WO2022191506A1 - Packaged implant surface modification method using plasma, and packaged implant surface modification system - Google Patents

Packaged implant surface modification method using plasma, and packaged implant surface modification system Download PDF

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Publication number
WO2022191506A1
WO2022191506A1 PCT/KR2022/003041 KR2022003041W WO2022191506A1 WO 2022191506 A1 WO2022191506 A1 WO 2022191506A1 KR 2022003041 W KR2022003041 W KR 2022003041W WO 2022191506 A1 WO2022191506 A1 WO 2022191506A1
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Prior art keywords
implant
plasma
package
chamber
packaging
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PCT/KR2022/003041
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French (fr)
Korean (ko)
Inventor
김정성
신태진
김용화
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주식회사 코렌텍
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Publication of WO2022191506A1 publication Critical patent/WO2022191506A1/en

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    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F2/00Filters implantable into blood vessels; Prostheses, i.e. artificial substitutes or replacements for parts of the body; Appliances for connecting them with the body; Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
    • A61F2/02Prostheses implantable into the body
    • A61F2/30Joints
    • A61F2/30767Special external or bone-contacting surface, e.g. coating for improving bone ingrowth
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61CDENTISTRY; APPARATUS OR METHODS FOR ORAL OR DENTAL HYGIENE
    • A61C13/00Dental prostheses; Making same
    • A61C13/01Palates or other bases or supports for the artificial teeth; Making same
    • A61C13/02Palates or other bases or supports for the artificial teeth; Making same made by galvanoplastic methods or by plating; Surface treatment; Enamelling; Perfuming; Making antiseptic
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61CDENTISTRY; APPARATUS OR METHODS FOR ORAL OR DENTAL HYGIENE
    • A61C8/00Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61CDENTISTRY; APPARATUS OR METHODS FOR ORAL OR DENTAL HYGIENE
    • A61C8/00Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools
    • A61C8/0003Not used, see subgroups
    • A61C8/0004Consolidating natural teeth
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61CDENTISTRY; APPARATUS OR METHODS FOR ORAL OR DENTAL HYGIENE
    • A61C8/00Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools
    • A61C8/0003Not used, see subgroups
    • A61C8/0004Consolidating natural teeth
    • A61C8/0006Periodontal tissue or bone regeneration
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61CDENTISTRY; APPARATUS OR METHODS FOR ORAL OR DENTAL HYGIENE
    • A61C8/00Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools
    • A61C8/0012Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools characterised by the material or composition, e.g. ceramics, surface layer, metal alloy
    • A61C8/0013Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools characterised by the material or composition, e.g. ceramics, surface layer, metal alloy with a surface layer, coating
    • A61C8/0015Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools characterised by the material or composition, e.g. ceramics, surface layer, metal alloy with a surface layer, coating being a conversion layer, e.g. oxide layer
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61CDENTISTRY; APPARATUS OR METHODS FOR ORAL OR DENTAL HYGIENE
    • A61C8/00Means to be fixed to the jaw-bone for consolidating natural teeth or for fixing dental prostheses thereon; Dental implants; Implanting tools
    • A61C8/0087Means for sterile storage or manipulation of dental implants
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F2/00Filters implantable into blood vessels; Prostheses, i.e. artificial substitutes or replacements for parts of the body; Appliances for connecting them with the body; Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F2/00Filters implantable into blood vessels; Prostheses, i.e. artificial substitutes or replacements for parts of the body; Appliances for connecting them with the body; Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
    • A61F2/0095Packages or dispensers for prostheses or other implants
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F2/00Filters implantable into blood vessels; Prostheses, i.e. artificial substitutes or replacements for parts of the body; Appliances for connecting them with the body; Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
    • A61F2/02Prostheses implantable into the body
    • A61F2/30Joints
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F2/00Filters implantable into blood vessels; Prostheses, i.e. artificial substitutes or replacements for parts of the body; Appliances for connecting them with the body; Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
    • A61F2/02Prostheses implantable into the body
    • A61F2/30Joints
    • A61F2/3094Designing or manufacturing processes
    • A61F2/30942Designing or manufacturing processes for designing or making customized prostheses, e.g. using templates, CT or NMR scans, finite-element analysis or CAD-CAM techniques
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61LMETHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L27/00Materials for grafts or prostheses or for coating grafts or prostheses
    • A61L27/02Inorganic materials
    • A61L27/04Metals or alloys
    • A61L27/06Titanium or titanium alloys
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F2/00Filters implantable into blood vessels; Prostheses, i.e. artificial substitutes or replacements for parts of the body; Appliances for connecting them with the body; Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
    • A61F2/02Prostheses implantable into the body
    • A61F2/30Joints
    • A61F2002/30001Additional features of subject-matter classified in A61F2/28, A61F2/30 and subgroups thereof
    • A61F2002/30003Material related properties of the prosthesis or of a coating on the prosthesis
    • A61F2002/30004Material related properties of the prosthesis or of a coating on the prosthesis the prosthesis being made from materials having different values of a given property at different locations within the same prosthesis
    • A61F2002/30031Material related properties of the prosthesis or of a coating on the prosthesis the prosthesis being made from materials having different values of a given property at different locations within the same prosthesis differing in wettability, e.g. in hydrophilic or hydrophobic behaviours
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F2/00Filters implantable into blood vessels; Prostheses, i.e. artificial substitutes or replacements for parts of the body; Appliances for connecting them with the body; Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
    • A61F2/02Prostheses implantable into the body
    • A61F2/30Joints
    • A61F2/30767Special external or bone-contacting surface, e.g. coating for improving bone ingrowth
    • A61F2002/3093Special external or bone-contacting surface, e.g. coating for improving bone ingrowth for promoting ingrowth of bone tissue
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61FFILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F2/00Filters implantable into blood vessels; Prostheses, i.e. artificial substitutes or replacements for parts of the body; Appliances for connecting them with the body; Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
    • A61F2/02Prostheses implantable into the body
    • A61F2/30Joints
    • A61F2/30767Special external or bone-contacting surface, e.g. coating for improving bone ingrowth
    • A61F2002/30934Special articulating surfaces
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61LMETHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2400/00Materials characterised by their function or physical properties
    • A61L2400/18Modification of implant surfaces in order to improve biocompatibility, cell growth, fixation of biomolecules, e.g. plasma treatment

Definitions

  • the present invention relates to a packaged implant surface modification method and a packaged implant surface modification system through plasma, and more particularly, to an implant in a plasma discharge device having a chamber therein and capable of discharging plasma in the chamber.
  • the packaged implant surface modification method and the packaged implant through plasma that can easily adhere to the implant and shorten the osseointegration period to improve the initial stability of the implant and at the same time prevent the implant from being exposed to air and contamination during the surface modification process. It relates to a surface modification system.
  • Dental implants or implants used in artificial joints are fixed to the body and support the movement of the joints around the implant. These implants secure initial stability by mechanical fixation, and secure long-term stability by osseointegration that adheres to the implant or combines with the implant as the bone or surrounding tissue recovers.
  • 1 is a view showing the stability after implantation of the implant. The dotted line in FIG. 1 indicates stability by mechanical fixation of the implant, and the dashed-dotted line indicates stability by osseointegration. Referring to FIG. 1 , although the strength due to mechanical fixation decreases over time, the bone adheres to the surface of the implant and is supported by the bone and surrounding muscle tissue. This ensures long-term stability.
  • the material mainly used for implants is titanium.
  • titanium forms a titanium oxide film on the surface, and the titanium oxide film has the properties of a cathode and thus has hydrophilicity.
  • Hydrophilicity which allows for easy contact with water, can be expressed as a contact angle of a liquid with respect to a metal substrate when any liquid contacts the metal substrate.
  • the contact angle is the angle between the free surface of the liquid and the solid plane when the liquid is in contact with the solid, and is determined by the cohesive force between liquid molecules and the adhesion force between the liquid and the solid.
  • the solid plane When the contact angle between the liquid and the solid plane exceeds 90 ⁇ , the solid plane can be defined as hydrophobicity, which is a property of low affinity for water, and when the liquid and the solid plane's contact angle is less than 90 ⁇ A plane can be defined as hydrophilicity, the property of having an affinity for water.
  • a surface treatment method is required to maintain the hydrophilicity of the surface of the implant.
  • hydrophilic surface modification can be performed by irradiating ultraviolet rays on the titanium surface of the implant.
  • the material of the packaging material must be quartz glass in order for ultraviolet rays to pass through the packaging material surrounding the implant.
  • the implant In the case of a small dental implant, the implant can be placed in a quartz glass housing or case and supplied to the operation room. It has the disadvantages of high cost and poor economic feasibility.
  • implants are supplied while surrounded by a packaging material to prevent contamination.
  • a hydrophilic treatment is performed on the surface of the implant through ultraviolet (UV) light, the sterilization state is released and contamination is caused because the packaging of the implant must be removed.
  • the surface can be modified by colliding particles with high energy in the plasma state onto the surface of the material.
  • Plasma is composed of electrons, ions, and neutral particles (atoms and molecules) generated by applying high temperature and high pressure through glow plasma, arc discharge, etc., which ionizes air by electric discharge by passing electric current through gas in a state close to vacuum. It can be classified as partially ionized thermal plasma, etc., and is an aggregate of charged particles having physical electrical conductivity and collectively reacts to an external electromagnetic field.
  • atoms or molecules can be ionized even at low temperatures.
  • argon (Ar) gas at a pressure of 1 mTorr to 100 Torr, even if there is an electric field of 100 V or more per 1 cm, plasma can be generated.
  • a gas containing oxygen is plasmaized, positive and negative ions, single oxygen atoms, ozone, and ionized oxygen atoms are generated.
  • plasma radical
  • Patent Document 1 Korean Patent Publication No. 10-1196171 (October 24, 2012)
  • the present invention has been devised to solve the above problems,
  • An object of the present invention is an implant providing step of providing an implant package in a plasma discharge device having a conductor electrode and a contact portion provided to allow current to flow with the chamber therein, and providing an implant package in the plasma discharge device provided to discharge plasma in the chamber, the chamber A step of lowering the atmospheric pressure to withdraw air from the chamber through an air outlet connected to a step of lowering the pressure, a step of applying a current to generate plasma by applying a current to the plasma discharge device, and a modifying step in which the discharged plasma reforms the surface of the implant into hydrophilicity,
  • the implant package includes at least one implant and a first package surrounding the implant, wherein the implant is connected to a plasma discharge device and an electric current passes through it so that the surface is modified so that the bone and/or surrounding tissue is easily attached to the implant.
  • An object of the present invention is to provide a method for modifying the implant surface through plasma that can shorten the period of osseointegration by adhesion and improve the initial stability of the implant, and at the same time, prevent the implant from being contaminated by exposure to air during the surface modification of the implant.
  • the method for surface modification of the implant through the plasma further comprises a contact step of connecting the contact portion to the implant so that a current passes before the step of applying the current, the step of applying the current to the conductor electrode and the contact portion
  • An object of the present invention is that the contacting step connects the implant and the contact part in the first package so that an electric current passes through it, so that the implant functions as an electrode while the implant is packaged and the surface is modified through plasma so that the hydrophilicity of the implant does not decrease after the surface modification.
  • An object of the present invention is to provide a method for surface modification of an implant.
  • An object of the present invention is that the implant package further includes a first package surrounding the implant, and the contacting step is performed by connecting the implant and the contact portion in the first package so that an electric current passes through the implant, thereby supplying an electric current to the implant through a plasma discharge device.
  • An object of the present invention is to provide a method for modifying the implant surface through plasma that can be applied.
  • the contact step is to penetrate the first packaging from the outside to the inside of the contact portion extending from one side of the chamber to the inside of the chamber to contact the implant, so that it is easy to contact the implant through plasma. to provide a modification method.
  • one end of the contact part is brought into contact with the implant in the first package and the other end is brought into contact with the other end of the conductor post provided so as to be exposed to the outside of the first package, thereby packaging surrounding the implant.
  • An object of the present invention is to provide a method for modifying the implant surface through plasma that can generate plasma by functioning as an electrode without damaging the implant.
  • An object of the present invention is that the implant providing step provides a plasma permeable part through which the plasma formed in the first package can pass to face the conductor electrode of the plasma discharge equipment so that the air in the chamber outside the first package can pass through the first package.
  • An object of the present invention is to provide a method for surface modification of an implant through plasma, which is incident into an implant to perform surface modification of the implant.
  • the implant providing step provides an implant package further comprising a second package surrounding the first package from the outside of the first package into the plasma discharge device, wherein the implant providing step is the implant package
  • the implant providing step is the implant package
  • the first packaging and the implant inside are provided into the plasma discharge device so that the implant in the first packaging can be surface-modified without being contaminated from the outside.
  • An object of the present invention includes at least one implant accommodated therein, a first packaging surrounding the implant and occluding the inside, and a second packaging surrounding the first packaging from the outside of the first packaging and occluding the inside.
  • An object of the present invention is to provide an implant package in which the implant surface accommodated therein can be modified to be hydrophilic in a state in which the implant is not contaminated.
  • An object of the present invention is that the first package includes a conductor post provided so that one end is in contact with the implant in the first package and the other end is exposed to the outside of the first package.
  • the first packaging surrounds at least a portion of the implant and includes a plasma transmitting portion provided to allow plasma to pass through, a plasma shielding portion provided to surround at least another portion of the implant and not allowing plasma to pass through It is to provide an implant package that efficiently performs surface modification of the implant by moving plasma through the first package, including.
  • An object of the present invention is to generate plasma in a chamber, including an implant package, a plasma discharge device for accommodating a chamber formed inside the implant package and discharging plasma to the chamber to modify the surface of the implant in the implant package. It is to provide a packaged implant surface modification system that generates.
  • An object of the present invention is that the plasma discharge device is connected to a conductive electrode provided to face the inside of the chamber from one side of the inner side, a contact portion extending from one side of the chamber to the inside of the chamber, and the inner space to draw air from the inner space. It is to provide a packaged implant surface modification system including an air withdrawing unit provided, wherein a current is applied to the conductor electrode and the contact unit to generate plasma in the internal space.
  • An object of the present invention is a packaged implant surface modification system that allows the implant to function as an electrode by penetrating the first package from the outside to the inside and allowing current to pass through the implant by contacting the implant inside the first package. is to provide
  • the present invention is implemented by an embodiment having the following configuration in order to achieve the above object.
  • the present invention provides an implant package in a plasma discharge device having a conductor electrode and a contact portion provided to allow current to flow with the chamber therein, and provided to discharge plasma in the chamber. a step of providing an implant, a step of lowering the atmospheric pressure of withdrawing air from the chamber through an air outlet connected to the chamber, a step of applying a current to generate plasma by applying a current to the plasma discharge device, and the discharged plasma modifying the surface of the implant to be hydrophilic wherein the implant package includes at least one implant and a first package surrounding the implant, wherein the implant is connected to a plasma discharge device to allow current to pass through, and the surface is modified.
  • the method for surface modification of the implant through the plasma further comprises a contact step of connecting the contact portion so that the current passes with the implant before the current applying step, wherein the current applying step includes: Plasma is generated by applying a current to the conductor electrode and the contact portion.
  • the contacting step is characterized in that the implant and the contact portion in the first package are connected so that an electric current passes.
  • a contact portion extending from one side of the chamber to the inside of the chamber penetrates the first package from the outside to the inside to contact the implant.
  • one end of the contact part is in contact with the implant in the first package and the other end is in contact with the other end of the conductor post provided to be exposed to the outside of the first package. characterized by approaching it.
  • the implant providing step is characterized in that it provides a plasma transmission part through which the plasma formed in the first packaging can pass so as to face the conductor electrode of the plasma discharge device.
  • the implant providing step provides an implant package further comprising a second package surrounding the first package from the outside of the first package into the plasma discharge device, the implant
  • the providing step is characterized in that it comprises the steps of removing the second package from the implant package, and providing the first package and the implant inside the plasma discharge device.
  • At least one implant accommodated therein, a first package surrounding the implant and occluding the inside, and a first package from the outside of the first package to the inside It is characterized in that it includes a second packaging to occlude.
  • the first package comprises a conductor post provided such that one end is in contact with the implant in the first package and the other end is exposed to the outside of the first package. do.
  • the first packaging surrounds at least a portion of the implant and a plasma transmission unit provided to allow plasma to pass through, and surrounds at least another portion of the implant to allow plasma to pass through. It is characterized in that it includes a plasma shield that is not provided.
  • the plasma transmitting part is formed of a flexible membrane, and the plasma shielding part is made of plastic.
  • an implant package body for accommodating a chamber formed therein and discharging plasma to the chamber to modify the surface of the implant in the implant package body It is characterized in that it includes.
  • the plasma discharge device is connected to a conductive electrode provided to face the inside of the chamber from one side of the inside, a contact portion extending from one side of the chamber to the inside of the chamber, and the inner space. It is characterized in that it includes an air withdrawing unit provided to take out air from the inner space, and a current is applied to the conductor electrode and the contact portion to generate plasma in the inner space.
  • the contact portion penetrates the first package from the outside to the inside and comes into contact with the implant inside the first package, characterized in that the current passes through the implant.
  • the contact portion is in contact with the conductor post formed in the first packaging, it is characterized in that the current passes through the implant.
  • the contact portion is provided so as to be detachable from the inside of the plasma discharge equipment, it is characterized in that the shape can be changed.
  • the present invention can obtain the following effects by the configuration, combination, and use relationship described below with the present embodiment.
  • the present invention provides an implant providing step of providing an implant package in a plasma discharge device having a conductor electrode and a contact portion provided to allow current to flow with a chamber therein, and providing an implant package in a plasma discharge device provided to discharge plasma in the chamber, connected to the chamber A step of lowering atmospheric pressure to withdraw air from the chamber through an air outlet, a current applying step of generating plasma by applying a current to the plasma discharge device, and a modifying step in which the discharged plasma reforms the surface of the implant to be hydrophilic;
  • the package includes at least one implant and a first package surrounding the implant, wherein the implant is connected to a plasma discharge device and an electric current passes through it so that the surface is modified so that the bone and/or surrounding tissue easily adheres to the implant. It has the effect of improving the initial stability of the implant by shortening the period of osseointegration, and at the same time, preventing the implant from being contaminated by exposure to air during the surface modification of the implant.
  • the implant surface modification method through the plasma further comprises a contact step of connecting the contact portion and the implant so that a current passes before the current applying step, wherein the current applying step is a current applied to the conductor electrode and the contact portion
  • the implant functions as an electrode, enabling efficient surface modification.
  • the implant and the contact part in the first package are connected so that an electric current passes through it, so that the implant functions as an electrode in the packaged state and the surface is modified so that the hydrophilicity of the implant does not decrease after the surface modification.
  • the implant package further includes a first package surrounding the implant, and the contacting step is to apply a current to the implant through a plasma discharge device by connecting the implant and the contact portion in the first package so that current passes through. produce possible effects.
  • the contact portion extending from one side of the chamber to the inside of the chamber penetrates the first package from the outside to the inside to make contact with the implant, thereby making it easy to contact the implant.
  • one end of the contact part is brought into contact with the implant in the first package and the other end is brought into contact with the other end of the conductor post provided to be exposed to the outside of the first package, thereby damaging the packaging surrounding the implant.
  • the implant can function as an electrode and generate plasma.
  • the plasma transmitting part through which the plasma formed in the first package can pass is provided to face the conductor electrode of the plasma discharge equipment, so that the air in the chamber outside the first package enters the first package Thus, it is possible to perform surface modification of the implant.
  • the implant providing step provides an implant package further comprising a second package surrounding the first package from the outside of the first package into the plasma discharge device, wherein the implant providing step is performed in the implant package.
  • the present invention includes at least one implant accommodated therein, a first packaging surrounding the implant and occluding the inside, and a second packaging surrounding and occluding the inside of the first packaging from the outside of the first packaging.
  • the surface of the implant accommodated therein may be modified to be hydrophilic in the uncontaminated state.
  • the first package includes a conductor post provided so that one end contacts the implant in the first package and the other end is exposed to the outside of the first package. It functions as an electrode and has the effect of ionizing the gas.
  • the first package includes a plasma transmitting part that surrounds at least a portion of the implant and is provided to allow plasma to pass through, and a plasma shield that surrounds at least another part of the implant so that plasma cannot pass through it.
  • Plasma moves through the first packaging to efficiently perform surface modification of the implant.
  • the present invention includes an implant package body, a plasma discharge device for accommodating a chamber formed inside the implant package body, and discharging plasma to the chamber to modify the surface of the implant in the implant package body to generate plasma in the chamber have an effect
  • the plasma discharge device is connected to a conductive electrode provided to face the inside of the chamber from one side of the inner side, a contact portion extending from one side of the chamber to the inside of the chamber, and connected to the inner space to extract air from the inner space
  • An air outlet may be included, and a current may be applied to the conductor electrode and the contact portion to generate plasma in the inner space.
  • the present invention has the effect of allowing the implant to function as an electrode by penetrating the first package from the outside to the inside and allowing the current to flow through the implant by contacting the implant inside the first package.
  • the contact portion is provided to be detachable from the inside of the plasma discharge device, so that the shape can be changed according to the type of the implant package.
  • 1 is a view showing the stability after implantation of the implant
  • Figure 2 is a flow chart of the implant surface modification method through plasma according to the present invention
  • FIG. 3 is a view showing that the implant package 30 is provided to the plasma discharge device 10 in the implant surface modification method (S) through plasma according to the present invention
  • FIG. 4 is a cross-sectional view of a plasma discharge device 10 according to an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of the implant package 30 according to an embodiment of the present invention.
  • FIG. 6 is a cross-sectional view of the implant package 30 according to an embodiment of the present invention.
  • FIG. 7 is a cross-sectional view of the implant package 30 according to another embodiment of the present invention.
  • FIG. 8 is a cross-sectional view of the implant package 30 according to another embodiment of the present invention.
  • FIG. 9 is a flowchart of an implant providing step (S10) according to an embodiment of the present invention.
  • FIG 10 is a view showing the contact between the contact portion 133 and the implant 31 in the contact step (S2) according to an embodiment of the present invention.
  • FIG 11 is a view showing the connection between the contact portion 133 and the implant 31 through the conductor post 335 in the contact step (S2) according to an embodiment of the present invention.
  • FIG. 12 is a flowchart of an implant surface modification method through plasma according to another embodiment of the present invention.
  • FIG. 13 is a view showing that plasma proceeds to the surface of the implant 31 in the reforming step (S7) according to an embodiment of the present invention
  • FIG. 14 is a view comparing the contact of water to the implant surface treated according to an embodiment of the present invention and the implant surface that is not surface treated.
  • FIG. 2 is a flow chart of the implant surface modification method (S) through plasma according to an embodiment of the present invention.
  • the implant surface modification method (S) through plasma improves the initial stability of the implant by shortening the period of osseointegration by modifying the surface of the implant to be hydrophilic while the implant is packaged and sealed, so that the bone and/or surrounding tissues easily adhere to the implant. At the same time, it is possible to prevent contamination of the implant from exposure to air during the surface modification process of the implant.
  • the implant surface modification method (S) through the plasma includes an implant providing step (S1), a contact step (S2), a pressure drop step (S3), a current application step (S5) and a modification step (S7).
  • the plasma discharge device 10 is provided to discharge plasma in the chamber and accommodates the implant packaging body 30 and can modify the surface of the implant to be hydrophilic through plasma discharge from the inside.
  • the implant package 30 is accommodated in the plasma discharge device 10 when the surface is modified, at least one or more implants can be modified to have a hydrophilic surface in the plasma discharge device 10,
  • the implant may be provided into the plasma discharge device 10 in a packaged state.
  • the plasma discharge device 10 includes a housing 11 , a chamber 12 , a discharge unit 13 , and an air outlet 15 .
  • the housing 11 constitutes the overall appearance of the plasma discharge device 10, and forms an opening on one side and closes the opening by operating a button, etc.
  • the chamber 12 formed in the space may be provided to be sealed.
  • the housing 11 preferably has a predetermined size so that the implant package 30 used for artificial joint surgery is accommodated therein.
  • the chamber 12 is formed in the inner space of the plasma discharge device 10 and can be blocked from the outside by being sealed by the housing 11 .
  • An implant package 30 to be described later is accommodated in the chamber 12 , and plasma is discharged by an electric current in the chamber 12 to modify the implant surface to be hydrophilic.
  • the atmospheric pressure inside the chamber 12 may be lowered to close to vacuum by an air outlet 15 to be described later, and preferably, a pressure of about 3 torr may be maintained.
  • the discharge unit 13 is provided so that current can be applied inside the plasma discharge device 10 .
  • the discharge unit 13 is formed of a conductor through which current can flow, and may have a metal plate having a predetermined width or a bent metal plate.
  • the discharge unit 13 may have a protruding shape to contact the implant so that the implant accommodated in the chamber 12 can function as an electrode during discharge.
  • the implant package 30 is accommodated in the chamber 12, and at this time, the size corresponding to or larger than the plane of the implant package 30 or the area projected on the implant package 30 is orthogonal.
  • a discharging unit having an excitation may be formed.
  • the discharge unit 13 functions as an electrode to discharge plasma in the chamber 12 .
  • the discharge unit 13 includes a conductor electrode 131 and a contact unit 133 .
  • the conductor electrode 131 is provided so as to face the chamber 12 side from one inner side of the plasma discharge device 10 .
  • the conductive electrode 131 may be provided on one surface of the housing to face the chamber from the upper side of the chamber 12, and may be provided to face the inside of the chamber 12 at another position within the chamber. may be
  • the conductor porcelain 131 may extend while having the shape of a plate.
  • the conductive electrode 131 preferably extends over a larger area than the implant or implant package accommodated in the chamber 12 .
  • the contact part 133 is provided so that current flows while facing the chamber 12 side from the other side of the inside of the plasma discharge device 10. 31) to allow current to flow through the implant.
  • the implant may be made of a conductive material, preferably titanium, so that the implant functions as an electrode when the current is applied after being connected to the contact portion 133 to allow current to flow through the chamber 12 or the air in the implant packaging body 30 . may be ionized to generate plasma.
  • the contact part 133 may be formed to extend from one side of the chamber to the inside of the chamber.
  • the contact portion 133 may be formed in a probe shape extending from the bottom or one side of the chamber 12 toward the chamber 12 in which the implant package 30 is accommodated, and may be formed in a probe shape that extends while having a constant cross-sectional area. It may be formed in the shape of a post.
  • the contact portion 133 may penetrate the first packaging 33 from the outside to the inside and contact the implant 31 in the first packaging so that an electric current flows through the implant.
  • the contact portion 133 may be in contact with the conductor post formed in the first packaging to allow current to flow through the implant.
  • the contact portion 133 is provided so as to be detachable inside the plasma discharge device 10, the probe shape and the post shape change depending on the type of the implant package 30 accommodated in the plasma discharge device 10, so that the implant and may be contacted.
  • the conductor electrode 131 and the contact portion 133 function as an anode and a cathode when a current is applied, so that the gas in the chamber under a predetermined pressure is ionized into plasma.
  • the conductive electrode 131 and the contact portion 133 may be made of a metal material.
  • Plasma discharge may be DC glow discharge through direct current, AC or RF glow discharge through AC voltage application.
  • a high-voltage current is applied to the conductor electrode 131 and the contact portion 133 in alternating current so that plasma can be discharged from the chamber 12 in a state close to vacuum.
  • the conductor electrode 131 may be provided to face the contact portion 133 .
  • the conductive electrode 131 is provided facing downward from the upper side of the chamber 12 , and the contact portion 133 faces upward from the lower side of the chamber 12 to face the conductor electrode 131 .
  • the contact portion 133 may be provided while facing the inside from the opposite side of the chamber 12. have.
  • the conductor electrode 131 and the contact portion 133 may be provided so as not to face each other.
  • the air outlet 15 may be connected to the chamber 12 of the plasma discharge device to extract or supply air from the chamber 12 .
  • the air outlet 15 is connected in fluid communication with the chamber 12 .
  • the air outlet 15 may lower the atmospheric pressure of the chamber 12 to close to vacuum by withdrawing the gas from the chamber 12 to the outside or a space configured separately from the chamber 12 through a vacuum pump or the like.
  • the gas in the chamber 12 whose atmospheric pressure is lowered by the air outlet 15 may be ionized into plasma when a current is applied to the conductor electrode 131 and the contact portion 133 .
  • the implant package 30 accommodated in the plasma discharge device 10 of the present invention will be described with reference to FIGS. 5 to 8 .
  • the implant package 30 is provided in the plasma discharge device 10 so that the surface of the implant can be modified to be hydrophilic by the plasma discharged from the chamber 12 .
  • the implant package 30 may include at least one implant 31 , a first package 33 , a fixing member 34 , and a second package 35 .
  • the implant package 30 accommodated in the plasma discharge device 10 is provided with the implant 31 accommodated therein so that the implant 31 is not contaminated by external contaminants. can be
  • the implant 31 is provided to the plasma discharge device 10 in the implant package 30, and the surface is modified by the implant surface modification method (S) through plasma according to the present invention.
  • the implant 31 may be a dental implant or an implant used in an artificial joint.
  • the implant may preferably have a titanium surface.
  • the implant 31 may have a porous surface. In this case, the surface of the implant 31 may be modified without contacting the inner surface of the plasma discharge device 10 .
  • the implant 31 is accommodated in the first packaging 33 , and the first packaging 33 surrounds the outside of the implant 31 so that contamination is prevented from external contaminants. can be prevented.
  • the implant 31 may be double packaged by the second packaging 35 .
  • the first packaging 33 may be formed to surround the implant 31 .
  • the first packaging 33 may be provided to prevent contamination of the implant 31 .
  • the first package 33 may be provided into the plasma discharge device 10 while accommodating the implant 31 therein. Contamination of the implant by the first packaging 33 after the surface modification of the implant 31 can be prevented.
  • the first package 33 may include a plasma transmitting part 331 and a plasma shielding part 333 .
  • the plasma transmitting part 331 surrounds at least a portion of the implant 31 and is provided to configure the packaging of the implant 31 .
  • the plasma transmitting part 331 may be formed of a material through which plasma can pass. In a preferred embodiment of the present invention, the plasma transmitting part 331 may be formed of a flexible membrane.
  • the plasma transmitting part 331 may be provided so that air passes through the implant packaging body 30 inside and outside, and foreign substances such as bacteria and dust do not pass through.
  • the plasma transmitting part 331 may be formed to prevent external moisture from entering the inside while discharging the internal moisture to the outside.
  • the plasma transmitting part 331 may be provided with moisture permeable paper.
  • the plasma transmitting part 331 may be provided in both directions rather than in one direction of the implant.
  • the plasma transmitting part 331 may be provided to face the first conductive electrode 131 and the second conductive electrode 133, Surface modification by plasma can be further promoted.
  • the plasma generated by the ionization of air in the inner space 12 proceeds to the inside of the implant package 31 through the plasma transmitting part 331 to modify the surface of the implant 31 .
  • the plasma shield 333 surrounds another portion of the implant 31 and constitutes the packaging of the implant 31 .
  • the plasma shield 333 may be made of a plastic that plasma cannot pass through, and preferably may be a blister packaging made of a PET (polyethylene terephthalate) or PVC (polyvinyl chloride) plastic pack.
  • the second packaging 333 may be provided to be relatively hard compared to the first packaging 331 to maintain the overall appearance of the first packaging 33 .
  • the plasma shield 333 may have an atypical shape, and may have a substantially complementary shape to the implant 31 accommodated therein. At least a portion of the plasma transmitting part 331 and the plasma shielding part 333 may be provided to be detachable from each other.
  • the plasma transmitting part 331 formed of a moisture permeable paper is provided to be removable from the plasma shielding part 333 formed of plastic, so that the implant 31 after surface modification of the implant is first packaged ( 33) can be taken out from within.
  • the first packaging 33 may further include a conductor post 335 .
  • the conductor post 335 may be provided such that one end contacts the implant in the first package and the other end is exposed to the outside of the first package.
  • the conductor post 335 may function as a medium connecting the inside and the outside of the first packaging 33 so that current passes between the implant 31 and the outside of the first packaging 33 surrounding the implant 31 .
  • the conductor post 335 is disposed between the contact portion 133 and the implant 31 through one end contacting the implant 31 as the other end exposed to the outside of the first packaging 33 comes into contact with the contact portion 133 . current can pass through.
  • the other end of the conductor post 335 may extend to the outside of the second packaging 35 so that the other end is exposed to the outside of the second packaging 35 .
  • the fixing member 34 may be provided to fix the implant 31 between the first packaging 33 and the implant 31 described above.
  • the fixing member 34 may be composed of a plurality of elements, but as a single element connected to each other, the implant 31 is fixed between the implant 31 and the first packaging 33 for packaging the implant 31 . You may.
  • the fixing member 34 prevents movement or shaking of the implant 31 , such as a filler or a reinforcing material.
  • a porous structure may be formed on at least a portion of the surface of the implant 31 , and as the implant 31 shakes in the first packaging 33 or collides with the first packaging 33 , the surface may collect on the surface. or the porous structure may be damaged.
  • the fixing member 34 can prevent damage to the implant by fixing the implant 31 in the first packaging 33 .
  • the fixing member 34 may be formed while having a structure through which plasma can pass. As can be seen in FIGS. 5 to 8 , the fixing member 34 may be provided so that plasma can flow into the space between the fixing members by being formed by a set of a plurality of elements spaced apart from each other, and the fixing members are separated from each other. Even if it is formed integrally connected, it may have voids and/or empty spaces so that plasma can communicate from the outside of the fixing member to the implant 31 on the inside.
  • the structure through which the plasma formed in this way can pass is preferably facing the plasma transmitting part 331, and the plasma flowing into the first package 33 through the plasma transmitting part 331 to be described later can modify the implant surface. .
  • the second packaging 35 may be formed to surround the first packaging 33 .
  • the second packaging 35 may be provided to prevent contamination of the implant 31 as in the case of the first packaging 33 . In the operating room, it is important not to contaminate the patient's body.
  • the first packaging 33 and the implant 31 may be provided into the operating room with the first packaging 33 and the implant 31 accommodated in the second packaging 35, and the second packaging ( After 35) is removed, the first package 33 and the implant 31 may be provided to the plasma discharge device 10 .
  • the first packaging 33 and the second packaging 35 for packaging the implant 31 may also be provided to the plasma discharge device 10 together.
  • the second packaging 35 may include a plasma transmitting part 351 and a plasma shielding part 353 .
  • the plasma transmission part 351 is provided to surround at least a portion of the first packaging 33 and constitute an outer packaging of the implant 31 .
  • the plasma transmitting part 351 may be formed of a material through which plasma can pass.
  • the plasma transmitting part 351 may be provided with a moisture permeable paper.
  • the plasma transmissive part 351 may be configured to face the plasma transmissive part 331 .
  • the plasma transmitting part 351 may be provided in both directions rather than in one direction of the implant.
  • the plasma shield 353 surrounds another portion of the first packaging 33 and constitutes the outer packaging of the implant 31 .
  • the plasma shield 353 may be made of a plastic that plasma cannot pass through, and may preferably be a blister packaging made of a PET (polyethylene terephthalate) or PVC (polyvinyl chloride) plastic pack.
  • the plasma transmitting part 351 and the plasma shielding part 353 may be provided such that at least a portion thereof is detachable from each other.
  • the implant providing step (S1) is a step of providing the implant package 30 in the plasma discharge device 10, as described above, at least one or more implants 31 are plasma discharge device ( 10) can be hydrophilic surface-modified within.
  • the plasma transmitting part 331 may be provided to face the conductor electrode 131 or the contact part 133 in the chamber 12 .
  • the plasma transmitting unit 331 is preferably provided in the chamber 12 to face upward in the implant providing step (S1) so that the discharged plasma can proceed into the first package 33 through the plasma transmitting unit 331 .
  • the implant providing step (S1) is provided so that at least a part of the plasma can pass through, the implant package body 30 further comprising a first package 33 surrounding the implant 31. ) may be provided in the plasma discharge device 10 .
  • the plasma transmitting part 331 of the first packaging 33 may be provided to face the conductor electrode 131 in the internal space of the plasma discharge device.
  • the implant providing step (S1) includes removing the second package from the implant package as described above (S11), and providing the first package and the implant inside the plasma discharge device (S13). ), including, after removing the second packaging 35, the surface of the implant 31 in the first packaging 33 can be modified.
  • the second packaging 35 is provided in the plasma discharge device 10 together with the first packaging 33 and the implant 31 without going through the step (S11) of removing the second packaging. You may.
  • the contacting step S2 is a step of connecting the above-described contact portion 133 and the implant 31 so that current passes through them.
  • the probe-shaped contact portion 133 penetrates the first packaging 33 and penetrates the first packaging from the outside to the inside, thereby making contact with the implant 31 so that current flows.
  • the contact portion 133 may be formed to extend from one side of the chamber to the inside of the chamber.
  • the contact portion 133 is in contact with the end of the conductor post 335 formed in the first packaging 33 so that current can pass through the implant 31 . have.
  • the contact portion 133 may be replaced depending on whether the conductor post 335 is provided in the first package 33 of the received implant package 30 . Accordingly, the contacting step ( S2 ) may include a step (not shown) of replacing the contact part 133 before the contact part comes into contact.
  • the air pressure lowering step (S3) is a process of withdrawing air from the chamber 12 through the air outlet 15 connected to the chamber of the plasma discharge device 10, and the air pressure so that the chamber 12 has an atmospheric pressure close to vacuum. to facilitate the generation of plasma.
  • the chamber 12 may have an atmospheric pressure of about 3 torr through the air outlet 15 .
  • the contact step (S2) may be performed after the atmospheric pressure lowering step (S3).
  • the contact portion 133 comes into contact with the implant 31 or is connected through a conductor post 335 between the contact portion 133 and the implant 31 . can be connected to conduct current.
  • the current application step (S5) is a process of generating plasma by applying a current to the plasma discharge equipment.
  • a current By applying a current to the conductor electrode 131 and the contact portion 133 , the gas in the chamber 12 in a state close to vacuum is ionized into plasma.
  • DC glow discharge through DC or AC or RF glow discharge through application of AC voltage may be performed.
  • a high-voltage current is applied to the conductor electrode 131 and the contact portion 133 as AC. By doing so, the plasma can be discharged in the chamber 12 in a state close to vacuum.
  • the reforming step (S7) is a process in which the discharged plasma reforms the surface of the implant 31 to be hydrophilic.
  • oxygen in the chamber 12 may be ionized to generate a plasma including ozone.
  • the implant 31 in the first packaging 33 functions as an electrode, even if the implant is blocked from the outside by the first packaging 33, a strong voltage is applied between the implant 31 and the conductor electrode 131. Accordingly, the gas inside the first package 33 may be ionized to generate plasma. Plasma removes carbon on the titanium surface from the inside of the first package 33, so that the surface of the implant can be modified to be hydrophilic.
  • the first packaging 33 of the implant package 30 is composed of a plasma transmitting portion 331 through which plasma can pass and a plasma shielding portion 333 through which plasma cannot pass.
  • the plasma formed by ionizing the gas in the chamber 12 and/or the first packaging 33 flows between the conductor electrode 131 and the contact portion 133 by an electric field, in this process
  • the plasma transmission portion 331 of the first package 33 can pass through the plasma so that the plasma can proceed to the inside of the first package 33 .
  • the plasma shield 333 is formed of a material through which plasma cannot pass, the surface of the implant may be further modified by the plasma returning after colliding with the plasma shield 333 .
  • the initial stability of the implant can be secured by allowing the bone and surrounding tissues growing around the implant to be more quickly merged with the implant.
  • the implant 31 having a machined titanium surface is provided into the plasma discharge device 10 while being accommodated in the first package 33, and the contact part 133 is brought into contact with the implant 31 so that an electric current flows through the chamber. (12) was allowed to have a pressure of 3 torr, and an electric current was applied for 120 seconds to modify the surface of the implant.
  • the carbon content of the implant surface-treated through the implant surface modification method (S) through the plasma and the implant without surface treatment were compared with the degree of water spreading on the implant surface, that is, the hydrophilicity of the implant surface.
  • the surface carbon content of the surface-treated implant and the non-surface-treated implant is shown in Table 1 below, and the degree of water spreading on the implant surface is as shown in FIG. 14 . As can be seen in Table 1 and FIG. 14, the carbon content of the surface was reduced by about 50%, and the water in contact with the implant surface spread widely and the hydrophilicity was improved.

Abstract

The present invention relates to a packaged implant surface modification method using plasma, and a packaged implant surface modification system, and, more specifically, to a packaged implant surface modification method using plasma, and a packaged implant surface modification system, the method comprising: an implant provision step of providing an implant-packaging body in plasma discharge equipment, which has a chamber therein and can discharge plasma in the chamber; an air-pressure-lowering step of discharging air from the chamber through an air vent part connected to the chamber; a current application step of applying current to the plasma discharge equipment to generate plasma; and a modification step in which the discharged plasma modifies the surface of an implant so that the surface has a hydrophilic property, wherein the implant-packaging body includes at least one implant, and the implant is connected to the plasma discharge equipment to allow current to flow therebetween so that the surface thereof is modified, and thus bones and/or adjacent tissue are easily stuck to the implant to shorten a synostosis period so that the initial stability of the implant is improved and, simultaneously, the implant can be prevented from being exposed to air and becoming polluted during surface modification of the implant.

Description

플라즈마를 통한 포장된 임플란트 표면개질 방법 및 포장된 임플란트 표면개질 시스템Packaged implant surface modification method and packaged implant surface modification system through plasma
본 발명은 플라즈마를 통한 포장된 임플란트 표면개질 방법 및 포장된 임플란트 표면개질 시스템에 관한 것으로, 더욱 상세하게는, 내부에 챔버를 가지며 상기 챔버 내에서 플라즈마를 방전시킬 수 있도록 구비되는 플라즈마 방전장비 내에 임플란트 포장체를 제공하는 임플란트제공단계, 상기 챔버에 연결된 공기인출부를 통해 챔버으로부터 공기를 빼내는 기압하강단계, 상기 플라즈마 방전장비에 전류를 인가하여 플라즈마를 발생시키는 전류인가단계 및 방전된 플라즈마가 임플란트의 표면을 친수성으로 개질하는 개질단계를 포함하고, 상기 임플란트 포장체는 적어도 하나의 임플란트를 포함하되, 상기 임플란트는 플라즈마 방전장비와 전류가 통하도록 연결되어 표면이 개질되도록 함으로써 뼈 및/또는 주변 조직이 임플란트에 쉽게 달라붙어 골유합 기간을 단축시켜 임플란트의 초기 안정성을 향상시킴과 동시에 임플란트의 표면개질 과정에서 임플란트가 공기에 노출되어 오염되는 것을 방지할 수 있는 플라즈마를 통한 포장된 임플란트 표면개질 방법 및 포장된 임플란트 표면개질 시스템에 관한 것이다.The present invention relates to a packaged implant surface modification method and a packaged implant surface modification system through plasma, and more particularly, to an implant in a plasma discharge device having a chamber therein and capable of discharging plasma in the chamber. The implant providing step of providing a package, the atmospheric pressure lowering step of withdrawing air from the chamber through the air outlet connected to the chamber, the current applying step of generating plasma by applying a current to the plasma discharge device, and the discharged plasma is applied to the surface of the implant and a modifying step of modifying the to be hydrophilic, wherein the implant package includes at least one implant, wherein the implant is connected to a plasma discharge device and an electric current passes through it so that the surface is modified so that the bone and/or surrounding tissue is implanted The packaged implant surface modification method and the packaged implant through plasma that can easily adhere to the implant and shorten the osseointegration period to improve the initial stability of the implant and at the same time prevent the implant from being exposed to air and contamination during the surface modification process. It relates to a surface modification system.
덴탈 임플란트 또는 인공관절에 사용되는 임플란트는 신체에 고정되어 임플란트 주변 관절의 운동을 보조한다. 이러한 임플란트는 기계적 고정에 의해 초기 안정성을 확보하고, 뼈나 주변 조직이 회복되면서 임플란트에 달라붙거나 임플란트와 결합하는 골유착에 의해 장기 안정성을 확보한다. 도 1은 임플란트의 식립 후 안정성을 나타낸 도면이다. 도 1의 점선은 임플란트의 기계적 고정에 의한 안정성을 나타내며, 1점 쇄선은 골유착에 의한 안정성을 나타낸다. 도 1을 참고하면, 기계적인 고정에 의한 강도는 시간이 지남에 따라 떨어지지만, 임플란트의 표면에 뼈가 달라붙게 되어 뼈 및 주변 근조직에 의해 지지됨으로써 시간이 지남에 따라 골유착에 의한 지지력이 증가하여 장기적으로 안정성을 확보하게 된다.Dental implants or implants used in artificial joints are fixed to the body and support the movement of the joints around the implant. These implants secure initial stability by mechanical fixation, and secure long-term stability by osseointegration that adheres to the implant or combines with the implant as the bone or surrounding tissue recovers. 1 is a view showing the stability after implantation of the implant. The dotted line in FIG. 1 indicates stability by mechanical fixation of the implant, and the dashed-dotted line indicates stability by osseointegration. Referring to FIG. 1 , although the strength due to mechanical fixation decreases over time, the bone adheres to the surface of the implant and is supported by the bone and surrounding muscle tissue. This ensures long-term stability.
임플란트에 주로 사용되는 소재는 티타늄으로, 신체 내에서 티타늄은 표면에 산화티타늄 막을 형성하고 산화티타튬 막이 음극의 성질을 가져 친수성을 가진다. 물과 용이하게 접촉할 수 있도록 하는 친수성은 임의의 액체가 금속 기재에 접촉할 때 금속 기재에 대한 액체의 접촉각(contact angle)으로 나타낼 수 있다. 접촉각은 액체가 고체와 접촉하고 있을 때, 액체의 자유 표면이 고체 평면과 이루는 각도로서, 액체 분자 간의 응집력 및 액체, 고체 간의 부착력으로 결정된다. 액체가 고체 평면과 이루는 접촉각이 90˚를 초과할 때의 고체 평면은 물과의 친화력이 적은 성질인 소수성(hydrophobicity)이라 정의될 수 있으며, 액체가 고체 평면과 이루는 접촉각이 90˚미만일 때의 고체 평면은 물과의 친화력이 있는 성질인 친수성(hydrophilicity)이라 정의될 수 있다.The material mainly used for implants is titanium. In the body, titanium forms a titanium oxide film on the surface, and the titanium oxide film has the properties of a cathode and thus has hydrophilicity. Hydrophilicity, which allows for easy contact with water, can be expressed as a contact angle of a liquid with respect to a metal substrate when any liquid contacts the metal substrate. The contact angle is the angle between the free surface of the liquid and the solid plane when the liquid is in contact with the solid, and is determined by the cohesive force between liquid molecules and the adhesion force between the liquid and the solid. When the contact angle between the liquid and the solid plane exceeds 90˚, the solid plane can be defined as hydrophobicity, which is a property of low affinity for water, and when the liquid and the solid plane's contact angle is less than 90˚ A plane can be defined as hydrophilicity, the property of having an affinity for water.
티타늄을 공기 중에 방치하게 되면, 공기 중의 탄소가 산화티타늄과 결합하여 티타늄 막의 친수성을 억제하게 되어 티타늄 막의 친수성이 떨어지는데, 이를 생물학적 노화현상(Biologic Aging)이라 한다. 임플란트의 친수성이 떨어지게 되면 뼈 골유합 능력이 떨어져 임플란트의 초기 안정성이 떨어지게 되므로, 임플란트를 이식한 환자의 초기 운동능력이 저하되는 문제점이 있으며, 특히 인공관절 임플란트의 경우, 임플란트의 친수성 저하는 인공관절 시술 후 초기 재활이 장기적인 환자의 운동능력에 큰 영향을 미치게 된다. When titanium is left in the air, carbon in the air combines with titanium oxide to suppress the hydrophilicity of the titanium film, and the hydrophilicity of the titanium film decreases, which is called biologic aging. When the hydrophilicity of the implant decreases, the bone osseointegration ability decreases and the initial stability of the implant decreases. Therefore, there is a problem in that the initial movement ability of the implanted patient is lowered. Post-rehabilitation has a significant impact on the long-term patient's exercise ability.
따라서 임플란트의 표면이 친수성을 유지하도록 표면처리 방법이 필요하다. 공기 중에 노출되지 않도록 하기 위해 식염수에 임플란트를 넣어 공급하는 방법이 있으나, 식염수가 오염되는 경우 임플란트의 품질이 저하되면 식염수의 유통기한이 짧다는 단점이 있다.Therefore, a surface treatment method is required to maintain the hydrophilicity of the surface of the implant. There is a method of supplying the implant by putting the implant in saline to prevent exposure to air, but there is a disadvantage in that the shelf life of the saline is short if the quality of the implant is deteriorated when the saline is contaminated.
다음으로, 한국등록특허 제10-1196171호에서와 같이 임플란트의 티타늄 표면에 자외선을 조사하여 친수성 표면개질을 수행할 수 있다. 그러나, UV를 통한 친수성 표면개질 경우 임플란트를 둘러싸고 있는 포장재를 자외선이 통과하려면 포장재의 재질이 석영유리여야 한다. 크기가 작은 치과용 임플란트의 경우에는 석영유리 하우징이나 케이스에 임플란트를 넣어 수술실(operation room)에 공급할 수 있으나, 인공슬관절과 같은 부피가 큰 임플란트의 경우 임플란트를 석영유리 케이스에 넣어 공급하려면 케이스의 부피가 커져 비용이 비싸고 경제성이 떨어지는 단점이 있다.Next, as in Korean Patent Registration No. 10-1196171, hydrophilic surface modification can be performed by irradiating ultraviolet rays on the titanium surface of the implant. However, in the case of hydrophilic surface modification through UV, the material of the packaging material must be quartz glass in order for ultraviolet rays to pass through the packaging material surrounding the implant. In the case of a small dental implant, the implant can be placed in a quartz glass housing or case and supplied to the operation room. It has the disadvantages of high cost and poor economic feasibility.
또한, 통상적으로 임플란트는 오염을 막기 위해 포장재에 의해 둘러싸인 채로 공급되는데, 자외선(UV)을 통해 임플란트의 표면에 친수성 처리를 하려고 하는 경우 임플란트의 포장을 제거해야 하기 때문에 멸균상태가 해제되어 오염되는 문제가 있다.In addition, in general, implants are supplied while surrounded by a packaging material to prevent contamination. However, when a hydrophilic treatment is performed on the surface of the implant through ultraviolet (UV) light, the sterilization state is released and contamination is caused because the packaging of the implant must be removed. there is
한편, 플라즈마 상태의 높은 에너지를 가진 입자를 재료의 표면에 충돌시킴으로써 표면을 개질시킬 수 있다. 플라즈마는 진공에 가까운 상태에서 기체에 전류를 통과시켜 방전에 의해 공기를 이온화시킨 글로(glow) 플라즈마, 아크 방전 등을 통해 고온 고압을 가하여 발생시킨 전자, 이온, 중성입자(원자 및 분자)로 구성된 부분이온화된 열 플라즈마 등으로 구분될 수 있으며, 물리적으로 전기전도도를 가지는 전하를 띤 입자들의 집합체로, 외부 전자기장에 집합적으로 반응한다.On the other hand, the surface can be modified by colliding particles with high energy in the plasma state onto the surface of the material. Plasma is composed of electrons, ions, and neutral particles (atoms and molecules) generated by applying high temperature and high pressure through glow plasma, arc discharge, etc., which ionizes air by electric discharge by passing electric current through gas in a state close to vacuum. It can be classified as partially ionized thermal plasma, etc., and is an aggregate of charged particles having physical electrical conductivity and collectively reacts to an external electromagnetic field.
기체에 높은 전압을 가해주면 낮은 온도에서도 원자나 분자를 이온화시킬 수 있게 된다. 예를 들면 아르곤(Ar)가스의 경우 1 mTorr ~ 100 Torr사이의 압력에서는 1cm당 100 V이상의 전계만 있어도 플라즈마를 생성시킬 수 있다. 산소를 포함한 기체를 플라즈마화시키면, 양이온과 음이온 및 단일 산소원자, 오존, 이온화된 산소원자들이 발생하게 된다. 플라즈마(라디칼)에 의해 임플란트의 표면에 흡착된 탄소를 제거함으로써 임플란트의 친수성을 향상시킬 수 있다. By applying a high voltage to the gas, atoms or molecules can be ionized even at low temperatures. For example, in the case of argon (Ar) gas, at a pressure of 1 mTorr to 100 Torr, even if there is an electric field of 100 V or more per 1 cm, plasma can be generated. When a gas containing oxygen is plasmaized, positive and negative ions, single oxygen atoms, ozone, and ionized oxygen atoms are generated. By removing carbon adsorbed on the surface of the implant by plasma (radical), the hydrophilicity of the implant can be improved.
따라서, 당업계에서는 플라즈마를 통해 임플란트의 표면을 친수성으로 개질함으로써 임플란트 시술 시 초기 안정성을 확보하면서, 임플란트의 공기 노출에 의한 오염을 방지하기 위해 포장된 상태에서 표면개질을 할 수 있는 표면개질방법을 요구하고 있다.Therefore, in the art, a surface modification method that can modify the surface of the implant in a packaged state to prevent contamination by air exposure while securing initial stability during implant operation by modifying the surface of the implant to be hydrophilic through plasma are demanding
(특허문헌 1) 한국등록특허공보 제10-1196171호(2012.10.24)(Patent Document 1) Korean Patent Publication No. 10-1196171 (October 24, 2012)
본 발명은 상기와 같은 문제점을 해결하고자 안출된 것으로, The present invention has been devised to solve the above problems,
본 발명의 목적은, 내부에 챔버와 전류가 통하도록 구비되는 도체전극 및 접촉부를 가지며 상기 챔버 내에서 플라즈마를 방전시킬 수 있도록 구비되는 플라즈마 방전장비 내에 임플란트 포장체를 제공하는 임플란트제공단계, 상기 챔버에 연결된 공기인출부를 통해 챔버으로부터 공기를 빼내는 기압하강단계, 상기 플라즈마 방전장비에 전류를 인가하여 플라즈마를 발생시키는 전류인가단계 및 방전된 플라즈마가 임플란트의 표면을 친수성으로 개질하는 개질단계를 포함하고, 상기 임플란트 포장체는 적어도 하나의 임플란트와 상기 임플란트를 둘러싸는 제1포장을 포함하되, 상기 임플란트는 플라즈마 방전장비와 전류가 통하도록 연결되어 표면이 개질되도록 함으로써 뼈 및/또는 주변 조직이 임플란트에 쉽게 달라붙어 골유합 기간을 단축시켜 임플란트의 초기 안정성을 향상시킴과 동시에 임플란트의 표면개질 과정에서 임플란트가 공기에 노출되어 오염되는 것을 방지할 수 있는 플라즈마를 통한 임플란트 표면개질 방법을 제공하는 것이다.An object of the present invention is an implant providing step of providing an implant package in a plasma discharge device having a conductor electrode and a contact portion provided to allow current to flow with the chamber therein, and providing an implant package in the plasma discharge device provided to discharge plasma in the chamber, the chamber A step of lowering the atmospheric pressure to withdraw air from the chamber through an air outlet connected to a step of lowering the pressure, a step of applying a current to generate plasma by applying a current to the plasma discharge device, and a modifying step in which the discharged plasma reforms the surface of the implant into hydrophilicity, The implant package includes at least one implant and a first package surrounding the implant, wherein the implant is connected to a plasma discharge device and an electric current passes through it so that the surface is modified so that the bone and/or surrounding tissue is easily attached to the implant. An object of the present invention is to provide a method for modifying the implant surface through plasma that can shorten the period of osseointegration by adhesion and improve the initial stability of the implant, and at the same time, prevent the implant from being contaminated by exposure to air during the surface modification of the implant.
본 발명의 목적은, 상기 상기 플라즈마를 통한 임플란트 표면개질 방법은 상기 전류인가단계 전에 상기 접촉부를 임플란트와 전류가 통하도록 연결시키는 컨택단계를 더 포함하고, 상기 전류인가단계는 상기 도체전극 및 접촉부에 전류를 인가하여 플라즈마를 발생시켜 임플란트가 전극으로 기능하여 효율적인 표면개질이 가능한 플라즈마를 통한 임플란트 표면개질 방법을 제공하는 것이다.It is an object of the present invention, wherein the method for surface modification of the implant through the plasma further comprises a contact step of connecting the contact portion to the implant so that a current passes before the step of applying the current, the step of applying the current to the conductor electrode and the contact portion To provide a method for surface modification of an implant through plasma that generates plasma by applying an electric current so that the implant functions as an electrode and enables efficient surface modification.
본 발명의 목적은, 상기 컨택단계는 제1포장 내의 임플란트와 접촉부를 전류가 통하도록 연결시켜 임플란트가 포장된 상태에서 전극으로 기능하여 표면개질됨으로써 표면개질 후에 임플란트의 친수성이 저하되지 않는 플라즈마를 통한 임플란트 표면개질 방법을 제공하는 것이다.An object of the present invention is that the contacting step connects the implant and the contact part in the first package so that an electric current passes through it, so that the implant functions as an electrode while the implant is packaged and the surface is modified through plasma so that the hydrophilicity of the implant does not decrease after the surface modification. An object of the present invention is to provide a method for surface modification of an implant.
본 발명의 목적은, 임플란트 포장체는 임플란트를 둘러싸는 제1포장을 더 포함하고, 상기 컨택단계는 상기 제1포장 내의 임플란트와 접촉부를 전류가 통하도록 연결시킴으로써 플라즈마 방전장비를 통해 임플란트에 전류를 인가할 수 있는 플라즈마를 통한 임플란트 표면개질 방법을 제공하는 것이다.An object of the present invention is that the implant package further includes a first package surrounding the implant, and the contacting step is performed by connecting the implant and the contact portion in the first package so that an electric current passes through the implant, thereby supplying an electric current to the implant through a plasma discharge device. An object of the present invention is to provide a method for modifying the implant surface through plasma that can be applied.
본 발명의 목적은, 상기 컨택단계는 챔버의 일측에서 챔버 내측으로 연장형성되는 접촉부를 상기 제1포장을 외부에서 내부로 관통하여 상기 임플란트와 접촉시켜 임플란트와 접촉하는 것이 용이한 플라즈마를 통한 임플란트 표면개질 방법을 제공하는 것이다.An object of the present invention, the contact step is to penetrate the first packaging from the outside to the inside of the contact portion extending from one side of the chamber to the inside of the chamber to contact the implant, so that it is easy to contact the implant through plasma. to provide a modification method.
본 발명의 목적은, 상기 컨택단계는 상기 접촉부를 일단이 제1포장 내의 임플란트와 접촉하고 타단은 상기 제1포장의 외부로 노출되도록 구비되는 도체 포스트의 타단과 접촉하도록 접근시키켜 임플란트를 둘러싼 포장의 손상 없이 임플란트가 전극으로 기능하여 플라즈마를 발생시킬 수 있는 플라즈마를 통한 임플란트 표면개질 방법을 제공하는 것이다.It is an object of the present invention, in the contact step, one end of the contact part is brought into contact with the implant in the first package and the other end is brought into contact with the other end of the conductor post provided so as to be exposed to the outside of the first package, thereby packaging surrounding the implant. An object of the present invention is to provide a method for modifying the implant surface through plasma that can generate plasma by functioning as an electrode without damaging the implant.
본 발명의 목적은, 상기 임플란트 제공단계는 상기 제1포장에 형성되는 플라즈마가 통과할 수 있는 플라즈마 투과부를 플라즈마 방전장비의 도체전극과 면하도록 제공하여 제1포장 외부의 챔버 내 공기가 제1포장 내로 입사되어 임플란트의 표면개질을 수행할 수 있도록 하는 플라즈마를 통한 임플란트 표면개질 방법을 제공하는 것이다.An object of the present invention is that the implant providing step provides a plasma permeable part through which the plasma formed in the first package can pass to face the conductor electrode of the plasma discharge equipment so that the air in the chamber outside the first package can pass through the first package. An object of the present invention is to provide a method for surface modification of an implant through plasma, which is incident into an implant to perform surface modification of the implant.
본 발명의 목적은, 상기 임플란트 제공단계는 제1포장의 외부에서 제1포장을 둘러싸는 제2포장을 더 포함하는 임플란트 포장체를 플라즈마 방전장비 내로 제공하되, 상기 임플란트제공단계는 상기 임플란트 포장체에서 제2포장을 제거하는 단계, 제1포장과 내부의 임플란트를 플라즈마 방전장비 내로 제공하여 제1포장 내의 임플란트가 외부로부터 오염되지 않은 채로 표면개질될 수 있도록 하는 플라즈마를 통한 임플란트 표면개질 방법을 제공하는 것이다.An object of the present invention, the implant providing step provides an implant package further comprising a second package surrounding the first package from the outside of the first package into the plasma discharge device, wherein the implant providing step is the implant package In the step of removing the second packaging, the first packaging and the implant inside are provided into the plasma discharge device so that the implant in the first packaging can be surface-modified without being contaminated from the outside. will do
본 발명의 목적은, 내부에 수용되는 적어도 하나의 임플란트, 상기 임플란트를 둘러싸며 내부를 폐색하는 제1포장 및 상기 제1포장의 외부에서 제1포장을 둘러싸며 내부를 폐색하는 제2포장을 포함여 임플란트가 오염되지 않은 상태에서 내부에 수용된 임플란트 표면이 친수성으로 개질될 수 있는 임플란트 포장체를 제공하는 것이다.An object of the present invention includes at least one implant accommodated therein, a first packaging surrounding the implant and occluding the inside, and a second packaging surrounding the first packaging from the outside of the first packaging and occluding the inside. An object of the present invention is to provide an implant package in which the implant surface accommodated therein can be modified to be hydrophilic in a state in which the implant is not contaminated.
본 발명의 목적은, 상기 제1포장은 일단이 상기 제1포장 내의 임플란트와 접촉하고 타단은 상기 제1포장의 외부로 노출되도록 구비되는 도체 포스트를 포함하여 임플란트 포장체의 손상 없이 플라즈마 방전장비 내에서 임플란트가 전극으로 기능하여 기체를 이온화시킬 수 있는 임플란트 포장체를 제공하는 것이다.An object of the present invention is that the first package includes a conductor post provided so that one end is in contact with the implant in the first package and the other end is exposed to the outside of the first package. To provide an implant package capable of ionizing gas by functioning as an electrode in the implant.
본 발명의 목적은, 상기 제1포장은 상기 임플란트의 적어도 일부분을 둘러싸며 플라즈마가 통과할 수 있도록 구비되는 플라즈마 투과부, 상기 임플란트의 적어도 다른 일부분을 둘러싸며 플라즈마가 통과할 수 없도록 구비되는 플라즈마 차폐부를 포함하여 제1포장을 통해 플라즈마가 이동하여 임플란트의 표면개질을 효율적으로 수행하는 임플란트 포장체를 제공하는 것이다.An object of the present invention, the first packaging surrounds at least a portion of the implant and includes a plasma transmitting portion provided to allow plasma to pass through, a plasma shielding portion provided to surround at least another portion of the implant and not allowing plasma to pass through It is to provide an implant package that efficiently performs surface modification of the implant by moving plasma through the first package, including.
본 발명의 목적은, 임플란트 포장체, 상기 임플란트 포장체를 내부에 형성되는 챔버 수용하며 상기 챔버에 플라즈마를 방전시켜 상기 임플란트 포장체 내의 임플란트의 표면을 개질하는 플라즈마 방전장비를 포함하여 챔버에서 플라즈마를 발생시키는 포장된 임플란트 표면개질 시스템을 제공하는 것이다.An object of the present invention is to generate plasma in a chamber, including an implant package, a plasma discharge device for accommodating a chamber formed inside the implant package and discharging plasma to the chamber to modify the surface of the implant in the implant package. It is to provide a packaged implant surface modification system that generates.
본 발명의 목적은, 상기 플라즈마 방전장비는 내부 일측면에서 챔버 내측을 면하도록 구비되는 도체전극, 챔버의 일측으로부터 챔버 내측으로 연장형성되는 접촉부 및 상기 내부공간과 연결되어 내부공간의 공기를 빼내도록 구비되는 공기인출부를 포함하고, 상기 도체전극과 접촉부에 전류가 인가되어 내부공간에서 플라즈마를 발생시키는 포장된 임플란트 표면개질 시스템을 제공하는 것이다.An object of the present invention is that the plasma discharge device is connected to a conductive electrode provided to face the inside of the chamber from one side of the inner side, a contact portion extending from one side of the chamber to the inside of the chamber, and the inner space to draw air from the inner space. It is to provide a packaged implant surface modification system including an air withdrawing unit provided, wherein a current is applied to the conductor electrode and the contact unit to generate plasma in the internal space.
본 발명의 목적은, 상기 접촉부는 제1포장을 외부에서 내부로 관통하여 상기 제1포장 내부의 임플란트와 접촉하여 상기 임플란트에 전류가 통하도록 함으로써 임플란트가 전극으로 기능하도록 하는 포장된 임플란트 표면개질 시스템을 제공하는 것이다.An object of the present invention is a packaged implant surface modification system that allows the implant to function as an electrode by penetrating the first package from the outside to the inside and allowing current to pass through the implant by contacting the implant inside the first package. is to provide
본 발명의 목적은, 상기 접촉부는 상기 플라즈마 방전장비의 내부에서 탈착가능하도록 구비되어 임플란트 포장체의 타입에 따라 형상이 바뀔 수 있는 포장된 임플란트 표면개질 시스템을 제공하는 것이다.It is an object of the present invention to provide a packaged implant surface modification system in which the contact part is provided to be detachable from the inside of the plasma discharge device, and the shape can be changed according to the type of the implant package.
본 발명은 앞서 본 목적을 달성하기 위해서 다음과 같은 구성을 가진 실시예에 의해서 구현된다.The present invention is implemented by an embodiment having the following configuration in order to achieve the above object.
본 발명의 일 실시예에 따르면, 본 발명은, 내부에 챔버와 전류가 통하도록 구비되는 도체전극 및 접촉부를 가지며 상기 챔버 내에서 플라즈마를 방전시킬 수 있도록 구비되는 플라즈마 방전장비 내에 임플란트 포장체를 제공하는 임플란트제공단계, 상기 챔버에 연결된 공기인출부를 통해 챔버으로부터 공기를 빼내는 기압하강단계, 상기 플라즈마 방전장비에 전류를 인가하여 플라즈마를 발생시키는 전류인가단계 및 방전된 플라즈마가 임플란트의 표면을 친수성으로 개질하는 개질단계를 포함하고, 상기 임플란트 포장체는 적어도 하나의 임플란트와 상기 임플란트를 둘러싸는 제1포장을 포함하되, 상기 임플란트는 플라즈마 방전장비와 전류가 통하도록 연결되어 표면이 개질되는 것을 특징으로 한다.According to one embodiment of the present invention, the present invention provides an implant package in a plasma discharge device having a conductor electrode and a contact portion provided to allow current to flow with the chamber therein, and provided to discharge plasma in the chamber. a step of providing an implant, a step of lowering the atmospheric pressure of withdrawing air from the chamber through an air outlet connected to the chamber, a step of applying a current to generate plasma by applying a current to the plasma discharge device, and the discharged plasma modifying the surface of the implant to be hydrophilic wherein the implant package includes at least one implant and a first package surrounding the implant, wherein the implant is connected to a plasma discharge device to allow current to pass through, and the surface is modified. .
본 발명의 일 실시예에 따르면, 본 발명은, 상기 플라즈마를 통한 임플란트 표면개질 방법은 상기 전류인가단계 전에 상기 접촉부를 임플란트와 전류가 통하도록 연결시키는 컨택단계를 더 포함하고, 상기 전류인가단계는 상기 도체전극 및 접촉부에 전류를 인가하여 플라즈마를 발생시키는 것을 특징으로 한다.According to an embodiment of the present invention, the method for surface modification of the implant through the plasma further comprises a contact step of connecting the contact portion so that the current passes with the implant before the current applying step, wherein the current applying step includes: Plasma is generated by applying a current to the conductor electrode and the contact portion.
본 발명의 일 실시예에 따르면, 본 발명은, 상기 컨택단계는 제1포장 내의 임플란트와 접촉부를 전류가 통하도록 연결시키는 것을 특징으로 한다.According to an embodiment of the present invention, the contacting step is characterized in that the implant and the contact portion in the first package are connected so that an electric current passes.
본 발명의 일 실시예에 따르면, 본 발명은, 상기 컨택단계는 챔버의 일측에서 챔버 내측으로 연장형성되는 접촉부가 상기 제1포장을 외부에서 내부로 관통하여 상기 임플란트와 접촉하는 것을 특징으로 한다.According to an embodiment of the present invention, in the contacting step, a contact portion extending from one side of the chamber to the inside of the chamber penetrates the first package from the outside to the inside to contact the implant.
본 발명의 일 실시예에 따르면, 본 발명은, 상기 컨택단계는 상기 접촉부를 일단이 제1포장 내의 임플란트와 접촉하고 타단은 상기 제1포장의 외부로 노출되도록 구비되는 도체 포스트의 타단과 접촉하도록 접근시키는 것을 특징으로 한다.According to one embodiment of the present invention, in the present invention, in the contacting step, one end of the contact part is in contact with the implant in the first package and the other end is in contact with the other end of the conductor post provided to be exposed to the outside of the first package. characterized by approaching it.
본 발명의 일 실시예에 따르면, 본 발명은, 상기 임플란트 제공단계는 상기 제1포장에 형성되는 플라즈마가 통과할 수 있는 플라즈마 투과부를 플라즈마 방전장비의 도체전극과 면하도록 제공하는 것을 특징으로 한다.According to one embodiment of the present invention, the implant providing step is characterized in that it provides a plasma transmission part through which the plasma formed in the first packaging can pass so as to face the conductor electrode of the plasma discharge device.
본 발명의 일 실시예에 따르면, 본 발명은, 상기 임플란트 제공단계는 제1포장의 외부에서 제1포장을 둘러싸는 제2포장을 더 포함하는 임플란트 포장체를 플라즈마 방전장비 내로 제공하되, 상기 임플란트제공단계는 상기 임플란트 포장체에서 제2포장을 제거하는 단계, 제1포장과 내부의 임플란트를 플라즈마 방전장비 내로 제공하는 단계를 포함하는 것을 특징으로 한다.According to an embodiment of the present invention, in the present invention, the implant providing step provides an implant package further comprising a second package surrounding the first package from the outside of the first package into the plasma discharge device, the implant The providing step is characterized in that it comprises the steps of removing the second package from the implant package, and providing the first package and the implant inside the plasma discharge device.
본 발명의 일 실시예에 따르면, 본 발명은, 내부에 수용되는 적어도 하나의 임플란트, 상기 임플란트를 둘러싸며 내부를 폐색하는 제1포장 및 상기 제1포장의 외부에서 제1포장을 둘러싸며 내부를 폐색하는 제2포장을 포함하는 것을 특징으로 한다.According to an embodiment of the present invention, at least one implant accommodated therein, a first package surrounding the implant and occluding the inside, and a first package from the outside of the first package to the inside It is characterized in that it includes a second packaging to occlude.
본 발명의 일 실시예에 따르면, 본 발명은, 상기 제1포장은 일단이 상기 제1포장 내의 임플란트와 접촉하고 타단은 상기 제1포장의 외부로 노출되도록 구비되는 도체 포스트를 포함하는 것을 특징으로 한다.According to an embodiment of the present invention, the first package comprises a conductor post provided such that one end is in contact with the implant in the first package and the other end is exposed to the outside of the first package. do.
본 발명의 일 실시예에 따르면, 본 발명은, 상기 제1포장은 상기 임플란트의 적어도 일부분을 둘러싸며 플라즈마가 통과할 수 있도록 구비되는 플라즈마 투과부, 상기 임플란트의 적어도 다른 일부분을 둘러싸며 플라즈마가 통과할 수 없도록 구비되는 플라즈마 차폐부를 포함하는 것을 특징으로 한다.According to an embodiment of the present invention, the first packaging surrounds at least a portion of the implant and a plasma transmission unit provided to allow plasma to pass through, and surrounds at least another portion of the implant to allow plasma to pass through. It is characterized in that it includes a plasma shield that is not provided.
본 발명의 일 실시예에 따르면, 본 발명은, 상기 플라즈마 투과부는 가요성의 멤브레인으로 형성되고, 상기 플라즈마 차폐부는 플라스틱으로 구성되는 것을 특징으로 한다.According to an embodiment of the present invention, the plasma transmitting part is formed of a flexible membrane, and the plasma shielding part is made of plastic.
본 발명의 일 실시예에 따르면, 본 발명은, 임플란트 포장체, 상기 임플란트 포장체를 내부에 형성되는 챔버 수용하며 상기 챔버에 플라즈마를 방전시켜 상기 임플란트 포장체 내의 임플란트의 표면을 개질하는 플라즈마 방전장비를 포함하는 것을 특징으로 한다.According to an embodiment of the present invention, an implant package body, a plasma discharge device for accommodating a chamber formed therein and discharging plasma to the chamber to modify the surface of the implant in the implant package body It is characterized in that it includes.
본 발명의 일 실시예에 따르면, 본 발명은, 상기 플라즈마 방전장비는 내부 일측면에서 챔버 내측을 면하도록 구비되는 도체전극, 챔버의 일측으로부터 챔버 내측으로 연장형성되는 접촉부 및 상기 내부공간과 연결되어 내부공간의 공기를 빼내도록 구비되는 공기인출부를 포함하고, 상기 도체전극과 접촉부에 전류가 인가되어 내부공간에서 플라즈마를 발생시키는 것을 특징으로 한다.According to one embodiment of the present invention, the plasma discharge device is connected to a conductive electrode provided to face the inside of the chamber from one side of the inside, a contact portion extending from one side of the chamber to the inside of the chamber, and the inner space. It is characterized in that it includes an air withdrawing unit provided to take out air from the inner space, and a current is applied to the conductor electrode and the contact portion to generate plasma in the inner space.
본 발명의 일 실시예에 따르면, 본 발명은, 상기 접촉부는 제1포장을 외부에서 내부로 관통하여 상기 제1포장 내부의 임플란트와 접촉하여 상기 임플란트에 전류가 통하도록 하는 것을 특징으로 한다.According to an embodiment of the present invention, the contact portion penetrates the first package from the outside to the inside and comes into contact with the implant inside the first package, characterized in that the current passes through the implant.
본 발명의 일 실시예에 따르면, 본 발명은, 상기 접촉부는 제1포장에 형성된 도체 포스트와 접촉하여 상기 임플란트에 전류가 통하도록 하는 것을 특징으로 한다.According to one embodiment of the present invention, the contact portion is in contact with the conductor post formed in the first packaging, it is characterized in that the current passes through the implant.
본 발명의 일 실시예에 따르면, 본 발명은, 상기 접촉부는 상기 플라즈마 방전장비의 내부에서 탈착가능하도록 구비되어 형상이 바뀔 수 있는 것을 특징으로 한다.According to one embodiment of the present invention, the contact portion is provided so as to be detachable from the inside of the plasma discharge equipment, it is characterized in that the shape can be changed.
본 발명은 앞서 본 실시예와 하기에 설명할 구성과 결합, 사용관계에 의해 다음과 같은 효과를 얻을 수 있다.The present invention can obtain the following effects by the configuration, combination, and use relationship described below with the present embodiment.
본 발명은, 내부에 챔버와 전류가 통하도록 구비되는 도체전극 및 접촉부를 가지며 상기 챔버 내에서 플라즈마를 방전시킬 수 있도록 구비되는 플라즈마 방전장비 내에 임플란트 포장체를 제공하는 임플란트제공단계, 상기 챔버에 연결된 공기인출부를 통해 챔버으로부터 공기를 빼내는 기압하강단계, 상기 플라즈마 방전장비에 전류를 인가하여 플라즈마를 발생시키는 전류인가단계 및 방전된 플라즈마가 임플란트의 표면을 친수성으로 개질하는 개질단계를 포함하고, 상기 임플란트 포장체는 적어도 하나의 임플란트와 상기 임플란트를 둘러싸는 제1포장을 포함하되, 상기 임플란트는 플라즈마 방전장비와 전류가 통하도록 연결되어 표면이 개질되도록 함으로써 뼈 및/또는 주변 조직이 임플란트에 쉽게 달라붙어 골유합 기간을 단축시켜 임플란트의 초기 안정성을 향상시킴과 동시에 임플란트의 표면개질 과정에서 임플란트가 공기에 노출되어 오염되는 것을 방지하는 효과를 가진다.The present invention provides an implant providing step of providing an implant package in a plasma discharge device having a conductor electrode and a contact portion provided to allow current to flow with a chamber therein, and providing an implant package in a plasma discharge device provided to discharge plasma in the chamber, connected to the chamber A step of lowering atmospheric pressure to withdraw air from the chamber through an air outlet, a current applying step of generating plasma by applying a current to the plasma discharge device, and a modifying step in which the discharged plasma reforms the surface of the implant to be hydrophilic; The package includes at least one implant and a first package surrounding the implant, wherein the implant is connected to a plasma discharge device and an electric current passes through it so that the surface is modified so that the bone and/or surrounding tissue easily adheres to the implant. It has the effect of improving the initial stability of the implant by shortening the period of osseointegration, and at the same time, preventing the implant from being contaminated by exposure to air during the surface modification of the implant.
본 발명은, 상기 상기 플라즈마를 통한 임플란트 표면개질 방법은 상기 전류인가단계 전에 상기 접촉부를 임플란트와 전류가 통하도록 연결시키는 컨택단계를 더 포함하고, 상기 전류인가단계는 상기 도체전극 및 접촉부에 전류를 인가하여 플라즈마를 발생시켜 임플란트가 전극으로 기능하여 효율적인 표면개질이 가능하다.The present invention, the implant surface modification method through the plasma further comprises a contact step of connecting the contact portion and the implant so that a current passes before the current applying step, wherein the current applying step is a current applied to the conductor electrode and the contact portion By applying plasma, the implant functions as an electrode, enabling efficient surface modification.
본 발명은, 상기 컨택단계는 제1포장 내의 임플란트와 접촉부를 전류가 통하도록 연결시켜 임플란트가 포장된 상태에서 전극으로 기능하여 표면개질됨으로써 표면개질 후에 임플란트의 친수성이 저하되지 않는 효과가 있다.In the present invention, in the contact step, the implant and the contact part in the first package are connected so that an electric current passes through it, so that the implant functions as an electrode in the packaged state and the surface is modified so that the hydrophilicity of the implant does not decrease after the surface modification.
본 발명은, 임플란트 포장체는 임플란트를 둘러싸는 제1포장을 더 포함하고, 상기 컨택단계는 상기 제1포장 내의 임플란트와 접촉부를 전류가 통하도록 연결시킴으로써 플라즈마 방전장비를 통해 임플란트에 전류를 인가할 수 있는 효과를 도출한다.In the present invention, the implant package further includes a first package surrounding the implant, and the contacting step is to apply a current to the implant through a plasma discharge device by connecting the implant and the contact portion in the first package so that current passes through. produce possible effects.
본 발명은, 상기 컨택단계는 챔버의 일측에서 챔버 내측으로 연장형성되는 접촉부를 상기 제1포장을 외부에서 내부로 관통하여 상기 임플란트와 접촉시켜 임플란트와 접촉하는 것이 용이한 효과를 얻을 수 있다.In the present invention, in the contacting step, the contact portion extending from one side of the chamber to the inside of the chamber penetrates the first package from the outside to the inside to make contact with the implant, thereby making it easy to contact the implant.
본 발명은, 상기 컨택단계는 상기 접촉부를 일단이 제1포장 내의 임플란트와 접촉하고 타단은 상기 제1포장의 외부로 노출되도록 구비되는 도체 포스트의 타단과 접촉하도록 접근시키켜 임플란트를 둘러싼 포장의 손상 없이 임플란트가 전극으로 기능하여 플라즈마를 발생시킬 수 있다.In the present invention, in the contacting step, one end of the contact part is brought into contact with the implant in the first package and the other end is brought into contact with the other end of the conductor post provided to be exposed to the outside of the first package, thereby damaging the packaging surrounding the implant. Without it, the implant can function as an electrode and generate plasma.
본 발명은, 상기 임플란트 제공단계는 상기 제1포장에 형성되는 플라즈마가 통과할 수 있는 플라즈마 투과부를 플라즈마 방전장비의 도체전극과 면하도록 제공하여 제1포장 외부의 챔버 내 공기가 제1포장 내로 입사되어 임플란트의 표면개질을 수행할 수 있다.In the present invention, in the step of providing the implant, the plasma transmitting part through which the plasma formed in the first package can pass is provided to face the conductor electrode of the plasma discharge equipment, so that the air in the chamber outside the first package enters the first package Thus, it is possible to perform surface modification of the implant.
본 발명은, 상기 임플란트 제공단계는 제1포장의 외부에서 제1포장을 둘러싸는 제2포장을 더 포함하는 임플란트 포장체를 플라즈마 방전장비 내로 제공하되, 상기 임플란트제공단계는 상기 임플란트 포장체에서 제2포장을 제거하는 단계, 제1포장과 내부의 임플란트를 플라즈마 방전장비 내로 제공하여 제1포장 내의 임플란트가 외부로부터 오염되지 않은 채로 표면개질되는 효과를 준다.In the present invention, the implant providing step provides an implant package further comprising a second package surrounding the first package from the outside of the first package into the plasma discharge device, wherein the implant providing step is performed in the implant package. The step of removing the second package, providing the first package and the implant inside the plasma discharge device, gives the effect that the implant in the first package is surface-modified without being contaminated from the outside.
본 발명은, 내부에 수용되는 적어도 하나의 임플란트, 상기 임플란트를 둘러싸며 내부를 폐색하는 제1포장 및 상기 제1포장의 외부에서 제1포장을 둘러싸며 내부를 폐색하는 제2포장을 포함여 임플란트가 오염되지 않은 상태에서 내부에 수용된 임플란트 표면이 친수성으로 개질될 수 있다.The present invention includes at least one implant accommodated therein, a first packaging surrounding the implant and occluding the inside, and a second packaging surrounding and occluding the inside of the first packaging from the outside of the first packaging. The surface of the implant accommodated therein may be modified to be hydrophilic in the uncontaminated state.
본 발명은, 상기 제1포장은 일단이 상기 제1포장 내의 임플란트와 접촉하고 타단은 상기 제1포장의 외부로 노출되도록 구비되는 도체 포스트를 포함하여 임플란트 포장체의 손상 없이 플라즈마 방전장비 내에서 임플란트가 전극으로 기능하여 기체를 이온화시키는 효과를 가진다.In the present invention, the first package includes a conductor post provided so that one end contacts the implant in the first package and the other end is exposed to the outside of the first package. It functions as an electrode and has the effect of ionizing the gas.
본 발명은, 상기 제1포장은 상기 임플란트의 적어도 일부분을 둘러싸며 플라즈마가 통과할 수 있도록 구비되는 플라즈마 투과부, 상기 임플란트의 적어도 다른 일부분을 둘러싸며 플라즈마가 통과할 수 없도록 구비되는 플라즈마 차폐부를 포함하여 제1포장을 통해 플라즈마가 이동하여 임플란트의 표면개질을 효율적으로 수행할 수 있다.In the present invention, the first package includes a plasma transmitting part that surrounds at least a portion of the implant and is provided to allow plasma to pass through, and a plasma shield that surrounds at least another part of the implant so that plasma cannot pass through it. Plasma moves through the first packaging to efficiently perform surface modification of the implant.
본 발명은, 임플란트 포장체, 상기 임플란트 포장체를 내부에 형성되는 챔버 수용하며 상기 챔버에 플라즈마를 방전시켜 상기 임플란트 포장체 내의 임플란트의 표면을 개질하는 플라즈마 방전장비를 포함하여 챔버에서 플라즈마를 발생시키는 효과를 가진다.The present invention includes an implant package body, a plasma discharge device for accommodating a chamber formed inside the implant package body, and discharging plasma to the chamber to modify the surface of the implant in the implant package body to generate plasma in the chamber have an effect
본 발명은, 상기 플라즈마 방전장비는 내부 일측면에서 챔버 내측을 면하도록 구비되는 도체전극, 챔버의 일측으로부터 챔버 내측으로 연장형성되는 접촉부 및 상기 내부공간과 연결되어 내부공간의 공기를 빼내도록 구비되는 공기인출부를 포함하고, 상기 도체전극과 접촉부에 전류가 인가되어 내부공간에서 플라즈마를 발생시킬 수 있다.According to the present invention, the plasma discharge device is connected to a conductive electrode provided to face the inside of the chamber from one side of the inner side, a contact portion extending from one side of the chamber to the inside of the chamber, and connected to the inner space to extract air from the inner space An air outlet may be included, and a current may be applied to the conductor electrode and the contact portion to generate plasma in the inner space.
본 발명은, 상기 접촉부는 제1포장을 외부에서 내부로 관통하여 상기 제1포장 내부의 임플란트와 접촉하여 상기 임플란트에 전류가 통하도록 함으로써 임플란트가 전극으로 기능하도록 하는 효과가 있다.The present invention has the effect of allowing the implant to function as an electrode by penetrating the first package from the outside to the inside and allowing the current to flow through the implant by contacting the implant inside the first package.
본 발명은, 상기 접촉부는 상기 플라즈마 방전장비의 내부에서 탈착가능하도록 구비되어 임플란트 포장체의 타입에 따라 형상이 바뀔 수 있다. In the present invention, the contact portion is provided to be detachable from the inside of the plasma discharge device, so that the shape can be changed according to the type of the implant package.
도 1은 임플란트의 식립 후 안정성을 나타낸 도면1 is a view showing the stability after implantation of the implant;
도 2는 본 발명에 따른 플라즈마를 통한 임플란트 표면개질 방법의 흐름도Figure 2 is a flow chart of the implant surface modification method through plasma according to the present invention
도 3은 본 발명에 따른 플라즈마를 통한 임플란트 표면개질 방법(S)에서 임플란트 포장체(30)가 플라즈마 방전장비(10)에 제공되는 것을 도시한 도면3 is a view showing that the implant package 30 is provided to the plasma discharge device 10 in the implant surface modification method (S) through plasma according to the present invention
도 4는 본 발명의 일 실시예에 따른 플라즈마 방전장비(10)의 단면도4 is a cross-sectional view of a plasma discharge device 10 according to an embodiment of the present invention.
도 5는 본 발명의 일 실시예에 따른 임플란트 포장체(30)의 단면도5 is a cross-sectional view of the implant package 30 according to an embodiment of the present invention.
도 6은 본 발명의 일 실시예에 따른 임플란트 포장체(30)의 단면도6 is a cross-sectional view of the implant package 30 according to an embodiment of the present invention.
도 7은 본 발명의 다른 실시예에 따른 임플란트 포장체(30)의 단면도7 is a cross-sectional view of the implant package 30 according to another embodiment of the present invention.
도 8은 본 발명의 다른 실시예에 따른 임플란트 포장체(30)의 단면도8 is a cross-sectional view of the implant package 30 according to another embodiment of the present invention.
도 9는 본 발명의 일 실시예에 따른 임플란트제공단계(S10)의 흐름도9 is a flowchart of an implant providing step (S10) according to an embodiment of the present invention;
도 10은 본 발명의 일 실시예에 따른 컨택단계(S2)에서 접촉부(133)와 임플란트(31)의 접촉을 도시한 도면10 is a view showing the contact between the contact portion 133 and the implant 31 in the contact step (S2) according to an embodiment of the present invention.
도 11은 본 발명의 일 실시예에 따른 컨택단계(S2)에서 도체 포스트(335)를 통한 접촉부(133)와 임플란트(31)의 연결을 도시한 도면11 is a view showing the connection between the contact portion 133 and the implant 31 through the conductor post 335 in the contact step (S2) according to an embodiment of the present invention.
도 12는 본 발명의 다른 일 실시예에 따른 플라즈마를 통한 임플란트 표면개질 방법의 흐름도12 is a flowchart of an implant surface modification method through plasma according to another embodiment of the present invention;
도 13은 본 발명의 일 실시예에 따른 개질단계(S7)에서 플라즈마가 임플란트(31) 표면으로 진행하는 것을 도시한 도면13 is a view showing that plasma proceeds to the surface of the implant 31 in the reforming step (S7) according to an embodiment of the present invention;
도 14는 본 발명의 일 실시예에 따라 표면처리한 임플란트와 표면처리하지 않은 임플란트 표면에 대한 물의 접촉을 비교한 도면14 is a view comparing the contact of water to the implant surface treated according to an embodiment of the present invention and the implant surface that is not surface treated.
이하에서는 본 발명에 따른 플라즈마를 통한 임플란트 표면개질 방법의 바람직한 실시 예들을 첨부된 도면을 참조하여 상세히 설명한다. 하기에서 본 발명을 설명함에 있어 공지의 기능 또는 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명을 생략하도록 한다. 특별한 정의가 없는 한 본 명세서의 모든 용어는 본 발명이 속하는 기술분야의 통상의 지식을 가진 기술자가 이해하는 당해 용어의 일반적 의미와 동일하고 만약 본 명세서에서 사용된 용어의 의미와 충돌하는 경우에는 본 명세서에서 사용된 정의에 따른다.Hereinafter, preferred embodiments of the implant surface modification method through plasma according to the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, if it is determined that a detailed description of a well-known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. Unless otherwise defined, all terms in this specification have the same general meaning as understood by those of ordinary skill in the art to which the present invention belongs, and in case of conflict with the meaning of the terms used in this specification, the According to the definition used in the specification.
명세서 전체에서, 어떤 부분이 어떤 구성요소를 "포함"한다고 할 때, 이는 특별히 반대되는 기재가 없는 한 다른 구성요소를 제외하는 것이 아니고, 다른 구성요소 또한 더 포함할 수 있는 것을 의미하며, 명세서에 기재된 "~부" 등의 용어는 적어도 하나 이상의 기능이나 동작을 처리하는 단위를 의미한다. 또한, 어떤 구성요소간 "연결"된다고 할 때, 이는 구성요소끼리 직접 접촉하며 체결된다는 것에 한정되는 것이 아니라 다른 구성요소를 통하여 체결되는 것을 포함하며, 체결되어있지 않더라도 소정의 힘이나 에너지를 전달할 수 있도록 배치된다는 것을 의미할 수 있다. 이하, 첨부한 도면을 참조하여 본 발명의 바람직한 실시예를 설명함으로써 본 발명을 상세히 설명한다.Throughout the specification, when a part "includes" a certain component, it does not exclude other components unless otherwise stated, and it means that other components may also be further included, The described terms such as “~ unit” mean a unit that processes at least one function or operation. In addition, when it is said to be "connected" between certain components, it is not limited to being fastened in direct contact with each other, but includes fastening through other components, and can transmit a predetermined force or energy even if it is not fastened. It may mean that it is placed so that Hereinafter, the present invention will be described in detail by describing preferred embodiments of the present invention with reference to the accompanying drawings.
도 2는 본 발명의 일 실시예에 따른 플라즈마를 통한 임플란트 표면개질 방법(S)의 흐름도이다. 플라즈마를 통한 임플란트 표면개질 방법(S)은 임플란트가 포장되어 밀봉된 상태에서 임플란트의 표면을 친수성으로 개질함으로써, 뼈 및/또는 주변 조직이 임플란트에 쉽게 달라붙어 골유합 기간을 단축시켜 임플란트의 초기 안정성을 향상시킴과 동시에 임플란트의 표면개질 과정에서 임플란트가 공기에 노출되어 오염되는 것을 방지할 수 있다. 상기 플라즈마를 통한 임플란트 표면개질 방법(S)은 임플란트 제공단계(S1), 컨택단계(S2), 기압하강단계(S3), 전류인가단계(S5) 및 개질단계(S7)를 포함한다.Figure 2 is a flow chart of the implant surface modification method (S) through plasma according to an embodiment of the present invention. The implant surface modification method (S) through plasma improves the initial stability of the implant by shortening the period of osseointegration by modifying the surface of the implant to be hydrophilic while the implant is packaged and sealed, so that the bone and/or surrounding tissues easily adhere to the implant. At the same time, it is possible to prevent contamination of the implant from exposure to air during the surface modification process of the implant. The implant surface modification method (S) through the plasma includes an implant providing step (S1), a contact step (S2), a pressure drop step (S3), a current application step (S5) and a modification step (S7).
플라즈마를 통한 임플란트 표면개질 방법(S)을 이하에서 설명함에 앞서, 도 3 내지 도 8을 참고하여 플라즈마를 통한 임플란트 표면개질 방법(S)에 사용되는 플라즈마 방전장비(10)와 임플란트 포장체(30)를 설명하도록 하겠다. 플라즈마 방전장비(10)는 챔버에 플라즈마를 방전시킬 수 있도록 구비되며 임플란트 포장체(30)를 수용하여 내부에서 플라즈마 방전을 통해 임플란트의 표면을 친수성으로 개질할 수 있다. 도 3에서와 같이, 임플란트 포장체(30)는 표면개질 시 플라즈마 방전장비(10) 내부에 수용되는데, 적어도 하나 이상의 임플란트가 상기 플라즈마 방전장비(10) 내에서 표면이 친수성으로 개질될 수 있고, 바람직하게는 상기 임플란트가 포장된 채로 플라즈마 방전장비(10) 내로 제공될 수 있다. 상기 플라즈마 방전장비(10)는 하우징(11), 챔버(12), 방전부(13) 및 공기인출부(15)를 포함한다.Prior to describing the implant surface modification method (S) through plasma below, the plasma discharge device 10 and the implant package body 30 used in the implant surface modification method (S) through plasma with reference to FIGS. 3 to 8 . ) will be explained. The plasma discharge device 10 is provided to discharge plasma in the chamber and accommodates the implant packaging body 30 and can modify the surface of the implant to be hydrophilic through plasma discharge from the inside. As shown in Figure 3, the implant package 30 is accommodated in the plasma discharge device 10 when the surface is modified, at least one or more implants can be modified to have a hydrophilic surface in the plasma discharge device 10, Preferably, the implant may be provided into the plasma discharge device 10 in a packaged state. The plasma discharge device 10 includes a housing 11 , a chamber 12 , a discharge unit 13 , and an air outlet 15 .
도 3 및 도 4를 참고하면, 상기 하우징(11)은 플라즈마 방전장비(10)의 전체적인 외형을 구성하며, 일측에 개구부를 형성하고 버튼 등의 조작을 통해 개구부를 여닫음으로써 개구부를 폐색하여 내부공간에 형성되는 챔버(12)가 밀폐될 수 있도록 구비될 수 있다. 상기 하우징(11)은 인공관절 시술에 사용되는 임플란트 포장체(30)가 내부에 수용되도록 소정의 크기를 가짐이 바람직하다.3 and 4, the housing 11 constitutes the overall appearance of the plasma discharge device 10, and forms an opening on one side and closes the opening by operating a button, etc. The chamber 12 formed in the space may be provided to be sealed. The housing 11 preferably has a predetermined size so that the implant package 30 used for artificial joint surgery is accommodated therein.
상기 챔버(12)은 상기 플라즈마 방전장비(10)의 내부공간에 형성되며, 하우징(11)에 의해 밀폐됨으로써 외부와 차단될 수 있다. 상기 챔버(12)에 후술할 임플란트 포장체(30)가 수용되며, 챔버(12)에서 전류에 의해 플라즈마가 방전되어 임플란트 표면을 친수성으로 개질할 수 있다. 상기 챔버(12) 내부의 기압은 후술하는 공기인출부(15)에 의해 진공에 가깝게 낮아질 수 있으며, 바람직하게는 3torr 내외의 압력이 유지될 수 있다.The chamber 12 is formed in the inner space of the plasma discharge device 10 and can be blocked from the outside by being sealed by the housing 11 . An implant package 30 to be described later is accommodated in the chamber 12 , and plasma is discharged by an electric current in the chamber 12 to modify the implant surface to be hydrophilic. The atmospheric pressure inside the chamber 12 may be lowered to close to vacuum by an air outlet 15 to be described later, and preferably, a pressure of about 3 torr may be maintained.
상기 방전부(13)는 상기 플라즈마 방전장비(10)의 내부에서 전류가 인가될 수 있도록 구비된다. 상기 방전부(13)는 전류가 흐를 수 있는 도체로 형성되며, 소정의 넓이를 가진 금속 판 또는 금속 판이 절곡된 형태를 가질 수 있다. 상기 방전부(13)는 챔버(12) 내에 수용된 임플란트가 방전 시 전극으로 기능할 수 있도록 임플란트와 접촉하기 위해 돌출된 형상을 가질 수도 있다. 본 발명의 바람직한 일 실시예에서는 임플란트 포장체(30)가 챔버(12)에 수용되는데, 이때 임플란트 포장체(30)의 평면 또는 임플란트 포장체(30)를 정사영한 면적과 상응하거나 그보다 넓은 크기를 가진 방전부가 형성될 수 있다. 외부전원을 통해 방전부(13)에 전류가 인가되면 상기 방전부(13)가 전극으로 기능하여 챔버(12)에서 플라즈마가 방전될 수 있다. 상기 방전부(13)는 도체전극(131)과 접촉부(133)를 포함한다.The discharge unit 13 is provided so that current can be applied inside the plasma discharge device 10 . The discharge unit 13 is formed of a conductor through which current can flow, and may have a metal plate having a predetermined width or a bent metal plate. The discharge unit 13 may have a protruding shape to contact the implant so that the implant accommodated in the chamber 12 can function as an electrode during discharge. In a preferred embodiment of the present invention, the implant package 30 is accommodated in the chamber 12, and at this time, the size corresponding to or larger than the plane of the implant package 30 or the area projected on the implant package 30 is orthogonal. A discharging unit having an excitation may be formed. When a current is applied to the discharge unit 13 through an external power source, the discharge unit 13 functions as an electrode to discharge plasma in the chamber 12 . The discharge unit 13 includes a conductor electrode 131 and a contact unit 133 .
상기 도체전극(131)은 플라즈마 방전장비(10)의 내부 일측면에서 챔버(12) 측을 면하도록 구비된다. 본 발명의 일 실시예에서, 도체전극(131)은 하우징의 일면에 구비되어 챔버(12) 상측에서 챔버를 면하도록 구비될 수 있으며, 챔버 내의 다른 위치에서 챔버(12) 내측을 면하도록 구비될 수도 있다. 상기 도체천극(131)은 판의 형상을 가지면서 연장될 수 있다. 상기 도체전극(131)은 챔버(12)에 수용되는 임플란트 또는 임플란트 포장체보다 넓은 면적으로 연장됨이 바람직하다. The conductor electrode 131 is provided so as to face the chamber 12 side from one inner side of the plasma discharge device 10 . In one embodiment of the present invention, the conductive electrode 131 may be provided on one surface of the housing to face the chamber from the upper side of the chamber 12, and may be provided to face the inside of the chamber 12 at another position within the chamber. may be The conductor porcelain 131 may extend while having the shape of a plate. The conductive electrode 131 preferably extends over a larger area than the implant or implant package accommodated in the chamber 12 .
상기 접촉부(133)는 플라즈마 방전장비(10)의 내부의 다른 일측면에서 챔버(12) 측을 면하면서 전류가 통하도록 구비되는데, 후술하는 전류인가단계(S5)에서 전류가 인가될 시 임플란트(31)와 접촉하여 임플란트에 전류가 흐르도록 하는 구성이다. 임플란트는 도체 재질로, 바람직하게는 티타늄으로 구비될 수 있어 접촉부(133)에 의해 전류가 통하도록 연결된 후 전류가 인가되면 임플란트가 전극으로 기능하여 챔버(12) 또는 임플란트 포장체(30) 내의 공기가 이온화되어 플라즈마가 발생할 수 있다. 이를 위하여 상기 접촉부(133)는 도 4에 도시되는 바와 같이 챔버의 일측으로부터 챔버 내측으로 연장형성될 수 있다. 상기 접촉부(133)는 챔버(12)의 바닥 또는 일측면으로부터 임플란트 포장체(30)가 수용되는 챔버(12) 쪽으로 단면적이 감소하며 연장되는 탐침 형상으로 형성될 수 있고, 일정한 단면적을 가지면서 연장되는 포스트 형상으로 형성될 수도 있다. 상기 접촉부(133)는 제1포장(33)을 외부에서 내부로 관통하여 상기 제1포장 내부의 임플란트(31)와 접촉하여 상기 임플란트에 전류가 통하도록 할 수 있다. 상기 접촉부(133)는 제1포장에 형성된 도체 포스트와 접촉하여 상기 임플란트에 전류가 통하도록 할 수 있다. 또한, 상기 접촉부(133)는 플라즈마 방전장비(10)의 내부에 탈착가능하도록 구비되어 플라즈마 방전장비(10)에 수용되는 임플란트 포장체(30)의 유형에 따라 탐침 형상과 포스트 형상이 바뀌어 임플란트와 접촉할 수도 있다. The contact part 133 is provided so that current flows while facing the chamber 12 side from the other side of the inside of the plasma discharge device 10. 31) to allow current to flow through the implant. The implant may be made of a conductive material, preferably titanium, so that the implant functions as an electrode when the current is applied after being connected to the contact portion 133 to allow current to flow through the chamber 12 or the air in the implant packaging body 30 . may be ionized to generate plasma. To this end, as shown in FIG. 4 , the contact part 133 may be formed to extend from one side of the chamber to the inside of the chamber. The contact portion 133 may be formed in a probe shape extending from the bottom or one side of the chamber 12 toward the chamber 12 in which the implant package 30 is accommodated, and may be formed in a probe shape that extends while having a constant cross-sectional area. It may be formed in the shape of a post. The contact portion 133 may penetrate the first packaging 33 from the outside to the inside and contact the implant 31 in the first packaging so that an electric current flows through the implant. The contact portion 133 may be in contact with the conductor post formed in the first packaging to allow current to flow through the implant. In addition, the contact portion 133 is provided so as to be detachable inside the plasma discharge device 10, the probe shape and the post shape change depending on the type of the implant package 30 accommodated in the plasma discharge device 10, so that the implant and may be contacted.
상기 도체전극(131)과 접촉부(133)는 전류가 인가될 시 서로 양극과 음극으로 기능하여 소정 압력 하의 챔버의 기체가 플라즈마로 이온화된다. 도체전극(131)과 접촉부(133)는 금속 재질일 수 있다. 플라즈마 방전은 직류를 통한 DC 글로우 방전, 교류전압 인가를 통한 AC 또는 RF 글로우 방전이 수행될 수 있다. 본 발명의 바람직한 일 실시예에서는 상기 도체전극(131)과 접촉부(133)에 고압의 전류를 교류로 인가함으로써 진공에 가까운 상태의 챔버(12)에서 플라즈마가 방전될 수 있도록 한다.The conductor electrode 131 and the contact portion 133 function as an anode and a cathode when a current is applied, so that the gas in the chamber under a predetermined pressure is ionized into plasma. The conductive electrode 131 and the contact portion 133 may be made of a metal material. Plasma discharge may be DC glow discharge through direct current, AC or RF glow discharge through AC voltage application. In a preferred embodiment of the present invention, a high-voltage current is applied to the conductor electrode 131 and the contact portion 133 in alternating current so that plasma can be discharged from the chamber 12 in a state close to vacuum.
도체전극(131)은 접촉부(133)와 대향하며 면하도록 구비될 수 있다. 본 발명의 일 실시예에서, 도체전극(131)이 챔버(12)의 상측에서 아래쪽을 면하면서 구비되고 접촉부(133)는 도체전극(131)과 대향하도록 챔버(12)의 하측에서 위쪽을 면하도록 구비될 수 있으며, 본 발명의 다른 일 실시예에서는 도체전극(131)이 챔버(12)의 일측 옆면에 구비된다면 접촉부(133)는 챔버(12)의 반대쪽 옆면에서 안쪽을 면하면서 구비될 수 있다. 본 발명의 또다른 일 실시예에서는 도체전극(131)과 접촉부(133)가 서로 면하지 않도록 구비될 수도 있다.The conductor electrode 131 may be provided to face the contact portion 133 . In one embodiment of the present invention, the conductive electrode 131 is provided facing downward from the upper side of the chamber 12 , and the contact portion 133 faces upward from the lower side of the chamber 12 to face the conductor electrode 131 . In another embodiment of the present invention, if the conductive electrode 131 is provided on one side of the chamber 12, the contact portion 133 may be provided while facing the inside from the opposite side of the chamber 12. have. In another embodiment of the present invention, the conductor electrode 131 and the contact portion 133 may be provided so as not to face each other.
상기 공기인출부(15)는 플라즈마 방전장비의 챔버(12)에 연결되어 챔버(12)의 공기를 빼내거나 공급할 수 있다. 공기인출부(15)는 챔버(12)과 유체연통하도록 연결된다. 상기 공기인출부(15)는 진공펌프 등을 통해 챔버(12)의 기체를 외부 또는 챔버(12)과 별도로 구성된 공간으로 빼냄으로써 챔버(12)의 기압을 진공에 가깝게 하강시킬 수 있다. 공기인출부(15)에 의해 기압이 낮아진 챔버(12)의 기체는 상기 도체전극(131) 및 접촉부(133)에 전류가 인가될 시 플라즈마로 이온화될 수 있다.The air outlet 15 may be connected to the chamber 12 of the plasma discharge device to extract or supply air from the chamber 12 . The air outlet 15 is connected in fluid communication with the chamber 12 . The air outlet 15 may lower the atmospheric pressure of the chamber 12 to close to vacuum by withdrawing the gas from the chamber 12 to the outside or a space configured separately from the chamber 12 through a vacuum pump or the like. The gas in the chamber 12 whose atmospheric pressure is lowered by the air outlet 15 may be ionized into plasma when a current is applied to the conductor electrode 131 and the contact portion 133 .
다음으로, 도 5 내지 도 8을 참고하여 본 발명의 플라즈마 방전장비(10) 내에 수용되는 임플란트 포장체(30)를 설명하도록 한다. 임플란트 포장체(30)는 플라즈마 방전장비(10) 내에 제공되어 챔버(12)에서 방전된 플라즈마에 의해 임플란트의 표면이 친수성으로 개질될 수 있다. 상기 임플란트 포장체(30)는 적어도 하나의 임플란트(31), 제1포장(33), 고정부재(34) 및 제2포장(35)을 포함할 수 있다. 본 발명의 바람직한 일 실시예에서, 플라즈마 방전장비(10) 내에 수용되는 임플란트 포장체(30)는 임플란트(31)가 외부의 오염물질에 의해 오염되지 않도록 임플란트(31)를 내부에 수용한 채로 제공될 수 있다.Next, the implant package 30 accommodated in the plasma discharge device 10 of the present invention will be described with reference to FIGS. 5 to 8 . The implant package 30 is provided in the plasma discharge device 10 so that the surface of the implant can be modified to be hydrophilic by the plasma discharged from the chamber 12 . The implant package 30 may include at least one implant 31 , a first package 33 , a fixing member 34 , and a second package 35 . In a preferred embodiment of the present invention, the implant package 30 accommodated in the plasma discharge device 10 is provided with the implant 31 accommodated therein so that the implant 31 is not contaminated by external contaminants. can be
상기 임플란트(31)는 임플란트 포장체(30) 내에서 플라즈마 방전장비(10)에 제공되고, 본 발명에 따른 플라즈마를 통한 임플란트 표면개질 방법(S)에 의해 표면이 개질되는 구성이다. 임플란트(31)는 덴탈 임플란트이거나, 인공관절에 사용되는 임플란트일 수 있다. 상기 임플란트는 바람직하게는 티타늄 표면을 가질 수 있다. 임플란트(31)는 다공성(porous) 표면을 가질 수 있다. 이때 임플란트(31)는 플라즈마 방전장비(10)의 내면과 접촉하지 않은 상태로 표면이 개질될 수 있다. 도 5에서 볼 수 있는 것과 같이, 상기 임플란트(31)는 제1포장(33) 내에 수용되어있으며, 제1포장(33)이 임플란트(31)의 바깥을 둘러싸도록 함으로써 외부의 오염물질로부터 오염이 방지될 수 있다. 상기 임플란트(31)는 제2포장(35)에 의해 이중으로 포장될 수도 있다.The implant 31 is provided to the plasma discharge device 10 in the implant package 30, and the surface is modified by the implant surface modification method (S) through plasma according to the present invention. The implant 31 may be a dental implant or an implant used in an artificial joint. The implant may preferably have a titanium surface. The implant 31 may have a porous surface. In this case, the surface of the implant 31 may be modified without contacting the inner surface of the plasma discharge device 10 . As can be seen in FIG. 5 , the implant 31 is accommodated in the first packaging 33 , and the first packaging 33 surrounds the outside of the implant 31 so that contamination is prevented from external contaminants. can be prevented. The implant 31 may be double packaged by the second packaging 35 .
상기 제1포장(33)은 상기 임플란트(31)를 둘러싸도록 형성될 수 있다. 제1포장(33)은 임플란트(31)의 오염을 막기 위해 제공될 수 있다. 제1포장(33)은 임플란트(31)를 내부에 수용한 채로 플라즈마 방전장비(10) 내로 제공될 수 있다. 임플란트(31)의 표면 개질 후 제1포장(33)에 의해 임플란트가 오염되는 것이 방지될 수 있다. 제1포장(33)은 플라즈마 투과부(331)와 플라즈마 차폐부(333)를 포함할 수 있다.The first packaging 33 may be formed to surround the implant 31 . The first packaging 33 may be provided to prevent contamination of the implant 31 . The first package 33 may be provided into the plasma discharge device 10 while accommodating the implant 31 therein. Contamination of the implant by the first packaging 33 after the surface modification of the implant 31 can be prevented. The first package 33 may include a plasma transmitting part 331 and a plasma shielding part 333 .
도 5 및 도 6을 참고하면, 상기 플라즈마 투과부(331)는 임플란트(31)의 적어도 일부분을 둘러싸며 임플란트(31)의 포장을 구성하도록 구비된다. 플라즈마 투과부(331)는 플라즈마가 통과할 수 있는 재질로 형성될 수 있다. 본 발명의 바람직한 일 실시예에서 상기 플라즈마 투과부(331)는 가요성의 멤브레인으로 형성될 수 있다. 상기 플라즈마 투과부(331)는 임플란트 포장체(30) 내부와 외부에서 공기는 통하면서, 세균, 먼지와 같은 이물질은 통하지 않도록 구비될 수 있다. 플라즈마 투과부(331)는 내부의 습기를 외부로 배출하면서 외부의 습기는 내부로 들어오는 것을 막도록 형성될 수 있다. 상기 플라즈마 투과부(331)는 투습지로 구비될 수 있다. 내부의 습기가 외부로 방출될 수 있으며, 방전된 플라즈마가 투습지를 통과하여 임플란트(31) 방향으로 진행할 수 있다. 본 발명의 다른 일 실시예에서는 플라즈마 투과부(331)가 임플란트의 한쪽 방향에서 구비되는 것이 아니라 양쪽에서 구비될 수도 있다. 플라즈마 투과부(331)가 임플란트(31)의 양쪽, 예를들면 상하측에 구비되면, 플라즈마 투과부(331)가 제1도체전극(131) 및 제2도체전극(133)과 면하도록 제공될 수 있어 플라즈마에 의한 표면개질이 더욱 촉진될 수 있다. 이 경우, 내부공간(12)에서 공기의 이온화에 의해 발생한 플라즈마가 플라즈마 투과부(331)를 통해 임플란트 포장체(31) 내부로 진행하여 임플란트(31) 표면을 개질할 수 있다.5 and 6 , the plasma transmitting part 331 surrounds at least a portion of the implant 31 and is provided to configure the packaging of the implant 31 . The plasma transmitting part 331 may be formed of a material through which plasma can pass. In a preferred embodiment of the present invention, the plasma transmitting part 331 may be formed of a flexible membrane. The plasma transmitting part 331 may be provided so that air passes through the implant packaging body 30 inside and outside, and foreign substances such as bacteria and dust do not pass through. The plasma transmitting part 331 may be formed to prevent external moisture from entering the inside while discharging the internal moisture to the outside. The plasma transmitting part 331 may be provided with moisture permeable paper. Moisture inside may be discharged to the outside, and the discharged plasma may pass through the moisture permeable paper and proceed toward the implant 31 . In another embodiment of the present invention, the plasma transmitting part 331 may be provided in both directions rather than in one direction of the implant. When the plasma transmitting part 331 is provided on both sides of the implant 31, for example, on the upper and lower sides, the plasma transmitting part 331 may be provided to face the first conductive electrode 131 and the second conductive electrode 133, Surface modification by plasma can be further promoted. In this case, the plasma generated by the ionization of air in the inner space 12 proceeds to the inside of the implant package 31 through the plasma transmitting part 331 to modify the surface of the implant 31 .
상기 플라즈마 차폐부(333)는 임플란트(31)의 다른 일부분을 둘러싸며 임플란트(31)의 포장을 구성한다. 플라즈마 차폐부(333)는 플라즈마가 통과할 수 없는 플라스틱으로 구성될 수 있으며, 바람직하게는 PET(폴리에틸렌 테레프탈레이트) 또는 PVC(폴리염화 비닐) 플라스틱 재질의 팩으로 구성된 블리스터 포장일 수 있다. 제2포장(333)은 제1포장(331)에 비해 상대적으로 경질로 구비되어 제1포장(33)의 전체적인 외관을 유지하도록 구비될 수 있다. 플라즈마 차폐부(333)는 비정형 형상을 가질 수도 있으며, 내부에 수용되는 임플란트(31)와 대략 상보적인 형상을 가질 수도 있다. 플라즈마 투과부(331)와 플라즈마 차폐부(333)는 적어도 일부분이 서로 탈착가능하도록 구비될 수 있다. 본 발명의 바람직한 일 실시예에서, 투습지로 형성되는 플라즈마 투과부(331)는 프라스틱으로 형성되는 플라즈마 차폐부(333)로부터 제거될 수 있도록 구비됨으로써 임플란트의 표면 개질 후 임플란트(31)를 제1포장(33) 내에서 꺼낼 수 있도록 할 수 있다.The plasma shield 333 surrounds another portion of the implant 31 and constitutes the packaging of the implant 31 . The plasma shield 333 may be made of a plastic that plasma cannot pass through, and preferably may be a blister packaging made of a PET (polyethylene terephthalate) or PVC (polyvinyl chloride) plastic pack. The second packaging 333 may be provided to be relatively hard compared to the first packaging 331 to maintain the overall appearance of the first packaging 33 . The plasma shield 333 may have an atypical shape, and may have a substantially complementary shape to the implant 31 accommodated therein. At least a portion of the plasma transmitting part 331 and the plasma shielding part 333 may be provided to be detachable from each other. In a preferred embodiment of the present invention, the plasma transmitting part 331 formed of a moisture permeable paper is provided to be removable from the plasma shielding part 333 formed of plastic, so that the implant 31 after surface modification of the implant is first packaged ( 33) can be taken out from within.
도 7 및 도 8에 도시된 본 발명의 다른 일 실시예를 참고하면, 상기 제1포장(33)은 도체 포스트(335)를 더 포함할 수 있다. 상기 도체 포스트(335)는 일단이 제1포장 내의 임플란트와 접촉하고 타단은 상기 제1포장의 외부로 노출되도록 구비될 수 있다. 상기 도체 포스트(335)는 임플란트(31)와 임플란트(31)를 둘러싼 제1포장(33) 외부 사이에서 전류가 통하도록 제1포장(33)의 내부와 외부를 연결하는 매개체로 기능할 수 있다. 후술하겠으나, 상기 도체 포스트(335)는 제1포장(33) 외부로 노출된 타단이 접촉부(133)와 접촉함으로써 임플란트(31)와 접촉한 일단을 통해 접촉부(133)와 임플란트(31) 사이에 전류가 통하도록 할 수 있다. 본 발명의 다른 일 실시예에서는 상기 도체 포스트(335)의 타단이 제2포장(35)의 외부까지 연장되어 타단이 제2포장(35)의 외부로 노출되도록 구비될 수도 있다.Referring to another embodiment of the present invention shown in FIGS. 7 and 8 , the first packaging 33 may further include a conductor post 335 . The conductor post 335 may be provided such that one end contacts the implant in the first package and the other end is exposed to the outside of the first package. The conductor post 335 may function as a medium connecting the inside and the outside of the first packaging 33 so that current passes between the implant 31 and the outside of the first packaging 33 surrounding the implant 31 . . As will be described later, the conductor post 335 is disposed between the contact portion 133 and the implant 31 through one end contacting the implant 31 as the other end exposed to the outside of the first packaging 33 comes into contact with the contact portion 133 . current can pass through. In another embodiment of the present invention, the other end of the conductor post 335 may extend to the outside of the second packaging 35 so that the other end is exposed to the outside of the second packaging 35 .
상기 고정부재(34)는 상술한 제1포장(33)과 임플란트(31) 사이에서 임플란트(31)를 고정하도록 구비될 수 있다. 고정부재(34)는 복수의 엘리먼트(element)로 구성될 수 있으나, 서로 연결된 단일의 엘리먼트로서 임플란트(31)와 임플란트(31)를 포장하는 제1포장(33) 사이에서 임플란트(31)를 고정할 수도 있다. 고정부재(34)는 충진재, 보강재와 같은 임플란트(31)의 이동이나 흔들림을 방지한다. 상기 임플란트(31)에는 적어도 일부의 표면에 다공성(porous) 구조가 형성될 수 있는데 임플란트(31)가 제1포장(33) 내에서 흔들리거나 제1포장(33)과 충돌함에 따라 표면에 집이 발생하거나 다공성 구조가 손상될 수 있다. 상기 고정부재(34)는 임플란트(31)를 제1포장(33) 내에서 고정함으로써 임플란트의 손상을 방지할 수 있다.The fixing member 34 may be provided to fix the implant 31 between the first packaging 33 and the implant 31 described above. The fixing member 34 may be composed of a plurality of elements, but as a single element connected to each other, the implant 31 is fixed between the implant 31 and the first packaging 33 for packaging the implant 31 . You may. The fixing member 34 prevents movement or shaking of the implant 31 , such as a filler or a reinforcing material. A porous structure may be formed on at least a portion of the surface of the implant 31 , and as the implant 31 shakes in the first packaging 33 or collides with the first packaging 33 , the surface may collect on the surface. or the porous structure may be damaged. The fixing member 34 can prevent damage to the implant by fixing the implant 31 in the first packaging 33 .
상기 고정부재(34)는 플라즈마가 통과할 수 있는 구조를 가지면서 형성될 수 있다. 도 5 내지 도 8에서 볼 수 있는 것과 같이, 고정부재(34)는 서로 이격된 복수의 엘리먼트의 집합으로 형성됨으로써 고정부재 사이의 공간으로 플라즈마가 유동할 수 있도록 구비될 수 있으며, 고정부재가 서로 연결된 일체로 형성되더라도 플라즈마가 고정부재 바깥으로부터 안쪽의 임플란트(31)까지 연통가능하도록 공극 및/또는 빈 공간을 가질 수 있다. 이렇게 형성된 플라즈마가 통과할 수 있는 구조는 바람직하게는 플라즈마 투과부(331)와 면하면서, 후술하는 플라즈마 투과부(331)를 통해 제1포장(33) 내로 유입되는 플라즈마가 임플란트 표면을 개질하도록 할 수 있다.The fixing member 34 may be formed while having a structure through which plasma can pass. As can be seen in FIGS. 5 to 8 , the fixing member 34 may be provided so that plasma can flow into the space between the fixing members by being formed by a set of a plurality of elements spaced apart from each other, and the fixing members are separated from each other. Even if it is formed integrally connected, it may have voids and/or empty spaces so that plasma can communicate from the outside of the fixing member to the implant 31 on the inside. The structure through which the plasma formed in this way can pass is preferably facing the plasma transmitting part 331, and the plasma flowing into the first package 33 through the plasma transmitting part 331 to be described later can modify the implant surface. .
상기 제2포장(35)은 상기 제1포장(33)을 둘러싸도록 형성될 수 있다. 제2포장(35)은 제1포장(33)의 경우와 같이 임플란트(31)의 오염을 막기 위해 제공될 수 있다. 수술실에서는 환자의 신체가 오염되지 않도록 하는 것이 중요한데, 이를 위하여 제2포장(35) 내에 제1포장(33)과 임플란트(31)가 수용된 채로 수술실 내로 제공될 수 있으며, 수술실 내에서 제2포장(35)이 제거된 후 제1포장(33)과 임플란트(31)가 플라즈마 방전장비(10)에 제공될 수 있다. 본 발명의 다른 일 실시예에서는 제1포장(33)과 임플란트(31)를 포장하는 제2포장(35)도 함께 플라즈마 방전장비(10)에 제공될 수도 있다. 상기 제2포장(35)은 플라즈마 투과부(351)와 플라즈마 차폐부(353)를 포함할 수 있다. The second packaging 35 may be formed to surround the first packaging 33 . The second packaging 35 may be provided to prevent contamination of the implant 31 as in the case of the first packaging 33 . In the operating room, it is important not to contaminate the patient's body. For this purpose, the first packaging 33 and the implant 31 may be provided into the operating room with the first packaging 33 and the implant 31 accommodated in the second packaging 35, and the second packaging ( After 35) is removed, the first package 33 and the implant 31 may be provided to the plasma discharge device 10 . In another embodiment of the present invention, the first packaging 33 and the second packaging 35 for packaging the implant 31 may also be provided to the plasma discharge device 10 together. The second packaging 35 may include a plasma transmitting part 351 and a plasma shielding part 353 .
상기 플라즈마 투과부(351)는 제1포장(33)의 적어도 일부분을 둘러싸며 임플란트(31)의 외부 포장을 구성하도록 구비된다. 플라즈마 투과부(351)는 플라즈마가 통과할 수 있는 재질로 형성될 수 있다. 본 발명의 바람직한 일 실시예에서 상기 플라즈마 투과부(351)는 투습지로 구비될 수 있다. 플라즈마 투과부(351)는 플라즈마 투과부(331)와 면하도록 구성될 수 있다. 본 발명의 다른 일 실시예에서는 플라즈마 투과부(351)가 임플란트의 한쪽 방향에서 구비되는 것이 아니라 양쪽에서 구비될 수도 있다. The plasma transmission part 351 is provided to surround at least a portion of the first packaging 33 and constitute an outer packaging of the implant 31 . The plasma transmitting part 351 may be formed of a material through which plasma can pass. In a preferred embodiment of the present invention, the plasma transmitting part 351 may be provided with a moisture permeable paper. The plasma transmissive part 351 may be configured to face the plasma transmissive part 331 . In another embodiment of the present invention, the plasma transmitting part 351 may be provided in both directions rather than in one direction of the implant.
상기 플라즈마 차폐부(353)는 제1포장(33)의 다른 일부분을 둘러싸며 임플란트(31)의 외부 포장을 구성한다. 플라즈마 차폐부(353)는 플라즈마가 통과할 수 없는 플라스틱으로 구성될 수 있으며, 바람직하게는 PET(폴리에틸렌 테레프탈레이트) 또는 PVC(폴리염화 비닐) 플라스틱 재질의 팩으로 구성된 블리스터 포장일 수 있다. 제1포장(33)의 경우와 마찬가지로, 플라즈마 투과부(351)와 플라즈마 차폐부(353)는 적어도 일부분이 서로 탈착가능하도록 구비될 수 있다. The plasma shield 353 surrounds another portion of the first packaging 33 and constitutes the outer packaging of the implant 31 . The plasma shield 353 may be made of a plastic that plasma cannot pass through, and may preferably be a blister packaging made of a PET (polyethylene terephthalate) or PVC (polyvinyl chloride) plastic pack. As in the case of the first packaging 33 , the plasma transmitting part 351 and the plasma shielding part 353 may be provided such that at least a portion thereof is detachable from each other.
다시 도 2를 참고하면, 상기 임플란트제공단계(S1)는 임플란트 포장체(30)를 플라즈마 방전장비(10) 내에 제공하는 단계로, 상술한 바와 같이 적어도 하나 이상의 임플란트(31)가 플라즈마 방전장비(10) 내에서 친수성 표면개질될 수 있다. 이때, 상기 플라즈마 투과부(331)는 챔버(12)에서 도체전극(131) 또는 접촉부(133)와 면하도록 제공될 수 있다. 플라즈마 투과부(331)는 임플란트제공단계(S1)에서 상측을 향하도록 챔버(12)에 제공되어 방전된 플라즈마가 플라즈마 투과부(331)를 통하여 제1포장(33) 내로 진행할 수 있도록 함이 바람직하다. 본 발명의 일 실시예에서는, 상기 임플란트제공단계(S1)는 적어도 일부가 플라즈마가 통과할 수 있도록 구비되며 임플란트(31)를 둘러싸는 제1포장(33)을 더 포함하는 상기 임플란트 포장체(30)를 상기 플라즈마 방전장비(10) 내에 제공할 수 있다. 또한, 상기 임플란트제공단계(S1)는 제1포장(33)의 플라즈마 투과부(331)를 플라즈마 방전장비의 내부공간에서 도체전극(131)과 면하도록 제공할 수 있다. Referring back to Figure 2, the implant providing step (S1) is a step of providing the implant package 30 in the plasma discharge device 10, as described above, at least one or more implants 31 are plasma discharge device ( 10) can be hydrophilic surface-modified within. In this case, the plasma transmitting part 331 may be provided to face the conductor electrode 131 or the contact part 133 in the chamber 12 . The plasma transmitting unit 331 is preferably provided in the chamber 12 to face upward in the implant providing step (S1) so that the discharged plasma can proceed into the first package 33 through the plasma transmitting unit 331 . In one embodiment of the present invention, the implant providing step (S1) is provided so that at least a part of the plasma can pass through, the implant package body 30 further comprising a first package 33 surrounding the implant 31. ) may be provided in the plasma discharge device 10 . In addition, in the implant providing step (S1), the plasma transmitting part 331 of the first packaging 33 may be provided to face the conductor electrode 131 in the internal space of the plasma discharge device.
도 9를 참고하면, 상기 임플란트제공단계(S1)는 상술한 바와 같이 임플란트 포장체에서 제2포장을 제거하는 단계(S11), 제1포장과 내부의 임플란트를 플라즈마 방전장비 내로 제공하는 단계(S13)를 포함하여 제2포장(35)을 제거한 후 제1포장(33) 내의 임플란트(31)의 표면이 개질되도록 할 수 있다. 본 발명의 다른 일 실시예에서는, 제2포장을 제거하는 단계(S11)를 거치지 않고 제2포장(35)을 제1포장(33) 및 임플란트(31)와 함께 플라즈마 방전장비(10) 내에 제공할 수도 있다.Referring to FIG. 9 , the implant providing step (S1) includes removing the second package from the implant package as described above (S11), and providing the first package and the implant inside the plasma discharge device (S13). ), including, after removing the second packaging 35, the surface of the implant 31 in the first packaging 33 can be modified. In another embodiment of the present invention, the second packaging 35 is provided in the plasma discharge device 10 together with the first packaging 33 and the implant 31 without going through the step (S11) of removing the second packaging. You may.
도 10 및 도 11을 참고하면, 상기 컨택단계(S2)는 상술한 접촉부(133)와 임플란트(31)를 전류가 통하도록 연결시키는 단계이다. 이때, 도 10에서 도시되는 바와 같이 탐침 형상의 접촉부(133)가 제1포장(33)을 뚫고 들어와 제1포장을 외부에서 내부로 관통함으로써 임플란트(31)와 전류가 통하도록 접촉할 수 있다. 이를 위해서 상기 접촉부(133)는 챔버의 일측에서 챔버 내측으로 연장형성될 수 있다. 본 발명의 다른 일 실시예에서는 도 11에 도시된 바와 같이 제1포장(33)에 형성된 도체 포스트(335)의 단부에 접촉부(133)가 접촉함으로써 전류가 임플란트(31)로 통할 수 있도록 할 수도 있다. 본 발명에 따른 컨택단계(S2)에서는 수용된 임플란트 포장체(30)의 제1포장(33)에 도체 포스트(335)가 구비되었는지 여부에 따라 상기 접촉부(133)가 교체될 수 있다. 따라서, 상기 컨택단계(S2)는 접촉부가 접촉되기 전에 접촉부(133)를 교체하는 단계(미도시)를 포함할 수 있다.Referring to FIGS. 10 and 11 , the contacting step S2 is a step of connecting the above-described contact portion 133 and the implant 31 so that current passes through them. At this time, as shown in FIG. 10 , the probe-shaped contact portion 133 penetrates the first packaging 33 and penetrates the first packaging from the outside to the inside, thereby making contact with the implant 31 so that current flows. To this end, the contact portion 133 may be formed to extend from one side of the chamber to the inside of the chamber. In another embodiment of the present invention, as shown in FIG. 11 , the contact portion 133 is in contact with the end of the conductor post 335 formed in the first packaging 33 so that current can pass through the implant 31 . have. In the contact step S2 according to the present invention, the contact portion 133 may be replaced depending on whether the conductor post 335 is provided in the first package 33 of the received implant package 30 . Accordingly, the contacting step ( S2 ) may include a step (not shown) of replacing the contact part 133 before the contact part comes into contact.
상기 기압하강단계(S3)는 플라즈마 방전장비(10)의 챔버에 연결된 공기인출부(15)를 통해 챔버(12)으로부터 공기를 빼내는 과정으로, 챔버(12)이 진공과 가까운 기압을 가지도록 공기를 제거하여 플라즈마의 발생이 용이하도록 한다. 본 발명의 바람직한 일 실시예에서는 공기인출부(15)를 통해 챔버(12)이 3torr 내외의 기압을 갖도록 할 수 있다. The air pressure lowering step (S3) is a process of withdrawing air from the chamber 12 through the air outlet 15 connected to the chamber of the plasma discharge device 10, and the air pressure so that the chamber 12 has an atmospheric pressure close to vacuum. to facilitate the generation of plasma. In a preferred embodiment of the present invention, the chamber 12 may have an atmospheric pressure of about 3 torr through the air outlet 15 .
본 발명의 다른 일 실시예에서는, 도 12에 도시된 바와 같이 상기 컨택단계(S2)는 기압하강단계(S3) 이후에 수행될 수도 있다. 공기인출부(15)를 통해 챔버(12) 내의 기압을 하강시킨 후, 접촉부(133)가 임플란트(31)와 접촉하거나 도체 포스트(335)를 통해 연결되어 접촉부(133)와 임플란트(31) 사이에 전류가 통하도록 연결될 수 있다. In another embodiment of the present invention, as shown in Fig. 12, the contact step (S2) may be performed after the atmospheric pressure lowering step (S3). After the air pressure in the chamber 12 is lowered through the air outlet 15 , the contact portion 133 comes into contact with the implant 31 or is connected through a conductor post 335 between the contact portion 133 and the implant 31 . can be connected to conduct current.
상기 전류인가단계(S5)는 플라즈마 방전장비에 전류를 인가하여 플라즈마를 발생시키는 과정이다. 도체전극(131) 및 접촉부(133)에 전류를 인가함으로써 진공에 가까운 상태의 챔버(12) 내의 기체가 플라즈마로 이온화되도록 한다. 직류를 통한 DC 글로우 방전이나 교류전압 인가를 통한 AC 또는 RF 글로우 방전이 수행될 수 있으며, 본 발명의 바람직한 일 실시예에서는 상기 도체전극(131)과 접촉부(133)에 고압의 전류를 교류로 인가함으로써 진공에 가까운 상태의 챔버(12)에서 플라즈마가 방전될 수 있도록 한다. The current application step (S5) is a process of generating plasma by applying a current to the plasma discharge equipment. By applying a current to the conductor electrode 131 and the contact portion 133 , the gas in the chamber 12 in a state close to vacuum is ionized into plasma. DC glow discharge through DC or AC or RF glow discharge through application of AC voltage may be performed. In a preferred embodiment of the present invention, a high-voltage current is applied to the conductor electrode 131 and the contact portion 133 as AC. By doing so, the plasma can be discharged in the chamber 12 in a state close to vacuum.
상기 개질단계(S7)는 방전된 플라즈마가 임플란트(31)의 표면을 친수성으로 개질하는 과정이다. 본 발명의 바람직한 일 실시예에서, 챔버(12) 내의 산소가 이온화되어 오존을 포함한 플라즈마가 생성될 수 있다. 제1포장(33) 내의 임플란트(31)가 전극으로 기능함에 따라, 임플란트가 제1포장(33)에 의해 외부와 차단되어 있더라도 임플란트(31)와 도체전극(131) 사이에서 강한 전압이 걸림에 따라 제1포장(33) 내부의 기체가 이온화되어 플라즈마가 생성될 수 있다. 플라즈마는 제1포장(33)의 내부에서 티타늄 표면의 탄소를 제거함으로써 임플란트의 표면이 친수성으로 개질될 수 있다. 본 발명의 다른 일 실시예에서, 임플란트 포장체(30)의 제1포장(33)이 플라즈마가 통과할 수 있는 플라즈마 투과부(331) 및 플라즈마가 통과할 수 없는 플라즈마 차폐부(333)로 구성되는 경우, 도 13에서와 같이 챔버(12) 및/또는 제1포장(33) 내의 기체가 이온화되어 형성된 플라즈마는 도체전극(131)과 접촉부(133) 사이에서 전기장에 의해 유동하게 되는데, 이 과정에서 제1포장(33)의 플라즈마 투과부(331)는 플라즈마가 통과할 수 있기 때문에 플라즈마가 제1포장(33)의 내부로 진행할 수 있다. 나아가, 플라즈마 차폐부(333)는 플라즈마가 통과할 수 없는 재질로 형성됨으로써, 플라즈마 차폐부(333)와 충돌한 후 되돌아나오는 플라즈마에 의해 임플란트의 표면이 더욱 개질될 수 있다.The reforming step (S7) is a process in which the discharged plasma reforms the surface of the implant 31 to be hydrophilic. In a preferred embodiment of the present invention, oxygen in the chamber 12 may be ionized to generate a plasma including ozone. As the implant 31 in the first packaging 33 functions as an electrode, even if the implant is blocked from the outside by the first packaging 33, a strong voltage is applied between the implant 31 and the conductor electrode 131. Accordingly, the gas inside the first package 33 may be ionized to generate plasma. Plasma removes carbon on the titanium surface from the inside of the first package 33, so that the surface of the implant can be modified to be hydrophilic. In another embodiment of the present invention, the first packaging 33 of the implant package 30 is composed of a plasma transmitting portion 331 through which plasma can pass and a plasma shielding portion 333 through which plasma cannot pass. In this case, as shown in FIG. 13 , the plasma formed by ionizing the gas in the chamber 12 and/or the first packaging 33 flows between the conductor electrode 131 and the contact portion 133 by an electric field, in this process The plasma transmission portion 331 of the first package 33 can pass through the plasma so that the plasma can proceed to the inside of the first package 33 . Furthermore, since the plasma shield 333 is formed of a material through which plasma cannot pass, the surface of the implant may be further modified by the plasma returning after colliding with the plasma shield 333 .
이에 따라 임플란트 주변에서 성장하는 골 및 주변 조직이 더욱 빨리 임플란트와 유합될 수 있도록 함으로써 임플란트의 초기 안정성이 확보될 수 있다.Accordingly, the initial stability of the implant can be secured by allowing the bone and surrounding tissues growing around the implant to be more quickly merged with the implant.
이하에서는 실시예를 통하여 본 발명의 효과를 상세하게 설명한다. 그러나, 이들 실시예는 하나 이상의 구체예를 예시적으로 설명하기 위한 것으로 발명의 범위가 이들 실시예에 한정되는 것은 아니다.Hereinafter, the effects of the present invention will be described in detail through examples. However, these examples are for illustrative purposes of one or more embodiments, and the scope of the invention is not limited to these examples.
(실시예 1)(Example 1)
기계가공된 티타늄 표면을 가진 임플란트(31)를 제1포장(33) 내에 수용된 채로 플라즈마 방전장비(10) 내로 제공하고, 접촉부(133)를 임플란트(31)와 접촉시켜 전류가 통하도록 한 후 챔버(12)이 3torr의 압력을 가지도록 하고, 전류를 120초 동안 인가하여 임플란트의 표면을 개질하였다. 상기 플라즈마를 통한 임플란트 표면개질 방법(S)을 통해 표면처리한 임플란트와 표면처리하지 않은 임플란트의 탄소 함량과 임플란트 표면에서 물이 퍼지는 정도, 즉 임플란트 표면의 친수성을 비교하였다. 표면처리된 임플란트와 표면처리되지 않은 임플란트의 표면 탄소 함량은 하기의 표 1과 같으며, 임플란트 표면에서 물이 퍼지는 정도는 도 14에 나타난 바와 같다. 표 1 및 도 14에서 볼 수 있듯이 표면의 탄소 함량은 약 50% 정도가 감소하였고, 임플란트 표면과 접촉한 물은 넓게 퍼져 친수성이 향상되었다.The implant 31 having a machined titanium surface is provided into the plasma discharge device 10 while being accommodated in the first package 33, and the contact part 133 is brought into contact with the implant 31 so that an electric current flows through the chamber. (12) was allowed to have a pressure of 3 torr, and an electric current was applied for 120 seconds to modify the surface of the implant. The carbon content of the implant surface-treated through the implant surface modification method (S) through the plasma and the implant without surface treatment were compared with the degree of water spreading on the implant surface, that is, the hydrophilicity of the implant surface. The surface carbon content of the surface-treated implant and the non-surface-treated implant is shown in Table 1 below, and the degree of water spreading on the implant surface is as shown in FIG. 14 . As can be seen in Table 1 and FIG. 14, the carbon content of the surface was reduced by about 50%, and the water in contact with the implant surface spread widely and the hydrophilicity was improved.
XPS(Carbon Ratio)(%)XPS(Carbon Ratio)(%) Decreased Ratio(%)Decreased Ratio (%)
표면처리하지 않음No surface treatment 32.2832.28 --
120초동안 표면처리Surface treatment for 120 seconds 16.2816.28 50%50%
이상의 상세한 설명은 본 발명을 예시하는 것이다. 또한, 전술한 내용은 본 발명의 바람직한 실시 형태를 나타내어 설명하는 것이며, 본 발명은 다양한 다른 조합, 변경 및 환경에서 사용할 수 있다. 즉 본 명세서에 개시된 발명의 개념의 범위, 저술한 개시 내용과 균등한 범위 및/또는 당업계의 기술 또는 지식의 범위내에서 변경 또는 수정이 가능하다. 저술한 실시예는 본 발명의 기술적 사상을 구현하기 위한 최선의 상태를 설명하는 것이며, 본 발명의 구체적인 적용 분야 및 용도에서 요구되는 다양한 변경도 가능하다. 따라서 이상의 발명의 상세한 설명은 개시된 실시 상태로 본 발명을 제한하려는 의도가 아니다. 또한 첨부된 청구범위는 다른 실시 상태도 포함하는 것으로 해석되어야 한다.The above detailed description is illustrative of the present invention. In addition, the above description shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the written disclosure, and/or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in specific application fields and uses of the present invention are possible. Accordingly, the detailed description of the present invention is not intended to limit the present invention to the disclosed embodiments. Also, the appended claims should be construed as including other embodiments.

Claims (17)

  1. 내부에 챔버와 전류가 통하도록 구비되는 도체전극 및 접촉부를 가지며 상기 챔버 내에서 플라즈마를 방전시킬 수 있도록 구비되는 플라즈마 방전장비 내에 임플란트 포장체를 제공하는 임플란트제공단계,An implant providing step of providing an implant package in a plasma discharge device having a conductor electrode and a contact portion provided to allow current to pass through the chamber therein, and provided to discharge plasma in the chamber;
    상기 챔버에 연결된 공기인출부를 통해 챔버으로부터 공기를 빼내는 기압하강단계,A pressure lowering step of withdrawing air from the chamber through an air outlet connected to the chamber;
    상기 플라즈마 방전장비에 전류를 인가하여 플라즈마를 발생시키는 전류인가단계 및A current application step of generating plasma by applying a current to the plasma discharge equipment; and
    방전된 플라즈마가 임플란트의 표면을 친수성으로 개질하는 개질단계를 포함하고, A reforming step in which the discharged plasma modifies the surface of the implant to be hydrophilic,
    상기 임플란트 포장체는 적어도 하나의 임플란트와 상기 임플란트를 둘러싸는 제1포장을 포함하되, 상기 임플란트는 플라즈마 방전장비와 전류가 통하도록 연결되어 표면이 개질되는 것을 특징으로 하는 플라즈마를 통한 임플란트 표면개질 방법.The implant package includes at least one implant and a first package surrounding the implant, wherein the implant is connected to a plasma discharge device to allow current to pass through, and the surface of the implant is modified through plasma. .
  2. 제1항에 있어서, 상기 플라즈마를 통한 임플란트 표면개질 방법은 상기 전류인가단계 전에 상기 접촉부를 임플란트와 전류가 통하도록 연결시키는 컨택단계를 더 포함하고, According to claim 1, wherein the implant surface modification method through the plasma further comprises a contact step of connecting the contact portion so that the current passes through the implant before the step of applying the current,
    상기 전류인가단계는 상기 도체전극 및 접촉부에 전류를 인가하여 플라즈마를 발생시키는 것을 특징으로 하는 플라즈마를 통한 임플란트 표면개질 방법.The current applying step is an implant surface modification method through plasma, characterized in that the plasma is generated by applying a current to the conductor electrode and the contact portion.
  3. 제2항에 있어서, 상기 컨택단계는 제1포장 내의 임플란트와 접촉부를 전류가 통하도록 연결시키는 것을 특징으로 하는 플라즈마를 통한 임플란트 표면개질 방법.[Claim 3] The method of claim 2, wherein the contacting step connects the implant and the contact portion in the first package so that an electric current passes through them.
  4. 제3항에 있어서, 상기 컨택단계는 챔버의 일측에서 챔버 내측으로 연장형성되는 접촉부를 상기 제1포장의 외부에서 내부로 관통하여 상기 임플란트와 접촉시키는 것을 특징으로 하는 플라즈마를 통한 임플란트 표면개질 방법.[4] The method of claim 3, wherein in the contacting step, a contact portion extending from one side of the chamber to the inside of the chamber penetrates from the outside of the first package to the inside to contact the implant.
  5. 제3항에 있어서, 상기 컨택단계는 상기 접촉부를 일단이 제1포장 내의 임플란트와 접촉하고 타단은 상기 제1포장의 외부로 노출되도록 구비되는 도체 포스트의 타단과 접촉하도록 접근시키는 것을 특징으로 하는 플라즈마를 통한 임플란트 표면개질 방법.[4] The plasma according to claim 3, wherein in the contacting step, the contact part is brought into contact with the other end of the conductor post provided so that one end contacts the implant in the first package and the other end is exposed to the outside of the first package. Implant surface modification method through
  6. 제1항에 있어서, 상기 임플란트 제공단계는 상기 제1포장에 형성되는 플라즈마가 통과할 수 있는 플라즈마 투과부를 플라즈마 방전장비의 도체전극과 면하도록 제공하는 것을 특징으로 하는 플라즈마를 통한 임플란트 표면개질 방법.The method of claim 1 , wherein the implant providing step provides a plasma permeable portion through which the plasma formed in the first packaging can pass so as to face the conductor electrode of the plasma discharge device.
  7. 제1항에 있어서, 상기 임플란트 제공단계는 제1포장의 외부에서 제1포장을 둘러싸는 제2포장을 더 포함하는 임플란트 포장체를 플라즈마 방전장비 내로 제공하되, 상기 임플란트제공단계는 상기 임플란트 포장체에서 제2포장을 제거하는 단계, 제1포장과 내부의 임플란트를 플라즈마 방전장비 내로 제공하는 단계를 포함하는 것을 특징으로 하는 플라즈마를 통한 임플란트 표면개질 방법.According to claim 1, wherein the implant providing step provides an implant package further comprising a second package surrounding the first package from the outside of the first package into the plasma discharge device, the implant providing step is the implant package Removing the second packaging from the implant, the implant surface modification method through plasma, characterized in that it comprises the step of providing the first packaging and the implant inside the plasma discharge equipment.
  8. 제1항 내지 제7항 중 어느 한 항의 방법으로 표면이 친수성으로 개질된 임플란트. An implant whose surface is modified to be hydrophilic by the method of any one of claims 1 to 7.
  9. 내부에 수용되는 적어도 하나의 임플란트, 상기 임플란트를 둘러싸며 내부를 폐색하는 제1포장 및 상기 제1포장의 외부에서 제1포장을 둘러싸며 내부를 폐색하는 제2포장을 포함하는 임플란트 포장체.An implant package comprising at least one implant accommodated therein, a first packaging surrounding the implant and occluding the inside, and a second packaging surrounding the first packaging from the outside of the first packaging and occluding the inside.
  10. 제9항에 있어서, 상기 제1포장은 일단이 상기 제1포장 내의 임플란트와 접촉하고 타단은 상기 제1포장의 외부로 노출되도록 구비되는 도체 포스트를 포함하는 것을 특징으로 하는 임플란트 포장체.[10] The implant package according to claim 9, wherein the first package includes a conductor post having one end in contact with the implant in the first package and the other end exposed to the outside of the first package.
  11. 제10항에 있어서, 상기 제1포장은 상기 임플란트의 적어도 일부분을 둘러싸며 플라즈마가 통과할 수 있도록 구비되는 플라즈마 투과부, 상기 임플란트의 적어도 다른 일부분을 둘러싸며 플라즈마가 통과할 수 없도록 구비되는 플라즈마 차폐부를 포함하는 것을 특징으로 하는 임플란트 포장체.11. The method of claim 10, wherein the first package surrounds at least a portion of the implant, a plasma transmitting portion provided to allow plasma to pass through, and a plasma shielding portion provided to surround at least another portion of the implant so that plasma cannot pass through it. Implant package, characterized in that it comprises.
  12. 제11항에 있어서, 상기 플라즈마 투과부는 가요성의 멤브레인으로 형성되고, 상기 플라즈마 차폐부는 플라스틱으로 구성되는 것을 특징으로 하는 임플란트 포장체.The implant package according to claim 11, wherein the plasma transmitting part is formed of a flexible membrane, and the plasma shielding part is made of plastic.
  13. 제9항 내지 제12항 중 어느 한 항의 임플란트 포장체, The implant package of any one of claims 9 to 12,
    상기 임플란트 포장체를 내부에 형성되는 챔버 수용하며 상기 챔버에 플라즈마를 방전시켜 상기 임플란트 포장체 내의 임플란트의 표면을 개질하는 플라즈마 방전장비를 포함하는 포장된 임플란트 표면개질 시스템.A packaged implant surface modification system including a plasma discharge device for accommodating the implant package body and a chamber formed therein, and discharging plasma to the chamber to modify the surface of the implant in the implant package body.
  14. 제13항에 있어서, 상기 플라즈마 방전장비는 내부 일측면에서 챔버 내측을 면하도록 구비되는 도체전극, 챔버의 일측으로부터 챔버 내측으로 연장형성되는 접촉부 및 상기 내부공간과 연결되어 내부공간의 공기를 빼내도록 구비되는 공기인출부를 포함하고, [Claim 14] The method of claim 13, wherein the plasma discharge device is connected to a conductive electrode provided to face the inside of the chamber from one inner side, a contact portion extending from one side of the chamber to the inside of the chamber, and the inner space to extract air from the inner space. Including an air outlet provided,
    상기 도체전극과 접촉부에 전류가 인가되어 내부공간에서 플라즈마를 발생시키는 것을 특징으로 하는 포장된 임플란트 표면개질 시스템.A packaged implant surface modification system, characterized in that a current is applied to the conductor electrode and the contact portion to generate plasma in the inner space.
  15. 제14항에 있어서, 상기 접촉부는 제1포장을 외부에서 내부로 관통하여 상기 제1포장 내부의 임플란트와 접촉하여 상기 임플란트에 전류가 통하도록 하는 것을 특징으로 하는 포장된 임플란트 표면개질 시스템.15. The system of claim 14, wherein the contact part penetrates the first package from the outside to the inside and comes into contact with the implant inside the first package so that an electric current flows through the implant.
  16. 제14항에 있어서, 상기 접촉부는 제1포장에 형성된 도체 포스트와 접촉하여 상기 임플란트에 전류가 통하도록 하는 것을 특징으로 하는 포장된 임플란트 표면개질 시스템.15. The system of claim 14, wherein the contact portion is in contact with the conductor post formed in the first package to allow an electric current to pass through the implant.
  17. 제14항에 있어서, 상기 접촉부는 상기 플라즈마 방전장비의 내부에서 탈착가능하도록 구비되어 형상이 바뀔 수 있는 것을 특징으로 하는 포장된 임플란트 표면개질 시스템.[Claim 15] The system of claim 14, wherein the contact part is provided so as to be detachable from the inside of the plasma discharge device, so that its shape can be changed.
PCT/KR2022/003041 2021-03-08 2022-03-03 Packaged implant surface modification method using plasma, and packaged implant surface modification system WO2022191506A1 (en)

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