WO2022161395A1 - 一种电子设备及其控制方法 - Google Patents

一种电子设备及其控制方法 Download PDF

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Publication number
WO2022161395A1
WO2022161395A1 PCT/CN2022/073994 CN2022073994W WO2022161395A1 WO 2022161395 A1 WO2022161395 A1 WO 2022161395A1 CN 2022073994 W CN2022073994 W CN 2022073994W WO 2022161395 A1 WO2022161395 A1 WO 2022161395A1
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Prior art keywords
bob
mosfet
voltage
input voltage
electronic device
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PCT/CN2022/073994
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English (en)
French (fr)
Inventor
郑乐平
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维沃移动通信有限公司
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Publication of WO2022161395A1 publication Critical patent/WO2022161395A1/zh

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/157—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1582—Buck-boost converters

Definitions

  • the present application belongs to the field of electronic technology, and specifically relates to an electronic device and a control method thereof.
  • Buck or Boost (BOB) power supplies are often used in electronic equipment to power modules such as low dropout regulators (LDOs). In the process of supplying power from the BOB power supply, it often involves switching the working mode of the BOB power supply.
  • LDOs low dropout regulators
  • the working mode of the BOB power supply is switched according to the magnitude relationship between the actual input voltage of the BOB power supply and the configured output voltage.
  • the power consumption is not considered in the process of switching the working mode of the BOB power supply, and there is a problem of serious power consumption.
  • the present application aims to provide an electronic device and a control method thereof, at least to solve the problem of serious power consumption without considering power consumption in the process of switching the working mode of the BOB power supply in the prior art.
  • an embodiment of the present application provides an electronic device, including: a CPU, a buck-boost converter BOB, an inductor, and a switching element, the CPU is respectively connected to the BOB and the switching element, and the The BOB has at least two pairs of pins, a first pair of pins in the at least two pairs of pins are respectively connected to both ends of the inductor, and a second pair of pins in the at least two pairs of pins are respectively connected to the switch Both ends of the element; when the input voltage of the BOB is less than or equal to the voltage threshold, or the input voltage of the BOB is equal to the actual output voltage of the BOB, the switching element is turned on; wherein the voltage threshold is equal to the actual output voltage of the BOB/n, where n is the conversion efficiency of the BOB.
  • an embodiment of the present application provides a method for controlling the electronic device described above, including: acquiring an input voltage of a BOB; determining whether the input voltage satisfies a preset condition, where the preset condition includes: the The input voltage of the BOB is less than or equal to the voltage threshold, or the input voltage of the BOB is equal to the actual output voltage of the BOB; wherein, the voltage threshold is equal to the actual output voltage of the BOB/ ⁇ , where ⁇ is the conversion of the BOB efficiency; when the input voltage meets the preset condition, the switching element is turned on.
  • the switch element is connected to the CPU, and the second pair of pins of the at least two pairs of pins of the BOB are used to connect the two ends of the switch element respectively;
  • the switching element is turned on.
  • the switching element when the input voltage of the BOB is less than or equal to the voltage threshold, the switching element is turned on, which can improve the conversion efficiency of the BOB path and reduce part of the power consumption of the BOB; or, when the input voltage of the BOB is equal to the actual value of the BOB
  • the switching element by turning on the switching element, compared with the related art when the BOB is in the bypass mode, the on-resistance of the BOB power supply is reduced, thereby reducing part of the power consumption of the BOB and achieving the effect of power saving.
  • FIG. 1 is a structural block diagram of an electronic device provided by an embodiment of the present application.
  • FIG. 2(a) is a structural block diagram of an electronic device provided by another embodiment of the present application.
  • FIG. 2(b) is a structural block diagram of an electronic device provided by another embodiment of the present application.
  • FIG. 3(a) is a schematic schematic diagram of an electronic device provided by another embodiment of the present application.
  • FIG. 3(b) is a schematic schematic diagram of an electronic device provided by another embodiment of the present application.
  • FIG. 4(a) is a schematic schematic diagram of an electronic device provided by another embodiment of the present application.
  • FIG. 4(b) is a schematic schematic diagram of an electronic device provided by another embodiment of the present application.
  • FIG. 5 is a schematic schematic diagram of a BOB power supply in an electronic device provided by an embodiment of the present application.
  • FIG. 6 is a schematic diagram of a control method of an electronic device provided by an embodiment of the present application.
  • FIG. 7 is a schematic diagram of a control method for an electronic device provided by an embodiment of the present application.
  • FIG. 8 is a schematic diagram of a control method for an electronic device provided by an embodiment of the present application.
  • FIG. 9 is a schematic diagram of a control method of an electronic device provided by an embodiment of the present application.
  • the electronic devices in the embodiments of the present application may be mobile terminals such as mobile phones, ipads, smart watches, and smart glasses, which are not specifically limited here.
  • the BOB in the electronic equipment can seamlessly switch the three working modes of the BOB according to the relationship between the actual input voltage V IN of the BOB and the output voltage V SET configured by the BOB: buck mode, boost mode, bypass mode , allowing the BOB to regulate the output voltage over the entire input voltage range.
  • V IN >V SET
  • V BOB V SET
  • BOB switches to buck mode.
  • V BOB V SET
  • V IN V SET
  • V BOB V SET
  • V IN is the actual input voltage of BOB
  • V SET is the output voltage configured by BOB
  • V BOB is the actual output voltage of BOB.
  • the output voltage of the BOB configuration is generally equal to the actual output voltage of the BOB.
  • the conversion efficiency ⁇ of BOB can also be considered in the switching process of the BOB working mode.
  • the conversion efficiency ⁇ of BOB is the output power of BOB/input power of BOB. Under different input voltages and different output currents, the conversion efficiency ⁇ of BOB is not a fixed constant value. If the conversion efficiency ⁇ of BOB is small, then It shows that the invalid power consumption of BOB is large.
  • a BOB power supply in an electronic device can be used to power other modules, eg, LDO modules, flash modules, and the like.
  • the right end of the BOB power supply can be connected in series with LDO modules (not shown in FIG. 1 ). That is, when the BOB power supply in the electronic device is used to supply power to the LDO module, the output voltage of the BOB power supply is the input voltage of the LDO module.
  • the working mode of the LDO module is generally the step-down mode, that is to say, the output voltage of the LDO can generally be lower than the input voltage.
  • the output voltage of the BOB power supply when used as the input voltage of the LDO module, the output voltage of the BOB power supply can generally be at least 3.45V and 3.65V, that is, the input voltage of the LDO module can generally be at least 3.45V and 3.65V.
  • the output voltage of the LDO module can generally be 1.8V, 2.8V, 3.0V, 3.3V, etc.
  • the electronic device and the control method thereof provided by the embodiments of the present application can improve the conversion efficiency of the BOB path.
  • the BOB channel by comparing the conversion efficiency of the BOB channel and the conversion efficiency of the LDO channel, when the condition that the conversion efficiency of the BOB channel is less than or equal to the conversion efficiency of the LDO channel is satisfied, the BOB channel can be switched to an equivalent On the LDO path, the conversion efficiency of the BOB path can be improved, part of the power consumption of the BOB can be reduced, and power saving can be achieved.
  • the BOB path mentioned in the embodiments of the present application may be a path including the BOB and a module (eg, an LDO module) powered by the BOB, and V IN may also be an input voltage representing the BOB. It should be understood that, the following description only takes the BOB path including the path of the BOB and the LDO module as an example for illustration, and is not intended to be limiting.
  • the conversion efficiency of the BOB path can be the output power of the BOB path/the input power of the BOB path.
  • the BOB supplies power to the LDO module, current flows in from the BOB and flows out of the LDO module.
  • the input power of the BOB can be used as the input power of the BOB path
  • the output power of the LDO module can be used as the output power of the BOB path. Accordingly, the conversion efficiency of the BOB path can be the output power of the LDO module/the input power of the BOB.
  • the output voltage of the BOB is equal to the input voltage of the LDO module
  • the output current of the BOB is equal to the input current of the LDO module, that is, the output power of the BOB is equal to the input power of the LDO module.
  • the conversion efficiency of the BOB path can be further extended as (output power of LDO module/input power of LDO module)*(output power of BOB/input power of BOB).
  • the conversion efficiency of BOB (ie, output power of BOB/input power of BOB) can generally be set to ⁇ .
  • V OUT is the output voltage of the LDO module
  • V BOB is the output voltage of BOB.
  • the conversion efficiency of the BOB channel is less than or equal to the conversion efficiency of the LDO channel.
  • the BOB channel is switched to the equivalent LDO channel.
  • the equivalent LDO channel refers to the channel that only contains the LDO module, which can improve the conversion efficiency of the BOB channel and reduce the Part of the power consumption of the BOB.
  • the embodiments of the present application provide an electronic device and a control method thereof, which can obtain the input voltage of the BOB of the electronic device, and when the input voltage satisfies the condition of V IN ⁇ V BOB / ⁇ , bypass the BOB to connect the BOB to the electronic device.
  • the BOB path is switched to an equivalent LDO path, which can improve the conversion efficiency of the BOB path and reduce part of the power consumption of the BOB.
  • the embodiment of the present application proposes another way to reduce the power consumption of the BOB power supply.
  • the switching element can be turned on to further reduce the on-resistance of the BOB power supply, and further reduce a part of the power consumption of the BOB.
  • the electronic device includes: a central processing unit (CPU), a BOB power supply, and a switching element.
  • the BOB power supply includes a BOB and an inductor, and the CPU is respectively connected to the The BOB is connected to the switching element, and the BOB is connected to the switching element.
  • the BOB has at least two pairs of pins, and the first pair of pins in the at least two pairs of pins are respectively connected to both ends of the inductor; the second pair of pins in the at least two pairs of pins or the The first pair of pins are respectively connected to both ends of the switching element; when the input voltage of the BOB is less than or equal to a voltage threshold, the BOB is switched to a bypass mode; wherein the voltage threshold is equal to the voltage threshold The actual output voltage of the BOB/ ⁇ , where ⁇ is the conversion efficiency of the BOB.
  • the switch element is connected to the CPU, and the second pair of pins or the first pair of pins of the at least two pairs of pins of the BOB are respectively connected to the Both ends of the switching element switch the BOB to bypass mode when the input voltage of the BOB is less than or equal to a voltage threshold; wherein the voltage threshold is equal to the actual output voltage of the BOB/ ⁇ , where , ⁇ is the conversion efficiency of the BOB, in this way, when the input voltage of the BOB is less than or equal to the actual output voltage of the BOB/ ⁇ , the conversion efficiency of the BOB path is less than or equal to the conversion efficiency of the LDO path, and the BOB path is switched to an equivalent
  • the LDO channel specifically switching the BOB to the bypass mode, can improve the conversion efficiency of the BOB channel, thereby reducing a part of the power consumption of the BOB and achieving the effect of power saving.
  • FIG. 5 for the schematic principle diagram of the BOB power supply in the electronic device shown in FIG. 1 .
  • the BOB power supply includes a BOB and an inductor, and the BOB can be a packaged BOB chip.
  • the block diagram of the dotted line shown in FIG. 5 is a schematic diagram of the BOB chip. The specific structure is limited.
  • the BOB chip shown in Figure 5 may include: L1 pin, L2 pin, VIN pin, and VOUT pin; L1 pin and L2 pin are generally used to connect the inductor L; the BOB chip can have 4 switches inside : K1, K2, K3, K4, these 4 switches work together to control the flow of input current inside the chip to achieve boost and buck functions.
  • the BOB chip can also implement a bypass function.
  • the working principle of BOB switching to bypass mode is: the switch K1 and switch K4 inside the BOB chip are turned on, the switch K2 and switch K3 are not turned on, the current can enter from the V IN pin and flow through the switch K1 , inductor L, switch K4, flow out from the V OUT pin.
  • the second pair of pins may include a first voltage pin and a second voltage pin;
  • the first voltage pin It can be the VIN pin shown in FIG. 2(a), the second voltage pin can be the VOUT pin shown in FIG. 2(a), and the VIN pin and the VOUT pin can be connected to the Both ends of the switching element; when the input voltage of the BOB is less than or equal to the voltage threshold, or the input voltage of the BOB is equal to the actual output voltage of the BOB, the switching element is turned on; wherein the voltage The threshold is equal to the actual output voltage of the BOB/n, where n is the conversion efficiency of the BOB.
  • the on-resistance of the switching element can be made very low (for example, 2m ⁇ ), and the on-resistance of the switching element is lower than the on-resistance of the BOB power supply in the related art when the BOB is in bypass mode.
  • the switching element is connected to the CPU, and the first voltage pin and the second voltage pin of the BOB are used to connect the two ends of the switching element respectively,
  • the switching element is turned on.
  • the switching element when the input voltage of the BOB is less than or equal to the voltage threshold, the switching element is turned on, which can improve the conversion efficiency of the BOB path, thereby reducing a part of the power consumption of the BOB; or, when the input voltage of the BOB is equal to the In the case of the actual output voltage of the BOB, by turning on the switching element, compared with the BOB in the bypass mode in the related art, the on-resistance of the BOB power supply is reduced, thereby reducing a part of the power consumption of the BOB and saving power. Effect.
  • the first pair of pins may include a first inductance pin and a second inductance pin;
  • the first inductance The pin can be the L1 pin shown in Figure 2(b), the second inductor pin can be the L2 pin shown in Figure 2(b), the L1 pin and the L2 pin can be connected respectively Both ends of the switching element; when the input voltage of the BOB is less than or equal to the voltage threshold, or the input voltage of the BOB is equal to the actual output voltage of the BOB, the BOB is switched to the bypass mode, and turn on the switching element; wherein, the voltage threshold is equal to the actual output voltage of the BOB/ ⁇ , where ⁇ is the conversion efficiency of the BOB.
  • the switch element is connected to the CPU, and the first inductance pin and the second inductance pin of the BOB are used to connect the two ends of the switch element respectively.
  • the BOB is switched to the bypass mode, and the switching element is turned on.
  • the BOB is switched to the bypass mode, and the switching element is turned on to bypass the BOB, which can improve the conversion efficiency of the BOB path, thereby reducing a part of the BOB.
  • the switching element may be a component having a switching function and low on-resistance.
  • the switching element may include a Metal-Oxide-Semiconductor Field-Effect Tran sistor (MOSFET).
  • MOSFET Metal-Oxide-Semiconductor Field-Effect Tran sistor
  • the on-resistance of the MOSFET can be made very low, such as 2m ⁇ .
  • the switching element may also include other common switches with switching function and low on-resistance, and the type of the switching element is not specifically limited here.
  • the number of MOSFETs may be one or more.
  • the types of MOSFETs can also be various. For example, it may be an N-channel MOSFET (N-channel MOSFET) or a P-channel MOSFET (P-channel MOSFET).
  • N-channel MOSFET N-channel MOSFET
  • P-channel MOSFET P-channel MOSFET
  • the embodiments of the present application do not limit the specific number and type of MOSFETs.
  • the switching element when the switching element includes a MOSFET, the switching element may include an N-channel MOSFET; alternatively, the switching element may include a P-channel MOSFET.
  • an N-channel MOSFET or a P-channel MOSFET can be selected as the switching element.
  • the on-resistance of N-channel MOSFET can generally be 2m ⁇ , and the on-resistance of N-channel MOSFET is generally lower than that of P-channel MOSFET, that is, compared with P-channel MOSFET, N-channel MOSFET More energy consumption can be saved.
  • the switching element when the switching element includes a pair of reversely connected MOSFETs, the switching element may include a pair of reversed N-channel MOSFETs; or, the switching element may include a pair of reversed P-channel MOSFETs MOSFETs.
  • a pair of reversely connected MOSFETs (eg, a pair of reversed N-channel MOSFETs, or a pair of reversed P-channel MOSFETs) is more practical than one MOSFET.
  • the switching element is an N-channel MOSFET, when the BOB is in buck mode, the external switching element (an N-channel MOSFET) may leak current due to the body diode existing inside the N-channel MOSFET.
  • the switching element is a pair of reversed N-channel MOSFETs, when the BOB is in step-down mode, since a pair of N-channel MOSFETs are connected in reverse, the body diodes inside the two MOSFETs are also in opposite directions, so there is no risk of leakage. Improves the security of electronic equipment.
  • the switching element includes a MOSFET
  • the MOSFET has a gate, a source and a drain
  • the gate is connected to the CPU
  • the second The pair of pins includes a first voltage pin and a second voltage pin, and the first voltage pin and the second voltage pin are respectively connected to the source and the drain of the MOSFET.
  • the CPU can control the conduction of the MOSFET by sending an enable signal to the gate of the MOSFET.
  • the gate of the MOSFET is connected to the CPU, and the first voltage pin and the second voltage pin of the BOB are respectively connected to the source of the MOSFET and drain, in this way, the on-resistance of the BOB power supply can be reduced by controlling the conduction of the MOSFET, thereby reducing a part of the power consumption of the BOB and achieving the effect of power saving.
  • the connection of the first voltage pin and the second voltage pin to the source electrode and the drain electrode of the MOSFET may include the following two situations: one, The first voltage pin is connected to the source of the MOSFET, the second voltage pin is connected to the drain of the MOSFET; secondly, the first voltage pin is connected to the drain of the MOSFET, the The second voltage pin is connected to the source of the MOSFET.
  • the MOSFET may be an N-channel MOSFET.
  • the VIN pin can be connected to the source of the N-channel MOSFET, and the VOUT pin can be connected to the drain of the N-channel MOSFET.
  • the gate of the N-channel MOSFET can be connected to the central processing unit CPU (not shown in the figure).
  • the gate of the N-channel MOSFET is connected to the CPU, and the VIN pin is used to connect the source of the N-channel MOSFET, so the The VOUT pin is connected to the drain of the N-channel MOSFET.
  • the on-resistance of the BOB power supply can be reduced by controlling the conduction of the N-channel MOSFET, thereby reducing part of the power consumption of the BOB and achieving the effect of power saving.
  • the on-resistance of an N-channel MOSFET is lower, which can further reduce a part of the power consumption of the electronic device.
  • the MOSFET may be a P-channel MOSFET.
  • the VIN pin is connected to the drain of the P-channel MOSFET
  • the VOUT pin is connected to the source of the P-channel MOSFET
  • the gate of the P-channel MOSFET is connected to the central processing unit. CPU (not shown).
  • the gate of the P-channel MOSFET is connected to the CPU, and the VIN pin is used to connect the drain of the P-channel MOSFET, and the VOUT The pin is connected to the source of the P-channel MOSFET.
  • the on-resistance of the BOB power supply can be reduced by controlling the conduction of the P-channel MOSFET, thereby reducing part of the power consumption of the BOB and achieving the effect of power saving.
  • the switching element may include a pair of MOSFETs connected in opposite directions, and the second pair of pins includes a first voltage pin and a second voltage pin, so The first voltage pin, the pair of oppositely connected MOSFETs and the second voltage pin are sequentially connected in series.
  • a pair of reversely connected MOSFETs are added in the electronic device, and the second pair of pins of the BOB is used, and the second pair of pins includes a first voltage pin and a second voltage pin. pin, the first voltage pin, the pair of reversely connected MOSFETs and the second voltage pin are connected in series in sequence, so that BOB can be reduced by controlling the conduction of a pair of reversely connected MOSFETs
  • the on-resistance of the power supply can reduce part of the power consumption of the BOB and achieve the effect of power saving.
  • the sequential connection of the first voltage pin, the pair of oppositely connected MOSFETs, and the second voltage pin in series may include the following two situations: First, the first MOSFET and the second MOSFET are both N-channel MOSFETs; the drain of the first MOSFET is connected to the drain of the second MOSFET, the source of the first MOSFET is connected to the first voltage pin, and the source of the second MOSFET is connected to the first voltage pin.
  • the source is connected to the second voltage pin; secondly, the first MOSFET and the second MOSFET are both P-channel MOSFETs; the source of the first MOSFET is connected to the source of the second MOSFET, and the drain of the first MOSFET is connected The first voltage pin, the drain of the second MOSFET is connected to the second voltage pin.
  • the pair of oppositely connected MOSFETs includes a first MOSFET and a second MOSFET.
  • the first MOSFET and the second MOSFET are both N-channel MOSFETs; the drain of the first MOSFET is connected to the drain of the second MOSFET, and the source of the first MOSFET is connected to the VIN pin , the source of the second MOSFET is connected to the VOUT pin.
  • the gate of the first MOSFET and the gate of the second MOSFET are both connected to the CPU (not shown).
  • a pair of reversely connected N-channel MOSFETs are added in the electronic equipment, the gates of the N-channel MOSFETs are connected to the CPU, and the drains of the first MOSFET and the second MOSFET are used to The drain is connected, the source of the first MOSFET is connected to the VIN pin, and the source of the second MOSFET is connected to the VOUT pin.
  • the on-resistance of the small BOB power supply can reduce part of the power consumption of the BOB and achieve the effect of power saving.
  • the on-resistance of a pair of reversely connected N-channel MOSFETs is lower, which can further reduce a part of the power of the electronic device. consumption.
  • the directions of the two body diodes inside a pair of reversely connected N-channel MOSFETs are also opposite, so that there is no risk of leakage in the electronic device, which improves the safety of the electronic device.
  • the pair of oppositely connected MOSFETs includes a first MOSFET and a second MOSFET.
  • the first MOSFET and the second MOSFET are both P-channel MOSFETs; the source of the first MOSFET is connected to the source of the second MOSFET, the drain of the first MOSFET is connected to the first voltage pin, and the drain of the second MOSFET is connected to the first voltage pin.
  • the second voltage pin is connected, and both the gate of the first MOSFET and the gate of the second MOSFET are connected to the CPU (not shown).
  • a pair of reversely connected P-channel MOSFETs are added in the electronic equipment, the gates of the pair of reversely connected P-channel MOSFETs are connected to the CPU, and the source of the first MOSFET is used to connect to the CPU.
  • the source of the second MOSFET is connected to the VIN pin, the drain of the first MOSFET is connected to the VOUT pin, and the drain of the second MOSFET is connected to the VOUT pin. It is turned on to reduce the on-resistance of the BOB power supply, thereby reducing part of the power consumption of the BOB and achieving the effect of power saving.
  • the two body diodes inside a pair of reversely connected P-channel MOSFETs are also in opposite directions, so that there is no risk of leakage in the electronic device, which improves the reliability of the electronic device. safety.
  • the switch element in addition to using the second pair of pins including the first voltage pin and the second voltage pin to connect the switch elements as described above, the switch element may also be connected by using a second pair of pins including a first voltage pin and a second voltage pin.
  • the first pair of pins of the first inductor pin and the second inductor pin are respectively connected to the switching element.
  • the switching element includes a MOSFET
  • the MOSFET has a gate, a source and a drain
  • the gate is connected to the CPU
  • the pin includes a first inductance pin and a second inductance pin, and the first inductance pin and the second inductance pin are respectively connected to the source and the drain of the MOSFET.
  • the gate of the MOSFET is connected to the CPU, and the first inductance pin and the second inductance pin of the BOB are respectively connected to the source of the MOSFET and drain, in this way, the on-resistance of the BOB power supply can be reduced by controlling the conduction of the MOSFET, thereby reducing a part of the power consumption of the BOB and achieving the effect of power saving.
  • the connection of the first inductance pin and the second inductance pin to the source and drain of the MOSFET may include the following two situations: one, The first inductance pin is connected to the source of the MOSFET, the second inductance pin is connected to the drain of the MOSFET; secondly, the first inductance pin is connected to the drain of the MOSFET, the The second inductor pin is connected to the source of the MOSFET.
  • the MOSFET may be an N-channel MOSFET.
  • the first inductor pin and all The second inductance pin is connected to the source and drain of the MOSFET respectively, which may be specifically: the L1 pin is connected to the source of the N-channel MOSFET, and the L2 pin is connected to the drain of the N-channel MOSFET.
  • the gate of the N-channel MOSFET is connected to the central processing unit CPU (not shown in the figure).
  • the gate of the N-channel MOSFET is connected to the CPU, and the L1 pin is used to connect the source of the N-channel MOSFET, so the The L2 pin is connected to the drain of the N-channel MOSFET.
  • the on-resistance of the BOB power supply can be reduced by controlling the conduction of the N-channel MOSFET, thereby reducing part of the power consumption of the BOB and achieving the effect of power saving.
  • the on-resistance of an N-channel MOSFET is lower, which can further reduce a part of the power consumption of the electronic device.
  • the MOSFET may be a P-channel MOSFET.
  • the first inductor pin and the second inductor pin are respectively connected
  • the source and drain of the MOSFET can be specifically: the L1 pin is connected to the drain of the P-channel MOSFET, the L2 pin is connected to the source of the P-channel MOSFET; the gate of the P-channel MOSFET is connected to the The central processing unit CPU (not shown in the figure).
  • the gate of the P-channel MOSFET is connected to the CPU, and the L1 pin is used to connect the drain of the P-channel MOSFET, the L2 The pin is connected to the source of the P-channel MOSFET.
  • the switching element may include a pair of MOSFETs connected in opposite directions, and the first pair of pins includes a first inductance pin and a second inductance pin, so The first inductance pin, the pair of oppositely connected MOSFETs and the second inductance pin are sequentially connected in series.
  • a pair of reversely connected MOSFETs are added in the electronic device, and the first pair of pins of the BOB is used, and the first pair of pins includes a first inductance pin and a second inductance pin pin, the first inductance pin, the pair of reversely connected MOSFETs and the second inductance pin are connected in series in sequence, so that BOB can be reduced by controlling the conduction of a pair of reversely connected MOSFETs
  • the on-resistance of the power supply can reduce part of the power consumption of the BOB and achieve the effect of power saving.
  • the serial connection of the first inductor pin, the pair of oppositely connected MOSFETs, and the second inductor pin may include the following two situations: 1. Both the first MOSFET and the second MOSFET are N-channel MOSFETs; the drain of the first MOSFET is connected to the drain of the second MOSFET, the source of the first MOSFET is connected to the first inductor pin, and the second MOSFET is connected to the drain of the second MOSFET.
  • the source is connected to the second inductor pin; secondly, the first MOSFET and the second MOSFET are both P-channel MOSFETs; the source of the first MOSFET is connected to the source of the second MOSFET, and the drain of the first MOSFET is connected The first inductor pin and the drain of the second MOSFET are connected to the second inductor pin.
  • the pair of MOSFETs connected in opposite directions include a first MOSFET and a second MOSFET.
  • the first MOSFET and the second MOSFET are both N-channel MOSFET; the drain of the first MOSFET is connected to the drain of the second MOSFET, the source of the first MOSFET is connected to the L1 pin, and the source of the second MOSFET is connected to the L2 pin.
  • the gate of the first MOSFET and the gate of the second MOSFET are both connected to the CPU (not shown).
  • a pair of reversely connected N-channel MOSFETs are added in the electronic equipment, the gates of the N-channel MOSFETs are connected to the CPU, and the drains of the first MOSFET and the second MOSFET are used to The drain is connected, the source of the first MOSFET is connected to the L1 pin, and the source of the second MOSFET is connected to the L2 pin.
  • the on-resistance of the small BOB power supply can reduce part of the power consumption of the BOB and achieve the effect of power saving.
  • the on-resistance of a pair of reversely connected N-channel MOSFETs is lower, which can further reduce a part of the power of the electronic device. consumption.
  • the directions of the two body diodes inside a pair of reversely connected N-channel MOSFETs are also opposite, so that there is no risk of leakage in the electronic device, which improves the safety of the electronic device.
  • the first MOSFET and the second MOSFET are both P-channel MOSFETs; the source of the first MOSFET is connected to the source of the second MOSFET, and the drain of the first MOSFET is connected to the source of the second MOSFET.
  • the first inductor pin, the drain of the second MOSFET is connected to the second inductor pin, and the gate of the first MOSFET and the gate of the second MOSFET are both connected to the CPU (not shown).
  • a pair of reversely connected P-channel MOSFETs are added in the electronic equipment, the gates of the pair of reversely connected P-channel MOSFETs are connected to the CPU, and the source of the first MOSFET is used to connect to the CPU.
  • the source of the second MOSFET is connected, the drain of the first MOSFET is connected to the L1 pin, and the drain of the second MOSFET is connected to the L2 pin. It is turned on to reduce the on-resistance of the BOB power supply, thereby reducing part of the power consumption of the BOB and achieving the effect of power saving.
  • the two body diodes inside a pair of reversely connected P-channel MOSFETs are also in opposite directions, so that there is no risk of leakage in the electronic device, which improves the reliability of the electronic device. safety.
  • the above-mentioned electronic equipment provided by the embodiments of the present application can improve the conversion efficiency of the BOB path by bypassing the BOB, and reduce a part of the power consumption of the BOB; at the same time, by turning on the switching element, the on-resistance of the BOB power supply is reduced, reducing the BOB power supply. part of the power consumption.
  • FIG. 6 is a schematic diagram of a method for controlling an electronic device provided by an embodiment of the present application. 6, an embodiment of the present application may provide a method for controlling an electronic device as shown in The method for controlling an electronic device provided by the embodiment may include:
  • step 610 the input voltage of the BOB is obtained.
  • Step 620 Determine whether the input voltage satisfies a preset condition.
  • Step 630 when the input voltage satisfies the preset condition, switch the BOB to a power saving working state.
  • the input voltage of the BOB can be obtained, and when the input voltage meets the preset condition, the BOB can be switched to a power-saving working state. It can realize fast switching of power-saving working state.
  • the method for controlling an electronic device before determining whether the input voltage satisfies a preset condition, further includes: acquiring the value of the configuration output voltage V SET , the output current and ⁇ of the BOB; wherein, determining the Whether the input voltage satisfies a preset condition may include: determining whether the input voltage is less than or equal to a voltage threshold equal to the actual output voltage of the BOB/ ⁇ , where ⁇ is the conversion efficiency of the BOB.
  • the conversion efficiency of LDO is greater than or equal to the conversion efficiency of BOB channel.
  • the channel is switched to the equivalent LDO channel, which can improve the conversion efficiency of the BOB channel and reduce part of the power consumption of the BOB.
  • the switching of the BOB to the power-saving working state includes: switching the BOB to a bypass mode and turning off the switching element; or, switching the BOB to a bypass mode and turning on all the the switching element.
  • the above two switching methods can bypass the BOB (that is, switch the BOB path to the equivalent LDO path), improve the conversion efficiency of the BOB path, and reduce part of the power consumption of the BOB;
  • the on-resistance of the BOB power supply can be further reduced, thereby reducing part of the power consumption of the BOB.
  • the method for controlling an electronic device further includes: step 640 , when the input voltage is greater than the voltage threshold, the switching element is turned off, and the BOB is made to work normally.
  • the normal operation of the BOB refers to the three working modes of the BOB that can be seamlessly switched by comparing the actual input voltage V IN of the BOB with the output voltage V SET configured by the BOB, which will not be repeated below.
  • the method for controlling the above-mentioned electronic device by acquiring the input voltage of the BOB; determining whether the input voltage satisfies the preset condition; when the input voltage satisfies the preset condition, switching the BOB to save power working status.
  • the conversion efficiency of the BOB channel is less than or equal to the conversion efficiency of the LDO channel, and the BOB channel can be switched to the bypass mode to control the BOB channel to be switched to the equivalent LDO channel, reducing BOB part of the power consumption to achieve the effect of power saving.
  • the switching element when the BOB is switched to the bypass mode, the switching element is further turned on, which can reduce the on-resistance of the BOB power supply when the BOB is in the bypass mode, thereby further reducing part of the power consumption of the BOB.
  • the embodiment of the present application may provide a method for controlling an electronic device as shown in FIG. 2( a ).
  • the execution subject of the method for controlling an electronic device provided by the embodiment of the present application may be the electronic device mentioned above.
  • the method for controlling an electronic device provided in the example may include: acquiring an input voltage of the BOB; determining whether the input voltage satisfies a preset condition, the preset condition including: the input voltage of the BOB is less than or equal to a voltage threshold, or the The input voltage of the BOB is equal to the actual output voltage of the BOB; wherein, the voltage threshold is equal to the actual output voltage of the BOB/ ⁇ , where ⁇ is the conversion efficiency of the BOB; when the input voltage satisfies the preset condition When the switch element is turned on.
  • the on-resistance of the switching element can be made very low (for example, 2m ⁇ ), which can be lower than the on-resistance of the BOB power supply in the related art when the BOB is in the bypass mode.
  • the electronic device determines whether the input voltage satisfies a preset condition by acquiring the input voltage of the BOB, and when the input voltage satisfies the preset condition, the switching element is turned on.
  • the switching element When the input voltage of the BOB is less than or equal to the voltage threshold, turning on the switching element can improve the conversion efficiency of the BOB path, thereby reducing a part of the power consumption of the BOB; or, when the input voltage of the BOB is equal to the actual value of the BOB
  • the on-resistance of the BOB power supply is reduced, thereby reducing part of the power consumption of the BOB and achieving the effect of power saving.
  • the method for controlling an electronic device further includes: acquiring the values of V SET , output current and ⁇ of the BOB.
  • turning on the switching element includes: when the input voltage of the BOB is less than or equal to the voltage threshold, stopping the BOB from working, and Turning on the switching element; or switching the BOB to bypass mode when the input voltage of the BOB is less than or equal to a voltage threshold, or the input voltage of the BOB is equal to the actual output voltage of the BOB , and turn on the switching element.
  • the method for controlling an electronic device further includes: when the input voltage does not meet a preset condition, turning off the switching element and making the BOB work normally.
  • the switching element can improve the conversion efficiency of the BOB path, thereby reducing part of the power consumption of the BOB; or, when the input voltage of the BOB is equal to the actual output voltage of the BOB, by switching the BOB to bypass mode and turning on the switching element , compared with the related art when the BOB is in the bypass mode, the on-resistance of the power supply of the BOB is reduced, so that part of the power consumption of the BOB can be reduced to achieve the effect of power saving.
  • the embodiment of the present application may provide a method for controlling an electronic device as shown in FIG. 2(b), and the execution subject of the method for controlling an electronic device provided by the embodiment of the present application may be the electronic device mentioned above, which is implemented in the present application.
  • the method for controlling an electronic device provided in the example may include: acquiring the input voltage V IN of the BOB; determining whether the input voltage satisfies a preset condition, the preset condition including: the input voltage of the BOB is less than or equal to a voltage threshold, or The input voltage of the BOB is equal to the actual output voltage of the BOB; wherein, the voltage threshold is equal to the actual output voltage of the BOB/ ⁇ , where ⁇ is the conversion efficiency of the BOB; when the input voltage meets the preset When a condition is set, the BOB is switched to bypass mode and the switching element is turned on.
  • the method for controlling an electronic device before determining whether the input voltage satisfies a preset condition, further includes: acquiring the values of V SET , output current and ⁇ of the BOB.
  • the method for controlling the electronic device shown in FIG. 2(b) by acquiring the input voltage V IN of the BOB; determining whether the input voltage satisfies the preset condition; when the input voltage satisfies the preset condition , switches BOB to bypass mode and turns on the switching element.
  • the BOB when the input voltage of the BOB is less than or equal to the voltage threshold, the BOB can be switched to the bypass mode and the switching element is turned on to bypass the BOB, which can improve the conversion efficiency of the BOB path, thereby reducing a part of the BOB.
  • the on-resistance of the BOB power supply can reduce part of the power consumption of the BOB and achieve the effect of power saving.
  • the method for controlling an electronic device further includes: when the input voltage does not meet a preset condition, turning off the switching element and making the BOB work normally.
  • the method further includes: when the input voltage of the BOB is less than or equal to a voltage threshold, switching the BOB to a side circuit mode and turn off the switching element. In this way, when the input voltage of the BOB is less than or equal to the voltage threshold, the BOB can be switched to the bypass mode and the switching element is turned off to bypass the BOB, which can improve the conversion efficiency of the BOB path, thereby reducing a part of the power of the BOB. consumption.
  • the embodiment of the present application may provide a method for controlling an electronic device as shown in FIG. 3( a ).
  • the execution subject of the method for controlling an electronic device provided by the embodiment of the present application may be the electronic device mentioned above.
  • the method for controlling an electronic device provided by the example may include: obtaining the input voltage of BOB; determining whether the input voltage satisfies the condition of V IN ⁇ V BOB /n; when the input voltage satisfies V IN ⁇ V BOB /n, applying the The BOB switches to the power saving working state.
  • the method for controlling an electronic device before determining whether the input voltage satisfies the condition of V IN ⁇ V BOB / ⁇ , the method for controlling an electronic device provided by the embodiment of the present application further includes: acquiring the values of V SET , output current and ⁇ of BOB.
  • the switching of the BOB to a power-saving working state includes: stopping the BOB from working and turning on an N-channel MOSFET on the periphery of the BOB; or, switching the BOB to a bypass mode and turning on the BOB. turn on an N-channel MOSFET on the periphery of the BOB; or switch the BOB to a bypass mode, and turn off an N-channel MOSFET on the periphery of the BOB.
  • the method for controlling an electronic device further includes: when the input voltage does not satisfy V IN ⁇ V BOB /n, turning off the N-channel MOSFET on the periphery of the BOB, and making the BOB work normally.
  • the input voltage of BOB is obtained; it is determined whether the input voltage satisfies the condition of V IN ⁇ V BOB / ⁇ ; when the input voltage satisfies the condition of V IN ⁇ V BOB / ⁇ when the BOB is switched to a power saving working state.
  • the BOB channel can be switched to an equivalent LDO channel by controlling the BOB channel.
  • the BOB is switched to the bypass mode, and an N channel around the BOB is closed MOSFET; or, stop the BOB from working, and turn on an N-channel MOSFET on the periphery of the BOB; or switch the BOB to bypass mode and turn on an N-channel MOSFET on the periphery of the BOB.
  • the BOB power supply is bypassed to improve the conversion efficiency of the BOB path, reduce part of the power consumption of the BOB, and achieve the effect of power saving.
  • FIG. 7 is a schematic diagram of a method for controlling an electronic device provided by an embodiment of the present application.
  • an embodiment of the present application may provide a method for controlling an electronic device as shown in FIG. 3( b ), and the execution subject of the method for controlling an electronic device provided by an embodiment of the present application may be the electronic device mentioned above , the method for controlling an electronic device provided by the embodiment of the present application may include:
  • step 710 the input voltage of the BOB is obtained.
  • Step 720 Determine whether the input voltage satisfies the condition of V IN ⁇ V BOB / ⁇ .
  • Step 730 when the input voltage satisfies V IN ⁇ V BOB /n, stop the BOB from working, and turn on a pair of reverse N-channel MOSFETs around the BOB.
  • the method for controlling an electronic device may further include: step 740, when the input voltage does not satisfy V IN ⁇ V BOB /n, turning off a pair of reversed N-channels on the periphery of the BOB MOSFET, and make the BOB work properly.
  • the input voltage of BOB is obtained; it is determined whether the input voltage satisfies the condition of V IN ⁇ V BOB / ⁇ ; when the input voltage satisfies the condition of V IN ⁇ V BOB / ⁇ when the BOB is switched to a power saving working state.
  • the conversion efficiency of the BOB path is less than or equal to the conversion efficiency of the LDO path, and the BOB path can be switched to an equivalent LDO path by controlling the BOB path, specifically: stop the BOB from working, and conduct the BOB path.
  • This embodiment of the present application may provide a method for controlling an electronic device as shown in FIG. 4( a ).
  • the execution subject of the method for controlling an electronic device provided by the embodiment of the present application may be the above-mentioned electronic device.
  • the method for controlling an electronic device provided by the example may include: obtaining the input voltage of the BOB; obtaining the values of V SET , the output current and ⁇ of the BOB; determining whether the input voltage satisfies the condition of V IN ⁇ V BOB / ⁇ ; When the voltage satisfies V IN ⁇ V BOB /n, switching the BOB to a power-saving working state; wherein, switching the BOB to the power-saving working state includes: switching the BOB to a bypass mode, and Turn on an N-channel MOSFET on the periphery of the BOB; or, switch the BOB to a bypass mode, and turn off an N-channel MOSFET on the periphery of the BOB.
  • the method for controlling an electronic device provided by the embodiment of the present application further includes: when the input voltage does not satisfy V IN ⁇ V BOB / ⁇ , turning off an N-channel MOSFET on the periphery of the BOB, and making the BOB work normally.
  • the input voltage of BOB is obtained; it is determined whether the input voltage satisfies the condition of V IN ⁇ V BOB / ⁇ ; when the input voltage satisfies the condition of V IN ⁇ V BOB / ⁇ When the BOB is switched to the power saving working state.
  • the conversion efficiency of the BOB path is less than or equal to the conversion efficiency of the LDO path
  • the BOB path can be switched to an equivalent LDO path by controlling the BOB path, specifically: switching the BOB to the bypass mode , and turn off an N-channel MOSFET on the periphery of the BOB; or, switch the BOB to bypass mode and turn on an N-channel MOSFET on the periphery of the BOB to bypass the BOB to improve the conversion efficiency of the BOB path.
  • Reduce part of the power consumption of BOB to achieve the effect of power saving.
  • FIG. 8 is a schematic diagram of a method for controlling an electronic device provided by an embodiment of the present application.
  • an embodiment of the present application may provide a method for controlling an electronic device as shown in FIG. 4( b ).
  • the executive body of the provided method for controlling an electronic device may be the electronic device mentioned above, and the method for controlling an electronic device provided by the embodiments of the present application may include:
  • Step 810 Obtain the input voltage V IN of the BOB.
  • Step 820 Obtain the values of V SET , output current and ⁇ of the BOB.
  • Step 830 Determine whether the input voltage satisfies the condition of V IN ⁇ V BOB / ⁇ .
  • the BOB When the input voltage satisfies V IN ⁇ V BOB /n, the BOB is switched to a bypass mode, and a pair of reverse N-channel MOSFETs around the BOB are turned on.
  • the method for controlling an electronic device further includes: step 840, when the input voltage does not satisfy V IN ⁇ V BOB /n, turning off a pair of reverse N-channel MOSFETs on the periphery of the BOB, and making the BOB normal Work.
  • the input voltage of BOB is obtained; it is determined whether the input voltage satisfies the condition of V IN ⁇ V BOB / ⁇ ; when the input voltage satisfies the condition of V IN ⁇ V BOB / ⁇ when the BOB is switched to a power saving working state.
  • the conversion efficiency of the BOB path is less than or equal to the conversion efficiency of the LDO path, and the BOB path can be switched to an equivalent LDO path by controlling the BOB path, specifically: switching the BOB to the bypass mode , and turn on a pair of reverse N-channel MOSFETs on the periphery of the BOB, which can reduce part of the power consumption of the BOB and achieve the effect of power saving.
  • the working principle of BOB switching to bypass mode is: switch K1 and switch K4 inside the BOB chip are turned on, switch K2 and switch K3 are not turned on, and the current can be led from V IN The pin enters, flows through the switch K1, the inductor L, and the switch K4, and flows out from the V OUT pin.
  • V IN V SET
  • V BOB V SET
  • the operation of the BOB switches to the bypass mode.
  • the working current of the BOB flows through the switch K1 , the inductor L and the switch K4 as shown in FIG. 5 .
  • power loss I*I*R.
  • I is the output current of the BOB
  • R is the sum of the on-resistance of the three components of the switch K1, the inductor L, and the switch K4 inside the BOB power supply (refer to the TPS63027 chip specification, the switch K1, the inductor L, and the switch K4).
  • a switching element is added at the periphery of the BOB chip, and the on-resistance of the switching element is less than the on-resistance of the internal on-resistance of the BOB power supply in the bypass mode of the BOB. And, by controlling the conduction of the switching element to reduce the on-resistance of the BOB power supply in the bypass mode of the BOB, part of the power consumption of the BOB can be saved.
  • FIG. 9 is a schematic diagram of a method for controlling an electronic device provided by an embodiment of the present application, and the method for controlling an electronic device provided by an embodiment of the present application include:
  • Step 910 Obtain the input voltage of the BOB.
  • Step 920 Determine whether the input voltage satisfies a preset condition.
  • Step 930 When the input voltage satisfies the preset condition, switch the BOB to a power saving working state.
  • the obtaining the input voltage of the BOB includes: obtaining the input voltage of the BOB from the BOB; the determining whether the input voltage satisfies a preset condition includes: determining whether the input voltage is equal to the actual output of the BOB by the BOB voltage; for example, after obtaining the input voltage V IN of the BOB, determine whether the input voltage V IN of the BOB is equal to the actual output voltage V BOB of the BOB .
  • the switching of the BOB to a power-saving working state includes: stopping the BOB from working and turning on the switching element; or switching the BOB to a bypass mode and turning on the switching element .
  • the method for controlling an electronic device further includes: Step 940 : when the input voltage does not meet the preset condition, turn off the switch element and make the BOB work normally.
  • the method for controlling the above-mentioned electronic device by acquiring the input voltage of the BOB; determining whether the input voltage satisfies the preset condition; when the input voltage satisfies the preset condition, switching the BOB to save power working status.
  • switching elements are added at the periphery of the BOB. Since the switching elements at the periphery of the BOB are not affected by the packaging of the BOB chip, the on-resistance of the switching elements can be very low (selectable within 10m ⁇ , for example, the conduction of the switching elements impedance is 10m ⁇ ).
  • the bypass mode of BOB is switched to the operation of the peripheral switching elements, or, the bypass mode of the BOB and the peripheral switching elements work at the same time, because the on-resistance of the peripheral switching elements is smaller than that of the internal BOB in the bypass mode.
  • the sum of the on-resistance (10m ⁇ is obviously much smaller than 111m ⁇ ) reduces the on-resistance in the BOB bypass mode, which can save part of the power consumption of the BOB and achieve the effect of power saving.
  • An embodiment of the present application provides a method for controlling an electronic device as shown in FIG. 2( a ).
  • the method for controlling an electronic device provided by an embodiment of the present application includes: acquiring the input voltage of the BOB; determining whether the input voltage V IN of the BOB is equal to The actual output voltage V BOB of the BOB ; when the input voltage V IN is equal to the actual output voltage V BOB of the BOB, the BOB is switched to a power-saving working state.
  • the switching of the BOB to the power-saving working state includes: when the input voltage V IN is equal to the actual output voltage V BOB of the BOB, stopping the BOB and turning on the switching element; or, When the input voltage V IN is equal to the actual output voltage V BOB of the BOB, the BOB is switched to bypass mode and the switching element is turned on.
  • the first power-saving working state is: stop the BOB from working and turn on the switching element.
  • the second power-saving working state is: switching the BOB to a bypass mode and turning on the switching element. Since the on-resistance of the switching element is smaller than the sum of the internal on-resistances in the BOB bypass mode, the on-resistance of the BOB power supply in the first power saving working state is smaller than the on-resistance of the BOB power supply bypass mode.
  • the on-resistance of the BOB power supply is the on-resistance of the switching element and the internal on-resistance in the BOB bypass mode. The on-resistance of the BOB power supply in the electrical working state is smaller, which further reduces the on-resistance in the BOB bypass mode.
  • the method for controlling an electronic device further includes: when the input voltage V IN of the BOB is not equal to the actual output voltage V BOB of the BOB, turning off the switching element and making the BOB work normally.
  • V BOB V BOB
  • the above-mentioned method for controlling the electronic device shown in FIG. 2( a ) provided in the embodiment of the present application can also be applied to the electronic device shown in FIG. 3 ( a ) and FIG. 3 ( b ), for example, the embodiment of the present application
  • a method for controlling an electronic device as shown in FIG. 3( a ) is also provided.
  • the method for controlling an electronic device provided by an embodiment of the present application includes: acquiring the input voltage of the BOB; determining whether the input voltage V IN of the BOB is equal to the BOB The actual output voltage V BOB ; when the input voltage V IN is equal to the actual output voltage V BOB of the BOB, the BOB is switched to a power-saving working state.
  • the switching of the BOB to the power-saving working state includes: when the input voltage V IN is equal to the actual output voltage V BOB of the BOB, the BOB is stopped from working, and an N-channel peripheral of the BOB is turned on. MOSFET; or, when the input voltage V IN is equal to the actual output voltage V BOB of the BOB, the BOB is switched to the bypass mode, and an N-channel MOSFET around the BOB is turned on.
  • the first power saving working state is: stop the BOB from working, and turn on an N-channel MOSFET on the periphery of the BOB.
  • the second power-saving working state is: switching the BOB to the bypass mode, and turning on an N-channel MOSFET on the periphery of the BOB. Since the on-resistance of an N-channel MOSFET on the periphery of the BOB is less than the sum of the internal on-resistances in the BOB bypass mode, the on-resistance of the BOB power supply in the first power-saving working state is smaller than that in the BOB power supply bypass mode. impedance.
  • the on-resistance of the BOB power supply is the on-resistance of an N-channel MOSFET on the periphery of the BOB and the internal on-resistance in the BOB bypass mode.
  • the on-resistance is smaller than the on-resistance of the BOB power supply in the first power-saving working state, which further reduces the on-resistance in the BOB bypass mode.
  • the method for controlling an electronic device further includes: when the input voltage V IN of the BOB is not equal to the actual output voltage V BOB of the BOB, turning off an N-channel MOSFET on the periphery of the BOB, and making the BOB normal Work.
  • V BOB V BOB
  • An embodiment of the present application provides a method for controlling an electronic device as shown in FIG. 2( b ).
  • the method for controlling an electronic device provided by the embodiment of the present application includes: acquiring the input voltage of the BOB; determining whether the input voltage V IN of the BOB is equal to The actual output voltage V BOB of the BOB ; when the input voltage V IN is equal to the actual output voltage V BOB of the BOB, the BOB is switched to a power-saving working state.
  • the switching of the BOB to a power-saving working state includes: switching the BOB to a bypass mode, and turning on the switching element.
  • the third power saving working state is: switching the BOB to the bypass mode and turning on the switching element. Since the on-resistance of the switching element is smaller than the on-resistance of the inductance inside the BOB power supply in the bypass mode (for example, 10m ⁇ is obviously less than 30m ⁇ ), the on-resistance of the BOB power supply in the third power-saving working state is smaller than that of the BOB side On-resistance in circuit mode.
  • the method for controlling an electronic device further includes: when the input voltage V IN of the BOB is not equal to the actual output voltage V BOB of the BOB, turning off the switching element and making the BOB work normally.
  • V BOB V BOB

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Abstract

本申请公开了一种电子设备及其控制方法，涉及电子技术领域。所述电子设备包括：CPU、降压-升压转换器BOB、电感、开关元件，所述CPU分别与所述BOB和所述开关元件连接，所述BOB具有至少两对引脚，所述至少两对引脚中的第一对引脚分别连接所述电感的两端，所述至少两对引脚中的第二对引脚分别连接所述开关元件的两端；在所述BOB的输入电压小于或等于电压阈值，或者所述BOB的输入电压等于所述BOB的实际输出电压的情况下，导通所述开关元件；其中，所述电压阈值等于所述BOB的实际输出电压/η，其中，η为BOB的转换效率。

Description

一种电子设备及其控制方法
交叉引用
本发明要求在2021年1月27日提交中国专利局、申请号为202110111785.X、发明名称为“一种电子设备及其控制方法”的中国专利申请的优先权，该申请的全部内容通过引用结合在本发明中。
技术领域
本申请属于电子技术领域，具体涉及一种电子设备及其控制方法。
背景技术
电子设备中经常使用降压-升压转换器(Buck or Boost，BOB)电源(包括BOB和电感)向诸如低压差线性稳压器(low dropout regulator，LDO)等模块供电。在BOB电源供电的过程中常常会涉及切换BOB电源的工作模式。
现有技术会根据BOB电源的实际输入电压和配置的输出电压之间的大小关系来切换BOB电源的工作模式。
在实现本申请过程中，申请人发现现有技术中至少存在如下问题：在切换BOB电源工作模式的过程中并没有考虑到功耗，会存在电量耗损严重的问题。
发明内容
本申请旨在提供一种电子设备及其控制方法，至少解决现有技术中在切换BOB电源工作模式的过程中并没有考虑到功耗，会存在电量耗损严重的问题。
为了解决上述技术问题，本申请是这样实现的：
第一方面，本申请实施例提供了一种电子设备，包括：CPU、降压-升压转换器BOB、电感、开关元件，所述CPU分别与所述BOB和所述开关元件连接，所述BOB具有至少两对引脚，所述至少两对引脚中的第一对引脚分别连接所述电感的两端，所述至少两对引脚中的第二对引脚分别连接所述开关元件的两端；在所述BOB的输入电压小于或等于电压阈值，或者所述BOB的输入电压等于所述BOB的实际输出电压的情况下，导通所述开关元件；其中，所述电压阈值等于所述BOB的实际输出电压/η，其中，η为BOB的转换效率。
第二方面，本申请实施例提供了一种控制上面所描述的电子设备的方法，包括：获取BOB的输入电压；确定所述输入电压是否满足预设条件，所述预设条件包括：所述BOB的输入电压小于或等于电压阈值，或者所述BOB的输入电压等于所述BOB的实际输出电压；其中，所述电压阈值等于所述BOB的实际输出电压/η，其中，η为BOB的转换效率；在所述输入电压满足所述预设条件时，导通所述开关元件。
在本申请的实施例中，通过在电子设备中增设开关元件，所述开关元件连接CPU，并且利用BOB的至少两对引脚中的第二对引脚分别连接所述开关元件的两端；在所述BOB的输入电压小于或等于电压阈值，或者所述BOB的输入电压等于所述BOB的实际输出电压的情况下，导通开关元件。如此，在BOB的输入电压小于或等于电压阈值的情况下，导通开关元件，可提高BOB通路的转换效率，可减少BOB的一部分功耗；或者，在BOB的输入电压等于所述BOB的实际输出电压的情况下，通过导通开关元件，与相关技术中BOB处于旁路模式下相比，减小BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。
本申请的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本申请的实践了解到。
附图说明
本申请的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中：
图1是本申请实施例提供一种电子设备的结构框图；
图2(a)是本申请另一实施例提供一种电子设备的结构框图；
图2(b)是本申请另一实施例提供一种电子设备的结构框图；
图3(a)是本申请另一实施例提供一种电子设备的示意性原理图；
图3(b)是本申请另一实施例提供一种电子设备的示意性原理图；
图4(a)是本申请另一实施例提供一种电子设备的示意性原理图；
图4(b)是本申请另一实施例提供一种电子设备的示意性原理图；
图5是本申请实施例提供一种电子设备中的BOB电源的示意性原理图；
图6是本申请实施例提供的一种电子设备的控制方法的示意图；
图7是本申请实施例提供的一种电子设备的控制方法的示意图；
图8是本申请实施例提供的一种电子设备的控制方法的示意图；
图9是本申请实施例提供的一种电子设备的控制方法的示意图。
具体实施方式
下面将详细描述本申请的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本申请，而不能理解为对本申请的限制。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
本申请的说明书和权利要求书中的术语“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。此外，说明书以及权利要求中“和/ 或”表示所连接对象的至少其中之一。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“相连”、“连接”应做广义理解，例如，可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
本申请实施例中的电子设备可以为手机、ipad、智能手表、智能眼镜等移动终端，此处不做具体限制。目前，电子设备中的BOB可根据BOB实际的输入电压V IN和BOB配置的输出电压V SET的大小关系，来无缝切换BOB的3种工作模式：降压模式、升压模式、旁路模式，使得BOB能够在整个输入电压范围内调节输出电压。
具体地，通过比较BOB实际的输入电压V IN和BOB配置的输出电压V SET的大小，来无缝切换BOB的以下3种工作模式：
当V IN>V SET,V BOB＝V SET时，BOB切换到降压模式。
当V IN<V SET,V BOB＝V SET时，BOB切换到升压模式。
当V IN＝V SET,V BOB＝V SET时，BOB切换到旁路模式。
其中，V IN为BOB实际的输入电压；V SET为BOB配置的输出电压；V BOB为BOB实际的输出电压。BOB配置的输出电压一般等于BOB实际的输出电压。
同时，在BOB工作模式的切换过程中还可考虑BOB的转换效率η。其中，BOB的转换效率η为BOB的输出功率/BOB的输入功率，在不同的输入电压和不同的输出电流下，BOB的转换效率η并非固定的常数值，若BOB的转换效率η小，则说明BOB的无效损耗的电量多。
电子设备中的BOB电源可用于给其它模块供电，例如，LDO模块、闪存(flash)模块等。在图1中，BOB电源的右端可串联LDO模块(图1未示出)。也就是说，在电子设备中的BOB电源用于给LDO模块供电时，BOB电源的输出电压为LDO模块的输入电压。
其中，LDO模块的工作模式一般为降压模式，也就是说，LDO的输 出电压一般可小于输入电压。例如，在BOB电源的输出电压作为LDO模块的输入电压时，BOB电源的输出电压一般最小可为3.45V、3.65V，即LDO模块的输入电压一般最小可为3.45V、3.65V。在LDO模块工作在降压模式时，LDO模块的输出电压一般可为1.8V、2.8V、3.0V、3.3V等。
本申请实施例提供的电子设备及其控制方法可提高BOB通路的转换效率。具体地，举例而言，本申请实施例可通过比较BOB通路转换效率与LDO通路转换效率的大小，在满足BOB通路转换效率小于等于LDO通路转换效率的条件时，将BOB通路切换到等效的LDO通路上，可以提高BOB通路的转换效率，减少BOB的一部分功耗，达到省电的目的。
其中，LDO通路的转换效率为LDO模块的输出功率/LDO模块的输入功率，由于单独的LDO通路的输入电流与输出电流可近似相等，LDO通路的转换效率为LDO模块的输出电压/LDO模块的输入电压。即，LDO通路转换效率＝V OUT/V IN。其中，V OUT为LDO模块的输出电压，V IN为LDO模块的输入电压。
需要指出的是，本申请实施例中提及的BOB通路可以为包括了BOB和其所供电的模块(例如，LDO模块)的通路，V IN也可为表示BOB的输入电压。需了解的是，下文的描述中仅是以BOB通路包括BOB和LDO模块的通路为例进行阐释，并不意为限制。
其中，由于BOB的右端可串联LDO模块，BOB通路的转换效率可以为BOB通路的输出功率/BOB通路的输入功率。具体地，由于BOB为LDO模块供电，电流从BOB流入、由LDO模块流出。在包括了BOB和LDO模块的BOB通路中，可以将BOB的输入功率作为BOB通路的输入功率，可以将LDO模块的输出功率作为BOB通路的输出功率。据此，BOB通路的转换效率可以为LDO模块的输出功率/BOB的输入功率。
由于BOB与LDO模块串联，BOB的输出电压等于LDO模块的输入电压，BOB的输出电流等于LDO模块的输入电流，即，BOB的输出功率等于LDO模块的输入功率。BOB通路的转换效率可以进一步扩展为(LDO 模块的输出功率/LDO模块的输入功率)*(BOB的输出功率/BOB的输入功率)。
进一步地，BOB的转换效率(即，BOB的输出功率/BOB的输入功率)一般可以设为η。且LDO模块的输入电流等于BOB的输出电流，LDO模块的输入电流与LDO模块的输出电流可近似相等，上述BOB通路的转换效率进一步化简为(LDO模块的输出电压/LDO模块的输入电压)*BOB的转换效率。即，BOB通路转换效率＝(V OUT/V BOB)*η。其中，V OUT为LDO模块的输出电压，V BOB为BOB的输出电压。
基于BOB通路转换效率≤LDO通路转换效率条件，可以等效得出：(V OUT/V BOB)*η≤V OUT/V IN，化简为：V IN≤V BOB/η。
由以上内容可知，在满足V IN≤V BOB/η条件时，BOB通路转换效率小于等于LDO通路转换效率。此时，由于BOB通路转换效率小于等于LDO通路转换效率，将BOB通路切换为等效的LDO通路，等效的LDO通路指仅包含LDO模块的通路，可提高BOB通路的转换效率，进而减小BOB的一部分功耗。
本申请实施例提供一种电子设备及其控制方法，能够通过获取电子设备的BOB的输入电压，在所述输入电压满足V IN≤V BOB/η条件的情况下，将BOB旁路，以将BOB通路切换为等效的LDO通路，可提高BOB通路的转换效率，减小BOB的一部分功耗。
另一方面，本申请实施例提出另一种减小BOB电源的功耗的方式。具体地，本申请实施例还可以通过导通所述开关元件，进一步减小BOB电源的导通阻抗，进一步减小BOB的一部分功耗。
下面结合附图具体描述本申请实施例的电子设备及其控制方法。
本申请实施例提供一种电子设备，如图1所示，所述电子设备包括：中央处理器(CPU)、BOB电源和开关元件，所述BOB电源包括BOB和电感，所述CPU分别与所述BOB和所述开关元件连接，所述BOB与所述开关元件连接。所述BOB具有至少两对引脚，所述至少两对引脚中的 第一对引脚分别连接所述电感的两端；所述至少两对引脚中的第二对引脚或所述第一对引脚分别连接所述开关元件的两端；在所述BOB的输入电压小于或等于电压阈值的情况下，将所述BOB切换到旁路模式；其中，所述电压阈值等于所述BOB的实际输出电压/η，其中，η为所述BOB的转换效率。
在本申请的实施例中，通过在电子设备中增设开关元件，所述开关元件连接CPU，并且利用BOB的至少两对引脚中的第二对引脚或第一对引脚分别连接所述开关元件的两端，在所述BOB的输入电压小于或等于电压阈值的情况下，将所述BOB切换到旁路模式；其中，所述电压阈值等于所述BOB的实际输出电压/η，其中，η为所述BOB的转换效率，如此，在BOB的输入电压小于或等于BOB的实际输出电压/η的情况下，BOB通路转换效率小于等于LDO通路转换效率，将BOB通路切换为等效的LDO通路，具体将BOB切换到旁路模式，可提高BOB通路的转换效率，从而可减少BOB的一部分功耗，达到省电的效果。
在本申请实施例中，如图1所示的电子设备中的BOB电源的示意性原理图可参照图5。所述BOB电源包括BOB和电感，所述BOB可以是一种封装好的BOB芯片，图5所示虚线部分的框图为BOB芯片的一种示意性原理图，此外，本申请实施例不对BOB芯片的具体结构进行限定。如图5所示的BOB芯片可包括：L1引脚、L2引脚、VIN引脚、VOUT引脚；L1引脚、L2引脚一般用于接入电感L；BOB芯片内部可具有4个开关：K1、K2、K3、K4，这4个开关协同工作，用于控制输入电流在芯片内部的流向，以实现升压、降压功能。
此外，在V IN＝V SET,V BOB＝V SET时，BOB芯片还可以实现旁路功能。在BOB芯片中，BOB切换到旁路模式的工作原理为：BOB芯片内部的开关K1和开关K4导通、开关K2和开关K3不导通，电流可从V IN引脚进入，流经开关K1、电感L、开关K4，从V OUT引脚流出。
可选地，如图2(a)所示，在本申请实施例提供的电子设备中，第二 对引脚可包括第一电压引脚和第二电压引脚；所述第一电压引脚可为图2(a)所示的VIN引脚，所述第二电压引脚可为图2(a)所示VOUT引脚，所述VIN引脚和所述VOUT引脚可分别连接所述开关元件的两端；在所述BOB的输入电压小于或等于电压阈值，或者所述BOB的输入电压等于所述BOB的实际输出电压的情况下，导通所述开关元件；其中，所述电压阈值等于所述BOB的实际输出电压/η，其中，η为BOB的转换效率。
需要指出的是，开关元件的导通阻抗可以做得很低(例如2mΩ)，开关元件的导通阻抗低于相关技术中BOB处于旁路模式下BOB电源的导通阻抗。
在本申请的实施例中，通过在电子设备中增设开关元件，所述开关元件连接CPU，并且利用BOB的第一电压引脚和第二电压引脚分别连接所述开关元件的两端，在所述BOB的输入电压小于或等于电压阈值，或者所述BOB的输入电压等于所述BOB的实际输出电压的情况下，导通所述开关元件。如此，在BOB的输入电压小于或等于电压阈值的情况下，导通所述开关元件，可提高BOB通路的转换效率，从而可减少BOB的一部分功耗；或者，在BOB的输入电压等于所述BOB的实际输出电压的情况下，通过导通开关元件，与相关技术中BOB处于旁路模式下相比，减小了BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。
可选地，如图2(b)所示，在本申请实施例提供的电子设备中，所述第一对引脚可包括第一电感引脚和第二电感引脚；所述第一电感引脚可为图2(b)所示的L1引脚，所述第二电感引脚可为图2(b)所示L2引脚，所述L1引脚和所述L2引脚可分别连接所述开关元件的两端；在所述BOB的输入电压小于或等于电压阈值，或者所述BOB的输入电压等于所述BOB的实际输出电压的情况下，将所述BOB切换到旁路模式，并导通所述开关元件；其中，所述电压阈值等于所述BOB的实际输出电压/η，其中，η为BOB的转换效率。
在本申请的实施例中，通过在电子设备中增设开关元件，所述开关元件连接CPU，并且利用BOB的第一电感引脚和第二电感引脚分别连接所述开关元件的两端，在所述BOB的输入电压小于或等于电压阈值，或者所述BOB的输入电压等于所述BOB的实际输出电压的情况下，将所述BOB切换到旁路模式，并导通所述开关元件。如此，在BOB的输入电压小于或等于电压阈值的情况下，将BOB切换到旁路模式，并导通开关元件，以将BOB旁路，可提高BOB通路的转换效率，从而可减少BOB的一部分功耗；或者，在BOB的输入电压等于所述BOB的实际输出电压的情况下，通过将BOB切换到旁路模式，并导通开关元件，与相关技术中BOB处于旁路模式下相比，减小了BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。
可选地，在本申请实施例提供的电子设备中，所述开关元件可以是具有开关功能且导通阻抗低的元器件。例如，所述开关元件可包括金属-氧化物-半导体场效应晶体管(Metal-Oxide-Semiconductor Field-Effect Tran sistor，MOSFET)。其中，MOSFET的导通阻抗可以做得很低，例如2mΩ。所述开关元件也可包括其他的具有开关功能且导通阻抗低的普通开关，此处对开关元件的类型不做具体限定。
在本申请实施例中，MOSFET的数量可以是一个或多个。MOSFET的类型也可以是多种。例如，可以是N沟道MOSFET(N-channel MOSFET)，也可以是P沟道MOSFET(P-channel MOSFET)，本申请实施例对MOSFET的具体数量、具体类型不做限定。
例如，当所述开关元件包括一个MOSFET时，所述开关元件可以包括一个N沟道MOSFET；或者，所述开关元件可以包括一个P沟道MOSFET。
在本申请实施例中，可选择N沟道MOSFET或者P沟道MOSFET作为开关元件。N沟道MOSFET的导通阻抗一般可以做到2mΩ，N沟道MOSFET的导通阻抗一般比P沟道MOSFET的导通阻抗低，也就是说， 相比于P沟道MOSFET，N沟道MOSFET可以节省更多的能耗。同时，相比于N沟道MOSFET，在电子设备中，一般需要使用更高的电压去导通P沟道MOSFET，例如，可能需要额外设置一个高压电源去导通P沟道MOSFET，在使用便利性上，P沟道MOSFET也不如N沟道MOSFET方便。
又例如，当所述开关元件包括一对反向连接的MOSFET时，所述开关元件可以包括一对反向的N沟道MOSFET；或者，所述开关元件可以包括一对反向的P沟道MOSFET。
在本申请实施例中，一对反向连接的MOSFET(例如，一对反向的N沟道MOSFET，或者一对反向的P沟道MOSFET)比一个MOSFET的实用性更好。若开关元件是一个N沟道MOSFET，在BOB处于降压模式下，外置的开关元件(一个N沟道MOSFET)可能会因为N沟道MOSFET内部存在的体二极管出现漏电情况。而若开关元件是一对反向的N沟道MOSFET，在BOB处于降压模式下，由于一对N沟道MOSFET反向连接，两个MOSFET内部的体二极管方向也相反，不存在漏电风险，提高了电子设备的安全性。
可选地，在本申请实施例提供的电子设备中，所述开关元件包括MOSFET，所述MOSFET具有栅极、源极和漏极，所述栅极与所述CPU相连接，所述第二对引脚包括第一电压引脚和第二电压引脚，所述第一电压引脚和所述第二电压引脚分别连接所述MOSFET的源极和漏极。其中，CPU可以通过发送使能信号至MOSFET的栅极，控制MOSFET的导通。
在本申请的实施例中，通过在电子设备中增设MOSFET，所述MOSFET的栅极连接CPU，并且利用BOB的第一电压引脚和所述第二电压引脚分别连接所述MOSFET的源极和漏极，如此，可通过控制MOSFET的导通来减小BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。
在本申请实施例中，视MOSFET的类型而定，所述第一电压引脚和 所述第二电压引脚分别连接所述MOSFET的源极和漏极可包括以下两种情形：其一，所述第一电压引脚连接所述MOSFET的源极，所述第二电压引脚连接所述MOSFET的漏极；其二，所述第一电压引脚连接所述MOSFET的漏极，所述第二电压引脚连接所述MOSFET的源极。
在本申请实施例提供的电子设备中，如图3(a)所示，所述MOSFET可以为一个N沟道MOSFET。相应的，在此种情况下，所述VIN引脚可连接所述N沟道MOSFET的源极，所述VOUT引脚可连接N沟道MOSFET的漏极。其中，N沟道MOSFET的栅极可以连接所述中央处理器CPU(图未示出)。
在本申请的实施例中，通过在电子设备中增设N沟道MOSFET，所述N沟道MOSFET的栅极连接CPU，并且利用所述VIN引脚连接所述N沟道MOSFET的源极，所述VOUT引脚连接N沟道MOSFET的漏极，如此，可通过控制N沟道MOSFET的导通来减小BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。并且，在本申请的实施例中，相比于一个P沟道MOSFET，一个N沟道MOSFET的导通阻抗更低，可进一步减小电子设备的一部分功耗。
在本申请另一实施例提供的电子设备中，所述MOSFET可以为一个P沟道MOSFET。相应的，在此种情况下，所述VIN引脚连接P沟道MOSFET的漏极，所述VOUT引脚连接P沟道MOSFET的源极；P沟道MOSFET的栅极连接所述中央处理器CPU(图未示出)。
在本申请的实施例中，通过在电子设备中增设P沟道MOSFET，所述P沟道MOSFET的栅极连接CPU，并且利用所述VIN引脚连接P沟道MOSFET的漏极，所述VOUT引脚连接P沟道MOSFET的源极，如此，可通过控制P沟道MOSFET的导通来减小BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。
可选地，在本申请实施例提供的电子设备中，所述开关元件可包括一对反向连接的MOSFET，所述第二对引脚包括第一电压引脚和第二电压引 脚，所述第一电压引脚、所述一对反向连接的MOSFET和所述第二电压引脚依次串联连接。
在本申请的实施例中，通过在电子设备中增设一对反向连接的MOSFET，并且利用BOB的第二对引脚，所述第二对引脚包括第一电压引脚和第二电压引脚，所述第一电压引脚、所述一对反向连接的MOSFET和所述第二电压引脚依次串联连接，如此，可通过控制一对反向连接的MOSFET的导通来减小BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。
在本申请实施例中，视MOSFET的类型而定，所述第一电压引脚、所述一对反向连接的MOSFET和所述第二电压引脚依次串联连接可包括以下两种情形：其一，第一MOSFET和第二MOSFET均为N沟道MOSFET；第一MOSFET的漏极与第二MOSFET的漏极连接，第一MOSFET的源极连接所述第一电压引脚，第二MOSFET的源极连接所述第二电压引脚；其二，第一MOSFET和第二MOSFET均为P沟道MOSFET；第一MOSFET的源极与第二MOSFET的源极连接，第一MOSFET的漏极连接所述第一电压引脚，第二MOSFET的漏极连接所述第二电压引脚。
在本申请实施例提供的电子设备中，所述一对反向连接的MOSFET包括第一MOSFET和第二MOSFET。如图3(b)所示，第一MOSFET和第二MOSFET均为N沟道MOSFET；第一MOSFET的漏极与第二MOSFET的漏极连接，第一MOSFET的源极连接所述VIN引脚，第二MOSFET的源极连接所述VOUT引脚。其中，第一MOSFET的栅极和第二MOSFET的栅极均连接所述CPU(图未示出)。
在本申请的实施例中，通过在电子设备中增设一对反向连接的N沟道MOSFET，所述N沟道MOSFET的栅极连接CPU，并利用第一MOSFET的漏极与第二MOSFET的漏极连接，第一MOSFET的源极连接所述VIN引脚，第二MOSFET的源极连接所述VOUT引脚，如此，可通过控制一对反向连接的N沟道MOSFET的导通来减小BOB电源的导通阻抗，从而 可减少BOB的一部分功耗，达到省电的效果。并且，在本申请的实施例中，相比于一对反向连接的P沟道MOSFET，一对反向连接的N沟道MOSFET的导通阻抗更低，可进一步减小电子设备的一部分功耗。相比于一个N沟道MOSFET，一对反向连接的N沟道MOSFET内部的两个体二极管方向也相反，电子设备不存在漏电风险，提高了电子设备的安全性。
在本申请另一实施例提供的电子设备中，所述一对反向连接的MOSFET包括第一MOSFET和第二MOSFET。第一MOSFET和第二MOSFET均为P沟道MOSFET；第一MOSFET的源极与第二MOSFET的源极连接，第一MOSFET的漏极连接所述第一电压引脚，第二MOSFET的漏极连接所述第二电压引脚，第一MOSFET的栅极和第二MOSFET的栅极均连接所述CPU(图未示出)。
在本申请的实施例中，通过在电子设备中增设一对反向连接的P沟道MOSFET，一对反向连接的P沟道MOSFET的栅极连接CPU，并利用第一MOSFET的源极与第二MOSFET的源极连接，第一MOSFET的漏极连接所述VIN引脚，第二MOSFET的漏极连接所述VOUT引脚，如此，可通过控制一对反向连接的P沟道MOSFET的导通来减小BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。并且，在本申请的实施例中，相比于一个P沟道MOSFET，一对反向连接的P沟道MOSFET内部的两个体二极管方向也相反，电子设备不存在漏电风险，提高了电子设备的安全性。
在本申请实施例提供的电子设备中，除了可以如上文所描述，采用包括第一电压引脚和第二电压引脚的第二对引脚分别连接所述开关元件之外，还可以采用包括第一电感引脚和第二电感引脚的第一对引脚分别连接所述开关元件。
在本申请提供的电子设备的一个实施例中，所述开关元件包括MOSFET，所述MOSFET具有栅极、源极和漏极，所述栅极与所述CPU相连接，所述第一对引脚包括第一电感引脚和第二电感引脚，所述第一电 感引脚和所述第二电感引脚分别连接所述MOSFET的源极和漏极。
在本申请的实施例中，通过在电子设备中增设MOSFET，所述MOSFET的栅极连接CPU，并且利用BOB的第一电感引脚和所述第二电感引脚分别连接所述MOSFET的源极和漏极，如此，可通过控制MOSFET的导通来减小BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。
在本申请实施例中，视MOSFET的类型而定，所述第一电感引脚和所述第二电感引脚分别连接所述MOSFET的源极和漏极可包括以下两种情形：其一，所述第一电感引脚连接所述MOSFET的源极，所述第二电感引脚连接所述MOSFET的漏极；其二，所述第一电感引脚连接所述MOSFET的漏极，所述第二电感引脚连接所述MOSFET的源极。
在本申请实施例提供的电子设备中，可如图4(a)所示，所述MOSFET可以为一个N沟道MOSFET，相应的，在此种情况下，所述第一电感引脚和所述第二电感引脚分别连接所述MOSFET的源极和漏极可具体为：所述L1引脚连接所述N沟道MOSFET的源极，所述L2引脚连接N沟道MOSFET的漏极。其中，N沟道MOSFET的栅极连接所述中央处理器CPU(图未示出)。
在本申请的实施例中，通过在电子设备中增设N沟道MOSFET，所述N沟道MOSFET的栅极连接CPU，并且利用所述L1引脚连接所述N沟道MOSFET的源极，所述L2引脚连接N沟道MOSFET的漏极，如此，可通过控制N沟道MOSFET的导通来减小BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。并且，在本申请的实施例中，相比于一个P沟道MOSFET，一个N沟道MOSFET的导通阻抗更低，可进一步减小电子设备的一部分功耗。
在本申请另一实施例提供的电子设备中，所述MOSFET可以为一个P沟道MOSFET，相应的，在此种情况下，所述第一电感引脚和所述第二电感引脚分别连接所述MOSFET的源极和漏极可具体为：所述L1引脚连接 P沟道MOSFET的漏极，所述L2引脚连接P沟道MOSFET的源极；P沟道MOSFET的栅极连接所述中央处理器CPU(图未示出)。
在本申请的实施例中，通过在电子设备中增设P沟道MOSFET，所述P沟道MOSFET的栅极连接CPU，并且利用所述L1引脚连接P沟道MOSFET的漏极，所述L2引脚连接P沟道MOSFET的源极，如此，可通过控制P沟道MOSFET的导通来减小BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。
可选地，在本申请实施例提供的电子设备中，所述开关元件可包括一对反向连接的MOSFET，所述第一对引脚包括第一电感引脚和第二电感引脚，所述第一电感引脚、所述一对反向连接的MOSFET和所述第二电感引脚依次串联连接。
在本申请的实施例中，通过在电子设备中增设一对反向连接的MOSFET，并且利用BOB的第一对引脚，所述第一对引脚包括第一电感引脚和第二电感引脚，所述第一电感引脚、所述一对反向连接的MOSFET和所述第二电感引脚依次串联连接，如此，可通过控制一对反向连接的MOSFET的导通来减小BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。
在本申请实施例中，视MOSFET的类型而定，所述第一电感引脚、所述一对反向连接的MOSFET和所述第二电感引脚依次串联连接可包括以下两种情形：其一，第一MOSFET和第二MOSFET均为N沟道MOSFET；第一MOSFET的漏极与第二MOSFET的漏极连接，第一MOSFET的源极连接所述第一电感引脚，第二MOSFET的源极连接所述第二电感引脚；其二，第一MOSFET和第二MOSFET均为P沟道MOSFET；第一MOSFET的源极与第二MOSFET的源极连接，第一MOSFET的漏极连接所述第一电感引脚，第二MOSFET的漏极连接所述第二电感引脚。
在本申请实施例提供的电子设备中，所述一对反向连接的MOSFET包括第一MOSFET和第二MOSFET，如图4(b)所示，第一MOSFET和第 二MOSFET均为N沟道MOSFET；第一MOSFET的漏极与第二MOSFET的漏极连接，第一MOSFET的源极连接所述L1引脚，第二MOSFET的源极连接所述L2引脚。其中，第一MOSFET的栅极和第二MOSFET的栅极均连接所述CPU(图未示出)。
在本申请的实施例中，通过在电子设备中增设一对反向连接的N沟道MOSFET，所述N沟道MOSFET的栅极连接CPU，并利用第一MOSFET的漏极与第二MOSFET的漏极连接，第一MOSFET的源极连接所述L1引脚，第二MOSFET的源极连接所述L2引脚，如此，可通过控制一对反向连接的N沟道MOSFET的导通来减小BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。并且，在本申请的实施例中，相比于一对反向连接的P沟道MOSFET，一对反向连接的N沟道MOSFET的导通阻抗更低，可进一步减小电子设备的一部分功耗。相比于一个N沟道MOSFET，一对反向连接的N沟道MOSFET内部的两个体二极管方向也相反，电子设备不存在漏电风险，提高了电子设备的安全性。
在本申请另一施例提供的电子设备中，第一MOSFET和第二MOSFET均为P沟道MOSFET；第一MOSFET的源极与第二MOSFET的源极连接，第一MOSFET的漏极连接所述第一电感引脚，第二MOSFET的漏极连接所述第二电感引脚，第一MOSFET的栅极和第二MOSFET的栅极均连接所述CPU(图未示出)。
在本申请的实施例中，通过在电子设备中增设一对反向连接的P沟道MOSFET，一对反向连接的P沟道MOSFET的栅极连接CPU，并利用第一MOSFET的源极与第二MOSFET的源极连接，第一MOSFET的漏极连接所述L1引脚，第二MOSFET的漏极连接所述L2引脚，如此，可通过控制一对反向连接的P沟道MOSFET的导通来减小BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。并且，在本申请的实施例中，相比于一个P沟道MOSFET，一对反向连接的P沟道MOSFET内部的两个体二极管方向也相反，电子设备不存在漏电风险，提高了电子 设备的安全性。
本申请实施例提供的上述电子设备能够通过将BOB旁路，提高BOB通路的转换效率，减少了BOB的一部分功耗；同时通过导通开关元件，减小BOB电源的导通阻抗，减少了BOB的一部分功耗。
图6是本申请实施例提供的一种控制电子设备的方法的示意图。参照图6，本申请实施例可提供一种控制如图1所示的电子设备的方法，本申请实施例提供的控制电子设备的方法的执行主体可以为上文提到的电子设备，本申请实施例提供的控制电子设备的方法可包括：
步骤610，获取BOB的输入电压。
步骤620，确定所述输入电压是否满足预设条件。
步骤630，在所述输入电压满足所述预设条件时，将所述BOB切换到省电工作状态。
在本申请实施例提供的电子设备控制方法中，通过获取BOB的输入电压，并可在输入电压满足所述预设条件时，将所述BOB切换到省电工作状态。可实现省电工作状态的快速切换。
其中，在确定所述输入电压是否满足预设条件之前，本申请实施例提供的控制电子设备的方法还包括：获取BOB的配置输出电压V SET、输出电流和η的值；其中，确定所述输入电压是否满足预设条件，可包括：确定所述输入电压是否小于或等于电压阈值，所述电压阈值等于所述BOB的实际输出电压/η，其中，η为BOB的转换效率。
能够理解的是，在BOB的输入电压小于或等于电压阈值(即V IN≤V BOB/η)的情况下，LDO转换效率大于或等于BOB通路转换效率，此时使BOB旁路，可将BOB通路切换到等效的LDO通路，可提高BOB通路转换效率，减小BOB的一部分功耗。
其中，所述将所述BOB切换到省电工作状态，包括：将所述BOB切换到旁路模式，并关闭所述开关元件；或者，将所述BOB切换到旁路模式，并导通所述开关元件。
能够理解的是，上述两种切换方式均可使BOB旁路(即将BOB通路切换到等效的LDO通路)，提高BOB通路转换效率，减小BOB的一部分功耗；并且，在将BOB切换到旁路模式的同时导通开关元件，可进一步减小BOB电源的导通阻抗，从而可减少BOB的一部分功耗。
此外，本申请实施例提供的控制电子设备的方法还包括：步骤640，在输入电压大于电压阈值的情况下，关闭所述开关元件，并使BOB正常工作。
其中，BOB正常工作是指前文提到的通过比较BOB实际的输入电压V IN和BOB配置的输出电压V SET的大小，来无缝切换BOB的3种工作模式，以下不再赘述。
根据本申请的实施例提供的控制上述电子设备的方法，通过获取BOB的输入电压；确定输入电压是否满足预设条件；在输入电压满足所述预设条件时，将所述BOB切换到省电工作状态。如此，在输入电压满足预设条件的情况下，BOB通路转换效率小于等于LDO通路转换效率，可通过将所述BOB切换到旁路模式，以控制BOB通路切换为等效的LDO通路，减少BOB的一部分功耗，达到省电的效果。
此外，在将所述BOB切换到旁路模式的情况下进一步导通所述开关元件，可减小BOB处于旁路模式下的BOB电源的导通阻抗，从而可进一步减少BOB的一部分功耗。
需要指出的是，本申请实施例提供的如图6所示的控制电子设备的方法，还可应用于如图2(a)、图2(b)、图3(a)、图3(b)、图4(a)、图4(b)所示的电子设备。
本申请实施例可提供一种控制如图2(a)所示的电子设备的方法，本申请实施例提供的控制电子设备的方法的执行主体可以为上文提到的电子设备，本申请实施例提供的控制电子设备的方法可包括：获取BOB的输入电压；确定所述输入电压是否满足预设条件，所述预设条件包括：所述BOB的输入电压小于或等于电压阈值，或者所述BOB的输入电压等于 所述BOB的实际输出电压；其中，所述电压阈值等于所述BOB的实际输出电压/η，其中，η为BOB的转换效率；在所述输入电压满足所述预设条件时，导通所述开关元件。
需要指出的是，开关元件的导通阻抗可以做得很低(例如2mΩ)，可低于相关技术中BOB处于旁路模式下BOB电源的导通阻抗。
本申请实施例提供的电子设备，通过获取BOB的输入电压；确定所述输入电压是否满足预设条件，在所述输入电压满足所述预设条件时，导通所述开关元件，如此，在BOB的输入电压小于或等于电压阈值的情况下，导通所述开关元件，可提高BOB通路的转换效率，从而可减少BOB的一部分功耗；或者，在BOB的输入电压等于所述BOB的实际输出电压的情况下，通过导通开关元件，与相关技术中BOB处于旁路模式下相比，减小了BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。
其中，在确定所述输入电压是否满足预设条件之前，本申请实施例提供的控制电子设备的方法还包括：获取BOB的V SET、输出电流和η的值。其中，在所述输入电压满足所述预设条件时，导通所述开关元件，包括：在所述BOB的输入电压小于或等于所述电压阈值的情况下，使所述BOB停止工作，并导通所述开关元件；或者，在所述BOB的输入电压小于或等于电压阈值，或者所述BOB的输入电压等于所述BOB的实际输出电压的情况下，将所述BOB切换到旁路模式，并导通所述开关元件。
此外，本申请实施例提供的控制电子设备的方法还包括：在所述输入电压不满足预设条件时，关闭所述开关元件，并使BOB正常工作。
根据本申请的实施例提供的控制上述电子设备的方法，通过获取BOB的V SET、输出电流和η的值，在BOB的输入电压小于或等于电压阈值的情况下，使BOB停止工作并导通开关元件，可提高BOB通路的转换效率，从而可减少BOB的一部分功耗；或者，在BOB的输入电压等于BOB的实际输出电压的情况下，通过将BOB切换到旁路模式并导通开关元件， 与相关技术中BOB处于旁路模式下相比，减小了BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。
本申请实施例可提供一种控制如图2(b)所示的电子设备的方法，本申请实施例提供的控制电子设备的方法的执行主体可以为上文提到的电子设备，本申请实施例提供的控制电子设备的方法可包括：获取BOB的输入电压V IN；确定所述输入电压是否满足预设条件，所述预设条件包括：所述BOB的输入电压小于或等于电压阈值，或者所述BOB的输入电压等于所述BOB的实际输出电压；其中，所述电压阈值等于所述BOB的实际输出电压/η，其中，η为BOB的转换效率；在所述输入电压满足所述预设条件时，将所述BOB切换到旁路模式，并导通所述开关元件。
其中，在确定所述输入电压是否满足预设条件之前，本申请实施例提供的控制电子设备的方法还包括：获取BOB的V SET、输出电流和η的值。
根据本申请实施例提供的控制如图2(b)所示的电子设备的方法，通过获取BOB的输入电压V IN；确定输入电压是否满足预设条件；在输入电压满足所述预设条件时，将BOB切换到旁路模式并导通开关元件。如此，可在BOB的输入电压小于或等于电压阈值的情况下，将BOB切换到旁路模式并导通开关元件，以将BOB旁路，可提高BOB通路的转换效率，从而可减少BOB的一部分功耗；或者，在BOB的输入电压等于BOB的实际输出电压的情况下，通过将BOB切换到旁路模式并导通开关元件，与相关技术中BOB处于旁路模式下相比，减小了BOB电源的导通阻抗，从而可减少BOB的一部分功耗，达到省电的效果。
此外，本申请实施例提供的控制电子设备的方法还包括：在所述输入电压不满足预设条件时，关闭所述开关元件，并使BOB正常工作。
在另一个控制如图2(b)所示的电子设备的方法的具体实施例中，所述方法还包括：在BOB的输入电压小于或等于电压阈值的情况下，将所述BOB切换到旁路模式，并关闭所述开关元件。如此，可在BOB的输入电压小于或等于电压阈值的情况下，将BOB切换到旁路模式并关闭开 关元件，以将BOB旁路，可提高BOB通路的转换效率，从而可减少BOB的一部分功耗。
本申请实施例可提供一种控制如图3(a)所示的电子设备的方法，本申请实施例提供的控制电子设备的方法的执行主体可以为上文提到的电子设备，本申请实施例提供的控制电子设备的方法可包括：获取BOB的输入电压；确定所述输入电压是否满足V IN≤V BOB/η条件；在所述输入电压满足V IN≤V BOB/η时，将所述BOB切换到省电工作状态。
其中，在确定所述输入电压是否满足V IN≤V BOB/η条件之前，本申请实施例提供的控制电子设备的方法还包括：获取BOB的V SET、输出电流和η的值。
其中，所述将所述BOB切换到省电工作状态，包括：使所述BOB停止工作，并导通BOB外围的一个N沟道MOSFET；或者，将所述BOB切换到旁路模式，并导通所述BOB外围的一个N沟道MOSFET；或者，将所述BOB切换到旁路模式，并关闭所述BOB外围的一个N沟道MOSFET。
此外，本申请实施例提供的控制电子设备的方法还包括：在所述输入电压不满足V IN≤V BOB/η时，关闭所述BOB外围的N沟道MOSFET，并使BOB正常工作。
根据本申请的实施例提供的控制上述电子设备的方法，通过获取BOB的输入电压；确定所述输入电压是否满足V IN≤V BOB/η条件；在输入电压满足V IN≤V BOB/η条件时，将所述BOB切换到省电工作状态。如此，在BOB通路转换效率小于等于LDO通路转换效率时，可通过控制BOB通路切换为等效的LDO通路，具体为：将所述BOB切换到旁路模式，并关闭BOB外围的一个N沟道MOSFET；或者，使所述BOB停止工作，并导通BOB外围的一个N沟道MOSFET；或者，将所述BOB切换到旁路模式，并导通BOB外围的一个N沟道MOSFET，均可将BOB电源旁路以提高BOB通路的转换效率，减少BOB的一部分功耗，达到省电的效果。
图7是本申请实施例提供的一种控制电子设备的方法的示意图。参照图7，本申请实施例可提供一种控制如图3(b)所示的电子设备的方法，本申请实施例提供的控制电子设备的方法的执行主体可以为上文提到的电子设备，本申请实施例提供的控制电子设备的方法可包括：
步骤710，获取BOB的输入电压。
步骤720，确定所述输入电压是否满足V IN≤V BOB/η条件。
步骤730，在所述输入电压满足V IN≤V BOB/η时，使所述BOB停止工作，并导通BOB外围的一对反向的N沟道MOSFET。
此外，本申请实施例提供的控制电子设备的方法还可包括：步骤740，在所述输入电压不满足V IN≤V BOB/η时，关闭所述BOB外围的一对反向的N沟道MOSFET，并使BOB正常工作。
根据本申请的实施例提供的控制上述电子设备的方法，通过获取BOB的输入电压；确定所述输入电压是否满足V IN≤V BOB/η条件；在输入电压满足V IN≤V BOB/η条件时，将所述BOB切换到省电工作状态。如此，在满足V IN≤V BOB/η条件时，BOB通路转换效率小于等于LDO通路转换效率，可通过控制BOB通路切换为等效的LDO通路，具体为：使所述BOB停止工作，并导通BOB外围的一对反向的N沟道MOSFET；或者，将所述BOB切换到旁路模式，并导通BOB外围的一对反向的N沟道MOSFET，均可将BOB旁路以提高BOB通路的转换效率，减少BOB的一部分功耗，达到省电的效果。
本申请实施例可提供一种控制如图4(a)所示的电子设备的方法，本申请实施例提供的控制电子设备的方法的执行主体可以为上文提到的电子设备，本申请实施例提供的控制电子设备的方法可包括：获取BOB的输入电压；获取BOB的V SET、输出电流和η的值；确定所述输入电压是否满足V IN≤V BOB/η条件；在所述输入电压满足V IN≤V BOB/η时，将所述BOB切换到省电工作状态；其中，所述将所述BOB切换到省电工作状态，包括：将所述BOB切换到旁路模式，并导通BOB外围的一个N沟道MOSFET； 或者，将所述BOB切换到旁路模式，并关闭BOB外围的一个N沟道MOSFET。
本申请实施例提供的控制电子设备的方法还包括：在所述输入电压不满足V IN≤V BOB/η时，关闭BOB外围的一个N沟道MOSFET，并使BOB正常工作。
根据本申请的实施例提供的控制上述电子设备的方法，通过获取BOB的输入电压；确定所述输入电压是否满足V IN≤V BOB/η条件；在输入电压满足V IN≤V BOB/η条件时，将所述BOB切换到省电工作状态。如此，在满足V IN≤V BOB/η条件时，BOB通路转换效率小于等于LDO通路转换效率，可通过控制BOB通路切换为等效的LDO通路，具体为：将所述BOB切换到旁路模式，并关闭BOB外围的一个N沟道MOSFET；或者，将所述BOB切换到旁路模式，并导通BOB外围的一个N沟道MOSFET，均可将BOB旁路以提高BOB通路的转换效率，减少BOB的一部分功耗，达到省电的效果。
图8是本申请实施例提供的一种电子设备的控制方法的示意图，参照图8，本申请实施例可提供一种控制如图4(b)所示的电子设备的方法，本申请实施例提供的控制电子设备的方法的执行主体可以为上文提到的电子设备，本申请实施例提供的控制电子设备的方法可包括：
步骤810：获取BOB的输入电压V IN。
步骤820：获取BOB的V SET、输出电流和η的值。
步骤830：确定所述输入电压是否满足V IN≤V BOB/η条件。
在所述输入电压满足V IN≤V BOB/η时，将所述BOB切换到旁路模式，并导通BOB外围的一对反向的N沟道MOSFET。
本申请实施例提供的控制电子设备的方法还包括：步骤840在所述输入电压不满足V IN≤V BOB/η时，关闭BOB外围的一对反向的N沟道MOSFET，并使BOB正常工作。
根据本申请的实施例提供的控制上述电子设备的方法，通过获取BOB 的输入电压；确定所述输入电压是否满足V IN≤V BOB/η条件；在输入电压满足V IN≤V BOB/η条件时，将所述BOB切换到省电工作状态。如此，在满足V IN≤V BOB/η条件时，BOB通路转换效率小于等于LDO通路转换效率，可通过控制BOB通路切换为等效的LDO通路，具体为：将所述BOB切换到旁路模式，并导通BOB外围的一对反向的N沟道MOSFET，可减少BOB的一部分功耗，达到省电的效果。
另一方面，前文提到了在BOB电源中，BOB切换到旁路模式的工作原理为：BOB芯片内部的开关K1和开关K4导通、开关K2和开关K3不导通，电流可从V IN引脚进入，流经开关K1、电感L、开关K4，从V OUT引脚流出。具体地，当V IN＝V SET,V BOB＝V SET时，BOB工作切到旁路模式，在旁路模式下，BOB的工作电流流过如图5中的开关K1、电感L、开关K4时，BOB存在工作损耗，损耗功率＝I*I*R。其中，I为BOB的输出电流，R为BOB电源内部的开关K1、电感L、开关K4这3个元器件的导通阻抗之和(参考TPS63027芯片规格，开关K1、电感L、开关K4这3个元器件的导通阻抗分别为48mΩ、30mΩ、33mΩ；3个元器件的阻抗之和＝111mΩ)。据此，本申请的实施例提供另一种控制电子设备的方法，在BOB芯片外围增设开关元件，所述开关元件的导通阻抗小于BOB的旁路模式下的BOB电源内部的导通阻抗之和，通过控制开关元件的导通，减小BOB的旁路模式下的BOB电源的导通阻抗，可以节省BOB的一部分功耗。
本申请实施例提供另一种控制如图1所示的电子设备的方法，图9是本申请实施例提供的一种控制电子设备的方法的示意图，本申请实施例提供的控制电子设备的方法包括：
步骤910：获取BOB的输入电压。
步骤920：确定所述输入电压是否满足预设条件。
步骤930：在所述输入电压满足所述预设条件时，将所述BOB切换到省电工作状态。
所述获取BOB的输入电压包括：由所述BOB获取BOB的输入电压；所述确定所述输入电压是否满足预设条件包括：由所述BOB确定所述输入电压是否等于所述BOB的实际输出电压；例如，在获取BOB的输入电压V IN后，判断BOB的输入电压V IN是否等于所述BOB的实际输出电压V BOB。
其中，所述将所述BOB切换到省电工作状态包括：使所述BOB停止工作，并导通所述开关元件；或者，将所述BOB切换到旁路模式，并导通所述开关元件。
本申请实施例提供的控制电子设备的方法还包括：步骤940：在所述输入电压不满足所述预设条件时，关闭所述开关元件，并使BOB正常工作。
根据本申请的实施例提供的控制上述电子设备的方法，通过获取BOB的输入电压；确定输入电压是否满足预设条件；在输入电压满足所述预设条件时，将所述BOB切换到省电工作状态。如此，在BOB的外围增加开关元件，由于BOB外围的开关元件不受BOB芯片的封装影响，所述开关元件的导通阻抗可以做到很低(可选择10mΩ以内，例如，开关元件的导通阻抗为10mΩ)。也就是说，将BOB的旁路模式切换为外围的开关元件工作，或者，由BOB的旁路模式与外围的开关元件同时工作，由于外围的开关元件的导通阻抗小于旁路模式下BOB内部的导通阻抗之和(10mΩ显然远小于111mΩ)，减小了BOB旁路模式下的导通阻抗，可以节省BOB的一部分功耗，达到省电的效果。
需要指出的是，本申请实施例提供的如图9所示的控制电子设备的方法，还可应用于如图2(a)、图2(b)、图3(a)、图3(b)、图4(a)、图4(b)所示的电子设备。
本申请实施例提供一种控制如图2(a)所示的电子设备的方法，本申请实施例提供的控制电子设备的方法包括：获取BOB的输入电压；确定BOB的输入电压V IN是否等于所述BOB的实际输出电压V BOB；在所述输 入电压V IN等于BOB的实际输出电压V BOB时，将所述BOB切换到省电工作状态。
所述将所述BOB切换到省电工作状态包括：在所述输入电压V IN等于所述BOB的实际输出电压V BOB时，使所述BOB停止工作，并导通所述开关元件；或者，在所述输入电压V IN等于所述BOB的实际输出电压V BOB时，将所述BOB切换到旁路模式，并导通所述开关元件。
需要指出的是，第一省电工作状态为：使所述BOB停止工作，并导通所述开关元件。第二省电工作状态为：将所述BOB切换到旁路模式，并导通所述开关元件。由于开关元件的导通阻抗小于BOB旁路模式下的内部导通阻抗之和，第一省电工作状态下BOB电源的导通阻抗小于BOB电源旁路模式下的导通阻抗。而第二省电工作状态下BOB电源的导通阻抗为开关元件的导通阻抗并联BOB旁路模式下的内部导通阻抗，第二省电工作状态下BOB电源的导通阻抗比第一省电工作状态下BOB电源的导通阻抗更小，进一步减小了BOB旁路模式下的导通阻抗。
此外，本申请实施例提供的控制电子设备的方法还包括：在BOB的输入电压V IN不等于所述BOB的实际输出电压V BOB时，关闭所述开关元件，并使BOB正常工作。
根据本申请的实施例提供的控制上述电子设备的方法，通过获取BOB的输入电压；确定BOB的输入电压V IN是否等于所述BOB的实际输出电压V BOB；在输入电压满足V IN＝V BOB条件时，将所述BOB切换到省电工作状态。如此，减小了BOB旁路模式下的导通阻抗，可以节省BOB的一部分功耗，达到省电的效果，达到省电的效果。
本申请实施例提供的上述控制如图2(a)所示的电子设备的方法还可以应用于如图3(a)、如图3(b)所示的电子设备，例如，本申请实施例还提供一种控制如图3(a)所示的电子设备的方法，本申请实施例提供的控制电子设备的方法包括：获取BOB的输入电压；确定BOB的输入电压V IN是否等于所述BOB的实际输出电压V BOB；在所述输入电压V IN等 于BOB的实际输出电压V BOB时，将所述BOB切换到省电工作状态。
所述将所述BOB切换到省电工作状态包括：在所述输入电压V IN等于所述BOB的实际输出电压V BOB时，使所述BOB停止工作，并导通BOB外围的一个N沟道MOSFET；或者，在所述输入电压V IN等于所述BOB的实际输出电压V BOB时，将所述BOB切换到旁路模式，并导通BOB外围的一个N沟道MOSFET。
需要指出的是，第一省电工作状态为：使所述BOB停止工作，并导通BOB外围的一个N沟道MOSFET。第二省电工作状态为：将所述BOB切换到旁路模式，并导通BOB外围的一个N沟道MOSFET。由于BOB外围的一个N沟道MOSFET的导通阻抗小于BOB旁路模式下的内部导通阻抗之和，第一省电工作状态下BOB电源的导通阻抗小于BOB电源旁路模式下的导通阻抗。而第二省电工作状态下BOB电源的导通阻抗为BOB外围的一个N沟道MOSFET的导通阻抗并联BOB旁路模式下的内部导通阻抗，第二省电工作状态下BOB电源的导通阻抗比第一省电工作状态下BOB电源的导通阻抗更小，进一步减小了BOB旁路模式下的导通阻抗。
此外，本申请实施例提供的控制电子设备的方法还包括：在BOB的输入电压V IN不等于所述BOB的实际输出电压V BOB时，关闭BOB外围的一个N沟道MOSFET，并使BOB正常工作。
根据本申请的实施例提供的控制上述电子设备的方法，通过获取BOB的输入电压；确定BOB的输入电压V IN是否等于所述BOB的实际输出电压V BOB；在输入电压满足V IN＝V BOB条件时，将所述BOB切换到省电工作状态。如此，减小了BOB旁路模式下的导通阻抗，可以节省BOB的一部分功耗，达到省电的效果，达到省电的效果。
本申请实施例提供上述控制如图2(a)所示的电子设备的方法还可以应用于如图3(b)所示的电子设备，以下不再赘述。
本申请实施例提供一种控制如图2(b)所示的电子设备的方法，本申请实施例提供的控制电子设备的方法包括：获取BOB的输入电压；确 定BOB的输入电压V IN是否等于所述BOB的实际输出电压V BOB；在所述输入电压V IN等于BOB的实际输出电压V BOB时，将所述BOB切换到省电工作状态。
所述将所述BOB切换到省电工作状态，包括：将所述BOB切换到旁路模式，并导通所述开关元件。
需要指出的是，第三省电工作状态为：将所述BOB切换到旁路模式，并导通所述开关元件。而由于开关元件的导通阻抗小于BOB电源在旁路模式下的BOB内部的电感的导通阻抗(例如，10mΩ显然小于30mΩ)，第三省电工作状态下BOB电源的导通阻抗小于BOB旁路模式下的导通阻抗。
此外，本申请实施例提供的控制电子设备的方法还包括：在BOB的输入电压V IN不等于所述BOB的实际输出电压V BOB时，关闭所述开关元件，并使BOB正常工作。
根据本申请的实施例提供的控制上述电子设备的方法，通过获取BOB的输入电压；确定BOB的输入电压V IN是否等于所述BOB的实际输出电压V BOB；在输入电压满足V IN＝V BOB条件时，将所述BOB切换到省电工作状态。如此，减小了BOB旁路模式下的导通阻抗，可以节省BOB的一部分功耗，达到省电的效果，达到省电的效果。
本申请实施例提供上述控制如图2(b)所示的电子设备的方法还可以应用于如图4(a)、如图4(b)所示的电子设备，以下不再赘述。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示意性实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本申请的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
尽管已经示出和描述了本申请的实施例，本领域的普通技术人员可以理 解：在不脱离本申请的原理和宗旨的情况下可以对这些实施例进行多种变化、修改、替换和变型，本申请的范围由权利要求及其等同物限定。

Claims (10)

  1. 一种电子设备，包括CPU、降压-升压转换器BOB、电感、开关元件，所述CPU分别与所述BOB和所述开关元件连接，所述BOB具有至少两对引脚，所述至少两对引脚中的第一对引脚分别连接所述电感的两端，所述至少两对引脚中的第二对引脚分别连接所述开关元件的两端；
    在所述BOB的输入电压小于或等于电压阈值，或者所述BOB的输入电压等于所述BOB的实际输出电压的情况下，导通所述开关元件；
    其中，所述电压阈值等于所述BOB的实际输出电压/η，其中，η为BOB的转换效率。
  2. 根据权利要求1所述的电子设备，其中，所述开关元件包括金属-氧化物半导体场效应晶体管MOSFET，所述MOSFET具有栅极、源极和漏极，所述栅极与所述CPU相连接，所述第二对引脚包括第一电压引脚和第二电压引脚，所述第一电压引脚和所述第二电压引脚分别连接所述MOSFET的源极和漏极。
  3. 根据权利要求1所述的电子设备，其中，所述开关元件包括一对反向连接的MOSFET，所述第二对引脚包括第一电压引脚和第二电压引脚，所述第一电压引脚、所述一对反向连接的MOSFET和所述第二电压引脚依次串联连接。
  4. 根据权利要求3所述的电子设备，其中，所述一对反向连接的MOSFET包括第一MOSFET和第二MOSFET，所述第一MOSFET和第所述二MOSFET均为N沟道MOSFET，第一MOSFET的漏极与第二MOSFET的漏极连接，第一MOSFET的源极连接所述第一电压引脚，第二MOSFET的源极连接所述第二电压引脚，第一MOSFET的栅极和第二MOSFET的栅极均连接所述CPU。
  5. 根据权利要求3所述的电子设备，其中，所述一对反向连接的MOSFET包括第一MOSFET和第二MOSFET，所述第一MOSFET和第所述二MOSFET均为P沟道MOSFET，第一MOSFET的源极与第二MOSFET 的源极连接，第一MOSFET的漏极连接所述第一电感引脚，第二MOSFET的漏极连接所述第二电感引脚，第一MOSFET的栅极和第二MOSFET的栅极均连接所述CPU。
  6. 一种控制权利要求1-5任一项所述的电子设备的方法，所述方法包括：
    获取BOB的输入电压；
    确定所述输入电压是否满足预设条件，所述预设条件包括：所述BOB的输入电压小于或等于电压阈值，或者所述BOB的输入电压等于所述BOB的实际输出电压；其中，所述电压阈值等于所述BOB的实际输出电压/η，其中，η为BOB的转换效率；
    在所述输入电压满足所述预设条件时，导通所述开关元件。
  7. 根据权利要求6所述的方法，其中，所述在所述输入电压满足所述预设条件时，导通所述开关元件包括：
    在所述BOB的输入电压小于或等于所述电压阈值的情况下，使所述BOB停止工作，并导通所述开关元件；
    或者，在所述BOB的输入电压小于或等于电压阈值，或者所述BOB的输入电压等于所述BOB的实际输出电压的情况下，将所述BOB切换到旁路模式，并导通所述开关元件。
  8. 根据权利要求6所述的方法，其中，所述方法还包括：在所述输入电压不满足所述预设条件时，关闭所述开关元件。
  9. 根据权利要求6所述的方法，其中，所述获取BOB的输入电压包括：由所述BOB获取BOB的输入电压；
    所述确定所述输入电压是否满足预设条件包括：由所述BOB确定所述输入电压是否等于所述BOB的实际输出电压。
  10. 根据权利要求6所述的方法，其中，所述获取BOB的输入电压包括：由所述CPU获取BOB的输入电压；
    所述确定所述输入电压是否满足预设条件包括：由所述CPU确定所述 输入电压是否小于或等于电压阈值。
PCT/CN2022/073994 2021-01-27 2022-01-26 一种电子设备及其控制方法 WO2022161395A1 (zh)

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