WO2022182006A1 - Procédé de gravure d'empilement multiple de films contenant du silicium et procédé de fabrication de dispositif semi-conducteur les comprenant - Google Patents

Procédé de gravure d'empilement multiple de films contenant du silicium et procédé de fabrication de dispositif semi-conducteur les comprenant Download PDF

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WO2022182006A1
WO2022182006A1 PCT/KR2022/001389 KR2022001389W WO2022182006A1 WO 2022182006 A1 WO2022182006 A1 WO 2022182006A1 KR 2022001389 W KR2022001389 W KR 2022001389W WO 2022182006 A1 WO2022182006 A1 WO 2022182006A1
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etching
silicon
containing film
gas
etching gas
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PCT/KR2022/001389
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English (en)
Korean (ko)
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곽정훈
권병향
조용준
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에스케이 머티리얼즈 주식회사
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Publication of WO2022182006A1 publication Critical patent/WO2022182006A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means

Definitions

  • the present invention relates to a method for etching a silicon-containing film and a method for manufacturing a semiconductor device including the same, and more particularly, to a method for performing high aspect ratio etching on a multi-layered body of silicon-containing films having different compositions; It relates to a method of manufacturing a semiconductor device including the etching method.
  • a series of processes such as deposition, exposure, and etching are performed. These processes are performed in a deposition apparatus (eg, a CVD apparatus), an exposure apparatus, an etching apparatus, and the like.
  • the double etching process is a process of forming an ultra-fine structure having a desired pattern by selectively removing the thin film formed on the substrate by the deposition process along the pattern formed by the exposure process.
  • a technique of vertically stacking the cells of the semiconductor memory is applied.
  • NAND flash memory 128 or more memory cells are stacked as a unit for storing data (such a NAND flash memory is also called a 3D NAND flash memory), and the number of stacking stages of the memory cells is a NAND flash. It is predicted that it will become larger as the memory becomes more highly integrated or high-capacity.
  • silicon-containing films in which silicon-containing films of different components (eg, silicon nitride (Si x N y ) and silicon oxide (SiO 2 )) are alternately stacked for stacking memory cells
  • silicon-containing films of different components eg, silicon nitride (Si x N y ) and silicon oxide (SiO 2 )
  • Si x N y silicon nitride
  • SiO 2 silicon oxide
  • the aspect ratio of holes to be formed in the silicon-containing multi-layer body increases.
  • silicon-containing films In order to form high-aspect-ratio holes in multiple stacks of silicon-containing films, silicon-containing films have a high etch selectivity with respect to an etch mask (eg, photoresist or hardmask), while the silicon-containing films of different components make up the multi-stack. It is required that the containing films have a similar etch rate (ie, similar etch selectivity for silicon containing films of different components to each other) and an overall high etch rate. In addition, a phenomenon in which a hole having a high aspect ratio is blocked by an etching by-product or a bowing phenomenon should not occur.
  • an etch mask eg, photoresist or hardmask
  • Patent Document 1 A fluorinated hydrocarbon-based (C x H y F z ) etching gas is known as an etching gas used to form high-aspect-ratio holes in a multi-layered body of a silicon-containing film (Patent Document 1, WO2014/104290).
  • Patent Document 1 discloses a method of etching a multilayer film made of a silicon oxide film and a silicon nitride film using an etching gas containing a chain saturated fluorinated hydrocarbon compound.
  • the multilayer film of the silicon nitride film and the silicon oxide film can be etched with a high selectivity with respect to the etching mask, but there is a difference in the etching rate between the silicon nitride film and the silicon oxide film constituting the multilayer film. It is difficult to form a hole having a high aspect ratio well, and there is a problem in that the overall etch rate is low and productivity is lowered.
  • Patent Document 1 International Publication WO2014/104290
  • the present invention is to solve the problems of the prior art, and in forming a hole or trench of a high aspect ratio in a multi-layered body of a silicon-containing layer, it is possible to etch the multi-layered body of the silicon-containing layer with a high selectivity with respect to the etch mask. Rather, an object of the present invention is to provide a method for etching a silicon nitride layer and a silicon oxide layer at a similar etch rate without lowering the overall etch rate, and a method of manufacturing a semiconductor device using the same.
  • the present invention also provides an etching method capable of etching a hole having a high aspect ratio in a multi-layered body of a silicon-containing film using an etching gas having a low global warming potential (GWP), and a semiconductor device manufacturing method including the same. do.
  • GWP global warming potential
  • the etching gas includes a first etching gas having fluorine (F), nitrogen (N) and oxygen (O) atoms but not having carbon (C) atoms, and at least carbon (C) and fluorine (F) atoms. It characterized in that it includes a second etching gas.
  • the present invention it is possible to form a high aspect ratio hole having a good vertical profile in a silicon-containing film multi-layer body. In addition, it is possible to reduce the impact on the global environment and waste gas treatment cost by the waste gas of the etching process.
  • FIGS. 1A and 1B are schematic diagrams of an etching apparatus for performing an etching method according to an embodiment of the present invention.
  • FIG. 2 is a flowchart of an etching method according to an embodiment of the present invention.
  • FIG. 3 is a flowchart of a method of manufacturing a semiconductor device according to an embodiment of the present invention.
  • FIG. 1A and 1B show an etching apparatus 1 for performing an etching method according to an embodiment of the present invention.
  • the etching apparatus 1 is a capacitively coupled plasma (CCP) apparatus capable of generating a direct plasma, and the plasma P is directly generated in the process chamber 10 of the etching apparatus 1 through plasma discharge.
  • CCP capacitively coupled plasma
  • the present invention is not limited to a capacitively coupled plasma apparatus, and other types of apparatus may be used as long as plasma can be generated in the process chamber 10 .
  • the etching apparatus 1 may be an inductively coupled plasma (ICP) apparatus, or a combination thereof.
  • the etching apparatus 1 includes a shower head 20 serving as an electrode and an RF power connected to the shower head 20, and the RF power is an RF generator 30 and an impedance matching network 40: I.M.N.).
  • the shower head 20 of the etching apparatus 1 is disposed above the inside of the process chamber 10 , and is used to supply an etching gas or other gas into the process chamber 10 .
  • the RF generator 30 generates RF power, and the impedance matching network 40 adjusts the impedance to stabilize the plasma.
  • the etching apparatus 1 includes a stage 50 holding the substrate S, which is a processing object, in the lower portion of the process chamber 10 .
  • the stage 50 of the etching apparatus 1 is grounded and functions as a ground electrode.
  • a heating wire 510 or a heater electrode may be disposed inside the stage 50 to control the temperature of the substrate S.
  • the stage 50 may include a fixing means (eg, an electrostatic chuck, etc.) capable of fixing the substrate S during the etching process.
  • radicals When the plasma P is generated, components such as radical ions, electrons, and ultraviolet rays are generated from the etching gas. At least one of these radicals, ions, electrons, and ultraviolet rays may be used for etching. Radicals are electrically neutral and ions are electrically polar. Accordingly, when the plasma P is used in the etching process, radicals anisotropically etch an etched object by chemical etching, and ions anisotropically etch an etched object by physical etching.
  • the etching apparatus 1 of FIG. 1a has a structure for connecting RF power to the shower head 20, but the etching apparatus 1 is not limited thereto.
  • an RF power supply or a DC bias power supply may be additionally connected to the stage 50 as shown in FIG. 1B .
  • the etching apparatus 1 of the present embodiment may have a complex form of an ICP apparatus.
  • a coil antenna may be disposed in the etching apparatus 1 , and RF power may be connected to the coil antenna.
  • the etching apparatus 1 of the present embodiment may have a form in which a remote plasma apparatus is combined.
  • FIG. 2 is a flowchart of an etching method according to an embodiment of the present invention.
  • the etching method of the present invention shown in FIG. 2 is an etching gas for etching high-aspect-ratio holes (openings) in a multi-layered body including a first silicon-containing film and a second silicon-containing film having a different composition therefrom, fluorine ( F), a first etching gas having nitrogen (N) and oxygen (O) atoms, but not containing carbon (C) atoms, and a second etching gas having at least carbon (C) and fluorine (F) atoms It is characterized by being used together.
  • the first etching gas preferably has fluorine (F), nitrogen (N), and oxygen (O) atoms, and is a gas capable of generating at least F radicals and NO radicals when activated by plasma.
  • the first etching gas is preferably a gas that does not contain carbon (C) atoms so as not to form a fluorocarbon-based (CF x ) corrosion-resistant polymer film during the etching process.
  • the first etching gas is, in particular, F 3 NO.
  • the first etching gas is activated by the plasma and functions as a source of F radicals.
  • the F radical is an active species that etches both the silicon nitride layer as the first silicon-containing layer and the silicon oxide layer as the second silicon oxide layer, and etches both the silicon nitride layer and the silicon oxide layer at a high etch rate.
  • the first etching gas is activated by the plasma and functions as a source of NO radicals.
  • the NO radical lowers the etch reaction energy of the silicon nitride layer by the F radical, and thus serves to relatively increase the etching rate of the silicon nitride layer by the F radical.
  • the etching rate of the silicon oxide film by the F radical is higher than the etching rate of the silicon nitride film, but the NO radical does not decrease the etching rate of the silicon oxide film by the F radical, while the etching rate of the silicon nitride film is relatively increased. , it is possible to reduce the difference in the etch rates of the silicon nitride film and the silicon oxide film by the F radical, thereby making the etch selectivity between them close to 1 (ie, the etch rates are similar).
  • the silicon nitride film as the first silicon-containing film and the silicon oxide film as the second silicon-containing film have a selectivity ratio (Si x N y /SiO While 2 ) is close to 1, both silicon-containing films can be etched at a high etch rate.
  • the configuration of the etching apparatus may be simplified and the controllability of the etching process may be improved.
  • F 3 NO, CF 4 , C 2 F 6 , etc. (ITH 100 years, the global warming potential of CF 4 based on CO 2 is about 9,200), which was used as an etching gas for a conventional silicon-containing film, has a global warming potential.
  • the waste gas after the etching process contains an undecomposed perfluoride material in a very high composition ratio, and since these perfluoride etching gases are stable materials and exist for a very long time in the atmosphere, the waste gas is treated below the emission limit to the atmosphere. It should be discharged into the middle, and this required a lot of treatment cost.
  • F 3 NO is easily decomposed in an acid or alkaline aqueous solution, and thus waste gas treatment cost can be greatly reduced.
  • the second etch gas is activated by plasma to etch a high aspect ratio hole in a multiple stack of silicon nitride and silicon oxide, which can form a fluorocarbon-based (CF x ) polymer on the sidewalls of the holes.
  • a system gas (C x H y F z ) is preferred.
  • the fluorocarbon-based polymer formed on the sidewall of the hole and the hardmask (eg, an amorphous carbon-based hardmask) by such a fluorinated hydrocarbon-based gas functions as a kind of protective layer, so that the sidewall by ions in localized regions of the hole sidewall It is possible to prevent etching or bowing and prevent damage to the hardmask to keep the width of the hole constant throughout the depth direction of the hole (that is, to make the vertical profile of the hole good), and to prevent deformation after hole etching.
  • the fluorinated hydrocarbon-based (C x H y F z , x is 2 to 4, y is 0 to 4, z is 4 to 8) gas as the second etching gas has a C/F ratio (x/z; the number of carbon atoms and fluorine It is preferable that ratio of the number of atoms) is 0.5 or more. Accordingly, by relatively promoting the formation of the fluorocarbon-based polymer that occurs in competition with the etching reaction, it is possible to effectively reduce the shape deformation of the hole in the high aspect ratio etching.
  • x is preferably 2 to 4 or less.
  • the C/F ratio is preferably 4 or less.
  • x is 2-4, and the C/F ratio is 0.5-4. It is preferable to use a gas-based system, and it is more preferable to use a fluorinated hydrocarbon-based gas in which x is 2 to 4 and the C/F ratio of fragments (radicals) decomposed by plasma is 1.
  • hexafluoropropane C 3 H 2 F 6
  • hexafluorobutene C 4 H 2 F 6
  • octafluorobutane C 4 H 2 F 8
  • hexafluorobutane C 4 H 4 F 6
  • trifluoropropane C 3 H 5 F 3
  • tetrafluorobutane C 4 H 6 F 4
  • trifluorobutane C 4 H 7 F 3
  • difluoro Ropropane C 3 H 6 F 2
  • difluorobutane C 4 H 8 F 2
  • fluoropropane C 3 H 7 F
  • fluorobutane C 4 H 9 F
  • fluoromethylpropane chain-type fluorinated hydrocarbon-based gases such as (C 4 H 9 F) and the like
  • cyclic fluorinated carbon-based gases such as octafluorocyclopenten
  • a substrate on which a multi-layered body including a first silicon-containing layer and a second silicon-containing layer having a different composition is etched through a gate valve (not shown). It is brought into the process chamber 10 of the apparatus 1 and placed on the stage 50 in the etching apparatus 1 ( S01 ).
  • the first silicon-containing layer formed on the substrate S includes a silicon nitride layer (Si x N y ), and the second silicon-containing layer includes a silicon oxide layer (SiO 2 ).
  • the etching method of the present invention is not limited thereto, and may include other silicon-containing films (eg, an amorphous silicon film, a polysilicon film, a silicide film, etc.).
  • F 3 NO as a first etching gas and a fluorinated hydrocarbon-based gas as a second etching gas are separately supplied into the process chamber 10 at a predetermined flow rate through the shower head 20 ( S02 ). It is preferable that the flow ratio of the first etching gas and the second etching gas is 3-5:0.5-2.
  • F 3 NO was supplied at a flow rate of 40 sccm
  • 1,1,1-trifluoropropane (C 3 H 5 F 3 ) as a fluorinated hydrocarbon gas was supplied at a flow rate of 10 sccm. That is, the supply flow ratio of the first etching gas and the second etching gas was 4:1.
  • tetrafluorobutane (C 4 H 6 F 4 ) having a larger carbon content (x) is used as the fluorinated hydrocarbon-based gas
  • the present invention is not limited to this flow rate ratio, and depending on which gas is used as the second etching gas, another optimized flow rate ratio may be selected in consideration of the effect on the etching rate and the vertical profile of the hole.
  • a gas containing hydrogen (H) may be supplied together to control the concentration of F radicals.
  • the gas containing hydrogen (H) may include, but is not limited to, H 2 , HBr, and the like.
  • an inert gas such as argon may be supplied together with the etching gas.
  • Argon is most preferable as the inert gas, but it is not limited thereto, and other inert gases may be used.
  • the etching performance of the etching gas may be controlled through the use of such an inert gas. That is, when argon gas is used together, ion collisions increase and the etching rate and anisotropy by physical etching are improved, and the Ar + ion beam breaks bonds between silicon atoms in the silicon-containing film, thereby reducing the reaction of the etching gas with active species. Since the activation energy is lowered, the chemical etching rate by the active species may also be improved.
  • etching compounds are gaseous at room temperature and atmospheric pressure.
  • the non-gas phase ie liquid
  • its gaseous form can be formed either by vaporizing the compound through conventional vaporization steps such as direct vaporization or by bubbling with an inert gas (N 2 , Ar, He).
  • the non-gas phase etching compound may be supplied in a liquid state, where it is vaporized prior to introduction into the reactor.
  • direct plasma is generated in the process chamber 10 ( S03 ).
  • F 3 NO and a fluorinated hydrocarbon-based gas are used together as an etching gas, radicals such as F, F 2 , FNO, NO, CF x are generated in the direct plasma generated in the process chamber 10 . is created
  • the etching gas is activated by direct plasma, but the present invention is not limited thereto, and activation by remote plasma may be used selectively or in combination.
  • Radicals in the direct plasma generated in the process chamber 10 react with the first silicon-containing film and the second silicon-containing film on the substrate S mounted on the stage 50 to form a multi-layered structure of the silicon-containing film to be etched as an etch mask. is selectively etched (S04).
  • the etching mask include photoresist, an amorphous carbon film, and a spin-coated carbon film. According to the etching method of the present invention, the selectivity of the silicon-containing film to the etching mask can be increased to 4 or more.
  • the etching method of the embodiment of the present invention since the silicon nitride film as the first silicon-containing film and the silicon oxide film as the second silicon-containing film can be etched with a similar selectivity, the vertical profile of the high-aspect-ratio hole can be improved. That is, according to the etching method according to an embodiment of the present invention, a hole having a high aspect ratio of 20:1 or more can be formed with a good vertical profile.
  • a method of manufacturing a semiconductor device includes the step (S11) of alternately stacking and forming a silicon nitride film as a first silicon oxide film and a silicon oxide film as a second silicon oxide film on a substrate.
  • the number of stacking stages of the silicon nitride film and the silicon oxide film is two or more, respectively, preferably 64 or more layers, and more preferably 128 or more layers, respectively.
  • the present invention is not limited to the number of stacking stages of the silicon nitride film and the silicon oxide film.
  • the silicon nitride film and the silicon oxide film are preferably formed by a CVD method or an ALD method, but are not limited thereto.
  • an etching mask is formed on the multi-layered body of the silicon nitride layer and the silicon oxide layer (S12).
  • the etch mask may be a photoresist or a hard mask, and is formed to a thickness sufficient to function as a mask.
  • the hard mask may include an amorphous carbon film or a spin coating type carbon film.
  • the multi-layered silicon-containing layer is selectively etched with respect to the etch mask to form high-aspect-ratio holes (S13).
  • the present invention it is possible to form high-aspect-ratio holes having a good vertical profile in the silicon-containing film multi-layer body. In addition, it is possible to reduce the impact on the global environment and waste gas treatment cost by the waste gas of the etching process.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Un procédé de gravure d'un empilement multiple de films contenant du silicium selon la présente invention consiste : à introduire, dans une chambre de traitement d'un appareil de gravure, un substrat comportant un empilement multiple comprenant un premier film contenant du silicium et un second film contenant du silicium présentant une composition différente du premier film contenant du silicium; à fournir un gaz de gravure à la chambre de traitement; et à activer le gaz de gravure par plasma afin de graver l'empilement multiple afin de former ainsi des ouvertures présentant un rapport de forme élevé d'au moins 20:1, le gaz de gravure comprenant un premier gaz de gravure contenant des atomes de fluor (F), d'azote (N) et d'oxygène (O) et ne contenant pas d'atome de carbone (C), et un second gaz de gravure contenant au moins des atomes de carbone (C) et de fluor (F).
PCT/KR2022/001389 2021-02-26 2022-01-26 Procédé de gravure d'empilement multiple de films contenant du silicium et procédé de fabrication de dispositif semi-conducteur les comprenant WO2022182006A1 (fr)

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KR1020210026656A KR20220122260A (ko) 2021-02-26 2021-02-26 실리콘 함유막의 다중 적층체의 식각 방법 및 이를 포함하는 반도체 디바이스의 제조방법

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