxymethyl)urea Chemical compound COCN(COC)C(=O)N(COC)COC GQNTZAWVZSKJKE-UHFFFAOYSA-N 0.000 description 1
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
- 125000006059 1,1-dimethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006033 1,1-dimethyl-2-propenyl group Chemical group 0.000 description 1
- 125000006060 1,1-dimethyl-3-butenyl group Chemical group 0.000 description 1
- 125000006061 1,2-dimethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006034 1,2-dimethyl-1-propenyl group Chemical group 0.000 description 1
- 125000006062 1,2-dimethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006035 1,2-dimethyl-2-propenyl group Chemical group 0.000 description 1
- 125000006063 1,2-dimethyl-3-butenyl group Chemical group 0.000 description 1
- 125000006064 1,3-dimethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006065 1,3-dimethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006066 1,3-dimethyl-3-butenyl group Chemical group 0.000 description 1
- 125000004973 1-butenyl group Chemical group C(=CCC)* 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- 125000006433 1-ethyl cyclopropyl group Chemical group [H]C([H])([H])C([H])([H])C1(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000006073 1-ethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006074 1-ethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006081 1-ethyl-2-methyl-1-propenyl group Chemical group 0.000 description 1
- 125000006082 1-ethyl-2-methyl-2-propenyl group Chemical group 0.000 description 1
- 125000006075 1-ethyl-3-butenyl group Chemical group 0.000 description 1
- 125000006039 1-hexenyl group Chemical group 0.000 description 1
- 125000006438 1-i-propyl cyclopropyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C1(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000006432 1-methyl cyclopropyl group Chemical group [H]C([H])([H])C1(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000006025 1-methyl-1-butenyl group Chemical group 0.000 description 1
- 125000006044 1-methyl-1-pentenyl group Chemical group 0.000 description 1
- 125000006019 1-methyl-1-propenyl group Chemical group 0.000 description 1
- 125000006028 1-methyl-2-butenyl group Chemical group 0.000 description 1
- 125000006048 1-methyl-2-pentenyl group Chemical group 0.000 description 1
- 125000006021 1-methyl-2-propenyl group Chemical group 0.000 description 1
- 125000006030 1-methyl-3-butenyl group Chemical group 0.000 description 1
- 125000006052 1-methyl-3-pentenyl group Chemical group 0.000 description 1
- 125000006055 1-methyl-4-pentenyl group Chemical group 0.000 description 1
- 125000006439 1-n-propyl cyclopropyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C1(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000006023 1-pentenyl group Chemical group 0.000 description 1
- 125000006017 1-propenyl group Chemical group 0.000 description 1
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 description 1
- 125000006067 2,2-dimethyl-3-butenyl group Chemical group 0.000 description 1
- 125000006068 2,3-dimethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006069 2,3-dimethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006070 2,3-dimethyl-3-butenyl group Chemical group 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- DIZBQMTZXOUFTD-UHFFFAOYSA-N 2-(furan-2-yl)-3h-benzimidazole-5-carboxylic acid Chemical compound N1C2=CC(C(=O)O)=CC=C2N=C1C1=CC=CO1 DIZBQMTZXOUFTD-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 125000004974 2-butenyl group Chemical group C(C=CC)* 0.000 description 1
- 125000004182 2-chlorophenyl group Chemical group [H]C1=C([H])C(Cl)=C(*)C([H])=C1[H] 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- 125000006076 2-ethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006077 2-ethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006078 2-ethyl-3-butenyl group Chemical group 0.000 description 1
- 125000004198 2-fluorophenyl group Chemical group [H]C1=C([H])C(F)=C(*)C([H])=C1[H] 0.000 description 1
- 125000006040 2-hexenyl group Chemical group 0.000 description 1
- AXZKCQSGDARVRL-UHFFFAOYSA-N 2-hydroxy-5-methylbenzenesulfonic acid Chemical compound CC1=CC=C(O)C(S(O)(=O)=O)=C1 AXZKCQSGDARVRL-UHFFFAOYSA-N 0.000 description 1
- HXDLWJWIAHWIKI-UHFFFAOYSA-N 2-hydroxyethyl acetate Chemical compound CC(=O)OCCO HXDLWJWIAHWIKI-UHFFFAOYSA-N 0.000 description 1
- 125000006026 2-methyl-1-butenyl group Chemical group 0.000 description 1
- 125000006045 2-methyl-1-pentenyl group Chemical group 0.000 description 1
- 125000006020 2-methyl-1-propenyl group Chemical group 0.000 description 1
- 125000006029 2-methyl-2-butenyl group Chemical group 0.000 description 1
- 125000006049 2-methyl-2-pentenyl group Chemical group 0.000 description 1
- 125000006022 2-methyl-2-propenyl group Chemical group 0.000 description 1
- 125000006031 2-methyl-3-butenyl group Chemical group 0.000 description 1
- 125000006053 2-methyl-3-pentenyl group Chemical group 0.000 description 1
- 125000006056 2-methyl-4-pentenyl group Chemical group 0.000 description 1
- BNCADMBVWNPPIZ-UHFFFAOYSA-N 2-n,2-n,4-n,4-n,6-n,6-n-hexakis(methoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound COCN(COC)C1=NC(N(COC)COC)=NC(N(COC)COC)=N1 BNCADMBVWNPPIZ-UHFFFAOYSA-N 0.000 description 1
- 125000006024 2-pentenyl group Chemical group 0.000 description 1
- 125000006071 3,3-dimethyl-1-butenyl group Chemical group 0.000 description 1
- 125000004179 3-chlorophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C(Cl)=C1[H] 0.000 description 1
- 125000006041 3-hexenyl group Chemical group 0.000 description 1
- 125000006027 3-methyl-1-butenyl group Chemical group 0.000 description 1
- 125000006046 3-methyl-1-pentenyl group Chemical group 0.000 description 1
- 125000006050 3-methyl-2-pentenyl group Chemical group 0.000 description 1
- 125000006032 3-methyl-3-butenyl group Chemical group 0.000 description 1
- 125000006054 3-methyl-3-pentenyl group Chemical group 0.000 description 1
- 125000006057 3-methyl-4-pentenyl group Chemical group 0.000 description 1
- YDIYEOMDOWUDTJ-UHFFFAOYSA-N 4-(dimethylamino)benzoic acid Chemical compound CN(C)C1=CC=C(C(O)=O)C=C1 YDIYEOMDOWUDTJ-UHFFFAOYSA-N 0.000 description 1
- 125000001255 4-fluorophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C([H])=C1F 0.000 description 1
- 125000006042 4-hexenyl group Chemical group 0.000 description 1
- YCOXCINCKKAZMJ-UHFFFAOYSA-N 4-hydroxy-3-methylbenzenesulfonic acid Chemical compound CC1=CC(S(O)(=O)=O)=CC=C1O YCOXCINCKKAZMJ-UHFFFAOYSA-N 0.000 description 1
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 description 1
- 125000006047 4-methyl-1-pentenyl group Chemical group 0.000 description 1
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 1
- 125000006051 4-methyl-2-pentenyl group Chemical group 0.000 description 1
- 125000003119 4-methyl-3-pentenyl group Chemical group [H]\C(=C(/C([H])([H])[H])C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000006058 4-methyl-4-pentenyl group Chemical group 0.000 description 1
- 125000000590 4-methylphenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- 125000006043 5-hexenyl group Chemical group 0.000 description 1
- RNMDNPCBIKJCQP-UHFFFAOYSA-N 5-nonyl-7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-ol Chemical compound C(CCCCCCCC)C1=C2C(=C(C=C1)O)O2 RNMDNPCBIKJCQP-UHFFFAOYSA-N 0.000 description 1
- XZIIFPSPUDAGJM-UHFFFAOYSA-N 6-chloro-2-n,2-n-diethylpyrimidine-2,4-diamine Chemical compound CCN(CC)C1=NC(N)=CC(Cl)=N1 XZIIFPSPUDAGJM-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- XYVQFUJDGOBPQI-UHFFFAOYSA-N Methyl-2-hydoxyisobutyric acid Chemical compound COC(=O)C(C)(C)O XYVQFUJDGOBPQI-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- IYFATESGLOUGBX-YVNJGZBMSA-N Sorbitan monopalmitate Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O IYFATESGLOUGBX-YVNJGZBMSA-N 0.000 description 1
- HVUMOYIDDBPOLL-XWVZOOPGSA-N Sorbitan monostearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O HVUMOYIDDBPOLL-XWVZOOPGSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- IJCWFDPJFXGQBN-RYNSOKOISA-N [(2R)-2-[(2R,3R,4S)-4-hydroxy-3-octadecanoyloxyoxolan-2-yl]-2-octadecanoyloxyethyl] octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCCCCCCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCCCCCCCCCCCC IJCWFDPJFXGQBN-RYNSOKOISA-N 0.000 description 1
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 1
- 125000000641 acridinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 description 1
- JIMXXGFJRDUSRO-UHFFFAOYSA-N adamantane-1-carboxylic acid Chemical compound C1C(C2)CC3CC2CC1(C(=O)O)C3 JIMXXGFJRDUSRO-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- BWLBGMIXKSTLSX-UHFFFAOYSA-N alpha-hydroxy-alpha-methylpropanoic acid Natural products CC(C)(O)C(O)=O BWLBGMIXKSTLSX-UHFFFAOYSA-N 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 150000001449 anionic compounds Chemical class 0.000 description 1
- 125000002078 anthracen-1-yl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C([*])=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 125000000748 anthracen-2-yl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C([H])=C([*])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000005160 aryl oxy alkyl group Chemical group 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 125000005587 carbonate group Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 125000004230 chromenyl group Chemical group O1C(C=CC2=CC=CC=C12)* 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 125000006165 cyclic alkyl group Chemical group 0.000 description 1
- 150000005676 cyclic carbonates Chemical group 0.000 description 1
- CGZZMOTZOONQIA-UHFFFAOYSA-N cycloheptanone Chemical compound O=C1CCCCCC1 CGZZMOTZOONQIA-UHFFFAOYSA-N 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CKSRFHWWBKRUKA-UHFFFAOYSA-N ethyl 2-ethoxyacetate Chemical compound CCOCC(=O)OCC CKSRFHWWBKRUKA-UHFFFAOYSA-N 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- IJUHLFUALMUWOM-UHFFFAOYSA-N ethyl 3-methoxypropanoate Chemical compound CCOC(=O)CCOC IJUHLFUALMUWOM-UHFFFAOYSA-N 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 125000004216 fluoromethyl group Chemical group [H]C([H])(F)* 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical compound N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 125000001041 indolyl group Chemical group 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910001412 inorganic anion Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- SKTCDJAMAYNROS-UHFFFAOYSA-N methoxycyclopentane Chemical compound COC1CCCC1 SKTCDJAMAYNROS-UHFFFAOYSA-N 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000002757 morpholinyl group Chemical group 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- 125000001298 n-hexoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- QUBQYFYWUJJAAK-UHFFFAOYSA-N oxymethurea Chemical compound OCNC(=O)NCO QUBQYFYWUJJAAK-UHFFFAOYSA-N 0.000 description 1
- 125000003854 p-chlorophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C([H])=C1Cl 0.000 description 1
- 125000000636 p-nitrophenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)[N+]([O-])=O 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 125000002081 peroxide group Chemical group 0.000 description 1
- 125000001791 phenazinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3N=C12)* 0.000 description 1
- 125000001484 phenothiazinyl group Chemical group C1(=CC=CC=2SC3=CC=CC=C3NC12)* 0.000 description 1
- 125000001644 phenoxazinyl group Chemical group C1(=CC=CC=2OC3=CC=CC=C3NC12)* 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000004193 piperazinyl group Chemical group 0.000 description 1
- 125000003386 piperidinyl group Chemical group 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 239000000249 polyoxyethylene sorbitan monopalmitate Substances 0.000 description 1
- 235000010483 polyoxyethylene sorbitan monopalmitate Nutrition 0.000 description 1
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 1
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 239000001816 polyoxyethylene sorbitan tristearate Substances 0.000 description 1
- 235000010988 polyoxyethylene sorbitan tristearate Nutrition 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 125000001844 prenyl group Chemical group [H]C([*])([H])C([H])=C(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000006239 protecting group Chemical group 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 125000000561 purinyl group Chemical group N1=C(N=C2N=CNC2=C1)* 0.000 description 1
- 125000004309 pyranyl group Chemical group O1C(C=CC=C1)* 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000000719 pyrrolidinyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 125000004621 quinuclidinyl group Chemical group N12C(CC(CC1)CC2)* 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 229940035044 sorbitan monolaurate Drugs 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 235000011069 sorbitan monooleate Nutrition 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 239000001570 sorbitan monopalmitate Substances 0.000 description 1
- 235000011071 sorbitan monopalmitate Nutrition 0.000 description 1
- 229940031953 sorbitan monopalmitate Drugs 0.000 description 1
- 239000001587 sorbitan monostearate Substances 0.000 description 1
- 235000011076 sorbitan monostearate Nutrition 0.000 description 1
- 229940035048 sorbitan monostearate Drugs 0.000 description 1
- 239000001589 sorbitan tristearate Substances 0.000 description 1
- 235000011078 sorbitan tristearate Nutrition 0.000 description 1
- 229960004129 sorbitan tristearate Drugs 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 125000005156 substituted alkylene group Chemical group 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 125000001174 sulfone group Chemical group 0.000 description 1
- 150000008053 sultones Chemical group 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- BJQWBACJIAKDTJ-UHFFFAOYSA-N tetrabutylphosphanium Chemical compound CCCC[P+](CCCC)(CCCC)CCCC BJQWBACJIAKDTJ-UHFFFAOYSA-N 0.000 description 1
- 125000004627 thianthrenyl group Chemical group C1(=CC=CC=2SC3=CC=CC=C3SC12)* 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 125000001834 xanthenyl group Chemical group C1=CC=CC=2OC3=CC=CC=C3C(C12)* 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/14—Polycondensates modified by chemical after-treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/14—Polycondensates modified by chemical after-treatment
- C08G59/1433—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
- C08G59/1483—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/26—Di-epoxy compounds heterocyclic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Definitions
- the present invention relates to compositions used in lithographic processes in semiconductor manufacturing, particularly in cutting-edge (ArF, EUV, EB, etc.) lithographic processes.
- the present invention also relates to a method of manufacturing a substrate with a resist pattern to which the resist underlayer film is applied, and a method of manufacturing a semiconductor device.
- microfabrication by lithography using a resist composition has been performed in the manufacture of semiconductor devices.
- a thin film of a photoresist composition is formed on a semiconductor substrate such as a silicon wafer, exposed to actinic rays such as ultraviolet rays through a mask pattern on which a device pattern is drawn, and developed.
- actinic rays such as ultraviolet rays
- This is a processing method in which the substrate is etched using the obtained photoresist pattern as a protective film to form fine unevenness corresponding to the pattern on the substrate surface.
- Patent Document 1 discloses a composition for forming a resist underlayer film for EUV lithography containing a condensation polymer.
- Patent Document 2 discloses a composition for forming a resist underlayer film containing an alicyclic compound-terminated polymer.
- Properties required for the resist underlayer film include, for example, no intermixing with the resist film formed on the upper layer (insolubility in the resist solvent), and a faster dry etching rate than the resist film. mentioned.
- the line width of the formed resist pattern is 32 nm or less, and the resist underlayer film for EUV exposure is formed thinner than before.
- it is difficult to form a defect-free uniform film because pinholes and aggregation are likely to occur due to the influence of the substrate surface, the polymer used, and the like.
- a solvent capable of dissolving the resist film usually an organic solvent, is used to remove the unexposed portion of the resist film, leaving the exposed portion of the resist film as a resist pattern.
- improvement of the adhesion of the resist pattern is a major issue.
- An object of the present invention is to provide a composition for forming a resist underlayer film capable of forming a desired resist pattern, and a method for forming a resist pattern using the resist underlayer film-forming composition, which solves the above problems. .
- the present invention includes the following.
- a resist underlayer film-forming composition comprising a polymer carrying an acid compound at its end and a solvent.
- the terminal is represented by the following formula (I): (In formula (I), A 1 represents an acid compound, B represents a basic structure, and * is a binding site with a polymer residue), according to [1] or [2].
- a composition for forming a resist underlayer film (In formula (I), A 1 represents an acid compound, B represents a basic structure, and * is a binding site with a polymer residue), according to [1] or [2].
- the B is R 1 R 2 R 3 N;
- R 1 and R 2 each independently represent an optionally substituted linear or branched saturated or unsaturated aliphatic hydrocarbon group, R 1 and R 2 may form a ring with or without a heteroatom,
- R 3 represents an optionally substituted aromatic group or an optionally substituted linear or branched saturated or unsaturated aliphatic hydrocarbon group, when R 1 and R 2 do not form a ring, R 3 is an optionally substituted aromatic group,
- the composition for forming a resist underlayer film according to [3] or [4].
- the B is [In the formula, R 1 and R 2 each independently represent an optionally substituted linear or branched saturated or unsaturated aliphatic hydrocarbon group, R3 represents an optionally substituted aromatic group. ], or the following formula (II) [in the formula (II), R is a hydrogen atom, a nitro group, a cyano group, an amino group, a carboxyl group, a halogen atom, an alkoxy group having 1 to 10 carbon atoms, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and a carbon number an aryl group of 6 to 40, an organic group containing an ether bond, an organic group containing a ketone bond, an organic group containing an ester bond, or a combination thereof; R' is and R a and R b each independently represent optionally substituted alkyl; X is O, S, or SO2 ; n and m are each independently 2, 3, 4, 5, or 6
- R 3 represents an optionally substituted phenyl, naphthyl, anthracenyl, or phenanthrenyl group
- the above R is a hydrogen atom, a methyl group, an ethyl group, an allyl group, or a cyanomethyl group
- the above R' is The composition for forming a resist underlayer film according to [6], which is a base represented by
- a 1 is the following formula (In formula (III), A is an optionally substituted linear, branched, or cyclic saturated or unsaturated aliphatic hydrocarbon group, an aryl group optionally substituted by a group other than a carboxyl group , or an optionally substituted heteroaryl group).
- the polymer has the following formula (1): [Wherein, A 1 , A 2 , A 3 , A 4 , A 5 and A 6 each represent a hydrogen atom, a methyl group or an ethyl group; Formula (4) or Formula (0): (wherein R 1 and R 2 each represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, a benzyl group or a phenyl group; Alkyl groups having 1 to 6 carbon atoms, alkenyl groups having 3 to 6 carbon atoms, benzyl groups and phenyl groups are alkyl groups having 1 to 6 carbon atoms, halogen atoms, alkoxy groups having 1 to 6 carbon atoms, and nitro groups.
- R 1 and R 2 are bonded to each other to form a group having 3 carbon atoms.
- R 3 represents a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, a benzyl group or a phenyl group, and the phenyl The group is selected from the group consisting of an alkyl group having 1 to 6 carbon atoms, a halogen atom, an alkoxy group having 1 to 6 carbon atoms, a nitro group, a cyano group, a hydroxy group, and an alkylthio group having 1 to 6 carbon atoms.
- Q is formula (5) or formula (6): (In the formula, Q 1 represents an alkylene group, phenylene group, naphthylene group, or anthrylene group having 1 to 10 carbon atoms, and the alkylene group, phenylene group, naphthylene group, and anthrylene group each have a number of carbon atoms.
- 1-6 alkyl group, carbonyloxyalkyl group with 2-7 carbon atoms, halogen atom, alkoxy group with 1-6 carbon atoms, phenyl group, nitro group, cyano group, hydroxy group, 1-6 carbon atoms may be substituted with an alkylthio group, a group having a disulfide group, a carboxyl group, or a group consisting of a combination thereof, the alkylene group may be interrupted by a disulfide bond, n 1 and n 2 are each 0 or represents the number of 1, and X 2 represents formula (2), formula (3), or formula (0)] is a polymer having a repeating unit structure represented by [1] to [8 ] The composition for forming a resist underlayer film according to any one of ].
- a resist underlayer film characterized by being a baked product of a coating film comprising the resist underlayer film-forming composition according to [1] to [11].
- a step of forming a resist underlayer film comprising the resist underlayer film-forming composition according to any one of [1] to [11] on a semiconductor substrate; forming a resist film on the resist underlayer film; a step of forming a resist pattern by irradiating the resist film with light or an electron beam and then developing; forming a patterned resist underlayer film by etching the resist underlayer film through the formed resist pattern; a step of processing a semiconductor substrate with the patterned resist underlayer film;
- a method of manufacturing a semiconductor device comprising:
- the composition for forming a resist underlayer film of the present invention has excellent applicability to a semiconductor substrate to be processed, and has excellent adhesion at the interface between the resist and the resist underlayer film when forming a resist pattern.
- a good rectangular resist pattern can be formed without the occurrence of Especially when EUV (wavelength 13.5 nm) or EB (electron beam) is used, a remarkable effect is exhibited.
- the resist underlayer film-forming composition of the present invention contains a polymer carrying an acid compound at its end and a solvent.
- the acid compound of the present invention is not limited as long as it exhibits the effects of the present invention, but both thermal acid generators and photoacid generators can be used.
- Thermal acid generators include p-toluenesulfonic acid, trifluoromethanesulfonic acid, pyridinium-p-toluenesulfonate (pyridinium-p-toluenesulfonic acid), pyridinium phenolsulfonic acid, pyridinium-p-hydroxybenzenesulfonic acid (p- phenolsulfonic acid pyridinium salt), pyridinium-trifluoromethanesulfonic acid, salicylic acid, camphorsulfonic acid, 5-sulfosalicylic acid, 4-chlorobenzenesulfonic acid, 4-hydroxybenzenesulfonic acid, benzenedisulfonic acid, 1-naphthalenesulfonic acid, citric acid , benzoic
- Examples of the photoacid generator include onium salt compounds, sulfonimide compounds, and disulfonyldiazomethane compounds.
- Onium salt compounds include diphenyliodonium hexafluorophosphate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoro-normal butanesulfonate, diphenyliodonium perfluoro-normal octane sulfonate, diphenyliodonium camphorsulfonate, and bis(4-tert-butylphenyl)iodonium camphorsulfonate.
- iodonium salt compounds such as bis(4-tert-butylphenyl)iodonium trifluoromethanesulfonate, and triphenylsulfonium hexafluoroantimonate, triphenylsulfonium nonafluoro-normal butanesulfonate, triphenylsulfonium camphorsulfonate and triphenylsulfonium trifluoromethanesulfonate sulfonium salt compounds such as
- sulfonimide compounds include N-(trifluoromethanesulfonyloxy)succinimide, N-(nonafluoro-normalbutanesulfonyloxy)succinimide, N-(camphorsulfonyloxy)succinimide and N-(trifluoromethanesulfonyloxy)naphthalimide. mentioned.
- disulfonyldiazomethane compounds include bis(trifluoromethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane, bis(p-toluenesulfonyl)diazomethane, and bis(2,4-dimethylbenzenesulfonyl). ) diazomethane, and methylsulfonyl-p-toluenesulfonyl diazomethane.
- the acid compound can be used alone or in combination of two or more.
- the method for supporting the acid compound on the polymer is not limited, but as in the method described in the Examples, the acid compound is added to a polymer solution having a terminal structure capable of supporting an acid, and the acid compound is added and stirred. can be made
- the proportion (mol%) of the acid compound supported on the polymer terminal can be indirectly calculated from the amount of the acid compound removed during polymer purification by the production method described in the Examples. % or more, 70 mol % or more, 90 mol % or more, and preferably 98 mol % or more of the acid compound is supported at the terminal of the polymer.
- the acid compound also has the role of promoting the cross-linking reaction of the polymer with the cross-linking agent described below.
- the acid compound may ionically bond with the base present at the end of the polymer.
- the terminal is represented by the following formula (I): (In formula ( I ), A1 represents an acid compound, B represents a basic structure, and * is a binding portion with a polymer residue).
- the B may contain a nitrogen atom.
- R 1 R 2 R 3 N each independently represent an optionally substituted linear or branched saturated or unsaturated aliphatic hydrocarbon group, R 1 and R 2 may form a ring with or without a heteroatom, R 3 represents an optionally substituted aromatic group or an optionally substituted linear or branched saturated or unsaturated aliphatic hydrocarbon group, When R 1 and R 2 do not form a ring, R 3 may be an optionally substituted aromatic group.
- R 1 and R 2 each independently represent an optionally substituted linear or branched saturated or unsaturated aliphatic hydrocarbon group, R3 represents an optionally substituted aromatic group.
- R is a hydrogen atom, a nitro group, a cyano group, an amino group, a carboxyl group, a halogen atom, an alkoxy group having 1 to 10 carbon atoms, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and a carbon number an aryl group of 6 to 40, an organic group containing an ether bond, an organic group containing a ketone bond, an organic group containing an ester bond, or a combination thereof; R' is and R a and R b each independently represent optionally substituted alkyl; X is O, S, or SO2 ; n and m are each independently 2, 3, 4, 5, or 6; ]
- R 3 represents an optionally substituted phenyl, naphthyl, anthracenyl, or phenanthrenyl group
- the above R is a hydrogen atom, a methyl group, an ethyl group, an allyl group, or a cyanomethyl group
- the above R' is It may be a base represented by
- a 1 is the following formula (In formula (III), A is an optionally substituted linear, branched, or cyclic saturated or unsaturated aliphatic hydrocarbon group, an aryl group optionally substituted by a group other than a carboxyl group , or an optionally substituted heteroaryl group).
- linear, branched or cyclic saturated aliphatic hydrocarbon groups include methyl group, ethyl group, n-propyl group, i-propyl group, cyclopropyl group, n-butyl group, i-butyl group, s-butyl group, t-butyl group, cyclobutyl group, 1-methyl-cyclopropyl group, 2-methyl-cyclopropyl group, n-pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n- propyl group, cyclopentyl group, 1-methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3-methyl-cyclobutyl group, 1,2-dimethyl-cyclopropyl
- Linear, branched or cyclic unsaturated aliphatic hydrocarbon groups include ethenyl, 1-propenyl, 2-propenyl, 1-methyl-1-ethenyl, 1-butenyl and 2-butenyl. group, 3-butenyl group, 2-methyl-1-propenyl group, 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl-1-propenyl group, 1-methyl-2-propenyl group, 1- pentenyl group, 2-pentenyl group, 3-pentenyl group, 4-pentenyl group, 1-n-propylethenyl group, 1-methyl-1-butenyl group, 1-methyl-2-butenyl group, 1-methyl-3 -butenyl group, 2-ethyl-2-propenyl group, 2-methyl-1-butenyl group, 2-methyl-2-butenyl group, 2-methyl-3-butenyl group, 3-methyl-1-butenyl group, 3 -methyl-2-butenyl
- aryl group examples include a phenyl group, o-methylphenyl group, m-methylphenyl group, p-methylphenyl group, o-chlorophenyl group, m-chlorophenyl group, p-chlorophenyl group, o-fluorophenyl group, p- fluorophenyl group, o-methoxyphenyl group, p-methoxyphenyl group, p-nitrophenyl group, p-cyanophenyl group, ⁇ -naphthyl group, ⁇ -naphthyl group, o-biphenylyl group, m-biphenylyl group, p- biphenylyl group, 1-anthryl group, 2-anthryl group, 9-anthryl group, 1-phenanthryl group, 2-phenanthryl group, 3-phenanthryl group, 4-phenanthryl group, 9-phenanthryl group and the like.
- heteroaryl groups include furanyl, thiophenyl, pyrrolyl, imidazolyl, pyranyl, pyridinyl, pyrimidinyl, pyrazinyl, pyrrolidinyl, piperidinyl, piperazinyl, morpholinyl, quinuclidinyl, indolyl, and purinyl.
- quinolinyl group isoquinolinyl group, chromenyl group, thianthrenyl group, phenothiazinyl group, phenoxazinyl group, xanthenyl group, acridinyl group, phenazinyl group, carbazolyl group and the like.
- Aryl groups and heteroaryl groups are included in aromatic groups.
- substituents include a nitro group, an amino group, a cyano group, a sulfo group, a hydroxy group, a carboxyl group, a halogen atom, an alkoxy group having 1 to 10 carbon atoms, an alkyl group having 1 to 10 carbon atoms, and an alkyl group having 1 to 10 carbon atoms.
- substituents include alkenyl groups having 2 to 10 carbon atoms, aryl groups having 6 to 40 carbon atoms, organic groups containing ether bonds, organic groups containing ketone bonds, organic groups containing ester bonds, or combinations thereof.
- the halogen atom includes a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
- alkoxy groups include methoxy, ethoxy, n-propoxy, i-propoxy, n-butoxy, i-butoxy, s-butoxy, t-butoxy, n-pentyloxy, 1- methyl-n-butoxy group, 2-methyl-n-butoxy group, 3-methyl-n-butoxy group, 1,1-dimethyl-n-propoxy group, 1,2-dimethyl-n-propoxy group, 2,2 -dimethyl-n-propoxy group, 1-ethyl-n-propoxy group, n-hexyloxy group, 1-methyl-n-pentyloxy group, 2-methyl-n-pentyloxy group, 3-methyl-n-pentyl oxy group, 4-methyl-n-pentyloxy group, 1,1-dimethyl-n-butoxy group, 1,2-dimethyl-n-butoxy group, 1,3-dimethyl-n-butoxy group, 2,2- dimethyl-n-butoxy group, 2,3-dimethyl-but
- alkyl group, alkenyl group, and aryl group are as exemplified above.
- An organic group containing an ether bond is R 11 —OR 11 (each R 11 independently represents an alkyl group having 1 to 6 carbon atoms such as methyl group or ethyl group, an alkylene group, a phenyl group or a phenylene group). Examples include organic groups containing ether bonds, including methoxy groups, ethoxy groups, and phenoxy groups.
- the organic group containing an ester bond is R 31 —C( ⁇ O)OR 31 (R 31 is independently an alkyl group having 1 to 6 carbon atoms such as a methyl group, an ethyl group, an alkylene group, a phenyl group, a phenylene group), and examples thereof include organic groups containing an ester bond such as methyl ester, ethyl ester, and phenyl ester.
- A does not include an aryl group substituted with a hydroxy group. Therefore, anions derived from p-phenolsulfonic acid, o-cresol-4-sulfonic acid, p-cresol-2-sulfonic acid and the like are not included in (A-SO 3 ) - in the present invention. Also preferably, A does not include aryl groups substituted by carboxyl groups. Therefore, anions derived from 5-sulfosalicylic acid and the like are not included in (A—SO 3 ) — in the present invention.
- A is preferably a methyl group, a fluoromethyl group, or a tolyl group.
- B examples include N-methylmorpholine, N,N-diethylaniline, and the like.
- the polymer contained in the resist underlayer film-forming composition of the present invention is not limited as long as it exhibits the effect of the present application, but the following formula (1) described in WO 2013/018802: [Wherein, A 1 , A 2 , A 3 , A 4 , A 5 and A 6 each represent a hydrogen atom, a methyl group or an ethyl group; Formula (4) or Formula (0): (wherein R 1 and R 2 each represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, a benzyl group or a phenyl group; Alkyl groups having 1 to 6 carbon atoms, alkenyl groups having 3 to 6 carbon atoms, benzyl groups and phenyl groups are alkyl groups having 1 to 6 carbon atoms, halogen atoms, alkoxy groups having 1 to 6 carbon atoms, and nitro groups.
- R 1 and R 2 are bonded to each other to form a group having 3 carbon atoms.
- R 3 represents a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, a benzyl group or a phenyl group, and the phenyl The group is selected from the group consisting of an alkyl group having 1 to 6 carbon atoms, a halogen atom, an alkoxy group having 1 to 6 carbon atoms, a nitro group, a cyano group, a hydroxy group, and an alkylthio group having 1 to 6 carbon atoms.
- Q is formula (5) or formula (6): (In the formula, Q 1 represents an alkylene group, phenylene group, naphthylene group, or anthrylene group having 1 to 10 carbon atoms, and the alkylene group, phenylene group, naphthylene group, and anthrylene group each have a number of carbon atoms.
- 1-6 alkyl group, carbonyloxyalkyl group with 2-7 carbon atoms, halogen atom, alkoxy group with 1-6 carbon atoms, phenyl group, nitro group, cyano group, hydroxy group, 1-6 carbon atoms may be substituted with an alkylthio group, a group having a disulfide group, a carboxyl group, or a group consisting of a combination thereof, the alkylene group may be interrupted by a disulfide bond, n 1 and n 2 are each 0 or 1, and X 2 represents formula (2), formula (3), or formula (0)].
- alkyl group examples include methyl group, ethyl group, propyl group, isopropyl group, normal butyl group and cyclohexyl group.
- alkenyl group examples include 2-propenyl group and 3-butenyl group.
- R 1 and R 2 may combine with each other to form a ring having 3 to 6 carbon atoms, and examples of such rings include cyclobutane ring, cyclopentane ring and cyclohexane ring.
- the alkoxy group includes a methoxy group, an ethoxy group, a propoxy group and an isopropoxy group.
- Examples of the group having the disulfide group include -SSR group and -RSRSR group.
- R represents the aforementioned alkyl group, alkylene group, aryl group and arylene group.
- repeating unit structure represented by formula (1) include repeating unit structures represented by formulas (13) to (32).
- R is an alcohol residue (an organic group other than the hydroxy group of alcohol), and this R represents an alkyl group, an ether group, or a combination thereof.
- R above include an alkyl group, an alkoxyalkyl group, and the like. Examples of the alkyl group and alkoxy group are given above.
- the lower limit of the weight average molecular weight of the polymer is, for example, 500, 1,000, 2,000, or 3,000, and the upper limit of the weight average molecular weight of the reaction product is, for example, 30,000, 20,000, or 10, 000.
- the solvent used in the composition for forming a resist underlayer film of the present application is not particularly limited as long as it can uniformly dissolve components such as the above-mentioned polymers that are solid at room temperature.
- organic solvents are preferred. Specifically, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl Ether acetate, propylene glycol propyl ether acetate, toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, cycloheptanone, 4-methyl-2-pentanol, methyl 2-
- propylene glycol monomethyl ether propylene glycol monomethyl ether acetate, ethyl lactate, butyl lactate, and cyclohexanone are preferred.
- Propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate are particularly preferred.
- the acid generator contained as an optional component in the resist underlayer film-forming composition of the present invention may further contain the same or different acid compound and acid generator in addition to the acid compound supported at the terminal of the polymer.
- Either a thermal acid generator or a photoacid generator can be used as the acid generator, but it is preferable to use a thermal acid generator.
- Thermal acid generators include, for example, p-toluenesulfonic acid, trifluoromethanesulfonic acid, pyridinium-p-toluenesulfonate (pyridinium-p-toluenesulfonic acid), pyridinium phenolsulfonic acid, pyridinium-p-hydroxybenzenesulfonic acid ( p-phenolsulfonic acid pyridinium salt), pyridinium-trifluoromethanesulfonic acid, salicylic acid, camphorsulfonic acid, 5-sulfosalicylic acid, 4-chlorobenzenesulfonic acid, 4-hydroxybenzenesulfonic acid, benzenedisulfonic acid, 1-naphthalenesulfonic acid, Sulfonic acid compounds and carboxylic acid compounds such as citric acid, benzoic acid, and hydroxybenzoic acid can be mentioned.
- Examples of the photoacid generator include onium salt compounds, sulfonimide compounds, and disulfonyldiazomethane compounds.
- Onium salt compounds include diphenyliodonium hexafluorophosphate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoro-normal butanesulfonate, diphenyliodonium perfluoro-normal octane sulfonate, diphenyliodonium camphorsulfonate, and bis(4-tert-butylphenyl)iodonium camphorsulfonate.
- iodonium salt compounds such as bis(4-tert-butylphenyl)iodonium trifluoromethanesulfonate, and triphenylsulfonium hexafluoroantimonate, triphenylsulfonium nonafluoro-normal butanesulfonate, triphenylsulfonium camphorsulfonate and triphenylsulfonium trifluoromethanesulfonate sulfonium salt compounds such as
- sulfonimide compounds include N-(trifluoromethanesulfonyloxy)succinimide, N-(nonafluoro-normalbutanesulfonyloxy)succinimide, N-(camphorsulfonyloxy)succinimide and N-(trifluoromethanesulfonyloxy)naphthalimide. mentioned.
- disulfonyldiazomethane compounds include bis(trifluoromethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane, bis(p-toluenesulfonyl)diazomethane, and bis(2,4-dimethylbenzenesulfonyl). ) diazomethane, and methylsulfonyl-p-toluenesulfonyl diazomethane.
- the acid generator can be used alone or in combination of two or more.
- the content of the acid generator is, for example, 0.1% by mass to 50% by mass, preferably 1% by mass to 30% by mass, relative to the following cross-linking agent. .
- the content of the acid generator is 50 to 200 mol% and 80 to 150 mol% with respect to the terminal end of the polymer.
- cross-linking agents contained as optional components in the resist underlayer film-forming composition of the present invention include hexamethoxymethylmelamine, tetramethoxymethylbenzoguanamine, 1,3,4,6-tetrakis(methoxymethyl)glycoluril (tetramethoxy methyl glycoluril) (POWDERLINK® 1174), 1,3,4,6-tetrakis(butoxymethyl)glycoluril, 1,3,4,6-tetrakis(hydroxymethyl)glycoluril, 1,3-bis (hydroxymethyl)urea, 1,1,3,3-tetrakis(butoxymethyl)urea and 1,1,3,3-tetrakis(methoxymethyl)urea.
- cross-linking agent of the present application is a nitrogen-containing compound having 2 to 6 substituents per molecule represented by the following formula (1d) that binds to a nitrogen atom, as described in International Publication No. 2017/187969. There may be.
- R 1 represents a methyl group or an ethyl group.
- the nitrogen-containing compound having 2 to 6 substituents represented by the formula (1d) in one molecule may be a glycoluril derivative represented by the following formula (1E).
- R 1s each independently represent a methyl group or an ethyl group
- R 2 and R 3 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group.
- Examples of the glycoluril derivative represented by the formula (1E) include compounds represented by the following formulas (1E-1) to (1E-6).
- the nitrogen-containing compound having 2 to 6 substituents represented by the formula (1d) in one molecule has 2 to 6 substituents in the molecule represented by the following formula (2d) bonded to the nitrogen atom. It can be obtained by reacting a nitrogen-containing compound with at least one compound represented by the following formula (3d).
- R 1 represents a methyl group or an ethyl group
- R 4 represents an alkyl group having 1 to 4 carbon atoms.
- the glycoluril derivative represented by the formula (1E) is obtained by reacting a glycoluril derivative represented by the following formula (2E) with at least one compound represented by the formula (3d).
- a nitrogen-containing compound having 2 to 6 substituents represented by the above formula (2d) in one molecule is, for example, a glycoluril derivative represented by the following formula (2E).
- R 2 and R 3 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group
- R 4 each independently represent an alkyl group having 1 to 4 carbon atoms. represents.
- Examples of the glycoluril derivative represented by the formula (2E) include compounds represented by the following formulas (2E-1) to (2E-4).
- examples of the compound represented by the formula (3d) include compounds represented by the following formulas (3d-1) and (3d-2).
- cross-linking agent may be a cross-linkable compound represented by the following formula (G-1) or formula (G-2) described in International Publication 2014/208542.
- Q 1 represents a single bond or a monovalent organic group
- R 1 and R 4 each represent an alkyl group having 2 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms.
- 2 to 10 alkyl group R 2 and R 5 each represent a hydrogen atom or a methyl group
- R 3 and R 6 each represent an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 40 carbon atoms indicates a group.
- n1 is an integer of 1 ⁇ n1 ⁇ 3, n2 is an integer of 2 ⁇ n2 ⁇ 5, n3 is an integer of 0 ⁇ n3 ⁇ 3, n4 is an integer of 0 ⁇ n4 ⁇ 3, and 3 ⁇ (n1+n2+n3+n4) ⁇ 6.
- n5 is an integer satisfying 1 ⁇ n5 ⁇ 3, n6 is an integer satisfying 1 ⁇ n6 ⁇ 4, n7 is an integer satisfying 0 ⁇ n7 ⁇ 3, n8 is an integer satisfying 0 ⁇ n8 ⁇ 3, and 2 ⁇ (n5+n6+n7+n8) ⁇ 5 show.
- m1 represents an integer from 2 to 10; )
- the crosslinkable compound represented by the above formula (G-1) or formula (G-2) comprises a compound represented by the following formula (G-3) or formula (G-4) and a hydroxyl group-containing ether compound or carbon atom It may be obtained by reaction with alcohols of numbers 2 to 10.
- Q 2 represents a single bond or an m2-valent organic group.
- R 8 , R 9 , R 11 and R 12 each represent a hydrogen atom or a methyl group, and R 7 and R 10 each have 1 carbon atom.
- n9 is an integer of 1 ⁇ n9 ⁇ 3, n10 is an integer of 2 ⁇ n10 ⁇ 5, n11 is an integer of 0 ⁇ n11 ⁇ 3, n12 is an integer of 0 ⁇ n12 ⁇ 3, and 3 ⁇ (n9+n10+n11+n12) ⁇ 6. show.
- n13 is an integer satisfying 1 ⁇ n13 ⁇ 3
- n14 is an integer satisfying 1 ⁇ n14 ⁇ 4
- n15 is an integer satisfying 0 ⁇ n15 ⁇ 3
- n16 is an integer satisfying 0 ⁇ n16 ⁇ 3, and 2 ⁇ (n13+n14+n15+n16) ⁇ 5.
- m2 represents an integer from 2 to 10; )
- Me represents a methyl group.
- the content of the cross-linking agent is, for example, 1% by mass to 50% by mass, preferably 5% by mass to 30% by mass, relative to the reaction product.
- a surfactant may be further added to the resist underlayer film-forming composition of the present invention in order to prevent pinholes, striations, and the like from occurring and to further improve coatability against surface unevenness.
- surfactants include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether, and polyoxyethylene nonylphenol ether.
- Polyoxyethylene alkyl allyl ethers such as polyoxyethylene/polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate, etc.
- sorbitan fatty acid esters polyoxyethylene sorbitan such as polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate
- Nonionic surfactants such as fatty acid esters, F-top EF301, EF303, EF352 (manufactured by Tochem Products Co., Ltd., trade names), Megafac F171, F173, R-30 (manufactured by Dainippon Ink Co., Ltd., commercial products name), Florard FC430, FC431 (manufactured by Sumitomo 3M Co., Ltd., trade name), Asahiguard AG710, Surflon S-382, SC101, SC102, SC103, SC104, SC105, SC106 (manufactured by Asahi Glass Co., Ltd., trade name), etc.
- organosiloxane polymer KP341 manufactured by Shin-Etsu Chemical Co., Ltd.
- the blending amount of these surfactants is usually 2.0% by mass or less, preferably 1.0% by mass or less, based on the total solid content of the resist underlayer film-forming composition of the present invention.
- These surfactants may be added singly or in combination of two or more.
- the solid content contained in the resist underlayer film-forming composition of the present invention is, for example, 0.01% by mass to 10% by mass.
- the resist underlayer film according to the present invention can be produced by applying the resist underlayer film-forming composition described above onto a semiconductor substrate and baking the composition.
- Semiconductor substrates to which the resist underlayer film-forming composition of the present invention is applied include, for example, silicon wafers, germanium wafers, and compound semiconductor wafers such as gallium arsenide, indium phosphide, gallium nitride, indium nitride, and aluminum nitride. be done.
- the inorganic film is formed by, for example, an ALD (atomic layer deposition) method, a CVD (chemical vapor deposition) method, a reactive sputtering method, an ion plating method, or a vacuum deposition method. It is formed by a spin coating method (spin on glass: SOG).
- the inorganic film examples include a polysilicon film, a silicon oxide film, a silicon nitride film, a BPSG (Boro-Phospho Silicate Glass) film, a titanium nitride film, a titanium oxynitride film, a tungsten film, a gallium nitride film, and a gallium arsenide film. are mentioned.
- the resist underlayer film-forming composition of the present invention is applied onto such a semiconductor substrate by a suitable coating method such as a spinner or coater. Thereafter, a resist underlayer film is formed by baking using a heating means such as a hot plate. Baking conditions are appropriately selected from a baking temperature of 100° C. to 400° C. and a baking time of 0.3 minutes to 60 minutes. Preferably, the baking temperature is 120° C. to 350° C. and the baking time is 0.5 minutes to 30 minutes, and more preferably the baking temperature is 150° C. to 300° C. and the baking time is 0.8 minutes to 10 minutes.
- the film thickness of the resist underlayer film to be formed is, for example, 0.001 ⁇ m (1 nm) to 10 ⁇ m, 0.002 ⁇ m (2 nm) to 1 ⁇ m, 0.005 ⁇ m (5 nm) to 0.5 ⁇ m (500 nm), 0.001 ⁇ m (1 nm).
- a method of manufacturing a patterned substrate includes the following steps. Usually, it is manufactured by forming a photoresist layer on a resist underlayer film.
- the photoresist formed by coating and baking on the resist underlayer film by a method known per se is not particularly limited as long as it is sensitive to the light used for exposure. Both negative and positive photoresists can be used.
- positive photoresist composed of novolac resin and 1,2-naphthoquinonediazide sulfonic acid ester;
- a chemically amplified photoresist comprising a low-molecular compound that decomposes to increase the alkali dissolution rate of the photoresist, an alkali-soluble binder, and a photoacid generator, and a binder having a group that decomposes with an acid to increase the alkali dissolution rate.
- Examples thereof include V146G (trade name) manufactured by JSR Corporation, APEX-E (trade name) manufactured by Shipley, PAR710 (trade name) manufactured by Sumitomo Chemical Co., Ltd., AR2772 (trade name) and SEPR430 (trade name) manufactured by Shin-Etsu Chemical Co., Ltd., and the like. Also, for example, Proc. SPIE, Vol. 3999, 330-334 (2000), Proc. SPIE, Vol. 3999, 357-364 (2000), and Proc. SPIE, Vol. 3999, 365-374 (2000).
- resist compositions include the following compositions.
- Actinic ray-sensitive or sensitive resin containing a resin A having a repeating unit having an acid-decomposable group in which the polar group is protected by a protective group that is released by the action of an acid, and a compound represented by the general formula (21) A radioactive resin composition.
- m represents an integer of 1-6.
- R 1 and R 2 each independently represent a fluorine atom or a perfluoroalkyl group.
- L 1 represents -O-, -S-, -COO-, -SO 2 -, or -SO 3 -.
- L2 represents an optionally substituted alkylene group or a single bond.
- W1 represents an optionally substituted cyclic organic group.
- M + represents a cation
- a radiation-sensitive resin comprising a polymer having a first structural unit represented by the following formula (31) and a second structural unit represented by the following formula (32) containing an acid-labile group, and an acid generator. Composition.
- Ar is a group obtained by removing (n+1) hydrogen atoms from arene having 6 to 20 carbon atoms.
- R 1 is a hydroxy group, a sulfanyl group, or a monovalent group having 1 to 20 carbon atoms.
- n is an integer of 0 to 11.
- R 2 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.
- R 3 is a monovalent group having 1 to 20 carbon atoms containing the acid dissociable group
- Z is a single bond, an oxygen atom or a sulfur atom
- R 4 is , a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.
- R 2 represents an alkyl group having 1 to 6 carbon atoms which may have a halogen atom, a hydrogen atom or a halogen atom
- X 1 is a single bond
- -CO-O-* or -CO-NR 4 -* * represents a bond with -Ar
- R 4 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms
- Ar is one or more groups selected from the group consisting of a hydroxy group and a carboxyl group represents an aromatic hydrocarbon group having 6 to 20 carbon atoms which may have ]
- resist films examples include the following.
- R A is each independently a hydrogen atom or a methyl group
- R 1 and R 2 are each independently a tertiary alkyl group having 4 to 6 carbon atoms
- Each R 3 is independently a fluorine atom or a methyl group
- m is an integer of 0 to 4
- X 1 is a single bond, a phenylene group or a naphthylene group, an ester bond, a lactone ring, or a phenylene is a linking group having 1 to 12 carbon atoms and containing at least one selected from a group and a naphthylene group
- X 2 is a single bond, an ester bond or an amide bond.
- resist materials include the following.
- R A is a hydrogen atom or a methyl group.
- X 1 is a single bond or an ester group.
- X 2 is a linear, branched or cyclic carbon an alkylene group having 1 to 12 carbon atoms or an arylene group having 6 to 10 carbon atoms, and part of the methylene groups constituting the alkylene group may be substituted with an ether group, an ester group or a lactone ring-containing group,
- at least one hydrogen atom contained in X 2 is substituted with a bromine atom
- X 3 is a single bond, an ether group, an ester group, or a linear, branched or cyclic group having 1 to 12 carbon atoms.
- Rf 1 to Rf 4 independently represents a hydrogen atom, a fluorine atom or a trifluoro a methyl group, at least one of which is a fluorine atom or a trifluoromethyl group, and Rf 1 and Rf 2 may combine to form a carbonyl group
- R 1 to R 5 each independently linear, branched or cyclic alkyl groups having 1 to 12 carbon atoms, linear, branched or cyclic alkenyl groups having 2 to 12 carbon atoms, alkynyl groups having 2 to 12 carbon atoms, and 6 to 20 carbon atoms an aryl group, an aralkyl group having 7 to 12 carbon atoms, or an aryloxyalkyl group having 7 to 12 carbon atoms, and some or all of the hydrogen atoms of these groups are hydroxy groups, carboxy groups,
- R A is a hydrogen atom or a methyl group.
- R 1 is a hydrogen atom or an acid-labile group.
- R 2 is a linear, branched or cyclic C 1 to 6 alkyl groups or halogen atoms other than bromine,
- X 1 is a single bond or a phenylene group, or a linear, branched or cyclic C 1-12 group which may contain an ester group or a lactone ring is an alkylene group of X 2 is -O-, -O-CH 2 - or -NH-,
- m is an integer of 1 to 4, and
- n is an integer of 0 to 3.
- a resist composition that generates acid upon exposure and whose solubility in a developer changes due to the action of the acid, Containing a base component (A) whose solubility in a developer changes under the action of an acid and a fluorine additive component (F) which exhibits decomposability in an alkaline developer,
- each Rf 21 is independently a hydrogen atom, an alkyl group, an alkoxy group, a hydroxyl group, a hydroxyalkyl group, or a cyano group.
- n" is an integer of 0 to 2. * is a bond.
- the structural unit (f1) includes a structural unit represented by the following general formula (f1-1) or a structural unit represented by the following general formula (f1-2).
- each R is independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms.
- X is a divalent linking group having no acid-labile site.
- a aryl is an optionally substituted divalent aromatic cyclic group.
- X 01 is a single bond or a divalent linking group.
- Each R 2 is independently an organic group having a fluorine atom.
- coatings examples include the following.
- An inorganic oxo/hydroxo-based composition An inorganic oxo/hydroxo-based composition.
- a coating solution comprising an organic solvent and a first organometallic compound represented by the formula RSnO (3/2-x/2) (OH) x where 0 ⁇ x ⁇ 3, wherein the solution from about 0.0025M to about 1.5M tin, and R is an alkyl or cycloalkyl group having 3 to 31 carbon atoms, wherein said alkyl or cycloalkyl group is a secondary or secondary A coating solution bonded to tin at a tertiary carbon atom.
- RSnO (3/2-x/2) (OH) x where 0 ⁇ x ⁇ 3, wherein the solution from about 0.0025M to about 1.5M tin, and R is an alkyl or cycloalkyl group having 3 to 31 carbon atoms, wherein said alkyl or cycloalkyl group is a secondary or secondary A coating solution bonded to tin at a tertiary carbon atom.
- An aqueous inorganic pattern-forming precursor comprising a mixture of water, a metal suboxide cation, a polyatomic inorganic anion, and a radiation-sensitive ligand comprising a peroxide group.
- Exposure is performed through a mask (reticle) for forming a predetermined pattern, and for example, i-ray, KrF excimer laser, ArF excimer laser, EUV (extreme ultraviolet) or EB (electron beam) is used. is preferably applied for EB (electron beam) or EUV (extreme ultraviolet) exposure, and preferably for EUV (extreme ultraviolet) exposure.
- An alkaline developer is used for development, and the development temperature is selected from 5° C. to 50° C. and the development time is appropriately selected from 10 seconds to 300 seconds.
- alkaline developer examples include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia, primary amines such as ethylamine and n-propylamine, diethylamine, secondary amines such as di-n-butylamine; tertiary amines such as triethylamine and methyldiethylamine; alcohol amines such as dimethylethanolamine and triethanolamine; Aqueous solutions of alkalis such as quaternary ammonium salts, pyrrole, cyclic amines such as piperidine, and the like can be used.
- inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia, primary amines such as ethylamine and n-propylamine, diethylamine, secondary amines such as di-n-butyl
- an alcohol such as isopropyl alcohol or a nonionic surfactant may be added in an appropriate amount to the aqueous alkali solution.
- Preferred developers among these are quaternary ammonium salts, more preferably tetramethylammonium hydroxide and choline.
- a surfactant or the like can be added to these developers. It is also possible to use a method of developing with an organic solvent such as butyl acetate instead of the alkaline developer, and developing the portion where the rate of alkali dissolution of the photoresist is not improved.
- the resist underlayer film is dry-etched.
- the inorganic film is formed on the surface of the semiconductor substrate used, the surface of the inorganic film is exposed, and when the inorganic film is not formed on the surface of the semiconductor substrate used, the semiconductor substrate is exposed. expose the surface.
- the substrate is processed by a method known per se (dry etching method, etc.), and a semiconductor device can be manufactured.
- the weight average molecular weights of the polymers shown in Synthesis Example 1, Synthesis Example 2, Synthesis Example 3, Synthesis Example 4, and Comparative Synthesis Example 1 below in this specification are the results of measurement by gel permeation chromatography (hereinafter abbreviated as GPC). is.
- GPC gel permeation chromatography
- the polymer solution does not become cloudy even when cooled to room temperature, and has good solubility in propylene glycol monomethyl ether.
- GPC analysis revealed that the polymer in the obtained solution had a weight average molecular weight of 5,000 in terms of standard polystyrene.
- the structure present in the polymer obtained in this synthesis example is shown in the following formula.
- the polymer solution does not become cloudy even when cooled to room temperature, and has good solubility in propylene glycol monomethyl ether.
- GPC analysis revealed that the polymer in the obtained solution had a weight average molecular weight of 6,000 in terms of standard polystyrene.
- the structure present in the polymer obtained in this synthesis example is shown in the following formula.
- the polymer solution does not become cloudy even when cooled to room temperature, and has good solubility in propylene glycol monomethyl ether.
- GPC analysis revealed that the polymer in the obtained solution had a weight average molecular weight of 5,000 in terms of standard polystyrene.
- the structure present in the polymer obtained in this synthesis example is shown in the following formula.
- the polymer solution does not become cloudy even when cooled to room temperature, and has good solubility in propylene glycol monomethyl ether.
- GPC analysis revealed that the polymer in the obtained solution had a weight average molecular weight of 6,000 in terms of standard polystyrene.
- the structure present in the polymer obtained in this synthesis example is shown in the following formula.
- the polymer solution does not become cloudy even when cooled to room temperature, and has good solubility in propylene glycol monomethyl ether.
- GPC analysis revealed that the polymer in the obtained solution had a weight average molecular weight of 5,000 in terms of standard polystyrene.
- the structure present in the polymer obtained in this synthesis example is shown in the following formula.
- Example 1 To 10.00 g of the polymer solution obtained in Synthesis Example 1 (solid content: 20.0% by weight), 0.27 g of p-toluenesulfonic acid (100 mol% relative to the polymer end) was added and the mixture was stirred at room temperature for 24 hours. Stirred. The p-toluenesulfonic acid was coordinated to the morpholine in the polymer by stirring for 24 hours. Thereafter, reprecipitation was carried out in 2-propanol to remove non-coordinated p-toluenesulfonic acid. Removal was confirmed by GPC. The resulting polymer solid was dissolved in propylene glycol monomethyl ether to form a solution. The structure of the polymer present in the polymer solution obtained in this example is shown in the formula below.
- Example 2 To 0.43 g (solid content: 16.4% by weight) of the polymer solution obtained in Example 1 above, 0.02 g of tetramethoxymethyl glycoluril (manufactured by Nippon Cytec Industries Co., Ltd.) and 44.5 g of propylene glycol monomethyl ether were added. and 4.99 g of propylene glycol monomethyl ether acetate were added and dissolved. Thereafter, the mixture was filtered using a polyethylene microfilter having a pore size of 0.05 ⁇ m to obtain a composition for forming a resist underlayer film for lithography.
- tetramethoxymethyl glycoluril manufactured by Nippon Cytec Industries Co., Ltd.
- Example 3 To 10.00 g of the polymer solution obtained in Synthesis Example 2 (solid content: 20.0% by weight), 0.27 g of p-toluenesulfonic acid (100 mol% relative to the polymer end) was added and the mixture was stirred at room temperature for 24 hours. Stirred. The p-toluenesulfonic acid was coordinated to the morpholine in the polymer by stirring for 24 hours. Thereafter, reprecipitation was carried out in 2-propanol to remove non-coordinated p-toluenesulfonic acid. Removal was confirmed by GPC. The resulting polymer solid was dissolved in propylene glycol monomethyl ether to form a solution. The polymer structure present in the polymer solution obtained in this example is shown in the following formula.
- Example 4 To 0.43 g (solid content: 16.4% by weight) of the polymer solution obtained in Example 3 above, 0.02 g of tetramethoxymethyl glycoluril (manufactured by Nippon Cytec Industries Co., Ltd.) and 44.5 g of propylene glycol monomethyl ether were added. and 4.99 g of propylene glycol monomethyl ether acetate were added and dissolved. Thereafter, the mixture was filtered using a polyethylene microfilter having a pore size of 0.05 ⁇ m to obtain a composition for forming a resist underlayer film for lithography.
- tetramethoxymethyl glycoluril manufactured by Nippon Cytec Industries Co., Ltd.
- Example 5 To 0.48 g (solid content: 20.0% by weight) of the polymer solution obtained in Synthesis Example 3 above, 0.02 g of tetramethoxymethyl glycoluril (manufactured by Nippon Cytec Industries Co., Ltd.) and 0.2 g of p-toluenesulfonic acid were added. 02 g (100 mol % with respect to the polymer terminal), 44.4 g of propylene glycol monomethyl ether and 4.99 g of propylene glycol monomethyl ether acetate were added and dissolved. Thereafter, the mixture was filtered using a polyethylene microfilter having a pore size of 0.05 ⁇ m to obtain a composition for forming a resist underlayer film for lithography.
- Example 6 To 0.48 g (solid content: 20.0% by weight) of the polymer solution obtained in Synthesis Example 4 above, 0.02 g of tetramethoxymethyl glycoluril (manufactured by Nippon Cytec Industries Co., Ltd.) and 0.2 g of p-toluenesulfonic acid were added. 02 g (100 mol % with respect to the polymer terminal), 44.4 g of propylene glycol monomethyl ether and 4.99 g of propylene glycol monomethyl ether acetate were added and dissolved. Thereafter, the mixture was filtered using a polyethylene microfilter having a pore size of 0.05 ⁇ m to obtain a composition for forming a resist underlayer film for lithography.
- Example 2 The resist underlayer film forming compositions of Example 2, Example 4, Example 5, Example 6 and Comparative Example 3 were each applied onto a silicon wafer using a spinner.
- the silicon wafer was baked on a hot plate at 205° C. for 60 seconds to obtain a resist underlayer film with a thickness of 5 nm.
- An EUV positive resist solution (containing methacrylic polymer) was spin-coated on the resist underlayer film and heated at 130° C. for 60 seconds to form an EUV resist film.
- the resist film was exposed under predetermined conditions using an electron beam lithography system (ELS-G130). After exposure, bake (PEB) at 100° C.
- ELS-G130 electron beam lithography system
- the composition for forming a resist underlayer film according to the present invention is a composition for forming a resist underlayer film capable of forming a desired resist pattern, a method for producing a substrate with a resist pattern using the composition for forming a resist underlayer film, a semiconductor A method of manufacturing a device can be provided.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
末端に酸化合物を担持したポリマー、及び溶剤を含む、レジスト下層膜形成組成物。
前記酸化合物が、ポリマー末端に存在する塩基とイオン結合している、[1]に記載のレジスト下層膜形成組成物。
前記Bが、窒素原子を含む、[3]に記載のレジスト下層膜形成組成物。
前記Bが、R1R2R3Nであり、
R1、及びR2はそれぞれ独立に、置換されていてもよい直鎖、若しくは分岐の飽和、若しくは不飽和の脂肪族炭化水素基を表し、
R1とR2とはヘテロ原子を介して、若しくはヘテロ原子を介さずに環を形成していてもよく、
R3は置換されていてもよい芳香族基、又は置換されていてもよい直鎖、若しくは分岐の飽和、若しくは不飽和の脂肪族炭化水素基を表し、
R1とR2が環を形成していないとき、R3は置換されていてもよい芳香族基である、
[3]又は[4]に記載のレジスト下層膜形成組成物。
前記Bが、
[式中、
R1、及びR2はそれぞれ独立に、置換されていてもよい直鎖、若しくは分岐の飽和、若しくは不飽和の脂肪族炭化水素基を表し、
R3は置換されていてもよい芳香族基を表す。]、又は
下記式(II)
[式(II)中、
Rは、水素原子、ニトロ基、シアノ基、アミノ基、カルボキシル基、ハロゲン原子、炭素数1~10のアルコキシ基、炭素数1~10のアルキル基、炭素数2~10のアルケニル基、炭素数6~40のアリール基、エーテル結合を含む有機基、ケトン結合を含む有機基、エステル結合を含む有機基、またはそれらを組み合わせた基であり、
R’は、
であり、
Ra及びRbはそれぞれ独立して、任意に置換されたアルキルを表し、
XはO、S、またはSO2であり、
n、及びmはそれぞれ独立に2、3、4、5、又は6である。]
で表される塩基である、[3]又は[4]に記載のレジスト下層膜形成組成物。
上記R3が置換されていてもよいフェニル、ナフチル、アントラセニル、又はフェナントレニル基を表し、
上記Rが、水素原子、メチル基、エチル基、アリル基、又はシアノメチル基であり、
上記R’が、
で表される塩基である、[6]に記載のレジスト下層膜形成組成物。
前記A1が、下記式
(式(III)中、Aは、置換されていてもよい直鎖、分岐、若しくは環状の飽和、若しくは不飽和の脂肪族炭化水素基、カルボキシル基以外の基によって置換されていてもよいアリール基、又は置換されていてもよいヘテロアリール基である。)で表される、[3]~[7]何れか1項に記載のレジスト下層膜形成組成物。
前記ポリマーが、下記式(1):
〔式中、A1、A2、A3、A4、A5、及びA6は、それぞれ、水素原子、メチル基またはエチル基を表し、X1は式(2)、式(3)、式(4)、又は式(0):
(式中R1及びR2はそれぞれ、水素原子、ハロゲン原子、炭素原子数1~6のアルキル基、炭素原子数3~6のアルケニル基、ベンジル基またはフェニル基を表し、そして、前記炭素原子数1~6のアルキル基、炭素原子数3~6のアルケニル基、ベンジル基及びフェニル基は、炭素原子数1~6のアルキル基、ハロゲン原子、炭素原子数1~6のアルコキシ基、ニトロ基、シアノ基、ヒドロキシ基、カルボキシル基及び炭素原子数1~6のアルキルチオ基からなる群から選ばれる基で置換されていてもよく、また、R1とR2は互いに結合して炭素原子数3~6の環を形成していてもよく、R3はハロゲン原子、炭素原子数1~6のアルキル基、炭素原子数3~6のアルケニル基、ベンジル基またはフェニル基を表し、そして、前記フェニル基は、炭素原子数1~6のアルキル基、ハロゲン原子、炭素数1~6のアルコキシ基、ニトロ基、シアノ基、ヒドロキシ基、及び炭素原子数1~6のアルキルチオ基からなる群から選ばれる基で置換されていてもよい)を表し、Qは式(5)または式(6):
(式中Q1は炭素原子数1~10のアルキレン基、フェニレン基、ナフチレン基、またはアントリレン基を表し、そして、前記アルキレン基、フェニレン基、ナフチレン基、及びアントリレン基は、それぞれ、炭素原子数1~6のアルキル基、炭素原子数2~7のカルボニルオキシアルキル基、ハロゲン原子、炭素原子数1~6のアルコキシ基、フェニル基、ニトロ基、シアノ基、ヒドロキシ基、炭素原子数1~6のアルキルチオ基、ジスルフィド基を有する基、カルボキシル基又はそれらの組み合わせからなる基で置換されていてもよく、前記アルキレン基は、ジスルフィド結合で中断されていてもよく、n1及びn2はそれぞれ0または1の数を表し、X2は式(2)、式(3)、又は式(0)を表す)を表す〕で表される繰り返し単位構造を有するポリマーである、[1]~[8]の何れか1項に記載のレジスト下層膜形成組成物。
架橋剤をさらに含む、[1]~[9]の何れか1項に記載のレジスト下層膜形成組成物。
酸発生剤をさらに含む、[1]~[10]の何れか1項に記載のレジスト下層膜形成組成物。
[1]~[11]に記載のレジスト下層膜形成組成物からなる塗布膜の焼成物であることを特徴とするレジスト下層膜。
半導体基板上に[1]~[11]何れか1項に記載のレジスト下層膜形成組成物を塗布しベークしてレジスト下層膜を形成する工程、
前記レジスト下層膜上にレジストを塗布しベークしてレジスト膜を形成する工程、
前記レジスト下層膜と前記レジストで被覆された半導体基板を露光する工程、
露光後の前記レジスト膜を現像し、パターニングする工程
を含む、パターニングされた基板の製造方法。
半導体基板上に、[1]~[11]何れか1項に記載のレジスト下層膜形成組成物からなるレジスト下層膜を形成する工程と、
前記レジスト下層膜の上にレジスト膜を形成する工程と、
レジスト膜に対する光又は電子線の照射とその後の現像によりレジストパターンを形成する工程と、
形成された前記レジストパターンを介して前記レジスト下層膜をエッチングすることによりパターン化されたレジスト下層膜を形成する工程と、
パターン化された前記レジスト下層膜により半導体基板を加工する工程と、
を含むことを特徴とする、半導体装置の製造方法。
本発明のレジスト下層膜形成組成物は、末端に酸化合物を担持したポリマー、及び溶剤を含む。
本発明の酸化合物は、本発明の効果を奏する酸化合物であれば制限は無いが、熱酸発生剤、光酸発生剤何れも使用することができる。熱酸発生剤としては、p-トルエンスルホン酸、トリフルオロメタンスルホン酸、ピリジニウム-p-トルエンスルホネート(ピリジニウム-p-トルエンスルホン酸)、ピリジニウムフェノールスルホン酸、ピリジニウム-p-ヒドロキシベンゼンスルホン酸(p-フェノールスルホン酸ピリジニウム塩)、ピリジニウム-トリフルオロメタンスルホン酸、サリチル酸、カンファースルホン酸、5-スルホサリチル酸、4-クロロベンゼンスルホン酸、4-ヒドロキシベンゼンスルホン酸、ベンゼンジスルホン酸、1-ナフタレンスルホン酸、クエン酸、安息香酸、ヒドロキシ安息香酸等のスルホン酸化合物及びカルボン酸化合物が挙げられる。
R1、及びR2はそれぞれ独立に、置換されていてもよい直鎖、若しくは分岐の飽和、若しくは不飽和の脂肪族炭化水素基を表し、
R1とR2とはヘテロ原子を介して、若しくはヘテロ原子を介さずに環を形成していてもよく、
R3は置換されていてもよい芳香族基、又は置換されていてもよい直鎖、若しくは分岐の飽和、若しくは不飽和の脂肪族炭化水素基を表し、
R1とR2が環を形成していないとき、R3は置換されていてもよい芳香族基であってよい。
[式中、
R1、及びR2はそれぞれ独立に、置換されていてもよい直鎖、若しくは分岐の飽和、若しくは不飽和の脂肪族炭化水素基を表し、
R3は置換されていてもよい芳香族基を表す。]、又は
下記式(II)
[式(II)中、
Rは、水素原子、ニトロ基、シアノ基、アミノ基、カルボキシル基、ハロゲン原子、炭素数1~10のアルコキシ基、炭素数1~10のアルキル基、炭素数2~10のアルケニル基、炭素数6~40のアリール基、エーテル結合を含む有機基、ケトン結合を含む有機基、エステル結合を含む有機基、またはそれらを組み合わせた基であり、
R’は、
であり、
Ra及びRbはそれぞれ独立して、任意に置換されたアルキルを表し、
XはO、S、またはSO2であり、
n、及びmはそれぞれ独立に2、3、4、5、又は6である。]
で表される塩基であってよい。
上記Rが、水素原子、メチル基、エチル基、アリル基、又はシアノメチル基であり、
上記R’が、
で表される塩基であってよい。
(式(III)中、Aは、置換されていてもよい直鎖、分岐、若しくは環状の飽和、若しくは不飽和の脂肪族炭化水素基、カルボキシル基以外の基によって置換されていてもよいアリール基、又は置換されていてもよいヘテロアリール基である。)で表されてよい。
本発明のレジスト下層膜形成組成物に含まれるポリマーは、本願の効果を奏するポリマーであれば制限が無いが、国際公開2013/018802号公報に記載の下記式(1):
〔式中、A1、A2、A3、A4、A5、及びA6は、それぞれ、水素原子、メチル基またはエチル基を表し、X1は式(2)、式(3)、式(4)、又は式(0):
(式中R1及びR2はそれぞれ、水素原子、ハロゲン原子、炭素原子数1~6のアルキル基、炭素原子数3~6のアルケニル基、ベンジル基またはフェニル基を表し、そして、前記炭素原子数1~6のアルキル基、炭素原子数3~6のアルケニル基、ベンジル基及びフェニル基は、炭素原子数1~6のアルキル基、ハロゲン原子、炭素原子数1~6のアルコキシ基、ニトロ基、シアノ基、ヒドロキシ基、カルボキシル基及び炭素原子数1~6のアルキルチオ基からなる群から選ばれる基で置換されていてもよく、また、R1とR2は互いに結合して炭素原子数3~6の環を形成していてもよく、R3はハロゲン原子、炭素原子数1~6のアルキル基、炭素原子数3~6のアルケニル基、ベンジル基またはフェニル基を表し、そして、前記フェニル基は、炭素原子数1~6のアルキル基、ハロゲン原子、炭素数1~6のアルコキシ基、ニトロ基、シアノ基、ヒドロキシ基、及び炭素原子数1~6のアルキルチオ基からなる群から選ばれる基で置換されていてもよい)を表し、Qは式(5)または式(6):
(式中Q1は炭素原子数1~10のアルキレン基、フェニレン基、ナフチレン基、またはアントリレン基を表し、そして、前記アルキレン基、フェニレン基、ナフチレン基、及びアントリレン基は、それぞれ、炭素原子数1~6のアルキル基、炭素原子数2~7のカルボニルオキシアルキル基、ハロゲン原子、炭素原子数1~6のアルコキシ基、フェニル基、ニトロ基、シアノ基、ヒドロキシ基、炭素原子数1~6のアルキルチオ基、ジスルフィド基を有する基、カルボキシル基又はそれらの組み合わせからなる基で置換されていてもよく、前記アルキレン基は、ジスルフィド結合で中断されていてもよく、n1及びn2はそれぞれ0または1の数を表し、X2は式(2)、式(3)、又は式(0)を表す)を表す〕で表される繰り返し単位構造を有するポリマーであってよい。
本願のレジスト下層膜形成組成物に使用される溶剤は、前記ポリマー等の常温で固体の含有成分を均一に溶解できる溶剤であれば特に限定は無いが、一般的に半導体リソグラフィー工程用薬液に用いられる有機溶剤が好ましい。具体的には、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、メチルセロソルブアセテート、エチルセロソルブアセテート、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、プロピレングリコール、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールプロピルエーテルアセテート、トルエン、キシレン、メチルエチルケトン、メチルイソブチルケトン、シクロペンタノン、シクロヘキサノン、シクロヘプタノン、4-メチル-2-ペンタノール、2―ヒドロキシイソ酪酸メチル、2―ヒドロキシイソ酪酸エチル、エトキシ酢酸エチル、酢酸2-ヒドロキシエチル、3-メトキシプロピオン酸メチル、3-メトキシプロピオン酸エチル、3-エトキシプロピオン酸エチル、3-エトキシプロピオン酸メチル、ピルビン酸メチル、ピルビン酸エチル、酢酸エチル、酢酸ブチル、乳酸エチル、乳酸ブチル、2-ヘプタノン、メトキシシクロペンタン、アニソール、γ-ブチロラクトン、N-メチルピロリドン、N,N-ジメチルホルムアミド、及びN,N-ジメチルアセトアミドが挙げられる。これらの溶剤は、単独で又は2種以上を組み合わせて用いることができる。
本発明のレジスト下層膜形成組成物に任意成分として含まれる酸発生剤は、前記ポリマー末端に担持された酸化合物に加え、さらに同一、又は異なった酸化合物、酸発生剤を含んでよい。酸発生剤は、熱酸発生剤、光酸発生剤何れも使用することができるが、熱酸発生剤を使用することが好ましい。熱酸発生剤としては、例えば、p-トルエンスルホン酸、トリフルオロメタンスルホン酸、ピリジニウム-p-トルエンスルホネート(ピリジニウム-p-トルエンスルホン酸)、ピリジニウムフェノールスルホン酸、ピリジニウム-p-ヒドロキシベンゼンスルホン酸(p-フェノールスルホン酸ピリジニウム塩)、ピリジニウム-トリフルオロメタンスルホン酸、サリチル酸、カンファースルホン酸、5-スルホサリチル酸、4-クロロベンゼンスルホン酸、4-ヒドロキシベンゼンスルホン酸、ベンゼンジスルホン酸、1-ナフタレンスルホン酸、クエン酸、安息香酸、ヒドロキシ安息香酸等のスルホン酸化合物及びカルボン酸化合物が挙げられる。
本発明のレジスト下層膜形成組成物に任意成分として含まれる架橋剤としては、例えば、ヘキサメトキシメチルメラミン、テトラメトキシメチルベンゾグアナミン、1,3,4,6-テトラキス(メトキシメチル)グリコールウリル(テトラメトキシメチルグリコールウリル)(POWDERLINK〔登録商標〕1174)、1,3,4,6-テトラキス(ブトキシメチル)グリコールウリル、1,3,4,6-テトラキス(ヒドロキシメチル)グリコールウリル、1,3-ビス(ヒドロキシメチル)尿素、1,1,3,3-テトラキス(ブトキシメチル)尿素及び1,1,3,3-テトラキス(メトキシメチル)尿素が挙げられる。
(式(1E)中、4つのR1はそれぞれ独立にメチル基又はエチル基を表し、R2及びR3はそれぞれ独立に水素原子、炭素原子数1~4のアルキル基、又はフェニル基を表す。)
前記式(1E)で表されるグリコールウリル誘導体として、例えば、下記式(1E-1)~式(1E-6)で表される化合物が挙げられる。
(式(2d)及び式(3d)中、R1はメチル基又はエチル基を表し、R4は炭素原子数1~4のアルキル基を表す。)
前記式(1E)で表されるグリコールウリル誘導体は、下記式(2E)で表されるグリコールウリル誘導体と前記式(3d)で表される少なくとも1種の化合物とを反応させることにより得られる。
(式(2E)中、R2及びR3はそれぞれ独立に水素原子、炭素原子数1~4のアルキル基、又はフェニル基を表し、R4はそれぞれ独立に炭素原子数1~4のアルキル基を表す。)
前記式(2E)で表されるグリコールウリル誘導体として、例えば、下記式(2E-1)~式(2E-4)で表される化合物が挙げられる。さらに前記式(3d)で表される化合物として、例えば下記式(3d-1)及び式(3d-2)で表される化合物が挙げられる。
(式中、Q1は単結合又はm1価の有機基を示し、R1及びR4はそれぞれ炭素原子数2乃至10のアルキル基、又は炭素原子数1乃至10のアルコキシ基を有する炭素原子数2乃至10のアルキル基を示し、R2及びR5はそれぞれ水素原子又はメチル基を示し、R3及びR6はそれぞれ炭素原子数1乃至10のアルキル基、又は炭素原子数6乃至40のアリール基を示す。
n1は1≦n1≦3の整数、n2は2≦n2≦5の整数、n3は0≦n3≦3の整数、n4は0≦n4≦3の整数、3≦(n1+n2+n3+n4)≦6の整数を示す。
n5は1≦n5≦3の整数、n6は1≦n6≦4の整数、n7は0≦n7≦3の整数、n8は0≦n8≦3の整数、2≦(n5+n6+n7+n8)≦5の整数を示す。
m1は2乃至10の整数を示す。)
(式中、Q2は単結合又はm2価の有機基を示す。R8、R9、R11及びR12はそれぞれ水素原子又はメチル基を示し、R7及びR10はそれぞれ炭素原子数1乃至10のアルキル基、又は炭素原子数6乃至40のアリール基を示す。
n9は1≦n9≦3の整数、n10は2≦n10≦5の整数、n11は0≦n11≦3の整数、n12は0≦n12≦3の整数、3≦(n9+n10+n11+n12)≦6の整数を示す。
n13は1≦n13≦3の整数、n14は1≦n14≦4の整数、n15は0≦n15≦3の整数、n16は0≦n16≦3の整数、2≦(n13+n14+n15+n16)≦5の整数を示す。
m2は2乃至10の整数を示す。)
本発明のレジスト下層膜形成組成物には、ピンホールやストリエーション等の発生がなく、表面むらに対する塗布性をさらに向上させるために、さらに界面活性剤を添加することができる。界面活性剤としては、例えばポリオキシエチレンラウリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンセチルエーテル、ポリオキシエチレンオレイルエーテル等のポリオキシエチレンアルキルエーテル類、ポリオキシエチレンオクチルフェノールエーテル、ポリオキシエチレンノニルフェノールエーテル等のポリオキシエチレンアルキルアリルエーテル類、ポリオキシエチレン・ポリオキシプロピレンブロックコポリマー類、ソルビタンモノラウレート、ソルビタンモノパルミテート、ソルビタンモノステアレート、ソルビタンモノオレエート、ソルビタントリオレエート、ソルビタントリステアレート等のソルビタン脂肪酸エステル類、ポリオキシエチレンソルビタンモノラウレート、ポリオキシエチレンソルビタンモノパルミテート、ポリオキシエチレンソルビタンモノステアレート、ポリオキシエチレンソルビタントリオレエート、ポリオキシエチレンソルビタントリステアレート等のポリオキシエチレンソルビタン脂肪酸エステル類等のノニオン系界面活性剤、エフトップEF301、EF303、EF352((株)トーケムプロダクツ製、商品名)、メガファックF171、F173、R-30(大日本インキ(株)製、商品名)、フロラードFC430、FC431(住友スリーエム(株)製、商品名)、アサヒガードAG710、サーフロンS-382、SC101、SC102、SC103、SC104、SC105、SC106(旭硝子(株)製、商品名)等のフッ素系界面活性剤、オルガノシロキサンポリマーKP341(信越化学工業(株)製)等を挙げることができる。これらの界面活性剤の配合量は、本発明のレジスト下層膜形成組成物の全固形分に対して通常2.0質量%以下、好ましくは1.0質量%以下である。これらの界面活性剤は単独で添加してもよいし、また2種以上の組合せで添加することもできる。
本発明に係るレジスト下層膜は、前述したレジスト下層膜形成組成物を半導体基板上に塗布し、焼成することにより製造することができる。
パターンニングされた基板の製造方法は以下の工程を経る。通常、レジスト下層膜の上にフォトレジスト層を形成して製造される。レジスト下層膜の上に自体公知の方法で塗布、焼成して形成されるフォトレジストとしては露光に使用される光に感光するものであれば特に限定はない。ネガ型フォトレジスト及びポジ型フォトレジストのいずれも使用できる。ノボラック樹脂と1,2-ナフトキノンジアジドスルホン酸エステルとからなるポジ型フォトレジスト、酸により分解してアルカリ溶解速度を上昇させる基を有するバインダーと光酸発生剤からなる化学増幅型フォトレジスト、酸により分解してフォトレジストのアルカリ溶解速度を上昇させる低分子化合物とアルカリ可溶性バインダーと光酸発生剤とからなる化学増幅型フォトレジスト、及び酸により分解してアルカリ溶解速度を上昇させる基を有するバインダーと酸により分解してフォトレジストのアルカリ溶解速度を上昇させる低分子化合物と光酸発生剤からなる化学増幅型フォトレジスト、メタル元素を含有するレジストなどがある。例えば、JSR(株)製商品名V146G、シプレー社製商品名APEX-E、住友化学(株)製商品名PAR710、及び信越化学工業(株)製商品名AR2772、SEPR430等が挙げられる。また、例えば、Proc.SPIE,Vol.3999,330-334(2000)、Proc.SPIE,Vol.3999,357-364(2000)、やProc.SPIE,Vol.3999,365-374(2000)に記載されているような、含フッ素原子ポリマー系フォトレジストを挙げることができる。
(式(31)中、Arは、炭素数6~20のアレーンから(n+1)個の水素原子を除いた基である。R1は、ヒドロキシ基、スルファニル基又は炭素数1~20の1価の有機基である。nは、0~11の整数である。nが2以上の場合、複数のR1は同一又は異なる。R2は、水素原子、フッ素原子、メチル基又はトリフルオロメチル基である。式(32)中、R3は、上記酸解離性基を含む炭素数1~20の1価の基である。Zは、単結合、酸素原子又は硫黄原子である。R4は、水素原子、フッ素原子、メチル基又はトリフルオロメチル基である。)
[式中、
R2は、ハロゲン原子を有してもよい炭素数1~6のアルキル基、水素原子又はハロゲン原子を表し、X1は、単結合、-CO-O-*又は-CO-NR4-*を表し、*は-Arとの結合手を表し、R4は、水素原子又は炭素数1~4のアルキル基を表し、Arは、ヒドロキシ基及びカルボキシル基からなる群から選ばれる1以上の基を有していてもよい炭素数6~20の芳香族炭化水素基を表す。]
(式(a1)及び式(a2)中、RAは、それぞれ独立に、水素原子又はメチル基である。R1及びR2は、それぞれ独立に、炭素数4~6の3級アルキル基である。R3は、それぞれ独立に、フッ素原子又はメチル基である。mは、0~4の整数である。X1は、単結合、フェニレン基若しくはナフチレン基、又はエステル結合、ラクトン環、フェニレン基及びナフチレン基から選ばれる少なくとも1種を含む炭素数1~12の連結基である。X2は、単結合、エステル結合又はアミド結合である。)
(式(b1)及び式(b2)中、RAは、水素原子又はメチル基である。X1は、単結合又はエステル基である。X2は、直鎖状、分岐状若しくは環状の炭素数1~12のアルキレン基又は炭素数6~10のアリーレン基であり、該アルキレン基を構成するメチレン基の一部が、エーテル基、エステル基又はラクトン環含有基で置換されていてもよく、また、X2に含まれる少なくとも1つの水素原子が臭素原子で置換されている。X3は、単結合、エーテル基、エステル基、又は炭素数1~12の直鎖状、分岐状若しくは環状のアルキレン基であり、該アルキレン基を構成するメチレン基の一部が、エーテル基又はエステル基で置換されていてもよい。Rf1~Rf4は、それぞれ独立に、水素原子、フッ素原子又はトリフルオロメチル基であるが、少なくとも1つはフッ素原子又はトリフルオロメチル基である。また、Rf1及びRf2が合わさってカルボニル基を形成してもよい。R1~R5は、それぞれ独立に、直鎖状、分岐状若しくは環状の炭素数1~12のアルキル基、直鎖状、分岐状若しくは環状の炭素数2~12のアルケニル基、炭素数2~12のアルキニル基、炭素数6~20のアリール基、炭素数7~12のアラルキル基、又は炭素数7~12のアリールオキシアルキル基であり、これらの基の水素原子の一部又は全部が、ヒドロキシ基、カルボキシ基、ハロゲン原子、オキソ基、シアノ基、アミド基、ニトロ基、スルトン基、スルホン基又はスルホニウム塩含有基で置換されていてもよく、これらの基を構成するメチレン基の一部が、エーテル基、エステル基、カルボニル基、カーボネート基又はスルホン酸エステル基で置換されていてもよい。また、R1とR2とが結合して、これらが結合する硫黄原子と共に環を形成してもよい。)
(式(a)中、RAは、水素原子又はメチル基である。R1は、水素原子又は酸不安定基である。R2は、直鎖状、分岐状若しくは環状の炭素数1~6のアルキル基、又は臭素以外のハロゲン原子である。X1は、単結合若しくはフェニレン基、又はエステル基若しくはラクトン環を含んでいてもよい直鎖状、分岐状若しくは環状の炭素数1~12のアルキレン基である。X2は、-O-、-O-CH2-又は-NH-である。mは、1~4の整数である。nは、0~3の整数である。)
露光により酸を発生し、酸の作用により現像液に対する溶解性が変化するレジスト組成物であって、
酸の作用により現像液に対する溶解性が変化する基材成分(A)及びアルカリ現像液に対して分解性を示すフッ素添加剤成分(F)を含有し、
前記フッ素添加剤成分(F)は、塩基解離性基を含む構成単位(f1)と、下記一般式(f2-r-1)で表される基を含む構成単位(f2)と、を有するフッ素樹脂成分(F1)を含有することを特徴とする、レジスト組成物。
[式(f1-1)、(f1-2)中、Rは、それぞれ独立に、水素原子、炭素数1~5のアルキル基又は炭素数1~5のハロゲン化アルキル基である。Xは、酸解離性部位を有さない2価の連結基である。Aarylは、置換基を有していてもよい2価の芳香族環式基である。X01は、単結合又は2価の連結基である。R2は、それぞれ独立に、フッ素原子を有する有機基である。]
カラム温度:40℃
溶媒:テトラヒドロフラン(THF)
流量:1.0ml/分
標準試料:ポリスチレン(東ソー(株)製)
モノアリルジグリシジルイソシアヌル酸(四国化成工業(株)製)5.00g、3,3’-ジチオジプロピオン酸(東京化成工業(株)製、商品名:DTDPA)3.01g、モルホリン(東京化成工業(株)製)0.59g、テトラブチルホスホニウムブロマイド(ACROSS社製)0.20gを、プロピレングリコールモノメチルエーテル12.56gに加え溶解させた。反応容器を窒素置換後、80℃で24時間反応させ、ポリマー溶液を得た。当該ポリマー溶液は、室温に冷却しても白濁等を生じることはなく、プロピレングリコールモノメチルエーテルに対する溶解性は良好である。GPC分析を行ったところ、得られた溶液中のポリマーは標準ポリスチレン換算にて重量平均分子量5,000であった。本合成例で得られたポリマー中に存在する構造を下記式に示す。
モノアリルジグリシジルイソシアヌル酸(四国化成工業(株)製)5.00g、3,3’-ジチオジプロピオン酸(東京化成工業(株)製、商品名:DTDPA)3.18g、4-ジメチルアミノ安息香酸(東京化成工業(株)製)0.47g、テトラブチルホスホニウムブロマイド(ACROSS社製)0.20gを、プロピレングリコールモノメチルエーテル13.29gに加え溶解させた。反応容器を窒素置換後、80℃で24時間反応させ、ポリマー溶液を得た。当該ポリマー溶液は、室温に冷却しても白濁等を生じることはなく、プロピレングリコールモノメチルエーテルに対する溶解性は良好である。GPC分析を行ったところ、得られた溶液中のポリマーは標準ポリスチレン換算にて重量平均分子量6,000であった。本合成例で得られたポリマー中に存在する構造を下記式に示す。
モノアリルジグリシジルイソシアヌル酸(四国化成工業(株)製)20.00g、ジエチルバルビタール(八代製薬(株)製)11.16g、モルホリン(東京化成工業(株)製)1.86g、テトラブチルホスホニウムブロマイド(ACROSS社製)0.83gを、プロピレングリコールモノメチルエーテル50.78gに加え溶解させた。反応容器を窒素置換後、105℃で24時間反応させ、ポリマー溶液を得た。当該ポリマー溶液は、室温に冷却しても白濁等を生じることはなく、プロピレングリコールモノメチルエーテルに対する溶解性は良好である。GPC分析を行ったところ、得られた溶液中のポリマーは標準ポリスチレン換算にて重量平均分子量5,000であった。本合成例で得られたポリマー中に存在する構造を下記式に示す。
モノアリルジグリシジルイソシアヌル酸(四国化成工業(株)製)5.00g、ジエチルバルビタール(八代製薬(株)製)2.80g、4-ジメチルアミノ安息香酸(東京化成工業(株)製)0.89g、テトラブチルホスホニウムブロマイド(ACROSS社製)0.20gを、プロピレングリコールモノメチルエーテル13.34gに加え溶解させた。反応容器を窒素置換後、105℃で24時間反応させ、ポリマー溶液を得た。当該ポリマー溶液は、室温に冷却しても白濁等を生じることはなく、プロピレングリコールモノメチルエーテルに対する溶解性は良好である。GPC分析を行ったところ、得られた溶液中のポリマーは標準ポリスチレン換算にて重量平均分子量6,000であった。本合成例で得られたポリマー中に存在する構造を下記式に示す。
モノアリルジグリシジルイソシアヌル酸(四国化成工業(株)製)3.00g、3,3’-ジチオジプロピオン酸(堺化学工業(株)製、商品名:DTDPA)1.91g、アダマンタンカルボン酸(東京化成工業(株)製)0.57g、テトラブチルホスホニウムブロマイド(ACROSS社製)0.14gを、プロピレングリコールモノメチルエーテル6.87gに加え溶解させた。反応容器を窒素置換後、80℃で24時間反応させ、ポリマー溶液を得た。当該ポリマー溶液は、室温に冷却しても白濁等を生じることはなく、プロピレングリコールモノメチルエーテルに対する溶解性は良好である。GPC分析を行ったところ、得られた溶液中のポリマーは標準ポリスチレン換算にて重量平均分子量5,000であった。本合成例で得られたポリマー中に存在する構造を下記式に示す。
上記合成例1で得られたポリマー溶液10.00g(固形分:20.0重量%)に、p-トルエンスルホン酸0.27g(ポリマー末端に対して100モル%)を添加し室温で24時間撹拌した。24時間撹拌することで、p-トルエンスルホン酸をポリマー中のモルホリンに配位させた。その後、2-プロパノールに再沈殿を行い、配位していないp-トルエンスルホン酸を除去した。除去はGPCにて確認を行った。得られたポリマー固体をプロピレングリコールモノメチルエーテルに溶解させ、溶液状態とした。本実施例で得られたポリマー溶液中に存在するポリマーの構造を下記式に示す。
上記実施例1で得られたポリマー溶液0.43g(固形分:16.4重量%)に、テトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製)0.02g、プロピレングリコールモノメチルエーテル44.5g及びプロピレングリコールモノメチルエーテルアセテート4.99gを加え溶解させた。その後孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過して、リソグラフィー用レジスト下層膜形成組成物とした。
上記合成例2で得られたポリマー溶液10.00g(固形分:20.0重量%)に、p-トルエンスルホン酸0.27g(ポリマー末端に対して100モル%)を添加し室温で24時間撹拌した。24時間撹拌することで、p-トルエンスルホン酸をポリマー中のモルホリンに配位させた。その後、2-プロパノールに再沈殿を行い、配位していないp-トルエンスルホン酸を除去した。除去はGPCにて確認を行った。得られたポリマー固体をプロピレングリコールモノメチルエーテルに溶解させ、溶液状態とした。本実施例で得られたポリマー溶液中に存在するポリマー構造を下記式に示す。
上記実施例3で得られたポリマー溶液0.43g(固形分:16.4重量%)に、テトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製)0.02g、プロピレングリコールモノメチルエーテル44.5g及びプロピレングリコールモノメチルエーテルアセテート4.99gを加え溶解させた。その後孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過して、リソグラフィー用レジスト下層膜形成組成物とした。
上記合成例3で得られたポリマー溶液0.48g(固形分:20.0重量%)に、テトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製)0.02g、p-トルエンスルホン酸0.02g(ポリマー末端に対して100モル%)、プロピレングリコールモノメチルエーテル44.4g及びプロピレングリコールモノメチルエーテルアセテート4.99gを加え溶解させた。その後孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過して、リソグラフィー用レジスト下層膜形成組成物とした。
上記合成例4で得られたポリマー溶液0.48g(固形分:20.0重量%)に、テトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製)0.02g、p-トルエンスルホン酸0.02g(ポリマー末端に対して100モル%)、プロピレングリコールモノメチルエーテル44.4g及びプロピレングリコールモノメチルエーテルアセテート4.99gを加え溶解させた。その後孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過して、リソグラフィー用レジスト下層膜形成組成物とした。
上記比較合成例1で得られたポリマー溶液10.00g(固形分:20.0重量%)に、p-トルエンスルホン酸0.27g(ポリマー末端に対して100モル%)を添加し室温で24時間撹拌した。その後、2-プロパノールに再沈殿を行い、配位していないp-トルエンスルホン酸を除去した。除去はGPCにて確認を行った。得られたポリマー固体をプロピレングリコールモノメチルエーテルに溶解させ、溶液状態とした。
上記比較例1で得られたポリマー溶液0.43g(固形分:16.4重量%)に、テトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製)0.02g、プロピレングリコールモノメチルエーテル44.5g及びプロピレングリコールモノメチルエーテルアセテート4.99gを加え溶解させた。その後孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過して、リソグラフィー用レジスト下層膜形成組成物とした。
上記比較合成例1で得られたポリマー溶液0.47g(固形分:20.0重量%)に、テトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製)0.02g、ピリジニウムフェノールスルホン酸0.003g、プロピレングリコールモノメチルエーテル44.6g及びプロピレングリコールモノメチルエーテルアセテート4.99gを加え溶解させた。その後孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過して、リソグラフィー用レジスト下層膜形成組成物とした。
実施例2、実施例4、実施例5、実施例6、比較例2及び比較例3のレジスト下層膜形成組成物を、それぞれ、スピナーにより、半導体基板であるシリコンウェハー上に塗布した。そのシリコンウェハーをホットプレート上に配置し、205℃で1分間ベークし、レジスト下層膜(膜厚5nm)を形成した。これらのレジスト下層膜をフォトレジストに使用する溶剤である乳酸エチル及びプロピレングリコールモノメチルエーテルに浸漬し、膜厚変化が1Å未満である場合に良、1Å以上である場合に不良として、その結果を表1に示す。
実施例2、実施例4、実施例5、実施例6及び比較例3のレジスト下層膜形成組成物を、スピナーを用いてシリコンウェハー上にそれぞれ塗布した。そのシリコンウェハーを、ホットプレート上で205℃、60秒間ベークし、膜厚5nmのレジスト下層膜を得た。そのレジスト下層膜上に、EUV用ポジ型レジスト溶液(メタクリルポリマー含有)をスピンコートし、130℃で60秒間加熱し、EUVレジスト膜を形成した。そのレジスト膜に対し、電子線描画装置(ELS-G130)を用い、所定の条件で露光した。露光後、100℃で60秒間ベーク(PEB)を行い、クーリングプレート上で室温まで冷却し、アルカリ現像液(2.38%TMAH)で現像した後、26nmピラーパターン/52nmピッチのレジストパターンを形成した。レジストパターンの測長には走査型電子顕微鏡((株)日立ハイテクノロジーズ製、CG4100)を用いた。このようにして得られたフォトレジストパターンについて、パターン上部からの観察を行い、評価した。上記レジストパターンの形成において、ピラーパターンを形成できた場合は「良好」、ピラーパターンが倒れもしくは剥がれが見られた場合には「不良」と示した。また、CDサイズ26nmのピラーパターンを形成するのに必要露光量を比較した。
Claims (14)
- 末端に酸化合物を担持したポリマー、及び溶剤を含む、レジスト下層膜形成組成物。
- 前記酸化合物が、ポリマー末端に存在する塩基とイオン結合している、請求項1に記載のレジスト下層膜形成組成物。
- 前記Bが、窒素原子を含む、請求項3に記載のレジスト下層膜形成組成物。
- 前記Bが、R1R2R3Nであり、
R1、及びR2はそれぞれ独立に、置換されていてもよい直鎖、若しくは分岐の飽和、若しくは不飽和の脂肪族炭化水素基を表し、
R1とR2とはヘテロ原子を介して、若しくはヘテロ原子を介さずに環を形成していてもよく、
R3は置換されていてもよい芳香族基、又は置換されていてもよい直鎖、若しくは分岐の飽和、若しくは不飽和の脂肪族炭化水素基を表し、
R1とR2が環を形成していないとき、R3は置換されていてもよい芳香族基である、
請求項3又は4に記載のレジスト下層膜形成組成物。 - 前記Bが、
[式中、
R1、及びR2はそれぞれ独立に、置換されていてもよい直鎖、若しくは分岐の飽和、若しくは不飽和の脂肪族炭化水素基を表し、
R3は置換されていてもよい芳香族基を表す。]、又は
下記式(II)
[式(II)中、
Rは、水素原子、ニトロ基、シアノ基、アミノ基、カルボキシル基、ハロゲン原子、炭素数1~10のアルコキシ基、炭素数1~10のアルキル基、炭素数2~10のアルケニル基、炭素数6~40のアリール基、エーテル結合を含む有機基、ケトン結合を含む有機基、エステル結合を含む有機基、またはそれらを組み合わせた基であり、
R’は、
であり、
Ra及びRbはそれぞれ独立して、任意に置換されたアルキルを表し、
XはO、S、またはSO2であり、
n、及びmはそれぞれ独立に2、3、4、5、又は6である。]
で表される塩基である、請求項3又は4に記載のレジスト下層膜形成組成物。 - 前記ポリマーが、下記式(1):
〔式中、A1、A2、A3、A4、A5、及びA6は、それぞれ、水素原子、メチル基またはエチル基を表し、X1は式(2)、式(3)、式(4)、又は式(0):
(式中R1及びR2はそれぞれ、水素原子、ハロゲン原子、炭素原子数1~6のアルキル基、炭素原子数3~6のアルケニル基、ベンジル基またはフェニル基を表し、そして、前記炭素原子数1~6のアルキル基、炭素原子数3~6のアルケニル基、ベンジル基及びフェニル基は、炭素原子数1~6のアルキル基、ハロゲン原子、炭素原子数1~6のアルコキシ基、ニトロ基、シアノ基、ヒドロキシ基、カルボキシル基及び炭素原子数1~6のアルキルチオ基からなる群から選ばれる基で置換されていてもよく、また、R1とR2は互いに結合して炭素原子数3~6の環を形成していてもよく、R3はハロゲン原子、炭素原子数1~6のアルキル基、炭素原子数3~6のアルケニル基、ベンジル基またはフェニル基を表し、そして、前記フェニル基は、炭素原子数1~6のアルキル基、ハロゲン原子、炭素数1~6のアルコキシ基、ニトロ基、シアノ基、ヒドロキシ基、及び炭素原子数1~6のアルキルチオ基からなる群から選ばれる基で置換されていてもよい)を表し、Qは式(5)または式(6):
(式中Q1は炭素原子数1~10のアルキレン基、フェニレン基、ナフチレン基、またはアントリレン基を表し、そして、前記アルキレン基、フェニレン基、ナフチレン基、及びアントリレン基は、それぞれ、炭素原子数1~6のアルキル基、炭素原子数2~7のカルボニルオキシアルキル基、ハロゲン原子、炭素原子数1~6のアルコキシ基、フェニル基、ニトロ基、シアノ基、ヒドロキシ基、炭素原子数1~6のアルキルチオ基、ジスルフィド基を有する基、カルボキシル基又はそれらの組み合わせからなる基で置換されていてもよく、前記アルキレン基は、ジスルフィド結合で中断されていてもよく、n1及びn2はそれぞれ0または1の数を表し、X2は式(2)、式(3)、又は式(0)を表す)を表す〕で表される繰り返し単位構造を有するポリマーである、請求項1~8の何れか1項に記載のレジスト下層膜形成組成物。 - 架橋剤をさらに含む、請求項1~9の何れか1項に記載のレジスト下層膜形成組成物。
- 酸発生剤をさらに含む、請求項1~10の何れか1項に記載のレジスト下層膜形成組成物。
- 請求項1~11に記載のレジスト下層膜形成組成物からなる塗布膜の焼成物であることを特徴とするレジスト下層膜。
- 半導体基板上に請求項1~11何れか1項に記載のレジスト下層膜形成組成物を塗布しベークしてレジスト下層膜を形成する工程、
前記レジスト下層膜上にレジストを塗布しベークしてレジスト膜を形成する工程、
前記レジスト下層膜と前記レジストで被覆された半導体基板を露光する工程、
露光後の前記レジスト膜を現像し、パターニングする工程
を含む、パターニングされた基板の製造方法。 - 半導体基板上に、請求項1~11何れか1項に記載のレジスト下層膜形成組成物からなるレジスト下層膜を形成する工程と、
前記レジスト下層膜の上にレジスト膜を形成する工程と、
レジスト膜に対する光又は電子線の照射とその後の現像によりレジストパターンを形成する工程と、
形成された前記レジストパターンを介して前記レジスト下層膜をエッチングすることによりパターン化されたレジスト下層膜を形成する工程と、
パターン化された前記レジスト下層膜により半導体基板を加工する工程と、
を含むことを特徴とする、半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020237033813A KR20230157996A (ko) | 2021-03-15 | 2022-03-14 | 산촉매 담지형 폴리머를 포함하는 레지스트 하층막 형성 조성물 |
JP2023507080A JPWO2022196606A1 (ja) | 2021-03-15 | 2022-03-14 | |
CN202280021419.8A CN117015746A (zh) | 2021-03-15 | 2022-03-14 | 包含酸催化剂负载型聚合物的抗蚀剂下层膜形成用组合物 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021041584 | 2021-03-15 | ||
JP2021-041584 | 2021-03-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2022196606A1 true WO2022196606A1 (ja) | 2022-09-22 |
Family
ID=83320365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2022/011190 WO2022196606A1 (ja) | 2021-03-15 | 2022-03-14 | 酸触媒担持型ポリマーを含むレジスト下層膜形成組成物 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2022196606A1 (ja) |
KR (1) | KR20230157996A (ja) |
CN (1) | CN117015746A (ja) |
TW (1) | TW202242552A (ja) |
WO (1) | WO2022196606A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023189803A1 (ja) * | 2022-03-28 | 2023-10-05 | 日産化学株式会社 | レジスト下層膜形成組成物 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010071155A1 (ja) * | 2008-12-19 | 2010-06-24 | 日産化学工業株式会社 | アニオン基を有するシリコン含有レジスト下層膜形成組成物 |
WO2011018928A1 (ja) * | 2009-08-10 | 2011-02-17 | 日産化学工業株式会社 | ポリマー型の光酸発生剤を含有するレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
JP2012022191A (ja) * | 2010-07-15 | 2012-02-02 | Nissan Chem Ind Ltd | イオン性重合体を含むレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
WO2015163195A1 (ja) * | 2014-04-25 | 2015-10-29 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9623988B2 (en) | 2010-03-26 | 2017-04-18 | Philip Morris Usa Inc. | High speed poucher |
-
2022
- 2022-03-14 TW TW111109219A patent/TW202242552A/zh unknown
- 2022-03-14 CN CN202280021419.8A patent/CN117015746A/zh active Pending
- 2022-03-14 KR KR1020237033813A patent/KR20230157996A/ko unknown
- 2022-03-14 WO PCT/JP2022/011190 patent/WO2022196606A1/ja active Application Filing
- 2022-03-14 JP JP2023507080A patent/JPWO2022196606A1/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010071155A1 (ja) * | 2008-12-19 | 2010-06-24 | 日産化学工業株式会社 | アニオン基を有するシリコン含有レジスト下層膜形成組成物 |
WO2011018928A1 (ja) * | 2009-08-10 | 2011-02-17 | 日産化学工業株式会社 | ポリマー型の光酸発生剤を含有するレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
JP2012022191A (ja) * | 2010-07-15 | 2012-02-02 | Nissan Chem Ind Ltd | イオン性重合体を含むレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
WO2015163195A1 (ja) * | 2014-04-25 | 2015-10-29 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023189803A1 (ja) * | 2022-03-28 | 2023-10-05 | 日産化学株式会社 | レジスト下層膜形成組成物 |
Also Published As
Publication number | Publication date |
---|---|
CN117015746A (zh) | 2023-11-07 |
TW202242552A (zh) | 2022-11-01 |
JPWO2022196606A1 (ja) | 2022-09-22 |
KR20230157996A (ko) | 2023-11-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2023126803A (ja) | 脂環式化合物末端の重合体を含むレジスト下層膜形成組成物 | |
WO2022196606A1 (ja) | 酸触媒担持型ポリマーを含むレジスト下層膜形成組成物 | |
JP7355012B2 (ja) | グリシジルエステル化合物との反応生成物を含むレジスト下層膜形成組成物 | |
WO2022172917A1 (ja) | アリール基で封止された側鎖含有ポリマーを含むレジスト下層膜形成組成物 | |
WO2022196662A1 (ja) | レジスト下層膜形成組成物 | |
WO2022025090A1 (ja) | ヒダントイン化合物の反応生成物を含むレジスト下層膜形成組成物 | |
WO2022071468A1 (ja) | 末端封止された反応生成物を含むレジスト下層膜形成組成物 | |
JP2021105703A (ja) | イオン液体を含むレジスト下層膜形成組成物 | |
WO2022202644A1 (ja) | 保護された塩基性の有機基を有するレジスト下層膜形成組成物 | |
WO2023145703A1 (ja) | 末端封止ポリマーを含むレジスト下層膜形成組成物 | |
WO2024075720A1 (ja) | レジスト下層膜形成用組成物 | |
WO2022163602A1 (ja) | 脂環式炭化水素基を有するポリマーを含むレジスト下層膜形成組成物 | |
JP7468645B2 (ja) | ジオール構造を含むレジスト下層膜形成用組成物 | |
WO2023120616A1 (ja) | サッカリン骨格を有するレジスト下層膜形成用組成物 | |
WO2022019248A1 (ja) | Euvレジスト下層膜形成組成物 | |
WO2022196673A1 (ja) | ナフタレンユニット含有レジスト下層膜形成組成物 | |
TW202248271A (zh) | 具有多重鍵之膜形成組成物 | |
JP2024069252A (ja) | レジスト下層膜形成組成物 | |
JP2024073468A (ja) | レジスト下層膜形成組成物 | |
WO2023085295A1 (ja) | アルコキシ基含有レジスト下層膜形成用組成物 | |
WO2023026934A1 (ja) | レジスト下層膜形成組成物 | |
WO2022039246A1 (ja) | Euvレジスト下層膜形成組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 22771352 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2023507080 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 202280021419.8 Country of ref document: CN |
|
ENP | Entry into the national phase |
Ref document number: 20237033813 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020237033813 Country of ref document: KR |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 22771352 Country of ref document: EP Kind code of ref document: A1 |