WO2022145302A1 - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
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- WO2022145302A1 WO2022145302A1 PCT/JP2021/047508 JP2021047508W WO2022145302A1 WO 2022145302 A1 WO2022145302 A1 WO 2022145302A1 JP 2021047508 W JP2021047508 W JP 2021047508W WO 2022145302 A1 WO2022145302 A1 WO 2022145302A1
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
Definitions
- the present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate with a processing fluid in a chamber.
- the processing process of various substrates such as semiconductor substrates and glass substrates for display devices includes processing the surface of the substrate with various processing fluids.
- Treatments using liquids such as chemicals and rinsing fluids as treatment fluids have been widely performed, but in recent years, treatments using supercritical fluids have also been put into practical use.
- a supercritical fluid having a lower surface tension than a liquid penetrates deep into the gaps of the pattern, so that the treatment can be performed efficiently.
- Patent Document 1 describes a substrate processing apparatus that dries a substrate using a supercritical fluid.
- two plate-shaped members are arranged so as to face each other, and the gap thereof constitutes a processing container that functions as a processing space.
- a wafer (board) placed on a thin plate-shaped holding plate is carried in from one end of the processing space, and carbon dioxide in a supercritical state is introduced from the other end.
- heaters are attached to the upper and lower walls of the chamber.
- the temperature of the chamber constant, for example, higher than the critical temperature of the processing fluid by heating with a heater
- the processing fluid introduced into the chamber is converted to a supercritical state, and the state is stabilized. It is possible to maintain.
- Japanese Unexamined Patent Publication No. 2018-082043 (for example, FIG. 3)
- Such turbulence can also occur due to temperature unevenness of the processing fluid in the chamber. This is because the fluid in the supercritical state has a large change in density with respect to temperature, and therefore convection is likely to occur due to temperature unevenness. For this reason, it is desirable that the portion in the chamber that comes into direct contact with the processing fluid does not become a heating source that causes temperature unevenness in the processing fluid.
- the entire chamber having a large heat capacity is heated, and it is not possible to meet the demand for such fine temperature control.
- the present invention has been made in view of the above problems, and in a substrate processing technique for treating a substrate with a processing fluid in the chamber, a treatment that causes turbulence while maintaining the temperature inside the chamber at a temperature suitable for supercritical treatment. It is an object of the present invention to provide a technique capable of suppressing a temperature change of a fluid and performing supercritical treatment on a substrate satisfactorily.
- One aspect of the present invention is a substrate processing apparatus that processes a substrate with a processing fluid in a supercritical state, and in order to achieve the above object, a chamber having a processing space inside that can accommodate the substrate, and the treatment.
- a supply / discharge unit for supplying and discharging the processing fluid to the space, a heater arranged below the substrate in the chamber to heat the inside of the chamber, and a control unit for controlling the heater are provided.
- the control unit stops heating by the heater for a predetermined period from the time when the processing fluid in the supercritical state is introduced into the processing space.
- one aspect of the present invention is a substrate processing method for processing a substrate with a processing fluid in a supercritical state in a processing space in a chamber, and in order to achieve the above object, the substrate is more than the substrate in the chamber.
- a heater for heating the inside of the chamber is arranged below, the substrate is carried into the processing space, heating is performed by the heater, and the processing fluid is supplied to the processing space to bring the processing space into a supercritical state.
- the processing fluid is discharged from the processing space, and the heating is stopped for a predetermined period from the time when the processing fluid in the supercritical state is introduced into the processing space.
- the temperature inside the chamber at a temperature suitable for supercritical treatment by arranging a heater in the chamber and heating the chamber.
- the heating by the heater is stopped. Therefore, it is avoided that the introduced processing fluid is heated by heating from the heater.
- the heater is placed below the substrate housed in the chamber, convection caused by the upward movement of the processing fluid that has become warm and low density on the lower side of the substrate causes turbulence. .. The generation of such turbulence can be suppressed by stopping the heater heating.
- the supercritical treatment is executed for the purpose of replacing the liquid adhering to the substrate with the processing fluid in the supercritical state and removing it from the substrate.
- the turbulent flow suppressing action for preventing the liquid separated from the substrate from reattaching may be sustained from the start to the completion of the replacement of the liquid by the processing fluid in the supercritical state. That is, it is sufficient that the heater heating is stopped for at least a predetermined period from the time when the processing fluid is introduced into the chamber until the processing can be considered to be completed.
- the inside of the chamber can be maintained at a temperature suitable for supercritical treatment by heating the inside of the chamber with a heater arranged below the substrate in the chamber.
- the heating of the heater is stopped, so that the processing fluid is heated in the chamber to generate convection and prevent the substrate from being contaminated. be able to. Therefore, it is possible to process the substrate satisfactorily.
- FIG. 1 is a diagram showing a schematic configuration of a substrate processing apparatus capable of executing the substrate processing method according to the present invention.
- the substrate processing device 1 is a device for processing the surface of various substrates such as a semiconductor substrate by using a supercritical fluid.
- the XYZ Cartesian coordinate system is set as shown in FIG.
- the XY plane is a horizontal plane
- the Z direction represents a vertical direction. More specifically, the (-Z) direction represents a vertical downward direction.
- the "board" in the present embodiment includes a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for a FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, and an optical circuit board.
- Various substrates such as magnetic disk substrates can be applied.
- a substrate processing apparatus mainly used for processing a disk-shaped semiconductor wafer will be described as an example with reference to the drawings. However, it is similarly applicable to the processing of various substrates exemplified above. In addition, various shapes of the substrate can be applied.
- the board processing device 1 includes a processing unit 10, a transfer unit 30, a supply unit 50, and a control unit 90.
- the processing unit 10 is the main execution body of the supercritical drying process.
- the transfer unit 30 receives the unprocessed substrate S conveyed by an external transfer device (not shown) and carries it into the processing unit 10, and also transfers the processed substrate S from the processing unit 10 to the external transfer device.
- the supply unit 50 supplies the chemical substances, power, energy, and the like necessary for processing to the processing unit 10 and the transfer unit 30.
- the control unit 90 controls each part of these devices to realize a predetermined process.
- the control unit 90 includes a CPU 91, a memory 92, a storage 93, an interface 94, and the like.
- the CPU 91 executes various control programs.
- the memory 92 temporarily stores the processing data.
- the storage 93 stores a control program executed by the CPU 91.
- the interface 94 exchanges information with users and external devices. The operation of the device, which will be described later, is realized by the CPU 91 executing a control program written in the storage 93 in advance and causing each part of the device to perform a predetermined operation.
- the processing unit 10 has a structure in which the processing chamber 12 is mounted on the pedestal 11.
- the processing chamber 12 is composed of a combination of several metal blocks, and the inside thereof is hollow to form a processing space SP.
- the substrate S to be processed is carried into the processing space SP and undergoes processing.
- a slit-shaped opening 121 extending in the X direction is formed on the ( ⁇ Y) side surface of the processing chamber 12.
- the processing space SP and the external space communicate with each other through the opening 121.
- the cross-sectional shape of the processing space SP is substantially the same as the opening shape of the opening 121. That is, the processing space SP is a cavity having a long cross-sectional shape in the X direction and a short cross-sectional shape in the Z direction and extending in the Y direction.
- a lid member 13 is provided on the ( ⁇ Y) side side surface of the processing chamber 12 so as to close the opening 121.
- the lid member 13 closes the opening 121 of the processing chamber 12 to form an airtight processing container. This makes it possible to process the substrate S under high pressure in the internal processing space SP.
- a flat plate-shaped support tray 15 is attached to the (+ Y) side side surface of the lid member 13 in a horizontal posture.
- the upper surface 151 of the support tray 15 is a support surface on which the substrate S can be placed.
- the lid member 13 is supported so as to be horizontally movable in the Y direction by a support mechanism (not shown).
- the lid member 13 can be moved back and forth with respect to the processing chamber 12 by the advancing / retreating mechanism 53 provided in the supply unit 50.
- the advancing / retreating mechanism 53 has a linear motion mechanism such as a linear motor, a linear motion guide, a ball screw mechanism, a solenoid, and an air cylinder. Such a linear motion mechanism moves the lid member 13 in the Y direction.
- the advancing / retreating mechanism 53 operates in response to a control command from the control unit 90.
- the support tray 15 is brought to the support tray 15. Access is possible. That is, the substrate S can be placed on the support tray 15 and the substrate S mounted on the support tray 15 can be taken out.
- the support tray 15 is accommodated in the processing space SP. When the substrate S is placed on the support tray 15, the substrate S is carried into the processing space SP together with the support tray 15.
- the processing space SP is sealed by the lid member 13 moving in the (+ Y) direction and closing the opening 121.
- a seal member 122 is provided between the (+ Y) side side surface of the lid member 13 and the ( ⁇ Y) side side surface of the processing chamber 12, and the airtight state of the processing space SP is maintained.
- the seal member 122 is made of rubber, for example.
- the lid member 13 is fixed to the processing chamber 12 by a locking mechanism (not shown). As described above, in this embodiment, the lid member 13 is in a closed state (solid line) in which the opening 121 is closed to seal the processing space SP, and a separated state in which the substrate S can be taken in and out greatly separated from the opening 121. It can be switched between (dotted line) and.
- the processing for the substrate S is executed in the processing space SP while the airtight state of the processing space SP is secured.
- a substance that can be used for supercritical processing for example, carbon dioxide
- the processing fluid is supplied to the processing unit 10 in a gas, liquid or supercritical state.
- Carbon dioxide is a chemical substance suitable for supercritical drying treatment because it is in a supercritical state at a relatively low temperature and low pressure and has a property of well dissolving an organic solvent often used for substrate treatment.
- the critical points at which carbon dioxide is in a supercritical state are an atmospheric pressure (critical pressure) of 7.38 MPa and a temperature (critical temperature) of 31.1 ° C.
- the processing fluid is filled in the processing space SP, and when the inside of the processing space SP reaches an appropriate temperature and pressure, the processing space SP is filled with the processing fluid in a supercritical state. In this way, the substrate S is processed by the supercritical fluid in the processing chamber 12.
- the supply unit 50 is provided with a fluid recovery unit 55, and the treated fluid is collected by the fluid recovery unit 55.
- the fluid supply unit 57 and the fluid recovery unit 55 are controlled by the control unit 90.
- the heater 155 is built in the support tray 15 in this embodiment. The temperature of the heater 155 is controlled by the temperature adjusting unit 59 of the supply unit 50.
- the temperature adjusting unit 59 operates in response to a control command from the control unit 90, and supplies electric power to the heater 155 to generate heat.
- the heater 155 generates heat to heat the support tray 15, and the inner wall surface of the processing space SP is heated by the radiant heat from the support tray 15.
- the temperature adjusting unit 59 also has a function of controlling the temperature of the processing fluid supplied from the fluid supply unit 57.
- the processing space SP has a shape and volume that can accept the support tray 15 and the substrate S supported by the support tray 15. That is, the processing space SP accepts a substantially rectangular cross-sectional shape that is wider than the width of the support tray 15 in the horizontal direction and larger than the combined height of the support tray 15 and the substrate S in the vertical direction, and the support tray 15. It has a possible depth. As described above, the processing space SP has a shape and a volume sufficient to receive the support tray 15 and the substrate S. However, the gap between the support tray 15 and the substrate S and the inner wall surface of the processing space SP is small. Therefore, the amount of processing fluid required to fill the processing space SP is relatively small.
- the processing space SP is roughly divided into a space above the support tray 15 and a space below the support tray 15.
- the processing space SP is divided into a space above the upper surface of the substrate S and a space below the lower surface of the support tray 15. ..
- the fluid supply unit 57 is further (+ Y) side of the (+ Y) side end portion of the substrate S, and is provided in the space above the substrate S and the space below the support tray 15 in the processing space SP, respectively.
- the processing fluid is supplied.
- the fluid recovery unit 55 is further (—Y) side of the ( ⁇ Y) side end portion of the substrate S, and is a space above the substrate S and a space below the support tray 15 in the processing space SP.
- the processing fluid is discharged from and.
- a laminar flow of the processing fluid from the (+ Y) side to the ( ⁇ Y) side is formed in each of the upper part of the substrate S and the lower part of the support tray 15.
- the transfer unit 30 is responsible for transferring the substrate S between the external transfer device and the support tray 15.
- the transfer unit 30 includes a main body 31, an elevating member 33, a base member 35, and a plurality of lift pins 37.
- the elevating member 33 is a columnar member extending in the Z direction, and is movably supported in the Z direction with respect to the main body 31 by a support mechanism (not shown).
- a base member 35 having a substantially horizontal upper surface is attached to the upper part of the elevating member 33.
- a plurality of lift pins 37 are erected upward from the upper surface of the base member 35.
- Each of the lift pins 37 supports the substrate S in a horizontal posture from below by abutting the upper end portion thereof on the lower surface of the substrate S. In order to stably support the substrate S in the horizontal posture, it is desirable that three or more lift pins 37 having the same height of the upper ends thereof are provided.
- the elevating member 33 can be moved up and down by the elevating mechanism 51 provided in the supply unit 50.
- the elevating mechanism 51 has, for example, a linear motor, a linear motion guide, a ball screw mechanism, a solenoid, an air cylinder, or the like, and such a linear motion mechanism moves the elevating member 33 in the Z direction. Move to.
- the elevating mechanism 51 operates in response to a control command from the control unit 90.
- the base member 35 moves up and down by raising and lowering the elevating member 33, and a plurality of lift pins 37 move up and down integrally with the base member 35.
- the transfer of the substrate S between the transfer unit 30 and the support tray 15 is realized. More specifically, as shown by the dotted line in FIG. 1, the substrate S is delivered with the support tray 15 pulled out of the chamber.
- the support tray 15 is provided with a through hole 152 for inserting the lift pin 37.
- the base member 35 rises, the upper end of the lift pin 37 reaches above the support surface 151 of the support tray 15 through the through hole 152. In this state, the substrate S transported by the external transport device is delivered to the lift pin 37.
- the lift pin 37 is lowered, the substrate S is transferred from the lift pin 37 to the support tray 15.
- the substrate S can be carried out by the reverse procedure of the above.
- FIG. 2 is a flowchart showing an outline of the processing executed by this substrate processing apparatus.
- the substrate processing apparatus 1 executes a supercritical drying process, that is, a process of drying the substrate S washed with the cleaning liquid in the previous step. Specifically, it is as follows.
- the substrate S to be processed is cleaned with a cleaning liquid in a pre-process executed by another substrate processing apparatus constituting the substrate processing system. After that, the substrate S is transferred to the substrate processing apparatus 1 in a state where a liquid film made of an organic solvent such as isopropyl alcohol (IPA) is formed on the surface.
- IPA isopropyl alcohol
- the pattern when a fine pattern is formed on the surface of the substrate S, the pattern may collapse due to the surface tension of the liquid remaining on the substrate S. In addition, watermarks may remain on the surface of the substrate S due to incomplete drying. Further, when the surface of the substrate S comes into contact with the outside air, deterioration such as oxidation may occur. In order to avoid such a problem, the surface of the substrate S (pattern forming surface) may be transported in a state of being covered with a liquid or solid surface layer.
- the cleaning liquid when it contains water as a main component, it is conveyed in a state where a liquid film is formed by a liquid having a lower surface tension and less corrosiveness to the substrate, for example, an organic solvent such as IPA or acetone. Is executed. That is, the substrate S is conveyed to the substrate processing device 1 in a state where it is supported in a horizontal state and a liquid film is formed on the upper surface thereof.
- IPA is used as an example of the liquid film material.
- the substrate S transported by a transport device is housed in the processing chamber 12 (step S101). Specifically, the substrate S is conveyed with the pattern forming surface on the upper surface and the upper surface covered with a thin liquid film. As shown by the dotted line in FIG. 1, the lift pin 37 is raised while the lid member 13 moves to the (-Y) side and the support tray 15 is pulled out. The transport device delivers the substrate S to the lift pin 37. When the lift pin 37 is lowered, the substrate S is placed on the support tray 15. When the support tray 15 and the lid member 13 move integrally in the (+ Y) direction, the support tray 15 that supports the substrate S is housed in the processing space SP in the processing chamber 12, and the opening 121 is closed by the lid member 13. Will be done.
- step S102 carbon dioxide as the processing fluid is introduced into the processing space SP in the gas phase state.
- outside air enters the processing space SP when the substrate S is carried in, it can be replaced by introducing a gas phase processing fluid. Further, by injecting the gas phase processing fluid, the pressure in the processing chamber 12 rises.
- the processing fluid is continuously discharged from the processing space SP. That is, even while the processing fluid is being introduced by the fluid supply unit 57, the processing fluid is discharged from the processing space SP by the fluid recovery unit 55. As a result, the treatment fluid subjected to the treatment is discharged without flowing into the treatment space SP, and impurities such as residual liquid incorporated in the treatment fluid are prevented from reattaching to the substrate S.
- the density of the processing fluid in the processing space SP increases and the chamber internal pressure rises.
- the supply amount of the processing fluid is smaller than the discharge amount, the density of the processing fluid in the processing space SP decreases and the inside of the chamber is depressurized.
- the processing fluid When the pressure of the processing fluid rises in the processing space SP and exceeds the critical pressure, the processing fluid becomes a supercritical state in the chamber. That is, the phase change in the processing space SP causes the processing fluid to transition from the gas phase to the supercritical state.
- the processing fluid in the supercritical state may be supplied from the outside.
- the liquid component (IPA) adhering to the substrate S can be dissolved in the fluid and separated from the substrate S. ..
- This "predetermined time” is preset as a time required to reliably replace the liquid component adhering to the substrate S with the processing fluid and discharge it to the outside of the chamber.
- the liquid component separated from the substrate S is discharged to the outside of the chamber together with the processing fluid. In this way, the liquid component remaining on the substrate S is completely removed.
- the processing fluid in the processing space SP is discharged to dry the substrate S.
- the pressure inside the processing chamber 12 filled with the processing fluid in the supercritical state is reduced (step S104).
- the supply of the processing fluid may be stopped, or a small amount of the processing fluid may be continuously supplied.
- the processing fluid undergoes a phase change from the supercritical state to become a gas phase.
- the substrate S becomes a dry state.
- the decompression rate is adjusted so that a solid phase and a liquid phase are not generated due to a sudden temperature drop.
- the processing fluid in the processing space SP is directly vaporized from the supercritical state and discharged to the outside. Therefore, it is avoided that a gas-liquid interface is formed on the substrate S whose surface is exposed after drying.
- the liquid adhering to the substrate S is efficiently discharged by filling the processing space SP with the processing fluid in the supercritical state and then changing the phase to the gas phase and discharging. It can be replaced to prevent it from remaining on the substrate S.
- the substrate can be dried while avoiding problems caused by the formation of the gas-liquid interface such as contamination of the substrate due to adhesion of impurities and collapse of the pattern.
- the processed substrate S is dispensed to a subsequent process (step S105). That is, when the lid member 13 moves in the ( ⁇ Y) direction, the support tray 15 is pulled out from the processing chamber 12, and the substrate S is delivered to the external transfer device via the transfer unit 30. At this time, the substrate S is in a dry state.
- the content of the post-process is arbitrary. If there is no substrate to be processed next (NO in step S106), the processing ends. If there is another substrate to be processed (YES in step S106), the process returns to step S101, the new substrate S is accepted, and the above processing is repeated.
- the tact time can be shortened by doing the following. That is, after the support tray 15 is pulled out and the processed substrate S is carried out, the unprocessed substrate S is newly placed, and then the support tray 15 is housed in the processing chamber 12. Further, by reducing the number of times the lid member 13 is opened and closed in this way, it is possible to obtain the effect of suppressing the temperature change in the processing chamber 12 due to the intrusion of outside air.
- the higher the density of the supercritical fluid the higher the replacement efficiency.
- the density of supercritical fluid changes greatly with temperature. Specifically, the higher the temperature, the lower the density. Therefore, it is preferable that the temperature is low in order to obtain a high-density supercritical fluid. In this sense, it is desirable that the temperature is close to the critical temperature, but a slight temperature change causes a phase transition to the gas phase or liquid phase. Therefore, it is desirable that the temperature in the processing chamber 12 is as constant as possible.
- the supercritical fluid is carbon dioxide
- the critical temperature is close to normal temperature (about 31 ° C.), so that the temperature change due to the influence of the outside air may impair the stability of the treatment.
- the support tray 15 has a built-in heater 155 for heating the inside of the processing chamber 12.
- the temperature of the introduced processing fluid and the temperature of the support tray 15 are not completely the same, and the temperature of the processing fluid itself also fluctuates due to compression and expansion during processing. Further, it is not easy to keep the temperature in the processing chamber 12 constant because the temperature changes due to the intrusion of outside air each time the lid member 13 is opened and closed.
- the temperature control in the processing chamber 12 in the present embodiment will be described.
- FIG. 3 is a phase diagram showing a phase change in supercritical processing.
- a processing fluid previously set to a supercritical state may be introduced into the processing chamber.
- the density of supercritical fluid changes greatly due to changes in temperature and pressure, it is realistic to introduce it in the liquid phase or gas phase, which is easier to handle. That is, the treatment fluid is introduced in the gas phase or the liquid phase and undergoes a phase transition to a supercritical state in the chamber.
- various modes of pressure and temperature change of the processing fluid can be considered.
- the white circles indicate the critical points of carbon dioxide, which is the processing fluid of this embodiment.
- the symbols Pc and Tc represent the critical pressure and the critical temperature, respectively.
- the point P is a point indicating the target pressure and temperature in the supercritical treatment. From the viewpoint of processing efficiency, it is preferable that the point P is close to the critical point (white circle).
- Arrows a and b correspond to cases where a liquid phase processing fluid is introduced. More specifically, the arrow a indicates a case where a liquid processing fluid having a pressure higher than the critical pressure Pc and a temperature lower than the critical temperature Tc is heated in the chamber to shift to a supercritical state. Further, the arrow b indicates a case where a liquid processing fluid having a pressure lower than the critical pressure Pc and a temperature lower than the critical temperature Tc is pressurized and heated in the chamber to shift to a supercritical state. In either case, the pressure and temperature are controlled so that no phase transition to the gas phase occurs.
- the arrows c and d correspond to the case where the gas phase processing fluid is introduced. More specifically, the arrow c indicates a case where a gaseous processing fluid having a pressure lower than the critical pressure Pc and a temperature lower than the critical temperature Tc is pressurized and heated in the chamber to shift to a supercritical state. Further, the arrow d indicates a case where a gaseous processing fluid having a pressure lower than the critical pressure Pc and a temperature higher than the critical temperature Tc is pressurized in the chamber to shift to a supercritical state. In either case, the pressure and temperature are controlled so that no phase transition to the liquid phase occurs.
- FIG. 4 is a timing chart showing a state change of each part in the supercritical processing of the present embodiment.
- the supercritical treatment of the present embodiment includes each treatment step of substrate storage, treatment fluid introduction, chamber decompression, and substrate unloading.
- the processed substrates are carried out, and then a new unprocessed substrate is accommodated and the processing is repeated.
- the fluid in the processing chamber 12 changes in the order of atmosphere (open), gas phase or liquid phase processing fluid, supercritical processing fluid, gas phase processing fluid, and atmosphere.
- the temperature and pressure in the processing chamber 12 also fluctuate.
- the temperature change in this treatment process is relatively small because the critical temperature Tc is relatively close to normal temperature.
- the temperature Ta in the supercritical state may be higher than the critical temperature Tc (FIG. 3), and may be higher or lower than the critical temperature Tc for other periods.
- the pressure inside the chamber changes significantly from the atmospheric pressure Pa to the pressure exceeding the critical pressure Pc.
- the chamber is filled with the supercritical processing fluid. Since it is not so difficult to simply maintain the temperature in the chamber higher than the critical temperature Tc, it is mainly the change in pressure that determines whether or not the fluid in the chamber is in the supercritical state.
- the pressure of the fluid in the chamber is determined by the supply / discharge balance of the processing fluid, that is, the relationship between the supply amount of the processing fluid supplied from the fluid supply unit 57 and the discharge amount of the processing fluid discharged to the fluid recovery unit 55.
- the temperature suitable for the treatment it is not always necessary to raise or lower the temperature inside the chamber, but it is desirable that the temperature suitable for the treatment is maintained. In that sense, it is preferable that the temperature change is small, and for example, the temperature may be extremely constant at all times. Further, it is desirable that the temperature in the processing chamber 12 and the support tray 15 when the substrate S is accommodated is the same every time, particularly from the viewpoint of the stability of the processing result in the continuous processing on a plurality of substrates.
- the temperature inside the chamber depends on the temperature of the fluid introduced into the chamber, and is also affected by temperature fluctuations caused by the expansion and contraction of the fluid in the pressurizing and depressurizing processes during processing. In order to reduce the temperature change due to these influences, the heater 155 built in the support tray 15 is used.
- a heater is provided in or around the chamber in order to maintain the temperature in the chamber. That is, a technique for suppressing the influence of temperature changes of the outside air and fluid by heating a processing chamber and a support tray having a large heat capacity has been put into practical use. In that case, as shown by the reference numeral (a) in FIG. 4, it is considered that the heater is always on in order to stabilize the temperature.
- FIG. 5A and 5B are diagrams schematically showing the flow of the processing fluid in the processing chamber.
- laminar flows Fa and Fb of the supercritical processing fluid flowing from the (+ Y) side to the ( ⁇ Y) side are respectively above the substrate S and below the support tray 15. It is desirable to be formed. However, if the temperature of the support tray 15 heated by the heater 155 at this time is higher than the temperature of the processing fluid, particularly the processing fluid flowing below the support tray 15, the processing fluid will be heated.
- the heater 155 is turned off during the supercritical treatment, and the heating of the support tray 15 by the heater 155 is temporarily stopped. This avoids the generation of turbulence due to the heater 155 raising the temperature of the processing fluid.
- the temperature of the support tray 15 after the heater is turned off approaches the temperature of the processing fluid to be introduced.
- the heater 155 may be turned off at least while the chamber is filled with the supercritical fluid, that is, from time T2 to T4. At the timing when the processing fluid undergoes a phase transition to the supercritical state, the supercritical fluid and the liquid adhering to the substrate S coexist. At this time, the situation where the processing fluid is heated and turbulence is generated must be surely avoided from the viewpoint of preventing contamination of the substrate.
- the heater 155 can be turned off at the time T1 when the introduction of the processing fluid is started. Further, for example, the heater 155 may be turned off immediately after the lid member 13 is closed.
- the end of the heater off that is, the timing to turn on the turned off heater 155 again can be considered as follows.
- the heater 155 remains off until at least the replacement of the liquid component by the supercritical fluid on the substrate S is completed, and more strictly, until the liquid component separated from the substrate S is discharged from the processing space SP. It is preferable to be done.
- turbulence generated by convection can cause contamination of the substrate S.
- turbulence does not necessarily cause contamination after the liquid component has been discharged.
- the heater heating may be restarted.
- the heater 155 may be turned on earlier than the time T4 at which the processing fluid in the chamber undergoes a phase transition from the supercritical state to the gas phase.
- the method of stopping the heat generation of the heater 155 at the initial stage of the supercritical treatment does not require completely stopping the operation of the heater 155.
- the heating target temperature of the heater 155 is set to be sufficiently lower than the ambient temperature, it is possible to substantially stop the heat generation from the heater 155.
- the heat generation can be stopped by setting the target temperature lower than the temperature of the processing fluid to be introduced.
- the heater 155 may be continuously energized. By maintaining the heater 155 built in the support tray 15 at a certain temperature, it is possible to raise the temperature of the support tray 15 immediately when necessary.
- the heating target temperature by the heater 155 can be a little lower than this, for example, about 40 ° C. However, it is not limited to these temperatures.
- FIGS. 6A and 6B are diagrams showing examples of other arrangements of heaters.
- the heater 155 of the above embodiment is embedded in the support tray 15 and heats the inside of the chamber via the support tray 15.
- the heater 155a is provided in a state of being exposed on the lower surface of the support tray 15. With such a configuration, it is possible to heat the support tray 15 and the inside of the processing chamber 12. Also in this case, since the heater 155a can generate turbulent flow by heating the processing fluid flowing downward, the same heater control as described above is effective.
- the processing chamber 12 is provided with the heater 155b. More specifically, the heater 155b is provided in the processing chamber 12 at a position corresponding to the bottom surface of the processing space SP. Also in this case, turbulence may occur by heating the processing fluid flowing between the heater 155b and the support tray 15, so that the same heater control as described above is effective.
- the heating effect of the heater 155b on the support tray 15 is low. Especially when the support tray 15 is pulled out of the chamber, it is not heated.
- the heater is arranged on the support tray 15, the inside of the chamber is not heated when the support tray 15 is pulled out of the chamber.
- the support tray 15 is used. It is rational to provide a heater in the.
- the processing chamber 12, the support tray 15, and the heater 155 are the "chamber”, “support tray”, and “heater” of the present invention, respectively. Is functioning as.
- the fluid supply unit 57 and the fluid recovery unit 55 collectively function as the "supply / discharge unit” of the present invention.
- the control unit 90 and the temperature control unit 59 are integrated to function as the "control unit” of the present invention.
- carbon dioxide corresponds to the "treatment fluid” of the present invention
- an organic solvent such as IPA forming a liquid film on the carried-in substrate S corresponds to the "replacement target liquid” of the present invention.
- the substrate processing apparatus 1 of the above embodiment may further include a heater provided on the outer surface of the processing chamber 12 or embedded in a housing block of the processing chamber 12. By preheating the processing chamber with such a heater, it is possible to further reduce the temperature change in the processing space in a series of supercritical processing.
- the temperature of the processing chamber is preferably set to, for example, about 30 ° C. so as not to be higher than the processing fluid.
- the heating target temperature when the heater is turned on is fixed, but if necessary, this may be changed in multiple stages.
- the target temperature may be different when the support tray 15 is inside the processing space SP and when it is outside.
- the heating target temperature may be set lower than other timings in order to promote cooling of the substrate S.
- the tact time is shortened by carrying in the next unprocessed board immediately after the treated board is carried out.
- the same heater control as described above is possible even in a sequence in which the lid member is closed once after the substrate is carried out. That is, the heater may be turned on when the lid member is opened and closed, and the heater may be turned off before the inside of the chamber becomes a supercritical state.
- the supply / discharge unit continues to be in a state where the processing space is filled with the processing fluid in a supercritical state for a certain period of time. Later, the processing fluid may be drained to dry the substrate and the control unit may be configured to stop heating at least for a period of time when the processing space is filled with the supercritical processing fluid. According to such a configuration, it is possible to prevent the temperature of the processing fluid from being changed due to the heat generation of the heater over the entire period in which the processing space is filled with the processing fluid in the supercritical state.
- the control unit completes the replacement of the replacement target liquid remaining in the processing space with the processing fluid. It may be configured to stop the heating until the heating is stopped.
- the problem caused by heating the processing fluid in the supercritical state is that the turbulent flow generated by the heating causes contaminants to adhere to the substrate.
- the effect of the present invention can be obtained by stopping the heater heating until the replacement of the liquid to be replaced, which can be a pollutant, is completed.
- control unit may start heating after the replacement of the liquid to be replaced is completed. By doing so, it is possible to suppress the temperature drop after the treatment.
- the processing fluid undergoes a phase transition to the gas phase without passing through the liquid phase. Heating by a heater can be used for the purpose of preventing a rapid temperature drop of the processing fluid and avoiding a phase transition to the liquid phase.
- the processing space is depressurized to dry the substrate in the supply / discharge unit, and the supply / discharge unit is used in the control unit.
- the heating may be started before the depressurization of the treatment space is started.
- the temperature may drop due to the rapid expansion of the processing fluid during depressurization, and such temperature drop can be suppressed by heating the heater.
- the supply / discharge unit supplies the processing fluid of the gas phase or the liquid phase to the chamber, and the control unit heats the processing fluid before it is converted into a supercritical state in the processing space. It is preferable to stop. At the initial stage of such supercritical treatment, it is considered that substances that are a source of contamination of the substrate remain in the treatment space. By stopping the heater heating at such a stage and suppressing the generation of turbulent flow of the processing fluid, it is possible to prevent the residual substance from adhering to the substrate.
- this substrate processing apparatus has a flat plate shape on which a substrate can be placed, and further includes a support tray for moving the substrate in and out of the chamber by moving back and forth with respect to the processing space, and the heater is placed on the support tray. It may be provided. With such a configuration, it is possible to prevent the temperature of the support tray from dropping when the support tray is outside the chamber.
- control unit may substantially stop the heating by setting the heating target temperature by the heater to a temperature lower than the temperature of the processing fluid. That is, in the present invention, it is sufficient that the heat generated by the heater does not raise the temperature of the processing fluid, and it is not necessary to stop the operation of the heater itself.
- the substrate processing method when the treated substrate that has been processed by the processing fluid is carried out from the chamber and then the unprocessed substrate is newly carried into the chamber and the treatment by the processing fluid is executed.
- the heating may be continuously performed from the start of carrying out the treated substrate to the end of carrying in the untreated substrate. In the case of sequentially processing a plurality of substrates in this way, it is possible to prevent a temperature drop in the chamber by continuously heating with a heater while the substrates are replaced.
- the present invention can be applied to a general substrate processing apparatus that processes a substrate using a supercritical processing fluid introduced into a chamber.
- a substrate drying process for drying a substrate such as a semiconductor substrate with a supercritical fluid.
- Substrate processing equipment 12 Processing chamber (chamber) 15 Support tray 55 Fluid recovery section (supply / discharge section) 57 Fluid supply section (supply / discharge section) 59 Temperature control unit (control unit) 90 Control unit (control unit) 155,155a, 155b Heater S board SP processing space
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Abstract
Description
12 処理チャンバ(チャンバ)
15 支持トレイ
55 流体回収部(給排部)
57 流体供給部(給排部)
59 温度調整部(制御部)
90 制御ユニット(制御部)
155,155a,155b ヒータ
S 基板
SP 処理空間
Claims (10)
- 超臨界状態の処理流体により基板を処理する基板処理装置において、
前記基板を収容可能な処理空間を内部に有するチャンバと、
前記処理空間に対し前記処理流体の供給および排出を行う給排部と、
前記チャンバ内で前記基板よりも下方に配置されて、前記チャンバ内を加熱するヒータと、
前記ヒータを制御する制御部と
を備え、
前記制御部は、前記処理空間に超臨界状態の前記処理流体が導入される時から所定の期間については前記ヒータによる加熱を停止させる基板処理装置。 - 前記給排部は、前記処理空間内が超臨界状態の前記処理流体で満たされた状態が一定時間継続された後に、前記処理流体を排出して前記基板を乾燥させ、
前記制御部は、少なくとも前記処理空間が超臨界状態の前記処理流体で満たされている期間、前記加熱を停止させる請求項1に記載の基板処理装置。 - 前記基板に付着した置換対象液を前記処理流体により置換して前記基板を乾燥させる請求項1に記載の基板処理装置であって、
前記制御部は、前記処理空間に残留する前記置換対象液の前記処理流体による置換が完了するまでの間、前記加熱を停止させる基板処理装置。 - 前記制御部は、前記置換対象液の置換が完了した後、前記加熱を開始させる請求項3に記載の基板処理装置。
- 前記給排部は、前記処理空間内が超臨界状態の前記処理流体で満たされた状態が一定時間継続された後に、前記処理空間を減圧して前記基板を乾燥させ、
前記制御部は、前記給排部が前記処理空間の減圧を開始するよりも前に、前記加熱を開始させる請求項1に記載の基板処理装置。 - 前記給排部は、気相または液相の前記処理流体を前記チャンバに供給し、
前記制御部は、前記処理流体が前記処理空間で超臨界状態に転換するよりも前に前記加熱を停止させる請求項1ないし5のいずれかに記載の基板処理装置。 - 上部に前記基板を載置可能な平板形状を有し、前記処理空間に対し進退移動することで前記基板を前記チャンバに対し出し入れする支持トレイを備え、
前記ヒータが前記支持トレイに設けられている請求項1ないし6のいずれかに記載の基板処理装置。 - 前記制御部は、前記ヒータによる加熱目標温度を前記処理流体の温度よりも低い温度に設定することで、実質的に前記加熱を停止させる請求項1ないし7のいずれかに記載の基板処理装置。
- チャンバ内の処理空間で、超臨界状態の処理流体により基板を処理する基板処理方法において、
前記チャンバ内で前記基板よりも下方に、前記チャンバ内を加熱するヒータを配置し、
前記処理空間に前記基板を搬入するとともに前記ヒータによる加熱を行い、
前記処理流体を前記処理空間に供給して、前記処理空間を超臨界状態の前記処理流体により満たした後、前記処理流体を前記処理空間から排出し、
前記処理空間に超臨界状態の前記処理流体が導入される時から所定の期間については、前記加熱を停止する基板処理方法。 - 前記処理流体による処理が終了した処理済み基板を前記チャンバから搬出した後、新たに未処理基板を前記チャンバに搬入して前記処理流体による処理を実行し、
前記処理済み基板の搬出を開始してから前記未処理基板の搬入を終了するまでの間、継続して前記加熱を行う請求項9に記載の基板処理方法。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09232271A (ja) * | 1996-02-20 | 1997-09-05 | Sharp Corp | 半導体ウェハの洗浄装置 |
JP2003282510A (ja) * | 2002-03-20 | 2003-10-03 | Nippon Telegr & Teleph Corp <Ntt> | 超臨界処理方法及び超臨界処理装置 |
WO2012165377A1 (ja) * | 2011-05-30 | 2012-12-06 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09232271A (ja) * | 1996-02-20 | 1997-09-05 | Sharp Corp | 半導体ウェハの洗浄装置 |
JP2003282510A (ja) * | 2002-03-20 | 2003-10-03 | Nippon Telegr & Teleph Corp <Ntt> | 超臨界処理方法及び超臨界処理装置 |
WO2012165377A1 (ja) * | 2011-05-30 | 2012-12-06 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
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CN116783686A (zh) | 2023-09-19 |
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