WO2022158370A1 - Dispositif à ondes élastiques - Google Patents

Dispositif à ondes élastiques Download PDF

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Publication number
WO2022158370A1
WO2022158370A1 PCT/JP2022/000942 JP2022000942W WO2022158370A1 WO 2022158370 A1 WO2022158370 A1 WO 2022158370A1 JP 2022000942 W JP2022000942 W JP 2022000942W WO 2022158370 A1 WO2022158370 A1 WO 2022158370A1
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Prior art keywords
electrode
wave device
elastic wave
electrode fingers
layer
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PCT/JP2022/000942
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English (en)
Japanese (ja)
Inventor
克也 大門
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株式会社村田製作所
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Publication of WO2022158370A1 publication Critical patent/WO2022158370A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

Definitions

  • the present invention relates to an acoustic wave device in which reflectors are provided on both sides of an IDT electrode.
  • FIGS. 33A to 33C of the patent document disclose a configuration in which a capacitor is connected between a pair of bus bars of IDT electrodes. This capacitor is formed by providing a pair of electrodes that overlap each other via a dielectric on the piezoelectric body in a region away from the region where the IDT electrodes and the reflector are provided.
  • the capacitance is configured outside the region where the IDT electrodes and reflectors are provided. Therefore, a large space is required on the piezoelectric body, and miniaturization has been difficult.
  • An object of the present invention is to provide an elastic wave device that can be miniaturized.
  • An elastic wave device comprises a substrate having a piezoelectric layer, IDT electrodes provided on the piezoelectric layer, and first and second electrodes disposed on both sides of the IDT electrodes on the piezoelectric layer.
  • 2 reflectors wherein the IDT electrode comprises a first bus bar, a second bus bar provided separated from the first bus bar, and a plurality of wires connected to the first bus bar It has a first electrode finger and a plurality of second electrode fingers connected to the second bus bar, and each of the first and second reflectors includes the plurality of electrode fingers and the plurality of a first connecting portion commonly connecting one end sides of the electrode fingers; and a second connecting portion commonly connecting the other end sides of the plurality of electrode fingers;
  • a comb tooth electrode portion is formed between the connection portion or the second connection portion and the first bus bar or the second bus bar of the IDT electrode, and the comb tooth electrode portion is connected to the first bus bar.
  • the comb tooth has a plurality of third electrode fingers connected to the second bus bar
  • FIG. 1 is a plan view of an elastic wave device according to a first embodiment of the invention.
  • FIG. 2 is a plan view of an elastic wave device according to a modification of the first embodiment;
  • FIG. 3 is a front sectional view of the elastic wave device of the first embodiment of the invention.
  • FIG. 4 is a schematic plan view showing a state in which the dielectric film is removed in the elastic wave device of the first embodiment of the invention.
  • FIG. 5 is a partially cutaway front cross-sectional view for explaining a modification of the elastic wave device of the first embodiment of the present invention.
  • FIG. 6 is a partially cutaway plan view showing the main part of the elastic wave device according to the second embodiment of the present invention.
  • FIG. 7 is a diagram showing impedance characteristics of elastic wave devices of Examples and Comparative Examples.
  • FIG. 1 is a plan view of an elastic wave device according to a first embodiment of the invention.
  • FIG. 2 is a plan view of an elastic wave device according to a modification of the first embodiment
  • FIG. 8 is a schematic plan view for explaining the electrode structure of the acoustic wave device according to the third embodiment of the invention.
  • FIG. 9 is a partially cutaway plan view for explaining an elastic wave device according to a fourth embodiment of the present invention.
  • FIG. 10 is a front cross-sectional view of an elastic wave device according to a fifth embodiment of the invention.
  • FIG. 11 is a front cross-sectional view of an acoustic wave device according to a sixth embodiment of the invention.
  • FIG. 1 is a plan view of an elastic wave device according to a first embodiment of the present invention
  • FIG. 3 is a front cross-sectional view thereof.
  • the elastic wave device 1 includes a substrate 6 having a piezoelectric layer 5 , IDT electrodes 7 provided on the piezoelectric layer 5 , and first and second reflectors 8 and 9 .
  • the first and second reflectors 8 and 9 are arranged on both sides of the IDT electrode 7 in the elastic wave propagation direction. This constitutes a one-port elastic wave resonator.
  • the IDT electrode 7 includes a first bus bar 11, a second bus bar 12 separated from the first bus bar 11, a plurality of first electrode fingers 13 and a plurality of second electrode fingers. 14.
  • the plurality of first electrode fingers 13 has one end connected to the first bus bar 11 and the other end extending toward the second bus bar 12 side.
  • One end of the plurality of second electrode fingers 14 is connected to the second busbar 12 and the other end extends toward the first busbar 11 side.
  • the plurality of first electrode fingers 13 and the plurality of second electrode fingers 14 are interdigitated.
  • the elastic wave propagation direction is a direction perpendicular to the direction in which the plurality of first and second electrode fingers 13 and 14 extend.
  • a region where the first electrode fingers 13 and the second electrode fingers 14 overlap when viewed in the elastic wave propagation direction is the intersection region K.
  • FIG. In the intersecting region K elastic waves are excited by applying an AC electric field between the first electrode finger 13 and the second electrode finger 14 .
  • the intersecting area K includes a central area C, a first low-pitched velocity area E1 provided on the first busbar 11 side of the central area C, and a second low-pitched velocity area E2 provided on the second busbar 12 side. and The sound velocities of the first and second low sound velocity areas E1 and E2 are lower than that of the central area C. As shown in FIG.
  • the first and second dielectric layers 15 and 16 are provided in order to lower the sound velocity of the first and second low sound velocity regions E1 and E2.
  • the sound velocities of the outer regions F1 and F2 of the first and second low sound speed regions E1 and E2 are higher than those of the first and second low sound speed regions E1 and E2.
  • the dielectric for forming the first and second dielectric layers 15 and 16 is not particularly limited, and silicon oxide, tantalum pentoxide, hafnium oxide, tungsten oxide, etc. can be used.
  • a dielectric film 10 may be provided in the central region C, as shown in FIG. In that case, the dielectric film 10 can use titanium dioxide, silicon carbide, silicon nitride, or the like as a dielectric material.
  • the first reflector 8 includes a plurality of electrode fingers 8a, a first connecting portion 17 commonly connecting one end side of the plurality of electrode fingers 8a, and a second connecting portion 17 commonly connecting the other end side of the plurality of electrode fingers 8a. and a connection portion 18 of .
  • the multiple electrode fingers 8 a extend in the same direction as the multiple first electrode fingers 13 and the multiple second electrode fingers 14 of the IDT electrode 7 .
  • the second connecting portion 18 has a strip-like shape extending in the elastic wave propagation direction. That is, it has the same shape as the first and second busbars 11 and 12 .
  • the first connecting portion 17 is composed of a comb-teeth electrode in this embodiment. That is, it has a plurality of fourth electrode fingers 17b. In one of the plurality of fourth electrode fingers 17b, the plurality of electrode fingers 8a are commonly connected at one end thereof. A plurality of fourth electrode fingers 17 b are formed extending from the first bus bar 11 toward the first connecting portion 17 . The plurality of third electrode fingers 17a and the plurality of fourth electrode fingers 17b are interdigitated to form a comb-teeth electrode portion. The plurality of third electrode fingers 17a and the plurality of fourth electrode fingers 17b are extended along the elastic wave propagation direction.
  • the third and fourth electrode fingers 17a, 17b extend in a direction orthogonal to the plurality of electrode fingers forming the first or second reflectors 8,9.
  • One end of the plurality of third electrode fingers 17 a is electrically connected to the first bus bar 11 .
  • One ends of the plurality of fourth electrode fingers 17 b are connected in common and connected to the first reflector 8 .
  • FIG. 4 is a schematic plan view of the acoustic wave device 1 with the dielectric film 19 removed.
  • a capacitance is formed by the first connection portion 17 between the first reflector 8 and the first bus bar 11 of the IDT electrode 7 . That is, a capacitance is formed by the comb-teeth electrode portion and the dielectric film 19 provided on the comb-teeth electrode portion.
  • both ends of a plurality of electrode fingers 9a are connected by third and fourth connection portions 17A and 18A.
  • the third and fourth connecting portions 17A, 18A are configured similarly to the second connecting portion 18. As shown in FIG.
  • the comb tooth electrode portion is provided between the first bus bar 11 and the first reflector 8 on the side of the IDT electrode 7 . That is, the comb-teeth electrode portion is provided in a region corresponding to the region where the first connection portion 17 is provided. Therefore, on the piezoelectric layer 5, a large space for forming capacitance is not required other than the space where the IDT electrode 7 and the first and second reflectors 8 and 9 are provided. Therefore, the elastic wave device 1 can be miniaturized in spite of having the above capacity.
  • the dielectric film 19 an appropriate dielectric that can increase the capacitance can be used, and is not particularly limited.
  • the dielectric material forming the dielectric film 19 has a higher dielectric constant than the material forming the piezoelectric layer 5 .
  • a dielectric material one selected from the group consisting of tantalum pentoxide, hafnium oxide, niobium pentoxide, and titanium dioxide is more preferably used. In that case, the capacity can be further increased, and the miniaturization can be further advanced.
  • the dielectric material forming the dielectric film 19 and the dielectric material forming the first and second dielectric layers 15 and 16 are made of the same material. In that case, the first and second dielectric layers 15 and 16 and the dielectric film 19 can be formed by the same process.
  • the substrate 6 has a laminated structure of a high acoustic velocity member layer 3 and a low acoustic velocity film 4 as an intermediate layer laminated between the supporting substrate 2 and the piezoelectric layer 5 .
  • the support substrate 2 is made of an appropriate insulating material such as silicon or alumina or a semiconductor material.
  • the high acoustic velocity member layer 3 is made of a high acoustic velocity material.
  • a high acoustic velocity material is a material in which the acoustic velocity of a propagating bulk wave is higher than the acoustic velocity of an elastic wave propagating through the piezoelectric layer 5 .
  • Such high sonic materials include aluminum oxide, silicon carbide, silicon nitride, silicon oxynitride, silicon, sapphire, lithium tantalate, lithium niobate, quartz, alumina, zirconia, cordierite, mullite, steatite, fort.
  • the high acoustic velocity member layer 3 is made of SiN.
  • the low sound velocity film 4 is made of a low sound velocity material.
  • a low sound velocity material is a material in which a propagating bulk wave has a lower acoustic velocity than a bulk wave propagating through the piezoelectric layer 5 .
  • Such low sound velocity materials include silicon oxide, glass, silicon oxynitride, tantalum oxide, compounds obtained by adding fluorine, carbon, boron, hydrogen, or silanol groups to silicon oxide, and media containing the above materials as main components. etc. can be used.
  • the low sound velocity film 4 is made of silicon oxide.
  • the piezoelectric layer 5 is made of piezoelectric single crystal such as LiTaO 3 or LiNbO 3 .
  • the piezoelectric layer 5 is made of LiTaO 3 .
  • the intermediate layer is composed of a laminate of the high acoustic velocity member layer 3 and the low acoustic velocity film 4, but it is also possible to use only the low acoustic velocity membrane 4 as the intermediate layer and configure the support substrate 2 from a high acoustic velocity material.
  • the support substrate 2 and the high acoustic velocity member layer 3 may be integrally formed of a high acoustic velocity material.
  • the IDT electrode 7 and the first and second reflectors 8 and 9 are made of an appropriate metal or alloy. A laminate of a plurality of metal layers may also be used. In this embodiment, the IDT electrode 7 and the first and second reflectors 8 and 9 are composed of a laminate of Ti film/AlCu film/Ti film.
  • FIG. 5 is a partially cutaway front cross-sectional view for explaining a modification of the elastic wave device of the first embodiment.
  • a protective layer 21 is provided so as to cover the IDT electrodes 7 .
  • This protective layer 21 can be composed of a suitable dielectric such as silicon oxide.
  • a dielectric material with a positive temperature coefficient of frequency is used, such as silicon oxide. In that case, the frequency temperature characteristics of the elastic wave device can be improved.
  • FIG. 6 is a partially cutaway plan view for explaining the essential parts of the elastic wave device according to the second embodiment of the present invention.
  • FIG. 6 shows an enlarged portion where the IDT electrode 37 and the first reflector 38 are provided.
  • the IDT electrode 37 has first and second busbars 41 and 42 .
  • the first busbar 41 connects the inner busbar portion 41a positioned on the crossing region K side, the outer busbar portion 41b positioned outside, and the inner busbar portion 41a and the outer busbar portion 41b. and a portion 41c.
  • a plurality of openings 41d are provided in the elastic wave propagation direction.
  • a connecting portion 41c is provided between the adjacent openings 41d.
  • the second busbar 42 also has an inner busbar portion 42a, an outer busbar portion 42b, and a connecting portion 42c. Also, a plurality of openings 42d are provided along the elastic wave propagation direction.
  • the second connecting portion 48 has a similar configuration. That is, it has an inner busbar portion 48a, an outer busbar portion 48b, and a connecting portion 48c, and an opening 48d is provided between the connecting portions 48c.
  • the second connection portion 48 is a portion that commonly connects a plurality of electrode fingers 38a. The second connection portion 48 does not connect the first reflector 38 and the IDT electrode 37 .
  • an inner busbar portion 47a, a connecting portion 47c, and an opening 47d are provided, and the outer end of the connecting portion 47c is connected to the comb-teeth electrode portion. That is, the outer end of the connecting portion 47c is connected to one of the plurality of fourth electrode fingers 47f forming the comb-teeth electrode portion.
  • the plurality of third electrode fingers 47e are connected to the first bus bar 41 as in the first embodiment.
  • a dielectric film is provided to cover the comb-teeth electrode portion, as in the first embodiment.
  • FIG. 6 shows the configuration between the connection portion of the IDT electrode 37 and the first reflector 38
  • the connection portion of the second reflector is configured similarly to the second connection portion 48 .
  • the first connection portion 47 has a comb-teeth electrode structure and a dielectric film covering the comb-teeth electrode portion is provided.
  • a capacitance can be formed between one reflector 38 .
  • this portion constitutes the capacitance, the acoustic wave device 31 can also be made smaller.
  • the elastic wave device 1 of the first embodiment was manufactured with the following design parameters.
  • Support substrate Si High sound velocity member layer: SiN film, thickness 900 nm Low sound velocity film: SiO2 film, film thickness is 600nm
  • Piezoelectric layer LiTaO 3 film, film thickness: 600 nm, orientation: 50° Y-cut X-propagation IDT electrode 7, first reflector 8, and second reflector have a laminated structure of Ti film/AlCu film/Ti film The film thickness is 12 nm/140 nm/4 nm from the piezoelectric layer side.
  • the wavelength ⁇ determined by the electrode finger pitch of the IDT electrode 7 is 2 ⁇ m, the duty is 0.5, and the number of electrode finger pairs is 100 pairs.
  • the intersection width, which is the dimension of the intersection region K, is 20 ⁇ .
  • the dielectric film provided on the first connection portion 17 was a Ta 2 O 5 film with a thickness of 25 nm.
  • Ta 2 O 5 films were laminated as first and second dielectric layers in the first and second low-temperature regions E 1 and E 2 of the IDT electrode 7 .
  • the film thickness was set to 25 nm.
  • the dimension in the cross width direction of the first and second low-pitched sound velocity regions E1 and E2 was set to 0.6 ⁇ .
  • an acoustic wave device of a comparative example was produced in the same manner as in the above example, except that the first connection portion was made the same as the second connection portion.
  • FIG. 7 is a diagram showing impedance characteristics of the elastic wave devices of the above examples and comparative examples.
  • the anti-resonance frequency is shifted to the low frequency side in the example as compared with the comparative example. That is, since a capacitance is inserted between the IDT electrode 7 and the first reflector 8, it is possible to narrow the fractional band.
  • the impedance of the example is lower than that of the comparative example. For this reason, when forming IDT electrodes having the same capacitance value, in the embodiment, the number of pairs of IDT electrodes in the propagation direction of the elastic wave is reduced, or the crossing width, which is the width of the crossing region in the direction in which the electrode fingers extend, is reduced. can be reduced, and miniaturization is possible.
  • FIG. 8 is a schematic plan view for explaining the electrode structure of the acoustic wave device according to the third embodiment of the invention.
  • illustration of the dielectric film laminated on the comb-teeth electrode portion is omitted.
  • the first connection portion 17 has a capacitance.
  • the second connection portion 18 also has comb-teeth electrode portions.
  • the third connection portion 17A and the fourth connection portion 18A have comb-teeth electrode portions.
  • a capacitance is formed at each of the connection portions on both sides in the direction in which the electrode fingers 8a of the first reflector 8 extend and on both sides in the direction in which the electrode fingers 9a of the second reflector 9 extend.
  • the capacitors composed of the comb-teeth electrode portion and the dielectric film may be provided in all of the first and second connection portions of the first and second reflectors.
  • a capacitor may be formed in at least one connection portion among the plurality of connection portions as in the first embodiment.
  • FIG. 9 is a partially cutaway plan view showing an elastic wave device according to a fourth embodiment of the present invention.
  • the first and second dielectric layers 15 and 16 are laminated in the first and second low-frequency regions E1 and E2 in order to suppress the transverse mode.
  • the elastic wave device 61 shown in FIG. 9 the second electrode finger 14 and the first electrode finger 13 are provided with wide portions 14m and 13m in the first and second low-frequency regions E1 and E2, respectively.
  • the sound velocities of the first and second low sound velocity regions E1 and E2 are lowered.
  • the first and second low-frequency regions E1 and E2 may have a structure in which the electrode fingers are partially widened.
  • FIG. 10 is a front cross-sectional view of an elastic wave device according to a fifth embodiment of the invention.
  • intermediate layer 72 is provided between piezoelectric layer 5 and support substrate 2 .
  • the intermediate layer 72 is a laminate of high acoustic impedance layers 72a, 72c, 72e with relatively high acoustic impedance and low acoustic impedance layers 72b, 72d, 72f with relatively low acoustic impedance.
  • the intermediate layer 72 which is such an acoustic reflection layer, may be used.
  • FIG. 11 is a front cross-sectional view of an acoustic wave device according to a sixth embodiment of the invention.
  • the elastic wave device 81 is a piezoelectric substrate in which the entire substrate 82 having a piezoelectric layer is made of a piezoelectric material. That is, in the present invention, the substrate may be composed of a piezoelectric single crystal such as LiTaO 3 or LiNbO 3 .

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L'invention fournit un dispositif à ondes élastiques permettant une miniaturisation.　Le dispositif à ondes élastiques (1) de l'invention est équipé d'un substrat (6) possédant une couche (5) de matériau piézoélectrique, d'une électrode de transducteur interdigital (7), et d'un premier ainsi que d'un second réflecteur (8, 9). Une première barre omnibus (11) ou une seconde barre omnibus (12) de l'électrode de transducteur interdigital (7), et une première et/ou une seconde partie connexion (17, 18) aux deux extrémités du premier et du second réflecteur (8, 9), possèdent une partie électrode en dents de peigne. La partie électrode en dents de peigne possède à son tour une pluralité de troisièmes doigts d'électrode (17a) connectée à la première ou seconde barre omnibus (11, 12), et une pluralité de quatrièmes doigts d'électrode (17b) connectée à la première ou seconde partie connexion (17, 18). Un film diélectrique (19) est agencé de manière à recouvrir la partie électrode en dents de peigne.
PCT/JP2022/000942 2021-01-22 2022-01-13 Dispositif à ondes élastiques WO2022158370A1 (fr)

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JP2021-008814 2021-01-22
JP2021008814 2021-01-22

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024029360A1 (fr) * 2022-08-04 2024-02-08 株式会社村田製作所 Dispositif à ondes élastiques et dispositif de filtre
WO2024116813A1 (fr) * 2022-11-28 2024-06-06 株式会社村田製作所 Dispositif à ondes élastiques et dispositif de filtre

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH077369A (ja) * 1993-06-16 1995-01-10 Murata Mfg Co Ltd 弾性表面波フィルタ
WO2012127793A1 (fr) * 2011-03-22 2012-09-27 パナソニック株式会社 Élément à onde élastique
JP2017199984A (ja) * 2016-04-25 2017-11-02 株式会社村田製作所 弾性波装置
WO2019065667A1 (fr) * 2017-09-27 2019-04-04 株式会社村田製作所 Dispositif de filtre à ondes acoustiques
JP2019121873A (ja) * 2017-12-28 2019-07-22 太陽誘電株式会社 弾性波デバイス、フィルタおよびマルチプレクサ
JP2020053876A (ja) * 2018-09-27 2020-04-02 京セラ株式会社 弾性波装置、分波器および通信装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH077369A (ja) * 1993-06-16 1995-01-10 Murata Mfg Co Ltd 弾性表面波フィルタ
WO2012127793A1 (fr) * 2011-03-22 2012-09-27 パナソニック株式会社 Élément à onde élastique
JP2017199984A (ja) * 2016-04-25 2017-11-02 株式会社村田製作所 弾性波装置
WO2019065667A1 (fr) * 2017-09-27 2019-04-04 株式会社村田製作所 Dispositif de filtre à ondes acoustiques
JP2019121873A (ja) * 2017-12-28 2019-07-22 太陽誘電株式会社 弾性波デバイス、フィルタおよびマルチプレクサ
JP2020053876A (ja) * 2018-09-27 2020-04-02 京セラ株式会社 弾性波装置、分波器および通信装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024029360A1 (fr) * 2022-08-04 2024-02-08 株式会社村田製作所 Dispositif à ondes élastiques et dispositif de filtre
WO2024116813A1 (fr) * 2022-11-28 2024-06-06 株式会社村田製作所 Dispositif à ondes élastiques et dispositif de filtre

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