WO2022193399A1 - 光谱选择性热辐射器及其设计方法 - Google Patents

光谱选择性热辐射器及其设计方法 Download PDF

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WO2022193399A1
WO2022193399A1 PCT/CN2021/088345 CN2021088345W WO2022193399A1 WO 2022193399 A1 WO2022193399 A1 WO 2022193399A1 CN 2021088345 W CN2021088345 W CN 2021088345W WO 2022193399 A1 WO2022193399 A1 WO 2022193399A1
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layer
thermal radiator
spectrally selective
selective thermal
reflectivity
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蔡琦琳
吴玺
张蓥石
叶庆
范学良
邓业林
赵威风
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Suzhou University
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    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
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    • G06F2119/08—Thermal analysis or thermal optimisation

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  • the invention relates to the technical field of thermal radiation, in particular to a spectrally selective thermal radiator and a design method thereof.
  • Solar thermal photovoltaic (STPV for short) system is an efficient thermoelectric conversion technology, which can directly convert high-temperature thermal radiation generated by sunlight into electrical energy.
  • STPV system usually consists of four parts: concentrator, absorber, radiator and thermal photovoltaic cell.
  • the temperature of the collected sunlight increases, and the heating radiator emits thermal radiant energy, and the thermal radiant energy falling under the forbidden band width of the thermal photovoltaic cell is converted into electrical energy by the thermal photovoltaic cell.
  • STPV system has high theoretical conversion efficiency and can efficiently utilize solar energy, and has great application prospects in commercial, civil and military fields.
  • Thermal radiators play a crucial role in improving the efficiency of STPV systems, and spectrally selective thermal radiators can greatly improve the overall efficiency of STPV systems.
  • the working temperature of the STPV system is very high (above 1000K), so there is a high requirement for the high temperature stability of the thermal radiator.
  • Most of the existing spectrally selective thermal radiators are structural-type spectrally selective thermal radiators, which tend to experience high-temperature decay phenomena such as structural collapse and material phase transition under high temperature conditions.
  • the purpose of the present invention is to provide a spectrally selective thermal radiator and a design method thereof.
  • the spectrally selective thermal radiator of the present invention includes hafnium oxide and erbium oxide, is resistant to high temperature oxidation, and has selective emission.
  • the design method is accurate and efficient, and the optical performance of the spectrally selective thermal radiator can be calculated according to the doping amount and particle size of erbium oxide nanoparticles.
  • the first object of the present invention is to disclose a spectrally selective thermal radiator as a one-dimensional layered structure, which includes a first layer, a second layer and a third layer arranged in sequence, the first layer and the third layer Both are hafnium oxide (HfO 2 ) layers, and the second layer is a hafnium oxide layer in which a plurality of erbium oxide (Er 2 O 3 ) nanoparticles are distributed.
  • the spectrally selective heat radiator of the present invention is a material-type heat radiator, which has very high thermal stability, is resistant to high temperature (1000-2500°C) oxidation, and can fundamentally Eliminate the problem of high temperature recession existing in the structural heat radiator.
  • the material of the spectrally selective thermal radiator of the present invention includes two oxides, the decay phenomenon such as high-temperature oxidation will not occur, and the spectrally selective emission can be maintained while having extremely high thermal stability.
  • the particle size of the erbium oxide nanoparticles is 5-30 nm.
  • the spectrally selective thermal radiator further includes a base layer, and the base layer is made of molybdenum, tungsten, tantalum or silicon.
  • the base layer is arranged on one side surface of the first layer or the third layer.
  • the thickness of the first layer and the third layer is 50-200 nm, and the thickness of the second layer is 300-500 nm.
  • the first layer and the third layer are mainly used to isolate the influence of the substrate and the environment on the second layer, that is, the thickness should not be too large, and it can play a protective role;
  • the second layer is a doped layer, and a certain thickness is required to ensure the amount of doping , the thickness should not exceed 500nm due to cost and optical performance considerations.
  • the absorption wavelength and/or reflection wavelength of the spectrally selective thermal radiator is in the range of 400nm-5000nm.
  • the spectrally selective thermal radiator of the present invention has a selective emissivity in a corresponding wavelength range, that is, a high emissivity in a specified wavelength band, while the emissivity in an undesired wavelength band is suppressed.
  • the reason why the spectrally selective thermal radiator of the present invention has the above-mentioned properties is that:
  • Er 2 O 3 nanoparticles have high emission in the short-wave range, and the reflectivity of the spectrally selective thermal radiator can be adjusted by adjusting the amount thereof;
  • the spectrally selective thermal radiator of the present invention has a multi-layer structure, and this composite layer structure has a light interference effect;
  • the particle size of Er 2 O 3 nanoparticles in a suitable range can change the optical properties of the film and produce the desired emission spectrum.
  • the second object of the present invention is to disclose a design method for the above-mentioned spectrally selective thermal radiator, which is used to design the doping amount and particle size of erbium oxide nanoparticles in the second layer, and specifically includes the following steps:
  • step 1) using the refractive indices n 1 and n 2 of the hafnium oxide and erbium oxide nanoparticles, the dielectric constants ⁇ 1 and ⁇ 2 of the two materials are calculated respectively.
  • step 1) 0 ⁇ f v ⁇ 1.
  • the doping amount f v V 2 /(V 1 +V 2 ), wherein V 1 is the volume of the erbium oxide particles in the doped layer, and V 2 is the volume of the hafnium oxide particles in the doped layer.
  • the absorptivity and/or reflectivity of the spectrally selective thermal radiator is calculated by a transfer matrix method.
  • the transmission matrix method is used to calculate the spectral characteristics of the thermal radiator after doped particles. This method is simple and easy to understand and has a wide range of applications. It can improve the accuracy and efficiency of the spectral characteristics design of the thermal radiator, and can further reduce the spectral selectivity of the thermal radiator.
  • the research and development cost of the new heat radiator provides a basis for the design and development of new heat radiator materials.
  • the optical properties of the spectrally selective thermal radiator can be designed, so that the finally designed spectrally selective thermal radiator has selective emissivity in the corresponding wavelength range. It can reveal the variation law of the spectral emission characteristics of the selective thermal radiator with the doping amount of erbium oxide nanoparticles and the size of the erbium oxide nanoparticles, and provide an important basis for the preparation of material-based spectral selective thermal radiators.
  • the present invention has at least the following advantages:
  • the materials used in the material-type spectrally selective thermal radiator designed by the present invention are all oxide materials.
  • the oxide materials have extremely high thermal stability and are not prone to chemical reaction changes at high temperatures.
  • the invention adopts computer-aided calculation technology, which can effectively overcome the problem of complicated design and manufacture, and uses computer simulation to calculate the optimal ratio of the doping amount and the radius of the doping particle, which greatly improves the design efficiency of the heat radiator and reduces the production cost. cost.
  • the optical constant of hafnium oxide doped erbium oxide particles is calculated by using effective medium theory. This calculation method has the characteristics of accurate calculation, scientific and high efficiency in the calculation of photoelectric properties after doped particles, and can comprehensively calculate the material's optical constant. Variation of photoelectric constant with erbium oxide doping amount and doping particle size.
  • Fig. 1 is the cross-sectional structure schematic diagram of the spectrally selective thermal radiator in the present invention
  • Fig. 2 is the design flow chart of the spectrally selective thermal radiator in the present invention
  • Fig. 3 is the relation diagram of the doping amount of erbium oxide nanoparticles and the refractive index in the present invention
  • Fig. 4 is the relation diagram of the doping amount and extinction coefficient of erbium oxide nanoparticles in the present invention.
  • Fig. 5 is the relation diagram of the doping amount of erbium oxide nanoparticles and the spectral performance in the present invention
  • connection and “installation” should be understood in a broad sense, for example, it may be a fixed connection, a detachable connection, or an integrated connection. It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal communication between the two components.
  • connection and “installation” should be understood in a broad sense, for example, it may be a fixed connection, a detachable connection, or an integrated connection. It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal communication between the two components.
  • connection and “installation” should be understood in a broad sense, for example, it may be a fixed connection, a detachable connection, or an integrated connection. It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal communication between the two components.
  • connection and “installation” should be understood in a broad sense,
  • a material-based spectrally selective thermal radiator is a one-dimensional layered structure, which consists of a first layer 1 , a second layer 2 , a third layer 3 and a substrate arranged in sequence from top to bottom 4, wherein the first layer 1 and the third layer 3 are both hafnium oxide layers, and the second layer 2 is a hafnium oxide layer in which a plurality of erbium oxide nanoparticles 5 are distributed.
  • the thickness of the first layer 1 and the third layer 3 is 100 nm, and the thickness of the second layer 2 is 400 nm.
  • the substrate 4 is a molybdenum substrate, and its dimensions are 10 mm ⁇ 10 mm ⁇ 0.3 mm.
  • the preparation method of the material-type hafnium oxide doped erbium oxide particle spectrally selective thermal radiator is radio frequency magnetron sputtering, using HfO 2 and Er 2 O 3 targets with a purity of 99.99%, and the vacuum degree of the sputtering chamber is 1 ⁇ 10 -7 Torr, Ar gas flow was 4 mTorr, and sputtering power was 150W.
  • the optical constants of the functional layer doped with nanoparticles are usually difficult to determine, which is not conducive to the subsequent calculation of the overall optical properties of the thermal radiator. Therefore, using the effective medium theory and the transfer matrix method to calculate the variation of the optical properties of the spectrally selective thermal radiator doped with nanoparticles with the doping amount and particle size of the nanoparticles in the functional layer can effectively reflect the overall optical properties of the radiator. changes in characteristics, and predict the future performance of thermal radiators.
  • the present invention discloses a design method for the material-based spectrally selective thermal radiator in Example 1, as shown in FIG. 2 , including the following steps:
  • the design method of the above-mentioned material-based spectrally selective thermal radiator is as follows:
  • ne and extinction coefficient ke of the second layer are calculated, where ⁇ e1 is the real part of the permittivity ⁇ e and ⁇ e2 is the imaginary part of the permittivity ⁇ e .
  • the calculated ne and ke are shown in Fig. 3 and Fig. 4, respectively.

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Abstract

本发明涉及一种光谱选择性热辐射器及其设计方法，本发明的光谱选择性热辐射器为一维层状结构，其包括依次设置的第一层、第二层和第三层，第一层和第三层均为氧化铪层，第二层为分布有多个氧化铒纳米颗粒的氧化铪层。本发明所设计的热辐射器为材料型光谱选择性热辐射器具有选择性发射率。相较于传统的结构型热辐射器，材料型热辐射器有着非常高的热稳定性，无氧化作用，可从根本上杜绝结构型热辐射器存在的高温衰退问题。本发明具有准确、效率高的特点，能够全面地揭示材料型氧化铪掺杂氧化铒颗粒选择性热辐射器的光谱发射特性随氧化铒掺杂量和氧化铒掺杂颗粒大小的变化规律，并为高温选择性辐射器走上实际应用奠定基础。

Description

光谱选择性热辐射器及其设计方法 技术领域
本发明涉及热辐射技术领域，尤其涉及一种光谱选择性热辐射器及其设计方法。
背景技术
太阳能热光伏(简称STPV)系统是一种高效的热电转换技术，可以直接将由太阳光所产生的高温热辐射转化为电能。STPV系统通常由聚光器、吸收器、辐射器和热光伏电池四大部分组成，其基本原理为：太阳光打到聚光器上后被聚光器聚集并发射至吸收器，吸收器吸收所聚集的太阳光温度升高加热辐射器发出热辐射能，落在热光伏电池禁带宽度下的热辐射能被热光伏电池转换为电能。STPV系统理论转化效率高，可高效利用太阳能，在商业、民用和军事领域具有很大的应用前景。
热辐射器对于提升STPV系统的效率有着至关重要的作用，光谱选择性热辐射器可以极大地提高STPV系统的整体效率。STPV系统的工作温度很高(1000K以上)，因此对热辐射器的高温稳定性有着很高的要求。现有的光谱选择性热辐射器多为结构型光谱选择性热辐射器，该类型的热辐射器在高温状态下往往会发生如结构崩塌、材料发生相变等多种因素的高温衰退现象。
因此，开发新型的材料型光谱选择性热辐射器及其设计方法十分必要。
发明内容
为解决上述技术问题，本发明的目的是提供一种光谱选择性热辐射器及其设计方法，本发明的光谱选择性热辐射器包括氧化铪和氧化铒，抗高温氧化，且具有选择性发射率，其设计方法准确、高效，能够根据氧化铒纳米颗粒的掺杂量和粒径计算出光谱选择性热辐射器的光学性能。
为达到上述目的，本发明采用的技术方案如下：
本发明的第一个目的是公开一种光谱选择性热辐射器为一维层状结构，其包括依次设置的第一层、第二层和第三层，所述第一层和第三层均为氧化铪(HfO 2)层，所述第二层为分布有多个氧化铒(Er 2O 3)纳米颗粒的氧化铪层。
相较于传统的结构型热辐射器，本发明的光谱选择性热辐射器为材料型热辐射器，其具有非常高的热稳定性，抗高温(1000-2500℃)氧化，可从根本上杜绝结构型热辐射器存在的 高温衰退问题。
由于本发明的光谱选择性热辐射器的材质包括两种氧化物，不会发生高温氧化等衰退现象，可以在保持光谱选择性发射的同时又具有极高的热稳定性。
进一步地，氧化铒纳米颗粒的粒径为5-30nm。
进一步地，光谱选择性热辐射器还包括基底层，所述基底层的材质为钼、钨、钽或硅。基底层设于第一层或第三层的一侧表面。
进一步地，第一层和第三层的厚度为50-200nm，所述第二层的厚度为300-500nm。第一层和第三层主要用于隔断基底和环境对第二层的影响，即厚度不宜过大，能起到保护作用即可；第二层为掺杂层，需要一定厚度保证掺杂量，出于成本和光学性能考虑厚度不宜超过500nm。
进一步地，光谱选择性热辐射器的吸收波长和/或反射波长的范围为400nm-5000nm。
本发明的光谱选择性热辐射器在相应波长范围内具有选择性发射率，即在指定波段内具有很高的发射率，而在无用的波段的发射率则受到抑制。本发明的光谱选择性热辐射器具有上述性能的原因在于：
(1)Er 2O 3纳米颗粒在短波范围内具有高发射性，通过调节其用量，可调节光谱选择性热辐射器的反射性；
(2)本发明的光谱选择性热辐射器具有多层结构，这种复合的层结构具有光干涉效应；
(3)Er 2O 3纳米颗粒的粒径在合适范围内可以改变薄膜的光学特性，并产生期望的发射光谱。
本发明的第二个目的是公开一种上述光谱选择性热辐射器的设计方法，该设计方法用于设计第二层中氧化铒纳米颗粒的掺杂量及其粒径，具体包括以下步骤：
1)分别获取氧化铪和氧化铒纳米颗粒的介电常数ε 1和ε 2；并确定第二层中氧化铒纳米颗粒的掺杂量f v及氧化铒纳米颗粒的半径r；
2)根据公式
Figure PCTCN2021088345-appb-000001
获取第二层的介电常数ε e；
3)根据公式
Figure PCTCN2021088345-appb-000002
和
Figure PCTCN2021088345-appb-000003
分别获取第二层的折射率n e和消光系数k e，其中，ε e1是介电常数ε e的实部，ε e2是介电常数ε e的虚部；
4)计算所述光谱选择性热辐射器的吸收率和/或反射率等光学特性，得到计算值；
5)将所计算出的吸收率和/或反射率与预设的吸收率和/或反射率进行比较，如果计算出 的吸收率和/或反射率与预设的吸收率和/或反射率相同，则直接进行步骤6)；如果计算出的吸收率和/或反射率与预设的吸收率和/或反射率不同，则修改步骤1)中的氧化铒纳米颗粒的掺杂量f v及氧化铒纳米颗粒的半径r，然后重复执行步骤2)-4)，直至计算出的吸收率和/或反射率与预设的吸收率和/或反射率相同；
6)输出光谱选择性热辐射器的光学特性曲线与第二层中氧化铒纳米颗粒的掺杂量f v之间的关系曲线。
进一步地，在步骤1)中，利用氧化铪和氧化铒纳米颗粒的折射率n 1和n 2，分别计算出两种材料的介电常数ε 1和ε 2。
进一步地，在步骤1)中，0＜f v＜1。
本发明中，掺杂量f v＝V 2/(V 1+V 2)，其中V 1为氧化铒颗粒占掺杂层的体积，V 2为氧化铪颗粒占掺杂层的体积。
进一步地，在步骤2)中，
Figure PCTCN2021088345-appb-000004
其中，
Figure PCTCN2021088345-appb-000005
i代表虚数，ω代表角速度，
Figure PCTCN2021088345-appb-000006
代表xj 1(x)，ξ(x)代表xh 1 (1)(x)，j 1(x)代表一阶球面贝塞尔函数，h 1 (1)(x)代表第一类汉克尔函数，
Figure PCTCN2021088345-appb-000007
代表
Figure PCTCN2021088345-appb-000008
的一阶导数，ξ’(x)代表ξ(x)的一阶导数，x＝x 1或x 2。
进一步地，在步骤4)中，通过传输矩阵法计算所述光谱选择性热辐射器的吸收率和/或反射率。采用传输矩阵法计算掺杂颗粒后热辐射器的光谱特性，该方法简单易懂、适用范围广，能够提高热辐射器的光谱特性设计的准确性和效率，可进一步降低光谱选择性热辐射器的研发成本，为新型热辐射器材料的设计研发提供基础。
通过上述设计方法，可设计光谱选择性热辐射器的光学性能，使得最终设计的光谱选择性热辐射器在相应波长范围内具有选择性发射率。能够揭示选择性热辐射器的光谱发射特性随氧化铒纳米颗粒掺杂量和氧化铒纳米颗粒大小的变化规律，为材料型光谱选择性热辐射器的制备提供重要依据。
借由上述方案，本发明至少具有以下优点：
1.本发明所设计的材料型光谱选择性热辐射器所采用的材料均为氧化物材料，氧化物材料具有极高的热稳定性，在高温下不易发生化学反应变化。
2.本发明采用计算机辅助计算技术，可以有效克服设计制造繁琐的问题，用计算机仿真 模拟计算掺杂量和掺杂颗粒半径大小的最佳配比，大幅提高热辐射器的设计效率，降低制备成本。
3.采用有效介质理论计算氧化铪掺杂氧化铒颗粒后的光学常数，该计算方法在掺杂颗粒后的光电特性计算中具有计算准确、科学、效率高的特点，能够全面地计算出材料的光电常数随氧化铒掺杂量和掺杂颗粒大小的变化规律。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，并可依照说明书的内容予以实施，以下以本发明的较佳实施例并配合详细附图说明如后。
附图说明
图1是本发明中光谱选择性热辐射器的剖面结构示意图；
图2是本发明中光谱选择性热辐射器的设计流程图；
图3是本发明中氧化铒纳米颗粒的掺杂量与折射率关系图；
图4是本发明中氧化铒纳米颗粒的掺杂量与消光系数关系图；
图5是本发明中氧化铒纳米颗粒的掺杂量与光谱性能关系图；
附图标记说明：
1-第一层；2-第二层；3-第三层；4-基底；5-氧化铒纳米颗粒。
具体实施方式
在本发明的描述中，需要说明的是，术语“上”、“下”、“水平”、“左”、“右”、“前”、“后”等指示的方位或位置关系均为基于附图所示的方位或位置关系，仅仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”、“第四”仅用于描述目的，而不能理解为指示或暗示相对重要性。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“连接”、“安装”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
下面结合实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
实施例1
如图1所示，一种材料型光谱选择性热辐射器，其为一维层状结构，其由自上而下依次设置的第一层1、第二层2、第三层3和基底4组成，其中，第一层1和第三层3均为氧化铪层，第二层2为分布有多个氧化铒纳米颗粒5的氧化铪层。第一层1和第三层3的厚度为100nm，第二层2的厚度为400nm。基底4为钼基底，其尺寸为10mm×10mm×0.3mm。氧化铒纳米颗粒的粒径r＝20nm，其在第二层中的掺杂量f v＝0.1、0.3或0.5。
该材料型氧化铪掺杂氧化铒颗粒光谱选择性热辐射器的制备方法为射频磁控溅射，使用纯度为99.99％的HfO 2和Er 2O 3靶材，溅射室真空度为1×10 -7Torr，Ar气流量为4mTorr，溅射功率为150W。
实施例2
由于材料型光谱选择性热辐射器中，掺杂有纳米颗粒的功能层的光学常数通常很难确定，不利于后续热辐射器整体光学特性的计算。因此，采用有效介质理论和传输矩阵法计算掺杂有纳米颗粒的光谱选择性热辐射器的光学特性随功能层中纳米颗粒的掺杂量和颗粒大小的变化规律，可以有效反映辐射器整体光学特性的变化，并且预测热辐射器未来的使用性能。
基于此，本发明公开了一种实施例1中的材料型光谱选择性热辐射器的设计方法，如图2所示，包括以下步骤：
1)确定氧化铪(HfO 2)的折射率n 1和氧化铒(Er 2O 3)纳米颗粒的折射率n 2，分别计算出HfO 2的介电常数ε 1和Er 2O 3纳米颗粒的介电常数ε 2。
2)确定Er 2O 3纳米颗粒的掺杂量f v。
3)确定Er 2O 3纳米颗粒的半径r。
4)根据公式
Figure PCTCN2021088345-appb-000009
计算第二层的介电常数ε e。其中，
Figure PCTCN2021088345-appb-000010
其中，
Figure PCTCN2021088345-appb-000011
Figure PCTCN2021088345-appb-000012
代表xj 1(x)，ξ(x)代表xh 1 (1)(x)，j 1(x)代表一阶球面贝塞尔函数，h 1 (1)(x)代表第一类汉克尔函数，
Figure PCTCN2021088345-appb-000013
代表
Figure PCTCN2021088345-appb-000014
的一阶导数，ξ’(x)代表ξ(x)的一阶导数，x＝x 1或x 2。
5)根据公式
Figure PCTCN2021088345-appb-000015
计算出第二层的折射率n e和消光系数k e，其中，ε e1是介电常数ε e的实部，ε e2是介电常数ε e的虚部。
6)计算光谱选择性热辐射器的吸收率、反射率等光学特性。
7)检测所计算出的光谱选择性热辐射器的吸收率、反射率等光学特性是否符合设计要求，如果不符合设计要求，则修改步骤2)和步骤3)中的掺杂量f v和掺杂颗粒半径r，然后重复执行步骤4)-6)，直至结果符合设计要求。
8)输出光学特性曲线与掺杂量f v之间的关系曲线。
作为一种具体实施例方式，上述材料型光谱选择性热辐射器的设计方法如下：
1)选择氧化铪(HfO 2)和氧化铒(Er 2O 3)的折射率n 1＝1.8-2.2、n 2＝1.78-1.83，计算出两种材料的介电常数ε 1＝3.24-4.84、ε 2＝3.17-3.35。
2)确定Er 2O 3的掺杂量f v＝0.1、0.3或0.5。
3)确定Er 2O 3的掺杂颗粒半径r＝20nm。
4)根据公式
Figure PCTCN2021088345-appb-000016
计算第二层的介电常数ε e。其中α r如上文所述方式计算。
5)根据公式
Figure PCTCN2021088345-appb-000017
计算出第二层的折射率n e和消光系数k e，ε e1是介电常数ε e的实部，ε e2是介电常数ε e的虚部。所计算出的n e和k e分别如图3和图4所示。
6)计算热辐射器的吸收率、反射率等光学特性。
7)检测所计算出的热辐射器吸收率、反射率等光学特性是否符合设计要求，如果不符合设计要求，则修改步骤2)和步骤3)中的掺杂量f v和掺杂颗粒半径r，然后重复执行步骤4)-步骤6)，直至结果符合设计要求。
8)输出光学特性曲线与掺杂量f v之间的关系曲线，如图5所示。
以上所述仅是本发明的优选实施方式，并不用于限制本发明，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和变型，这些改进和变型也应视为本发明的保护范围。

Claims (10)

  1. 一种光谱选择性热辐射器，其特征在于：包括依次设置的第一层、第二层和第三层，所述第一层和第三层均为氧化铪层，所述第二层为分布有多个氧化铒纳米颗粒的氧化铪层。
  2. 根据权利要求1所述的光谱选择性热辐射器，其特征在于：所述氧化铒纳米颗粒的粒径为5-30nm。
  3. 根据权利要求1所述的光谱选择性热辐射器，其特征在于：还包括基底层，所述基底层的材质为钼、钨、钽或硅。
  4. 根据权利要求1所述的光谱选择性热辐射器，其特征在于：所述第一层和第三层的厚度为50-100nm，所述第二层的厚度为200-500nm。
  5. 根据权利要求1所述的光谱选择性热辐射器，其特征在于：所述光谱选择性热辐射器的吸收波长和/或反射波长的范围为400nm-5000nm。
  6. 一种权利要求1-5中任一项所述的光谱选择性热辐射器的设计方法，其特征在于，包括以下步骤：
    1)分别获取氧化铪和氧化铒纳米颗粒的介电常数ε 1和ε 2；并确定第二层中氧化铒纳米颗粒的掺杂量f v及氧化铒纳米颗粒的半径r；
    2)根据公式
    Figure PCTCN2021088345-appb-100001
    获取第二层的介电常数ε e；
    3)根据公式
    Figure PCTCN2021088345-appb-100002
    和
    Figure PCTCN2021088345-appb-100003
    分别获取第二层的折射率n e和消光系数k e，其中，ε e1是介电常数ε e的实部，ε e2是介电常数ε e的虚部；
    4)计算所述光谱选择性热辐射器的吸收率和/或反射率，得到计算值；
    5)将所计算出的吸收率和/或反射率与预设的吸收率和/或反射率进行比较，如果计算出的吸收率和/或反射率与预设的吸收率和/或反射率相同，则直接进行步骤6)；如果计算出的吸收率和/或反射率与预设的吸收率和/或反射率不同，则修改步骤1)中的氧化铒纳米颗粒的掺杂量f v及氧化铒纳米颗粒的半径r，然后重复执行步骤2)-4)，直至计算出的吸收率和/或反射率与预设的吸收率和/或反射率相同；
    6)输出光谱选择性热辐射器的光学特性曲线与第二层中氧化铒纳米颗粒的掺杂量f v之间的关系曲线。
  7. 根据权利要求6所述的设计方法，其特征在于：在步骤1)中，利用氧化铪和氧化铒纳米颗粒的折射率n 1和n 2，分别计算出两种材料的介电常数ε 1和ε 2。
  8. 根据权利要求6所述的设计方法，其特征在于：在步骤1)中，0＜f v＜1。
  9. 根据权利要求6所述的设计方法，其特征在于：在步骤2)中，
    Figure PCTCN2021088345-appb-100004
    其中，
    Figure PCTCN2021088345-appb-100005
    i代表虚数，ω代表角速度，
    Figure PCTCN2021088345-appb-100006
    代表xj 1(x)，ξ(x)代表xh 1 (1)(x)，j 1(x)代表一阶球面贝塞尔函数，h 1 (1)(x)代表第一类汉克尔函数，
    Figure PCTCN2021088345-appb-100007
    代表
    Figure PCTCN2021088345-appb-100008
    的一阶导数，ξ’(x)代表ξ(x)的一阶导数，x＝x 1或x 2。
  10. 根据权利要求6所述的设计方法，其特征在于：在步骤4)中，通过传输矩阵法计算所述光谱选择性热辐射器的吸收率和/或反射率。
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