WO2022171743A1 - Dispositif à semi-conducteur et son procédé de fabrication - Google Patents

Dispositif à semi-conducteur et son procédé de fabrication Download PDF

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Publication number
WO2022171743A1
WO2022171743A1 PCT/EP2022/053252 EP2022053252W WO2022171743A1 WO 2022171743 A1 WO2022171743 A1 WO 2022171743A1 EP 2022053252 W EP2022053252 W EP 2022053252W WO 2022171743 A1 WO2022171743 A1 WO 2022171743A1
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WIPO (PCT)
Prior art keywords
workpiece
elastomer layer
auxiliary carrier
semiconductor
carrier
Prior art date
Application number
PCT/EP2022/053252
Other languages
German (de)
English (en)
Inventor
Thomas Schwarz
Original Assignee
Ams-Osram International Gmbh
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Publication date
Application filed by Ams-Osram International Gmbh filed Critical Ams-Osram International Gmbh
Publication of WO2022171743A1 publication Critical patent/WO2022171743A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
    • H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device, a semiconductor carrier system, and a semiconductor device.
  • Particularly thin substrates are required for the manufacture of particularly flat semiconductor devices.
  • Thin substrates for example a leadframe with a thickness of approximately 100 pm, with relatively thick semiconductor components applied thereto, for example a photodiode with a thickness of approximately 220 pm, tend to sag because of the different thermal expansion coefficients of the semiconductor components. Therefore, they are difficult to handle in manufacturing without damaging the semiconductor devices.
  • the carrier system includes a backing plate and a thermosensitive adhesive material applied to an upper surface of the backing plate. At a predetermined, defined temperature, the thermosensitive adhesive loses its adhesive effect and can be removed from the carrier plate.
  • US 2011024906 A1 Another example of a carrier system is shown in US 2011024906 A1.
  • the carrier system contains an adhesive film that is laminated onto a rigid carrier layer.
  • the adhesive film may be double-sided adhesive and may be removable from the backing or from any other layer or material to which it is applied.
  • Brewer Science also suggests various types of carrier systems (see www.brewerscience.com) and methods to detach the semiconductor devices from the carrier system. These methods include laser releases, chemical release, thermal release and mechanical release methods. What these methods have in common, however, is that the substrate is exposed to increased mechanical, thermal and/or chemical stress when it is detached from the carrier system. This can lead to damage and yield loss of the semiconductor devices. Furthermore, the already known methods for detaching the substrate from the carrier system are usually expensive.
  • the object of the present invention is accordingly to provide a method for producing a semiconductor device, a semiconductor carrier system and a semiconductor device. direction that addresses at least some of the problematic aspects mentioned above.
  • the object is achieved by a method for manufacturing a semiconductor device having the features of independent claim 1, a semiconductor carrier system having the features of independent claim 19, and a semiconductor device having the features of independent claim 30. Execution forms and developments of the invention are described in the dependent gigantic claims.
  • a method for producing a semiconductor device comprises the steps of providing an auxiliary carrier, arranging or applying an elastomer layer on the auxiliary carrier, and arranging at least one workpiece, in particular a leadframe, on a side of the elastomer layer opposite the auxiliary carrier.
  • the method also includes the steps of arranging at least one semiconductor component on a side of the workpiece opposite the auxiliary carrier, encapsulating the at least one semiconductor component with an encapsulation material in such a way that the at least one semiconductor component is surrounded by the encapsulation material in the lateral direction, and separating the at least one workpiece with the semiconductor component arranged thereon from the auxiliary carrier, in that the elastomer layer is subjected to a tensile force in the lateral direction in at least a first area, in particular an edge area of the elastomer layer.
  • the actuation in at least a first area is to be understood as meaning that the tensile force is applied in this area, or a tensile force is exerted on this area.
  • only one wafer can also be processed with the aid of aspects of the proposed principle.
  • a method for producing a semiconductor device comprises the following steps: providing an auxiliary carrier; arranging or applying an elastomer layer on the auxiliary carrier; arranging at least one workpiece, in particular one or more metallic, insulating and/or semiconductor layers, on a side of the elastomer layer opposite the auxiliary carrier; Processing, in particular structuring, of the workpiece; and separating the at least one processed workpiece from the auxiliary carrier by subjecting the elastomer layer to a tensile force in the lateral direction in at least a first area, in particular an edge area of the elastomer layer.
  • the advantage of using an elastomer layer between the auxiliary carrier and the workpiece is that the workpiece is placed on a rigid carrier system during processing, so that the workpiece does not bend or only slightly bends during processing, and on the other hand separating the at least one processed workpiece from the auxiliary carrier without the auxiliary carrier or the workpiece being exposed to increased mechanical, thermal and/or chemical stress.
  • the auxiliary carrier and/or the workpiece is not bent in order to detach the workpiece from the auxiliary carrier, in particular after it has been processed.
  • the applied tensile force can not only cause the elastomer layer to stretch in the tensile direction, but also simultaneously reduce the thickness of the elastomer layer so that it separates from the two in the area between the auxiliary carrier and the workpiece.
  • the auxiliary carrier and the at least one workpiece are supported by the elastomeric layer Laminated exposure to pressure and temperature.
  • the workpiece is laminated onto the auxiliary carrier with the aid of the elastomer layer, so that the workpiece is fixed on the auxiliary carrier for further processing.
  • the elastomer layer has adhesive properties, so that the workpiece is fixed on the elastomer layer or the auxiliary carrier for further processing.
  • the elastomer layer connecting the auxiliary carrier and the workpiece By applying or exerting a tensile force on the elastomer layer connecting the auxiliary carrier and the workpiece, this is stretched in the tensile direction and it detaches itself from the auxiliary carrier and the workpiece due to the shearing that occurs. As a result, the elastomer layer is delaminated from the auxiliary carrier and the workpiece without the auxiliary carrier or the workpiece being subjected to increased mechanical, thermal and/or chemical stress. In particular, the auxiliary carrier and/or the workpiece is not bent in order to detach the workpiece from the auxiliary carrier, in particular after it has been further processed.
  • the applied tensile force can not only cause the elastomer layer to stretch in the tensile direction, but also simultaneously reduce the thickness of the elastomer layer so that it detaches from the two in the area between the auxiliary carrier and the workpiece.
  • the wording "lateral direction” can be understood in particular as a direction which is perpendicular to the direction of construction of the auxiliary carrier, the elastomer layer, the at least one workpiece and the at least one semiconductor component.
  • the wording "lateral direction” can be understood as a direction that points in the lateral direction to the direction of construction of the auxiliary carrier, the elastomer layer, the at least one workpiece, and the at least one semiconductor component.
  • the workpiece can be formed, for example, by a leadframe, a ceramic substrate, a printed circuit board, or a wafer.
  • the workpiece can be designed in comparison to the elastomer layer such that at least one semiconductor component can be arranged on the workpiece and this can be mechanically connected to the workpiece.
  • the workpiece can, for example, comprise a comparatively hard or stiff material in comparison to the elastomer layer.
  • the at least one semiconductor component can be, for example, an LED chip (light emitting diode), a photodiode, a photodetector, an integrated circuit (IC), a sensor, or a MEMS chip (microelectromechanical system). ) include.
  • the at least one semiconductor component can be formed by an optoelectronic semiconductor component such as an LED or a laser diode.
  • the at least one semiconductor component can be designed, for example, in such a way that it has a top-side contact and a bottom-side contact opposite the top-side contact for making electrical contact with the semiconductor component. The semiconductor component can then be electrically connected to the workpiece via the underside contact, for example, and to the workpiece via a wire via the top side contact.
  • the potting material can include, for example, an epoxy resin, acrylate, silicone, a thermoplastic material, or a duroplastic material.
  • the potting material can also include a matrix material that is mixed with an additive, in particular a filler, in order to adapt the mechanical, electrical or processing properties of the potting material.
  • the potting material can also be present without a filler and thus be "unfilled”. Potting material can have transparent properties, or be at least partially transparent to at least light in the visible range.
  • the potting material on the other hand, can also be essentially opaque or opaque at least for light in the visible range.
  • the step of encapsulating the at least one semiconductor device may include separating the workpiece into at least two segments.
  • the workpiece can be arranged and fixed on a side of the elastomer layer opposite the auxiliary carrier, at least one semiconductor component, in particular at least two semiconductor components, can be arranged on the workpiece, the at least one semiconductor component, in particular the at least two semiconductor components, can be cast with a casting material , and the workpiece can then be divided into at least two segments, in particular in such a way that each segment comprises a semiconductor component.
  • the workpiece can also be divided into five, ten, a hundred, or another number of segments.
  • the separation can be done, for example, by means of laser cutting, sawing, or wet-chemical etching, and the elastomer layer in particular cannot be damaged by the separation.
  • the step of arranging the at least one workpiece on a side of the elastomeric layer opposite the auxiliary carrier comprises separating the workpiece into at least two segments.
  • the workpiece can be arranged and fixed on a side of the elastomer layer opposite the auxiliary carrier and the workpiece can then be divided into at least two segments.
  • the workpiece can also be divided into five, ten, hundred, or any other number of segments.
  • the separation can be done, for example, by means of laser cutting, sawing, or wet-chemical etching, and it can in particular only the workpiece can be separated into segments without damaging the underlying elastomer layer.
  • Separating the workpiece into at least two segments can prevent the workpiece from bending at all or only slightly in the event of subsequent encapsulation of the at least one semiconductor component, thereby improving the quality of the semiconductor device.
  • the step of arranging the at least one workpiece on a side of the elastomer layer opposite the auxiliary carrier comprises potting the workpiece with a further potting material.
  • the workpiece can be arranged and fixed on a side of the elastomer layer opposite the auxiliary carrier, the workpiece can be divided into at least two segments, and then the workpiece, in particular the at least two segments, can be cast with a further casting material.
  • the encapsulation takes place in such a way that the workpiece, in particular the at least two segments, are enclosed by the additional encapsulation material in the lateral direction.
  • the workpiece or each of the segments can, for example, be completely surrounded by the further casting material, viewed in a circumferential direction around the workpiece or in a circumferential direction around each of the segments.
  • the circumferential direction can result, for example, around an axis through the center of gravity of the workpiece or around a respective axis through the center of gravity of each segment, which in the direction of the construction direction of the auxiliary carrier, the elastomer layer, the at least one workpiece, and the at least a semiconductor component is formed.
  • the further potting material can include, for example, an epoxy resin, acrylate, silicone, a thermoplastic material, or a duroplastic material.
  • the further casting material can also comprise a matrix material that is mixed with an additive, in particular a filler, to adjust the mechanical, electrical or processing properties of the further potting material.
  • the further encapsulation material can also be present without a filler and thus be "unfilled”.
  • the further encapsulation material preferably has transparent properties, or is at least partially transparent to at least light in the visible range.
  • the further encapsulation material has transparent properties if it the semiconductor device is a semiconductor device with optoelectronic semiconductor components
  • the further potting material can, however, also be essentially opaque or be opaque to at least light in the visible range.
  • the further casting material is essentially flush with a surface of the at least one workpiece that is opposite the auxiliary carrier.
  • the further encapsulation material can, for example, form an encapsulation in which the workpiece or the at least two segments are embedded, resulting in a plate made up of individual encapsulated workpiece segments or leadframe segments, on which at least one semiconductor component can be arranged in each case.
  • the step of arranging at least one semiconductor component on the workpiece includes electrically connecting, in particular bonding, the at least one semiconductor component to the workpiece.
  • the workpiece or each of the at least two segments of the workpiece can be designed in such a way that they each have a first and a second electrical contact that is electrically insulated from the first.
  • At least one semiconductor component per segment can be applied to one of the two electrical contacts and electrically connected to it, and the semiconductor component can be connected to the other via a wire bond. ren not yet contacted electrical contact be electrically connected.
  • At least two semiconductor components are arranged on a side of the at least one workpiece opposite the auxiliary carrier.
  • at least one semiconductor component can be arranged on each of the at least two segments of the workpiece.
  • the method according to the invention comprises a further step of separating the at least one workpiece with the at least two semiconductor components arranged thereon into at least two semiconductor devices, such that each semiconductor device comprises one of the at least two semiconductor components and a segment of the at least one workpiece.
  • the step of separating takes place after the separation of the at least one workpiece with the semiconductor component arranged thereon from the auxiliary carrier.
  • the separation step can be achieved, for example, by means of laser cutting, sawing, or wet-chemical etching.
  • a force opposing the tensile force is exerted on at least one of the submount and the potted workpiece during the step of separating the at least one workpiece with the semiconductor device disposed thereon from the submount.
  • This force can be applied, for example, by holding or fixing one of the auxiliary carrier and the cast workpiece during the step of separating the at least one workpiece from the auxiliary carrier and thus exerting a force counter to the tensile force.
  • the force exerted against the tensile force prevents the carrier system consisting of auxiliary carrier, elastomer layer, workpiece, semiconductor component and potting material from being displaced in the direction of the tensile force and This means that the tensile force cannot cause any stretching in the elastomer layer.
  • a first tensile force is exerted on the elastomer layer in a first area, in particular in a first edge area of the elastomer layer, in the lateral direction and in a second area opposite the first area, in particular in a second edge area opposite edge region, a second, to the first tensile force exerted substantially opposite tensile force.
  • the wording "acting essentially in opposite directions" can be understood in particular to mean that the force vectors of the first and second tensile forces essentially cancel each other out.
  • a tensile force is exerted on the elastomer layer in a large number of areas, in particular edge areas of the elastomer layer, with the force vectors of the tensile forces essentially canceling each other out in total.
  • the elastomer layer can be subjected to a tensile force in at least two or four oppositely acting directions in a respective region, in particular edge regions of the elastomer layer, with the force vectors of the tensile forces essentially canceling each other out in total .
  • the elastomer layer is stretched in different directions by the tensile forces, so that its thickness changes and causes it to detach from the workpiece.
  • the elastomer layer protrudes laterally beyond the auxiliary carrier and/or the workpiece in the at least one first area.
  • the elastomer layer protrudes at least in the areas in which a tensile force is applied is, laterally over the auxiliary carrier and / or the workpiece out.
  • the elastomer layer can be better accessible in the areas in which a tensile force is exerted and in which it protrudes beyond the auxiliary carrier and/or the workpiece, for example in order to apply the tensile force, i.e. for example the elastomer layer to grab.
  • the elastomer layer comprises a multiplicity of segments arranged next to one another, in particular strips.
  • the elastomer layer can be applied to the auxiliary carrier in the form of a single continuous layer, and this can then be cut into strips on the auxiliary carrier, for example with a knife or a laser.
  • the segments or strips of the elastomer layer can also be applied individually to the auxiliary carrier and arranged next to one another.
  • the elastomeric layer comprises at least one of PDMS, silicone, rubber, fluoroelastomer, Viton, and polyurethane.
  • the elastomer layer has a thickness of 0.1 mm to 10 mm or a thickness between 2 mm and 5 mm. For example, however, thicker layers can also be preferred in order to avoid cracks in the elastomer layer when the tensile force is applied to the elastomer layer.
  • the elastomeric layer has a modulus of elasticity of less than 50 MPa, or less than 5 MPa. Such a modulus of elasticity can be advantageous because it describes a desired relationship between mechanical stress and strain in the Hookean range.
  • the elastomer layer additionally has a Elongation at break greater than or equal to 50%, or greater than or equal to 100%.
  • the submount comprises at least one of steel, copper, silicon, glass, ceramic, an iron-nickel alloy (FeNi), or a flame retardant and flame retardant composite such as FR4.
  • the auxiliary carrier can consist of a hard or stiff material that provides appropriate stability and evenness for machining the workpiece.
  • the auxiliary carrier and/or the elastomer layer and/or the workpiece have a rectangular, square or round shape when viewed in the lateral direction.
  • the auxiliary carrier and/or the elastomer layer and/or the workpiece have a substantially identical shape when viewed in the lateral direction, with the elastomer layer having a larger area in particular than the auxiliary carrier and the workpiece when viewed in the lateral direction.
  • the auxiliary carrier and/or the elastomer layer and/or the workpiece, in particular in the form of a semiconductor wafer can have an essentially round shape.
  • the auxiliary carrier has openings into which the elastomer layer protrudes laterally.
  • the openings are arranged in a region of the auxiliary carrier in which there is no region of the workpiece, viewed in the direction of assembly of the auxiliary carrier, the elastomer layer, the at least one workpiece and the at least one semiconductor component.
  • the workpiece comprises a carrier film and a lead frame applied to the carrier film.
  • a semiconductor carrier system according to the invention comprises an auxiliary carrier, on which an elastomer layer is arranged, and at least one workpiece, in particular a leadframe, on the upper side of which at least one semiconductor component is arranged.
  • the workpiece is arranged on a side of the elastomer layer opposite the auxiliary carrier.
  • the semiconductor carrier system includes a potting material that encloses the semiconductor component in the lateral direction.
  • the semiconductor carrier system can, for example, be an intermediate product in the manufacturing process of a semiconductor device according to the invention.
  • the at least one workpiece comprises at least two segments that are separate from one another, in particular two leadframe segments that are separate from one another.
  • Leadframe segment can in turn have a first electrical contact and a second electrical contact which is electrically insulated from and spaced from the first electrical contact.
  • the at least two segments each have a ridge along a parting line running between the two segments.
  • the burr can have arisen, for example, by separating the workpiece into the at least two segments by means of laser cutting, sawing, or wet-chemical etching.
  • the semiconductor carrier system has a further potting material that encloses the at least one workpiece, in particular the at least two segments, in the lateral direction.
  • the burr can be deformed, in particular as a result of contact with the casting tool used.
  • the further casting material is essentially flush with a surface of the at least one workpiece that is opposite the auxiliary carrier.
  • the elastomer layer protrudes in at least a first area, in particular the edge area
  • Elastomer layer laterally beyond the subcarrier and/or the workpiece.
  • the elastomer layer has a greater thickness in at least the first area than in an area between the auxiliary carrier and the workpiece.
  • the elastomer layer can have a thicker, in particular peripheral edge in at least the first area, in particular the edge area of the elastomer layer, so that the elastomer layer can be more easily accessible in this area, for example to grip the elastomer layer.
  • the elastomeric layer comprises a multiplicity of segments arranged next to one another, in particular strips.
  • the segments can also be arranged on the auxiliary carrier in the form of an A ⁇ 2 matrix, where A can correspond to a natural number greater than or equal to 1.
  • the segments can be arranged on the subcarrier spaced apart from each other by a gap, for example. However, the gap can be very small in the range of a few ⁇ m.
  • Segmentation of the elastomer layer can be advantageous, since on the one hand a lower tensile force may be required to separate the at least one workpiece with the semiconductor component arranged on it from the auxiliary carrier, and on the other hand there is a lower risk of cracks forming in the elastomer layer when the at least one workpiece with the semiconductor component arranged thereon is separated from the auxiliary carrier, and larger workpieces can be separated from the auxiliary carrier by separating using individual segments.
  • At least one edge area of the plurality of segments of the elastomeric layer arranged next to one another protrudes beyond the auxiliary carrier and/or the workpiece, so that the elastomeric layer can be better accessible in these areas in order to grip the elastomeric layer, for example.
  • the submount has openings and the elastomeric layer projects laterally into these openings.
  • the openings are arranged in a region of the auxiliary carrier in which no region of the workpiece lies, viewed in the direction in which the layers of the semiconductor carrier system are built up.
  • the elastomer layer can be better accessible due to the openings in these areas, for example to grip the elastomer layer.
  • the openings can be advantageous since this creates good accessibility of the elastomer layer and at the same time the semiconductor carrier system can be processed better since no areas of the elastomer layer protrude laterally beyond the auxiliary carrier and could possibly interfere with the processing.
  • At least two workpieces are arranged next to one another on a side of the elastomer layer opposite the auxiliary carrier. not. This can be particularly advantageous if smaller workpieces are required for better handling or machining in preceding and/or subsequent processes.
  • a semiconductor device comprises a lead frame, on the upper side of which a semiconductor component is arranged, a potting material that encloses the semiconductor component in the lateral direction, and a further potting material that encloses the lead frame in the lateral direction and essentially ends flush with the top side of the lead frame . Since Liche outer surfaces of the semiconductor device are formed only by the two potting materials.
  • Lateral outer surfaces of the semiconductor device can be understood in particular as surfaces of the semiconductor device that delimit the semiconductor device in a circumferential direction about an axis along the direction in which the layers of the semiconductor device are built up.
  • the lateral outer surfaces of the semiconductor device are only formed by the two encapsulation materials results, for example, from the fact that when separating a plurality of interconnected semiconductor devices, a separating process takes place in areas in which only the two encapsulation materials are formed. Accordingly, the lateral outer surfaces result in such a way that they are only formed by the two casting materials. In particular, this has the advantage that during the separating process, separation occurs only through the two casting materials and, for example, no further material, and the separation process is facilitated as a result.
  • 1A to 1E show steps of the basic idea of a method for manufacturing a semiconductor device according to the proposed principle
  • 4A to 4J each show a top view and a sectional view of different embodiment examples of a semiconductor carrier system according to the proposed principle
  • 5A to 5C each show a plan view of various further exemplary embodiments of a semicon terivasystems according to the proposed principle.
  • FIG. 1A to 1E show the basic idea of a method according to the proposed principle for manufacturing a semiconductor device.
  • a stack of an auxiliary carrier 2, an elastomeric layer 3 and a workpiece 4 is provided in a first step.
  • This stack is laminated according to the arrows shown in FIG. 1B under the action of pressure and temperature, so that the individual layers are fixed to one another.
  • the workpiece 4 is then machined, see Fig. IC.
  • This may include, but is not limited to, steps such as separating the workpiece into segments, potting the workpiece with a filler material, placing semiconductor devices on the workpiece, and potting the semiconductor devices on the workpiece.
  • the machined workpiece 4.1 is then, as shown in FIG this stretches due to the tensile force in the lateral direction.
  • the applied tensile force Z not only causes the elastomer layer 3 to stretch in the tensile direction, but also simultaneously reduces the thickness of the elastomer layer, so that it shears off the two in the area between the auxiliary carrier 2 and the machined workpiece 4.1 .
  • the processed workpiece 4.1 has been detached from the auxiliary carrier 2 and the elastomer layer 3, it can be further processed or reworked in subsequent steps (see FIG. IE). This may include, but is not limited to, steps such as dicing the workpiece into, for example, multiple semiconductor devices.
  • FIG. 2A to 2F show steps of a method according to the proposed principle for manufacturing a semiconductor device.
  • a workpiece 4 is provided, as shown in FIG. 2A.
  • the workpiece 4 is in the form of a leadframe 11 which, as a result of previous processing steps, has a plurality of first and second electrical contacts 11.1, 11.2 which are connected to one another via so-called support struts 11.3.
  • the plurality of first and second electrical contacts 11.1, 11.2 can have been produced, for example, by one or more previous etching steps.
  • the leadframe also has a coating 12, which protects the plurality of first and second electrical contacts 11.1, 11.2 from corrosion, for example.
  • FIG. 12 shows a further step, as shown in FIG.
  • the workpiece 4 or the leadframe 11 is laminated onto an auxiliary carrier 2 by means of an elastomer layer 3 .
  • This can be done, for example, with the help of pressure and temperature, as already shown in FIG. 1B.
  • the lamination step fixes the workpiece 4 or the leadframe 11 on the auxiliary carrier, so that the workpiece 4 or the leadframe 11 can be processed further in subsequent steps.
  • the auxiliary carrier consists in particular of a hard or stiff material in order to provide appropriate stability and flatness for further processing of the workpiece 4 or the leadframe 11 .
  • each of the segments comprises a first and a second electrical contact 11.1, 11.2, which are electrically insulated from one another and are arranged on the elastomer layer 3 at a distance from one another.
  • the leadframe 11 is separated into at least two segments, for example by means of laser cutting, sawing, or wet-chemical etching, and the elastomer layer 3 is in particular not damaged by the separation. As shown in the figure, the segments are separated in the area of the support struts 11.3 by severing them using one of the methods mentioned above.
  • the machined workpiece 4.1 or the machined leadframe 11 is shown in FIG. 2D.
  • the segments or the first and second electrical contacts 11.1, 11.2 along a separating line running between the segments have a burr 14 which is produced by the separating process.
  • FIG. 2E shows a semiconductor carrier system 10 that represents an intermediate product of the method according to the proposed principle for manufacturing a semiconductor device.
  • the processed leadframe 11 shown in FIG. 2D is encapsulated in a first step with an additional encapsulation material 7 in such a way that the at least two segments are surrounded by the additional encapsulation material 7 in the lateral direction.
  • the further potting material 7 terminates essentially flat with a surface of the leadframe 11 opposite the auxiliary carrier 2 .
  • This is achieved, for example, in that a tool is placed on the surface of the leadframe 11 opposite the auxiliary carrier 2, and areas between the segments of the leadframe or between the first and second electrical contacts 11.1, 11.2 are backfilled with the additional casting material. Placing the tool on the surface of the leadframe 11 opposite the auxiliary carrier 2 can result in the burr 14, as shown in the figure, being deformed or even broken off.
  • a semiconductor component 5 is arranged on each of the segments of the leadframe 11 .
  • a semiconductor component 5 is arranged on a surface of the first electrical contact 11.1 of the leadframe 11 that is opposite the auxiliary carrier 2.
  • the semiconductor component can be glued on or soldered, for example.
  • each of the semiconductor components 5 is electrically connected to the associated second electrical contact 11.2 via a wire 8 by means of a wire bonding process. Then the semiconductor components 5 are enclosed with a potting material 6 in the lateral direction.
  • a tool is placed on the leadframe 11 or the further encapsulation material 7 and the semiconductor components 5 are encased with the encapsulation material 6 .
  • the casting material 6 is arranged in such a way that the semiconductor components 5 are surrounded by the casting material 6 at least in the circumferential direction.
  • a layer of the encapsulation material is applied over the semiconductor components 5 and the wire 8 is also encapsulated in the encapsulation material 6 .
  • the auxiliary carrier 2 or the elastomer layer 3 is then detached from the semiconductor carrier system 10 by applying a tensile force in the lateral direction in an edge area of the elastomer layer 3 . Due to the tensile force, the elastomer layer 3 expands in the lateral direction and at the same time the thickness of the elastomer layer in the area between the auxiliary carrier 2 and the leadframe 11 tapers, so that it shears off the auxiliary carrier 2 and the leadframe 11 .
  • the auxiliary carrier can be held in place, for example, and a force counteracting the tensile force can thus be exerted on the semiconductor carrier system 10 .
  • This force can also be applied, for example, by holding or fixing the cast lead frame 11 during the step of separating the cast lead frame 11 from the auxiliary support 2 and thus exerting a force counter to the tensile force becomes.
  • the encapsulated leadframe 11 After the encapsulated leadframe 11 has been detached from the auxiliary carrier 2 and the elastomer layer 3, it can be further processed or post-processed in fol lowing steps. In the present case, shown in FIG. 2F, the encapsulated leadframe 11 with the semiconductor components 5 isolated, resulting in a plurality of semiconductor devices 1 each having a semiconductor component 5 .
  • the joining step can be carried out, for example, by means of laser cutting, sawing, or wet-chemical etching.
  • the lateral outer surfaces 9 of the semiconductor devices 1 can be understood in particular as the surfaces of the semiconductor devices 1 which each delimit the semiconductor devices 1 in the circumferential direction.
  • FIG. 3A and 3B show a top view and a sectional view of several semiconductor devices 1 produced by the method according to the invention.
  • Four semiconductor devices 1 arranged next to one another are shown as an example in FIG. 3A. However, this should not be understood to be restrictive, rather more or fewer than four semiconductor devices 1 arranged next to one another can likewise be produced by means of the method.
  • each semiconductor device 1 comprises a leadframe 11, in particular a leadframe segment, which has a first and a second electrical contact 11.1, 11.2.
  • a leadframe segment which has a first and a second electrical contact 11.1, 11.2.
  • the support struts 11.3 are formed, which point in the direction of the outer surfaces 9 of the semiconductor devices 1.
  • the support struts 11.3 can each have a burr 14 on their outer edge, which can arise, for example, by separating a leadframe plate into a plurality of leadframe segments.
  • a semiconductor component 5 is arranged on the upper side of each first electrical contact 11.1 and is electrically connected to the second electrical contact 11.2 via a wire.
  • Each leadframe segment or a first and a second electrical contact 11.1, 11.2 is made of a potting material
  • FIG. 3A also shows that the singulation process described in FIG. 2F has a plurality of semiconductor devices 1 with a smaller width when the semiconductor devices 1 are singulated than the step of separating the leadframe 11 into segments shown in FIG. 2C.
  • the singulation process described in FIG. 2F has a plurality of semiconductor devices 1 with a smaller width when the semiconductor devices 1 are singulated than the step of separating the leadframe 11 into segments shown in FIG. 2C.
  • more material of the leadframe is removed in terms of the width of the separating line than material of the potting materials is removed when the semiconductor devices 1 are separated. This in turn means that when the semiconductor devices 1 are separated, only the two encapsulation materials 6, 7 are severed, since the
  • FIG. 3B shows a sectional view through that in Fig. 3A.
  • the figure corresponds to the semiconductor devices 1 shown in FIG. 2F, which result as a product from the method described in FIGS. 2A to 2F.
  • 4A to 4J each show a plan view and a sectional view of different exemplary embodiments of a semiconductor carrier system 10.
  • Each of the semiconductor carrier systems 10 comprises an auxiliary carrier 2, an elastomer layer 3 applied to the auxiliary carrier 2 and at least one workpiece applied to the elastomer layer 3 4.
  • the workpiece 4 can, for example, comprise a leadframe and have been designed or processed in accordance with one of the preceding exemplary embodiments.
  • Fig. 4A shows an elastomer layer 3 which, viewed from above, has essentially the same base area as the auxiliary carrier 2. However, the elastomer layer 3 protrudes beyond the workpiece 4 along a side edge of the workpiece 4. As a result, an edge region of the elastomer layer 3 is not covered by the workpiece 4, so that in this area the tensile force Z represented by the arrow can be applied to the elastomer layer for separating the workpiece 4 from the auxiliary carrier 2.
  • the base area of the auxiliary carrier 2 can also be smaller than the base area of the elastomer layer 3, so that the edge area of the elastomer layer 3 is not covered by the auxiliary carrier 2 and the workpiece 4 both on its upper side and on its underside.
  • the tensile force Z can be applied to the elastomer layer 3 in a simplified manner.
  • the elastomer layer 3 of the semiconductor carrier system 10 shown in FIG. 4C protrudes not only along one side edge of the workpiece 4 beyond the workpiece 4 and the auxiliary carrier 2, but also along two opposite edges side edges of the workpiece 4. In these two overlapping existing areas, the elastomer layer 3 is not covered by the auxiliary carrier 2 and the workpiece 4 both on the upper side and on the underside.
  • the tensile force Z represented by the arrow is exerted on the elastomer layer in each of these two areas.
  • the two tensile forces represented by the arrows act in opposite directions so that their force vectors essentially cancel each other out. The result of this is that no further force has to be exerted on the auxiliary carrier and/or the workpiece in order to separate the workpiece 4 from the auxiliary carrier 2 .
  • FIG. 4D shows an elastomer layer 3 that protrudes beyond the workpiece 4 and the auxiliary carrier 2 along its entire circumference, i.e. in comparison to the elastomer layer 3 shown in FIG. 4C along all four side edges of the base area of the elastomer layer 3 .
  • the respective oppositely acting tensile forces Z represented by the arrow
  • the tensile forces on the respective opposite side edges, represented by the arrows act in opposite directions, so that their force vectors essentially cancel each other out. This means that no further force has to be exerted on the auxiliary carrier and/or the workpiece in order to separate the workpiece 4 from the auxiliary carrier 2 .
  • FIG. 4E shows a plurality of workpieces 4 which are arranged on the elastomer layer 3.
  • FIG. 4 In the present example, three workpieces 4a, 4b and 4C are arranged next to one another and at a distance from one another on the elastomer layer 3. Arranging a number of smaller workpieces in comparison to one larger workpiece can be advantageous in particular if smaller workpieces are required for preceding or subsequent processes, for example for better handling.
  • the elastomeric layer 3 can comprise a plurality of segments or strips 3a to n which are arranged next to one another.
  • the indices "a to n" indicates the number of strips that are arranged next to one another. In the present example, six strips arranged next to one another are shown as an example, but the number of strips can be freely selected and can be greater or less than six The strips protrude along their opposite short side edges beyond the workpiece 4 and the auxiliary carrier 2 and at the respectively opposite ones
  • the gap between the individual strips of the elastomer layer can be made wider as shown in FIG. 4G or as narrow as possible, as shown in FIG. 4J. In some embodiments it can be preferred, for example, that the gap between the individual strips of the elastomer layer is only a few ⁇ m wide. As a result, for example, a surface of the elastomer layer 3 that is as flat as possible can be provided and the strips can nevertheless be individually subjected to a tensile force Z in order to reduce the risk of the elastomer layer cracking.
  • 4H and 4I show a carrier system which comprises a plurality of workpieces 4, in the illustrated case four workpieces 4, which are arranged on the elastomer layer 3 in the form of an m ⁇ n matrix or in the illustrated case in the form of a 2 ⁇ 2 matrix are. Furthermore, the elastomer layer 3 comprises a plurality of segments which are also arranged on the auxiliary carrier in the form of an m ⁇ n matrix. In each case, three segments of the elastomer layer are arranged next to one another, for example, between the auxiliary carrier 2 and each workpiece 4 in such a way that an edge area of the segment protrudes beyond the associated workpiece for each segment.
  • the segments of the elastomer layer 3 of FIG. 4H also protrude beyond the auxiliary carrier 2 and the tensile force Z for separating the workpiece 4 from the auxiliary carrier 2 is exerted on the segments of the elastomer layer 3 in the respective projecting areas.
  • the tensile forces can in particular be applied to the segments of the elastomer layer 3 in such a way that the total force vectors of all tensile forces Z essentially cancel each other out.
  • openings 15 are formed in the auxiliary carrier of the semiconductor carrier system 10 shown in FIG the segments of the elastomer layer 3 protrude.
  • the openings 15 make it possible, for example, to grip the segments of the elastomeric layer with a tool and to apply the tensile force Z to the elastomeric layer to separate the workpiece 4 from the auxiliary carrier 2 .
  • FIG. 5A, 5B and 5C show a semiconductor carrier system 10 in which at least the workpiece 4 is designed in the form of a disc or in the form of a wafer.
  • the elastomeric layer 3 in FIG. 5A is also in the form of a disc which is arranged concentrically to the workpiece and protrudes along its entire circumference over the workpiece 4 and the auxiliary carrier 2 .
  • the elastomer layer 3 in FIG. 5B is in the form of cake segments which are arranged at a distance from one another on the auxiliary carrier.
  • four cake segments are shown as an example, which are arranged point-symmetrically to the center of the workpiece 4 around the center of the workpiece 4 on the auxiliary carrier.
  • the number of cake segments can also deviate and be greater or less than four.
  • 5C shows a semiconductor carrier system 10 comprising a rectangular auxiliary carrier 2 on which two disk-shaped or wafer-shaped workpieces 4a, 4b are arranged next to one another.
  • the elastomer layer 3 Arranged between the workpieces and the auxiliary carrier 2 is the elastomer layer 3, which is in the form of cake segments 3 ab is h.
  • Four segments each are arranged point-symmetrically to the center of the two workpieces 4 around the center of the corresponding workpiece 4 on the auxiliary carrier.
  • FIGS. 6A to 6F show the steps of a further exemplary embodiment of a method for manufacturing a semiconductor device according to the proposed principle.
  • the method largely corresponds to the method described in FIGS. 2A to 2F.
  • the workpiece 4 comprises a leadframe 11 which is laminated onto a carrier film 16 in a step shown in FIG. 6A.
  • the carrier film 16 for example, the adhesion of the leadframe 11 to the elastomer layer 3 can be improved, so that the risk is reduced that the segments of the leadframe are displaced during the step of separating the leadframe into segments shown in FIG. 6C.
  • the further processing steps of the semi- The ladder support system 10 essentially corresponds to that already described in FIGS. 2C to 2E.
  • the leadframe 11 including the carrier foil 16 and the semiconductor components 5 arranged and encapsulated thereon are detached from the auxiliary carrier 2 in a separating step.
  • the corresponding intermediate product is shown in FIG. 6F and can be singulated into individual semiconductor devices 1 in a further step.
  • the carrier film 16 can remain on the fi nal product but can also be detached from the semiconductor devices.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un dispositif à semi-conducteur comprenant les étapes consistant à fournir un support auxiliaire, à disposer une couche élastomère sur le support auxiliaire, à disposer au moins une pièce, en particulier une grille de connexion, sur un côté de la couche élastomère qui est opposé au support auxiliaire, à disposer au moins un composant à semi-conducteur sur un côté de la pièce qui est opposé au support auxiliaire, à couler ledit au moins un composant à semi-conducteur avec une matière de scellement, de telle sorte que ledit au moins un composant à semi-conducteur soit entouré de la matière de scellement dans la direction latérale, et à séparer du support auxiliaire ladite au moins une pièce sur laquelle est disposé le composant à semi-conducteur, en soumettant la couche élastomère à une force de traction dans au moins une première zone dans la direction latérale.
PCT/EP2022/053252 2021-02-12 2022-02-10 Dispositif à semi-conducteur et son procédé de fabrication WO2022171743A1 (fr)

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JP2010262992A (ja) 2009-04-30 2010-11-18 Sanyo Electric Co Ltd 半導体モジュールおよび携帯機器
JP5852427B2 (ja) 2011-12-06 2016-02-03 日東電工株式会社 両面粘着シート
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US20110024906A1 (en) 2007-10-09 2011-02-03 Infineon Technologies Ag Semiconductor chip package, semiconductor chip assembly, and method for fabricating a device
DE102012109905A1 (de) * 2012-10-17 2014-04-17 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterbauteilen
US20150228619A1 (en) * 2012-12-21 2015-08-13 Panasonic Intellectual Property Management Co., Ltd. Electronic component package and method for manufacturing same
DE102015102699A1 (de) * 2015-02-25 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil
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