WO2022141177A1 - 传感器件及显示装置 - Google Patents

传感器件及显示装置 Download PDF

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Publication number
WO2022141177A1
WO2022141177A1 PCT/CN2020/141334 CN2020141334W WO2022141177A1 WO 2022141177 A1 WO2022141177 A1 WO 2022141177A1 CN 2020141334 W CN2020141334 W CN 2020141334W WO 2022141177 A1 WO2022141177 A1 WO 2022141177A1
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Prior art keywords
layer
touch
electrode
substrate
disposed
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PCT/CN2020/141334
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English (en)
French (fr)
Inventor
查宝
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深圳市华星光电半导体显示技术有限公司
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Priority to US17/262,086 priority Critical patent/US11740746B2/en
Publication of WO2022141177A1 publication Critical patent/WO2022141177A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/016—Input arrangements with force or tactile feedback as computer generated output to the user
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/0304—Detection arrangements using opto-electronic means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate

Definitions

  • the present invention relates to the field of display technology, and in particular, to a sensor device and a display device.
  • the touch element is mainly integrated in the display panel or disposed on the display panel to form a touch-enabled display device.
  • a new sensor device needs to be integrated in the display panel to make up for the deficiency of a single-function touchable display device.
  • Embodiments of the present invention provide a sensor device and a display device for realizing the functions of short-range touch and remote light control, so as to make up for the insufficiency of single-function touch or light control.
  • An embodiment of the present invention provides a sensor device, including:
  • the light control assembly is disposed on the substrate;
  • the touch control component is disposed on the substrate, and the touch control component is located on one side of the light control component;
  • a functional medium layer is disposed on the side away from the substrate and covers at least the touch-control component, and the functional medium layer is used to communicate with the external object when the external object is in contact with the functional medium layer
  • An electrostatic force is applied, wherein the electrostatic force is positively correlated with the voltage value of the touch element, the contact area of the external object with the functional medium layer, and the dielectric constant of the functional medium layer.
  • the dielectric constant of the functional medium layer is greater than or equal to 2.5.
  • the thickness of the functional medium layer is between 1 ⁇ m and 200 ⁇ m.
  • the material of the functional medium layer includes polyvinylidene fluoride, polyphenylene sulfide, ethylene/vinyl alcohol copolymer, polyphthalamide, polyamide-imide, At least one of polyamide, polyetherimide, polymethyl methacrylate, and polyethylene terephthalate.
  • the light control component includes a photosensitive thin film transistor and a switching thin film transistor, and the photosensitive thin film transistor and the switching thin film transistor are arranged in the same layer;
  • the switching thin film transistor includes a first active layer, a first gate electrode, a first source electrode and a first drain electrode, wherein the first gate electrode is arranged on the substrate, and the first source electrode and the first drain electrode are arranged on the substrate. the first drain electrodes are respectively electrically connected to the first active layer;
  • the photosensitive thin film transistor includes a second gate electrode, a second active layer, a second source electrode and a second drain electrode, wherein the second gate electrode and the first gate electrode are arranged in the same layer, and the second gate electrode and the first gate electrode are arranged in the same layer.
  • the active layer and the first active layer are arranged in the same layer, and the second source electrode, the second drain electrode, the first source electrode and the first drain electrode are arranged in the same layer.
  • the sensing device further includes:
  • a light shielding layer is provided on the switching thin film transistor, and the orthographic projection of the light shielding layer on the substrate is greater than the orthographic projection of the switching thin film transistor on the substrate.
  • the sensing device further includes a gate insulating layer and a passivation layer that are sequentially stacked on the substrate;
  • the touch component includes a first touch electrode and a second touch electrode, and the first touch electrode and the second touch electrode are arranged in the same layer or different layers.
  • the first touch electrodes and the second touch electrodes are in the same layer and are disposed on the passivation layer at intervals, and any two adjacent first touch electrodes are disposed on the passivation layer at intervals.
  • the control electrodes are electrically connected, and any two adjacent second touch electrodes are connected through a bridge portion.
  • the first touch electrode is disposed on the gate insulating layer, and the second touch electrode is disposed on the passivation layer.
  • the first touch electrodes and the second touch electrodes are disposed on the gate insulating layer, wherein any two adjacent second touch electrodes are The electrodes are connected by bridges.
  • the sensing device further includes:
  • planarization layer is disposed between the passivation layer and the functional medium layer.
  • An embodiment of the present invention further provides a display device, including a sensor device and a display panel, the sensor device being integrated in the display panel or disposed on the display panel, and the sensor device comprising:
  • the light control assembly is disposed on the substrate;
  • the touch control component is disposed on the substrate, and the touch control component is located on one side of the light control component;
  • a functional medium layer is disposed on the side away from the substrate and covers at least the touch-control component, and the functional medium layer is used to communicate with the external object when the external object is in contact with the functional medium layer
  • An electrostatic force is applied, wherein the electrostatic force is positively correlated with the voltage value of the touch element, the contact area of the external object with the functional medium layer, and the dielectric constant of the functional medium layer.
  • the dielectric constant of the functional medium layer is greater than or equal to 2.5.
  • the thickness of the functional medium layer is between 1 micrometer and 200 micrometers.
  • the material of the functional medium layer includes polyvinylidene fluoride, polyphenylene sulfide, ethylene/vinyl alcohol copolymer, polyphthalamide, polyamide-imide, At least one of polyamide, polyetherimide, polymethyl methacrylate, and polyethylene terephthalate.
  • the light control component includes a photosensitive thin film transistor and a switching thin film transistor, and the photosensitive thin film transistor and the switching thin film transistor are arranged in the same layer;
  • the switching thin film transistor includes a first active layer, a first gate electrode, a first source electrode and a first drain electrode, wherein the first gate electrode is arranged on the substrate, and the first source electrode and the first drain electrode are arranged on the substrate. the first drain electrodes are respectively electrically connected to the first active layer;
  • the photosensitive thin film transistor includes a second gate electrode, a second active layer, a second source electrode and a second drain electrode, wherein the second gate electrode and the first gate electrode are arranged in the same layer, and the second gate electrode and the first gate electrode are arranged in the same layer.
  • the active layer and the first active layer are arranged in the same layer, and the second source electrode, the second drain electrode, the first source electrode and the first drain electrode are arranged in the same layer.
  • the sensing device further includes:
  • a light shielding layer is provided on the switching thin film transistor, and the orthographic projection of the light shielding layer on the substrate is greater than the orthographic projection of the switching thin film transistor on the substrate.
  • the sensing device further includes a gate insulating layer and a passivation layer that are sequentially stacked on the substrate;
  • the touch component includes a first touch electrode and a second touch electrode, and the first touch electrode and the second touch electrode are arranged in the same layer or different layers.
  • the first touch electrode and the second touch electrode are disposed on the passivation layer in the same layer and spaced apart, and any two adjacent first touch electrodes are disposed on the passivation layer.
  • the control electrodes are electrically connected, and any two adjacent second touch electrodes are connected through a bridge portion.
  • the first touch electrode is disposed on the gate insulating layer, and the second touch electrode is disposed on the passivation layer.
  • the embodiment of the present invention simultaneously integrates a light control component as a light control sensor and a touch control component as a tactile sensor in the sensor device to realize the functions of short-range touch and remote light control, and make up for the insufficiency of single-function touch or light control .
  • the embodiment of the present invention uses the functional medium layer as the insulating layer on the touch component.
  • the first touch electrode and the second touch electrode at the touch position are capacitively coupled with the external object, and then Then, the two poles of the capacitor are formed with the ground respectively, so as to realize touch sensing. Since the dielectric constant of the functional medium layer is sufficiently large, when an external object touches the functional medium layer, a larger friction force is generated on the surface thereof, thereby achieving a better haptic feedback effect.
  • FIG. 1 is a schematic structural diagram of a display device provided by an embodiment of the present invention.
  • FIGS. 2 to 6 are schematic structural diagrams of a sensing device provided by an embodiment of the present invention.
  • FIG. 7 is a top view of a touch component according to an embodiment of the present invention.
  • FIG. 8 is another top view of the touch component in the sensor device provided by the embodiment of the present invention.
  • FIG. 9 is a circuit diagram of a light control assembly provided by an embodiment of the present invention.
  • first and second are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, features defined as “first”, “second” may expressly or implicitly include one or more of said features. In the description of the present application, “plurality” means two or more, unless otherwise expressly and specifically defined.
  • the terms “installed”, “connected” and “connected” should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be internal communication between two elements.
  • installed should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be internal communication between two elements.
  • an embodiment of the present invention provides a display device, wherein the display device 20 includes a sensor device 10 and a display panel 200 , wherein the sensor device 10 is integrated in the display panel 200 or disposed on the display panel 200 .
  • the display device 20 further includes an optical adhesive layer 210 , and the optical adhesive layer 210 is used for adhering the display panel 200 and the sensor device 10 .
  • the display panel 200 includes a liquid crystal display, an organic light emitting diode display panel, a quantum dot light emitting diode display panel, a Mini LED display panel, a Micro LED display panel, and the like.
  • the liquid crystal display can be a color filter on an array substrate (Color Filter On Array, COA) or a liquid crystal display with a Non-COA structure, and its display modes include twisted nematic (TN), in-plane switching (In-PlaneSwitching, IPS) Type, Vertical Alignment (VA) type and Fringe Field Switching (FFS) type.
  • TN twisted nematic
  • IPS in-plane switching
  • VA Vertical Alignment
  • FFS Fringe Field Switching
  • the sensor device 10 includes a substrate 101 , a light control element 102 , a touch element 103 , a gate insulating layer 104 , a passivation layer 105 , a functional medium layer 106 and a light shielding layer 107 .
  • the touch component 103 is located on one side of the light control component 102 .
  • the functional medium layer 106 is disposed on the side away from the substrate 101 and covers at least the touch element 103 .
  • the functional medium layer 106 is used to apply electrostatic force to the external object when the external object is in contact with the functional medium layer 106 , wherein the electrostatic force is related to the touch control element.
  • the voltage value of the component 103 , the contact area of the external object with the functional dielectric layer 106 , and the dielectric constant of the functional dielectric layer 106 are positively correlated.
  • the external objects refer to objects that can generate capacitance with the touch component 103 , including fingers, palms, and the like.
  • the light control assembly 102 includes a switching thin film transistor 102a and a photosensitive thin film transistor 102b, and the switching thin film transistor 102a and the photosensitive thin film transistor 102b are disposed in the same layer.
  • the light control assembly 102 is used for sensing the external light beam projected on the sensor device 10 .
  • the switching thin film transistor 102 a and the photosensitive thin film transistor 102 b are disposed on the side of the substrate 101 close to the gate insulating layer 104 .
  • the switching thin film transistor 102a includes a first gate electrode 102a1, a first active layer 102a2, a first source electrode 102a3 and a first drain electrode 102a4.
  • the first gate 102a1 is disposed on the side of the substrate 101 close to the gate insulating layer 104 .
  • the first source electrode 102a3 and the first drain electrode 102a4 are respectively electrically connected to the first active layer 102a2.
  • the first active layer 102a2 is provided corresponding to the light shielding layer 107 .
  • the orthographic projection of the light shielding layer 107 on the substrate 101 covers the orthographic projection of the first active layer 102a2 on the substrate 101 .
  • the photosensitive thin film transistor 102b includes a second gate electrode 102b1, a second active layer 102b2, a second source electrode 102b3 and a second drain electrode 102b4.
  • the second gate 102b1 and the first gate 102a1 are disposed in the same layer, and the second gate 102b1 and the first gate 102a1 may be formed through the same mask process.
  • the second active layer 102b2 is disposed in the same layer as the first active layer 102a2.
  • the second source electrode 102b2, the second drain electrode 102b3, the first source electrode 102a3 and the first drain electrode 102a4 are disposed in the same layer.
  • the first active layer 102a2 includes one of a hydrogenated amorphous silicon active layer, a low temperature polysilicon active layer and an oxide active layer
  • the second active layer 102b2 includes a hydrogenated amorphous silicon active layer layer or low temperature polysilicon active layer.
  • the sensing device 10 further includes a gate insulating layer and a passivation layer stacked on the substrate in sequence, and the gate insulating layer 104 covers the substrate 101 , the first gate 102a1 and the second gate 102b1.
  • the passivation layer 105 covers the first active layer 102a2, the first source electrode 102a3, the first drain electrode 102a4, the second active layer 102b2, the second source electrode 102b3, and the second drain electrode 102b4.
  • the passivation layer 105 is an inorganic passivation layer, which includes at least one of silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiN x O y ) and aluminum oxide.
  • the touch component 103 is disposed on the substrate 101, and the touch component 103 includes a first touch electrode 103a and a second touch electrode 103b, and the first touch electrode 103a and the second touch electrode 103b are arranged in the same layer or different layers.
  • FIG. 7 is an embodiment of the present invention.
  • Top view of the touch assembly Any two adjacent first touch electrodes 103a are electrically connected, that is, the first touch electrodes 103a are directly connected. Any two adjacent second touch electrodes 103b are connected by a bridge portion 103b1. Specifically, a part of the bridge portion 103b1 is disposed in the through hole, and another portion of the bridge portion 103b1 is disposed in the passivation layer 105 close to the functional medium layer 106 side.
  • the material of the bridge portion 103b1 includes indium tin oxide.
  • the first touch electrodes 103a and the second touch electrodes 103b may also be embedded and insulated, for example, at least a part of the first touch electrodes 103a is embedded in the second touch electrodes 103b middle.
  • the sensor device 10 in the embodiment of the present invention includes a touch component 103 and a light control component 102 .
  • the short-range touch principle of the sensor device 10 is to utilize the electrostatic force generated between the touch component 103 and the human body to achieve the effect of tactile feedback.
  • the functional medium layer 106 is used as the insulating film layer above the sensing device 10 .
  • frictional force is generated on its surface, thereby generating different tactile sensations.
  • the friction between the human body and the touch component 104 needs to be improved.
  • the formula of the friction is as follows:
  • F is the friction force
  • A is the contact area between the external object (including the finger) and the sensor device 10
  • ⁇ is the relative permittivity of the functional medium layer 106
  • ⁇ 0 is the vacuum permittivity
  • V is the pair
  • the voltage and d applied by the first touch electrodes 103 a and the second touch electrodes 103 b are the thicknesses of the functional medium layer 106 .
  • the polymer film layer is used as the functional medium layer to realize a sensor device with better touch feedback.
  • the dielectric constant of the functional dielectric layer 106 is greater than or equal to 2.5, for example, the dielectric constant of the functional dielectric layer 106 is any one of 2.5, 3, 3.5, 4, 4.5, 5 or 6.
  • the material of the functional medium layer 106 includes polyvinylidene fluoride (PVDF), polyphenylene sulfide (PPS), ethylene/vinyl alcohol copolymer (EVOH), polyphthalamide (PPA), polyamide-imide ( At least one of PAI), polyamide (PA), polyetherimide (PEI), polymethyl methacrylate (PMMA), and polyethylene terephthalate (PET).
  • PVDF polyvinylidene fluoride
  • PPS polyphenylene sulfide
  • EVOH ethylene/vinyl alcohol copolymer
  • PPA polyphthalamide
  • PAI polyamide-imide
  • PMMA polymethyl methacrylate
  • PET polyethylene terephthalate
  • the thickness of the functional medium layer 106 is between 1 ⁇ m and 200 ⁇ m.
  • the thickness of the functional medium layer 106 may be at least one of 1 micron, 1 micron, 10 microns, 30 microns, 55 microns, 80 microns, 100 microns, 125 microns, 145 microns, 1160 microns or 185 microns.
  • the functional medium layer 106 may be disposed at a position corresponding to the touch component 103 , so as to improve the accuracy of the sensing device 10 .
  • the functional medium layer 106 covers the touch component 103 and the light control component 102 .
  • the functional medium layer 106 corresponding to the light control component 102 is used to prevent the switching thin film transistor 102a and the photosensitive thin film transistor 102b from being eroded by water and oxygen.
  • the light shielding layer 107 is disposed on the switching thin film transistor 102a.
  • the orthographic projection of the light shielding layer 107 on the substrate 101 is larger than the orthographic projection of the switching thin film transistor 102 a on the substrate 101 .
  • the first active layer 102a2 is disposed corresponding to the light shielding layer 107 .
  • the orthographic projection of the light shielding layer 107 on the substrate 101 covers the orthographic projection of the first active layer 102a2 on the substrate 101 .
  • Materials of the light shielding layer 107 include metals, metal oxides, polymer materials, and the like.
  • the light shielding layer 107 is used for shielding the external light from irradiating the switching thin film transistor 102a, so as to prevent the first active layer 102a2 from being damaged by the external light.
  • the sensor device 10 provided in this embodiment uses the functional medium layer 106 as an insulating layer on the touch component 103 .
  • the first touch electrode 103 a and the second touch electrode 103 b at the touch position are connected to the touch element 103 .
  • the capacitive coupling of external objects and then form the two poles of the capacitance with the ground respectively, so as to realize touch sensing.
  • the dielectric constant of the functional medium layer 106 is sufficiently large, when an external object touches the functional medium layer 106 , a larger friction force is generated on the surface thereof, thereby achieving a better tactile feedback effect.
  • the sensor device 10 is also integrated with the light control component 102 synchronously, which realizes the functions of short-range touch and remote light control, and makes up for the insufficiency of single-function touch or light control.
  • the sensing device 10 further includes a planarization layer 108 , and the planarization layer 108 is disposed between the passivation layer 105 and the functional medium layer 106 .
  • the material of the planarization layer 108 is an organic material, and the planarization layer 108 can act simultaneously with the functional medium layer 106 to provide electrostatic force for the sensor device 10 .
  • the first touch electrodes 103 a and the second touch electrodes 103 b are disposed on the gate insulating layer 105 in the same layer and spaced apart, and the first touch electrodes 103 a and The second touch electrodes 103b may be formed through the same mask process as the first gate electrodes 102a1 and the second gate electrodes 102b1.
  • any two adjacent first touch electrodes 103a are electrically connected, and any two adjacent second touch electrodes 103b are connected by a bridging portion 103b1, the bridging portion 103b1 penetrates the planarization layer 108, and at least the bridging portion 103b1 A part is disposed on the side of the planarization layer 108 away from the passivation layer 105 .
  • the sensing device 10 may not include the planarization layer 108 , that is, a portion of the bridge portion 103b1 is disposed in the through hole, and another portion of the bridge portion 103b1 is disposed in the gate
  • the insulating layer 104 is close to one side of the passivation layer 105 .
  • the first touch electrodes 103 a are disposed on the gate insulating layer 104 , wherein the first touch electrodes 103 a and the first gate electrodes 102 a 1 can be formed through the same mask process.
  • the second touch electrodes 103b are disposed on the passivation layer 105 .
  • the sensing device in the embodiment of the present invention integrates the functions of light-controlled sensing and touch sensing.
  • the touch sensing adopts the capacitive touch mode, and the capacitive touch is realized by using the change of capacitance generated by the electrostatic coupling between the electrodes and the human finger.
  • the capacitive touch mode includes self-capacitance and mutual capacitance.
  • the touch principle of the self-capacitance mode is as follows: the first touch electrodes 103a and the second touch electrodes 103b are capacitively coupled with the finger to form two poles of a capacitor respectively with the ground , when the finger touches the surface of the sensor device 10 , the capacitance of the finger will be superimposed on the sensor device at the touch position, so that the capacitance increases.
  • the mutual capacitance type Compared with the self-capacitance mode sensing device, the mutual capacitance type has higher sensitivity and accuracy.
  • the working principle of the mutual capacitive sensing device is as follows: the intersecting position of the first touch electrode 103a and the second touch electrode 103b forms a capacitor, that is, the first touch electrode 103a and the second touch electrode 103b respectively constitute two poles of the capacitor, When a finger touches the sensor device 10, the coupling between the two electrodes near the touch point is affected, thereby changing the capacitance between the first touch electrode 103a and the second touch electrode 103b.
  • an embodiment of the present invention defines a first touch electrode 103 a and a second touch electrode 103 b that are fitted and disposed as a touch unit.
  • the first touch electrode 103a includes a first body portion 103aa and a plurality of first coupling portions 103ab, the first body portion 103aa and the first coupling portion 103ab are electrically connected, and the first body portion 103aa and the first coupling portion 103ab are electrically connected.
  • the first coupling portion 103ab is arranged vertically. Specifically, the plurality of first coupling parts 103ab are arranged on both sides of the first main body part 103aa at intervals.
  • the second touch electrode 103b includes a second body portion 103ba and a plurality of second coupling portions 103bb, the second body portion 103ba and the second coupling portion 103bb are electrically connected, and the second body portion 103ba and the second coupling portion 103bb are vertically disposed .
  • the first coupling portion 103ab and the second coupling portion 103bb are insulated from each other and fitted together. It should be understood that, in the embodiment of the present invention, the touch component 103 includes a plurality of touch units, and the plurality of touch units are arranged in an array.
  • the embodiments of the present invention are mainly aimed at synchronously realizing the functions of light control and touch control.
  • the On-glass mode is adopted.
  • a-Si is used as the photosensitive semiconductor material
  • the photosensitive thin film transistor is used as the structure of the light control sensor and the tactile integrated component is used.
  • As a touch sensor synchronously integrated in the display panel it can realize the functions of short-range touch and remote light control, and make up for the insufficiency of single-function touch or light control.
  • the sensor device in the embodiment of the present invention adopts a touch sensor with tactile feedback.
  • the embodiment of the present invention adopts 2T1C, wherein TS is a photosensitive TFT, TD is a switching TFT, and C is a capacitor.
  • the embodiment of the present invention adopts light control sensing and touch sensing to be completed synchronously, and can be integrated into the current display panel synchronously, which can realize the functions of short-range touch and remote light control, and make up for the single-function touch or light control. of inadequacies.
  • the sensor device 10 in the embodiment of the present invention includes a touch component 103 and a light control component 102 .
  • the short-range touch principle of the sensor device 10 is to utilize the electrostatic force generated between the touch element 103 and the human body to achieve the effect of tactile feedback.
  • the functional medium layer 106 is used as the insulating film layer above the sensing device 10 .
  • frictional force is generated on its surface, thereby generating different tactile sensations.
  • the friction between the human body and the touch component 103 needs to be improved.
  • the formula of the friction is as follows:
  • F is the friction force
  • A is the contact area between the human body (including fingers) and the sensor device 10
  • ⁇ is the relative permittivity of the functional dielectric layer 106
  • ⁇ 0 is the vacuum permittivity
  • V is the The voltage applied by one touch electrode 103 a and the second touch electrode 103 b
  • d is the thickness of the functional medium layer 106 .
  • the principle of remote light control in the embodiment of the present invention is: when the sensing device 10 is stimulated by light, the second active layer 102b2 in the photosensitive thin film transistor 102b will generate carriers, and the carriers are collected by the storage capacitor, and then pass through The control of the switching thin film transistor 102a is processed by an amplifier and detected by a chip (IC), thereby displaying the light control function.
  • IC chip
  • the embodiment of the present invention simultaneously integrates a light control component as a light control sensor and a touch control component as a tactile sensor in the sensor device to realize the functions of short-range touch and remote light control, and make up for the insufficiency of single-function touch or light control .
  • the embodiment of the present invention uses the functional medium layer as the insulating layer on the touch component.
  • the first touch electrode and the second touch electrode at the touch position are capacitively coupled with the external object, and then Then, the two poles of the capacitor are formed with the ground respectively, so as to realize touch sensing. Since the dielectric constant of the functional medium layer is sufficiently large, when an external object touches the functional medium layer, a larger friction force is generated on the surface thereof, thereby achieving a better haptic feedback effect.

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Abstract

本发明公开了一种传感器件和显示装置，传感器件包括：基板、光控组件、触控组件以及功能介质层，光控组件和触控组件设置在基板上，触控组件设置在光控组件的一侧；功能介质层设置在远离基板的一面且至少覆盖触控组件，功能介质层用于在外界物体与功能介质层相接触时向外界物体施加静电力。

Description

传感器件及显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种传感器件及显示装置。
背景技术
随着显示技术的发展及在各领域的广泛应用，将各种传感器集成在显示面板内成为一种趋势。
目前，具有触控屏的显示装置主要是将触控元件集成在显示面板内或设置在显示面板上，形成可触控的显示装置。但是，随着用户对显示装置的需求的提高，以及人机交互的发展，有待将一种新的传感器件集成在显示面板内，用于弥补单一功能的可触控的显示装置的不足。
故，有必要提出一种新的技术方案，以解决上述技术问题。
技术问题
本发明实施例提供一种传感器件及显示装置，用于实现短程触控，远程光控的功能，以弥补单一功能的触控或者光控的不足之处。
技术解决方案
本发明实施例提供一种传感器件，包括：
基板；
光控组件，所述光控组件设置在所述基板上；
触控组件，所述触控组件设置在所述基板上，并且，所述触控组件位于所述光控组件的一侧；
功能介质层，所述功能介质层设置在远离所述基板的一面且至少覆盖所述触控组件，所述功能介质层用于在外界物体与所述功能介质层相接触时向所述外界物体施加静电力，其中，所述静电力与所述触控组件的电压值、所述外界物体与所述功能介质层接触的面积以及所述功能介质层的介电常数正相关。
在本发明实施例提供的传感器件中，所述功能介质层的介电常数大于或等于2.5。
在本发明实施例提供的传感器件中，所述功能介质层的厚度介于1微米至200微米之间。
在本发明实施例提供的传感器件中，所述功能介质层的材料包括聚偏氟乙烯、聚苯硫醚、乙烯/乙烯醇共聚物、聚邻苯二甲酰胺、聚酰胺-酰亚胺、聚酰胺、聚醚酰亚胺、聚甲基丙烯酸甲酯、聚对苯二甲酸乙二醇酯中的至少一种。
在本发明实施例提供的传感器件中，所述光控组件包括感光薄膜晶体管和开关薄膜晶体管，所述感光薄膜晶体管和所述开关薄膜晶体管同层设置；
所述开关薄膜晶体管包括第一有源层、第一栅极、第一源极和第一漏极，其中，所述第一栅极设置在所述基板上，所述第一源极和所述第一漏极分别与所述第一有源层电性连接；
所述感光薄膜晶体管包括第二栅极、第二有源层、第二源极和第二漏极，其中，所述第二栅极和所述第一栅极同层设置，所述第二有源层与所述第一有源层同层设置，所述第二源极、所述第二漏极、所述第一源极和所述第一漏极同层设置。
在本发明实施例提供的传感器件中，所述传感器件还包括：
遮光层，所述遮光层设置在所述开关薄膜晶体管上，且所述遮光层在所述基板上的正投影大于所述开关薄膜晶体管在所述基板上的正投影。
在本发明实施例提供的传感器件中，所述传感器件还包括依次层叠设置在所述基板上的栅极绝缘层和钝化层；
所述触控组件包括第一触控电极和第二触控电极，所述第一触控电极和所述第二触控电极同层或异层设置。
在本发明实施例提供的传感器件中，所述第一触控电极和所述第二触控电极同层且间隔设置于所述钝化层上，任意两个相邻的所述第一触控电极电性连接，任意两个相邻的所述第二触控电极通过桥接部相连。
在本发明实施例提供的传感器件中，所述第一触控电极设置于所述栅极绝缘层上，所述第二触控电极设置于所述钝化层上。
在本发明实施例提供的传感器件中，所述第一触控电极和所述第二触控电极设置于所述栅极绝缘层上，其中，任意两个相邻的所述第二触控电极通过桥接部相连。
在本发明实施例提供的传感器件中，所述传感器件还包括：
平坦化层，所述平坦化层设置在所述钝化层和所述功能介质层之间。
本发明实施例还提供一种显示装置，包括传感器件以及显示面板，所述传感器件集成在所述显示面板内或设置在所述显示面板上，所述传感器件包括：
基板；
光控组件，所述光控组件设置在所述基板上；
触控组件，所述触控组件设置在所述基板上，并且，所述触控组件位于所述光控组件的一侧；
功能介质层，所述功能介质层设置在远离所述基板的一面且至少覆盖所述触控组件，所述功能介质层用于在外界物体与所述功能介质层相接触时向所述外界物体施加静电力，其中，所述静电力与所述触控组件的电压值、所述外界物体与所述功能介质层接触的面积以及所述功能介质层的介电常数正相关。
在本发明实施例提供的显示装置中，所述功能介质层的介电常数大于或等于2.5。
在本发明实施例提供的显示装置中，所述功能介质层的厚度介于1微米至200微米之间。
在本发明实施例提供的显示装置中，所述功能介质层的材料包括聚偏氟乙烯、聚苯硫醚、乙烯/乙烯醇共聚物、聚邻苯二甲酰胺、聚酰胺-酰亚胺、聚酰胺、聚醚酰亚胺、聚甲基丙烯酸甲酯、聚对苯二甲酸乙二醇酯中的至少一种。
在本发明实施例提供的显示装置中，所述光控组件包括感光薄膜晶体管和开关薄膜晶体管，所述感光薄膜晶体管和所述开关薄膜晶体管同层设置；
所述开关薄膜晶体管包括第一有源层、第一栅极、第一源极和第一漏极，其中，所述第一栅极设置在所述基板上，所述第一源极和所述第一漏极分别与所述第一有源层电性连接；
所述感光薄膜晶体管包括第二栅极、第二有源层、第二源极和第二漏极，其中，所述第二栅极和所述第一栅极同层设置，所述第二有源层与所述第一有源层同层设置，所述第二源极、所述第二漏极、所述第一源极和所述第一漏极同层设置。
在本发明实施例提供的显示装置中，所述传感器件还包括：
遮光层，所述遮光层设置在所述开关薄膜晶体管上，且所述遮光层在所述基板上的正投影大于所述开关薄膜晶体管在所述基板上的正投影。
在本发明实施例提供的显示装置中，所述传感器件还包括依次层叠设置在所述基板上的栅极绝缘层和钝化层；
所述触控组件包括第一触控电极和第二触控电极，所述第一触控电极和所述第二触控电极同层或异层设置。
在本发明实施例提供的显示装置中，所述第一触控电极和所述第二触控电极同层且间隔设置于所述钝化层上，任意两个相邻的所述第一触控电极电性连接，任意两个相邻的所述第二触控电极通过桥接部相连。
在本发明实施例提供的显示装置中，所述第一触控电极设置于所述栅极绝缘层上，所述第二触控电极设置于所述钝化层上。
有益效果
本发明实施例在传感器件中同步集成了光控组件作为光控传感器，触控组件作为触觉传感器，实现短程触控，远程光控的功能，弥补单一功能的触控或者光控的不足之处。
另外，本发明实施例利用功能介质层作为触控组件上的绝缘层，当外界物体触摸功能介质层时，触摸位置的第一触控电极和第二触控电极与外界物体的电容耦合，然后再分别与地形成电容的两极，从而实现触控感应。由于功能介质层的介电常数足够大，因此，当外界物体触摸功能介质层时，其表面产生较大的摩擦力，从而实现更佳的触觉反馈效果。
附图说明
图1为本发明实施例提供的显示装置的结构示意图；
图2至图6为本发明实施例提供的传感器件的结构示意图；
图7为本发明实施例提供的触控组件的俯视图；
图8为本发明实施例提供的传感器件中触控组件的另一俯视图；
图9为本发明实施例提供的光控组件的电路图。
本发明的实施方式
为了使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明作进一步地详细描述，请参照附图中的图式，其中相同的组件符号代表相同的组件，以下的说明是基于所示的本发明具体实施例，其不应被视为限制本发明未在此详述的其他具体实施例。本说明书所使用的词语“实施例”意指实例、 示例或例证。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
请参考图1，本发明实施例提供一种显示装置，其中，显示装置20包括传感器件10以及显示面板200，其中，传感器件10集成在显示面板200内或设置在显示面板200上。显示装置20还包括光学胶层210，光学胶层210用于贴合显示面板200和传感器件10。其中，显示面板200包括液晶显示器、有机发光二极管显示面板、量子点发光二极管显示面板、Mini LED显示面板或Micro LED显示面板等。液晶显示器可以为阵列基板上彩色滤光片(Color Filter On Array，COA)或者Non-COA架构的液晶显示器，其显示模式包括扭曲向列(TwistedNematic，TN)、平面转换(In-PlaneSwitching，IPS)型、垂直配向(Vertical Alignment，VA)型以及边缘场开关(Fringe Field Switching，FFS)型。
请参考图2，传感器件10包括：基板101、光控组件102、触控组件103、栅极绝缘层104、钝化层105、功能介质层106以及遮光层107。触控组件103位于光控组件102的一侧。功能介质层106设置在远离基板101的一面且至少覆盖触控组件103，功能介质层106用于在外界物体与功能介质层106相接触 时向外界物体施加静电力，其中，静电力与触控组件103的电压值、外界物体与功能介质层106接触的面积以及功能介质层106的介电常数正相关。需要说明的是，外界物体指的是能与触控组件103产生电容的物体，包括手指、手掌等。
具体的，光控组件102包括开关薄膜晶体管102a和感光薄膜晶体管102b，开关薄膜晶体管102a和感光薄膜晶体管102b同层设置。其中，光控组件102用于感测投射至传感器件10上的外界光束。开关薄膜晶体管102a和感光薄膜晶体管102b设置于基板101靠近栅极绝缘层104的一面。开关薄膜晶体管102a包括第一栅极102a1、第一有源层102a2、第一源极102a3和第一漏极102a4。其中，第一栅极102a1设置在基板101靠近栅极绝缘层104的一面上。第一源极102a3和第一漏极102a4分别与第一有源层102a2电性连接。并且，第一有源层102a2与遮光层107对应设置。遮光层107在基板101上的正投影覆盖第一有源层102a2在基板101上的正投影。
感光薄膜晶体管102b包括第二栅极102b1、第二有源层102b2、第二源极102b3和第二漏极102b4。其中，第二栅极102b1和第一栅极102a1同层设置，第二栅极102b1和第一栅极102a1可以通过同一道掩模工艺形成。第二有源层102b2与第一有源层102a2同层设置。第二源极102b2、第二漏极102b3、第一源极102a3和第一漏极102a4同层设置。
在本实施例中，第一有源层102a2包括氢化非晶硅有源层、低温多晶硅有源层和氧化物有源层中的一种，第二有源层102b2包括氢化非晶硅有源层或低温多晶硅有源层。
传感器件10还包括依次层叠设置在基板上的栅极绝缘层和钝化层，栅极绝缘层104覆盖基板101、第一栅极102a1和第二栅极102b1。
钝化层105覆盖第一有源层102a2、第一源极102a3、第一漏极102a4、第二有源层102b2、第二源极102b3、第二漏极102b4。其中，钝化层105为无机钝化层，其包括氮化硅(SiN x)、氧化硅(SiO x)、氮氧化硅(SiN xO y)和三氧化二铝中的至少一种。
触控组件103设置在基板101上，触控组件103包括第一触控电极103a和第二触控电极103b，第一触控电极103a和第二触控电极103b同层或异层设 置。
具体的，请继续参考图2，第一触控电极103a和第二触控电极103b同层且间隔设置在钝化层105上，请结合图2和图7，图7为本发明实施例中触控组件的俯视图。任意两个相邻的第一触控电极103a电性连接，即第一触控电极103a直接连接。任意两个相邻的第二触控电极103b通过桥接部103b1相连，具体的，桥接部103b1的一部分设置于通孔内，并且桥接部103b1的另一部分设置在钝化层105靠近功能介质层106的一面。其中，桥接部103b1的材料包括氧化铟锡。
可选的，在一实施例中，第一触控电极103a和第二触控电极103b也可以是嵌入且绝缘设置，例如，第一触控电极103a的至少一部分嵌入至第二触控电极103b中。
本发明实施例中的传感器件10包括触控组件103以及光控组件102。其中，传感器件10的短程触控原理是利用触控组件103与人体之间产生的静电力的作用实现触觉反馈的效果。在本发明实施例中，利用功能介质层106作为传感器件10上方的绝缘膜层。当手指触摸传感器件10时，在其表面产生摩擦力，从而产生不同的触觉感受。为了达到更佳的触觉反馈效果，需要提升人体和触控组件104的摩擦力，摩擦力的公式如下：
Figure PCTCN2020141334-appb-000001
其中，在上述公式中，F为摩擦力、A为外界物体(包括手指)与传感器件10的接触面积、ε为功能介质层106的相对介电常数、ε0为真空介电常数、V为对第一触控电极103a和第二触控电极103b施加的电压、d为功能介质层106的厚度。
由公式(1)可知，增大触控组件103和人体的摩擦力F可以通过降低功能介质层106的厚度或采用具有高的相对介电常数的材料作为传感器件10上方的绝缘膜层实现。
因此，本发明实施例利用聚合物膜层作为功能介质层，实现具有较佳的触控反馈的传感器件。其中，功能介质层106的介电常数大于或等于2.5，例如，功能介质层106的介电常数为2.5、3、3.5、4、4.5、5或6中的任意一者。
功能介质层106的材料包括聚偏氟乙烯(PVDF)、聚苯硫醚(PPS)、乙烯 /乙烯醇共聚物(EVOH)、聚邻苯二甲酰胺(PPA)、聚酰胺-酰亚胺(PAI)、聚酰胺(PA)、聚醚酰亚胺(PEI)、聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸乙二醇酯(PET)中的至少一种。功能介质层106的厚度介于1微米至200微米之间。例如，功能介质层106的厚度可以是1微米、1微米、10微米、30微米、55微米、80微米、100微米、125微米、145微米、1160微米或185微米中的至少一者。
需要说明的是，本发明实施例中的功能介质层106可以设置于与触控组件103对应的位置，用于提高传感器件10的精度。或者，功能介质层106覆盖触控组件103和光控组件102。与光控组件102对应设置的功能介质层106用于防止开关薄膜晶体管102a和感光薄膜晶体管102b受到水氧的侵蚀。
请继续参考图2，遮光层107设置在开关薄膜晶体管102a上。并且，遮光层107在基板101上的正投影大于开关薄膜晶体管102a在基板101上的正投影。具体的，第一有源层102a2与遮光层107对应设置。遮光层107在基板101上的正投影覆盖第一有源层102a2在基板101上的正投影。遮光层107的材料包括金属、金属氧化物和高分子材料等。遮光层107用于遮挡外界光照射开关薄膜晶体管102a，防止第一有源层102a2受到外界光的侵害。
本实施例提供的传感器件10利用功能介质层106作为触控组件103上的绝缘层，当外界物体触摸功能介质层106时，触摸位置的第一触控电极103a和第二触控电极103b与外界物体的电容耦合，然后再分别与地形成电容的两极，从而实现触控感应。由于功能介质层106的介电常数足够大，因此，当外界物体触摸功能介质层106时，其表面产生较大的摩擦力，从而实现更佳的触觉反馈效果。另外，传感器件10上还同步集成了光控组件102，实现了短程触控，远程光控的功能，弥补了单一功能的触控或者光控的不足之处。
可选的，请参考图3，在一实施例中，传感器件10还包括平坦化层108，平坦化层108设置在钝化层105和功能介质层106之间。其中，平坦化层108的材料为有机材料，平坦化层108可以和功能介质层106同时作用，为传感器件10提供静电力。
可选的，请参考图4，在一实施例中，第一触控电极103a和第二触控电极103b同层且间隔设置在栅极绝缘层105上，并且，第一触控电极103a和第二 触控电极103b可以与第一栅极102a1、第二栅极102b1通过同一道掩模工艺形成。其中，任意两个相邻的第一触控电极103a电性连接，任意两个相邻第二触控电极103b通过桥接部103b1相连，桥接部103b1贯穿平坦化层108，且桥接部103b1的至少一部分设置在平坦化层108远离钝化层105的一面。
可选的，请参考图5，在另一实施例中，传感器件10可以不包括平坦化层108，即桥接部103b1的一部分设置于通孔内，并且桥接部103b1的另一部分设置在栅极绝缘层104靠近钝化层105的一面。
可选的，请参考图6，第一触控电极103a设置在栅极绝缘层104上，其中，第一触控电极103a与第一栅极102a1可以通过同一道掩模工艺形成。第二触控电极103b设置在钝化层105上。
本发明实施例中的传感器件集成了光控传感和触控传感的功能。其中，触控传感采用电容式触控模式，电容式触控是利用电极与人体手指间的静电耦合所产生电容的变化来实现的。具体的，电容式触控模式包括自电容和互电容。
以传感器件10的触控模式为自电容的模式为例，自电容模式的触控原理为：第一触控电极103a和第二触控电极103b与手指电容耦合后分别与地形成电容的两极，当手指触摸至传感器件10表面时，手指的电容会叠加至触控位置的传感器件上，使得电容增加。
相对于自电容模式的传感器件，互电容式具有更高的灵敏度和精准度。互电容式传感器件的工作原理为：第一触控电极103a和第二触控电极103b交叉的位置形成电容，即第一触控电极103a和第二触控电极103b分别构成了电容的两极，当手指触摸至传感器件10时，影响了触摸点附近两个电极之间的耦合，从而改变了第一触控电极103a和第二触控电极103b之间的电容量。
为了增加触控组件103的灵敏度和精准度，本发明实施例将第一触控电极103a和第二触控电极103b嵌合设置，以增大第一触控电极103a和第二触控电极103b之间的嵌合面积，从而提高传感器件10的灵敏度和精准度。具体的，请参考图8，本发明实施例将嵌合设置的一个第一触控电极103a和第二触控电极103b界定为一触控单元。在一触控单元中，第一触控电极103a包括第一主体部103aa及多个第一耦合部103ab，第一主体部103aa与第一耦合部103ab电性连接，且第一主体部103aa和第一耦合部103ab垂直设置。具体的，多个第 一耦合部103ab间隔设置于第一主体部103aa的两侧。第二触控电极103b包括第二主体部103ba及多个第二耦合部103bb，第二主体部103ba与第二耦合部103bb电性连接，且第二主体部103ba和第二耦合部103bb垂直设置。其中，第一耦合部103ab和第二耦合部103bb相互绝缘且嵌合设置。应该理解的是，本发明实施例中触控组件103包括多个触控单元，多个触控单元以阵列的形成排布。
本发明实施例主要是针对同步实现光控和触控的功能，采用On-glass的模式，首先利用a-Si作为光敏半导体材料，采用感光薄膜晶体管作为的光控传感器的结构和利用触觉集成组件作为触控传感器同步集成在显示面板之中，可实现短程触控，远程光控的功能，弥补单一功能的触控或者光控的不足之处。与电容触控相比，本发明实施例中的传感器件采用的是具有触觉反馈的触控传感器，其在某些特定的应用场景，比如游戏、车载显示等，为了提升触控的触觉反馈效果提升用户体验，增强游戏、视频和音乐的效果，直观无误地重建“机械”触感，可提供逼真的触觉反馈，可弥补在特定场景下音频与视觉反馈的低效问题。
如图9所示，本发明实施例采用2T1C，其中，TS为感光TFT，TD为开关TFT，C为电容。
本发明实施例采用光控传感和触控传感同步完成，且可同步集成在目前的显示面板之中，可实现短程触控，远程光控的功能，弥补单一功能的触控或者光控的不足之处。
本发明实施例中的传感器件10包括触控组件103和光控组件102。其中，传感器件10的短程触控原理是利用触控元件103与人体之间产生的静电力的作用实现触觉反馈的效果。在本发明实施例中，利用功能介质层106作为传感器件10上方的绝缘膜层。当手指触摸传感器件10时，在其表面产生摩擦力，从而产生不同的触觉感受。为了达到更加的触觉反馈效果，需要提升人体和触控组件103的摩擦力，摩擦力的公式如下：
Figure PCTCN2020141334-appb-000002
其中，在上述公式中，F为摩擦力、A为人体(包括手指)与传感器件10的接触面积、ε为功能介质层106的相对介电常数、ε0为真空介电常数、V为 对第一触控电极103a和第二触控电极103b施加的电压、d为功能介质层106的厚度。
由公式(1)可知，增大触控组件103和人体的摩擦力F可以通过降低功能介质层106的厚度或采用具有高的相对介电常数的材料作为传感器件10上方的绝缘膜层。本发明实施例利用聚合物膜层作为功能介质层，实现具有较佳的触控反馈的传感器件。
本发明实施例中远程光控的原理为：传感器件10受到光照刺激时，感光薄膜晶体管102b中的第二有源层102b2会产生载流子，而载流子通过存储电容的收集，然后通过开关薄膜晶体管102a的控制，经放大器处理及芯片(IC)检测，从而显示光控功能。
本发明实施例在传感器件中同步集成了光控组件作为光控传感器，触控组件作为触觉传感器，实现短程触控，远程光控的功能，弥补单一功能的触控或者光控的不足之处。
另外，本发明实施例利用功能介质层作为触控组件上的绝缘层，当外界物体触摸功能介质层时，触摸位置的第一触控电极和第二触控电极与外界物体的电容耦合，然后再分别与地形成电容的两极，从而实现触控感应。由于功能介质层的介电常数足够大，因此，当外界物体触摸功能介质层时，其表面产生较大的摩擦力，从而实现更佳的触觉反馈效果。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种传感器件，其中，包括：
    基板；
    光控组件，所述光控组件设置在所述基板上；
    触控组件，所述触控组件设置在所述基板上，并且，所述触控组件位于所述光控组件的一侧；
    功能介质层，所述功能介质层设置在远离所述基板的一面且至少覆盖所述触控组件，所述功能介质层用于在外界物体与所述功能介质层相接触时向所述外界物体施加静电力，其中，所述静电力与所述触控组件的电压值、所述外界物体与所述功能介质层接触的面积以及所述功能介质层的介电常数正相关。
  2. 根据权利要求1所述的传感器件，其中，所述功能介质层的介电常数大于或等于2.5。
  3. 根据权利要求1所述的传感器件，其中，所述功能介质层的厚度介于1微米至200微米之间。
  4. 根据权利要求1所述的传感器件，其中，所述功能介质层的材料包括聚偏氟乙烯、聚苯硫醚、乙烯/乙烯醇共聚物、聚邻苯二甲酰胺、聚酰胺-酰亚胺、聚酰胺、聚醚酰亚胺、聚甲基丙烯酸甲酯、聚对苯二甲酸乙二醇酯中的至少一种。
  5. 根据权利要求1所述的传感器件，其中，所述光控组件包括感光薄膜晶体管和开关薄膜晶体管，所述感光薄膜晶体管和所述开关薄膜晶体管同层设置；
    所述开关薄膜晶体管包括第一有源层、第一栅极、第一源极和第一漏极，其中，所述第一栅极设置在所述基板上，所述第一源极和所述第一漏极分别与所述第一有源层电性连接；
    所述感光薄膜晶体管包括第二栅极、第二有源层、第二源极和第二漏极，其中，所述第二栅极和所述第一栅极同层设置，所述第二有源层与所述第一有源层同层设置，所述第二源极、所述第二漏极、所述第一源极和所述第一漏极同层设置。
  6. 根据权利要求5所述的传感器件，其中，所述传感器件还包括：
    遮光层，所述遮光层设置在所述开关薄膜晶体管上，且所述遮光层在所述 基板上的正投影大于所述开关薄膜晶体管在所述基板上的正投影。
  7. 根据权利要求1所述的传感器件，其中，所述传感器件还包括依次层叠设置在所述基板上的栅极绝缘层和钝化层；
    所述触控组件包括第一触控电极和第二触控电极，所述第一触控电极和所述第二触控电极同层或异层设置。
  8. 根据权利要求7所述的传感器件，其中，所述第一触控电极和所述第二触控电极同层且间隔设置于所述钝化层上，任意两个相邻的所述第一触控电极电性连接，任意两个相邻的所述第二触控电极通过桥接部相连。
  9. 根据权利要求7所述的传感器件，其中，所述第一触控电极设置于所述栅极绝缘层上，所述第二触控电极设置于所述钝化层上。
  10. 根据权利要求7所述的传感器件，其中，所述第一触控电极和所述第二触控电极设置于所述栅极绝缘层上，其中，任意两个相邻的所述第二触控电极通过桥接部相连。
  11. 根据权利要求7所述的传感器件，其中，所述传感器件还包括：
    平坦化层，所述平坦化层设置在所述钝化层和所述功能介质层之间。
  12. 一种显示装置，其中，包括传感器件以及显示面板，所述传感器件集成在所述显示面板内或设置在所述显示面板上，所述传感器件包括：
    基板；
    光控组件，所述光控组件设置在所述基板上；
    触控组件，所述触控组件设置在所述基板上，并且，所述触控组件位于所述光控组件的一侧；
    功能介质层，所述功能介质层设置在远离所述基板的一面且至少覆盖所述触控组件，所述功能介质层用于在外界物体与所述功能介质层相接触时向所述外界物体施加静电力，其中，所述静电力与所述触控组件的电压值、所述外界物体与所述功能介质层接触的面积以及所述功能介质层的介电常数正相关。
  13. 根据权利要求12所述的显示装置，其中，所述功能介质层的介电常数大于或等于2.5。
  14. 根据权利要求12所述的显示装置，其中，所述功能介质层的厚度介于1微米至200微米之间。
  15. 根据权利要求12所述的显示装置，其中，所述功能介质层的材料包括聚偏氟乙烯、聚苯硫醚、乙烯/乙烯醇共聚物、聚邻苯二甲酰胺、聚酰胺-酰亚胺、聚酰胺、聚醚酰亚胺、聚甲基丙烯酸甲酯、聚对苯二甲酸乙二醇酯中的至少一种。
  16. 根据权利要求12所述的显示装置，其中，所述光控组件包括感光薄膜晶体管和开关薄膜晶体管，所述感光薄膜晶体管和所述开关薄膜晶体管同层设置；
    所述开关薄膜晶体管包括第一有源层、第一栅极、第一源极和第一漏极，其中，所述第一栅极设置在所述基板上，所述第一源极和所述第一漏极分别与所述第一有源层电性连接；
    所述感光薄膜晶体管包括第二栅极、第二有源层、第二源极和第二漏极，其中，所述第二栅极和所述第一栅极同层设置，所述第二有源层与所述第一有源层同层设置，所述第二源极、所述第二漏极、所述第一源极和所述第一漏极同层设置。
  17. 根据权利要求16所述的显示装置，其中，所述传感器件还包括：
    遮光层，所述遮光层设置在所述开关薄膜晶体管上，且所述遮光层在所述基板上的正投影大于所述开关薄膜晶体管在所述基板上的正投影。
  18. 根据权利要求12所述的显示装置，其中，所述传感器件还包括依次层叠设置在所述基板上的栅极绝缘层和钝化层；
    所述触控组件包括第一触控电极和第二触控电极，所述第一触控电极和所述第二触控电极同层或异层设置。
  19. 根据权利要求18所述的显示装置，其中，所述第一触控电极和所述第二触控电极同层且间隔设置于所述钝化层上，任意两个相邻的所述第一触控电极电性连接，任意两个相邻的所述第二触控电极通过桥接部相连。
  20. 根据权利要求18所述的显示装置，其中，所述第一触控电极设置于所述栅极绝缘层上，所述第二触控电极设置于所述钝化层上。
PCT/CN2020/141334 2020-12-29 2020-12-30 传感器件及显示装置 WO2022141177A1 (zh)

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